[go: up one dir, main page]

US20080069724A1 - Method for producing a target - Google Patents

Method for producing a target Download PDF

Info

Publication number
US20080069724A1
US20080069724A1 US11/896,124 US89612407A US2008069724A1 US 20080069724 A1 US20080069724 A1 US 20080069724A1 US 89612407 A US89612407 A US 89612407A US 2008069724 A1 US2008069724 A1 US 2008069724A1
Authority
US
United States
Prior art keywords
atmosphere
additive
target
alloy
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/896,124
Other languages
English (en)
Inventor
Atsushi Ota
Isao Sugiura
Noriaki Tani
Masahiro Matsumoto
Hiroaki Katagiri
Tadashi Masuda
Satorui Ishibashi
Takaharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Ulvac Techno Ltd
Original Assignee
Ulvac Inc
Ulvac Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Ulvac Materials Inc filed Critical Ulvac Inc
Assigned to ULVAC, INC., ULVAC MATERIALS, INC. reassignment ULVAC, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUGIURA, ISAO, ISHIBASHI, SATORU, ITO, TAKAHARU, MASUDA, TADASHI, MATSUMOTO, MASAHIRO, KATAGIRI, HIROAKI, OTA, ATSUSHI, TANI, NORIAKI
Publication of US20080069724A1 publication Critical patent/US20080069724A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C22C1/026—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention generally relates to a technical field on the sputtering targets; and more particularly, the invention relates to the technology for producing the targets in which an additive is added into a principal material such as aluminum or the like.
  • thin films for wiring or reflective films are formed by using an Al or Al alloy target.
  • annealing can be performed at a high temperature while the production of hillocks is suppressed, and the specific resistance can be reduced by the annealing.
  • targets become greater so that power applied to a cathode increases and arc discharge is likely to occur.
  • the arc discharge occurs, there is a problem in that the target is partially melted and a splash is formed to mix into the thin film.
  • a target in which an additive composed of a rare earth element is added into a principal material made of Al is described in, for example, JPA 2001-073124.
  • the additive such as, a rare earth element
  • the additive is likely to react with oxygen in the atmosphere and ignites under heating because the additive capable of suppressing the occurrence of the hillocks is active. For this reason, there is a problem in that the conventional equipment for producing the target through melting becomes large-scaled.
  • the present invention solves the problems and drawbacks in the production of the targets in the conventional art by incorporating the additive into the principal material by melting, and provides a method for producing a target-constituting material without using a large-scale vacuum chamber.
  • the present invention is directed to a method for producing a target, wherein this method includes preparing a primary alloy in a molten state by adding an additive into a principal material in a first atmosphere, adding the principal material to the primary alloy in a secondary atmosphere to obtain a secondary alloy in a molten state, having a content ratio of the additive lower than that of the primary alloy, and producing a sputtering target composed of the secondary alloy, and wherein a partial pressure of oxygen in the first atmosphere is lower than a partial pressure of oxygen in the secondary atmosphere.
  • the present invention is the target producing method in which the secondary atmosphere is an atmospheric atmosphere.
  • the present invention is the target producing method in which the pressure of the first atmosphere is lower than that of the atmospheric atmosphere.
  • the present invention is the target producing method in which aluminum (Al) is used as the principal material.
  • the present invention is the target producing method in which an inflammable metal that ignites if it is melted in the atmosphere is used as the additive.
  • the present invention is the target producing method in which at least one material selected from the group consisting of Ce, Pr, Dy and Y is used as the additive and the additive is incorporated into the sputtering target in the range of 0.5 atm % or more to 5 atm % or less.
  • the present invention is the target producing method in which a partial pressure of oxygen in the first atmosphere is 0.2 Pa or less.
  • the present invention is the target producing method in which the first atmosphere is set at a pressure of 130 Pa or more.
  • the present invention is the target producing method to form the first atmosphere in a vacuum chamber and to add the additive into the principal material inside the vacuum chamber; and the target producing method further includes reducing the interior of the vacuum chamber to set to a pressure of 1 Pa or less; and an inert gas is introduced into the vacuum chamber to set the pressure of 130 Pa or more so as to form the first atmosphere.
  • the present invention is constructed as mentioned above, and the additive which ignites by heating in the atmosphere, is melted in the first atmosphere with low-level oxygen; and the molten principal material is mixed with the principal material in the molten state; thereby, forming the primary alloy. It may be that the molten additive is added into the molten principal material; as such, the solid additive may be alternatively added to the molten principal material to melt the additive, or to the contrary, the solid principal material is added little by little into the molten additive to melt the principal material.
  • the molten primary alloy may be converted to a solid by cooling in the first atmosphere, or may be cooled after being taken out to the atmosphere, since the primary alloy is stable in the atmosphere even if it contains the additive at a high concentration.
  • the secondary alloy can be formed by increasing the volume of the primary alloy by adding the principal material to the molten primary alloy in the atmosphere Therefore, since a large amount of the secondary alloy can be obtained from a small amount of the primary alloy in the atmosphere, the vacuum chamber in which the first atmosphere is formed for the primary alloy can be made smaller than in a case where the additive and the principal material are all melted in a vacuum chamber.
  • the secondary alloy obtained is a target material.
  • a sputtering target is obtained.
  • the sputtering target may be attached to a backing plate of copper.
  • the partial pressure of oxygen When the additive is melted into the principal material, the partial pressure of oxygen may be theoretically so high that the additive or the principal material may not be oxidized.
  • the present inventors experimentally confirmed that no ignition occurs if the partial pressure of oxygen in the first atmosphere is set at 0.2 Pa or less when the additive is Ce. It is anticipated that the same condition can be applied to other materials (Pr, Dy or Y).
  • the pressure of the first atmosphere may be the atmospheric pressure.
  • the interior of the vacuum chamber is evacuated to vacuum so as to remove a gas generated from the melted principal material or the melted additive. For this purpose, it is easy to set the first atmosphere at the pressure lower than the atmospheric pressure.
  • the first atmosphere is set at a too low a pressure, a vapor of the principal material or the additive is generated from the molten principal material or the melted additive, it makes the composition of the primary alloy unstable.
  • the first atmosphere is set at less than the atmospheric pressure and higher than a lower limit pressure.
  • the first atmosphere is preferably at the pressure of not less than 130 Pa, and that the pressure of the first atmosphere is set preferably at not less than 2600 Pa so as to suppress the generation of vapors of aluminum as the principal material and Ce as the additive and to keep the compositional ratio of the first metal constant.
  • the first atmosphere consisting of the inert gas atmosphere at 130 Pa or more, or not less than 2600 Pa by introducing the inert gas into the vacuum chamber in order to raise its pressure.
  • the inflammable additive is added at the low level-oxygen atmosphere (such as, the vacuum atmosphere or the inert gas atmosphere) having the pressure lower than the atmospheric pressure, there is no fear of ignition.
  • the low level-oxygen atmosphere such as, the vacuum atmosphere or the inert gas atmosphere
  • the volume of the primary alloy is increased by adding the principal material in the atmospheric pressure. Consequently, a great amount of the target material can be obtained without using a large-scale vacuum chamber.
  • the sputtering targets which are suitable for the formation of reflective films as well as of thin films to constitute electrode-wiring materials for electronic devices and apparatuses (such as, liquid crystal displays, etc.) can be obtained.
  • FIG. 1 is a view for illustrating a step for producing a primary alloy.
  • FIG. 2 is a view for illustrating a step for producing a secondary alloy.
  • a reference numeral 10 denotes a first melting apparatus, which has a vacuum chamber 11 .
  • a first melting crucible 12 is arranged inside the vacuum chamber 11 . Meanwhile, an inert gas introducing system 15 and a vacuum evacuating system 17 are connected to the vacuum chamber 11 .
  • a principal material herein, aluminum: Al
  • an additive herein, cerium: Ce
  • an inert gas (herein, argon gas) is introduced into the interior of the vacuum chamber 11 through the inert gas introducing system 15 ; and the interior of the vacuum chamber 11 is pressurized up to 2600 Pa; thereby, forming a first atmosphere which has a lower pressure and a lower oxygen pressure than the open atmosphere.
  • the principal material and the additive inside the first melting crucible 12 are melted under heating by applying current to a high-frequency induction heating coil 14 ; thereby, obtaining a primary alloy 13 in a molten state.
  • the molten primary alloy 13 is poured, in an inclined manner, into a mold 16 arranged inside the vacuum chamber 11 ; thereby, obtaining the primary alloy (a primary alloy ingot) 18 in a solid condition.
  • the molten primary alloy is poured, in an inclined manner, into the mold 16 in the first atmosphere.
  • a metal such as, Ce or the like
  • Ce which is very active in the atmosphere, easily ignites under heating in the atmosphere.
  • a metallic mass of Ce ignites at 160° C. in the atmosphere.
  • Ce is stabilized through being alloyed with Al, and the primary alloy 18 does not ignite even if taken out to the atmosphere in a molten or solid condition. Further, even if the primary alloy 18 is melted by heating in the atmosphere, it does not ignite.
  • a reference numeral 20 denotes a secondary melting apparatus having a secondary melting crucible 21 .
  • This secondary melting crucible 21 is placed in a secondary atmosphere composed of the atmospheric components at the atmospheric pressure.
  • the primary alloy 18 in the solid condition is placed in the secondary melting crucible 21 ; a principal material is further added at a given ratio; and the primary alloy 18 and the principal material are melted in the secondary atmosphere by generating heat to applying current to the heater 29 ; thereby, obtaining a secondary alloy 22 in a molten state. Since the principal material is further added into the primary alloy 18 , the ratio of the additive to the principal material in the secondary alloy 22 is lower than the ratio of the additive to the principal material in the primary alloy 13 , 18 . The amount of the principal material added is set such that the additive may be contained at a desired ratio in the secondary alloy 22 .
  • the secondary alloy 22 in the molten state is poured, in an inclined manner, into a water-cooled mold 24 , and a secondary alloy (a secondary alloy ingot) is obtained in a solid condition by a continuously casting apparatus 26 .
  • the microstructure of the solid secondary alloy is uniformized by plastic working, and a sputtering target having a given size is obtained by mechanical working such as cutting.
  • a thin-film sample is formed by sputtering a target obtained from the secondary alloy composed of Al as the principal material and Ce as the additive.
  • the resistance value is reduced by annealing the resulting thin film.
  • the principal material is not limited to Al, but widely encompasses Cu, other metals and meltable materials.
  • the invention method is suitable for the case where the additive, which ignites at a low temperature in the atmosphere and thus cannot be melted in the atmosphere, is added.
  • the additive is not limited to Ce, and rare earth elements (such as, Y, Pr, Dy or the like) are suitable for the target as the additive to prevent the hillocks.
  • inert gases such as, nitrogen gas
  • rare gases such as, argon
  • the first atmosphere is not limited to the pressure-reduced atmosphere. Any low level-oxygen atmosphere may suffice as long as the additive does not ignite therein.
  • the inert gas may not necessarily be introduced.
  • targets are produced by using Al as the principal material and any one kind of the rare earth elements of Ce, Y, Pr and Dy as an additive; and thereafter, thin films are formed.
  • the resistance values of the thin films were not more than 5 ⁇ cm, which were sufficiently low and equivalent to 3 ⁇ cm in the case of a thin film formed by an aluminum target.
  • the alloy in which 5 atm % of Ce was added to Al had abnormal discharging smaller than in the case of an alloy in which the same amount of Nd was added.
  • the alloys in which 5 atm % of any one kind of the materials of Ce, Y, Pr and Dy is added less, suffered from the occurrence of foreign matters as compared with those in which more than 5 atm % thereof was added.
  • the reflectance does not decrease even when the films were annealed at 350° C. so that diffuse reflection owing to the occurrence of foreign matters (such as, hillocks) are suppressed.
  • any one or more kinds of the materials of Ce, Y, Pr and Dy in the range of 1 atm % or more to 5 atm % or less when the Al alloy is produced, for the purpose of decreasing the resistance and suppressing the occurrence of the foreign matters on annealing.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
US11/896,124 2005-03-10 2007-08-29 Method for producing a target Abandoned US20080069724A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005066721 2005-03-10
JP2005-066721 2005-03-10
PCT/JP2006/304048 WO2006095642A1 (ja) 2005-03-10 2006-03-03 ターゲット製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/304048 Continuation WO2006095642A1 (ja) 2005-03-10 2006-03-03 ターゲット製造方法

Publications (1)

Publication Number Publication Date
US20080069724A1 true US20080069724A1 (en) 2008-03-20

Family

ID=36953242

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/896,124 Abandoned US20080069724A1 (en) 2005-03-10 2007-08-29 Method for producing a target

Country Status (8)

Country Link
US (1) US20080069724A1 (zh)
EP (1) EP1860207B1 (zh)
JP (1) JP4676487B2 (zh)
KR (1) KR20070113209A (zh)
CN (1) CN101133181B (zh)
NO (1) NO20074376L (zh)
TW (1) TWI361841B (zh)
WO (1) WO2006095642A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021023967A (ja) * 2019-08-05 2021-02-22 株式会社神戸製鋼所 Ｔｉ−Ａｌ基合金の鋳造方法
CN111593216A (zh) * 2020-06-03 2020-08-28 福建阿石创新材料股份有限公司 一种铝钪合金靶材的及其制备方法和应用及真空自耗电弧炉
CN113106407B (zh) * 2021-03-26 2022-07-26 福建省长汀金龙稀土有限公司 一种稀土金属及稀土合金旋转靶材的制造装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080200A (en) * 1977-02-23 1978-03-21 A. Johnson & Co. Inc. Process for alloying metals
US6312833B1 (en) * 1997-03-24 2001-11-06 International Business Machines Corporation Multilayered wiring layer
US20040191111A1 (en) * 2003-03-14 2004-09-30 Beijing University Of Technology Er strengthening aluminum alloy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10317082A (ja) 1997-05-20 1998-12-02 Sumitomo Metal Mining Co Ltd ターゲット材用Ａｌ系合金とその製造方法
JP4197579B2 (ja) * 1997-12-24 2008-12-17 株式会社東芝 スパッタリングターゲットとそれを用いたＡｌ配線膜の製造方法および電子部品の製造方法
JP2001073124A (ja) * 1999-09-06 2001-03-21 Honeywell Electronics Japan Kk スパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080200A (en) * 1977-02-23 1978-03-21 A. Johnson & Co. Inc. Process for alloying metals
US6312833B1 (en) * 1997-03-24 2001-11-06 International Business Machines Corporation Multilayered wiring layer
US20040191111A1 (en) * 2003-03-14 2004-09-30 Beijing University Of Technology Er strengthening aluminum alloy

Also Published As

Publication number Publication date
CN101133181A (zh) 2008-02-27
JPWO2006095642A1 (ja) 2008-08-14
TWI361841B (en) 2012-04-11
CN101133181B (zh) 2012-01-25
EP1860207A1 (en) 2007-11-28
WO2006095642A1 (ja) 2006-09-14
EP1860207B1 (en) 2011-07-27
KR20070113209A (ko) 2007-11-28
TW200702470A (en) 2007-01-16
JP4676487B2 (ja) 2011-04-27
EP1860207A4 (en) 2009-09-16
NO20074376L (no) 2007-10-22

Similar Documents

Publication Publication Date Title
CN100523279C (zh) AI-Ni-稀土类元素合金溅射靶
JP4432015B2 (ja) 薄膜配線形成用スパッタリングターゲット
US20150041313A1 (en) Silver-based cylindrical target and process for manufacturing same
KR20160067198A (ko) 플랫 패널 디스플레이용 배선막 형성용 스퍼터링 타깃
JP6284004B2 (ja) Ｍｏ合金スパッタリングターゲット材の製造方法およびＭｏ合金スパッタリングターゲット材
JP2013216976A (ja) 平型のまたは筒型のスパッタリングターゲットならびにその製造方法
JP2004100000A (ja) 珪化鉄スパッタリングターゲット及びその製造方法
KR20210029744A (ko) 구리 합금 스퍼터링 타겟 및 구리 합금 스퍼터링 타겟의 제조 방법
JP2005029862A (ja) 薄膜形成用スパッタリングターゲット
CN105683407A (zh) 溅镀靶及其制造方法
US20080069724A1 (en) Method for producing a target
JP3634208B2 (ja) 液晶ディスプレイ用の電極・配線材及びスパッタリングターゲット
EP2002027B1 (en) Ternary aluminum alloy films and targets
JPH1060636A (ja) Ａｌ系スパッタリング用ターゲットおよびその製造方法
JP6380837B2 (ja) 被覆層形成用スパッタリングターゲット材およびその製造方法
JPH10147860A (ja) Ａｌ系スパッタリング用タ−ゲット材およびその製造方法
KR101193964B1 (ko) 고순도 루테늄 합금 타겟트 및 그 제조방법과 스퍼터막
CN112135922A (zh) 靶材与背板的接合体以及靶材与背板的接合体的制造方法
JP3509011B2 (ja) Ａｌ系スパッタリング用ターゲット材のための作製原料の微細化方法
US6827759B2 (en) Method for reducing the oxygen and oxide content in cobalt to produce cobalt sputtering targets
JP4062599B2 (ja) 表示装置用Ａｇ合金膜、平面表示装置およびＡｇ合金膜形成用スパッタリングターゲット材
KR20030019645A (ko) 코발트 스퍼터링 타깃을 생성하기 위해 코발트 중의 산소및 산화물 함량을 감소시키는 방법
KR20250053965A (ko) Ni 합금막 및 Ni 합금막 형성용 스퍼터링 타겟재
JP5077695B2 (ja) フラットパネルディスプレイ用配線膜を形成するためのスパッタリングターゲット
JP2022124997A (ja) スパッタリングターゲット、および、Ａｇ膜

Legal Events

Date Code Title Description
AS Assignment

Owner name: ULVAC MATERIALS, INC., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OTA, ATSUSHI;SUGIURA, ISAO;TANI, NORIAKI;AND OTHERS;REEL/FRAME:020126/0741;SIGNING DATES FROM 20070914 TO 20070926

Owner name: ULVAC, INC., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OTA, ATSUSHI;SUGIURA, ISAO;TANI, NORIAKI;AND OTHERS;REEL/FRAME:020126/0741;SIGNING DATES FROM 20070914 TO 20070926

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION