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WO2011072188A3 - Removal of masking material - Google Patents

Removal of masking material Download PDF

Info

Publication number
WO2011072188A3
WO2011072188A3 PCT/US2010/059800 US2010059800W WO2011072188A3 WO 2011072188 A3 WO2011072188 A3 WO 2011072188A3 US 2010059800 W US2010059800 W US 2010059800W WO 2011072188 A3 WO2011072188 A3 WO 2011072188A3
Authority
WO
WIPO (PCT)
Prior art keywords
masking material
cerium
removal
salt
additional oxidant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/059800
Other languages
French (fr)
Other versions
WO2011072188A2 (en
Inventor
Ali Afzali-Ardakani
Thomas H. Baum
Karl E. Boggs
Emanuel I. Cooper
Douglas Cywar
Matthew Kern
Mahmoud Khojasteh
George Gabriel Totir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
International Business Machines Corp
Original Assignee
Advanced Technology Materials Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/636,015 external-priority patent/US8367555B2/en
Application filed by Advanced Technology Materials Inc, International Business Machines Corp filed Critical Advanced Technology Materials Inc
Priority to JP2012543300A priority Critical patent/JP2013513824A/en
Priority to CN2010800629333A priority patent/CN103119694A/en
Priority to SG2012042941A priority patent/SG181642A1/en
Priority to EP10836729.3A priority patent/EP2510538A4/en
Publication of WO2011072188A2 publication Critical patent/WO2011072188A2/en
Publication of WO2011072188A3 publication Critical patent/WO2011072188A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P50/287—
    • H10P50/613—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
  • Detergent Compositions (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.
PCT/US2010/059800 2009-12-11 2010-12-10 Removal of masking material Ceased WO2011072188A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012543300A JP2013513824A (en) 2009-12-11 2010-12-10 Removal of masking material
CN2010800629333A CN103119694A (en) 2009-12-11 2010-12-10 Masking Material Removal
SG2012042941A SG181642A1 (en) 2009-12-11 2010-12-10 Removal of masking material
EP10836729.3A EP2510538A4 (en) 2009-12-11 2010-12-10 REMOVAL OF MASKING MATERIAL

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/636,015 US8367555B2 (en) 2009-12-11 2009-12-11 Removal of masking material
US12/636,015 2009-12-11
US35624210P 2010-06-18 2010-06-18
US61/356,242 2010-06-18

Publications (2)

Publication Number Publication Date
WO2011072188A2 WO2011072188A2 (en) 2011-06-16
WO2011072188A3 true WO2011072188A3 (en) 2011-09-15

Family

ID=44146190

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/059800 Ceased WO2011072188A2 (en) 2009-12-11 2010-12-10 Removal of masking material

Country Status (7)

Country Link
EP (1) EP2510538A4 (en)
JP (1) JP2013513824A (en)
KR (1) KR20120108984A (en)
CN (1) CN103119694A (en)
SG (1) SG181642A1 (en)
TW (1) TW201140254A (en)
WO (1) WO2011072188A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140318584A1 (en) 2011-01-13 2014-10-30 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium-containing solutions
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
JP2015517691A (en) * 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド Composition and process for stripping photoresist from a surface comprising titanium nitride
CN103235491A (en) * 2013-04-07 2013-08-07 北京七星华创电子股份有限公司 Resist stripper and application thereof
US10347503B2 (en) 2013-11-11 2019-07-09 Tokyo Electron Limited Method and hardware for enhanced removal of post etch polymer and hardmask removal
TWI595332B (en) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 Photoresist stripping method
CN106435616B (en) * 2016-10-10 2018-09-07 深圳大学 A kind of decoating liquid and withdrawal plating of TiNC films
KR101971459B1 (en) * 2017-06-05 2019-04-23 재원산업 주식회사 Composition for cleaning conductive member for fabricating organic light emitting device and cleaning method using the same
WO2019151001A1 (en) * 2018-02-05 2019-08-08 富士フイルム株式会社 Method for processing substrate, method for manufacturing semiconductor device, and substrate-processing kit
CN115152005A (en) * 2020-02-25 2022-10-04 株式会社德山 Ruthenium-containing treatment liquid for semiconductor
CN115066104A (en) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 Stripping liquid for thick photoresist

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
JP2002064101A (en) * 2000-08-21 2002-02-28 Casio Comput Co Ltd Method of forming wiring having chromium layer
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
US20030003754A1 (en) * 2001-06-29 2003-01-02 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device and semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19639093A1 (en) * 1996-09-24 1998-03-26 Bosch Gmbh Robert Method for the wireless transmission of location information and useful information and transmitting / receiving device
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
JP5199339B2 (en) * 2007-05-18 2013-05-15 ティーイーエル エフエスアイ，インコーポレイティド Substrate processing method using water vapor or steam

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
JP2002064101A (en) * 2000-08-21 2002-02-28 Casio Comput Co Ltd Method of forming wiring having chromium layer
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
US20030003754A1 (en) * 2001-06-29 2003-01-02 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device and semiconductor device

Also Published As

Publication number Publication date
EP2510538A4 (en) 2014-03-26
JP2013513824A (en) 2013-04-22
SG181642A1 (en) 2012-07-30
TW201140254A (en) 2011-11-16
CN103119694A (en) 2013-05-22
KR20120108984A (en) 2012-10-05
EP2510538A2 (en) 2012-10-17
WO2011072188A2 (en) 2011-06-16

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