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WO2002069375A3 - Grabenkondensator und verfahren zu seiner herstellung - Google Patents

Grabenkondensator und verfahren zu seiner herstellung Download PDF

Info

Publication number
WO2002069375A3
WO2002069375A3 PCT/DE2002/000515 DE0200515W WO02069375A3 WO 2002069375 A3 WO2002069375 A3 WO 2002069375A3 DE 0200515 W DE0200515 W DE 0200515W WO 02069375 A3 WO02069375 A3 WO 02069375A3
Authority
WO
WIPO (PCT)
Prior art keywords
trench
condenser
electrode
layers
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/000515
Other languages
English (en)
French (fr)
Other versions
WO2002069375A2 (de
Inventor
Bernhard Sell
Annette Saenger
Dirk Schumann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to KR10-2003-7011252A priority Critical patent/KR20030080234A/ko
Priority to EP02708243A priority patent/EP1364390A2/de
Publication of WO2002069375A2 publication Critical patent/WO2002069375A2/de
Publication of WO2002069375A3 publication Critical patent/WO2002069375A3/de
Priority to US10/650,817 priority patent/US6987295B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Die vorliegende Erfindung betrifft einen Grabenkondensator zur Verwendung in einer DRAM-Speicherzelle sowie ein Verfahren zur Herstellung eines solchen Grabenkondensators.Der erfindungsgemässe Grabenkondensator umfasst eine untere Kondensatorelektrode (10), ein Speicherdielektrikum (12) und eine obere Kondensatorelektrode (18), die mindestens teilweise in einem Graben (5) angeordnet sind, wobei die untere Kondensatorelektrode (10) im unteren Grabenbereich an eine Wand des Grabens angrenzt, während im oberen Grabenbereich eine an eine Wand des Grabens angrenzende Spacerschicht (9) aus einem isolierenden Material vorgesehen ist, und die obere Elektrode (18) mindestens zwei Schichten (13, 14, 15) umfasst, von denen mindestens eine metallisch ist, mit der Massgabe, dass die obere Elektrode nicht aus zwei Schichten besteht, von denen die untere Wolframsilizid und die obere dotiertes Polysilizium ist, wobei die Schichten (13, 14, 15) der oberen Elektrode sich jeweils entlang den Wänden und dem Boden des Grabens (5) bis mindestens zum oberen Rand der Spacerschicht (9) erstrecken.
PCT/DE2002/000515 2001-02-28 2002-02-13 Grabenkondensator und verfahren zu seiner herstellung Ceased WO2002069375A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2003-7011252A KR20030080234A (ko) 2001-02-28 2002-02-13 트렌치 커패시터 및 그 제조 방법
EP02708243A EP1364390A2 (de) 2001-02-28 2002-02-13 Grabenkondensator und verfahren zu seiner herstellung
US10/650,817 US6987295B2 (en) 2001-02-28 2003-08-28 Trench capacitor and method for fabricating the trench capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10109564.3 2001-02-28
DE10109564A DE10109564A1 (de) 2001-02-28 2001-02-28 Grabenkondensator und Verfahren zu seiner Herstellung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/650,817 Continuation US6987295B2 (en) 2001-02-28 2003-08-28 Trench capacitor and method for fabricating the trench capacitor

Publications (2)

Publication Number Publication Date
WO2002069375A2 WO2002069375A2 (de) 2002-09-06
WO2002069375A3 true WO2002069375A3 (de) 2003-03-13

Family

ID=7675760

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000515 Ceased WO2002069375A2 (de) 2001-02-28 2002-02-13 Grabenkondensator und verfahren zu seiner herstellung

Country Status (6)

Country Link
US (1) US6987295B2 (de)
EP (1) EP1364390A2 (de)
KR (1) KR20030080234A (de)
DE (1) DE10109564A1 (de)
TW (1) TW548837B (de)
WO (1) WO2002069375A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10109564A1 (de) * 2001-02-28 2002-09-12 Infineon Technologies Ag Grabenkondensator und Verfahren zu seiner Herstellung
US7164165B2 (en) * 2002-05-16 2007-01-16 Micron Technology, Inc. MIS capacitor
DE10226583B4 (de) * 2002-06-14 2010-07-08 Qimonda Ag DRAM-Speicherzelle für schnellen Schreib-/Lesezugriff und Speicherzellenfeld
DE102004012855B4 (de) * 2004-03-16 2006-02-02 Infineon Technologies Ag Herstellungsverfahren für einen Grabenkondensator mit Isolationskragen
US7256439B2 (en) * 2005-01-21 2007-08-14 International Business Machines Corporation Trench capacitor array having well contacting merged plate
US20070232011A1 (en) * 2006-03-31 2007-10-04 Freescale Semiconductor, Inc. Method of forming an active semiconductor device over a passive device and semiconductor component thereof
US20100184301A1 (en) * 2009-01-20 2010-07-22 Lam Research Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process
US9620410B1 (en) 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
US8293625B2 (en) * 2011-01-19 2012-10-23 International Business Machines Corporation Structure and method for hard mask removal on an SOI substrate without using CMP process
US8779490B2 (en) * 2012-07-18 2014-07-15 International Business Machines Corporation DRAM with dual level word lines
TWI619283B (zh) * 2016-05-30 2018-03-21 旺宏電子股份有限公司 電阻式記憶體元件及其製作方法與應用
US10014305B2 (en) * 2016-11-01 2018-07-03 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US9761580B1 (en) * 2016-11-01 2017-09-12 Micron Technology, Inc. Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors
US11063157B1 (en) 2019-12-27 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Trench capacitor profile to decrease substrate warpage
EP3958293B1 (de) * 2020-05-22 2024-06-12 Changxin Memory Technologies, Inc. Verfahren zur herstellung eines lochs in einer halbleiterbauelement
DE102020127640B4 (de) * 2020-07-10 2024-05-08 X-FAB Global Services GmbH Halbleiterbauelement für Leistungselektronikanwendungen und Verfahren zum Betrieb eines Leistungsmoduls
KR20230105458A (ko) 2022-01-04 2023-07-11 삼성전자주식회사 커패시터 구조체를 포함하는 반도체 장치 및 이의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0967643A2 (de) * 1998-06-22 1999-12-29 International Business Machines Corporation Salizidfüllung mit niedrigem Widerstand für Grabenkondensatoren
EP0981164A2 (de) * 1998-08-18 2000-02-23 International Business Machines Corporation Füllung mit niedrigem Widerstand für Kondensator in tiefem Graben
US6180480B1 (en) * 1998-09-28 2001-01-30 International Business Machines Corporation Germanium or silicon-germanium deep trench fill by melt-flow process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905279A (en) * 1996-04-09 1999-05-18 Kabushiki Kaisha Toshiba Low resistant trench fill for a semiconductor device
WO2001017014A1 (de) * 1999-08-30 2001-03-08 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
DE19947053C1 (de) * 1999-09-30 2001-05-23 Infineon Technologies Ag Grabenkondensator zu Ladungsspeicherung und Verfahren zu seiner Herstellung
DE10109564A1 (de) * 2001-02-28 2002-09-12 Infineon Technologies Ag Grabenkondensator und Verfahren zu seiner Herstellung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0967643A2 (de) * 1998-06-22 1999-12-29 International Business Machines Corporation Salizidfüllung mit niedrigem Widerstand für Grabenkondensatoren
EP0981164A2 (de) * 1998-08-18 2000-02-23 International Business Machines Corporation Füllung mit niedrigem Widerstand für Kondensator in tiefem Graben
US6180480B1 (en) * 1998-09-28 2001-01-30 International Business Machines Corporation Germanium or silicon-germanium deep trench fill by melt-flow process

Also Published As

Publication number Publication date
US6987295B2 (en) 2006-01-17
TW548837B (en) 2003-08-21
DE10109564A1 (de) 2002-09-12
EP1364390A2 (de) 2003-11-26
KR20030080234A (ko) 2003-10-11
WO2002069375A2 (de) 2002-09-06
US20040036102A1 (en) 2004-02-26

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