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WO2008078771A1 - 太陽電池素子及び太陽電池素子の製造方法 - Google Patents

太陽電池素子及び太陽電池素子の製造方法 Download PDF

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Publication number
WO2008078771A1
WO2008078771A1 PCT/JP2007/074944 JP2007074944W WO2008078771A1 WO 2008078771 A1 WO2008078771 A1 WO 2008078771A1 JP 2007074944 W JP2007074944 W JP 2007074944W WO 2008078771 A1 WO2008078771 A1 WO 2008078771A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
cell element
main electrode
semiconductor substrate
electrode section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074944
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English (en)
French (fr)
Inventor
Tomonari Sakamoto
Naoya Kobamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to US12/521,551 priority Critical patent/US9093590B2/en
Priority to EP20070860173 priority patent/EP2104147B1/en
Priority to JP2008551133A priority patent/JP5091161B2/ja
Publication of WO2008078771A1 publication Critical patent/WO2008078771A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

　簡易な構成で且つ高効率な太陽電池素子及びその製造方法を提供する。本発明の太陽電池素子は、太陽光を受光する第一の面と、第一の面の裏側の第二の面とを含み、第一の面と第二の面との間を貫通する貫通孔を有する半導体基板と、ガラス成分を含んでおり半導体基板の第一の面上に形成された主電極部と、主電極部と電気的に接続されるとともに半導体基板の貫通孔内に形成されており、主電極部よりもガラス成分の含有比率が小さい導通部と、を含む第一電極とを有する。
PCT/JP2007/074944 2006-12-26 2007-12-26 太陽電池素子及び太陽電池素子の製造方法 Ceased WO2008078771A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/521,551 US9093590B2 (en) 2006-12-26 2007-12-26 Solar cell and solar cell manufacturing method
EP20070860173 EP2104147B1 (en) 2006-12-26 2007-12-26 Solar cell element and solar cell element manufacturing method
JP2008551133A JP5091161B2 (ja) 2006-12-26 2007-12-26 太陽電池素子及び太陽電池素子の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006349047 2006-12-26
JP2006-349047 2006-12-26
JP2007-281349 2007-10-30
JP2007281349 2007-10-30

Publications (1)

Publication Number Publication Date
WO2008078771A1 true WO2008078771A1 (ja) 2008-07-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074944 Ceased WO2008078771A1 (ja) 2006-12-26 2007-12-26 太陽電池素子及び太陽電池素子の製造方法

Country Status (4)

Country Link
US (1) US9093590B2 (ja)
EP (1) EP2104147B1 (ja)
JP (1) JP5091161B2 (ja)
WO (1) WO2008078771A1 (ja)

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JP2008270743A (ja) * 2007-03-29 2008-11-06 Kyocera Corp 太陽電池モジュール
JP2010080576A (ja) * 2008-09-25 2010-04-08 Sharp Corp 光電変換素子およびその製造方法
WO2010110510A1 (en) 2009-03-25 2010-09-30 Lg Electronics Inc. Solar cell and fabrication method thereof
US20100307582A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
WO2011037261A1 (ja) * 2009-09-28 2011-03-31 京セラ株式会社 太陽電池素子及びその製造方法
WO2011129368A1 (ja) * 2010-04-13 2011-10-20 京セラ株式会社 太陽電池素子およびその製造方法
EP2433305A1 (en) * 2009-05-20 2012-03-28 E. I. du Pont de Nemours and Company Process of forming a grid electrode on the front-side of a silicon wafer
EP2433306A1 (en) * 2009-05-20 2012-03-28 E. I. du Pont de Nemours and Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102428567A (zh) * 2009-05-20 2012-04-25 E.I.内穆尔杜邦公司 在硅片正面上形成栅极的方法
KR20120039834A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양전지 모듈
EP2320477A4 (en) * 2008-08-22 2012-08-08 Sanyo Electric Co SOLAR CELL MODULE, SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL MODULE
EP2290705A3 (en) * 2009-08-27 2013-02-20 Lg Electronics Inc. Solar cell and fabricating method thereof
EP2404328A4 (en) * 2009-03-02 2013-08-14 Lg Electronics Inc SOLAR CELL AND MANUFACTURING METHOD THEREFOR
JP2013533188A (ja) * 2010-05-04 2013-08-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 鉛およびテルル酸化物を含有する厚膜ペーストと半導体デバイスの製造においてのそれらの使用
EP2371009A4 (en) * 2009-06-04 2013-10-02 Lg Electronics Inc SOLAR CELL AND MANUFACTURING METHOD THEREFOR
US9490375B2 (en) 2011-04-04 2016-11-08 Mitsubishi Electric Corporation Solar cell and method for manufacturing the same, and solar cell module
EP2426727A4 (en) * 2009-04-27 2017-07-05 Kyocera Corporation Solar battery device, and solar battery module using the same
WO2018180227A1 (ja) * 2017-03-31 2018-10-04 パナソニック株式会社 太陽電池セル
CN111987171A (zh) * 2020-09-03 2020-11-24 江苏日托光伏科技股份有限公司 一种mwt电池片及其丝网印刷方法
US12507502B2 (en) 2024-02-06 2025-12-23 Zhejiang Jinko Solar Co., Ltd. Solar cell and method for preparing the same, tandem solar cell, and photovoltaic module

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KR20130136501A (ko) * 2010-12-08 2013-12-12 쓰리엠 이노베이티브 프로퍼티즈 컴파니 유리형 중합체 반사방지 필름, 이를 제조하는 방법 및 이를 사용하는 광 흡수 장치
KR20120091629A (ko) * 2011-02-09 2012-08-20 엘지전자 주식회사 태양전지
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
DE102011051511A1 (de) * 2011-05-17 2012-11-22 Schott Solar Ag Rückkontaktsolarzelle und Verfahren zum Herstellen einer solchen
US8916410B2 (en) * 2011-05-27 2014-12-23 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
KR20140063716A (ko) * 2011-08-26 2014-05-27 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 SiNx 및 더 양호한 BSF 형성을 위한 파이어 스루 알루미늄 페이스트
DE102011053085A1 (de) * 2011-08-29 2013-02-28 Schott Solar Ag Verfahren zur Herstellung einer Solarzelle
CN102361040A (zh) * 2011-11-08 2012-02-22 天威新能源控股有限公司 一种太阳能电池及其制备方法
US20130146136A1 (en) * 2011-12-13 2013-06-13 Kyoung-Jin Seo Photovoltaic device and method of manufacturing the same
NL2008970C2 (en) 2012-06-08 2013-12-10 Tempress Ip B V Method of manufacturing a solar cell and solar cell thus obtained.
CN102820375B (zh) * 2012-08-14 2015-03-11 苏州阿特斯阳光电力科技有限公司 一种背接触太阳能电池的制备方法
CN104362192A (zh) * 2014-10-23 2015-02-18 天威新能源控股有限公司 一种金属环绕背接触电池及其制备方法和封装方法
DE102016105045A1 (de) * 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Strahlungsdetektor
KR20180000498A (ko) * 2016-06-23 2018-01-03 현대중공업그린에너지 주식회사 Perl 태양전지 및 그 제조방법
TWI745562B (zh) 2017-04-18 2021-11-11 美商太陽帕斯特有限責任公司 導電糊料組成物及用其製成的半導體裝置
KR102658460B1 (ko) * 2018-11-09 2024-04-18 삼성전자주식회사 마이크로 led 소자의 실장 구조
JP7206489B2 (ja) * 2019-03-07 2023-01-18 ミツミ電機株式会社 光学モジュール及び光学式エンコーダ
US12400891B2 (en) 2019-03-19 2025-08-26 Applied Materials Italia S.R.L. Deposition apparatus, method of deposition on a substrate, substrate structure and substrate support
KR102483918B1 (ko) * 2020-08-26 2022-12-30 성균관대학교산학협력단 개구부를 포함하는 양면 수광형 실리콘 탠덤형 태양 전지의 제조 방법
CN113035998A (zh) * 2021-02-08 2021-06-25 江苏日托光伏科技股份有限公司 一种mwt电池正负电极点丝网印刷方式
CN120500151B (zh) * 2024-11-19 2026-01-06 西安隆基乐叶光伏科技有限公司 太阳能电池和光伏组件

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Cited By (37)

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JP2008270743A (ja) * 2007-03-29 2008-11-06 Kyocera Corp 太陽電池モジュール
EP2320477A4 (en) * 2008-08-22 2012-08-08 Sanyo Electric Co SOLAR CELL MODULE, SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL MODULE
US9252299B2 (en) 2008-08-22 2016-02-02 Panasonic Intellectual Property Management Co., Ltd. Solar cell module, solar cell and solar cell module manufacturing method
JP2010080576A (ja) * 2008-09-25 2010-04-08 Sharp Corp 光電変換素子およびその製造方法
KR101573934B1 (ko) * 2009-03-02 2015-12-11 엘지전자 주식회사 태양 전지 및 그 제조 방법
US8569614B2 (en) 2009-03-02 2013-10-29 Lg Electronics Inc. Solar cell and method of manufacturing the same
EP2404328A4 (en) * 2009-03-02 2013-08-14 Lg Electronics Inc SOLAR CELL AND MANUFACTURING METHOD THEREFOR
WO2010110510A1 (en) 2009-03-25 2010-09-30 Lg Electronics Inc. Solar cell and fabrication method thereof
KR20100107258A (ko) * 2009-03-25 2010-10-05 엘지전자 주식회사 태양전지 및 그 제조방법
EP2412034A4 (en) * 2009-03-25 2016-11-09 Lg Electronics Inc SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF
KR101627217B1 (ko) * 2009-03-25 2016-06-03 엘지전자 주식회사 태양전지 및 그 제조방법
EP2426727A4 (en) * 2009-04-27 2017-07-05 Kyocera Corporation Solar battery device, and solar battery module using the same
CN102428567A (zh) * 2009-05-20 2012-04-25 E.I.内穆尔杜邦公司 在硅片正面上形成栅极的方法
US9054239B2 (en) 2009-05-20 2015-06-09 E I Du Pont De Nemours And Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102428567B (zh) * 2009-05-20 2015-01-07 E.I.内穆尔杜邦公司 在硅片正面上形成栅极的方法
EP2433306A1 (en) * 2009-05-20 2012-03-28 E. I. du Pont de Nemours and Company Process of forming a grid electrode on the front-side of a silicon wafer
EP2433305A1 (en) * 2009-05-20 2012-03-28 E. I. du Pont de Nemours and Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102428566A (zh) * 2009-05-20 2012-04-25 E.I.内穆尔杜邦公司 在硅片正面上形成栅极的方法
US8680392B2 (en) 2009-06-04 2014-03-25 Lg Electronics Inc. Solar cell and method of manufacturing the same
EP2371009A4 (en) * 2009-06-04 2013-10-02 Lg Electronics Inc SOLAR CELL AND MANUFACTURING METHOD THEREFOR
US20100307582A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US8912035B2 (en) 2009-08-27 2014-12-16 Lg Electronics Inc. Solar cell and fabricating method thereof
EP2290705A3 (en) * 2009-08-27 2013-02-20 Lg Electronics Inc. Solar cell and fabricating method thereof
WO2011037261A1 (ja) * 2009-09-28 2011-03-31 京セラ株式会社 太陽電池素子及びその製造方法
JP5073103B2 (ja) * 2009-09-28 2012-11-14 京セラ株式会社 太陽電池素子及びその製造方法
CN102484151A (zh) * 2009-09-28 2012-05-30 京瓷株式会社 太阳能电池元件及其制造方法
US9171975B2 (en) 2010-04-13 2015-10-27 Kyocera Corporation Solar cell element and process for production thereof
JP5460860B2 (ja) * 2010-04-13 2014-04-02 京セラ株式会社 太陽電池素子およびその製造方法
WO2011129368A1 (ja) * 2010-04-13 2011-10-20 京セラ株式会社 太陽電池素子およびその製造方法
JP2013533188A (ja) * 2010-05-04 2013-08-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 鉛およびテルル酸化物を含有する厚膜ペーストと半導体デバイスの製造においてのそれらの使用
KR101692560B1 (ko) * 2010-10-18 2017-01-03 엘지전자 주식회사 태양전지 모듈
KR20120039834A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양전지 모듈
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JPWO2018180227A1 (ja) * 2017-03-31 2019-11-07 パナソニック株式会社 太陽電池セル
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US9093590B2 (en) 2015-07-28

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