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TW200833885A - Nitride semiconductor device and nitride semiconductor manufacturing method - Google Patents

Nitride semiconductor device and nitride semiconductor manufacturing method

Info

Publication number
TW200833885A
TW200833885A TW096148118A TW96148118A TW200833885A TW 200833885 A TW200833885 A TW 200833885A TW 096148118 A TW096148118 A TW 096148118A TW 96148118 A TW96148118 A TW 96148118A TW 200833885 A TW200833885 A TW 200833885A
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
iii
semiconductor layer
ratio
iii nitride
Prior art date
Application number
TW096148118A
Other languages
Chinese (zh)
Inventor
Kuniyoshi Okamoto
Hiroaki Ohta
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200833885A publication Critical patent/TW200833885A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H10P14/24—
    • H10P14/2908—
    • H10P14/2926—
    • H10P14/3216—
    • H10P14/3416—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H10P14/2904—
    • H10P14/3441—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A nitride semiconductor device includes a first III nitride semiconductor layer and a second III nitride semiconductor layer. The first III nitride semiconductor layer has a V/III ratio, I.e., a ratio of the nitrogen material (molar ratio) to the III element material (more specifically, gallium material), at a prescribed ratio of first V/III, and has a growing main plane other than a c-plane. The second III nitride semiconductor layer is arranged on the first III nitride semiconductor layer, has a second V/III ratio higher than the first V/III ratio, and has the growing main plane same as that of the first III nitride semiconductor layer.
TW096148118A 2006-12-14 2007-12-14 Nitride semiconductor device and nitride semiconductor manufacturing method TW200833885A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006337249A JP2008153285A (en) 2006-12-14 2006-12-14 Nitride semiconductor device and nitride semiconductor manufacturing method

Publications (1)

Publication Number Publication Date
TW200833885A true TW200833885A (en) 2008-08-16

Family

ID=39511622

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096148118A TW200833885A (en) 2006-12-14 2007-12-14 Nitride semiconductor device and nitride semiconductor manufacturing method

Country Status (3)

Country Link
JP (1) JP2008153285A (en)
TW (1) TW200833885A (en)
WO (1) WO2008072601A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102754226A (en) * 2010-04-28 2012-10-24 松下电器产业株式会社 Nitride-type semiconductor element and process for production thereof
TWI401729B (en) * 2008-10-16 2013-07-11 榮創能源科技股份有限公司 Method for blocking semiconductor differential discharge defects
US8580590B2 (en) 2008-10-13 2013-11-12 Advanced Optoelectronic Technology, Inc. Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor
CN104205297A (en) * 2012-03-21 2014-12-10 首尔伟傲世有限公司 Method of fabricating non-polar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4572963B2 (en) * 2008-07-09 2010-11-04 住友電気工業株式会社 Group III nitride semiconductor light emitting device and epitaxial wafer
WO2010052810A1 (en) 2008-11-06 2010-05-14 パナソニック株式会社 Nitride semiconductor element and method for manufacturing the same
EP2273573A4 (en) * 2009-03-11 2012-11-14 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
WO2010113238A1 (en) 2009-04-03 2010-10-07 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same
WO2010113237A1 (en) * 2009-04-03 2010-10-07 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same
WO2010116703A1 (en) * 2009-04-06 2010-10-14 パナソニック株式会社 Nitride semiconductor element and method for production thereof
WO2011077704A1 (en) * 2009-12-25 2011-06-30 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same
US8124986B2 (en) 2010-01-18 2012-02-28 Panasonic Corporation Nitride-based semiconductor device and method for fabricating the same
KR101752407B1 (en) 2010-02-24 2017-07-11 엘지전자 주식회사 method for fabricating nitride semiconductor device
CN102687292B (en) 2010-04-01 2014-09-24 松下电器产业株式会社 Nitride semiconductor element and manufacturing method therefor
CN102598320B (en) 2010-04-02 2016-01-13 松下知识产权经营株式会社 Nitride semiconductor device
JPWO2011135866A1 (en) 2010-04-28 2013-07-18 パナソニック株式会社 Nitride-based semiconductor device and manufacturing method thereof
JP5641505B2 (en) * 2011-04-22 2014-12-17 パナソニックＩｐマネジメント株式会社 Method for manufacturing nitride-based semiconductor light-emitting device
JP5682716B2 (en) * 2014-01-09 2015-03-11 三菱化学株式会社 Nitride semiconductor
JP2022095485A (en) * 2020-12-16 2022-06-28 豊田合成株式会社 Light emitting device and its manufacturing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832313B2 (en) * 2001-11-02 2006-10-11 日亜化学工業株式会社 Nitride semiconductor growth method and nitride semiconductor
SG135924A1 (en) * 2003-04-02 2007-10-29 Sumitomo Electric Industries Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate
JP5379973B2 (en) * 2004-05-10 2013-12-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy
JP4781028B2 (en) * 2004-07-21 2011-09-28 昭和電工株式会社 Group III nitride semiconductor laminate and method for manufacturing group III nitride semiconductor light emitting device
JP4140606B2 (en) * 2005-01-11 2008-08-27 ソニー株式会社 GaN-based semiconductor light emitting device manufacturing method
JP4915128B2 (en) * 2005-04-11 2012-04-11 日亜化学工業株式会社 Nitride semiconductor wafer and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580590B2 (en) 2008-10-13 2013-11-12 Advanced Optoelectronic Technology, Inc. Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor
TWI416757B (en) * 2008-10-13 2013-11-21 榮創能源科技股份有限公司 Multi-wavelength light-emitting diode and manufacturing method thereof
TWI401729B (en) * 2008-10-16 2013-07-11 榮創能源科技股份有限公司 Method for blocking semiconductor differential discharge defects
CN102754226A (en) * 2010-04-28 2012-10-24 松下电器产业株式会社 Nitride-type semiconductor element and process for production thereof
CN102754226B (en) * 2010-04-28 2015-07-15 松下电器产业株式会社 Nitride-type semiconductor element and process for production thereof
CN104205297A (en) * 2012-03-21 2014-12-10 首尔伟傲世有限公司 Method of fabricating non-polar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
US9966497B2 (en) 2012-03-21 2018-05-08 Seoul Viosys Co., Ltd. Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
CN104205297B (en) * 2012-03-21 2018-06-15 首尔伟傲世有限公司 Method, non-polar semiconductor device and its manufacturing method of the nonpolar gallium nitride-based semiconductor of manufacture

Also Published As

Publication number Publication date
WO2008072601A1 (en) 2008-06-19
JP2008153285A (en) 2008-07-03

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