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TWM649268U - Heat dissipation apparatus - Google Patents

Heat dissipation apparatus Download PDF

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Publication number
TWM649268U
TWM649268U TW112206656U TW112206656U TWM649268U TW M649268 U TWM649268 U TW M649268U TW 112206656 U TW112206656 U TW 112206656U TW 112206656 U TW112206656 U TW 112206656U TW M649268 U TWM649268 U TW M649268U
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Taiwan
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heat dissipation
contact surface
phase change
retaining wall
heat
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TW112206656U
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Chinese (zh)
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張名彰
賴晨暉
張文泰
林苔瑄
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思鉑材料有限公司
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Publication of TWM649268U publication Critical patent/TWM649268U/en

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Abstract

本創作的散熱裝置包括一基板、一發熱源、一散熱模組及一導熱層。發熱源連接基板。導熱層連接散熱模組及發熱源,且包括一相變化導熱單元及一圍牆結構。相變化導熱單元分布在發熱源上。圍牆結構自相變化導熱單元向外延伸,以包覆相變化導熱單元,圍牆結構位在基板及散熱模組之間。 The heat dissipation device of this invention includes a substrate, a heat source, a heat dissipation module and a thermal conductive layer. The heat source is connected to the substrate. The thermal conductive layer connects the heat dissipation module and the heat source, and includes a phase change thermal conductive unit and a surrounding wall structure. Phase change thermal conduction units are distributed on the heat source. The enclosure structure extends outward from the phase change heat conduction unit to cover the phase change heat conduction unit, and the enclosure wall structure is located between the substrate and the heat dissipation module.

Description

散熱裝置 Cooling device

本創作與散熱裝置有關,特別是指一種使用相變化材料的散熱裝置。 This creation relates to heat dissipation devices, specifically a heat dissipation device using phase change materials.

電子裝置的處理器或電子元件運作產生的熱能會隨著運算速度、效能的增加,熱能累積導致處理器或電子元件的溫度升高,這不僅會影響處理器或電子元件的處理能力也會影響使用壽命。 The heat energy generated by the operation of the processor or electronic components of electronic devices will increase with the increase in computing speed and performance. The accumulation of heat energy will cause the temperature of the processor or electronic components to rise. This will not only affect the processing capabilities of the processor or electronic components, but also affect the processing power of the processor or electronic components. service life.

再者,隨著電子裝置朝向更輕、薄、短、小的尺寸邁進,有效率地散熱方式已是目前重要的課題。液態金屬散熱膏的熱導係數優於傳統散熱膏,為了提升散熱效率,液態金屬散熱膏已被應用在散熱環境中,但是液態金屬散熱膏在液態時不易限制其流動,容易外溢至處理器或電子元件周圍環境中,導致周圍環境的電路發生短路。或者,如台灣第I698287號專利是藉由在限制元件的範圍內使電子元件表面先形成粗糙化表面後在塗佈液態金屬散熱膏來增加液態金屬散熱膏的均勻性,這種方式雖然可以改善塗佈的範圍及其均勻性,但在導(散)熱過程中,液態金屬仍會向外流動,而溢流到外部致使周圍環境的電路發生短路問題。 Furthermore, as electronic devices move towards lighter, thinner, shorter and smaller sizes, efficient heat dissipation methods have become an important issue at present. The thermal conductivity of liquid metal thermal paste is better than that of traditional thermal paste. In order to improve heat dissipation efficiency, liquid metal thermal paste has been used in heat dissipation environments. However, liquid metal thermal paste is not easy to restrict its flow when it is liquid, and it is easy to overflow to the processor or In the environment around electronic components, short circuits occur in the surrounding circuits. Alternatively, Taiwan Patent No. I698287 increases the uniformity of the liquid metal heat dissipation paste by first forming a roughened surface on the surface of the electronic component within the limited range of the component and then applying the liquid metal heat dissipation paste. Although this method can improve the uniformity of the liquid metal heat dissipation paste. However, during the heat conduction (dissipation) process, the liquid metal will still flow outward and overflow to the outside, causing short circuit problems in the surrounding circuits.

有鑑於上述缺失,本創作的散熱裝置的導熱層可以有效地限制相變化導電材料的流動,以避免導電材料溢流造成電路短路的問題。 In view of the above deficiencies, the thermal conductive layer of the heat dissipation device of the present invention can effectively restrict the flow of the phase change conductive material to avoid the problem of circuit short circuit caused by overflow of the conductive material.

為了達到上述目的,本創作的散熱裝置包括一基板、一發熱源、一散熱模組及一導熱層。發熱源連接基板。導熱層連接散熱模組及發熱源,且包括一相變化導熱單元及一圍牆結構。相變化導熱單元分布在發熱源上。圍牆結構自相變化導熱單元向外延伸,以包覆相變化導熱單元,圍牆結構位在基板及散熱模組之間。 In order to achieve the above purpose, the heat dissipation device of the present invention includes a substrate, a heat source, a heat dissipation module and a thermal conductive layer. The heat source is connected to the substrate. The thermal conductive layer connects the heat dissipation module and the heat source, and includes a phase change thermal conductive unit and a surrounding wall structure. Phase change thermal conduction units are distributed on the heat source. The enclosure structure extends outward from the phase change heat conduction unit to cover the phase change heat conduction unit, and the enclosure wall structure is located between the substrate and the heat dissipation module.

如此,本創作的散熱裝置可以透過導熱層的圍牆結構來包覆相變化導熱單元,以限制液態導電材料溢流至圍牆結構外,並改善電路短路問題。 In this way, the heat dissipation device of this invention can cover the phase change thermal conductive unit through the wall structure of the thermal conductive layer to limit the overflow of the liquid conductive material to the outside of the wall structure and improve the short circuit problem of the circuit.

有關本創作所提供之散熱裝置的詳細構造或特點,將於後續的實施方式詳細說明中予以描述。然而,本領域技術人員應能瞭解,該詳細說明以及實施本創作所列舉的特定實施例,僅適用於說明本創作,並非用以限制本創作的申請專利範圍。 The detailed structure or features of the heat dissipation device provided by the present invention will be described in the subsequent detailed description of the implementation. However, those skilled in the art should understand that the detailed description and the specific examples listed for implementing the present invention are only suitable for illustrating the present invention and are not intended to limit the patentable scope of the present invention.

10:散熱裝置 10: Cooling device

20:基板 20:Substrate

30:發熱源 30: Heat source

40:散熱模組 40: Cooling module

50:導熱層 50:Thermal conductive layer

51:相變化導熱單元 51: Phase change thermal conduction unit

511:相變化導電材料 511: Phase change conductive materials

513:絕緣導熱材料 513: Insulating and thermally conductive materials

53:圍牆結構 53:Wall structure

531:第一接觸面 531: First contact surface

533:第二接觸面 533: Second contact surface

535:內擋牆 535:Inner retaining wall

537:外擋牆 537:Exterior retaining wall

圖1是本創作的散熱裝置的實施例的示意圖。 Figure 1 is a schematic diagram of an embodiment of the heat dissipation device of the present invention.

圖2是圖1中散熱模組與發熱源壓合在一起的側視,且導熱層以剖視呈現的實施例的示意圖。 FIG. 2 is a side view of the heat dissipation module and the heat source in FIG. 1 that are pressed together, and a schematic diagram of the embodiment in which the thermal conductive layer is presented in cross-section.

圖3是圖1中散熱模組與發熱源壓合在一起的側視,且導熱層以剖視呈現的另一實施例的示意圖。 FIG. 3 is a side view of the heat dissipation module and the heat source in FIG. 1 that are pressed together, and a schematic diagram of another embodiment in which the thermal conductive layer is presented in cross-section.

申請人首先在此說明,於整篇說明書中,包括以下介紹的實施例以及申請專利範圍的請求項中,有關方向性的名詞皆以圖式中的方向為基準。其次,在以下將要介紹之實施例以及圖式中,相同之元件標號,代表相同或近似之元件或其結構特徵。 The applicant would like to first explain that in the entire description, including the embodiments introduced below and the claims in the patent application scope, terms related to directionality are based on the direction in the drawings. Secondly, in the embodiments and drawings to be introduced below, the same component numbers represent the same or similar components or structural features.

如圖1及圖2所示,本創作的散熱裝置10包括一基板20、一發熱源30、一散熱模組40及一導熱層50。發熱源30連接基板20,基板20可以有其他電子元件,例如被動元件或主動元件,發熱源30例如晶片(chip)。散熱模組40可以是散熱鰭片、散熱蓋、散熱板、散熱管等形式或結合主動散熱裝置,例如水冷式、氣冷式散熱。導熱蓋是蓋住發熱源30,且導熱蓋上可以結合另一散熱模組。導熱層50連接散熱模組40及發熱源30。導熱層50包括一相變化導熱單元51及一圍牆結構53。相變化導熱單51元包括混合在一起的相變化導電材料511及絕緣導熱材料513。 As shown in FIGS. 1 and 2 , the heat dissipation device 10 of the present invention includes a substrate 20 , a heat source 30 , a heat dissipation module 40 and a thermal conductive layer 50 . The heat source 30 is connected to the substrate 20. The substrate 20 may have other electronic components, such as passive components or active components, and the heat source 30 may be a chip. The heat dissipation module 40 may be in the form of heat dissipation fins, heat dissipation covers, heat dissipation plates, heat dissipation pipes, etc. or may be combined with an active heat dissipation device, such as water-cooling or air-cooling heat dissipation. The thermal conductive cover covers the heat source 30, and another heat dissipation module can be combined with the thermal conductive cover. The thermal conductive layer 50 connects the heat dissipation module 40 and the heat source 30 . The thermal conductive layer 50 includes a phase change thermal conductive unit 51 and a surrounding wall structure 53 . The phase change thermal conductive unit 51 includes phase change conductive material 511 and insulating thermal conductive material 513 mixed together.

導熱層50的原材料可以是膏狀、泥狀、膠狀、片狀、液狀等型態,導熱層50的原材料也稱為填縫劑、散熱材料或導熱材料等,而可透過塗佈、點膠、印刷、置放等方式填充在發熱源30上,或是將散熱膠片貼合在發熱源30上,接著將散熱模組40與發熱源30壓合,而對散熱膏或散熱膠片擠壓,讓散熱膏或散熱膠片順應散熱模組40及發熱源30的表面起伏變化而相互結合。 The raw material of the thermal conductive layer 50 can be in the form of paste, mud, gel, sheet, liquid, etc. The raw material of the thermal conductive layer 50 is also called caulking agent, heat dissipation material or thermal conductive material, etc., and can be coated, Fill the heat source 30 by dispensing, printing, placing, etc., or attach the heat dissipation film to the heat source 30, then press the heat dissipation module 40 and the heat source 30, and squeeze out the heat dissipation paste or heat dissipation film. Press, so that the heat dissipation paste or heat dissipation film conforms to the surface fluctuations of the heat dissipation module 40 and the heat source 30 and combines with each other.

散熱膏、散熱膠或散熱材料包括低密度的絕緣導熱材料513及高密度的相變化導電材料511。因此,無論如何被擠壓低密度的絕緣導熱材料513都可以包圍相變化導電材料511,隨後,導熱層50外圍的低密度的絕緣導熱材料 513可形成圍牆結構53,而包圍內部的混合材料(即絕緣導熱材料513及相變化導電材料511)。 Thermal paste, heat dissipation glue or heat dissipation material includes low-density insulating and thermally conductive material 513 and high-density phase change conductive material 511 . Therefore, the low-density insulating and thermally conductive material 513 can surround the phase change conductive material 511 no matter how it is extruded. Subsequently, the low-density insulating and thermally conductive material on the periphery of the thermally conductive layer 50 513 can form an enclosure structure 53 to surround the internal mixed materials (ie, the insulating and thermally conductive material 513 and the phase change conductive material 511).

由於,導熱層50是受到散熱模組40的擠壓,且外圍形成圍牆結構53,因此,圍牆結構53是不規則圖案。其他實施例中,導熱層50被限制在特定的框架內,圍牆結構53才會受限於框架的圖案,例如導熱層50在中空矩形框架內,被擠壓的導熱層50圖案就會近似矩形框架。 Since the thermal conductive layer 50 is extruded by the heat dissipation module 40 and the surrounding wall structure 53 is formed on the periphery, the surrounding wall structure 53 has an irregular pattern. In other embodiments, the thermal conductive layer 50 is limited to a specific frame, and the wall structure 53 is limited to the pattern of the frame. For example, if the thermal conductive layer 50 is within a hollow rectangular frame, the pattern of the extruded thermal conductive layer 50 will be approximately rectangular. frame.

絕緣導熱材料513的密度較相變化導電材料511的密度低。相變化導電材料511的內聚力較佳。絕緣導熱材料513包括基礎油及添加劑,基礎油可以是合成油、半合成油、礦物油等各油脂類,例如二甲基矽油、苯基矽油、乙基矽油、羥基矽油、氨基矽油、含氫矽油、乙烯基矽油、改性矽油、環狀二甲基矽油或苯甲基矽油等的其中至少一者。添加劑例如二甲基二氯矽烷、丙烯矽烷、苯代三氯矽烷、甲基丙烯矽烷、苯基三甲氧基矽烷、環氧矽烷、癸基三甲氧基矽烷、三甲氧基矽烷、三氟丙基三甲氧基矽烷、乙烯基三氯矽烷、六甲基二矽氮烷、甲基二乙氧基矽烷、四乙氧基矽烷、苯乙烯基三甲氧基矽烷、甲基三氯矽烷、3-甲基丙烯醯氧丙基、N-乙烯基芐基-2-氨乙基-3-氨丙基三甲氧基矽烷鹽酸鹽、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-異氰酸酯丙基三乙氧基矽烷等地其中至少一者。相變化導電材料511包括金、銀、銅、鎂、鉑、鎵、銦、錳、錫、鉛、鋅、鉍、鈀等金屬或合金成分的至少一者。因為,絕緣導熱材料513的密度較相變化導電材料511的密度低,因此,擠壓過程中相變化導電材料511都會被絕緣導熱材料513包覆,並推擠絕緣導熱材料513。 The density of the insulating and thermally conductive material 513 is lower than the density of the phase change conductive material 511 . The phase change conductive material 511 has better cohesion. The insulating and thermally conductive material 513 includes base oil and additives. The base oil can be synthetic oil, semi-synthetic oil, mineral oil and other greases, such as dimethyl silicone oil, phenyl silicone oil, ethyl silicone oil, hydroxyl silicone oil, amino silicone oil, hydrogenated silicone oil, etc. At least one of silicone oil, vinyl silicone oil, modified silicone oil, cyclic dimethyl silicone oil or benzyl silicone oil. Additives such as dimethyldichlorosilane, propylene silane, phenyltrichlorosilane, methacrylsilane, phenyltrimethoxysilane, epoxysilane, decyltrimethoxysilane, trimethoxysilane, trifluoropropyl Trimethoxysilane, vinyltrichlorosilane, hexamethyldisilazane, methyldiethoxysilane, tetraethoxysilane, styryltrimethoxysilane, methyltrichlorosilane, 3-methyl Acryloxypropyl, N-vinylbenzyl-2-aminoethyl-3-aminopropyltrimethoxysilane hydrochloride, 3-ureidopropyltriethoxysilane, 3-mercaptopropyl At least one of trimethoxysilane, 3-isocyanatepropyltriethoxysilane, etc. The phase change conductive material 511 includes at least one metal or alloy component such as gold, silver, copper, magnesium, platinum, gallium, indium, manganese, tin, lead, zinc, bismuth, and palladium. Because the density of the insulating and thermally conductive material 513 is lower than that of the phase change conductive material 511 , the phase change conductive material 511 will be covered by the insulating and thermally conductive material 513 during the extrusion process and push the insulating and thermally conductive material 513 .

相變化導熱單元51分佈在發熱源30上,相變化導電材料511屬於高熔化熱的成分或物質,以藉由被加熱在特定的溫度參數時發生相變化(例如熔 化或固化),本實施例中相變化是被加熱後使固態轉變為液態,如此,藉由相變化的狀態改變達到吸收或釋放熱能。 The phase change thermal conductive units 51 are distributed on the heat source 30. The phase change conductive material 511 is a component or substance with high melting heat, so that a phase change occurs when heated at a specific temperature parameter (such as melting). (transformation or solidification). In this embodiment, the phase change is to change the solid state into a liquid state after being heated. In this way, the state change of the phase change is used to absorb or release thermal energy.

圍牆結構53的成分是相變化導熱單元51中的部分絕緣導熱材料513固化的結果。圍牆結構53自相變化導熱單元51向外延伸,以包覆相變化導熱單元51,如此,相變化導熱單元51被限制在圍牆結構53內,以改善相變化導熱單元51中相變化導電材料511在液態時外溢至圍牆結構53外。 The composition of the enclosure structure 53 is the result of solidification of part of the insulating and thermally conductive material 513 in the phase change thermally conductive unit 51 . The enclosure structure 53 extends outward from the phase change heat conduction unit 51 to cover the phase change heat conduction unit 51. In this way, the phase change heat conduction unit 51 is limited within the enclosure structure 53 to improve the phase change conductive material 511 in the phase change heat conduction unit 51. In the liquid state, it overflows outside the enclosure structure 53 .

如圖2所示,圍牆結構53包括一第一接觸面531、一第二接觸面533、一內擋牆535及一外擋牆537。第一接觸面531接觸散熱模組40,且順應散熱模組40的表面起伏變化。第二接觸面533接觸基板20,且順應基板20及發熱源30的表面起伏變化。其中,第一接觸面531及第二接觸面533大致是不會暴露在環境中。內擋牆535連接第一接觸面531及第二接觸面533的周圍,且包圍相變化導熱單元51,以阻擋液態的相變化導熱單元51的相變化導電材料511外洩。外擋牆537連接第一接觸面531及第二接觸面533的周圍,且包圍內擋牆535。 As shown in FIG. 2 , the enclosure structure 53 includes a first contact surface 531 , a second contact surface 533 , an inner retaining wall 535 and an outer retaining wall 537 . The first contact surface 531 contacts the heat dissipation module 40 and conforms to the surface undulations of the heat dissipation module 40 . The second contact surface 533 contacts the substrate 20 and conforms to the surface undulations of the substrate 20 and the heat source 30 . Among them, the first contact surface 531 and the second contact surface 533 are generally not exposed to the environment. The inner retaining wall 535 connects the first contact surface 531 and the second contact surface 533 and surrounds the phase change thermal conduction unit 51 to prevent the phase change conductive material 511 of the liquid phase change thermal conduction unit 51 from leaking out. The outer retaining wall 537 connects the first contact surface 531 and the second contact surface 533 and surrounds the inner retaining wall 535 .

本實施例中,圍牆結構53是雙層的,即外擋牆537及內擋牆535。外擋牆537是暴露在散熱模組40及基板20之間的間隙,在常溫環境中接觸空氣的作用而形成近似薄膜的牆。內擋牆535則是在接收到熱能(即被加熱)後固化成形,熱能可以是外部加熱,例如透過加熱腔或藉由發熱源30運作時產生的熱能,以使導熱層50形成圍牆結構53。當圍牆結構53成型後,圍牆結構內部的相變化導熱單元51可以維持膏狀及導熱功能,以允許相變化導電材料511進行相變。 In this embodiment, the wall structure 53 is double-layered, namely an outer retaining wall 537 and an inner retaining wall 535 . The outer retaining wall 537 is exposed in the gap between the heat dissipation module 40 and the substrate 20 and forms a wall that is approximately a thin film due to contact with air in a normal temperature environment. The inner retaining wall 535 is solidified and formed after receiving thermal energy (that is, being heated). The thermal energy can be external heating, such as through a heating cavity or the thermal energy generated when the heat source 30 operates, so that the thermal conductive layer 50 forms the enclosure structure 53 . After the wall structure 53 is formed, the phase change thermal conductive unit 51 inside the wall structure can maintain the paste-like and thermal conductive functions to allow the phase change conductive material 511 to undergo phase change.

如圖3所示,發熱源30包括一發熱面31,發熱面31背對基板20。圍牆結構53連接發熱源30的發熱面31及散熱模組40。第二接觸面533是接觸發熱源30的發熱面31,且順應發熱面31的表面起伏。 As shown in FIG. 3 , the heat source 30 includes a heating surface 31 , and the heating surface 31 faces away from the substrate 20 . The surrounding wall structure 53 connects the heating surface 31 of the heat source 30 and the heat dissipation module 40 . The second contact surface 533 is in contact with the heating surface 31 of the heat source 30 and conforms to the surface undulations of the heating surface 31 .

如此,雙層的圍牆結構53可以讓導熱層50的結構更為穩定,來避免液態的相變化導熱單元51的相變化導電材料511洩漏或溢流至圍牆結構53外。再者,發熱源30與散熱模組40與導熱層50的緊密接觸,且相變化導熱單元51中相變化導電材料511的熱傳導能力優於絕緣導熱材料513,因此,當相變化導電材料511接受熱能而變相後,使得導熱層50能更有效率地將發熱源30的熱能傳導至散熱模組40。 In this way, the double-layered wall structure 53 can make the structure of the thermal conductive layer 50 more stable to prevent the liquid phase change conductive material 511 of the phase change thermal conductive unit 51 from leaking or overflowing outside the wall structure 53 . Furthermore, the heat source 30 and the heat dissipation module 40 are in close contact with the thermal conductive layer 50, and the thermal conductivity of the phase change conductive material 511 in the phase change thermal conduction unit 51 is better than that of the insulating thermal conductive material 513. Therefore, when the phase change conductive material 511 accepts After the thermal energy is transformed into phases, the thermal conductive layer 50 can conduct the thermal energy of the heat source 30 to the heat dissipation module 40 more efficiently.

本創作的散熱裝置可以透過導熱層的形成將發熱源的熱能傳導至散熱模組,且透過導熱層中導熱效果較佳的相變化導電材料來優化熱傳導能力,並以導熱層本身形成的圍牆結構包圍相變化導電材料,如此,當相變化導電材料相變為液態後,液態的相變化導電材料受到圍牆結構限制而不會外洩至圍牆結構外。 The heat dissipation device of this invention can conduct heat energy from the heat source to the heat dissipation module through the formation of a thermal conductive layer, and optimize the thermal conductivity through phase change conductive materials with better thermal conductivity in the thermal conductive layer, and use the wall structure formed by the thermal conductive layer itself Surround the phase change conductive material, so that when the phase change conductive material changes to a liquid state, the liquid phase change conductive material is restricted by the wall structure and will not leak outside the wall structure.

最後,本創作於前揭實施例中所揭露的構成元件,僅為舉例說明,並非用以限制本創作之範圍,其他等效元件的替代或變化,亦應為本創作之申請專利範圍所涵蓋。 Finally, the structural elements disclosed in the foregoing embodiments of this invention are only examples and are not intended to limit the scope of this invention. Substitutions or changes of other equivalent elements should also be covered by the patentable scope of this invention. .

10:散熱裝置 10: Cooling device

20:基板 20:Substrate

30:發熱源 30: Heat source

40:散熱模組 40: Cooling module

50:導熱層 50:Thermal conductive layer

Claims (8)

一種散熱裝置,包括: 一基板; 一發熱源,連接該基板; 一散熱模組;及 一導熱層,連接該散熱模組及該發熱源,且包括一相變化導熱單元及一圍牆結構,該相變化導熱單元分佈在該發熱源上,該圍牆結構自該相變化導熱單元向外延伸,以包覆該相變化導熱單元,該圍牆結構位在該基板及該散熱模組之間。 A heat dissipation device including: a substrate; A heat source is connected to the substrate; a heat dissipation module; and A heat conductive layer connects the heat dissipation module and the heat source, and includes a phase change heat conduction unit and a wall structure. The phase change heat conduction unit is distributed on the heat source. The wall structure extends outward from the phase change heat conduction unit. , to cover the phase change thermal conduction unit, and the enclosure structure is located between the substrate and the heat dissipation module. 如請求項1所述的散熱裝置,其中,該圍牆結構包括一第一接觸面、一第二接觸面、一外擋牆及一內擋牆,該第一接觸面接觸該散熱模組,該第二接觸面接觸該基板,該內擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該相變化導熱單元,該外擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該內擋牆。The heat dissipation device of claim 1, wherein the enclosure structure includes a first contact surface, a second contact surface, an outer retaining wall and an inner retaining wall, the first contact surface contacts the heat dissipation module, and the The second contact surface contacts the substrate, the inner retaining wall connects the first contact surface and the second contact surface, and surrounds the phase change thermal conduction unit, and the outer retaining wall connects the first contact surface and the second contact surface around the surface and surrounding the internal retaining wall. 如請求項1所述的散熱裝置,其中,該發熱源包括一發熱面,該發熱面背對該基板,該圍牆結構包括一第一接觸面、一第二接觸面、一外擋牆及一內擋牆,該第一接觸面接觸該散熱模組,該第二接觸面接觸該發熱面,該內擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該相變化導熱單元,該外擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該內擋牆。The heat dissipation device as claimed in claim 1, wherein the heat source includes a heating surface facing away from the substrate, and the surrounding wall structure includes a first contact surface, a second contact surface, an outer retaining wall and an Inner retaining wall, the first contact surface contacts the heat dissipation module, the second contact surface contacts the heating surface, the inner retaining wall connects the first contact surface and the periphery of the second contact surface, and surrounds the phase change heat conduction unit, the outer retaining wall connects the periphery of the first contact surface and the second contact surface, and surrounds the inner retaining wall. 如請求項2或3所述的散熱裝置,其中,該圍牆結構的內擋牆成形是透過熱能,該外擋牆的成形與接觸環境空氣有關。The heat dissipation device as claimed in claim 2 or 3, wherein the inner retaining wall of the enclosure structure is formed by the transmission of thermal energy, and the formation of the outer retaining wall is related to contact with ambient air. 如請求項1所述的散熱裝置,其中,該圍牆結構的內擋牆成形是透過熱能。The heat dissipation device as claimed in claim 1, wherein the inner retaining wall of the enclosure structure is shaped to transmit heat energy. 如請求項1所述的散熱裝置,其中,該圍牆結構的內擋牆及外擋牆形狀是不規則圖案。The heat dissipation device according to claim 1, wherein the shapes of the inner retaining wall and the outer retaining wall of the enclosure structure are irregular patterns. 如請求項1所述的散熱裝置,其中,該相變化導熱單元包括混合在一起的一相變化導電材料及一絕緣導熱材料,該相變化導電材料包括被加熱使固態轉變為液態。The heat dissipation device of claim 1, wherein the phase change thermally conductive unit includes a phase change conductive material and an insulating thermally conductive material mixed together, and the phase change conductive material is heated to convert a solid state into a liquid state. 如請求項7所述的散熱裝置,其中,該圍牆結構是部分該絕緣導熱材料固化的結果。The heat dissipation device as claimed in claim 7, wherein the wall structure is a result of partial curing of the insulating and thermally conductive material.
TW112206656U 2023-06-29 2023-06-29 Heat dissipation apparatus TWM649268U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI859950B (en) * 2023-06-29 2024-10-21 思鉑材料有限公司 Heat sink
TWI890394B (en) * 2024-04-01 2025-07-11 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI859950B (en) * 2023-06-29 2024-10-21 思鉑材料有限公司 Heat sink
TWI890394B (en) * 2024-04-01 2025-07-11 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof

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