TWM655684U - Chamber structure of two-in-one photoelectric assisting process - Google Patents

Abstract

A two-in-one photoelectric assisted process chamber structure includes: a lower chamber having a containing space, and a chamber opening is opened at the top of the lower chamber; a top cover having an upper surface and a lower surface; the top cover further has a window and a plurality of vents, connecting the upper surface and the lower surface, and the vents are arranged around the window; an outer tube, the bottom end of which is arranged on the upper surface and covers the window and the vents; wherein the top cover seals the chamber opening, and the bottom surface faces the reaction space to form a reaction chamber; an inner tube, the bottom end of which is arranged on the upper surface and connected to the window, and the inner tube is The tube body is located in the outer tube body; wherein a first gas chamber is formed in the inner tube body and connected to the window; a second gas chamber is formed between the outer tube body and the inner tube body, and the second gas chamber is connected to the vents; an ultraviolet light source is arranged at the top of the inner tube body to emit an ultraviolet light to the first gas chamber; an induction coil is surrounded by the outer tube body to provide the outer tube body with a magnetic flux that changes with time to generate an induced electric field; and a lower cavity has a containing space, and a cavity opening is opened at the top of the lower cavity; wherein the top cover plate closes the cavity opening, and the lower surface faces the reaction space.

Description

Two-in-one photoelectric-assisted process chamber structure

This novel technology is related to the enhancement of ALD or ALE processes, and in particular to a two-in-one photoelectric-assisted process chamber structure.

In the atomic layer deposition (ALD) or atomic layer epitaxy (ALE) process, or other wafer surface processing processes, UV-assisted and plasma-enhanced techniques are used to enhance deposition or epitaxy.

In the traditional process, UV-assisted equipment and plasma-enhanced equipment are independent equipment, which means that UV-assisted and plasma-enhanced equipment cannot be performed at the same time and must be performed separately. Separately performing UV-assisted and plasma-enhanced equipment involves the transfer of wafers between different equipment, which affects the efficiency of ALD or ALE operations.

In view of the above technical problems, this novel invention proposes a two-in-one photo-assisted process chamber structure, which is used to combine ultraviolet light assistance and plasma enhancement in a single process.

The present invention proposes a two-in-one photoelectric assisted process chamber structure, comprising: a lower chamber having a containing space, and a chamber opening is opened at the top of the lower chamber; a top cover having an upper surface and a lower surface; the top cover further has a window and a plurality of vents, connecting the upper surface and the lower surface, and the vents are arranged around the window, wherein the top cover seals the chamber opening, and the lower surface faces the reaction space to form a reaction chamber; an outer tube, the bottom end of which is arranged on the upper surface and covers the window and the lower surface. a plurality of vents; an inner tube, the bottom end of which is disposed on the upper surface and connected to the window, and the inner tube is located in the outer tube; wherein a first gas chamber is formed in the inner tube and connected to the window; a second gas chamber is formed between the outer tube and the inner tube, and the second gas chamber is connected to the vents; an ultraviolet light source is disposed at the top end of the inner tube to emit an ultraviolet light to the first gas chamber; and an induction coil is wrapped around the outer tube to provide the outer tube with a magnetic flux that varies with time to generate an induced electric field.

In at least one embodiment, the two-in-one photoelectrically assisted process chamber structure further includes a wafer carrier, which is located in the reaction space of the lower chamber, and the wafer carrier is arranged corresponding to the lower surface of the top cover plate. The wafer carrier includes a wafer carrier plate, a linear driver and a bias power supply; the top surface of the wafer carrier plate faces the lower surface of the top cover plate, the linear driver is connected to the bottom surface of the wafer carrier plate, and is used to drive the wafer carrier plate to move up and down linearly, the wafer carrier plate is connected to the bias power supply, and the bias power supply is used to apply a bias to the wafer carrier plate.

In at least one embodiment, the two-in-one photoelectrically assisted processing chamber structure further includes a first showerhead, which is combined with the lower surface of the top cover plate, surrounds the window, and covers the vent holes.

In at least one embodiment, the top cover plate includes a front drive pipeline connecting the upper surface and the lower surface, and one end of the front drive pipeline located on the upper surface is used to connect to a front drive supply source, and one end of the front drive pipeline located on the lower surface is located outside the vents.

In at least one embodiment, the two-in-one photoelectrically assisted process chamber structure further includes a second spray head, which is combined with the lower surface of the top cover plate and covers one end of the front drive pipeline located on the lower surface; wherein the ratio between the outer diameter of the first spray head and the outer diameter of the second spray head is between 0.3 and 0.9.

In at least one embodiment, the ratio of the inner diameter of the inner tube to the inner diameter of the outer tube is between 0.1 and 0.6.

In at least one embodiment, the two-in-one photoelectrically assisted process chamber structure further includes a spacer connected to the top ends of the outer tube and the inner tube, and the ultraviolet light source is combined with the spacer.

In at least one embodiment, the partition further includes: at least one first air intake pipeline, the first air intake pipeline extends from the outer side of the partition to the central opening, and the first air intake pipeline is used to connect to a first gas source, so that the first gas chamber is connected to the first air intake pipeline through the central opening, and the first air intake pipeline is used to receive the first gas and transport it to the first gas chamber; and at least one second air intake pipeline, the second air intake pipeline extends from the outer side of the partition into the outer cavity, and the second air intake pipeline is used to connect to a second gas source, so that the second gas chamber is connected to the second air intake pipeline through the outer cavity, and the second air intake pipeline is used to receive the second gas and transport it to the second gas chamber.

In at least one embodiment, the two-in-one photoelectrically assisted process chamber structure further includes two transparent partitions for sealing the top and bottom of the inner tube, so that the first gas chamber is closed.

In at least one embodiment, the two-in-one photoelectrically assisted process chamber structure further includes an adapter ring for directly or indirectly coupling to the outer tube and the top end of the inner tube, and the top surface of the adapter ring matches the ultraviolet light source, so that the ultraviolet light source is coupled to the top end of the inner tube through the adapter ring.

Based on the above two-in-one photo-assisted process chamber structure, the functions of UV-assisted and plasma-enhanced can be combined in a single design. A single design can use UV-assisted and plasma-enhanced at the same time, or choose to implement either UV-assisted or plasma-enhanced, but there is no need to transfer wafers between different equipment, which can effectively improve the efficiency of the ALD/ALE process.

110: Top cover

111: Upper surface

112: Lower surface

113: Setting slot

114: Window

115: Ventilation hole

116: Front drive pipeline

120: Outer tube body

122: Second gas chamber

130: Inner tube body

131: First gas chamber

140: UV light source

150: Induction coil

160: Spacer

161: Central opening

162: Lateral cavity

163: First air intake line

164: Second air intake line

170: Coil bracket

180: Transparent partition

190: Adapter ring

200: Lower cavity

200a: Reaction space

201: Cavity opening

202: Stopper

210: First sprinkler head

210a: Plasma channel

220: Second sprinkler head

220a: Front drive channel

230: Wafer carrier

232: Wafer carrier plate

234: Linear drive

236: Heater

240: Bias power supply

a: Inner diameter of inner tube

b: Inner diameter of outer tube

c: Outer diameter of the first sprinkler head

d: Outer diameter of the second sprinkler head

S110~S160: Steps

Figure 1 is a cross-sectional exploded view of the two-in-one photoelectrically assisted process chamber structure in the present novel embodiment.

Figure 2 is a cross-sectional view of the two-in-one photoelectrically assisted process chamber structure in this novel embodiment.

Figures 3 and 4 are cross-sectional views of some components in the two-in-one photoelectrically assisted process chamber structure in the present novel embodiment.

Figure 5 is a cross-sectional exploded view of some components in the two-in-one photoelectrically assisted process chamber structure in the present novel embodiment.

Figure 6 is another cross-sectional view of the two-in-one photoelectrically assisted process chamber structure in the present novel embodiment.

Figure 7 is a three-dimensional diagram of the top cover plate, the first sprinkler head and the second sprinkler head in this new embodiment.

Figure 8 is a three-dimensional diagram of the first sprinkler head and the second sprinkler head in this new embodiment.

Figures 9 and 10 are flow charts of the novel UV-assisted and plasma-enhanced process method.

Please refer to Figures 1 and 2, which show a two-in-one photoelectrically assisted process chamber structure disclosed in this novel embodiment, which is used to perform ultraviolet light-assisted and plasma-enhanced process methods.

As shown in FIG. 1 and FIG. 2 , the photoelectrically assisted process chamber structure includes a top cover plate 110, an outer tube 120, an inner tube 130, an ultraviolet light source 140, an induction coil 150, and a lower chamber 200.

As shown in FIG. 2 , the lower chamber 200 has a reaction space 200a. A chamber opening 201 is provided at the top of the lower chamber 200, and the chamber opening 201 is connected to the reaction space 200a.

As shown in FIG. 1 and FIG. 2 , the top cover 110 has an upper surface 111 and a lower surface 112, and the upper surface 111 has a recessed setting groove 113. The top cover 110 further has a window 114 and a plurality of ventilation holes 115 located in the setting groove 113. The window 114 and the ventilation holes 115 are connected to the upper surface 111 and the lower surface 112 respectively, and the ventilation holes 115 are arranged around the window 114.

As shown in FIG. 2 , the top cover 110 is disposed at the cavity opening 201 and closes the cavity opening 201. The lower surface 112 of the top cover 110 faces the reaction space 200a, so that the outer tube 120, the inner tube 130, the ultraviolet light source 140 and the induction coil 150 are located outside the lower cavity 200, and the bottom ends of the outer tube 120 and the inner tube 130 face the reaction space 200a to form a reaction cavity.

As shown in Figures 1 and 2, the inner tube 130 is located in the outer tube 120, the bottom end of the outer tube 120 covers the window 114 and the vents 115, and the bottom end of the inner tube 130 is connected to the window 114, so that the inner tube 130 and the outer tube 120 are connected to the reaction chamber.

As shown in FIG. 1 and FIG. 2 , the outer tube 120 can be a round tube, a square tube or other types of tubes. The bottom end of the outer tube 120 is disposed on the upper surface 111, and the outer tube 120 covers the window 114 and the vents 115 with its bottom end. The bottom end of the inner tube 130 is disposed on the upper surface 111, and the inner tube 130 is connected to the window 114 with its bottom end. The inner tube 130 is located in the outer tube 120. A first gas chamber 131 is formed inside the inner tube 130, and the first gas chamber 131 is connected to the window 114. A second gas chamber 122 is formed between the outer tube 120 and the inner tube 130, and the second gas chamber 122 is connected to the vents 115.

As shown in FIG. 1 and FIG. 2 , the ultraviolet light source 140 is disposed at the top of the inner tube 130 to emit ultraviolet light to the first gas chamber 131 to excite a first gas entering the first gas chamber 131 to an excited state. Specifically, the photoelectrically assisted processing chamber structure further includes a spacer 160 connected to the outer tube 120 and the top of the inner tube 130, and the ultraviolet light source 140 is combined with the spacer 160. The spacer 160 has a central opening 161 and an outer cavity 162, and the outer cavity 162 is adjacent to the central opening 161 and is located outside the central opening 161. The central opening 161 is connected to the first gas chamber 131, and the outer cavity 162 is connected to the second gas chamber 122. The ultraviolet light source 140 projects ultraviolet light to the first gas chamber 131 through the central opening 161. Specifically, the frequency of the ultraviolet light is selected according to the first gas filled in the first gas chamber 131, so that the first gas is excited by the ultraviolet light and emits excitation light with a predetermined wavelength.

Please refer to Figures 3 and 4, which are schematic cross-sectional views of the spacer 160 in different directions.

As shown in FIG. 3 , the partition 160 further includes at least one first air inlet pipe 163. The first air inlet pipe 163 extends from the outer side of the partition 160 to the central opening 161, and the first air inlet pipe 163 is used to connect to a first gas source S1, so that the first gas chamber 131 is connected to the first air inlet pipe 163 through the central opening 161. The first air inlet pipe 163 is used to receive a first gas and transport it to the first gas chamber 131. The first gas chamber 131 is used to contain the first gas, and the ultraviolet light excites the first gas to an excited state.

As shown in FIG. 4 , the partition 160 further includes at least one second air inlet pipe 164. The second air inlet pipe 164 extends from the outer side of the partition 160 into the outer cavity 162, and the second air inlet pipe 164 is used to connect to a second gas source S2, so that the second gas chamber 122 is connected to the second air inlet pipe 164 through the outer cavity 162. The second air inlet pipe 164 is used to receive a second gas and transport it to the second gas chamber 122.

There can be multiple first air inlet lines 163, which are connected to different first gas sources S1, and different first gas sources S1 provide different types of first gas. By switching the valve, the specified type of first gas can be delivered to the first gas chamber 131 as required. Similarly, there can be multiple second air inlet lines 164, which are connected to different second gas sources S2, and different second gas sources S2 provide different types of second gas. By switching the valve, the specified type of second gas can be delivered to the second gas chamber 122 as required.

As shown in FIG. 1 and FIG. 2 , in addition, the photoelectrically assisted process chamber structure further includes two transparent partitions 180 for sealing the top and bottom of the inner tube 130 so that the first gas chamber 131 is closed, and the first gas chamber 131 is connected to the first gas source S1 through a first air inlet pipe 163 so that the first gas can be filled in the first gas chamber 131. The two transparent partitions 180 can be directly combined with the top and bottom of the inner tube 130, or combined with the partition 160 and the top cover 110, that is, the two transparent partitions 180 are respectively arranged at the central opening 161 and the window 114, and the top and bottom of the inner tube 130 are respectively combined with the partition 160 and the top cover 110, so as to seal the top and bottom of the inner tube 130. Specifically, the transparent partition 180 can be glass with a evaporated film on the surface of which fluoride such as magnesium fluoride (MgF2) is evaporated. The evaporated film is mainly selected from materials that do not affect the penetration of ultraviolet light and have anti-reflection properties.

As shown in Figures 1, 2 and 4, the induction coil 150 surrounds the outer tube 120 to provide the outer tube 120 with a magnetic flux that changes with time to induce an electric field. The second gas enters the second gas chamber 122 through the second air inlet pipe 164. The second gas chamber 122 is used for the second gas to flow, and the second gas is ionized by the electric field to generate plasma, and is released to the bottom of the top cover 110 through the vents 115.

The electric field causes the plasma to be generated by ionization, and the plasma is accelerated toward the bottom and released to the bottom of the top cover 110 through the vent hole 115. In a specific embodiment, the two-in-one photoelectric assisted process chamber structure further includes at least one coil support 170. The induction coil 150 is at least partially fixed to the coil support 170, and the coil support 170 is detachably fixed to the upper surface 111 of the top cover 110. The induction coil 150 is combined with the coil support 170 to form a detachable coil module. By replacing the coil support 170, the induction coil 150 arranged around the outer tube 120 can be quickly replaced to generate different induced electric fields according to needs.

As shown in FIG5 , in addition, the photoelectrically assisted processing chamber structure may further include an adapter ring 190. The bottom surface of the adapter ring 190 matches the top of the outer tube 120 and the inner tube 130, or matches the spacer 160, and is used to be directly or indirectly combined with the top of the outer tube 120 and the inner tube 130. The top surface of the adapter ring 190 matches the ultraviolet light source 140, so that the ultraviolet light source 140 can be combined with the top of the inner tube 130 through the adapter ring 190 and/or the spacer 160. As shown in FIG6 , specifically, let the inner diameter of the inner tube 130 be a, and the inner diameter of the outer tube 120 be b. The ratio of the inner diameter a of the inner tube to the inner diameter b of the outer tube is preferably between 0.1 and 0.6 (0.1<a/b<0.6), which can achieve a better photoelectrically assisted process effect.

Referring to FIG. 1, FIG. 2, FIG. 7 and FIG. 8, in addition, the photo-assisted process chamber structure may further include a first shower head 210. The first shower head 210 is annular, combined with the lower surface 112 of the top cover plate 110, surrounding the window 114, and covering the vent hole 115, thereby forming a plasma channel 210a, and the plasma channel 210a is simultaneously connected to the reaction space 200a of the lower chamber 200. As shown in FIG. 1, the second gas is ionized by the electric field to generate plasma, and is accelerated toward the bottom, and after passing through the vent hole 115, enters the plasma channel 210a. Through the dispersion of the first spray head 210, it can be more evenly dispersed in the reaction space 200a of the lower chamber 200. The first spray head 210 can achieve an ion filtering effect by grounding or adjusting the plasma channel 210a so that only free ions can pass through.

As shown in FIG. 1 and FIG. 2 , the top cover plate 110 includes a front-driver pipeline 116, which connects the upper surface 111 and the lower surface 112. One end of the front-driver pipeline 116 located on the upper surface 111 is connected to the front-driver supply source S3, and one end of the front-driver pipeline 116 located on the lower surface 112 is located on the outer side of the vent 115. In addition, the photoelectric-assisted processing chamber structure further includes a second sprinkler 220. The second sprinkler 220 is also annular, combined with the lower surface 112 of the top cover plate 110, and surrounds the first sprinkler 210. The second sprinkler 220 covers one end of the front-driver pipeline 116 located on the lower surface 112 to form a front-driver channel 220a. The precursor channel 220a is connected to the reaction space 200a of the lower chamber 200 and is used to evenly distribute the precursor into the reaction space 200a.

The first nozzle 210 and the second nozzle 220 respectively provide a plasma channel 210a and a pre-driver channel 220a that are isolated from each other, which can prevent the pre-driver from contacting the plasma prematurely and depositing, thereby clogging the nozzle. As shown in FIG6 , specifically, the outer diameter of the first nozzle 210 is c, and the outer diameter of the second nozzle 220 is d. The preferred ratio between the outer diameter c of the first nozzle 210 and the outer diameter d of the second nozzle 220 is between 0.3 and 0.9 (0.3<c/d<0.9).

As shown in FIG. 2 , the photo-assisted process chamber structure further includes a wafer carrier 230, which is located in the reaction space 200a of the lower chamber 200, and the wafer carrier 230 is disposed corresponding to the lower surface 112 of the top cover 110. The wafer carrier 230 includes a wafer carrier plate 232 and a linear driver 234. The top surface of the wafer carrier plate 232 faces the lower surface 112 of the top cover 110, and the top surface of the wafer carrier plate 232 is used to support a wafer so that the precursor is attached to the surface of the wafer and assisted by the excitation light and plasma to form a good atomic layer bond. In addition, the wafer carrier 232 can be connected to a bias power source 240, and the bias power source 240 is used to apply a bias current in the form of a radio frequency to the wafer carrier 232 to generate an electric field to attract plasma or precursors and enhance the deposition effect on the wafer surface. The linear driver 234 is connected to the bottom surface of the wafer carrier 232 to drive the wafer carrier 232 to move up and down linearly to approach or move away from the top cover 110. In addition, the lower chamber 200 can also include a baffle 202 extending in the reaction space 200a and arranged around the wafer carrier 232. In addition, a heater 236, such as an electric heating tube, can also be provided inside the wafer carrier 230 to heat the wafer so as to maintain the temperature at the temperature required for the deposition reaction.

Based on the above two-in-one photoelectrically assisted process chamber structure, this novel invention proposes a UV-assisted and plasma-enhanced process method.

As shown in FIG. 2 and FIG. 9 , the process method first provides a lower chamber 200, as shown in step S110. The lower chamber 200 has a reaction space 200a, and a chamber opening 201 is opened at the top of the lower chamber 200, and the chamber opening 201 is connected to the reaction space 200a.

As shown in FIG. 1 , FIG. 2 and FIG. 9 , the process method first provides a top cover plate 110, and uses the top cover plate 110 to seal the cavity opening 201, as shown in step S120. The top cover plate 110 has an upper surface 111 and a lower surface 112, and the lower surface 112 of the top cover plate 110 faces the reaction space 200a. The top cover plate 110 further has a window 114 and a plurality of vents 115 that connect the upper surface 111 and the lower surface 112, respectively, and the vents 115 are arranged around the window 114. In a specific embodiment, the window 114 and the plurality of vents 115 are located in the setting groove 113.

As shown in Figures 1, 2 and 9, an outer tube 120 and an inner tube 130 are then provided, so that the inner tube 130 is located in the outer tube 120, the bottom end of the outer tube 120 covers the window 114 and the vents 115, and the bottom end of the inner tube 130 is connected to the window 114, as shown in step S130. A first gas chamber 131 is formed inside the inner tube 130, and the first gas chamber 131 is connected to the window 114; a second gas chamber 122 is formed between the outer tube 120 and the inner tube 130, and the second gas chamber 122 is connected to the vents 115.

As shown in Figures 1, 2 and 9, an ultraviolet light source 140 is disposed at the top of the inner tube 130, as shown in step S140. The ultraviolet light source 140 is used to emit ultraviolet light to the first gas chamber 131 to excite a first gas entering the first gas chamber 131 into an excited state to generate excitation light.

As shown in FIG. 1, FIG. 2 and FIG. 9, an induction coil 150 is provided around the outer tube 120, as shown in step S150. The induction coil 150 is used to provide the outer tube 120 with a magnetic flux that varies with time to induce an electric field so that a second gas is ionized to generate plasma.

As shown in FIG. 1 , FIG. 2 and FIG. 10 , a first gas is introduced into the first gas chamber 131 , and a second gas is introduced into the second gas chamber 122 , as shown in step S160 .

As shown in FIG. 1 , FIG. 2 and FIG. 10 , the ultraviolet light source 140 and the induction coil 150 can be selectively activated to emit excitation light and plasma through the lower surface 112 of the top cover plate 110 , as shown in step S170 .

Referring to FIG. 2 , the process method further includes providing a wafer carrier 230, which is located in the reaction space 200a of the lower chamber 200, and the wafer carrier 230 is arranged corresponding to the lower surface 112 of the top cover 110; wherein the wafer carrier 230 includes a wafer carrier plate 232 and a linear actuator 234, the top surface of the wafer carrier plate 232 faces the lower surface 112 of the top cover 110, and the top surface of the wafer carrier plate 232 is used to carry a wafer. The linear actuator 234 is connected to the bottom surface of the wafer carrier plate 232 to drive the wafer carrier plate 232 to move up and down linearly to approach or move away from the top cover 110. The wafer carrier plate 232 can be further connected to a bias power supply 240, which is used to apply a bias current in the form of a radio frequency to the wafer carrier plate 232 to generate an electric field to attract plasma or precursors and enhance the deposition effect on the wafer surface.

Referring to FIGS. 1, 2, 7 and 8, the process method further includes providing a first spray head 210, which is combined with the lower surface 112 of the top cover plate 110, surrounds the window 114, and covers the vent hole 115 to form a plasma channel 210a, and the plasma channel 210a is simultaneously connected to the reaction space 200a of the lower chamber 200. The first spray head 210 is used to evenly disperse plasma into the reaction space 200a of the lower chamber 200. The process method further includes providing a second spray head 220, which is combined with the lower surface 112 of the top cover plate 110, and covers an end of a precursor pipeline 116 located on the lower surface 112 to form a precursor channel 220a. The precursor channel 220a is connected to the reaction space 200a of the lower chamber 200 and is used to evenly distribute the precursor.

As shown in Figures 1, 2, 3 and 4, the step of setting the ultraviolet light source 140 at the top of the inner tube 130 may further include setting a spacer 160 connected to the outer tube 120 and the top of the inner tube 130, and combining the ultraviolet light source 140 with the spacer 160. As shown in the figure, the spacer 160 has a central opening 161 and an outer cavity 162, the central opening 161 is connected to the first gas chamber 131, and the outer cavity 162 is connected to the second gas chamber 122.

As shown in FIG. 3 and FIG. 4, in addition, in a specific embodiment, the manufacturing method further includes providing at least one first air inlet pipe 163 in the spacer 160. The first air inlet pipe 163 extends from the outer side of the spacer 160 to the central opening 161, and is used to receive a first gas and transport it to the first gas chamber 131. The spacer 160 also includes at least one second air inlet pipe 164. The second air inlet pipe 164 extends from the outer side of the spacer 160 into the outer cavity 162, and is used to receive a second gas and transport it to the second gas chamber 122.

In addition, as shown in FIG. 1 to FIG. 5, in step S120 of setting the outer tube body 120 and the inner tube body 130, two transparent partitions 180 are further set to seal the top and bottom of the inner tube body 130, so that the first gas chamber 131 is closed.

As shown in FIG. 1 and FIG. 2 , in the step of setting the induction coil 150 around the outer tube 120, a coil bracket 170 is provided to fix the induction coil 150 on the coil bracket 170, and the coil bracket 170 is detachably fixed on the upper surface 111 of the top cover 110.

As shown in FIG. 1, FIG. 2 and FIG. 5, in addition, before the ultraviolet light source 140 is set, an adaptor ring 190 is provided, which is combined with the ultraviolet light source 140 and combined with the top ends of the outer tube 120 and the inner tube 130, so that the ultraviolet light source 140 can be combined with the top end of the inner tube 130 through the adaptor ring 190 and/or the spacer 160.

Based on the above two-in-one photo-assisted process chamber structure and the process method of UV-assisted and plasma-enhanced, the functions of UV-assisted and plasma-enhanced can be combined in a single design. A single design can use UV-assisted and plasma-enhanced at the same time, or choose to implement either UV-assisted or plasma-enhanced, but there is no need to transfer wafers between different equipment, which can effectively improve the efficiency of the ALD/ALE process.

110: Top cover

111: Upper surface

112: Lower surface

113: Setting slot

114: Window

115: Ventilation hole

116: Front drive pipeline

120: Outer tube body

122: Second gas chamber

130: Inner tube body

131: First gas chamber

140: UV light source

150: Induction coil

160: Spacer

161: Central opening

162: Lateral cavity

170: Coil bracket

180: Transparent partition

190: Adapter ring

200: Lower cavity

200a: Reaction space

201: Cavity opening

202: Stopper

210: First sprinkler head

210a: Plasma channel

220: Second sprinkler head

220a: Front drive channel

230: Wafer carrier

232: Wafer carrier plate

234: Linear drive

236: Heater

240: Bias power supply

Claims (10)

A two-in-one photoelectric-assisted process chamber structure includes: a lower chamber having a containing space, and a chamber opening is opened at the top of the lower chamber; a top cover having an upper surface and a lower surface; the top cover further has a window and a plurality of vents, connecting the upper surface and the lower surface, and the vents are arranged around the window; wherein the top cover seals the chamber opening, and the lower surface faces the reaction space to form a reaction chamber; an outer tube, the bottom end of which is arranged on the upper surface and covers the window and the vents ; an inner tube, whose bottom end is arranged on the upper surface and connected to the window, and the inner tube is located in the outer tube; wherein a first gas chamber is formed in the inner tube and connected to the window; a second gas chamber is formed between the outer tube and the inner tube, and the second gas chamber is connected to the vents; an ultraviolet light source is arranged at the top of the inner tube to emit an ultraviolet light to the first gas chamber; and an induction coil is wrapped around the outer tube to provide the outer tube with a magnetic flux that varies with time to generate an induced electric field. The two-in-one photo-assisted process chamber structure as described in claim 1 further includes a wafer carrier, which is located in the reaction space of the lower chamber, and the wafer carrier is arranged corresponding to the lower surface of the top cover plate, and the wafer carrier includes a wafer carrier plate, a linear driver and a bias power supply; the top surface of the wafer carrier plate faces the lower surface of the top cover plate, the linear driver is connected to the bottom surface of the wafer carrier plate, and is used to drive the wafer carrier plate to move up and down linearly, the wafer carrier plate is connected to the bias power supply, and the bias power supply is used to apply a bias to the wafer carrier plate. The two-in-one photoelectrically assisted process chamber structure as described in claim 1 further includes a first showerhead, which is combined with the lower surface of the top cover plate, surrounds the window, and covers the vent holes. The two-in-one optoelectronically assisted process chamber structure as described in claim 3, wherein the top cover plate includes a front-driver pipeline connecting the upper surface and the lower surface, and one end of the front-driver pipeline located on the upper surface is used to connect to a front-driver supply source, and one end of the front-driver pipeline located on the lower surface is located outside the vents. The two-in-one photoelectrically assisted process chamber structure as described in claim 4 further includes a second spray head, which is combined with the lower surface of the top cover plate and covers an end of the front drive pipeline located on the lower surface; wherein the ratio between the outer diameter of the first spray head and the outer diameter of the second spray head is between 0.3 and 0.9. The two-in-one photoelectrically assisted process chamber structure as described in claim 1, wherein the ratio of the inner diameter of the inner tube to the inner diameter of the outer tube is between 0.1 and 0.6. The two-in-one photoelectrically assisted process chamber structure as described in claim 1 further includes a spacer connected to the top ends of the outer tube and the inner tube, and the ultraviolet light source is combined with the spacer. The two-in-one photoelectric-assisted process chamber structure as described in claim 7, wherein the partition further comprises: at least one first air inlet pipeline, the first air inlet pipeline extends from the outer side of the partition to the central opening, and the first air inlet pipeline is used to connect to a first gas source, so that the first gas chamber is connected to the first air inlet pipeline through the central opening, and the first air inlet pipeline is used to receive the first gas and transport it to the first gas chamber; and at least one second air inlet pipeline, the second air inlet pipeline extends from the outer side of the partition into the outer cavity, and the second air inlet pipeline is used to connect to a second gas source, so that the second gas chamber is connected to the second air inlet pipeline through the outer cavity, and the second air inlet pipeline is used to receive the second gas and transport it to the second gas chamber. The two-in-one photoelectrically assisted process chamber structure as described in claim 1 further includes two transparent partitions for sealing the top and bottom of the inner tube, so that the first gas chamber is closed. The two-in-one photoelectrically assisted process chamber structure as described in claim 1 further includes an adapter ring for directly or indirectly coupling to the outer tube and the top end of the inner tube, and the top surface of the adapter ring matches the ultraviolet light source so that the ultraviolet light source is coupled to the top end of the inner tube through the adapter ring.

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