[go: up one dir, main page]

WO2008111134A1 - 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法 - Google Patents

表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法 Download PDF

Info

Publication number
WO2008111134A1
WO2008111134A1 PCT/JP2007/000228 JP2007000228W WO2008111134A1 WO 2008111134 A1 WO2008111134 A1 WO 2008111134A1 JP 2007000228 W JP2007000228 W JP 2007000228W WO 2008111134 A1 WO2008111134 A1 WO 2008111134A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
film
hydrophobicized film
hydrophobicized
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/000228
Other languages
English (en)
French (fr)
Inventor
Tadahiro Imada
Yoshihiro Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to EP07736885.0A priority Critical patent/EP2124249B1/en
Priority to CN2007800521789A priority patent/CN101647106B/zh
Priority to PCT/JP2007/000228 priority patent/WO2008111134A1/ja
Priority to KR1020097019185A priority patent/KR101132095B1/ko
Priority to JP2009503777A priority patent/JP5131267B2/ja
Publication of WO2008111134A1 publication Critical patent/WO2008111134A1/ja
Priority to US12/545,596 priority patent/US8089138B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B17/00—Insulators or insulating bodies characterised by their form
    • H01B17/56—Insulating bodies
    • H10D64/011—
    • H10P14/60—
    • H10P14/6923—
    • H10W20/076—
    • H10W20/096—
    • H10W20/47—
    • H10W20/48—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/30—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen phosphorus-containing groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H10P14/6342—
    • H10P14/665—
    • H10P14/6686—
    • H10P14/6922—
    • H10W20/084—
    • H10W20/425—
    • H10W72/5522—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

リーク電流量が少なく、ＥＭ（エレクトロマイグレーション）耐性、ＴＤＤＢ（時間依存性絶縁破壊）耐性の高い配線層を得ることができ、これにより、消費電力が小さく、信頼性の高い半導体装置を製造することができる技術を提供する。本発明に係る表面疎水化膜は、絶縁膜と接触した表面疎水化膜であって、接触時の絶縁膜よりも疎水性が大きく、その反対側の面で配線とも接触し、硫黄原子、リン原子および窒素原子からなる群から選ばれた少なくとも一つの原子を含む。
PCT/JP2007/000228 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法 Ceased WO2008111134A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP07736885.0A EP2124249B1 (en) 2007-03-15 2007-03-15 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device
CN2007800521789A CN101647106B (zh) 2007-03-15 2007-03-15 表面疏水化膜、表面疏水化膜形成材料、布线层、半导体装置及其制造方法
PCT/JP2007/000228 WO2008111134A1 (ja) 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法
KR1020097019185A KR101132095B1 (ko) 2007-03-15 2007-03-15 표면 소수화막, 표면 소수화막 형성 재료, 배선층, 반도체 장치 및 반도체 장치의 제조방법
JP2009503777A JP5131267B2 (ja) 2007-03-15 2007-03-15 表面疎水化膜形成材料、多層配線構造、半導体装置および半導体装置の製造方法
US12/545,596 US8089138B2 (en) 2007-03-15 2009-08-21 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/000228 WO2008111134A1 (ja) 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/545,596 Continuation US8089138B2 (en) 2007-03-15 2009-08-21 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device

Publications (1)

Publication Number Publication Date
WO2008111134A1 true WO2008111134A1 (ja) 2008-09-18

Family

ID=39759085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/000228 Ceased WO2008111134A1 (ja) 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US8089138B2 (ja)
EP (1) EP2124249B1 (ja)
JP (1) JP5131267B2 (ja)
KR (1) KR101132095B1 (ja)
CN (1) CN101647106B (ja)
WO (1) WO2008111134A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013103962A (ja) * 2011-11-11 2013-05-30 Central Glass Co Ltd 窒化ケイ素含有ウェハ用の表面処理剤、表面処理液、及び表面処理方法
EP4361201A4 (en) * 2021-06-23 2025-06-18 Toray Fine Chemicals Co., Ltd. PROCESS FOR PRODUCING SILICONE POLYMER

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105336662B (zh) * 2014-05-29 2018-06-01 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
KR102352232B1 (ko) * 2015-06-15 2022-01-17 삼성전자주식회사 콘택 구조체들을 갖는 반도체 소자의 제조 방법
CN107966865A (zh) * 2017-12-18 2018-04-27 深圳市华星光电半导体显示技术有限公司 阵列基板的制作方法、阵列基板及显示面板
KR102782694B1 (ko) * 2019-08-21 2025-03-18 브레우어 사이언스, 인코포레이션 Euv 리소그래피를 위한 하층

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267946A (ja) 1993-03-16 1994-09-22 Kawasaki Steel Corp 金属膜の選択形成方法
JP2004511896A (ja) 2000-06-23 2004-04-15 ハネウェル・インターナショナル・インコーポレーテッド 誘電フィルム及び材料における疎水性を回復する方法
JP2004292304A (ja) 2002-09-09 2004-10-21 Mitsui Chemicals Inc 多孔質フィルムの改質方法、改質された多孔質フィルム及びその用途
JP2007035705A (ja) * 2005-07-22 2007-02-08 Jsr Corp 表面疎水化方法、表面疎水化用組成物、ならびに半導体装置およびその製造方法
JP2007053300A (ja) * 2005-08-19 2007-03-01 Fujitsu Ltd シリカ系被膜の製造方法、シリカ系被膜および半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770572B1 (en) 1999-01-26 2004-08-03 Alliedsignal Inc. Use of multifunctional si-based oligomer/polymer for the surface modification of nanoporous silica films
US6743643B2 (en) * 2001-11-29 2004-06-01 Symetrix Corporation Stacked memory cell having diffusion barriers
TWI273090B (en) * 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267946A (ja) 1993-03-16 1994-09-22 Kawasaki Steel Corp 金属膜の選択形成方法
JP2004511896A (ja) 2000-06-23 2004-04-15 ハネウェル・インターナショナル・インコーポレーテッド 誘電フィルム及び材料における疎水性を回復する方法
JP2004292304A (ja) 2002-09-09 2004-10-21 Mitsui Chemicals Inc 多孔質フィルムの改質方法、改質された多孔質フィルム及びその用途
JP2007035705A (ja) * 2005-07-22 2007-02-08 Jsr Corp 表面疎水化方法、表面疎水化用組成物、ならびに半導体装置およびその製造方法
JP2007053300A (ja) * 2005-08-19 2007-03-01 Fujitsu Ltd シリカ系被膜の製造方法、シリカ系被膜および半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2124249A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013103962A (ja) * 2011-11-11 2013-05-30 Central Glass Co Ltd 窒化ケイ素含有ウェハ用の表面処理剤、表面処理液、及び表面処理方法
EP4361201A4 (en) * 2021-06-23 2025-06-18 Toray Fine Chemicals Co., Ltd. PROCESS FOR PRODUCING SILICONE POLYMER

Also Published As

Publication number Publication date
CN101647106B (zh) 2011-10-05
EP2124249A1 (en) 2009-11-25
JP5131267B2 (ja) 2013-01-30
US20090309196A1 (en) 2009-12-17
KR101132095B1 (ko) 2012-04-04
EP2124249B1 (en) 2015-03-04
JPWO2008111134A1 (ja) 2010-06-24
US8089138B2 (en) 2012-01-03
KR20100005022A (ko) 2010-01-13
EP2124249A4 (en) 2010-12-29
CN101647106A (zh) 2010-02-10

Similar Documents

Publication Publication Date Title
ATE439683T1 (de) Schaltungsanordnung mit verbindungseinrichtung sowie herstellungsverfahren hierzu
GB2472953A (en) Circuit module and method of manufacturing the same
TW200802653A (en) Semiconductor apparatus and method of producing the same
WO2008111134A1 (ja) 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法
WO2013085839A3 (en) Semiconductor modules and methods of forming the same
WO2008099863A1 (ja) 半導体，半導体装置及び相補型トランジスタ回路装置
WO2008081824A1 (ja) 半導体装置およびその製造方法
WO2010124301A3 (en) Methods and devices for an electrically non-resistive layer formed from an electrically insulating material
TW201130100A (en) Semiconductor device having a copper plug
TW200739817A (en) Semiconductor device and a method of increasing a resistance value of an electric fuse
WO2011097089A3 (en) Recessed semiconductor substrates
WO2009057419A1 (ja) 回路形成方法
WO2012148644A3 (en) Conductive polymer fuse
EP4535937A3 (en) Component carrier with electronic components and thermally conductive blocks on both sides
WO2011151098A3 (de) Bauelement mit einer durchkontaktierung und verfahren zu dessen herstellung
ATE476775T1 (de) Vorrichtung zur elektrischen feldsteuerung
WO2007004115A3 (en) Organic electronic device and method for manufacture thereof
WO2008051369A3 (en) Low-cost electrostatic clamp with fast declamp time and the manufacture
TW200605354A (en) Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations
GB201202436D0 (en) Early entry
WO2011050043A3 (en) Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method
TW200631059A (en) Semiconducor device and manufacturing method thereof
TW200603366A (en) Model-based insertion of irregular dummy features
GB201020049D0 (en) Electronic devices
GB2466163A (en) Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780052178.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07736885

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009503777

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2007736885

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020097019185

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE