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TWI909039B - wafer spacing formation method - Google Patents

wafer spacing formation method

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Publication number
TWI909039B
TWI909039B TW111114874A TW111114874A TWI909039B TW I909039 B TWI909039 B TW I909039B TW 111114874 A TW111114874 A TW 111114874A TW 111114874 A TW111114874 A TW 111114874A TW I909039 B TWI909039 B TW I909039B
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TW
Taiwan
Prior art keywords
wafer
expansion
holding
spacing
holding surface
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TW111114874A
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Chinese (zh)
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TW202242977A (en
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服部篤
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日商迪思科股份有限公司
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Priority claimed from JP2021072523A external-priority patent/JP7674139B2/en
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202242977A publication Critical patent/TW202242977A/en
Application granted granted Critical
Publication of TWI909039B publication Critical patent/TWI909039B/en

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Abstract

[課題]在晶片間良好地形成預定的間隔。[解決手段]晶片間隔形成步驟係藉由從設置於擴張片的下方之保持台的保持面噴出空氣,而降低擴張片與保持面的摩擦。因此,因能容易地將擴張片進行擴張,故可在晶片間良好地形成預定的間隔。[Problem] To achieve a satisfactory predetermined spacing between wafers. [Solution] The wafer spacing formation step reduces friction between the expander and the holding surface by ejecting air from the holding surface of the holding stage located below the expander. Therefore, the expander can be easily expanded, thus achieving a satisfactory predetermined spacing between wafers.

Description

晶片間隔形成方法wafer spacing formation method

本發明係關於一種將擴張片進行擴張,而在構成被加工物之多個晶片之間形成預定的間隔之晶片間隔形成方法。This invention relates to a method for forming wafer spacing by expanding an expander to create a predetermined spacing between multiple wafers constituting a workpiece.

已有一種程序,其將沿著分割預定線在內部形成有斷裂起點之晶圓、或已沿著分割預定線分割成多個晶片之晶圓黏貼於擴張片,並將擴張片進行擴張,藉此增加晶片間隔。There is an existing process that attaches a wafer with a break point formed inside along a predetermined dicing line, or a wafer that has been divided into multiple chips along the predetermined dicing line, to an expander, and expands the expander to increase the chip spacing.

並且,已有一種程序,其將上述的晶圓黏貼於擴張片,所述擴張片層積有被稱作晶粒附接膜(die attach film)之黏著片,並將擴張片進行擴張,藉此增加晶圓的晶片間隔,且將晶粒附接膜因應晶片進行分割。Furthermore, there is a process that attaches the aforementioned wafer to an expansion sheet, the expansion sheet having an adhesive layer called a die attach film, and expands the expansion sheet to increase the wafer spacing, and divides the die attach film according to the wafer.

片擴張裝置具有:框架固定部、吸引保持台、以及配置於吸引保持台的外周之擴張鼓輪。藉由使擴張鼓輪在垂直方向上升,而將擴張片進行擴張,並擴張晶片間隔。之後,為了維持經擴張之晶片間隔,而藉由吸引保持台吸引保持擴張片。 [習知技術文獻] [專利文獻] A wafer expansion apparatus includes: a frame fixing part, a suction and holding stage, and an expansion drum disposed on the outer periphery of the suction and holding stage. By vertically raising the expansion drum, the wafer is expanded, thereby increasing the wafer spacing. Then, to maintain the expanded wafer spacing, the suction and holding stage holds the expanded wafer. [Preferred Art Documents] [Patent Documents]

[專利文獻1]日本特許第6741529號公報 [專利文獻2]日本特開2007-123658號公報 [Patent Document 1] Japanese Patent No. 6741529 [Patent Document 2] Japanese Unexamined Patent No. 2007-123658

[發明所欲解決的課題] 但是,上述的片擴張裝置中,在擴張鼓輪上升時,擴張鼓輪與吸引保持台配置於幾乎同一平面。因此,因在擴張片中對應晶片之中央區域與吸引保持台的保持面之間會產生摩擦,故難以將擴張片的中央區域充分地進行擴張。 [Problem to be Solved by the Invention] However, in the aforementioned wafer expansion apparatus, when the expansion drum rises, the expansion drum and the suction holding stage are positioned on almost the same plane. Therefore, friction occurs between the central region of the wafer and the holding surface of the suction holding stage, making it difficult to adequately expand the central region of the wafer.

因此,本發明之目的在於提供一種在晶片間良好地形成預定的間隔之晶片間隔形成方法。Therefore, the purpose of this invention is to provide a method for forming a wafer spacer that effectively forms a predetermined spacing between wafers.

[解決課題的技術手段] 根據本發明,提供一種晶片間隔形成方法,其在構成被加工物之多個晶片間形成預定的間隔,所述被加工物透過擴張片而支撐於環狀框架的開口,所述晶片間隔形成方法具備:晶片間隔形成步驟,其在藉由從設置於該擴張片的下方之保持台的保持面噴出空氣而降低該擴張片與該保持面的摩擦之狀態下,將該擴張片進行擴張,而在該晶片間形成預定的間隔;以及收縮步驟,其在實施該晶片間隔形成步驟之後,在藉由該保持台的該保持面而吸引保持該擴張片的對應該晶片之區域且維持該晶片彼此的間隔之狀態下,藉由將該環狀框架的內周緣與被加工物的外周緣之間的該擴張片的部分進行加熱,而使此部分收縮。 [Technical Means for Solving the Problem] According to the present invention, a method for forming wafer spacers is provided, which forms predetermined spacers between a plurality of wafers constituting a workpiece, said workpiece being supported by an expansion lamination at an opening of a ring frame. The wafer spacer forming method comprises: a wafer spacer forming step in which, under conditions where air is ejected from the holding surface of a holding stage disposed below the expansion lamination to reduce friction between the expansion lamination and the holding surface, the wafer spacers are formed... The expansion wafer expands to form a predetermined gap between the wafers; and a shrinkage step, following the wafer gap formation step, involves heating a portion of the expansion wafer between the inner periphery of the annular frame and the outer periphery of the workpiece to shrink the wafer while the area corresponding to the wafer is held by the holding surface of the holding stage and the gap between the wafers is maintained.

[發明功效] 本發明的晶片間隔形成方法中,在晶片間隔形成步驟中,藉由從設置於擴張片的下方之保持台的保持面噴出空氣,而降低擴張片與保持面的摩擦。因此,因能容易地將擴張片的對應晶片之區域進行擴張,故可在晶片間良好地形成預定的間隔。 [Invention Benefits] In this invention's wafer spacing formation method, during the wafer spacing formation step, air is ejected from the holding surface of a holding stage disposed below the expander wafer, thereby reducing friction between the expander wafer and the holding surface. Therefore, since the area corresponding to the wafer on the expander wafer can be easily expanded, a predetermined spacing can be well formed between the wafers.

本發明實施方式之晶片間隔方法中,作為被加工物,使用如圖1所示般之晶圓100。晶圓100具有圓形狀,且在正面形成有網格狀的分割預定線103。在藉由分割預定線103所劃分之各區域形成有元件101。In the wafer spacing method of this invention, a wafer 100 as shown in FIG1 is used as the workpiece. The wafer 100 has a circular shape and a grid-like dicing pre-line 103 is formed on its front side. Components 101 are formed in each area divided by the dicing pre-line 103.

在本實施方式中,晶圓100係在框架單元110的狀態下被處理。框架單元110係藉由以擴張片113使環狀框架111與晶圓100一體化而形成,所述環狀框架111具有能容納晶圓100的開口112,所述晶圓100定位於環狀框架111的開口112。如此,在本實施方式中,晶圓100透過擴張片113而支撐於環狀框架111的開口112。In this embodiment, the wafer 100 is processed in the form of a frame unit 110. The frame unit 110 is formed by integrating an annular frame 111 with the wafer 100 using an expansion piece 113. The annular frame 111 has an opening 112 that can accommodate the wafer 100, and the wafer 100 is positioned within the opening 112 of the annular frame 111. Thus, in this embodiment, the wafer 100 is supported by the opening 112 of the annular frame 111 via the expansion piece 113.

接著,針對本實施方式之晶片間隔方法的各步驟進行說明。此晶片間隔形成方法係用於在構成晶圓100之多個晶片間形成預定的間隔之方法。Next, the steps of the wafer spacing method of this embodiment will be explained. This wafer spacing forming method is used to form a predetermined spacing between multiple wafers constituting a wafer 100.

[改質層形成步驟] 在此步驟中,如圖2所示,使用雷射照射器200,沿著晶圓100的分割預定線103照射雷射光線201。藉此,在晶圓100的內部,沿著分割預定線103形成成為斷裂起點之弱強度的改質層202。其結果,藉由改質層202而將晶圓100劃分成分別包含一個元件101之多個晶片120。 [Modifier Layer Formation Step] In this step, as shown in Figure 2, a laser irradiator 200 is used to irradiate laser light 201 along the dicing pre-defined lines 103 of the wafer 100. This forms a weak-intensity modifier layer 202, acting as a breakage initiation point, inside the wafer 100 along the dicing pre-defined lines 103. As a result, the modifier layer 202 divides the wafer 100 into multiple wafers 120, each containing an element 101.

[晶片間隔形成步驟] 在此步驟中,藉由擴張框架單元110的擴張片113,而在晶片100的晶片120間形成預定的間隔。 [Wafer Spacing Formation Step] In this step, a predetermined spacing is formed between the wafers 120 of the wafer 100 using the expansion piece 113 of the expansion frame unit 110.

在此步驟中,使用圖3及圖4所示之片擴張裝置4。如圖3所示,此片擴張步驟4具備有矩形狀的基台40。在此基台40的上表面配設有保持框架單元110的環狀框架111之框架保持部5。In this step, the sheet expansion device 4 shown in Figures 3 and 4 is used. As shown in Figure 3, this sheet expansion step 4 has a rectangular base 40. A frame holding part 5 of the annular frame 111 of the holding frame unit 110 is provided on the upper surface of this base 40.

此框架保持構件5具有:筒狀基座51,其配設於基台40的上表面;以及作為框架固定部之四個夾具52,其等配設於此筒狀基座51的上端部外周。筒狀基座51的上表面發揮作為用於載置框架單元110的環狀框架111之載置面511的功能。載置於載置面511上之環狀框架111係藉由夾具52而固定於筒狀基座51。如此進行,框架保持構件5可保持包含環狀框架111及晶圓100之框架單元110。The frame retaining member 5 includes: a cylindrical base 51 disposed on the upper surface of the base 40; and four clamps 52 serving as frame fixing parts, disposed on the outer periphery of the upper end of the cylindrical base 51. The upper surface of the cylindrical base 51 functions as a mounting surface 511 for mounting the annular frame 111 of the frame unit 110. The annular frame 111, mounted on the mounting surface 511, is fixed to the cylindrical base 51 by means of the clamps 52. In this way, the frame retaining member 5 can hold the frame unit 110, which includes the annular frame 111 and the wafer 100.

在框架保持構件5的筒狀基座51內,配設有將裝設於環狀框架111之擴張片113進行擴張之片擴張機構6。此片擴張機構6具備:保持台62,其保持晶圓100;擴張鼓輪61,其以從下方將保持台62進行保持之方式配置;以及移動構件63,其使擴張鼓輪61及保持台62沿著Z軸方向移動。Within the cylindrical base 51 of the frame holding member 5, a wafer expansion mechanism 6 is provided for expanding the expansion wafer 113 mounted on the annular frame 111. This wafer expansion mechanism 6 includes: a holding stage 62 for holding the wafer 100; an expansion drum 61 configured to hold the holding stage 62 from below; and a moving member 63 for moving the expansion drum 61 and the holding stage 62 along the Z-axis.

保持台62將保持於框架保持構件5之保持框架單元110的晶圓100進行保持。保持台62具有圓板狀的本體621及配置於本體621上之保持面(吸附卡盤)622。如圖4所示,保持面622以覆蓋設於本體621之本體通氣路徑623之方式配設於本體621的上表面。The holding stage 62 holds the wafer 100 held in the holding frame unit 110 of the frame holding member 5. The holding stage 62 has a circular plate-shaped body 621 and a holding surface (adsorption chuck) 622 disposed on the body 621. As shown in FIG4, the holding surface 622 is disposed on the upper surface of the body 621 in such a way as to cover the body ventilation path 623 disposed on the body 621.

保持面622具有通氣性,藉由連通圖4所示之吸引源637而將擴張片113中之貼附有晶圓100之區域亦即晶圓貼附區域131(參閱圖1)進行吸引保持。亦即,保持台62可藉由保持面622而透過擴張片113將晶圓100進行吸引保持。並且,保持面622被構成為藉由連通圖4所示之空氣源638而噴出預定量(例如微量)的空氣。The holding surface 622 is permeable, and by connecting to the suction source 637 shown in FIG. 4, it attracts and holds the area of the wafer 100 attached to the expansion sheet 113, namely the wafer attachment area 131 (see FIG. 1). That is, the holding stage 62 can attract and hold the wafer 100 through the expansion sheet 113 by means of the holding surface 622. Furthermore, the holding surface 622 is configured to eject a predetermined amount (e.g., a small amount) of air by means of the air source 638 shown in FIG. 4.

具有如此構成之保持台62被支撐於擴張鼓輪61。如圖3所示,擴張鼓輪61具有:被形成為環狀之周壁611、及覆蓋周壁611的下表面之圓形狀的底壁612。在底壁612的中央設有貫通底壁612之穴614。並且,在周壁611的上端配設有多個擴張輔助輥613。如圖4所示,擴張輔助輥613的上表面配置於與保持台62的保持面622大致同一高度。The retaining platform 62, configured as described above, is supported by the expanding drum 61. As shown in FIG3, the expanding drum 61 has an annular peripheral wall 611 and a circular bottom wall 612 covering the lower surface of the peripheral wall 611. A cavity 614 penetrating the bottom wall 612 is provided in the center of the bottom wall 612. Furthermore, a plurality of expanding auxiliary rollers 613 are arranged at the upper end of the peripheral wall 611. As shown in FIG4, the upper surface of the expanding auxiliary rollers 613 is positioned at approximately the same height as the retaining surface 622 of the retaining platform 62.

保持台62的本體621係藉由擴張鼓輪61的周壁611而大致無間隙地覆蓋周圍,且被支撐於擴張鼓輪61的底壁612上。The main body 621 of the retaining platform 62 is covered around it almost without gaps by the peripheral wall 611 of the expanding drum 61 and is supported on the bottom wall 612 of the expanding drum 61.

擴張鼓輪61被支撐於移動構件63。移動構件63係由氣缸機構所構成,並具有:活塞基台630;活塞桿631,其被設置成相對於活塞基台630能在Z軸方向移動;以及圓形狀的支撐基台632,其設於活塞桿631的上端。支撐基台632從下方支撐擴張鼓輪61的底壁612。The expansion drum 61 is supported by a moving member 63. The moving member 63 is a cylinder mechanism and includes: a piston base 630; a piston rod 631, which is configured to move relative to the piston base 630 in the Z-axis direction; and a circular support base 632, which is located at the upper end of the piston rod 631. The support base 632 supports the bottom wall 612 of the expansion drum 61 from below.

因此,移動構件63中,藉由將活塞桿631在Z軸方向移動,而變得能使擴張鼓輪61及保持台62在Z軸方向移動。Therefore, in the moving component 63, by moving the piston rod 631 in the Z-axis direction, the expansion drum 61 and the holding platform 62 can be moved in the Z-axis direction.

在支撐基台632的中心設有連接管635。連接管635貫通擴張鼓輪61的底壁612的穴614(參閱圖3)及保持台62的本體621的中央。如此,保持台62與擴張鼓輪61在藉由同一連接管635而貫通中央之狀態下,被移動構件63的支撐基台632支撐。A connecting pipe 635 is provided at the center of the support base 632. The connecting pipe 635 passes through the cavity 614 (see Figure 3) of the bottom wall 612 of the expansion drum 61 and the center of the body 621 of the retaining platform 62. In this way, the retaining platform 62 and the expansion drum 61 are supported by the support base 632 of the moving component 63 while being connected to the center by the same connecting pipe 635.

並且,如圖4所示,在連接管635及活塞桿631設有空氣通路636。此空氣通路636的一端係透過連接管635及保持台62的本體通氣路徑623而連接於保持台62的保持面622。並且,空氣通路636的另一端係透過活塞桿631及切換閥639而連接於空氣源638及吸引源637。Furthermore, as shown in Figure 4, an air passage 636 is provided in the connecting pipe 635 and the piston rod 631. One end of this air passage 636 is connected to the holding surface 622 of the holding platform 62 through the connecting pipe 635 and the main body ventilation path 623 of the holding platform 62. Furthermore, the other end of the air passage 636 is connected to the air source 638 and the suction source 637 through the piston rod 631 and the switching valve 639.

亦即,保持台62的保持面622係透過此空氣通路636而能連通吸引源637或空氣源638。That is, the retaining surface 622 of the retaining platform 62 is connected to the suction source 637 or the air source 638 through this air passage 636.

並且,如圖3所示,片擴張裝置4具備:加熱構件8,其用於將保持於框架保持構件5之框架單元110的擴張片113進行加熱。Furthermore, as shown in Figure 3, the sheet expansion device 4 includes a heating component 8, which is used to heat the expansion sheet 113 of the frame unit 110 held in the frame holding component 5.

加熱構件8具有:紅外線加熱器81;支撐桿82,其支撐紅外線加熱器81;以及轉動構件83,其轉動支撐桿82。紅外線加熱器81被形成為與擴張片113中之收縮區域132(參閱圖1)大致對應大小的環狀。此收縮區域132係擴張片113中之晶圓貼附區域131與環狀框架111之間的區域,亦即,環狀框架111的內周緣與晶圓100的外周緣之間的擴張片113的部分。The heating component 8 includes: an infrared heater 81; a support rod 82 supporting the infrared heater 81; and a rotating component 83 rotating the support rod 82. The infrared heater 81 is formed as an annular shape that substantially corresponds to the size of the contraction region 132 (see FIG. 1) in the expander 113. This contraction region 132 is the region between the wafer attachment region 131 in the expander 113 and the annular frame 111, that is, the portion of the expander 113 between the inner periphery of the annular frame 111 and the outer periphery of the wafer 100.

轉動構件83使紅外線加熱器81在撤離位置(圖3所示之位置)與加熱位置之間轉動。加熱位置係框架保持構件5所保持之框架單元110的擴張片113中之收縮區域132的上方的位置。Rotate component 83 to rotate the infrared heater 81 between the retraction position (the position shown in Figure 3) and the heating position. The heating position is the position above the contraction area 132 in the expansion plate 113 of the frame unit 110 held by the frame retaining component 5.

並且,片擴張裝置4具備控制部17。控制部17藉由控制片擴張裝置4的各構件的動作,而實施晶片間隔形成步驟。Furthermore, the wafer expansion device 4 includes a control unit 17. The control unit 17 performs the wafer spacing formation step by controlling the operation of each component of the wafer expansion device 4.

以下,針對使用此種片擴張裝置4之晶片間隔形成步驟進行說明。The following describes the chip spacing formation steps using this chip expansion device 4.

在此步驟中,如圖5所示,例如操作者將框架單元110的環狀框架111載置於框架保持構件5中之筒狀基座51的載置面511上,並藉由夾具52固定於筒狀基座51(框架保持步驟)。In this step, as shown in Figure 5, for example, the operator places the annular frame 111 of the frame unit 110 on the placement surface 511 of the cylindrical base 51 in the frame retaining member 5, and fixes it to the cylindrical base 51 by means of the clamp 52 (frame retaining step).

此時,控制部17控制移動構件63,先使活塞桿631移動至下方側,藉此如圖5所示,將保持台62的保持面622及擴張鼓輪61的擴張輔助輥613配置於比框架單元110的擴張片113更下方。At this time, the control unit 17 controls the moving component 63 to move the piston rod 631 to the lower side, thereby positioning the holding surface 622 of the holding platform 62 and the expansion auxiliary roller 613 of the expansion drum 61 below the expansion plate 113 of the frame unit 110, as shown in FIG. 5.

再者,控制部17控制切換閥639,使保持台62的保持面622透過空氣通路636而連通空氣源638。藉此,如圖5中使用箭頭301所示,從設置於擴張片113的下方之保持台62的保持面622噴出空氣。Furthermore, the control unit 17 controls the switching valve 639 to connect the holding surface 622 of the holding platform 62 to the air source 638 through the air passage 636. Thereby, as shown by arrow 301 in FIG5, air is ejected from the holding surface 622 of the holding platform 62 located below the expansion plate 113.

接著,控制部17在已從保持面622噴出空氣之狀態下,控制移動構件63,如圖6中藉由箭頭401所示,使活塞桿631移動至上方側。藉此,如圖6所示,控制部17以擴張鼓輪61的擴張輔助輥613及保持台62的保持面622位於比筒狀基座51的載置面511更上方之方式,使擴張鼓輪61及保持台62上升至預定的擴張位置為止。Next, with air already ejected from the holding surface 622, the control unit 17 controls the moving component 63 to move the piston rod 631 to the upper side, as indicated by arrow 401 in Figure 6. Thus, as shown in Figure 6, the control unit 17 raises the expansion drum 61 and the holding platform 62 to the predetermined expansion position by positioning the expansion auxiliary roller 613 of the expansion drum 61 and the holding surface 622 of the holding platform 62 above the mounting surface 511 of the cylindrical base 51.

藉此,擴張鼓輪61的擴張輔助輥613會抵接擴張片113,而將擴張片113往上推起。藉此,擴張片被擴張(片擴張步驟)。其結果,拉伸力會放射狀地作用在貼附於擴張片113之晶圓100。藉由如此拉伸力放射狀地作用在晶圓100,晶圓100會沿著沿分割預定線103所形成之改質層202而斷裂並被分離成一個個晶片120,且在相鄰之晶片120之間形成預定的間隔。In this way, the expansion auxiliary roller 613 of the expansion drum 61 abuts against the expansion wafer 113, pushing the expansion wafer 113 upward. Thus, the expansion wafer is expanded (wafer expansion step). As a result, tensile force acts radially on the wafer 100 attached to the expansion wafer 113. Because of this radial tensile force acting on the wafer 100, the wafer 100 breaks along the modified layer 202 formed along the predetermined dicing line 103 and is separated into individual wafers 120, forming a predetermined spacing between adjacent wafers 120.

此外,在此片擴張步驟中,與擴張輔助輥613的上表面大致相同高度地配置之保持台62的保持面622亦接觸擴張片133。關於此點,本實施方式中,藉由從保持面622噴出空氣,而降低擴張片113與保持面622的摩擦。因此,因可一邊抑制與保持面622的摩擦的影響一邊容易地將擴張片進行擴張,故在晶片120間可良好地形成預定的間隔。Furthermore, in this expansion step, the holding surface 622 of the holding stage 62, which is positioned at approximately the same height as the upper surface of the expansion auxiliary roller 613, also contacts the expansion sheet 133. Regarding this, in this embodiment, air is ejected from the holding surface 622 to reduce friction between the expansion sheet 113 and the holding surface 622. Therefore, since the effects of friction with the holding surface 622 can be suppressed while the expansion sheet is easily expanded, a predetermined spacing can be well formed between the wafers 120.

並且,控制部17可藉由控制擴張鼓輪61及保持台62往上方的移動量,而調整擴張片113的擴張量(伸長量)。而且,控制部17可藉由調整擴張片113的擴張量,而將形成於一個個晶片120間之間隔設為預定的間隔。Furthermore, the control unit 17 can adjust the expansion amount (elongation) of the expansion plate 113 by controlling the upward movement of the expansion drum 61 and the holding platform 62. Moreover, the control unit 17 can set the interval between the individual wafers 120 to a predetermined interval by adjusting the expansion amount of the expansion plate 113.

[收縮步驟] 此步驟中,控制部17係在一個個晶片120間已形成預定的間隔之狀態下,控制切換閥639,而使保持台62的保持面622連通吸引源637。藉此,如圖7中使用箭頭302所示,控制部17藉由保持面622而將擴張片113的對應晶片120之區域(晶圓貼附區域131;參閱圖1)吸引保持,並維持晶片120間的間隔(片吸引保持步驟)。 [Shrinking Step] In this step, with a predetermined spacing already formed between the individual chips 120, the control unit 17 controls the switching valve 639 to connect the holding surface 622 of the holding stage 62 to the suction source 637. Thus, as shown by arrow 302 in Figure 7, the control unit 17 uses the holding surface 622 to attract and hold the corresponding area of the expander 113 on the chip 120 (wafer attachment area 131; see Figure 1), maintaining the spacing between the chips 120 (chip attraction and holding step).

此狀態下,控制部17控制移動構件63,如圖8中藉由箭頭402所示,使活塞桿631移動至下方側。藉此,控制部17以保持面622及擴張輔助輥613的上表面成為與筒狀基座51的載置面511大致相同高度之方式,使擴張鼓輪61及保持台62下降至預定的撤離位置(撤離步驟)。In this state, the control unit 17 controls the moving component 63, as shown by arrow 402 in Figure 8, to move the piston rod 631 to the lower side. Thereby, the control unit 17 lowers the expansion drum 61 and the holding platform 62 to a predetermined retraction position (retraction step) so that the upper surfaces of the holding surface 622 and the expansion auxiliary roller 613 are approximately at the same height as the mounting surface 511 of the cylindrical base 51.

藉此,擴張鼓輪61的擴張輔助輥613從擴張片113離開。其結果,擴張片113中之晶圓貼附區域131與環狀框架111之間的區域(亦即,在晶圓100的外周側經拉伸之部分)亦即收縮區域132產生鬆弛。In this way, the expansion auxiliary roller 613 of the expansion drum 61 leaves the expansion plate 113. As a result, the region between the wafer attachment region 131 and the annular frame 111 in the expansion plate 113 (that is, the stretching portion on the outer periphery of the wafer 100), i.e. the shrinkage region 132, becomes relaxed.

接著,如圖9所示,控制部17將加熱構件8(參閱圖3)的紅外線加熱器81定位於擴張片113中之收縮區域132的上方亦即加熱位置,並將紅外線加熱器81設為開啟(ON)。藉此,擴張片113中之收縮區域132被藉由紅外線加熱器81所照射之紅外線加熱,並如圖10所示進行收縮(片收縮步驟)。 如此,在收縮步驟中,藉由加熱而使晶圓100的外周側經拉伸之收縮區域132收縮。 Next, as shown in FIG. 9, the control unit 17 positions the infrared heater 81 of the heating component 8 (see FIG. 3) above the shrinkage region 132 in the expansion piece 113, i.e., at the heating position, and turns the infrared heater 81 ON. Hereby, the shrinkage region 132 in the expansion piece 113 is heated by the infrared rays irradiated by the infrared heater 81, and shrinkage occurs as shown in FIG. 10 (wafer shrinkage step). Thus, in the shrinkage step, the shrinkage region 132, which is stretched on the outer periphery of the wafer 100, shrinks due to heating.

之後,控制部17控制切換閥639,解除保持台62的保持面622與吸引源637的連通。然後,例如操作者從框架保持構件5取出框架單元110,而結束處理。Then, the control unit 17 controls the switching valve 639 to disconnect the holding surface 622 of the holding table 62 from the suction source 637. Then, for example, the operator removes the frame unit 110 from the frame holding member 5, thus ending the process.

如以上,在本實施方式中,在晶片間隔形成步驟中,藉由從設置於擴張片113的下方之保持台62的保持面622噴出空氣,而降低擴張片113與保持面622的摩擦。因此,因能容易地將擴張片133的晶圓貼附區域131進行擴張,故可在晶片120間良好地形成預定的間隔。As described above, in this embodiment, during the wafer spacing formation step, air is ejected from the holding surface 622 of the holding stage 62 located below the expander 113, thereby reducing the friction between the expander 113 and the holding surface 622. Therefore, since the wafer attachment area 131 of the expander 133 can be easily expanded, the predetermined spacing can be well formed between the wafers 120.

並且,在收縮步驟中,藉由使擴張片113中之收縮區域132收縮,而在維持晶片間隔形成步驟中形成於晶片120間之間隔之狀態下,擴張片113回到不鬆弛而緊繃之狀態。因此,例如在將框架單元110搬送至未圖示的拾取裝置之際,可抑制由晶片120彼此接觸所導致之損傷。Furthermore, during the shrinkage step, by shrinking the shrinkage area 132 in the expander 113, the expander 113 returns to a taut state while maintaining the spacing between the wafers 120 formed during the wafer spacing formation step. Therefore, for example, when the frame unit 110 is transported to a pick-up device (not shown), damage caused by contact between the wafers 120 can be suppressed.

並且,在本實施方式中,加熱構件8具有紅外線加熱器81。關於此點,加熱構件8亦可具有對收縮區域132噴吹熱風之構件以代替紅外線加熱器81。Furthermore, in this embodiment, the heating component 8 has an infrared heater 81. In this regard, the heating component 8 may also have a component that blows hot air into the contraction area 132 instead of the infrared heater 81.

並且,本實施方式中,如圖2所示,藉由在晶片間隔形成步驟之前實施改質層形成步驟,而在晶圓100形成有改質層202。然後,在晶片間隔形成步驟中,以改質層202為起點,將晶圓100分割成多個晶片120。關於此點,本實施方式中,亦可實施以下的分割步驟以代替改質層形成步驟。Furthermore, in this embodiment, as shown in Figure 2, a modifier layer 202 is formed on wafer 100 by performing a modifier layer formation step before the wafer spacing formation step. Then, in the wafer spacing formation step, wafer 100 is divided into multiple wafers 120 starting from the modifier layer 202. Regarding this point, in this embodiment, the following dicing step can also be implemented instead of the modifier layer formation step.

[分割步驟] 在此步驟中,如圖11所示,使用切割刀片210,沿著晶圓100的分割預定線103而形成分割槽212。其結果,晶圓100藉由分割槽212而被分割成分別包含一個元件101之多個晶片120。 [Segmentation Step] In this step, as shown in Figure 11, a dicing groove 212 is formed along the predetermined dicing line 103 of the wafer 100 using a dicing blade 210. As a result, the wafer 100 is divided by the dicing groove 212 into multiple wafers 120, each containing an element 101.

此情形,在實施晶片間隔形成步驟前,晶圓100已被分割成多個晶片120。因此,在晶片間隔形成步驟中,晶圓100中之晶片120的間隔會被擴大至預定的間隔。In this case, before the wafer spacing formation step is performed, wafer 100 has been divided into multiple wafers 120. Therefore, in the wafer spacing formation step, the spacing between the wafers 120 in wafer 100 will be expanded to the predetermined spacing.

在此情形中,在晶片間隔形成步驟中,亦藉由從保持台62的保持面622噴出空氣而降低擴張片113與保持面622的摩擦。因此,因能容易地將擴張片113的晶圓貼附區域131進行擴張,故可在晶片120間良好地形成預定的間隔。In this case, during the wafer spacing formation step, air is ejected from the holding surface 622 of the holding stage 62 to reduce the friction between the expander 113 and the holding surface 622. Therefore, since the wafer attachment area 131 of the expander 113 can be easily expanded, the predetermined spacing can be well formed between the wafers 120.

此外,分割步驟中,亦可使用圖2所示之雷射照射器200,藉由雷射光而形成分割槽212。In addition, during the segmentation step, the laser irradiator 200 shown in Figure 2 can also be used to form the segmentation groove 212 by means of laser light.

4:片擴張裝置 17:控制部 5:框架保持構件 40:基台 51:筒狀基座 52:夾具 511:載置面 6:片擴張機構 61:擴張鼓輪 611:周壁 612:底壁 613:擴張輔助輥 614:孔 62:保持台 621:本體 622:保持面 623:本體通氣路徑 63:移動構件 630:活塞基台 631:活塞桿 632:支撐基台 635:連接管 636:空氣通路 637:吸引源 638:空氣源 639:切換閥 8:加熱構件 81:紅外線加熱器 82:支撐桿 83:轉動構件 200:雷射照射器 201:雷射光線 210:切割刀片 100:晶圓 101:元件 103:分割預定線 110:框架單元 111:環狀框架 112:開口 113:擴張片 120:晶片 131:晶圓貼附區域 132:收縮區域 202:改質層 212:分割槽 4: Plate Expansion Device 17: Control Unit 5: Frame Holding Component 40: Base 51: Cylindrical Base 52: Fixture 511: Mounting Surface 6: Plate Expansion Mechanism 61: Expansion Drum 611: Peripheral Wall 612: Bottom Wall 613: Expansion Auxiliary Roller 614: Hole 62: Holding Platform 621: Body 622: Holding Surface 623: Body Vent Path 63: Moving Component 630: Piston Base 631: Piston Rod 632: Support Base 635: Connecting Pipe 636: Air Passage 637: Suction Source 638: Air Source 639: Switching Valve 8: Heating Component 81: Infrared Heater 82: Support Rod 83: Rotating Component 200: Laser Irradiator 201: Laser Beam 210: Cutting Blade 100: Wafer 101: Component 103: Dividing Preset Line 110: Frame Unit 111: Circular Frame 112: Opening 113: Expanding Sheet 120: Chip 131: Wafer Attachment Area 132: Shrinkage Area 202: Modified Layer 212: Dividing Groove

圖1係包含晶圓之框架單元的立體圖。 圖2係表示改質層形成步驟之剖面圖。 圖3係片擴張裝置的分解立體圖。 圖4係片擴張裝置的剖面圖。 圖5係表示晶片間隔形成步驟的框架保持步驟之剖面圖。 圖6係表示晶片間隔形成步驟的片擴張步驟之剖面圖。 圖7係表示收縮步驟的片吸引保持步驟之剖面圖。 圖8係表示收縮步驟的撤離步驟之剖面圖。 圖9係表示收縮步驟的片收縮步驟之剖面圖。 圖10係表示收縮步驟的片收縮步驟之剖面圖。 圖11係表示改質層形成步驟的另一例之剖面圖。 Figure 1 is a perspective view of the frame unit including the wafer. Figure 2 is a cross-sectional view showing the modified layer formation step. Figure 3 is an exploded perspective view of the wafer expansion apparatus. Figure 4 is a cross-sectional view of the wafer expansion apparatus. Figure 5 is a cross-sectional view showing the frame holding step of the wafer spacing formation step. Figure 6 is a cross-sectional view showing the wafer expansion step of the wafer spacing formation step. Figure 7 is a cross-sectional view showing the wafer attraction and holding step of the shrinkage step. Figure 8 is a cross-sectional view showing the removal step of the shrinkage step. Figure 9 is a cross-sectional view showing the wafer shrinkage step of the shrinkage step. Figure 10 is a cross-sectional view showing the sheet shrinkage step of the shrinkage process. Figure 11 is a cross-sectional view showing another example of the modified layer formation step.

5:框架保持構件 51:筒狀基座 52:夾具 511:載置面 61:擴張鼓輪 611:周壁 612:底壁 613:擴張輔助輥 62:保持台 621:本體 622:保持面 623:本體通氣路徑 63:移動構件 630:活塞基台 631:活塞桿 632:支撐基台 635:連接管 636:空氣通路 637:吸引源 638:空氣源 639:切換閥 100:晶圓 110:框架單元 111:環狀框架 113:擴張片 120:晶片 301:箭頭 401:箭頭 5: Frame Holding Component 51: Cylindrical Base 52: Fixture 511: Mounting Surface 61: Expansion Drum 611: Peripheral Wall 612: Bottom Wall 613: Expansion Auxiliary Roller 62: Holding Stage 621: Body 622: Holding Surface 623: Body Ventilation Path 63: Moving Component 630: Piston Base 631: Piston Rod 632: Support Base 635: Connecting Pipe 636: Air Passage 637: Suction Source 638: Air Source 639: Switching Valve 100: Wafer 110: Frame Unit 111: Circular Frame 113: Expansion Sheet 120: Chip 301: Arrowhead 401: Arrowhead

Claims (1)

一種晶片間隔形成方法,其在構成被加工物之多個晶片間形成預定的間隔,該被加工物透過擴張片而支撐於環狀框架的開口,該晶片間隔形成方法的特徵在於具備: 晶片間隔形成步驟,其在藉由在該擴張片將與設置於該擴張片的下方之保持台的保持面接觸之際,從該保持面噴出空氣而降低該擴張片與該保持面的摩擦之狀態下,將該擴張片進行擴張,而在該晶片間形成預定的間隔;以及 收縮步驟,其在實施該晶片間隔形成步驟之後,在藉由該保持台的該保持面而吸引保持該擴張片的對應該晶片之區域且維持該晶片彼此的間隔之狀態下,藉由將該環狀框架的內周緣與被加工物的外周緣之間的該擴張片的部分進行加熱,而使此部分收縮。A method for forming wafer spacing, wherein a predetermined spacing is formed between a plurality of wafers constituting a workpiece supported by an opening in an annular frame via an expansion sheet, the method being characterized by comprising: a wafer spacing forming step, wherein the expansion sheet is expanded by ejecting air from the holding surface to reduce friction between the expansion sheet and the holding surface as the expansion sheet is about to contact the holding surface of a holding stage disposed below the expansion sheet, thereby forming the predetermined spacing between the wafers; and The shrinkage step involves, after the wafer spacing formation step, holding the expansion piece in the area corresponding to the wafer by the holding surface of the holding stage and maintaining the spacing between the wafers, shrinking this portion by heating the portion of the expansion piece between the inner periphery of the annular frame and the outer periphery of the workpiece.
TW111114874A 2021-04-22 2022-04-19 wafer spacing formation method TWI909039B (en)

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Publication number Priority date Publication date Assignee Title
CN105097479A (en) 2014-05-08 2015-11-25 株式会社迪思科 Chip interval maintaining device and chip interval maintaining method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097479A (en) 2014-05-08 2015-11-25 株式会社迪思科 Chip interval maintaining device and chip interval maintaining method

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