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WO2004044966A1 - Procédé et dispositif d'alignement à exposition en proximité - Google Patents

Procédé et dispositif d'alignement à exposition en proximité Download PDF

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Publication number
WO2004044966A1
WO2004044966A1 PCT/JP2003/012377 JP0312377W WO2004044966A1 WO 2004044966 A1 WO2004044966 A1 WO 2004044966A1 JP 0312377 W JP0312377 W JP 0312377W WO 2004044966 A1 WO2004044966 A1 WO 2004044966A1
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WO
WIPO (PCT)
Prior art keywords
mark
mask
alignment
reference mark
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/012377
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English (en)
Japanese (ja)
Inventor
Tsutomu Miyatake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to AU2003266662A priority Critical patent/AU2003266662A1/en
Priority to JP2004551188A priority patent/JP4497364B2/ja
Publication of WO2004044966A1 publication Critical patent/WO2004044966A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer

Definitions

  • the present invention relates to a positioning technique in proximity exposure, and particularly to a positioning technique applicable to proximity exposure using an electron beam or X-ray.
  • a mask pattern formed on a bright mask is transferred to a resist layer on a wafer using electron beams or X-rays
  • 1: 1 proximity exposure is used.
  • the mask is created by forming a mask pattern such as a metal film for shielding X-rays on a mask membrane such as a SiC film or a SiN film that can transmit X-rays.
  • a mask having such a mask pattern is referred to as a membrane type.
  • the mask can also be manufactured by forming an opening through which an electron beam can pass through a mask membrane such as a thin S-iC film or a SiN film that shields an electron beam to form a mask pattern.
  • a mask membrane such as a thin S-iC film or a SiN film that shields an electron beam to form a mask pattern.
  • a mask having such a mask pattern is called a stencil type.
  • the mask membrane is formed on a supporting substrate such as a silicon wafer, and the supporting substrate is removed in the mask region.
  • the area, thickness, strength, etc. of the master membrane are designed to enable efficient exposure and hold the mask pattern with high accuracy.
  • the mask membrane does not always have a sufficiently high light transmittance.
  • the light transmittance of the membrane decreases as the thickness increases.
  • a membrane is formed of a SiC film, it becomes opaque to light when the thickness is about 10 m.
  • FIGS. 12A to 12C are diagrams for explaining the alignment between the mask and the wafer by the edge scattered light according to the conventional technique. Since the silicon wafer does not transmit light, the detection light irradiates the wafer mark from above the wafer and detects reflected light, scattered light or diffracted light above the wafer. The wafer mark is detected via a mask membrane holding an exposure mask.
  • the edge scattered light E1 from the wafer mark WM is detected through the mask membrane Ml.
  • the mask membrane is formed of a film that transmits electron beams and X-rays, the transmittance for detection light is not always high. Therefore, the detection light is affected by the mask membrane Ml. If the mask membrane Ml does not transmit light, the edge scattered light E 2 from the wafer mark WM cannot be detected.
  • the wafer mark WM cannot be arranged near the center of the exposure area E.
  • the area where the wafer mark WM is arranged is limited to the periphery of the exposure area E.
  • the substrate B for holding the mask membrane Ml interferes with the detection light, and a mask mark cannot be arranged in a region near the substrate B on the master membrane Ml.
  • One object of the present invention can be applied to a transfer method for transferring a pattern on a first object, for example, a mask, onto a second object, for example, a wafer, wherein the first object and the second object
  • An object of the present invention is to provide a positioning method and a positioning device which can easily perform positioning with an object.
  • Another object of the present invention can be applied to a transfer method for transferring a pattern on a first object, for example, a mask, onto a second object, for example, a wafer, wherein the first object and the second object are
  • An object of the present invention is to provide a novel method and apparatus for performing alignment with an object.
  • a first object is placed in close proximity to a second object, 2.
  • a positioning method applied to a transfer method of transferring a pattern on an object onto a first object comprising: (a) providing a mark supporting portion having at least a part in which a light transmitting region is defined; Arranging, on a first stage, a first reference mask having a first reference mark formed thereon and a first object having a first alignment mark formed thereon, (b) the first stage Using a first alignment sensor disposed at a second stage, the second stage is provided to face the first stage through a light transmitting region defined by the mark support.
  • an alignment method including a step of simultaneously detecting a second alignment mark formed on a second object to be arranged and the first reference mark.
  • the relative positional relationship between the second object and the first reference mark By detecting the first reference mark and the second alignment mark at the same time, it is possible to know the relative positional relationship between the second object and the first reference mark. Since the first reference mask on which the first reference mark is formed and the first object are both arranged on the first stage, the relative positions of the two can be measured. If the relative position between the first reference mark and the first object is known, the relative positional relationship between the first object and the second object can be known. Since the second alignment mark is observed through the light transmitting region of the first reference mask, its position can be easily detected.
  • the above-described alignment method can be performed using the following apparatus.
  • a position used for proximity exposure in which a first object is arranged close to a second object, and a pattern on the second object is transferred to the first object A combining device, comprising: a first stage for holding and moving a first object having a first alignment mark formed thereon; and a second alignment mark opposed to the first stage.
  • a first reference mask having a first reference mark formed on the mark support, and a first reference mask disposed on the first stage, wherein the first reference mask passes through a region defined by the mark support that transmits light. 2 can be detected and the first reference mark can be detected.
  • First Align device having a ⁇ Lai instrument sensor is provided which can detect. 4. Brief description of drawings
  • FIG. 1A is a cross-sectional view showing an alignment device according to a first embodiment of the present invention
  • FIGS. 1B and 1C are a bottom view and a cross-sectional view of a reference mark according to one configuration example, respectively
  • 1D and 1E are a bottom view and a cross-sectional view of a reference mark according to another configuration example, respectively.
  • FIG. 2A is a cross-sectional view of a membrane type mask
  • FIG. 2B is a cross-sectional view of a stainless steel type mask
  • FIG. 2C is a cross-sectional view of a wafer
  • FIG. 2D is a cross-sectional view showing a configuration in which a mask mark and a stencil-type reference mark are detected by a chromatic aberration double focus optical system
  • FIG. 2E is a cross-sectional view showing a configuration in which a mask mark and a membrane-type reference mark are detected by an edge scattered light oblique detection system.
  • 3A to 3D are cross-sectional views illustrating a positioning method using the positioning device of the first embodiment.
  • FIG. 4A is a cross-sectional view showing a positioning device according to a second embodiment of the present invention
  • FIGS. 4B and 4C are plan views of a reference mark and a wafer mark.
  • 5A to 5D are cross-sectional views illustrating a positioning method using the positioning device according to the second embodiment.
  • 6A to 6D are cross-sectional views illustrating a positioning method using the positioning device according to the second embodiment.
  • FIG. 7A is a cross-sectional view illustrating a positioning device according to a third embodiment of the present invention
  • FIG. 7B is a plan view of a reference mark and a wafer mark.
  • FIGS. 8A to 8D are cross-sectional views illustrating a positioning method using the positioning device according to the third embodiment.
  • 9A to 9D are cross-sectional views illustrating a positioning method using the positioning device according to the third embodiment.
  • FIGS. 10A and 10B are cross-sectional views showing a modification of the above embodiment
  • FIGS. 10C and 1OD are a plan view and a cross-sectional view showing a height adjusting mechanism of a reference mask, respectively. Confuse.
  • FIG. 11A and FIG. 11B are a perspective view and a sectional view, respectively, of a main part of the mask.
  • FIG. 11C and FIG. 1 ID are cross-sectional views of main parts of the reference mask.
  • FIGS. 122 to 12C are diagrams for explaining a conventional technique.
  • FIG. 13 is a cross-sectional view of a main part of the positioning device according to the fourth embodiment.
  • FIGS. 14 to 14C are cross-sectional views illustrating a method for performing alignment using the alignment apparatus according to the fourth embodiment.
  • FIG. 15 is a cross-sectional view of a main part of the positioning device according to the fifth embodiment.
  • FIG. 16 is a plan view of a mask used in the alignment device according to the fifth embodiment.
  • FIG. 17 is a sectional view of a main part of an alignment device according to a sixth embodiment.
  • FIG. 18A is a plan view of a mask used in the alignment device according to the sixth embodiment, and
  • FIG. 18B is a plan view of a reference mark portion.
  • FIG. 19A is a plan view of a mask having another configuration used in the alignment device according to the sixth embodiment
  • FIG. 19B is a plan view of a reference mark portion.
  • FIGS. 20A and 20B are bottom views of the wafer-side reference mask of the alignment apparatus according to the sixth embodiment.
  • FIGS. 21A and 21B are a plan view and a cross-sectional view, respectively, of a main part of an alignment device according to a seventh embodiment.
  • FIGS. 22A to 22D are cross-sectional views illustrating a method for performing alignment using the alignment apparatus according to the seventh embodiment.
  • 1A to 3D show an alignment method and an alignment device according to a first embodiment of the present invention.
  • the mask stage 11 has an exposure opening E through which an electron beam or an X-ray is transmitted.
  • a mask M having an exposure pattern is held on a surface of the mask stage 11 including the exposure opening E.
  • the mask M further has a mask mark MM in the exposure area.
  • the mask stage 11 further holds a wafer alignment sensor WS.
  • Wafer stage 12 includes, for example, coarse movement stage 13 and fine movement stage 14. On coarse movement stage 13, a heavy mask alignment sensor MS is arranged. On the fine movement stage 14, a wafer W on which an exposure resist layer is formed is arranged, and a small and lightweight reference mask R is arranged. The wafer W has a wafer mark WM, and the reference mask R has a reference mark RM on a light-transmissive mark support.
  • the mask M and the wafer W are opposed to each other with an interval of several tens of microns or less.
  • the mask alignment sensor MS has a function of simultaneously detecting the reference mark RM of the reference mask R and the mask mark MM on the mask M.
  • the wafer alignment sensor WS has a function of detecting the wafer mark WM of the wafer W placed on the wafer stage 12 and detecting the reference mark RM formed on the mark support portion of the reference mask R.
  • FIGS. 1B and 1C are a bottom view and a cross-sectional view illustrating one configuration example of the reference mask R.
  • a light-transmitting membrane 16 (reference mask membrane, mark support) formed of a silicon nitride film, a silicon carbide film, or the like is formed on a support 15 formed of a silicon substrate.
  • An opening 17 is formed in a predetermined area of the reference mask membrane 16 to form a reference mark RMa.
  • the reference mark RMa can be detected by forming an optical image.
  • the dimension X12 of the reference mask is, for example, about 10 mm X 10 mm, and the dimension x11 of the opening of the support substrate 15 is, for example, 3 mm X 3 mm.
  • FIG. 1D and 1E show other examples of the configuration of the reference mask.
  • a reference mask membrane 16 is formed on a supporting substrate 15 such as a silicon substrate, and an X-ray absorber pattern (or opaque pattern) 18 is formed thereon.
  • X-ray absorber pattern (or opaque pattern) 18 constitutes reference mark RMb
  • Reference mark RMb reflects the reference mark detection detection light or its edge is the reference mark detection detection It has the function of scattering light. Form an optical image of reflected or scattered light By doing so, the reference mark can be detected. When detecting edge scattered light, the direction of illumination light of the reference mark and the measurement direction of edge scattered light can be selected to be asymmetrical.
  • the pattern of the X-ray absorber used here is an example, and any pattern that can reflect or scatter the detection light for reference mark detection so that the reference mark RMb can be detected is used.
  • a pattern made of a substance other than the body may be used.
  • the reference mark RM can be detected from the wafer stage 12 ⁇ J (bottom in Fig. 1A) by the mask alignment sensor MS, and from the mask stage 11 side (top in Fig. 1A) by the wafer alignment sensor WS. can do.
  • the mask mark MM is moved downward by the mask alignment sensor MS through the light-transmitting mark support (master membrane) of the reference mask RM, that is, by observing the detection light transmitted through the mark support. Can be detected.
  • the wafer mark WM can be detected from above by the wafer alignment sensor WS.
  • the mark support portion itself may be formed of a material that does not transmit light, and an opening for transmitting light may be formed in a part of the mark support portion.
  • the mask mark MM is detected by the mask alignment sensor MS through an opening formed in the mark support. In either case, the mask mark MM is detected by the mask alignment sensor MS via the reference mask.
  • FIG. 2A shows a configuration example of a membrane type mask.
  • the mask M is formed by forming a mask membrane 22 such as a silicon nitride film or a silicon carbide film on a supporting substrate 21 such as a silicon substrate, and then masking the mask mark 23 (MM) with a shielding material such as a metal and exposing the mask membrane 23.
  • a mask membrane 22 such as a silicon nitride film or a silicon carbide film
  • a supporting substrate 21 such as a silicon substrate
  • a shielding material such as a metal and exposing the mask membrane 23.
  • It has a configuration in which a pattern 24 is formed, and the support substrate 21 below a region where the mark and the pattern are present is removed by etching.
  • the material, thickness and the like of the mask membrane 22 are selected so as to transmit an exposure energy beam such as an X-ray.
  • FIG. 2B shows a configuration example of a stencil type mask.
  • the structure of the supporting substrate 21 and the mask membrane 22
  • FIG. 2C shows a configuration example of the wafer W.
  • Wafer W is a semiconductor substrate such as a silicon substrate
  • a detectable protrusion pattern (or concave pattern) 26 is formed of, for example, a metal film or the like, and constitutes a wafer mark WM.
  • a resist layer 27 is formed so as to cover the wafer mark WM.
  • the wafer W and the mask M are opposed to each other with a gap of several tens of microns or less. It is desired that the mask alignment sensor MS simultaneously detects the reference mark RM of the reference mask R placed on the same fine movement stage as the wafer W and the mask mark MM on the mask M.
  • FIG. 2D shows a chromatic aberration bifocal optical system in which the mask mark MM formed on the mask membrane 22 of the mask M and the stencil-type reference mark RMa formed on the reference membrane 16 of the reference mask are used.
  • the configuration to detect at 28 is shown.
  • the chromatic aberration double focal point optical system 28 has different focal lengths f ( ⁇ ) depending on the wavelength of light, and exhibits two focal lengths for illumination light of two wavelengths.
  • a mask mark MM on the mask membrane 22 and a reference mark RMa on the reference mask membrane 16 are arranged at different positions.
  • the image of the mask mark MM and the reference mark RMa is formed on the same image plane 29 by the chromatic aberration bifocal optical system 28.
  • FIG. 2E schematically shows a configuration in a case where the mask alignment sensor MS is an edge scattered light oblique detection system.
  • the point that the mask mark MM is formed on the master membrane 22 is the same as in FIG. 2D, but in FIG. 2E, the reference mark RM b of the membrane type is formed on the reference mask membrane 16 .
  • the optical axis of the edge scattering light oblique detection system 31 is arranged obliquely with respect to the normal line of the mask M and the reference mask R.
  • Edge scattered light oblique detection system 31 The relative position between mask mark MM and reference mark RM b is detected in the direction perpendicular to the virtual plane including the optical axis of 1 and the normal to mask M and reference mask R. Is done.
  • An object plane 32 and an image plane 33 are set in a plane perpendicular to the optical axis of the edge scattered light oblique detection system 31.
  • the mask mark MM and the reference mark RMb arranged near the object plane 32 are imaged on the image plane 33.
  • the detection direction is limited to one direction in the object plane.
  • Edge scattered light oblique detection system The details of the position detection using the method are disclosed in Japanese Patent Application Laid-Open No. H10-2424036.
  • FIGS. 3A to 3D are cross-sectional views showing an alignment method for aligning the mask M and the wafer W using the configuration shown in FIG. 1A.
  • the mask alignment sensor MS aligns the reference mark RM of the reference mask scale with the mask mark MM of the mask M.
  • the position of the mask mark MM (reference mark RM) with respect to the reference point X0 is A1
  • the wafer stage is moved, and the reference mask R is referenced by the wafer alignment sensor WS.
  • Mark RM is detected.
  • the position of the reference mark RM (wafer alignment sensor WS) with respect to the reference position X0 is set to B1.
  • the coarse movement stage 13 is moved, and the wafer alignment sensor WS Detects wafer mark WM.
  • the position of the reference mark RM with respect to the reference position is defined as C1.
  • 3A to 3C show that the reference mark RM and the mask mark MM are simultaneously detected by the mask alignment sensor MS, and the reference mark RM and the wafer mark WM are detected by the wafer alignment sensor WS. .
  • FIG. 3D shows the principle of aligning the wafer W and the mask M based on these results.
  • the difference between the position of the reference mark RM and the position of the mask mark MM is B1-A1.
  • the mask alignment sensor MS simultaneously detects the reference mark RM on the reference mask R and the mask mark MM on the mask M.
  • the reference mask R can be formed to be lightweight and small, and the transmittance of the reference mask membrane can be set high. Therefore, simultaneous detection of the reference mark RM and the mask mark MM is facilitated.
  • the wafer alignment sensor WS directly detects the reference mark RM and the wafer mark WM without passing through the mask M. Therefore, the detection accuracy can be increased. Based on these highly accurate detection processes, it is possible to set the relative position between the wafer W and the mask M with high accuracy.
  • the alignment mark detection method of the mask alignment sensor MS and the wafer alignment sensor WS is the same detection method of detecting edge scattered light, for example. It may be desired to detect the alignment mark by another detection method such as optical image detection using specularly reflected light.
  • 4A to 6D are a cross-sectional view and a plan view illustrating alignment according to the second embodiment of the present invention.
  • two types of wafer alignment sensors WS1 and WS2 are placed on the mask stage 11 and two types of wafer marks WM1 and WM2 are placed on the wafer W for reference.
  • Two types of reference marks RM 1 and RM 2 are formed on the mask R.
  • Two types of sensors and two types of marks enable two types of measurement methods.
  • the two types of measurement methods are, for example, edge scattered light detection and pattern contour detection using specularly reflected light using an optical microscope.
  • FIG. 4B shows a configuration of a mark used for detecting edge scattered light.
  • the first reference mark RM1 and the first wafer mark WM1 are formed of a pattern having an edge that generates edge scattered light, for example, a plurality of rows of isolated patterns arranged in one direction.
  • the dimensions and shape of the first reference mark RM1 and the first wafer mark WM1 are the same.
  • the second reference mark RM2 and the second wafer mark WM2 for detecting the optical image are formed by a pattern suitable for detecting the outline, for example, a plurality of stripe patterns. You.
  • the size and shape of the second reference mark RM2 and the second wafer mark WM2 are the same.
  • FIGS. 5A to 5D show a process of performing the first alignment using the first wafer alignment sensor WS1, the first reference mark RM1, and the first wafer mark WM1.
  • the first alignment mark is provided by the mask alignment sensor MS.
  • the mark RM1 and the mask mark MM are detected simultaneously by edge scattered light and the like.
  • the measurement position at this time is A21. This is the same process as in FIG. 3A.
  • the first reference mark RM1 is detected using the first wafer alignment sensor WS1.
  • the measurement position at this time is B21. This is the same step as FIG. 3B.
  • the first wafer mark WM1 is detected using the first wafer alignment sensor WS1.
  • the measurement position at this time is C21. This is the same step as FIG. 3C.
  • the difference X21 between the position of the first wafer mark WM1 and the position of the mask mark MM is obtained using the results of FIGS. 5A to 5C. This is the same process as in FIG. 3D.
  • the position difference X 21 is
  • X21 B 21-A21- (C 21 -B 21)
  • FIGS. 6A to 6D show a process of performing a second alignment using the second wafer alignment sensor WS2, the second reference mark RM2, and the second wafer mark WM2.
  • the first reference mark RM1 and the mask mark MM are simultaneously detected using the mask alignment sensor MS.
  • the measurement position at this time is A22.
  • This process uses the same edge scattered light detection as in Figure 5A to detect two marks at different heights.
  • the position of the reference mark RM1 with respect to the reference position is A22.
  • the second wafer alignment sensor WS2 detects specularly reflected light or the like from the second reference mark RM2, and the alignment is performed. At this time, the position of the first reference mark RM1 with respect to the reference position is B22. The first reference mark RM1 and the second reference mark RM2 are arranged at a predetermined distance D. As shown in FIG. 6C, the second wafer mark WM2 is detected using the second wafer alignment sensor WS2. The position of the first reference mark RM1 with respect to the reference position at this time is C22.
  • the step shown in FIG. 6A is the same as the step shown in FIG. 5A, and thus the step in FIG. 6A may be omitted.
  • the distance A22 may be replaced with A21.
  • two types of wafer alignment sensors are provided, and two types of reference marks and wafer marks are formed in correspondence with each of the sensors. It is also possible to use one type of reference mark and one type of wafer mark to support measurement by two types of wafer alignment sensors.
  • 7A to 9D are a cross-sectional view and a plan view illustrating an alignment step according to a third embodiment of the present invention.
  • a first wafer alignment sensor WS1 which is an edge scattered light oblique detection system
  • a second wafer alignment sensor which is a contour detection system using specularly reflected light
  • a wafer alignment sensor WS 2 is provided on the wafer fine stage 14
  • a reference mask R and a wafer W are arranged on the wafer fine stage 14.
  • the reference mask R has a reference mark RM1
  • the wafer W has a wafer mark WM1.
  • FIG. 7B shows a configuration example of the wafer mark WM1 and the reference mark RM1.
  • the wafer mark WM 1 and the reference mark RM 1 are each composed of a set of isolated patterns arranged in a plurality of rows, and can perform an alignment mark function by the edge of each isolated pattern and the outline of the set of isolated patterns. .
  • the dimensions and shape of the reference mark RM1 and the wafer mark WM1 are the same.
  • FIGS. 8A to 8D show a process of performing first alignment by detecting edge scattered light using the first wafer alignment sensor WS1, the reference mark RM1, and the wafer mark WM1.
  • the mask alignment sensor MS simultaneously detects the reference mark RM of the reference mask scale and the mask mark MM of the mask M by the edge scattered light.
  • the position of the reference mark RM1 with respect to the reference position at this time is A31.
  • FIG. 8B shows a step of detecting the reference mark RM1 on the reference mask R by the wafer alignment sensor WS1.
  • the reference mark RM for the reference position The position of 1 is B31. .
  • FIG. 8C shows a process of detecting wafer mark WM1 by wafer alignment sensor WS1. At this time, the position of the reference mark RM1 with respect to the reference position is C31.
  • FIG. 8D shows a step of determining the relative position between the mask M and the wafer W using the results of FIGS. 8A to 8C.
  • the difference X 31 between the position of the mask mark MM on the mask M and the position of the wafer mark WM 1 on the wafer W is
  • X31 B 31-A31- (C 31-B 31)
  • 9A to 9D show a process of performing the second alignment using the second wafer alignment sensor WS2, the reference mark RM1, and the wafer mark WM1.
  • the mask alignment sensor MS simultaneously detects the reference mark RM1 of the reference mask and the mask mark MM of the mask M. At this time, the position of the reference mark RM1 with respect to the reference position is A32.
  • the reference mark RM1 is detected by the second wafer alignment sensor WS2. At this time, the position of the reference mark RM1 with respect to the reference position is B32.
  • the wafer mark WM1 of Ueno and W is detected using the second wafer alignment sensor WS2.
  • the position of the reference mark R Ml with respect to the reference position is defined as C32.
  • FIG. 9D shows a process of aligning the wafer W and the mask M using the results of FIGS. 9A to 9C.
  • the difference X 32 in the relative position between the mask M and the wafer W is
  • X 32 B 32 -A 32- (C 32 -B 32)
  • the reference mark RM on the reference mask R and the wafer mark WM on the wafer W are detected by the same wafer alignment sensor WS. If the height of the reference mark RM is different from the height of the wafer mark WM, the detection accuracy decreases. You.
  • FIG. 10A shows a case where the thickness of the reference mask R is larger than the thickness of the wafer W, and the reference mark RM is arranged at a position higher than the wafer mark WM .
  • FIG. 10B shows a case where the thickness of the reference mask R is smaller than the thickness of the wafer W, and the reference mark RM is located at a position lower than the wafer mark WM.
  • the same wafer alignment sensor W S is used to detect the reference mark RM and the wafer mark WM having different distances along the optical axis within the depth of focus and try to detect them, the magnification cannot be increased, and the detection accuracy decreases.
  • FIG. 10C shows a configuration in which the height of the reference mask R can be adjusted.
  • Ueno and W are arranged, and a reference mask R is arranged via a height adjusting mechanism 91.
  • the height adjusting mechanism 91 includes a piezoelectric element or the like, and can adjust the height of the reference mask R.
  • the height adjusting mechanism 91 adjusts the height of the reference mask R to be equal to the height of the wafer W. By eliminating the difference in height between the reference mask R and the wafer mark WM, it is possible to increase the magnification of the wafer alignment sensor WS and improve the detection sensitivity.
  • a mask in which a membrane is formed on a silicon substrate, an exposure pattern is formed on the membrane, and the silicon substrate below the exposure pattern is removed.
  • the mask is formed by either a membrane type or a stencil type.
  • FIG. 11A shows a configuration example of a mask.
  • a mask membrane such as silicon nitride film and silicon carbide B
  • selective etching from the back surface of the silicon substrate leaves minor struts 51, and a plurality of regions of the substrate corresponding to the exposure region are formed.
  • the thickness of the mask membrane 52 is, for example, 2 ⁇
  • the height of the minor strut 51 is equal to the thickness of the silicon substrate used, for example, about 0.75 mm.
  • the width of the minor strut 51 is, for example, 170 ⁇ m.
  • the area defined by the minor strut 51 is an exposure area, and the minor strut 51 is defined as an unexposed (shielded) area defining the exposure area.
  • the minor strut 51 is defined as an unexposed (shielded) area defining the exposure area.
  • the area on the membrane 52 corresponding to the minor strut 51 cannot be used for exposure.
  • a mask mark 53 can be formed on the surface of the membrane corresponding to the minor strut 51.
  • the area having a width of 170 m is a sufficient area for arranging the alignment mark. According to this configuration, a large area for arranging the mask marks 53 can be secured.
  • the reference mask is formed by an opening formed in a membrane formed on a holding substrate such as a silicon substrate or an opaque pattern on the membrane.
  • the reference mask is a mask used only for alignment, and does not need to have the same configuration as the exposure mask.
  • the reference mark 18 is formed by the opening in the loop.
  • the transparent substrate 35 is formed of, for example, a thin SiCB film or a thin SiN film having a thickness of about 2 to 3 ⁇ .
  • the reference mark 18 is made of, for example, a heavy metal (for example, Ta (tantalum) or the like) in the case of the membrane type shown in FIG. It is formed by providing.
  • FIG. 13 is a cross-sectional view of a positioning device according to the fourth embodiment.
  • the wafer stage 12 and the mask alignment sensor MS have the same configuration as that of the alignment device according to the first embodiment shown in FIG. 1A.
  • the wafer W and the wafer-side reference mask WRM are arranged on the fine movement stage 14 of the wafer stage 12.
  • the wafer-side reference mask WR has the same configuration as the reference mask R shown in FIGS. 1B to 1E, and has a wafer-side reference mark WRM in a light-transmissive mark holding unit.
  • FIG. 1A schematically shows the mask stage 11. More specifically, the mask stage 11 includes a mask chuck 100, a displacement mechanism 101, and a support base (support base) 10. It is composed including two.
  • the support base 102 is The coarse movement stage 13 is fixed to the base on which it is mounted.
  • the support base 102 supports the displacement mechanism 101, and the displacement mechanism 101 supports the mask check 100.
  • the mask M and the mask-side reference mask MR are fixed to the bottom surface of the mask chuck 100.
  • the mask-side reference mask MR has the same configuration as the reference mask R shown in FIGS. 1B to 1E, and has a mask-side reference mark MRM in a light-transmissive mark holding unit.
  • the mask M and the mask-side reference mask MR face the wafer W and the wafer-side reference mask WR with a small gap (proximity gap) therebetween.
  • the displacement mechanism 101 has a structure similar to that of the mask stage disclosed in FIG. 2 of Japanese Patent Application Laid-Open No. 2002-3553115, and the mask held by the mask chuck 100. M can be displaced minutely in the rotation direction around the axis perpendicular to the mask surface and in the tilt direction.
  • the mask chuck 100 is provided with a wafer alignment sensor WS having a window (through-hole) in a region where the transfer pattern of the mask M is formed and a region corresponding to the mark support portion of the mask-side reference mask MR. Attached to the support base 102.
  • the wafer alignment sensor WS passes one of the wafer-side reference mark WRM and the wafer-side mark WM to the mask-side reference mark MRM through the window formed in the mask chuck 100 and the mark support of the mask-side reference mask MR. It can be detected at the same time.
  • the wafer alignment sensor WS it is possible to use the chromatic aberration double focal point optical system shown in Fig. 2D or the one using the edge scattered light oblique detection system shown in Fig. 2E. it can.
  • a positioning method according to the fourth embodiment will be described with reference to FIGS. 14 to 14D.
  • the mask alignment sensor MS simultaneously detects the wafer-side reference mark WRM and the mask mark MM of the mask M. This method is similar to the method described with reference to FIG. 3A, and the position A1 of the mask mark MM (wafer-side reference mark WRM) with respect to the reference point X0 is obtained.
  • the sensor WS simultaneously detects the mask-side reference mark MRM and the wafer mark WM. At this time, the position C1 of the wafer side reference mark WRM with respect to the reference position X0 is obtained.
  • the wafer alignment sensor WS detects only the wafer mark WM or only the wafer side reference mark WRM without detecting the mask-side reference mark MRM. Had been detected. Therefore, the accuracy of the positions B1 and C1 shown in FIGS. 3B and 3C depends on the position accuracy of the wafer alignment sensor WS. If the relative position of the wafer alignment sensor WS deviates from the reference position X0 (mask M) between the time when the position B1 is detected and the time when the position C1 is detected, an error occurs in the difference X1 to be obtained. Occurs.
  • the positions of the wafer mark WM and the wafer reference mark WRM are detected with reference to the mask-side reference mark MRM. Therefore, the position of the wafer mark WM and the position of the wafer-side reference mark WRM can be detected without depending on the relative position of the wafer alignment sensor WS with respect to the reference position X0 (mask M).
  • the mask-side reference mask MR is fixed together with the mask M to the mask chuck 100 shown in FIG. Therefore, the relative position of the mask-side reference mask MR with respect to the mask M is not easily shifted. Therefore, the position C1 shown in FIG. 14B and the position B1 shown in FIG. 14C can be detected with high accuracy. As a result, the alignment accuracy between the wafer mark WM and the mask mark MM can be improved.
  • FIG. 15 is a cross-sectional view of a positioning device according to the fifth embodiment.
  • the mask-side reference mark MRM is formed on the mask-side reference mask MR separate from the mask M.
  • the mask-side reference mark MRM is formed in the mask M.
  • the wafer alignment sensor WS can detect the mask-side reference mark MRM formed in the mask M.
  • FIG. 16 shows a plan view of the mask M.
  • a transfer pattern section MP on which a pattern to be transferred is formed is arranged in the support substrate MSP, and a reference mark section MRA is arranged at a position different from the transfer pattern section MP.
  • the mask mark MM is arranged in the transfer pattern section MP.
  • the reference mark portion MRA is composed of a light-transmissive mark support portion MRS and a mask-side reference mark MRM disposed in the mark support portion MRS.
  • the diameter of the support substrate MSP is 200 mm (8 inches)
  • the transfer pattern part MP is a rectangle of 5 O mm X 66 mm
  • the reference mark part MR A is 2 mm X 2 mm to 3 mm X 3 mm square.
  • the mask-side reference mark MRM since the mask-side reference mark MRM is disposed in the mask M, the mask-side reference mark MRM and the mask mark MM are compared with the case of the embodiment 4 shown in FIG. You can get closer. When they approach each other, the wafer mark RM and the mask-side reference mark MRM are simultaneously detected from the state shown in Fig. 14A, in which the wafer-side reference mark WRM and the mask mark MM are simultaneously detected. The moving distance of the wafer stage 12 when changing to the state B becomes short.
  • the moving distance of the wafer stage 12 can be shortened, so that more accurate alignment can be performed.
  • the wafer alignment sensor W S using the chromatic aberration double focus optical system shown in FIG. 2D is adopted, the position in two directions can be detected with one mask-side reference mark M R M.
  • FIG. 17 is a cross-sectional view of an alignment device according to the sixth embodiment.
  • edge scattered light oblique detection devices 110X and 110Y are arranged in place of the wafer alignment sensor WS shown in FIG.
  • Edge scattered light oblique detection device 1 1 O x is attached to the support base 102 so as to be movable in the y-axis direction
  • the edge scattered light oblique detection device 110 y is attached to the support base 102 so as to be movable in the X-axis direction.
  • Edge scattered light oblique detection device 110 The optical axis of X is tilted in the y-axis direction from the normal direction (z-axis direction) of the mask M, and the edge scattered light oblique detection device 110 Oy The optical axis is inclined in the X-axis direction from the normal direction of the mask M.
  • the wafer-side reference mask WR attached to the wafer stage 12 is provided with a wafer-side reference mark WRM for X and a wafer-side reference mark WRMy for y.
  • an edge scattered light oblique detection device 111 for X and an edge scattered light oblique detection device 111 for y are arranged.
  • FIG. 18A shows a plan view of the mask M.
  • FIG. A transfer pattern section MP on which a pattern to be transferred is formed is arranged in the support substrate MSP, and a reference mark section for X MR A reference mark section for x and y is provided at a position different from the transfer pattern section MP.
  • MR A y is located.
  • the transfer pattern portion MP the X mask mark MMx and the y mask mark MMy are arranged.
  • the X reference mark portion MR Ax is composed of a light-transmissive mark support portion and an X mask-side reference mark M R MX disposed in the mark support portion.
  • the y reference mark section MRAy has the same configuration, and is composed of a mark support section and the y mask side reference mark MRMy.
  • FIG. 18B shows a plan view of the X reference mark portion MR Ax.
  • the configuration of the reference mark portion MRAy for y is the same as that of the reference mark portion MRAx for X.
  • An X mask-side reference mark MRMx is arranged in the light-transmissive mark support MRS X.
  • the mask mark reference mark MRMx for x has the same configuration as the mark for edge scattered light shown in FIG.2E or FIG.4B, and has a plurality of marks arranged at least in the y direction, preferably in a matrix. Including the edge of
  • Windows WI X penetrating the mark support portion M RS X are arranged on both sides of the X mask side reference mark M R MX in the axial direction. Through this window WIx, it is possible to observe the mark for edge scattered light on the wafer side.
  • FIG. 19A shows another configuration example of the mask M.
  • the reference mark portions for X and y are separately arranged, but in the mask M in FIG. 19A, the reference mark portion for X is provided in one reference mark portion MR A.
  • Mask side reference mark For MRMx and y A mask-side reference mark MRM y is arranged.
  • FIG. 19B shows a plan view of the reference mark portion MRA.
  • a window Mix is arranged on both sides of the X-side mask reference mark M RM x (positive side and negative side in the X-axis direction), and both sides of the y-side mask side reference mark MRM y
  • the window MI y is located on the (negative side).
  • the mask-side reference mark MRM X for X and the mask-side reference mark MRM y for y have the same configuration as the mask-side reference mark shown in FIG. 18A.
  • Figure 2OA shows a bottom view of the wafer-side reference mask WR.
  • the rectangular light-transmissive mark holding part WRS is captured by the beam WB.
  • the beam WB includes, for example, an outer peripheral portion slightly around the outer peripheral line of the mark holding portion WRS, and a connecting portion connecting midpoints of two sides of the outer peripheral portion facing each other. .
  • the wafer reference mark WRM X for X is placed in one section divided by the beam WB, and the wafer side reference mark WRM y for y is placed on the diagonal of the section where the x wafer side reference mark WRM x is placed. It is located within the location compartment.
  • the X wafer-side reference mark WRM x is composed of a pair of edges arranged at a distance in the X direction, and each edge group has a plurality of edges arranged at least in the y direction, preferably in a matrix.
  • the y- wafer-side reference mark WRM y is composed of a pair of edge groups arranged apart from each other in the y direction, and each edge group has a plurality of edges arranged at least in the X direction, preferably in a matrix.
  • the beam may be omitted.
  • the basic principle of the position detection method according to the sixth embodiment is the same as the principle described in FIGS. 14A to 14C.
  • Steps corresponding to the steps shown in FIG. 14A will be described.
  • the edge scattered light oblique detector for X on the wafer stage 12 side shown in Fig. 17 1 11 X allows the X mask mark MM x shown in Fig. 0 Simultaneously detects X reference mark part WRM x shown in B.
  • the position of the wafer stage 12 is adjusted such that the X mask mark MMx is located between the pair of edge groups of the X wafer side reference mark WRMx.
  • the X mask mark MMx is observed through the mark holding portion WRS between the pair of wedge groups.
  • the X mask mark MM x The relative positional relationship between X and the wafer-side reference mark WRM x for x is accurately measured.
  • the relative positional relationship in the y direction between the mask mark MM y for y and the wafer-side reference mark WRM y for y can be accurately measured.
  • Steps corresponding to the steps shown in FIG. 14C will be described.
  • the process shown in FIG. 14B is the same as the detection principle in the process of FIG. 14C, except that the wafer-side reference mark in FIG. 14C is replaced with a wafer mark.
  • the X edge scattered light oblique detection device 1 1 O x shown in FIG. 17 allows the X mask side reference mark MRM x shown in FIG. 18 B and the X shown in FIG. 2 OA or FIG.
  • For reference mark part WRM x is detected at the same time.
  • the position of the wafer stage 12 is adjusted so that the X mask side reference mark MRM x is located between the pair of edge groups of the X wafer side reference mark WRM x.
  • the wafer reference mark WRM x for X is observed through the windows W I X on both sides of the reference mark MRM x for X. Thereby, the relative positional relationship in the x direction between the X mask-side reference mark MRM x and the X wafer-side reference mark WRM x is accurately measured.
  • the relative positional relationship in the y direction between the mask side reference mark MRM y for y and the wafer side reference mark W RM y for y can be accurately measured.
  • the edge scattered light oblique detection device 110 X and 110 Y are masked
  • the mask mark MM formed on the M and the wafer mark WM formed on the wafer W can be simultaneously detected, and the two can be aligned.
  • 21A and 21B are a plan view and a cross-sectional view, respectively, of a main part of an alignment device according to a seventh embodiment.
  • the mask stage 11 is constituted by the mask chuck 100, the displacement mechanism 101, and the support base 102.
  • Mask M is held in mask chuck 100.
  • a wafer W is held by a wafer stage similar to the wafer stage 12 shown in FIG.
  • a mask mark MM is formed in a transfer pattern portion of the mask M.
  • Mask M A window Hy penetrating the support substrate is formed.
  • Wafer mark WM is formed on wafer W.
  • the edge scattered light oblique detection device 110 is supported by the support base 102 by the X-direction moving mechanism 120, the y-direction moving mechanism 122, and the optical axis direction moving mechanism 122. I have.
  • the X-direction movement mechanism 120 and the y-direction movement mechanism 121 translate the edge scattered light oblique detection mechanism 110 y in the X-axis direction and the y-axis direction, respectively.
  • the optical axis direction moving mechanism 122 moves the edge scattered light oblique detection mechanism 110y in the optical axis direction.
  • the optical axis of the edge scattered light oblique detection device 110 y is parallel to the z x plane and is inclined from the z axis.
  • edge scattered light oblique detection device 110X is supported by the support base 102.
  • the optical axis of the edge scattered light oblique detection device 110 X is parallel to the yz plane and is inclined from the z-axis direction.
  • a window 101A through which an electron beam for exposure passes is formed in the center of the disk of the displacement mechanism 101. Cut portions 101B and 101C are formed in a part of the outer periphery of the window 101A.
  • the edge scattered light oblique detection device 110 y observes the wafer mark WM and the wafer side reference mark WRM (see Fig. 13). The posture is controlled so that the ⁇ comes into contact with the notch 101 B.
  • the edge scattered light oblique detection device 110 y can observe the wafer mark WM and the wafer-side reference mark WRM through the window H y formed in the mask M in a state of being in contact with the notch 101 B. it can.
  • the tip of the barrel of the edge scattered light oblique detection device 110X comes into contact with the cutout portion 101C.
  • the tip of the lens barrel of the edge scattered light oblique detection device 110 y is in contact with the notch 110 B, its posture can be stabilized. Therefore, the positions of the wafer mark WM and the wafer-side reference mark WRM in the y-axis direction can be measured with high accuracy based on the optical axis of the edge scattered light oblique detection device 110y. Similarly, the position of the wafer mark and the mask mark in the X-axis direction can be detected with high accuracy by the edge scattered light oblique detection device 110X.
  • the disk of the displacement mechanism 101 is rotatable around a central axis parallel to the z-axis, but its rotation angle is extremely small. Displacement mechanism 101 The disk of 1 changes in the rotation direction by a small angle. Even if it is positioned, the tip of the lens barrel of the edge scattered light oblique detection device 110y can be stably brought into contact with the cut portion 101B. Note that the displacement mechanism 101 is fixed during the period of performing the alignment using the edge scattered light oblique detection device 110y. With reference to FIGS. 22A to 22D, a description will be given of a method of performing positioning using the positioning apparatus according to the seventh embodiment.
  • the mask alignment sensor MS aligns the wafer-side reference mark WRM of the wafer-side reference mask WR with the mask mark MM of the mask M.
  • the position of the mask mark MM (the wafer side reference mark WRM) with respect to the reference point Y0 is defined as A1.
  • the wafer stage is moved, and the wafer side reference mark WRM of the wafer side reference mask WR is detected by the edge scattered light oblique detection device 110 y.
  • the position of the reference mark WRM on the wafer side with respect to the reference position Y O is B 1.
  • the tip of the lens barrel of the edge scattered light oblique detection device 110 y comes into contact with the cut portion 101 B of the displacement mechanism 101, as shown in FIGS. 21A and 21B. And the posture is kept stable.
  • the coarse movement stage 13 is moved, and the wafer mark WM is detected by the edge scattered light oblique detection device 11 Oy.
  • the position of the wafer-side reference mark WRM with respect to the reference position Y0 is defined as C1.
  • FIG. 22D shows the principle of aligning the wafer W and the mask M based on these results.
  • the wafer-side reference mark WRM is detected by the edge scattered light oblique detection device 110 y
  • the difference between the position of the wafer-side reference mark WRM and the position of the mask mark MM is B1-A1.
  • the alignment in the y-axis direction can be performed.
  • the wafer scatter mark and the mask mark can be aligned in the ⁇ - axis direction using the edge scattered light oblique detection device 110X.
  • the apparatus and method for aligning the toes were described by taking proximity exposure as an example.
  • this apparatus and method for aligning the positions may be applied to other pattern transfer methods. it can.
  • it can be applied to alignment between a mold and a wafer in nanoimprint technology.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'invention concerne un procédé d'alignement pour exposition en proximité, un premier objet étant disposé à proximité d'un second objet, et un motif du second objet étant transféré sur le premier objet au moyen d'un faisceau électronique ou d'un rayonnement ultraviolet. Un premier masque de référence comprenant une première marque de référence formée sur un support de marque sur lequel une zone de transmission lumineuse est définie sur au moins une partie dudit support, et un premier objet sur lequel une première marque d'alignement est formée sont disposés sur un premier étage. Une seconde marque d'alignement formée sur un second objet disposé sur un second étage opposé au premier via une zone de transmission lumineuse définie sur le support de marque, et une première marque de référence sont détectées concurremment à l'aide d'un premier capteur d'alignement disposé sur le premier étage. De ce fait, il est possible d'aligner facilement le premier objet avec le second.
PCT/JP2003/012377 2002-11-13 2003-09-26 Procédé et dispositif d'alignement à exposition en proximité Ceased WO2004044966A1 (fr)

Priority Applications (2)

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AU2003266662A AU2003266662A1 (en) 2002-11-13 2003-09-26 Aligning method and aligning device in proximity exposure
JP2004551188A JP4497364B2 (ja) 2002-11-13 2003-09-26 近接露光における位置合わせ方法と位置合わせ装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304596A (ja) * 2006-05-09 2007-11-22 Samsung Electronics Co Ltd 表示板の製造装置及び製造方法
KR101234954B1 (ko) 2004-10-15 2013-02-19 신토 에스 프레시젼 가부시키가이샤 2차원 좌표측정기(2次元座標測定機)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135009A (ja) * 1989-10-20 1991-06-10 Sumitomo Heavy Ind Ltd 広検出視野高精度のアライメントシステム
JPH08288201A (ja) * 1995-04-20 1996-11-01 Sumitomo Heavy Ind Ltd 近接露光に適用されるアライメント方法及びアライメント装置
JPH1131644A (ja) * 1997-07-10 1999-02-02 Sumitomo Heavy Ind Ltd 近接露光に適用される位置検出装置及び位置検出方法
JPH11121325A (ja) * 1997-09-03 1999-04-30 Canon Inc 投影露光装置
JP2000012455A (ja) * 1998-06-25 2000-01-14 Nikon Corp 荷電粒子線転写露光装置及び荷電粒子線転写露光装置におけるマスクと感応基板の位置合わせ方法
US6151120A (en) * 1997-11-26 2000-11-21 Canon Kabushiki Kaisha Exposure apparatus and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2998673B2 (ja) * 1997-01-20 2000-01-11 日本電気株式会社 ウェハ、該ウェハの位置合わせ方法および装置
JP3336955B2 (ja) * 1998-05-26 2002-10-21 ウシオ電機株式会社 裏面アライメント機能を備えた露光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135009A (ja) * 1989-10-20 1991-06-10 Sumitomo Heavy Ind Ltd 広検出視野高精度のアライメントシステム
JPH08288201A (ja) * 1995-04-20 1996-11-01 Sumitomo Heavy Ind Ltd 近接露光に適用されるアライメント方法及びアライメント装置
JPH1131644A (ja) * 1997-07-10 1999-02-02 Sumitomo Heavy Ind Ltd 近接露光に適用される位置検出装置及び位置検出方法
JPH11121325A (ja) * 1997-09-03 1999-04-30 Canon Inc 投影露光装置
US6151120A (en) * 1997-11-26 2000-11-21 Canon Kabushiki Kaisha Exposure apparatus and method
JP2000012455A (ja) * 1998-06-25 2000-01-14 Nikon Corp 荷電粒子線転写露光装置及び荷電粒子線転写露光装置におけるマスクと感応基板の位置合わせ方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101234954B1 (ko) 2004-10-15 2013-02-19 신토 에스 프레시젼 가부시키가이샤 2차원 좌표측정기(2次元座標測定機)
JP2007304596A (ja) * 2006-05-09 2007-11-22 Samsung Electronics Co Ltd 表示板の製造装置及び製造方法
US8253941B2 (en) 2006-05-09 2012-08-28 Samsung Electronics Co., Ltd. Apparatus for manufacturing display panel and method for manufacturing the same

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AU2003266662A1 (en) 2004-06-03
TWI227918B (en) 2005-02-11
TW200416849A (en) 2004-09-01
JP4497364B2 (ja) 2010-07-07
JPWO2004044966A1 (ja) 2006-03-16

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