TWI880290B - Uv-assisted and plasma enhanced process method - Google Patents

Abstract

A UV-assisted and plasma-enhanced process method includes of the following steps: providing a lower chamber with an chamber opening and a reaction space defined therein; providing an upper cover with an upper surface and a lower surface, and the upper cover has a window and ventilation holes connecting the upper surface and the lower surface; sealing the chamber opening of the lower chamber with the upper cover to form a reaction chamber; providing an outer tube body and an inner tube body, wherein he inner tube body is disposed in the outer tube body, a bottom end of the outer tube body covers the window and the vent holes, and a bottom end of the inner tube body is connected to the window; wherein a first gas chamber is formed inside the inner tube body and the first gas chamber is connected to the window, and a second gas chamber is formed between the outer tube body and the inner tube body, and the second gas chamber is connected to the ventilation holes; providing a UV light source at a top end of the inner tube body; providing an induction coil around the outer tube body;; inducing a first gas to the first gas chamber and a second gas to the second gas chamber; and activating the UV light source and the induction coil optionally.

Description

UV-assisted and plasma-enhanced process

The present invention relates to the enhancement of ALD or ALE processes, and more particularly to a UV-assisted and plasma-enhanced process method.

In the atomic layer deposition (ALD) or atomic layer epitaxy (ALE) process, or other wafer surface processing processes, UV-assisted and plasma-enhanced techniques are used to enhance deposition or epitaxy.

In the traditional process, UV-assisted equipment and plasma-enhanced equipment are independent equipment, which means that UV-assisted and plasma-enhanced equipment cannot be performed at the same time and must be performed separately. Separately performing UV-assisted and plasma-enhanced equipment involves the transfer of wafers between different equipment, which affects the efficiency of ALD or ALE operations.

In view of the above technical problems, the present invention proposes a UV-assisted and plasma-enhanced process method for combining UV-assisted and plasma-enhanced in a single process.

The present invention proposes a UV-assisted and plasma-enhanced process method, comprising: providing a lower cavity; wherein the lower cavity has a reaction space, and a cavity opening is opened at the top of the lower cavity; providing a top cover plate; wherein the top cover plate has an upper surface and a lower surface, and the top cover plate further has a window and a plurality of vents, respectively connecting the upper surface and the lower surface, and the vents are arranged around the window; the cavity opening is sealed with the top cover plate, and the lower surface is made to face the reaction space to form a reaction cavity; an outer tube and an inner tube are arranged, the inner tube is located in the outer tube, and the bottom end of the outer tube covers the window and the vents. The invention relates to a method for manufacturing a first gas chamber, wherein the inner tube forms a first gas chamber inside and the first gas chamber is connected to the window; a second gas chamber is formed between the outer tube and the inner tube, and the second gas chamber is connected to the vents; an ultraviolet light source is arranged at the top of the inner tube to emit ultraviolet light to the first gas chamber; an induction coil is arranged around the outer tube to provide the outer tube with a magnetic flux that varies with time to induce an electric field; a first gas is introduced into the first gas chamber, and a second gas is introduced into the second gas chamber; and the ultraviolet light source and the induction coil can be selectively activated.

In at least one embodiment, the UV-assisted and plasma-enhanced process method further includes providing a first showerhead coupled to the lower surface of the top cover plate and covering the vents.

In at least one embodiment, the UV-assisted and plasma-enhanced process method further includes providing a second spray head that is coupled to the lower surface of the top cover plate and covers an end of a precursor pipeline located on the lower surface.

In at least one embodiment, a ratio between an outer diameter of the first showerhead and an outer diameter of the second showerhead is between 0.3 and 0.9.

In at least one embodiment, the ratio of the inner diameter of the inner tube to the inner diameter of the outer tube is between 0.1 and 0.6.

In at least one embodiment, the step of setting the ultraviolet light source at the top of the inner tube further includes setting a spacer connected to the outer tube and the top of the inner tube, and combining the ultraviolet light source with the spacer; wherein the spacer has a central opening and an outer cavity, the central opening is connected to the first gas chamber, and the outer cavity is connected to the second gas chamber.

In at least one embodiment, the UV-assisted and plasma-enhanced process method further includes: setting at least one first air inlet pipe on the partition, extending from the outer side surface of the partition to the central opening, for receiving the first gas and transporting it to the first gas chamber; and setting at least one second air inlet pipe on the partition, extending from the outer side surface of the partition to the outer cavity, for receiving the second gas and transporting it to the second gas chamber.

In at least one embodiment, the step of disposing the outer tube and the inner tube further includes disposing two transparent partitions to seal the top and bottom of the inner tube, so that the first gas chamber is closed.

In at least one embodiment, before the ultraviolet light source is set, an adapter ring is provided, which is combined with the ultraviolet light source and combined with the outer tube body and the top end of the inner tube body, so that the ultraviolet light source is combined with the top end of the inner tube body through the adapter ring.

In at least one embodiment, the UV-assisted and plasma-enhanced process method further includes providing a wafer carrier, which is located in the reaction space of the lower chamber, and the wafer carrier is arranged corresponding to the lower surface of the top cover; wherein the wafer carrier includes a wafer carrier plate and a linear driver, the top surface of the wafer carrier plate faces the lower surface of the top cover plate, and the linear driver is connected to the bottom surface of the wafer carrier plate to drive the wafer carrier plate to move up and down linearly.

Based on the above-mentioned UV-assisted and plasma-enhanced process methods, the functions of UV-assisted and plasma-enhanced can be combined in a single design. A single design can use UV-assisted and plasma-enhanced at the same time, or can choose to implement either UV-assisted or plasma-enhanced, but there is no need to transfer wafers between different equipment, which can effectively improve the efficiency of the ALD/ALE process.

Please refer to FIG. 1 and FIG. 2 , which are two-in-one photo-assisted process chamber designs disclosed in an embodiment of the present invention, for performing UV-assisted and plasma-enhanced process methods.

As shown in FIG. 1 and FIG. 2 , the photoelectrically assisted processing chamber design includes a top cover plate 110 , an outer tube 120 , an inner tube 130 , an ultraviolet light source 140 , an induction coil 150 and a lower chamber 200 .

As shown in Fig. 2, the lower chamber 200 has a reaction space 200a. A chamber opening 201 is opened at the top of the lower chamber 200, and the chamber opening 201 is connected to the reaction space 200a.

As shown in FIG. 1 and FIG. 2 , the top cover 110 has an upper surface 111 and a lower surface 112, and the upper surface 111 has a recessed groove 113. The top cover 110 further has a window 114 and a plurality of vents 115 located in the groove 113. The window 114 and the vents 115 are connected to the upper surface 111 and the lower surface 112 respectively, and the vents 115 are arranged around the window 114.

As shown in FIG2 , the top cover 110 is disposed at the cavity opening 201 and closes the cavity opening 201. The lower surface 112 of the top cover 110 faces the reaction space 200a, so that the outer tube 120, the inner tube 130, the ultraviolet light source 140 and the sensing coil 150 are located outside the lower cavity 200, and the bottom ends of the outer tube 120 and the inner tube 130 face the reaction space 200a to form a reaction cavity.

As shown in FIG. 1 and FIG. 2 , the inner tube 130 is located in the outer tube 120 , the bottom end of the outer tube 120 covers the window 114 and the vents 115 , and the bottom end of the inner tube 130 is connected to the window 114 , thereby connecting the inner tube 130 and the outer tube 120 to the reaction chamber.

As shown in FIG. 1 and FIG. 2 , the outer tube 120 can be a round tube, a square tube or a tube of other shapes. The bottom end of the outer tube 120 is disposed on the upper surface 111, and the outer tube 120 covers the window 114 and the vents 115 with its bottom end. The bottom end of the inner tube 130 is disposed on the upper surface 111, and the inner tube 130 is connected to the window 114 with its bottom end. The inner tube 130 is located in the outer tube 120. A first gas chamber 131 is formed inside the inner tube 130, and the first gas chamber 131 is connected to the window 114. A second gas chamber 122 is formed between the outer tube 120 and the inner tube 130, and the second gas chamber 122 is connected to the vents 115.

As shown in FIG. 1 and FIG. 2 , the ultraviolet light source 140 is disposed at the top of the inner tube 130 to emit an ultraviolet light to the first gas chamber 131 to excite a first gas entering the first gas chamber 131 to an excited state. Specifically, the photoelectrically assisted processing chamber design further includes a spacer 160 connected to the outer tube 120 and the top of the inner tube 130, and the ultraviolet light source 140 is combined with the spacer 160. The spacer 160 has a central opening 161 and an outer cavity 162, and the outer cavity 162 is adjacent to the central opening 161 and is located on the outer side of the central opening 161. The central opening 161 is connected to the first gas chamber 131, and the outer cavity 162 is connected to the second gas chamber 122. The ultraviolet light source 140 projects ultraviolet light to the first gas chamber 131 through the central opening 161. Specifically, the frequency of the ultraviolet light is selected according to the first gas filled in the first gas chamber 131, so that the first gas is excited by the ultraviolet light and emits excitation light with a predetermined wavelength.

Please refer to FIG. 3 and FIG. 4 , which are schematic cross-sectional views of the spacer 160 in different directions.

As shown in FIG3 , the partition 160 further includes at least one first air inlet pipe 163. The first air inlet pipe 163 extends from the outer side of the partition 160 to the central opening 161, and the first air inlet pipe 163 is used to connect to a first gas source S1, so that the first gas chamber 131 is connected to the first air inlet pipe 163 through the central opening 161. The first air inlet pipe 163 is used to receive a first gas and transport it to the first gas chamber 131. The first gas chamber 131 is used to contain the first gas, and the ultraviolet light excites the first gas to an excited state.

As shown in FIG4 , the partition 160 further includes at least one second air inlet pipe 164. The second air inlet pipe 164 extends from the outer side of the partition 160 into the outer cavity 162, and the second air inlet pipe 164 is used to connect to a second gas source S2, so that the second gas chamber 122 is connected to the second air inlet pipe 164 through the outer cavity 162. The second air inlet pipe 164 is used to receive a second gas and transport it to the second gas chamber 122.

There may be multiple first air inlet lines 163, each connected to a different first gas source S1, and each first gas source S1 provides different types of first gas. By switching the valve, a specified type of first gas can be delivered to the first gas chamber 131 as required. Similarly, there may be multiple second air inlet lines 164, each connected to a different second gas source S2, and each second gas source S2 provides different types of second gas. By switching the valve, a specified type of second gas can be delivered to the second gas chamber 122 as required.

As shown in FIG. 1 and FIG. 2 , in addition, the photoelectrically assisted process chamber design further includes two transparent partitions 180 for sealing the top and bottom of the inner tube 130, so that the first gas chamber 131 is closed, and the first gas chamber 131 is connected to the first gas source S1 through a first air inlet pipe 163, so that the first gas can be filled in the first gas chamber 131. The two transparent partitions 180 can be directly combined with the top and bottom of the inner tube 130, or combined with the spacer 160 and the top cover 110, that is, the two transparent partitions 180 are respectively arranged at the central opening 161 and the window 114, and are respectively combined with the spacer 160 and the top cover 110 through the top and bottom of the inner tube 130, so as to seal the top and bottom of the inner tube 130. Specifically, the transparent partition 180 can be glass with a evaporated film on the surface of which a fluoride such as magnesium fluoride (MgF2) is evaporated. The evaporated film is mainly selected from materials that do not affect the penetration of ultraviolet light and have anti-reflection properties.

As shown in FIG. 1 , FIG. 2 and FIG. 4 , the induction coil 150 is surrounded by the outer tube 120 to provide the outer tube 120 with a magnetic flux that varies with time to induce an electric field. The second gas enters the second gas chamber 122 through the second air inlet pipe 164. The second gas chamber 122 is used for the second gas to flow, and the second gas is ionized by the electric field to generate plasma, and is released to the bottom of the top cover 110 through the vents 115.

The electric field causes the plasma to be generated by ionization, and the plasma is accelerated toward the bottom and released to the bottom of the top cover 110 through the vent hole 115. In a specific embodiment, the two-in-one photoelectrically assisted process chamber design further includes at least one coil bracket 170. The induction coil 150 is at least partially fixed to the coil bracket 170, and the coil bracket 170 is detachably fixed to the upper surface 111 of the top cover 110. The induction coil 150 is combined with the coil bracket 170 to form a detachable coil module. By removing and replacing the coil bracket 170, the induction coil 150 disposed around the outer tube 120 can be quickly replaced to generate different induced electric fields according to needs.

As shown in FIG5 , in addition, the photoelectrically assisted processing chamber design may further include an adapter ring 190. The bottom surface of the adapter ring 190 matches the top of the outer tube 120 and the inner tube 130, or matches the spacer 160, and is used to be directly or indirectly combined with the top of the outer tube 120 and the inner tube 130. The top surface of the adapter ring 190 matches the ultraviolet light source 140, so that the ultraviolet light source 140 can be combined with the top of the inner tube 130 through the adapter ring 190 and/or the spacer 160. As shown in FIG6 , specifically, let the inner diameter of the inner tube 130 be a, and the inner diameter of the outer tube 120 be b. The ratio of the inner diameter a of the inner tube to the inner diameter b of the outer tube is preferably between 0.1 and 0.6 (0.1＜a/b＜0.6), so as to obtain a better photoelectrically assisted process effect.

Referring to FIG. 1 , FIG. 2 , FIG. 7 and FIG. 8 , in addition, the photo-assisted process chamber design may further include a first shower head 210. The first shower head 210 is annular, combined with the lower surface 112 of the top cover plate 110, surrounding the window 114, and covering the vent hole 115 to form a plasma channel 210a, and the plasma channel 210a is also connected to the reaction space 200a of the lower chamber 200. As shown in FIG. 1 , the second gas is ionized by the electric field to generate plasma, which is accelerated toward the bottom, passes through the vent hole 115, and enters the plasma channel 210a. Through the dispersion of the first shower head 210, the plasma can be more evenly dispersed in the reaction space 200a of the lower chamber 200. The first shower head 210 can achieve an ion filtering effect by grounding or adjusting the plasma channel 210a so that only free ions pass through.

As shown in FIG. 1 and FIG. 2 , the top cover plate 110 includes a front driver pipeline 116, which connects the upper surface 111 and the lower surface 112. One end of the front driver pipeline 116 located on the upper surface 111 is connected to the front driver supply source S3, and one end of the front driver pipeline 116 located on the lower surface 112 is located outside the vent 115. In addition, the photo-assisted processing chamber design further includes a second sprinkler 220. The second sprinkler 220 is also annular, combined with the lower surface 112 of the top cover plate 110, and surrounds the first sprinkler 210. The second spray head 220 covers one end of the precursor pipeline 116 located on the lower surface 112 to form a precursor channel 220a. The precursor channel 220a is connected to the reaction space 200a of the lower chamber 200 and is used to evenly distribute the precursor into the reaction space 200a.

The first spray head 210 and the second spray head 220 respectively provide a plasma channel 210a and a pre-driver channel 220a which are isolated from each other, so as to avoid the problem that the pre-driver contacts the plasma early and deposits, thereby blocking the spray head. As shown in FIG6 , specifically, the outer diameter of the first spray head 210 is c, and the outer diameter of the second spray head 220 is d. The preferred ratio between the outer diameter c of the first spray head 210 and the outer diameter d of the second spray head 220 is between 0.3 and 0.9 (0.3＜c/d＜0.9).

As shown in FIG. 2 , the photo-assisted process chamber design further includes a wafer carrier 230, which is located in the reaction space 200a of the lower chamber 200, and the wafer carrier 230 is disposed corresponding to the lower surface 112 of the top cover 110. The wafer carrier 230 includes a wafer carrier plate 232 and a linear driver 234. The top surface of the wafer carrier plate 232 faces the lower surface 112 of the top cover 110, and the top surface of the wafer carrier plate 232 is used to support a wafer so that the precursor is attached to the surface of the wafer and assisted by the excitation light and plasma to form a good atomic layer bond. In addition, the wafer carrier 232 can be connected to a bias power supply 240, and the bias power supply 240 is used to apply a bias current in the form of radio frequency to the wafer carrier 232 to generate an electric field to attract plasma or precursors and enhance the deposition effect on the wafer surface. The linear driver 234 is connected to the bottom surface of the wafer carrier 232 to drive the wafer carrier 232 to move up and down linearly to approach or move away from the top cover 110. In addition, the lower chamber 200 can also include a baffle 202 extending in the reaction space 200a and arranged around the wafer carrier 232. In addition, a heater 236, such as an electric heating tube, may be disposed inside the wafer carrier 230 to heat the wafer so as to maintain the temperature at a temperature required for the deposition reaction.

Based on the above two-in-one photoelectrically assisted process chamber design, the present invention proposes a UV-assisted and plasma-enhanced process method.

As shown in FIG. 2 and FIG. 9 , the process method first provides a lower chamber 200, as shown in step S110. The lower chamber 200 has a reaction space 200a, and a chamber opening 201 is opened at the top of the lower chamber 200, and the chamber opening 201 is connected to the reaction space 200a.

As shown in FIG. 1 , FIG. 2 and FIG. 9 , a top cover plate 110 is provided, and the chamber opening 201 is sealed by the top cover plate 110, as shown in step S120. The top cover plate 110 has an upper surface 111 and a lower surface 112, and the lower surface 112 of the top cover plate 110 faces the reaction space 200a. The top cover plate 110 further has a window 114 and a plurality of vents 115 respectively connecting the upper surface 111 and the lower surface 112, and the vents 115 are arranged around the window 114. In a specific embodiment, the window 114 and the plurality of vents 115 are located in the setting groove 113.

As shown in FIG. 1 , FIG. 2 and FIG. 9 , an outer tube 120 and an inner tube 130 are then provided, so that the inner tube 130 is located in the outer tube 120, and the bottom end of the outer tube 120 covers the window 114 and the vents 115, and the bottom end of the inner tube 130 is connected to the window 114, as shown in step S130. A first gas chamber 131 is formed inside the inner tube 130, and the first gas chamber 131 is connected to the window 114; a second gas chamber 122 is formed between the outer tube 120 and the inner tube 130, and the second gas chamber 122 is connected to the vents 115.

As shown in Figures 1, 2 and 9, an ultraviolet light source 140 is disposed at the top of the inner tube 130, as shown in step S140. The ultraviolet light source 140 is used to emit ultraviolet light to the first gas chamber 131 to excite a first gas entering the first gas chamber 131 into an excited state to generate excitation light.

As shown in Fig. 1, Fig. 2 and Fig. 9, an induction coil 150 is disposed around the outer tube 120, as shown in step S150. The induction coil 150 is used to provide the outer tube 120 with a magnetic flux that varies with time to induce an electric field so that a second gas is ionized to generate plasma.

As shown in FIG. 1 , FIG. 2 and FIG. 10 , a first gas is introduced into the first gas chamber 131 , and a second gas is introduced into the second gas chamber 122 , as shown in step S160 .

As shown in FIG. 1 , FIG. 2 and FIG. 10 , the ultraviolet light source 140 and the induction coil 150 may be selectively activated to emit excitation light and plasma through the lower surface 112 of the top cover plate 110 , as shown in step S170 .

Referring to FIG. 2 , the process method further includes providing a wafer carrier 230, which is located in the reaction space 200a of the lower chamber 200, and the wafer carrier 230 is arranged corresponding to the lower surface 112 of the top cover 110. The wafer carrier 230 includes a wafer carrier plate 232 and a linear actuator 234, the top surface of the wafer carrier plate 232 faces the lower surface 112 of the top cover 110, and the top surface of the wafer carrier plate 232 is used to support a wafer. The linear actuator 234 is connected to the bottom surface of the wafer carrier plate 232 to drive the wafer carrier plate 232 to move up and down linearly to approach or move away from the top cover 110. The wafer carrier plate 232 may be further connected to a bias power source 240, and the bias power source 240 is used to apply a bias current in the form of a radio frequency to the wafer carrier plate 232 to generate an electric field to attract plasma or precursors and enhance the deposition effect on the wafer surface.

1, 2, 7 and 8, the process method further includes providing a first spray head 210, which is combined with the lower surface 112 of the top cover plate 110, surrounds the window 114, and covers the vent hole 115 to form a plasma channel 210a, and the plasma channel 210a is also connected to the reaction space 200a of the lower chamber 200. The first spray head 210 is used to evenly disperse plasma into the reaction space 200a of the lower chamber 200. The process method further includes providing a second spray head 220, which is combined with the lower surface 112 of the top cover plate 110 and covers an end of a precursor pipeline 116 located on the lower surface 112 to form a precursor channel 220a. The precursor channel 220a is connected to the reaction space 200a of the lower chamber 200 for uniformly distributing the precursor.

As shown in FIGS. 1 , 2 , 3 and 4 , the step of disposing the ultraviolet light source 140 at the top of the inner tube 130 may further include disposing a spacer 160 connected to the top of the outer tube 120 and the inner tube 130, and combining the ultraviolet light source 140 with the spacer 160. As shown in the figure, the spacer 160 has a central opening 161 and an outer cavity 162, the central opening 161 is connected to the first gas chamber 131, and the outer cavity 162 is connected to the second gas chamber 122.

As shown in FIG. 3 and FIG. 4 , in addition, in a specific embodiment, the manufacturing method further includes providing at least one first air inlet pipe 163 in the partition 160. The first air inlet pipe 163 extends from the outer side of the partition 160 to the central opening 161, and is used to receive a first gas and transport it to the first gas chamber 131. The partition 160 also includes at least one second air inlet pipe 164. The second air inlet pipe 164 extends from the outer side of the partition 160 into the outer cavity 162, and is used to receive a second gas and transport it to the second gas chamber 122.

In addition, as shown in FIG. 1 to FIG. 5 , in the step S120 of setting the outer tube 120 and the inner tube 130 , two transparent partitions 180 are further set to seal the top and bottom of the inner tube 130 so that the first gas chamber 131 is closed.

As shown in FIG. 1 and FIG. 2 , the step of setting the induction coil 150 around the outer tube 120 further includes providing a coil bracket 170 to fix the induction coil 150 on the coil bracket 170 , and detachably fixing the coil bracket 170 on the upper surface 111 of the top cover 110 .

As shown in Figures 1, 2 and 5, in addition, before the ultraviolet light source 140 is set, an adapter ring 190 is provided, which is combined with the ultraviolet light source 140 and combined with the top ends of the outer tube 120 and the inner tube 130, so that the ultraviolet light source 140 can be combined with the top end of the inner tube 130 through the adapter ring 190 and/or the spacer 160.

Based on the above two-in-one photo-assisted process chamber design and the process method of UV-assisted and plasma-enhanced, the functions of UV-assisted and plasma-enhanced can be combined in a single design. A single design can use UV-assisted and plasma-enhanced at the same time, or can choose to implement either UV-assisted or plasma-enhanced, but there is no need to transfer wafers between different equipment, which can effectively improve the efficiency of the ALD/ALE process.

110: top cover plate 111: upper surface 112: lower surface 113: setting groove 114: window 115: vent hole 116: front drive pipeline 120: outer tube 122: second gas chamber 130: inner tube 131: first gas chamber 140: ultraviolet light source 150: sensing coil 160: spacer 161: central opening 162: outer cavity 163: first air inlet pipeline 164: second air inlet pipeline 170: coil support 180: transparent partition 190: adapter ring 200: lower cavity 200a: reaction space 201: cavity opening 202: stopper 210: first nozzle 210a: plasma channel 220: second nozzle 220a: front drive channel 230: wafer carrier 232: wafer carrier plate 234: linear drive 236: heater 240: bias power supply a: inner diameter of inner tube b: inner diameter of outer tube c: outer diameter of first nozzle d: outer diameter of second nozzle S110~S160: steps

FIG. 1 is a cross-sectional exploded view of a two-in-one photoelectrically assisted process chamber design in an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a two-in-one photo-assisted process chamber design in an embodiment of the present invention.

FIG. 3 and FIG. 4 are cross-sectional views of some components in a two-in-one photoelectrically assisted process chamber design according to an embodiment of the present invention.

FIG. 5 is a cross-sectional exploded view of some components in a two-in-one photoelectrically assisted process chamber design according to an embodiment of the present invention.

FIG. 6 is another cross-sectional view of the two-in-one photoelectrically assisted process chamber design in an embodiment of the present invention.

FIG. 7 is a three-dimensional diagram of the top cover plate, the first sprinkler head and the second sprinkler head in an embodiment of the present invention.

FIG8 is a three-dimensional diagram of the first sprinkler and the second sprinkler in an embodiment of the present invention.

FIG. 9 and FIG. 10 are flow charts of the UV-assisted and plasma-enhanced process method of the present invention.

without

S110~S160: Steps

Claims (10)

A process method for ultraviolet light-assisted and plasma-enhanced processing includes: providing a lower cavity; wherein the lower cavity has a reaction space, and a cavity opening is opened at the top of the lower cavity; providing a top cover plate; wherein the top cover plate has an upper surface and a lower surface, and the top cover plate further has a window and a plurality of vents, respectively connecting the upper surface and the lower surface, and the vents are arranged around the window; the cavity opening is closed with the top cover plate, and the lower surface is directed toward the reaction space to form a reaction cavity; an outer tube and an inner tube are arranged, the inner tube is located in the outer tube, and the bottom end of the outer tube covers the window and the vents The inner tube body is provided with a first gas chamber, and the first gas chamber is connected to the window; a second gas chamber is formed between the outer tube body and the inner tube body, and the second gas chamber is connected to the vents; an ultraviolet light source is arranged at the top of the inner tube body to emit ultraviolet light to the first gas chamber; an induction coil is arranged around the outer tube body to provide the outer tube body with a magnetic flux that changes with time to induce an electric field; a first gas is introduced into the first gas chamber, and a second gas is introduced into the second gas chamber; and the ultraviolet light source and/or the induction coil are activated. The UV-assisted and plasma-enhanced process method as described in claim 1 further includes providing a wafer carrier, which is located in the reaction space of the lower chamber, and the wafer carrier is arranged corresponding to the lower surface of the top cover; wherein the wafer carrier includes a wafer carrier plate and a linear driver, the top surface of the wafer carrier plate faces the lower surface of the top cover plate, and the linear driver is connected to the bottom surface of the wafer carrier plate to drive the wafer carrier plate to move up and down linearly. The UV-assisted and plasma-enhanced process method as described in claim 1 further includes providing a first spray head, which is combined with the lower surface of the top cover plate and covers the vents. The UV-assisted and plasma-enhanced process method as described in claim 3 further includes providing a second spray head, which is combined with the lower surface of the top cover plate and covers an end of a front drive pipeline located on the lower surface. A UV-assisted and plasma-enhanced process method as described in claim 4, wherein the ratio between the outer diameter of the first nozzle and the outer diameter of the second nozzle is between 0.3 and 0.9. The UV-assisted and plasma-enhanced process method as described in claim 1, wherein the ratio of the inner diameter of the inner tube to the inner diameter of the outer tube is between 0.1 and 0.6. The process method of ultraviolet light assisted and plasma enhanced as described in claim 1, wherein the step of setting the ultraviolet light source at the top end of the inner tube further includes setting a spacer connected to the outer tube and the top end of the inner tube, and combining the ultraviolet light source with the spacer; wherein the spacer has a central opening and an outer cavity, the central opening is connected to the first gas chamber, and the outer cavity is connected to the second gas chamber. The UV-assisted and plasma-enhanced process method as described in claim 7 further includes: at least one first air inlet pipe is provided on the spacer, extending from the outer side of the spacer to the central opening, for receiving the first gas and delivering it to the first gas chamber; and at least one second air inlet pipe is provided on the spacer, extending from the outer side of the spacer to the outer cavity, for receiving the second gas and delivering it to the second gas chamber. As described in claim 1, the process method of ultraviolet light assisted and plasma enhanced, wherein the step of setting the outer tube and the inner tube further includes setting two transparent partitions to seal the top and bottom of the inner tube, so that the first gas chamber is closed. As described in claim 1, the UV-assisted and plasma-enhanced process method further includes providing an adapter ring before setting the UV light source, which is coupled to the UV light source and to the outer tube and the top end of the inner tube, so that the UV light source is coupled to the top end of the inner tube through the adapter ring.

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