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WO2008081824A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008081824A1
WO2008081824A1 PCT/JP2007/074979 JP2007074979W WO2008081824A1 WO 2008081824 A1 WO2008081824 A1 WO 2008081824A1 JP 2007074979 W JP2007074979 W JP 2007074979W WO 2008081824 A1 WO2008081824 A1 WO 2008081824A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
copper
film formed
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074979
Other languages
English (en)
French (fr)
Inventor
Hiraku Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to EP07860208A priority Critical patent/EP2112685A4/en
Priority to US12/521,397 priority patent/US8017519B2/en
Publication of WO2008081824A1 publication Critical patent/WO2008081824A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P14/6336—
    • H10P70/277—
    • H10W20/037—
    • H10W20/055—
    • H10W20/056—
    • H10W20/064—
    • H10W20/071—
    • H10W20/077—
    • H10W20/425—
    • H10W20/48—
    • H10P14/6334—
    • H10P14/6342—
    • H10P14/6506—
    • H10P14/6902—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

　本発明は、基板と、基板の上に形成された銅または銅合金からなる配線層と、前記配線層の上に形成され、炭化水素ガスを含む処理ガスを用いたＣＶＤにより成膜されたアモルファスカーボン膜からなる銅拡散バリア膜と、前記銅拡散バリア膜の上に形成された低誘電率絶縁膜と、を備えたことを特徴とする半導体装置である。
PCT/JP2007/074979 2006-12-28 2007-12-26 半導体装置およびその製造方法 Ceased WO2008081824A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07860208A EP2112685A4 (en) 2006-12-28 2007-12-26 SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US12/521,397 US8017519B2 (en) 2006-12-28 2007-12-26 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006-355132 2006-12-28
JP2006355132 2006-12-28
JP2007-130142 2007-05-16
JP2007130142A JP5154140B2 (ja) 2006-12-28 2007-05-16 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
WO2008081824A1 true WO2008081824A1 (ja) 2008-07-10

Family

ID=39588506

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074979 Ceased WO2008081824A1 (ja) 2006-12-28 2007-12-26 半導体装置およびその製造方法

Country Status (6)

Country Link
US (1) US8017519B2 (ja)
EP (1) EP2112685A4 (ja)
JP (1) JP5154140B2 (ja)
KR (1) KR101076470B1 (ja)
TW (1) TW200834733A (ja)
WO (1) WO2008081824A1 (ja)

Cited By (1)

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WO2012107162A1 (de) 2011-02-10 2012-08-16 Trw Automotive Gmbh Gurtaufroller für einen fahrzeug-sicherheitsgurt

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JP5133852B2 (ja) * 2008-11-13 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
JP2011014872A (ja) * 2009-06-04 2011-01-20 Tokyo Electron Ltd アモルファスカーボン膜の形成方法および形成装置
JP5351948B2 (ja) * 2009-06-04 2013-11-27 東京エレクトロン株式会社 アモルファスカーボン膜の形成方法および形成装置
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
US8524329B2 (en) 2011-12-13 2013-09-03 Lam Research Corporation Electroless copper deposition
US9142456B2 (en) * 2013-07-30 2015-09-22 Lam Research Corporation Method for capping copper interconnect lines
JP6469435B2 (ja) * 2014-10-30 2019-02-13 太陽誘電ケミカルテクノロジー株式会社 構造体及び構造体製造方法
US20160276156A1 (en) * 2015-03-16 2016-09-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing process thereof
CN108352370A (zh) * 2016-09-06 2018-07-31 古德系统有限公司 用于高功率元件的散热板
KR102217242B1 (ko) 2017-03-08 2021-02-18 삼성전자주식회사 집적회로 소자 및 그 제조 방법
US10276505B2 (en) 2017-03-08 2019-04-30 Samsung Electronics Co., Ltd. Integrated circuit device and method of manufacturing the same
JP2018159102A (ja) * 2017-03-22 2018-10-11 株式会社東芝 金属パターンの形成方法
TWI723282B (zh) * 2017-09-16 2021-04-01 美商應用材料股份有限公司 藉由矽化法之含金屬薄膜體積膨脹
WO2019212592A1 (en) * 2018-05-03 2019-11-07 Applied Materials, Inc. Pulsed plasma (dc/rf) deposition of high quality c films for patterning
TWI757659B (zh) * 2018-11-23 2022-03-11 美商應用材料股份有限公司 碳膜的選擇性沉積及其用途
WO2023113163A1 (ko) * 2021-12-14 2023-06-22 주식회사 엘지화학 원격 챔버 및 이를 이용한 dart-ms 시스템
KR102869564B1 (ko) * 2021-12-14 2025-10-13 주식회사 엘지화학 원격 챔버 및 이를 이용한 dart-ms 시스템

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Publication number Priority date Publication date Assignee Title
JPH09321045A (ja) * 1996-05-30 1997-12-12 Nec Corp 半導体装置およびその製造方法
JP2001319928A (ja) * 2000-05-08 2001-11-16 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2004193544A (ja) * 2002-05-08 2004-07-08 Nec Electronics Corp 半導体装置、および半導体装置の製造方法
JP2005050859A (ja) * 2003-07-29 2005-02-24 Renesas Technology Corp 半導体装置の製造方法
WO2005087974A2 (en) * 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
JP2006253504A (ja) * 2005-03-11 2006-09-21 Nec Electronics Corp 半導体装置およびその製造方法
JP2006294941A (ja) * 2005-04-12 2006-10-26 Toshiba Corp 半導体装置及びその製造方法
JP2006324584A (ja) * 2005-05-20 2006-11-30 Sharp Corp 半導体装置およびその製造方法

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JP2997371B2 (ja) * 1992-10-27 2000-01-11 川崎製鉄株式会社 集積回路装置
US5559367A (en) * 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
JP3228183B2 (ja) * 1996-12-02 2001-11-12 日本電気株式会社 絶縁膜ならびにその絶縁膜を有する半導体装置とその製造方法
US6492266B1 (en) * 1998-07-09 2002-12-10 Advanced Micro Devices, Inc. Method of forming reliable capped copper interconnects
US6331481B1 (en) * 1999-01-04 2001-12-18 International Business Machines Corporation Damascene etchback for low ε dielectric
US6342733B1 (en) * 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
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JP2001144090A (ja) * 1999-11-11 2001-05-25 Nec Corp 半導体装置の製造方法
US6815329B2 (en) * 2000-02-08 2004-11-09 International Business Machines Corporation Multilayer interconnect structure containing air gaps and method for making
US6417092B1 (en) * 2000-04-05 2002-07-09 Novellus Systems, Inc. Low dielectric constant etch stop films
JP2002194547A (ja) * 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
JP4535629B2 (ja) * 2001-02-21 2010-09-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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US6977218B2 (en) * 2003-07-17 2005-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating copper interconnects
US7064078B2 (en) * 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321045A (ja) * 1996-05-30 1997-12-12 Nec Corp 半導体装置およびその製造方法
JP2001319928A (ja) * 2000-05-08 2001-11-16 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2004193544A (ja) * 2002-05-08 2004-07-08 Nec Electronics Corp 半導体装置、および半導体装置の製造方法
JP2005050859A (ja) * 2003-07-29 2005-02-24 Renesas Technology Corp 半導体装置の製造方法
WO2005087974A2 (en) * 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
JP2006253504A (ja) * 2005-03-11 2006-09-21 Nec Electronics Corp 半導体装置およびその製造方法
JP2006294941A (ja) * 2005-04-12 2006-10-26 Toshiba Corp 半導体装置及びその製造方法
JP2006324584A (ja) * 2005-05-20 2006-11-30 Sharp Corp 半導体装置およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of EP2112685A4
T. SAITO ET AL., PROCEEDING OF IITC, 2001, pages 15 - 17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012107162A1 (de) 2011-02-10 2012-08-16 Trw Automotive Gmbh Gurtaufroller für einen fahrzeug-sicherheitsgurt

Also Published As

Publication number Publication date
EP2112685A4 (en) 2012-01-04
TW200834733A (en) 2008-08-16
JP5154140B2 (ja) 2013-02-27
KR20090088963A (ko) 2009-08-20
US8017519B2 (en) 2011-09-13
EP2112685A1 (en) 2009-10-28
KR101076470B1 (ko) 2011-10-25
JP2008182174A (ja) 2008-08-07
US20100323516A1 (en) 2010-12-23

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