TWI904613B - Optical inspection method and optical inspection system - Google Patents
Optical inspection method and optical inspection systemInfo
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Abstract
Description
本揭露是有關於一種光學檢測方法與光學檢測系統,特別是有關於一種檢測光學補償膜的光學檢測方法與光學檢測系統。This disclosure relates to an optical detection method and an optical detection system, and more particularly to an optical detection method and optical detection system for detecting optical compensation films.
位相差膜(retardation film)普遍應用於電視、電腦或智慧型手機等電子裝置的顯示模組中,以控制光線的偏振狀態並提高影像品質。其中,位相差膜所具有的位相差值的均勻度是高品質顯示的重要因素。然而,目前用以檢測其光學性質如位相差值的系統所能達到的檢測範圍相當有限,導致檢測耗時,不利於在產線上進行實時檢測。Retardation films are widely used in display modules of electronic devices such as televisions, computers, and smartphones to control the polarization of light and improve image quality. The uniformity of the phase difference value possessed by the retardation film is a crucial factor for high-quality display. However, current systems for detecting its optical properties, such as phase difference value, have a limited detection range, resulting in time-consuming detection processes and hindering real-time inspection on production lines.
因此,如何提出一種可解決上述問題的光學檢測方法與光學檢測系統,是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to propose an optical detection method and optical detection system that can solve the above problems is one of the problems that the industry is currently eager to invest research and development resources to solve.
有鑑於此,本揭露的一目的在於提出一種可有解決上述問題的光學檢測方法與光學檢測系統。In view of this, one purpose of this disclosure is to provide an optical detection method and optical detection system that can solve the above problems.
本揭露的一方面是有關於一種光學檢測方法包括設置發光單元陣列與光學膜片組於發光單元陣列上方。光學膜片組包括擴散片、下偏振片、標準片以及上偏振片。擴散片、下偏振片、標準片以及上偏振片沿著發光單元陣列的出光方向依序堆疊。下偏振片與上偏振片分別具有吸收軸。下偏振片的吸收軸與上偏振片的吸收軸實質上相互平行。方法還包括設置待測膜片於標準片與上偏振片之間。待測膜片具有慢軸。慢軸與下偏振片、上偏振片的吸收軸之間具有實質上45度的夾角。方法還包括驅使發光單元陣列發射光線通過光學膜片組。方法還包括驅使影像感測器接收通過光學膜片組的光線並獲取影像。方法還包括驅使處理器基於影像獲取光線的多個強度值。處理器訊號連接於影像感測器。影像具有多個像素對應於強度值。方法還包括驅使處理器基於強度值獲取關聯於待測膜片的多個位相差值。One aspect of this disclosure relates to an optical detection method comprising placing an array of light-emitting units and an optical film assembly above the array of light-emitting units. The optical film assembly includes a diffuser, a lower polarizer, a standard plate, and an upper polarizer. The diffuser, lower polarizer, standard plate, and upper polarizer are stacked sequentially along the light emission direction of the array of light-emitting units. The lower polarizer and the upper polarizer each have an absorption axis. The absorption axis of the lower polarizer and the absorption axis of the upper polarizer are substantially parallel to each other. The method further includes placing a film to be tested between the standard plate and the upper polarizer. The film to be tested has a slow axis. The slow axis forms a substantially 45-degree angle with the absorption axes of the lower and upper polarizers. The method further includes driving light emitted from the array of light-emitting units through the optical film assembly. The method further includes driving an image sensor to receive light passing through an optical film assembly and acquiring an image. The method also includes driving a processor to acquire multiple intensity values of the light based on the image. The processor is signal-connected to the image sensor. The image has multiple pixels corresponding to the intensity values. The method further includes driving the processor to acquire multiple phase difference values related to the film under test based on the intensity values.
本揭露的另一方面是有關於一種光學檢測系統包括發光單元陣列、光學膜片組、影像感測器以及處理器。發光單元陣列配置以發射光線。光學膜片組位於發光單元陣列上方。光學膜片組包括擴散片、下偏振片、標準片以及上偏振片。擴散片、下偏振片、標準片以及上偏振片沿著發光單元陣列的出光方向依序堆疊。下偏振片與上偏振片分別具有吸收軸。下偏振片的吸收軸與上偏振片的吸收軸實質上相互平行。影像感測器配置以接收通過光學膜片組的光線並獲取影像。處理器訊號連接於影像感測器。處理器配置以基於影像獲取多個位相差值。影像具有多個像素對應於位相差值。Another aspect of this disclosure relates to an optical detection system comprising an array of light-emitting units, an optical film assembly, an image sensor, and a processor. The light-emitting unit array is configured to emit light. The optical film assembly is located above the light-emitting unit array. The optical film assembly includes a diffuser, a lower polarizer, a standard polarizer, and an upper polarizer. The diffuser, lower polarizer, standard polarizer, and upper polarizer are stacked sequentially along the light emission direction of the light-emitting unit array. The lower polarizer and the upper polarizer each have an absorption axis. The absorption axis of the lower polarizer and the absorption axis of the upper polarizer are substantially parallel to each other. The image sensor is configured to receive the light passing through the optical film assembly and acquire an image. The processor is signal-connected to the image sensor. The processor is configured to acquire multiple phase difference values based on the image. The image has multiple pixels corresponding to phase difference values.
綜上所述,於本揭露的一些實施方式的光學檢測方法與光學檢測系統中,使用發光單元陣列發射光線通過光學膜片組與待測膜片,並使用影像感測器獲取影像,可以一次獲得大面積的待測膜片的二維位相差資訊,節省檢測掃描的時間,且便於通過處理器預設的演算法快速分析位相差的均勻程度,因此可以在產線上進行實時檢測,隨時調整製程。此外,通過光學鏡組可以調整檢測的解析度,以利於改善膜面斑紋缺陷(mura)。In summary, in the optical inspection methods and systems disclosed herein, light emitted from an array of emitting units passes through an optical film assembly and the film under test, and an image sensor acquires the image. This allows for the simultaneous acquisition of two-dimensional phase difference information over a large area of the film under test, saving inspection and scanning time. Furthermore, the uniformity of the phase difference can be quickly analyzed using algorithms preset in the processor. Therefore, real-time inspection can be performed on the production line, allowing for continuous process adjustments. Additionally, the resolution of the inspection can be adjusted using an optical mirror assembly to improve the appearance of surface mura defects.
本揭露的這些與其他方面通過結合圖式對優選實施例進行以下的描述,本揭露的實施例將變得顯而易見,但在不脫離本揭露的新穎概念的精神和範圍的情況下,可以進行其中的變化和修改。The preferred embodiments of this disclosure will become apparent from the following description of these and other aspects in conjunction with the diagrams, but variations and modifications may be made therein without departing from the spirit and scope of the novel concepts of this disclosure.
以下揭露內容在此將透過圖式及參考資料被更完整描述,一些示例性的實施例被繪示在圖式中。本揭露可以被以不同形式實施並且不應被以下提及的實施例所限制。但是,這些實施例被提供以幫助更完整的理解本揭露的內容並且向本領域的技術人員充分傳達本揭露的範圍。The following disclosure will be described more fully with reference to the accompanying drawings, some of which are exemplary embodiments. This disclosure may be implemented in various forms and should not be limited to the embodiments mentioned below. However, these embodiments are provided to aid in a more complete understanding of the contents of this disclosure and to fully convey the scope of this disclosure to those skilled in the art.
在圖式中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的參考標號會貫穿全文指代相似元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本揭露所使用的,「連接」可以指物理及/或電性連接。In the figures, the thicknesses of layers, films, panels, areas, etc., are enlarged for clarity. Throughout the specification, the same reference numerals refer to similar components. It should be understood that when a component such as a layer, film, area, or substrate is referred to as being "on" or "connected to" another component, it may be directly on or connected to the other component, or intermediate components may also be present. Conversely, when a component is referred to as being "directly on" or "directly connected to" another component, no intermediate components are present. As used in this disclosure, "connection" can refer to physical and/or electrical connections.
這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本揭露所使用的,除非內容清楚地指示,否則單數形式「一」、「一個」和「該」旨在包括複數形式,包括「至少一個」。「或」表示「及/或」。如本揭露所使用的,術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語「包括」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not restrictive. As used in this disclosure, unless the content clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms, including “at least one.” “Or” means “and/or.” As used in this disclosure, the term “and/or” includes any and all combinations of one or more of the associated listed items. It should also be understood that, when used in this specification, the terms “comprising” and/or “including” specify the presence of the stated features, regions, integrals, steps, operations, elements, and/or components, but do not exclude the presence or addition of one or more other features, regions, integrals, steps, operations, elements, components, and/or combinations thereof.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本揭露中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個圖式中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於圖式的特定取向。類似地,如果一個圖式中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下面」或「下面」可以包括上方和下方的取向。Furthermore, relative terms such as "below" or "bottom" and "above" or "top" are used in this disclosure to describe the relationship between one element and another, as illustrated in the figures. It should be understood that relative terms are intended to include different orientations of the device beyond those shown in the figures. For example, if a device in a figure is flipped, an element described as being "below" of other elements will be oriented "above" of other elements. Thus, the exemplary term "below" can include both "below" and "above" orientations, depending on the specific orientation of the figure. Similarly, if a device in a figure is flipped, an element described as being "below" or "below" of other elements will be oriented "above" of other elements. Thus, the exemplary term "below" or "below" can include both "above" and "below" orientations.
本揭露使用的「約」、「近似」、或「實質上」包括所述值和在本領域的技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本揭露使用的「約」、「近似」或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used in this disclosure, "about," "approximately," or "substantially" includes the value and the average of the values within an acceptable range of deviation from a particular value as determined by a person skilled in the art, taking into account the measurement under discussion and a specific number of errors associated with the measurement (i.e., limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used in this disclosure, "about," "approximately," or "substantially" may be used to select a more acceptable range of deviations or standard deviations depending on the optical, etchable, or other properties, rather than applying a single standard deviation to all properties.
除非另有定義,本揭露使用的所有術語(包括技術和科學術語)具有與本領域的技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本揭露的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本揭露中明確地這樣定義。Unless otherwise defined, all terms used in this disclosure (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this disclosure, and will not be interpreted as having an idealized or overly formal meaning unless expressly defined in this disclosure.
請參照第1圖,其為根據本揭露的一些實施方式的光學檢測系統10的示意圖。如第1圖中所示,光學檢測系統10包括發光單元陣列110、光學膜片組130、影像感測器160以及處理器170。發光單元陣列110配置以沿著方向D1發射光線,如第1圖中的箭頭所示。在一些實施方式中,發光單元陣列110可以為呈陣列排列的發光二極體(light-emitting diode, LED)或次毫米發光二極體(mini LED)。舉例來說,如第1圖中所示,發光單元陣列110包括週期性排列的子畫素單元R、子畫素單元G以及子畫素單元B,這些子畫素單元R、子畫素單元G以及子畫素單元B可為發射相同或相異波長光之發光單元。在一些實施方式中,如第1圖中所示,光學檢測系統10還包括控制器120。控制器120訊號連接於發光單元陣列110並配置以控制發光單元陣列110的發光強度。Please refer to Figure 1, which is a schematic diagram of an optical detection system 10 according to some embodiments of the present disclosure. As shown in Figure 1, the optical detection system 10 includes an array of light-emitting units 110, an optical film assembly 130, an image sensor 160, and a processor 170. The array of light-emitting units 110 is configured to emit light along direction D1, as indicated by the arrow in Figure 1. In some embodiments, the array of light-emitting units 110 may be an array of light-emitting diodes (LEDs) or mini LEDs. For example, as shown in Figure 1, the light-emitting unit array 110 includes periodically arranged sub-pixel units R, G, and B, which can be light-emitting units emitting light of the same or different wavelengths. In some embodiments, as shown in Figure 1, the optical detection system 10 also includes a controller 120. The controller 120 is signal-connected to the light-emitting unit array 110 and configured to control the light emission intensity of the light-emitting unit array 110.
如第1圖中所示,光學膜片組130位於發光單元陣列110上方。光學膜片組130包括擴散片131、下偏振片132、標準片133以及上偏振片134。擴散片131、下偏振片132、標準片133以及上偏振片134沿著發光單元陣列110的出光方向D1依序堆疊。換言之,擴散片131位於發光單元陣列110上方。下偏振片132位於擴散片131上方。標準片133位於下偏振片132上方。上偏振片134位於標準片133上方。As shown in Figure 1, the optical film assembly 130 is located above the light-emitting unit array 110. The optical film assembly 130 includes a diffuser 131, a lower polarizer 132, a standard polarizer 133, and an upper polarizer 134. The diffuser 131, lower polarizer 132, standard polarizer 133, and upper polarizer 134 are stacked sequentially along the light emission direction D1 of the light-emitting unit array 110. In other words, the diffuser 131 is located above the light-emitting unit array 110. The lower polarizer 132 is located above the diffuser 131. The standard polarizer 133 is located above the lower polarizer 132. The upper polarizer 134 is located above the standard polarizer 133.
擴散片131配置以提升發光單元陣列110的出光均勻度。下偏振片132配置以將發光單元陣列110均勻化後的非偏振光源轉為平行線偏振光。在一些實施方式中,下偏振片132與上偏振片134的吸收軸(absorption axis)為實質上相互平行,以吸收平行於吸收軸方向之偏振光。標準片133配置以改變平行線偏振光的偏振方向。A diffuser 131 is configured to improve the light emission uniformity of the light-emitting unit array 110. A lower polarizer 132 is configured to convert the homogenized unpolarized light source from the light-emitting unit array 110 into parallel linearly polarized light. In some embodiments, the absorption axes of the lower polarizer 132 and the upper polarizer 134 are substantially parallel to each other to absorb polarized light parallel to the absorption axis direction. A standard plate 133 is configured to change the polarization direction of the parallel linearly polarized light.
如第1圖中所示,影像感測器160配置以接收通過光學膜片組130的光線並獲取影像。在一些實施方式中,影像感測器160可以包括線性影像感測器或其他感光元件。舉例來說,影像感測器160為工業用相機。As shown in Figure 1, image sensor 160 is configured to receive light passing through optical film assembly 130 and acquire an image. In some embodiments, image sensor 160 may include a linear image sensor or other photosensitive element. For example, image sensor 160 is an industrial camera.
如第1圖中所示,處理器170訊號連接於影像感測器160。在一些實施方式中,處理器170包括中央處理單元(central processing unit, CPU)、微處理器、控制器、微控制器或類似的處理部件。舉例來說,處理器170為電腦,並配置以獲取影像各波長的256級灰階值進行分析。As shown in Figure 1, processor 170 is signal-connected to image sensor 160. In some embodiments, processor 170 includes a central processing unit (CPU), microprocessor, controller, microcontroller, or similar processing unit. For example, processor 170 is a computer configured to acquire 256 grayscale values for each wavelength of the image for analysis.
在一些實施方式中,光學檢測系統10配置以分析光學膜片的位相差的二維分布狀況。進一步來說,待測膜片S可以為光學補償膜(compensator)。在檢測過程中,待測膜片S設置於標準片133與上偏振片134之間,且待測膜片S具有一慢軸,該慢軸與下偏振片132、上偏振片134之吸收軸間具有實質上45度的一夾角。In some embodiments, the optical detection system 10 is configured to analyze the two-dimensional distribution of the phase difference of the optical film. Further, the film under test (S) can be an optical compensation film. During the detection process, the film under test (S) is positioned between the standard plate 133 and the upper polarizer 134, and the film under test (S) has a slow axis that forms a substantially 45-degree angle with the absorption axes of the lower polarizer 132 and the upper polarizer 134.
根據待測膜片S的位相差值的大致範圍,光學檢測系統10包括的標準片133採用不同的位相差波片及慢軸方向。在一些實施方式中,將待測膜片S可能的位相差值範圍分為三個區間,分別為近似於待分析波長的四分之一、二分之一以及四分之三的區間,而其對應採用的標準片133則分別為慢軸方向與待測膜片S之慢軸方向實質上平行之四分之一波片(quarter-wave plate, QWP)、零位相差波片(zero-wave plate)以及慢軸方向與待測膜片S之慢軸方向實質上垂直之四分之一波片。相應地,光學檢測系統10的各元件可能具有不同的參數設定,將於後續段落中詳述。Depending on the approximate range of the phase difference value of the diaphragm S under test, the standard plate 133 included in the optical detection system 10 employs different phase difference waveplates and slow axis directions. In some embodiments, the possible range of phase difference values of the diaphragm S under test is divided into three regions, approximately one-quarter, one-half, and three-quarters of the wavelength to be analyzed. The corresponding standard plates 133 are a quarter-wave plate (QWP) with its slow axis direction substantially parallel to the slow axis direction of the diaphragm S under test, a zero-wave plate, and a quarter-wave plate with its slow axis direction substantially perpendicular to the slow axis direction of the diaphragm S under test. Accordingly, the components of the optical detection system 10 may have different parameter settings, which will be described in detail in later paragraphs.
當待測膜片S可能的位相差值範圍近似於待分析波長的四分之一時,標準片133包括四分之一波片。在一些實施方式中,位相差值範圍預設為在0與 + 之間。 為待分析的波長。 為標準片133已知的位相差值(或稱參考位相差值)。舉例來說,選定待分析波長 為550奈米,所採用的標準片133參考位相差值 為142奈米,則當待測膜片S的可能位相差值落在0奈米與200奈米之間時,採用四分之一波片作為標準片133。 When the possible phase difference range of the diaphragm S under test is approximately one-quarter of the wavelength to be analyzed, the standard plate 133 includes a quarter-wave plate. In some embodiments, the phase difference range is preset to be between 0 and... + Between. The wavelength to be analyzed. This is the known phase difference value (or reference phase difference value) for standard film 133. For example, the wavelength to be analyzed is selected. The standard wafer used is 133 reference phase difference value, which is 550 nanometers. If the phase difference is 142 nanometers, then when the possible phase difference of the membrane under test S falls between 0 nanometers and 200 nanometers, a quarter-wave plate is used as the standard plate 133.
在這個實施例中,標準片133的慢軸與下偏振片132的吸收軸、上偏振片134的吸收軸之間具有實質上+45度的夾角,並與待測膜片S之慢軸方向實質上平行。進一步來說,標準片133的慢軸亦為實質上+45度。如此一來,發光單元陣列110的光線依序經過擴散片131與下偏振片132並轉為實質上垂直於下偏振片132吸收軸之線偏振光後,再經過標準片133轉為圓偏振光。接著圓偏振光經過待測膜片S。由於待測膜片S的位相差值近似於待分析波長的四分之一,因此圓偏振光經過待測膜片S後會轉為平行於上偏振片134吸收軸之線偏振光,接著經過上偏振片134吸收平行於吸收軸方向之線偏振光後,所留下的由影像感測器160接收到的光線即可作為判斷待測膜片S與標準片133之間位相差的依據。接著,影像感測器160接收光線並獲取影像傳輸至處理器170中,處理器170再基於影像中多個像素的資訊獲取位相差值。In this embodiment, the slow axis of the standard plate 133 forms a substantial angle of +45 degrees with the absorption axis of the lower polarizer 132 and the absorption axis of the upper polarizer 134, and is substantially parallel to the slow axis of the film under test S. Furthermore, the slow axis of the standard plate 133 is also substantially +45 degrees. Thus, the light from the emitting unit array 110 sequentially passes through the diffuser 131 and the lower polarizer 132, becoming linearly polarized light substantially perpendicular to the absorption axis of the lower polarizer 132, and then passes through the standard plate 133, becoming circularly polarized light. The circularly polarized light then passes through the film under test S. Since the phase difference of the test film S is approximately one-quarter of the wavelength to be analyzed, circularly polarized light will be converted into linearly polarized light parallel to the absorption axis of the upper polarizer 134 after passing through the test film S. The light remaining after the upper polarizer 134 absorbs the linearly polarized light parallel to the absorption axis can be used as the basis for determining the phase difference between the test film S and the standard film 133. Next, the image sensor 160 receives the light and acquires an image, which is then transmitted to the processor 170. The processor 170 then obtains the phase difference value based on information from multiple pixels in the image.
進一步來說,這些像素分別包括影像感測器160的像素單元P所接收到的光線的256級灰階值,代表其所接收到的光線強度。通過瓊斯矩陣(Jones matrix)修正可以獲得針對此位相差值區間的光線強度與位相差值之間的關係式。在一些實施方式中,關係式定義為 。 為待測膜片S於影像像素對應處所具有的位相差值。 為前述的像素的光線強度值。 為關聯於此區間的強度校正常數, 為關聯於此區間的系統相位平移校正常數。 與 根據檢測環境校正而得,將於後續段落中詳述。 Furthermore, these pixels include 256 gray levels of the light received by pixel unit P of image sensor 160, representing the intensity of the received light. A relationship between the light intensity and the phase difference for this phase difference range can be obtained through Jones matrix correction. In some embodiments, the relationship is defined as follows: . The phase difference value is the value of the film under test S at the corresponding pixel in the image. The light intensity value of the aforementioned pixel. To calibrate the constants of the intensity related to this interval, The phase shift calibration constants for systems related to this region are used. and This is based on calibration for the testing environment, which will be detailed in later paragraphs.
當待測膜片S可能的位相差值範圍近似於待分析波長的二分之一時,標準片133包括零位相差波片。在一些實施方式中,位相差值範圍預設為在 + 與 之間。舉例來說,選定待分析波長 為550奈米,當待測膜片S的可能位相差值落在201奈米與275奈米之間時,所採用的標準片133為參考位相差值 為0奈米之零位相差波片。 When the possible phase difference range of the diaphragm S under test is approximately half of the wavelength to be analyzed, the standard plate 133 includes a zero-phase-difference waveplate. In some embodiments, the phase difference range is preset to be within... + and In between. For example, selecting the wavelength to be analyzed. The phase difference is 550 nm. When the possible phase difference value of the test film S falls between 201 nm and 275 nm, the standard film 133 used is the reference phase difference value. It is a zero-phase waveplate with a diameter of 0 nanometers.
在這個實施例中,由於下偏振片132與上偏振片134之間僅設置位相差值範圍近似於待分析波長的二分之一之待測膜片S,發光單元陣列110的光線通過下偏振片132與待測膜片S後,將轉換為二倍慢軸與吸收軸夾角之與上偏振片134吸收軸方向實質上平行之線偏振光。在一些實施方式中,針對此位相差值區間的光線強度與位相差值之間的關係式定義為 。相似地, 為關聯於此區間的強度校正常數, 為關聯於此區間的系統相位平移校正常數。 與 根據檢測環境校正而得。值得注意的是,在針對此位相差值區間的一些實施方式中,光學檢測系統10可以省略標準片133。省略標準片133的光學檢測系統10請參照第2圖,其為根據本揭露的另一些實施方式的光學檢測系統10的發光單元陣列110、光學膜片組130以及影像感測器160的示意圖。 In this embodiment, since the phase difference between the lower polarizer 132 and the upper polarizer 134 is only set to a test film S with a phase difference range approximately half that of the wavelength to be analyzed, the light from the emitting unit array 110, after passing through the lower polarizer 132 and the test film S, will be converted into linearly polarized light whose angle between twice the slow axis and the absorption axis is substantially parallel to the absorption axis direction of the upper polarizer 134. In some embodiments, the relationship between the light intensity and the phase difference value within this phase difference range is defined as follows: Similarly, To calibrate the constants of the intensity related to this interval, The phase shift calibration constants for systems related to this region are used. and It is obtained by calibration according to the detection environment. It is worth noting that in some embodiments targeting this phase difference range, the standard sheet 133 may be omitted from the optical detection system 10. For the optical detection system 10 omitting the standard sheet 133, please refer to Figure 2, which is a schematic diagram of the light-emitting unit array 110, the optical film group 130, and the image sensor 160 of the optical detection system 10 according to other embodiments of this disclosure.
當待測膜片S可能的位相差值範圍近似於待分析波長的四分之三時,標準片133包括四分之一波片,且標準片133之慢軸方向與待測膜片S之慢軸方向實質上垂直。在一些實施方式中,位相差值範圍預設為在 與 之間。舉例來說,選定待分析波長 為550奈米,所採用的標準片133參考位相差值 為142奈米,則當待測膜片S的可能位相差值落在275奈米與417奈米之間時,採用四分之一波片作為標準片133。 When the possible phase difference range of the diaphragm S under test is approximately three-quarters of the wavelength to be analyzed, the standard plate 133 includes a quarter-wave plate, and the slow axis direction of the standard plate 133 is substantially perpendicular to the slow axis direction of the diaphragm S under test. In some embodiments, the phase difference range is preset to be within... and In between. For example, selecting the wavelength to be analyzed. The standard wafer used is 133 reference phase difference value, which is 550 nanometers. If the phase difference is 142 nm, then when the possible phase difference of the test film S falls between 275 nm and 417 nm, a quarter-wave plate is used as the standard plate 133.
在這個實施例中,標準片133的慢軸與下偏振片132的吸收軸、上偏振片134的吸收軸之間具有實質上-45度的夾角。進一步來說,標準片133的慢軸與下偏振片132的吸收軸之間的夾角為實質上135度。在一些實施方式中,針對此位相差值區間的光線強度與位相差值之間的關係式定義為 。相似地, 為關聯於此區間的強度校正常數, 為關聯於此區間的系統相位平移校正常數。 與 根據檢測環境校正而得。 In this embodiment, the slow axis of the standard plate 133 forms an angle of -45 degrees with the absorption axis of the lower polarizer 132 and the absorption axis of the upper polarizer 134. More specifically, the angle between the slow axis of the standard plate 133 and the absorption axis of the lower polarizer 132 is 135 degrees. In some embodiments, the relationship between the light intensity and the phase difference value within this phase difference region is defined as follows: Similarly, To calibrate the constants of the intensity related to this interval, The phase shift calibration constants for systems related to this region are used. and It is obtained by calibration based on the testing environment.
值得注意的是,在相同的檢測環境中, 、 以及 可能分別具有不同的值,同時 、 以及 可能分別具有不同的值。此外,在相同的檢測環境中,校正常數並非每次檢測都需進行調整,而是僅需周期性校正,以防止系統因發光單元的發光強度衰減、元件螺絲鬆脫或光學元件震動偏移而產生偏差。 It is worth noting that, in the same testing environment, , as well as They may have different values, at the same time , as well as They may have different values. In addition, in the same detection environment, the calibration constant does not need to be adjusted for every detection, but only needs to be calibrated periodically to prevent the system from deviating due to the attenuation of the luminous intensity of the luminous unit, loose component screws, or vibration and displacement of optical components.
在一些實施方式中,處理器170中預先寫有演算法,以進行待測膜片位相差值的分析。舉例來說,定義參數 ,其中 為待測膜片在檢測面積範圍內的位相差值的標準差, 則為位相差值的平均值。參數 可以作為檢測面積範圍內的位相差值均勻程度的指標。參數 越小,則均勻程度越高。舉例來說,參數 小於0.7為較佳的製程結果。 In some embodiments, the processor 170 has an algorithm pre-written to analyze the phase difference values of the membrane under test. For example, parameters are defined. ,in The standard deviation of the phase difference value of the diaphragm under test within the detection area is denoted as . This is the average of the phase difference values. Parameter It can be used as an indicator of the uniformity of phase difference values within a measured area. Parameters The smaller the value, the higher the uniformity. For example, the parameter... A value less than 0.7 is considered a better process result.
此外,演算法也可以基於正規化(normalize)後的位相差值,判斷補償膜塗佈的液晶排列均勻性的分布情況。舉例來說,定義正規化位相差值 。正規化位相差值越接近1,則均勻性越佳。 Furthermore, the algorithm can also determine the distribution of liquid crystal alignment uniformity in the compensation film coating based on the normalized phase difference value. For example, the normalized phase difference value is defined as follows: The closer the normalized phase difference is to 1, the better the uniformity.
在一些實施方式中,如第1圖中所示,光學檢測系統10還包括光學鏡組150。光學鏡組150位於影像感測器160與光學膜片組130之間。進一步來說,光學鏡組150位於影像感測器160與上偏振片134之間。在一些實施方式中,光學鏡組150包括至少一透鏡,配置以使大面積範圍的光線縮束至影像感測器160的接收範圍內。通過選用合適的透鏡,可以調整檢測的解析度,有助於改善因亮度、色度不均勻導致的斑紋缺陷(mura)。在一些實施方式中,光學鏡組150還包括光圈,配置以調整光通量。In some embodiments, as shown in Figure 1, the optical detection system 10 further includes an optical mirror assembly 150. The optical mirror assembly 150 is located between the image sensor 160 and the optical film assembly 130. More specifically, the optical mirror assembly 150 is located between the image sensor 160 and the upper polarizer 134. In some embodiments, the optical mirror assembly 150 includes at least one lens configured to narrow a large area of light to the receiving range of the image sensor 160. By selecting an appropriate lens, the detection resolution can be adjusted, which helps to improve mura defects caused by brightness and chromaticity inhomogeneities. In some embodiments, the optical mirror assembly 150 also includes an aperture configured to adjust the light throughput.
在一些實施方式中,如第1圖中所示,光學檢測系統10還包括支架140與玻璃板142。藉由支架140將發光單元陣列110與光學膜片組130的至少一部分容置於一空間,使得檢測過程中光線可以在足夠暗的空間內傳遞,以提高檢測的精準度。如第1圖中所示,玻璃板142連接於支架140的一側並設置於標準片133上方,使待測膜片S可以放置於玻璃板142上。在一些實施方式中,待測膜片S為捲料,放置於玻璃板142上可使其更便於移動。舉例來說,待測膜片S配置以允許沿著其機械方向(machine direction, MD)如方向D2展開。In some embodiments, as shown in Figure 1, the optical detection system 10 further includes a support 140 and a glass plate 142. The support 140 houses at least a portion of the light-emitting unit array 110 and the optical film assembly 130 within a space, allowing light to travel in a sufficiently dark space during detection, thereby improving detection accuracy. As shown in Figure 1, the glass plate 142 is connected to one side of the support 140 and positioned above the standard sheet 133, allowing the film under test S to be placed on the glass plate 142. In some embodiments, the film under test S is a roll, which facilitates its movement when placed on the glass plate 142. For example, the film under test S is configured to allow unfolding along its machine direction (MD), such as direction D2.
請參照第3圖,其為根據本揭露的一些實施方式的光學檢測方法20的流程圖。如第3圖中所示,光學檢測方法20包括步驟S201至步驟S209。首先,步驟S201基於待測膜片可能具有的位相差值所在的範圍選定參數。如前所述,隨著待測膜片可能的位相差值所在的區間不同,分別定義有不同的檢測系統架構與檢測參數。其中檢測參數可能包括發光單元陣列的發光強度與關係式的校正常數。一般來說,可以根據待測膜片的厚度推估其位相差的理論值,或可以使用例如Axometrics公司生產的AxoScan量測待測膜片單點的位相差值作為代表。Please refer to Figure 3, which is a flowchart of an optical detection method 20 according to some embodiments of this disclosure. As shown in Figure 3, the optical detection method 20 includes steps S201 to S209. First, step S201 selects parameters based on the range of possible phase difference values that the film under test may have. As mentioned earlier, different detection system architectures and detection parameters are defined depending on the range of possible phase difference values of the film under test. The detection parameters may include the luminous intensity of the luminous unit array and the calibration constant of the relational expression. Generally, the theoretical value of the phase difference can be estimated based on the thickness of the film under test, or the phase difference value of a single point on the film under test can be measured using, for example, an AxoScan manufactured by Axometrics Corporation as a representative value.
接著,步驟S202設置發光單元陣列與光學膜片組,其中光學膜片組位於發光單元陣列的出光方向上。如前所述,光學膜片組可能包括擴散片、下偏振片、標準片以及上偏振片,沿著出光方向依序疊設於發光單元陣列上方。Next, in step S202, an array of light-emitting units and an optical film assembly are arranged, wherein the optical film assembly is located in the light-emitting direction of the array of light-emitting units. As mentioned above, the optical film assembly may include a diffuser, a lower polarizer, a standard plate, and an upper polarizer, which are sequentially stacked above the array of light-emitting units along the light-emitting direction.
接著,步驟S203設置待測膜片於光學膜片組中。如前所述,待測膜片可能為捲料,並設置於光學膜片組的標準片與上偏振片之間。Next, in step S203, the film to be tested is placed in the optical film assembly. As mentioned earlier, the film to be tested may be a roll of material and is placed between the standard film and the upper polarizer in the optical film assembly.
接著,步驟S204調整發光單元陣列的發光強度,並使光線通過光學膜片組發射至影像感測器。其中發光強度關聯於待測膜片的位相差值區間。Next, step S204 adjusts the luminous intensity of the luminous unit array and transmits the light through the optical film assembly to the image sensor. The luminous intensity is related to the phase difference range of the film under test.
接著,步驟S205驅使影像感測器接收光線並拍攝影像。在一些實施方式中,影像感測器與光學膜片組之間設置有光學鏡組。光線通過光學膜片組與光學鏡組後由影像感測器接收,以調整檢測範圍與光通量。Next, step S205 drives the image sensor to receive light and capture an image. In some embodiments, an optical mirror assembly is provided between the image sensor and the optical film assembly. After passing through the optical film assembly and the optical mirror assembly, the light is received by the image sensor to adjust the detection range and light flux.
接著,步驟S206確認影像感測器所獲得的影像是否過曝或欠曝。在一些實施方式中,設置處理器訊號連接於影像感測器。處理器自影像感測器接收影像並基於影像中各像素的256級灰階值判斷影像是否過曝或欠曝。舉例來說,定義256級灰階值大於或等於245時判定為過曝,256級灰階值小於或等於10時判定為欠曝。Next, step S206 confirms whether the image acquired by the image sensor is overexposed or underexposed. In some embodiments, a processor signal is connected to the image sensor. The processor receives the image from the image sensor and determines whether the image is overexposed or underexposed based on the 256 grayscale values of each pixel in the image. For example, an overexposed image is defined as a grayscale value greater than or equal to 245, and an underexposed image is defined as a grayscale value less than or equal to 10.
若處理器判定影像存在過曝或欠曝的情況,則執行步驟S207,調整發光單元陣列的發光強度,直到處理器判定影像沒有過曝與欠曝的問題為止,並修正校正常數(例如前述關係式中的常數 、 、 、 、 以及 )。舉例來說,調整前的發光強度為 ,調整後的發光強度為 ,則校正常數 修正為 ,以此類推。 If the processor determines that the image is overexposed or underexposed, it executes step S207 to adjust the light intensity of the light-emitting unit array until the processor determines that the image is not overexposed or underexposed, and corrects the calibration constants (such as the constants in the aforementioned relationship). , , , , as well as For example, the luminous intensity before adjustment was... The adjusted luminous intensity is Then correct the positive constants. Revised to And so on.
當處理器判定影像沒有過曝與欠曝後,執行步驟S208。在步驟S208中,處理器基於影像獲取光線的強度值。在一些實施方式中,如前所述,處理器通過影像獲取影像感測器中各像素單元所接收到的光線的256級灰階值作為光線強度值。Once the processor determines that the image is neither overexposed nor underexposed, it executes step S208. In step S208, the processor acquires the light intensity value based on the image. In some embodiments, as described above, the processor acquires 256 grayscale values of the light received by each pixel unit in the image sensor as the light intensity value.
接著,步驟S209基於光線的強度值與關係式獲取各像素的位相差值。如此一來,可以一次獲取大面積的待測膜片的二維位相差資訊,以供處理器分析二維位相差分布的均勻程度。Next, step S209 obtains the phase difference value of each pixel based on the intensity value of the light and the relational expression. In this way, two-dimensional phase difference information of a large area of the film under test can be obtained at once, so that the processor can analyze the uniformity of the two-dimensional phase difference distribution.
在一些實施方式中,可以將待測膜片替換為已知位相差值分布的標準補償膜,接著選定不會使影像過曝與欠曝的發光強度,執行步驟S202至步驟S208,並將所獲取的光線強度值代入關係式中,在已知強度值與位相差值的情況下,可以獲得關聯於檢測環境的校正常數(例如前述關係式中的常數 、 、 、 、 以及 )。 In some implementations, the film under test can be replaced with a standard compensation film with a known phase difference distribution. Then, an luminous intensity that will not cause overexposure or underexposure of the image is selected, and steps S202 to S208 are executed. The obtained light intensity values are substituted into the relational formula. With the intensity values and phase difference values known, calibration constants related to the detection environment (such as the constants in the aforementioned relational formula) can be obtained. , , , , as well as ).
以上對於本揭露的具體實施方式的詳述,可以明顯地看出,於本揭露的一些實施方式的光學檢測方法與光學檢測系統中,使用發光單元陣列發射光線通過光學膜片組與待測膜片,並使用影像感測器獲取影像,可以一次獲得大面積的待測膜片的二維位相差資訊,節省檢測掃描的時間,且便於通過處理器預設的演算法快速分析位相差的均勻程度,因此可以在產線上進行實時檢測,隨時調整製程。此外,通過光學鏡組可以調整檢測的解析度,以利於改善膜面斑紋缺陷。The detailed description of the specific embodiments disclosed above clearly shows that in some embodiments of the optical detection method and optical detection system disclosed herein, light emitted by an array of emitting units passes through an optical film assembly and the film under test, and an image sensor acquires the image. This allows for the acquisition of two-dimensional phase difference information of a large area of the film under test in a single operation, saving detection and scanning time. Furthermore, the uniformity of the phase difference can be quickly analyzed using algorithms preset in the processor. Therefore, real-time detection can be performed on the production line, allowing for process adjustments at any time. In addition, the detection resolution can be adjusted using an optical mirror assembly to improve the appearance of film surface defects.
前面描述內容僅對於本揭露的示例性實施例給予說明和描述,並無意窮舉或限制本揭露所公開的發明的精確形式。以上教示可以被修改或者進行變化。The foregoing description is merely illustrative and descriptive of exemplary embodiments of this disclosure and is not intended to exhaustively illustrate or limit the precise form of the invention disclosed herein. The teachings above may be modified or varied.
被選擇並說明的實施例是用以解釋本揭露的內容以及他們的實際應用從而激發本領域的技術人員利用本揭露及各種實施例,並且進行各種修改以符合預期的特定用途。在不脫離本揭露的精神和範圍的前提下,替代性實施例將對於本領域的技術人員來說為顯而易見者。因此,本揭露的範圍是根據所附發明申請專利範圍而定,而不是被前述說明書和其中所描述的示例性實施例所限定。The selected and illustrated embodiments are intended to explain the content of this disclosure and their practical application, thereby inspiring those skilled in the art to utilize this disclosure and the various embodiments, and to make various modifications to suit a particular intended use. Alternative embodiments will be obvious to those skilled in the art without departing from the spirit and scope of this disclosure. Therefore, the scope of this disclosure is determined by the scope of the appended invention claims, and not by the foregoing description and the exemplary embodiments described therein.
10:光學檢測系統 20:光學檢測方法 110:發光單元陣列 120:控制器 130:光學膜片組 131:擴散片 132:下偏振片 133:標準片 134:上偏振片 140:支架 142:玻璃板 150:光學鏡組 160:影像感測器 170:處理器 B,G,R:子畫素單元 D1,D2:方向 P:像素單元 S:待測膜片 S201,S202,S203,S204,S205,S206,S207,S208,S209:步驟 10: Optical Detection System 20: Optical Detection Method 110: Light Emitting Unit Array 120: Controller 130: Optical Film Assembly 131: Diffuser 132: Lower Polarizer 133: Standard Plate 134: Upper Polarizer 140: Support 142: Glass Plate 150: Optical Mirror Assembly 160: Image Sensor 170: Processor B, G, R: Subpixel Unit D1, D2: Orientation P: Pixel Unit S: Film Under Test S201, S202, S203, S204, S205, S206, S207, S208, S209: Steps
圖式繪示了本揭露的一個或多個實施例,並且與書面描述一起用於解釋本揭露的原理。在所有圖式中,盡可能使用相同的圖式標記指代實施例的相似或相同元件,其中: 第1圖為根據本揭露的一些實施方式的光學檢測系統的示意圖。 第2圖為根據本揭露的另一些實施方式的光學檢測系統的發光單元陣列、光學膜片組以及影像感測器的示意圖。 第3圖為根據本揭露的一些實施方式的光學檢測方法的流程圖。 The figures illustrate one or more embodiments of this disclosure and, together with the written description, serve to explain the principles of this disclosure. Throughout the figures, the same stylistic reference numerals are used as much as possible to refer to similar or identical elements of the embodiments, wherein: Figure 1 is a schematic diagram of an optical detection system according to some embodiments of this disclosure. Figure 2 is a schematic diagram of an emitting unit array, an optical film assembly, and an image sensor of an optical detection system according to other embodiments of this disclosure. Figure 3 is a flowchart of an optical detection method according to some embodiments of this disclosure.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic Storage Information (Please record in order of storage institution, date, and number) None International Storage Information (Please record in order of storage country, institution, date, and number) None
20:光學檢測方法 S201,S202,S203,S204,S205,S206,S207,S208,S209:步驟 20: Optical Detection Methods S201, S202, S203, S204, S205, S206, S207, S208, S209: Procedures
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| US5828500A (en) * | 1995-10-11 | 1998-10-27 | Asahi Kogaku Kogyo Kabushiki Kaisha | Optical element inspecting apparatus |
| US20090051916A1 (en) * | 2006-01-13 | 2009-02-26 | National University Corporation Tokyo University Of Agriculture And Technology | Measuring Apparatus, Measuring Method, and Characteristic Measurement Unit |
| EP2078944A2 (en) * | 2008-01-14 | 2009-07-15 | Gwangju Institute of Science and Technology | Apparatus for measuring residual stress of optical fiber |
| CN110050182A (en) * | 2016-12-08 | 2019-07-23 | 皇家飞利浦有限公司 | Apparatus and method for determining refractive index |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5828500A (en) * | 1995-10-11 | 1998-10-27 | Asahi Kogaku Kogyo Kabushiki Kaisha | Optical element inspecting apparatus |
| US20090051916A1 (en) * | 2006-01-13 | 2009-02-26 | National University Corporation Tokyo University Of Agriculture And Technology | Measuring Apparatus, Measuring Method, and Characteristic Measurement Unit |
| EP2078944A2 (en) * | 2008-01-14 | 2009-07-15 | Gwangju Institute of Science and Technology | Apparatus for measuring residual stress of optical fiber |
| CN110050182A (en) * | 2016-12-08 | 2019-07-23 | 皇家飞利浦有限公司 | Apparatus and method for determining refractive index |
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