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WO2009054115A1 - ＳＯＩ（Silicon on insulator）構造の半導体装置およびその製造方法 - Google Patents

ＳＯＩ（Silicon on insulator）構造の半導体装置およびその製造方法 Download PDF

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Publication number
WO2009054115A1
WO2009054115A1 PCT/JP2008/002964 JP2008002964W WO2009054115A1 WO 2009054115 A1 WO2009054115 A1 WO 2009054115A1 JP 2008002964 W JP2008002964 W JP 2008002964W WO 2009054115 A1 WO2009054115 A1 WO 2009054115A1
Authority
WO
WIPO (PCT)
Prior art keywords
soi
semiconductor device
lattice distortion
silicon
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002964
Other languages
English (en)
French (fr)
Inventor
Hiroshi Ohtsuki
Mitsutaka Katada
Nobuhiko Noto
Hiroshi Takeno
Kazuhiko Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Shin Etsu Handotai Co Ltd
Original Assignee
Denso Corp
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Shin Etsu Handotai Co Ltd filed Critical Denso Corp
Priority to CN2008801125346A priority Critical patent/CN101836281B/zh
Priority to US12/734,240 priority patent/US8410573B2/en
Priority to EP08841352A priority patent/EP2207194A4/en
Publication of WO2009054115A1 publication Critical patent/WO2009054115A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10P30/204—
    • H10P30/208—
    • H10P36/03—
    • H10P36/07—
    • H10P90/1906—
    • H10P90/1922—
    • H10P95/405—
    • H10W10/014—
    • H10W10/061—
    • H10W10/17—
    • H10W10/181—

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

　ＳＯＩ基板１００を用いたＳＯＩ構造の半導体装置において、活性層３となるシリコン基板に対してＡｒイオンを注入することにより格子歪み層４を形成する。これにより、格子歪み層４をゲッタリングサイトとして機能させることが可能となる。また、Ａｒイオンのドーズ量を調整し、格子歪み層４の引張り応力が１１ＭＰａ以上かつ２７ＭＰａ以下となるようにする。これにより、ゲッタリングサイトとして機能させつつ、リーク電流の発生を抑制することが可能となる。
PCT/JP2008/002964 2007-10-22 2008-10-20 ＳＯＩ（Silicon on insulator）構造の半導体装置およびその製造方法 Ceased WO2009054115A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801125346A CN101836281B (zh) 2007-10-22 2008-10-20 Soi(绝缘体上硅)结构的半导体装置及其制造方法
US12/734,240 US8410573B2 (en) 2007-10-22 2008-10-20 SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same
EP08841352A EP2207194A4 (en) 2007-10-22 2008-10-20 SEMICONDUCTOR ASSEMBLY WITH SOI STRUCTURE (SILICON ON ISOLATOR) AND METHOD OF MANUFACTURING THEREOF

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-273813 2007-10-22
JP2007273813 2007-10-22
JP2008261781A JP5499455B2 (ja) 2007-10-22 2008-10-08 ＳＯＩ（Ｓｉｌｉｃｏｎｏｎｉｎｓｕｌａｔｏｒ）構造の半導体装置およびその製造方法
JP2008-261781 2008-10-08

Publications (1)

Publication Number Publication Date
WO2009054115A1 true WO2009054115A1 (ja) 2009-04-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002964 Ceased WO2009054115A1 (ja) 2007-10-22 2008-10-20 ＳＯＩ（Silicon on insulator）構造の半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US8410573B2 (ja)
EP (2) EP2800138A1 (ja)
JP (1) JP5499455B2 (ja)
CN (2) CN101836281B (ja)
WO (1) WO2009054115A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130134518A1 (en) * 2011-11-28 2013-05-30 International Business Machines Corporation Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
CN103943547A (zh) * 2013-01-23 2014-07-23 中国科学院上海微系统与信息技术研究所 基于增强吸附来制备绝缘体上材料的方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258083A (ja) * 2009-04-22 2010-11-11 Panasonic Corp Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法
US8664746B2 (en) * 2011-09-20 2014-03-04 Stmicroelectronics Pte. Ltd. Gettering method for dielectrically isolated devices
JP6098327B2 (ja) * 2013-04-18 2017-03-22 株式会社デンソー 半導体装置
US10431684B2 (en) * 2016-04-22 2019-10-01 Texas Instruments Incorporated Method for improving transistor performance
EP3685443A4 (en) * 2017-09-18 2021-04-21 INTEL Corporation STRESS THIN LAYER TRANSISTORS
EP4415027A1 (en) * 2023-02-09 2024-08-14 Infineon Technologies AG Semiconductor device and methods for fabricating a semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260428A (ja) 1989-03-31 1990-10-23 Hitachi Ltd 半導体基板及び半導体装置
JPH0818054A (ja) * 1994-04-28 1996-01-19 Nippondenso Co Ltd 半導体装置及びその製造方法
JPH0878644A (ja) * 1994-09-02 1996-03-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP2908150B2 (ja) 1992-11-27 1999-06-21 日本電気株式会社 Ｓｏｉ基板構造及びその製造方法
JP2000315736A (ja) * 1999-03-04 2000-11-14 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2000332021A (ja) 1999-05-18 2000-11-30 Hitachi Ltd Ｓｏｉ基板およびその製造方法ならびに半導体装置およびその製造方法
JP3484961B2 (ja) 1997-12-26 2004-01-06 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法

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JP3542189B2 (ja) * 1995-03-08 2004-07-14 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP3612144B2 (ja) * 1996-06-04 2005-01-19 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH1032209A (ja) * 1996-07-17 1998-02-03 Hitachi Ltd Ｓｏｉウエハおよびその製造方法ならびにそのｓｏｉウエハを用いた半導体集積回路装置
JPH1117000A (ja) * 1997-06-27 1999-01-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH1167778A (ja) * 1997-08-19 1999-03-09 Sumitomo Metal Ind Ltd Ｓｏｉ半導体ウエーハの製造方法
US6255195B1 (en) * 1999-02-22 2001-07-03 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4115283B2 (ja) * 2003-01-07 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
DE102004021113B4 (de) * 2004-04-29 2006-04-20 Siltronic Ag SOI-Scheibe und Verfahren zu ihrer Herstellung
JP2006073572A (ja) * 2004-08-31 2006-03-16 Oki Electric Ind Co Ltd 半導体結晶欠陥検査方法、半導体結晶欠陥検査装置、及びその半導体結晶欠陥検査装置を用いた半導体装置の製造方法
JP2006134925A (ja) 2004-11-02 2006-05-25 Nec Electronics Corp Ｓｏｉ基板及びその製造方法
KR100632463B1 (ko) * 2005-02-07 2006-10-11 삼성전자주식회사 에피택셜 반도체 기판의 제조 방법과 이를 이용한 이미지센서의 제조 방법, 에피택셜 반도체 기판 및 이를 이용한이미지 센서
JP2007095951A (ja) 2005-09-28 2007-04-12 Denso Corp 半導体基板およびその製造方法
JP2007157935A (ja) 2005-12-02 2007-06-21 Denso Corp 半導体装置およびその製造方法
EP2012347B1 (en) * 2006-04-24 2015-03-18 Shin-Etsu Handotai Co., Ltd. Method for producing soi wafer
JP5532527B2 (ja) 2006-08-03 2014-06-25 株式会社デンソー Ｓｏｉ基板およびその製造方法
JP5248838B2 (ja) * 2007-10-25 2013-07-31 信越化学工業株式会社 半導体基板の製造方法
JP2010245165A (ja) * 2009-04-02 2010-10-28 Mitsubishi Electric Corp 電力用半導体装置の製造方法および電力用半導体装置の製造装置
JP6083404B2 (ja) * 2014-03-17 2017-02-22 信越半導体株式会社 半導体基板の評価方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260428A (ja) 1989-03-31 1990-10-23 Hitachi Ltd 半導体基板及び半導体装置
JP2908150B2 (ja) 1992-11-27 1999-06-21 日本電気株式会社 Ｓｏｉ基板構造及びその製造方法
JPH0818054A (ja) * 1994-04-28 1996-01-19 Nippondenso Co Ltd 半導体装置及びその製造方法
JPH0878644A (ja) * 1994-09-02 1996-03-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP3484961B2 (ja) 1997-12-26 2004-01-06 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
JP2000315736A (ja) * 1999-03-04 2000-11-14 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2000332021A (ja) 1999-05-18 2000-11-30 Hitachi Ltd Ｓｏｉ基板およびその製造方法ならびに半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2207194A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130134518A1 (en) * 2011-11-28 2013-05-30 International Business Machines Corporation Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
US8748285B2 (en) * 2011-11-28 2014-06-10 International Business Machines Corporation Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
CN103943547A (zh) * 2013-01-23 2014-07-23 中国科学院上海微系统与信息技术研究所 基于增强吸附来制备绝缘体上材料的方法
WO2014114029A1 (zh) * 2013-01-23 2014-07-31 中国科学院上海微系统与信息技术研究所 基于增强吸附来制备绝缘体上材料的方法

Also Published As

Publication number Publication date
US8410573B2 (en) 2013-04-02
EP2207194A4 (en) 2013-01-23
US20100264510A1 (en) 2010-10-21
JP2009124116A (ja) 2009-06-04
CN101836281B (zh) 2012-05-30
EP2800138A1 (en) 2014-11-05
CN102637699B (zh) 2016-01-06
EP2207194A1 (en) 2010-07-14
JP5499455B2 (ja) 2014-05-21
CN102637699A (zh) 2012-08-15
CN101836281A (zh) 2010-09-15

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