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TWI859950B - Heat sink - Google Patents

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TWI859950B
TWI859950B TW112124315A TW112124315A TWI859950B TW I859950 B TWI859950 B TW I859950B TW 112124315 A TW112124315 A TW 112124315A TW 112124315 A TW112124315 A TW 112124315A TW I859950 B TWI859950 B TW I859950B
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heat
phase change
contact surface
heat dissipation
conductive material
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TW112124315A
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Chinese (zh)
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TW202502141A (en
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張名彰
賴晨暉
張文泰
林苔瑄
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思鉑材料有限公司
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Abstract

本發明的散熱裝置包括一基板、一發熱源、一散熱模組及一導熱層。發熱源連接基板。導熱層連接散熱模組及發熱源,且包括一相變化導熱單元及一圍牆結構。相變化導熱單元分布在發熱源上。圍牆結構自相變化導熱單元向外延伸,以包覆相變化導熱單元,圍牆結構位在基板及散熱模組之間。The heat dissipation device of the present invention includes a substrate, a heat source, a heat dissipation module and a heat conductive layer. The heat source is connected to the substrate. The heat conductive layer is connected to the heat dissipation module and the heat source, and includes a phase change heat conductive unit and a wall structure. The phase change heat conductive unit is distributed on the heat source. The wall structure extends outward from the phase change heat conductive unit to cover the phase change heat conductive unit, and the wall structure is located between the substrate and the heat dissipation module.

Description

散熱裝置Heat sink

本發明與散熱裝置有關,特別是指一種使用相變化材料的散熱裝置。 The present invention relates to a heat sink, and in particular to a heat sink using a phase change material.

電子裝置的處理器或電子元件運作產生的熱能會隨著運算速度、效能的增加,熱能累積導致處理器或電子元件的溫度升高,這不僅會影響處理器或電子元件的處理能力也會影響使用壽命。 The heat energy generated by the operation of the processor or electronic components of electronic devices will increase with the increase of computing speed and performance. The heat energy accumulation will cause the temperature of the processor or electronic components to rise, which will not only affect the processing capacity of the processor or electronic components but also affect the service life.

再者,隨著電子裝置朝向更輕、薄、短、小的尺寸邁進,有效率地散熱方式已是目前重要的課題。液態金屬散熱膏的熱導係數優於傳統散熱膏,為了提升散熱效率,液態金屬散熱膏已被應用在散熱環境中,但是液態金屬散熱膏在液態時不易限制其流動,容易外溢至處理器或電子元件周圍環境中,導致周圍環境的電路發生短路。或者,如台灣第I698287號專利是藉由在限制元件的範圍內使電子元件表面先形成粗糙化表面後在塗佈液態金屬散熱膏來增加液態金屬散熱膏的均勻性,這種方式雖然可以改善塗佈的範圍及其均勻性,但在導(散)熱過程中,液態金屬仍會向外流動,而溢流到外部致使周圍環境的電路發生短路問題。 Furthermore, as electronic devices move towards lighter, thinner, shorter and smaller sizes, efficient heat dissipation has become an important issue. Liquid metal thermal paste has a higher thermal conductivity than traditional thermal paste. In order to improve heat dissipation efficiency, liquid metal thermal paste has been used in heat dissipation environments. However, it is difficult to restrict the flow of liquid metal thermal paste when it is in liquid form, and it is easy to overflow into the environment around the processor or electronic components, causing short circuits in the surrounding circuits. Alternatively, as in Taiwan Patent No. I698287, the surface of the electronic component is roughened within the range of the restricted component before applying the liquid metal thermal paste to increase the uniformity of the liquid metal thermal paste. Although this method can improve the range and uniformity of the coating, the liquid metal will still flow outward during the heat conduction (dissipation) process and overflow to the outside, causing a short circuit problem in the surrounding circuit.

有鑑於上述缺失,本發明的散熱裝置的導熱層可以有效地限制相變化導電材料的流動,以避免導電材料溢流造成電路短路的問題。 In view of the above-mentioned deficiencies, the heat conductive layer of the heat dissipation device of the present invention can effectively limit the flow of the phase change conductive material to avoid the problem of circuit short circuit caused by overflow of the conductive material.

為了達到上述目的,本發明的散熱裝置包括一基板、一發熱源、一散熱模組及一導熱層。發熱源連接基板。導熱層連接散熱模組及發熱源,且包括一相變化導熱單元及一圍牆結構。相變化導熱單元分布在發熱源上。圍牆結構自相變化導熱單元向外延伸,以包覆相變化導熱單元,圍牆結構位在基板及散熱模組之間。 In order to achieve the above-mentioned purpose, the heat dissipation device of the present invention includes a substrate, a heat source, a heat dissipation module and a heat conductive layer. The heat source is connected to the substrate. The heat conductive layer is connected to the heat dissipation module and the heat source, and includes a phase change heat conductive unit and a wall structure. The phase change heat conductive unit is distributed on the heat source. The wall structure extends outward from the phase change heat conductive unit to cover the phase change heat conductive unit, and the wall structure is located between the substrate and the heat dissipation module.

如此,本發明的散熱裝置可以透過導熱層的圍牆結構來包覆相變化導熱單元,以限制液態導電材料溢流至圍牆結構外,並改善電路短路問題。 In this way, the heat dissipation device of the present invention can enclose the phase change heat conducting unit through the wall structure of the heat conducting layer to limit the overflow of the liquid conductive material to the outside of the wall structure and improve the circuit short circuit problem.

有關本發明所提供之散熱裝置的詳細構造或特點,將於後續的實施方式詳細說明中予以描述。然而,本領域技術人員應能瞭解,該詳細說明以及實施本發明所列舉的特定實施例,僅適用於說明本發明,並非用以限制本發明的申請專利範圍。 The detailed structure or features of the heat dissipation device provided by the present invention will be described in the detailed description of the implementation method in the following. However, those skilled in the art should understand that the detailed description and the specific embodiments listed for implementing the present invention are only applicable to the description of the present invention and are not intended to limit the scope of the patent application of the present invention.

10:散熱裝置 10: Heat dissipation device

20:基板 20: Substrate

30:發熱源 30: Heat source

40:散熱模組 40: Heat dissipation module

50:導熱層 50: Thermal conductive layer

51:相變化導熱單元 51: Phase change heat conduction unit

511:相變化導電材料 511: Phase change conductive material

513:絕緣導熱材料 513: Insulation and thermal conductive materials

53:圍牆結構 53: Wall structure

531:第一接觸面 531: First contact surface

533:第二接觸面 533: Second contact surface

535:內擋牆 535: Internal retaining wall

537:外擋牆 537:External wall

圖1是本發明的散熱裝置的實施例的示意圖。 Figure 1 is a schematic diagram of an embodiment of the heat dissipation device of the present invention.

圖2是圖1中散熱模組與發熱源壓合在一起的側視,且導熱層以剖視呈現的實施例的示意圖。 FIG2 is a schematic diagram of an embodiment in which the heat dissipation module and the heat source are pressed together in a side view in FIG1 and the heat conductive layer is presented in a cross-sectional view.

圖3是圖1中散熱模組與發熱源壓合在一起的側視,且導熱層以剖視呈現的另一實施例的示意圖。 FIG3 is a schematic diagram of another embodiment in which the heat dissipation module and the heat source are pressed together in a side view in FIG1 and the heat conductive layer is presented in a cross-sectional view.

申請人首先在此說明,於整篇說明書中,包括以下介紹的實施例以及申請專利範圍的請求項中,有關方向性的名詞皆以圖式中的方向為基準。其次,在以下將要介紹之實施例以及圖式中,相同之元件標號,代表相同或近似之元件或其結構特徵。 The applicant first explains that throughout the entire specification, including the embodiments described below and the claims of the patent application, the terms related to direction are based on the directions in the drawings. Secondly, in the embodiments and drawings to be described below, the same component numbers represent the same or similar components or their structural features.

如圖1及圖2所示,本發明的散熱裝置10包括一基板20、一發熱源30、一散熱模組40及一導熱層50。發熱源30連接基板20,基板20可以有其他電子元件,例如被動元件或主動元件,發熱源30例如晶片(chip)。散熱模組40可以是散熱鰭片、散熱蓋、散熱板、散熱管等形式或結合主動散熱裝置,例如水冷式、氣冷式散熱。導熱蓋是蓋住發熱源30,且導熱蓋上可以結合另一散熱模組。導熱層50連接散熱模組40及發熱源30。導熱層50包括一相變化導熱單元51及一圍牆結構53。相變化導熱單51元包括混合在一起的相變化導電材料511及絕緣導熱材料513。 As shown in FIG. 1 and FIG. 2 , the heat dissipation device 10 of the present invention includes a substrate 20, a heat source 30, a heat dissipation module 40 and a heat conductive layer 50. The heat source 30 is connected to the substrate 20. The substrate 20 may have other electronic components, such as passive components or active components. The heat source 30 is, for example, a chip. The heat dissipation module 40 may be in the form of a heat dissipation fin, a heat dissipation cover, a heat dissipation plate, a heat dissipation pipe, etc., or may be combined with an active heat dissipation device, such as water-cooled or air-cooled heat dissipation. The heat conductive cover covers the heat source 30, and another heat dissipation module may be combined on the heat conductive cover. The heat conductive layer 50 connects the heat dissipation module 40 and the heat source 30. The heat conductive layer 50 includes a phase change heat conductive unit 51 and a wall structure 53. The phase change thermal conductive unit 51 includes a phase change conductive material 511 and an insulating thermal conductive material 513 mixed together.

導熱層50的原材料可以是膏狀、泥狀、膠狀、片狀、液狀等型態,導熱層50的原材料也稱為填縫劑、散熱材料或導熱材料等,而可透過塗佈、點膠、印刷、置放等方式填充在發熱源30上,或是將散熱膠片貼合在發熱源30上,接著將散熱模組40與發熱源30壓合,而對散熱膏或散熱膠片擠壓,讓散熱膏或散熱膠片順應散熱模組40及發熱源30的表面起伏變化而相互結合。 The raw material of the heat conductive layer 50 can be in the form of paste, mud, glue, sheet, liquid, etc. The raw material of the heat conductive layer 50 is also called filler, heat dissipation material or heat conductive material, etc., and can be filled on the heat source 30 by coating, dispensing, printing, placement, etc., or a heat dissipation film is attached to the heat source 30, and then the heat dissipation module 40 and the heat source 30 are pressed, and the heat dissipation paste or heat dissipation film is squeezed, so that the heat dissipation paste or heat dissipation film conforms to the surface fluctuations of the heat dissipation module 40 and the heat source 30 and combines with each other.

散熱膏、散熱膠或散熱材料包括低密度的絕緣導熱材料513及高密度的相變化導電材料511。因此,無論如何被擠壓低密度的絕緣導熱材料513都可以包圍相變化導熱單元51,隨後,導熱層50外圍的低密度的絕緣導熱材料 513可形成圍牆結構53,而包圍內部的混合材料(即絕緣導熱材料513及相變化導電材料511)。 The heat dissipation paste, heat dissipation glue or heat dissipation material includes a low-density insulating thermal conductive material 513 and a high-density phase change conductive material 511. Therefore, no matter how the low-density insulating thermal conductive material 513 is squeezed, it can surround the phase change conductive unit 51. Subsequently, the low-density insulating thermal conductive material 513 on the periphery of the thermal conductive layer 50 can form a wall structure 53 to surround the internal mixed material (i.e., the insulating thermal conductive material 513 and the phase change conductive material 511).

由於,導熱層50是受到散熱模組40的擠壓,且外圍形成圍牆結構53,因此,圍牆結構53是不規則圖案。其他實施例中,導熱層50被限制在特定的框架內,圍牆結構53才會受限於框架的圖案,例如導熱層50在中空矩形框架內,被擠壓的導熱層50圖案就會近似矩形框架。 Since the heat-conducting layer 50 is squeezed by the heat dissipation module 40 and the outer wall structure 53 is formed, the wall structure 53 is an irregular pattern. In other embodiments, the heat-conducting layer 50 is confined in a specific frame, and the wall structure 53 is limited by the pattern of the frame. For example, if the heat-conducting layer 50 is in a hollow rectangular frame, the squeezed heat-conducting layer 50 pattern will be similar to a rectangular frame.

絕緣導熱材料513的密度較相變化導電材料511的密度低。相變化導電材料511的內聚力較佳。絕緣導熱材料513包括基礎油及添加劑,基礎油可以是合成油、半合成油、礦物油等各油脂類,例如二甲基矽油、苯基矽油、乙基矽油、羥基矽油、氨基矽油、含氫矽油、乙烯基矽油、改性矽油、環狀二甲基矽油或苯甲基矽油等的其中至少一者。添加劑例如二甲基二氯矽烷、丙烯矽烷、苯代三氯矽烷、甲基丙烯矽烷、苯基三甲氧基矽烷、環氧矽烷、癸基三甲氧基矽烷、三甲氧基矽烷、三氟丙基三甲氧基矽烷、乙烯基三氯矽烷、六甲基二矽氮烷、甲基二乙氧基矽烷、四乙氧基矽烷、苯乙烯基三甲氧基矽烷、甲基三氯矽烷、3-甲基丙烯醯氧丙基、N-乙烯基芐基-2-氨乙基-3-氨丙基三甲氧基矽烷鹽酸鹽、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-異氰酸酯丙基三乙氧基矽烷等地其中至少一者。相變化導電材料511包括金、銀、銅、鎂、鉑、鎵、銦、錳、錫、鉛、鋅、鉍、鈀等金屬或合金成分的至少一者。因為,絕緣導熱材料513的密度較相變化導熱單元51的密度低,因此,擠壓過程中相變化導電材料511都會被絕緣導熱材料513包覆,並推擠絕緣導熱材料513。 The density of the insulating thermally conductive material 513 is lower than that of the phase change conductive material 511. The phase change conductive material 511 has better cohesion. The insulating thermally conductive material 513 includes a base oil and an additive. The base oil can be synthetic oil, semi-synthetic oil, mineral oil, or other oils, such as dimethyl silicone oil, phenyl silicone oil, ethyl silicone oil, hydroxyl silicone oil, amino silicone oil, hydrogenated silicone oil, vinyl silicone oil, modified silicone oil, cyclic dimethyl silicone oil, or benzyl silicone oil. The additive may be at least one of dimethyldichlorosilane, acrylsilane, phenyltrichlorosilane, methacrylic silane, phenyltrimethoxysilane, epoxysilane, decyltrimethoxysilane, trimethoxysilane, trifluoropropyltrimethoxysilane, vinyltrichlorosilane, hexamethyldisilazane, methyldiethoxysilane, tetraethoxysilane, styryltrimethoxysilane, methyltrichlorosilane, 3-methacryloyloxypropyl, N-vinylbenzyl-2-aminoethyl-3-aminopropyltrimethoxysilane hydrochloride, 3-ureidopropyltriethoxysilane, 3-butylpropyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, etc. The phase-change conductive material 511 includes at least one of metals or alloy components such as gold, silver, copper, magnesium, platinum, gallium, indium, manganese, tin, lead, zinc, bismuth, and palladium. Because the density of the insulating thermal conductive material 513 is lower than that of the phase-change thermal conductive unit 51, the phase-change conductive material 511 will be coated by the insulating thermal conductive material 513 during the extrusion process and push the insulating thermal conductive material 513.

相變化導熱單元51分佈在發熱源30上,相變化導電材料511屬於高熔化熱的成分或物質,以藉由被加熱在特定的溫度參數時發生相變化(例如熔化或固化),本實施例中相變化是被加熱後使固態轉變為液態,如此,藉由相變化的狀態改變達到吸收或釋放熱能。 The phase change heat conducting unit 51 is distributed on the heat source 30. The phase change conductive material 511 is a component or substance with high melting heat, and undergoes phase change (such as melting or solidification) when heated to a specific temperature parameter. In this embodiment, the phase change is to change the solid state into the liquid state after heating. In this way, the state change of the phase change is used to absorb or release heat energy.

圍牆結構53的成分是相變化導熱單元51中的部分絕緣導熱材料513固化的結果。圍牆結構53自相變化導熱單元51向外延伸,以包覆相變化導熱單元51,如此,相變化導熱單元51被限制在圍牆結構53內,以改善相變化導熱單元51中相變化導電材料511在液態時外溢至圍牆結構53外。 The composition of the wall structure 53 is the result of the solidification of part of the insulating heat conductive material 513 in the phase change heat conductive unit 51. The wall structure 53 extends outward from the phase change heat conductive unit 51 to cover the phase change heat conductive unit 51. In this way, the phase change heat conductive unit 51 is confined within the wall structure 53 to improve the phase change conductive material 511 in the phase change heat conductive unit 51 from overflowing to the outside of the wall structure 53 when in liquid state.

如圖2所示,圍牆結構53包括一第一接觸面531、一第二接觸面533、一內擋牆535及一外擋牆537。第一接觸面531接觸散熱模組40,且順應散熱模組40的表面起伏變化。第二接觸面533接觸基板20,且順應基板20及發熱源30的表面起伏變化。其中,第一接觸面531及第二接觸面533大致是不會暴露在環境中。內擋牆535連接第一接觸面531及第二接觸面533的周圍,且包圍相變化導熱單元51,以阻擋液態的相變化導熱單元51的相變化導電材料511外洩。外擋牆537連接第一接觸面531及第二接觸面533的周圍,且包圍內擋牆535。 As shown in FIG. 2 , the wall structure 53 includes a first contact surface 531, a second contact surface 533, an inner barrier wall 535, and an outer barrier wall 537. The first contact surface 531 contacts the heat dissipation module 40 and conforms to the surface fluctuations of the heat dissipation module 40. The second contact surface 533 contacts the substrate 20 and conforms to the surface fluctuations of the substrate 20 and the heat source 30. The first contact surface 531 and the second contact surface 533 are generally not exposed to the environment. The inner barrier wall 535 connects the periphery of the first contact surface 531 and the second contact surface 533 and surrounds the phase change heat conductive unit 51 to prevent the phase change conductive material 511 of the liquid phase change heat conductive unit 51 from leaking out. The outer retaining wall 537 connects the first contact surface 531 and the second contact surface 533 and surrounds the inner retaining wall 535.

本實施例中,圍牆結構53是雙層的,即外擋牆537及內擋牆535。外擋牆537是暴露在散熱模組40及基板20之間的間隙,在常溫環境中接觸空氣的作用而形成近似薄膜的牆。內擋牆535則是在接收到熱能(即被加熱)後固化成形,熱能可以是外部加熱,例如透過加熱腔或藉由發熱源30運作時產生的熱能,以使導熱層50形成圍牆結構53。當圍牆結構53成型後,圍牆結構內部的 相變化導熱單元51可以維持膏狀及導熱功能,以允許相變化導電材料511進行相變。 In this embodiment, the wall structure 53 is double-layered, namely, an outer wall 537 and an inner wall 535. The outer wall 537 is exposed to the gap between the heat dissipation module 40 and the substrate 20, and forms a wall similar to a thin film by contacting the air in a normal temperature environment. The inner wall 535 is solidified after receiving heat energy (i.e., being heated). The heat energy can be external heating, such as heat energy generated by a heating chamber or by the operation of the heat source 30, so that the heat conductive layer 50 forms the wall structure 53. After the wall structure 53 is formed, the phase change heat conductive unit 51 inside the wall structure can maintain the paste and heat conductive function to allow the phase change conductive material 511 to undergo phase change.

如圖3所示,發熱源30包括一發熱面31,發熱面31背對基板20。圍牆結構53連接發熱源30的發熱面31及散熱模組40。第二接觸面533是接觸發熱源30的發熱面31,且順應發熱面31的表面起伏。 As shown in FIG3 , the heat source 30 includes a heat generating surface 31, and the heat generating surface 31 faces away from the substrate 20. The wall structure 53 connects the heat generating surface 31 of the heat generating source 30 and the heat dissipation module 40. The second contact surface 533 contacts the heat generating surface 31 of the heat generating source 30 and conforms to the surface undulations of the heat generating surface 31.

如此,雙層的圍牆結構53可以讓導熱層50的結構更為穩定,來避免液態的相變化導熱單元51的相變化導電材料511洩漏或溢流至圍牆結構53外。再者,發熱源30與散熱模組40與導熱層50的緊密接觸,且相變化導熱單元51中相變化導電材料511的熱傳導能力優於絕緣導熱材料513,因此,當相變化導電材料511接受熱能而變相後,使得導熱層50能更有效率地將發熱源30的熱能傳導至散熱模組40。 In this way, the double-layer wall structure 53 can make the structure of the heat-conducting layer 50 more stable to prevent the phase-change conductive material 511 of the liquid phase-change heat-conducting unit 51 from leaking or overflowing outside the wall structure 53. Furthermore, the heat source 30, the heat dissipation module 40 and the heat-conducting layer 50 are in close contact, and the heat conduction capacity of the phase-change conductive material 511 in the phase-change heat-conducting unit 51 is better than that of the insulating heat-conducting material 513. Therefore, when the phase-change conductive material 511 receives heat energy and changes phase, the heat-conducting layer 50 can more efficiently transfer the heat energy of the heat source 30 to the heat dissipation module 40.

本發明的散熱裝置可以透過導熱層的形成將發熱源的熱能傳導至散熱模組,且透過導熱層中導熱效果較佳的相變化導電材料來優化熱傳導能力,並以導熱層本身形成的圍牆結構包圍相變化導電材料,如此,當相變化導電材料相變為液態後,液態的相變化導電材料受到圍牆結構限制而不會外洩至圍牆結構外。 The heat dissipation device of the present invention can transfer the heat energy of the heat source to the heat dissipation module through the formation of a heat conductive layer, and optimize the heat conduction capacity through the phase change conductive material with better heat conductivity in the heat conductive layer, and surround the phase change conductive material with a wall structure formed by the heat conductive layer itself. In this way, when the phase change conductive material changes to a liquid state, the liquid phase change conductive material is restricted by the wall structure and will not leak out of the wall structure.

最後,本發明於前揭實施例中所揭露的構成元件,僅為舉例說明,並非用以限制本發明之範圍,其他等效元件的替代或變化,亦應為本發明之申請專利範圍所涵蓋。 Finally, the components disclosed in the above-mentioned embodiments of the present invention are only for illustration and are not intended to limit the scope of the present invention. Replacements or changes of other equivalent components should also be covered by the scope of the patent application of the present invention.

10:散熱裝置 10: Heat dissipation device

20:基板 20: Substrate

30:發熱源 30: Heat source

40:散熱模組 40: Heat dissipation module

50:導熱層 50: Thermal conductive layer

51:相變化導熱單元 51: Phase change heat conduction unit

511:相變化導電材料 511: Phase change conductive material

513:絕緣導熱材料 513: Insulation and thermal conductive materials

53:圍牆結構 53: Wall structure

531:第一接觸面 531: First contact surface

533:第二接觸面 533: Second contact surface

535:內擋牆 535: Internal retaining wall

537:外擋牆 537:External wall

Claims (8)

一種散熱裝置,包括:一基板;一發熱源,連接該基板;一散熱模組;及一導熱層,連接該散熱模組及該發熱源,且包括一相變化導熱單元及一圍牆結構,該相變化導熱單元包括混合的相變化導電材料及絕緣導熱材料,該絕緣導熱材料的密度較該相變化導電材料的密度低,該圍牆結構形成在該相變化導熱單元的外周圍,以圍繞該相變化導熱單元,並接觸環境空氣,該圍牆結構與該相變化導熱單元的絕緣導熱材料有關,該圍牆結構位在該基板及該散熱模組之間。 A heat dissipation device includes: a substrate; a heat source connected to the substrate; a heat dissipation module; and a heat conductive layer connected to the heat dissipation module and the heat source, and includes a phase change heat conductive unit and a wall structure, the phase change heat conductive unit includes a mixed phase change conductive material and an insulating heat conductive material, the density of the insulating heat conductive material is lower than the density of the phase change conductive material, the wall structure is formed around the phase change heat conductive unit to surround the phase change heat conductive unit and contact the ambient air, the wall structure is related to the insulating heat conductive material of the phase change heat conductive unit, and the wall structure is located between the substrate and the heat dissipation module. 如請求項1所述的散熱裝置,其中,該圍牆結構包括一第一接觸面、一第二接觸面、一外擋牆及一內擋牆,該第一接觸面接觸該散熱模組,該第二接觸面接觸該基板,該內擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該相變化導熱單元,該外擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該內擋牆。 The heat dissipation device as described in claim 1, wherein the wall structure includes a first contact surface, a second contact surface, an outer barrier wall and an inner barrier wall, the first contact surface contacts the heat dissipation module, the second contact surface contacts the substrate, the inner barrier wall connects the first contact surface and the second contact surface around and surrounds the phase change heat conduction unit, and the outer barrier wall connects the first contact surface and the second contact surface around and surrounds the inner barrier wall. 如請求項1所述的散熱裝置,其中,該發熱源包括一發熱面,該發熱面背對該基板,該圍牆結構包括一第一接觸面、一第二接觸面、一外擋牆及一內擋牆,該第一接觸面接觸該散熱模組,該第二接觸面接觸該發熱面, 該內擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該相變化導熱單元,該外擋牆連接該第一接觸面及該第二接觸面的周圍,且包圍該內擋牆。 The heat dissipation device as described in claim 1, wherein the heat source includes a heat generating surface, the heat generating surface is opposite to the substrate, the wall structure includes a first contact surface, a second contact surface, an outer barrier wall and an inner barrier wall, the first contact surface contacts the heat dissipation module, the second contact surface contacts the heat generating surface, the inner barrier wall connects the first contact surface and the second contact surface around, and surrounds the phase change heat conducting unit, the outer barrier wall connects the first contact surface and the second contact surface around, and surrounds the inner barrier wall. 如請求項2或3所述的散熱裝置,其中,該圍牆結構的內擋牆成形是透過熱能,該外擋牆的成形與接觸環境空氣有關。 A heat dissipation device as described in claim 2 or 3, wherein the inner wall of the enclosure structure is formed by heat energy, and the outer wall is formed by contact with ambient air. 如請求項1所述的散熱裝置,其中,該圍牆結構的內擋牆成形是透過熱能。 A heat dissipation device as described in claim 1, wherein the inner wall of the enclosure structure is formed by thermal energy. 如請求項1所述的散熱裝置,其中,該圍牆結構的內擋牆及外擋牆形狀是不規則圖案。 A heat dissipation device as described in claim 1, wherein the inner and outer walls of the enclosure structure are in irregular shapes. 如請求項1所述的散熱裝置,其中,該相變化導熱單元包括混合在一起的一相變化導電材料及一絕緣導熱材料,該相變化導電材料包括被加熱使固態轉變為液態。 A heat dissipation device as described in claim 1, wherein the phase change heat conductive unit includes a phase change conductive material and an insulating heat conductive material mixed together, and the phase change conductive material includes a solid state that is heated to change into a liquid state. 如請求項7所述的散熱裝置,其中,該圍牆結構是部分該絕緣導熱材料固化的結果。 A heat dissipation device as described in claim 7, wherein the wall structure is the result of a portion of the insulating thermally conductive material being solidified.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010002982A1 (en) * 1996-06-12 2001-06-07 Sarkhel Amit Kumar Lead-free, high tin ternary solder alloy of tin, silver, and bismuth
CN106304798A (en) * 2016-09-29 2017-01-04 努比亚技术有限公司 Smart machine and radiator structure thereof
TWM649268U (en) * 2023-06-29 2023-12-11 思鉑材料有限公司 Heat dissipation apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010002982A1 (en) * 1996-06-12 2001-06-07 Sarkhel Amit Kumar Lead-free, high tin ternary solder alloy of tin, silver, and bismuth
CN106304798A (en) * 2016-09-29 2017-01-04 努比亚技术有限公司 Smart machine and radiator structure thereof
TWM649268U (en) * 2023-06-29 2023-12-11 思鉑材料有限公司 Heat dissipation apparatus

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