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US4454489A - Temperature stabilized microwave cavities - Google Patents

Temperature stabilized microwave cavities Download PDF

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Publication number
US4454489A
US4454489A US06/279,936 US27993681A US4454489A US 4454489 A US4454489 A US 4454489A US 27993681 A US27993681 A US 27993681A US 4454489 A US4454489 A US 4454489A
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US
United States
Prior art keywords
metal layer
cavity
cavities
quartz
rod sections
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Expired - Fee Related
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US06/279,936
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English (en)
Inventor
Amedeo Donazzan
Enzo Pome
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Telettra SpA
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Telettra Telefonia Elettronica e Radio SpA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/30—Auxiliary devices for compensation of, or protection against, temperature or moisture effects ; for improving power handling capability
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/04—Coaxial resonators

Definitions

  • the present invention relates to temperature stabilized resonant microwave cavities which do not require hermetic sealing and are easy to be frequency adjusted.
  • the load effect becomes negligible by adequately reducing the coupling amount towards the load and where necessary, by introducing an isolator between cavity and load.
  • a metal with a low expansion coefficient vs temperature is being used, i.e. Invar and Super Invar with an expansion coefficient less than/equal to 1.5 ppm/°C. and less than/equal to 0.7 ppm/°C., respectively.
  • the new cavities of this invention no longer have a body with a metal wall in more or less precious alloys, but instead they have a pure amorphous quartz body, the external surface of which has been metallized except for small areas used for couplings.
  • the metallized amorphous quartz body of this ivention may have a proper shape and sizes, it is possible to obtain temperature stabilized cavities with a resonance frequency fine adjustment and particularly apt for stable microwave sources by coupling to a suitable active circuit.
  • TE 010 , TE 111 and TE 011 modes circular waveguide cavities.
  • FIG. 1 is a simplified process scheme
  • FIGS. 2, 2A, 3A and 3B are schematic, partially exploded perspective views
  • FIGS. 3A', 3B', 4, 4A and 5 are equivalent circuits
  • FIG. 6 is a schematic partially cross-sectioned top view of a particular embodiment.
  • FIG. 1 is a simplified view of the cavities being prepared according to the invention.
  • Phase I A quartz rod is cut into small quartz cylinders QU having the required dimensions (diameter and length).
  • the external surface of QU is covered with a thin metal layer (ME) (preferably in the micron order) e.g. by diving or drowning it in a copper or in another conductive metal bath.
  • ME thin metal layer
  • Phase III Quartz cylinder QU thus covered by a thin metal layer is provided with a second layer INS (a socalled thickening layer) of a metal which is either the same or it is different from metal layer ME.
  • INS thickening layer
  • Thickening layer INS is preferred to be in the order of a tenth part of a mm and it should be applied by a galvanic bath. It is outlined that layers ME (phase II) and INS (phase III) may also be applied in a different way e.g. by brushing it with conducting paints (copper, silver or similar) or by brushing followed by a galvanic bath. In all cases the following characteristics must be attained.
  • Quartz quality use is made of pure amorphous quartz, preferably of optical quality, obtained from rectified and worked rods.
  • Metallizing this is to create around the quartz a high conductivity metal surface tightly connected to the quartz surface thus preventing air or other gas from being stored in the resonant cavity inside (i.e. the quartz volume inside the metal surface).
  • the first metal layer which is to assure a high electric conductivity and a thickness able to contain the total electric current associated to the resonant electromagnetic field is covered by conducting material INS preferably by means of a galvanic procedure so as to increase mechanical strength. This will facilitate mechanical and electrical connections to the active device or to the coupled devices to which the cavities must supply the required electrical characteristics.
  • FIGS. 2, 3A and 3B (being schematic, partial and exploded views respectively) illustrate three types of coupling between cavities C M of the invention and the microstrip MST.
  • L represents the transmission line with its dielectric support
  • FCC is the element assuring the electrical continuity of the assembly
  • CAL is an aluminum body consisting of a plate CAL' bearing a support base CAL" (in a right angle position with respect to CAL') and of pin CIN being in a right angle position with respect to CAL' as well.
  • the metallized and reinforced cavity CM according to the invention is cylinder shaped and provided with a hole 10 in the middle which may receive and hold nut 11 of threaded pin CIN.
  • CM is a ⁇ /2 coaxial cavity with a hole F SO receiving probe SO coupling the ⁇ /2 cavity to the microstrip MST.
  • FIG. 2A represents an assembly of the several elements, whilst FIG. 2 is an exploded view of the loose elements.
  • FIG. 3A illustrates a scheme of the microstrip coupling towards circular cavity CM via iris IR.
  • FIG. 3A' shows the equivalent circuit of the above microstrip coupling towards the cavity via iris CM.
  • FIG. 3B represents the case wherein the unique microstrip MST of FIG. 2A is substituted by microstrip MST' with two connections 15--15'; one of these connections may be used for the fine adjustment of the CM cavity resonance frequency similar to the one shown in FIG. 2A.
  • FIG. 3B' represents the equivalent scheme of FIG. 3B with the microstrip connections 15--15' coupled to the CM cavities via iris IR, in that the CM cavity is inserted into its hollow support S.
  • Probe SO of FIG. 2 is preferred to be of a metal alloy with a low expansion and its surface treated so as to increase its conductivity.
  • the probe can also be obtained by metallization.
  • the active device coupled to the cavity may be set up by means of semiconductor elements such as bipolar transistors, FETs, Gunn diodes etc.
  • the cavity position may have various configurations e.g. series-connected to the load, parallel connected to the load, in feedback, parallel connected to the active element etc.
  • An outstanding feature is the possibility of changing the oscillator frequency by simply replacing the resonant cavity by another one having slightly different dimensions, whilst the active circuit remains unaltered.
  • a network is to be inserted and integrated to the active device; by means of a weak cavity coupling this network permits a resonant frequency fine adjustment of the cavity itself.
  • FIG. 4 shows a device on microstrip MST consisting of active bipolar element AT.
  • the device may be laid out with a serial LC resonant circuit with negative resistance (-R) and a low Q. Via iris IR a circular cavity according to the invention is connected to this device and for dimensioning reasons it is energized in the TM 010 mode.
  • a serial LC resonant circuit with negative resistance (-R) Via iris IR a circular cavity according to the invention is connected to this device and for dimensioning reasons it is energized in the TM 010 mode.
  • a reactive circuit is weakly coupled through the same iris.
  • This circuit too is arranged on a plate of the active device (coupling as shown in FIG. 3B).
  • the equivalent circuit may be as the one shown in FIG. 5 wherein the symbols mean what follows:
  • the device mechanical configuration is shown if FIG. 6 and is such that the oscillating frequency can be changed by simply replacing the cavity.
  • the symbols in FIG. 6 mean what follows:
  • Invar ring (2) is soldered to cavity (4) beating with device body (1) (beating is done by means of rods (3) or similar) assuring the cavity mechanical position referred to the coupling hole axis and earth continuity.

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
US06/279,936 1980-07-16 1981-07-02 Temperature stabilized microwave cavities Expired - Fee Related US4454489A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT23476A/80 1980-07-16
IT23476/80A IT1131598B (it) 1980-07-16 1980-07-16 Cavita' per microonde stabili in temperatura

Publications (1)

Publication Number Publication Date
US4454489A true US4454489A (en) 1984-06-12

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ID=11207433

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US06/279,936 Expired - Fee Related US4454489A (en) 1980-07-16 1981-07-02 Temperature stabilized microwave cavities

Country Status (12)

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US (1) US4454489A (es)
JP (1) JPS57154902A (es)
AR (1) AR224832A1 (es)
BR (1) BR8104501A (es)
DE (2) DE8120651U1 (es)
ES (1) ES503991A0 (es)
FR (1) FR2487132A1 (es)
GB (1) GB2083713A (es)
IT (1) IT1131598B (es)
NL (1) NL8103382A (es)
NO (1) NO812319L (es)
SE (1) SE8104143L (es)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509009A (en) * 1983-05-19 1985-04-02 The United States Of America As Represented By The Secretary Of The Army Single device for measurement of infrared or millimeter wave radiation
US4668925A (en) * 1984-11-17 1987-05-26 Tdk Corporation Dielectric resonator and method for making
US4748427A (en) * 1985-11-20 1988-05-31 Gte Telecommunicazioni, S.P.A. Microwave resonating cavity with metallized dielectric
US4811214A (en) * 1986-11-14 1989-03-07 Princeton University Multinode reconfigurable pipeline computer
US5459633A (en) * 1992-08-07 1995-10-17 Daimler-Benz Ag Interdigital capacitor and method for making the same
US6724280B2 (en) 2001-03-27 2004-04-20 Paratek Microwave, Inc. Tunable RF devices with metallized non-metallic bodies

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3373596D1 (en) * 1983-01-18 1987-10-15 Matsushita Electric Industrial Co Ltd Coaxial resonator
DE4319886C1 (de) * 1993-06-16 1994-07-28 Ant Nachrichtentech Anordnung zum Kompensieren temperaturabhängiger Volumenänderungen eines Hohlleiters

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE879853C (de) * 1951-07-04 1953-06-15 Siemens Ag Resonator fuer Hochfrequenzschwingungen
US2704830A (en) * 1950-03-01 1955-03-22 Rca Corp Tuning means for dielectric filled cavity resonators
GB1199908A (en) * 1968-03-12 1970-07-22 Thomson Csf Band-Pass Filter for Microwaves
US3636480A (en) * 1970-01-28 1972-01-18 Sperry Rand Corp Stable solid dielectric microwave resonator and separable waveguide means
US3821669A (en) * 1950-10-24 1974-06-28 Naval Res Lab Fixed frequency solid dielectric fused quartz cavity
US3982215A (en) * 1973-03-08 1976-09-21 Rca Corporation Metal plated body composed of graphite fibre epoxy composite

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377259A (en) * 1965-03-15 1968-04-09 Gen Dynamics Corp Method for preventing oxidation degradation of copper by interposing barrier betweencopper and polypropylene
FR1526487A (fr) * 1966-06-08 1968-05-24 Marconi Co Ltd Filtres à micro-ondes à enveloppe conductrice

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2704830A (en) * 1950-03-01 1955-03-22 Rca Corp Tuning means for dielectric filled cavity resonators
US3821669A (en) * 1950-10-24 1974-06-28 Naval Res Lab Fixed frequency solid dielectric fused quartz cavity
DE879853C (de) * 1951-07-04 1953-06-15 Siemens Ag Resonator fuer Hochfrequenzschwingungen
GB1199908A (en) * 1968-03-12 1970-07-22 Thomson Csf Band-Pass Filter for Microwaves
US3636480A (en) * 1970-01-28 1972-01-18 Sperry Rand Corp Stable solid dielectric microwave resonator and separable waveguide means
US3982215A (en) * 1973-03-08 1976-09-21 Rca Corporation Metal plated body composed of graphite fibre epoxy composite

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509009A (en) * 1983-05-19 1985-04-02 The United States Of America As Represented By The Secretary Of The Army Single device for measurement of infrared or millimeter wave radiation
US4668925A (en) * 1984-11-17 1987-05-26 Tdk Corporation Dielectric resonator and method for making
US4748427A (en) * 1985-11-20 1988-05-31 Gte Telecommunicazioni, S.P.A. Microwave resonating cavity with metallized dielectric
US4811214A (en) * 1986-11-14 1989-03-07 Princeton University Multinode reconfigurable pipeline computer
US5459633A (en) * 1992-08-07 1995-10-17 Daimler-Benz Ag Interdigital capacitor and method for making the same
US6724280B2 (en) 2001-03-27 2004-04-20 Paratek Microwave, Inc. Tunable RF devices with metallized non-metallic bodies

Also Published As

Publication number Publication date
DE8120651U1 (de) 1986-01-30
IT1131598B (it) 1986-06-25
BR8104501A (pt) 1982-03-30
DE3127838A1 (de) 1982-04-15
ES8204563A1 (es) 1982-05-01
SE8104143L (sv) 1982-01-17
ES503991A0 (es) 1982-05-01
GB2083713A (en) 1982-03-24
NO812319L (no) 1982-01-18
FR2487132A1 (fr) 1982-01-22
IT8023476A0 (it) 1980-07-16
AR224832A1 (es) 1982-01-15
JPS57154902A (en) 1982-09-24
NL8103382A (nl) 1982-02-16

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