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TW202601838A - Semiconductor manufacturing apparatus and method for manufacturing semiconductor device - Google Patents

Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

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Publication number
TW202601838A
TW202601838A TW114105368A TW114105368A TW202601838A TW 202601838 A TW202601838 A TW 202601838A TW 114105368 A TW114105368 A TW 114105368A TW 114105368 A TW114105368 A TW 114105368A TW 202601838 A TW202601838 A TW 202601838A
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Taiwan
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camera
substrate
lens
aforementioned
die
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TW114105368A
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Chinese (zh)
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小橋英晴
蒔田美明
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日商捷進科技有限公司
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Publication of TW202601838A publication Critical patent/TW202601838A/en

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Abstract

[課題]在於提供可將定位的精度予以提升的的技術。   [解決手段]半導體製造裝置,具備:攝像裝置,其具有對具有被載置晶粒的凸出(tabe)區域與基準標記的基板進行攝影的第一相機,具有對前述基準標記進行攝影的第二相機,以及具有透鏡部;以及同軸照明裝置。前述透鏡部,具有作用為前述第一相機的接物鏡的第一透鏡,具有作用為前述第二相機的接物鏡的第二透鏡,以及具有將來自拍攝對象的反射光分歧至前述第一透鏡與前述第二透鏡的分束器。[Problem] To provide a technology that can improve the accuracy of positioning. [Solution] A semiconductor manufacturing apparatus includes: an imaging device having a first camera for photographing a substrate having a tab area with mounted chips and a reference mark, a second camera for photographing the reference mark, and a lens portion; and a coaxial illumination device. The aforementioned lens portion has a first lens that functions as an objective lens for the first camera, a second lens that functions as an objective lens for the second camera, and a beam splitter that branches reflected light from the photographed object to the first lens and the second lens.

Description

半導體製造裝置及半導體裝置之製造方法Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

本揭示有關半導體製造裝置,例如可應用於對具有位置辨識標記的晶粒、基板進行處置的固晶裝置。This disclosure relates to semiconductor manufacturing apparatus, such as a die bonding apparatus applicable to treating dies or substrates with location identification markings.

作為半導體裝置之製程的一程序,從晶圓所分割的晶粒被拾取,所拾取的晶粒被接合於基板。例如,有時以相機對晶粒、基板進行攝影而取得影像,根據該影像而進行晶粒、基板的定位。 [先前技術文獻] [專利文獻]As part of the semiconductor device manufacturing process, dies are picked up from the wafer and bonded to a substrate. For example, sometimes an image is captured by a camera of the die and substrate, and the die and substrate are positioned based on that image. [Prior Art Documents] [Patent Documents]

[專利文獻1]日本特開2022-98312號公報[Patent Document 1] Japanese Patent Application Publication No. 2022-98312

[發明所欲解決之課題]   例如,於上述的定位,有時在基板、晶粒之上所形成的位置辨識標記的邊緣被用作為基準位置。此情況下,有時難精度佳地取得邊緣的位置(基準位置)。[Problem to be Solved by the Invention] For example, in the aforementioned positioning, sometimes the edge of the position identification mark formed on the substrate or die is used as a reference position. In this case, it is sometimes difficult to obtain the position of the edge (reference position) with good accuracy.

本揭示的課題,在於提供可將定位的精度予以提升的技術。其他的課題與新穎的特徵,將從本說明書的記述及圖式而趨於清楚。 [用於解決課題之手段]The problem disclosed herein lies in providing a technique that can improve positioning accuracy. Other problems and novel features will become clear from the description and diagrams in this manual. [Means used to solve the problem]

簡單說明本揭示之中具代表性者的概要時,如下述。   亦即,半導體製造裝置,具備:攝像裝置,其具有對具有被載置晶粒的凸出(tabe)區域與基準標記的基板進行攝影的第一相機,具有對前述基準標記進行攝影的第二相機,以及具有透鏡部;以及同軸照明裝置。前述透鏡部,具有作用為前述第一相機的接物鏡的第一透鏡,具有作用為前述第二相機的接物鏡的第二透鏡,以及具有將來自拍攝對象的反射光分歧至前述第一透鏡與前述第二透鏡的分束器。 [發明功效]A brief summary of representative embodiments of this disclosure is as follows: Specifically, a semiconductor manufacturing apparatus includes: an imaging device having a first camera for photographing a substrate having a tab area with mounted chips and reference marks, a second camera for photographing the aforementioned reference marks, and a lens portion; and a coaxial illumination device. The aforementioned lens portion has a first lens acting as an objective lens for the aforementioned first camera, a second lens acting as an objective lens for the aforementioned second camera, and a beam splitter that branches reflected light from the photographed object to the aforementioned first lens and the aforementioned second lens. [Invention Benefits]

依本揭示時,可將定位的精度予以提升。According to the disclosure, the accuracy of positioning can be improved.

以下,針對實施方式及變形例,利用圖式進行說明。其中,於以下的說明,有時對相同構成要素標注相同符號,省略反覆的說明。另外,圖式方面,為了使說明更明確,比起實際的態樣,有時針對各部分的寬、厚度、形狀等而示意地表現。此外,複數個圖式的彼此間,各要素的尺寸的關係、各要素的比率等,亦未必一致。The following explanations, including embodiments and variations, will use diagrams. In these explanations, the same symbols may be used to label the same constituent elements, omitting repetitive descriptions. Furthermore, to make the explanations clearer, the width, thickness, shape, etc., of each part may be schematically represented rather than the actual appearance. Additionally, the dimensional relationships and ratios of elements may not be consistent across multiple diagrams.

針對為實裝裝置的一實施方式之固晶裝置的構成,利用圖1至圖2進行說明。圖1為針對實施方式中的固晶裝置的構成例進行繪示的示意俯視圖。圖2為針對圖1中從箭頭A方向觀看時的示意構成進行說明的圖。The configuration of a die bonding device according to one embodiment of the device will be explained using Figures 1 and 2. Figure 1 is a schematic top view illustrating an example configuration of the die bonding device in the embodiment. Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1.

固晶裝置1,大致區別時,具有:晶圓供應部10;拾取部20;中間台部30;接合部40;搬送部50;基板供應部60;基板搬出部70;以及控制部(控制裝置)80。Y2-Y1方向為固晶裝置1的前後方向,X2-X1方向為左右方向,Z1-Z2方向為上下方向。晶圓供應部10配置於固晶裝置1的前側,接合部40配置於後側。The die bonding apparatus 1, generally speaking, includes: a wafer supply unit 10; a pick-up unit 20; an intermediate stage unit 30; a bonding unit 40; a transport unit 50; a substrate supply unit 60; a substrate removal unit 70; and a control unit (control device) 80. The Y2-Y1 direction is the front-to-back direction of the die bonding apparatus 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-and-down direction. The wafer supply unit 10 is disposed on the front side of the die bonding apparatus 1, and the bonding unit 40 is disposed on the rear side.

晶圓供應部10,具有:晶圓盒升降器11;晶圓保持台12;剝離單元13;以及晶圓辨識相機14。The wafer supply unit 10 includes: a wafer cassette lifter 11; a wafer holding stage 12; a stripping unit 13; and a wafer identification camera 14.

晶圓盒升降器11,使儲存複數個晶圓環WR的晶圓盒(未圖示)上下動至晶圓搬送高度。晶圓修正槽(未圖示),進行從晶圓盒升降器11所供應的晶圓環WR的對準。晶圓提取器(wafter extractor)(未圖示)將晶圓環WR從晶圓盒取出而供應至晶圓保持台12,從晶圓保持台12取出而收納於晶圓盒。The wafer cassette lifter 11 moves the wafer cassette (not shown) storing a plurality of wafer rings (WRs) up and down to the wafer transport height. The wafer alignment slot (not shown) aligns the wafer rings (WRs) supplied from the wafer cassette lifter 11. The wafer extractor (not shown) removes the wafer rings (WRs) from the wafer cassette and supplies them to the wafer holding stage 12, from which they are removed and stored in the wafer cassette.

在切割帶DT上黏合(黏貼)有晶圓W,該晶圓W分割為複數個晶粒D。切割帶DT為晶圓環WR所保持。晶圓W,例如為半導體晶圓、玻璃晶圓等,晶粒D為半導體晶片、玻璃晶片等。亦可在晶圓W與切割帶DT之間貼附有稱為晶粒貼附膜(DAF)的膜狀的黏合材料DF。黏合材料DF因加熱而硬化。A wafer W, divided into a plurality of dies D, is bonded (attached) to a dicing tape DT. The dicing tape DT is held by a wafer ring WR. The wafer W is, for example, a semiconductor wafer, a glass wafer, etc., and the dies D are semiconductor wafers, glass wafers, etc. Alternatively, a film-like adhesive material DF, called a die-attach film (DAF), can be attached between the wafer W and the dicing tape DT. The adhesive material DF hardens upon heating.

晶圓保持台12,利用未圖示的驅動部而移動於X1-X2方向及Y1-Y2方向,使進行拾取的晶粒D移動至剝離單元13的位置。此外,晶圓保持台12,利用未圖示的驅動部,於XY平面內使晶圓環WR旋轉。剝離單元13,利用未圖示的驅動部而移動於上下方向。剝離單元13從切割帶DT將晶粒D進行剝離。The wafer holding stage 12 moves along the X1-X2 and Y1-Y2 directions using a drive unit (not shown) to move the picked-up die D to the position of the peeling unit 13. Furthermore, the wafer holding stage 12 rotates the wafer ring WR in the XY plane using a drive unit (not shown). The peeling unit 13 moves vertically using a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

晶圓辨識相機14,辨識從晶圓W拾取的晶粒D的拾取位置,或進行晶粒D的表面檢查。The wafer identification camera 14 identifies the pickup position of the die D picked up from the wafer W, or performs surface inspection of the die D.

拾取部20,具有拾取頭21與拾取頭台23。於取頭21,設有將所剝離的晶粒D吸附保持於頂端的夾持部22。拾取頭21從晶圓供應部10拾取晶粒D,載置於中間台31。拾取頭台23使拾取頭21移動於Z1-Z2方向、Y1-Y2方向及X1-X2方向。另外,拾取頭台23,亦可使拾取頭21進行旋轉。The pickup unit 20 includes a pickup head 21 and a pickup head stage 23. The pickup head 21 has a clamping portion 22 that holds the peeled die D at its top. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head stage 23 moves the pickup head 21 in the Z1-Z2, Y1-Y2, and X1-X2 directions. Additionally, the pickup head stage 23 can also rotate the pickup head 21.

中間台部30,具有:載置晶粒D的中間台31;以及供於辨識中間台31上的晶粒D用的台辨識相機34。中間台31具備將所載置的晶粒D進行吸附的吸引孔。所載置的晶粒D,暫時地為中間台31所保持。中間台31,為載置晶粒D的載台,同時亦為拾取晶粒D的拾取台。The intermediate stage 30 includes: an intermediate stage 31 for mounting a die D; and a stage recognition camera 34 for identifying the die D on the intermediate stage 31. The intermediate stage 31 has an attraction hole for adsorbing the mounted die D. The mounted die D is temporarily held by the intermediate stage 31. The intermediate stage 31 serves as both a platform for mounting the die D and a pickup stage for picking up the die D.

接合部40,具有:接合頭41;接合頭台43;基板辨識相機44;以及接合台46。於接合頭41,設有將晶粒D吸附保持於頂端的夾持部42。接合頭台使接合頭41移動於Z1-Z2方向、Y1-Y2方向及X1-X2方向。另外,接合頭台43,亦可使接合頭41進行旋轉。基板辨識相機44對基板S進行攝像,對接合位置進行辨識。此處,基板S,例如包括佈線基板、引線框架、玻璃基板等。於基板S,形成有成為最後一個封裝的複數個製品區域(以下,稱為封裝區域P)。此外,於基板S,形成有封裝區域P的位置辨識標記(未圖示)。接合台46,在晶粒D被載置於基板S之際,被予以上升,將基板S從下方進行支撐。接合台46,具有供於將基板S進行真空吸附用的吸引口(未圖示),可將基板S進行固定。接合台46具有將基板S進行加熱的加熱部(未圖示)。The bonding portion 40 includes: a bonding head 41; a bonding head stage 43; a substrate identification camera 44; and a bonding platform 46. The bonding head 41 has a clamping portion 42 for holding the die D at its top. The bonding head stage moves the bonding head 41 in the Z1-Z2, Y1-Y2, and X1-X2 directions. The bonding head stage 43 can also rotate the bonding head 41. The substrate identification camera 44 captures an image of the substrate S and identifies the bonding position. Here, the substrate S may include, for example, a wiring substrate, a lead frame, or a glass substrate. A plurality of product regions (hereinafter referred to as packaging regions P) are formed on the substrate S to form the final package. Furthermore, a position identification mark (not shown) for the packaging regions P is formed on the substrate S. The bonding stage 46 is raised when the die D is placed on the substrate S, supporting the substrate S from below. The bonding stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, which can fix the substrate S. The bonding stage 46 has a heating section (not shown) for heating the substrate S.

依如此的構成,接合頭41,根據台辨識相機34的攝像資料對拾取位置、姿勢進行校正,從中間台31拾取晶粒D。並且,接合頭41,根據基板辨識相機44的攝像資料而接合於基板S的封裝區域P上,或以在已接合於基板S的封裝區域P之上的晶粒之上進行積層的形式進行接合。With this configuration, the bonding head 41 corrects the pickup position and posture based on the image data from the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Furthermore, the bonding head 41 is bonded to the packaging area P of the substrate S based on the image data from the substrate recognition camera 44, or is bonded in the form of stacking on the die already bonded to the packaging area P of the substrate S.

搬送部50,具有將基板S抓住並搬送的搬送爪51;以及基板S進行移動的搬送通道52。基板S,將設於搬送通道52的搬送爪51的未圖示的螺帽以沿著搬送通道52而設的未圖示的滾珠螺桿進行驅動,從而移動於X1方向。利用如此的構成,基板S,從基板供應部60沿著搬送通道52移動至接合位置,接合後,移動至基板搬出部70,將基板S遞交給基板搬出部70。The conveying unit 50 includes a conveying claw 51 for gripping and conveying a substrate S, and a conveying channel 52 for moving the substrate S. The substrate S is moved in the X1 direction by a nut (not shown) provided on the conveying claw 51 in the conveying channel 52, which is driven by a ball screw (not shown) provided along the conveying channel 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the conveying channel 52 to the engagement position, and after engagement, moves to the substrate delivery unit 70, where the substrate S is handed over.

基板供應部60,將儲存並搬入於搬送治具的基板S從搬送治具取出而供應至搬送部50。基板搬出部70,將利用搬送部50所搬送的基板S儲存於搬送治具。The substrate supply unit 60 takes the substrate S stored and moved into the transport fixture from the transport fixture and supplies it to the transport unit 50. The substrate removal unit 70 stores the substrate S transported by the transport unit 50 in the transport fixture.

接著,針對控制部80利用圖3進行說明。圖3為針對示於圖1的固晶裝置的控制系統的示意構成進行繪示的方塊圖。Next, the control unit 80 will be explained using FIG3. FIG3 is a block diagram illustrating the schematic configuration of the control system of the die bonding device shown in FIG1.

控制系統8,具備控制部(控制裝置)80、驅動部86、訊號部87以及光學系統88。控制部80,大致區別時被構成為一電腦,其中,該電腦,為具備主要由CPU(Central Processing Unit:中央處理單元)而構成的控制與運算裝置81、記憶裝置82、輸出入裝置83、匯流排線84以及電源部85者。記憶裝置82具有主記憶裝置82a與輔助記憶裝置82b。主記憶裝置82a,以記憶有處理程式等的RAM(Random Access Memory:隨機存取記憶體)而構成。輔助記憶裝置82b,以記憶有控制所需的控制資料、影像資料等的HDD(Hard Disk Drive:硬碟)、SSD(Solid State Drive:固態硬碟)等而構成。此外,於控制部80,呈可連接外部記憶裝置。The control system 8 includes a control unit (control device) 80, a driver unit 86, a signal unit 87, and an optical system 88. The control unit 80 is generally configured as a computer, which includes a control and calculation device 81 mainly composed of a CPU (Central Processing Unit), a memory device 82, an input/output device 83, bus cables 84, and a power supply unit 85. The memory device 82 includes a main memory device 82a and an auxiliary memory device 82b. The main memory device 82a is configured with RAM (Random Access Memory) that stores processing programs, etc. The auxiliary memory device 82b is configured to store control data, image data, etc., required for control, such as HDD (Hard Disk Drive) or SSD (Solid State Drive). Furthermore, the control unit 80 is equipped with an external memory device that can be connected.

輸出入裝置83,具有:監視器83a,其顯示裝置狀態、資訊等;觸控面板83b,其輸入操作員的指示;滑鼠83c等指向裝置,其操作監視器83a;以及影像取入裝置83d,其取入來自光學系統88的影像資料。輸出入裝置83,進一步具有馬達控制裝置83e與I/O訊號控制裝置83f。馬達控制裝置83e,對晶圓供應部10的XY台(未圖示)、拾取頭台23及接合頭台43等驅動部86進行控制。I/O訊號控制裝置83f,從訊號部87的各種的感測器取入訊號,或控制對訊號部87的照明裝置等的亮度進行控制的開關、旋鈕、對真空吸附進行控制的閥等。於光學系統88,包含晶圓辨識相機14、台辨識相機34、基板辨識相機44。晶圓辨識相機14、台辨識相機34及基板辨識相機44將光強度、色進行數值化。控制運算裝置81經由匯流排線84將必要的資料進行取入並運算,為拾取頭21等的控制、監視器83a等而傳送資訊。The input/output device 83 includes: a monitor 83a that displays device status, information, etc.; a touch panel 83b that inputs operator instructions; a pointing device such as a mouse 83c that operates the monitor 83a; and an image acquisition device 83d that acquires image data from the optical system 88. The input/output device 83 further includes a motor control device 83e and an I/O signal control device 83f. The motor control device 83e controls the drive units 86 of the wafer supply section 10, including the XY stage (not shown), the pick-up head 23, and the bonding head 43. The I/O signal control device 83f receives signals from various sensors in the signal unit 87, or controls switches, knobs, valves, etc., that control the brightness of illumination devices, etc., in the signal unit 87. The optical system 88 includes a wafer identification camera 14, a stage identification camera 34, and a substrate identification camera 44. The wafer identification camera 14, stage identification camera 34, and substrate identification camera 44 digitize light intensity and color. The control and calculation device 81 receives and processes necessary data via bus 84, and transmits information to the control of the pickup head 21, the monitor 83a, etc.

控制部80經由影像取入裝置83d將以晶圓辨識相機14、台辨識相機34及基板辨識相機44所攝像的影像資料保存於記憶裝置82。利用根據所保存的影像資料而編程的軟體,使用控制與運算裝置81,進行晶粒D及基板S的封裝區域P的定位,以及進行晶粒D及基板S的外觀檢查。根據控制與運算裝置81所算出的晶粒D及基板S的封裝區域P的位置,利用軟體,經由馬達控制裝置83e而將驅動部86進行驅動。利用此程序進行晶圓上的晶粒的定位,將拾取頭台23及接合頭台43予以動作,將晶粒D接合於基板S的封裝區域P上。The control unit 80 stores image data captured by the wafer identification camera 14, the stage identification camera 34, and the substrate identification camera 44 in the memory device 82 via the image acquisition device 83d. Using software programmed based on the stored image data, the control and calculation device 81 performs positioning of the die D and the packaging area P of the substrate S, as well as an appearance inspection of the die D and the substrate S. Based on the position of the die D and the packaging area P of the substrate S calculated by the control and calculation device 81, the drive unit 86 is driven via the motor control device 83e using the software. Using this procedure, the die on the wafer is positioned, the pickup head 23 and the bonding head 43 are activated, and the die D is bonded to the packaging area P of the substrate S.

控制部80,可將儲存於外部記憶裝置的上述的程式,利用安裝於電腦而構成。外部記憶裝置,例如包含HDD、USB記憶體、SSD等。輔助記憶裝置82b、外部記憶裝置,被構成為可電腦讀取的記錄媒體。以下,亦將此等總稱而僅稱為記錄媒體。於本說明書中使用了記錄媒體如此的詞語的情況下,包含以下情況:僅包含輔助記憶裝置82b單體;僅包含外部記憶裝置單體;或包含該等雙方。另外,往電腦的程式、資料的提供及從電腦往外部裝置的程式、資料的提供,亦可在不使用外部記憶裝置之下,利用網際網路、專用線路等通訊手段而進行。The control unit 80 is configured to install the aforementioned program stored in an external memory device onto a computer. The external memory device includes, for example, an HDD, USB memory, or SSD. The auxiliary memory device 82b and the external memory device constitute a computer-readable recording medium. Hereinafter, these will be referred to collectively only as recording media. When the term "recording media" is used in this specification, it includes: only the auxiliary memory device 82b unit; only the external memory device unit; or both. In addition, the provision of programs and data to computers and the provision of programs and data from computers to external devices can also be carried out using communication means such as the Internet and dedicated lines without the use of external memory devices.

針對使用固晶裝置1的情況下的半導體裝置的製程的一部分(半導體裝置的製造方法),利用圖4進行說明。圖4為針對使用示於圖1的固晶裝置的情況下的半導體裝置的製造方法進行繪示的流程圖。於以下的說明,構成固晶裝置1的各部分的動作,利用控制部80而控制。A portion of the semiconductor device manufacturing process (semiconductor device manufacturing method) using the die bonding device 1 will be explained using FIG4. FIG4 is a flowchart illustrating the semiconductor device manufacturing method using the die bonding device shown in FIG1. In the following explanation, the operation of each part constituting the die bonding device 1 is controlled by the control unit 80.

(晶圓搬入程序:程序S1)   收納有晶圓環WR的晶圓盒被投入於晶圓盒升降器11。所投入的晶圓環WR被供應(搬入)至晶圓保持台12。(Wafer loading procedure: Procedure S1) The wafer cassette containing the wafer ring WR is loaded into the wafer cassette lift 11. The loaded wafer ring WR is then fed (loaded) into the wafer holding stage 12.

(基板搬入程序:程序S2)   儲存有基板S的搬送治具被投入至基板供應部60。於基板供應部60,儲存於搬送治具的基板S被從搬送治具取出。並且,經由搬送部50而供應(搬入)至接合部40。(Substrate loading procedure: Procedure S2) A transport fixture storing substrate S is loaded into substrate supply unit 60. In substrate supply unit 60, substrate S stored in the transport fixture is removed from the transport fixture. And, it is supplied (loaded) to joint unit 40 via transport unit 50.

(拾取程序:程序S3)   程序S1後,以可從切割帶DT拾取期望的晶粒D的方式移動晶圓保持台12。利用晶圓辨識相機14對晶粒D進行攝影,根據利用攝影所取得的影像資料,進行晶粒D的定位及表面檢查。對影像資料進行影像處理,從而算出晶圓保持台12上的晶粒D從固晶裝置的晶粒位置基準點的偏移量(X、Y、θ方向)而進行定位。另外,晶粒位置基準點,預先將晶圓保持台12的既定的位置保持作為裝置的初始設定。對影像資料進行影像處理,從而進行晶粒D的表面檢查。(Pickup Procedure: Procedure S3) After Procedure S1, the wafer holding stage 12 is moved in a manner that allows the desired die D to be picked up from the dicing tape DT. The die D is photographed using the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data obtained from the photograph. Image processing is performed on the image data to calculate the offset (X, Y, θ directions) of the die D on the wafer holding stage 12 from the die position reference point of the die bonding device, and the position is then determined. Furthermore, the die position reference point is pre-set at a predetermined position on the wafer holding stage 12 as the initial setting of the device. Image processing is performed on the image data to inspect the surface of the die D.

所定位的晶粒D,利用剝離單元13及拾取頭21從切割帶DT進行剝離。從切割帶DT所剝離的晶粒D,為設於拾取頭21的夾持部22所吸附、保持,搬送並載置於中間台31。The positioned grain D is peeled off from the cutting strip DT using the peeling unit 13 and the pick-up head 21. The grain D peeled off from the cutting strip DT is adsorbed and held by the clamping part 22 provided in the pick-up head 21, and then transported and placed on the intermediate stage 31.

利用台辨識相機34對中間台31之上的晶粒D進行攝影,根據利用攝影所取得的影像資料,進行晶粒D的定位及表面檢查。對影像資料進行影像處理,從而算出中間台31上的晶粒D從固晶裝置的晶粒位置基準點的偏移量(X、Y、θ方向)而進行定位。另外,晶粒位置基準點,預先將中間台31的既定的位置保持作為裝置的初始設定。對影像資料進行影像處理,從而進行晶粒D的表面檢查。A stage recognition camera 34 is used to photograph the die D on the intermediate stage 31. Based on the image data obtained from the photograph, the die D is positioned and its surface is inspected. Image processing is performed on the image data to calculate the offset (X, Y, θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonding device, and the die D is positioned accordingly. In addition, the die position reference point is pre-set with a predetermined position of the intermediate stage 31 as the initial setting of the device. Image processing is performed on the image data to inspect the surface of the die D.

將晶粒D搬送至中間台31的拾取頭21,被送返至晶圓供應部10。依上述的順序,下個晶粒D被從切割帶DT剝離,之後依同樣的順序,從切割帶DT,晶粒D被1次1個進行剝離。The pick-up head 21, which transports die D to the intermediate stage 31, is returned to the wafer supply section 10. Following the above sequence, the next die D is peeled off from the dicing tape DT, and then, following the same sequence, dies D are peeled off one at a time from the dicing tape DT.

(接合程序:程序S4)   利用搬送部50,基板S被搬送至接合台46。被載置於接合台46上的基板S被利用基板辨識相機44進行攝像,利用攝影而取得影像資料。影像資料被影像處理,從而算出基板S從固晶裝置1的基板位置基準點的偏移量(X、Y、θ方向)。另外,基板位置基準點,預先將接合部40的既定的位置保持作為裝置的初始設定。(Bonding Procedure: Procedure S4) The substrate S is transported to the bonding stage 46 via the transport unit 50. The substrate S, placed on the bonding stage 46, is imaged using the substrate recognition camera 44, and image data is acquired. The image data is processed to calculate the offset (X, Y, θ directions) of the substrate S from the substrate position reference point of the die bonding device 1. Furthermore, the substrate position reference point is pre-set with a predetermined position of the bonding portion 40 as the initial setting of the device.

根據在程序S3所算出的中間台31上的晶粒D的偏移量,接合頭41的吸附位置被校正,晶粒D被利用夾持部42進行吸附。利用從中間台31吸附了晶粒D的接合頭41,使晶粒D接合於為接合台46所支撐的基板S的既定處。利用基板辨識相機44對接合於基板S的晶粒D進行攝影,根據利用攝影所取得的影像資料,進行晶粒D是否接合於期望的位置的檢查(晶粒D與基板S的相對位置檢查)等。Based on the offset of the die D on the intermediate stage 31 calculated in program S3, the adsorption position of the bonding head 41 is corrected, and the die D is adsorbed by the clamping part 42. Using the bonding head 41 that has adsorbed the die D from the intermediate stage 31, the die D is bonded to a predetermined position on the substrate S supported by the bonding stage 46. The substrate recognition camera 44 takes a picture of the die D bonded to the substrate S, and based on the image data obtained by the camera, checks are performed to see if the die D is bonded to the desired position (relative position check of the die D and the substrate S), etc.

將晶粒D接合於基板S的接合頭41,被送返至中間台31。依上述的順序,下個晶粒D被從中間台31拾取,接合於基板S。此被反覆進行,晶粒D被接合於基板S的所有的封裝區域P。The die D is bonded to the substrate S via the bonding head 41 and then returned to the intermediate stage 31. In the same sequence, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This process is repeated until the die D is bonded to all the packaging areas P of the substrate S.

(基板搬出程序:程序S5)   利用搬送部50,接合了晶粒D的基板S被從接合部40搬送至基板搬出部70。於基板搬出部70,基板S被取出而儲存於搬送治具,基板S被搬出。從固晶裝置1搬出儲存著基板S的搬送治具。(Substrate removal procedure: Procedure S5) Using the transport unit 50, the substrate S with the bonded die D is transported from the bonding unit 40 to the substrate removal unit 70. At the substrate removal unit 70, the substrate S is removed and stored in the transport fixture, and the substrate S is removed. The transport fixture storing the substrate S is removed from the die bonding device 1.

如上述般,晶粒D,被實裝於基板S上,被從固晶裝置1搬出。之後,例如,儲存了實裝有晶粒D的基板S的搬送治具被搬送至打線接合程序,晶粒D的電極經由Au金屬線等而和基板S的電極進行電連接。並且,基板S被搬送至壓模程序,將晶粒D與Au金屬線以壓模樹脂(未圖示)進行密封,從而完成半導體封裝。As described above, die D is mounted on substrate S and removed from die bonding device 1. Then, for example, a transport fixture storing substrate S with die D mounted is transported to a wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au metal wires, etc. Furthermore, substrate S is transported to a molding process, where die D and Au metal wires are sealed with molding resin (not shown), thereby completing semiconductor packaging.

接著,針對接合部40的光學系統利用圖5進行說明。圖5為針對接合部的光學系統的一例進行繪示的圖。Next, the optical system for the joint 40 will be explained using FIG5. FIG5 is a diagram illustrating an example of the optical system for the joint.

作為攝像裝置的基板辨識相機44,具備第一相機441、第二相機442以及被安裝第一相機441及第二相機442的透鏡部443。第一相機441及第二相機442,成為通過透鏡部443對基板S的主面(表面、上表面)或接合於基板S的晶粒D的主面進行攝影的構成。在透鏡部443與基板S等之間,配置有照明裝置45。第一相機441及照明裝置45,配置在為攝影對象(拍攝對象)的基板S的封裝區域P的正上方。The substrate recognition camera 44, which serves as an imaging device, includes a first camera 441, a second camera 442, and a lens 443 on which the first camera 441 and the second camera 442 are mounted. The first camera 441 and the second camera 442 are configured to capture images of the main surface (surface, upper surface) of the substrate S or the main surface of the grain D bonded to the substrate S through the lens 443. An illumination device 45 is disposed between the lens 443 and the substrate S, etc. The first camera 441 and the illumination device 45 are disposed directly above the packaging area P of the substrate S, which is the object of imaging (the object being photographed).

透鏡部443,具備第一透鏡443a與第二透鏡443b。透鏡部443,更具備設於第一透鏡443a與照明裝置45之間的半反射鏡(分束器)443c,以及具備設於第二相機442與第二透鏡443b之間的反射鏡443d。透鏡部443的各構成要素亦可作成為收納於鏡筒(筒體)內,在鏡筒分別固定第一相機441及第二相機442。The lens section 443 includes a first lens 443a and a second lens 443b. The lens section 443 further includes a semi-reflective mirror (beam splitter) 443c disposed between the first lens 443a and the illumination device 45, and a reflector 443d disposed between the second camera 442 and the second lens 443b. The components of the lens section 443 can also be housed within a lens barrel (body), with the first camera 441 and the second camera 442 respectively fixed within the lens barrel.

例如,第一相機441為以低倍率(低解析度)對拍攝對象進行攝影的相機。第二相機442為以高倍率(高解析度)對拍攝對象進行攝影的相機。此處,低倍率,為可獲得定位所需的充分的視野的倍率。高倍率,為可獲得能以高精度對後述的基準引線的邊緣進行檢測的像素解析度的倍率。另外,第一相機441為以高倍率(高解析度)對拍攝對象進行攝影的相機,第二相機442亦可為以低倍率(低解析度)對拍攝對象進行攝影的相機。For example, the first camera 441 is a camera that photographs the subject at low magnification (low resolution). The second camera 442 is a camera that photographs the subject at high magnification (high resolution). Here, "low magnification" refers to a magnification that provides a sufficient field of view for positioning. "High magnification" refers to a magnification that provides a pixel resolution capable of detecting the edges of the reference lines described later with high precision. Alternatively, while the first camera 441 photographs the subject at high magnification (high resolution), the second camera 442 can also be a camera that photographs the subject at low magnification (low resolution).

第一透鏡443a為設於第一相機441與半反射鏡443c之間的接物鏡。第二透鏡443b為設於反射鏡443d與半反射鏡443c之間的接物鏡。半反射鏡443c,將從Z2側入射於Z1側的光(光軸OA)予以分歧為往Z1側的透射光(光軸OA1)與往X1側的反射光(光軸OA2)。反射鏡443d,將來自半反射鏡443c的反射光予以反射至Z1側。The first lens 443a is an objective lens disposed between the first camera 441 and the semi-reflective mirror 443c. The second lens 443b is an objective lens disposed between the reflector 443d and the semi-reflective mirror 443c. The semi-reflective mirror 443c splits the light (optical axis OA) incident from the Z2 side onto the Z1 side into transmitted light (optical axis OA1) towards the Z1 side and reflected light (optical axis OA2) towards the X1 side. The reflector 443d reflects the reflected light from the semi-reflective mirror 443c back to the Z1 side.

第一相機441及第二相機442的像素數,例如為30萬像素~6000萬像素。例如,使第一相機441與第二相機442為相同程度的像素數的情況下,將第一透鏡443a的倍率設定為比第二透鏡443b的倍率小。據此,第一相機441的解析度變比第二相機442的解析度小。使第一相機441的像素數比第二相機442的像素數少的情況下,第一透鏡443a與第二透鏡443b設定相同程度的倍率。據此,第一相機441的解析度變比第二相機442的解析度小。The pixel count of the first camera 441 and the second camera 442 is, for example, 300,000 to 60,000,000 pixels. For example, if the first camera 441 and the second camera 442 have the same pixel count, the magnification of the first lens 443a is set to be smaller than that of the second lens 443b. Accordingly, the resolution of the first camera 441 is smaller than that of the second camera 442. If the pixel count of the first camera 441 is smaller than that of the second camera 442, the magnification of the first lens 443a and the second lens 443b is set to be the same. Accordingly, the resolution of the first camera 441 is smaller than that of the second camera 442.

照明裝置45具備面發光照明(光源)451及半反射鏡452於鏡筒內部。來自面發光照明451的照射光,被利用半反射鏡452而往和第一相機441及第二相機442相同的光軸進行反射,將基板S等進行照射。往和第一相機441及第二相機442相同的光軸OA照射了基板S的光,在基板S等進行反射,該反射光透過半反射鏡452而到達於第一相機441及第二相機442,形成基板S等的映像。亦即,照明裝置45具有同軸落射照明(同軸照明)的功能。The illumination device 45 includes a surface-emitting illumination (light source) 451 and a semi-reflective mirror 452 inside the lens barrel. Irradiation light from the surface-emitting illumination 451 is reflected by the semi-reflective mirror 452 along the same optical axis as the first camera 441 and the second camera 442, illuminating the substrate S, etc. Light illuminating the substrate S along the same optical axis OA as the first camera 441 and the second camera 442 is reflected by the substrate S, etc., and the reflected light passes through the semi-reflective mirror 452 to reach the first camera 441 and the second camera 442, forming an image of the substrate S, etc. That is, the illumination device 45 has the function of coaxial incident illumination (coaxial lighting).

接著,針對用於定位等的基準位置利用圖6進行說明。圖6,為針對設於基板的位置辨識標記及接合中心進行繪示的圖。Next, the reference positions used for positioning, etc., will be explained using Figure 6. Figure 6 is a diagram showing the position identification marks and bonding centers provided on the substrate.

於基板S的各封裝區域P,設有位置辨識標記M。位置辨識標記M,在載置有晶粒D的區域(凸出(tabe)區域)的外側設置至少一個。另外,進行積層接合的情況下,位置辨識標記M有時設於晶粒D上。位置辨識標記M,例如以基準引線而構成。在將晶粒進行接合之際,有時以和基準引線的緣(邊緣、邊界、基準位置)的距離(dx、dy)表現接合中心CB的座標。有時僅將基準引線稱為引線LE。另外,有時以和基準引線之中心CM的距離表現接合中心CB的座標。位置辨識標記M的基準位置可為引線的寬度方向之中心線,亦可為位置辨識標記M之中心或重心。此外,晶粒D側的基準方面,有時代替接合中心CB的座標而使用設於晶粒D的接合墊的角、接合墊之中心的座標。A position identification mark M is provided in each packaging area P of the substrate S. At least one position identification mark M is provided on the outer side of the area (tabe area) where the die D is mounted. Alternatively, in the case of layer bonding, the position identification mark M is sometimes provided on the die D. The position identification mark M is, for example, constructed as a reference lead. When bonding the dies, the coordinates of the bonding center CB are sometimes represented by the distance (dx, dy) from the edge (edge, boundary, reference position) of the reference lead. Sometimes the reference lead is simply referred to as the lead LE. Alternatively, the coordinates of the bonding center CB are sometimes represented by the distance from the center CM of the reference lead. The reference position of the position identification mark M can be the centerline of the lead width direction, or the center or centroid of the position identification mark M. In addition, for the reference on the D side of the die, sometimes the coordinates of the corner of the bonding pad or the center of the bonding pad of the die D are used instead of the coordinates of the bonding center CB .

此情況下,在固晶裝置,需要針對引線LE等的邊緣利用影像處理測定引線LE的寬及引線LE之中心而進行檢測從而掌握基準位置的座標。即使為以基準引線的邊緣、中心及中心線中的任一者為基準的情況,基板辨識相機44,更精確地檢測引線LE等的邊緣的位置,故需要使用高倍率的透鏡而使像素解析度為高精細。In this case, the die bonding device needs to use image processing to measure the width and center of the lead LE and other edges to determine the coordinates of the reference position. Even if the reference is any one of the edge, center, or center line of the reference lead, the substrate recognition camera 44 needs to use a high-magnification lens to achieve high pixel resolution in order to more accurately detect the position of the edge of the lead LE and other edges.

另一方面,基板辨識相機44進行接合位置的辨識(定位)、晶粒或基板S的表面檢查,故需要使用低倍率的透鏡而作成為包含至少一個封裝區域P的廣的視野。On the other hand, the substrate identification camera 44 performs identification (positioning) of the bonding position and surface inspection of the die or substrate S, so it is necessary to use a low magnification lens to create a wide field of view that includes at least one packaging area P.

第一相機441可針對晶粒D及基板S以低倍率進行攝影,同時第二相機442可針對位置辨識標記M以高倍率進行攝影。第一相機441,至少能以包含凸出區域與設於凸出區域的外側的位置辨識標記M的區域作為拍攝對象。第二相機442以位置辨識標記M作為拍攝對象。據此,基板辨識相機44可解決上述的二個課題。The first camera 441 can photograph the die D and the substrate S at low magnification, while the second camera 442 can photograph the position identification mark M at high magnification. The first camera 441 can at least photograph an area including the protruding region and the position identification mark M located on the outer side of the protruding region. The second camera 442 photographs the position identification mark M. Accordingly, the substrate identification camera 44 can solve the two problems mentioned above.

接著,說明有關針對引線LE的邊緣的位置更精確地進行檢測的方法。Next, a method for more accurately detecting the position of the edge of the lead LE will be explained.

首先,針對引線LE及照明裝置進行說明。圖7為針對具有引線的基板的剖面進行繪示的圖。圖8為針對示於圖7的引線與照明裝置的關係進行繪示的圖。First, the lead LE and the lighting device will be explained. Figure 7 is a cross-sectional view of the substrate with the lead. Figure 8 is a diagram showing the relationship between the lead and the lighting device shown in Figure 7.

如示於圖7的A,引線LE的表面(上表面)雖和基板S的表面(上表面)齊面(高度相同)即可,惟引線LE的表面有時和基板S的表面非齊面,引線的表面比基板S的表面突出或凹入,側面亦有時帶有圓弧。例如,如示於圖7的B,引線LE有時相對於基板S的表面呈凸狀,側面發生彎曲。As shown in Figure 7A, the surface (upper surface) of the lead LE can be flush with (at the same height) the surface (upper surface) of the substrate S. However, the surface of the lead LE is sometimes not flush with the surface of the substrate S. The surface of the lead may protrude or be recessed from the surface of the substrate S, and the side may sometimes be curved. For example, as shown in Figure 7B, the lead LE is sometimes convex relative to the surface of the substrate S, and the side is curved.

示於圖7的B的狀態下,即使以高倍率進行觀測,作為照明裝置45使用接近平行光的同軸照明時,如示於圖8的A,僅引線LE之上表面的平坦的部分變亮,故僅可觀測到引線LE之上表面的平坦的部分。As shown in Figure 7B, even when observed at high magnification, when using coaxial illumination with near-parallel light as the illumination device 45, as shown in Figure 8A, only the flat portion of the upper surface of the lead LE becomes bright, so only the flat portion of the upper surface of the lead LE can be observed.

亦能以光照於引線LE側面的方式,作為照明裝置45使用斜光照明。然而,引線LE的反射光,鏡面反射成分多,故如示於圖8的B,僅引線LE的緣變亮,僅引線LE之側面被強調,故影像處理上難針對邊緣進行檢測。原因在於,濃淡分布(亮度:BR)在引線LE之側面成為1對脈衝狀,濃淡分布較佳為矩形波狀。It can also be used as an oblique illumination device 45 by illuminating the side of the lead LE. However, the reflected light from the lead LE has a high specular reflection component, so as shown in Figure 8B, only the edge of the lead LE becomes brighter, and only the side of the lead LE is emphasized, making it difficult to detect the edge in image processing. The reason is that the density distribution (brightness: BR) on the side of the lead LE becomes a pair of pulses, and the density distribution is better as a rectangular wave.

接著,針對對如示於圖7的B的引線LE合適的照明裝置使用圖9進行說明。圖9為針對實施方式中的照明裝置進行說明的圖。Next, a suitable lighting device for lead LE of B as shown in FIG. 7 will be described using FIG. 9. FIG. 9 is a diagram illustrating the lighting device in the embodiment.

如示於圖9的A,作為照明裝置45,使用示於圖5的面發光型的同軸照明裝置為佳。或者,作為照明裝置45,如示於圖9的B,將同軸照明裝置453與半球型照明裝置454進行組合而使用為佳。同軸照明裝置453亦可為示於圖5的面發光型的同軸照明裝置,亦可為平行光型或接近平行光的同軸照明裝置。半球型照明裝置454在頂部之中央具有開口,在開口之上設有同軸照明裝置453。面發光型的同軸照明、半球型照明從拍攝對象觀看時可取大的照明的入射光NA(到達於拍攝對象具有的點的光的範圍),故亦可使光照於引線LE側面。As shown in Figure 9A, it is preferable to use a surface-emitting coaxial lighting device as shown in Figure 5 as the lighting device 45. Alternatively, as shown in Figure 9B, it is preferable to combine the coaxial lighting device 453 with the hemispherical lighting device 454 as the lighting device 45. The coaxial lighting device 453 can also be a surface-emitting coaxial lighting device as shown in Figure 5, or it can be a parallel light type or a near-parallel light coaxial lighting device. The hemispherical lighting device 454 has an opening in the center of its top, and the coaxial lighting device 453 is provided above the opening. The surface-emitting coaxial lighting and the hemispherical lighting can capture a large incident light NA (the range of light reaching the point on the subject) when viewed from the subject, so the light can also illuminate the side of the lead LE.

此時,照明的入射光NA考量以下而決定為佳。以比以此等條件所決定的入射光NA廣的範圍而將照明進行照射即可。At this point, it is best to determine the incident light NA based on the following considerations: Illuminate a range that is wider than the incident light NA determined by these conditions.

(a)從引線LE的邊緣至彎曲開始的位置為止的水平距離(示於圖7的B的d)   (b)引線LE之側面部分的傾斜量(示於圖7的B的θ)   (c)在引線LE的表面的反射光的光強度(a) Horizontal distance from the edge of lead LE to the point where the bend begins (d shown in Figure 7B) (b) Inclination of the side portion of lead LE (θ shown in Figure 7B) (c) Light intensity of reflected light on the surface of lead LE

針對定位的方法例使用圖10及圖11進行說明。圖10為針對教導動作進行說明的圖。圖11為針對生產動作進行說明的圖。The positioning method is illustrated using Figures 10 and 11. Figure 10 illustrates the teaching action. Figure 11 illustrates the production action.

定位運算法,主要採用在使用模版模型的情況下的圖案匹配(採用模版匹配的情況下的搜尋運算法),採用以一般所知的正規化相關匹配法(Normalized Cross Correlation,NCC)的運算、幾何學搜尋等的模型匹配。使該結果為一致率。模版匹配包括基準學習的教導動作與產品組裝的生產動作。The localization algorithm primarily employs pattern matching when using a template model (a search algorithm using template matching), utilizing model matching methods such as the commonly known Normalized Cross Correlation (NCC) and geometric search. The result is then expressed as a consistency rate. Template matching includes both the teaching actions of benchmark learning and the production actions of product assembly.

以基板定位為例進行說明。教導動作,為在示於圖4的晶粒接合程序之前預先進行的動作。The following explanation uses substrate positioning as an example. The teaching action is a pre-operation performed before the die bonding process shown in Figure 4.

控制部80利用基板辨識相機44的第一相機441對基準用基板S進行攝影而取得如示於圖10的影像PCr。利用基板辨識相機44的第二相機442對形成於基準用基板S的位置辨識標記M進行攝影而取得影像。The control unit 80 uses the first camera 441 of the substrate recognition camera 44 to photograph the reference substrate S and obtain the image PCr shown in FIG10. The second camera 442 of the substrate recognition camera 44 photographs the position recognition mark M formed on the reference substrate S and obtains the image.

固晶裝置的操作者利用人機介面(觸控面板83b、滑鼠83c)從影像PCr內選擇包含具特徵性的圖案的唯一區域UA。此處,唯一區域UA的具特徵性的圖案,例如為位置辨識標記M。位置辨識標記M雖示出十字狀之例,惟非限定於此者。例如,亦可將形成於基板S的佈線之中含有具特徵性的圖案(例如,L字狀的圖案)的佈線(引線)、示於圖10的圓形引線作為位置辨識標記M而使用。The operator of the die bonding device uses a human-machine interface (touch panel 83b, mouse 83c) to select a unique region UA containing a characteristic pattern from the image PCr. Here, the characteristic pattern of the unique region UA is, for example, a position identification mark M. Although the position identification mark M is shown as a cross shape, it is not limited to this. For example, a wiring (lead) containing a characteristic pattern (e.g., an L-shaped pattern) formed on the substrate S, such as the circular lead shown in FIG10, can also be used as a position identification mark M.

控制部80將所選擇的唯一區域UA與基準用基板S的位置關係(座標)保存於記憶裝置82。例如,保存相對於位置辨識標記M的基準位置之基準用基板S的接合中心CB等的晶粒側的基準的位置座標(圖6參照)。The control unit 80 stores the positional relationship (coordinates) between the selected unique region UA and the reference substrate S in the memory device 82. For example, it stores the position coordinates of the reference on the grain side of the reference substrate S, such as the bonding center C B , relative to the reference position of the position identification mark M (see FIG6).

控制部80將成為基準的唯一區域UA的影像(以下,稱為模版影像PT)與該座標保存於記憶裝置82。例如,於模版影像PT,包含位置辨識標記M的影像。所保存的模版影像PT的座標,為根據位置辨識標記M的影像而算出的位置辨識標記M之中心CM的位置座標及構成位置辨識標記M的基準引線的引線寬所算出的基準位置(圖6參照)。The control unit 80 stores the image of the unique region UA that serves as the reference (hereinafter referred to as the template image PT) and its coordinates in the memory device 82. For example, the template image PT includes an image of a position identification mark M. The coordinates of the stored template image PT are the reference position calculated based on the position coordinates of the center C M of the position identification mark M calculated from the image of the position identification mark M and the line width of the reference line constituting the position identification mark M (see Figure 6).

接著,針對示於圖4的晶粒接合程序中的生產動作進行說明。Next, the production operations in the grain bonding process shown in Figure 4 will be explained.

於程序S4,控制部80,利用基板辨識相機44的第一相機441對產品用基板S進行攝像,取得示於圖11的影像PCn。In program S4, the control unit 80 uses the first camera 441 of the substrate identification camera 44 to capture an image of the product substrate S, as shown in FIG11.

如示於圖11,控制部80以教導動作將所保存的模版影像PT與產品用基板S的取得影像PCn進行比較,算出最類似的部分的影像PTn的座標。As shown in Figure 11, the control unit 80 compares the saved template image PT with the acquired image PCn of the product substrate S using a teaching action, and calculates the coordinates of the image PTn of the most similar part.

控制部80將影像PTn的座標與以基準用基板S所測定的座標進行比較,算出產品用基板S的位置(影像PTn與模版影像PT的偏移)。The control unit 80 compares the coordinates of the image PTn with the coordinates measured by the reference substrate S and calculates the position of the product substrate S (the offset between the image PTn and the template image PT).

接著,針對採本實施方式的效果進行說明。Next, the effects of this implementation method will be explained.

使用於定位的影像系統,即使為像素解析度比重複接合精度大的值,仍可利用影像處理的統計計算,從而具有接合精度所需的定位性能。然而,此僅為實現了再現性精度,要將晶粒精確地實裝於欲搭載的場所,需要在暫時接合後回授以離線的別的系統所測定的偏位量的結果。此系統雖可擔保接合的再現性,惟將工件的基準面(例如基準引線的邊緣(稱為基準邊緣)以像素解析度以下進行檢測屬難。為此,難實現指定了從基準面的偏移的教導動作。Imaging systems used for positioning can achieve the positioning performance required for bonding accuracy even at pixel resolutions greater than the reproducibility bonding accuracy, thanks to statistical calculations in image processing. However, this only achieves reproducibility accuracy. To accurately mount the die to the desired mounting location, it is necessary to feed back the offset measured by an offline system after temporary bonding. While this system can guarantee bonding reproducibility, it is difficult to detect the workpiece's reference surface (e.g., the edge of the reference lead, called the reference edge) at a resolution below pixel resolution. Therefore, it is difficult to implement a teaching action specifying the offset from the reference surface.

於是,增加倍率而使像素解析度為高精細從而可解決上述的課題。然而,高倍率化招致視野的窄小化,使得無法獲得定位所需的充分的視野。Therefore, increasing the magnification to achieve high pixel resolution can solve the above problem. However, high magnification leads to a narrower field of view, making it impossible to obtain a sufficient field of view for positioning.

利用變焦透鏡或2眼光學系統從而可獲得高倍率與廣視野雙方。然而,存在下述的課題。High magnification and a wide field of view can be achieved by using zoom lenses or a dual-lens optical system. However, the following problems exist.

變焦透鏡雖因可主動化倍率變更而可解決上述的課題,惟具有驅動系統的變焦透鏡的情況下,會受到倍率切換時的視野位置再現性精度的影響。換言之,在倍率變更後返回至原本的倍率時,會包含機械的移動誤差,故無100%的座標再現性。據此,在定位時使用的模版模型與基準邊緣的偏移會包含變異性。此外,雖亦可考慮準備複數個倍率不同的相機而解決上述的課題,惟可能成會任一個相機相對於工件喪失鉛直性(光軸會傾斜)的配置。While zoom lenses can solve the aforementioned problems due to their automatic magnification changes, zoom lenses with drive systems are affected by the accuracy of field-of-view position reproduction during magnification switching. In other words, when returning to the original magnification after a change, mechanical movement errors are included, resulting in no 100% coordinate reproduction. Consequently, the offset between the template model used for positioning and the reference edge will contain variations. Furthermore, while using multiple cameras with different magnifications can solve the problem, this may result in any one camera losing its straightness relative to the workpiece (the optical axis will tilt).

依本實施方式時,發揮下述的至少一個以上的效果。When implemented in this manner, at least one of the following effects is achieved.

(a)將2種倍率的相機以相同光軸而設置,故可維持切換時的視野位置的高的再現性。(a) By setting the two cameras with the same optical axis, a high degree of reproducibility of the field of view position can be maintained when switching.

(b)能以高倍率的光學系統對基準邊緣更精確地進行檢測。據此,使得可針對基準邊緣的模版模型的偏移精確地進行檢測。可使基準邊緣的檢測精度提升。(b) It enables more precise detection of the reference edge using a high-magnification optical system. This allows for accurate detection of offsets in the template model at the reference edge, thus improving the accuracy of reference edge detection.

(c)能以廣視野(低倍率)的光學系統進行在使用圖案匹配的情況下的定位。(c) It can perform positioning using a pattern matching optical system with a wide field of view (low magnification).

(d)利用上述方法,可將以高倍率所指定的定位的基準位置與以低倍率所登錄的模型的偏移穩定而取得(重新進行教導仍可將偏移精確地取得)。(d) Using the above method, the offset between the reference position specified at high magnification and the model registered at low magnification can be obtained stably (the offset can still be obtained accurately after re-teaching).

(e)以離線的偏移測定成為非必要。(e) Off-line offset measurement becomes unnecessary.

<變形例>   以下,針對實施方式的具代表性的變形例,例示數個。於以下的變形例的說明,對於具有和在上述的實施方式所說明者同樣的構成及功能的部分,當作可使用和上述的實施方式同樣的符號。並且,關於該部分的說明,在技術上不矛盾的範圍內,當作可酌情援用上述的實施方式中的說明。此外,上述的實施方式的一部分及複數個變形例的全部或一部分,在技術上不矛盾的範圍內,可酌情複合地應用。<Variations> Several representative variations of the embodiments are illustrated below. In the descriptions of the following variations, parts having the same structure and function as those described in the above embodiments shall be treated with the same symbols as those used in the above embodiments. Furthermore, the descriptions of such parts shall be deemed to be derived from the descriptions in the above embodiments, to the extent that they do not contradict each other technically. In addition, a portion of the above embodiments and all or part of the variations may be applied in combination, to the extent that they do not contradict each other technically.

亦可變更透鏡部443中的反射鏡、透鏡的配置。此外,亦可變更相機的配置。再者,亦可變更照明裝置的配置。關於此等,以下進行說明。The arrangement of the reflector and lens in the lens section 443 can also be changed. Furthermore, the arrangement of the camera can also be changed. Moreover, the arrangement of the lighting device can also be changed. These will be explained below.

(第一變形例)   針對第一變形例中的光學系統使用圖12進行說明。圖12為針對第一變形例中的接合部的光學系統的配置進行繪示的圖。(First Variation) The optical system in the first variation will be explained using FIG12. FIG12 is a diagram illustrating the configuration of the optical system at the joint in the first variation.

在第一變形例,反射鏡443d設於第一透鏡443a的Z1側。另外,第一透鏡443a、第二透鏡443b及半反射鏡443c的配置,和實施方式為同樣。第一相機441設於反射鏡443d的X1側。第二相機442設於第二透鏡443b的X1側。半反射鏡443c,和實施方式同樣地,使從Z2側入射於Z1側的光,分歧為往Z1側的透射光與往X1側的反射光。反射鏡443d,將來自半反射鏡443c的透射光予以反射至X1側。In the first variation, the reflector 443d is disposed on the Z1 side of the first lens 443a. Furthermore, the arrangement of the first lens 443a, the second lens 443b, and the semi-reflective mirror 443c is the same as in the embodiment. The first camera 441 is disposed on the X1 side of the reflector 443d. The second camera 442 is disposed on the X1 side of the second lens 443b. The semi-reflective mirror 443c, as in the embodiment, splits light incident from the Z2 side onto the Z1 side into transmitted light towards the Z1 side and reflected light towards the X1 side. The reflector 443d reflects the transmitted light from the semi-reflective mirror 443c to the X1 side.

(第二變形例)   針對第二變形例中的光學系統使用圖13進行說明。圖13為針對第二變形例中的接合部的光學系統的配置進行繪示的圖。(Second Variation) The optical system in the second variation will be explained using FIG13. FIG13 is a diagram illustrating the configuration of the optical system at the joint in the second variation.

在第二變形例,未設置反射鏡443d。另外,第一透鏡443a、第二透鏡443b及半反射鏡443c的配置,和實施方式為同樣。第一相機441設於第一透鏡443a的Z1側。第二相機442設於第二透鏡443b的X1側。半反射鏡443c,和實施方式同樣地,使從Z2側入射於Z1側的光,分歧為往Z1側的透射光與往X1側的反射光。In the second variation, mirror 443d is not provided. The arrangement of the first lens 443a, the second lens 443b, and the semi-reflective mirror 443c is the same as in the embodiment. A first camera 441 is located on the Z1 side of the first lens 443a. A second camera 442 is located on the X1 side of the second lens 443b. The semi-reflective mirror 443c, as in the embodiment, splits light incident from the Z2 side onto the Z1 side into transmitted light towards the Z1 side and reflected light towards the X1 side.

(第三變形例)   針對第三變形例中的光學系統使用圖14進行說明。圖14為針對第三變形例中的接合部的光學系統的配置進行繪示的圖。(Third Variation) The optical system in the third variation will be explained using FIG14. FIG14 is a diagram illustrating the configuration of the optical system at the joint in the third variation.

在第三變形例,第二透鏡443b設於第二相機442與反射鏡443d之間。其他的配置,和實施方式為同樣。In the third variation, the second lens 443b is disposed between the second camera 442 and the reflector 443d. Other configurations and embodiments are the same.

(第四變形例)   針對第四變形例中的光學系統使用圖15進行說明。圖15為針對第四變形例中的接合部的光學系統的配置進行繪示的圖。(Fourth Variation) The optical system in the fourth variation will be explained using FIG15. FIG15 is a diagram illustrating the configuration of the optical system at the joint in the fourth variation.

在第四變形例,照明裝置47被插入於第二變形例中的透鏡部443之中。照明裝置47,為一插入型的同軸照明,其中,該插入型的同軸照明,為具有光源471以及具有設於半反射鏡443c與第二透鏡443b之間的半反射鏡472者。光源471可為平行光亦可為擴散光。In the fourth variation, the illumination device 47 is inserted into the lens portion 443 in the second variation. The illumination device 47 is an insert-type coaxial illumination, wherein the insert-type coaxial illumination has a light source 471 and a semi-reflective mirror 472 disposed between the semi-reflective mirror 443c and the second lens 443b. The light source 471 can be parallel light or diffused light.

(第五變形例)   針對第五變形例中的光學系統使用圖16進行說明。圖16為針對第五變形例中的接合部的光學系統的配置進行繪示的圖。(Fifth Variation) The optical system in the fifth variation will be explained using FIG16. FIG16 is a diagram illustrating the configuration of the optical system at the joint in the fifth variation.

在第五變形例,照明裝置47被插入於第二變形例中的透鏡部443之中。照明裝置47,為一插入型的同軸照明,其中,該插入型的同軸照明,為具有光源471以及具有設於半反射鏡443c與第一透鏡443a之間的半反射鏡472者。光源471可為平行光亦可為擴散光。In the fifth variation, the illumination device 47 is inserted into the lens portion 443 in the second variation. The illumination device 47 is an insert-type coaxial illumination, wherein the insert-type coaxial illumination has a light source 471 and a semi-reflective mirror 472 disposed between the semi-reflective mirror 443c and the first lens 443a. The light source 471 can be parallel light or diffused light.

以上,雖根據實施方式以及變形例具體地說明了由本揭示者所為的揭露,惟本揭示,不限定於上述實施方式及變形例,可作各種變更不言而喻。The above describes the disclosure made by the discloser in detail according to the implementation method and variations. However, this disclosure is not limited to the above implementation method and variations, and various changes are self-evident.

亦可使用具有可針對引線前緣精確地進行檢測的NA的透鏡。據此,即使使用平行光或接近平行光的同軸照明裝置仍使得亦可對引線側面照射照明光。Alternatively, a lens with a magnetic field (NA) capable of precisely detecting the leading edge of the lead can be used. Accordingly, even when using a coaxial illumination device with parallel or near-parallel light, illumination light can still be shone onto the side of the lead.

在實施方式,雖說明了使用晶粒貼附膜之例,惟設置在基板塗布黏合劑的預成型部而不使用晶粒貼附膜亦可。預成型部具備將膏狀接著劑進行塗布的預成型頭與將預成型頭驅動於上下方向及水平方向的預成型台。While an example of using a die-attach film has been described in the embodiment, it is also possible to install a preforming section for coating adhesive on a substrate without using a die-attach film. The preforming section includes a preforming head for coating a paste-like adhesive and a preforming table for driving the preforming head in the vertical and horizontal directions.

在實施方式,說明了有關以下的固晶裝置:從晶圓供應部將晶粒以拾取頭進行拾取而載置於中間台,將載置於中間台的晶粒以接合頭接合於基板。然而,不限定於此,亦可應用於從晶圓供應部以接合頭拾取晶粒並接合於基板的固晶裝置。In the embodiment, a die bonding device is described as follows: a die is picked up from a wafer supply section by a pick-up head and placed on an intermediate stage, and the die placed on the intermediate stage is bonded to a substrate by a bonding head. However, it is not limited to this, and a die bonding device that picks up a die from a wafer supply section by a bonding head and bonds it to a substrate can also be applied.

例如,亦可應用於無中間台與拾取頭而將晶圓供應部的晶粒以接合頭接合於基板的固晶裝置。For example, it can also be applied to die bonding devices that bond the wafer supply die to the substrate with a bonding head without an intermediate stage or pick-up head.

此外,亦可應用於以下的倒裝晶片接合器:無中間載台,從晶圓供應部拾取晶粒,將翻轉式拾取頭進行上下反轉而將晶粒交接給接合頭,以接合頭接合於基板。In addition, it can also be applied to the following flip chip bonders: without an intermediate stage, picking up the die from the wafer supply section, flipping the pick-up head up and down to transfer the die to the bonding head, and bonding the die to the substrate.

在實施方式,雖以固晶裝置為例進行了說明,惟亦可應用於將工件進行吸附而拾取並將所拾取的工件載置於基板等的實裝裝置。While the implementation method is explained using a die bonding device as an example, it can also be applied to an actual device that adsorbs and picks up a workpiece and places the picked-up workpiece on a substrate or the like.

1:固晶裝置(半導體製造裝置) 44:基板辨識相機(攝像裝置) 441:第一相機 442:第二相機 443:透鏡部 443a:第一透鏡 443b:第二透鏡 443c:半反射鏡(分束器) 45:照明裝置1: Die bonding device (semiconductor manufacturing device) 44: Substrate recognition camera (camera device) 441: First camera 442: Second camera 443: Lens section 443a: First lens 443b: Second lens 443c: Semi-reflective mirror (beam splitter) 45: Illumination device

[圖1]圖1為針對實施方式中的固晶裝置的構成例進行繪示的示意俯視圖。   [圖2]圖2為針對圖1中從箭頭A方向觀看時的示意構成進行說明的圖。   [圖3]圖3為針對示於圖1的固晶裝置的控制系統的示意構成進行繪示的方塊圖。   [圖4]圖4為針對使用示於圖1的固晶裝置的情況下的半導體裝置的製造方法進行繪示的流程圖。   [圖5]圖5為針對接合部的光學系統的一例進行繪示的圖。   [圖6]圖6為針對設於基板的位置辨識標記及接合中心進行繪示的圖。   [圖7]圖7為針對具有引線的基板的剖面進行繪示的圖。   [圖8]圖8為針對示於圖7的引線與照明裝置的關係進行繪示的圖。   [圖9]圖9為針對實施方式中的照明裝置進行說明的圖。   [圖10]圖10為針對教導動作進行說明的圖。   [圖11]圖11為針對生產動作進行說明的圖。   [圖12]圖12為針對第一變形例中的接合部的光學系統的配置進行繪示的圖。   [圖13]圖13為針對第二變形例中的接合部的光學系統的配置進行繪示的圖。   [圖14]圖14為針對第三變形例中的接合部的光學系統的配置進行繪示的圖。   [圖15]圖15為針對第四變形例中的接合部的光學系統的配置進行繪示的圖。   [圖16]圖16為針對第五變形例中的接合部的光學系統的配置進行繪示的圖。[Figure 1] Figure 1 is a schematic top view illustrating an example of the configuration of the die bonding apparatus in the embodiment. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration when viewed from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a block diagram illustrating the schematic configuration of the control system of the die bonding apparatus shown in Figure 1. [Figure 4] Figure 4 is a flowchart illustrating a method for manufacturing a semiconductor device using the die bonding apparatus shown in Figure 1. [Figure 5] Figure 5 is a diagram illustrating an example of the optical system of the bonding portion. [Figure 6] Figure 6 is a diagram illustrating the position identification mark and bonding center provided on the substrate. [Figure 7] Figure 7 is a diagram illustrating a cross-section of a substrate with leads. [Figure 8] Figure 8 is a diagram illustrating the relationship between the lead wire and the lighting device shown in Figure 7. [Figure 9] Figure 9 is a diagram illustrating the lighting device in the embodiment. [Figure 10] Figure 10 is a diagram illustrating the teaching operation. [Figure 11] Figure 11 is a diagram illustrating the production operation. [Figure 12] Figure 12 is a diagram illustrating the configuration of the optical system of the joint in the first variation. [Figure 13] Figure 13 is a diagram illustrating the configuration of the optical system of the joint in the second variation. [Figure 14] Figure 14 is a diagram illustrating the configuration of the optical system of the joint in the third variation. [Figure 15] Figure 15 is a diagram illustrating the configuration of the optical system of the joint in the fourth variation. [Fig. 16] Fig. 16 is a diagram illustrating the configuration of the optical system at the joint in the fifth variation.

44:基板辨識相機(攝像裝置) 44: Substrate Identification Camera (Video Camera)

45:照明裝置 45: Lighting Devices

441:第一相機 441: The First Camera

442:第二相機 442: Second Camera

443:透鏡部 443: Lens section

443a:第一透鏡 443a: First Lens

443b:第二透鏡 443b: Second Lens

443c:半反射鏡(分束器) 443c: Partial Reflector (Beam Splitter)

443d:反射鏡 443d: Mirror

451:發光照明 451: Luminous Illumination

452:半反射鏡 452: Semi-reflective mirror

OA,OA1,OA2:光軸 OA, OA1, OA2: Optical axis

P:各封裝區域 P: Each packaging area Packaging areas

S:基板 S:Substrate

Claims (8)

一種半導體製造裝置,   具備:   攝像裝置,其具有對具有被載置晶粒的凸出(tabe)區域與基準標記的基板進行攝影的第一相機,具有對前述基準標記進行攝影的第二相機,以及具有透鏡部;以及   同軸照明裝置;   前述透鏡部,具有:    第一透鏡,其作用為前述第一相機的接物鏡;    第二透鏡,其作用為前述第二相機的接物鏡;以及    分束器,其將來自拍攝對象的反射光分歧至前述第一透鏡與前述第二透鏡。A semiconductor manufacturing apparatus includes: an imaging device having a first camera for photographing a substrate having a tab area with mounted chips and a reference mark, a second camera for photographing the reference mark, and a lens portion; and a coaxial illumination device; the lens portion having: a first lens that functions as an objective lens for the first camera; a second lens that functions as an objective lens for the second camera; and a beam splitter that splits reflected light from a photographed object to the first lens and the second lens. 如請求項1的半導體製造裝置,其中,   前述分束器被配置為將來自前述拍攝對象的前述反射光分歧為鉛直朝上的透射光與水平方向的反射光,   前述同軸照明裝置,設於比前述透鏡部靠前述基板側。As in the semiconductor manufacturing apparatus of claim 1, wherein, the aforementioned beam splitter is configured to split the aforementioned reflected light from the aforementioned photographed object into vertically upward transmitted light and horizontally reflected light, and the aforementioned coaxial illumination device is provided on the side of the substrate closer to the aforementioned lens portion. 如請求項1的半導體製造裝置,其中,   前述分束器被配置為將來自前述拍攝對象的前述反射光分歧為鉛直朝上的透射光與水平方向的反射光,   前述同軸照明裝置被插入而設於前述透鏡部。As in the semiconductor manufacturing apparatus of claim 1, wherein the aforementioned beam splitter is configured to split the aforementioned reflected light from the aforementioned photographed object into vertically upward transmitted light and horizontally reflected light, and the aforementioned coaxial illumination device is inserted and disposed in the aforementioned lens portion. 如請求項1的半導體製造裝置,其中,   前述同軸照明裝置具有面發光光源。As in the semiconductor manufacturing apparatus of claim 1, the aforementioned coaxial illumination device has a surface-emitting light source. 如請求項1的半導體製造裝置,其中,   更具備設於比前述同軸照明裝置靠前述基板側的半球型照明裝置。The semiconductor manufacturing apparatus of claim 1 further includes a hemispherical lighting device disposed on the substrate side of the coaxial lighting device. 如請求項1的半導體製造裝置,其中,   前述基準標記以引線而構成。As in the semiconductor manufacturing apparatus of claim 1, wherein the aforementioned reference mark is formed by leads. 如請求項1的半導體製造裝置,其中,   具備一控制部,其中,該控制部,為被構成為根據以前述第一相機對前述基板進行攝影而取得的影像,以及根據以前述第二相機對前述基準標記進行攝影而取得的影像,進行前述基板的定位者。The semiconductor manufacturing apparatus of claim 1 includes a control unit configured to position the substrate based on an image obtained by photographing the substrate with the first camera and an image obtained by photographing the reference mark with the second camera. 一種半導體裝置之製造方法,   包含:   利用一半導體製造裝置的攝像裝置,對基板進行攝影的程序,其中,該半導體製造裝置,為具備前述攝像裝置以及同軸照明裝置者,其中,前述攝像裝置,為具有對具有被載置晶粒的凸出(tabe)區域與基準標記的基板進行攝影的第一相機,具有對前述基準標記進行攝影的第二相機,以及具有透鏡部者;前述透鏡部,具有作用為前述第一相機的接物鏡的第一透鏡,具有作用為前述第二相機的接物鏡的第二透鏡,以及具有將來自拍攝對象的反射光分歧至前述第一透鏡與前述第二透鏡的分束器;以及   根據以前述第一相機對前述基板進行攝影而取得的影像,以及根據以前述第二相機對前述基準標記進行攝影而取得的影像,進行前述基板的定位的程序。A method for manufacturing a semiconductor device includes: a process of photographing a substrate using an imaging device of a semiconductor manufacturing apparatus, wherein the semiconductor manufacturing apparatus is equipped with the aforementioned imaging device and a coaxial illumination device, wherein the aforementioned imaging device comprises a first camera for photographing a substrate having a tab area with mounted chips and a reference mark, a second camera for photographing the aforementioned reference mark, and a lens portion; the aforementioned lens portion comprises a first lens acting as an objective lens for the aforementioned first camera, a second lens acting as an objective lens for the aforementioned second camera, and a beam splitter for splitting reflected light from the subject to the aforementioned first lens and the aforementioned second lens; and A procedure for positioning the substrate based on images obtained by photographing the substrate with the first camera and images obtained by photographing the reference mark with the second camera.
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