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WO2009022592A1 - ソフトリカバリーダイオード - Google Patents

ソフトリカバリーダイオード Download PDF

Info

Publication number
WO2009022592A1
WO2009022592A1 PCT/JP2008/064097 JP2008064097W WO2009022592A1 WO 2009022592 A1 WO2009022592 A1 WO 2009022592A1 JP 2008064097 W JP2008064097 W JP 2008064097W WO 2009022592 A1 WO2009022592 A1 WO 2009022592A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
base layer
type base
recovery diode
soft recovery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064097
Other languages
English (en)
French (fr)
Inventor
Yoichi Miyanagi
Yoshitaka Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Electric Power Co Inc
Original Assignee
Kansai Electric Power Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Electric Power Co Inc filed Critical Kansai Electric Power Co Inc
Publication of WO2009022592A1 publication Critical patent/WO2009022592A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

　ｎ+型半導体基板２と、上記ｎ+型半導体基板２上に形成されたｎ--型ベース層３と、上記ｎ--型ベース層３上に形成されたｎ-型ベース層４と、上記ｎ-型ベース層４上に形成されたｐ+型アノード層５とを備える。上記ｎ--型ベース層３は、ｎ-型ベース層４よりも低濃度のｎ型不純物を有する。上記ｐ+型アノード層５とｎ-型ベース層４でｐｎ接合を形成する。上記ｐ+型アノード層５上にアノード電極６を形成し、ｎ+型半導体基板２の下側にカソード電極７を形成する。
PCT/JP2008/064097 2007-08-13 2008-08-06 ソフトリカバリーダイオード Ceased WO2009022592A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-210926 2007-08-13
JP2007210926A JP2009049045A (ja) 2007-08-13 2007-08-13 ソフトリカバリーダイオード

Publications (1)

Publication Number Publication Date
WO2009022592A1 true WO2009022592A1 (ja) 2009-02-19

Family

ID=40350645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064097 Ceased WO2009022592A1 (ja) 2007-08-13 2008-08-06 ソフトリカバリーダイオード

Country Status (2)

Country Link
JP (1) JP2009049045A (ja)
WO (1) WO2009022592A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112637A (ja) * 2012-11-06 2014-06-19 Toshiba Corp 半導体装置
CN116799039A (zh) * 2023-06-30 2023-09-22 海信家电集团股份有限公司 快恢复二极管

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087812B2 (en) * 2011-07-15 2015-07-21 International Rectifier Corporation Composite semiconductor device with integrated diode
JP6271309B2 (ja) 2014-03-19 2018-01-31 株式会社東芝 半導体基板の製造方法、半導体基板および半導体装置
JP6271356B2 (ja) 2014-07-07 2018-01-31 株式会社東芝 半導体装置の製造方法
JP6415946B2 (ja) 2014-11-26 2018-10-31 株式会社東芝 半導体装置の製造方法及び半導体装置
JP7493128B2 (ja) * 2021-08-19 2024-05-31 Ｊｆｅスチール株式会社 操業条件提示方法および操業条件提示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273354A (ja) * 1994-03-31 1995-10-20 Shindengen Electric Mfg Co Ltd ダイオ−ド
JPH08316499A (ja) * 1995-05-23 1996-11-29 Toyo Electric Mfg Co Ltd 高速ダイオード
JPH1126779A (ja) * 1997-04-04 1999-01-29 Siemens Ag パワーダイオード
JP2000323488A (ja) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd ダイオードおよびその製造方法
WO2002001643A2 (en) * 2000-06-26 2002-01-03 Fairchild Semiconductor Corporation Soft recovery power diode and related method
JP2003124478A (ja) * 2001-10-09 2003-04-25 Matsushita Electric Ind Co Ltd 半導体装置
JP2006303469A (ja) * 2005-03-25 2006-11-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273354A (ja) * 1994-03-31 1995-10-20 Shindengen Electric Mfg Co Ltd ダイオ−ド
JPH08316499A (ja) * 1995-05-23 1996-11-29 Toyo Electric Mfg Co Ltd 高速ダイオード
JPH1126779A (ja) * 1997-04-04 1999-01-29 Siemens Ag パワーダイオード
JP2000323488A (ja) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd ダイオードおよびその製造方法
WO2002001643A2 (en) * 2000-06-26 2002-01-03 Fairchild Semiconductor Corporation Soft recovery power diode and related method
JP2003124478A (ja) * 2001-10-09 2003-04-25 Matsushita Electric Ind Co Ltd 半導体装置
JP2006303469A (ja) * 2005-03-25 2006-11-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112637A (ja) * 2012-11-06 2014-06-19 Toshiba Corp 半導体装置
CN116799039A (zh) * 2023-06-30 2023-09-22 海信家电集团股份有限公司 快恢复二极管
CN116799039B (zh) * 2023-06-30 2024-03-08 海信家电集团股份有限公司 快恢复二极管

Also Published As

Publication number Publication date
JP2009049045A (ja) 2009-03-05

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