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WO2008083294A3 - Solar cell having active region with nanostructures having energy wells - Google Patents

Solar cell having active region with nanostructures having energy wells Download PDF

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Publication number
WO2008083294A3
WO2008083294A3 PCT/US2007/089074 US2007089074W WO2008083294A3 WO 2008083294 A3 WO2008083294 A3 WO 2008083294A3 US 2007089074 W US2007089074 W US 2007089074W WO 2008083294 A3 WO2008083294 A3 WO 2008083294A3
Authority
WO
WIPO (PCT)
Prior art keywords
active region
energy wells
nanostructures
solar cell
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/089074
Other languages
French (fr)
Other versions
WO2008083294A2 (en
Inventor
James C Kim
Sungsoo Yi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sundiode Inc
Original Assignee
Sundiode Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sundiode Inc filed Critical Sundiode Inc
Priority to EP07870046A priority Critical patent/EP2102913A2/en
Publication of WO2008083294A2 publication Critical patent/WO2008083294A2/en
Publication of WO2008083294A3 publication Critical patent/WO2008083294A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III - V compound semiconductor and an element that alters the band gap of the III - V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the 'band gap altering element' could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be 'graded', by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
PCT/US2007/089074 2006-12-29 2007-12-28 Solar cell having active region with nanostructures having energy wells Ceased WO2008083294A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07870046A EP2102913A2 (en) 2006-12-29 2007-12-28 Solar cell having active region with nanostructures having energy wells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/648,059 2006-12-29
US11/648,059 US7629532B2 (en) 2006-12-29 2006-12-29 Solar cell having active region with nanostructures having energy wells

Publications (2)

Publication Number Publication Date
WO2008083294A2 WO2008083294A2 (en) 2008-07-10
WO2008083294A3 true WO2008083294A3 (en) 2008-12-31

Family

ID=39582212

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/089074 Ceased WO2008083294A2 (en) 2006-12-29 2007-12-28 Solar cell having active region with nanostructures having energy wells

Country Status (5)

Country Link
US (2) US7629532B2 (en)
EP (1) EP2102913A2 (en)
KR (1) KR20090116724A (en)
CN (1) CN101589474A (en)
WO (1) WO2008083294A2 (en)

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US20080178931A1 (en) * 2007-01-26 2008-07-31 Hye-Won Seo Multi-junction solar cell
TW200849625A (en) * 2007-04-09 2008-12-16 Univ California Low resistance tunnel junctions for high efficiency tandem solar cells
WO2008156421A2 (en) * 2007-06-19 2008-12-24 Qunano Ab Nanowire-based solar cell structure
KR20090054260A (en) * 2007-11-26 2009-05-29 삼성전기주식회사 Solar cell
US20090173373A1 (en) * 2008-01-07 2009-07-09 Wladyslaw Walukiewicz Group III-Nitride Solar Cell with Graded Compositions
US8030729B2 (en) * 2008-01-29 2011-10-04 Hewlett-Packard Development Company, L.P. Device for absorbing or emitting light and methods of making the same
US8390005B2 (en) * 2008-06-30 2013-03-05 Hewlett-Packard Development Company, L.P. Apparatus and method for nanowire optical emission
US20100012168A1 (en) * 2008-07-18 2010-01-21 Honeywell International Quantum dot solar cell
EP2321856A1 (en) * 2008-09-04 2011-05-18 QuNano AB Nanostructured photodiode
US20100224237A1 (en) * 2009-03-04 2010-09-09 Sundiode Inc. Solar cell with backside contact network
US8242353B2 (en) 2009-03-16 2012-08-14 International Business Machines Corporation Nanowire multijunction solar cell
WO2010117330A1 (en) * 2009-04-09 2010-10-14 Fredrik Boxberg Photovoltaic device, and a manufacturing method thereof
US20100269895A1 (en) * 2009-04-27 2010-10-28 Katherine Louise Smith Multijunction photovoltaic structure with three-dimensional subcell
KR101245371B1 (en) * 2009-06-19 2013-03-19 한국전자통신연구원 Solar cell and method of fabricating the same
US9178091B2 (en) 2009-07-20 2015-11-03 Soitec Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
US9559229B2 (en) * 2009-12-31 2017-01-31 Epistar Corporation Multi-junction solar cell
KR101652406B1 (en) * 2010-02-19 2016-08-30 삼성전자주식회사 Electric energy generator
US8659037B2 (en) 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
US8476637B2 (en) 2010-06-08 2013-07-02 Sundiode Inc. Nanostructure optoelectronic device having sidewall electrical contact
CN103069585B (en) * 2010-06-08 2017-06-16 桑迪奥德股份有限公司 Nanostructured optoelectronic devices with sidewall electrical contacts
US8431817B2 (en) 2010-06-08 2013-04-30 Sundiode Inc. Multi-junction solar cell having sidewall bi-layer electrical interconnect
US8217258B2 (en) * 2010-07-09 2012-07-10 Ostendo Technologies, Inc. Alternating bias hot carrier solar cells
US9620670B2 (en) * 2010-09-02 2017-04-11 Micron Technology, Inc. Solid state lighting dies with quantum emitters and associated methods of manufacturing
GB201020843D0 (en) * 2010-12-09 2011-01-19 Univ Nottingham Solar cells based on InGaN
KR101208272B1 (en) * 2011-02-24 2012-12-10 한양대학교 산학협력단 Solar Cell of having Photovoltaic Structures on Both Sides of Substrate and Method of forming the same
US10170652B2 (en) 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
JP6335784B2 (en) * 2011-09-23 2018-05-30 ガリウム エンタープライジズ ピーティーワイ リミテッド Variable band gap solar cell
KR101399441B1 (en) * 2012-03-06 2014-05-28 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 Multi-quantum well solar cell and method of manufacturing multi-quantum well solar cell
JP6060652B2 (en) * 2012-11-28 2017-01-18 富士通株式会社 Solar cell and manufacturing method thereof
CN103094378B (en) * 2013-01-28 2016-09-14 中国科学院半导体研究所 Containing the back of the body incidence solaode becoming In component InGaN/GaN multi-layer quantum well structure
FR3011381B1 (en) * 2013-09-30 2017-12-08 Aledia OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
US20190348563A1 (en) 2017-01-05 2019-11-14 Brilliant Light Power, Inc. Extreme and deep ultraviolet photovoltaic cell
KR102377550B1 (en) * 2017-05-19 2022-03-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device and semiconductor device package including the same
CN108630777B (en) * 2018-04-23 2019-11-12 华南师范大学 Hybrid device for solar hydrogen production by water dissociation and method for manufacturing the same

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US20060057360A1 (en) * 2003-11-26 2006-03-16 Samuelson Lars I Nanostructures formed of branched nanowhiskers and methods of producing the same
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US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices

Also Published As

Publication number Publication date
US20080156366A1 (en) 2008-07-03
KR20090116724A (en) 2009-11-11
EP2102913A2 (en) 2009-09-23
US7629532B2 (en) 2009-12-08
WO2008083294A2 (en) 2008-07-10
US20100047957A1 (en) 2010-02-25
CN101589474A (en) 2009-11-25

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