US20100025714A1 - Light-emitting device containing a composite electroplated substrate - Google Patents
Light-emitting device containing a composite electroplated substrate Download PDFInfo
- Publication number
- US20100025714A1 US20100025714A1 US12/533,211 US53321109A US2010025714A1 US 20100025714 A1 US20100025714 A1 US 20100025714A1 US 53321109 A US53321109 A US 53321109A US 2010025714 A1 US2010025714 A1 US 2010025714A1
- Authority
- US
- United States
- Prior art keywords
- layer
- light
- emitting diode
- diode according
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 239000002131 composite material Substances 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 238000009713 electroplating Methods 0.000 claims abstract description 30
- 238000000407 epitaxy Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001453 nickel ion Inorganic materials 0.000 claims description 4
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims description 4
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 claims description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- 229910001096 P alloy Inorganic materials 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 239000002356 single layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
Definitions
- the present application generally relates to a light-emitting device, and more particularly to a light-emitting diode comprising a composite electroplated substrate.
- the vertical type light-emitting diodes become a popular choice to light-emitting diodes package for its simple design, high power, high efficiency, and long life-time.
- the light-emitting diodes are usually attached to the metal substrate by bonding technology, or by electroplating technology to evaporate metal film on the epitaxy layers.
- the light-emitting diode wafer often cracks during the manufacturing which influences the wafer life-time indirectly.
- a metal matrix composite material is produced by fusing materials having low thermal expansion coefficient with metals having high thermal conductivity in a high temperature process to achieve high thermal conductivity and low thermal expansion coefficient.
- the high temperature process does not suit for light-emitting diode chip manufacturing.
- the composite electroplating has developed vigorously.
- the various kinds of composite material compositions have been developed and used in the surface coating for the purpose of wear-resisting and waterproof.
- the nickel-silicon carbide composite electroplating as an example, the principle is to precipitate and co-coat nickel and silicon carbide on the substrate by the electroplating solution containing the nickel ions with the inert silicon carbide particles suspended therein.
- a light-emitting diode includes a light-emitting epitaxy structure, a reflective layer on the light-emitting epitaxy structure, a seed layer on the reflective layer, a composite electroplating substrate on the seed layer, and a protection layer on the composite electroplating substrate.
- a light-emitting diode further includes an interfacial layer between the seed layer and the composite electroplating substrate.
- a light-emitting diode further includes an intermediate layer between the reflective layer and the seed layer.
- a light-emitting diode further includes a multiple-film layer stacked alternately by multiple high strength films and multiple high toughness films between the reflective layer and the seed layer.
- a light-emitting diode comprises an interfacial layer wherein the material of the interfacial layer can be copper, gold, or nickel.
- a light-emitting diode comprises a reflective layer wherein the material of the reflective layer can be as a stack of titanium/aluminum, titanium/gold, or titanium/silver.
- a light-emitting diode comprises a seed layer wherein the material of the seed layer can be as a stack of titanium/gold, titanium/copper, chromium/gold, or chromium/platinum/gold.
- a light-emitting diode comprises a composite electroplating substrate is formed by the composite electroplating method wherein the material of the composite electroplating substrate can be copper-diamond, copper-silicon carbide, nickel-silicon carbide, carbon nanotube-nickel, carbon nanotube-copper, or carbon nanofiber-copper.
- a light-emitting diode comprises a protection layer wherein the material of the protection layer can be gold or nickel.
- a light-emitting diode comprises an intermediate layer wherein the material of the intermediate layer can be nickel, nickel cobalt, copper tungsten, copper molybdenum, nickel phosphorus alloy, or nickel ion alloy.
- a light-emitting diode comprises a multiple-film layer stacked alternately by multiple high strength films and multiple high toughness films, wherein the material of the multiple-film layer can be as a stack of aluminum nitride/aluminum, aluminum nitride/copper, or titanium tungsten/aluminum.
- FIGS. 1A-1F illustrate a process flow of forming a light-emitting diode in accordance with one embodiment of the present application
- FIGS. 2A-2B illustrate a process flow of forming a light-emitting diode in accordance with another embodiment of the present application
- FIGS. 3A-3B illustrate a process flow of forming a light-emitting diode in accordance with further another embodiment of the present application.
- FIG. 1A to FIG. 1F The first embodiment of the present application is illustrated in FIG. 1A to FIG. 1F .
- a growth substrate 101 is provided.
- a semiconductor epitaxy structure 105 is formed on the growth substrate, included at least a first conductivity type semiconductor layer 102 , an active layer 103 , and a second conductivity type semiconductor layer 104 .
- the first conductivity type semiconductor layer 102 is an n-GaN layer
- the active layer 103 is an InGaN/GaN multiple quantum wells structure
- the second conductivity type semiconductor layer 104 is a p-GaN layer.
- the semiconductor epitaxy structure 105 is formed on sapphire by the epitaxy technology.
- the reflective layer 106 is formed on the semiconductor epitaxy structure 105 as a stack of titanium (thickness is 30 nm)/aluminum (thickness is 200 nm). It can also be as a stack of titanium/gold or titanium/silver.
- a seed layer 107 is formed on the reflective layer 106 to form a stack of titanium (thickness is 30 nm)/gold (thickness is 200 nm). It can also be as a stack of titanium/copper, chromium/gold, or chromium/platinum/gold.
- an intermediate layer 108 is formed on the seed layer 107 , and can be composed of copper with a thickness of 3-5 ⁇ m in this embodiment.
- the intermediate layer can be a single layer or multiple layers structure. It also can be composed of gold or nickel.
- the above-mentioned structure is disposed in the copper ion electroplating solution with diamond powder suspended therein to perform a composite electroplating process.
- a composite electroplating substrate 109 is then formed by the copper and the diamond precipitating on the intermediate layer, as shown in FIG. 1D .
- the composite electroplating substrate can be a single layer or multiple layers structure.
- the material of the composite electroplating substrate can also be copper-silicon carbide, nickel-silicon carbide, carbon nanotube-nickel, carbon nanotube-copper, or carbon nano fiber-copper.
- the protection layer 110 is formed on the composite electroplating substrate because the diamond particles can influence the coating layer surface coarseness and oxidize copper greatly.
- the protection layer can be a single layer or multiple layers structure.
- the material of the protection layer can be gold or nickel, as shown in FIG. 1E .
- the growth substrate 101 is removed, and the light-emitting diode structure with composite electroplated substrate is formed as shown in FIG. 1F .
- the intermediate layer 111 is a patterned structure and composed of the material(s) with low thermal expansion coefficient, they can be nickel, nickel cobalt alloy, nickel phosphorous alloy, nickel ion alloy, copper tungsten alloy, or copper molybdenum alloy.
- the intermediate layer can be a single layer or multiple layers structure. The following steps are the same as FIG. 1B to FIG. 1F to form the light-emitting diode structure 200 as shown in FIG.
- the purpose of forming the high strength and high toughness multiple-film layer 112 on the reflective layer 106 is to release the stress and to protect the semiconductor epitaxy structure when the difference of the thermal expansion coefficient between the semiconductor epitaxy structure 105 and the composite electroplating substrate 109 is large.
- the high strength and high toughness multiple-film layer is stacked alternately by the multiple hard films and the multiple soft films, and the material of the multiple-film layer be as a stack of aluminum nitride/aluminum, aluminum nitride/copper, or titanium tungsten/aluminum.
- the number of stacked layers and the thickness of each layer can be adjusted for product performance concerns.
- the following steps are the same as FIG. 1B to FIG. 1F to form the light-emitting diode structure 300 as shown in FIG. 3B .
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- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/181,222 US8110845B2 (en) | 2008-08-01 | 2011-07-12 | Light-emitting device containing a composite electroplated substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW097129481A TWI381551B (zh) | 2008-08-01 | 2008-08-01 | 一種包含複合電鍍基板之發光元件 |
| TW097129481 | 2008-08-01 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/181,222 Division US8110845B2 (en) | 2008-08-01 | 2011-07-12 | Light-emitting device containing a composite electroplated substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20100025714A1 true US20100025714A1 (en) | 2010-02-04 |
Family
ID=41607417
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/533,211 Abandoned US20100025714A1 (en) | 2008-08-01 | 2009-07-31 | Light-emitting device containing a composite electroplated substrate |
| US13/181,222 Active US8110845B2 (en) | 2008-08-01 | 2011-07-12 | Light-emitting device containing a composite electroplated substrate |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/181,222 Active US8110845B2 (en) | 2008-08-01 | 2011-07-12 | Light-emitting device containing a composite electroplated substrate |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20100025714A1 (zh) |
| TW (1) | TWI381551B (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683568A (zh) * | 2011-03-17 | 2012-09-19 | 英志企业股份有限公司 | 具散热特性的导热复合基板及其制造方法 |
| US20150108494A1 (en) * | 2013-10-22 | 2015-04-23 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| US9496454B2 (en) | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
| US10041187B2 (en) | 2013-01-16 | 2018-08-07 | QMAT, Inc. | Techniques for forming optoelectronic devices |
| US10141478B2 (en) | 2010-07-23 | 2018-11-27 | Lg Innotek Co., Ltd. | Structure of a reflective electrode and an OHMIC layer of a light emitting device |
| US10356150B1 (en) | 2014-12-15 | 2019-07-16 | Amazon Technologies, Inc. | Automated repartitioning of streaming data |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742455B (zh) * | 2016-03-24 | 2018-05-22 | 华灿光电股份有限公司 | 一种发光二极管芯片及其制作方法 |
| CN106611809B (zh) * | 2017-01-11 | 2018-09-25 | 东莞市中镓半导体科技有限公司 | 一种用于GaN生长的具有隔离保护层的复合衬底制备方法 |
Citations (5)
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|---|---|---|---|---|
| US20040026703A1 (en) * | 2002-08-07 | 2004-02-12 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
| US20050194587A1 (en) * | 2004-02-20 | 2005-09-08 | Min-Hsun Hsieh | Organic adhesive light-emitting device with ohmic metal bulge |
| US20060286697A1 (en) * | 2005-06-16 | 2006-12-21 | Leem See J | Method for manufacturing light emitting diodes |
| US20090014738A1 (en) * | 2007-07-10 | 2009-01-15 | Delta Electronics, Inc. | Light emitting diode devices and manufacturing method thereof |
| US20090294908A1 (en) * | 2004-01-14 | 2009-12-03 | Peidong Yang | Diluted magnetic semiconductor nanowires exhibiting magnetoresistance |
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| GB9807692D0 (en) * | 1998-04-14 | 1998-06-10 | Univ Strathclyde | Optival devices |
| US6492661B1 (en) * | 1999-11-04 | 2002-12-10 | Fen-Ren Chien | Light emitting semiconductor device having reflection layer structure |
| US6840157B2 (en) * | 2002-08-08 | 2005-01-11 | Dong Ming Wang | Coffee apparatus with vacuum-fresh coffee beans |
| JP4791119B2 (ja) | 2005-09-16 | 2011-10-12 | 昭和電工株式会社 | 窒化物系半導体発光素子の製造方法 |
-
2008
- 2008-08-01 TW TW097129481A patent/TWI381551B/zh active
-
2009
- 2009-07-31 US US12/533,211 patent/US20100025714A1/en not_active Abandoned
-
2011
- 2011-07-12 US US13/181,222 patent/US8110845B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040026703A1 (en) * | 2002-08-07 | 2004-02-12 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
| US20090294908A1 (en) * | 2004-01-14 | 2009-12-03 | Peidong Yang | Diluted magnetic semiconductor nanowires exhibiting magnetoresistance |
| US20050194587A1 (en) * | 2004-02-20 | 2005-09-08 | Min-Hsun Hsieh | Organic adhesive light-emitting device with ohmic metal bulge |
| US20060286697A1 (en) * | 2005-06-16 | 2006-12-21 | Leem See J | Method for manufacturing light emitting diodes |
| US20090014738A1 (en) * | 2007-07-10 | 2009-01-15 | Delta Electronics, Inc. | Light emitting diode devices and manufacturing method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10141478B2 (en) | 2010-07-23 | 2018-11-27 | Lg Innotek Co., Ltd. | Structure of a reflective electrode and an OHMIC layer of a light emitting device |
| CN102683568A (zh) * | 2011-03-17 | 2012-09-19 | 英志企业股份有限公司 | 具散热特性的导热复合基板及其制造方法 |
| US9496454B2 (en) | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
| US10483481B2 (en) | 2011-03-22 | 2019-11-19 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
| US10041187B2 (en) | 2013-01-16 | 2018-08-07 | QMAT, Inc. | Techniques for forming optoelectronic devices |
| US20150108494A1 (en) * | 2013-10-22 | 2015-04-23 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| US9847450B2 (en) * | 2013-10-22 | 2017-12-19 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| US10453995B2 (en) * | 2013-10-22 | 2019-10-22 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| US20200006595A1 (en) * | 2013-10-22 | 2020-01-02 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| US11005007B2 (en) * | 2013-10-22 | 2021-05-11 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| US10356150B1 (en) | 2014-12-15 | 2019-07-16 | Amazon Technologies, Inc. | Automated repartitioning of streaming data |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110266581A1 (en) | 2011-11-03 |
| TWI381551B (zh) | 2013-01-01 |
| US8110845B2 (en) | 2012-02-07 |
| TW201007973A (en) | 2010-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: EPISTAR CORPORATION,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HSU, CHIA-LIANG;HSIEH, MIN-HSUN;LU, CHIH-CHIANG;AND OTHERS;REEL/FRAME:023036/0346 Effective date: 20090708 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |