[go: up one dir, main page]

UA94098C2 - Технологическая печь и подобное оборудование - Google Patents

Технологическая печь и подобное оборудование

Info

Publication number
UA94098C2
UA94098C2 UAA200812518A UAA200812518A UA94098C2 UA 94098 C2 UA94098 C2 UA 94098C2 UA A200812518 A UAA200812518 A UA A200812518A UA A200812518 A UAA200812518 A UA A200812518A UA 94098 C2 UA94098 C2 UA 94098C2
Authority
UA
Ukraine
Prior art keywords
furnace
reactive gas
heating system
heating
present
Prior art date
Application number
UAA200812518A
Other languages
English (en)
Ukrainian (uk)
Inventor
Лоран Лонвен
Филип Жуаннар
Original Assignee
Мессье-Бугатти
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Мессье-Бугатти filed Critical Мессье-Бугатти
Publication of UA94098C2 publication Critical patent/UA94098C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Печь для химической инфильтрации или химического осаждения из газовой фазы содержит внешний кожух (12, 12'), реакционную камеру (14, 14'), нагревательную систему (22) для нагрева по меньшей мере реакционной камеры и систему циркуляций газа-реагента. Между внутренней стороной внешнего кожуха печи и внешней стороной реакционной камеры образовывается первый объем. Другой объем образовывается внутри реакционной камеры. Первый объем, разделенный на первую часть, которая образовывает зону нагрева и в которой размещена нагревательная система, и другую часть, в которой присутствует газ-реагент. Зона нагрева герметически изолирована от газа-реагента в другой части. Печь дополнительно содержит систему (34) циркуляции инертного газа, выполненную и размещенную с возможностью подачи инертного газа в зону нагрева. Об�
UAA200812518A 2006-04-25 2007-04-24 Технологическая печь и подобное оборудование UA94098C2 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0651455A FR2900226B1 (fr) 2006-04-25 2006-04-25 Four de traitement ou analogue

Publications (1)

Publication Number Publication Date
UA94098C2 true UA94098C2 (ru) 2011-04-11

Family

ID=37116170

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200812518A UA94098C2 (ru) 2006-04-25 2007-04-24 Технологическая печь и подобное оборудование

Country Status (15)

Country Link
US (1) US20070256639A1 (ru)
EP (1) EP1849889A1 (ru)
JP (1) JP5567332B2 (ru)
KR (1) KR20080111154A (ru)
CN (1) CN101063195A (ru)
AU (1) AU2007242730B2 (ru)
BR (1) BRPI0711411A2 (ru)
CA (1) CA2649986A1 (ru)
FR (1) FR2900226B1 (ru)
IL (1) IL194837A0 (ru)
MX (1) MX2008013643A (ru)
RU (1) RU2421544C2 (ru)
TW (1) TW200746876A (ru)
UA (1) UA94098C2 (ru)
WO (1) WO2007122225A1 (ru)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101178046B1 (ko) * 2009-03-23 2012-08-29 한국실리콘주식회사 폴리실리콘 제조용 화학기상증착 반응기
CN102374780A (zh) * 2010-08-12 2012-03-14 北京大方科技有限责任公司 一种平焰炉的结构设计方案
WO2013055967A1 (en) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Photovoltaic substrate
CN102534567B (zh) * 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法
FR2993044B1 (fr) * 2012-07-04 2014-08-08 Herakles Dispositif de chargement et installation pour la densification de preformes poreuses tronconiques et empilables
FR2993555B1 (fr) * 2012-07-19 2015-02-20 Herakles Installation d'infiltration chimique en phase vapeur a haute capacite de chargement
CN102889791B (zh) * 2012-09-27 2014-11-19 北京七星华创电子股份有限公司 炉体排风控制装置
CN105862013B (zh) * 2016-06-17 2018-07-06 南京大学 一种应用于小型mocvd系统的高温加热装置
CN107151779B (zh) * 2017-05-27 2019-04-16 西华大学 渗氮可控的零污染离子氮化装置
CN109197927B (zh) * 2018-08-31 2020-12-04 东莞市华美食品有限公司 一种基于物联网控制的食品智能烘烤系统
CN110242969B (zh) * 2019-05-23 2020-12-01 北京科技大学 一种焚硫炉
CN115094402B (zh) * 2022-06-24 2023-04-11 清华大学 一种立式双温区-双通道化学气相沉积设备
CN121023471A (zh) * 2025-10-29 2025-11-28 湖南顶立科技股份有限公司 一种用于cvd沉积设备的复合加热系统、协同控制方法及其在制备碳化钽涂层中的应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FR2594119B1 (fr) * 1986-02-10 1988-06-03 Europ Propulsion Installation pour l'infiltration chimique en phase vapeur d'un materiau refractaire autre que le carbone
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH07108836B2 (ja) * 1991-02-01 1995-11-22 株式会社日本生産技術研究所 減圧ｃｖｄ装置
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JPH05214540A (ja) * 1992-02-05 1993-08-24 Hitachi Ltd Ｃｖｄ反応のモニタ方法
KR100251873B1 (ko) * 1993-01-21 2000-04-15 마쓰바 구니유키 종형 열처리 장치
FR2714076B1 (fr) * 1993-12-16 1996-03-15 Europ Propulsion Procédé de densification de substrats poreux par infiltration chimique en phase vapeur de carbure de silicium.
RU2173354C2 (ru) * 1994-11-16 2001-09-10 З Би.эФ. Гудрич Кампэни Способ и устройство инфильтрации газовой фазы химического вещества и химического осаждения из газовой фазы (варианты), изделие, получаемое этим способом, устройство для подачи первого газа-реагента в печь для инфильтрации и осаждения из газовой фазы и фрикционный диск
AU3375000A (en) * 1999-02-19 2000-09-04 Gt Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
US6228174B1 (en) * 1999-03-26 2001-05-08 Ichiro Takahashi Heat treatment system using ring-shaped radiation heater elements
DE60032813T2 (de) * 2000-02-18 2007-11-08 Gt Solar Incorporated Cvd-verfahren und -vorrichtung zum abscheiden von polysilizium
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
JP4263024B2 (ja) * 2003-06-05 2009-05-13 株式会社ヒューモラボラトリー 炭素薄膜の製造方法および製造装置

Also Published As

Publication number Publication date
RU2421544C2 (ru) 2011-06-20
RU2008143663A (ru) 2010-05-27
US20070256639A1 (en) 2007-11-08
JP2009534541A (ja) 2009-09-24
BRPI0711411A2 (pt) 2011-11-01
KR20080111154A (ko) 2008-12-22
CN101063195A (zh) 2007-10-31
IL194837A0 (en) 2009-08-03
TW200746876A (en) 2007-12-16
AU2007242730A1 (en) 2007-11-01
FR2900226A1 (fr) 2007-10-26
JP5567332B2 (ja) 2014-08-06
MX2008013643A (es) 2008-11-10
AU2007242730B2 (en) 2012-02-23
WO2007122225A1 (en) 2007-11-01
CA2649986A1 (en) 2007-11-01
EP1849889A1 (en) 2007-10-31
FR2900226B1 (fr) 2017-09-29

Similar Documents

Publication Publication Date Title
UA94098C2 (ru) Технологическая печь и подобное оборудование
MY164322A (en) Gas switching section including valves having different flow coefficients for gas distribution system
TW200506089A (en) Controlling or modeling a chemical vapor infiltration process for densifying porous substrates with carbon
MX2007009897A (es) Metodo para la densificacion de sustratos porosos delgados por medio de infiltracion quimica de fase de vapor y dispositivo para cargar tales sustratos.
TW377387B (en) Fluid control apparatus
SG143207A1 (en) Gas baffle and distributor for semiconductor processing chamber
TW200737314A (en) Gas supply system, substrate processing apparatus and gas supply method
MX2008014199A (es) Sistema de reformulacion de gas que usa calor de un soplete de plasma.
WO2008138504A8 (en) Plasma source
TW200806392A (en) Microcartridge hydrogen generator
WO2007053607A3 (en) Pumping system for atomic layer deposition
WO2005124827A3 (en) Improved method and apparatus for the etching of microstructures
TW200613715A (en) Reaction vessel, liquid introduction device of reaction vessel, device for detecting the introduced reaction liquid, and liquid introudction device
GB2432165A (en) Method of inhibiting hydrate formation
WO2007016701A3 (en) Deposition apparatus for semiconductor processing
TW200712252A (en) Methods and systems for increasing substrate temperature in plasma reactors
PH12013500756A1 (en) Method for controlling thermal balance of a suspension smelting furnace and suspension smelting furnace
UA91584C2 (ru) Уплотнительное устройство для газового подвода печи или подобного аппарата и способ подачи газа
BG107838A (en) Coherent flow system with a separate ring for the flame of the torch
UA44391U (ru) Циклонный сепаратор для доменного газа
ZA200905343B (en) Multiple hearth furnace
WO2009150152A3 (en) System and process for the production of polycrystalline silicon for photovoltaic use
UA112323C2 (uk) Вогнетривкі продувальні пристрої
MY177056A (en) Glass melting method and glass melting furnace
WO2008000586A8 (de) Verfahren und vorrichtung zum einbringen von stäuben in eine metallschmelze einer pyrometallurgischen anlage