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WO2008155896A1 - 電子装置の製造方法 - Google Patents

電子装置の製造方法 Download PDF

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Publication number
WO2008155896A1
WO2008155896A1 PCT/JP2008/001545 JP2008001545W WO2008155896A1 WO 2008155896 A1 WO2008155896 A1 WO 2008155896A1 JP 2008001545 W JP2008001545 W JP 2008001545W WO 2008155896 A1 WO2008155896 A1 WO 2008155896A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
substrate
mark
electronic component
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/001545
Other languages
English (en)
French (fr)
Inventor
Rie Takayama
Toyosei Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2009520309A priority Critical patent/JP5338663B2/ja
Priority to US12/665,175 priority patent/US20100183983A1/en
Publication of WO2008155896A1 publication Critical patent/WO2008155896A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10W46/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H10W46/301—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

マークが形成された基板（透明基板１３）あるいはマークが形成された電子部品（受光部１１とこの受光部１１が設けられたベース基板１２）上に、マークを覆うように、フィラーと光硬化性樹脂とを含有する樹脂組成物を設ける工程と、露光装置のマスクと樹脂組成物が設けられた基板あるいは電子部品との位置あわせを行う工程と、樹脂組成物に対し、マスクを介して光を選択的に照射し、現像して所定の領域に樹脂組成物を残す工程と、基板および電子部品を対向配置させて、樹脂組成物を介して接着する工程とを含む。露光装置のマスクと、樹脂組成物が設けられた基板あるいは電子部品との位置あわせを行う前記工程では、マークを、樹脂組成物中のフィラーの平均粒径の１．５倍以上の波長の光を用いて検出する。
PCT/JP2008/001545 2007-06-19 2008-06-16 電子装置の製造方法 Ceased WO2008155896A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009520309A JP5338663B2 (ja) 2007-06-19 2008-06-16 電子装置の製造方法
US12/665,175 US20100183983A1 (en) 2007-06-19 2008-06-16 Process for manufacturing electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-161475 2007-06-19
JP2007161475 2007-06-19

Publications (1)

Publication Number Publication Date
WO2008155896A1 true WO2008155896A1 (ja) 2008-12-24

Family

ID=40156060

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001545 Ceased WO2008155896A1 (ja) 2007-06-19 2008-06-16 電子装置の製造方法

Country Status (5)

Country Link
US (1) US20100183983A1 (ja)
JP (1) JP5338663B2 (ja)
KR (1) KR20100032896A (ja)
TW (1) TWI407861B (ja)
WO (1) WO2008155896A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010095593A1 (ja) * 2009-02-23 2010-08-26 住友ベークライト株式会社 半導体ウエハー接合体、半導体ウエハー接合体の製造方法および半導体装置
WO2010095592A1 (ja) * 2009-02-23 2010-08-26 住友ベークライト株式会社 半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
WO2010103903A1 (ja) * 2009-03-12 2010-09-16 住友ベークライト株式会社 スペーサ形成用フィルム、半導体ウエハーおよび半導体装置
WO2011030797A1 (ja) * 2009-09-09 2011-03-17 住友ベークライト株式会社 半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
WO2011034025A1 (ja) * 2009-09-16 2011-03-24 住友ベークライト株式会社 スペーサ形成用フィルム、半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
WO2011046181A1 (ja) * 2009-10-15 2011-04-21 住友ベークライト株式会社 樹脂組成物、半導体ウエハー接合体および半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10470290B2 (en) * 2017-05-08 2019-11-05 International Business Machines Corporation Coating for limiting substrate damage due to discrete failure
CN113049455B (zh) * 2019-12-26 2023-04-14 中核北方核燃料元件有限公司 一种包覆燃料颗粒及核芯溯源性直径辅助测量装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163342A (ja) * 2001-11-29 2003-06-06 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
WO2006040986A1 (ja) * 2004-10-13 2006-04-20 Sumitomo Bakelite Co., Ltd. 受光装置
JP2007073958A (ja) * 2005-09-02 2007-03-22 Korea Advanced Inst Of Sci Technol イメージセンサモジュール用ウエハーレベルチップサイズのパッケージ及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320922A (ja) * 1996-05-24 1997-12-12 Nikon Corp 露光装置
CN1914699B (zh) * 2004-07-23 2011-07-13 株式会社村田制作所 电子元件的制造方法、母板和电子元件
JP5147095B2 (ja) * 2005-09-20 2013-02-20 宇部日東化成株式会社 シリカ系フィラーおよびそれを含む透明樹脂組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163342A (ja) * 2001-11-29 2003-06-06 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
WO2006040986A1 (ja) * 2004-10-13 2006-04-20 Sumitomo Bakelite Co., Ltd. 受光装置
JP2007073958A (ja) * 2005-09-02 2007-03-22 Korea Advanced Inst Of Sci Technol イメージセンサモジュール用ウエハーレベルチップサイズのパッケージ及びその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010095593A1 (ja) * 2009-02-23 2010-08-26 住友ベークライト株式会社 半導体ウエハー接合体、半導体ウエハー接合体の製造方法および半導体装置
WO2010095592A1 (ja) * 2009-02-23 2010-08-26 住友ベークライト株式会社 半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
CN102326249A (zh) * 2009-02-23 2012-01-18 住友电木株式会社 半导体晶片接合体、半导体晶片接合体的制造方法和半导体装置
EP2400541A4 (en) * 2009-02-23 2013-03-27 Sumitomo Bakelite Co SEMICONDUCTOR WAFER ARRANGEMENT, METHOD FOR PRODUCING A SEMICONDUCTOR WAFER ARRANGEMENT AND SEMICONDUCTOR COMPONENT
WO2010103903A1 (ja) * 2009-03-12 2010-09-16 住友ベークライト株式会社 スペーサ形成用フィルム、半導体ウエハーおよび半導体装置
CN102341908A (zh) * 2009-03-12 2012-02-01 住友电木株式会社 间隔体形成用膜、半导体晶片和半导体装置
WO2011030797A1 (ja) * 2009-09-09 2011-03-17 住友ベークライト株式会社 半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
CN102696102A (zh) * 2009-09-09 2012-09-26 住友电木株式会社 半导体晶片接合体的制造方法、半导体晶片接合体和半导体装置
WO2011034025A1 (ja) * 2009-09-16 2011-03-24 住友ベークライト株式会社 スペーサ形成用フィルム、半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
CN102625952A (zh) * 2009-09-16 2012-08-01 住友电木株式会社 隔片形成用膜、半导体晶片接合体的制造方法、半导体晶片接合体和半导体装置
WO2011046181A1 (ja) * 2009-10-15 2011-04-21 住友ベークライト株式会社 樹脂組成物、半導体ウエハー接合体および半導体装置
CN102576712A (zh) * 2009-10-15 2012-07-11 住友电木株式会社 树脂组合物、半导体晶片接合体和半导体装置

Also Published As

Publication number Publication date
JP5338663B2 (ja) 2013-11-13
KR20100032896A (ko) 2010-03-26
JPWO2008155896A1 (ja) 2010-08-26
US20100183983A1 (en) 2010-07-22
TW200908841A (en) 2009-02-16
TWI407861B (zh) 2013-09-01

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