TWI781256B - Wafer dividing method and wafer dividing apparatus - Google Patents

Abstract

[Problem] To provide a wafer dividing method and a wafer dividing apparatus capable of dividing a wafer having a starting point for dividing into individual wafers while maintaining the distance between adjacent wafers at the time of dividing. [Solution] The wafer splitting method includes: a loading step of placing the wafer 2 accommodated in the ring frame 4 through the adhesive film 6 on the splitting device 12; In the state of not acting on the wafer 2 placed on the dividing device 12, move away from the means 18 to expand the adhesive film 6, so as to divide the wafer 2 into individual chips and also form a gap between adjacent chips. ; the suction holding step, in the state where the adhesive film 6 expands, the suction force of the wafer holding part 14 works, and the wafer 2 is sucked and held through the adhesive film 6; and the shrinking step is to make the wafer holding part 14 and The frame fixing part 16 is relatively close until the holding surface and the fixing surface become the same plane, and at the same time, the loose adhesive film existing between the wafer 2 and the ring frame 4 is heated to make it shrink.

Description

Wafer dividing method and wafer dividing device

The present invention relates to a wafer dividing method and a wafer dividing device, which divide a wafer having a dividing starting point formed along a planned dividing line into individual wafers while maintaining the interval between adjacent wafers.

A wafer with multiple components such as IC and LSI formed on the front surface divided by a plurality of intersecting planned dividing lines is divided into individual wafers by applying external force after forming the starting point of dividing along the planned dividing lines through a laser processing device. Each chip of the device, each chip after division is used in electronic equipment such as mobile phones and personal computers.

There are the following types (1) to (3) of laser processing devices, and a laser processing device can be selected according to the type of workpiece, processing accuracy, and the like. (1) A type in which ablation processing is performed by irradiating the workpiece with pulsed laser light having an absorbing wavelength to form a groove as a starting point for division (for example, refer to Patent Document 1) (2) The wavelength has a penetrating effect on the workpiece The converging point of the permanent pulsed laser beam is positioned inside the workpiece, and the laser beam is irradiated on the workpiece to form a modified layer as a division starting point inside the workpiece (for example, refer to Patent Document 2) (3) The wavelength is adjusted to The focus point of the penetrating laser light on the workpiece is positioned inside the workpiece, and the pulsed laser light is irradiated on the workpiece to form a plurality of splitting starting points consisting of fine holes and amorphous regions surrounding the fine holes. Types of shield channels (for example, refer to Patent Document 3).

Next, the wafer on which the starting point for splitting is formed along the planned splitting line is each wafer split into individual elements by a splitting device (for example, refer to Patent Document 4). In the dividing device disclosed in Patent Document 4, when the wafer is divided into individual wafers for each element, the wafer with the starting point of dividing formed along the planned dividing line is accommodated in the ring-shaped frame having an opening through an adhesive film. , while placing the wafer on the wafer holding portion of the splitting device, the ring frame is also fixed to the frame fixing portion. Secondly, the wafer holding part and the frame fixing part are relatively far away, so as to expand the adhesive film and make radial tension act on the wafer. This makes it possible to divide a wafer having a dividing start point formed along a planned dividing line into individual wafers for each element, and to form a space between adjacent wafers.

[Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 10-305420 [Patent Document 2] Japanese Patent No. 3408805 [Patent Document 3] Japanese Patent Laid-Open No. 2014-221483 [Patent Document 4] Japanese Patent Laid-Open No. 2005-129607

[Problem to be Solved by the Invention] However, in the state where the wafer is divided into individual wafers, the suction force of the wafer holding part acts to attract and hold the wafer, and then the holding surface and the frame of the wafer holding part are fixed. When the fixed surface of the wafer and the ring frame are approached until they become the same plane, the adhesive film between the wafer and the ring frame will loosen during the approach, and air will leak from between the adhesive film and the holding surface. Since the attractive force is lowered, there is a problem that the wafers approach each other and the distance between the wafers formed at the time of division cannot be maintained.

Therefore, the object of the present invention is to provide a wafer dividing method and a wafer dividing device, which can divide the wafer formed with the dividing starting point into individual wafers, and can also maintain the interval between adjacent wafers at the time of dividing. interval.

[Technical means to solve the problem] According to an aspect of the present invention, there is provided a method for dividing a wafer into individual wafers while maintaining the distance between adjacent wafers. The wafers are accommodated through an adhesive film. A ring-shaped frame having openings for storing wafers and a starting point for splitting are formed along a plurality of intersecting planned splitting lines. The wafer splitting method includes: a placing step of placing the wafers housed in the ring-shaped frame through an adhesive film. The wafer is placed on the splitting device, and the splitting device is provided with: a wafer holding part, which has a holding surface for attracting and holding the wafer through an adhesive film; surface; and away from the means to make the wafer holding part and the frame fixing part relatively far away to expand the adhesive film to divide the wafer into individual chips; in the expanding step, the attraction force in the wafer holding part does not affect the carrier In the working state of the wafer placed in the dividing device, the moving away from the means is used to expand the adhesive film, so that the wafer is divided into individual wafers and at the same time, a gap is formed between adjacent wafers; In the state where the adhesive film is expanded, the suction force of the wafer holding part is activated to attract and hold the wafer through the adhesive film; and the shrinking step is to make the wafer holding part and the frame fixing part relatively close until the holding part The surface and the fixed surface become the same plane, and at the same time, the loose adhesive film existing between the wafer and the ring frame is heated to make it shrink, wherein the shrinking process includes a step of preventing leakage, between the holding surface and the fixed During the process of making the surfaces on the same plane, the loose adhesive film is heated and shrunk so as not to cause air leakage on the holding surface.

Preferably, the leakage preventing step is implemented when the value of the pressure gauge disposed on the wafer holding portion changes. Preferably, the leakage preventing step is implemented at a preset timing. Preferably, the leakage preventing step is carried out in a state where the approach of the holding surface and the fixing surface is stopped.

According to another aspect of the present invention, a wafer dividing device is provided, which can maintain the distance between adjacent wafers while dividing the wafer into individual wafers. An open ring frame and a splitting starting point are formed along a plurality of intersecting predetermined splitting lines. The wafer splitting device includes: a wafer holding part, which has a holding surface for attracting and holding the wafer through an adhesive film; a frame fixing part, On the same plane as the holding surface, there is a fixing surface for fixing the ring-shaped frame; away from the means, the wafer holding part and the frame fixing part are relatively far away to expand the adhesive film to divide the wafer into individual wafers; heating means of heating the loose adhesive film existing between the wafer and the ring frame to cause it to shrink; When the wafer placed on the wafer holding part is active, the distance means is operated to expand the adhesive film, so as to divide the wafer into individual wafers and also form intervals between adjacent wafers; suction and holding control , in the state where the adhesive film expands, the suction force of the wafer holding part acts to attract and hold the wafer through the adhesive film; and the shrinkage control makes the wafer holding part and the frame fixing part relatively close, Until the holding surface and the fixing surface become the same plane, the heating means is also used to heat the loose adhesive film existing between the wafer and the ring frame to shrink it, and wherein, in the shrinkage control, the The control means heats and shrinks the loose adhesive film so that air leakage does not occur on the holding surface while the holding surface and the fixing surface are on the same plane.

Preferably, the wafer holding part is provided with a pressure gauge, and when the value of the pressure gauge provided on the wafer holding part changes, the control means uses the heating means to heat the loose adhesive film to make it shrink , to prevent leakage. Preferably, at a preset timing, the control means uses the heating means to heat the loose adhesive film to make it shrink, so as to prevent leakage. Preferably, the control means uses the heating means to heat the loose adhesive film to make it shrink when the holding surface stops approaching the fixing surface.

[Advantages of the Invention] According to the wafer dividing method of the present invention, since the shrinking step is included in the middle of the holding surface and the fixing surface being on the same plane, the loose adhesive film is heated so as not to cause air leakage on the holding surface to make it Because of the contraction leakage prevention step, the wafer having the splitting origin can be split into individual wafers, and the interval between adjacent wafers can be maintained at the interval at the time of splitting.

According to the wafer splitting device of the present invention, in the shrinkage control, the control means heats the loose adhesive film so that no air leakage occurs on the holding surface while the holding surface and the fixing surface are on the same plane. Since the wafer is shrunk, the wafer on which the origin of division is formed can be divided into individual wafers, and the interval between adjacent wafers can be maintained at the interval at the time of division.

Hereinafter, embodiments of the wafer dividing method and the wafer dividing apparatus according to the present invention will be described with reference to the drawings.

FIG. 1 shows a wafer 2 that can be divided into individual wafers by the wafer dividing method and wafer dividing apparatus of the present invention. The disc-shaped wafer 2 is accommodated in the annular frame 4 having the opening 4 a for accommodating the wafer 2 through the adhesive film 6 . That is, the peripheral edge of the adhesive film 6 is fixed to the annular frame 4 to cover the opening 4 a , and the backside 2 b of the wafer 2 is attached to the adhesive film 6 . The front surface 2 a of the wafer 2 is divided into a plurality of rectangular areas by grid-shaped dividing lines (symbols omitted), and a plurality of elements 8 such as ICs and LSIs are respectively formed in the plurality of rectangular areas. In addition, the wafer 2 is passed through an appropriate laser processing device to form a grid-like dividing starting point 10 along the planned dividing line. Segmentation starting point 10 is a groove formed on the front side 2a of wafer 2 through ablation processing, which can be formed by a modified layer formed inside wafer 2, or a plurality of shield channels, etc. Pores consist of amorphous regions. Alternatively, the dividing starting point 10 may be a cutting groove formed by a cutting device rotatably mounted with a cutting blade. In addition, the adhesive film 6 which may be formed of polyvinyl chloride (PVC) or the like has heat shrinkability that shrinks when heated above a predetermined temperature. The ring frame 4 is formed of an appropriate heat-resistant metal material such as stainless steel.

Referring to FIG. 1 and FIG. 2 , the wafer dividing device constructed according to the present invention will be described. Dividing device 12 is equipped with: wafer holding part 14, has the holding surface that attracts and holds wafer 2 through adhesive film 6; 18, the wafer holding part 14 and the frame fixing part 16 are relatively far away and the adhesive film 6 is expanded to divide the wafer 2 into individual wafers; the heating means 20 is heated between the wafer 2 and the ring frame 4 The loose adhesive film 6 makes it shrink; and the control means 22 (refer to FIG. 2 ).

The wafer holding part 14 includes a circular substrate 24 (refer to FIG. 1 ), a cylindrical support 26 extending upward from the upper surface of the substrate 24 , a porous circular adsorption chuck 28 fixed to the upper end of the support 26 , and It is connected to the suction source 32 (see FIG. 2 ) of the suction chuck 28 through the flow path 30 (see FIG. 2 ). As shown in FIG. 2 , the diameter of the suction chuck 28 is larger than the diameter of the wafer 2 and smaller than the inner diameter of the ring frame 4 . The flow path 30 of the wafer holder 14 is provided with a pressure gauge 34 for measuring the pressure in the flow path 30 and a valve 36 for opening and closing the flow path 30 . Next, in the wafer holding unit 14, by operating the suction source 32 with the valve member 36 open to generate suction force on the upper surface of the suction chuck 28, the wafer placed on the upper surface of the suction chuck 28 can be sucked and held. round 2. That is, in this embodiment, the holding surface for sucking and holding the wafer 2 through the adhesive film 6 is formed through the upper surface of the suction chuck 28 .

The frame fixing portion 16 and the separation means 18 will be described. In this embodiment, as shown in FIG. 1 , the distance means 18 is composed of a plurality of sets of electric cylinders, and extends upward at intervals along the circumferential direction from the upper surface peripheral edge of the base 24 . A frame fixing part 16 is connected to the upper ends of multiple sets of electric cylinders constituting the remote means 18, and the remote means 18 moves the frame fixing part 16 in the vertical direction relative to the wafer holding part 14 and stops it at any position. The frame fixing part 16 includes an annular lifting piece 38 connected to an upper end away from the means 18 , and a plurality of clamps 40 spaced along the circumferential direction and arranged on the outer peripheral edge of the lifting piece 38 . As shown in FIGS. 1 and 2 , the inner diameter of the lifting piece 38 is larger than the outer diameter of the pillar 26 of the wafer holding unit 14 , and there is a gap between the inner peripheral surface of the lifting piece 38 and the outer peripheral surface of the pillar 26 . In addition, the inner diameter and outer diameter of the lift piece 38 are formed corresponding to the inner diameter and outer diameter of the ring frame 4 , and the ring frame 4 can be placed on the upper surface of the lift piece 38 . Next, in the frame fixing portion 16 , the ring frame 4 mounted on the upper surface of the lifting piece 38 can be fixed by the jig 40 . That is, in this embodiment, the fixing surface for fixing the annular frame 4 on the same plane as the holding surface is constituted by the upper surface of the lifting piece 38 . In addition, in the distance means 18, in the state where the ring frame 4 is fixed to the frame fixing part 16, by lowering the frame fixing part 16 relative to the wafer holding part 14 and moving away from it, the adhesive film 6 can be expanded to move the wafer 2 Divided into individual wafers for each element 8 . Furthermore, although the distance means 18 in this embodiment is to make the frame fixing part 16 far away from the wafer holding part 14, as long as the distance means can make the wafer holding part and the frame fixing part relatively far away, it is different from this embodiment. On the contrary, the separating means may be configured to raise and separate the wafer holding part relative to the frame fixing part. In addition, the distance means may also be constituted by an air cylinder.

As shown in FIG. 2 , the heating means 20 includes a disc-shaped integral heater nozzle 42 , a heater 46 connected to the heater nozzle 42 through a flow path 44 , and a valve 48 that opens and closes the flow path 44 . The lower surface of the heater nozzle 42 is formed with an annular ejection port 42a, and the ejection port 42a is disposed above the suction chuck 28 and the lifting piece 38 (that is, when the wafer 2 is placed on the dividing device 12, the wafer 2 2 and the top of the adhesive film 6 between the ring frame 4). Next, in the heating means 20, by operating the heater 46 in the state of opening the valve member 48, high-temperature (for example, 600° C.) air is ejected from the outlet 42 a of the heater nozzle 42 to heat the wafer 2 and the ring frame. The loose adhesive film 6 between 4 makes it shrink.

The control means 22 composed of a computer includes (not shown in the following) a central processing unit (CPU) that performs calculation processing according to a control program, a read-only memory (ROM) that stores control programs, etc., and a read-only memory (ROM) that stores calculation results, etc. Random access memory (RAM) for writing. The control means 22 is electrically connected to the suction source 32 and the valve part 36 of the wafer holding part 14, the heater 46 and the valve part 48 of the remote means 18 and the heating means 20, so as to control the suction source 32 and the valve part of the wafer holding part 14 36. The actuation of the heater 46 and the valve 48 away from the means 18 and the heating means 20 . In addition, the control means 22 is also electrically connected to the pressure gauge 34 of the wafer holding part 14 , and the pressure gauge 34 transmits the measured value of the pressure in the flow path 30 to the control means 22 .

Next, a wafer dicing method according to the present invention will be described. In this specification, the wafer dividing method using the dividing apparatus 12 described above will be described. In the wafer dicing method using the dicing device 12 , first, a placing step is performed to place the wafer 2 housed in the ring frame 4 through the adhesive film 6 on the dicing device 12 . In the loading step, as shown in FIG. 3 , first, the upper surface of the lifting piece 38 is positioned on the same plane as the upper surface of the suction chuck 28 by moving away from the means 18 . Next, with the front surface 2 a of the wafer 2 facing upward, the wafer 2 is placed on the upper surface (holding surface) of the suction chuck 28 of the wafer holding unit 14 , and the annular frame 4 is placed on the frame fixing unit 16 The upper surface (fixed surface) of the lifting piece 38. Furthermore, the ring frame 4 is fixed with a jig 40 .

After the loading step is implemented, the expansion control (expansion step) is implemented by the control means 22, and the suction force in the wafer holding part 14 does not act on the wafer 2 placed on the wafer holding part 14 of the dividing device 12. In this state, move away from the means 18 and expand the adhesive film 6 to divide the wafer 2 into individual wafers and also form intervals between adjacent wafers. In the expansion control (expansion step), first, by not actuating the suction source 32 of the wafer holding unit 14 or closing the valve member 36 of the wafer holding unit 14, the suction force of the suction chuck 28 does not act on the wafer 2. state of action. Next, as shown in FIG. 4 , the lifting piece 38 is lowered by using the means 18 away from it, so that the upper surface of the lifting piece 38 is far away from the upper surface of the adsorption chuck 28 . In this way, since the ring frame 4 also descends with the lifting plate 38 , the adhesive film 6 fixed on the peripheral edge of the ring frame 4 expands to act a radial tension on the wafer 2 . Thereby, the wafer 2 on which the starting point 10 for dividing is formed along the planned dividing line can be divided into individual wafers for each element 8, and a space can be formed between adjacent wafers.

After the expansion control (expansion step), the suction and holding control (suction and holding step) is implemented through the control means 22. In the state where the adhesive film 6 is expanded, the suction force of the wafer holding part 14 acts, and the adhesive film passes through the adhesive film. 6 while attracting and holding wafer 2 . In the suction holding control (suction holding step), in the state where the adhesive film 6 is expanded, the valve 36 of the wafer holding part 14 is opened, and the suction source 32 is also activated to generate suction on the upper surface of the suction chuck 28. force. Thereby, the suction force of the suction chuck 28 can act on the wafer 2 divided into individual wafers for each element 8 , and the wafer 2 can be sucked and held through the adhesive film 6 .

After the suction and holding control (suction and holding step) is carried out, the shrinkage control (shrinking step) is implemented through the control means 22, so that the wafer holding part 14 and the frame fixing part 16 are relatively close until the holding surface and the fixing surface become the same plane, and at the same time The loose adhesive film 6 existing between the wafer 2 and the ring frame 4 is heated by the heating means 20 to shrink it. In the shrinking control (shrinking step) of the present embodiment, the frame fixing part 16 is raised relative to the wafer holding part 14 by the separating means 18 until the upper surface (holding surface) of the suction chuck 28 of the wafer holding part 14 is in contact with the wafer holding part 14. When the upper surface (fixed surface) of the lifting piece 38 of the frame fixing part 16 becomes the same plane, the leakage prevention control is implemented through the control means 22 while the upper surface of the suction chuck 28 and the upper surface of the lifting piece 38 are on the same plane. (Leak prevention step) The loose adhesive film 6 is heated and shrunk by the heating means 20 so as not to cause air leakage on the upper surface of the adsorption chuck 28 .

The leak prevention control (leakage prevention step) can be performed, for example, when the value of the pressure gauge 34 disposed on the wafer holding unit 14 changes. That is, when the wafer 2 is sucked and held on the upper surface of the suction chuck 28 through the adhesive film 6, it can Implement leak prevention steps. The leakage prevention control (leakage prevention step) is preferably carried out in a state where the upper surface (holding surface) of the suction chuck 28 of the wafer holding unit 14 is stopped and the upper surface (fixing surface) of the lifting piece 38 of the frame fixing unit 16 is approached. . Leakage prevention control (leakage prevention step) as shown in Figure 5, by opening the valve 48 of the heating means 20 and also actuating the heater 46, high temperature (for example, 600°C) air is directed from the outlet 42a of the heater nozzle 42 to the existing The loose adhesive film 6 is ejected between the wafer 2 and the ring frame 4 , and as shown in FIG. 6 , the loose adhesive film 6 is heated to make it shrink. Thereby, the suction force of the suction chuck 28 to the wafer 2 divided into individual wafers for each element 8 can be maintained, and the distance between adjacent wafers can be maintained at the time of separation. Next, as shown in FIG. 7, when the upper surface (holding surface) of the suction chuck 28 of the wafer holding part 14 and the upper surface (fixing surface) of the lifting piece 38 of the frame fixing part 16 become the same plane, through the control means 22 to implement the shrinking step of heating the loose adhesive film 6 to make it shrink, then as shown in Figure 8, the relaxation of the adhesive film 6 is eliminated. In addition, the number of times to heat and shrink the loose adhesive film 6 may be more than two times, or may be one time.

In the present embodiment described above, expansion control (expansion step), suction and holding control (suction and holding step), and shrinkage control (shrinking step) are performed, and in the shrinking control (shrinking step), the wafer holding unit The upper surface (holding surface) of the adsorption chuck 28 of 14 and the upper surface (fixed surface) of the lifting piece 38 of the frame fixing part 16 become the same plane, so as not to be on the upper surface (holding surface) of the adsorption chuck 28 In the air leakage method, the loose adhesive film 6 is heated and shrunk to prevent leakage control (leakage prevention step), so that the wafer 2 forming the dividing start point 10 along the planned dividing line can be divided into individual elements 8 At the same time, the interval between adjacent wafers can be maintained at the interval during division.

Furthermore, leakage prevention control (leakage prevention step) can be implemented at a predetermined timing. That is, the leakage prevention control (leakage prevention step) can be performed at the timing when the frame fixing part 16 is raised by a predetermined amount relative to the wafer holding part 14 by the separation means 18 from the state where the expansion control (expansion step) is performed. For the timing of implementing the leakage prevention control (leakage prevention step), for example, when the wafer 2 is sucked and held on the upper surface of the suction chuck 28 through the adhesive film 6, it can be calculated in advance from the value of the pressure gauge 34 at this time through experiments. When the amount of lift of the frame fixing portion 16 changes by a predetermined value or more, the timing of raising the frame fixing portion 16 by the distance means 18 by the amount of lift obtained in advance through experiments is determined.

2‧‧‧wafer 4‧‧‧ring frame 4a‧‧‧opening 6‧‧‧adhesive film 8‧‧‧component 10‧‧‧separation starting point 12‧‧‧separation device 14‧‧‧wafer holder 16‧‧‧frame fixing part 18‧‧‧away means 20‧‧‧heating means 22‧‧‧control means 34‧‧‧pressure gauge

FIG. 1 is a perspective view of a wafer dividing apparatus according to an embodiment of the present invention. Fig. 2 is a cross-sectional view of the dividing device shown in Fig. 1 . Fig. 3 is a cross-sectional view of a dividing device showing a state in which a placing step is performed. Fig. 4 is a cross-sectional view of the dividing device showing a state in which the expansion step is performed. Fig. 5 is a cross-sectional view of a dividing device showing a state in which a leak prevention step is performed in a shrinking step. Fig. 6 is a cross-sectional view of the dividing device showing a state in which a leak prevention step is performed and the slack of the adhesive film is eliminated. Fig. 7 is a cross-sectional view of the dividing device showing a state in which the slack of the adhesive film occurs again and the leakage prevention step is performed again. 8 is a cross-sectional view of the dividing device showing a state in which the holding surface of the wafer holding unit and the fixing surface of the frame fixing unit are flush with each other.

2‧‧‧Wafer

4‧‧‧Ring frame

6‧‧‧Adhesive film

8‧‧‧Components

12‧‧‧Splitting device

14‧‧‧Wafer Holder

16‧‧‧Frame fixing part

18‧‧‧Stay away from means

20‧‧‧Heating means

22‧‧‧Control means

26‧‧‧Pillar

28‧‧‧Suction Chuck

30‧‧‧flow path

32‧‧‧Attraction source

34‧‧‧Pressure gauge

36‧‧‧Valves

38‧‧‧Elevator

40‧‧‧Jigs

42‧‧‧Heater nozzle

42a‧‧‧Ejection port

44‧‧‧flow path

46‧‧‧Heater

48‧‧‧Valves

Claims (6)

A method of dividing a wafer, which divides the wafer into individual wafers while maintaining the distance between adjacent wafers. The wafer is stored in a ring frame with an opening for receiving the wafer through an adhesive film and along the intersection A plurality of planned dividing lines are formed with dividing starting points. The wafer dividing method includes: a placing step, placing the wafer stored in the annular frame through the adhesive film on the dividing device, and the dividing device includes: a wafer holding The part has a holding surface for attracting and holding the wafer through the adhesive film; the frame fixing part has a fixing surface for fixing the ring-shaped frame on the same plane as the holding surface; and means away from the wafer holding part and the frame The fixing part is relatively far away to expand the adhesive film to divide the wafer into individual wafers; the expansion step is performed under the condition that the suction force of the wafer holding part does not act on the wafer placed on the dividing device The adhesive film is expanded away from the means to divide the wafer into individual wafers and at the same time to form intervals between adjacent wafers; the suction and holding step is to make the suction of the wafer holding part in the expanded state of the adhesive film. The force acts to attract and hold the wafer through the adhesive film; and the shrinking step makes the wafer holding part and the frame fixing part relatively close until the holding surface and the fixing surface become the same plane, and at the same time, heat exists on the wafer The loose adhesive film between the circle and the ring-shaped frame shrinks it, wherein the shrinking step includes the step of preventing leakage, so as not to cause leakage on the holding surface when the holding surface and the fixing surface become the same plane. The loose adhesive film is heated and shrunk by means of air leakage, and the value of the pressure gauge arranged on the wafer holding part changes as planned since the wafer is sucked and held on the wafer holding part through the adhesive film When the value is above, implement the leakage prevention step. A method of dividing a wafer, which divides the wafer into individual wafers while maintaining the distance between adjacent wafers. The wafer is stored in a ring frame with an opening for receiving the wafer through an adhesive film and along the intersection A plurality of planned dividing lines are formed with dividing starting points. The wafer dividing method includes: a placing step, placing the wafer stored in the annular frame through the adhesive film on the dividing device, and the dividing device includes: a wafer holding The part has a holding surface that attracts and holds the wafer through the adhesive film; the frame fixing part has a fixing surface that fixes the ring frame on the same plane as the holding surface; and is away from The method is to make the wafer holding part and the frame fixing part relatively far away and expand the adhesive film to divide the wafer into individual wafers; in the expansion step, the suction force of the wafer holding part does not exert any influence on the division When the wafer of the device is active, move the away means to expand the adhesive film, so as to divide the wafer into individual wafers and also form intervals between adjacent wafers; in the attraction and holding step, when the adhesive film expands state, make the suction force of the wafer holding part work, and hold the wafer through the adhesive film; and shrink the step, make the wafer holding part and the frame fixing part relatively close until the holding surface and the fixing The surface becomes the same plane, and at the same time, the loose adhesive film existing between the wafer and the ring frame is heated to shrink it, wherein the shrinking step includes a leak prevention step, and the holding surface and the fixing surface become the same plane During the process, the loose adhesive film is heated and shrunk so as not to cause air leakage on the holding surface, and the value of the pressure gauge arranged on the wafer holding part is obtained in advance from the wafer passing through the adhesive film. The circle attracts and maintains the actuation amount of the separation means when it is calculated from the wafer holding part and changes by a predetermined value or more, and executes the leak prevention step when the separation means has actuated the previously determined actuation amount. The method for dividing a wafer according to claim 1 or 2 of the patent claims, wherein the step of preventing leakage is performed in a state where the holding surface is stopped from approaching the fixing surface. A wafer splitting device, which divides a wafer into individual chips while maintaining the distance between adjacent chips, the wafer is stored in a ring frame with an opening for receiving the wafer through an adhesive film and along the cross A plurality of planned dividing lines form a starting point for dividing, and the wafer dividing device includes: a wafer holding part, which has a holding surface for attracting and holding the wafer through an adhesive film; a frame fixing part, which has a fixing surface on the same plane as the holding surface The fixing surface of the ring frame; away from the means, the wafer holding part and the frame fixing part are relatively far away to expand the adhesive film, so as to divide the wafer into individual chips; the heating means heats the wafer and the frame fixing part. a loose adhesive film between the ring frames to shrink them; and a control means, wherein the control means implements: Expansion control, in the state where the suction force of the wafer holding part does not act on the wafer placed on the wafer holding part, actuate the separating means to expand the adhesive film to divide the wafer into individual wafers At the same time, a gap is formed between adjacent wafers; suction holding control, in the state where the adhesive film is expanded, the suction force of the wafer holding part works, and the wafer is attracted and held through the adhesive film; and shrinkage control , making the wafer holding part and the frame fixing part relatively close until the holding surface and the fixing surface are on the same plane, and at the same time, the heating means is used to heat the loose adhesive film existing between the wafer and the ring frame And make it shrink, and wherein, in the shrink control, the value of the pressure gauge arranged in the wafer holding part by the control means is calculated from the value of the wafer being sucked and held in the wafer holding part through the adhesive film. When the change is greater than a predetermined value, the loose adhesive film is heated and shrunk while the holding surface and the fixing surface are on the same plane so as not to cause air leakage on the holding surface. A wafer splitting device, which divides a wafer into individual chips while maintaining the distance between adjacent chips, the wafer is stored in a ring frame with an opening for receiving the wafer through an adhesive film and along the cross A plurality of planned dividing lines form a starting point for dividing, and the wafer dividing device includes: a wafer holding part, which has a holding surface for attracting and holding the wafer through an adhesive film; a frame fixing part, which has a fixing surface on the same plane as the holding surface The fixing surface of the ring frame; away from the means, the wafer holding part and the frame fixing part are relatively far away to expand the adhesive film, so as to divide the wafer into individual chips; the heating means heats the wafer and the frame fixing part. The loose adhesive film between the ring frames makes it shrink; and the control means, wherein the control means implements: expansion control, the suction force in the wafer holding part does not exert force on the wafer holding part When the wafer is in a working state, move the away means to expand the adhesive film to divide the wafer into individual chips and also form a gap between adjacent chips; the attraction is kept under control, and the adhesive film is expanded. , make the attractive force of the wafer holding part work, and attract and hold the wafer through the adhesive film; and Shrinkage control, make the wafer holding part and the frame fixing part relatively close until the holding surface and the fixing surface become the same plane, and at the same time use the heating means to heat the loose adhesion between the wafer and the ring frame In the contraction control, the control means heats the loose adhesive in such a way that air leakage does not occur on the holding surface on the way that the holding surface and the fixing surface become the same plane The control means is pre-set when the value of the pressure gauge arranged on the wafer holding part changes by more than a predetermined value from the time when the wafer is sucked and held on the wafer holding part through the adhesive film. When the moving amount of the distance means has been moved by the predetermined amount, the control means uses the heating means to heat the loose adhesive film to shrink it, so as to prevent leakage. The wafer dividing device as described in claim 4 or 5, wherein, in the state where the holding surface is stopped from approaching the fixing surface, the control means uses the heating means to heat the loose adhesive film to make it shrink .

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