TWM573080U - Loading jig - Google Patents
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- TWM573080U TWM573080U TW107213721U TW107213721U TWM573080U TW M573080 U TWM573080 U TW M573080U TW 107213721 U TW107213721 U TW 107213721U TW 107213721 U TW107213721 U TW 107213721U TW M573080 U TWM573080 U TW M573080U
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- carrier
- supporting
- support
- limiting
- wafer
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- 235000012431 wafers Nutrition 0.000 claims abstract description 122
- 238000011010 flushing procedure Methods 0.000 claims abstract description 48
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 13
- 230000017525 heat dissipation Effects 0.000 claims description 11
- 230000002265 prevention Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 25
- 239000002184 metal Substances 0.000 description 11
- 238000006748 scratching Methods 0.000 description 4
- 230000002393 scratching effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
一種承載治具,適用於供多個晶片設置,該承載治具是包含一第一承載件,以及一第二承載件。該第一承載件包括一第一片體、多個第一沖洗孔,以及多個支撐單元,該等第一沖洗孔是均勻分布於該第一片體,該等支撐單元分別設於該等第一沖洗孔的邊緣處且適用於支撐該等晶片。該第二承載件能與該第一承載件相配合且可拆離地設於該第一承載件,該第二承載件包括一第二片體、多個第二沖洗孔,以及多個限位單元。該等第二沖洗孔分別對應於該等第一沖洗孔地形成於該第二片體,該等限位單元分別設於該等第二沖洗孔且適用於供該等晶片的頂面靠抵。 A bearing fixture is provided for providing a plurality of wafers, the carrier fixture comprising a first carrier and a second carrier. The first carrier includes a first body, a plurality of first flushing holes, and a plurality of supporting units, the first flushing holes are evenly distributed on the first body, and the supporting units are respectively disposed on the first The edge of the first rinse hole is adapted to support the wafers. The second carrier can be detachably disposed on the first carrier, and the second carrier includes a second body, a plurality of second flushing holes, and a plurality of limits Bit unit. The second flushing holes are respectively formed on the second sheet corresponding to the first flushing holes, and the limiting units are respectively disposed in the second flushing holes and are adapted to be supported by the top surface of the wafers. .
Description
本新型是有關於一種治具,特別是指一種承載治具。 The present invention relates to a fixture, and more particularly to a bearing fixture.
現有一種以四方形平面無引腳封裝方式(QFN、DR-QFN)製成的晶片,在製作時是以一模具同時封裝製成呈片狀且具有多個晶片的晶片集合體,再將該晶片集合體以刀具切割成多個晶片。然而,由於刀具切割時其本身將因摩擦而產生高溫,且該等晶片的多個金屬材質的接腳除了顯露於晶片的底面外亦顯露於側邊切割面,因此晶片的該等接腳在進行切割時可能由於刀具的溫度而部分熔融並濺灑於側邊切割面,進而造成該等接腳因所述金屬濺灑物而彼此短接,而使晶片無法應用於產品上。 A wafer made of a quad flat planar leadless package (QFN, DR-QFN) is manufactured by simultaneously molding a wafer assembly having a plurality of wafers in a mold, and then The wafer assembly is cut into a plurality of wafers by a cutter. However, since the cutting tool itself will generate high temperature due to friction, and the pins of the plurality of metal materials of the wafer are exposed on the side cutting surface except for the bottom surface of the wafer, the pins of the wafer are The cutting may be partially melted due to the temperature of the tool and splashed on the side cutting faces, thereby causing the pins to be shorted to each other due to the metal spatter, so that the wafer cannot be applied to the product.
因此,本新型之其中一目的,即在提供一種能供多個晶片設置並能供處理液通過以清洗去除該等晶片的金屬濺灑物的承載治具。 Accordingly, it is an object of the present invention to provide a carrier fixture that can be provided for a plurality of wafers and that can pass the treatment fluid for cleaning to remove metal spills from the wafers.
於是,本新型承載治具在一些實施態樣中,適用於供多個呈矩型板狀的晶片設置,每一晶片具有位於相反側的一底面與一頂面、四個連接於該底面與該頂面間的側面,該底面具有四個分別位於該底面的四個邊緣處的接腳區域,該承載治具是包含一第一承載件,以及一第二承載件。該第一承載件包 括一第一片體、多個第一沖洗孔,以及多個支撐單元,該第一片體具有位於相反側的一第一內側面及一第一外側面,該等第一沖洗孔是均勻分布且自該第一內側面貫穿至第一外側面地形成於該第一片體,每一第一沖洗孔的孔截面大於晶片的底面,該等支撐單元分別設於該等第一沖洗孔的邊緣處且適用於支撐該等晶片,每一支撐單元具有四個分別對應於晶片的四個邊角處的第一支撐結構,以及一連接於所述第一支撐結構的第二支撐結構,每一第一支撐結構具有一凸塊、一限位槽,該凸塊自對應的第一沖洗孔的孔壁面朝該第一沖洗孔的中心延伸而成,且該凸塊突伸出該第一片體的第一內側面並具有較該第一內側面突出的一凸塊頂面,該限位槽形成於該凸塊並適用於容置該等晶片的邊角處,且該限位槽是自該凸塊的凸塊頂面鄰近於該第一沖洗孔的中心處朝該第一外側面的方向延伸而成,該第二支撐結構自所述凸塊鄰近該第一外側面處延伸形成,且該第二支撐結構具有至少一支撐面,該等支撐面較該限位槽的底面鄰近於該凸塊的凸塊頂面,且適用於頂抵該等晶片的底面的該接腳區域之外的區域。該第二承載件能與該第一承載件相配合且可拆離地設於該第一承載件,該第二承載件包括一第二片體、多個第二沖洗孔,以及多個限位單元,該第二片體具有位於相反側的一第二內側面及一第二外側面,該第二內側面與該第一承載件的第一內側面相間隔地彼此相對,該等第二沖洗孔分別對應於該等第一沖洗孔且自該第二內側面貫穿至第二外側面地形成於該第二片體,且該等第二沖洗孔的孔截面大於晶片的頂面,該等限位單元分別設於該等第二沖洗孔且適用於供該等晶片的頂面靠抵。 Therefore, in some embodiments, the present invention is suitable for providing a plurality of rectangular plate-shaped wafers, each of which has a bottom surface and a top surface on the opposite side, and four connected to the bottom surface. The side surface of the top surface has four pin areas respectively located at four edges of the bottom surface, and the bearing fixture comprises a first carrier and a second carrier. The first carrier package a first sheet body, a plurality of first flushing holes, and a plurality of supporting units, the first sheet body having a first inner side surface and a first outer side surface on opposite sides, the first flushing holes are uniform Disposed from the first inner side surface to the first outer side surface formed on the first sheet body, each first flushing hole has a hole section larger than a bottom surface of the wafer, and the supporting units are respectively disposed in the first flushing holes And is adapted to support the wafers, each support unit having four first support structures respectively corresponding to four corners of the wafer, and a second support structure coupled to the first support structure, Each of the first supporting structures has a protrusion and a limiting slot extending from a hole wall surface of the corresponding first flushing hole toward a center of the first flushing hole, and the protrusion protrudes from the first a first inner side surface of the body and having a convex top surface protruding from the first inner side surface, the limiting groove is formed on the convex block and adapted to receive the corners of the wafers, and the limit is The groove is from a top surface of the bump of the bump adjacent to a center of the first flushing hole The second outer surface is formed by extending from the first outer side surface, and the second supporting structure has at least one supporting surface. The bottom surface of the bit groove is adjacent to the top surface of the bump of the bump and is adapted to abut against a region of the bottom surface of the wafer other than the pin area. The second carrier can be detachably disposed on the first carrier, and the second carrier includes a second body, a plurality of second flushing holes, and a plurality of limits a second unit having a second inner side and a second outer side on opposite sides, the second inner side being opposite to each other with the first inner side of the first carrier, the second The rinsing holes are respectively formed in the second slabs corresponding to the first rinsing holes and are formed from the second inner side surface to the second outer side surface, and the second rinsing holes have a hole section larger than the top surface of the wafer, Equal limiting units are respectively disposed in the second flushing holes and are adapted to be abutted against the top surface of the wafers.
在一些實施態樣中,該第二支撐結構具有四個分別自該四個凸塊鄰近該第一外側面處延伸形成的支撐凸條,每一支撐凸條具有一自對應的凸塊鄰近該第一外側面處朝對應的第一沖洗孔的中心延伸而成的延伸部,以及一自該延伸部的末端朝所述凸塊頂面的方向延伸而成且末端具有所述支撐面的支撐部,該支撐部的支撐面適用於頂抵該等晶片的底面的該接腳區域之外的區域。 In some implementations, the second support structure has four support ribs respectively extending from the four outer bumps adjacent to the first outer side surface, and each support rib has a corresponding convex bump adjacent to the support rib. An extension portion extending toward a center of the corresponding first flushing hole at the first outer side surface, and a support extending from a distal end of the extending portion toward a top surface of the convex portion and having a support surface at the end The support surface of the support portion is adapted to abut against an area outside the pin area of the bottom surface of the wafers.
在一些實施態樣中,該支撐部為截面呈矩形的柱體。 In some embodiments, the support portion is a cylinder having a rectangular cross section.
在一些實施態樣中,每一第二支撐結構還具有四個分別連接於相鄰的支撐凸條的延伸部的末端之間的防脫柱。 In some embodiments, each of the second support structures further has four retaining posts that are respectively coupled between the ends of the extensions of the adjacent support ribs.
在一些實施態樣中,該第二支撐結構具有四個支撐凸條、四個防脫柱,以及四個支撐凸部,該四個支撐凸條分別自該四個凸塊鄰近該第一外側面處延伸形成,每一支撐凸條具有一自對應的凸塊鄰近該第一外側面處朝對應的第一沖洗孔的中心延伸而成的延伸部,該四個防脫柱分別連接於相鄰的支撐凸條的延伸部的末端之間,該四個支撐凸部分別自該四個防脫柱朝所述凸塊頂面的方向延伸而成,且每一支撐凸部的末端具有所述支撐面。 In some implementations, the second support structure has four support ribs, four detachment prevention posts, and four support protrusions, and the four support ridges are respectively adjacent to the first outer block from the four protrusions. Extending from the side surface, each of the support ribs has an extension from the corresponding first convex portion toward the center of the corresponding first flushing hole, and the four retaining columns are respectively connected to the phase Between the ends of the extending portions of the adjacent supporting ribs, the four supporting convex portions respectively extend from the four retaining columns toward the top surface of the protruding block, and the end of each supporting convex portion has a Said support surface.
在一些實施態樣中,每一限位單元具有多個自對應的第二沖洗孔的孔壁面朝該第二沖洗孔的中央處延伸而成的限位凸條,以及一個連接於該等限位凸條的末端之間且較該第二內側面突出的限位柱,該限位柱適用於供該等晶片的頂面靠抵。 In some implementations, each of the limiting units has a plurality of limiting ribs extending from a wall of the corresponding second rinsing hole toward the center of the second rinsing hole, and a connection to the limit a limiting post between the ends of the ribs and protruding from the second inner side, the limiting posts being adapted to abut against the top surface of the wafers.
在一些實施態樣中,該限位柱還形成有一沿該限位柱的柱體延伸 方向貫穿地形成於該限位柱的通孔。 In some implementations, the limiting post is further formed with a cylinder extending along the limiting post The direction is formed through the through hole of the limiting post.
在一些實施態樣中,每一晶片的底面還具有一位於該底面的中央處且與該等接腳區域相間隔的散熱區域,以及一位於該等接腳區域與該散熱區域之間的封膠區域,該限位柱呈與該晶片的封膠區域相對應的柱狀,且該限位柱的通孔與該晶片的散熱區域相對應。 In some embodiments, the bottom surface of each of the wafers further has a heat dissipation region at a center of the bottom surface and spaced apart from the pin regions, and a seal between the pin regions and the heat dissipation region. In the glue region, the limiting column has a column shape corresponding to the sealing region of the wafer, and the through hole of the limiting column corresponds to the heat dissipation region of the wafer.
在一些實施態樣中,是適用於供該等晶片鬆配合地設置於該等支撐單元與該等限位單元之間。 In some embodiments, it is suitable for the wafers to be loosely disposed between the support units and the limit units.
在一些實施態樣中,每一第一支撐結構的限位槽具有一較遠離該凸塊頂面的第一槽部,以及一連接於該第一槽部與該凸塊頂面之間的第二槽部,該第一槽部朝向該凸塊頂面方向的截面大小整體一致,該第二槽部朝向該凸塊頂面方向的截面大小由與該第一槽部連接處朝與該凸塊頂面連接處逐漸擴大。 In some implementations, the limiting slot of each first supporting structure has a first slot portion that is farther away from the top surface of the bump, and a connecting between the first slot portion and the top surface of the bump. a second groove portion, the cross-sectional size of the first groove portion facing the top surface of the bump is uniform, and a cross-sectional dimension of the second groove portion facing the top surface of the bump is connected to the first groove portion. The top surface of the bump is gradually enlarged.
在一些實施態樣中,該第一承載件還包括多個分別形成於該第一片體的第一內側面的邊角處的墊塊,該等墊塊用以支撐於該第二承載件的第二內側面,以使該第二承載件的該第二內側面與該第一承載件的第一內側面相間隔地彼此相對。 In some embodiments, the first carrier further includes a plurality of spacers respectively formed at the corners of the first inner side of the first panel, the spacers being supported by the second carrier a second inner side surface such that the second inner side of the second carrier is opposite to the first inner side of the first carrier.
在一些實施態樣中,每一墊塊上貫穿地形成有多個平行於該第一內側面且彼此交錯連通的排液通道。 In some embodiments, each of the blocks is formed with a plurality of drainage channels that are parallel to the first inner side and are in staggered communication with each other.
在一些實施態樣中,該等墊塊中至少兩者各自形成有一定位孔,該第二承載件還包括多個形成於該第二片體的第二內側面的定位柱,該等定位 柱分別對應穿設於該等定位孔。 In some implementations, at least two of the pads are each formed with a positioning hole, and the second carrier further includes a plurality of positioning posts formed on the second inner side of the second body, the positioning The columns are respectively corresponding to the positioning holes.
在一些實施態樣中,該第二承載件還包括多個形成於該第二片體且自該第二內側面貫穿至該第二外側面的穿孔,該等穿孔分布於該等第二沖洗孔的外圍區域。 In some embodiments, the second carrier further includes a plurality of perforations formed in the second sheet and extending from the second inner side to the second outer side, the perforations being distributed in the second flush The peripheral area of the hole.
在一些實施態樣中,每一晶片的底面還具有一位於該底面的中央處且與該等接腳區域相間隔的散熱區域,以及一位於該等接腳區域與該散熱區域之間的封膠區域,該支撐面適用於頂抵在該底面的該封膠區域。 In some embodiments, the bottom surface of each of the wafers further has a heat dissipation region at a center of the bottom surface and spaced apart from the pin regions, and a seal between the pin regions and the heat dissipation region. a glue area adapted to abut against the seal area of the bottom surface.
本新型至少具有以下功效:藉由相配合的該第一承載件的支撐單元與該第二承載件的限位單元容置該等晶片,且藉由孔截面大於晶片的該第一承載件的第一沖洗孔與該第二承載件的第二沖洗孔,使處理液能夠通過並清洗該等晶片的側面,以去除該等晶片的側面上造成該等接腳短路的金屬濺灑物。 The present invention has at least the following effects: the wafers are accommodated by the supporting unit of the first carrier and the limiting unit of the second carrier, and the aperture is larger than the first carrier of the wafer. The first rinsing hole and the second rinsing hole of the second carrier enable the processing liquid to pass through and clean the sides of the wafers to remove metal spatters on the sides of the wafers that cause the pins to be short-circuited.
10‧‧‧承載治具 10‧‧‧bearing fixture
1‧‧‧第一承載件 1‧‧‧First carrier
11‧‧‧第一片體 11‧‧‧ first piece
111‧‧‧第一內側面 111‧‧‧First inner side
112‧‧‧第一外側面 112‧‧‧First outer side
12‧‧‧第一沖洗孔 12‧‧‧First flushing hole
13‧‧‧支撐單元 13‧‧‧Support unit
131‧‧‧第一支撐結構 131‧‧‧First support structure
132‧‧‧凸塊 132‧‧‧Bumps
132a‧‧‧凸塊頂面 132a‧‧‧Top surface of the bump
133‧‧‧限位槽 133‧‧‧Limited slot
133a‧‧‧第一槽部 133a‧‧‧First groove
133b‧‧‧第二槽部 133b‧‧‧Second trough
130‧‧‧第二支撐結構 130‧‧‧second support structure
134‧‧‧支撐凸條 134‧‧‧Support ribs
134a‧‧‧延伸部 134a‧‧‧Extension
134b‧‧‧支撐部 134b‧‧‧Support
134c‧‧‧支撐面 134c‧‧‧ support surface
135‧‧‧防脫柱 135‧‧‧Anti-column
136‧‧‧流道 136‧‧‧ flow path
137‧‧‧支撐凸部 137‧‧‧Support convex
137a‧‧‧支撐面 137a‧‧‧ support surface
14‧‧‧墊塊 14‧‧‧
141‧‧‧排液通道 141‧‧‧Draining channel
142‧‧‧定位孔 142‧‧‧Positioning holes
15‧‧‧第一缺角部 15‧‧‧The first corner
16‧‧‧第一定位孔 16‧‧‧First positioning hole
2‧‧‧第二承載件 2‧‧‧Second carrier
21‧‧‧第二片體 21‧‧‧Second body
211‧‧‧第二內側面 211‧‧‧Second inner side
212‧‧‧第二外側面 212‧‧‧Second outer side
22‧‧‧第二沖洗孔 22‧‧‧Second flushing hole
23‧‧‧限位單元 23‧‧‧Limited unit
231‧‧‧限位凸條 231‧‧‧Limited ribs
232‧‧‧限位柱 232‧‧‧Limited column
232a‧‧‧通孔 232a‧‧‧through hole
24‧‧‧穿孔 24‧‧‧Perforation
25‧‧‧定位柱 25‧‧‧Positioning column
26‧‧‧第二缺角部 26‧‧‧The second corner
27‧‧‧第二定位孔 27‧‧‧Second positioning hole
3‧‧‧晶片 3‧‧‧ wafer
31‧‧‧底面 31‧‧‧ bottom
311‧‧‧接腳區域 311‧‧‧ pin area
312‧‧‧散熱區域 312‧‧‧heating area
313‧‧‧封膠區域 313‧‧‧ Sealing area
32‧‧‧頂面 32‧‧‧ top surface
33‧‧‧側面 33‧‧‧ side
34‧‧‧接腳 34‧‧‧ pins
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一晶片的一仰視示意圖;圖2是該晶片的一側視示意圖;圖3是一俯視示意圖,說明本新型承載治具的一第一實施例的一第一承載件;圖4是一仰視示意圖,說明該第一實施例的一第二承載件; 圖5是一局部立體示意圖,說明該第一承載件的支撐單元與該第二承載件的限位單元;圖6是一視角不同於圖5的視圖;圖7是一局部俯視示意圖,說明該第一承載件的支撐單元;圖8是一局部俯視示意圖,說明該晶片置放於該第一承載件的支撐單元;圖9是一局部俯視示意圖,說明一變化實施例的第一承載件的支撐單元;圖10是一局部立體示意圖,說明該變化實施例的支撐單元的限位槽;圖11是一局部仰視示意圖,說明該第二承載件的限位單元;圖12是局部仰視示意圖,說明一變化實施例的該第二承載件的限位單元;圖13是圖12的一局部剖視示意圖;圖14是一局部俯視示意圖,說明該晶片置放於該第一承載件的支撐單元與該第二承載件的限位單元之間;圖15是沿圖14中XV-XV線所截取的一局部剖視示意圖;圖16一俯視示意圖,說明本新型承載治具的一第二實施例的第一承載件;圖17一局部立體示意圖,說明該第一承載件的支撐單元與該第二承載件的限位單元;圖18是一視角不同於圖17的視圖;圖19是一局部俯視示意圖,說明該第一承載件的支撐單元;圖20是一局部俯視示意圖,說明該晶片置放於該第一承載件的支撐單元;圖21是一局部剖視示意圖,說明該晶片置放於該第一承載件的支撐單元 與該第二承載件的限位單元之間;圖22是一俯視示意圖,說明本新型承載治具的一第三實施例的第一承載件;圖23是一仰視示意圖,說明該第三實施例的一第二承載件;圖24是一局部俯視示意圖,說明該第一承載件的支撐單元;圖25是一局部仰視示意圖,說明該第二承載件的限位單元;圖26是一局部俯視示意圖,說明該晶片置放於該第一承載件的支撐單元與該第二承載件的限位單元之間;圖27是一局部立體示意圖,說明本新型承載治具的一第四實施例的該第一承載件的支撐單元與該第二承載件的限位單元;圖28是一視角不同於圖27的視圖;圖29是一局部俯視示意圖,說明該第一承載件的支撐單元;圖30是一局部俯視示意圖,說明該晶片置放於該第一承載件的支撐單元;以及圖31是一局部剖視示意圖,說明該晶片置放於該第一承載件的支撐單元與該第二承載件的限位單元之間。 Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is a schematic view of a wafer; FIG. 2 is a side view of the wafer; FIG. The schematic diagram illustrates a first carrier of a first embodiment of the present invention; FIG. 4 is a bottom view showing a second carrier of the first embodiment; 5 is a partial perspective view showing the supporting unit of the first carrier and the limiting unit of the second carrier; FIG. 6 is a view different from FIG. 5; FIG. 7 is a partial top view illustrating the FIG. 8 is a partial top plan view showing the wafer placed on the support unit of the first carrier; FIG. 9 is a partial top plan view illustrating the first carrier of a modified embodiment. FIG. 10 is a partial perspective view showing the limiting slot of the supporting unit of the modified embodiment; FIG. 11 is a partial bottom view showing the limiting unit of the second carrier; FIG. 12 is a partial bottom view. FIG. 13 is a partial cross-sectional view of FIG. 12; FIG. 14 is a partial top plan view showing the wafer being placed on the supporting unit of the first carrier FIG. 15 is a partial cross-sectional view taken along line XV-XV of FIG. 14; FIG. 16 is a top plan view showing a second embodiment of the novel carrier fixture example FIG. 17 is a partial perspective view showing the supporting unit of the first carrier and the limiting unit of the second carrier; FIG. 18 is a view different from FIG. 17; FIG. 19 is a partial top view FIG. 20 is a partial top plan view showing the wafer placed on the supporting unit of the first carrier; FIG. 21 is a partial cross-sectional view showing the wafer placed on the wafer Supporting unit of the first carrier FIG. 22 is a top plan view showing a first carrier of a third embodiment of the present invention; FIG. 23 is a bottom view showing the third embodiment. Figure 2 is a partial top plan view showing the supporting unit of the first carrier; Figure 25 is a partial bottom view showing the limiting unit of the second carrier; Figure 26 is a partial The top view shows that the wafer is placed between the support unit of the first carrier and the limiting unit of the second carrier; FIG. 27 is a partial perspective view showing a fourth embodiment of the novel carrier fixture. The supporting unit of the first carrier and the limiting unit of the second carrier; FIG. 28 is a view different from that of FIG. 27; FIG. 29 is a partial top view showing the supporting unit of the first carrier; Figure 30 is a partial top plan view showing the wafer placed on the support unit of the first carrier; and Figure 31 is a partial cross-sectional view showing the wafer being placed on the support unit of the first carrier and the first Two bearers Between the limit units of the piece.
在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖1至圖4,本新型承載治具10之一第一實施例,適用於供多個呈正方形板狀的晶片3設置,且能供處理液通過以清洗去除該等晶片3上的金屬濺灑物(圖未示),在本第一實施例中,該等晶片3為以雙排式四方平面無引腳封裝方式(Dual Row Quad Flat No lead,DR-QFN)製成,但在其他實施態樣中,該等晶片3也可是以QFN、DFN等封裝方式製成。每一晶片3具有位於相反側的一底面31與一頂面32、四個連接於該底面31與該頂面32間的側面33。該底面31具有四個分別位於該底面31的四個邊緣處的接腳區域311、一位於該底面31的中央處且與該等接腳區域311相間隔的散熱區域312,以及一位於該等接腳區域311與該散熱區域312之間的封膠區域313。進一步地說,該晶片3具有多個接腳34,每一接腳34同時顯露於其中一接腳區域311以及與相鄰於該接腳區域311的側面33處,所述金屬濺灑物是該等晶片3在進行切割製程時,由於具有高溫的刀具而使晶片3顯露於側面33處的該等接腳34熔融並濺灑於側面33,且所述金屬濺灑物的產生可能導致該些接腳34彼此之間發生短路的情況。該承載治具10包含一第一承載件1,以及一第二承載件2。 Referring to FIG. 1 to FIG. 4, a first embodiment of the present invention is applicable to a plurality of wafers 3 having a square plate shape, and the processing liquid can pass through to clean and remove the metal on the wafers 3. Sputters (not shown), in the first embodiment, the wafers 3 are made in a dual row quad flat no lead (DR-QFN), but in In other embodiments, the wafers 3 may also be fabricated in a package such as QFN or DFN. Each of the wafers 3 has a bottom surface 31 and a top surface 32 on the opposite side, and four side surfaces 33 connected between the bottom surface 31 and the top surface 32. The bottom surface 31 has four pin regions 311 respectively located at four edges of the bottom surface 31, a heat dissipation region 312 located at a center of the bottom surface 31 and spaced apart from the pin regions 311, and a a sealing area 313 between the pin area 311 and the heat dissipation area 312. Further, the wafer 3 has a plurality of pins 34, each of which is simultaneously exposed at one of the pin regions 311 and at a side 33 adjacent to the pin region 311, the metal spatter is When the wafers 3 are subjected to a dicing process, the pins 34 exposed at the side faces 33 of the wafer 3 are melted and sprinkled on the side faces 33 due to the high temperature knives, and the generation of the metal spatter may cause the The case where the pins 34 are short-circuited with each other. The bearing fixture 10 includes a first carrier 1 and a second carrier 2.
該第一承載件1包括一第一片體11、多個第一沖洗孔12,以及多個支撐單元13。所述第一片體11大致呈矩形,但不以此為限。另外,在本第一實施例中該第一承載件1是以不鏽鋼材質製成,但不以此為限。該第一片體11具有位於相反側的一第一內側面111及一第一外側面112,該等第一沖洗孔12是均勻分布且自該第一內側面111貫穿至第一外側面112地形成於該第一片體11,每一第一沖洗孔12的孔截面大於晶片3的底面31。 The first carrier 1 includes a first body 11 , a plurality of first irrigation holes 12 , and a plurality of support units 13 . The first body 11 is substantially rectangular, but is not limited thereto. In addition, in the first embodiment, the first carrier 1 is made of stainless steel, but is not limited thereto. The first sheet body 11 has a first inner side surface 111 and a first outer side surface 112 on opposite sides. The first flushing holes 12 are evenly distributed and penetrate from the first inner side surface 111 to the first outer side surface 112. The first sheet body 11 is formed on the first sheet body 11, and the cross section of each of the first flushing holes 12 is larger than the bottom surface 31 of the wafer 3.
參閱圖5至圖8,該等支撐單元13分別設於該等第一沖洗孔12的邊緣處且適用於支撐該等晶片3,每一支撐單元13具有四個分別對應於晶片3的四個邊角處的第一支撐結構131,以及一連接於所述第一支撐結構131的第二支撐結構130,每一第一支撐結構131具有一凸塊132、一限位槽133,該凸塊132自對應的第一沖洗孔12的孔壁面朝該第一沖洗孔12的中心延伸而成,且該凸塊132突伸出該第一片體11的第一內側面111並具有較該第一內側面111突出的一凸塊頂面132a,該限位槽133形成於該凸塊132並適用於容置該等晶片3的邊角處,且該限位槽133是自該凸塊132的凸塊頂面132a鄰近於該第一沖洗孔12的中心處朝該第一外側面112的方向延伸而成,該第二支撐結構130自所述凸塊132鄰近該第一外側面112處延伸形成,該第二支撐結構130具有四個分別自該四個凸塊132鄰近該第一外側面112處延伸形成的支撐凸條134,每一支撐凸條134具有一自對應的凸塊132鄰近該第一外側面112處朝對應的第一沖洗孔12的中心延伸而成的延伸部134a,以及一自該延伸部134a的末端朝所述凸塊頂面132a的方向延伸而成的支撐部134b,該支撐部134b具有一位於末端的支撐面134c,該支撐凸條134的支撐部134b的支撐面134c較該限位槽133的底面鄰近於該凸塊132的凸塊頂面132a,且適用於頂抵該等晶片3的底面31的該接腳區域311之外的區域。更進一步地說,在本第一實施例中,該支撐部134b的支撐面134c是適用頂抵在該等接腳區域311與該散熱區域312之間的該封膠區域313,且該支撐部134b為截面呈邊角處具有圓角的矩形的柱狀。藉由較該限位槽133的底面鄰近於該凸塊132的凸塊頂面132a的該支撐凸條134的支撐部134b的支撐面134c, 能使該晶片3的底面31周邊不直接與該等限位槽133接觸,以防止該等限位槽133阻擋該處理液接觸該等晶片3,並使該處理液更容易通過該第一承載件1與該等晶片3之間以增加該處理液於該承載治具10內的流動性。並且,由於該等支撐凸條134的支撐部134b的支撐面134c是對應頂抵晶片3的該封膠區域313,因此能防止該等支撐凸條134的支撐部134b刮傷該晶片3的底面31的接腳區域311以及散熱區域312,以避免該晶片3的接腳34、接腳34上的金屬鍍層或散熱區域312上的金屬鍍層受到損壞,且截面呈矩形的所述支撐部134b更能夠對應配合該封膠區域313的形狀,以避免所述支撐部134b觸及該封膠區域313以外的區域。 Referring to FIG. 5 to FIG. 8 , the supporting units 13 are respectively disposed at edges of the first flushing holes 12 and are adapted to support the wafers 3 , and each supporting unit 13 has four corresponding to the wafer 3 respectively. a first support structure 131 at a corner, and a second support structure 130 connected to the first support structure 131. Each of the first support structures 131 has a bump 132 and a limiting slot 133. The protrusion 132 extends from the center of the first rinsing hole 12 toward the center of the first rinsing hole 12, and the protrusion 132 protrudes from the first inner side 111 of the first piece 11 and has the same A bump top surface 132a protrudes from the inner side surface 111. The limiting slot 133 is formed in the bump 132 and is adapted to receive the corners of the wafers 3, and the limiting slot 133 is from the bump 132. The bump top surface 132a extends adjacent to the center of the first flushing hole 12 toward the first outer side surface 112. The second supporting structure 130 is adjacent to the first outer side surface 112 of the bump 132. Extendedly formed, the second support structure 130 has four shapes extending from the four outer protrusions 132 adjacent to the first outer side surface 112 Supporting ribs 134, each of the supporting ribs 134 has an extending portion 134a extending from the corresponding first protruding portion 132 toward the center of the corresponding first flushing hole 12, and a self-corresponding portion a support portion 134b extending from the end of the extending portion 134a toward the convex top surface 132a. The support portion 134b has a supporting surface 134c at the end, and the supporting surface 134c of the supporting portion 134b of the supporting rib 134 is compared. The bottom surface of the limiting slot 133 is adjacent to the bump top surface 132a of the bump 132 and is adapted to abut against a region of the bottom surface 31 of the wafer 3 other than the pin region 311. Further, in the first embodiment, the support surface 134c of the support portion 134b is adapted to abut against the seal region 313 between the pin region 311 and the heat dissipation region 312, and the support portion is 134b is a rectangular columnar shape having rounded corners at the corners. The bottom surface of the limiting groove 133 is adjacent to the supporting surface 134c of the supporting portion 134b of the supporting protrusion 134 of the bump top surface 132a of the bump 132. The periphery of the bottom surface 31 of the wafer 3 is not directly in contact with the limiting grooves 133, so as to prevent the limiting grooves 133 from blocking the processing liquid from contacting the wafers 3, and making the processing liquid pass the first bearing more easily. The workpiece 1 and the wafers 3 are used to increase the fluidity of the treatment liquid in the bearing fixture 10. Moreover, since the supporting surface 134c of the supporting portion 134b of the supporting ribs 134 is corresponding to the sealing region 313 of the wafer 3, the supporting portion 134b of the supporting ribs 134 can be prevented from scratching the bottom surface of the wafer 3. The pin area 311 of the 31 and the heat dissipating area 312 prevent the metal plating on the metal 34 or the heat dissipating area 312 of the pin 34 of the wafer 3 from being damaged, and the supporting portion 134b having a rectangular cross section is further The shape of the sealant region 313 can be matched to avoid the support portion 134b touching the region other than the sealant region 313.
此外,在本第一實施例中,每一第一支撐結構131的限位槽133具有一較遠離該凸塊頂面132a的第一槽部133a,以及一連接於該第一槽部133a與該凸塊頂面132a之間的第二槽部133b,該第一槽部133a朝向該凸塊頂面132a方向的截面大小整體一致,該第二槽部133b朝向該凸塊頂面132a方向的截面大小由與該第一槽部133a連接處朝與該凸塊頂面132a連接處逐漸擴大。換句話說,所述限位槽133的頂部開口處具有一朝外側方向逐漸擴大的斜角,且所述斜角的角度在本第一實施例中為15度,但不侷限於此。藉此能夠使該等晶片3的邊角處更容易地置於限位槽133內,以使該等晶片3能更容易且流暢地被置放該第一承載件1的支撐單元13。另外,配合參閱圖9與圖10,在一變化的實施例中,每一第一支撐結構131還具有一自該限位槽133頂部至該限位槽133底部地形成於該限位槽133的圓角處的流道136,藉由該限位槽133的圓角處的流道136 能讓該處理液能更容易地流過,以增加該處理液在該承載治具10內的流動性。另外,在此變化的實施例中,該限位槽133的該第二槽部133b所佔的深度比例較大,並且,該第二槽部133b沿其深度方向擴大的坡度較緩,也就是說,所述限位槽133的頂部開口處的斜角較小。 In addition, in the first embodiment, the limiting slot 133 of each first supporting structure 131 has a first slot portion 133a farther away from the bump top surface 132a, and a first slot portion 133a is coupled to the first slot portion 133a. The second groove portion 133b between the top surfaces 132a of the bumps has a uniform cross-sectional dimension of the first groove portion 133a toward the top surface 132a of the bump, and the second groove portion 133b faces the direction of the top surface 132a of the bump. The cross-sectional size is gradually enlarged from the junction with the first groove portion 133a toward the junction with the bump top surface 132a. In other words, the top opening of the limiting groove 133 has an oblique angle which gradually increases toward the outer direction, and the angle of the oblique angle is 15 degrees in the first embodiment, but is not limited thereto. Thereby, the corners of the wafers 3 can be more easily placed in the limiting grooves 133, so that the wafers 3 can be placed on the supporting unit 13 of the first carrier 1 more easily and smoothly. In addition, with reference to FIG. 9 and FIG. 10 , in a modified embodiment, each of the first supporting structures 131 further has a limiting groove 133 formed from the top of the limiting slot 133 to the bottom of the limiting slot 133 . The flow path 136 at the rounded corner, through the flow path 136 at the rounded corner of the limiting groove 133 The treatment liquid can be more easily flowed to increase the fluidity of the treatment liquid in the load-bearing jig 10. In addition, in the embodiment of the variation, the second groove portion 133b of the limiting groove 133 occupies a large depth ratio, and the second groove portion 133b has a gentle slope along the depth direction thereof, that is, It is said that the oblique angle at the top opening of the limiting groove 133 is small.
參閱圖4至6及圖11,該第二承載件2能與該第一承載件1相配合且可拆離地設於該第一承載件1,該第二承載件2包括一第二片體21、多個第二沖洗孔22,以及多個限位單元23。所述第二片體21大致呈矩形,但不以此為限。另外,在本第一實施例中該第一承載件1是以不鏽鋼材質製成,但不以此為限。該第二片體21具有位於相反側的一第二內側面211及一第二外側面212,該第二內側面211與該第一承載件1的第一內側面111相間隔地彼此相對,該等第二沖洗孔22分別對應於該等第一沖洗孔12且自該第二內側面211貫穿至第二外側面212地形成於該第二片體21,且該等第二沖洗孔22的孔截面大於晶片3的頂面32。該等限位單元23分別設於該等第二沖洗孔22且適用於供該等晶片3的頂面32靠抵,每一限位單元23具有多個自對應的第二沖洗孔22的孔壁面朝該第二沖洗孔22的中央處延伸而成的限位凸條231,以及一個連接於該等限位凸條231的末端之間且較該第二內側面211突出並成圓形柱狀的限位柱232,該限位柱232適用於供該等晶片3的頂面32靠抵,在一變化實施例中,該限位柱232接觸該晶片3的接觸面的邊緣具有導圓角,以防止該限位柱232刮傷該晶片3。在本第一實施例中,該等限位凸條231是自對應的第二沖洗孔22的四個邊緣處延伸出。但配合參閱圖12及圖13,在另一變化實施例中,該等限位凸條231也可以是自 對應的第二沖洗孔22的四個邊角處朝該第二沖洗孔22的中央處延伸而成,且在此變化實施例中,該限位柱232呈與該晶片3的封膠區域313(見圖1)相對應的矩形柱狀,且該限位柱232還形成有一沿該限位柱232的柱體延伸方向貫穿地形成於該限位柱232且與該晶片3的散熱區域312(見圖1)相對應的通孔232a,以在當該晶片3上下顛倒地反面置放且該晶片3的底面承靠於對應的限位單元23時,避免該限位柱232刮傷該晶片3的接腳區域311與散熱區域312(見圖1),且該通孔232a還能供該處理液流過,以增加該處理液的流動性。 Referring to FIGS. 4 to 6 and FIG. 11 , the second carrier 2 can be detachably disposed on the first carrier 1 and detachably disposed on the first carrier 1 , and the second carrier 2 includes a second piece. The body 21, the plurality of second flushing holes 22, and the plurality of limiting units 23. The second sheet 21 is substantially rectangular, but is not limited thereto. In addition, in the first embodiment, the first carrier 1 is made of stainless steel, but is not limited thereto. The second inner body 21 has a second inner side surface 211 and a second outer side surface 212 opposite to each other, and the second inner side surface 211 is opposite to the first inner side surface 111 of the first carrier 1 . The second flushing holes 22 are respectively formed in the second sheet body 21 corresponding to the first flushing holes 12 and penetrate from the second inner side surface 211 to the second outer side surface 212, and the second flushing holes 22 The hole section is larger than the top surface 32 of the wafer 3. The limiting units 23 are respectively disposed in the second flushing holes 22 and are adapted to be abutted against the top surface 32 of the wafers 3, and each of the limiting units 23 has a plurality of holes from the corresponding second flushing holes 22 a limiting rib 231 extending from a wall toward the center of the second rinsing hole 22, and a connecting portion between the ends of the limiting ribs 231 and protruding from the second inner side surface 211 and forming a circular column a limiting post 232, the limiting post 232 is adapted to be abutted against the top surface 32 of the wafer 3. In a variant embodiment, the limiting post 232 contacts the edge of the contact surface of the wafer 3 with a conducting circle An angle to prevent the limit post 232 from scratching the wafer 3. In the first embodiment, the limiting ribs 231 extend from the four edges of the corresponding second rinsing holes 22. However, with reference to FIG. 12 and FIG. 13 , in another variant embodiment, the limiting ribs 231 may also be The four corners of the corresponding second rinsing hole 22 extend toward the center of the second rinsing hole 22, and in the modified embodiment, the limiting post 232 is in the sealing area 313 with the wafer 3. (See FIG. 1) a corresponding rectangular column shape, and the limiting post 232 is further formed with a heat dissipation region 312 formed in the limiting post 232 and extending along the column extending direction of the limiting post 232. (See FIG. 1) the corresponding through hole 232a is prevented from being scratched when the wafer 3 is placed upside down on the reverse side and the bottom surface of the wafer 3 is supported by the corresponding limiting unit 23. The pin area 311 of the wafer 3 and the heat dissipation area 312 (see FIG. 1), and the through hole 232a can also flow the processing liquid to increase the fluidity of the processing liquid.
配合參閱圖14與圖15,當所述晶片3設置於該第一承載件1,且容置於該第一承載件1的支撐單元13與該第二承載件2的限位單元23之間時,孔截面大於晶片3的該第一承載件1的第一沖洗孔12與該第二承載件2的第二沖洗孔22使所述晶片3的邊緣與邊角處顯露於該承載治具10,也就是說該第一承載件1與該第二承載件2能供該處理液穿透並沖洗所述晶片3的側面33,如此可使該處理液對所述晶片3的側面33上的金屬濺灑物進行完整的咬蝕,進而有效地去除所述晶片3上的金屬濺灑物,需說明的是,雖然在本第一實施例中該等第一沖洗孔12與該等第二沖洗孔22概呈正方形,但在其他實施態樣中,該等第一沖洗孔12與該等第二沖洗孔22亦可以呈圓形或長方形等其他形狀。此外,在本第一實施例中,該承載治具10是適用於供該等晶片3鬆配合地設置於該等支撐單元13與該等限位單元23之間。也就是說,所述晶片3與所述支撐單元13的限位槽133的槽壁面具有一間隙,且當所述晶片3被所述支撐單元13的支撐部134b所支撐時,所述晶片3與所述限位單元23的限位柱232也具有一間隙,以使所述晶片 3能夠在所述支撐單元13與限位單元23之間進行上下方向、左右方向與前後方向的晃動,以使該處理液能夠在所述晶片3晃動時更完整地接觸所述晶片3的表面,同時也增加該處理液在該承載治具10內的流動性。此外,參閱圖15,當所述晶片3設於所述支撐單元13時,所述晶片3的頂面12是高於該限位槽133的該第一槽部133a與該第二槽部133b的交界處,如此可使晶片3更容易地被置於所述支撐單元13內,但不以此為限。 Referring to FIG. 14 and FIG. 15 , when the wafer 3 is disposed on the first carrier 1 and is disposed between the supporting unit 13 of the first carrier 1 and the limiting unit 23 of the second carrier 2 When the hole section is larger than the first rinsing hole 12 of the first carrier 1 of the wafer 3 and the second rinsing hole 22 of the second carrier 2, the edge and the corner of the wafer 3 are exposed to the bearing fixture. 10, that is, the first carrier 1 and the second carrier 2 can allow the processing liquid to penetrate and rinse the side 33 of the wafer 3, so that the processing liquid can be applied to the side 33 of the wafer 3. The metal spatter is subjected to a complete bite, thereby effectively removing the metal spatter on the wafer 3. It should be noted that although in the first embodiment, the first flushing holes 12 and the first The two flushing holes 22 are substantially square, but in other embodiments, the first flushing holes 12 and the second flushing holes 22 may have other shapes such as a circle or a rectangle. In addition, in the first embodiment, the bearing fixture 10 is adapted to be disposed between the supporting units 13 and the limiting units 23 in a loose fit. That is, the wafer 3 has a gap with the groove wall of the limiting groove 133 of the supporting unit 13, and when the wafer 3 is supported by the supporting portion 134b of the supporting unit 13, the wafer 3 There is also a gap with the limiting post 232 of the limiting unit 23 to make the wafer 3, the vertical direction, the left-right direction, and the front-rear direction can be shaken between the support unit 13 and the limiting unit 23, so that the processing liquid can more completely contact the surface of the wafer 3 when the wafer 3 is shaken. At the same time, the fluidity of the treatment liquid in the load-bearing jig 10 is also increased. In addition, referring to FIG. 15, when the wafer 3 is disposed on the supporting unit 13, the top surface 12 of the wafer 3 is higher than the first groove portion 133a and the second groove portion 133b of the limiting groove 133. The junction of the wafer 3 can be placed in the support unit 13 more easily, but not limited thereto.
另外,參閱圖3、圖4及圖15,在本第一實施例中,該第一承載件1還包括多個分別形成於該第一片體11的第一內側面111的邊角處且概呈L型的墊塊14,且每一墊塊14上貫穿地形成有多個平行於該第一內側面111且彼此垂直交錯連通的排液通道141。該等墊塊14用以支撐於該第二承載件2的第二內側面211,以維持該第一承載件1與該第二承載件2之間的平整度,且使該第一承載件1的第一內側面111與該第二承載件2的第二內側面211之間具有一間隙地支撐與該第一承載件1與該第二承載件2之間,也就是說,該等墊塊14使該第二承載件2的該第二內側面211與該第一承載件1的第一內側面111相間隔地彼此相對。所述間隙能夠使處理液不容易滯留於該第一承載件1的第一內側面111與該第二承載件2的第二內側面211之間,並且還能供一橫向氣流通過,以使該第一承載件1的第一內側面111與該第二承載件2的第二內側面211之間的處理液能被該氣流帶走,該橫向氣流舉例來說可是由一液切風刀裝置提供。需要說明的是,該第一承載件1的支撐單元13的凸塊132也具有使該第一承載件1與該第二承載件2之間具有間隙的功能,因此,在一變化實施例中,該承載治具10的 第一承載件1也可以不具有該等墊塊14,且在另一變化實施例中,該等墊塊14也可以是形成於第二承載件2的第二內側面211上,不以此為限制。而該等墊塊14的排液通道141能藉由該處理液的附著力與內聚力的特性聚集該處理液,且聚集於該等排液通道141的處理液能夠較容易地被上述橫向氣流吹離該承載治具10,以避免該處理液滯留於該等墊塊14與第二承載件2的第二內側面211之間。此外,在本第一實施例中,該第二承載件2還包括多個形成於該第二片體21且自該第二內側面211貫穿至該第二外側面212的穿孔24,該等穿孔24分布於該等第二沖洗孔22的外圍區域,該等穿孔24亦有助於供氣流通過以及排出處理液。 In addition, referring to FIG. 3 , FIG. 4 and FIG. 15 , in the first embodiment, the first carrier 1 further includes a plurality of corners respectively formed on the first inner side surface 111 of the first sheet 11 and The L-shaped spacers 14 are formed, and each of the spacers 14 is formed with a plurality of drainage channels 141 which are parallel to the first inner side surface 111 and are vertically intersected with each other. The spacers 14 are supported on the second inner side surface 211 of the second carrier 2 to maintain the flatness between the first carrier 1 and the second carrier 2, and the first carrier is Between the first inner side surface 111 of the first carrier member 1 and the second inner side surface 211 of the second carrier member 2, a gap is supported between the first carrier member 1 and the second carrier member 2, that is, The spacer 14 causes the second inner side 211 of the second carrier 2 to face each other at a distance from the first inner side 111 of the first carrier 1. The gap can prevent the treatment liquid from being easily retained between the first inner side surface 111 of the first carrier 1 and the second inner side surface 211 of the second carrier 2, and can also pass a lateral airflow to enable The treatment liquid between the first inner side surface 111 of the first carrier member 1 and the second inner side surface 211 of the second carrier member 2 can be carried away by the air flow, and the lateral air flow can be, for example, a liquid air cutter. The device is provided. It should be noted that the protrusion 132 of the supporting unit 13 of the first carrier 1 also has a function of providing a gap between the first carrier 1 and the second carrier 2, and therefore, in a variant embodiment , the bearing fixture 10 The first carrier 1 may not have the spacers 14 , and in another variant embodiment, the spacers 14 may also be formed on the second inner side surface 211 of the second carrier 2 without For the limit. The liquid discharge passages 141 of the spacers 14 can collect the treatment liquid by the adhesion and cohesive force characteristics of the treatment liquid, and the treatment liquid collected in the liquid discharge passages 141 can be easily blown by the lateral air flow. The jig 10 is carried away to prevent the treatment liquid from remaining between the spacers 14 and the second inner side surface 211 of the second carrier 2. In addition, in the first embodiment, the second carrier 2 further includes a plurality of through holes 24 formed in the second body 21 and extending from the second inner side surface 211 to the second outer side surface 212. Perforations 24 are distributed in the peripheral regions of the second rinsing holes 22, which also facilitate the passage of the gas stream and the discharge of the treatment liquid.
另外,該等墊塊14其中三者各自形成有一定位孔142,該第二承載件2還包括多個形成於該第二片體21的第二內側面211的定位柱25,該等定位柱25分別對應穿設於該等定位孔142。以使該第二承載件2能夠被定位於該第一承載件1,並且由於該等墊塊14中僅其中三者形成有定位孔142,如此也能確保使用者不會以錯誤的方向將該第二承載件2設於該第一承載件1上。另外,在本第一實施例中,該第一承載件1還包括兩個分別形成於該第一片體11的兩相鄰邊角處的第一缺角部15,該第一承載件1還包括兩個形成於該第二片體21且分別與該等第一缺角部15相對應的第二缺角部26,藉由該第一缺角部15與該第二缺角部26能夠使該承載治具10設於例如一運送機器(圖未示)時,避免設置方向錯誤的情況發生。 In addition, each of the pads 14 is formed with a positioning hole 142, and the second carrier 2 further includes a plurality of positioning posts 25 formed on the second inner side surface 211 of the second body 21, and the positioning posts 25 respectively corresponding to the positioning holes 142. In order to enable the second carrier 2 to be positioned on the first carrier 1, and since only three of the spacers 14 are formed with positioning holes 142, this also ensures that the user will not be in the wrong direction. The second carrier 2 is disposed on the first carrier 1 . In addition, in the first embodiment, the first carrier 1 further includes two first corner portions 15 respectively formed at two adjacent corners of the first body 11, the first carrier 1 Further comprising two second corner portions 26 formed on the second sheet 21 and corresponding to the first corner portions 15 respectively, the first corner portion 15 and the second corner portion 26 When the carrying jig 10 is provided, for example, in a transporting machine (not shown), it is possible to avoid the occurrence of an erroneous setting.
再者,一般而言,該等晶片3在轉移至該承載治具10之前是以一 載盤(圖未示)容置,該第一承載件1是與該載盤相對應,並且在本第一實施例中,該第一承載件1還具有多個形成於該第一片體11的第一定位孔142,該等第一定位孔142用以與所述載盤的定位柱25(圖未示)配合。因此,使用者能夠以手動方式將該第一承載件1蓋設於裝有該等晶片3的該載盤上,並上下翻轉該第一承載件1與該載盤,就能快速的將該載盤上的晶片3分別置於該第一承載件1的該等支撐單元13上,並且,適用於供該等晶片3鬆配合地設置於該等支撐單元13也有助於上述方法的執行。 Furthermore, in general, the wafers 3 are one prior to being transferred to the carrier fixture 10. a carrier (not shown) is received, the first carrier 1 is corresponding to the carrier, and in the first embodiment, the first carrier 1 further has a plurality of the first carrier The first positioning holes 142 of the first positioning holes 142 are matched with the positioning posts 25 (not shown) of the carrier. Therefore, the user can manually cover the first carrier 1 on the carrier plate on which the wafers 3 are mounted, and flip the first carrier 1 and the carrier upside down, and the user can quickly The wafers 3 on the carrier are placed on the support units 13 of the first carrier 1, respectively, and the application of the wafers 3 to the support units 13 in a loose fit also contributes to the execution of the above method.
此外,該第二承載件2還具有多個形成於該第二片體21的第二定位孔142,該等第二定位孔142是與一抓取裝置(圖未示)相配合,以助於該抓取裝置抓取該第二承載件2。 In addition, the second carrier 2 has a plurality of second positioning holes 142 formed in the second body 21, and the second positioning holes 142 are matched with a grasping device (not shown). The second carrier 2 is grasped by the gripping device.
參閱圖16至圖18,本新型承載治具10之一第二實施例大致與該第一實施例相同,但不同的地方在於,本第二實施例的每一第二支撐結構130還具有四個分別連接於相鄰的支撐凸條134的延伸部134a的末端之間的防脫柱135。配合參閱圖19至圖21,該等防脫柱135共同構成一口字型的結構,該防脫柱135能夠進一步防止該等晶片3傾斜時脫離該第一承載件1,且該等防脫柱135的位置不遮擋所述晶片3的邊緣以及其側面33處,且該等防脫柱135的位置對應於晶片3的封膠區域313,以使該處理液能夠流暢地通過以沖洗所述晶片3的側面33。並且,該等防脫柱135在本第二實施例中是與該第一承載件1的外側面33齊平,以維持該第一承載件1置放於一平面時的平整度。 Referring to FIG. 16 to FIG. 18, a second embodiment of the present type of load bearing fixture 10 is substantially the same as the first embodiment, but the difference is that each second support structure 130 of the second embodiment further has four A detachment prevention post 135 is connected between the ends of the extensions 134a of the adjacent support ribs 134, respectively. Referring to FIG. 19 to FIG. 21, the anti-seismic columns 135 together form a monogram-shaped structure, and the anti-desorption column 135 can further prevent the wafers 3 from being detached from the first carrier 1 when tilted, and the anti-off columns The position of 135 does not block the edge of the wafer 3 and its side surface 33, and the positions of the anti-separation pillars 135 correspond to the sealing region 313 of the wafer 3, so that the processing liquid can smoothly pass to rinse the wafer. Side 33 of 3. Moreover, in the second embodiment, the retaining posts 135 are flush with the outer side surface 33 of the first carrier 1 to maintain the flatness of the first carrier 1 when placed on a plane.
參閱圖22至圖26,本新型承載治具10之一第三實施例大致與該第 二實施例相同,但不同的地方在於,本第三實施例適用於供多個呈長方形板狀的晶片3設置,該第一承載件1的第一沖洗孔12與該第二承載件2的第二沖洗孔22大致呈長方形,且該第一承載件1的支撐單元13亦對應該等晶片3之長方形板狀的外型而形成以支撐該等晶片3。 Referring to FIG. 22 to FIG. 26, a third embodiment of the present type of carrying fixture 10 is substantially identical to the third embodiment. The second embodiment is the same, but the difference is that the third embodiment is applicable to the plurality of wafers 3 having a rectangular plate shape, the first flushing holes 12 of the first carrier 1 and the second carrier 2 The second rinsing hole 22 is substantially rectangular, and the supporting unit 13 of the first carrier 1 is also formed to conform to the rectangular plate-like shape of the wafer 3 to support the wafers 3.
參閱圖27至圖31,本新型承載治具10之一第四實施例大致與該第三實施例相同,但不同的地方在於,本第四實施例中該第二支撐結構130具有四個支撐凸條134、四個防脫柱135,以及四個支撐凸部137,該四個支撐凸條134分別自該四個凸塊132鄰近該第一外側面112處延伸形成,每一支撐凸條134具有一自對應的凸塊132鄰近該第一外側面112處朝對應的第一沖洗孔12的中心延伸而成的延伸部134a,該四個防脫柱135分別連接於相鄰的支撐凸條134的延伸部134a的末端之間,該四個支撐凸部137分別自該四個防脫柱135朝所述凸塊132頂面的方向延伸而成,且每一支撐凸部137的末端具有一對應頂抵晶片3的該封膠區域313的支撐面137a,並且在本第四實施例中,該等支撐面137a是頂抵支撐於該封膠區域313的長邊處,與前述第一至第三實施例中該等支撐面134c(見圖8)頂抵支撐於該封膠區域313的邊角處不同。此外,該等支撐凸部137的末端處具有導圓角,以避免該等支撐凸部137刮傷晶片3。另外,本第四實施例中,該支撐單元13的該等第一支撐結構131亦具有流道136,且該等第一支撐結構131與該第一實施例的其中一變化實施例(見圖9與圖10)大致相同,於此不再贅述。並且,本第四實施例中,該第二承載件2的該等限位單元23與該第一實施例的其中另一變化實施例(見圖12與圖13)大致相同,於此不再贅述。並且, 該第一承載件1的支撐單元13與該第二承載件2的限位單元23多處具有導圓角,以避免鋒利的邊角刮傷晶片3。 Referring to FIG. 27 to FIG. 31, a fourth embodiment of the present type of load bearing fixture 10 is substantially the same as the third embodiment, but the difference is that the second support structure 130 has four supports in the fourth embodiment. a rib 134, four detachment prevention posts 135, and four support protrusions 137 respectively formed from the four protrusions 132 adjacent to the first outer side surface 112, each support rib The 134 has an extending portion 134a extending from the first outer side surface 112 toward the center of the corresponding first flushing hole 12, and the four retaining columns 135 are respectively connected to the adjacent supporting protrusions. Between the ends of the extensions 134a of the strips 134, the four support protrusions 137 extend from the four retaining posts 135 toward the top surface of the bumps 132, and the ends of each of the support protrusions 137 There is a supporting surface 137a corresponding to the sealing region 313 of the wafer 3, and in the fourth embodiment, the supporting surfaces 137a are supported by the long sides of the sealing region 313, and the foregoing In the first to third embodiments, the supporting surfaces 134c (see FIG. 8) are abutted against the sealing area 313. Different corners. In addition, the supporting protrusions 137 have rounded corners at the ends thereof to prevent the supporting protrusions 137 from scratching the wafer 3. In addition, in the fourth embodiment, the first supporting structures 131 of the supporting unit 13 also have a flow path 136, and the first supporting structures 131 and one of the modified embodiments of the first embodiment (see FIG. 9 is substantially the same as FIG. 10) and will not be described again here. Moreover, in the fourth embodiment, the limiting units 23 of the second carrier 2 are substantially the same as the other variation embodiment of the first embodiment (see FIG. 12 and FIG. 13), and no longer Narration. and, The support unit 13 of the first carrier 1 and the limiting unit 23 of the second carrier 2 have rounded corners at multiple locations to avoid sharp edges scratching the wafer 3.
綜上所述,本新型承載治具10,藉由相配合的該第一承載件1的支撐單元13與該第二承載件2的限位單元23容置該等晶片3,且藉由孔截面大於晶片3的該第一承載件1的第一沖洗孔12與該第二承載件2的第二沖洗孔22,使處理液能夠通過並清洗該等晶片3的側面33,以去除該等晶片3的側面33上造成該等接腳34短路的金屬濺灑物。 In summary, the load bearing fixture 10 of the present invention accommodates the wafers 3 by the supporting unit 13 of the first carrier 1 and the limiting unit 23 of the second carrier 2, and the holes are The first rinsing hole 12 of the first carrier 1 and the second rinsing hole 22 of the second carrier 2 are larger in cross section, so that the processing liquid can pass through and clean the side 33 of the wafer 3 to remove the A metal spatter that causes the pins 34 to be shorted is formed on the side 33 of the wafer 3.
惟以上所述者,僅為本新型之實施例而已,當不能以此限定本新型實施之範圍,凡是依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。 However, the above is only the embodiment of the present invention, and when it is not possible to limit the scope of the present invention, all the simple equivalent changes and modifications according to the scope of the patent application and the contents of the patent specification are still This new patent covers the scope.
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821861425.1U CN209071300U (en) | 2018-09-21 | 2018-11-13 | Bearing jig |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107212893 | 2018-09-21 | ||
| ??107212893 | 2018-09-21 |
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| TWM573080U true TWM573080U (en) | 2019-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW107213721U TWM573080U (en) | 2018-09-21 | 2018-10-11 | Loading jig |
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| CN (1) | CN209071300U (en) |
| TW (1) | TWM573080U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI868300B (en) * | 2020-01-29 | 2025-01-01 | 日商迪思科股份有限公司 | Observation fixture |
-
2018
- 2018-10-11 TW TW107213721U patent/TWM573080U/en unknown
- 2018-11-13 CN CN201821861425.1U patent/CN209071300U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI868300B (en) * | 2020-01-29 | 2025-01-01 | 日商迪思科股份有限公司 | Observation fixture |
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