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WO2008090982A1 - スパッタ方法及びスパッタ装置 - Google Patents

スパッタ方法及びスパッタ装置 Download PDF

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Publication number
WO2008090982A1
WO2008090982A1 PCT/JP2008/051094 JP2008051094W WO2008090982A1 WO 2008090982 A1 WO2008090982 A1 WO 2008090982A1 JP 2008051094 W JP2008051094 W JP 2008051094W WO 2008090982 A1 WO2008090982 A1 WO 2008090982A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputter
film
layer
targets
initial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/051094
Other languages
English (en)
French (fr)
Inventor
Yoshihiko Ueda
Kazuki Moyama
Koji Fukumori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Osaka Vacuum Ltd
Original Assignee
Tokyo Electron Ltd
Osaka Vacuum Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007016723A external-priority patent/JP5059429B2/ja
Priority claimed from JP2007016724A external-priority patent/JP5059430B2/ja
Application filed by Tokyo Electron Ltd, Osaka Vacuum Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020097017633A priority Critical patent/KR101147484B1/ko
Priority to CN200880003117.8A priority patent/CN101595241B/zh
Priority to US12/524,390 priority patent/US20100078309A1/en
Priority to DE112008000252T priority patent/DE112008000252T5/de
Publication of WO2008090982A1 publication Critical patent/WO2008090982A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

　簡単な構成でありながら、低温・低ダメージ成膜が可能であり、且つ生産性の高いスパッタ方法及びスパッタ装置を提供することを課題とする。真空容器内で、被成膜対象物に初期層を成膜した後、さらに第２層を初期層上に成膜するスパッタ方法であって、前記真空容器内において、一対のターゲットを、その表面同士が間隔をおいて互いに対向し且つ該表面がターゲット間の側方に配置される被成膜対象物に向かって傾斜するように配置し、前記一対のターゲットの対向面側に磁場空間を発生させてスパッタリングし、該スパッタリングされたスパッタ粒子で被成膜対象物に初期層を成膜し、さらに初期層の成膜速度よりも速い成膜速度で被成膜対象物に第２層を成膜することを特徴とする。
PCT/JP2008/051094 2007-01-26 2008-01-25 スパッタ方法及びスパッタ装置 Ceased WO2008090982A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097017633A KR101147484B1 (ko) 2007-01-26 2008-01-25 스퍼터링 방법 및 스퍼터링 장치
CN200880003117.8A CN101595241B (zh) 2007-01-26 2008-01-25 溅射方法及溅射装置
US12/524,390 US20100078309A1 (en) 2007-01-26 2008-01-25 Sputtering method and sputtering apparatus
DE112008000252T DE112008000252T5 (de) 2007-01-26 2008-01-25 Sputter-Verfahren und Sputter-Vorrichtung

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007016723A JP5059429B2 (ja) 2007-01-26 2007-01-26 スパッタ方法及びスパッタ装置
JP2007-016724 2007-01-26
JP2007-016723 2007-01-26
JP2007016724A JP5059430B2 (ja) 2007-01-26 2007-01-26 スパッタ方法及びスパッタ装置

Publications (1)

Publication Number Publication Date
WO2008090982A1 true WO2008090982A1 (ja) 2008-07-31

Family

ID=39644556

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051094 Ceased WO2008090982A1 (ja) 2007-01-26 2008-01-25 スパッタ方法及びスパッタ装置

Country Status (5)

Country Link
US (1) US20100078309A1 (ja)
KR (1) KR101147484B1 (ja)
DE (1) DE112008000252T5 (ja)
TW (1) TW200846485A (ja)
WO (1) WO2008090982A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120152726A1 (en) * 2010-12-17 2012-06-21 Harkness Iv Samuel D Method and apparatus to produce high density overcoats
DE102010056343A1 (de) 2010-12-29 2012-07-05 Von Ardenne Anlagentechnik Gmbh Vorrichtung und Verfahren zur Rohrbeschichtung
JP5919259B2 (ja) * 2011-03-31 2016-05-18 三菱樹脂株式会社 ガスバリア積層フィルムとその製造方法
US9605340B2 (en) 2012-07-05 2017-03-28 Intevac, Inc. Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates

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US20100018855A1 (en) * 2008-07-24 2010-01-28 Seagate Technology Llc Inline co-sputter apparatus
JP5570951B2 (ja) * 2009-12-26 2014-08-13 キヤノンアネルバ株式会社 反応性スパッタリング方法及び反応性スパッタリング装置
KR101239575B1 (ko) * 2010-08-16 2013-03-05 고려대학교 산학협력단 기체 차단막 형성 장치 및 그 방법
US20140102888A1 (en) * 2010-12-17 2014-04-17 Intevac, Inc. Method and apparatus to produce high density overcoats
JP5328995B2 (ja) * 2011-02-08 2013-10-30 シャープ株式会社 マグネトロンスパッタリング装置、マグネトロンスパッタリング装置の制御方法、及び成膜方法
KR20130008965A (ko) * 2011-07-14 2013-01-23 에스케이하이닉스 주식회사 반도체 제조 장비 및 구동 방법, 이를 이용한 자기저항소자의 제조 방법
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
KR101557341B1 (ko) * 2012-09-26 2015-10-06 (주)비엠씨 플라즈마 화학 기상 증착 장치
US9303312B2 (en) * 2013-03-06 2016-04-05 Areesys Technologies, Inc. Film deposition apparatus with low plasma damage and low processing temperature
EP2811508B1 (en) * 2013-06-07 2019-04-24 Soleras Advanced Coatings bvba Gas configuration for magnetron deposition systems
US20150187574A1 (en) * 2013-12-26 2015-07-02 Lg Display Co. Ltd. IGZO with Intra-Layer Variations and Methods for Forming the Same
WO2015149857A1 (en) * 2014-04-03 2015-10-08 Applied Materials, Inc. Sputtering arrangement for sputtering a material on a substrate surface
JP6329110B2 (ja) * 2014-09-30 2018-05-23 芝浦メカトロニクス株式会社 プラズマ処理装置
WO2016185714A1 (ja) * 2015-05-19 2016-11-24 株式会社アルバック マグネトロンスパッタリング装置用の回転式カソードユニット
KR101707975B1 (ko) 2015-07-08 2017-02-20 주식회사 케이랩 스퍼터링 장치
CN105088159B (zh) * 2015-08-12 2018-08-03 京东方科技集团股份有限公司 一种磁控溅射装置
JP6823392B2 (ja) * 2016-07-05 2021-02-03 東京エレクトロン株式会社 絶縁膜を形成する方法
EP3279364B1 (en) * 2016-08-03 2021-10-06 IHI Hauzer Techno Coating B.V. Apparatus for coating substrates
CZ306980B6 (cs) * 2016-09-27 2017-10-25 Fyzikální ústav AV ČR, v.v.i. Způsob řízení rychlosti depozice tenkých vrstev ve vakuovém vícetryskovém plazmovém systému a zařízení k provádění tohoto způsobu
KR102686242B1 (ko) 2017-01-23 2024-07-17 에드워드 코리아 주식회사 질소 산화물 감소 장치 및 가스 처리 장치
KR102646623B1 (ko) * 2017-01-23 2024-03-11 에드워드 코리아 주식회사 플라즈마 발생 장치 및 가스 처리 장치
KR102552593B1 (ko) * 2017-12-28 2023-07-06 (주)선익시스템 각도 조절형 스퍼터건
KR102552612B1 (ko) * 2017-12-28 2023-07-06 (주)선익시스템 박막 균일성이 향상된 반응형 스퍼터장치
KR102548205B1 (ko) * 2017-12-28 2023-06-27 (주)선익시스템 스퍼터링 장치용 스퍼터건
KR102552647B1 (ko) * 2017-12-28 2023-07-06 (주)선익시스템 중심전자석을 포함하는 스퍼터장치용 스퍼터건
KR102552536B1 (ko) * 2017-12-28 2023-07-06 (주)선익시스템 각도조절형 스퍼터건을 구비한 스퍼터장치
KR102548201B1 (ko) * 2017-12-28 2023-06-27 (주)선익시스템 고효율 스퍼터장치
KR102664532B1 (ko) * 2018-01-29 2024-05-09 주식회사 선익시스템 박막 균일성이 향상된 반응형 스퍼터장치
US10580627B2 (en) 2018-04-26 2020-03-03 Keihin Ramtech Co., Ltd. Sputtering cathode, sputtering cathode assembly, and sputtering apparatus
JP2019189913A (ja) * 2018-04-26 2019-10-31 京浜ラムテック株式会社 スパッタリングカソード、スパッタリングカソード集合体およびスパッタリング装置
CN111893441A (zh) * 2019-05-06 2020-11-06 领凡新能源科技(北京)有限公司 膜层的制备方法和反应腔室
JP7584735B2 (ja) * 2020-03-13 2024-11-18 日新電機株式会社 スパッタリング装置
DE102020212353A1 (de) 2020-09-30 2022-03-31 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines optischen Elements, optisches Element, Vorrichtung zur Herstellung eines optischen Elements, Sekundärgas und Projektionsbelichtungsanlage
CN113913775A (zh) * 2021-09-30 2022-01-11 浙江师范大学 对向靶磁控溅射无损伤薄膜沉积系统
CN116949409A (zh) * 2023-09-06 2023-10-27 安徽光智科技有限公司 磁控溅射设备

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JPS57141930A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Device for formation of thin film
JPS62211374A (ja) * 1986-03-12 1987-09-17 Fujitsu Ltd スパツタリング装置
JPH01298154A (ja) * 1988-05-26 1989-12-01 Kikuo Tominaga 対向ターゲット式プレーナーマグネトロンスパッタリング装置
JPH1129860A (ja) * 1997-07-14 1999-02-02 Bridgestone Corp スパッタ膜の作製方法及び対向ターゲット式スパッタリング装置
JP2003096561A (ja) * 2001-09-25 2003-04-03 Sharp Corp スパッタ装置
JP2004285445A (ja) * 2003-03-24 2004-10-14 Osaka Vacuum Ltd スパッタ方法及びスパッタ装置
WO2007010798A1 (ja) * 2005-07-19 2007-01-25 Ulvac, Inc. スパッタリング装置、透明導電膜の製造方法

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JPS57141930A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Device for formation of thin film
JPS62211374A (ja) * 1986-03-12 1987-09-17 Fujitsu Ltd スパツタリング装置
JPH01298154A (ja) * 1988-05-26 1989-12-01 Kikuo Tominaga 対向ターゲット式プレーナーマグネトロンスパッタリング装置
JPH1129860A (ja) * 1997-07-14 1999-02-02 Bridgestone Corp スパッタ膜の作製方法及び対向ターゲット式スパッタリング装置
JP2003096561A (ja) * 2001-09-25 2003-04-03 Sharp Corp スパッタ装置
JP2004285445A (ja) * 2003-03-24 2004-10-14 Osaka Vacuum Ltd スパッタ方法及びスパッタ装置
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120152726A1 (en) * 2010-12-17 2012-06-21 Harkness Iv Samuel D Method and apparatus to produce high density overcoats
DE102010056343A1 (de) 2010-12-29 2012-07-05 Von Ardenne Anlagentechnik Gmbh Vorrichtung und Verfahren zur Rohrbeschichtung
JP5919259B2 (ja) * 2011-03-31 2016-05-18 三菱樹脂株式会社 ガスバリア積層フィルムとその製造方法
US9605340B2 (en) 2012-07-05 2017-03-28 Intevac, Inc. Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates

Also Published As

Publication number Publication date
DE112008000252T5 (de) 2009-12-17
KR20090106629A (ko) 2009-10-09
US20100078309A1 (en) 2010-04-01
TW200846485A (en) 2008-12-01
KR101147484B1 (ko) 2012-05-22

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