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WO2004075305A1 - Dispositif a semiconducteur pourvu d'une encapsulation composee d'un materiau elastique - Google Patents

Dispositif a semiconducteur pourvu d'une encapsulation composee d'un materiau elastique Download PDF

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Publication number
WO2004075305A1
WO2004075305A1 PCT/EP2003/013180 EP0313180W WO2004075305A1 WO 2004075305 A1 WO2004075305 A1 WO 2004075305A1 EP 0313180 W EP0313180 W EP 0313180W WO 2004075305 A1 WO2004075305 A1 WO 2004075305A1
Authority
WO
WIPO (PCT)
Prior art keywords
encapsulation
semiconductor component
chip
component according
elastic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2003/013180
Other languages
German (de)
English (en)
Inventor
Peter MÜHLECK
Jürgen Riedel
Bernd Gebhard
Heinz Nather
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Semiconductor GmbH
Original Assignee
Vishay Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor GmbH filed Critical Vishay Semiconductor GmbH
Priority to AU2003292093A priority Critical patent/AU2003292093A1/en
Publication of WO2004075305A1 publication Critical patent/WO2004075305A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H10W74/47—
    • H10W90/756—

Definitions

  • the invention relates to a semiconductor component with a semiconductor chip and an encapsulation to protect the chip from damage.
  • encapsulation is intended on the one hand to protect the semiconductor chip from mechanical damage.
  • the encapsulation is intended to protect the chip from moisture and harmful substances from the environment, in particular from the surrounding air, so that these substances do not undesirably diffuse into the semiconductor layers of the chip.
  • known chips are housed, for example, with epoxy resins.
  • such encapsulations can also have adverse effects.
  • such encapsulations can exert an undesirably high mechanical pressure on the semiconductor chip in certain temperature ranges, or the encapsulations themselves tend to crack at extreme temperatures, so that the protective function explained can no longer be fully performed. This can lead to degradation or complete failure of the component.
  • This object is achieved by a semiconductor component with the features according to claim 1, and in particular in that the encapsulation is made of an elastic material.
  • all or at least some outermost housing walls are made of a soft, dimensionally stable material.
  • the inside of this encapsulation can rest directly on the chip or on an oxide layer formed thereon.
  • an elastic material ensures, on the one hand, that the encapsulation can follow possible changes in the chip geometry at extreme temperatures or extreme temperature changes, without exerting mechanical stress on the chip or being damaged due to the deformation itself. Strong sudden changes in temperature (temperature shocks) also prove to be harmless. On the other hand, a certain elasticity of the encapsulation remains guaranteed even in extreme temperature ranges, so that the encapsulation can still effectively protect the chip against mechanical damage even at these extreme temperatures.
  • extreme temperatures are understood to be temperatures down to -40 ° C. and even -65 ° C. on the one hand and up to + 140 ° C. and even + 150 ° C. on the other.
  • the semiconductor component according to the invention is also distinguished by better cyclical strength, that is to say by better stability with respect to regular temperature fluctuations.
  • the mechanical stress on the chip is significantly reduced compared to conventional housings, so that there is in particular no unwanted shearing off of bond wires. Furthermore, an undesired detachment of the encapsulation from the chip (delamination) is avoided.
  • a particular advantage is that the encapsulation can continue to be manufactured in the course of a conventional manufacturing process, so that inexpensive manufacture is possible.
  • standard processes such as casting, injection molding (molding) or immersion processes can be used, as described for example for a light-emitting diode strip in DE 43 40 864 AI.
  • a particular advantage for optoelectronic semiconductor components is that the encapsulation retains its optical parameters even in the case of extreme temperatures or extreme temperature fluctuations due to the elastic design. In particular, there is no change in the wavelength dependence of the transmission behavior due to a mechanical pressure when there is a change in temperature.
  • the encapsulation is made from solid silicone, in particular from a silicone rubber.
  • silicone By using silicone, the encapsulation can be made so elastic that there is no mechanical stress on the packaged chip even at extreme temperatures and the chip remains protected from external damage. Silicone does not tend to crack easily even at extreme temperatures.
  • silicone offers sufficient protection against moisture or the diffusion of undesirable substances and can be brought into direct contact with a semiconductor chip without any problem, since it is of the usual purity itself does not contain any harmful substances. At the same time, silicone is easy to process and can therefore be easily integrated into conventional manufacturing processes.
  • all elastomers are basically suitable for use as elastic encapsulation materials, in particular rubber, synthetic rubber, silicone rubber or thermoplastically processable elastomers.
  • the elastic encapsulation can simultaneously serve as a light guide or even as a beam-shaping light guide.
  • the encapsulation can simultaneously form the transmission optics of a light-emitting diode or the reception optics of a photodiode.
  • the encapsulation material is transparent for the wavelength range in question. This is particularly easy to do with silicone.
  • the semiconductor component can also have an IC chip (Integrated Circuit) with a plurality of integrated circuits.
  • IC chip Integrated Circuit
  • the elastic encapsulation material is between 1 and 500 N / mm 2 . Such elasticity ensures that the chip does not experience any severe mechanical stress, even at extreme temperatures and severe deformations.
  • Fig. 1 is a perspective view of a light emitting diode
  • FIG. 2 is a perspective view of an IC device.
  • FIG. 1 shows a light-emitting diode in which a cuboidal encapsulation 11 made of transparent silicone also serves as a light guide for the emitted light.
  • connection legs 13, 15 protrude from the encapsulation 11.
  • the actual light-emitting diode chip 19 is arranged within a reflector recess 17 of the connection leg 13. This is connected to the other connection leg 15 via a bonding wire 21.
  • the light-emitting diode shown in FIG. 1 is used to generate light in a manner known per se.
  • the light emitted by the diode chip 19 is guided by the encapsulation material to an outside, in particular to the front facing upwards in FIG. 1.
  • the use of elastic silicone for the encapsulation 11 has the advantage that the encapsulation 11 does not exert any mechanical stress on the diode chip 19 even at extreme temperatures.
  • the encapsulation 11 can also protect the diode chip 19 better against certain, in particular blunt, mechanical influences than a conventional housing made of epoxy resin.
  • the diode chip 19 can also be attached to the connecting pin 13 within the reflector recess 17 at certain points or over a wide area by means of a non-elastic material. However, this is not mandatory.
  • FIG. 2 shows an IC chip 31 with, for example, eight connection pins 33, four of which can be seen in FIG. 2.
  • the IC chip 31 is hermetically encased by a cuboid encapsulation 35, with only the connecting legs 33 protruding from the encapsulation 35.
  • the encapsulation 35 thus forms the only and outermost outer shell of the component shown, and it lies on the inside directly against the IC chip 31. Since this is not an optical component, the encapsulation 35 does not necessarily have to be transparent.
  • the encapsulation 35 consists of an elastic material, in particular of silicone rubber or another elastomer. This ensures that the encapsulation 35 does not exert any mechanical stress on the IC chip 31 due to temperature-related changes in geometry, even at extreme temperatures. As a result, the IC chip 31 can also be used at extreme temperatures and is thereby protected from external damage by the encapsulation 35. LIST OF REFERENCE NUMBERS

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif à semiconducteur comportant une microplaquette semiconductrice et une encapsulation destinée à protéger la microplaquette contre toute détérioration. Cette encapsulation est fabriquée à partir d'un matériau élastique, par exemple de la silicone.
PCT/EP2003/013180 2003-02-24 2003-11-24 Dispositif a semiconducteur pourvu d'une encapsulation composee d'un materiau elastique Ceased WO2004075305A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003292093A AU2003292093A1 (en) 2003-02-24 2003-11-24 Semi-conductor component with an encapsulation made of elastic material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10307800A DE10307800A1 (de) 2003-02-24 2003-02-24 Halbleiterbauteil
DE10307800.2 2003-02-24

Publications (1)

Publication Number Publication Date
WO2004075305A1 true WO2004075305A1 (fr) 2004-09-02

Family

ID=32797699

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/013180 Ceased WO2004075305A1 (fr) 2003-02-24 2003-11-24 Dispositif a semiconducteur pourvu d'une encapsulation composee d'un materiau elastique

Country Status (3)

Country Link
AU (1) AU2003292093A1 (fr)
DE (1) DE10307800A1 (fr)
WO (1) WO2004075305A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006023593A1 (de) * 2006-05-19 2007-11-22 Valeo Schalter Und Sensoren Gmbh Lichtleitelement
DE102008012844A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung sowie Verfahren zur Herstellung einer Beleuchtungseinrichtung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3820237A (en) * 1971-05-17 1974-06-28 Northern Electric Co Process for packaging light emitting devices
DE3019239A1 (de) * 1980-05-20 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Umhuellung fuer halbleiterbauelement
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device
US5313365A (en) * 1992-06-30 1994-05-17 Motorola, Inc. Encapsulated electronic package
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
US20020089052A1 (en) * 2001-01-10 2002-07-11 Masashi Yamaura Semiconductor device and a method of manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3323259A1 (de) * 1983-06-28 1985-01-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer zum umhuellen von optoelektronischen bauelementen geeigneten pressmasse
DE19535777A1 (de) * 1995-09-26 1997-03-27 Siemens Ag Optoelektronisches Halbleiter-Bauelement und Verfahren zur Herstellung
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
JP2002314139A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3820237A (en) * 1971-05-17 1974-06-28 Northern Electric Co Process for packaging light emitting devices
DE3019239A1 (de) * 1980-05-20 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Umhuellung fuer halbleiterbauelement
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device
US5313365A (en) * 1992-06-30 1994-05-17 Motorola, Inc. Encapsulated electronic package
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
US20010010371A1 (en) * 1998-11-06 2001-08-02 Carey Julian A. High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
US20020089052A1 (en) * 2001-01-10 2002-07-11 Masashi Yamaura Semiconductor device and a method of manufacturing the same

Also Published As

Publication number Publication date
DE10307800A1 (de) 2004-09-02
AU2003292093A1 (en) 2004-09-09

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