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WO2008156070A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2008156070A1
WO2008156070A1 PCT/JP2008/061019 JP2008061019W WO2008156070A1 WO 2008156070 A1 WO2008156070 A1 WO 2008156070A1 JP 2008061019 W JP2008061019 W JP 2008061019W WO 2008156070 A1 WO2008156070 A1 WO 2008156070A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
turned
channel
case
depletion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061019
Other languages
English (en)
French (fr)
Inventor
Masaru Takaishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007160242A external-priority patent/JP2008311573A/ja
Priority claimed from JP2007160245A external-priority patent/JP5230970B2/ja
Priority claimed from JP2007160235A external-priority patent/JP2008311572A/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/665,538 priority Critical patent/US8766317B2/en
Publication of WO2008156070A1 publication Critical patent/WO2008156070A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　オン抵抗を大幅に低減することが可能な新しい動作原理に基づく半導体装置を提供する。この半導体装置（１）は、埋め込み電極（５）が負電位である場合に、トレンチ（３ａ）から隣接するトレンチにわたって空乏層（１１）が形成されることにより、チャネル（１０）がオフ状態となり、埋め込み電極が正電位である場合に、隣接するトレンチ間の全ての領域において、空乏層が形成されないことにより、チャネルがオン状態となる。
PCT/JP2008/061019 2007-06-18 2008-06-17 半導体装置 Ceased WO2008156070A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/665,538 US8766317B2 (en) 2007-06-18 2008-06-17 Semiconductor device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-160235 2007-06-18
JP2007160242A JP2008311573A (ja) 2007-06-18 2007-06-18 半導体装置
JP2007160245A JP5230970B2 (ja) 2007-06-18 2007-06-18 半導体装置
JP2007-160242 2007-06-18
JP2007160235A JP2008311572A (ja) 2007-06-18 2007-06-18 半導体装置
JP2007-160245 2007-06-18

Publications (1)

Publication Number Publication Date
WO2008156070A1 true WO2008156070A1 (ja) 2008-12-24

Family

ID=40156229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061019 Ceased WO2008156070A1 (ja) 2007-06-18 2008-06-17 半導体装置

Country Status (2)

Country Link
US (1) US8766317B2 (ja)
WO (1) WO2008156070A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150221781A1 (en) * 2009-06-04 2015-08-06 Mitsubishi Electric Corporation Semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8217419B2 (en) * 2007-06-15 2012-07-10 Rohm Co., Ltd. Semiconductor device
US8816419B2 (en) * 2007-06-19 2014-08-26 Rohm Co., Ltd. Semiconductor device
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
JP2015056492A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
US9716151B2 (en) * 2013-09-24 2017-07-25 Semiconductor Components Industries, Llc Schottky device having conductive trenches and a multi-concentration doping profile therebetween
JP6441192B2 (ja) 2015-09-11 2018-12-19 株式会社東芝 半導体装置
US10608122B2 (en) 2018-03-13 2020-03-31 Semicondutor Components Industries, Llc Schottky device and method of manufacture

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289176A (ja) * 1990-04-06 1991-12-19 Nissan Motor Co Ltd 半導体装置
JPH0548117A (ja) * 1991-08-19 1993-02-26 Nissan Motor Co Ltd 静電誘導半導体装置
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
JPH06326319A (ja) * 1993-03-18 1994-11-25 Hitachi Ltd 電圧駆動型半導体装置
JP2003533889A (ja) * 2000-05-13 2003-11-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ トレンチゲート半導体装置

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JPS5341985A (en) 1976-09-28 1978-04-15 Nippon Gakki Seizo Kk Vertical type field effect transistor and its production
JPS55108768A (en) 1979-02-13 1980-08-21 Semiconductor Res Found Electrostatic induction thyristor
JPS57172765A (en) 1981-04-17 1982-10-23 Semiconductor Res Found Electrostatic induction thyristor
EP0339962A3 (en) 1988-04-27 1990-09-26 General Electric Company Field effect semiconductor device
US5132238A (en) * 1989-12-28 1992-07-21 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device utilizing an accumulation layer
JP2893835B2 (ja) 1990-04-06 1999-05-24 日産自動車株式会社 半導体装置の製造方法
US5324966A (en) * 1992-04-07 1994-06-28 Toyo Denki Seizo Kabushiki Kaisha MOS-controlled thyristor
JP3189576B2 (ja) 1994-06-09 2001-07-16 日産自動車株式会社 半導体装置
JP3319228B2 (ja) 1994-12-09 2002-08-26 富士電機株式会社 たて型半導体素子およびその製造方法
US6693310B1 (en) * 1995-07-19 2004-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5679966A (en) * 1995-10-05 1997-10-21 North Carolina State University Depleted base transistor with high forward voltage blocking capability
JP3389781B2 (ja) 1996-05-31 2003-03-24 日産自動車株式会社 半導体装置
JP3575331B2 (ja) 1999-05-17 2004-10-13 日産自動車株式会社 電界効果トランジスタ
JP2001007149A (ja) 1999-06-24 2001-01-12 Nec Corp 高出力半導体装置
EP1835542A3 (en) * 1999-09-30 2007-10-03 Kabushiki Kaisha Toshiba Semiconductor device with trench gate
JP2001168333A (ja) 1999-09-30 2001-06-22 Toshiba Corp トレンチゲート付き半導体装置
JP3289141B2 (ja) 1999-11-26 2002-06-04 京セラ株式会社 定着装置のウォームアップ方法
JP3991803B2 (ja) 2002-07-23 2007-10-17 日産自動車株式会社 半導体装置
US6878994B2 (en) * 2002-08-22 2005-04-12 International Rectifier Corporation MOSgated device with accumulated channel region and Schottky contact
JP4393053B2 (ja) 2002-10-25 2010-01-06 株式会社豊田中央研究所 バイポーラ型半導体装置とその製造方法
US7368777B2 (en) * 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
JP4575713B2 (ja) * 2004-05-31 2010-11-04 三菱電機株式会社 絶縁ゲート型半導体装置
JP2007189192A (ja) * 2005-12-15 2007-07-26 Toshiba Corp 半導体装置
US8217419B2 (en) * 2007-06-15 2012-07-10 Rohm Co., Ltd. Semiconductor device
US8816419B2 (en) * 2007-06-19 2014-08-26 Rohm Co., Ltd. Semiconductor device
US8049877B2 (en) 2008-05-14 2011-11-01 Kla-Tencor Corp. Computer-implemented methods, carrier media, and systems for selecting polarization settings for an inspection system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289176A (ja) * 1990-04-06 1991-12-19 Nissan Motor Co Ltd 半導体装置
JPH0548117A (ja) * 1991-08-19 1993-02-26 Nissan Motor Co Ltd 静電誘導半導体装置
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
JPH06326319A (ja) * 1993-03-18 1994-11-25 Hitachi Ltd 電圧駆動型半導体装置
JP2003533889A (ja) * 2000-05-13 2003-11-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ トレンチゲート半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150221781A1 (en) * 2009-06-04 2015-08-06 Mitsubishi Electric Corporation Semiconductor device
US9786796B2 (en) * 2009-06-04 2017-10-10 Mitsubishi Electric Corporation Semiconductor device having first and second layers with opposite conductivity types
US10749043B2 (en) 2009-06-04 2020-08-18 Mitsubishi Electric Corporation Semiconductor device including a trench structure

Also Published As

Publication number Publication date
US8766317B2 (en) 2014-07-01
US20100193837A1 (en) 2010-08-05

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