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WO2008149605A1 - 抵抗変化素子およびこれを備えた半導体装置 - Google Patents

抵抗変化素子およびこれを備えた半導体装置 Download PDF

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Publication number
WO2008149605A1
WO2008149605A1 PCT/JP2008/057393 JP2008057393W WO2008149605A1 WO 2008149605 A1 WO2008149605 A1 WO 2008149605A1 JP 2008057393 W JP2008057393 W JP 2008057393W WO 2008149605 A1 WO2008149605 A1 WO 2008149605A1
Authority
WO
WIPO (PCT)
Prior art keywords
variable resistance
same
resistance element
semiconductor device
transition metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057393
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English (en)
French (fr)
Inventor
Kensuke Takahashi
Takashi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to US12/602,933 priority Critical patent/US20100176363A1/en
Priority to JP2009517744A priority patent/JPWO2008149605A1/ja
Publication of WO2008149605A1 publication Critical patent/WO2008149605A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

　第１の電極と、第１の電極上に形成された抵抗変化材料層と、この抵抗変化材料層上に形成された第２の電極を有し、前記抵抗変化材料層は、遷移金属Ｍ１の酸化物である遷移金属酸化物が非遷移金属元素Ｍ２の酸化物を含み非結晶化された材料からなる抵抗変化素子。
PCT/JP2008/057393 2007-06-04 2008-04-16 抵抗変化素子およびこれを備えた半導体装置 Ceased WO2008149605A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/602,933 US20100176363A1 (en) 2007-06-04 2008-04-16 Variable resistance element and semiconductor device provided with the same
JP2009517744A JPWO2008149605A1 (ja) 2007-06-04 2008-04-16 抵抗変化素子およびこれを備えた半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007147927 2007-06-04
JP2007-147927 2007-06-04

Publications (1)

Publication Number Publication Date
WO2008149605A1 true WO2008149605A1 (ja) 2008-12-11

Family

ID=40093433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057393 Ceased WO2008149605A1 (ja) 2007-06-04 2008-04-16 抵抗変化素子およびこれを備えた半導体装置

Country Status (3)

Country Link
US (1) US20100176363A1 (ja)
JP (1) JPWO2008149605A1 (ja)
WO (1) WO2008149605A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177181A (ja) * 2008-01-23 2009-08-06 Samsung Electronics Co Ltd 抵抗性メモリ素子及びその製造方法
WO2009101785A1 (ja) * 2008-02-12 2009-08-20 Panasonic Corporation 不揮発性半導体記憶装置及びその製造方法
WO2010079816A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 半導体装置及びその製造方法
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
WO2011024271A1 (ja) * 2009-08-26 2011-03-03 株式会社 東芝 不揮発性記憶素子及び不揮発性記憶装置
JP2011066285A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性記憶素子および不揮発性記憶装置
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
KR101113014B1 (ko) * 2010-06-15 2012-02-27 서울대학교산학협력단 스페이서 구조를 갖는 저항성 메모리 소자 및 그 제조방법
JP2013239728A (ja) * 2009-06-25 2013-11-28 Nec Corp 半導体装置及びその製造方法
JP2015111712A (ja) * 2009-11-11 2015-06-18 日本電気株式会社 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法
JP2015185782A (ja) * 2014-03-26 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置
US9570682B2 (en) 2009-08-28 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor memory device and method of manufacturing the same
KR20230131150A (ko) * 2022-03-04 2023-09-12 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 초박막 장벽층을 갖는 저항성 메모리 디바이스 및 그 형성 방법

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JP5725168B2 (ja) * 2011-04-20 2015-05-27 富士通オプティカルコンポーネンツ株式会社 検出装置、光受信装置、検出方法および光受信方法
US9112148B2 (en) * 2013-09-30 2015-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with laterally offset BEVA/TEVA
US11075339B2 (en) 2018-10-17 2021-07-27 Cerfe Labs, Inc. Correlated electron material (CEM) devices with contact region sidewall insulation
US11437573B2 (en) * 2018-03-29 2022-09-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US11476416B2 (en) 2018-03-29 2022-10-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US20200259083A1 (en) * 2019-02-08 2020-08-13 Arm Limited Method for fabrication of a cem device

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JP2005229015A (ja) * 2004-02-16 2005-08-25 Sony Corp 記憶装置
JP2006245322A (ja) * 2005-03-03 2006-09-14 Sony Corp 記憶素子及びメモリ
JP2007053125A (ja) * 2005-08-15 2007-03-01 National Institute Of Advanced Industrial & Technology スイッチング素子

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US6972430B2 (en) * 2002-02-20 2005-12-06 Stmicroelectronics S.R.L. Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
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JP2005229015A (ja) * 2004-02-16 2005-08-25 Sony Corp 記憶装置
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JP2007053125A (ja) * 2005-08-15 2007-03-01 National Institute Of Advanced Industrial & Technology スイッチング素子

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D.C.KIM ET AL.: "Improvement of resistive memory switching in NiO using Ir02", APPLIED PHYSICS LETTERS, vol. 88, 6 June 2006 (2006-06-06), pages 1 - 3 *
J.W.PARK ET AL.: "Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, vol. 23, no. 5, October 2005 (2005-10-01), pages 1309 - 1313, XP012074135 *

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177181A (ja) * 2008-01-23 2009-08-06 Samsung Electronics Co Ltd 抵抗性メモリ素子及びその製造方法
US8853759B2 (en) 2008-01-23 2014-10-07 Samsung Electronics Co., Ltd. Resistive memory devices and methods of manufacturing the same
JP4563504B2 (ja) * 2008-02-12 2010-10-13 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
JPWO2009101785A1 (ja) * 2008-02-12 2011-06-09 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
US8537605B2 (en) 2008-02-12 2013-09-17 Panasonic Corporation Nonvolatile semiconductor memory device having coplanar surfaces at resistance variable layer and wiring layer and manufacturing method thereof
WO2009101785A1 (ja) * 2008-02-12 2009-08-20 Panasonic Corporation 不揮発性半導体記憶装置及びその製造方法
WO2010079816A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 半導体装置及びその製造方法
US10256400B2 (en) 2009-01-09 2019-04-09 Nec Corporation Semiconductor device and method of manufacturing the same
US9406877B2 (en) 2009-01-09 2016-08-02 Nec Corporation Semiconductor device and method of manufacturing the same
JP5382001B2 (ja) * 2009-01-09 2014-01-08 日本電気株式会社 半導体装置及びその製造方法
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
US9059028B2 (en) 2009-06-25 2015-06-16 Nec Corporation Semiconductor device and method for manufacturing same
JP2013239728A (ja) * 2009-06-25 2013-11-28 Nec Corp 半導体装置及びその製造方法
WO2011024271A1 (ja) * 2009-08-26 2011-03-03 株式会社 東芝 不揮発性記憶素子及び不揮発性記憶装置
US9570682B2 (en) 2009-08-28 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor memory device and method of manufacturing the same
JP2011066285A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性記憶素子および不揮発性記憶装置
US8450715B2 (en) 2009-09-18 2013-05-28 Kabushiki Kaisha Toshiba Nonvolatile metal oxide memory element and nonvolatile memory device
JP2015111712A (ja) * 2009-11-11 2015-06-18 日本電気株式会社 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法
US9231207B2 (en) 2009-11-11 2016-01-05 Nec Corporation Method for forming resistance changing element capable of operating at low voltage
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
KR101113014B1 (ko) * 2010-06-15 2012-02-27 서울대학교산학협력단 스페이서 구조를 갖는 저항성 메모리 소자 및 그 제조방법
JP2015185782A (ja) * 2014-03-26 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置
KR20230131150A (ko) * 2022-03-04 2023-09-12 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 초박막 장벽층을 갖는 저항성 메모리 디바이스 및 그 형성 방법
JP2023129379A (ja) * 2022-03-04 2023-09-14 台湾積體電路製造股▲ふん▼有限公司 超薄バリア層を有する抵抗型メモリ装置及びその形成方法
JP7667810B2 (ja) 2022-03-04 2025-04-23 台湾積體電路製造股▲ふん▼有限公司 超薄バリア層を有する抵抗型メモリ装置及びその形成方法
KR102872761B1 (ko) * 2022-03-04 2025-10-16 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 초박막 장벽층을 갖는 저항성 메모리 디바이스 및 그 형성 방법

Also Published As

Publication number Publication date
JPWO2008149605A1 (ja) 2010-08-19
US20100176363A1 (en) 2010-07-15

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