[go: up one dir, main page]

TWI913735B - 積體電路元件及其製造方法 - Google Patents

積體電路元件及其製造方法

Info

Publication number
TWI913735B
TWI913735B TW113116747A TW113116747A TWI913735B TW I913735 B TWI913735 B TW I913735B TW 113116747 A TW113116747 A TW 113116747A TW 113116747 A TW113116747 A TW 113116747A TW I913735 B TWI913735 B TW I913735B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
circuit device
fabricating method
fabricating
integrated
Prior art date
Application number
TW113116747A
Other languages
English (en)
Other versions
TW202536445A (zh
Inventor
黃信華
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US18/602,104 external-priority patent/US20250293099A1/en
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202536445A publication Critical patent/TW202536445A/zh
Application granted granted Critical
Publication of TWI913735B publication Critical patent/TWI913735B/zh

Links

TW113116747A 2024-03-12 2024-05-06 積體電路元件及其製造方法 TWI913735B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18/602,104 2024-03-12
US18/602,104 US20250293099A1 (en) 2024-03-12 2024-03-12 Same-side combined electrical/optical testing at multiple ic device fabrication stages

Publications (2)

Publication Number Publication Date
TW202536445A TW202536445A (zh) 2025-09-16
TWI913735B true TWI913735B (zh) 2026-02-01

Family

ID=

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7544522B2 (en) 2004-06-09 2009-06-09 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
US20170110202A1 (en) 2015-10-15 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Test Line Patterns in Split-Gate Flash Technology
TW202347652A (zh) 2022-05-23 2023-12-01 台灣積體電路製造股份有限公司 半導體封裝體及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7544522B2 (en) 2004-06-09 2009-06-09 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
US20170110202A1 (en) 2015-10-15 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Test Line Patterns in Split-Gate Flash Technology
TW202347652A (zh) 2022-05-23 2023-12-01 台灣積體電路製造股份有限公司 半導體封裝體及其製造方法

Similar Documents

Publication Publication Date Title
TWI799796B (zh) 積體電路和製造積體電路的方法
TWI800416B (zh) 電子封裝件及其製法
TWI799777B (zh) 半導體裝置和其製造方法
TWI800818B (zh) 積體電路元件及其製造方法
TWI800175B (zh) 半導體元件及其製造方法
TWI801234B (zh) 電路結構、半導體元件及其製造方法
TWI913735B (zh) 積體電路元件及其製造方法
TWI801130B (zh) 記憶體元件及其製造方法
EP4383346A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI914242B (zh) 積體電路裝置及積體電路的形成方法
EP4284129A4 (en) ELECTRONIC DEVICE WITH WATERPROOF STRUCTURE AND MANUFACTURING METHOD THEREOF
EP4325579A4 (en) MOSFET COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI913693B (zh) 半導體裝置及其製造方法
TWI913684B (zh) 半導體元件及其製造方法
TWI913587B (zh) 電子裝置及其製造方法
TWI913892B (zh) 半導體元件及其製造方法
EP4480382A4 (en) ELECTRONIC DEVICE AND OPERATING METHOD THEREFOR
TWI913773B (zh) 積體電路結構及其製造方法
TWI914274B (zh) 半導體元件及其製作方法
TWI913846B (zh) 半導體元件及其製作方法
TWI913754B (zh) 記憶體元件及其製造方法
TWI800782B (zh) 電路板結構及其製作方法
TWI800797B (zh) 半導體裝置及其製造方法
TWI799775B (zh) 半導體元件及其製造方法
EP4485129A4 (en) ELECTRONIC DEVICE WITH LOUDSPEAKER AND MANUFACTURING METHOD THEREFOR