TWI906766B - Semiconductor manufacturing apparatus, inspection apparatus, and manufacturing method of semiconductor device - Google Patents

Abstract

The problem of this invention is to provide a technique for detecting the state of bonded dies. The solution involves a semiconductor manufacturing apparatus comprising: a platform holding a substrate with dies bonded together by bonding heads; a recognition camera positioned above the substrate; an illumination device positioned above the substrate; and a control device configured to illuminate the dies with illumination light by the illumination device, and to image the dies with the recognition camera, thereby detecting the bond state of the dies based on the presence or absence, position, shape, or brightness distribution of the image of the illumination light.

Description

Semiconductor manufacturing apparatus, inspection apparatus, and manufacturing method of semiconductor device

This case relates to semiconductor manufacturing apparatus, such as a die bonding machine applicable to inspecting the bonding state of the die.

As one of the manufacturing processes for semiconductor devices, there is a die bonding process. This process uses a collet (adsorption nozzle) located on a bonding head to pick up the die, which is then bonded to a substrate or is already mounted on the substrate. [Prior Art Documents] [Patent Documents]

[Patent Document 1] Japanese Patent Application Publication No. 2022-150045

(The problem the invention aims to solve)

There are cases where grains are not properly bonded. For example, there are cases where a portion of a grain is displaced in the vertical direction and thus bonded together.

This invention aims to provide a technique for detecting the bonding state of bonded grains. Other issues and novel features are clearly illustrated in the description and accompanying figures of this manual. (Means for solving the problems)

The representative of this case is briefly summarized as follows: That is, the semiconductor manufacturing apparatus includes: a platform holding a substrate with a die bonded together by an adhesive head; an identification camera disposed above the substrate; an illumination device disposed above the substrate; and a control device configured to illuminate the die with illumination light by the illumination device, and to photograph the die with the identification camera, thereby inspecting the bonding state of the die based on the presence or absence of a mirror image of the illumination light, the position of the mirror image, the shape of the mirror image, or the brightness distribution of the mirror image. [Effects of the Invention]

According to this case, the bonding state of the bonded grains can be detected.

The following uses drawings to illustrate the relevant embodiments and variations. However, in the following description, the same symbol is sometimes used for the same constituent element, and repeated descriptions are omitted. In addition, in order to make the explanation clearer, there are cases where the width, thickness, shape, etc. of each part are shown in a pattern compared with the actual form, but this is ultimately an example and is not intended to limit the scope of this case.

Figures 1 to 3 will be used to explain the configuration of a die-bonding machine as a semiconductor manufacturing apparatus. Figure 1 is a top view showing a schematic configuration of the die-bonding machine in an embodiment. Figure 2 is a diagram showing the schematic configuration as viewed from the direction of arrow A in Figure 1. Figure 3 is a schematic side view showing the preform section shown in Figure 1.

The die bonding machine 1 generally comprises a wafer feeding unit 10, a pick-up unit 20, an intermediate platform unit 30, a preforming unit 90, a bonding unit 40, a conveying unit 50, a substrate feeding unit 60, a substrate unloading unit 70, and a control unit (control device, controller) 80. The Y2-Y1 direction is the front-to-back direction of the die bonding machine 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-and-down direction. The wafer feeding unit 10 is located on the front side of the die bonding machine 1, and the bonding unit 40 is located on the rear side.

The wafer supply unit 10 includes a wafer cassette lift 11, a wafer holding stage 12, a stripping unit 13, and a wafer identification camera 14.

The wafer cassette lift 11 moves the wafer cassette (not shown) containing a plurality of wafer rings WR vertically to the wafer transport height. Alignment of the wafer rings WR supplied from the wafer cassette lift 11 is performed using a wafer alignment slide (not shown). A wafer pick (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holding stage 12, or removes them from the wafer holding stage 12 and stores them in the wafer cassette.

The wafer W is adhered to dicing tape DT, which is divided into a plurality of dies D. The dicing tape DT is held on the wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the dies D are semiconductor chips or glass chips, or MEMS (Micro Electro Mechanical Systems).

The wafer holding stage 12 moves along the X1-X2 and Y1-Y2 directions using an XY stage (not shown) and a drive unit, moving the picked-up die D to the position of the peeling unit 13. The wafer holding stage 12 rotates the wafer ring WR within the XY plane using a drive unit (not shown). The peeling unit 13 moves along the Z1-Z2 direction using a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

The wafer identification camera 14 is used to determine the pickup position of the die D picked up from the wafer W or to inspect the surface of the die D.

The pickup unit 20 includes a pickup head 21 and a Y-drive unit 23. The pickup head 21 has a chuck 22 that holds the peeled die D at its front end. The pickup head 21 picks up the die D from the wafer feed unit 10 and places it on the intermediate platform 31. The Y-drive unit 23 moves the pickup head 21 in the Y1-Y2 direction. The pickup unit 20 includes various drives (not shown) that raise, rotate, and move the pickup head 21 in the X1-X2 direction.

The intermediate platform section 30 includes an intermediate platform 31 for mounting the die D and a platform recognition camera 34 for identifying the die D on the intermediate platform 31. The intermediate platform 31 has suction holes for adsorbing the mounted die D. The mounted die D is temporarily held on the intermediate platform 31.

The preforming section 90 includes a syringe 91, a drive unit 93, a preforming camera 94 serving as an imaging device, and a preforming platform 96. The syringe 91 has a nozzle 92 at its lower front end. The syringe 91 applies paste to the substrate S, which is transported to the preforming platform 96 by the transport unit 50. The drive unit 93 moves the syringe 91 in the X1-X2, Y1-Y2, and Z1-Z2 directions. The substrate S is, for example, a wiring board, a lead frame formed from a thin metal sheet, or a glass substrate.

The preforming camera 94 controls the position of the paste applied to the substrate S by the syringe 91. The preforming platform 96 rises when the paste is applied to the substrate S and supports the substrate S from below. The preforming platform 96 has suction holes (not shown) for vacuum suction of the substrate S, which can fix the substrate S.

The bonding section 40 includes a bonding head 41, a Y-drive unit 43, a substrate recognition camera 44, and a bonding platform 46. The bonding head 41 is equipped with a chuck 42 that holds the die D at its front end. The Y-drive unit 43 moves the bonding head 41 in the Y1-Y2 direction. The substrate recognition camera 44 captures images of the position identification marks (not shown) of the packaging area P on the substrate S to identify the bonding position. Here, a plurality of product areas (hereinafter referred to as packaging areas P) are formed on the substrate S to ultimately form a package. The position identification marks are provided for each packaging area P. The bonding platform 46 rises when the die D is placed on the substrate S, supporting the substrate S from below. The bonding platform 46 has a suction port (not shown) for vacuum adsorption of the substrate S, which can fix the substrate S. The bonding platform 46 also has a heating part (not shown) for heating the substrate S. The bonding part 40 has driving parts (not shown) for raising, rotating and moving the bonding head 41 in the X1-X2 direction.

With this configuration, the bonding head 41 corrects its pickup position and posture based on the image data from the platform recognition camera 34, and picks up the die D from the central platform 31. Then, the bonding head 41, based on the image data from the substrate recognition camera 44, bonds (places and adheres) the die D onto the paste-coated encapsulation area P of the transported substrate S.

The conveying unit 50 has a conveying claw 51 for gripping and conveying the substrate S and a pair of conveying channels 52 for moving the substrate S. The substrate S moves in the X1-X2 direction by driving the nuts of the conveying claw 51 (not shown) with a ball screw (not shown) along the conveying channel 52, and the driving conveying claw 51 is provided on the conveying channel 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the conveying channel 52 to the bonding position, and after bonding, moves to the substrate removal unit 70, where the substrate S is handed over.

The substrate supply unit 60 takes out the substrate S that has been moved into the transport fixture from the transport fixture and supplies it to the transport unit 50. The substrate removal unit 70 houses the substrate S that has been transported by the transport unit 50 in the transport fixture.

The control system of the die bonding machine 1 will be explained using Figure 4. Figure 4 is a block diagram showing the general structure of the control system of the die bonding machine shown in Figure 1.

The control system 8 comprises a control unit 80, a driver unit 86, a signal unit 87, and an optical system 88. The control unit 80 mainly consists of a control and computing device 81 (consisting of a CPU, Central Processing Unit), a memory device 82, input/output devices 83, busbars 84, and a power supply unit 85. The memory device 82 includes a main memory device 82a and an auxiliary memory device 82b. The main memory device 82a is composed of RAM (Random Access Memory) for storing processing programs, etc. The auxiliary memory device 82b is composed of HDD (Hard Disk Drive) or SSD (Solid State Drive) for storing control data or image data necessary for control.

The input/output device 83 includes: a monitor 83a displaying the device status or information of the die bonder 1; a touch panel 83b for inputting operator instructions; a mouse 83c for operating the monitor 83a; and an image acquisition device 83d for acquiring image data from the optical system 88. The input/output device 83 further includes a motor control device 83e and an I/O signal control device 83f. The motor control device 83e is a drive unit 86 that controls the ZY drive shafts of the XY stage of the wafer feed unit 10 or the bonding head stage of the bonding unit 40. The I/O signal control device 83f receives signals from the signal unit 87 or controls the signal unit 87. The signal unit 87 includes switches or adjusters for controlling the brightness of various sensors, lighting devices, etc. The control and calculation unit 81 receives necessary data via bus cable 84 and performs calculations to control the pickup head 21, etc., or transmit information to the monitor 83a, etc.

The control and calculation device 81 stores the image data captured by the optical system 88 in the memory device 82 via the image acquisition device 83d. The optical system 88 includes a wafer recognition camera 14, a platform recognition camera 34, a substrate recognition camera 44, and a preform camera 94. The cameras used in the optical system 88 digitize light intensity or color. Using software programmed based on the stored image data, the control and calculation device 81 performs positioning of the die D and substrate S, inspection of the paste application pattern, and surface inspection of the die D and substrate S. The control and calculation device 81 actuates the drive unit 86 via the motor control device 83e based on the calculated positions of the die D and substrate S using software. In this process, the control and computing device 81 positions the die D on the wafer W and operates the drive units of the wafer supply unit 10, the pickup unit 20 and the bonding unit 40 to bond the die D to the packaging area P of the substrate S.

Figure 5 illustrates the bonding process (manufacturing method of semiconductor device) as one of the manufacturing processes of a semiconductor device using the die bonder 1. Figure 5 is a flowchart showing the manufacturing method of a semiconductor device using the die bonder shown in Figure 1. In the following description, the operation of each component constituting the die bonder 1 is controlled by the control unit 80.

(Wafer Loading: Process S1) The wafer ring (WR) is supplied to the wafer cassette of the wafer cassette elevator 11. The supplied wafer ring (WR) is then supplied to the wafer holding stage 12.

(Substrate Loading: Process S2) A transport fixture containing substrate S is supplied to the substrate supply unit 60. The substrate S is removed from the transport fixture in the substrate supply unit 60 and secured to the transport claw 51.

(Pick-up: Process S3) After process S1, the wafer holding stage 12 is activated to pick up the desired die D from the dicing tape DT. The die D is imaged by the wafer recognition camera 14, and its positioning and surface inspection are performed based on the image data obtained. The image data is processed to calculate the offset (X, Y, θ directions) of the die D from the die position reference point on the wafer holding stage 12, and then it is positioned accordingly. Furthermore, the die position reference point is initially set based on a predetermined position on the wafer holding stage 12. The surface inspection of the die D is performed through image data processing.

The positioned die D is peeled off from the cutting tape DT by the peeling unit 13 and the pick-up head 21. The die D peeled off from the cutting tape DT is adsorbed and held in the chuck 22 provided in the pick-up head 21 and then transported to the intermediate platform 31 for placement.

A platform recognition camera 34 photographs the die D on the intermediate platform 31, and the die D is positioned and its surface inspected based on the image data obtained from the photograph. The image data is processed to calculate the deviation (X, Y, θ directions) of the die D from the die position reference point of the die bonding machine 1, and then the die is positioned accordingly. Furthermore, the die position reference point is initially set to a predetermined position on the intermediate platform 31. The surface of the die D is then inspected based on the image data.

After the die D is transported to the intermediate platform 31, the pick-up head 21 returns to the wafer feed section 10. Following the above procedure, the next die D will be peeled off from the dicing tape DT, and then the same procedure will be followed to peel the dies D off from the dicing tape DT one by one.

(Preforming: Process S4) After process S2, the substrate S is transported to the preforming platform 96 by the transfer unit 50. The surface of the substrate S before coating is photographed by the preforming camera 94, and the areas to be coated are confirmed based on the image data obtained from the photograph. If there are no problems on the areas to be coated, the position of the coating material on the substrate S supported by the preforming platform 96 is confirmed and positioned. Positioning is performed using methods such as pattern matching.

The paste is ejected from the nozzle 92 at the tip of the syringe 91 and applied to the substrate S along the trajectory of the nozzle 92. When the paste contained in the syringe 91 is applied to the substrate S, pressurized gas such as air is supplied from the top of the syringe 91 for a certain period of time from an air pulse dispenser, and a predetermined amount of paste is dispensed. With the nozzle 92 close to the substrate S, the syringe 91 performs a two-dimensional single-stroke scanning (drawing action) in the XY plane.

The applied paste is photographed using a pre-forming camera 94. The image obtained from the photograph is used to confirm whether the paste has been applied correctly, and an inspection (appearance inspection) is performed on the applied paste. That is, in the appearance inspection, it is confirmed whether the applied paste is applied in a predetermined amount and shape to a predetermined location on the substrate S. The inspection includes, for example, the presence or absence of paste, the applied area, and the applied shape (excess/insufficiency, protrusion), etc. In addition to methods such as calculating the prime number after separating the paste regions using binarization processing, the inspection can also be performed using methods such as difference comparison and pattern matching score comparison.

(Adhesion: Process S5) If there are no problems with the coating, the substrate S is transported to the bonding platform 46 by the transfer unit 50. The substrate S, placed on the bonding platform 46, is photographed by the substrate recognition camera 44, and image data is obtained through photography. The image data is processed to calculate the deviation (X, Y, θ directions) of the substrate S from the substrate position reference point of the bonding machine. Furthermore, the substrate position reference point is initially set by the bonding unit 40 based on a predetermined position.

The adsorption position of the bonding head 41 is corrected by the deviation of the die D on the intermediate platform 31 calculated in process S3, and the die D is adsorbed by the chuck 42. The bonding head 41, after adsorbing the die D from the intermediate platform 31, adheres the die D to a predetermined position on the substrate S supported by the bonding platform 46. The substrate recognition camera 44 takes a picture of the die D adhered to the substrate S, and checks whether the die D is adhered to the desired position based on the image data obtained by the camera.

After the die D is bonded to the substrate S, the bonding head 41 returns to the intermediate platform 31. Following the above procedure, the next die D is picked up from the intermediate platform 31 and bonded to the substrate S. This process is repeated to bond the die D to all the packaging areas P of the substrate S.

(Substrate Transfer: Process S6) The substrate S with the adhered die D is conveyed to the substrate transfer section 70. In the substrate transfer section 70, the substrate S is removed from the transfer claw 51 and placed in the transfer fixture. The transfer fixture containing the substrate S is then removed from the die bonder 1.

As described above, die D is mounted on substrate S and removed from die bonding machine 1. Then, for example, a transport fixture housing substrate S with die D mounted is transported to a wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wires or the like. Then, substrate S is transported to a molding process, where die D and Au wires are sealed with molding resin (not shown), thereby completing semiconductor packaging.

The lamination bonding process follows the wire bonding process. A transport fixture holding a substrate S with mounted dies D is fed into a die bonder, where dies D are laminated onto the dies D mounted on the substrate S. After being removed from the die bonder, a wire bonding process is used to electrically connect the dies D to the electrodes of the substrate S via Au wires. Dies D positioned above the second stage are peeled from the cutting tape DT using the aforementioned method and then transported to the bonding section for lamination onto the dies D. After the above process is repeated a predetermined number of times, the substrate S is transported to a molding process where molding resin (not shown) is used to seal multiple dies D and Au wires, thereby completing the lamination encapsulation.

This document outlines a method for checking the tilt of a die D, specifically whether the die D bonded to the substrate S or the die D bonded to a semiconductor wafer mounted on the substrate S is parallel to the top surface of the substrate S.

Most grains have a specular reflection characteristic on their surface. For example, the surface of the grain D of semiconductor wafers, glass, and MEMS has a specular reflection characteristic. In this embodiment, an illumination device (light source) illuminates the grain while a recognition camera photographs the grain, and the tilt of the grain is detected based on the mirror image of the illuminating light.

Figure 6 will be used to illustrate the tilt inspection performed on the optical system of the adhesive portion 40. Figure 6 is a diagram showing the optical system, grains, and image of the adhesive portion shown in Figure 1.

As shown in Figure 6, the substrate recognition camera 44 includes a camera body unit 44a and a lens unit 44b. The substrate recognition camera 44 is positioned above the substrate S with its optical axis perpendicular to the substrate S. An illumination device 45 is disposed above the substrate S (e.g., near the substrate recognition camera 44). The illumination device 45 is a ring illumination device and is disposed around the lens unit 44b. The substrate recognition camera 44 is positioned near and directly above the die D. That is, the die D is positioned near the center of the imaging range IR (field of view) of the substrate recognition camera 44. The control unit 80 illuminates the chip D with a ring of light from the illumination device 45 and takes a picture of the chip D with the substrate recognition camera 44.

As shown in the NTL in Figure 6, when the die D is horizontally (perpendicular to the optical axis) bonded to the substrate S, the substrate recognition camera cannot recognize the illumination (mirror image MI) shining on the die D. That is, there are no locally bright areas in the image of the die D.

As shown in the TLT of Figure 6, if grain D is tilted from horizontal, the mirror image MI of the illumination light will be projected onto the surface of grain D. The image of grain D contains locally bright areas of the mirror image MI. Here, grain D is an example where angle C1 is greater than angle C3. The X1 side and Y2 side of the image of grain D corresponds to angle C1, and the X2 side and Y1 side corresponds to angle C3.

The control unit 80 performs image processing on the image of the chip D and determines the tilt of the chip D based on the presence or absence of the mirror image MI. The radius of the ring of the illumination device 45 is set to be the radius where the tilt angle of the chip D becomes problematic. In other words, the critical value for tilt determination can be set by the radius of the ring illumination device. The control unit 80 can also detect the tilt direction of the chip D from the direction of the arc of the mirror image MI.

As shown in ML in Figure 6, the illumination device 45 can also be configured by multiple concentric ring illumination devices. The control unit 80 illuminates the ring illumination devices sequentially from the inside, capturing an image at each illumination. By confirming the mirror image MI projected in the multiple images, in addition to the presence or direction of the tilt of the grain D, the tilt amount (tilt angle) of the grain D can also be determined. That is, by determining the position of the mirror image MI on the surface of the grain D through image processing, the tilt amount can be determined. The critical value of the tilt amount can also be adjusted by selecting the illuminated ring illumination.

The control unit 80 can also adjust the coating amount by tilt amount or direction (the tilt tendency of the grains). For example, the control unit 80 adjusts the coating amount by changing the movement speed of a portion of the penlite coating's individual trajectory or by changing the coating pressure and speed of the dispenser. This reduces the tilt of the grains D. The coating amount adjustment can also be performed automatically during production.

The control unit 80 detects tilt and, if the tilt amount is determined to be above the critical value, may report an error or record the defect of that grain. When the control unit 80 determines that the tilt amount is above the critical value, it may also use the bonding head 41 to apply additional pressure to the grain D to reduce the tilt amount. In this case, a re-inspection of the tilt can also be performed.

In the event of a registration failure, the control unit 80 may either not adhere to subsequent layers of the laminated product, or it may adhere to dummy dies. By adhering to dummy dies, one-time molding stability can be achieved in the molding process.

According to this embodiment, one or more of the following effects can be achieved.

(a) Tilting can be checked during the crystal bonding process, and quality management regarding defects caused by the presence or absence of tilt is possible. This can improve the quality of defects caused by the presence or absence of grain tilt.

For example, consider a semiconductor image sensor chip mounted on a substrate S, an image paste applied to the image sensor chip, and a glass chip (cover glass) die D mounted on it. The die D is slightly raised above the surface of the substrate S (the surface of the semiconductor chip). In this case, it is required that the die D not be tilted above the surface of the substrate S. That is, it is necessary to confirm whether the die D is tilted, which can be done using this embodiment.

(b) With displacement gauges such as lasers, only one point can be checked at a time, so multiple points must be measured to determine the tilt. This incurs processing time. In this embodiment, the tilt of the entire grain can be determined in a single image acquisition. Therefore, compared to tilt detection based on displacement gauges, the detection speed is much faster, and production efficiency can be maintained and improved.

(c) Compared to measuring grain tilt using a displacement meter, this method simplifies system setup and improves maintainability.

<Variations> The following examples illustrate representative variations of the embodiments. In the descriptions of these variations, the same symbols as in the descriptions of the embodiments described above may be used for parts having the same structure and function. Furthermore, the descriptions of these parts may appropriately reference the descriptions of the embodiments described above, to the extent that they are not technically contradictory. Moreover, a portion of the above embodiments and all or part of the variations may be appropriately combined to the extent that they are not technically contradictory.

(First Variation) Figure 7 will be used to illustrate the tilt inspection of the first variation. Figure 7 is a diagram showing the optical system, grain size, and image of the first variation.

The lighting device 45 in the first variation is a circular lighting device disposed near the lens unit 44b. The circular lighting device is a clearly defined circular light source or a point light source. This light source does not require parallel light and can also be diffused light.

As shown in the NTL of Figure 7, the die D is positioned at the center of the imaging range (field of view) IR of the off-substrate identification camera 44, so that when the die D is held horizontally, the image of the illumination light will shine on the center of the die D.

As shown in the NTL in Figure 7, when the chip D is horizontally bonded to the substrate S, the mirror image MI of the illumination light will be projected into a circular shape at the center of the chip D.

As shown in the TLT of Figure 7, if grain D is tilted from horizontal, the mirror image MI of the illumination light will not be circularly projected in the center of grain D. Here, grain D is an example where angle C1 is tilted more than angle C3. The X1 side and Y2 side of the image of grain D corresponds to angle C1, and the X2 side and Y1 side corresponds to angle C3. The mirror image MI is projected slightly near angle C1 of grain D. If the tilt of grain D is greater, the mirror image MI will not be projected.

The control unit 80 processes an image of the die D and determines the tilt of the die D based on the presence and position of the mirror image MI. If the mirror image MI is projected onto the surface of the die D at the correct position, it is determined that there is no tilt of the die D and it is correctly bonded. If the mirror image MI is misaligned or not projected, it is determined that there is tilt of the die D. By using this method to check the tilt of the die D, it is determined whether the die D is a good or defective product. The control unit 80 can also detect the tilt direction of the die D from the position of the mirror image MI.

As shown in ML in Figure 7, the lighting device 45 can also be constructed by setting multiple concentric ring lights around the circular lighting device. The control unit 80 sequentially illuminates the lights while capturing an image at each illumination. By checking the mirror image MI projected in the multiple images, not only the presence or absence of the tilt of the grain D can be determined, but also the amount of tilt of the grain D can be measured. That is, by determining the position of the mirror image MI on the surface of the grain D through image processing, the amount or direction of tilt can be measured. The diameter of the circular light-emitting area can also be adjusted by combining the illuminated lights, thereby adjusting the detection threshold value of the tilt amount.

Through the above-described structure and operation, the first variant can achieve the same effect as the implemented form.

(Second Variation) Figure 8 will be used to illustrate the inspection for detecting grain warping. Figure 8 is a diagram showing the optical system, grains, and their images in the second variation. Figure 9 is a diagram showing the method of moving the mirror image position.

In the optical system of the implemented form and the first variation, an example of checking for grain tilt is illustrated. On the other hand, in the optical system of the second variation, the grain warping is checked.

The stacking of grains is achieved by staggering the bonding pads of the grains so that they are not covered by the bonding pads of the upper grains. In other words, the lower grains are not in contact with each other on the opposite side of the bonding pads of the upper grains. That is, the stacked grains form hollow regions at the bottom. There is a tendency for warping on the side with these hollow regions.

As shown in Figure 8, for the center of lens unit 44b, an illumination device 45 consisting of a strip illumination device is provided on the opposite side (X1 side) to the position of the warp of the expected grain D (X2 side).

As shown in the NCR of Figure 8, when there is no warping or minimal warping of the grain D, the mirror image MI of the illumination light from this illumination device 45 will not shine into the grain D. That is, there are no locally bright areas in the image of the grain D.

As shown in the CRV in Figure 8, if warping occurs in grain D, the mirror image MI of the illumination light will shine into the warped portion.

The control unit 80 performs image processing on the image of the chip D and determines the presence and degree of warping of the chip D by the presence or absence of the mirror image MI.

As shown in ML in Figure 8, the lighting device 45 can also be configured with multiple rows of strip lighting devices. This allows the position of the mirror MI to be moved. The control unit 80 can also sequentially illuminate a plurality of strip lighting devices and calculate the warping amount from the position of the mirror MI by each image capture and image processing.

Alternatively, instead of the lighting device 45 being composed of a plurality of strip lighting devices, as shown in LM of Figure 9, the lighting device 45 composed of a single strip lighting device can be moved in the X1-X2 direction, or as shown in CM of Figure 9, the substrate recognition camera 44 can be moved in the X1-X2 direction, or as shown in DM of Figure 9, the die D (substrate S) can be moved in the X1-X2 direction.

In the second variation, the bending of grain D can be checked during the grain bonding process, making it possible to manage quality issues caused by the presence or absence of bending. This improves the quality of products that are affected by the presence or absence of grain bending.

(Third Variation) Figure 10 is a diagram showing the configuration of the strip lighting device in the third variation. The second variation illustrates an example where the lighting device 45, configured as a strip lighting device, is arranged in one direction, with the substrate recognition camera 44 as a reference. In contrast, the third variation arranges the lighting device 45 in multiple directions, with the substrate recognition camera 44 as a reference.

As shown in Figure 10, 4DL, the illumination device 45, which is composed of strip-shaped illumination devices, can be positioned in four directions (X1 side, X2 side, Y1 side, Y2 side) with the substrate recognition camera 44 as the center. This allows for the determination of the presence or absence of warping even if the chips D are staggered in any of the four directions to form a stack. Alternatively, instead of arranging the illumination device 45 in multiple directions, one illumination device 45 can be moved in four directions, as shown in Figure 10, 1L4D.

Furthermore, when the mirror image MI of the illumination light from the illumination device 45 (located on the side having a hollow region formed by stacked grains (e.g., the X2 side)) is viewed, the lateral sag of the hollow region can also be detected. In this case, warping is determined based on the mirror image MI of the illumination light from the illumination device 45 located on the X1 side. As shown in Figure 10, 2DL, even if the illumination device 45 is positioned in two directions, the warping and sag of the grain D can be checked. Alternatively, instead of positioning the illumination device 45 in two directions, as shown in Figure 10, 1L2D, one illumination device 45 can be moved in two directions.

(Fourth Variation) The optical system of the fourth variation will be explained using Figure 11. Figure 11 is a diagram showing the optical system, grain D, and its image in the fourth variation.

The lighting device 45 in the fourth variation is a coaxial lighting device with a lens insertion type, which is constructed in the camera body unit 44a.

When the lens embedded in the lens-insertion type coaxial illumination device is a telecentric lens, the lens-insertion type coaxial illumination device illuminates the crystal D with parallel light by reflecting the light from the light source 45a through the internal semi-reflective mirror.

As shown in the NTL in Figure 11, when the level of the grain D is kept extremely accurate, the entire grain D will reflect light, and the mirror image MI of the illumination light will shine into the entire grain D.

As shown in the TLT in Figure 11, when the grain is slightly tilted, it does not reflect light, and the mirror image MI of the illumination light will not shine into the grain D.

The control unit 80 performs image processing on the image of the chip D and determines the tilt of the chip D based on the overall brightness of the chip D. The critical value for tilt determination can be adjusted by selecting the diameter of the point light source 45a.

An aperture can also be provided in the lens of the illumination device 45 or the portion of the light source 45a. This allows adjustment of the parallelism of the illumination light. By adjusting the parallelism, as shown by DFL in Figure 11, when there is a bend DF in the grain D, areas of low brightness (darkness) appear in the image of the grain D. Therefore, slight bends can be detected.

When the lens used in the lighting device 45 is a non-telecentric lens, the mirror image MI projected onto the surface of the grain D forms a blurred circle. The control unit 80 performs image processing on the image of the grain D and determines the presence or absence of the tilt of the grain D by the presence or absence of this circular mirror image MI.

(Fifth Variation) The optical system of the fifth variation will be explained using Figure 12. Figure 12 is a diagram showing the optical system and grain structure of the fifth variation.

In the fifth variation, an illumination device 45, which is a surface-emitting type coaxial illumination device, is provided below the lens unit 44b.

As shown in ALS in Figure 12, the lighting device 45 has a surface-emitting light source 45a and a semi-reflective mirror 45b.

For example, an array of LEDs (Light Emitting Diodes) or ELs (Electronic Luminescent Diodes) is arranged to form a surface-emitting light source 45a. By adjusting the illuminated area of the light source 45a, the tilt of the chip D can be detected. As shown in CLS of Figure 12, the control unit 80 limits the illuminated area to only the central part or a portion by circuit control, and determines the presence or absence of chip tilt by detecting the mirror image MI that shines into the chip D. Here, the illumination device 45 illuminates a circular area in the central part with the same illumination light as a circular light source illumination device.

As shown in the BLS diagram in Figure 12, a liquid crystal panel 45c can also be provided on the light-emitting surface of the light source 45a to adjust the illuminated area. This makes arbitrary and highly flexible control of the illuminated area possible. Here, the illumination device 45 is limited to a rectangular area to emit the same illumination light as the strip illumination device.

By constructing the lighting device 45 using a coaxial lighting device as shown in the BLS of Figure 12, it is possible to generate illumination light for the following embodiments: ring illumination in the embodiment, illumination light for the circular light source (point light source) in the first variation, and illumination light for the strip illumination in the second variation. This makes it possible to inspect the embodiments, the first variation, and the second variation.

Even without using a telecentric lens as in the fourth variation, the fifth variation can still make the illumination a point source. In this way, since the light irradiated to each position on the surface of the grain D is limited, detailed unevenness can be grasped, and it is possible to manage the quality defects caused by the presence or absence of unevenness.

The above describes the specific implementation forms and variations disclosed in this case, but this case is not limited to the above implementation forms and variations, and various changes may also be implemented.

In order to confirm the mirror image of the surface of grain D, the illumination light can be diffused light or parallel light.

In the implementation, the lighting device is illustrated using a ring lighting device as an example, but the ring lighting device is not limited to a circular shape and can also be a polygonal ring lighting device.

In the first variation, the lighting device is illustrated by taking a circular lighting device as an example, but the circular lighting device is not limited to circular shapes. It can also be a circular ring lighting device (ring lighting device) or a polygonal ring lighting device.

Ideally, the substrate identification camera should be set perpendicular to the surface of the substrate S, but depending on the situation, it can also be used to take pictures at an angle using a Scheimpflug lens or the like.

Ideally, the lighting source should have a clear outline, but it can also be a blurred state after passing through a diffuser or similar device. In this case, binary transformation processing or similar methods are used on the image processing side to determine the position or shape of the mirror image.

Alternatively, an image captured when grain D is horizontal can be used as a template and compared with that image during inspection to detect changes in the tilt of grain D. In this case, the comparison is performed using image difference processing, etc.

When multiple lighting devices are set up, the colors of each light can be changed using a color camera. This makes it possible to process the footage in the same shot.

The height of the lighting fixture can be adjusted to match a lens or camera, or it can be left unadjusted.

The best camera lens has a focus adjustment function to focus on the image, but it can also focus on a slightly blurred image even if it is out of focus.

The changes in the shape of the illuminated area, in addition to the circuit control of LEDs or ELs and LCDs, also include the segmented synchronous control of the lighting units, and covers with through holes, etc.

Furthermore, the embodiment illustrates the use of paste as an adhesive, but DAF (Die Attach Film) can also be used.

Furthermore, one embodiment describes an intermediate platform section 30 disposed between the wafer supply section 10 and the bonding section 40, wherein a pick-up head 21 picks up a die D from the wafer supply section 10 and places it on the intermediate platform 31, and the bonding head 41 picks up the die D again from the intermediate platform 31 and bonds it to the transported substrate S. However, it is also possible to use the bonding head 41 to bond the die D picked up from the wafer supply section 10 to the substrate S.

1: Die bonding machine (semiconductor manufacturing equipment) 44: Substrate recognition camera (recognition camera) 45: Illumination device 46: Bonding platform (platform) 80: Control unit (control device)

[Figure 1] is a top view showing a schematic representation of the die bonding machine in one embodiment. [Figure 2] is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. [Figure 3] is a side view showing a schematic representation of the preform section shown in Figure 1. [Figure 4] is a block diagram showing the schematic configuration of the control system of the die bonding machine shown in Figure 1. [Figure 5] is a flowchart showing the manufacturing method of the semiconductor device using the die bonding machine shown in Figure 1. [Figure 6] is a diagram showing the optical system, die, and image of the bonding section shown in Figure 1. [Figure 7] is a diagram showing the optical system, die, and image of a first variation. [Figure 8] is a diagram showing the optical system, die, and image of a second variation. [Figure 9] is a diagram showing the method for moving the mirror image position. [Figure 10] is a diagram showing the configuration of the strip lighting device in a third variation. [Figure 11] is a diagram showing the optical system and grains of the fourth variation. [Figure 12] is a diagram showing the optical system and grains of the fifth variation.

44: Substrate Identification Camera (Identification Camera) 44a: Camera Main Unit 44b: Lens Unit 45: Illumination Device D: Chip C1, C3: Angle MI: Mirror Image IR: Camera Range

Claims (19)

A semiconductor manufacturing apparatus is characterized by comprising: a platform holding a substrate with a die bonded together by an adhesive head; an identification camera disposed above the substrate; an illumination device disposed above the substrate; and a control device configured to illuminate the die with illumination light by the illumination device and to photograph the die with the identification camera, thereby inspecting the bonding state of the die based on the presence or absence of a mirror image of the illumination light, or the position or shape of the mirror image of the illumination light, or the brightness distribution of the mirror image of the illumination light, wherein the control device is configured to determine the presence or absence of tilt of the die based on the presence or absence of a mirror image of the illumination light, or the position or shape of the mirror image. As in the semiconductor manufacturing apparatus of claim 1, the aforementioned illumination device is a lens-insertion type coaxial illumination device of the aforementioned identification camera. As in claim 1, a semiconductor manufacturing apparatus wherein the aforementioned illumination device is a ring illumination device disposed around a lens of the aforementioned identification camera, and the aforementioned identification camera is configured such that the aforementioned die is located on the optical axis of the aforementioned identification camera. As in the semiconductor manufacturing apparatus of claim 3, the aforementioned illumination device is composed of a plurality of ring-shaped illumination devices arranged in a concentric ring, and the aforementioned control device is configured to sequentially illuminate the plurality of ring-shaped illumination devices while simultaneously photographing the aforementioned die with the aforementioned recognition camera at each illumination time, and to determine the tilt amount or direction of the aforementioned die based on the position of the mirror image of the illumination light from the aforementioned ring-shaped illumination devices. As in the semiconductor manufacturing apparatus of claim 1, the aforementioned illumination device is a circular illumination device or a ring illumination device having a circular light source or a point light source, located near the lens of the aforementioned identification camera. When the aforementioned die is bonded parallel to the aforementioned substrate, the aforementioned die is positioned at a position offset from the center of the field of view of the aforementioned identification camera, such that the mirror image of the illumination light of the aforementioned illumination device can illuminate the center of the aforementioned die. As in the semiconductor manufacturing apparatus of claim 5, the aforementioned illumination device is composed of the aforementioned circular illumination device or the aforementioned annular illumination device and a plurality of annular illumination devices arranged concentrically around the aforementioned circular illumination device or the aforementioned annular illumination device. The aforementioned control device is configured to sequentially illuminate the aforementioned circular illumination device or the aforementioned annular illumination device and the aforementioned plurality of annular illumination devices, and at each illumination time, to photograph the aforementioned die with the aforementioned recognition camera, and to determine the tilt amount or direction of the aforementioned die based on the position of the illumination mirror image of the aforementioned circular illumination device or the aforementioned annular illumination device and the aforementioned plurality of annular illumination devices. A semiconductor manufacturing apparatus is characterized by comprising: a platform holding a substrate with a die bonded to it by an adhesive head; an identification camera disposed above the substrate; an illumination device disposed above the substrate; and a control device configured to illuminate the die with illumination light by the illumination device and to image the die with the identification camera, adjusting the image based on the presence or absence of a mirror image of the illumination light, or the position of the mirror image of the illumination light, or the position of the mirror image of the illumination light. The adhesion state of the aforementioned grains is checked by the distribution of the shape or the brightness of the mirror image of the aforementioned illumination light. The aforementioned grains are grains that are stacked on the grains that are adhered to the aforementioned substrate and are offset in a first direction. The aforementioned illumination device is a strip-shaped illumination device that is disposed in a second direction opposite to the aforementioned first direction relative to the aforementioned identification camera. The aforementioned control device is configured to determine whether the aforementioned grains are warped or drooping based on the presence or absence of the mirror image of the illumination light of the aforementioned strip-shaped illumination device. As in the semiconductor manufacturing apparatus of claim 7, the aforementioned illumination device is composed of a plurality of strip illumination devices, and the aforementioned control device is configured to sequentially illuminate the plurality of strip illumination devices while simultaneously photographing the aforementioned die with the aforementioned recognition camera at each illumination, and to determine the warpage of the aforementioned die based on the position of the mirror image of the illumination light from the plurality of strip illumination devices. As in the semiconductor manufacturing apparatus of claim 7, the aforementioned control device is configured to move the position of the aforementioned strip lighting device, the position of the aforementioned recognition camera, or the position of the aforementioned die, while taking pictures of the aforementioned die at each position of the aforementioned strip lighting device using the aforementioned recognition camera, and determining the warpage of the aforementioned die based on the position of the mirror image of the illumination light from the aforementioned strip lighting device. As in claim 7, the semiconductor manufacturing apparatus further comprises: a second strip lighting device disposed in the first direction relative to the identification camera; a third strip lighting device disposed in a third direction orthogonal to the first direction relative to the identification camera; and a fourth strip lighting device disposed in a fourth direction opposite to the third direction relative to the identification camera. As in the semiconductor manufacturing apparatus of claim 7, the aforementioned control device is configured to move the aforementioned strip illumination device in the aforementioned first direction or the aforementioned second direction or a third direction orthogonal to the aforementioned identification camera and the aforementioned first direction or a fourth direction opposite to the aforementioned identification camera and the aforementioned third direction, to illuminate the device with illumination light, and to determine the presence or absence of the aforementioned grain warping based on the presence or absence of the image of the aforementioned illumination light. As in the semiconductor manufacturing apparatus of claim 7, the aforementioned illumination device further includes a second strip-shaped illumination device disposed in the aforementioned first direction relative to the aforementioned identification camera, and the aforementioned control device is configured to illuminate the aforementioned chip with illumination light by the aforementioned second strip-shaped illumination device, and to photograph the aforementioned chip with the aforementioned identification camera, and to determine the presence or absence of the chip sagging based on the presence or absence of the image of the illumination light of the aforementioned second strip-shaped illumination device. As in the semiconductor manufacturing apparatus of claim 7, the aforementioned control device is configured to move the aforementioned strip-shaped illumination device in the aforementioned first direction to illuminate with illumination light, and to determine the presence or absence of the aforementioned grain sagging based on the presence or absence of the mirror image of the aforementioned illumination light. A semiconductor manufacturing apparatus is characterized by comprising: a platform holding a substrate with a die bonded to it by an adhesive head; an identification camera disposed above the substrate; an illumination device disposed above the substrate; and a control device configured to illuminate the die with illumination light by the illumination device and to image the die with the identification camera, adjusting the image based on the presence or absence of a mirror image of the illumination light or the illumination... The adhesion state of the aforementioned grains is checked by the position of the mirror image of the light, the shape of the mirror image of the aforementioned illumination light, or the brightness distribution of the mirror image of the aforementioned illumination light. The aforementioned illumination device is a lens-insertion type coaxial illumination device of the aforementioned identification camera. An aperture is provided in the lens or light source portion of the aforementioned illumination device. The aforementioned control device is configured to detect the curvature of the aforementioned grains based on the brightness distribution of the mirror image of the aforementioned illumination light. As in the semiconductor manufacturing apparatus of claim 1, the aforementioned illumination device is a coaxial illumination device having a surface-emitting light source disposed below a lens of the aforementioned identification camera, and the aforementioned control device is configured to limit the illumination area of the aforementioned surface-emitting light source to only the central part or a portion thereof. As in the semiconductor manufacturing apparatus of claim 4 or 6, the aforementioned control device is configured to report an error, or register a defect in the aforementioned grain, or repressurize the aforementioned grain with the aforementioned bonding head when the tilt amount of the aforementioned grain exceeds a predetermined value. The semiconductor manufacturing apparatus of claim 4 or 6 further includes a syringe for applying paste to a substrate, wherein the aforementioned die is adhered to the aforementioned substrate on which the aforementioned paste has been applied, and the aforementioned control device is configured to adjust the amount of paste applied according to the tilt and orientation of the aforementioned die. An inspection apparatus is characterized by comprising: a platform holding a substrate with adhered chips; a recognition camera disposed above the substrate; an illumination device disposed above the substrate; and a control device configured to illuminate the chips with illumination light by the illumination device and to image the chips with the recognition camera, adjusting the image based on the presence or absence of a mirror image of the illumination light or the aforementioned... The state of the aforementioned grains is checked by the position of the mirror image of the illumination light, the shape of the mirror image of the illumination light, or the distribution of the brightness of the mirror image of the illumination light. The aforementioned control device is configured to determine whether the aforementioned grains are tilted, warped, drooping, or bent based on the presence or absence of the mirror image of the illumination light, the position or shape of the mirror image. A method for manufacturing a semiconductor device is characterized by comprising: a step of transferring a substrate into a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus comprising a platform for holding the substrate, a recognition camera disposed above the substrate, and an illumination device disposed above the substrate; a bonding step of bonding a die to the substrate; and an inspection step wherein the illumination device is used to illuminate the die with illumination light, and The aforementioned identification camera is used to photograph the aforementioned grains. The presence or absence of the aforementioned illumination light image, or the position of the aforementioned illumination light image, or the shape of the aforementioned illumination light image, or the distribution of the brightness of the aforementioned illumination light image, is used to determine whether the aforementioned grains are tilted, warped, drooping, or bent, and thus the state of the aforementioned grains is inspected.