US20170255005A1 - Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method - Google Patents
Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method Download PDFInfo
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- US20170255005A1 US20170255005A1 US15/599,017 US201715599017A US2017255005A1 US 20170255005 A1 US20170255005 A1 US 20170255005A1 US 201715599017 A US201715599017 A US 201715599017A US 2017255005 A1 US2017255005 A1 US 2017255005A1
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Images
Classifications
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
- G02B6/0031—Reflecting element, sheet or layer
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
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- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
Definitions
- An embodiment of the present invention relates to an illumination apparatus incorporating a spatial modulation unit for generating a predetermined light intensity distribution (pupil luminance distribution) on an illumination pupil plane on the basis of light from a light source, an illumination method using the spatial modulation unit, an exposure apparatus incorporating the illumination apparatus, and a device manufacturing method using the exposure apparatus.
- a reflection-type spatial light modulator is hitherto known as a spatial modulator to form a pupil luminance distribution for modified illumination (e.g., a dipolar, quadrupolar, or other distribution) in exposure apparatus.
- modified illumination e.g., a dipolar, quadrupolar, or other distribution
- Such a reflection-type spatial light modulator is described, for example, in Japanese Patent Application Laid-open No. 2002-353105 (Document 1).
- Patent Document 2 U.S. Pat. No. 6,466,304.
- a multilevel pupil luminance distribution is obtained by placing a spatial filter with a number of transparent regions composed of a semitransparent substrate and a masking film, in the illumination pupil plane.
- the above-cited Document 1 discloses nothing about formation of the multilevel pupil luminance distribution. Since the technology in the above-cited Document 2 uses the spatial filter to obtain the multilevel pupil luminance distribution, it fails to obtain a multilevel pupil luminance distribution in which luminances (light intensities) in respective zones on the illumination pupil plane are optionally controlled.
- An embodiment of the present invention has been accomplished in order to solve the problem as described above, and provides an illumination apparatus and illumination method with a structure capable of forming a multilevel pupil luminance distribution in which luminances in respective zones on the illumination pupil plane are optionally controlled, and to provide an exposure apparatus incorporating the illumination apparatus and a device manufacturing method using the exposure apparatus.
- An embodiment of the present invention provides an illumination apparatus and illumination method which are configured to form a predetermined light intensity distribution on an illumination pupil plane on the basis of light from a light source, and to implement Köhler illumination on an illumination target surface using the predetermined light intensity distribution as a light source.
- an embodiment of the present invention provides an illumination apparatus which comprises a spatial light modulator, a condensing optical system, and a control unit.
- the spatial light modulator has a plurality of reflecting surfaces whose postures are controlled independently of each other. These reflecting surfaces are two-dimensionally arranged on an optical path of light traveling from a light source to an illumination pupil plane.
- the condensing optical system are arranged in a light path of light from the reflecting surfaces of the spatial light modulator to form a predetermined light intensity distribution on the illumination pupil plane.
- the condensing optical system condenses light from the reflecting surfaces of the spatial light modulator to form a predetermined light intensity distribution on the illumination pupil plane.
- the control unit feeds a control signal to the spatial light modulator in accordance with a light intensity distribution to be formed on the illumination pupil plane.
- the condensing optical system converts light provided with a predetermined angle distribution by the reflecting surfaces of the spatial light modulator, into a position distribution on the illumination pupil plane.
- the control unit controls a number of the reflecting surfaces contributing to arriving light, for each of points on the illumination pupil plane constituting the light intensity distribution.
- An embodiment of the present invention provides an illumination method which comprises arrangement of a plurality of reflecting surfaces, arrangement of a condensing optical system, and posture control of the reflecting surfaces.
- the postures of the respective reflecting surfaces are controlled independently of each other and the reflecting surfaces are two-dimensionally arranged on an optical path of light traveling from a light source to an illumination pupil plane.
- the condensing optical system is arranged on an optical path of light traveling from the reflecting surfaces to the illumination pupil plane and functions to convert light provided with a predetermined angle distribution by the reflecting surfaces, into a position distribution on the illumination pupil plane.
- the posture control of the reflecting surfaces comprises first controlling a number of the reflecting surfaces contributing to arriving light, for each of points on the illumination pupil plane constituting the light intensity distribution, when the predetermined light intensity distribution is formed on the illumination pupil plane by condensing the light from the reflecting surfaces by the condensing optical system.
- the posture control is carried out for each group of reflecting surfaces controlled in this manner.
- An embodiment of the present invention provides an exposure apparatus which comprises the illumination apparatus with the structure as described above (an embodiment of the illumination apparatus according to the present invention) for illuminating a predetermined pattern, and performs exposure of the predetermined pattern on a photosensitive substrate.
- An embodiment of the present invention provides a device manufacturing method which is to manufacture a desired device, using the exposure apparatus with the structure as described above (an embodiment of the exposure apparatus according to the present invention).
- the device manufacturing method comprises an exposure block, a development block, and a processing block.
- the exposure block is to effect the exposure of the predetermined pattern on the photosensitive substrate, using the exposure apparatus with the structure as described above.
- the development block is to develop the photosensitive substrate onto which the predetermined pattern has been transferred, and thereafter to form a mask layer in a shape corresponding to the predetermined pattern on a surface of the photosensitive substrate.
- the processing block is to process the surface of the photosensitive substrate through the mask layer.
- FIG. 1 is a drawing schematically showing a configuration of the exposure apparatus according to an embodiment of the present invention
- FIG. 2 is an optical path diagram showing arrangement of a spatial light modulator and a condensing optical system, as a major part of the illumination apparatus and illumination method according to an embodiment of the present invention
- FIGS. 3A to 3D are drawings schematically showing a configuration of the spatial light modulator shown in FIG. 2 ;
- FIG. 4 is a drawing for explaining an example of grouping of a plurality of mirror elements in the spatial light modulator shown in FIG. 2 ;
- FIGS. 5A and 5B are drawings for schematically explaining another example of a technique to control a pupil intensity distribution on a multilevel basis
- FIG. 6 is a flowchart for explaining manufacturing blocks of semiconductor devices, as the device manufacturing method according to an embodiment of the present invention.
- FIG. 7 is a flowchart for explaining manufacturing blocks of a liquid crystal device such as a liquid crystal display device, as the device manufacturing method according to another embodiment of the present invention.
- FIGS. 1 to 3, 3A to 3D, 4, 5A, 5B and 6 to 7 the same portions and the same elements will be denoted by the same reference symbols, without redundant description.
- FIG. 1 is a drawing schematically showing a configuration of the exposure apparatus according to an embodiment of the present invention.
- the Z-axis is set along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane of FIG. 1 in a plane of the wafer W, and the X-axis along a direction normal to the plane of FIG. 1 in the plane of the wafer W.
- the exposure apparatus EA has an illumination apparatus IL, a mask stage MS supporting a mask M, a projection optical system PL, and a wafer stage WS supporting the wafer W.
- the illumination apparatus IL has a light source 1 and a spatial light modulation unit 3 arranged in the order named along the optical axis AX of the exposure apparatus EA.
- the exposure apparatus EA is configured to illuminate the mask M by means of the illumination apparatus IL on the basis of light from the light source 1 and to project an image of a surface with a pattern thereon (first surface) of the mask M, onto a surface on the wafer W (second surface) by means of the projection optical system PL.
- the illumination apparatus IL which illuminates the surface with the pattern thereon (first surface) of the mask M with the light supplied from the light source 1 , implements modified illumination (off-axis illumination), e.g., dipole, quadrupole, or other illumination by means of the spatial light modulation unit 3 .
- modified illumination off-axis illumination
- the illumination apparatus IL has a polarization control unit 2 , a spatial light modulation unit 3 , a zoom optical system 4 , a fly's eye lens 5 , a condenser optical system 6 , an illumination field stop (mask blind) 7 , and a field stop imaging optical system 8 along the optical axis AX.
- the spatial light modulation unit 3 forms a desired pupil luminance distribution (pupil intensity distribution) in its far field (Fraunhofer diffraction region), based on the light from the light source 1 having traveled through the polarization control unit 2 .
- a spatial light modulator 3 a of the spatial light modulation unit 3 is composed of a large number of mirror elements as described below, and the illumination apparatus IL also has a control unit 10 which outputs a control signal for controlling inclinations of these mirror elements, to the spatial light modulator 3 a.
- the polarization control unit 2 is disclosed, for example, in U.S. Patent Published Application No. 2006/0055834A1.
- the teachings of the U.S. Patent Published Application No. 2006/0055834A1 are incorporated by reference.
- the fly's eye lens 5 divides the wavefront of incident light and forms a secondary light source consisting of light source images as many as lens elements thereof on the rear focal plane of the fly's eye lens 5 .
- the fly's eye lens 5 applicable herein is, for example, a cylindrical micro fly's eye lens. Such a cylindrical micro fly's eye lens is disclosed, for example, in U.S. Pat. No. 6,913,373. The teachings of the U.S. Pat. No. 6,913,373 are incorporated by reference.
- the mask M disposed on an illumination target surface is subjected to Köhler illumination, using the secondary light source formed by the fly's eye lens 5 , as a light source. Therefore, the plane where this secondary light source is formed becomes a plane conjugate with an aperture stop of the projection optical system PL and thus can be called an illumination pupil plane of the illumination apparatus IL.
- the illumination target surface (the surface where the mask M is arranged or the surface where the wafer W is arranged) becomes an optical Fourier transform surface with respect to the illumination pupil plane.
- the pupil luminance distribution (which is also referred to as a pupil intensity distribution) is a light intensity distribution on the illumination pupil plane of the illumination apparatus IL or on a plane conjugate with the illumination pupil plane.
- a pupil intensity distribution is a light intensity distribution on the illumination pupil plane of the illumination apparatus IL or on a plane conjugate with the illumination pupil plane.
- the number of wavefront divisions by the fly's eye lens 5 is large, there is a high correlation between the global light intensity distribution formed on the entrance plane of the fly's eye lens 5 and the global light intensity distribution of the entire secondary light source, and, therefore, the light intensity distributions on the entrance plane of the fly's eye lens 5 and on the plane conjugate with the entrance plane can also be called pupil luminance distributions.
- the condenser optical system 6 condenses beams of light emitted from the fly's eye lens 5 and thereafter the condensed beams illuminate the illumination field stop 7 in a superimposed manner.
- the light from the illumination field stop 7 travels through the field stop imaging optical system 8 to reach the mask M with the predetermined pattern thereon and to form an illumination region as an image of an aperture of the illumination field stop 7 in at least a part of the pattern-formed region of the mask M.
- FIG. 1 is depicted without any path bending mirror for bending the optical axis AX, but it is possible to arrange a path bending mirror or path bending mirrors as occasion may demand.
- the mask M is mounted on the mask stage MS.
- the projection optical system PL forms an image of the first surface on a projection surface (second surface) Wa of the wafer W mounted on the wafer stage WS, based on light from the illumination region formed on the pattern surface (first surface) of the mask M by the illumination apparatus IL.
- one-shot exposure or scan exposure is carried out while two-dimensionally driving and controlling the wafer stage WS and, therefore, two-dimensionally driving and controlling the wafer W, in the plane (X-Y plane) perpendicular to the optical axis AX of the projection optical system PL.
- This causes the pattern of the mask M to be sequentially transferred into each of exposure areas on the wafer W.
- FIG. 2 is an optical path diagram showing the spatial light modulation unit 3 and zoom optical system 4 shown in FIG. 1 .
- FIG. 3A is a partial perspective view of the spatial light modulator 3 a in the spatial light modulation unit 3
- FIG. 3B is a drawing for explaining parameters for control on the postures of the mirror elements
- FIG. 3C is a partial perspective view showing one of the mirror elements in the spatial light modulator 3 a
- FIG. 3D is a drawing showing a cross section along line I-I of the mirror element shown in FIG. 3C . It is noted that FIGS. 2 and 3 are depicted without hatching for sections, for easier viewing.
- the spatial light modulation unit 3 has a prism 3 b , and the reflective spatial light modulator 3 a attached integrally to the prism 3 b .
- the prism 3 b is made of a glass material, e.g., fluorite.
- the prism 3 b is of a shape in which one side face of a rectangular parallelepiped is depressed in a V-shaped wedge form, and is also called a K prism.
- one side face of the rectangular parallelepiped part is composed of two planes PS 1 , PS 2 (first and second planes PS 1 , PS 2 ) intersecting at an obtuse angle as an intersecting line (straight line) P 1 a between them subsides inside.
- the spatial light modulator 3 a is attached onto a side face of the prism 3 b facing both of these two side faces in contact at the intersecting line P 1 a .
- the optical material forming the base of the spatial light modulator 3 a is not limited to fluorite, but it may be silica glass or other optical glass.
- the two side faces (the sides facing each other) in contact at the intersecting line P 1 a function as first and second reflecting surfaces R 11 , R 12 . Therefore, the first reflecting surface R 11 is located on the first plane PS 1 .
- the second reflecting surface R 12 is located on the second plane PS 2 intersecting with the first plane PS 1 .
- the angle between the first and second reflecting surfaces R 11 , R 12 is an obtuse angle.
- angles herein may be determined, for example, as follows: the angle between the first and second reflecting surfaces R 11 , R 12 is 120°; the angle between the side face (entrance plane IP) of the prism P 1 perpendicular to the optical axis AX, and the first reflecting surface R 11 is 60°; the angle between the side face (exit plane OP) of the prism P 1 perpendicular to the optical axis AX, and the second reflecting surface R 12 is 60°.
- the prism 3 b is so arranged that the side face to which the spatial light modulator 3 a is attached is parallel to the optical axis AX, that the first reflecting surface R 11 is located on the light source 1 side (upstream in the exposure apparatus EA), and that the second reflecting surface R 12 is located on the fly's eye lens 5 side (downstream in the exposure apparatus EA). Therefore, the first reflecting surface R 11 of the prism 3 b is obliquely arranged with respect to the optical axis AX of the exposure apparatus EA, as shown in FIG. 2 .
- the second reflecting surface R 12 of the prism 3 b is also obliquely arranged with an opposite inclination to the first reflecting surface R 11 with respect to the optical axis AX of the exposure apparatus EA, as shown in FIG. 2 .
- the first reflecting surface R 11 of the prism 3 b reflects light incident in parallel with the optical axis AX of the exposure apparatus EA.
- the spatial light modulator 3 a is arranged in the optical path between the first reflecting surface R 11 and the second reflecting surface R 12 and reflects the light reflected on the first reflecting surface R 11 .
- the second reflecting surface R 12 of the prism 3 b reflects the light reflected on the spatial light modulator 3 a . This light from the reflecting surface R 12 is emitted, specifically, into the zoom optical system 4 in the illumination apparatus IL of the exposure apparatus EA.
- the intersecting line P 1 a being a ridge line formed by the first and second planes PS 1 , PS 2 is located on the spatial light modulator 3 a side with respect to the first and second reflecting surfaces R 11 , R 12 .
- the prism 3 b in this embodiment is integrally formed of one optical block, but the prism 3 b may be constructed using a plurality of optical blocks.
- the spatial light modulator 3 a applies spatial modulation to the incident light, according to a position where the light reflected on the first reflecting surface R 11 is incident.
- This spatial light modulator 3 a includes a large number of microscopic mirror elements SE 1 arranged two-dimensionally on a predetermined plane.
- the light beam incident to the spatial light modulator 3 a travels, for example, as follows: a ray L 1 impinges upon a mirror element SE 1 a out of the plurality of mirror elements SE 1 of the spatial light modulator 3 a ; a ray L 2 impinges upon a mirror element SE 1 b different from the mirror element SE 1 a out of the plurality of mirror elements SE 1 of the spatial light modulator 3 a ; a ray L 3 impinges upon a mirror element SE 1 c different from the mirror elements SE 1 a , SE 1 b out of the plurality of mirror elements SE 1 of the spatial light modulator 3 a ; a ray L 4 impinges upon a mirror element SE 1 d different from the mirror elements SE 1 a -SE 1 c out of the plurality of mirror elements SE 1 of the spatial light modulator 3 a ; a ray L 5 impinges upon a mirror element SE 1 e different from the mirror elements SE 1 a -
- the mirror elements SE 1 a -SE 1 e apply the spatial modulation according to the installation position of their own to the arriving rays L 1 -L 5 , respectively.
- FIG. 2 is depicted with illustration of only the five mirror elements SE 1 a -SE 1 e , for easier explanation, but the number of mirror elements does not have to be limited to five.
- the prism 3 b is so arranged that an air-equivalent length from the entrance plane IP of the prism 3 b (where the rays L 1 -L 5 are incident) via the mirror elements SE 1 a - SE 1 e to the exit plane OP of the prism 3 b where the rays are outgoing, is equal to an air-equivalent length from a position corresponding to the entrance plane IP to a position corresponding to the exit plane OP without the prism 3 b in the exposure apparatus EA.
- An air-equivalent length is an optical path length obtained by reducing an optical path length in an optical system to one in air having the refractive index of 1, and an air-equivalent length in a medium having the refractive index n is obtained by multiplying an optical path length therein by 1/n.
- the spatial light modulator 3 a is arranged near the front focal point of the zoom optical system 4 which can be regarded as a condensing optical system.
- the light reflected by the mirror elements SE 1 a -SE 1 e of the spatial light modulator 3 a and provided with a predetermined angle distribution forms a light intensity distribution at a predetermined position on the rear focal plane 5 a of the zoom optical system 4 .
- the zoom optical system 4 is a Fourier transform optical system which converts angles given to the emerging rays by the mirror elements SE 1 a -SE 1 e of the spatial light modulator 3 a , into positions on the plane 5 a being the far field (Fraunhofer diffraction region) of the spatial light modulator 3 a .
- the zoom optical system 4 applicable herein is, for example, a zoom optical system whose projection is an orthogonal projection.
- the entrance plane of the fly's eye lens 5 is located near this plane Sa and the light intensity distribution (luminance distribution) of the secondary light source formed by the fly's eye lens 5 is a distribution according to the light intensity distribution formed by the spatial light modulator 3 a and zoom optical system 4 .
- the spatial light modulator 3 a is a movable multi- mirror including the mirror elements SE 1 being a large number of microscopic reflecting elements laid with their reflecting surface of a planar shape up.
- Each mirror element SE 1 is movable and inclination of the reflecting surface thereof, i.e., an angle and direction of inclination of the reflecting surface, is independently controlled by the control unit 10 (posture control of the reflecting surfaces).
- Each mirror element SE 1 can be continuously or discretely rotated by a desired angle of rotation around each of axes along two directions parallel to the reflecting surface thereof and orthogonal to each other. Namely, each mirror element SE 1 is so configured that the inclination thereof can be controlled in two dimensions along the reflecting surface thereof.
- a preferred control method is to control the angle of rotation in multiple stages (e.g., . . . , ⁇ 2.5°, ⁇ 2.0°, . . . , 0°, +0.5°, . . . , +2.5°, . . .).
- the above-described posture control of the reflecting surface for each mirror element SE 1 is implemented by adjusting an angle 0 between a normal to a reference plane of the spatial light modulator 3 a (z-axis) and a normal to the reflecting surface (z′ axis), as shown in FIG. 3B .
- the reference plane herein is a plane coincident with the reflecting surface before the posture control, which is an x-y plane defined by an x-axis and a y-axis orthogonal to the normal z′ to the reflecting surface before the posture control.
- the angle ⁇ between the normal z (z-axis) to the reference plane and the normal z′ to the reflecting surface is given by a rotation angle component ⁇ x around the x-axis and a rotation angle component ⁇ y around the y-axis, as specific posture control information.
- the rotation angle component ⁇ x is an angle between the normal z to the reference plane and the normal z′ to the reflecting surface when the normal z′ is projected onto the y-z plane
- the rotation angle component ⁇ y is an angle between the normal z to the reference plane and the normal z′ to the reflecting surface when the normal z′ is projected onto the x-z plane.
- the contour of the mirror elements SE 1 is square in this embodiment, but the contour is not limited to it. However, the contour is preferably a shape permitting arrangement without a gap (the closest packing) in terms of light utilization efficiency.
- the gap between adjacent mirror elements SE 1 is preferably set to a necessary minimum level.
- FIG. 3C is a drawing schematically showing a configuration of one mirror element out of the plurality of mirror elements SE 1 of the spatial light modulator 3 a and, more specifically, a drawing schematically showing a drive unit for controlling the posture of the reflecting surface in the mirror element SE 1 .
- FIG. 3D is a drawing showing a cross section of the mirror element SE 1 along line I-I shown in FIG. 3C .
- the mirror element SE 1 has a base 30 , a support 31 disposed on this base 30 , a plate member 32 connected to the support 31 on the opposite side to the base 30 , a reflecting surface 33 consisting of a reflecting film formed on this plate member 32 , and four electrodes 34 a - 34 d arranged so as to surround the support 31 on the base 30 .
- the plate member 32 is inclinable around two axes (x-axis and y-axis) orthogonal to each other on a plane parallel to the base 30 with a fulcrum at a joint to the support 31 . Then potentials are given to the electrodes 34 a - 34 d arranged at respective positions on the base side corresponding to the four corners of the plate member 32 , to generate an electrostatic force between each electrode 34 a - 34 d and the plate member 32 , thereby varying the gap between each electrode 34 a - 34 d and the plate member 32 (drive unit). This causes the plate member 32 to be inclined on the fulcrum of the support 31 and, therefore, the reflecting surface 33 formed on the plate member 32 is inclined.
- each of the three mirror elements SE 1 a , SE 1 c , SE 1 e is inclined by a first angle ( ⁇ x1 , ⁇ y1 ) with respect to the reference plane of the spatial light modulator 3 a ; each of the two mirror elements SE 1 b , SE 1 d is inclined by a second angle ( ⁇ x2 , ⁇ y2 ) different from the first angle with respect to the reference plane of the spatial light modulator 3 a.
- the reference plane of the spatial light modulator 3 a (cf. FIG. 3B ) means a plane in which the large number of mirror elements SE 1 of the spatial light modulator 3 a are two-dimensionally arranged.
- the first angle and second angle are defined using rotation directions ⁇ x , ⁇ y around the rotation axes of two axes (x-axis and y-axis) orthogonal in the foregoing plane, as shown in FIG. 3B .
- the rays L 1 , L 3 , L 5 reflected on the three mirror elements SE 1 a , SE 1 c , SE 1 e of the spatial light modulator 3 a are reflected on the second reflecting surface R 12 of the prism 3 b and thereafter are condensed by the zoom optical system 4 .
- the rays L 1 , L 3 , L 5 arrive at a point P 1 on the rear focal plane Sa of the zoom optical system 4 .
- the rays L 2 , L 4 reflected on the two mirror elements SE 1 b , SE 1 d of the spatial light modulator 3 a are reflected on the second reflecting surface R 12 of the prism 3 b and thereafter are condensed by the zoom optical system 4 .
- the rays L 2 , L 4 arrive at a point P 2 on the rear focal plane 5 a of the zoom optical system 4 .
- the light intensity at a predetermined point is determined according to the number of reflecting surfaces (SE 1 a , SE 1 c , SE 1 e or SE 1 b , SE 1 d ) contributing to rays (L 1 , L 3 , L 5 or L 2 , L 4 ) arriving at the predetermined point (P 1 or P 2 ) on the rear focal plane 5 a of the zoom optical system 4 which can be regarded as the illumination pupil plane.
- the light intensity distribution on the plane 5 a can be controlled to a desired distribution.
- the light intensity distribution (pupil luminance distribution) formed on the plane 5 a is one in which the light intensity at the point P 1 is 3, the light intensity at the point P 2 is 2, and the light intensity in the other region is 0.
- the control unit 10 to perform the posture control in the spatial light modulator 3 a is configured to control the number of reflecting surfaces contributing to arriving light, for each point (e.g., P 1 or P 2 ) forming the light intensity distribution formed on the plane 5 a , the light intensity at the predetermined point (P 1 or P 2 ) on the plane 5 a can be set at a desired value and, in turn, the light intensity distribution on the plane 5 a can be optionally controlled on a multilevel basis.
- the zoom optical system 4 Since in this embodiment the zoom optical system 4 has the optical Fourier transform action, the rays are superimposed at one point P 1 on the rear focal plane 5 a of the zoom optical system 4 even though the inclinations of the three mirror elements SE 1 a , SE 1 c , SE 1 e are the same first angle ( ⁇ x1 , ⁇ y1 ); and the rays are also superimposed at one point P 2 on the rear focal plane 5 a of the zoom optical system 4 even though the inclinations of the two mirror elements SE 1 b , SE 1 d are the same second angle ( ⁇ x2 , ⁇ y2 ).
- the inclinations of the reflecting surfaces contributing to light arriving at a certain point on the plane 5 a are controlled not to different inclinations, but to the same inclination (the same posture).
- the angle information of light caused by inclinations of the mirror elements SE 1 of the spatial light modulator 3 a is converted into position information on the plane 5 a being a Fourier transform plane, by the optical Fourier transform action of the zoom optical system 4 .
- angle information of light on the Fourier transform plane 5 a is converted into position information on the arrangement plane of the mirror elements SE 1 of the spatial light modulator 3 a .
- NA divergence angle
- selection of settings of mirror elements and inclinations thereof can be done without any restrictions on which mirror element SE 1 should be set at which inclination out of the plurality of mirror elements SE 1 , for setting the light intensity distribution (pupil luminance distribution) formed on the plane 5 a , to a desired distribution.
- FIGS. 5A and 5B are drawings for schematically explaining another example of the method for multilevel control of the pupil intensity distribution.
- FIG. 5A is a matrix showing an example of the light intensity distribution (pupil intensity distribution) of 4-valued expression where the illumination pupil plane is composed of 15 pixels in 3 rows ⁇ 5 columns
- FIG. 5B is a drawing for schematically explaining assignment of light necessary for obtaining the multilevel light intensity distribution shown in FIG. 5A .
- the example shown in FIGS. 5A and 5B showed the division of 15 pixels of 3 ⁇ 5 pixels for the illumination pupil plane in order to simplify the description, but the number of divisions of the illumination pupil plane does not have to be limited to 15, and may be a larger number of divisions, e.g., 40 ⁇ 40 pixels, 128 ⁇ 128 pixels, and so on. Furthermore, the example shown in FIGS. 5A and 5B showed the multilevel expression of the light intensity distribution formed on the illumination pupil plane, based on the multiple values of four levels, but the multilevels do not have to be limited to the four levels, and can be any of various numbers of levels according to need, e.g., three levels, eight levels, and so on.
- the total number of reflecting surfaces necessary for formation of the desired light intensity distribution on the illumination pupil plane is not equal to the total number of mirror elements SE 1 of the spatial light modulator 3 a illuminated with the light from the light source 1 (which will be referred to hereinafter as an effective number of mirror elements), specifically, when there is a remainder when the effective number of mirror elements is divided by the total number of reflecting surfaces necessary for formation of the pupil intensity distribution on the illumination pupil plane, it is preferable that the light reflected on the remaining reflecting surfaces be directed to the region other than the illumination pupil plane.
- the illumination pupil plane is divided in 128 ⁇ 128 pixels and that reflected light from the remaining mirror elements is also guided to any of pixels forming the effective pupil constituting the light intensity distribution.
- the intensity unevenness of the light intensity distribution formed on the illumination pupil plane is given by
- , or ⁇ 3.7% ( ⁇ (1/27) ⁇ 100).
- the spatial light modulator with the plurality of optical elements arranged two-dimensionally and controlled individually had the structure in which each optical element was supported so as to be inclinable on a fulcrum at one support in the center thereof.
- the spatial light modulator in which the orientations (inclinations) of the reflecting surfaces arranged two-dimensionally can be individually controlled is used as the spatial light modulator with the plurality of optical elements arranged two-dimensionally and controlled individually.
- a spatial light modulator in which heights (positions) of the reflecting surfaces arranged two-dimensionally can be individually controlled is, for example, one selected from those disclosed in Japanese Patent Application Laid-open No. 6-281869 and U.S. Pat. No. 5,312,513 corresponding thereto, and in FIG. 1 d of Japanese Patent Application Laid-open (Translation of PCT Application) No.
- control unit may be configured to control the number of depressions and projections of the reflecting surfaces in the spatial light modulator (the posture control of the reflecting surfaces in the spatial light modulator by the control unit).
- the aforementioned spatial light modulator with the plurality of reflecting surfaces arranged two-dimensionally may be modified, for example, according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-513442 and U.S. Pat. No. 6,891,655 corresponding thereto, or according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2005-524112 and U.S. Patent Published Application No. 2005/0095749 corresponding thereto.
- the teachings of the U.S. Pat. No. 6,891,655 and the U.S. Patent Published Application No. 2005/0095749 are incorporated by reference.
- the apparatus may be modified so that in the formation of the light intensity distribution (pupil luminance distribution) on the illumination pupil plane using the spatial light modulator 3 , the light intensity distribution formed is measured with a light intensity distribution measuring device (pupil luminance distribution measuring device) and the spatial light modulator 3 is controlled according to the result of the measurement.
- a light intensity distribution measuring device piupil luminance distribution measuring device
- Such technology is disclosed, for example, in Japanese Patent Application Laid-open No. 2006-54328 and in Japanese Patent Application Laid-open No. 2003-22967 and U.S. Patent Published Application No. 2003/0038225 corresponding thereto.
- the teachings of the U.S. Patent Published Application No. 2003/0038225 are incorporated by reference.
- the mask can be replaced with a variable pattern forming device which forms a predetermined pattern on the basis of predetermined electronic data.
- the variable pattern forming device applicable herein is, for example, a spatial light modulator including a plurality of reflecting elements driven based on predetermined electronic data.
- the exposure apparatus with such a spatial light modulator is disclosed, for example, in Japanese Patent Application Laid-open No. 2004-304135 and International Publication WO 2006/080285 and U.S. Pat. Published Application No. 2007/0296936 corresponding thereto.
- the teachings of the U.S. Pat. Published Application No. 2007/0296936 are incorporated by reference.
- Besides the reflective spatial light modulators of the non-emission type it is also possible to use a transmissive spatial light modulator or a self-emission type image display device.
- a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 typically, a liquid
- a liquid immersion method it is possible to adopt one of the following techniques as a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No.
- the exposure apparatus of the foregoing embodiment is manufactured by assembling various sub-systems containing their respective components as set forth in the scope of claims in the present application, so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy.
- the following adjustments are carried out before and after the assembling: adjustment for achieving the optical accuracy for various optical systems; adjustment for achieving the mechanical accuracy for various mechanical systems; adjustment for achieving the electrical accuracy for various electrical systems.
- the assembling blocks from the various sub-systems into the exposure apparatus include mechanical connections, wire connections of electric circuits, pipe connections of pneumatic circuits, etc. between the various sub-systems.
- FIG. 6 is a flowchart for explaining manufacturing blocks of semiconductor devices, as the device manufacturing method according to an embodiment of the present invention.
- the manufacturing blocks of semiconductor devices include depositing a metal film on a wafer W to become a substrate of semiconductor devices (block S 40 ) and applying a photoresist as a photosensitive material onto the deposited metal film (block S 42 ).
- the subsequent blocks include transferring a pattern formed on a mask (reticle) M, into each shot area on the wafer W, using the exposure apparatus (projection exposure apparatus) of the foregoing embodiment (block S 44 : exposure block), and developing the wafer W after completion of the transfer, i.e., developing the photoresist to which the pattern has been transferred (block S 46 : development block). Thereafter, using the resist pattern made on the surface of the wafer W in block S 46 , as a mask, processing such as etching is carried out on the surface of the wafer W (block S 48 : processing block).
- the resist pattern herein is a photoresist layer in which depressions and projections are formed in a shape corresponding to the pattern transferred by the projection exposure apparatus of the foregoing embodiment and which the depressions penetrate throughout.
- Step S 48 is to process the surface of the wafer W through this resist pattern.
- the processing carried out in block S 48 includes, for example, at least either etching of the surface of the wafer W or deposition of a metal film or the like.
- the projection exposure apparatus of the foregoing embodiment performs the transfer of the pattern onto the wafer W coated with the photoresist, as a photosensitive substrate or plate P.
- FIG. 7 is a flowchart for explaining manufacturing blocks of a liquid crystal device such as a liquid-crystal display device, as the device manufacturing method according to another embodiment of the present invention.
- the manufacturing blocks of the liquid crystal device include sequentially performing a pattern forming block (block S 50 ), a color filter forming block (block S 52 ), a cell assembly block (block S 54 ), and a module assembly block (block S 56 ).
- the pattern forming block of block S 50 is to form predetermined patterns such as a circuit pattern and an electrode pattern on a glass substrate coated with a photoresist, as a plate P, using the projection exposure apparatus of the foregoing embodiment.
- This pattern forming block includes an exposure block of transferring a pattern to a photoresist layer, using the aforementioned projection exposure apparatus, a development block of performing development of the plate P onto which the pattern has been transferred, i.e., development of the photoresist layer on the glass substrate, and then making the photoresist layer in the shape corresponding to the pattern, and a processing block of processing the surface of the glass substrate through the developed photoresist layer.
- the color filter forming block of block S 52 is to form a color filter in which a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix pattern, or in which a plurality of filter sets of three stripes of R, G, and B are arrayed in a horizontal scan direction.
- the cell assembly block of block S 54 is to assemble a liquid crystal panel (liquid crystal cell), using the glass substrate on which the predetermined pattern has been formed in block S 50 , and the color filter formed in block S 52 . Specifically, for example, a liquid crystal is poured into between the glass substrate and the color filter to form the liquid crystal panel.
- the module assembly block of block S 56 is to attach various components such as electric circuits and backlights for display operation of this liquid crystal panel, to the liquid crystal panel assembled in block S 54 .
- An embodiment of the present invention is not limited only to the application to the exposure apparatus for manufacture of semiconductor devices, but can also be widely applied, for example, to the exposure apparatus for the liquid-crystal display devices formed with rectangular glass plates, or for display devices such as plasma displays, and to the exposure apparatus for manufacture of various devices such as imaging devices (CCDs and others), micromachines, thin-film magnetic heads, and DNA chips. Furthermore, an embodiment of the present invention is also applicable to the exposure block (exposure apparatus) for manufacture of masks (photomasks, reticles, etc.) with mask patterns of various devices thereon, by the photolithography process.
- the light (exposure light) supplied by the light source 1 can be an ArF excimer laser light (wavelength: 193 nm) or a KrF excimer laser light (wavelength: 248 nm).
- ArF excimer laser light wavelength: 193 nm
- KrF excimer laser light wavelength: 248 nm
- an embodiment of the present invention can also be applied to a generally-used illumination optical system which illuminates an illumination target surface except for the mask.
- an embodiment of the present invention successfully provides the multilevel pupil luminance distribution (pupil intensity distribution) in which luminances in respective zones are optionally controlled.
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Abstract
To optionally forming a multilevel light intensity distribution on an illumination pupil plane, the illumination apparatus implements Köller illumination on an illumination target surface, using as a light source the light intensity distribution formed on the illumination pupil plane on the basis of light from a light source. The illumination apparatus has a spatial light modulator, a condensing optical system, and a controller. The spatial light modulator has reflecting surfaces which are two-dimensionally arranged and postures of which can be controlled independently of each other. The condensing optical system condenses light from the reflecting surfaces to form a predetermined light intensity distribution on the illumination pupil plane. The controller controls the number of reflecting surfaces contributing to arriving light, for each of points on the illumination pupil plane forming the light intensity distribution, according to a light intensity distribution to be formed on the illumination pupil plane.
Description
- This application is a Continuation of U.S. application Ser. No. 14/664,576 filed Mar. 20, 2015, which is a Continuation of application Ser. No. 12/256,055 filed Oct. 22, 2008, which is based upon and claims the benefit of priority (priorities) from Provisional Application No. 60/996,295 filed Nov. 9, 2007 and Japanese Patent Application No. 2007-287987 filed Nov. 6, 2007, the entire contents of the prior applications being incorporated herein by reference.
- Field of the Invention
- An embodiment of the present invention relates to an illumination apparatus incorporating a spatial modulation unit for generating a predetermined light intensity distribution (pupil luminance distribution) on an illumination pupil plane on the basis of light from a light source, an illumination method using the spatial modulation unit, an exposure apparatus incorporating the illumination apparatus, and a device manufacturing method using the exposure apparatus.
- Related Background Art
- A reflection-type spatial light modulator is hitherto known as a spatial modulator to form a pupil luminance distribution for modified illumination (e.g., a dipolar, quadrupolar, or other distribution) in exposure apparatus. Such a reflection-type spatial light modulator is described, for example, in Japanese Patent Application Laid-open No. 2002-353105 (Document 1).
- There is also a recent trend to demand multilevel (3- or more-valued) distributions rather than a simple binary (presence/absence of light) distribution, as pupil luminance distributions for modified or off-axis illumination (e.g., cf. Patent Document 2: U.S. Pat. No. 6,466,304). In
Document 2, a multilevel pupil luminance distribution is obtained by placing a spatial filter with a number of transparent regions composed of a semitransparent substrate and a masking film, in the illumination pupil plane. - The inventor studied the foregoing conventional technology and found the following problem.
- Specifically, the above-cited
Document 1 discloses nothing about formation of the multilevel pupil luminance distribution. Since the technology in the above-citedDocument 2 uses the spatial filter to obtain the multilevel pupil luminance distribution, it fails to obtain a multilevel pupil luminance distribution in which luminances (light intensities) in respective zones on the illumination pupil plane are optionally controlled. - An embodiment of the present invention has been accomplished in order to solve the problem as described above, and provides an illumination apparatus and illumination method with a structure capable of forming a multilevel pupil luminance distribution in which luminances in respective zones on the illumination pupil plane are optionally controlled, and to provide an exposure apparatus incorporating the illumination apparatus and a device manufacturing method using the exposure apparatus.
- An embodiment of the present invention provides an illumination apparatus and illumination method which are configured to form a predetermined light intensity distribution on an illumination pupil plane on the basis of light from a light source, and to implement Köhler illumination on an illumination target surface using the predetermined light intensity distribution as a light source.
- In order to achieve the above object, an embodiment of the present invention provides an illumination apparatus which comprises a spatial light modulator, a condensing optical system, and a control unit. The spatial light modulator has a plurality of reflecting surfaces whose postures are controlled independently of each other. These reflecting surfaces are two-dimensionally arranged on an optical path of light traveling from a light source to an illumination pupil plane. The condensing optical system are arranged in a light path of light from the reflecting surfaces of the spatial light modulator to form a predetermined light intensity distribution on the illumination pupil plane. The condensing optical system condenses light from the reflecting surfaces of the spatial light modulator to form a predetermined light intensity distribution on the illumination pupil plane. The control unit feeds a control signal to the spatial light modulator in accordance with a light intensity distribution to be formed on the illumination pupil plane.
- Particularly, in an embodiment of the illumination apparatus, the condensing optical system converts light provided with a predetermined angle distribution by the reflecting surfaces of the spatial light modulator, into a position distribution on the illumination pupil plane. The control unit controls a number of the reflecting surfaces contributing to arriving light, for each of points on the illumination pupil plane constituting the light intensity distribution.
- An embodiment of the present invention provides an illumination method which comprises arrangement of a plurality of reflecting surfaces, arrangement of a condensing optical system, and posture control of the reflecting surfaces. The postures of the respective reflecting surfaces are controlled independently of each other and the reflecting surfaces are two-dimensionally arranged on an optical path of light traveling from a light source to an illumination pupil plane. The condensing optical system is arranged on an optical path of light traveling from the reflecting surfaces to the illumination pupil plane and functions to convert light provided with a predetermined angle distribution by the reflecting surfaces, into a position distribution on the illumination pupil plane. The posture control of the reflecting surfaces comprises first controlling a number of the reflecting surfaces contributing to arriving light, for each of points on the illumination pupil plane constituting the light intensity distribution, when the predetermined light intensity distribution is formed on the illumination pupil plane by condensing the light from the reflecting surfaces by the condensing optical system. The posture control is carried out for each group of reflecting surfaces controlled in this manner.
- An embodiment of the present invention provides an exposure apparatus which comprises the illumination apparatus with the structure as described above (an embodiment of the illumination apparatus according to the present invention) for illuminating a predetermined pattern, and performs exposure of the predetermined pattern on a photosensitive substrate.
- An embodiment of the present invention provides a device manufacturing method which is to manufacture a desired device, using the exposure apparatus with the structure as described above (an embodiment of the exposure apparatus according to the present invention). Specifically, the device manufacturing method comprises an exposure block, a development block, and a processing block. The exposure block is to effect the exposure of the predetermined pattern on the photosensitive substrate, using the exposure apparatus with the structure as described above. The development block is to develop the photosensitive substrate onto which the predetermined pattern has been transferred, and thereafter to form a mask layer in a shape corresponding to the predetermined pattern on a surface of the photosensitive substrate. The processing block is to process the surface of the photosensitive substrate through the mask layer.
- A general architecture that implements the various features of the invention will now be described with reference to the drawings. The drawings and the associated descriptions are provided to illustrate embodiments of the invention and not to limit the scope of the invention.
-
FIG. 1 is a drawing schematically showing a configuration of the exposure apparatus according to an embodiment of the present invention; -
FIG. 2 is an optical path diagram showing arrangement of a spatial light modulator and a condensing optical system, as a major part of the illumination apparatus and illumination method according to an embodiment of the present invention; -
FIGS. 3A to 3D are drawings schematically showing a configuration of the spatial light modulator shown inFIG. 2 ; -
FIG. 4 is a drawing for explaining an example of grouping of a plurality of mirror elements in the spatial light modulator shown inFIG. 2 ; -
FIGS. 5A and 5B are drawings for schematically explaining another example of a technique to control a pupil intensity distribution on a multilevel basis; -
FIG. 6 is a flowchart for explaining manufacturing blocks of semiconductor devices, as the device manufacturing method according to an embodiment of the present invention; and -
FIG. 7 is a flowchart for explaining manufacturing blocks of a liquid crystal device such as a liquid crystal display device, as the device manufacturing method according to another embodiment of the present invention. - In the following, embodiments of the illumination apparatus, illumination method, exposure apparatus, and device manufacturing method according to the present invention will be described below in detail with reference to
FIGS. 1 to 3, 3A to 3D, 4, 5A, 5B and 6 to 7 . In the description of the drawings, the same portions and the same elements will be denoted by the same reference symbols, without redundant description. -
FIG. 1 is a drawing schematically showing a configuration of the exposure apparatus according to an embodiment of the present invention. InFIG. 1 , the Z-axis is set along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane ofFIG. 1 in a plane of the wafer W, and the X-axis along a direction normal to the plane ofFIG. 1 in the plane of the wafer W. - Referring to
FIG. 1 , the exposure apparatus EA has an illumination apparatus IL, a mask stage MS supporting a mask M, a projection optical system PL, and a wafer stage WS supporting the wafer W. The illumination apparatus IL has alight source 1 and a spatial light modulation unit 3 arranged in the order named along the optical axis AX of the exposure apparatus EA. The exposure apparatus EA is configured to illuminate the mask M by means of the illumination apparatus IL on the basis of light from thelight source 1 and to project an image of a surface with a pattern thereon (first surface) of the mask M, onto a surface on the wafer W (second surface) by means of the projection optical system PL. The illumination apparatus IL, which illuminates the surface with the pattern thereon (first surface) of the mask M with the light supplied from thelight source 1, implements modified illumination (off-axis illumination), e.g., dipole, quadrupole, or other illumination by means of the spatial light modulation unit 3. - The illumination apparatus IL has a
polarization control unit 2, a spatial light modulation unit 3, a zoom optical system 4, a fly'seye lens 5, a condenseroptical system 6, an illumination field stop (mask blind) 7, and a field stop imagingoptical system 8 along the optical axis AX. - The spatial light modulation unit 3 forms a desired pupil luminance distribution (pupil intensity distribution) in its far field (Fraunhofer diffraction region), based on the light from the
light source 1 having traveled through thepolarization control unit 2. Aspatial light modulator 3 a of the spatial light modulation unit 3 is composed of a large number of mirror elements as described below, and the illumination apparatus IL also has acontrol unit 10 which outputs a control signal for controlling inclinations of these mirror elements, to thespatial light modulator 3 a. - The
polarization control unit 2 is disclosed, for example, in U.S. Patent Published Application No. 2006/0055834A1. The teachings of the U.S. Patent Published Application No. 2006/0055834A1 are incorporated by reference. - The fly's
eye lens 5 divides the wavefront of incident light and forms a secondary light source consisting of light source images as many as lens elements thereof on the rear focal plane of the fly'seye lens 5. The fly'seye lens 5 applicable herein is, for example, a cylindrical micro fly's eye lens. Such a cylindrical micro fly's eye lens is disclosed, for example, in U.S. Pat. No. 6,913,373. The teachings of the U.S. Pat. No. 6,913,373 are incorporated by reference. - In the exposure apparatus EA of the present embodiment, the mask M disposed on an illumination target surface is subjected to Köhler illumination, using the secondary light source formed by the fly's
eye lens 5, as a light source. Therefore, the plane where this secondary light source is formed becomes a plane conjugate with an aperture stop of the projection optical system PL and thus can be called an illumination pupil plane of the illumination apparatus IL. Typically, the illumination target surface (the surface where the mask M is arranged or the surface where the wafer W is arranged) becomes an optical Fourier transform surface with respect to the illumination pupil plane. - The pupil luminance distribution (which is also referred to as a pupil intensity distribution) is a light intensity distribution on the illumination pupil plane of the illumination apparatus IL or on a plane conjugate with the illumination pupil plane. However, when the number of wavefront divisions by the fly's
eye lens 5 is large, there is a high correlation between the global light intensity distribution formed on the entrance plane of the fly'seye lens 5 and the global light intensity distribution of the entire secondary light source, and, therefore, the light intensity distributions on the entrance plane of the fly'seye lens 5 and on the plane conjugate with the entrance plane can also be called pupil luminance distributions. - The condenser
optical system 6 condenses beams of light emitted from the fly'seye lens 5 and thereafter the condensed beams illuminate theillumination field stop 7 in a superimposed manner. The light from theillumination field stop 7 travels through the field stop imagingoptical system 8 to reach the mask M with the predetermined pattern thereon and to form an illumination region as an image of an aperture of theillumination field stop 7 in at least a part of the pattern-formed region of the mask M.FIG. 1 is depicted without any path bending mirror for bending the optical axis AX, but it is possible to arrange a path bending mirror or path bending mirrors as occasion may demand. The mask M is mounted on the mask stage MS. - The projection optical system PL forms an image of the first surface on a projection surface (second surface) Wa of the wafer W mounted on the wafer stage WS, based on light from the illumination region formed on the pattern surface (first surface) of the mask M by the illumination apparatus IL.
- In this manner, one-shot exposure or scan exposure is carried out while two-dimensionally driving and controlling the wafer stage WS and, therefore, two-dimensionally driving and controlling the wafer W, in the plane (X-Y plane) perpendicular to the optical axis AX of the projection optical system PL. This causes the pattern of the mask M to be sequentially transferred into each of exposure areas on the wafer W.
- The configuration of the spatial light modulation unit 3 will be described below with reference to
FIGS. 2 and 3 .FIG. 2 is an optical path diagram showing the spatial light modulation unit 3 and zoom optical system 4 shown inFIG. 1 .FIG. 3A is a partial perspective view of the spatiallight modulator 3 a in the spatial light modulation unit 3,FIG. 3B is a drawing for explaining parameters for control on the postures of the mirror elements,FIG. 3C is a partial perspective view showing one of the mirror elements in the spatiallight modulator 3 a, andFIG. 3D is a drawing showing a cross section along line I-I of the mirror element shown inFIG. 3C . It is noted thatFIGS. 2 and 3 are depicted without hatching for sections, for easier viewing. - As shown in
FIG. 2 , the spatial light modulation unit 3 has aprism 3 b, and the reflective spatiallight modulator 3 a attached integrally to theprism 3 b. Theprism 3 b is made of a glass material, e.g., fluorite. Theprism 3 b is of a shape in which one side face of a rectangular parallelepiped is depressed in a V-shaped wedge form, and is also called a K prism. In theprism 3 b, one side face of the rectangular parallelepiped part is composed of two planes PS1, PS2 (first and second planes PS1, PS2) intersecting at an obtuse angle as an intersecting line (straight line) P1 a between them subsides inside. The spatiallight modulator 3 a is attached onto a side face of theprism 3 b facing both of these two side faces in contact at the intersecting line P1 a. The optical material forming the base of the spatiallight modulator 3 a is not limited to fluorite, but it may be silica glass or other optical glass. - The two side faces (the sides facing each other) in contact at the intersecting line P1 a function as first and second reflecting surfaces R11, R12. Therefore, the first reflecting surface R11 is located on the first plane PS1. The second reflecting surface R12 is located on the second plane PS2 intersecting with the first plane PS1. The angle between the first and second reflecting surfaces R11, R12 is an obtuse angle.
- The angles herein may be determined, for example, as follows: the angle between the first and second reflecting surfaces R11, R12 is 120°; the angle between the side face (entrance plane IP) of the prism P1 perpendicular to the optical axis AX, and the first reflecting surface R11 is 60°; the angle between the side face (exit plane OP) of the prism P1 perpendicular to the optical axis AX, and the second reflecting surface R12 is 60°.
- The
prism 3 b is so arranged that the side face to which the spatiallight modulator 3 a is attached is parallel to the optical axis AX, that the first reflecting surface R11 is located on thelight source 1 side (upstream in the exposure apparatus EA), and that the second reflecting surface R12 is located on the fly'seye lens 5 side (downstream in the exposure apparatus EA). Therefore, the first reflecting surface R11 of theprism 3 b is obliquely arranged with respect to the optical axis AX of the exposure apparatus EA, as shown inFIG. 2 . The second reflecting surface R12 of theprism 3 b is also obliquely arranged with an opposite inclination to the first reflecting surface R11 with respect to the optical axis AX of the exposure apparatus EA, as shown inFIG. 2 . - The first reflecting surface R11 of the
prism 3 b reflects light incident in parallel with the optical axis AX of the exposure apparatus EA. The spatiallight modulator 3 a is arranged in the optical path between the first reflecting surface R11 and the second reflecting surface R12 and reflects the light reflected on the first reflecting surface R11. The second reflecting surface R12 of theprism 3 b reflects the light reflected on the spatiallight modulator 3 a. This light from the reflecting surface R12 is emitted, specifically, into the zoom optical system 4 in the illumination apparatus IL of the exposure apparatus EA. - Therefore, the intersecting line P1 a being a ridge line formed by the first and second planes PS1, PS2 is located on the spatial
light modulator 3 a side with respect to the first and second reflecting surfaces R11, R12. - The
prism 3 b in this embodiment is integrally formed of one optical block, but theprism 3 b may be constructed using a plurality of optical blocks. - The spatial
light modulator 3 a applies spatial modulation to the incident light, according to a position where the light reflected on the first reflecting surface R11 is incident. This spatiallight modulator 3 a, as described below, includes a large number of microscopic mirror elements SE1 arranged two-dimensionally on a predetermined plane. - For this reason, the light beam incident to the spatial
light modulator 3 a travels, for example, as follows: a ray L1 impinges upon a mirror element SE1 a out of the plurality of mirror elements SE1 of the spatiallight modulator 3 a ; a ray L2 impinges upon a mirror element SE1 b different from the mirror element SE1 a out of the plurality of mirror elements SE1 of the spatiallight modulator 3 a ; a ray L3 impinges upon a mirror element SE1 c different from the mirror elements SE1 a, SE1 b out of the plurality of mirror elements SE1 of the spatiallight modulator 3 a ; a ray L4 impinges upon a mirror element SE1 d different from the mirror elements SE1 a-SE1 c out of the plurality of mirror elements SE1 of the spatiallight modulator 3 a ; a ray L5 impinges upon a mirror element SE1 e different from the mirror elements SE1 a-SE1 d out of the plurality of mirror elements SE1 of the spatiallight modulator 3 a. The mirror elements SE1 a-SE1 e apply the spatial modulation according to the installation position of their own to the arriving rays L1-L5, respectively.FIG. 2 is depicted with illustration of only the five mirror elements SE1 a-SE1 e, for easier explanation, but the number of mirror elements does not have to be limited to five. - The
prism 3 b is so arranged that an air-equivalent length from the entrance plane IP of theprism 3 b (where the rays L1-L5 are incident) via the mirror elements SE1 a- SE1 e to the exit plane OP of theprism 3 b where the rays are outgoing, is equal to an air-equivalent length from a position corresponding to the entrance plane IP to a position corresponding to the exit plane OP without theprism 3 b in the exposure apparatus EA. An air-equivalent length is an optical path length obtained by reducing an optical path length in an optical system to one in air having the refractive index of 1, and an air-equivalent length in a medium having the refractive index n is obtained by multiplying an optical path length therein by 1/n. - The spatial
light modulator 3 a is arranged near the front focal point of the zoom optical system 4 which can be regarded as a condensing optical system. The light reflected by the mirror elements SE1 a-SE1 e of the spatiallight modulator 3 a and provided with a predetermined angle distribution forms a light intensity distribution at a predetermined position on the rearfocal plane 5 a of the zoom optical system 4. Namely, the zoom optical system 4 is a Fourier transform optical system which converts angles given to the emerging rays by the mirror elements SE1 a-SE1 e of the spatiallight modulator 3 a, into positions on theplane 5 a being the far field (Fraunhofer diffraction region) of the spatiallight modulator 3 a. The zoom optical system 4 applicable herein is, for example, a zoom optical system whose projection is an orthogonal projection. - Referring back to
FIG. 1 , the entrance plane of the fly'seye lens 5 is located near this plane Sa and the light intensity distribution (luminance distribution) of the secondary light source formed by the fly'seye lens 5 is a distribution according to the light intensity distribution formed by the spatiallight modulator 3 a and zoom optical system 4. - The spatial
light modulator 3 a, as shown inFIG. 3A , is a movable multi- mirror including the mirror elements SE1 being a large number of microscopic reflecting elements laid with their reflecting surface of a planar shape up. Each mirror element SE1 is movable and inclination of the reflecting surface thereof, i.e., an angle and direction of inclination of the reflecting surface, is independently controlled by the control unit 10 (posture control of the reflecting surfaces). Each mirror element SE1 can be continuously or discretely rotated by a desired angle of rotation around each of axes along two directions parallel to the reflecting surface thereof and orthogonal to each other. Namely, each mirror element SE1 is so configured that the inclination thereof can be controlled in two dimensions along the reflecting surface thereof. In the case of discrete rotation, a preferred control method is to control the angle of rotation in multiple stages (e.g., . . . , −2.5°, −2.0°, . . . , 0°, +0.5°, . . . , +2.5°, . . .). - The above-described posture control of the reflecting surface for each mirror element SE1 is implemented by adjusting an
angle 0 between a normal to a reference plane of the spatiallight modulator 3 a (z-axis) and a normal to the reflecting surface (z′ axis), as shown inFIG. 3B . The reference plane herein is a plane coincident with the reflecting surface before the posture control, which is an x-y plane defined by an x-axis and a y-axis orthogonal to the normal z′ to the reflecting surface before the posture control. The angle θ between the normal z (z-axis) to the reference plane and the normal z′ to the reflecting surface is given by a rotation angle component θx around the x-axis and a rotation angle component θy around the y-axis, as specific posture control information. Specifically, the rotation angle component θx is an angle between the normal z to the reference plane and the normal z′ to the reflecting surface when the normal z′ is projected onto the y-z plane, and the rotation angle component θy is an angle between the normal z to the reference plane and the normal z′ to the reflecting surface when the normal z′ is projected onto the x-z plane. - In addition, the contour of the mirror elements SE1 is square in this embodiment, but the contour is not limited to it. However, the contour is preferably a shape permitting arrangement without a gap (the closest packing) in terms of light utilization efficiency. The gap between adjacent mirror elements SE1 is preferably set to a necessary minimum level.
-
FIG. 3C is a drawing schematically showing a configuration of one mirror element out of the plurality of mirror elements SE1 of the spatiallight modulator 3 a and, more specifically, a drawing schematically showing a drive unit for controlling the posture of the reflecting surface in the mirror element SE1.FIG. 3D is a drawing showing a cross section of the mirror element SE1 along line I-I shown inFIG. 3C . InFIGS. 3C and 3D , the mirror element SE1 has abase 30, asupport 31 disposed on thisbase 30, aplate member 32 connected to thesupport 31 on the opposite side to thebase 30, a reflectingsurface 33 consisting of a reflecting film formed on thisplate member 32, and four electrodes 34 a-34 d arranged so as to surround thesupport 31 on thebase 30. - The
plate member 32 is inclinable around two axes (x-axis and y-axis) orthogonal to each other on a plane parallel to the base 30 with a fulcrum at a joint to thesupport 31. Then potentials are given to the electrodes 34 a-34 d arranged at respective positions on the base side corresponding to the four corners of theplate member 32, to generate an electrostatic force between each electrode 34 a-34 d and theplate member 32, thereby varying the gap between each electrode 34 a-34 d and the plate member 32 (drive unit). This causes theplate member 32 to be inclined on the fulcrum of thesupport 31 and, therefore, the reflectingsurface 33 formed on theplate member 32 is inclined. - Now, multilevel control of the light intensity distribution (pupil luminance distribution) formed on the illumination pupil plane will be explained referring back to
FIG. 2 . In the state of the spatiallight modulator 3 a shown inFIG. 2 , the mirror elements are arranged as follows: among the five mirror elements SE1 a-SE1 e, each of the three mirror elements SE1 a, SE1 c, SE1 e is inclined by a first angle (θx1, θy1) with respect to the reference plane of the spatiallight modulator 3 a ; each of the two mirror elements SE1 b, SE1 d is inclined by a second angle (θx2, θy2) different from the first angle with respect to the reference plane of the spatiallight modulator 3 a. - Accordingly, the reference plane of the spatial
light modulator 3 a (cf.FIG. 3B ) means a plane in which the large number of mirror elements SE1 of the spatiallight modulator 3 a are two-dimensionally arranged. The first angle and second angle are defined using rotation directions θx, θy around the rotation axes of two axes (x-axis and y-axis) orthogonal in the foregoing plane, as shown inFIG. 3B . - The rays L1, L3, L5 reflected on the three mirror elements SE1 a, SE1 c, SE1 e of the spatial
light modulator 3 a are reflected on the second reflecting surface R12 of theprism 3 b and thereafter are condensed by the zoom optical system 4. As a consequence, the rays L1, L3, L5 arrive at a point P1 on the rear focal plane Sa of the zoom optical system 4. On the other hand, the rays L2, L4 reflected on the two mirror elements SE1 b, SE1 d of the spatiallight modulator 3 a are reflected on the second reflecting surface R12 of theprism 3 b and thereafter are condensed by the zoom optical system 4. As a consequence, the rays L2, L4 arrive at a point P2 on the rearfocal plane 5 a of the zoom optical system 4. - In this manner, the rays from the three mirror elements SE1 a, SE1 c, SE1 e are focused at the point P1, while the rays from the two mirror elements SE1 b, SE1 d are focused at the point P2. As a result, a ratio of the light intensity at the point P1 to the light intensity at the point P2 is 3:2. Based on such relationship between the numbers of mirror elements and the light intensity ratio, the light intensity at a predetermined point (P1 or P2) is determined according to the number of reflecting surfaces (SE1 a, SE1 c, SE1 e or SE1 b, SE1 d) contributing to rays (L1, L3, L5 or L2, L4) arriving at the predetermined point (P1 or P2) on the rear
focal plane 5 a of the zoom optical system 4 which can be regarded as the illumination pupil plane. Namely, the light intensity distribution on theplane 5 a can be controlled to a desired distribution. In the configuration example shown inFIG. 2 , the light intensity distribution (pupil luminance distribution) formed on theplane 5 a is one in which the light intensity at the point P1 is 3, the light intensity at the point P2 is 2, and the light intensity in the other region is 0. - Therefore, when the control unit 10 (cf.
FIG. 1 ) to perform the posture control in the spatiallight modulator 3 a is configured to control the number of reflecting surfaces contributing to arriving light, for each point (e.g., P1 or P2) forming the light intensity distribution formed on theplane 5 a, the light intensity at the predetermined point (P1 or P2) on theplane 5 a can be set at a desired value and, in turn, the light intensity distribution on theplane 5 a can be optionally controlled on a multilevel basis. - Since in this embodiment the zoom optical system 4 has the optical Fourier transform action, the rays are superimposed at one point P1 on the rear
focal plane 5 a of the zoom optical system 4 even though the inclinations of the three mirror elements SE1 a, SE1 c, SE1 e are the same first angle (θx1, θy1); and the rays are also superimposed at one point P2 on the rearfocal plane 5 a of the zoom optical system 4 even though the inclinations of the two mirror elements SE1 b, SE1 d are the same second angle (θx2, θy2). In this embodiment, as described above, the inclinations of the reflecting surfaces contributing to light arriving at a certain point on theplane 5 a are controlled not to different inclinations, but to the same inclination (the same posture). - In this embodiment, the angle information of light caused by inclinations of the mirror elements SE1 of the spatial
light modulator 3 a is converted into position information on theplane 5 a being a Fourier transform plane, by the optical Fourier transform action of the zoom optical system 4. Conversely, angle information of light on theFourier transform plane 5 a is converted into position information on the arrangement plane of the mirror elements SE1 of the spatiallight modulator 3 a. As a result, the divergence angle (NA) of beams reaching theplane 5 a which can be regarded as the illumination pupil plane is effectively prevented from varying in theplane 5 a. In addition, selection of settings of mirror elements and inclinations thereof can be done without any restrictions on which mirror element SE1 should be set at which inclination out of the plurality of mirror elements SE1, for setting the light intensity distribution (pupil luminance distribution) formed on theplane 5 a, to a desired distribution. - For example, it is also possible to adopt a method of grouping the plurality of mirror elements SE1 of the spatial
light modulator 3 a into a plurality of mirror element groups 35 a-35 i and letting the mirror element groups 35 a-35 i form their respective light intensity distributions (pupil luminance distributions) on theplane 5 a, as shown inFIG. 4 . It is also possible to adopt another method of assigning the plurality of mirror elements SE1 of the spatiallight modulator 3 a completely at random. -
FIGS. 5A and 5B are drawings for schematically explaining another example of the method for multilevel control of the pupil intensity distribution. Specifically,FIG. 5A is a matrix showing an example of the light intensity distribution (pupil intensity distribution) of 4-valued expression where the illumination pupil plane is composed of 15 pixels in 3 rows×5 columns, andFIG. 5B is a drawing for schematically explaining assignment of light necessary for obtaining the multilevel light intensity distribution shown inFIG. 5A . - For example, for obtaining the light intensity of the leftmost bottom pixel on the matrix shown in
FIG. 5A , light energies PE1-PE4 from four mirror elements of the spatiallight modulator 3 a are superimposed on the leftmost bottom pixel to obtain intensity 4, as shown inFIG. 5B . Similarly, for obtaining the light intensity of the leftmost top pixel on the matrix shown inFIG. 5A , light energies PE5, PE6 from two mirror elements of the spatiallight modulator 3 a are superimposed on the leftmost top pixel to obtainintensity 2, as shownFIG. 5B . - In this manner, it becomes feasible to control the value of light intensity at a predetermined point on the
plane 5 a in multiple levels (four levels in the case ofFIGS. 5A and 5B ), by controlling the number of reflecting surfaces contributing to light arriving at the predetermined point on theplane 5 a. - The example shown in
FIGS. 5A and 5B showed the division of 15 pixels of 3×5 pixels for the illumination pupil plane in order to simplify the description, but the number of divisions of the illumination pupil plane does not have to be limited to 15, and may be a larger number of divisions, e.g., 40×40 pixels, 128×128 pixels, and so on. Furthermore, the example shown inFIGS. 5A and 5B showed the multilevel expression of the light intensity distribution formed on the illumination pupil plane, based on the multiple values of four levels, but the multilevels do not have to be limited to the four levels, and can be any of various numbers of levels according to need, e.g., three levels, eight levels, and so on. - When the total number of reflecting surfaces necessary for formation of the desired light intensity distribution on the illumination pupil plane is not equal to the total number of mirror elements SE1 of the spatial
light modulator 3 a illuminated with the light from the light source 1 (which will be referred to hereinafter as an effective number of mirror elements), specifically, when there is a remainder when the effective number of mirror elements is divided by the total number of reflecting surfaces necessary for formation of the pupil intensity distribution on the illumination pupil plane, it is preferable that the light reflected on the remaining reflecting surfaces be directed to the region other than the illumination pupil plane. - When the light reflected on the remaining reflecting surfaces is averagely scattered over the light intensity distribution formed on the illumination pupil plane, intensity unevenness will occur in this light intensity distribution. For example, let the effective number of mirror elements be 169760 and the total number of reflecting surfaces necessary for formation of the light intensity distribution be 12861; then the remainder is 2567. Namely, the number of mirror elements regarded as one reflecting surface is 13 (169760=12861×13+2567) and light reflected from these thirteen mirror elements arrives at one point on the illumination pupil plane.
- Let us suppose that the illumination pupil plane is divided in 128×128 pixels and that reflected light from the remaining mirror elements is also guided to any of pixels forming the effective pupil constituting the light intensity distribution. In this case there are pixels at which reflected light from thirteen mirror elements arrives and pixels at which reflected light from fourteen mirror elements arrives, in the effective pupil. In this example, the intensity unevenness of the light intensity distribution formed on the illumination pupil plane is given by |(14−13)/(14+13)|=|1/27|, or ±3.7% (=±(1/27)×100). On the other hand, since the rate of the remainder to the effective number of mirror elements is 1.5% (=(2567/169760)×100), a reduction in illuminance on the entire effective pupil is just 1.5% even in the case where the reflected light from the 2567 remaining mirror elements is guided to the outside region of the effective pupil. Therefore, when the reflected light from the 2567 remaining mirror elements is intentionally guided to the region other than the effective region, the intensity unevenness of the light intensity distribution formed on the illumination pupil plane can be reduced by 3.7%.
- In the above embodiment, the spatial light modulator with the plurality of optical elements arranged two-dimensionally and controlled individually had the structure in which each optical element was supported so as to be inclinable on a fulcrum at one support in the center thereof. However, it is also possible to adopt a structure in which each of the optical elements in the spatial light modulator is supported in the peripheral region.
- In the above embodiment, the spatial light modulator in which the orientations (inclinations) of the reflecting surfaces arranged two-dimensionally can be individually controlled is used as the spatial light modulator with the plurality of optical elements arranged two-dimensionally and controlled individually. However, without having to be limited to this, it is also possible, for example, to use a spatial light modulator in which heights (positions) of the reflecting surfaces arranged two-dimensionally can be individually controlled. Such a spatial light modulator applicable herein is, for example, one selected from those disclosed in Japanese Patent Application Laid-open No. 6-281869 and U.S. Pat. No. 5,312,513 corresponding thereto, and in
FIG. 1d of Japanese Patent Application Laid-open (Translation of PCT Application) No. 2004-520618 and U.S. Pat. No. 6,885,493 corresponding thereto. The teachings of the U.S. Pat. Nos. 5,312,513 and 6,885,493 are incorporated by reference. These spatial light modulators are able to apply the same action as a diffracting surface, to incident light by forming a two-dimensional height distribution therein. In this case, the control unit may be configured to control the number of depressions and projections of the reflecting surfaces in the spatial light modulator (the posture control of the reflecting surfaces in the spatial light modulator by the control unit). - The aforementioned spatial light modulator with the plurality of reflecting surfaces arranged two-dimensionally may be modified, for example, according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-513442 and U.S. Pat. No. 6,891,655 corresponding thereto, or according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2005-524112 and U.S. Patent Published Application No. 2005/0095749 corresponding thereto. The teachings of the U.S. Pat. No. 6,891,655 and the U.S. Patent Published Application No. 2005/0095749 are incorporated by reference.
- In the above-described embodiment and modification examples, the apparatus may be modified so that in the formation of the light intensity distribution (pupil luminance distribution) on the illumination pupil plane using the spatial light modulator 3, the light intensity distribution formed is measured with a light intensity distribution measuring device (pupil luminance distribution measuring device) and the spatial light modulator 3 is controlled according to the result of the measurement. Such technology is disclosed, for example, in Japanese Patent Application Laid-open No. 2006-54328 and in Japanese Patent Application Laid-open No. 2003-22967 and U.S. Patent Published Application No. 2003/0038225 corresponding thereto. The teachings of the U.S. Patent Published Application No. 2003/0038225 are incorporated by reference.
- In the aforementioned embodiment, the mask can be replaced with a variable pattern forming device which forms a predetermined pattern on the basis of predetermined electronic data. The variable pattern forming device applicable herein is, for example, a spatial light modulator including a plurality of reflecting elements driven based on predetermined electronic data. The exposure apparatus with such a spatial light modulator is disclosed, for example, in Japanese Patent Application Laid-open No. 2004-304135 and International Publication WO 2006/080285 and U.S. Pat. Published Application No. 2007/0296936 corresponding thereto. The teachings of the U.S. Pat. Published Application No. 2007/0296936 are incorporated by reference. Besides the reflective spatial light modulators of the non-emission type, it is also possible to use a transmissive spatial light modulator or a self-emission type image display device.
- In the foregoing embodiment, it is also possible to apply a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 (typically, a liquid), which is so called a liquid immersion method. In this case, it is possible to adopt one of the following techniques as a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No. 6-124873; the technique of forming a liquid bath of a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-open No. 10-303114, and so on. The teachings of the International Publication WO99/49504, and the Japanese Patent Application Laid-open Nos. 6-124873 and 10-303114 are incorporated by reference.
- The exposure apparatus of the foregoing embodiment is manufactured by assembling various sub-systems containing their respective components as set forth in the scope of claims in the present application, so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. For ensuring these various accuracies, the following adjustments are carried out before and after the assembling: adjustment for achieving the optical accuracy for various optical systems; adjustment for achieving the mechanical accuracy for various mechanical systems; adjustment for achieving the electrical accuracy for various electrical systems. The assembling blocks from the various sub-systems into the exposure apparatus include mechanical connections, wire connections of electric circuits, pipe connections of pneumatic circuits, etc. between the various sub-systems. It is needless to mention that there are assembling blocks of the individual sub-systems, before the assembling blocks from the various sub-systems into the exposure apparatus. After completion of the assembling blocks from the various sub-systems into the exposure apparatus, overall adjustment is carried out to ensure various accuracies as the entire exposure apparatus. The manufacture of exposure apparatus is desirably performed in a clean room in which the temperature, cleanliness, etc. are controlled.
- The following will describe a device manufacturing method using the exposure apparatus according to the above-described embodiment.
FIG. 6 is a flowchart for explaining manufacturing blocks of semiconductor devices, as the device manufacturing method according to an embodiment of the present invention. As shown inFIG. 6 , the manufacturing blocks of semiconductor devices include depositing a metal film on a wafer W to become a substrate of semiconductor devices (block S40) and applying a photoresist as a photosensitive material onto the deposited metal film (block S42). The subsequent blocks include transferring a pattern formed on a mask (reticle) M, into each shot area on the wafer W, using the exposure apparatus (projection exposure apparatus) of the foregoing embodiment (block S44: exposure block), and developing the wafer W after completion of the transfer, i.e., developing the photoresist to which the pattern has been transferred (block S46: development block). Thereafter, using the resist pattern made on the surface of the wafer W in block S46, as a mask, processing such as etching is carried out on the surface of the wafer W (block S48: processing block). - The resist pattern herein is a photoresist layer in which depressions and projections are formed in a shape corresponding to the pattern transferred by the projection exposure apparatus of the foregoing embodiment and which the depressions penetrate throughout. Step S48 is to process the surface of the wafer W through this resist pattern. The processing carried out in block S48 includes, for example, at least either etching of the surface of the wafer W or deposition of a metal film or the like. In block S44, the projection exposure apparatus of the foregoing embodiment performs the transfer of the pattern onto the wafer W coated with the photoresist, as a photosensitive substrate or plate P.
-
FIG. 7 is a flowchart for explaining manufacturing blocks of a liquid crystal device such as a liquid-crystal display device, as the device manufacturing method according to another embodiment of the present invention. As shown inFIG. 7 , the manufacturing blocks of the liquid crystal device include sequentially performing a pattern forming block (block S50), a color filter forming block (block S52), a cell assembly block (block S54), and a module assembly block (block S56). - The pattern forming block of block S50 is to form predetermined patterns such as a circuit pattern and an electrode pattern on a glass substrate coated with a photoresist, as a plate P, using the projection exposure apparatus of the foregoing embodiment. This pattern forming block includes an exposure block of transferring a pattern to a photoresist layer, using the aforementioned projection exposure apparatus, a development block of performing development of the plate P onto which the pattern has been transferred, i.e., development of the photoresist layer on the glass substrate, and then making the photoresist layer in the shape corresponding to the pattern, and a processing block of processing the surface of the glass substrate through the developed photoresist layer.
- The color filter forming block of block S52 is to form a color filter in which a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix pattern, or in which a plurality of filter sets of three stripes of R, G, and B are arrayed in a horizontal scan direction.
- The cell assembly block of block S54 is to assemble a liquid crystal panel (liquid crystal cell), using the glass substrate on which the predetermined pattern has been formed in block S50, and the color filter formed in block S52. Specifically, for example, a liquid crystal is poured into between the glass substrate and the color filter to form the liquid crystal panel. The module assembly block of block S56 is to attach various components such as electric circuits and backlights for display operation of this liquid crystal panel, to the liquid crystal panel assembled in block S54.
- An embodiment of the present invention is not limited only to the application to the exposure apparatus for manufacture of semiconductor devices, but can also be widely applied, for example, to the exposure apparatus for the liquid-crystal display devices formed with rectangular glass plates, or for display devices such as plasma displays, and to the exposure apparatus for manufacture of various devices such as imaging devices (CCDs and others), micromachines, thin-film magnetic heads, and DNA chips. Furthermore, an embodiment of the present invention is also applicable to the exposure block (exposure apparatus) for manufacture of masks (photomasks, reticles, etc.) with mask patterns of various devices thereon, by the photolithography process.
- In the above-described embodiment, the light (exposure light) supplied by the
light source 1 can be an ArF excimer laser light (wavelength: 193 nm) or a KrF excimer laser light (wavelength: 248 nm). However, without having to be limited to this, it is also possible to use any other appropriate laser light source, e.g., an F2 laser light source which supplies laser light at the wavelength of 157 nm. - The aforementioned embodiment was the application of the present invention to the illumination optical system illuminating the mask in the exposure apparatus, but, without having to be limited to this, an embodiment of the present invention can also be applied to a generally-used illumination optical system which illuminates an illumination target surface except for the mask.
- As described above, an embodiment of the present invention successfully provides the multilevel pupil luminance distribution (pupil intensity distribution) in which luminances in respective zones are optionally controlled.
- As described above, the present invention can be modified in various ways without departing from the scope and spirit of the present invention, without having to be limited to the above embodiments.
Claims (1)
1. An illumination apparatus which illuminates an illumination target surface with light from a light source, the illumination apparatus comprising:
a spatial light modulator with a plurality of reflecting surfaces arranged two- dimensionally, postures of the respective reflecting surfaces being controlled independently of each other;
a first condensing optical system configured to condense light from the plurality of reflecting surfaces of the spatial light modulator onto a predetermined surface in an optical path of the illumination apparatus;
a fly's eye optical system with a plurality of optical surfaces arranged two- dimensionally on the predetermined surface, configured to form a light intensity distribution on an illumination pupil plane by light from the first condensing optical system; and
a controller configured to control the plurality of reflecting surfaces of the spatial light modulator, wherein
the controller controls postures of the plurality of reflecting surfaces so that light from a first reflecting surface and light from a second reflecting surface different from the first reflecting surface overlap on the predetermined surface after passing through the first condensing optical system, both the first and second reflecting surfaces being included in the plurality of reflecting surfaces.
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| US15/599,017 US20170255005A1 (en) | 2007-11-06 | 2017-05-18 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
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| JP2007287987 | 2007-11-06 | ||
| JP2007-287987 | 2007-11-06 | ||
| US99629507P | 2007-11-09 | 2007-11-09 | |
| US12/256,055 US9116346B2 (en) | 2007-11-06 | 2008-10-22 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| US14/664,576 US9678332B2 (en) | 2007-11-06 | 2015-03-20 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| US15/599,017 US20170255005A1 (en) | 2007-11-06 | 2017-05-18 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
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| US14/664,576 Continuation US9678332B2 (en) | 2007-11-06 | 2015-03-20 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
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| US14/664,576 Active US9678332B2 (en) | 2007-11-06 | 2015-03-20 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| US15/599,017 Abandoned US20170255005A1 (en) | 2007-11-06 | 2017-05-18 | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
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| EP (1) | EP2208104A1 (en) |
| JP (1) | JP5447369B2 (en) |
| KR (4) | KR101644762B1 (en) |
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| US12066176B2 (en) | 2020-03-09 | 2024-08-20 | Lg Innotek Co., Ltd. | Lighting module and lighting device comprising same |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101503992B1 (en) * | 2003-04-09 | 2015-03-18 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| TWI511179B (en) | 2003-10-28 | 2015-12-01 | 尼康股份有限公司 | Optical illumination device, exposure device, exposure method and device manufacturing method |
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| TWI453796B (en) * | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Polarization changing unit and component manufacturing method |
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| US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| WO2011078070A1 (en) | 2009-12-23 | 2011-06-30 | 株式会社ニコン | Spatial light modulator unit, illumination optical system, exposure device, and device manufacturing method |
| US20110205519A1 (en) | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP2013527988A (en) * | 2010-05-06 | 2013-07-04 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system of microlithographic projection exposure apparatus |
| DE102010029339A1 (en) | 2010-05-27 | 2011-12-01 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method |
| JP2012004465A (en) | 2010-06-19 | 2012-01-05 | Nikon Corp | Illumination optical system, exposure equipment, and device manufacturing method |
| WO2012028158A1 (en) | 2010-08-30 | 2012-03-08 | Carl Zeiss Smt Gmbh | Illumination system of a microlithographic projection exposure apparatus |
| US8917989B2 (en) * | 2011-01-05 | 2014-12-23 | Verizon Patent And Licensing Inc. | Dynamic communication splitter |
| JP6016169B2 (en) | 2011-01-29 | 2016-10-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system of microlithographic projection exposure apparatus |
| DE102011004326A1 (en) * | 2011-02-17 | 2012-08-23 | Carl Zeiss Smt Gmbh | Optical assembly for projection exposure system used in manufacture of micro structured component, has controllably driven components to control reflected partial beams so that beam intensity distribution variations of light is varied |
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| JP6120001B2 (en) * | 2011-10-24 | 2017-04-26 | 株式会社ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| JP2014123600A (en) * | 2012-12-20 | 2014-07-03 | Nikon Corp | Optical integrator, illumination unit, transmission optical system, illumination optical system, exposure device, and device manufacturing method |
| JP6183635B2 (en) * | 2012-12-25 | 2017-08-23 | 株式会社ニコン | Optical integrator, illumination unit, transmission optical system, illumination optical system, exposure apparatus, and device manufacturing method |
| JP6114952B2 (en) | 2013-01-17 | 2017-04-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Method for transferring a pattern onto a photosensitive surface by lithography and illumination system of a microlithographic projection exposure apparatus |
| US9581910B2 (en) | 2013-01-17 | 2017-02-28 | Carl Zeiss Smt Gmbh | Method of lithographically transferring a pattern on a light sensitive surface and illumination system of a microlithographic projection exposure apparatus |
| DE102013214459B4 (en) | 2013-07-24 | 2015-07-16 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus |
| EP2876498B1 (en) * | 2013-11-22 | 2017-05-24 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| DE102015214477A1 (en) | 2015-07-30 | 2016-06-16 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method |
| JP6643466B2 (en) | 2015-09-23 | 2020-02-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Method of operating a microlithographic projection apparatus and an illumination system for such an apparatus |
| CN107144948A (en) * | 2017-06-15 | 2017-09-08 | 中国科学院西安光学精密机械研究所 | Spatial light modulator coupling device based on triangular reflector |
| DE102017210162A1 (en) | 2017-06-19 | 2017-08-17 | Carl Zeiss Smt Gmbh | Illumination optics for EUV projection lithography |
| US10935782B2 (en) * | 2017-12-14 | 2021-03-02 | Boe Technology Group Co., Ltd. | Display apparatus, assembly for adaptively modulating display contrast of display apparatus, and method of adaptively modulating display contrast of display apparatus |
| JP7267761B2 (en) * | 2019-01-31 | 2023-05-02 | キヤノン株式会社 | Light source device, illumination device, exposure device, and method for manufacturing article |
| JP7184166B2 (en) * | 2019-03-29 | 2022-12-06 | 株式会社ニコン | Determination method, determination device, exposure device and program |
| CN111856745B (en) * | 2019-04-30 | 2023-03-17 | 上海微电子装备(集团)股份有限公司 | Light irradiation device |
| DE102021209734A1 (en) | 2021-09-03 | 2022-09-22 | Carl Zeiss Smt Gmbh | Outcoupling device, method for diverting external radiation, illumination systems, device for providing and forwarding projection radiation for an illumination system and lithography system |
| DE102022209214A1 (en) * | 2022-09-05 | 2024-03-07 | Carl Zeiss Smt Gmbh | Individual mirror of a pupil facet mirror and pupil facet mirror for an illumination optics of a projection exposure system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070016520A1 (en) * | 2002-12-30 | 2007-01-18 | Gang John E | System and method for facilitating sale of a loan to a secondary market purchaser |
| US20090012888A1 (en) * | 2002-10-22 | 2009-01-08 | Koninklijke Kpn N.V. | Text-to-speech streaming via a network |
Family Cites Families (885)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3293882B2 (en) | 1992-03-27 | 2002-06-17 | 株式会社東芝 | Projection exposure equipment |
| JPS444993Y1 (en) | 1964-05-28 | 1969-02-24 | ||
| US4320770A (en) | 1979-05-03 | 1982-03-23 | Trans-Med Corporation | Diagnostic specimen collector |
| ATE1462T1 (en) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | OPTICAL LITHOGRAPHY PROCESS AND DEVICE FOR COPYING A PATTERN ONTO A SEMICONDUCTOR DISC. |
| FR2474708B1 (en) | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57152129A (en) | 1981-03-13 | 1982-09-20 | Sanyo Electric Co Ltd | Developing method of resist |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS5849932A (en) | 1981-09-21 | 1983-03-24 | Ushio Inc | Adjuster for illuminance distribution pattern |
| JPS5845502U (en) | 1981-09-21 | 1983-03-26 | 株式会社津山金属製作所 | wide angle reflector |
| JPS58115945A (en) | 1981-12-29 | 1983-07-09 | Toyoda Gosei Co Ltd | Power transmission and signal transmission and reception method to steering section |
| JPS58184937A (en) | 1982-04-23 | 1983-10-28 | Konishiroku Photo Ind Co Ltd | Driving controller of aperture diaphragm of camera |
| JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | exposure equipment |
| DD206607A1 (en) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS |
| JPS5919912A (en) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | Immersion distance holding device |
| DD242880A1 (en) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
| JPS59226317A (en) | 1983-06-06 | 1984-12-19 | Nippon Kogaku Kk <Nikon> | Illuminating device |
| DD221563A1 (en) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
| JPS59155843A (en) | 1984-01-27 | 1984-09-05 | Hitachi Ltd | Exposing device |
| DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
| JPS60229606A (en) | 1984-04-27 | 1985-11-15 | 株式会社日立製作所 | gas insulated switchgear |
| JPS6144429A (en) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | Alignment method |
| JPS6145923A (en) | 1984-08-10 | 1986-03-06 | Aronshiya:Kk | Manufacture of rotary disk for reflection type rotary encoder |
| JPH0682598B2 (en) | 1984-10-11 | 1994-10-19 | 日本電信電話株式会社 | Projection exposure device |
| JPS61217434A (en) | 1985-03-20 | 1986-09-27 | Mitsubishi Chem Ind Ltd | Conveying device |
| JPS6194342U (en) | 1984-11-27 | 1986-06-18 | ||
| JPS61156736A (en) | 1984-12-27 | 1986-07-16 | Canon Inc | exposure equipment |
| JPS61196532A (en) | 1985-02-26 | 1986-08-30 | Canon Inc | Exposure device |
| JPS61251025A (en) | 1985-04-30 | 1986-11-08 | Canon Inc | Projection exposing apparatus |
| JPS61270049A (en) | 1985-05-24 | 1986-11-29 | Toshiba Corp | Table device |
| JPS622539A (en) | 1985-06-28 | 1987-01-08 | Canon Inc | Illumination optical system |
| JPS622540A (en) | 1985-06-28 | 1987-01-08 | Canon Inc | Light integrator and Koehler lighting system including it |
| US4683420A (en) | 1985-07-10 | 1987-07-28 | Westinghouse Electric Corp. | Acousto-optic system for testing high speed circuits |
| JPS6217705A (en) | 1985-07-16 | 1987-01-26 | Nippon Kogaku Kk <Nikon> | Illumination device for telecentric optical system |
| JPS6265326A (en) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | Exposure device |
| JPS62100161A (en) | 1985-10-23 | 1987-05-09 | Shin Etsu Chem Co Ltd | Planar motor |
| JPS62120026A (en) | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | X-ray exposing apparatus |
| JPS62121417A (en) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | Immersion objective lens device |
| JPH07105323B2 (en) | 1985-11-22 | 1995-11-13 | 株式会社日立製作所 | Exposure method |
| JPS62153710A (en) | 1985-12-27 | 1987-07-08 | Furukawa Alum Co Ltd | Preparation of reflective substrate for rotary encoder |
| JPH0782981B2 (en) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | Projection exposure method and apparatus |
| JPS62188316A (en) | 1986-02-14 | 1987-08-17 | Canon Inc | Projection exposure device |
| JPS62203526A (en) | 1986-02-28 | 1987-09-08 | トヨタ自動車株式会社 | Radio power transmitter |
| JP2506616B2 (en) | 1986-07-02 | 1996-06-12 | キヤノン株式会社 | Exposure apparatus and circuit manufacturing method using the same |
| JPS6336526A (en) | 1986-07-30 | 1988-02-17 | Oki Electric Ind Co Ltd | Wafer exposure equipment |
| JPH0695511B2 (en) | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | Washing and drying treatment method |
| JPS63128713A (en) | 1986-11-19 | 1988-06-01 | Matsushita Electric Ind Co Ltd | Correction of distortion in scanning aligner |
| JPS63131008A (en) | 1986-11-20 | 1988-06-03 | Fujitsu Ltd | Optical alignment method |
| JPS63141313A (en) | 1986-12-03 | 1988-06-13 | Hitachi Ltd | Thin plate deforming device |
| JPS63157419A (en) | 1986-12-22 | 1988-06-30 | Toshiba Corp | Fine pattern transfer apparatus |
| JPS63160192A (en) | 1986-12-23 | 1988-07-02 | 株式会社明電舎 | Connecting conductor of radio frequency heater |
| JPS63231217A (en) | 1987-03-19 | 1988-09-27 | Omron Tateisi Electronics Co | Measuring instrument for movement quantity |
| JPH0718699B2 (en) | 1987-05-08 | 1995-03-06 | 株式会社ニコン | Surface displacement detector |
| JPS6426704A (en) | 1987-05-11 | 1989-01-30 | Jiei Shirinian Jiyon | Pocket structure of garment |
| JPS63292005A (en) | 1987-05-25 | 1988-11-29 | Nikon Corp | Travel amount detection device with running error correction |
| JPH07117371B2 (en) | 1987-07-14 | 1995-12-18 | 株式会社ニコン | measuring device |
| JPS6468926A (en) | 1987-09-09 | 1989-03-15 | Nikon Corp | Measurement of image distortion in projection optical system |
| JPH0191419A (en) | 1987-10-01 | 1989-04-11 | Canon Inc | Aligner |
| JPH01115033A (en) | 1987-10-28 | 1989-05-08 | Hitachi Ltd | Gas discharge display device |
| JPH01147516A (en) | 1987-12-04 | 1989-06-09 | Canon Inc | Beam position controller |
| JP2728133B2 (en) | 1987-12-09 | 1998-03-18 | 株式会社リコー | Digital image forming equipment |
| JPH01202833A (en) | 1988-02-09 | 1989-08-15 | Toshiba Corp | High precision XY stage device |
| JPH0831513B2 (en) | 1988-02-22 | 1996-03-27 | 株式会社ニコン | Substrate suction device |
| JPH0545102Y2 (en) | 1988-02-24 | 1993-11-17 | ||
| JPH01255404A (en) | 1988-04-05 | 1989-10-12 | Toshiba Corp | Electromagnet device for levitation |
| JPH01276043A (en) | 1988-04-28 | 1989-11-06 | Mitsubishi Cable Ind Ltd | Waveguide type liquid detector |
| JPH01278240A (en) | 1988-04-28 | 1989-11-08 | Tokyo Electron Ltd | Uninterruptible power source for apparatus for manufacture of semiconductor |
| JPH01286478A (en) | 1988-05-13 | 1989-11-17 | Hitachi Ltd | Beam uniformizing optical system and manufacture thereof |
| JPH01292343A (en) | 1988-05-19 | 1989-11-24 | Fujitsu Ltd | Pellicle |
| JPH01314247A (en) | 1988-06-13 | 1989-12-19 | Fuji Plant Kogyo Kk | Automatic exposing device for printed circuit board |
| JPH0831514B2 (en) | 1988-06-21 | 1996-03-27 | 株式会社ニコン | Substrate suction device |
| JPH0242382A (en) | 1988-08-02 | 1990-02-13 | Canon Inc | Moving stage structure |
| JPH0265149A (en) | 1988-08-30 | 1990-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP2729058B2 (en) | 1988-08-31 | 1998-03-18 | 山形日本電気株式会社 | Exposure equipment for semiconductor devices |
| JPH0297239A (en) | 1988-09-30 | 1990-04-09 | Canon Inc | Power source equipment for aligner |
| JP2682067B2 (en) | 1988-10-17 | 1997-11-26 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2697014B2 (en) | 1988-10-26 | 1998-01-14 | 株式会社ニコン | Exposure apparatus and exposure method |
| JPH02139146A (en) | 1988-11-15 | 1990-05-29 | Matsushita Electric Ind Co Ltd | Positioning table of one step six degrees of freedom |
| JP2940553B2 (en) | 1988-12-21 | 1999-08-25 | 株式会社ニコン | Exposure method |
| JPH07104442B2 (en) | 1989-04-06 | 1995-11-13 | 旭硝子株式会社 | Method for producing magnesium fluoride film and low reflection film |
| DE3907136A1 (en) | 1989-03-06 | 1990-09-13 | Jagenberg Ag | DEVICE FOR JOINING MATERIAL RAILS |
| JPH02261073A (en) | 1989-03-29 | 1990-10-23 | Sony Corp | Ultrasonic motor |
| JPH02287308A (en) | 1989-04-03 | 1990-11-27 | Mikhailovich Khodosovich Vladimir | Method for centering lenses in optical unit mount |
| JPH02285320A (en) | 1989-04-27 | 1990-11-22 | Olympus Optical Co Ltd | Stop device for endoscope |
| JP2527807B2 (en) * | 1989-05-09 | 1996-08-28 | 住友大阪セメント株式会社 | Optical associative identification device |
| JPH02298431A (en) | 1989-05-12 | 1990-12-10 | Mitsubishi Electric Corp | Electric discharge machining device |
| JPH02311237A (en) | 1989-05-25 | 1990-12-26 | Fuji Electric Co Ltd | Carrying device |
| JPH0341399A (en) | 1989-07-10 | 1991-02-21 | Nikon Corp | Manufacture of multilayered film reflecting mirror |
| JPH0364811A (en) | 1989-07-31 | 1991-03-20 | Okazaki Seisakusho:Kk | Hollow core wire mi cable and manufacture thereof |
| JPH0372298A (en) | 1989-08-14 | 1991-03-27 | Nikon Corp | Manufacturing method of multilayer reflective mirror |
| JPH0394445A (en) | 1989-09-06 | 1991-04-19 | Mitsubishi Electric Corp | Semiconductor wafer transfer system |
| JPH03132663A (en) | 1989-10-18 | 1991-06-06 | Fujitsu Ltd | Pellicle |
| JPH03134341A (en) | 1989-10-20 | 1991-06-07 | Fuji Photo Film Co Ltd | Damper mechanism, vibrationproof mechanism and optical beam scanning device into which this damper mechanism, etc. are incorporated |
| JP3067142B2 (en) | 1989-11-28 | 2000-07-17 | 富士通株式会社 | Photomask inspection apparatus and photomask inspection method |
| JP2784225B2 (en) | 1989-11-28 | 1998-08-06 | 双葉電子工業株式会社 | Relative displacement measurement device |
| JPH03211812A (en) | 1990-01-17 | 1991-09-17 | Canon Inc | exposure equipment |
| JPH03263810A (en) | 1990-03-14 | 1991-11-25 | Sumitomo Heavy Ind Ltd | Vibration control method of semiconductor aligner |
| JPH0710897B2 (en) | 1990-04-27 | 1995-02-08 | 日本油脂株式会社 | Plastic lens |
| JPH0432154A (en) | 1990-05-25 | 1992-02-04 | Iwasaki Electric Co Ltd | Metal halide lamp device |
| US5153428A (en) * | 1990-06-15 | 1992-10-06 | Hamamatsu Photonics K.K. | Confocal laser scanning microscope having relay lens and a slit for removing stray light |
| JP3077176B2 (en) | 1990-08-13 | 2000-08-14 | 株式会社ニコン | Exposure method, apparatus, and element manufacturing method |
| JPH04130710A (en) | 1990-09-21 | 1992-05-01 | Hitachi Ltd | Apparatus for exposure of light |
| JP2548834B2 (en) | 1990-09-25 | 1996-10-30 | 三菱電機株式会社 | Electron beam dimension measuring device |
| JPH04133414A (en) | 1990-09-26 | 1992-05-07 | Nec Yamaguchi Ltd | Reduced projection and aligner |
| JPH04152512A (en) | 1990-10-16 | 1992-05-26 | Fujitsu Ltd | Wafer chuck |
| DE4033556A1 (en) | 1990-10-22 | 1992-04-23 | Suess Kg Karl | MEASURING ARRANGEMENT FOR X, Y, (PHI) COORDINATE TABLES |
| JPH04179115A (en) | 1990-11-08 | 1992-06-25 | Nec Kyushu Ltd | Contracted projection aligner |
| JP3094439B2 (en) | 1990-11-21 | 2000-10-03 | 株式会社ニコン | Exposure method |
| JPH0480052U (en) | 1990-11-27 | 1992-07-13 | ||
| JPH04235558A (en) | 1991-01-11 | 1992-08-24 | Toshiba Corp | Exposure device |
| JP3084761B2 (en) | 1991-02-28 | 2000-09-04 | 株式会社ニコン | Exposure method and mask |
| JP3255168B2 (en) | 1991-02-28 | 2002-02-12 | 株式会社ニコン | Exposure method, device manufacturing method using the exposure method, and exposure apparatus |
| JP3084760B2 (en) | 1991-02-28 | 2000-09-04 | 株式会社ニコン | Exposure method and exposure apparatus |
| JP2860174B2 (en) | 1991-03-05 | 1999-02-24 | 三菱電機株式会社 | Chemical vapor deposition equipment |
| JP3200894B2 (en) | 1991-03-05 | 2001-08-20 | 株式会社日立製作所 | Exposure method and apparatus |
| JPH04280619A (en) | 1991-03-08 | 1992-10-06 | Canon Inc | Wafer retaining method and retaining device |
| JPH04282539A (en) | 1991-03-11 | 1992-10-07 | Hitachi Ltd | Method for forming reflection-charge preventing film |
| JPH05259069A (en) | 1991-03-13 | 1993-10-08 | Tokyo Electron Ltd | Method of exposing periphery of wafer |
| JPH04211110A (en) | 1991-03-20 | 1992-08-03 | Hitachi Ltd | Projection aligner and aligning method |
| JPH04296092A (en) | 1991-03-26 | 1992-10-20 | Matsushita Electric Ind Co Ltd | Reflow device |
| JP2602345Y2 (en) | 1991-03-29 | 2000-01-11 | 京セラ株式会社 | Hydrostatic bearing device |
| US5251222A (en) * | 1991-04-01 | 1993-10-05 | Teledyne Industries, Inc. | Active multi-stage cavity sensor |
| JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
| JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
| JP3200874B2 (en) | 1991-07-10 | 2001-08-20 | 株式会社ニコン | Projection exposure equipment |
| JPH04330961A (en) | 1991-05-01 | 1992-11-18 | Matsushita Electron Corp | Development processing equipment |
| FR2676288B1 (en) | 1991-05-07 | 1994-06-17 | Thomson Csf | LIGHT COLLECTOR FOR PROJECTOR. |
| JPH04343307A (en) | 1991-05-20 | 1992-11-30 | Ricoh Co Ltd | Laser adjusting device |
| JP2884830B2 (en) | 1991-05-28 | 1999-04-19 | キヤノン株式会社 | Automatic focusing device |
| JPH0590128A (en) | 1991-06-13 | 1993-04-09 | Nikon Corp | Aligner |
| JPH0545886A (en) | 1991-08-12 | 1993-02-26 | Nikon Corp | Square substrate exposure system |
| JPH0562877A (en) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | Optical system for lsi manufacturing contraction projection aligner by light |
| JPH05109601A (en) | 1991-10-15 | 1993-04-30 | Nikon Corp | Aligner and exposure method |
| JPH05129184A (en) | 1991-10-30 | 1993-05-25 | Canon Inc | Projection exposure device |
| JPH05127086A (en) | 1991-11-01 | 1993-05-25 | Matsushita Electric Ind Co Ltd | Method for uniformizing light intensity and exposure device using the same |
| JP3203719B2 (en) | 1991-12-26 | 2001-08-27 | 株式会社ニコン | Exposure apparatus, device manufactured by the exposure apparatus, exposure method, and device manufacturing method using the exposure method |
| JPH05199680A (en) | 1992-01-17 | 1993-08-06 | Honda Motor Co Ltd | Power supply |
| JPH0794969B2 (en) | 1992-01-29 | 1995-10-11 | 株式会社ソルテック | Positioning method and device thereof |
| JP3194155B2 (en) | 1992-01-31 | 2001-07-30 | キヤノン株式会社 | Semiconductor device manufacturing method and projection exposure apparatus using the same |
| JPH05217837A (en) | 1992-02-04 | 1993-08-27 | Toshiba Corp | X-y movable table |
| JP3153372B2 (en) | 1992-02-26 | 2001-04-09 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JPH05241324A (en) | 1992-02-26 | 1993-09-21 | Nikon Corp | Photomask and exposure method |
| JPH05243364A (en) | 1992-03-02 | 1993-09-21 | Hitachi Ltd | Method of destaticizing semiconductor wafer and semiconductor integrated circuit manufacturing apparatus using the same |
| JP3278896B2 (en) | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| US5312513A (en) * | 1992-04-03 | 1994-05-17 | Texas Instruments Incorporated | Methods of forming multiple phase light modulators |
| JPH05304072A (en) | 1992-04-08 | 1993-11-16 | Nec Corp | Manufacture of semiconductor device |
| JP3242693B2 (en) | 1992-05-15 | 2001-12-25 | 富士通株式会社 | Pellicle sticking device |
| JP2673130B2 (en) | 1992-05-20 | 1997-11-05 | 株式会社キトー | Suspension support device for traveling rail |
| JPH0629204A (en) | 1992-07-08 | 1994-02-04 | Fujitsu Ltd | Method and apparatus for development of resist |
| JPH0636054A (en) | 1992-07-20 | 1994-02-10 | Mitsubishi Electric Corp | One-chip microcomputer |
| JP3246615B2 (en) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | Illumination optical device, exposure apparatus, and exposure method |
| JPH06188169A (en) | 1992-08-24 | 1994-07-08 | Canon Inc | Imaging method, exposure apparatus using the method, and device manufacturing method using the method |
| JPH07318847A (en) | 1994-05-26 | 1995-12-08 | Nikon Corp | Lighting optics |
| JPH06104167A (en) | 1992-09-18 | 1994-04-15 | Hitachi Ltd | Exposure apparatus and semiconductor device manufacturing method |
| JP2884947B2 (en) | 1992-10-01 | 1999-04-19 | 株式会社ニコン | Projection exposure apparatus, exposure method, and method of manufacturing semiconductor integrated circuit |
| JP2724787B2 (en) | 1992-10-09 | 1998-03-09 | キヤノン株式会社 | Positioning device |
| JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Immersion projection exposure system |
| JPH06124872A (en) | 1992-10-14 | 1994-05-06 | Canon Inc | Image forming method and manufacture of semiconductor device using the method |
| JP3322274B2 (en) | 1992-10-29 | 2002-09-09 | 株式会社ニコン | Projection exposure method and projection exposure apparatus |
| JPH06148399A (en) | 1992-11-05 | 1994-05-27 | Nikon Corp | Multilayer mirror for X-ray and X-ray microscope |
| JPH06163350A (en) | 1992-11-19 | 1994-06-10 | Matsushita Electron Corp | Projection exposure method and device thereof |
| US5383000A (en) * | 1992-11-24 | 1995-01-17 | General Signal Corporation | Partial coherence varier for microlithographic system |
| JP2753930B2 (en) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | Immersion type projection exposure equipment |
| JPH06177007A (en) | 1992-12-01 | 1994-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Projection exposure device |
| JPH06181157A (en) | 1992-12-15 | 1994-06-28 | Nikon Corp | Low dust generation device |
| JPH06186025A (en) | 1992-12-16 | 1994-07-08 | Yunisun:Kk | Three dimensional measuring device |
| JP2520833B2 (en) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | Immersion type liquid treatment device |
| JP3201027B2 (en) | 1992-12-22 | 2001-08-20 | 株式会社ニコン | Projection exposure apparatus and method |
| JP3316833B2 (en) | 1993-03-26 | 2002-08-19 | 株式会社ニコン | Scanning exposure method, surface position setting device, scanning type exposure device, and device manufacturing method using the method |
| JPH06204121A (en) | 1992-12-28 | 1994-07-22 | Canon Inc | Illuminator and projection aligner using the same |
| JP2765422B2 (en) | 1992-12-28 | 1998-06-18 | キヤノン株式会社 | Exposure apparatus and method for manufacturing semiconductor device using the same |
| JP2786070B2 (en) | 1993-01-29 | 1998-08-13 | セントラル硝子株式会社 | Inspection method and apparatus for transparent plate |
| JPH07245258A (en) | 1994-03-08 | 1995-09-19 | Nikon Corp | Exposure method and exposure apparatus |
| JPH06241720A (en) | 1993-02-18 | 1994-09-02 | Sony Corp | Displacement amount measuring method and displacement meter |
| JPH06244082A (en) | 1993-02-19 | 1994-09-02 | Nikon Corp | Projection exposure device |
| JP3412704B2 (en) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | Projection exposure method and apparatus, and exposure apparatus |
| JP3747958B2 (en) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | Catadioptric optics |
| JP3291818B2 (en) | 1993-03-16 | 2002-06-17 | 株式会社ニコン | Projection exposure apparatus and semiconductor integrated circuit manufacturing method using the apparatus |
| JP3537843B2 (en) | 1993-03-19 | 2004-06-14 | 株式会社テクノ菱和 | Clean room ionizer |
| US5461410A (en) * | 1993-03-29 | 1995-10-24 | Texas Instruments Incorporated | Gray scale printing using spatial light modulators |
| JPH0777191B2 (en) | 1993-04-06 | 1995-08-16 | 日本電気株式会社 | Exposure light projection device |
| US5815248A (en) * | 1993-04-22 | 1998-09-29 | Nikon Corporation | Illumination optical apparatus and method having a wavefront splitter and an optical integrator |
| JP3309871B2 (en) | 1993-04-27 | 2002-07-29 | 株式会社ニコン | Projection exposure method and apparatus, and element manufacturing method |
| JPH06326174A (en) | 1993-05-12 | 1994-11-25 | Hitachi Ltd | Wafer vacuum suction device |
| JP3265503B2 (en) | 1993-06-11 | 2002-03-11 | 株式会社ニコン | Exposure method and apparatus |
| JP3844787B2 (en) | 1993-09-02 | 2006-11-15 | 日産化学工業株式会社 | Magnesium fluoride hydrate sol and its production method |
| JP3359123B2 (en) | 1993-09-20 | 2002-12-24 | キヤノン株式会社 | Aberration correction optical system |
| JP3099933B2 (en) | 1993-12-28 | 2000-10-16 | 株式会社東芝 | Exposure method and exposure apparatus |
| JPH07122469A (en) | 1993-10-20 | 1995-05-12 | Nikon Corp | Projection exposure device |
| JP3376045B2 (en) | 1993-11-09 | 2003-02-10 | キヤノン株式会社 | Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus |
| JPH07134955A (en) | 1993-11-11 | 1995-05-23 | Hitachi Ltd | Display device and its reflectance adjustment method |
| JP3339144B2 (en) | 1993-11-11 | 2002-10-28 | 株式会社ニコン | Scanning exposure apparatus and exposure method |
| JP3278303B2 (en) | 1993-11-12 | 2002-04-30 | キヤノン株式会社 | Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus |
| JPH07147223A (en) | 1993-11-26 | 1995-06-06 | Hitachi Ltd | Pattern formation method |
| DE69432283T2 (en) | 1993-12-01 | 2004-01-22 | Sharp K.K. | Display for three-dimensional images |
| JPH07167998A (en) | 1993-12-15 | 1995-07-04 | Nikon Corp | Target for laser plasma X-ray source |
| JP3487517B2 (en) | 1993-12-16 | 2004-01-19 | 株式会社リコー | Reciprocating device |
| JPH07183201A (en) | 1993-12-21 | 1995-07-21 | Nec Corp | Exposure device and method therefor |
| JP3508190B2 (en) | 1993-12-21 | 2004-03-22 | セイコーエプソン株式会社 | Lighting device and projection display device |
| JPH07190741A (en) | 1993-12-27 | 1995-07-28 | Nippon Telegr & Teleph Corp <Ntt> | Measurement error correction method |
| JPH07220989A (en) | 1994-01-27 | 1995-08-18 | Canon Inc | Exposure apparatus and device manufacturing method using the same |
| JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus thereof |
| JP2715895B2 (en) | 1994-01-31 | 1998-02-18 | 日本電気株式会社 | Light intensity distribution simulation method |
| JP3372633B2 (en) | 1994-02-04 | 2003-02-04 | キヤノン株式会社 | Positioning method and positioning apparatus using the same |
| JP2836483B2 (en) | 1994-05-13 | 1998-12-14 | 日本電気株式会社 | Illumination optics |
| JPH07239212A (en) | 1994-02-28 | 1995-09-12 | Nikon Corp | Position detector |
| JPH07243814A (en) | 1994-03-03 | 1995-09-19 | Fujitsu Ltd | Line width measurement method |
| JPH07263315A (en) | 1994-03-25 | 1995-10-13 | Toshiba Corp | Projection exposure device |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| JPH07283119A (en) | 1994-04-14 | 1995-10-27 | Hitachi Ltd | Exposure apparatus and exposure method |
| JP3193567B2 (en) | 1994-04-27 | 2001-07-30 | キヤノン株式会社 | Substrate storage container |
| JP3555230B2 (en) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | Projection exposure equipment |
| JPH07335748A (en) | 1994-06-07 | 1995-12-22 | Miyazaki Oki Electric Co Ltd | Manufacture of semiconductor element |
| JP3800616B2 (en) | 1994-06-27 | 2006-07-26 | 株式会社ニコン | Target moving device, positioning device, and movable stage device |
| JP3090577B2 (en) | 1994-06-29 | 2000-09-25 | 浜松ホトニクス株式会社 | Conductor layer removal method and system |
| JP3205663B2 (en) | 1994-06-29 | 2001-09-04 | 日本電子株式会社 | Charged particle beam equipment |
| JPH0822948A (en) | 1994-07-08 | 1996-01-23 | Nikon Corp | Scanning exposure device |
| JP3205468B2 (en) | 1994-07-25 | 2001-09-04 | 株式会社日立製作所 | Processing apparatus and exposure apparatus having wafer chuck |
| JPH0846751A (en) | 1994-07-29 | 1996-02-16 | Sanyo Electric Co Ltd | Illumination optical system |
| JP3613288B2 (en) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | Cleaning device for exposure apparatus |
| JPH08136475A (en) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | Plate material surface observation device |
| JPH08151220A (en) | 1994-11-28 | 1996-06-11 | Nippon Sekiei Glass Kk | Method for molding quartz glass |
| JPH08162397A (en) | 1994-11-30 | 1996-06-21 | Canon Inc | Projection exposure apparatus and semiconductor device manufacturing method using the same |
| JPH08171054A (en) | 1994-12-16 | 1996-07-02 | Nikon Corp | Catadioptric system |
| JPH08195375A (en) | 1995-01-17 | 1996-07-30 | Sony Corp | Rotary drying method and rotary drying device |
| JPH08203803A (en) | 1995-01-24 | 1996-08-09 | Nikon Corp | Exposure equipment |
| JP3521544B2 (en) | 1995-05-24 | 2004-04-19 | 株式会社ニコン | Exposure equipment |
| JP3312164B2 (en) | 1995-04-07 | 2002-08-05 | 日本電信電話株式会社 | Vacuum suction device |
| JPH08297699A (en) | 1995-04-26 | 1996-11-12 | Hitachi Ltd | Manufacturing defect analysis support system, manufacturing system, and manufacturing defect analysis support method |
| JPH08313842A (en) | 1995-05-15 | 1996-11-29 | Nikon Corp | Illumination optical system and exposure apparatus including the optical system |
| JPH08316125A (en) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | Projection exposure method and exposure apparatus |
| US5680588A (en) | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
| JP3531297B2 (en) | 1995-06-19 | 2004-05-24 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
| JP3561556B2 (en) | 1995-06-29 | 2004-09-02 | 株式会社ルネサステクノロジ | Manufacturing method of mask |
| JP3637639B2 (en) | 1995-07-10 | 2005-04-13 | 株式会社ニコン | Exposure equipment |
| JPH09108551A (en) | 1995-08-11 | 1997-04-28 | Mitsubishi Rayon Co Ltd | Water purifier |
| JPH0961686A (en) | 1995-08-23 | 1997-03-07 | Nikon Corp | Plastic lens |
| JPH0982626A (en) | 1995-09-12 | 1997-03-28 | Nikon Corp | Projection exposure device |
| JP3487527B2 (en) | 1995-09-14 | 2004-01-19 | 株式会社東芝 | Light refraction device |
| JPH0992593A (en) | 1995-09-21 | 1997-04-04 | Nikon Corp | Projection exposure device |
| US5815247A (en) | 1995-09-21 | 1998-09-29 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
| DE19535392A1 (en) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarization-rotating optical arrangement and microlithography projection exposure system with it |
| KR100505202B1 (en) | 1995-09-27 | 2005-11-25 | 칼 짜이스 에스엠테 아게 | Zoom device |
| JP3433403B2 (en) | 1995-10-16 | 2003-08-04 | 三星電子株式会社 | Stepper interface device |
| FR2740554A1 (en) | 1995-10-31 | 1997-04-30 | Philips Electronique Lab | SYSTEM FOR MONITORING THE DISCHARGE PHASE OF THE CHARGING-DISCHARGE CYCLES OF A RECHARGEABLE BATTERY, AND HOST DEVICE PROVIDED WITH AN INTELLIGENT BATTERY |
| JPH09134870A (en) | 1995-11-10 | 1997-05-20 | Hitachi Ltd | Pattern forming method and forming apparatus |
| JPH09148406A (en) | 1995-11-24 | 1997-06-06 | Dainippon Screen Mfg Co Ltd | Substrate carrying apparatus |
| JPH09151658A (en) | 1995-11-30 | 1997-06-10 | Nichibei Co Ltd | Runner connection device for mobile partition wall |
| JPH09160004A (en) | 1995-12-01 | 1997-06-20 | Denso Corp | Liquid crystal cell and its empty cell |
| JP3406957B2 (en) | 1995-12-06 | 2003-05-19 | キヤノン株式会社 | Optical element and exposure apparatus using the same |
| JPH09162106A (en) | 1995-12-11 | 1997-06-20 | Nikon Corp | Scanning exposure equipment |
| JPH09178415A (en) | 1995-12-25 | 1997-07-11 | Nikon Corp | Light wave interferometer |
| JPH09184787A (en) | 1995-12-28 | 1997-07-15 | Olympus Optical Co Ltd | Analysis/evaluation device for optical lens |
| JP3232473B2 (en) | 1996-01-10 | 2001-11-26 | キヤノン株式会社 | Projection exposure apparatus and device manufacturing method using the same |
| JP3189661B2 (en) | 1996-02-05 | 2001-07-16 | ウシオ電機株式会社 | Light source device |
| JP3576685B2 (en) | 1996-02-07 | 2004-10-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method using the same |
| JPH09227294A (en) | 1996-02-26 | 1997-09-02 | Toyo Commun Equip Co Ltd | Production of artificial quartz crystal |
| JPH09232213A (en) | 1996-02-26 | 1997-09-05 | Nikon Corp | Projection exposure equipment |
| JPH09243892A (en) | 1996-03-06 | 1997-09-19 | Matsushita Electric Ind Co Ltd | Optical element |
| JP3782151B2 (en) | 1996-03-06 | 2006-06-07 | キヤノン株式会社 | Gas supply device for excimer laser oscillator |
| JPH09281077A (en) | 1996-04-16 | 1997-10-31 | Hitachi Ltd | Capillary electrophoresis device |
| JP2691341B2 (en) | 1996-05-27 | 1997-12-17 | 株式会社ニコン | Projection exposure equipment |
| JPH09326338A (en) | 1996-06-04 | 1997-12-16 | Nikon Corp | Manufacturing control device |
| JPH09325255A (en) | 1996-06-06 | 1997-12-16 | Olympus Optical Co Ltd | Electronic camera |
| JPH103039A (en) | 1996-06-14 | 1998-01-06 | Nikon Corp | Catoptric system |
| JPH102865A (en) | 1996-06-18 | 1998-01-06 | Nikon Corp | Reticle inspection apparatus and inspection method |
| JPH1020195A (en) | 1996-06-28 | 1998-01-23 | Nikon Corp | Catoptric system |
| JPH1032160A (en) | 1996-07-17 | 1998-02-03 | Toshiba Corp | Pattern exposure method and exposure apparatus |
| JP3646415B2 (en) | 1996-07-18 | 2005-05-11 | ソニー株式会社 | Mask defect detection method |
| JPH1038517A (en) | 1996-07-23 | 1998-02-13 | Canon Inc | Optical displacement measuring device |
| JP3646757B2 (en) | 1996-08-22 | 2005-05-11 | 株式会社ニコン | Projection exposure method and apparatus |
| JPH1079337A (en) | 1996-09-04 | 1998-03-24 | Nikon Corp | Projection exposure equipment |
| JPH1055713A (en) | 1996-08-08 | 1998-02-24 | Ushio Inc | UV irradiation device |
| JPH1062305A (en) | 1996-08-19 | 1998-03-06 | Advantest Corp | Sensitivity correcting method of ccd camera, and lcd panel display test system with ccd camera sensitivity correcting function |
| JPH1082611A (en) | 1996-09-10 | 1998-03-31 | Nikon Corp | Surface position detection device |
| JPH1092735A (en) | 1996-09-13 | 1998-04-10 | Nikon Corp | Exposure equipment |
| JP2914315B2 (en) | 1996-09-20 | 1999-06-28 | 日本電気株式会社 | Scanning reduction projection exposure apparatus and distortion measuring method |
| JPH10104427A (en) | 1996-10-03 | 1998-04-24 | Sankyo Seiki Mfg Co Ltd | Wavelength plate, and optical pickup unit equipped with the same |
| JPH10116760A (en) | 1996-10-08 | 1998-05-06 | Nikon Corp | Exposure device and substrate holding device |
| JPH10116778A (en) | 1996-10-09 | 1998-05-06 | Canon Inc | Scan exposure equipment |
| JPH10116779A (en) | 1996-10-11 | 1998-05-06 | Nikon Corp | Stage equipment |
| JP3955985B2 (en) | 1996-10-16 | 2007-08-08 | 株式会社ニコン | Mark position detection apparatus and method |
| KR100191329B1 (en) | 1996-10-23 | 1999-06-15 | 윤종용 | Method and apparatus for distance education on the Internet. |
| JP3991166B2 (en) | 1996-10-25 | 2007-10-17 | 株式会社ニコン | Illumination optical apparatus and exposure apparatus provided with the illumination optical apparatus |
| JPH10135099A (en) | 1996-10-25 | 1998-05-22 | Sony Corp | Exposure apparatus and exposure method |
| JP4029182B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Exposure method |
| IL130137A (en) | 1996-11-28 | 2003-07-06 | Nikon Corp | Exposure apparatus and an exposure method |
| JP4029183B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
| JP3624065B2 (en) | 1996-11-29 | 2005-02-23 | キヤノン株式会社 | Substrate transport apparatus, semiconductor manufacturing apparatus, and exposure apparatus |
| JPH10169249A (en) | 1996-12-12 | 1998-06-23 | Ohbayashi Corp | Base isolating structure |
| JPH10189700A (en) | 1996-12-20 | 1998-07-21 | Sony Corp | Wafer holding mechanism |
| JP2910716B2 (en) | 1997-01-16 | 1999-06-23 | 日本電気株式会社 | Parametric analysis method of light intensity calculation |
| JPH10206714A (en) | 1997-01-20 | 1998-08-07 | Canon Inc | Lens moving device |
| JP2926325B2 (en) | 1997-01-23 | 1999-07-28 | 株式会社ニコン | Scanning exposure method |
| JPH10209018A (en) | 1997-01-24 | 1998-08-07 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask frame and method of holding X-ray mask |
| JP3612920B2 (en) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | Exposure apparatus for producing an optical recording medium master |
| JPH10255319A (en) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | Master exposure apparatus and method |
| JPH10294268A (en) | 1997-04-16 | 1998-11-04 | Nikon Corp | Projection exposure apparatus and alignment method |
| JP3747566B2 (en) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | Immersion exposure equipment |
| JPH118194A (en) | 1997-04-25 | 1999-01-12 | Nikon Corp | Exposure condition measurement method, projection optical system evaluation method, and lithography system |
| JP3817836B2 (en) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
| JPH113856A (en) | 1997-06-11 | 1999-01-06 | Canon Inc | Projection exposure method and projection exposure apparatus |
| JPH113849A (en) | 1997-06-12 | 1999-01-06 | Sony Corp | Variable deformation illumination filter and semiconductor exposure apparatus |
| JP3233341B2 (en) | 1997-06-12 | 2001-11-26 | 船井電機株式会社 | Bread maker and recording medium used therein |
| JPH1114876A (en) | 1997-06-19 | 1999-01-22 | Nikon Corp | Optical structure, projection exposure optical system incorporating the optical structure, and projection exposure apparatus |
| JPH1116816A (en) | 1997-06-25 | 1999-01-22 | Nikon Corp | Projection exposure apparatus, exposure method using the apparatus, and method for manufacturing circuit device using the apparatus |
| JPH1140657A (en) | 1997-07-23 | 1999-02-12 | Nikon Corp | Sample holding device and scanning exposure device |
| JP3264224B2 (en) | 1997-08-04 | 2002-03-11 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| JP3413074B2 (en) | 1997-08-29 | 2003-06-03 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JPH1187237A (en) | 1997-09-10 | 1999-03-30 | Nikon Corp | Alignment device |
| JP4164905B2 (en) | 1997-09-25 | 2008-10-15 | 株式会社ニコン | Electromagnetic force motor, stage apparatus and exposure apparatus |
| JP2000106340A (en) | 1997-09-26 | 2000-04-11 | Nikon Corp | Exposure apparatus, scanning exposure method, and stage apparatus |
| JPH11111819A (en) | 1997-09-30 | 1999-04-23 | Asahi Kasei Micro Syst Co Ltd | Wafer fixing method and light exposing device |
| JPH11111818A (en) | 1997-10-03 | 1999-04-23 | Oki Electric Ind Co Ltd | Holding device and holder for wafer |
| JPH11111601A (en) | 1997-10-06 | 1999-04-23 | Nikon Corp | Exposure method and apparatus |
| JPH11195602A (en) | 1997-10-07 | 1999-07-21 | Nikon Corp | Projection exposure method and apparatus |
| JP3097620B2 (en) | 1997-10-09 | 2000-10-10 | 日本電気株式会社 | Scanning reduction projection exposure equipment |
| JP4210871B2 (en) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | Exposure equipment |
| JPH11142556A (en) | 1997-11-13 | 1999-05-28 | Nikon Corp | Stage control method, stage apparatus, and exposure apparatus having the apparatus |
| JPH11150062A (en) | 1997-11-14 | 1999-06-02 | Nikon Corp | Vibration isolation apparatus, exposure apparatus and vibration isolation method for vibration isolation table |
| JPH11283903A (en) | 1998-03-30 | 1999-10-15 | Nikon Corp | Projection optical system inspection apparatus and projection exposure apparatus having the same |
| AU1175799A (en) | 1997-11-21 | 1999-06-15 | Nikon Corporation | Projection aligner and projection exposure method |
| JPH11162831A (en) | 1997-11-21 | 1999-06-18 | Nikon Corp | Projection exposure apparatus and projection exposure method |
| JPH11163103A (en) | 1997-11-25 | 1999-06-18 | Hitachi Ltd | Semiconductor device manufacturing method and manufacturing apparatus |
| JPH11159571A (en) | 1997-11-28 | 1999-06-15 | Nikon Corp | Mechanical device, exposure apparatus, and method of operating exposure apparatus |
| JPH11166990A (en) | 1997-12-04 | 1999-06-22 | Nikon Corp | Stage apparatus, exposure apparatus, and scanning exposure apparatus |
| JPH11176727A (en) | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection exposure equipment |
| JP3673633B2 (en) | 1997-12-16 | 2005-07-20 | キヤノン株式会社 | Assembling and adjusting method of projection optical system |
| WO1999031716A1 (en) | 1997-12-16 | 1999-06-24 | Nikon Corporation | Aligner, exposure method and method of manufacturing device |
| TW449672B (en) | 1997-12-25 | 2001-08-11 | Nippon Kogaku Kk | Process and apparatus for manufacturing photomask and method of manufacturing the same |
| JPH11204390A (en) | 1998-01-14 | 1999-07-30 | Canon Inc | Semiconductor manufacturing apparatus and device manufacturing method |
| JPH11219882A (en) | 1998-02-02 | 1999-08-10 | Nikon Corp | Stage and exposure equipment |
| JPH11288879A (en) | 1998-02-04 | 1999-10-19 | Hitachi Ltd | Exposure condition determining method, apparatus therefor, and method of manufacturing semiconductor device |
| JP3820728B2 (en) | 1998-02-04 | 2006-09-13 | 東レ株式会社 | Substrate measuring device |
| JPH11233434A (en) | 1998-02-17 | 1999-08-27 | Nikon Corp | Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method |
| JP4207240B2 (en) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | Illuminometer for exposure apparatus, lithography system, illuminometer calibration method, and microdevice manufacturing method |
| JPH11239758A (en) | 1998-02-26 | 1999-09-07 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| JPH11260791A (en) | 1998-03-10 | 1999-09-24 | Toshiba Mach Co Ltd | Drying method of semiconductor wafer and drying equipment |
| JPH11260686A (en) | 1998-03-11 | 1999-09-24 | Toshiba Corp | Exposure method |
| JPH11264756A (en) | 1998-03-18 | 1999-09-28 | Tokyo Electron Ltd | Liquid level detector, liquid level detection method, and substrate processing apparatus |
| WO1999049366A1 (en) | 1998-03-20 | 1999-09-30 | Nikon Corporation | Photomask and projection exposure system |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| KR20010042133A (en) | 1998-03-26 | 2001-05-25 | 오노 시게오 | Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device |
| JPH11307610A (en) | 1998-04-22 | 1999-11-05 | Nikon Corp | Substrate transfer device and exposure device |
| JPH11312631A (en) | 1998-04-27 | 1999-11-09 | Nikon Corp | Illumination optical device and exposure device |
| CA2236774C (en) | 1998-05-06 | 2005-01-18 | Precor Incorporated | Suspension system for exercise apparatus |
| JP4090115B2 (en) | 1998-06-09 | 2008-05-28 | 信越ポリマー株式会社 | Substrate storage container |
| WO1999066370A1 (en) | 1998-06-17 | 1999-12-23 | Nikon Corporation | Method for producing mask |
| JP2000012453A (en) | 1998-06-18 | 2000-01-14 | Nikon Corp | Exposure apparatus, method of using the same, exposure method, and method of manufacturing mask |
| JP2000021742A (en) | 1998-06-30 | 2000-01-21 | Canon Inc | Exposure method and exposure apparatus |
| JP2000021748A (en) | 1998-06-30 | 2000-01-21 | Canon Inc | Exposure method and exposure apparatus |
| DE19829612A1 (en) | 1998-07-02 | 2000-01-05 | Zeiss Carl Fa | Microlithography lighting system with depolarizer |
| JP2000032403A (en) | 1998-07-14 | 2000-01-28 | Sony Corp | Data transmission method, data transmission device and reception device |
| JP2000029202A (en) | 1998-07-15 | 2000-01-28 | Nikon Corp | Manufacturing method of mask |
| JP2000036449A (en) | 1998-07-17 | 2000-02-02 | Nikon Corp | Exposure equipment |
| JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection exposure apparatus and exposure method |
| WO2000011706A1 (en) | 1998-08-18 | 2000-03-02 | Nikon Corporation | Illuminator and projection exposure apparatus |
| JP2000081320A (en) | 1998-09-03 | 2000-03-21 | Canon Inc | Surface position detecting apparatus and device manufacturing method using the same |
| JP2000092815A (en) | 1998-09-10 | 2000-03-31 | Canon Inc | Stage apparatus and exposure apparatus using the stage apparatus |
| JP4132397B2 (en) | 1998-09-16 | 2008-08-13 | 積水化学工業株式会社 | Photocurable resin composition, liquid crystal inlet sealing agent and liquid crystal display cell |
| JP2000097616A (en) | 1998-09-22 | 2000-04-07 | Nikon Corp | Interferometer |
| JP4065923B2 (en) | 1998-09-29 | 2008-03-26 | 株式会社ニコン | Illumination apparatus, projection exposure apparatus including the illumination apparatus, projection exposure method using the illumination apparatus, and adjustment method of the projection exposure apparatus |
| JP2000121498A (en) | 1998-10-15 | 2000-04-28 | Nikon Corp | Method and apparatus for evaluating imaging performance |
| JP2000121491A (en) | 1998-10-20 | 2000-04-28 | Nikon Corp | Evaluation method of optical system |
| US6466304B1 (en) * | 1998-10-22 | 2002-10-15 | Asm Lithography B.V. | Illumination device for projection system and method for fabricating |
| JP2001176766A (en) | 1998-10-29 | 2001-06-29 | Nikon Corp | Illumination device and projection exposure device |
| JP2000147346A (en) | 1998-11-09 | 2000-05-26 | Toshiba Corp | Mounting mechanism for molded lenses |
| JP2000180371A (en) | 1998-12-11 | 2000-06-30 | Sharp Corp | Foreign matter inspection equipment and semiconductor processing equipment |
| US6406148B1 (en) * | 1998-12-31 | 2002-06-18 | Texas Instruments Incorporated | Electronic color switching in field sequential video displays |
| JP4146952B2 (en) | 1999-01-11 | 2008-09-10 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2000208407A (en) | 1999-01-19 | 2000-07-28 | Nikon Corp | Exposure equipment |
| JP2000243684A (en) | 1999-02-18 | 2000-09-08 | Canon Inc | Exposure apparatus and device manufacturing method |
| JP2000240717A (en) | 1999-02-19 | 2000-09-05 | Canon Inc | Active vibration isolation device |
| JP2000252201A (en) | 1999-03-02 | 2000-09-14 | Nikon Corp | Surface position detecting method and apparatus, projection exposure method and apparatus using the same, and semiconductor device manufacturing method |
| JP2000283889A (en) | 1999-03-31 | 2000-10-13 | Nikon Corp | Projection optical system inspection apparatus and inspection method, exposure apparatus, and microdevice manufacturing method |
| JP2000286176A (en) | 1999-03-31 | 2000-10-13 | Hitachi Ltd | Display method of processing status in semiconductor substrate processing apparatus and semiconductor substrate processing apparatus |
| AU4143000A (en) | 1999-04-28 | 2000-11-17 | Nikon Corporation | Exposure method and apparatus |
| DE19921795A1 (en) | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projection exposure system and exposure method of microlithography |
| JP2000003874A (en) | 1999-06-15 | 2000-01-07 | Nikon Corp | Exposure method and exposure apparatus |
| JP2001007015A (en) | 1999-06-25 | 2001-01-12 | Canon Inc | Stage equipment |
| AU4395099A (en) | 1999-06-30 | 2001-01-22 | Nikon Corporation | Exposure method and device |
| JP2001020951A (en) | 1999-07-07 | 2001-01-23 | Toto Ltd | Static pressure gas bearing |
| JP2001023996A (en) | 1999-07-08 | 2001-01-26 | Sony Corp | Semiconductor manufacturing method |
| DE10029938A1 (en) | 1999-07-09 | 2001-07-05 | Zeiss Carl | Optical system for projection exposure device, includes optical element which consists of magnesium fluoride, as main constituent |
| JP2001037201A (en) | 1999-07-21 | 2001-02-09 | Nikon Corp | Motor device, stage device, and exposure device |
| JP2001044097A (en) | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | Exposure equipment |
| US6280034B1 (en) | 1999-07-30 | 2001-08-28 | Philips Electronics North America Corporation | Efficient two-panel projection system employing complementary illumination |
| JP3110023B1 (en) | 1999-09-02 | 2000-11-20 | 岩堀 雅行 | Fuel release device |
| JP2001083472A (en) | 1999-09-10 | 2001-03-30 | Nikon Corp | Light modulation device, light source device, and exposure device |
| JP4362857B2 (en) | 1999-09-10 | 2009-11-11 | 株式会社ニコン | Light source apparatus and exposure apparatus |
| EP1137054B1 (en) | 1999-09-20 | 2006-03-15 | Nikon Corporation | Exposure system comprising a parallel link mechaniam and exposure method |
| JP2001097734A (en) | 1999-09-30 | 2001-04-10 | Toshiba Ceramics Co Ltd | Quartz glass container and manufacturing method thereof |
| WO2001027978A1 (en) | 1999-10-07 | 2001-04-19 | Nikon Corporation | Substrate, stage device, method of driving stage, exposure system and exposure method |
| JP2001110707A (en) | 1999-10-08 | 2001-04-20 | Orc Mfg Co Ltd | Optical system of peripheral aligner |
| JP2001118773A (en) | 1999-10-18 | 2001-04-27 | Nikon Corp | Stage device and exposure device |
| JP2001135560A (en) | 1999-11-04 | 2001-05-18 | Nikon Corp | Illumination optical apparatus, exposure apparatus having the illumination optical apparatus, and method for manufacturing microdevice using the exposure apparatus |
| JP2001144004A (en) | 1999-11-16 | 2001-05-25 | Nikon Corp | Exposure method, exposure apparatus, and device manufacturing method |
| JP2001167996A (en) | 1999-12-10 | 2001-06-22 | Tokyo Electron Ltd | Substrate processing equipment |
| EP1109067B1 (en) | 1999-12-13 | 2006-05-24 | ASML Netherlands B.V. | Illuminator |
| JP2002118058A (en) | 2000-01-13 | 2002-04-19 | Nikon Corp | Projection aligner and projection exposure method |
| JP2001203140A (en) | 2000-01-20 | 2001-07-27 | Nikon Corp | Stage apparatus, exposure apparatus and device manufacturing method |
| JP3413485B2 (en) | 2000-01-31 | 2003-06-03 | 住友重機械工業株式会社 | Thrust ripple measurement method for linear motor |
| JP2005233979A (en) | 2000-02-09 | 2005-09-02 | Nikon Corp | Catadioptric optics |
| JP4018309B2 (en) | 2000-02-14 | 2007-12-05 | 松下電器産業株式会社 | Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus |
| JP2001228404A (en) | 2000-02-14 | 2001-08-24 | Nikon Engineering Co Ltd | Epi-illumination microscope, probe card inspection device, and probe card manufacturing method |
| JP2001228401A (en) | 2000-02-16 | 2001-08-24 | Canon Inc | Projection optical system, projection exposure apparatus using the projection optical system, and device manufacturing method |
| JP2001313250A (en) | 2000-02-25 | 2001-11-09 | Nikon Corp | Exposure apparatus, adjustment method thereof, and device manufacturing method using the exposure apparatus |
| JP2002100561A (en) | 2000-07-19 | 2002-04-05 | Nikon Corp | Exposure method and apparatus, and device manufacturing method |
| JP2001242269A (en) | 2000-03-01 | 2001-09-07 | Nikon Corp | Stage apparatus, stage driving method, exposure apparatus and exposure method |
| DE10010131A1 (en) | 2000-03-03 | 2001-09-06 | Zeiss Carl | Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence |
| US7301605B2 (en) | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
| JP2001265581A (en) | 2000-03-21 | 2001-09-28 | Canon Inc | Software unauthorized use prevention system and unauthorized use prevention method |
| JP2001267227A (en) | 2000-03-21 | 2001-09-28 | Canon Inc | Vibration isolation system, exposure apparatus and device manufacturing method |
| JP2001338868A (en) | 2000-03-24 | 2001-12-07 | Nikon Corp | Illuminance measurement device and exposure device |
| JP2001272764A (en) | 2000-03-24 | 2001-10-05 | Canon Inc | Photomask for projection exposure and projection exposure method using the same |
| JP4689064B2 (en) | 2000-03-30 | 2011-05-25 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2001282526A (en) | 2000-03-31 | 2001-10-12 | Canon Inc | Software management device, method, and computer-readable storage medium |
| JP2001296105A (en) | 2000-04-12 | 2001-10-26 | Nikon Corp | Surface position detection device, exposure device and exposure method using the detection device |
| JP2001297976A (en) | 2000-04-17 | 2001-10-26 | Canon Inc | Exposure method and exposure apparatus |
| JP2001307983A (en) | 2000-04-20 | 2001-11-02 | Nikon Corp | Stage device and exposure device |
| JP3514439B2 (en) | 2000-04-20 | 2004-03-31 | キヤノン株式会社 | Support structure for optical element, exposure apparatus configured using the support structure, and method for manufacturing devices and the like using the apparatus |
| JP2001304332A (en) | 2000-04-24 | 2001-10-31 | Canon Inc | Active vibration suppression device |
| AU2001257191A1 (en) | 2000-04-25 | 2001-11-07 | Silicon Valley Group Inc | Optical reduction system with elimination of reticle diffraction induced bias |
| JP2002014005A (en) | 2000-04-25 | 2002-01-18 | Nikon Corp | Aerial image measurement method, imaging characteristic measurement method, aerial image measurement device, and exposure device |
| JP5306566B2 (en) | 2000-05-01 | 2013-10-02 | アイロボット コーポレーション | Method and system for remotely controlling a mobile robot |
| JP2002057097A (en) | 2000-05-31 | 2002-02-22 | Nikon Corp | Exposure apparatus, micro device, and manufacturing method thereof |
| JP2002016124A (en) | 2000-06-28 | 2002-01-18 | Sony Corp | Wafer transfer arm mechanism |
| JP2002015978A (en) | 2000-06-29 | 2002-01-18 | Canon Inc | Exposure equipment |
| JP2002043213A (en) | 2000-07-25 | 2002-02-08 | Nikon Corp | Stage equipment and exposure equipment |
| ATE352052T1 (en) | 2000-08-18 | 2007-02-15 | Nikon Corp | HOLDING DEVICE FOR OPTICAL ELEMENT |
| JP3645801B2 (en) | 2000-08-24 | 2005-05-11 | ペンタックス株式会社 | Beam train detection method and phase filter for detection |
| JP2002071513A (en) | 2000-08-28 | 2002-03-08 | Nikon Corp | Interferometer for immersion microscope objective lens and method of evaluating immersion microscope objective lens |
| JP4504537B2 (en) | 2000-08-29 | 2010-07-14 | 芝浦メカトロニクス株式会社 | Spin processing equipment |
| JP2002093686A (en) | 2000-09-19 | 2002-03-29 | Nikon Corp | Stage device and exposure device |
| JP2002093690A (en) | 2000-09-19 | 2002-03-29 | Hitachi Ltd | Method for manufacturing semiconductor device |
| JP2002091922A (en) | 2000-09-20 | 2002-03-29 | Fujitsu General Ltd | Application software and content distribution management method and distribution management system |
| JP3682404B2 (en) | 2000-10-03 | 2005-08-10 | 日本無線株式会社 | Mobile communication system |
| JP4245286B2 (en) | 2000-10-23 | 2009-03-25 | 株式会社ニコン | Catadioptric optical system and exposure apparatus provided with the optical system |
| JP2002141270A (en) | 2000-11-01 | 2002-05-17 | Nikon Corp | Exposure equipment |
| US20020075467A1 (en) | 2000-12-20 | 2002-06-20 | Nikon Corporation | Exposure apparatus and method |
| JP2002158157A (en) | 2000-11-17 | 2002-05-31 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and method for manufacturing microdevice |
| JP2002170495A (en) | 2000-11-28 | 2002-06-14 | Akira Sekino | Integrate barrier rib synthetic resin rear substrate |
| JP2002231619A (en) | 2000-11-29 | 2002-08-16 | Nikon Corp | Illumination optical device and exposure apparatus having the illumination optical device |
| JP2002190438A (en) | 2000-12-21 | 2002-07-05 | Nikon Corp | Exposure equipment |
| JP2002198284A (en) | 2000-12-25 | 2002-07-12 | Nikon Corp | Stage equipment and exposure equipment |
| JP2002203763A (en) | 2000-12-27 | 2002-07-19 | Nikon Corp | Optical characteristic measuring method and apparatus, signal sensitivity setting method, exposure apparatus, and device manufacturing method |
| JP2002195912A (en) | 2000-12-27 | 2002-07-10 | Nikon Corp | Optical characteristic measuring method and apparatus, exposure apparatus, and device manufacturing method |
| JP2002202221A (en) | 2000-12-28 | 2002-07-19 | Nikon Corp | Position detecting method, position detecting device, optical characteristic measuring method, optical characteristic measuring device, exposure apparatus, and device manufacturing method |
| JP3495992B2 (en) | 2001-01-26 | 2004-02-09 | キヤノン株式会社 | Correction apparatus, exposure apparatus, device manufacturing method and device |
| US6563566B2 (en) | 2001-01-29 | 2003-05-13 | International Business Machines Corporation | System and method for printing semiconductor patterns using an optimized illumination and reticle |
| JP2002227924A (en) | 2001-01-31 | 2002-08-14 | Canon Inc | Vibration control damper and exposure apparatus with vibration control damper |
| SE0100336L (en) * | 2001-02-05 | 2002-08-06 | Micronic Laser Systems Ab | Addressing method and apparatus using the same technical area |
| KR20040007444A (en) | 2001-02-06 | 2004-01-24 | 가부시키가이샤 니콘 | Exposure system and exposure method, and device production method |
| TWI285295B (en) | 2001-02-23 | 2007-08-11 | Asml Netherlands Bv | Illumination optimization in lithography |
| DE10113612A1 (en) | 2001-02-23 | 2002-09-05 | Zeiss Carl | Sub-objective for illumination system has two lens groups, second lens group with at least first lens with negative refractive index and at least second lens with positive refractive index |
| KR100815222B1 (en) | 2001-02-27 | 2008-03-19 | 에이에스엠엘 유에스, 인크. | A method of exposing a field on a substrate stage with an image from a lithographic apparatus and at least two patterns formed on at least one reticle |
| JP2002258487A (en) | 2001-02-28 | 2002-09-11 | Nikon Corp | Exposure method and exposure apparatus |
| JP4501292B2 (en) | 2001-03-05 | 2010-07-14 | コニカミノルタホールディングス株式会社 | Coating substrate, coating material coating method, and element manufacturing method |
| JP2002289505A (en) | 2001-03-28 | 2002-10-04 | Nikon Corp | Exposure apparatus, method of adjusting exposure apparatus, method of manufacturing micro device |
| WO2002080185A1 (en) | 2001-03-28 | 2002-10-10 | Nikon Corporation | Stage device, exposure device, and method of manufacturing device |
| JP2002365783A (en) | 2001-04-05 | 2002-12-18 | Sony Corp | Apparatus for producing mask pattern, apparatus and method for producing high-resolution mask, and method for forming resist pattern |
| JP2002305140A (en) | 2001-04-06 | 2002-10-18 | Nikon Corp | Exposure apparatus and substrate processing system |
| WO2002084850A1 (en) | 2001-04-09 | 2002-10-24 | Kabushiki Kaisha Yaskawa Denki | Canned linear motor armature and canned linear motor |
| JP2002324743A (en) | 2001-04-24 | 2002-11-08 | Canon Inc | Exposure method and apparatus |
| JP2002329651A (en) | 2001-04-27 | 2002-11-15 | Nikon Corp | Exposure apparatus, method of manufacturing exposure apparatus, and method of manufacturing micro device |
| DE10124566A1 (en) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Optical imaging system with polarizing agents and quartz crystal plate therefor |
| DE10124803A1 (en) | 2001-05-22 | 2002-11-28 | Zeiss Carl | Polarizer and microlithography projection system with polarizer |
| JP2002353105A (en) | 2001-05-24 | 2002-12-06 | Nikon Corp | Illumination optical device, exposure apparatus having the illumination optical device, and method for manufacturing microdevice |
| JP4622160B2 (en) | 2001-05-31 | 2011-02-02 | 旭硝子株式会社 | Diffraction grating integrated optical rotator and optical head device |
| JP2002359174A (en) | 2001-05-31 | 2002-12-13 | Mitsubishi Electric Corp | EXPOSURE PROCESS MANAGEMENT SYSTEM, EXPOSURE PROCESS MANAGEMENT METHOD, AND PROGRAM FOR MANAGING EXPOSURE PROCESS |
| KR100576746B1 (en) * | 2001-06-01 | 2006-05-03 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product |
| US7015491B2 (en) * | 2001-06-01 | 2006-03-21 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby, control system |
| JP4689081B2 (en) | 2001-06-06 | 2011-05-25 | キヤノン株式会社 | Exposure apparatus, adjustment method, and device manufacturing method |
| JP3734432B2 (en) | 2001-06-07 | 2006-01-11 | 三星電子株式会社 | Mask transfer device, mask transfer system, and mask transfer method |
| JPWO2002101804A1 (en) | 2001-06-11 | 2004-09-30 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and temperature stabilized flow path apparatus |
| JP2002367523A (en) | 2001-06-12 | 2002-12-20 | Matsushita Electric Ind Co Ltd | Plasma display panel and method of manufacturing plasma display panel |
| WO2002103766A1 (en) | 2001-06-13 | 2002-12-27 | Nikon Corporation | Scanning exposure method and scanning exposure system, and device production method |
| JP2002373849A (en) | 2001-06-15 | 2002-12-26 | Canon Inc | Exposure equipment |
| US6788385B2 (en) | 2001-06-21 | 2004-09-07 | Nikon Corporation | Stage device, exposure apparatus and method |
| JP2003017003A (en) | 2001-07-04 | 2003-01-17 | Canon Inc | Lamp and light source device |
| JP2003015040A (en) | 2001-07-04 | 2003-01-15 | Nikon Corp | Projection optical system and exposure apparatus having the projection optical system |
| JP2003028673A (en) | 2001-07-10 | 2003-01-29 | Canon Inc | Optical encoder, semiconductor manufacturing apparatus, device manufacturing method, semiconductor manufacturing factory, and semiconductor manufacturing apparatus maintenance method |
| EP1280007B1 (en) | 2001-07-24 | 2008-06-18 | ASML Netherlands B.V. | Imaging apparatus |
| JP2003045712A (en) | 2001-07-26 | 2003-02-14 | Japan Aviation Electronics Industry Ltd | Waterproof coil and manufacturing method thereof |
| JP4522024B2 (en) | 2001-07-27 | 2010-08-11 | キヤノン株式会社 | Mercury lamp, illumination device and exposure device |
| JP2003043223A (en) | 2001-07-30 | 2003-02-13 | Nikon Corp | Beam splitter and wave plate made of crystalline material, and optical device, exposure device, and inspection device having these crystal optical components |
| JP2003059803A (en) | 2001-08-14 | 2003-02-28 | Canon Inc | Exposure equipment |
| JP2003059286A (en) | 2001-08-20 | 2003-02-28 | Mitsubishi Electric Corp | Semiconductor device |
| JP2003068600A (en) | 2001-08-22 | 2003-03-07 | Canon Inc | Exposure apparatus and substrate chuck cooling method |
| JP4183166B2 (en) | 2001-08-31 | 2008-11-19 | 京セラ株式会社 | Positioning device components |
| JP2003075703A (en) | 2001-08-31 | 2003-03-12 | Konica Corp | Optical unit and optical device |
| JP2003081654A (en) | 2001-09-06 | 2003-03-19 | Toshiba Ceramics Co Ltd | Synthetic quartz glass and method for producing the same |
| JPWO2003023832A1 (en) | 2001-09-07 | 2004-12-24 | 株式会社ニコン | Exposure method and apparatus, and device manufacturing method |
| US6819490B2 (en) * | 2001-09-10 | 2004-11-16 | Micronic Laser Systems Ab | Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece |
| SE0103006D0 (en) | 2001-09-10 | 2001-09-10 | Micronic Lasersystems Ab | Homogenization of a spatially coherent radiation beam and reading / writing of a pattern on a workpiece |
| JP2003084445A (en) | 2001-09-13 | 2003-03-19 | Canon Inc | Scanning exposure apparatus and exposure method |
| JP4160286B2 (en) | 2001-09-21 | 2008-10-01 | 東芝マイクロエレクトロニクス株式会社 | LSI pattern dimension measurement location selection method |
| JP3910032B2 (en) | 2001-09-25 | 2007-04-25 | 大日本スクリーン製造株式会社 | Substrate developing device |
| JP4082160B2 (en) | 2001-10-01 | 2008-04-30 | ソニー株式会社 | Prism and projection device |
| EP1694079B1 (en) | 2001-10-01 | 2008-07-23 | Sony Corporation | Polarization selecting prism for a projection device |
| JP2003114387A (en) | 2001-10-04 | 2003-04-18 | Nikon Corp | Catadioptric optical system and projection exposure apparatus having the optical system |
| JP4412450B2 (en) | 2001-10-05 | 2010-02-10 | 信越化学工業株式会社 | Anti-reflective filter |
| JP2003124095A (en) | 2001-10-11 | 2003-04-25 | Nikon Corp | Projection exposure method and apparatus, and device manufacturing method |
| JP2003130132A (en) | 2001-10-22 | 2003-05-08 | Nec Ameniplantex Ltd | Vibration isolation mechanism |
| US6577379B1 (en) * | 2001-11-05 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate |
| JP4362999B2 (en) | 2001-11-12 | 2009-11-11 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP3809095B2 (en) | 2001-11-29 | 2006-08-16 | ペンタックス株式会社 | Light source system for exposure apparatus and exposure apparatus |
| JP2003161882A (en) | 2001-11-29 | 2003-06-06 | Nikon Corp | Projection optical system, exposure apparatus and exposure method |
| JP2003166856A (en) | 2001-11-29 | 2003-06-13 | Fuji Electric Co Ltd | Optical encoder |
| JP3945569B2 (en) | 2001-12-06 | 2007-07-18 | 東京応化工業株式会社 | Development device |
| JP2003188087A (en) | 2001-12-21 | 2003-07-04 | Sony Corp | Exposure method, exposure apparatus, and method of manufacturing semiconductor device |
| JP2003249443A (en) | 2001-12-21 | 2003-09-05 | Nikon Corp | Stage apparatus, stage position management method, exposure method, exposure apparatus, and device manufacturing method |
| US6577429B1 (en) * | 2002-01-15 | 2003-06-10 | Eastman Kodak Company | Laser projection display system |
| TW200302507A (en) | 2002-01-21 | 2003-08-01 | Nikon Corp | Stage device and exposure device |
| JP3809381B2 (en) | 2002-01-28 | 2006-08-16 | キヤノン株式会社 | Linear motor, stage apparatus, exposure apparatus, and device manufacturing method |
| JP2003229347A (en) | 2002-01-31 | 2003-08-15 | Canon Inc | Semiconductor manufacturing equipment |
| JP2003233001A (en) | 2002-02-07 | 2003-08-22 | Canon Inc | Reflection type projection optical system, exposure apparatus and device manufacturing method |
| JP2003240906A (en) | 2002-02-20 | 2003-08-27 | Dainippon Printing Co Ltd | Antireflection body and method of manufacturing the same |
| JP2003258071A (en) | 2002-02-28 | 2003-09-12 | Nikon Corp | Substrate holding device and exposure device |
| WO2003075328A1 (en) * | 2002-03-01 | 2003-09-12 | Nikon Corporation | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method |
| JP2003263119A (en) | 2002-03-07 | 2003-09-19 | Fuji Xerox Co Ltd | Rib-attached electrode and its manufacturing method |
| JP3984841B2 (en) | 2002-03-07 | 2007-10-03 | キヤノン株式会社 | Distortion measuring apparatus, distortion suppressing apparatus, exposure apparatus, and device manufacturing method |
| DE10210899A1 (en) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refractive projection lens for immersion lithography |
| JP3975787B2 (en) | 2002-03-12 | 2007-09-12 | ソニー株式会社 | Solid-state image sensor |
| JP4100011B2 (en) | 2002-03-13 | 2008-06-11 | セイコーエプソン株式会社 | Surface treatment apparatus, organic EL device manufacturing apparatus, and manufacturing method |
| JP4335495B2 (en) | 2002-03-27 | 2009-09-30 | 株式会社日立ハイテクノロジーズ | Constant pressure chamber, irradiation apparatus using the same, and circuit pattern inspection apparatus |
| JP2003297727A (en) | 2002-04-03 | 2003-10-17 | Nikon Corp | Illumination optical device, exposure apparatus and exposure method |
| EP1494267A4 (en) | 2002-04-09 | 2008-01-30 | Nikon Corp | Exposure method, exposure device, and device manufacturing method |
| JP2004006440A (en) | 2002-04-10 | 2004-01-08 | Fuji Photo Film Co Ltd | Laser apparatus, exposure head, and exposure device |
| US6960035B2 (en) | 2002-04-10 | 2005-11-01 | Fuji Photo Film Co., Ltd. | Laser apparatus, exposure head, exposure apparatus, and optical fiber connection method |
| CN1659479A (en) * | 2002-04-10 | 2005-08-24 | 富士胶片株式会社 | Exposure head, exposure apparatus, and application thereof |
| DE10310690A1 (en) | 2002-04-12 | 2003-10-30 | Heidelberger Druckmasch Ag | Sheet guide in sheet-processing machine especially rotary printer has pick-up pieces, free air jet nozzles and air cushion |
| US20050095749A1 (en) * | 2002-04-29 | 2005-05-05 | Mathias Krellmann | Device for protecting a chip and method for operating a chip |
| JP4324957B2 (en) * | 2002-05-27 | 2009-09-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4037179B2 (en) | 2002-06-04 | 2008-01-23 | 東京エレクトロン株式会社 | Cleaning method, cleaning device |
| JP2004015187A (en) | 2002-06-04 | 2004-01-15 | Fuji Photo Film Co Ltd | Photographing auxiliary system, digital camera, and server |
| JP2004014876A (en) | 2002-06-07 | 2004-01-15 | Nikon Corp | Adjustment method, method for measuring spatial image, method for measuring image surface, and exposure device |
| DE60319462T2 (en) * | 2002-06-11 | 2009-03-12 | Asml Netherlands B.V. | Lithographic apparatus and method for making an article |
| JP2004022708A (en) | 2002-06-14 | 2004-01-22 | Nikon Corp | Imaging optical system, illumination optical system, exposure apparatus and exposure method |
| JP2004179172A (en) | 2002-06-26 | 2004-06-24 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| JP4012771B2 (en) | 2002-06-28 | 2007-11-21 | 富士通エフ・アイ・ピー株式会社 | License management method, license management system, license management program |
| JP2004039952A (en) | 2002-07-05 | 2004-02-05 | Tokyo Electron Ltd | Plasma treatment apparatus and monitoring method thereof |
| JP2004040039A (en) | 2002-07-08 | 2004-02-05 | Sony Corp | How to choose the exposure method |
| JP2004045063A (en) | 2002-07-09 | 2004-02-12 | Topcon Corp | Method of manufacturing optical rotary encoder plate and optical rotary encoder plate |
| JP2004063847A (en) | 2002-07-30 | 2004-02-26 | Nikon Corp | Exposure apparatus, exposure method, and stage apparatus |
| JP2004071851A (en) | 2002-08-07 | 2004-03-04 | Canon Inc | Semiconductor exposure method and exposure apparatus |
| JP2004085612A (en) | 2002-08-22 | 2004-03-18 | Matsushita Electric Ind Co Ltd | Halftone phase shift mask, manufacturing method thereof, and pattern forming method using the same |
| JP4095376B2 (en) | 2002-08-28 | 2008-06-04 | キヤノン株式会社 | Exposure apparatus and method, and device manufacturing method |
| JP2004095653A (en) | 2002-08-29 | 2004-03-25 | Nikon Corp | Exposure equipment |
| JP4214547B2 (en) | 2002-08-29 | 2009-01-28 | 株式会社オーク製作所 | Beam shaping optical element and pattern writing apparatus having the same |
| JP2004145269A (en) | 2002-08-30 | 2004-05-20 | Nikon Corp | Projection optical system, catadioptric projection optical system, scanning exposure apparatus and exposure method |
| US20050141583A1 (en) * | 2002-09-02 | 2005-06-30 | Torbjorn Sandstrom | Method and device for coherence reduction |
| EP1395049A1 (en) | 2002-09-02 | 2004-03-03 | Sony International (Europe) GmbH | Illumination unit for a projection system |
| SE0202584D0 (en) | 2002-09-02 | 2002-09-02 | Micronic Laser Systems Ab | A method and device for coherence reduction |
| JP2004103674A (en) | 2002-09-06 | 2004-04-02 | Renesas Technology Corp | Method of manufacturing semiconductor integrated circuit device |
| JP2004101362A (en) | 2002-09-10 | 2004-04-02 | Canon Inc | Stage position measurement and positioning device |
| JP2004098012A (en) | 2002-09-12 | 2004-04-02 | Seiko Epson Corp | Thin film forming method, thin film forming apparatus, optical element, organic electroluminescent element, semiconductor element, and electronic equipment |
| JP2004111579A (en) * | 2002-09-17 | 2004-04-08 | Canon Inc | Exposure method and apparatus |
| JP4269610B2 (en) | 2002-09-17 | 2009-05-27 | 株式会社ニコン | Exposure apparatus and method of manufacturing exposure apparatus |
| KR100480620B1 (en) * | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | Exposing equipment including a Micro Mirror Array and exposing method using the exposing equipment |
| JP2004119497A (en) | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | Semiconductor manufacturing facilities and methods |
| JP4333866B2 (en) | 2002-09-26 | 2009-09-16 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| US6958867B2 (en) * | 2002-09-30 | 2005-10-25 | Fuji Photo Film Co., Ltd. | Illumination optical system, exposure device using the illumination optical system, and exposure method |
| JP2005018013A (en) | 2002-09-30 | 2005-01-20 | Fuji Photo Film Co Ltd | Illumination optical system, and aligner and exposure method using it |
| JP2004128307A (en) | 2002-10-04 | 2004-04-22 | Nikon Corp | Exposure apparatus and adjustment method thereof |
| JP2004134682A (en) | 2002-10-15 | 2004-04-30 | Nikon Corp | Gas cylinder, stage device and exposure device |
| US6665119B1 (en) * | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
| JP2004140145A (en) | 2002-10-17 | 2004-05-13 | Nikon Corp | Exposure equipment |
| JP2004146702A (en) | 2002-10-25 | 2004-05-20 | Nikon Corp | Optical property measuring method, exposure method and device manufacturing method |
| JP2004153096A (en) | 2002-10-31 | 2004-05-27 | Nikon Corp | Exposure equipment |
| JP2004153064A (en) | 2002-10-31 | 2004-05-27 | Nikon Corp | Exposure equipment |
| JP2004152705A (en) | 2002-11-01 | 2004-05-27 | Matsushita Electric Ind Co Ltd | Method for manufacturing organic electroluminescence device |
| JP2004165249A (en) | 2002-11-11 | 2004-06-10 | Sony Corp | Exposure apparatus and exposure method |
| TWI251127B (en) | 2002-11-12 | 2006-03-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP2004163555A (en) | 2002-11-12 | 2004-06-10 | Olympus Corp | Vertical illumination microscope and objective for vertical illumination microscope |
| JP2004165416A (en) | 2002-11-13 | 2004-06-10 | Nikon Corp | Exposure equipment and building |
| JP2004172471A (en) | 2002-11-21 | 2004-06-17 | Nikon Corp | Exposure method and exposure apparatus |
| JP4378938B2 (en) | 2002-11-25 | 2009-12-09 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| US6844927B2 (en) * | 2002-11-27 | 2005-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for removing optical abberations during an optical inspection |
| TWI281099B (en) * | 2002-12-02 | 2007-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TW200412617A (en) | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| JP4314555B2 (en) | 2002-12-03 | 2009-08-19 | 株式会社ニコン | Linear motor device, stage device, and exposure device |
| JP4232449B2 (en) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| US20040108973A1 (en) | 2002-12-10 | 2004-06-10 | Kiser David K. | Apparatus for generating a number of color light components |
| AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| WO2004053957A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
| JP2004301825A (en) | 2002-12-10 | 2004-10-28 | Nikon Corp | Surface position detecting device, exposure method, and device manufacturing method |
| CN101872135B (en) | 2002-12-10 | 2013-07-31 | 株式会社尼康 | Exposure system and device producing method |
| JP4595320B2 (en) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| KR101157002B1 (en) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
| DE10257766A1 (en) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Method for setting a desired optical property of a projection lens and microlithographic projection exposure system |
| KR101037057B1 (en) | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | Exposure apparatus and device manufacturing method |
| WO2004053959A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Optical device and projection exposure apparatus using such optical device |
| WO2004053951A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
| EP1571701A4 (en) | 2002-12-10 | 2008-04-09 | Nikon Corp | Exposure apparatus and method for manufacturing device |
| JP4352874B2 (en) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| JP2004193425A (en) | 2002-12-12 | 2004-07-08 | Nikon Corp | Movement control method and apparatus, exposure apparatus, and device manufacturing method |
| JP2004198748A (en) | 2002-12-19 | 2004-07-15 | Nikon Corp | Optical integrator, illumination optical device, exposure apparatus, and exposure method |
| JP2004205698A (en) | 2002-12-24 | 2004-07-22 | Nikon Corp | Projection optical system, exposure apparatus and exposure method |
| US6891655B2 (en) * | 2003-01-02 | 2005-05-10 | Micronic Laser Systems Ab | High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices |
| JP2004221253A (en) | 2003-01-14 | 2004-08-05 | Nikon Corp | Exposure equipment |
| CN1723384A (en) * | 2003-01-15 | 2006-01-18 | 麦克罗尼克激光系统公司 | Method to detect a defective element |
| JP2004228497A (en) | 2003-01-27 | 2004-08-12 | Nikon Corp | Exposure apparatus and electronic device manufacturing method |
| JP2004224421A (en) | 2003-01-27 | 2004-08-12 | Tokyo Autom Mach Works Ltd | Product feeding apparatus |
| JP4280509B2 (en) | 2003-01-31 | 2009-06-17 | キヤノン株式会社 | Projection exposure mask, projection exposure mask manufacturing method, projection exposure apparatus, and projection exposure method |
| JP2004241666A (en) | 2003-02-07 | 2004-08-26 | Nikon Corp | Measurement method and exposure method |
| JP2004007417A (en) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | Information provision system |
| JP4366948B2 (en) | 2003-02-14 | 2009-11-18 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2004259828A (en) | 2003-02-25 | 2004-09-16 | Nikon Corp | Semiconductor exposure equipment |
| TWI621923B (en) | 2003-02-26 | 2018-04-21 | 尼康股份有限公司 | Exposure apparatus, exposure method, and component manufacturing method |
| JP4604452B2 (en) | 2003-02-26 | 2011-01-05 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP2004259985A (en) | 2003-02-26 | 2004-09-16 | Sony Corp | Resist pattern forming apparatus, method of forming the same, and method of manufacturing semiconductor device using the method |
| JP4305003B2 (en) | 2003-02-27 | 2009-07-29 | 株式会社ニコン | EUV optical system and EUV exposure apparatus |
| JP2004260115A (en) | 2003-02-27 | 2004-09-16 | Nikon Corp | Stage apparatus, exposure apparatus, and device manufacturing method |
| JP2004260081A (en) | 2003-02-27 | 2004-09-16 | Nikon Corp | Ultraviolet reflection mirror device and projection exposure apparatus using the same |
| SE0300516D0 (en) | 2003-02-28 | 2003-02-28 | Micronic Laser Systems Ab | SLM direct writer |
| EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
| JP2004294202A (en) | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | Screen defect detection method and apparatus |
| JP4265257B2 (en) | 2003-03-28 | 2009-05-20 | 株式会社ニコン | Exposure apparatus, exposure method, and film structure |
| JP4496711B2 (en) | 2003-03-31 | 2010-07-07 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2004304135A (en) | 2003-04-01 | 2004-10-28 | Nikon Corp | Exposure apparatus, exposure method, and method for manufacturing micro device |
| JP4288413B2 (en) | 2003-04-07 | 2009-07-01 | 株式会社ニコン | Quartz glass molding method and molding apparatus |
| WO2004091079A1 (en) | 2003-04-07 | 2004-10-21 | Kabushiki Kaisha Yaskawa Denki | Canned linear motor armature and canned linear motor |
| JP4374964B2 (en) | 2003-09-26 | 2009-12-02 | 株式会社ニコン | Quartz glass molding method and molding apparatus |
| JP4465974B2 (en) | 2003-04-07 | 2010-05-26 | 株式会社ニコン | Quartz glass molding equipment |
| JP4281397B2 (en) | 2003-04-07 | 2009-06-17 | 株式会社ニコン | Quartz glass molding equipment |
| JP4341277B2 (en) | 2003-04-07 | 2009-10-07 | 株式会社ニコン | Method of forming quartz glass |
| WO2004090956A1 (en) | 2003-04-07 | 2004-10-21 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| JP4428115B2 (en) | 2003-04-11 | 2010-03-10 | 株式会社ニコン | Immersion lithography system |
| JP2004319724A (en) | 2003-04-16 | 2004-11-11 | Ses Co Ltd | Structure of washing tub in semiconductor washing apparatus |
| JPWO2004094940A1 (en) | 2003-04-23 | 2006-07-13 | 株式会社ニコン | Interferometer system, signal processing method in interferometer system, and stage using the signal processing method |
| JP2004327660A (en) | 2003-04-24 | 2004-11-18 | Nikon Corp | Scanning projection exposure apparatus, exposure method, and device manufacturing method |
| JP2004335808A (en) | 2003-05-08 | 2004-11-25 | Sony Corp | Pattern transfer device, pattern transfer method and program |
| JP4487168B2 (en) | 2003-05-09 | 2010-06-23 | 株式会社ニコン | Stage apparatus, driving method thereof, and exposure apparatus |
| JP2004335864A (en) | 2003-05-09 | 2004-11-25 | Nikon Corp | Exposure apparatus and exposure method |
| JP2004342987A (en) | 2003-05-19 | 2004-12-02 | Canon Inc | Stage equipment |
| TW200507055A (en) | 2003-05-21 | 2005-02-16 | Nikon Corp | Polarized cancellation element, illumination device, exposure device, and exposure method |
| TWI612556B (en) | 2003-05-23 | 2018-01-21 | 尼康股份有限公司 | Exposure apparatus, exposure method, and component manufacturing method |
| TWI612557B (en) | 2003-05-23 | 2018-01-21 | Nikon Corporation | Exposure method and exposure apparatus and component manufacturing method |
| JP2004349645A (en) | 2003-05-26 | 2004-12-09 | Sony Corp | Immersion differential drainage static pressure floating pad, master exposure apparatus and exposure method using immersion differential drainage |
| KR101548832B1 (en) | 2003-05-28 | 2015-09-01 | 가부시키가이샤 니콘 | Exposure method, exposure device, and device manufacturing method |
| US20040239901A1 (en) | 2003-05-29 | 2004-12-02 | Asml Holding N.V. | System and method for producing gray scaling using multiple spatial light modulators in a maskless lithography system |
| JP2004356410A (en) | 2003-05-29 | 2004-12-16 | Nikon Corp | Exposure apparatus and exposure method |
| DE10324477A1 (en) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Microlithographic projection exposure system |
| KR101087516B1 (en) | 2003-06-04 | 2011-11-28 | 가부시키가이샤 니콘 | Stage apparatus, fixing method, exposure apparatus, exposure method, and device manufacturing method |
| JP2005005295A (en) | 2003-06-09 | 2005-01-06 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2005005395A (en) | 2003-06-10 | 2005-01-06 | Nikon Corp | Gas supply / exhaust method and apparatus, lens barrel, exposure apparatus and method |
| JP2005005521A (en) | 2003-06-12 | 2005-01-06 | Nikon Corp | Exposure apparatus, exposure method, and polarization state measuring apparatus |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| TWI564933B (en) | 2003-06-19 | 2017-01-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
| JP2005011990A (en) | 2003-06-19 | 2005-01-13 | Nikon Corp | Scanning projection exposure apparatus, illuminance calibration method and exposure method for scanning projection exposure apparatus |
| JP2005019628A (en) | 2003-06-25 | 2005-01-20 | Nikon Corp | Optical apparatus, exposure apparatus, and device manufacturing method |
| JP3862678B2 (en) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2005026634A (en) | 2003-07-04 | 2005-01-27 | Sony Corp | Exposure apparatus and semiconductor device manufacturing method |
| JP4515385B2 (en) | 2003-07-09 | 2010-07-28 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| WO2005006418A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| JP2005032909A (en) | 2003-07-10 | 2005-02-03 | Fuji Photo Film Co Ltd | Lighting optical system and aligner using it |
| WO2005008754A1 (en) | 2003-07-18 | 2005-01-27 | Nikon Corporation | Flare measurement method, exposure method, and flare measurement mask |
| JP4492600B2 (en) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4492239B2 (en) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and exposure apparatus control method |
| JP2005051147A (en) | 2003-07-31 | 2005-02-24 | Nikon Corp | Exposure method and exposure apparatus |
| JP2005055811A (en) | 2003-08-07 | 2005-03-03 | Olympus Corp | Optical member, optical apparatus having the optical member incorporated therein, and method of assembling the optical apparatus |
| JP4101148B2 (en) | 2003-10-10 | 2008-06-18 | 古河電気工業株式会社 | Optical fiber and optical signal processing apparatus using the optical fiber |
| JP2005064210A (en) | 2003-08-12 | 2005-03-10 | Nikon Corp | EXPOSURE METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD USING THE EXPOSURE METHOD, AND EXPOSURE APPARATUS |
| JP4262031B2 (en) | 2003-08-19 | 2009-05-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP4305095B2 (en) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | Immersion projection exposure apparatus equipped with an optical component cleaning mechanism and immersion optical component cleaning method |
| EP1659620A4 (en) | 2003-08-29 | 2008-01-30 | Nikon Corp | LIQUID RECOVERY DEVICE, EXPOSURE DEVICE, EXPOSURE METHOD, AND CORRESPONDING PRODUCTION DEVICE |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4218475B2 (en) | 2003-09-11 | 2009-02-04 | 株式会社ニコン | Extreme ultraviolet optical system and exposure apparatus |
| EP1668421A2 (en) | 2003-09-12 | 2006-06-14 | Carl Zeiss SMT AG | Illumination system for a microlithography projection exposure installation |
| JP2005091023A (en) | 2003-09-12 | 2005-04-07 | Minolta Co Ltd | Optical encoder and imaging device equipped therewith |
| DE10343333A1 (en) | 2003-09-12 | 2005-04-14 | Carl Zeiss Smt Ag | Illumination system for microlithography projection exposure system, has mirror arrangement with array of individual mirrors that is controlled individually by changing angular distribution of light incident on mirror arrangement |
| JP2005093324A (en) | 2003-09-19 | 2005-04-07 | Toshiba Corp | Glass substrate used for image display device, glass substrate manufacturing method, and glass substrate manufacturing apparatus |
| JP2005093948A (en) | 2003-09-19 | 2005-04-07 | Nikon Corp | Exposure apparatus and adjustment method thereof, exposure method, and device manufacturing method |
| JP4444920B2 (en) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| TW200521477A (en) | 2003-09-25 | 2005-07-01 | Matsushita Electric Industrial Co Ltd | Projector and projection method |
| JP2005123586A (en) | 2003-09-25 | 2005-05-12 | Matsushita Electric Ind Co Ltd | Projection apparatus and projection method |
| WO2005031292A1 (en) * | 2003-09-26 | 2005-04-07 | Tidal Photonics, Inc. | Apparatus and methods relating to enhanced spectral measurement systems |
| JP4385702B2 (en) | 2003-09-29 | 2009-12-16 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP4470433B2 (en) | 2003-10-02 | 2010-06-02 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4513299B2 (en) | 2003-10-02 | 2010-07-28 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP2005114882A (en) | 2003-10-06 | 2005-04-28 | Hitachi High-Tech Electronics Engineering Co Ltd | Substrate mounting method for processing stage, substrate exposure stage, and substrate exposure apparatus |
| EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | APPARATUS AND METHOD FOR TRANSPORTING SUBSTRATE, APPARATUS AND METHOD FOR EXPOSING, AND DEVICE PRODUCING METHOD |
| JP2005116831A (en) | 2003-10-08 | 2005-04-28 | Nikon Corp | Projection exposure apparatus, exposure method, and device manufacturing method |
| JP2005136364A (en) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | Substrate transport apparatus, exposure apparatus, and device manufacturing method |
| JPWO2005036619A1 (en) | 2003-10-09 | 2007-11-22 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| WO2005036620A1 (en) | 2003-10-10 | 2005-04-21 | Nikon Corporation | Exposure method, exposure device, and device manufacturing method |
| EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005127460A (en) | 2003-10-27 | 2005-05-19 | Mitsubishi Heavy Ind Ltd | Base isolation and quake removing floor system |
| JP4605014B2 (en) | 2003-10-28 | 2011-01-05 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| US7148952B2 (en) * | 2003-10-31 | 2006-12-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005140999A (en) | 2003-11-06 | 2005-06-02 | Nikon Corp | Optical system, optical system adjustment method, exposure apparatus, and exposure method |
| WO2005048326A1 (en) | 2003-11-13 | 2005-05-26 | Nikon Corporation | Variable slit apparatus, illumination apparatus, exposure apparatus, exposure method, and device producing method |
| JPWO2005048325A1 (en) | 2003-11-17 | 2007-11-29 | 株式会社ニコン | Stage driving method, stage apparatus, and exposure apparatus |
| JP4470095B2 (en) | 2003-11-20 | 2010-06-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4552428B2 (en) | 2003-12-02 | 2010-09-29 | 株式会社ニコン | Illumination optical apparatus, projection exposure apparatus, exposure method, and device manufacturing method |
| JP2005175177A (en) | 2003-12-11 | 2005-06-30 | Nikon Corp | Optical apparatus and exposure apparatus |
| JP2005175176A (en) | 2003-12-11 | 2005-06-30 | Nikon Corp | Exposure method and device manufacturing method |
| KR101499405B1 (en) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | Stage system, exposure apparatus and exposure method |
| JP3102327U (en) | 2003-12-17 | 2004-07-02 | 国統国際股▲ふん▼有限公司 | Flexible tube leakage prevention mechanism |
| JP4954444B2 (en) | 2003-12-26 | 2012-06-13 | 株式会社ニコン | Channel forming member, exposure apparatus, and device manufacturing method |
| KR20180117228A (en) | 2004-01-05 | 2018-10-26 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device producing method |
| JP4586367B2 (en) | 2004-01-14 | 2010-11-24 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| JP2005209705A (en) | 2004-01-20 | 2005-08-04 | Nikon Corp | Exposure apparatus and device manufacturing method |
| JP4474927B2 (en) | 2004-01-20 | 2010-06-09 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| WO2005071717A1 (en) | 2004-01-26 | 2005-08-04 | Nikon Corporation | Exposure apparatus and device producing method |
| US7580559B2 (en) * | 2004-01-29 | 2009-08-25 | Asml Holding N.V. | System and method for calibrating a spatial light modulator |
| US7990516B2 (en) | 2004-02-03 | 2011-08-02 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with liquid detection apparatus |
| JP4548341B2 (en) | 2004-02-10 | 2010-09-22 | 株式会社ニコン | Exposure apparatus, device manufacturing method, maintenance method, and exposure method |
| JP4370992B2 (en) | 2004-02-18 | 2009-11-25 | 株式会社ニコン | Optical element and exposure apparatus |
| WO2005081291A1 (en) | 2004-02-19 | 2005-09-01 | Nikon Corporation | Exposure apparatus and method of producing device |
| JP2005234359A (en) | 2004-02-20 | 2005-09-02 | Ricoh Co Ltd | Scanning optical system optical characteristic measuring apparatus, scanning optical system optical characteristic measuring apparatus calibration method, scanning optical system, and image forming apparatus |
| JP4693088B2 (en) | 2004-02-20 | 2011-06-01 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP5076497B2 (en) | 2004-02-20 | 2012-11-21 | 株式会社ニコン | Exposure apparatus, liquid supply method and recovery method, exposure method, and device manufacturing method |
| JP4333404B2 (en) | 2004-02-25 | 2009-09-16 | 株式会社ニコン | Conveying apparatus, conveying method, exposure apparatus, exposure method, and device manufacturing method |
| JP2005243904A (en) | 2004-02-26 | 2005-09-08 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2005243870A (en) | 2004-02-26 | 2005-09-08 | Pentax Corp | Pattern drawing device |
| JP4864869B2 (en) * | 2004-02-26 | 2012-02-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system for microlithographic projection exposure apparatus |
| US6977718B1 (en) * | 2004-03-02 | 2005-12-20 | Advanced Micro Devices, Inc. | Lithography method and system with adjustable reflector |
| JP2005251549A (en) | 2004-03-04 | 2005-09-15 | Nikon Corp | Microswitch and driving method of microswitch |
| JP2005259789A (en) | 2004-03-09 | 2005-09-22 | Nikon Corp | Detection system, exposure apparatus, and device manufacturing method |
| JP2005257740A (en) | 2004-03-09 | 2005-09-22 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| JP4778685B2 (en) | 2004-03-10 | 2011-09-21 | 株式会社日立ハイテクノロジーズ | Pattern shape evaluation method and apparatus for semiconductor device |
| JP2005268700A (en) | 2004-03-22 | 2005-09-29 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2005276932A (en) | 2004-03-23 | 2005-10-06 | Nikon Corp | Exposure apparatus and device manufacturing method |
| JP2005309380A (en) * | 2004-03-26 | 2005-11-04 | Fuji Photo Film Co Ltd | Image exposure device |
| JP2005302825A (en) * | 2004-04-07 | 2005-10-27 | Canon Inc | Exposure system |
| JP4474979B2 (en) | 2004-04-15 | 2010-06-09 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| EP2490248A3 (en) | 2004-04-19 | 2018-01-03 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| JP2005311020A (en) | 2004-04-21 | 2005-11-04 | Nikon Corp | Exposure method and device manufacturing method |
| JP4569157B2 (en) | 2004-04-27 | 2010-10-27 | 株式会社ニコン | Reflective projection optical system and exposure apparatus provided with the reflective projection optical system |
| JP4389666B2 (en) | 2004-05-26 | 2009-12-24 | パナソニック電工株式会社 | sink |
| JP2005340605A (en) | 2004-05-28 | 2005-12-08 | Nikon Corp | Exposure apparatus and adjustment method thereof |
| JP5159027B2 (en) | 2004-06-04 | 2013-03-06 | キヤノン株式会社 | Illumination optical system and exposure apparatus |
| US7123348B2 (en) * | 2004-06-08 | 2006-10-17 | Asml Netherlands B.V | Lithographic apparatus and method utilizing dose control |
| JP2006005197A (en) | 2004-06-18 | 2006-01-05 | Canon Inc | Exposure equipment |
| JP4419701B2 (en) | 2004-06-21 | 2010-02-24 | 株式会社ニコン | Quartz glass molding equipment |
| US7116403B2 (en) | 2004-06-28 | 2006-10-03 | Asml Netherlands B.V | Lithographic apparatus and device manufacturing method |
| JP2006017895A (en) | 2004-06-30 | 2006-01-19 | Integrated Solutions:Kk | Aligner |
| JP4444743B2 (en) | 2004-07-07 | 2010-03-31 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2006024819A (en) | 2004-07-09 | 2006-01-26 | Renesas Technology Corp | Immersion exposure apparatus and manufacturing method for electronic device |
| US7283209B2 (en) * | 2004-07-09 | 2007-10-16 | Carl Zeiss Smt Ag | Illumination system for microlithography |
| US7259827B2 (en) | 2004-07-14 | 2007-08-21 | Asml Netherlands B.V. | Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby |
| EP1788694A4 (en) | 2004-07-15 | 2014-07-02 | Nikon Corp | Planar motor equipment, stage equipment, exposure equipment and device manufacturing method |
| JP2006032750A (en) | 2004-07-20 | 2006-02-02 | Canon Inc | Immersion projection exposure apparatus and device manufacturing method |
| JP4411158B2 (en) | 2004-07-29 | 2010-02-10 | キヤノン株式会社 | Exposure equipment |
| JP2006049758A (en) | 2004-08-09 | 2006-02-16 | Nikon Corp | Exposure apparatus control method, and exposure method and apparatus using the same |
| JP2006054328A (en) | 2004-08-12 | 2006-02-23 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and microdevice manufacturing method |
| JP2006054364A (en) | 2004-08-13 | 2006-02-23 | Nikon Corp | Substrate adsorption device, exposure device |
| JP4599936B2 (en) | 2004-08-17 | 2010-12-15 | 株式会社ニコン | Illumination optical apparatus, adjustment method of illumination optical apparatus, exposure apparatus, and exposure method |
| KR20070048164A (en) | 2004-08-18 | 2007-05-08 | 가부시키가이샤 니콘 | Exposure apparatus and device manufacturing method |
| JP2006073584A (en) | 2004-08-31 | 2006-03-16 | Nikon Corp | Exposure apparatus and method, and device manufacturing method |
| KR101187611B1 (en) | 2004-09-01 | 2012-10-08 | 가부시키가이샤 니콘 | Substrate holder, stage apparatus, and exposure apparatus |
| JP4772306B2 (en) | 2004-09-06 | 2011-09-14 | 株式会社東芝 | Immersion optical device and cleaning method |
| JP2006080281A (en) | 2004-09-09 | 2006-03-23 | Nikon Corp | Stage apparatus, gas bearing apparatus, exposure apparatus, and device manufacturing method |
| JPWO2006028188A1 (en) | 2004-09-10 | 2008-05-08 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| JP2006086141A (en) | 2004-09-14 | 2006-03-30 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| WO2006030727A1 (en) | 2004-09-14 | 2006-03-23 | Nikon Corporation | Correction method and exposure device |
| JP2006086442A (en) | 2004-09-17 | 2006-03-30 | Nikon Corp | Stage apparatus and exposure apparatus |
| EP1804279A4 (en) | 2004-09-17 | 2008-04-09 | Nikon Corp | EXPOSURE SUBSTRATE, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
| WO2006035775A1 (en) | 2004-09-27 | 2006-04-06 | Hamamatsu Photonics K.K. | Spatial light modulator, optical processor, coupling prism and method for using coupling prism |
| JP2006100363A (en) | 2004-09-28 | 2006-04-13 | Canon Inc | Exposure apparatus, exposure method, and device manufacturing method. |
| JP4747545B2 (en) | 2004-09-30 | 2011-08-17 | 株式会社ニコン | Stage apparatus, exposure apparatus, and device manufacturing method |
| US7177012B2 (en) * | 2004-10-18 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| GB2419208A (en) * | 2004-10-18 | 2006-04-19 | Qinetiq Ltd | Optical correlation employing an optical bit delay |
| JP2006120985A (en) | 2004-10-25 | 2006-05-11 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2006128192A (en) | 2004-10-26 | 2006-05-18 | Nikon Corp | Holding device, lens barrel, exposure apparatus, and device manufacturing method |
| CN100533662C (en) | 2004-11-01 | 2009-08-26 | 株式会社尼康 | Exposure apparatus and device manufacturing method |
| JP4517354B2 (en) | 2004-11-08 | 2010-08-04 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| TW200636816A (en) | 2004-11-11 | 2006-10-16 | Nikon Corp | Exposure method, device manufacturing method and substrate |
| JP2006140366A (en) | 2004-11-15 | 2006-06-01 | Nikon Corp | Projection optical system and exposure apparatus |
| US7333177B2 (en) * | 2004-11-30 | 2008-02-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005150759A (en) | 2004-12-15 | 2005-06-09 | Nikon Corp | Scanning exposure equipment |
| EP3428724A1 (en) | 2004-12-15 | 2019-01-16 | Nikon Corporation | Exposure apparatus and device fabricating method |
| JP2006170811A (en) | 2004-12-16 | 2006-06-29 | Nikon Corp | Multilayer reflector, EUV exposure apparatus, and soft X-ray optical instrument |
| JP2006170899A (en) | 2004-12-17 | 2006-06-29 | Sendai Nikon:Kk | Photoelectric encoder |
| JP2006177865A (en) | 2004-12-24 | 2006-07-06 | Ntn Corp | Magnetic encoder and bearing for wheel equipped with it |
| WO2006068233A1 (en) | 2004-12-24 | 2006-06-29 | Nikon Corporation | Magnetic guiding apparatus, stage apparatus, exposure apparatus and device manufacturing method |
| US20060138349A1 (en) | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4402582B2 (en) | 2004-12-27 | 2010-01-20 | 大日本印刷株式会社 | Case for large photomask and case changer |
| JP4632793B2 (en) | 2005-01-12 | 2011-02-16 | 京セラ株式会社 | Portable terminal with navigation function |
| JP4984893B2 (en) | 2005-01-21 | 2012-07-25 | 株式会社ニコン | Linear motor, stage apparatus, and exposure apparatus |
| TWI453796B (en) * | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Polarization changing unit and component manufacturing method |
| JP4858439B2 (en) * | 2005-01-25 | 2012-01-18 | 株式会社ニコン | Exposure apparatus, exposure method, and microdevice manufacturing method |
| JP2006208432A (en) * | 2005-01-25 | 2006-08-10 | Fuji Photo Film Co Ltd | Exposure method and apparatus |
| KR100664325B1 (en) * | 2005-02-04 | 2007-01-04 | 삼성전자주식회사 | Optical tunnels and projection devices comprising the same |
| JP2006216917A (en) | 2005-02-07 | 2006-08-17 | Canon Inc | Illumination optical system, exposure apparatus, and device manufacturing method |
| WO2006085524A1 (en) | 2005-02-14 | 2006-08-17 | Nikon Corporation | Exposure equipment |
| JPWO2006085626A1 (en) | 2005-02-14 | 2008-06-26 | 株式会社ニコン | Exposure method and apparatus, and device manufacturing method |
| JP4650619B2 (en) | 2005-03-09 | 2011-03-16 | 株式会社ニコン | Drive unit, optical unit, optical apparatus, and exposure apparatus |
| JP2006253572A (en) | 2005-03-14 | 2006-09-21 | Nikon Corp | Stage apparatus, exposure apparatus, and device manufacturing method |
| KR101134174B1 (en) | 2005-03-15 | 2012-04-09 | 칼 짜이스 에스엠티 게엠베하 | Projection exposure method and projection exposure system therefor |
| WO2006100889A1 (en) | 2005-03-23 | 2006-09-28 | Konica Minolta Holdings, Inc. | Method for forming organic el layer |
| JP4561425B2 (en) * | 2005-03-24 | 2010-10-13 | ソニー株式会社 | Hologram recording / reproducing apparatus and hologram recording / reproducing method |
| JP4858744B2 (en) | 2005-03-24 | 2012-01-18 | 株式会社ニコン | Exposure equipment |
| US7548302B2 (en) * | 2005-03-29 | 2009-06-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317506B2 (en) * | 2005-03-29 | 2008-01-08 | Asml Netherlands B.V. | Variable illumination source |
| JP2006278820A (en) | 2005-03-30 | 2006-10-12 | Nikon Corp | Exposure method and apparatus |
| JP4493538B2 (en) | 2005-03-31 | 2010-06-30 | 富士通株式会社 | Wavelength selective switch |
| JP4546315B2 (en) | 2005-04-07 | 2010-09-15 | 株式会社神戸製鋼所 | Manufacturing method of mold for microfabrication |
| CN101156226B (en) | 2005-04-27 | 2012-03-14 | 株式会社尼康 | Exposure method, exposure apparatus, device manufacturing method, and film evaluation method |
| US7400382B2 (en) * | 2005-04-28 | 2008-07-15 | Asml Holding N.V. | Light patterning device using tilting mirrors in a superpixel form |
| JP4230525B2 (en) | 2005-05-12 | 2009-02-25 | 有限会社テクノドリーム二十一 | Three-dimensional shape measuring method and apparatus |
| JP4771753B2 (en) | 2005-06-08 | 2011-09-14 | 新光電気工業株式会社 | Surface light source control apparatus and surface light source control method |
| JP2006351586A (en) | 2005-06-13 | 2006-12-28 | Nikon Corp | Illumination apparatus, projection exposure apparatus, and microdevice manufacturing method |
| JP4710427B2 (en) | 2005-06-15 | 2011-06-29 | 株式会社ニコン | Optical element holding apparatus, lens barrel, exposure apparatus, and device manufacturing method |
| DE102005030839A1 (en) | 2005-07-01 | 2007-01-11 | Carl Zeiss Smt Ag | Projection exposure system with a plurality of projection lenses |
| WO2007004567A1 (en) | 2005-07-01 | 2007-01-11 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, and system |
| JP4684774B2 (en) | 2005-07-05 | 2011-05-18 | 株式会社ナノシステムソリューションズ | Exposure equipment |
| JP5309565B2 (en) | 2005-08-05 | 2013-10-09 | 株式会社ニコン | Stage apparatus, exposure apparatus, method, exposure method, and device manufacturing method |
| JP2007048819A (en) | 2005-08-08 | 2007-02-22 | Nikon Corp | Surface position detection apparatus, exposure apparatus, and microdevice manufacturing method |
| JP2007043980A (en) | 2005-08-11 | 2007-02-22 | Sanei Gen Ffi Inc | Quality improver for japanese/western baked confectionery |
| JP2007087306A (en) | 2005-09-26 | 2007-04-05 | Yokohama National Univ | Target image designation creation method |
| JP2007093546A (en) | 2005-09-30 | 2007-04-12 | Nikon Corp | Encoder system, stage apparatus and exposure apparatus |
| JP4640090B2 (en) | 2005-10-04 | 2011-03-02 | ウシオ電機株式会社 | Discharge lamp holder and discharge lamp holding mechanism |
| JP2007113939A (en) | 2005-10-18 | 2007-05-10 | Nikon Corp | MEASUREMENT DEVICE AND MEASUREMENT METHOD, STAGE DEVICE, EXPOSURE DEVICE AND EXPOSURE METHOD |
| JP2007120333A (en) | 2005-10-25 | 2007-05-17 | Mitsubishi Heavy Ind Ltd | Injection pipe of combustor for rocket and combustor for rocket |
| JP2007120334A (en) | 2005-10-25 | 2007-05-17 | Denso Corp | Abnormality diagnostic device of vehicle driving system |
| JP4809037B2 (en) | 2005-10-27 | 2011-11-02 | 日本カニゼン株式会社 | Black plating film, method for forming the same, and article having plating film |
| KR20080066836A (en) | 2005-11-09 | 2008-07-16 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
| JP2007150295A (en) | 2005-11-10 | 2007-06-14 | Carl Zeiss Smt Ag | Optical device comprising raster element, and irradiation system comprising the optical device |
| WO2007055373A1 (en) | 2005-11-14 | 2007-05-18 | Nikon Corporation | Liquid recovery member, exposure apparatus, exposure method, and device production method |
| KR20080068006A (en) * | 2005-11-15 | 2008-07-22 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
| JP2007142313A (en) | 2005-11-22 | 2007-06-07 | Nikon Corp | Measuring tool and adjustment method |
| JP2007144864A (en) | 2005-11-29 | 2007-06-14 | Sanyo Electric Co Ltd | Laminated structure and refrigeration unit using the same |
| KR20080071552A (en) | 2005-12-06 | 2008-08-04 | 가부시키가이샤 니콘 | Exposure method, exposure apparatus and device manufacturing method |
| TWI406321B (en) | 2005-12-08 | 2013-08-21 | 尼康股份有限公司 | A substrate holding device, an exposure apparatus, an exposure method, and an element manufacturing method |
| JP4800901B2 (en) | 2005-12-12 | 2011-10-26 | 矢崎総業株式会社 | Voltage detection device and insulation interface |
| JP2007170938A (en) | 2005-12-21 | 2007-07-05 | Sendai Nikon:Kk | Encoder |
| JP2007207821A (en) | 2006-01-31 | 2007-08-16 | Nikon Corp | Variable slit device, illumination device, exposure apparatus, exposure method, and device manufacturing method |
| US7532378B2 (en) * | 2006-02-21 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device |
| JP2007258691A (en) | 2006-02-21 | 2007-10-04 | Semiconductor Energy Lab Co Ltd | Device for laser irradiation, method of laser irradiation, and method of fabricating semiconductor device |
| JP2007227637A (en) | 2006-02-23 | 2007-09-06 | Canon Inc | Immersion exposure equipment |
| US7525642B2 (en) * | 2006-02-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20080104309A (en) | 2006-02-27 | 2008-12-02 | 가부시키가이샤 니콘 | Dichroic filter |
| JP2007234110A (en) * | 2006-02-28 | 2007-09-13 | Toshiba Corp | Optical information recording apparatus and method for controlling optical information recording apparatus |
| WO2007100081A1 (en) | 2006-03-03 | 2007-09-07 | Nikon Corporation | Exposure method and apparatus, and device manufacturing method |
| JP4929762B2 (en) | 2006-03-03 | 2012-05-09 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP2007280623A (en) | 2006-04-03 | 2007-10-25 | Seiko Epson Corp | Heat treatment apparatus, thin film forming apparatus, and heat treatment method |
| JP2007295702A (en) | 2006-04-24 | 2007-11-08 | Toshiba Mach Co Ltd | Linear motor, and stage drive device |
| WO2007132862A1 (en) | 2006-05-16 | 2007-11-22 | Nikon Corporation | Projection optical system, exposure method, exposure apparatus, and method for manufacturing device |
| JP4893112B2 (en) | 2006-06-03 | 2012-03-07 | 株式会社ニコン | High frequency circuit components |
| JP4873138B2 (en) | 2006-06-21 | 2012-02-08 | 富士ゼロックス株式会社 | Information processing apparatus and program |
| CN101490538B (en) * | 2006-08-02 | 2013-03-27 | 株式会社尼康 | Defect detecting apparatus and defect detecting method |
| JP4883482B2 (en) | 2006-08-18 | 2012-02-22 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP2008058580A (en) | 2006-08-31 | 2008-03-13 | Canon Inc | Image forming apparatus, monitoring apparatus, control method, and program |
| JP2008064924A (en) | 2006-09-06 | 2008-03-21 | Seiko Epson Corp | Fixing apparatus and image forming apparatus |
| EP2068349A4 (en) | 2006-09-29 | 2011-03-30 | Nikon Corp | Stage device and exposure device |
| KR100855628B1 (en) | 2006-10-02 | 2008-09-03 | 삼성전기주식회사 | Device and method for inspecting optical modulator |
| US7804603B2 (en) * | 2006-10-03 | 2010-09-28 | Asml Netherlands B.V. | Measurement apparatus and method |
| JP2007051300A (en) | 2006-10-10 | 2007-03-01 | Teijin Chem Ltd | Flame retardant resin composition |
| JP4924879B2 (en) | 2006-11-14 | 2012-04-25 | 株式会社ニコン | Encoder |
| WO2008061681A2 (en) | 2006-11-21 | 2008-05-29 | Carl Zeiss Smt Ag | Illumination lens system for projection microlithography, and measuring and monitoring method for such an illumination lens system |
| WO2008065977A1 (en) | 2006-11-27 | 2008-06-05 | Nikon Corporation | Exposure method, pattern forming method, exposure device, and device manufacturing method |
| JP2007274881A (en) | 2006-12-01 | 2007-10-18 | Nikon Corp | Mobile device, fine moving body, and exposure apparatus |
| JP4910679B2 (en) | 2006-12-21 | 2012-04-04 | 株式会社ニコン | Variable capacitor, variable capacitor device, high frequency circuit filter and high frequency circuit |
| WO2008078668A1 (en) | 2006-12-26 | 2008-07-03 | Miura Co., Ltd. | Method of feeding makeup water for boiler water supply |
| KR20090106555A (en) | 2006-12-27 | 2009-10-09 | 가부시키가이샤 니콘 | Stage apparatus, exposure apparatus and device manufacturing method |
| JPWO2008090975A1 (en) | 2007-01-26 | 2010-05-20 | 株式会社ニコン | Support structure and exposure apparatus |
| US8937706B2 (en) * | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US9250536B2 (en) | 2007-03-30 | 2016-02-02 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP4225357B2 (en) | 2007-04-13 | 2009-02-18 | ダイキン工業株式会社 | Refrigerant filling apparatus, refrigeration apparatus and refrigerant filling method |
| US20080259304A1 (en) * | 2007-04-20 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP5345132B2 (en) | 2007-04-25 | 2013-11-20 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system for illuminating a mask in a microlithographic exposure apparatus |
| WO2008139848A1 (en) | 2007-05-09 | 2008-11-20 | Nikon Corporation | Photomask substrate, photomask substrate forming member, photomask substrate manufacturing method, photomask, and exposure method using photomask |
| JP5184217B2 (en) | 2007-05-31 | 2013-04-17 | パナソニック株式会社 | Image photographing apparatus, additional information providing server, and additional information filtering system |
| US7573564B2 (en) * | 2007-06-26 | 2009-08-11 | The United States Of America As Represented By The Secretary Of The Army | Systems for doppler tracking using photonic mixing detectors |
| WO2009026947A1 (en) | 2007-08-30 | 2009-03-05 | Carl Zeiss Smt Ag | Illumination system for illuminating a mask in a microlithographic projection exposure apparatus |
| JP5194650B2 (en) | 2007-08-31 | 2013-05-08 | 株式会社ニコン | Electronic camera |
| DE102007043958B4 (en) | 2007-09-14 | 2011-08-25 | Carl Zeiss SMT GmbH, 73447 | Illumination device of a microlithographic projection exposure apparatus |
| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| US20090091730A1 (en) * | 2007-10-03 | 2009-04-09 | Nikon Corporation | Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method |
| JP5267029B2 (en) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| EP2179330A1 (en) | 2007-10-16 | 2010-04-28 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
| EP2179329A1 (en) | 2007-10-16 | 2010-04-28 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP4499774B2 (en) | 2007-10-24 | 2010-07-07 | 株式会社半導体エネルギー研究所 | Insulated gate type semiconductor device |
| JP5013292B2 (en) | 2008-01-24 | 2012-08-29 | 平和産業株式会社 | Turbine blade fixing device |
| JPWO2009153925A1 (en) | 2008-06-17 | 2011-11-24 | 株式会社ニコン | Nanoimprint method and apparatus |
| KR101504388B1 (en) | 2008-06-26 | 2015-03-19 | 가부시키가이샤 니콘 | Method and apparatus for manufacturing display element |
| WO2010001537A1 (en) | 2008-06-30 | 2010-01-07 | 株式会社ニコン | Method and apparatus for manufacturing display element, method and apparatus for manufacturing thin film transistor, and circuit forming apparatus |
-
2008
- 2008-10-22 US US12/256,055 patent/US9116346B2/en active Active
- 2008-10-23 KR KR1020157005338A patent/KR101644762B1/en active Active
- 2008-10-23 EP EP08847031A patent/EP2208104A1/en not_active Withdrawn
- 2008-10-23 JP JP2010506474A patent/JP5447369B2/en active Active
- 2008-10-23 KR KR1020167020176A patent/KR101895825B1/en active Active
- 2008-10-23 KR KR1020187025225A patent/KR20180100456A/en not_active Ceased
- 2008-10-23 KR KR1020107012430A patent/KR101581479B1/en active Active
- 2008-10-23 WO PCT/JP2008/069701 patent/WO2009060773A1/en not_active Ceased
- 2008-11-05 TW TW097142739A patent/TWI475328B/en active
-
2015
- 2015-03-20 US US14/664,576 patent/US9678332B2/en active Active
-
2017
- 2017-05-18 US US15/599,017 patent/US20170255005A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090012888A1 (en) * | 2002-10-22 | 2009-01-08 | Koninklijke Kpn N.V. | Text-to-speech streaming via a network |
| US20070016520A1 (en) * | 2002-12-30 | 2007-01-18 | Gang John E | System and method for facilitating sale of a loan to a secondary market purchaser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12066176B2 (en) | 2020-03-09 | 2024-08-20 | Lg Innotek Co., Ltd. | Lighting module and lighting device comprising same |
| US12326251B2 (en) | 2020-03-09 | 2025-06-10 | Lg Innotek Co., Ltd. | Lighting module and lighting device comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150212424A1 (en) | 2015-07-30 |
| KR101644762B1 (en) | 2016-08-01 |
| KR101581479B1 (en) | 2015-12-30 |
| JP5447369B2 (en) | 2014-03-19 |
| TW200928611A (en) | 2009-07-01 |
| US20090116093A1 (en) | 2009-05-07 |
| EP2208104A1 (en) | 2010-07-21 |
| KR101895825B1 (en) | 2018-09-07 |
| KR20100095566A (en) | 2010-08-31 |
| KR20180100456A (en) | 2018-09-10 |
| WO2009060773A1 (en) | 2009-05-14 |
| US9678332B2 (en) | 2017-06-13 |
| KR20150032755A (en) | 2015-03-27 |
| US9116346B2 (en) | 2015-08-25 |
| KR20160090916A (en) | 2016-08-01 |
| TWI475328B (en) | 2015-03-01 |
| JP2011503835A (en) | 2011-01-27 |
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