TWI903125B - Manufacturing method of protective film and electronic device packaging - Google Patents
Manufacturing method of protective film and electronic device packagingInfo
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- TWI903125B TWI903125B TW111143663A TW111143663A TWI903125B TW I903125 B TWI903125 B TW I903125B TW 111143663 A TW111143663 A TW 111143663A TW 111143663 A TW111143663 A TW 111143663A TW I903125 B TWI903125 B TW I903125B
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Abstract
本發明提供一種保護片,其用於電路基板,所述保護片具有第一面及與第一面為相反面的第二面,所述保護片中,第一面的利用探針黏性試驗所得的黏著力為0.15 N/cm2以下,且由下述式1求出的指數X為0.5~2.0,以1.0重量%~9.8重量%的含量包含填料。[式1]X=Ftotal/Ttotal(Ftotal;於將製成0.5 cm×1.0 cm的長方形的保護片於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),Ttotal;保護片的總厚度(μm))This invention provides a protective sheet for use on a circuit board, the protective sheet having a first side and a second side opposite to the first side, wherein the adhesive force of the first side obtained by probe adhesion test is less than 0.15 N/ cm2 , and the index X calculated by the following formula 1 is 0.5 to 2.0, and the protective sheet contains filler at a content of 1.0% to 9.8% by weight. [Formula 1] X = F total / T total (F total ; the average value (μm) of the flow length of the four sides of the most flowable part when a 0.5 cm × 1.0 cm rectangular protective sheet is heated and pressed at 180°C and 1 MPa for 5 minutes, T total ; the total thickness (μm) of the protective sheet)
Description
本發明是有關於一種保護片及電子器件封裝的製造方法。This invention relates to a method for manufacturing a protective sheet and an electronic device package.
已知有於搭載有積體電路(integrated circuit,IC)晶片的基板上形成絕緣層,保護晶片免受電磁波的影響的方法(例如,專利文獻1)。[專利文獻1]美國專利7,445,968公報A method is known for forming an insulation layer on a substrate on which an integrated circuit (IC) chip is mounted to protect the chip from electromagnetic waves (e.g., Patent 1). [Patent 1] U.S. Patent 7,445,968
於本發明的第一形態中,提供一種保護片,用於電路基板,所述保護片具有第一面及與第一面為相反面的第二面,所述保護片中,第一面的利用探針黏性試驗所得的黏著力為0.15 N/cm2以下,且由下述式1求出的指數X為0.5~2.0,所述保護片以1.0重量%~9.8重量%的含量包含填料。[式1]X=Ftotal/Ttotal(Ftotal;於將製成0.5 cm×1.0 cm的長方形的保護片於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),Ttotal;保護片的總厚度(μm))In a first embodiment of the present invention, a protective sheet is provided for use on a circuit board. The protective sheet has a first side and a second side opposite to the first side. The adhesive force of the first side, obtained by a probe adhesion test, is less than 0.15 N/ cm² , and the index X calculated by Equation 1 below is 0.5 to 2.0. The protective sheet contains filler at a content of 1.0% to 9.8% by weight. [Equation 1] X = F total / T total (F total ; the average value (μm) of the flow length of the four sides of the most flowable portion when a 0.5 cm × 1.0 cm rectangular protective sheet is heated and pressed at 180°C and 1 MPa for 5 minutes, T total ; the total thickness (μm) of the protective sheet)
所述保護片的拉伸斷裂強度可為10 N/mm2~70 N/mm2。The tensile breaking strength of the protective sheet can be 10 N/ mm² to 70 N/ mm² .
所述保護片可包括第一保護層及第二保護層。第一保護層可為所述保護片的所述第一面側的最表層。進而,第二保護層於所述保護片中可為所述第二面側的最表層。The protective sheet may include a first protective layer and a second protective layer. The first protective layer may be the outermost layer on the first side of the protective sheet. Furthermore, the second protective layer in the protective sheet may be the outermost layer on the second side.
於所述任一保護片中,所述第二保護層的由下述式2求出的指數Y可為0.5~1.5。[式2]Y=F2/T2(F2;於將製成0.5 cm×1.0 cm的長方形的第二保護層於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T2;第二保護層的厚度(μm))In any of the protective sheets, the exponent Y of the second protective layer, calculated by the following formula 2, can be 0.5 to 1.5. [Formula 2] Y = F 2 / T 2 (F 2 ; the average value (μm) of the flow length of the four sides of the most flowable part when the second protective layer, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes, and T 2 ; the thickness (μm) of the second protective layer)
於所述任一保護片中,第一保護層的由下述式3求出的指數Z可為2.0~15.0。[式3]Z=F1/T1(F1;於將製成0.5 cm×1.0 cm的長方形的第一保護層於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T1;第一保護層的厚度(μm))In any of the protective sheets, the index Z of the first protective layer, calculated by the following formula 3, can be 2.0 to 15.0. [Formula 3] Z = F 1 / T 1 (F 1 ; the average value (μm) of the flow length of the four sides of the most flowable part when the first protective layer, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes, and T 1 ; the thickness (μm) of the first protective layer)
於所述任一保護片中,第二保護層的玻璃轉移溫度可為60℃以下。In any of the protective sheets, the glass transition temperature of the second protective layer can be below 60°C.
於所述任一保護片中,第一保護層的膜厚可為5 μm~150 μm,第二保護層的膜厚可為10 μm~200 μm。In any of the protective sheets, the thickness of the first protective layer can be 5 μm to 150 μm, and the thickness of the second protective layer can be 10 μm to 200 μm.
於所述任一保護片中,可於第一保護層與所述第二保護層之間包括第三保護層。進而,第三保護層的由下述式4求出的指數W可為1.0~3.0。[式4]W=F3/T3(F3;於將製成0.5 cm×1.0 cm的長方形的第三保護層於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T3;第三保護層的厚度(μm))In any of the protective sheets, a third protective layer may be included between the first protective layer and the second protective layer. Furthermore, the index W of the third protective layer, calculated by Equation 4 below, may be 1.0 to 3.0. [Equation 4] W = F <sub>3</sub> / T <sub>3</sub> (F <sub>3</sub> : the average value (μm) of the flow length of the four sides of the most fluid portion when the third protective layer, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes), T <sub>3 </sub>: the thickness (μm) of the third protective layer)
於所述任一保護片中,第三保護層的膜厚可為20 μm~200 μm。In any of the protective sheets, the thickness of the third protective layer can be 20 μm to 200 μm.
於所述任一保護片中,第一保護層、第二保護層及第三保護層可包含聚胺基甲酸酯系樹脂、硬化劑。In any of the protective sheets, the first protective layer, the second protective layer, and the third protective layer may contain polyurethane resin and a hardener.
於所述任一保護片中,保護片可包含填料,保護片的所述第二面側的填料的質量濃度可較所述第一面側大。In any of the protective sheets, the protective sheet may include filler, and the mass concentration of the filler on the second side of the protective sheet may be greater than that on the first side.
另外,於第二形態中,提供一種電子器件封裝,包括:電路基板,於表面設置有導電電路;電子器件,配置於電路基板上;以及保護層,設置於電路基板及電子器件上,電子器件於電路基板的主表面的觀察或自主表面的側面的觀察中具有五邊形以上的多邊形。In addition, in the second embodiment, an electronic device package is provided, comprising: a circuit substrate having conductive circuits disposed on its surface; an electronic device disposed on the circuit substrate; and a protective layer disposed on the circuit substrate and the electronic device, wherein the electronic device has a polygon with pentagons or more when viewed from the main surface of the circuit substrate or from the side of its own surface.
於所述電子器件封裝中,電子器件可於側面具有凹部。In the electronic device package, the electronic device may have a recess on its side.
於所述電子器件封裝的任一者中,電子器件於主表面的觀察中可具有五邊形以上的多邊形形狀。In any of the electronic device packages, the electronic device may have a polygonal shape of pentagon or more when viewed on the main surface.
另外,於第三形態中,提供一種電子器件封裝,包括:電路基板,於表面設置有導電電路;電子器件,配置於電路基板上;以及保護層,設置於電路基板及電子器件上,保護層至少部分地包覆將電子器件與電路基板電性連接的連接構件。In addition, in the third embodiment, an electronic device package is provided, comprising: a circuit substrate having conductive circuits disposed on its surface; an electronic device disposed on the circuit substrate; and a protective layer disposed on the circuit substrate and the electronic device, the protective layer at least partially covering a connection structure that electrically connects the electronic device to the circuit substrate.
於所述電子器件封裝中,連接構件可為配置於電子器件的下表面的凸塊。In the electronic device package, the connecting component may be a bump disposed on the lower surface of the electronic device.
於所述電子器件封裝的任一者中,連接構件可為搭載所述電子器件的引線框架。In any of the electronic device packages, the connection component may be a lead frame that carries the electronic device.
另外,於第四形態中,提供一種電子器件封裝,包括:電路基板,於表面設置有導電電路;電子器件,配置於電路基板上;以及保護層,設置於電路基板及電子器件上,電子器件具有積層陶瓷電容器(Multi-layer Ceramic Capacitors,MLCC)。In addition, in the fourth form, an electronic device package is provided, including: a circuit substrate having conductive circuits disposed on its surface; an electronic device disposed on the circuit substrate; and a protective layer disposed on the circuit substrate and the electronic device, wherein the electronic device has multi-layer ceramic capacitors (MLCCs).
於所述電子器件封裝中,保護層可包含至少兩層。In the electronic device package, the protective layer may include at least two layers.
於所述電子器件封裝的任一者中,保護層可為熱硬化性樹脂的硬化物。In any of the electronic device packages, the protective layer may be a hardened form of a thermosetting resin.
於所述電子器件封裝的任一者中,可於保護層上形成導電層。In any of the electronic device packages, a conductive layer may be formed on the protective layer.
於第五形態中,提供一種電子器件封裝的製造方法,包括如下步驟:於在表面設置有導電電路的基板上安裝有電子器件的安裝基板,以第一面朝向電子器件側的方式配置所述任一保護片,於安裝基板上形成由保護片形成的保護層。In the fifth aspect, a method for manufacturing an electronic device package is provided, comprising the following steps: mounting an electronic device on a mounting substrate on a substrate having conductive circuits disposed on its surface, arranging any one of the protective sheets with its first surface facing the electronic device side, and forming a protective layer formed by the protective sheet on the mounting substrate.
於所述製造方法中,形成保護層的步驟可包括在配置所述保護片後將其熱壓於所述安裝基板。In the manufacturing method, the step of forming the protective layer may include hot-pressing the protective sheet onto the mounting substrate after it has been disposed.
於所述製造方法中,可更包括在保護層上形成導電層的步驟。The manufacturing method may further include a step of forming a conductive layer on the protective layer.
再者,所述發明的概要並未列舉本發明的必要特徵的全部。另外,該些特徵群的次組合(subcombination)亦可成為發明。Furthermore, the summary of the invention does not list all the essential features of the invention. In addition, subcombinations of these feature groups can also constitute an invention.
以下,通過發明的實施方式對本發明進行說明,但以下的實施方式並不限定申請專利範圍所涉及的發明。另外,實施方式中所說明的特徵的組合未必全部為發明的解決手段所必需的。The present invention will now be described through embodiments, but these embodiments do not limit the scope of the invention covered by the patent application. Furthermore, the combination of features described in the embodiments may not all be necessary for the solutions provided in the invention.
圖1表示本實施方式的電子器件封裝100的一例。電子器件封裝100是安裝有IC晶片等電子器件的封裝,具有良好的電磁波屏蔽性與散熱性。電子器件封裝100包括電路基板10、電子器件20及電子器件22(以下,亦簡稱為「電子器件20等」)、連接構件24、保護層30、以及導電層40。Figure 1 shows an example of an electronic device package 100 according to this embodiment. The electronic device package 100 is a package that houses electronic devices such as IC chips and has good electromagnetic wave shielding and heat dissipation. The electronic device package 100 includes a circuit board 10, electronic devices 20 and 22 (hereinafter also referred to as "electronic devices 20, etc."), a connection component 24, a protective layer 30, and a conductive layer 40.
電路基板10於表面設置有導電電路(未圖示),搭載電子器件20等。電路基板10可為印刷配線基板或安裝模組基板等。導電電路可為由銅等導電金屬或包含導電金屬的材料形成的電路。電路基板10可為剛性基板或可撓性基板。The circuit substrate 10 has conductive circuits (not shown) disposed on its surface and carries electronic devices 20, etc. The circuit substrate 10 may be a printed wiring board or a mounting module board, etc. The conductive circuit may be a circuit formed of a conductive metal such as copper or a material containing a conductive metal. The circuit substrate 10 may be a rigid substrate or a flexible substrate.
視需要可對電路基板10進行加工。例如,可於電路基板10上設置印字、標記、及切割槽等。The circuit board 10 can be processed as needed. For example, printing, marking, and cutting grooves can be provided on the circuit board 10.
電子器件20等配置於電路基板10上,發揮各種功能。電子器件20等例如可為記憶體晶片、電源晶片、音源晶片或中央處理單元(central processing unit,CPU)晶片等積體電路、電晶體或二極體等主動元件、或積層陶瓷電容器(MLCC)等電容器、熱阻器、電感器或電阻等被動元件。特別是MLCC於側面具有外部電極,就防止與其他導電體的接觸或漏電的觀點而言,絕緣保護的必要性特別高。藉由後述的本實施方式的保護片,可利用保護層30充分地對MLCC的零件整體進行絕緣保護。Electronic devices 20 and the like are disposed on the circuit board 10 and perform various functions. These electronic devices 20 can be, for example, integrated circuits such as memory chips, power supply chips, audio chips, or central processing unit (CPU) chips; active components such as transistors or diodes; or passive components such as multilayer ceramic capacitors (MLCCs); and thermal resistors, inductors, or resistors. In particular, since MLCCs have external electrodes on their sides, insulation protection is especially necessary to prevent contact with other conductors or leakage. With the protective sheet of this embodiment, described later, the protective layer 30 can adequately insulate the entire MLCC component.
電子器件20等可為立方體或長方體形狀。電子器件20等可為更複雜的形狀,於電路基板的主表面(圖1中的XY平面)的觀察中可具有五邊形以上的多邊形。The electronic device 20 can be cubic or cuboid in shape. The electronic device 20 can also have more complex shapes, and can have polygons with more than pentagons when observed on the main surface of the circuit substrate (XY plane in FIG1).
例如,電子器件20等中,自主表面觀察到的平面形狀可為六邊形、八邊形或其他多邊形。作為一例,電子器件22可為平面形狀為八邊形的電感器。另外,電子器件20等在自主表面的側面(圖1中的XZ平面或YZ平面等)的觀察中可具有五邊形以上的多邊形。例如,電子器件20等可為於側面具有凹部或凸部的立方體或長方體形狀,電子器件22可為於側面設置有用於形成線圈的凹部的電感器。For example, in electronic devices such as 20, the planar shape observed on the autonomous surface can be hexagonal, octagonal, or other polygonal. As an example, electronic device 22 can be an inductor with an octagonal planar shape. Furthermore, electronic devices such as 20 can have polygons of pentagonal or more when observed on the side of their autonomous surface (such as the XZ plane or YZ plane in FIG. 1). For example, electronic device 20 can be a cubic or cuboid shape with concave or convex portions on the side, and electronic device 22 can be an inductor with concave portions on the side for forming a coil.
電子器件20等可於電路基板10上配置單個或多個。例如,電子器件20等可於電路基板10上形成在n×m個陣列上(n及m是2以上的整數)。One or more electronic devices 20 may be disposed on the circuit substrate 10. For example, electronic devices 20 may be formed on n×m arrays on the circuit substrate 10 (n and m are integers greater than 2).
電子器件20等的厚度理想的是2000 μm以下。這是因為,若超過2000 μm,則於形成保護層30及導電層40時,有可能會因與電路基板10的階差而發生斷掉。另外,電子器件20彼此的間隔理想的是50 μm以上。這是因為,若間隔未滿50 μm,則有可能無法充分形成保護層30及導電層40。Ideally, the thickness of the electronic devices 20 should be less than 2000 μm. This is because if it exceeds 2000 μm, the protective layer 30 and the conductive layer 40 may break due to the step difference with the circuit substrate 10 during formation. Furthermore, the spacing between the electronic devices 20 should ideally be more than 50 μm. This is because if the spacing is less than 50 μm, the protective layer 30 and the conductive layer 40 may not be sufficiently formed.
連接構件24將電子器件20等與電路基板10電性連接。連接構件24可包含配置於電子器件20等的下表面的焊料球等凸塊、搭載電子器件20等的引線框架、及接合線中的一個以上。於圖1的例子中,作為將電子器件20與電路基板10連接的連接構件24,可使用凸塊。The connection component 24 electrically connects the electronic device 20 and the circuit board 10. The connection component 24 may include one or more of the following: solder balls or bumps disposed on the lower surface of the electronic device 20, a lead frame supporting the electronic device 20, and bonding wires. In the example of FIG1, bumps may be used as the connection component 24 for connecting the electronic device 20 and the circuit board 10.
保護層30設置於電路基板10及電子器件20等上,保護電路基板10及電子器件20等免受電磁波、衝擊等的影響。另外,保護層30亦具有自導電層40對電路基板10及電子器件20等進行絕緣保護的作用。保護層30可覆蓋電子器件20等與電路基板10中未設置電子器件20等的區域的整體或一部分上。保護層30可僅覆蓋電路基板10中設置有導電電路的區域,亦可不覆蓋無導電電路的部分。A protective layer 30 is disposed on the circuit substrate 10 and electronic devices 20, etc., to protect the circuit substrate 10 and electronic devices 20 from the influence of electromagnetic waves, shocks, etc. In addition, the protective layer 30 also functions as a self-conductive layer 40 to provide insulation protection for the circuit substrate 10 and electronic devices 20. The protective layer 30 may cover the entirety or a portion of the electronic devices 20 and other areas of the circuit substrate 10 where electronic devices 20 are not disposed. The protective layer 30 may cover only the areas of the circuit substrate 10 where conductive circuits are disposed, or it may not cover the parts without conductive circuits.
即使於如所述般電子器件20等具有多邊形等複雜的形狀的情況下,保護層30亦充分地包覆電子器件20等。例如,即使如圖1所示般電子器件22於側面具有凹部的情況下,保護層30亦進入凹部的一部分或整體而保護電子器件22。另外,即使電子器件20等為多邊形般保護層30的膜厚容易變薄的角的數量多的形狀,本實施方式的保護層30亦可以充分的膜厚覆蓋角部分。Even when electronic devices such as 20 have complex shapes such as polygons, the protective layer 30 sufficiently covers the electronic devices 20. For example, even when electronic devices 22, as shown in FIG. 1, have recesses on their sides, the protective layer 30 penetrates into part or all of the recesses to protect the electronic devices 22. Furthermore, even when electronic devices such as 20 have polygonal shapes with many corners where the protective layer 30's film thickness is easily thinned, the protective layer 30 of this embodiment can sufficiently cover the corner portions.
保護層30可至少部分地包覆連接構件24。例如,於圖1中,保護層30包覆作為凸塊的連接構件24的側面。即使於連接構件24包含引線框架或接合線的情況下,保護層30亦可包覆該些的至少一部分。The protective layer 30 may at least partially cover the connecting member 24. For example, in FIG1, the protective layer 30 covers the side of the connecting member 24, which is a protrusion. Even if the connecting member 24 includes a lead frame or a bonding wire, the protective layer 30 may cover at least a portion of those.
保護層30可為熱硬化性樹脂的硬化物等。保護層30可包含至少兩層。例如,保護層30可為兩層、三層或四層以上。為了將保護層30的膜厚保持於適當的範圍,保護層30較佳為三層。此種層可為源自後述的保護片的層結構而形成者。保護層30的層結構及材料等將於後面敘述。The protective layer 30 may be a cured form of a thermosetting resin, etc. The protective layer 30 may comprise at least two layers. For example, the protective layer 30 may have two, three, or four or more layers. To maintain the film thickness of the protective layer 30 within an appropriate range, the protective layer 30 is preferably three layers. Such layers may be formed from the layer structure derived from the protective sheet described later. The layer structure and materials of the protective layer 30 will be described later.
保護層30的膜厚可根據場所而不同。例如,於電子器件20等的角部中,保護層30的膜厚可較電子器件20等的頂表面而言膜厚更薄。另外,例如於電子器件20等與電路基板10相接的角凹部中,保護層30的膜厚可較電子器件20等的頂表面而言更厚。The thickness of the protective layer 30 can vary depending on the location. For example, at the corner of an electronic device 20, the protective layer 30 may be thinner than the top surface of the electronic device 20. Conversely, at a corner recess where an electronic device 20 contacts the circuit substrate 10, the protective layer 30 may be thicker than the top surface of the electronic device 20.
導電層40設置於保護層30上,保護電子器件20等免受外部電磁波的影響、及/或將自電子器件20等產生的熱釋放到外部。導電層40可為包含金屬的層。例如,導電層40可為由金屬本身形成的金屬薄膜、或者分散有導電填料的樹脂層。導電層40的材料等的詳細情況將於後面敘述。A conductive layer 40 is disposed on the protective layer 30 to protect the electronic device 20 from the influence of external electromagnetic waves and/or to dissipate heat generated by the electronic device 20 to the outside. The conductive layer 40 may be a layer containing metal. For example, the conductive layer 40 may be a metal thin film formed of the metal itself, or a resin layer with dispersed conductive fillers. Details of the materials of the conductive layer 40 will be described later.
於包含導電填料的熱硬化性樹脂的情況下,導電層40的厚度可為2 μm~500 μm,較佳為可為5 μm~100 μm。另一方面,於鍍敷或蒸鍍、濺鍍的情況下,可為0.01 μm~10 μm,較佳為可為0.1 μm~5 μm。若厚度過薄,則電磁波阻擋效果或散熱效果及機械強度有可能變得不充分,若過厚,則產生電子器件封裝100過於大型化而體積增大的問題。In the case of thermosetting resins containing conductive fillers, the thickness of the conductive layer 40 can be 2 μm to 500 μm, preferably 5 μm to 100 μm. On the other hand, in the case of plating, evaporation, or sputtering, the thickness can be 0.01 μm to 10 μm, preferably 0.1 μm to 5 μm. If the thickness is too thin, the electromagnetic wave blocking effect, heat dissipation effect, and mechanical strength may become insufficient; if it is too thick, the electronic device package 100 will become too large, resulting in an increased volume.
導電層40中所使用的金屬薄膜及導電填料較佳為導電性及/或導熱性良好者,例如,可為體積電阻率為10-3Ω·cm以下及/或導熱率為10 W/m·K以上者。The metal film and conductive filler used in the conductive layer 40 are preferably those with good electrical conductivity and/or thermal conductivity, for example, those with a volume resistivity of less than 10⁻³ Ω·cm and/or a thermal conductivity of more than 10 W/m·K.
導電層40可與露出於電路基板10的側面或上表面的接地圖案及/或電子器件20的接地圖案連接。再者,電子器件封裝100亦可不具有導電層40。The conductive layer 40 may be connected to the grounding pattern exposed on the side or top surface of the circuit substrate 10 and/or the grounding pattern of the electronic device 20. Alternatively, the electronic device package 100 may not have the conductive layer 40.
如此,藉由本實施方式的電子器件封裝100,保護層30對具有複雜的形狀的電子器件20等、及連接構件24進行絕緣保護。另外,藉由電子器件封裝100,導電層40可保護電子器件20等免受電磁波的影響,同時可實現電子器件20等產生的熱的散熱。Thus, through the electronic device package 100 of this embodiment, the protective layer 30 provides insulation protection for electronic devices 20 and the connecting components 24, which have complex shapes. In addition, through the electronic device package 100, the conductive layer 40 can protect electronic devices 20 and the like from electromagnetic waves, while also dissipating the heat generated by electronic devices 20 and the like.
再者,如以下所說明般,保護層30可由保護片38形成。藉由保護片38,不會於保護層30與電路基板10之間產生夾著空氣的空氣夾雜,可充分地包覆複雜的形狀的電子器件20等的周圍而進行絕緣保護。Furthermore, as explained below, the protective layer 30 can be formed of a protective sheet 38. With the protective sheet 38, air entrapment will not occur between the protective layer 30 and the circuit board 10, and the complex-shaped electronic devices 20 and the like can be fully covered and insulatingly protected.
圖2表示本實施方式的保護片38的一例。保護片38是電路基板用的片,用於形成圖1所示的保護層30。如圖示般,保護片38具有第一保護層32、第二保護層34及第三保護層36。Figure 2 shows an example of the protective sheet 38 of this embodiment. The protective sheet 38 is a sheet for a circuit board used to form the protective layer 30 shown in Figure 1. As shown, the protective sheet 38 has a first protective layer 32, a second protective layer 34 and a third protective layer 36.
保護片38具有第一面(圖1的下側)及與第一面為相反面的第二面(圖1的上側)。第一面側為與電路基板10及電子器件20等相接之側,第二面側為與導電層40相接之側。第一保護層32是保護片38的第一面側的最表層。第二保護層34是第二面側的最表層。第三保護層36設置於第一保護層32與第二保護層34之間。The protective sheet 38 has a first side (the lower side of FIG. 1) and a second side (the upper side of FIG. 1) opposite to the first side. The first side is in contact with the circuit board 10 and electronic devices 20, and the second side is in contact with the conductive layer 40. The first protective layer 32 is the outermost layer of the first side of the protective sheet 38. The second protective layer 34 is the outermost layer of the second side. A third protective layer 36 is disposed between the first protective layer 32 and the second protective layer 34.
保護片38的第一面的利用探針黏性試驗所得的黏著力為0.15 N/cm2以下,較佳為0.12 N/cm2以下,更佳為0.10 N/cm2以下。探針黏性試驗可藉由與第十八修正日本藥典 一般試驗法 6.製劑試驗法 6.12黏著力試驗法 3.4探針黏性試驗法相同的試驗法或依據此的試驗法進行。The adhesive force obtained by probe adhesion test on the first side of the protective sheet 38 is less than 0.15 N/ cm² , preferably less than 0.12 N/ cm² , and more preferably less than 0.10 N/ cm² . The probe adhesion test can be performed by the same test method as or based on the test method in General Test Method 6.12 Adhesion Test Method 3.4 of the Eighteenth Amendment to the Japanese Pharmacopoeia.
藉由黏著力滿足所述範圍,於將保護片38配置於電路基板10時,可抑制保護片38的黏著性,防止保護片38的不希望的部分黏貼於電路基板10或潤濕擴展(所謂的覆液(puddling))。另外,若保護片38的黏性高,則於壓製時有時黏貼於電路基板10而阻礙空氣排出(所謂的空氣夾雜)。但是,藉由黏著力滿足所述範圍的保護片38,可順利地進行空氣排出。By ensuring the adhesive strength meets the aforementioned range, the adhesiveness of the protective sheet 38 can be suppressed when it is disposed on the circuit substrate 10, preventing unwanted portions of the protective sheet 38 from adhering to the circuit substrate 10 or from wetting and spreading (so-called puddling). Additionally, if the protective sheet 38 has high adhesiveness, it may sometimes adhere to the circuit substrate 10 during pressing, hindering air expulsion (so-called air entrainment). However, with the protective sheet 38 having adhesive strength meeting the aforementioned range, air expulsion can proceed smoothly.
保護片38的第二面的利用探針黏性試驗所得的黏著力可為0.01 N/cm2以上,較佳為可為0.05 N/cm2以上,更佳為可為0.10 N/cm2以上。另外,第一面與第二面的黏著力之差可為0.05 N/cm2~0.40 N/cm2,較佳為可為0.05 N/cm2~0.30 N/cm2,更佳為可為0.10 N/cm2~0.20 N/cm2。藉由黏著力滿足所述範圍,充分地確保與第二面接觸並積層於保護片上的緩衝材與第二面的密接性,從而可有效率地進行壓製。緩衝材可以於加熱壓製時對保護片施加適當的壓力為目的而積層於保護片上。The adhesive force of the second side of the protective sheet 38, obtained by probe adhesion testing, can be 0.01 N/ cm² or higher, preferably 0.05 N/ cm² or higher, and more preferably 0.10 N/ cm² or higher. Furthermore, the difference in adhesive force between the first and second sides can be 0.05 N/ cm² to 0.40 N/ cm² , preferably 0.05 N/ cm² to 0.30 N/ cm² , and more preferably 0.10 N/ cm² to 0.20 N/ cm² . By satisfying the aforementioned range of adhesive force, the tightness of the cushioning material in contact with and deposited on the second side of the protective sheet is sufficiently ensured, thereby enabling efficient pressing. The cushioning material can be deposited on the protective sheet for the purpose of applying appropriate pressure during heat pressing.
另外,保護片38的由下述式1求出的指數X可為0.5~2.0,較佳為0.6~1.7,更佳為0.7~1.5。[式1]X=Ftotal/Ttotal此處,Ftotal為於將製成0.5 cm×1.0 cm的長方形的保護片38於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。Ttotal為保護片38的總厚度(μm),於圖2的保護片38的情況下,Ttotal與第一保護層32的厚度、第二保護層34及第三保護層36的厚度之和相等。於保護片38包含剝離層的情況下,總厚度不包含剝離層的厚度。Furthermore, the index X of the protective sheet 38, calculated by the following formula 1, can be 0.5 to 2.0, preferably 0.6 to 1.7, and more preferably 0.7 to 1.5. [Formula 1] X = F total / T total Here, F total is the average value (μm) of the flow length of the four sides of the most flowable portion when the protective sheet 38, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes. T total is the total thickness (μm) of the protective sheet 38. In the case of the protective sheet 38 in Figure 2, T total is equal to the sum of the thicknesses of the first protective layer 32, the second protective layer 34, and the third protective layer 36. When the protective sheet 38 includes a peeling layer, the total thickness does not include the thickness of the peeling layer.
圖3表示本實施方式的流動長的一例。以兩張聚醯亞胺膜夾住保護片38,切取成0.5 cm×1.0 cm的長方形的基準形。於將其維持於180℃的狀態下以1 MPa按壓5分鐘。此時,保護片38的一部分軟化而自聚醯亞胺膜之間流動,因此針對各邊測定最流動的部分距聚醯亞胺膜的長度。Figure 3 illustrates an example of the flow length in this embodiment. A 0.5 cm × 1.0 cm rectangular reference shape is cut by sandwiching the protective sheet 38 between two polyimide films. It is then pressed at 1 MPa for 5 minutes while maintaining a temperature of 180°C. During this time, a portion of the protective sheet 38 softens and flows between the polyimide films; therefore, the length of the most flowing portion from the polyimide film is measured for each side.
例如,如圖3所示,以自與壓製前的保護片38為相同形狀(基準形)的聚醯亞胺膜35的四邊伸出的方式產生流動。此處,於四邊的每一邊,沿著自聚醯亞胺膜35的各邊延伸成90度的直線測定距最流動的部分的邊的長度L1~長度L4。將以μm為單位表示四邊的流動長度L1~流動長度L4的平均值者作為流動長Ftotal(μm)。For example, as shown in Figure 3, flow is generated by extending from the four sides of a polyimide film 35 that has the same shape (reference shape) as the protective sheet 38 before pressing. Here, on each of the four sides, the lengths L1 to L4 from the side with the most flow are measured along a straight line extending 90 degrees from each side of the polyimide film 35. The average value of the flow lengths L1 to L4 on the four sides, expressed in μm, is taken as the flow length F total (μm).
於指數X包含於所述範圍內的情況下,於電路基板10及電子器件20等的周圍形成充分量的保護層30,從而可更可靠地對電子器件封裝100進行絕緣保護。另一方面,若指數X較所述範圍而言過大,則保護片38的熱壓接時的流動性過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。When the index X is within the aforementioned range, a sufficient amount of protective layer 30 is formed around the circuit substrate 10 and electronic device 20, thereby providing more reliable insulation protection for the electronic device package 100. On the other hand, if the index X is too large compared to the aforementioned range, the flowability of the protective sheet 38 during thermoforming is too high, resulting in insufficient thickness in a portion of the protective layer 30 (e.g., the corner of the electronic device 20).
若指數X較所述範圍而言更小,則保護片38的熱壓接時的流動性不足,電子器件20等無法被保護層30充分地絕緣保護,產生耐電壓性不足的風險。例如,有可能於電路基板10與電子器件20等相接的凹角部、連接構件24周邊、及/或具有複雜的形狀的電子器件20等的周圍(特別是凹部)無法充分地形成保護層30。If the index X is smaller than the range described above, the flowability of the protective sheet 38 during thermoforming will be insufficient, and the electronic device 20 and the like will not be adequately insulated and protected by the protective layer 30, resulting in a risk of insufficient voltage withstand capability. For example, the protective layer 30 may not be adequately formed at the concave corner where the circuit board 10 contacts the electronic device 20, around the connecting component 24, and/or around the electronic device 20 with a complex shape (especially the concave portion).
另外,保護片38的拉伸斷裂強度可為10 N/mm2~70 N/mm2,較佳為可為15 N/mm2~50 N/mm2,更佳為可為20 N/mm2~40 N/mm2。拉伸斷裂強度可依據日本工業標準(Japanese Industrial Standards,JIS)-C-2151:2019進行測定。例如,拉伸斷裂強度可藉由如下方式算出:使用拉伸試驗機於23℃且60%RH的環境下以一分鐘50 mm/分鐘的速度拉伸保護片38,並計算保護片38斷裂時的強度(拉伸載荷值/保護片38的剖面積)。Furthermore, the tensile breaking strength of the protective sheet 38 can be 10 N/ mm² to 70 N/ mm² , preferably 15 N/ mm² to 50 N/ mm² , and even more preferably 20 N/ mm² to 40 N/ mm² . The tensile breaking strength can be measured according to Japanese Industrial Standards (JIS)-C-2151:2019. For example, the tensile breaking strength can be calculated as follows: using a tensile testing machine, the protective sheet 38 is stretched at a speed of 50 mm/min at 23°C and 60%RH, and the strength at which the protective sheet 38 breaks is calculated (tensile load value / cross-sectional area of the protective sheet 38).
若拉伸斷裂強度過大,則保護片38的熱壓接時的流動性不足,產生電子器件20等無法被保護層30充分地絕緣保護的風險。若拉伸斷裂強度過小,則保護片38的熱壓接時的流動性過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。另一方面,於拉伸斷裂強度包含於所述範圍內的情況下,於電路基板10及電子器件20等的周圍形成充分量的保護層30,從而可更可靠地對電子器件封裝100進行絕緣保護。If the tensile breaking strength is too high, the flowability of the protective sheet 38 during heat pressing will be insufficient, creating a risk that the electronic device 20 and the like will not be adequately insulated and protected by the protective layer 30. If the tensile breaking strength is too low, the flowability of the protective sheet 38 during heat pressing will be too high, resulting in insufficient thickness in a part of the protective layer 30 (e.g., the corner of the electronic device 20). On the other hand, when the tensile breaking strength is within the aforementioned range, a sufficient amount of protective layer 30 is formed around the circuit board 10 and the electronic device 20, thereby providing more reliable insulation protection for the electronic device package 100.
保護片38的膜厚可為50 μm~500 μm,較佳為100 μm~250 μm。The thickness of the protective film 38 can be 50 μm to 500 μm, preferably 100 μm to 250 μm.
第一保護層32主要具有向保護片38賦予流動性的作用。第一保護層32的由下述式2求出的指數Z可為2.0~15.0,較佳為可為4.0~12.0,更佳為可為5.0~10.0。[式2]Z=F1/T1此處,F1為於將製成0.5 cm×1.0 cm的長方形的第一保護層32於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T1為第一保護層32的厚度(μm)。F1可藉由與Ftotal相同的方法進行測定。The first protective layer 32 primarily imparts fluidity to the protective sheet 38. The index Z of the first protective layer 32, calculated by Equation 2 below, can be 2.0 to 15.0, preferably 4.0 to 12.0, and even more preferably 5.0 to 10.0. [Equation 2] Z = F 1 / T 1 Here, F 1 is the average value (μm) of the flow length of the four sides of the most fluid portion when the first protective layer 32, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes. T 1 is the thickness (μm) of the first protective layer 32. F 1 can be measured by the same method as F total .
如上所述,指數Z取較指數X而言更大的數值範圍。藉此,第一保護層32於保護片38的熱壓接時流動良好而可進入至具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等中。As described above, the exponent Z takes a larger value range than the exponent X. In this way, the first protective layer 32 flows well during the thermoforming of the protective sheet 38 and can enter the surrounding area (especially the recess) of the electronic device 20 with a complex shape, the connecting component 24, and/or the gap between the circuit board 10 and the electronic device 20.
若指數Z較所述範圍而言過大,則流動性變得過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。另一方面,若指數Z較所述範圍而言更小,則保護片38的熱壓接時的流動性不足,產生電子器件20等無法被保護層30充分地絕緣保護的風險。另一方面,於指數Z包含於所述範圍內的情況下,於電路基板10及電子器件20等的周圍形成充分量的保護層30,從而可更可靠地對電子器件封裝100進行絕緣保護。If the index Z is too large compared to the stated range, the flowability becomes too high, resulting in insufficient thickness in parts of the protective layer 30 (e.g., corners of electronic devices 20, etc.). On the other hand, if the index Z is smaller than the stated range, the flowability of the protective sheet 38 during thermoforming is insufficient, creating a risk that electronic devices 20, etc., cannot be adequately insulated and protected by the protective layer 30. On the other hand, when the index Z is within the stated range, a sufficient amount of protective layer 30 is formed around the circuit board 10 and electronic devices 20, thereby providing more reliable insulation protection for the electronic device package 100.
第一保護層32的膜厚可為5 μm~150 μm,較佳為可為5 μm~50 μm,更佳為可為10 μm~30 μm。藉由第一保護層32的膜厚滿足所述範圍,可於抑制保護片38的黏著性的同時賦予適當的流動性。The thickness of the first protective layer 32 can be 5 μm to 150 μm, preferably 5 μm to 50 μm, and more preferably 10 μm to 30 μm. By ensuring that the thickness of the first protective layer 32 meets the above range, appropriate flowability can be provided while suppressing the adhesion of the protective sheet 38.
第一保護層32的玻璃轉移溫度可為80℃以下,較佳為可為60℃以下,進而佳為可為50℃以下。第一保護層32的玻璃轉移溫度可為20℃以上,較佳為可為30℃以上,進而佳為可為35℃以上。The glass transition temperature of the first protective layer 32 can be below 80°C, preferably below 60°C, and even more preferably below 50°C. The glass transition temperature of the first protective layer 32 can be above 20°C, preferably above 30°C, and even more preferably above 35°C.
第二保護層34主要具有於確保保護層30的厚度的同時防止由來自所接觸的導電層40的金屬離子引起的離子遷移的作用。第二保護層34的由下述式3求出的指數Y可為0.5~1.5,較佳為0.6~1.4,更佳為0.7~1.2。[式3]Y=F2/T2此處,F2為於將製成0.5 cm×1.0 cm的長方形的第二保護層34於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T2為第二保護層34的厚度(μm)。F2可藉由與Ftotal相同的方法進行測定。The second protective layer 34 primarily serves to ensure the thickness of the protective layer 30 while preventing ion migration caused by metal ions from the conductive layer 40 it contacts. The exponent Y of the second protective layer 34, calculated by Equation 3 below, can be 0.5 to 1.5, preferably 0.6 to 1.4, and more preferably 0.7 to 1.2. [Equation 3] Y = F 2 / T 2 Here, F 2 is the average value (μm) of the flow length of the four sides of the most fluid portion when the second protective layer 34, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes. T 2 is the thickness (μm) of the second protective layer 34. F 2 can be measured by the same method as F total .
如上所述,指數Y會達到所述範圍,於保護片38的熱壓接時,第二保護層34不會過於流動,牢固地殘存於電子器件20等的角部等保護層30的膜厚容易變薄的部分。藉此,可更可靠地對電子器件封裝100進行絕緣保護。另外,於導電層40形成於保護層30上的情況下,可充分地防止自導電層40的離子遷移。As described above, when the exponent Y reaches the specified range, the second protective layer 34 will not flow excessively during the thermoforming of the protective sheet 38, and will remain firmly in areas where the protective layer 30 is prone to thinning, such as the corners of the electronic device 20. This provides more reliable insulation protection for the electronic device package 100. Furthermore, when the conductive layer 40 is formed on the protective layer 30, ion migration from the self-conductive layer 40 can be sufficiently prevented.
若指數Y較所述範圍而言過大,則保護片38的熱壓接時的流動性過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。另一方面,若指數Y較所述範圍而言更小,則保護片38的熱壓接時的流動性不足,電子器件20等無法被保護層30充分地絕緣保護,或產生離子遷移的風險。If the index Y is too large compared to the stated range, the flowability of the protective sheet 38 during heat pressing will be too high, resulting in insufficient thickness in a portion of the protective layer 30 (e.g., at the corner of the electronic device 20, etc.). On the other hand, if the index Y is smaller than the stated range, the flowability of the protective sheet 38 during heat pressing will be insufficient, and the electronic device 20, etc., will not be adequately insulated and protected by the protective layer 30, or there will be a risk of ion migration.
第二保護層34的膜厚可為10 μm~200 μm,較佳為可為30 μm~150 μm,更佳為可為50 μm~100 μm。藉由第二保護層34的膜厚滿足所述條件,可於維持電子器件20等的散熱性的同時確保保護層30整體的膜厚。The thickness of the second protective layer 34 can be 10 μm to 200 μm, preferably 30 μm to 150 μm, and even more preferably 50 μm to 100 μm. By ensuring that the thickness of the second protective layer 34 meets the aforementioned conditions, the overall thickness of the protective layer 30 can be maintained while maintaining the heat dissipation of the electronic device 20, etc.
第二保護層34的膜厚可較第一保護層32而言更厚。於此情況下,可更可靠地消除於保護層30的一部分(例如,電子器件20等的角部)厚度不足的情況。另外,第一保護層32的膜厚可較第二保護層34而言更厚。於此情況下,可藉由保護層30更可靠地保護具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等。The second protective layer 34 may be thicker than the first protective layer 32. In this case, the insufficient thickness of a portion of the protective layer 30 (e.g., a corner of the electronic device 20) can be more reliably eliminated. Furthermore, the first protective layer 32 may be thicker than the second protective layer 34. In this case, the protective layer 30 can more reliably protect the periphery (especially recesses) of electronic devices 20 with complex shapes, the connecting components 24, and/or the gap between the circuit board 10 and the electronic device 20.
第二保護層34的玻璃轉移溫度可為60℃以下,較佳為可為50℃以下,進而佳為可為40℃以下。第二保護層34的玻璃轉移溫度可為0℃以上,較佳為可為10℃以上,進而佳為可為20℃以上。另外,第二保護層34的玻璃轉移溫度可較第一保護層32的玻璃轉移溫度而言更低。藉此,充分地確保於加熱壓製時和第二保護層34接觸的緩衝材與第二保護層34的密接性,從而可有效率地進行壓製。The glass transition temperature of the second protective layer 34 can be below 60°C, preferably below 50°C, and even more preferably below 40°C. The glass transition temperature of the second protective layer 34 can be above 0°C, preferably above 10°C, and even more preferably above 20°C. Furthermore, the glass transition temperature of the second protective layer 34 can be lower than that of the first protective layer 32. This ensures sufficient adhesion between the cushioning material in contact with the second protective layer 34 during heat pressing, thereby enabling efficient pressing.
第三保護層36主要具有於具有一定的流動性的同時確保保護層30的厚度的作用。第三保護層36的由下述式4求出的指數W可為1.0~3.0,較佳為可為1.2~2.7,更佳為可為1.5~2.5。[式4]W=F3/T3此處,F3為於將製成0.5 cm×1.0 cm的長方形的第三保護層36於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T3為第三保護層36的厚度(μm)。F3可藉由與Ftotal相同的方法進行測定。The third protective layer 36 primarily serves to ensure the thickness of the protective layer 30 while maintaining a certain degree of fluidity. The index W of the third protective layer 36, calculated by Equation 4 below, can be 1.0 to 3.0, preferably 1.2 to 2.7, and even more preferably 1.5 to 2.5. [Equation 4] W = F 3 / T 3 Here, F 3 is the average value (μm) of the flow length of the four sides of the most fluid portion when the third protective layer 36, which is made into a rectangle of 0.5 cm × 1.0 cm, is heated and pressed at 180°C and 1 MPa for 5 minutes. T 3 is the thickness (μm) of the third protective layer 36. F 3 can be measured using the same method as F total .
如上所述,指數W取指數Y與指數Z之間的數值範圍。藉此,於保護片38的熱壓接時,第三保護層36具有第一保護層32與第二保護層34之間的流動性,具有補充第一保護層32與第二保護層34所進行的包覆的效果。As described above, the exponent W takes a value between the exponents Y and Z. Therefore, during the heat pressing of the protective sheet 38, the third protective layer 36 has the fluidity between the first protective layer 32 and the second protective layer 34, thus supplementing the coating effect performed by the first protective layer 32 and the second protective layer 34.
第三保護層36的膜厚可為20 μm~200 μm,較佳為可為30 μm~150 μm,更佳為可為40 μm~80 μm。藉由第三保護層36的膜厚滿足所述條件,可起到如下效果:藉由保護層30保護具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等的效果、以及牢固地殘存於保護層30的膜厚容易變薄的部分的效果。The thickness of the third protective layer 36 can be 20 μm to 200 μm, preferably 30 μm to 150 μm, and even more preferably 40 μm to 80 μm. By satisfying the aforementioned conditions with the thickness of the third protective layer 36, the following effects can be achieved: the protective layer 30 protects the periphery (especially the recesses) of electronic devices 20 with complex shapes, the connecting components 24, and/or the gap between the circuit substrate 10 and the electronic devices 20, and firmly retains the protective layer 30 in areas where the film thickness is prone to thinning.
再者,第三保護層36可包含多個層。例如,第三保護層36可藉由將兩張相同的樹脂膜層壓而構成。Furthermore, the third protective layer 36 may comprise multiple layers. For example, the third protective layer 36 may be formed by laminating two identical resin films.
第三保護層36的膜厚可較第一保護層32而言更厚。於此情況下,可更可靠地消除於保護層30的一部分(例如,電子器件20等的角部)厚度不足的情況。另外,第一保護層32的膜厚可較第三保護層36而言更厚。於此情況下,可藉由保護層30更可靠地保護具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等。The third protective layer 36 may be thicker than the first protective layer 32. In this case, the situation where the thickness of a portion of the protective layer 30 is insufficient (e.g., the corner of the electronic device 20) can be eliminated more reliably. Alternatively, the first protective layer 32 may be thicker than the third protective layer 36. In this case, the protective layer 30 can more reliably protect the periphery (especially recesses) of electronic devices 20 with complex shapes, the connecting components 24, and/or the gap between the circuit board 10 and the electronic device 20.
第三保護層36的玻璃轉移溫度可為60℃以下,較佳為可為50℃以下,進而佳為可為40℃以下。第三保護層36的玻璃轉移溫度可為0℃以上,較佳為可為10℃以上,進而佳為可為20℃以上。另外,第三保護層36的玻璃轉移溫度可較第一保護層32的玻璃轉移溫度而言更低。藉此,第三保護層36的衝擊吸收性提高,從而可提高保護層30整體的衝擊吸收力。The glass transition temperature of the third protective layer 36 can be below 60°C, preferably below 50°C, and even more preferably below 40°C. The glass transition temperature of the third protective layer 36 can be above 0°C, preferably above 10°C, and even more preferably above 20°C. Furthermore, the glass transition temperature of the third protective layer 36 can be lower than that of the first protective layer 32. This improves the impact absorption capacity of the third protective layer 36, thereby enhancing the overall impact absorption capacity of the protective layer 30.
於高溫下,第二保護層34可具有較第一保護層32而言更硬的性質。例如,於120℃下,第二保護層34的楊氏模量可較第一保護層32的楊氏模量而言更高。例如,120℃下的第一保護層32的楊氏模量可為0.5~3,第二保護層34的楊氏模量可為3~7。第三保護層36的楊氏模量可處於第一保護層32與第二保護層34之間,例如於120℃下可為1.5~3.5。藉由第一保護層32~第三保護層36具有此種楊氏模量,於進行熱壓的高溫下,保護片38可發揮適當的流動性。At high temperatures, the second protective layer 34 can have a harder property than the first protective layer 32. For example, at 120°C, the Young's modulus of the second protective layer 34 can be higher than that of the first protective layer 32. For example, at 120°C, the Young's modulus of the first protective layer 32 can be 0.5 to 3, and the Young's modulus of the second protective layer 34 can be 3 to 7. The Young's modulus of the third protective layer 36 can be between that of the first protective layer 32 and the second protective layer 34, for example, it can be 1.5 to 3.5 at 120°C. By having such Young's moduli in the first protective layer 32 to the third protective layer 36, the protective sheet 38 can exhibit appropriate flowability at the high temperature of hot pressing.
第一保護層32、第二保護層34及第三保護層36可為熱硬化性樹脂。例如,第一保護層32、第二保護層34及第三保護層36可包含熱硬化性樹脂及硬化劑。The first protective layer 32, the second protective layer 34, and the third protective layer 36 may be thermosetting resins. For example, the first protective layer 32, the second protective layer 34, and the third protective layer 36 may comprise thermosetting resins and hardeners.
作為熱硬化性樹脂,可使用於一分子中具有一個以上的藉由加熱產生交聯反應的官能基的聚合物。作為官能基,例如可使用羥基、酚性羥基、甲氧基甲基、羧基、胺基、環氧基、氧雜環丁基、噁唑啉基、噁嗪基、氮丙啶基、硫醇基、異氰酸酯基、嵌段化異氰酸酯基、嵌段化羧基、及矽醇基等中的一種或多種。As a thermosetting resin, it can be used in polymers having one or more functional groups that undergo cross-linking reactions upon heating. Examples of functional groups include hydroxyl, phenolic hydroxyl, methoxymethyl, carboxyl, amino, epoxy, oxacyclobutyl, oxazolinyl, oxazinyl, aziridinyl, thiol, isocyanate, block isocyanate, block carboxyl, and silanol.
作為熱硬化性樹脂的一例,可使用聚胺基甲酸酯系樹脂、丙烯酸系樹脂、馬來酸系樹脂、聚丁二烯系樹脂、聚酯系樹脂、脲系樹脂、環氧系樹脂、氧雜環丁烷系樹脂、苯氧基系樹脂、聚醯亞胺系樹脂、聚醯胺系樹脂、聚醯胺醯亞胺系樹脂、酚系樹脂、甲酚系樹脂、三聚氰胺系樹脂、醇酸系樹脂、胺基系樹脂、聚乳酸系樹脂、噁唑啉系樹脂、苯並噁嗪系樹脂、矽酮系樹脂、及氟系樹脂等中的一種或多種。第一保護層32、第二保護層34及第三保護層36中的兩個或三個可使用相同的或同系的樹脂作為熱硬化性樹脂。As an example of a thermosetting resin, one or more of the following can be used: polyurethane resin, acrylic resin, maleic acid resin, polybutadiene resin, polyester resin, urea resin, epoxy resin, oxocyclobutane resin, phenoxy resin, polyimide resin, polyamide resin, polyamide-imide resin, phenol resin, cresol resin, melamine resin, alkyd resin, amino resin, polylactic acid resin, oxazoline resin, benzoxazine resin, silicone resin, and fluorine resin. Two or three of the first protective layer 32, the second protective layer 34, and the third protective layer 36 may use the same or similar resins as thermosetting resins.
作為硬化劑,可使用環氧系硬化劑、氮丙啶系硬化劑、酚系硬化劑、胺系硬化劑、異氰酸酯系硬化劑及金屬螯合物系硬化劑等中的一種或多種。再者,氮丙啶系硬化劑可為包含具有氮丙啶基的化合物的硬化劑,酚系硬化劑可為包含具有羥基直接鍵結於芳香族基(芳香環)的結構的化合物的硬化劑,胺系硬化劑可為包含具有胺基的化合物的硬化劑,異氰酸酯系硬化劑可為包含含有異氰酸酯基的化合物的硬化劑。金屬螯合物系硬化劑可為包含多牙配位體(螯合物配位體)與金屬離子配位而產生的錯合物的硬化劑。第一保護層32、第二保護層34及第三保護層36中的兩個或三個可使用相同的或同系的硬化劑。As a curing agent, one or more of the following can be used: epoxy-based curing agents, aziridine-based curing agents, phenolic curing agents, amine-based curing agents, isocyanate-based curing agents, and metal chelate-based curing agents. Furthermore, aziridine-based curing agents can be curing agents containing compounds having an aziridine group; phenolic curing agents can be curing agents containing compounds having a hydroxyl group directly bonded to an aromatic group (aromatic ring); amine-based curing agents can be curing agents containing compounds having an amino group; and isocyanate-based curing agents can be curing agents containing compounds containing an isocyanate group. Metal chelate-based curing agents can be curing agents containing complexes formed by the coordination of a polydentate ligand (chelate ligand) with a metal ion. Two or three of the first protective layer 32, the second protective layer 34, and the third protective layer 36 may use the same or similar hardener.
環氧系硬化劑可為環氧化合物。環氧化合物是於一分子中具有兩個以上的環氧基的化合物。作為環氧化合物的性狀,液狀及固形形狀均可。作為環氧化合物,例如可為縮水甘油醚型環氧化合物、縮水甘油胺型環氧化合物、縮水甘油酯型環氧化合物、環狀脂肪族(脂環型)環氧化合物等。Epoxy-based curing agents can be epoxy compounds. Epoxy compounds are compounds having two or more epoxy groups per molecule. Epoxy compounds can be in liquid or solid form. Examples of epoxy compounds include glycidyl ether type epoxy compounds, glycidyl amine type epoxy compounds, glycidyl ester type epoxy compounds, and cyclic aliphatic (lipocyclic) epoxy compounds.
作為縮水甘油醚型環氧化合物,例如可為選自雙酚A型環氧化合物、雙酚F型環氧化合物、雙酚S型環氧化合物、雙酚AD型環氧化合物、甲酚酚醛清漆型環氧化合物、苯酚酚醛清漆型環氧化合物、α-萘酚酚醛清漆型環氧化合物、雙酚A型酚醛清漆型環氧化合物、二環戊二烯型環氧化合物、四溴雙酚A型環氧化合物、溴化苯酚酚醛清漆型環氧化合物、三(縮水甘油氧基苯基)甲烷、四(縮水甘油氧基苯基)乙烷等中的一個或多個者。As a glycidyl ether type epoxide, it may be, for example, one or more selected from bisphenol A type epoxide, bisphenol F type epoxide, bisphenol S type epoxide, bisphenol AD type epoxide, cresol phenolic varnish type epoxide, phenol phenolic varnish type epoxide, α-naphthol phenolic varnish type epoxide, bisphenol A type phenolic varnish type epoxide, dicyclopentadiene type epoxide, tetrabromobisphenol A type epoxide, brominated phenol phenolic varnish type epoxide, tris(glycidyloxyphenyl)methane, tetra(glycidyloxyphenyl)ethane, etc.
作為縮水甘油胺型環氧化合物,例如可列舉:四縮水甘油基二胺基二苯基甲烷、三縮水甘油基對胺基苯酚、三縮水甘油基間胺基苯酚、四縮水甘油基間二甲苯二胺等。Examples of glycidylamine type epoxides include tetraglycidyldiaminodiphenylmethane, triglycidylp-aminophenol, triglycidylm-aminophenol, and tetraglycidylm-xylyldimethylamine.
作為縮水甘油酯型環氧化合物,例如可列舉:鄰苯二甲酸二縮水甘油酯、六氫鄰苯二甲酸二縮水甘油酯、四氫鄰苯二甲酸二縮水甘油酯等。Examples of glycidyl ester-type epoxides include: diglyceride phthalate, hexahydrodiglyceride phthalate, tetrahydrodiglyceride phthalate, etc.
作為環狀脂肪族(脂環型)環氧化合物,例如可列舉環氧環己基甲基-環氧環己烷羧酸酯、雙(環氧環己基)己二酸酯等。另外,亦可使用液狀的環氧化合物。Examples of cyclic aliphatic (lipocyclic) epoxy compounds include epoxide cyclohexylmethyl-epoxide cyclohexane carboxylate and bis(epoxide cyclohexyl) adipate. Liquid epoxy compounds can also be used.
氮丙啶系硬化劑可為氮丙啶化合物。作為氮丙啶化合物,例如可為選自N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶羰基化物)、N,N'-甲苯-2,4-雙(1-氮丙啶羰基化物)、雙異鄰苯二甲醯基-1-(2-甲基氮丙啶)、三-1-氮丙啶基氧化膦、N,N'-六亞甲基-1,6-雙(1-氮丙啶羰基化物)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、三-2,4,6-(1-氮丙啶基)-1,3,5-三嗪、三羥甲基丙烷三[3-(1-氮丙啶基)丙酸酯]、三羥甲基丙烷三[3-(1-氮丙啶基)丁酸酯]、三羥甲基丙烷三[3-(1-(2-甲基)氮丙啶基)丙酸酯]、三羥甲基丙烷三[3-(1-氮丙啶基)-2-甲基丙酸酯]、2,2'-雙羥基甲基丁醇三[3-(1-氮丙啶基)丙酸酯]、季戊四醇四[3-(1-氮丙啶基)丙酸酯]、二苯基甲烷-4,4-雙-N,N'-伸乙基脲、1,6-六亞甲基雙-N,N'-伸乙基脲、2,4,6-(三伸乙基亞胺基)-均三嗪、雙[1-(2-乙基)氮丙啶基]苯-1,3-羧酸醯胺等中的一個或多個者。Aziridine-based hardeners can be aziridine compounds. Examples of aziridine compounds include, for instance, N,N'-diphenylmethane-4,4'-bis(1-aziridine carbonyl), N,N'-toluene-2,4-bis(1-aziridine carbonyl), bis(isophthalic acid)-1-(2-methylaziridine), tri-1-aziridine phosphine oxide, N,N'-hexamethylene-1,6-bis(1-aziridine carbonyl), trihydroxymethylpropane-tri-β-aziridine propionate, tetrahydroxymethylmethane-tri-β-aziridine propionate, tri-2,4,6-(1-aziridine)-1,3,5-triazine, trihydroxymethylpropane tris[3-(1-aziridine)propionate], and trihydroxymethylpropane. One or more of the following: alkyltris[3-(1-aziridinyl)butyrate], trihydroxymethylpropanetris[3-(1-(2-methyl)aziridinyl)propionate], trihydroxymethylpropanetris[3-(1-aziridinyl)-2-methylpropionate], 2,2'-bis(hydroxymethyl)butanoltris[3-(1-aziridinyl)propionate], pentaerythritol tetra[3-(1-aziridinyl)propionate], diphenylmethane-4,4-bis-N,N'-epoxyethylurea, 1,6-hexamethylenebis-N,N'-epoxyethylurea, 2,4,6-(triepoxyethylimino)-triazine, bis[1-(2-ethyl)aziridinyl]benzene-1,3-carboxylic acid amide.
酚系硬化劑可為酚化合物。例如,酚化合物可為於一分子中具有兩個以上的酚性羥基的酚樹脂,例如可選自雙酚A型酚樹脂、雙酚F型酚樹脂、苯酚芳烷基型酚樹脂、二環戊二烯型酚樹脂、三苯基甲烷型酚樹脂、酚醛清漆型酚樹脂、二甲苯型酚樹脂、聯苯型酚樹脂中的一個或多個。Phenolic hardeners can be phenolic compounds. For example, a phenolic compound can be a phenolic resin having two or more phenolic hydroxyl groups in one molecule, such as one or more of bisphenol A type phenolic resin, bisphenol F type phenolic resin, phenol aralkyl type phenolic resin, dicyclopentadiene type phenolic resin, triphenylmethane type phenolic resin, phenolic varnish type phenolic resin, xylene type phenolic resin, and biphenyl type phenolic resin.
胺系硬化劑可為胺化合物。胺化合物可為具有兩個以上的胺基的化合物,可為二聚二胺或其他多胺。Amine-based curing agents can be amine compounds. Amine compounds can be compounds with two or more amine groups, and can be diamines or other polyamines.
異氰酸酯系硬化劑可為異氰酸酯化合物。異氰酸酯化合物可為選自芳香族聚異氰酸酯、脂肪族聚異氰酸酯、脂環式聚異氰酸酯中的一個或多個者。Isocyanate-based hardeners can be isocyanate compounds. Isocyanate compounds can be one or more selected from aromatic polyisocyanates, aliphatic polyisocyanates, and cycloaliphatic polyisocyanates.
作為芳香族聚異氰酸酯,例如可列舉:1,3-苯二異氰酸酯、1,4-苯二異氰酸酯、2,4-甲苯二異氰酸酯(甲苯二異氰酸酯(toluene diisocyanate,TDI))、2,6-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯(二苯基甲烷二異氰酸酯(methylene diphenyl diisocyanate,MDI))、2,4-二苯基甲烷二異氰酸酯、4,4'-二異氰酸基聯苯、3,3'-二甲基-4,4'-二異氰酸基聯苯、3,3'-二甲基-4,4'-二異氰酸基二苯基甲烷、1,5-萘二異氰酸酯、4,4',4''-三苯基甲烷三異氰酸酯、間異氰酸基苯基磺醯基異氰酸酯、對異氰酸基苯基磺醯基異氰酸酯等。Examples of aromatic polyisocyanates include: 1,3-phenylene diisocyanate, 1,4-phenylene diisocyanate, 2,4-toluene diisocyanate (toluene diisocyanate, TDI), 2,6-toluene diisocyanate, and 4,4'-diphenylmethane diisocyanate (methylene diphenyl) diisocyanate (MDI), 2,4-diphenylmethane diisocyanate, 4,4'-diisocyanobiphenyl, 3,3'-dimethyl-4,4'-diisocyanobiphenyl, 3,3'-dimethyl-4,4'-diisocyanodiphenylmethane, 1,5-naphthalene diisocyanate, 4,4',4''-triphenylmethane triisocyanate, m-isocyanophenylsulfonyl isocyanate, p-isocyanophenylsulfonyl isocyanate, etc.
作為脂肪族聚異氰酸酯,例如可列舉:伸乙基二異氰酸酯、四亞甲基二異氰酸酯、六亞甲基二異氰酸酯(hexamethylene diisocyanate,HDI)、十二亞甲基二異氰酸酯、1,6,11-十一烷三異氰酸酯、2,2,4-三甲基六亞甲基二異氰酸酯、離胺酸二異氰酸酯、2,6-二異氰酸基己酸甲酯、雙(2-異氰酸基乙基)富馬酸酯、雙(2-異氰酸基乙基)碳酸酯、2-異氰酸基乙基-2,6-二異氰酸基己酸酯等。Examples of aliphatic polyisocyanates include: ethyl diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate (HDI), dodecamethylene diisocyanate, 1,6,11-undecane triisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, lysine diisocyanate, methyl 2,6-diisocyanatohexanoate, bis(2-isocyanatoethyl) fumarate, bis(2-isocyanatoethyl) carbonate, 2-isocyanatoethyl-2,6-diisocyanatohexanoate, etc.
作為脂環式聚異氰酸酯,例如可列舉:異佛爾酮二異氰酸酯(isophorone diisocyanate,IPDI)、4,4'-二環己基甲烷二異氰酸酯(H12-MDI)、伸環己基二異氰酸酯、甲基伸環己基二異氰酸酯(氫化TDI)、雙(2-異氰酸基乙基)-4-環己烯-1,2-二羧酸酯、2,5-降冰片烷二異氰酸酯、2,6-降冰片烷二異氰酸酯等。Examples of alicyclic polyisocyanates include: isophorone diisocyanate (IPDI), 4,4'-dicyclohexylmethane diisocyanate (H12-MDI), cyclohexyl diisocyanate, methylcyclohexyl diisocyanate (hydrogenated TDI), bis(2-isocyanoethyl)-4-cyclohexene-1,2-dicarboxylic acid ester, 2,5-norbornane diisocyanate, 2,6-norbornane diisocyanate, etc.
另外,可列舉二異氰酸酯的三羥甲基丙烷加成體、與水反應的縮二脲體、具有異氰脲酸酯環的三聚體。In addition, examples include trimethylolpropane adducts of diisocyanates, biuret esters that react with water, and trimers having an isocyanurate ring.
作為嵌段化異氰酸酯化合物,只要為含所述異氰酸酯基的化合物中的異氰酸酯基被ε-己內醯胺或甲基乙基酮(methyl ethyl ketone,MEK)肟等保護的含嵌段化異氰酸酯基的化合物即可,並無特別限定。具體而言,可列舉藉由ε-己內醯胺、MEK肟、環己酮肟、吡唑、苯酚等對含所述異氰酸酯基的化合物的異氰酸酯基進行嵌段而成者等。特別是具有異氰脲酸酯環、經MEK肟或吡唑嵌段的六亞甲基二異氰酸酯三聚體於用於本實施方式的情況下,保存穩定性自不必說,對聚醯亞胺或銅等接合材的接著強度或焊料耐熱性優異,因此非常較佳。As a block-type isocyanate compound, any compound containing a block-type isocyanate group in which the isocyanate group is protected by ε-caprolactam or methyl ethyl ketone (MEK) oxime is acceptable, and there is no particular limitation. Specifically, examples include compounds formed by blocking the isocyanate group of a compound containing the isocyanate group with ε-caprolactam, MEK oxime, cyclohexanone oxime, pyrazole, phenol, etc. In particular, hexamethylene diisocyanate trimers with isocyanurate rings, MEK oxime, or pyrazole blocks are highly preferred when used in this embodiment, as they not only maintain stability but also exhibit excellent bonding strength or solder heat resistance to bonding materials such as polyimide or copper.
金屬螯合物系硬化劑可選自鋁螯合物化合物、鈦螯合物化合物、鋯螯合物化合物中的一個或多個。中心金屬可選自鐵、鈷、銦等。The metal chelate hardener can be selected from one or more aluminum chelate compounds, titanium chelate compounds, and zirconium chelate compounds. The central metal can be selected from iron, cobalt, indium, etc.
硬化劑相對於熱硬化性樹脂100重量份而可使用1重量份~50重量份、較佳為10重量份~40重量份、更佳為20重量份~30重量份。The hardener can be used in the form of 1 to 50 parts by weight, preferably 10 to 40 parts by weight, and more preferably 20 to 30 parts by weight, relative to 100 parts by weight of the thermosetting resin.
藉由調整硬化劑的量,可調整第一保護層32、第二保護層34及第三保護層36的流動性及黏性。例如,可為第二保護層34的硬化劑的含量最多,第三保護層36的硬化劑的含量次多,第一保護層32完全不包含硬化劑或以第三保護層36以下的量含有硬化劑。By adjusting the amount of hardener, the flowability and viscosity of the first protective layer 32, the second protective layer 34, and the third protective layer 36 can be adjusted. For example, the second protective layer 34 may have the highest content of hardener, the third protective layer 36 may have the second highest content of hardener, and the first protective layer 32 may contain no hardener at all or contain hardener in an amount less than that of the third protective layer 36.
第一保護層32、第二保護層34及第三保護層36可更包含填料。填料較佳為絕緣性,例如,可選自無機填料、磷系填料、氮系填料、氟系填料及高分子填料。作為填料,可使用一種或多種。The first protective layer 32, the second protective layer 34, and the third protective layer 36 may further comprise packing material. The packing material is preferably insulating, and may be selected from inorganic packing materials, phosphorus-based packing materials, nitrogen-based packing materials, fluorine-based packing materials, and polymeric packing materials. One or more types of packing materials may be used.
作為無機填料,可列舉:二氧化矽、中空二氧化矽、多孔質二氧化矽、雲母、滑石、高嶺土、黏土、水滑石、矽灰石、硬矽鈣石、氮化矽、氮化硼、氮化鋁、磷酸氫鈣、磷酸鈣、玻璃片、水合玻璃、鈦酸鈣、海泡石、硫酸鎂、氫氧化鋁、氫氧化鎂、氫氧化鋯、氫氧化鋇、氫氧化鈣、氧化鈦、氧化錫、氧化鋁、氧化鎂、氧化鋯、氧化鋅、氧化鉬、氧化銻、氧化鎳、碳酸鋅、碳酸鎂、碳酸鈣、碳酸鋇、硼酸鋅、硼酸鋁、無機離子補充劑(作為例子,東亞合成公司製造的IXE(註冊商標))。Inorganic fillers that can be used include: silica, hollow silica, porous silica, mica, talc, kaolin, clay, hydrotalcite, wollastonite, anhydrite, silicon nitride, boron nitride, aluminum nitride, calcium hydrogen phosphate, calcium phosphate, glass slides, hydrated glass, calcium titanate, sepiolite, magnesium sulfate, aluminum hydroxide, and magnesium hydroxide. Zirconia, barium hydroxide, calcium hydroxide, titanium oxide, tin oxide, aluminum oxide, magnesium oxide, zirconium oxide, zinc oxide, molybdenum oxide, antimony oxide, nickel oxide, zinc carbonate, magnesium carbonate, calcium carbonate, barium carbonate, zinc borate, aluminum borate, inorganic ion supplements (for example, IXE (registered trademark) manufactured by Toa Synthetic Co., Ltd.).
作為磷系填料,可列舉:磷酸三聚氰胺、聚磷酸三聚氰胺、磷酸胍、聚磷酸胍、磷酸銨、聚磷酸銨、磷酸醯胺銨、聚磷酸醯胺銨、磷酸胺甲酸酯、聚磷酸胺甲酸酯等(聚)磷酸鹽系化合物、有機磷酸酯化合物、磷腈化合物、膦酸化合物、二乙基次膦酸鋁、甲基乙基次膦酸鋁、二苯基次膦酸鋁、乙基丁基次膦酸鋁、甲基丁基次膦酸鋁、聚乙烯次膦酸鋁等次膦酸化合物、氧化膦化合物、磷烷化合物、磷醯胺化合物等。As phosphorus-based fillers, examples include: melamine phosphate, polymelamine phosphate, guanidine phosphate, polyguanidine phosphate, ammonium phosphate, polyammonium phosphate, ammonium phosphate, ammonium polyphosphate, ammonium polyphosphate, carbamate phosphate, carbamate phosphate, etc. (poly)phosphate compounds, organophosphate compounds, phosphazene compounds, phosphonic acid compounds, aluminum diethylphosphonate, aluminum methylethylphosphonate, aluminum diphenylphosphonate, aluminum ethylbutylphosphonate, aluminum methylbutylphosphonate, aluminum polyvinylphosphonate, etc., phosphine oxide compounds, phosphine compounds, phosphatidine compounds, phosphatamine compounds, etc.
作為氮系填料,可列舉:苯並胍胺、三聚氰胺、蜜白胺、蜜勒胺、三聚二氰乙腈、三聚氰胺氰脲酸酯、氰脲酸化合物、異氰脲酸化合物、三唑系化合物、四唑化合物、重氮化合物、脲等氮系填料。As nitrogen-based fillers, examples include: benzoguanidine, melamine, melamine, melamine, cyanoacetonitrile, melamine cyanurate, cyanuric acid compounds, isocyanuric acid compounds, triazole compounds, tetraazole compounds, diazo compounds, urea, and other nitrogen-based fillers.
作為氟系填料,可列舉:聚四氟乙烯粉末或其改質物、四氟乙烯-全氟烷基乙烯基醚粉末、四氟乙烯-乙烯粉末、四氟乙烯-六氟丙烯粉末、四氟乙烯-偏二氟乙烯粉末、四氟乙烯-六氟丙烯-全氟烷基乙烯基醚粉末、聚氯三氟乙烯粉末、氯三氟乙烯-乙烯粉末、氯三氟乙烯-偏二氟乙烯粉末、聚偏二氟乙烯粉末、聚氟乙烯粉末等。Fluorine-based fillers include: polytetrafluoroethylene powder or its modified forms, tetrafluoroethylene-perfluoroalkyl vinyl ether powder, tetrafluoroethylene-ethylene powder, tetrafluoroethylene-hexafluoropropylene powder, tetrafluoroethylene-vinylidene fluoride powder, tetrafluoroethylene-hexafluoropropylene-perfluoroalkyl vinyl ether powder, polychlorotrifluoroethylene powder, chlorotrifluoroethylene-ethylene powder, chlorotrifluoroethylene-vinylidene fluoride powder, polyvinylidene fluoride powder, and polyvinyl fluoride powder.
作為高分子填料,除了可列舉聚乙烯粉末、聚丙烯酸酯粉末、環氧樹脂粉末、聚醯胺粉末、聚醯亞胺粉末、聚胺基甲酸酯粉末、液晶聚合物珠、聚矽氧烷粉末等以外,亦可列舉使用矽酮、丙烯酸、苯乙烯丁二烯橡膠、丁二烯橡膠等的多層結構的核殼等。As polymer fillers, in addition to polyethylene powder, polyacrylate powder, epoxy resin powder, polyamide powder, polyimide powder, polyurethane powder, liquid crystal polymer beads, polysiloxane powder, etc., multilayer core-shell structures using silicone, acrylic acid, styrene-butadiene rubber, butadiene rubber, etc. can also be listed.
填料的平均粒徑D50可為0.01 μm~100 μm,較佳為可為0.02 μm~40 μm,更佳為可為0.05 μm~20 μm。The average particle size D50 of the filler can be 0.01 μm to 100 μm, preferably 0.02 μm to 40 μm, and even more preferably 0.05 μm to 20 μm.
第二保護層34及第三保護層36可包含0.1重量%~30重量%、較佳為1重量%~25重量%、更佳為5重量%~20重量%的填料。藉由使填料為所述範圍,可將指數X、指數Y及/或指數Z(流動性)調整為接近適當的範圍。The second protective layer 34 and the third protective layer 36 may contain 0.1 wt% to 30 wt%, preferably 1 wt% to 25 wt%, and more preferably 5 wt% to 20 wt% of filler. By using filler within the aforementioned range, the index X, index Y, and/or index Z (flowability) can be adjusted to a near-appropriate range.
第一保護層32可不包含填料、或者即使包含填料,亦可以較第二保護層34及第三保護層36而言更少的質量濃度包含填料。例如,於第一保護層32包含填料的情況下,相對於熱硬化性樹脂100重量份,可包含0.01重量份~1重量份,較佳為可包含0.01重量份~0.5重量份,更佳為可包含0.01重量份~0.1重量份。The first protective layer 32 may not contain filler, or even if it does contain filler, it may contain filler at a lower mass concentration than the second protective layer 34 and the third protective layer 36. For example, if the first protective layer 32 contains filler, it may contain 0.01 to 1 part by weight of the thermosetting resin, preferably 0.01 to 0.5 parts by weight, and more preferably 0.01 to 0.1 parts by weight.
作為一例,可為第二保護層34的填料的含量最多,第三保護層36的填料的含量次多,第一保護層32完全不包含填料或以第三保護層36以下的質量濃度包含填料。As an example, the second protective layer 34 may have the highest filler content, the third protective layer 36 may have the second highest filler content, and the first protective layer 32 may contain no filler at all or contain filler at a mass concentration lower than that of the third protective layer 36.
其結果,雖然保護片38包含填料,但是保護片38的第二面側的填料的質量濃度較第一面側而言更大。藉此,可抑制第一保護層32(即第一面側)的黏性(黏著性),亦增大流動性。另外,藉由調整第一保護層32的填料量及/或硬化劑量,可將保護片38的第一面的利用探針黏性試驗所得的黏著力調整為規定值以下。另外,藉由調整填料量及/或硬化劑量,容易將流動性調整為第一保護層32、第三保護層36及第二保護層34的順序。As a result, although the protective sheet 38 contains filler, the mass concentration of the filler on the second side of the protective sheet 38 is greater than that on the first side. This suppresses the stickiness (adhesion) of the first protective layer 32 (i.e., the first side) and increases flowability. Furthermore, by adjusting the filler amount and/or the amount of hardener in the first protective layer 32, the adhesive force obtained from the probe adhesion test on the first side of the protective sheet 38 can be adjusted to below a specified value. Additionally, by adjusting the filler amount and/or the amount of hardener, the flowability can be easily adjusted to the order of the first protective layer 32, the third protective layer 36, and the second protective layer 34.
另外,作為另一例,可為第二保護層34及第三保護層36以同量包含填料,第一保護層32完全不包含填料或以第二保護層34及第三保護層36以下的質量濃度包含填料。代替該些,可為第三保護層36的填料的含量最多,第二保護層34的填料的含量次多,第一保護層32完全不包含填料或以第三保護層36以下的質量濃度包含填料。Alternatively, as another example, the second protective layer 34 and the third protective layer 36 may contain the same amount of filler, while the first protective layer 32 may contain no filler at all or contain filler at a concentration lower than that of the second and third protective layers 34 and 36. Instead, the third protective layer 36 may have the highest filler content, the second protective layer 34 may have the second highest filler content, and the first protective layer 32 may contain no filler at all or contain filler at a concentration lower than that of the third protective layer 36.
於將保護片38整體設為100重量%的情況下,填料的含量可為0.1重量%~30.0重量%,較佳為可為1.0重量%~9.8重量%,更佳為可為3.5重量%~8.5重量%。若保護片38整體的填料量較該範圍而言更低,則流動性變得過高,若保護片38整體的填料量較該範圍而言更高,則於冷熱循環執行時保護層上產生裂紋,可能成為外觀不良的原因。於保護片38整體中,填料的含量只不過是追加的改良事項,而非必需事項。With the protective sheet 38 as a whole, 100% by weight, the filler content can be 0.1% by weight to 30.0% by weight, preferably 1.0% by weight to 9.8% by weight, and more preferably 3.5% by weight to 8.5% by weight. If the filler content of the protective sheet 38 is lower than this range, the flowability becomes too high; if the filler content of the protective sheet 38 is higher than this range, cracks may occur on the protective layer during thermal cycling, potentially causing poor appearance. The filler content in the protective sheet 38 is merely an additional improvement, not a necessary one.
第一保護層32、第二保護層34及第三保護層36亦可更包含熱塑性樹脂。作為熱塑性樹脂,較佳為例如自聚酯、丙烯酸系樹脂、聚醚、胺基甲酸酯系樹脂、苯乙烯彈性體、聚碳酸酯、丁二烯橡膠、聚醯胺、酯醯胺系樹脂、聚異戊二烯、及纖維素中選擇一種以上。於包含熱塑性樹脂的情況下,較佳為於第一保護層32、第二保護層34及/或第三保護層36的各層中設為5重量%~40重量%的含量。The first protective layer 32, the second protective layer 34, and the third protective layer 36 may further comprise thermoplastic resins. Preferably, the thermoplastic resin is selected from one or more of, for example, polyester, acrylic resins, polyether, carbamate resins, styrene elastomers, polycarbonate, butadiene rubber, polyamide, esteramide resins, polyisoprene, and cellulose. When thermoplastic resins are included, it is preferable that the content of each layer of the first protective layer 32, the second protective layer 34, and/or the third protective layer 36 is set at 5% to 40% by weight.
第一保護層32、第二保護層34及第三保護層36中可更包含添加劑。例如,作為添加劑,可使用著色劑(例如顏料、染料、或碳黑、碳奈米管、石墨烯、富勒烯等碳粉末)、阻燃劑、抗黏連劑、金屬鈍化劑、增稠劑、分散劑、矽烷偶合劑、防鏽劑、銅毒抑制劑(copper inhibitor)、還原劑、抗氧化劑、黏著賦予樹脂、塑化劑、紫外線吸收劑、消泡劑、及調平調整劑等中的一種或多種。The first protective layer 32, the second protective layer 34, and the third protective layer 36 may further include additives. For example, as additives, one or more of the following can be used: colorants (such as pigments, dyes, or carbon black, carbon nanotubes, graphene, fullerene, etc.), flame retardants, anti-blocking agents, metal passivators, thickeners, dispersants, silane coupling agents, rust inhibitors, copper inhibitors, reducing agents, antioxidants, adhesive resins, plasticizers, ultraviolet absorbers, defoamers, and leveling agents.
圖4表示本實施方式的保護片38的另一例。如圖4所示,保護片38可僅包含第一保護層32及第二保護層34,可不包含第三保護層36。於此情況下,第一保護層32及第二保護層34的結構及材料等可如所述中說明般。Figure 4 shows another example of the protective sheet 38 of this embodiment. As shown in Figure 4, the protective sheet 38 may only include the first protective layer 32 and the second protective layer 34, and may not include the third protective layer 36. In this case, the structure and materials of the first protective layer 32 and the second protective layer 34 may be as described in the description.
作為另一例,第一保護層32、第二保護層34及第三保護層36中的一個或多個亦可設置多層。例如,保護片38亦可具有一個第一保護層32、一個第二保護層34、以及被該些夾持的多個第三保護層36。As another example, one or more of the first protective layer 32, the second protective layer 34, and the third protective layer 36 may also be provided in multiple layers. For example, the protective sheet 38 may also have a first protective layer 32, a second protective layer 34, and multiple third protective layers 36 sandwiched between them.
保護片38亦可視需要包含其他層。例如,保護片38亦可更具有於貼附於電路基板10後剝離的剝離層等。於設置剝離層的情況下,可設置於第二保護層34的更靠上側(第一保護層32的相反側)處。The protective sheet 38 may also include other layers as needed. For example, the protective sheet 38 may also have a release layer that can be peeled off after being attached to the circuit board 10. If a release layer is provided, it may be provided on the upper side of the second protective layer 34 (opposite to the first protective layer 32).
圖5表示本實施方式的電子器件封裝100的製造方法的流程的一例。電子器件封裝100可藉由執行S100~S300中的至少一部分來製造。為了便於說明,依序說明S100~S300,但該些處理亦可按照其他順序執行、及/或至少一部分亦可並行執行。Figure 5 illustrates an example of the manufacturing process of the electronic device package 100 according to this embodiment. The electronic device package 100 can be manufactured by performing at least some of S100 to S300. For ease of explanation, S100 to S300 are described sequentially, but these processes can also be performed in other order, and/or at least some can be performed in parallel.
於S100中,製造用於形成保護層30的保護片38。保護片38可為於圖2~圖4中說明的保護片。In step S100, a protective sheet 38 for forming the protective layer 30 is manufactured. The protective sheet 38 may be the protective sheet illustrated in Figures 2 to 4.
保護片38的製造方法並無特別限定,例如可列舉如下方法等:對將形成保護片38的各層(第一保護層32、第二保護層34、第三保護層36)的所述熱硬化性樹脂等材料溶解於溶媒等中而得的組成物依次進行塗佈、乾燥,形成積層結構、或將預先硬化或半硬化的該組成物層壓。作為塗佈方法,例如可列舉:凹版塗佈方式、吻合式塗佈方式、模塗方式、唇塗方式、缺角輪塗佈方式、刮板方式、輥塗方式、刮刀塗佈方式、噴霧塗佈方式、棒塗方式、旋轉塗佈方式、浸塗方式、或各種印刷方式等。The manufacturing method of the protective sheet 38 is not particularly limited. For example, the following methods can be used: the composition obtained by dissolving the thermosetting resin or other material that forms each layer (first protective layer 32, second protective layer 34, third protective layer 36) of the protective sheet 38 in a solvent or the like is sequentially coated and dried to form a laminated structure, or the pre-cured or semi-cured composition is laminated. Examples of coating methods include: gravure coating, matching coating, stencil coating, lip coating, corner wheel coating, squeegee coating, roller coating, squeegee coating, spray coating, stick coating, rotary coating, dip coating, and various printing methods.
接下來,於S200中,於安裝基板12上形成由保護片38形成的保護層30。例如,首先準備安裝基板12。安裝基板12可為於表面設置有導電電路的電路基板10上安裝電子器件20等者。於安裝基板12,以第一保護層32(第一面側)朝向電子器件20等側的方式配置S100中製造的保護片38。Next, in S200, a protective layer 30 formed by the protective sheet 38 is formed on the mounting substrate 12. For example, the mounting substrate 12 is prepared first. The mounting substrate 12 may be a circuit substrate 10 on which electronic devices 20 are mounted. On the mounting substrate 12, the protective sheet 38 manufactured in S100 is arranged such that the first protective layer 32 (first side) faces the side of the electronic device 20.
圖6表示圖5的流程中的S200的一例。如圖示般,可於以第一保護層32側與電子器件20等面對面的方式配置保護片38的基礎上,將保護片38黏貼於安裝基板12。Figure 6 shows an example of S200 in the process of Figure 5. As shown, the protective sheet 38 can be attached to the mounting substrate 12 with the protective sheet 38 arranged face-to-face with the electronic device 20 on the side of the first protective layer 32.
亦可於配置保護片38後將其熱壓於安裝基板12。藉由熱壓,可將保護片38的各保護層的未硬化或半硬化的熱硬化性樹脂硬化。此處,於熱硬化性樹脂完全硬化的情況下,保護片38成為保護層30。於保護片38具有剝離片的情況下,可於熱壓之後將剝離片自保護片38去除。Alternatively, the protective sheet 38 can be hot-pressed onto the mounting substrate 12 after placement. Hot pressing can cure the uncured or semi-cured thermosetting resins of each protective layer of the protective sheet 38. Here, when the thermosetting resin is completely cured, the protective sheet 38 becomes the protective layer 30. If the protective sheet 38 has a peelable sheet, the peelable sheet can be removed from the protective sheet 38 after hot pressing.
熱壓可於減壓下或真空下進行。藉此,可提高第一保護層32對安裝基板12的密接度。熱壓可於100℃~220℃、較佳為120℃~200℃、更佳為140℃~180℃下,以1分鐘~120分鐘、較佳為1分鐘~40分鐘、更佳為1分鐘~10分鐘且0.1 MPa~10 MPa、較佳為0.5 MPa~3 MPa、更佳為1 MPa~2 MPa的條件進行。於進行追加的加熱的情況下,可於與所述熱壓相同的溫度條件等下進行。Hot pressing can be performed under reduced pressure or vacuum. This improves the adhesion between the first protective layer 32 and the mounting substrate 12. Hot pressing can be performed at 100°C to 220°C, preferably 120°C to 200°C, more preferably 140°C to 180°C, for 1 minute to 120 minutes, preferably 1 minute to 40 minutes, more preferably 1 minute to 10 minutes, and at a pressure of 0.1 MPa to 10 MPa, preferably 0.5 MPa to 3 MPa, more preferably 1 MPa to 2 MPa. In the case of additional heating, it can be performed under the same temperature conditions as the hot pressing.
若進行熱壓,則構成保護片38的各層於完全硬化之前軟化,而流動至電路基板10與電子器件20等的角的凹部或凸塊等連接構件24的側面。特別是,流動性較其他層而言更高的第一保護層32充分地保護流動至該些部位而不易形成保護層30的部分。藉此,可防止連接構件24與其他導電體的接觸或漏電。If hot pressing is performed, the layers constituting the protective sheet 38 soften before fully hardening and flow to the sides of the connecting components 24, such as the recesses or protrusions at the corners of the circuit board 10 and the electronic devices 20. In particular, the first protective layer 32, which has higher fluidity than the other layers, adequately protects the portions of the material flowing to these areas from forming the protective layer 30. This prevents contact or leakage between the connecting components 24 and other conductors.
另一方面,流動性比較低的第二保護層34及第三保護層36即使藉由熱壓亦不會大幅移動,因此於電子器件20等整體上殘存一定量。藉此,可更可靠地消除於保護層30的一部分(例如,電子器件20等的角部)厚度不足的情況。On the other hand, the second protective layer 34 and the third protective layer 36, which have lower fluidity, do not move significantly even by hot pressing, thus leaving a certain amount on the entire electronic device 20. In this way, the situation where the thickness of a part of the protective layer 30 (e.g., the corner of the electronic device 20) is insufficient can be eliminated more reliably.
圖7表示形成有保護層30的安裝基板12的一例。如所說明般,藉由將保護片38硬化,形成保護層30,對安裝基板12的整個表面進行絕緣保護。Figure 7 shows an example of a mounting substrate 12 with a protective layer 30 formed. As explained, the protective layer 30 is formed by hardening the protective sheet 38, thus insulating the entire surface of the mounting substrate 12.
再者,於所述說明中,列舉使用不包含剝離片的保護片38的例子,但並不限於此。例如,可使用於第二保護層34側具有剝離片的保護片38進行熱壓,於熱壓後將剝離片剝離。Furthermore, the description provides examples of using a protective sheet 38 that does not contain a peeling sheet, but it is not limited to this. For example, a protective sheet 38 with peeling sheets on the side of the second protective layer 34 can be hot-pressed, and the peeling sheets can be peeled off after hot pressing.
接下來,於S300中,於保護層30上形成導電層40。導電層40可形成於形成有保護層30的區域的一部分或整體。導電層40可藉由將金屬自含金屬片46轉印至安裝基板12來形成。Next, in S300, a conductive layer 40 is formed on the protective layer 30. The conductive layer 40 may be formed in part or in whole of the area where the protective layer 30 is formed. The conductive layer 40 may be formed by transferring metal from the metal sheet 46 to the mounting substrate 12.
圖8表示含金屬片46的一例。含金屬片46於剝離片42上形成有金屬材料層44。Figure 8 shows an example of a metal sheet 46. The metal sheet 46 has a metal material layer 44 formed on the peeling sheet 42.
剝離片42可使用之後能夠剝離的膜狀的剝離基材或具有緩衝性的剝離樹脂。剝離片42可包括剝離基材及/或剝離樹脂的單層或多層。The peeling sheet 42 may be a film-like peeling substrate that can be peeled off later or a cushioning peeling resin. The peeling sheet 42 may include a single layer or multiple layers of peeling substrate and/or peeling resin.
剝離基材是對單面或兩面賦予了脫模性的膜狀的基材。剝離基材理想的是150℃下的拉伸斷裂應變未滿50%的片。作為剝離基材,例如可列舉選擇聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚氟乙烯、聚偏二氟乙烯、硬質聚氯乙烯、聚偏二氯乙烯、尼龍、聚醯亞胺、聚苯乙烯、聚乙烯基醇、乙烯-乙烯基醇共聚物、聚碳酸酯、聚丙烯腈、聚丁烯、軟質聚氯乙烯、聚偏二氟乙烯、聚乙烯、聚丙烯、聚胺基甲酸酯樹脂、乙烯乙酸乙烯基酯共聚物、聚乙酸乙烯基酯等塑膠片等、玻璃紙、道林紙、牛皮紙、塗料紙等紙類、各種不織布、合成紙、金屬箔、或者該些組合而成的複合膜中的一種或多種者。A release substrate is a film-like substrate that has been given release properties on one or both sides. Ideally, a release substrate is a sheet with a tensile fracture strain of less than 50% at 150°C. As a peeling substrate, examples include polyethylene terephthalate, polyethylene naphthalate, polyvinyl fluoride, polyvinylidene fluoride, rigid polyvinyl chloride, polyvinylidene chloride, nylon, polyimide, polystyrene, polyvinyl alcohol, ethylene-vinyl alcohol copolymer, polycarbonate, polyacrylonitrile, polybutene, soft polyvinyl chloride, polyvinylidene fluoride, polyethylene, polypropylene, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl acetate and other plastic sheets, cellophane, paper, kraft paper, coated paper and other papers, various non-woven fabrics, synthetic paper, metal foil, or composite films composed of these.
剝離樹脂是具有對電子器件20等的形狀的追隨性、亦具有脫模性的樹脂。即,剝離樹脂是脫模性緩衝構件於熱壓等之後能夠剝離的樹脂。剝離樹脂理想的是150℃下的拉伸斷裂應變為50%以上。另外,剝離樹脂較佳為於熱壓時進行熔融。The peel resin is a resin that can conform to the shape of electronic devices 20 and also has mold release properties. That is, the peel resin is a resin that allows the mold release cushioning component to be peeled off after hot pressing, etc. Ideally, the peel resin has a tensile breaking strain of 50% or more at 150°C. Furthermore, it is preferable that the peel resin is melted during hot pressing.
作為剝離樹脂,例如可列舉選擇聚乙烯、聚丙烯、聚醚碸、聚苯硫醚、聚苯乙烯、聚甲基戊烯、聚對苯二甲酸丁二酯、環狀烯烴聚合物、及矽酮中的一種或多種者。就兼顧埋入性與剝離性的觀點而言,特佳為聚丙烯、聚甲基戊烯、聚對苯二甲酸丁二酯、矽酮。As a peelable resin, one or more of the following can be selected: polyethylene, polypropylene, polyethersulfone, polyphenylene sulfide, polystyrene, polymethylpentene, polybutylene terephthalate, cyclic olefin polymers, and silicone. From the viewpoint of balancing embeddability and peelability, polypropylene, polymethylpentene, polybutylene terephthalate, and silicone are particularly preferred.
金屬材料層44可由包含熱硬化性樹脂及導電填料的導電膏形成。例如,可藉由在剝離片42上塗佈導電膏及將溶劑加以乾燥來形成金屬材料層44。導電膏中的熱硬化性樹脂較佳為未硬化或半硬化狀態。作為塗佈方法,可列舉所述各保護層的組成物的塗佈方法或網版印刷等方法。The metal material layer 44 can be formed from a conductive paste comprising a thermosetting resin and a conductive filler. For example, the metal material layer 44 can be formed by applying the conductive paste to the peel 42 and drying the solvent. The thermosetting resin in the conductive paste is preferably in an uncured or semi-cured state. As a coating method, methods for coating the components of the aforementioned protective layers or methods such as screen printing can be listed.
作為熱硬化性樹脂,可使用與第一保護層~第三保護層的形成中使用的樹脂相同的樹脂。As a thermosetting resin, the same resin used in the formation of the first to third protective layers can be used.
作為導電填料,可列舉:金屬粒子、碳粒子、導電性樹脂粒子等。導電填料可包含金屬粒子作為必需成分,除此以外亦可選擇一種或多種碳粒子等其他成分而包含。As conductive fillers, examples include: metal particles, carbon particles, and conductive resin particles. Conductive fillers may contain metal particles as an essential component, and may also include one or more other components such as carbon particles.
作為金屬粒子,例如可列舉:金、鉑、銀、銅、鎳、鋁、鐵或該些的合金等,但就價格與導電性的方面而言,較佳為銅。另外,作為金屬粒子,可為包括包含金屬的核體、與包覆該核體且包含與核體不同的金屬的包覆層的粒子。作為核體及包覆層,可使用所述列舉的金屬。作為一例,可列舉具有包含銅的核體與包含銀的包覆層的銀塗佈銅粒子等。Examples of metal particles include gold, platinum, silver, copper, nickel, aluminum, iron, or alloys thereof, but copper is preferred in terms of price and conductivity. Furthermore, the metal particles can be particles comprising a metal-containing core and a coating layer covering the core and containing a metal different from the core. The metals listed above can be used as the core and coating layer. For example, silver-coated copper particles having a copper-containing core and a silver-containing coating layer can be cited.
作為碳粒子,例如可列舉選擇乙炔黑、科琴黑、爐黑、碳奈米管、碳奈米纖維、石墨、富勒烯、碳奈米壁、及石墨烯等中的一種或多種者。作為導電性樹脂粒子,例如可列舉選擇聚(3,4-乙烯二氧噻吩)、聚乙炔、及聚噻吩等中的一種或多種者。As carbon particles, examples include one or more of acetylene black, Ketjen black, furnace black, carbon nanotubes, carbon nanofibers, graphite, fullerene, carbon nanowalls, and graphene. As conductive resin particles, examples include one or more of poly(3,4-ethylenedioxythiophene), polyacetylene, and polythiophene.
導電填料的平均粒徑D50較佳為1 μm~100 μm左右,更佳為3 μm~75 μm左右,進而佳為5 μm~50 μm左右。導電填料的平均粒徑可藉由雷射繞射法或散射法等來測定,例如假定與該填料粒子集合體的投影面積相等的圓時的直徑的平均值可作為平均粒徑來獲得。藉由將導電填料的平均粒徑設為所述範圍,可進一步提高之後形成的導電層40的電磁波屏蔽效果。另外,例如由於與熱硬化性樹脂混合時的流動性良好,因此導電層40的成形性提高。The average particle size D50 of the conductive filler is preferably about 1 μm to 100 μm, more preferably about 3 μm to 75 μm, and even more preferably about 5 μm to 50 μm. The average particle size of the conductive filler can be determined by laser diffraction or scattering methods, for example, the average diameter of a circle whose projected area is equal to that of the filler particle aggregate can be used as the average particle size. By setting the average particle size of the conductive filler within the aforementioned range, the electromagnetic wave shielding effect of the subsequently formed conductive layer 40 can be further improved. In addition, for example, the good flowability when mixed with thermosetting resin improves the formability of the conductive layer 40.
導電填料的形狀可為球狀、針狀、鱗片狀、片狀、樹枝狀、葡萄粒狀、纖維狀、或板狀等任意形狀。金屬材料層44中的導電填料的含量並無特別限定,相對於熱硬化性樹脂100重量份,較佳為100重量份~1500重量份,更佳為100重量份~1000重量份。藉此,與導電性粒子的種類無關,可對導電層40賦予必要且充分的導電性,且可充分提高電磁波屏蔽效果。另外,就提高包含熱硬化性樹脂與導電填料的組成物的流動性、更容易形成金屬材料層44而言亦較佳。The conductive filler can be any shape, such as spherical, needle-like, scale-like, plate-like, branch-like, grape-like, fibrous, or plate-like. The content of the conductive filler in the metal layer 44 is not particularly limited, but is preferably 100 to 1500 parts by weight relative to 100 parts by weight of the thermosetting resin, and more preferably 100 to 1000 parts by weight. This allows the conductive layer 40 to be endowed with necessary and sufficient conductivity, regardless of the type of conductive particles, and significantly improves the electromagnetic wave shielding effect. Furthermore, it is also preferable to improve the flowability of the composition containing the thermosetting resin and the conductive filler, making it easier to form the metal layer 44.
金屬材料層44可更包含熱塑性樹脂。作為熱塑性樹脂,可使用與能夠於第一保護層~第三保護層中使用的樹脂相同的樹脂。The metal layer 44 may further comprise a thermoplastic resin. The same thermoplastic resin that can be used in the first to third protective layers may be used.
金屬材料層44可包含其他添加劑。例如,作為添加劑,可使用交聯劑、著色劑、阻燃劑、填充劑、潤滑劑、抗黏連劑、金屬鈍化劑、增稠劑、分散劑、矽烷偶合劑、防鏽劑、銅毒抑制劑、還原劑、抗氧化劑、黏著賦予樹脂、塑化劑、紫外線吸收劑、消泡劑、及調平調整劑等中的一種或多種。The metal layer 44 may contain other additives. For example, one or more of the following additives may be used: crosslinking agents, colorants, flame retardants, fillers, lubricants, anti-blocking agents, metal passivators, thickeners, dispersants, silane coupling agents, rust inhibitors, copper toxicity inhibitors, reducing agents, antioxidants, adhesive resins, plasticizers, ultraviolet absorbers, defoamers, and leveling agents.
作為交聯劑,可列舉與熱硬化性樹脂的官能基發生交聯反應的化合物。例如,作為交聯劑,可使用酚系硬化劑、胺系硬化劑、異氰酸酯系硬化劑、環氧系硬化劑、氮丙啶系硬化劑、及金屬螯合物系硬化劑等中的一種或多種。As crosslinking agents, compounds that undergo crosslinking reactions with the functional groups of thermosetting resins can be listed. For example, one or more of the following can be used as crosslinking agents: phenolic curing agents, amine curing agents, isocyanate curing agents, epoxy curing agents, aziridine curing agents, and metal chelate curing agents.
作為著色劑,例如可使用有機顏料、碳黑、群青、紅鐵氧化物、氧化鋅、氧化鈦、石墨、及染料等中的一種或多種。作為阻燃劑,例如可使用含鹵素阻燃劑、含磷阻燃劑、含氮阻燃劑、及無機阻燃劑等中的一種或多種。作為填充劑,例如可使用玻璃纖維、二氧化矽、滑石、及陶瓷等中的一種或多種。As a colorant, one or more of the following can be used: organic pigments, carbon black, ultramarine, red iron oxide, zinc oxide, titanium oxide, graphite, and dyes. As a flame retardant, one or more of the following can be used: halogenated flame retardants, phosphorus-containing flame retardants, nitrogen-containing flame retardants, and inorganic flame retardants. As a filler, one or more of the following can be used: glass fiber, silica, talc, and ceramics.
作為潤滑劑,例如可使用脂肪酸酯、烴樹脂、石蠟、高級脂肪酸、脂肪酸醯胺、脂肪族醇、金屬皂、及改質矽酮等中的一種或多種。作為抗黏連劑,例如可使用碳酸鈣、二氧化矽、聚甲基矽倍半氧烷、及矽酸鋁鹽等中的一種或多種。As a lubricant, one or more of the following can be used: fatty acid esters, hydrocarbon resins, paraffin, higher fatty acids, fatty acid amides, aliphatic alcohols, metal soaps, and modified silicones. As an anti-blocking agent, one or more of the following can be used: calcium carbonate, silicon dioxide, polymethylsilsesquioxane, and aluminum silicates.
再者,金屬材料層44可為金屬箔。於此情況下,金屬箔可為藉由鍍敷等將與導電填料中例示的金屬相同的金屬形成在剝離片42上而成者。Furthermore, the metal material layer 44 can be a metal foil. In this case, the metal foil can be formed on the peel sheet 42 by plating or the like, with the same metal as the metal exemplified in the conductive filler.
圖9表示使用了含金屬片46的S300的一例。如圖示般,將含金屬片46的金屬材料層44側配置並貼附於保護層30。接下來,藉由對含金屬片46進行熱壓,使金屬材料層44的熱硬化性樹脂硬化,藉此形成導電層40。之後,去除剝離片42。藉此,製造如圖1所示的電子器件封裝100。Figure 9 shows an example of S300 using a metal sheet 46. As shown, the metal material layer 44 containing the metal sheet 46 is disposed and attached to the protective layer 30. Next, the thermosetting resin of the metal material layer 44 is cured by hot pressing the metal sheet 46, thereby forming a conductive layer 40. Afterward, the peeling sheet 42 is removed. In this way, the electronic device package 100 shown in Figure 1 is manufactured.
熱壓可於減壓下或真空下進行。藉此,可提高金屬材料層44對安裝基板12的密接度。熱壓可於100℃~220℃(較佳為120℃~180℃)下,以1分鐘~120分鐘(較佳為1分鐘~60分鐘)、0.1 MPa~10 MPa(較佳為0.5 MPa~3 MPa)的條件進行。Hot pressing can be performed under reduced pressure or vacuum. This improves the adhesion between the metal material layer 44 and the mounting substrate 12. Hot pressing can be performed at 100°C to 220°C (preferably 120°C to 180°C) for 1 minute to 120 minutes (preferably 1 minute to 60 minutes) and at 0.1 MPa to 10 MPa (preferably 0.5 MPa to 3 MPa).
再者,於S300中,可不使用含金屬片46而藉由其他方法形成導電層40。例如,導電層40可藉由利用鍍敷、蒸鍍、或濺鍍(以下,亦稱為「鍍敷等」)堆積金屬來形成。作為用於鍍敷等的金屬,例如可列舉金、鉑、銀、銅、鎳、鋁、鐵或該些的合金。作為另一例,導電層40可將導電膏(例如,能夠於金屬材料層44中使用者)塗敷或噴霧塗佈於保護層30或(熱壓前的)第二保護層34上,將其硬化而形成。Furthermore, in S300, the conductive layer 40 can be formed by other methods instead of using the metal sheet 46. For example, the conductive layer 40 can be formed by depositing metal using plating, vapor deposition, or sputtering (hereinafter also referred to as "plating, etc."). Examples of metals used for plating, etc., include gold, platinum, silver, copper, nickel, aluminum, iron, or alloys thereof. As another example, the conductive layer 40 can be formed by applying or spraying conductive paste (e.g., applicable to the metal material layer 44) onto the protective layer 30 or the second protective layer 34 (before hot pressing) and then hardening it.
於S300之後,視需要可進行將電子器件封裝100單片化的步驟。例如,可於與產品區域對應的位置將電子器件封裝100於X方向及Y方向上進行切割,獲得單獨的產品。另外,不執行S300,可使用不具有導電層40者作為電子器件封裝100。Following S300, the electronic device package 100 can be monolithically processed as needed. For example, the electronic device package 100 can be cut in the X and Y directions at locations corresponding to the product area to obtain individual products. Alternatively, without performing S300, an electronic device package 100 without the conductive layer 40 can be used.
如所述般,藉由本實施方式,利用S100~S300的製程,使用具有規定的結構、物性的保護片38,於安裝基板12上形成保護層30。藉此,於電子器件20等的角部等保護層30過度流動而膜厚容易變薄的部分或保護層30無法充分地流動的部分均可以充分的膜厚形成保護層30。另外,藉由本實施方式,亦可防止當貼合保護片38時第一面側接著於電路基板10等而覆液。As described above, in this embodiment, a protective layer 30 is formed on the mounting substrate 12 using a protective sheet 38 with a specified structure and physical properties through processes S100 to S300. This ensures that the protective layer 30 is formed to a sufficient thickness in areas such as corners of electronic devices 20 where excessive flow could lead to thinning of the film, or in areas where sufficient flow is not possible. Furthermore, this embodiment also prevents liquid from pooling on the first side of the protective sheet 38 when it is attached to the circuit substrate 10.
保護層30中可包含源自保護片38的層結構。例如,於保護片38為三層結構的情況下,保護層30的至少一部分可具有源自第一保護層32~第三保護層36各者的三層結構。特別是,於電路基板10與電子器件20等相接的角凹部中,保護層30的膜厚變厚,保護片38的層結構容易殘存。另一方面,於保護層30的膜厚變薄的電子器件20等的角部,亦可不殘存保護片38的層結構。The protective layer 30 may include a layer structure derived from the protective sheet 38. For example, if the protective sheet 38 has a three-layer structure, at least a portion of the protective layer 30 may have a three-layer structure derived from each of the first protective layer 32 to the third protective layer 36. In particular, in the corner recesses where the circuit substrate 10 contacts the electronic device 20, the film thickness of the protective layer 30 increases, and the layer structure of the protective sheet 38 is easily retained. On the other hand, in the corners of the electronic device 20, where the film thickness of the protective layer 30 decreases, the layer structure of the protective sheet 38 may not be retained.
以下,藉由實施例對本實施方式的例子進行說明。The following examples illustrate this embodiment.
[實施例][第一保護層用組成物A1]製備具有以下的組成的第一保護層32用的組成物A1。聚胺基甲酸酯樹脂(酸價:5 mgKOH/g,重量平均分子量:54,000,Tg:-7℃,東洋化工(TOYO CHEM)製造) 100重量份環氧化合物(日鐵化學&材料(NIPPON STEEL Chemical & Material)公司製造 YDF-2005RD) 20重量份溶媒(甲基乙基酮) 20重量份[Example] [Composition A1 for First Protective Layer] Composition A1 for preparing a first protective layer 32 having the following composition: Polyurethane resin (acid value: 5 mgKOH/g, weight average molecular weight: 54,000, Tg: -7℃, manufactured by Toyo Chemical Co., Ltd.) 100 parts by weight of epoxy compound (manufactured by Nippon Steel Chemical & Material Co., Ltd. YDF-2005RD) 20 parts by weight of solvent (methyl ethyl ketone) 20 parts by weight
[第一保護層用組成物A2]除了追加6重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)以外,製備具有與組成物A1相同的組成的第一保護層32用的組成物A2。[Composition A2 for First Protective Layer] Except for adding 6 parts by weight of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs), composition A2 for a first protective layer 32 having the same composition as composition A1 is prepared.
[第一保護層用組成物A3]除了追加12重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)以外,製備具有與組成物A1相同的組成的第一保護層32用的組成物A3。[Composition A3 for First Protective Layer] Except for adding 12 parts by weight of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs), composition A3 for a first protective layer 32 having the same composition as composition A1 is prepared.
[第一保護層用組成物A4]除了追加15重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)以外,製備具有與組成物A1相同的組成的第一保護層32用的組成物A4。[Composition A4 for First Protective Layer] Except for adding 15 parts by weight of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs), composition A4 for a first protective layer 32 having the same composition as composition A1 is prepared.
[第一保護層用組成物A5]除了追加55重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)以外,製備具有與組成物A1相同的組成的第一保護層32用的組成物A5。[Composition A5 for First Protective Layer] Except for adding 55 parts by weight of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs), composition A5 for a first protective layer 32 having the same composition as composition A1 is prepared.
[第一保護層用組成物A6]除了追加1.5重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)以外,製備具有與組成物A1相同的組成的第一保護層32用的組成物A6。[Composition A6 for First Protective Layer] Except for adding 1.5 parts by weight of silicon dioxide (SO-C6 manufactured by Admatechs, D 50 ; 2.0 μm), composition A6 for a first protective layer 32 having the same composition as composition A1 is prepared.
[第一保護層用組成物A7]除了追加20重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)以外,製備具有與組成物A1相同的組成的第一保護層32用的組成物A7。[Composition A7 for First Protective Layer] Except for adding 20 parts by weight of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs), composition A7 for a first protective layer 32 having the same composition as composition A1 is prepared.
[第二保護層用組成物B1]製備具有以下組成的第二保護層34用的組成物B1。聚胺基甲酸酯樹脂(酸價:5 mgKOH/g,重量平均分子量:54,000,Tg:-7℃,東洋化工(TOYO CHEM)製造) 100重量份環氧化合物(日鐵化學&材料(NIPPON STEEL Chemical & Material)公司製造 YDF-2001) 20重量份二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm) 13.6重量份(以除去溶媒後的固體成分計為10重量%)溶媒(甲基乙基酮) 20重量份[Component B1 for Second Protective Layer] Component B1 is prepared for use in the preparation of a second protective layer 34 having the following composition: Polyurethane resin (acid value: 5 mgKOH/g, weight average molecular weight: 54,000, Tg: -7℃, manufactured by TOYO CHEM) 100 parts by weight of epoxy compound (YDF-2001 manufactured by NIPPON STEEL Chemical & Material Co., Ltd.) 20 parts by weight of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs Co., Ltd.) 13.6 parts by weight (10% by weight of solids after removing solvent) of solvent (methyl ethyl ketone) 20 parts by weight
[第二保護層用組成物B2]除了將二氧化矽變更為滑石(富士滑石公司製造 FH104 D50;4.0 μm)24.4重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B2。[Composition B2 for the second protective layer] except that 24.4 parts by weight of silicon dioxide is replaced with talc (FH104 D 50 ; 4.0 μm manufactured by Fuji Talc Co., Ltd.), composition B2 is prepared to have the same composition as composition B1 for the second protective layer 34.
[第二保護層用組成物B3]除了將二氧化矽的含量變更為35.0重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B3。[Composition B3 for Second Protective Layer] Composition B3 is used to prepare a second protective layer 34 having the same composition as composition B1, except that the content of silicon dioxide is changed to 35.0 parts by weight.
[第二保護層用組成物B4]除了完全不追加二氧化矽以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B4。[Composition B4 for Second Protective Layer] Composition B4 is used to prepare a second protective layer 34 having the same composition as composition B1, except that no silicon dioxide is added at all.
[第二保護層用組成物B5]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為0.10重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B5。[Composition B5 for Second Protective Layer] Composition B5 for a second protective layer 34 having the same composition as composition B1 is prepared except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs) is changed to 0.10 parts by weight.
[第二保護層用組成物B6]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為0.15重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B6。[Composition B6 for Second Protective Layer] Composition B6 for a second protective layer 34 having the same composition as composition B1 is prepared except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm, manufactured by Admatechs) is changed to 0.15 parts by weight.
[第二保護層用組成物B7]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為55重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B7。[Composition B7 for Second Protective Layer] Composition B7 for a second protective layer 34 having the same composition as composition B1 is prepared except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs) is changed to 55 parts by weight.
[第二保護層用組成物B8]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為20重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B8。[Composition B8 for Second Protective Layer] Composition B8 for a second protective layer 34 having the same composition as composition B1 is prepared except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs) is changed to 20 parts by weight.
[第二保護層用組成物B9]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為15重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B9。[Composition B9 for Second Protective Layer] Composition B9 for a second protective layer 34 having the same composition as composition B1 is prepared except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs) is changed to 15 parts by weight.
[第二保護層用組成物B10]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為1.5重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B10。[Composition B10 for Second Protective Layer] Composition B10 for a second protective layer 34 having the same composition as composition B1 is prepared except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs) is changed to 1.5 parts by weight.
[第三保護層用組成物C1]製備具有以下組成的第三保護層36用的組成物C1。聚胺基甲酸酯樹脂(酸價:5 mgKOH/g,重量平均分子量:54,000,Tg:-7℃,東洋化工(TOYO CHEM)製造) 100重量份環氧化合物(日鐵化學&材料(NIPPON STEEL Chemical & Material)公司製造 YDF-170) 20重量份二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm) 13.6重量份溶媒(甲基乙基酮) 20重量份[第三保護層用組成物C2]除了完全不追加二氧化矽以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C2。[第三保護層用組成物C3]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為1.5重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C3。[第三保護層用組成物C4]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為20重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C4。[第三保護層用組成物C5]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為15重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C5。[第三保護層用組成物C6]除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D50;2.0 μm)的含量變更為55重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C6。[Composition C1 for Third Protective Layer] Composition C1 for the preparation of a third protective layer 36 having the following composition: Polyurethane resin (acid value: 5 mgKOH/g, weight average molecular weight: 54,000, Tg: -7℃, manufactured by TOYO CHEM) 100 parts by weight of epoxy compound (YDF-170 manufactured by NIPPON STEEL Chemical & Material Co., Ltd.) 20 parts by weight of silica (SO-C6, D 50 ; 2.0 μm manufactured by Admatechs Co., Ltd.) 13.6 parts by weight of solvent (methyl ethyl ketone) 20 parts by weight of [Composition C2 for Third Protective Layer] Composition C2 for the preparation of a third protective layer 36 having the same composition as composition C1, except that silica is not added at all. [Composition C3 for Third Protective Layer] Composition C3 for a third protective layer 36 is prepared, except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm, manufactured by Admatechs) is changed to 1.5 parts by weight. [Composition C4 for Third Protective Layer] Composition C4 for a third protective layer 36 is prepared, except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm, manufactured by Admatechs) is changed to 20 parts by weight. [Composition C5 for Third Protective Layer] Composition C5 for a third protective layer 36 is prepared, except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm, manufactured by Admatechs) is changed to 15 parts by weight. [Composition C6 for Third Protective Layer] Composition C6 for a third protective layer 36 is prepared, except that the content of silicon dioxide (SO-C6, D 50 ; 2.0 μm, manufactured by Admatechs) is changed to 55 parts by weight.
[單層A1的製造]將組成物A1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚15 μm的與第一保護層32對應的單層A1。[Fabrication of monolayer A1] Composition A1 is coated onto a peeling sheet. Subsequently, it is heated at 120°C for 5 minutes to dry and semi-cur it, forming a monolayer A1 with a film thickness of 15 μm corresponding to the first protective layer 32.
[單層B1的製造]將組成物B1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚45 μm的與第二保護層34對應的單層B1。[Preparation of monolayer B1] Composition B1 was coated onto a peel sheet. Subsequently, it was heated at 120°C for 5 minutes to dry and semi-cured, forming a monolayer B1 with a film thickness of 45 μm corresponding to the second protective layer 34.
[單層C1的製造]將組成物C1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚60 μm的與第三保護層36對應的單層C1。[Fabrication of monolayer C1] The composition C1 was coated onto a peel sheet. Subsequently, it was heated at 120°C for 5 minutes to dry and semi-cured, forming a monolayer C1 with a film thickness of 60 μm corresponding to the third protective layer 36.
[保護片H1的製造]將組成物A1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚15 μm的第一保護層32。於第一保護層32上塗佈組成物C1。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚60 μm的第三保護層36。其後,將組成物B1塗佈於第三保護層36上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚45 μm的第二保護層34。如此,形成包含第一保護層32、第三保護層36及第二保護層34的保護片H1。[Manufacturing of Protective Sheet H1] Composition A1 is coated onto a peeling sheet. Then, it is heated at 120°C for 5 minutes to dry and semi-cur, forming a first protective layer 32 with a film thickness of 15 μm. Composition C1 is coated onto the first protective layer 32. Then, it is heated at 120°C for 5 minutes to dry and semi-cur, forming a third protective layer 36 with a film thickness of 60 μm. Then, composition B1 is coated onto the third protective layer 36. Then, it is heated at 120°C for 5 minutes to dry and semi-cur, forming a second protective layer 34 with a film thickness of 45 μm. Thus, a protective sheet H1 comprising the first protective layer 32, the third protective layer 36, and the second protective layer 34 is formed.
[保護片H2的製造]除了使用組成物B2代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H2。[Manufacturing of Protective Sheet H2] Except that component B2 is used instead of component B1, protective sheet H2 is manufactured using the same method as protective sheet H1.
[保護片H3的製造]除了使用組成物B3代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H3。[Manufacturing of Protective Sheet H3] Except that component B3 is used instead of component B1, protective sheet H3 is manufactured using the same method as protective sheet H1.
[保護片H4的製造]除了使用組成物B4代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H4。[Manufacturing of Protective Sheet H4] Except that component B4 is used instead of component B1, protective sheet H4 is manufactured using the same method as protective sheet H1.
[保護片H5的製造]除了使用組成物B5代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H5。[Manufacturing of Protective Sheet H5] Except that component B5 is used instead of component B1, protective sheet H5 is manufactured using the same method as protective sheet H1.
[保護片H6的製造]除了使用組成物B6代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H6。[Manufacturing of Protective Sheet H6] Except that component B6 is used instead of component B1, protective sheet H6 is manufactured using the same method as protective sheet H1.
[保護片H7的製造]除了使用組成物A5代替組成物A1、使用組成物B7代替組成物B1、使用組成物C6代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H7。[Manufacturing of Protective Sheet H7] Except for using component A5 instead of component A1, component B7 instead of component B1, and component C6 instead of component C1, protective sheet H7 is manufactured using the same method as protective sheet H1.
[保護片H8的製造]除了使用組成物A2代替組成物A1以外,藉由與保護片H1相同的方法製造保護片H8。[Manufacturing of Protective Sheet H8] Except that component A2 is used instead of component A1, protective sheet H8 is manufactured using the same method as protective sheet H1.
[保護片H9的製造]除了使用組成物A3代替組成物A1以外,藉由與保護片H1相同的方法製造保護片H9。[Manufacturing of Protective Sheet H9] Except that component A3 is used instead of component A1, protective sheet H9 is manufactured using the same method as protective sheet H1.
[保護片H10的製造]除了使用組成物A4代替組成物A1以外,藉由與保護片H1相同的方法製造保護片H10。[Manufacturing of Protective Sheet H10] Except that component A4 is used instead of component A1, protective sheet H10 is manufactured by the same method as protective sheet H1.
[保護片H11的製造]除了使用組成物B4代替組成物B1、使用組成物C2代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H11。[Manufacturing of Protective Sheet H11] Except that component B4 is used instead of component B1 and component C2 is used instead of component C1, protective sheet H11 is manufactured by the same method as protective sheet H1.
[保護片H12的製造]除了使用組成物A6代替組成物A1、使用組成物B10代替組成物B1、使用組成物C3代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H12。[Manufacturing of Protective Sheet H12] Except that component A6 is used instead of component A1, component B10 is used instead of component B1, and component C3 is used instead of component C1, protective sheet H12 is manufactured by the same method as protective sheet H1.
[保護片H13的製造]除了使用組成物A7代替組成物A1、使用組成物B8代替組成物B1、使用組成物C4代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H13。[Manufacturing of Protective Sheet H13] Except that component A7 is used instead of component A1, component B8 is used instead of component B1, and component C4 is used instead of component C1, protective sheet H13 is manufactured using the same method as protective sheet H1.
[保護片H14的製造]除了使用組成物A4代替組成物A1、使用組成物B9代替組成物B1、使用組成物C5代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H14。[Manufacturing of Protective Sheet H14] Except that component A4 is used instead of component A1, component B9 is used instead of component B1, and component C5 is used instead of component C1, protective sheet H14 is manufactured using the same method as protective sheet H1.
對單層A1~單層A7、單層B1~單層B10、單層C1~單層C6及保護片H1~保護片H14進行以下的試驗/評價。The following tests/evaluations were conducted on single-layer A1 to single-layer A7, single-layer B1 to single-layer B10, single-layer C1 to single-layer C6, and protective plates H1 to protective plates H14.
[玻璃轉移溫度]對各層的玻璃轉移溫度進行測定,結果為單層A1:42℃單層B1:22℃單層C1:27℃。[Glass transition temperature] The glass transition temperature of each layer was measured, and the results were: single layer A1: 42℃, single layer B1: 22℃, and single layer C1: 27℃.
[流動長度]於單層A1~單層C1及保護片H1~保護片H14各自的單面,在90℃的加熱條件下以2 m/分鐘的速度層壓聚醯亞胺膜(卡普頓(Capton)500H),衝壓成0.5 cm×1 cm的長方形。於層壓後將剝離片剝下,載置於聚醯亞胺膜(卡普頓(Capton)500H)。藉此,單層A1~單層C1及保護片H1~保護片H14分別成為被兩張聚醯亞胺膜夾入的形狀。[Flow Length] Polyimide films (Capton 500H) are laminated on one side of each of the monolayers A1 to C1 and the protective sheets H1 to H14 at a heating rate of 2 m/min under a heating condition of 90°C, and stamped into rectangles of 0.5 cm × 1 cm. After lamination, the release liner is peeled off and placed on the polyimide film (Capton 500H). In this way, monolayers A1 to C1 and the protective sheets H1 to H14 are each sandwiched between two polyimide films.
於由聚醯亞胺膜夾持的單層A1~單層C1及保護片H1~保護片H14,分別放置一張耐熱脫模膜(歐普蘭(opulent)CR1012MT4 150 μm,三井化學東賽璐(Mitsui Chemicals Tohcello)製造),利用橡膠硬度70度(以JIS K 6253 A,得樂(TECLOCK)橡膠/塑膠硬度計(硬度計(durometer))GS-719N進行測定)的矽酮橡膠將該些夾持,於180℃的加熱條件下,以1 MPa按壓5分鐘。算出熔融後自聚醯亞胺膜的各邊流動的部分中最流動的部分的長度,將四邊的平均值作為流動長(μm)進行測定。對單層A1~單層C1及保護片H1~保護片H14分別製成四張樣品,測定流動長(μm)的平均值。另外,基於測定的流動長度(μm)的平均值及膜厚(μm),算出指數X、指數Z、指數Y、指數W。A heat-resistant release film (Opulent CR1012MT4 150 μm, manufactured by Mitsui Chemicals Tohcello) was placed on each of the monolayers A1 to C1 and protective sheets H1 to H14, which were held between polyimide films. These were held in place using silicone rubber with a rubber hardness of 70 degrees (measured using a JIS K 6253 A, TECLOCK rubber/plastic hardness tester GS-719N). The mixture was heated to 180°C and pressed at 1 MPa for 5 minutes. The length of the most fluid portion flowing from each side of the polyimide film after melting was calculated, and the average value of the four sides was used as the flow length (μm). Four samples were prepared for each of the monolayers A1 to C1 and the protective sheets H1 to H14, and the average flow length (μm) was measured. In addition, based on the measured average flow length (μm) and film thickness (μm), the exponents X, Z, Y, and W were calculated.
[冷熱循環](試驗單片的製作)準備於包含玻璃環氧的基板上呈陣列狀搭載有5個×5個經模塑密封的電子零件(1000 μm×1000 μm)的基板。基板的厚度為0.3 mm,模塑密封厚、即自基板上表面至模塑密封材的頂面的高度(零件高度)H為0.7 mm。其後,沿著作為零件彼此的間隙的槽進行半切割,獲得試驗基板。半切割槽深度設為0.8 mm(基板20的切割槽深度為0.1 mm),半切割槽寬度設為200 μm。於8 MPa、170℃的條件下,將保護片H1~保護片H14熱壓接於所述試驗基板上5分鐘,用手將緩衝材剝離。其後,將所獲得的電子零件搭載基板沿著半切割槽進行全切割,藉此對各保護片獲得25個試驗單片。將所獲得的試驗單片投入至冷熱衝擊裝置(「TSE-11-A」,愛斯佩克(Espec)公司製造),於高溫曝露:125℃且15分鐘、低溫曝露:-50℃且15分鐘的曝露條件下實施1000次交替曝露。其後,取出試驗單片,觀察電子零件保護層的外觀,對破損的試驗單片數進行計數,按照以下的基準進行評價。對於各例,試驗個數分別設為10個。+++:破損的試驗單片數為0個。++:破損的試驗單片數為1個以上且2個以下。+:破損的試驗單片數為3個以上且5個以下。(實用水準)NG:破損的試驗單片數為6個以上。[表1A]
[探針黏性試驗]使用保護片H1~保護片H10進行探針黏性試驗。按照第十七修正日本藥典 一般試驗法 6.製劑試驗法 6.12黏著力試驗法 3.4探針黏性試驗法將保護片H1~保護片H10切成2 cm見方以上進行試驗。另外,試驗是於配重環貼上片,於其上放置合計200 g的重物,藉此施加載荷來進行。試驗於N=4時進行,將其平均值作為結果。以下示出結果。[表3A]
如圖示般,示出了於第一保護層32側(第一面側)幾乎無黏性。另一方面,示出了於第二保護層34側(第二面側),根據填料(二氧化矽)的量而黏性提高。As shown in the figure, there is almost no tackiness on the side of the first protective layer 32 (first surface side). On the other hand, the tackiness is increased on the side of the second protective layer 34 (second surface side) depending on the amount of filler (silica).
[電子器件封裝的製造]準備搭載有藉由凸塊而與電路基板連接的IC晶片及八邊形的電感器的安裝基板,使第一保護層側與電路基板側相向,於180℃、1 MPa的條件下對保護片H1進行5分鐘熱壓接,製造具有保護層的電子器件封裝P1。藉由相同的方法由保護片H2~保護片H14製造電子器件封裝P2~電子器件封裝P14。關於電子器件封裝P1~電子器件封裝P14中的電子器件封裝P7、電子器件封裝P11及電子器件封裝P13以外的電子器件封裝(滿足指數X=0.5~2.0),確認到任一保護層均以15 μm以上的膜厚形成於凸塊的側面、電感器的側面、IC晶片的上角部的任一者,起到充分的絕緣保護功能。但是,於P11(指數X>2.0)中,保護層的流動性過高而產生膜厚變薄的部分。另外,於P7及P13(指數X<0.5)中,保護層的流動性過低而產生保護層無法遍佈的部分。另外,關於填料量為10重量份以上的H3、H7、H10、H13及H14的保護片,冷熱循環試驗的結果較其他保護片而言更差。[Manufacturing of Electronic Device Packages] A mounting substrate containing an IC chip connected to a circuit board via bumps and an octagonal inductor is prepared. With the first protective layer side facing the circuit board side, the protective sheet H1 is hot-pressed at 180°C and 1 MPa for 5 minutes to manufacture an electronic device package P1 with a protective layer. Electronic device packages P2 to P14 are manufactured from protective sheets H2 to H14 using the same method. Regarding electronic device packages P7, P11, and P13 (excluding electronic device packages P1 to P14, satisfying index X = 0.5 to 2.0), it was confirmed that each protective layer is formed with a thickness of 15 μm or more on any of the following surfaces: the side of the bump, the side of the inductor, or the upper corner of the IC chip, providing sufficient insulation protection. However, in P11 (index X > 2.0), the protective layer has excessively high fluidity, resulting in areas with thinner film thickness. Furthermore, in P7 and P13 (index X < 0.5), the protective layer has insufficient fluidity, resulting in areas where the protective layer cannot be fully distributed. In addition, the results of the thermal cycling test for protective sheets of H3, H7, H10, H13 and H14 with a filler content of 10 parts by weight or more were worse than those for other protective sheets.
以上,使用實施方式對本發明進行了說明,但本發明的技術範圍並不限定於所述實施方式中記載的範圍。對於本領域技術人員而言明確能夠對所述實施方式施加各種變更或改良。根據申請專利範圍的記載明確,此種施加了變更或改良的實施方式亦可包含於本發明的技術範圍內。The present invention has been described above using embodiments, but the scope of the present invention is not limited to the scope described in the embodiments. It will be apparent to those skilled in the art that various modifications or alterations can be made to the embodiments. As expressly stated in the patent application, such modified or altered embodiments may also be included within the scope of the present invention.
申請專利範圍、說明書、及圖式中示出的方法中的動作、程序、步驟、及階段等各處理的執行順序並未特別明示為「於…以前」、「於…之前」等,另外,應留意只要不於之後的處理中使用之前的處理的結果所產生者,則可按照任意的順序來實現。關於申請專利範圍、說明書、及圖式中的動作流程,即便為了方便而使用「首先」、「接下來」等進行了說明,亦並不意味著必須依序來實施。The execution order of actions, procedures, steps, and stages in the methods shown in the patent application, specification, and drawings is not specifically indicated as "before" or "before". Furthermore, it should be noted that as long as the results of previous processes are not used in subsequent processes, they can be implemented in any order. Even if terms such as "firstly" or "next" are used for convenience in the description of the action flow in the patent application, specification, and drawings, it does not mean that they must be implemented in a specific order.
10:電路基板12:安裝基板20:電子器件(基板)22:電子器件24:連接構件30:保護層32:第一保護層34:第二保護層35:聚醯亞胺膜36:第三保護層38:保護片40:導電層42:剝離片44:金屬材料層46:含金屬片100:電子器件封裝L1~L4:長度(流動長度)S100、S200、S300:步驟10: Circuit board 12: Mounting board 20: Electronic device (board) 22: Electronic device 24: Connector 30: Protective layer 32: First protective layer 34: Second protective layer 35: Polyimide film 36: Third protective layer 38: Protective sheet 40: Conductive layer 42: Peel-off sheet 44: Metal material layer 46: Metal sheet 100: Electronic device packaging L1~L4: Length (flow length) S100, S200, S300: Steps
圖1表示本實施方式的電子器件封裝100的一例。圖2表示本實施方式的保護片38的一例。圖3表示本實施方式的流動長的一例。圖4表示本實施方式的保護片38的另一例。圖5表示本實施方式的電子器件封裝100的製造方法的流程的一例。圖6表示圖5的流程中的S200的一例。圖7表示形成有保護層30的安裝基板12的一例。圖8表示含金屬片46的一例。圖9表示使用含金屬片46的S300的一例。Figure 1 shows an example of the electronic device package 100 of this embodiment. Figure 2 shows an example of the protective sheet 38 of this embodiment. Figure 3 shows an example of the flow path of this embodiment. Figure 4 shows another example of the protective sheet 38 of this embodiment. Figure 5 shows an example of the manufacturing method flow of the electronic device package 100 of this embodiment. Figure 6 shows an example of S200 in the flow of Figure 5. Figure 7 shows an example of the mounting substrate 12 with the protective layer 30 formed. Figure 8 shows an example of the metal sheet 46. Figure 9 shows an example of S300 using the metal sheet 46.
10:電路基板20:電子器件22:電子器件24:連接構件30:保護層40:導電層100:電子器件封裝10: Circuit board; 20: Electronic device; 22: Electronic device; 24: Connector; 30: Protective layer; 40: Conductive layer; 100: Electronic device package.
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| JP2021-193194 | 2021-11-29 |
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| US20160376473A1 (en) | 2015-06-26 | 2016-12-29 | Nitto Denko Corporation | Pressure-sensitive adhesive sheet and magnetic disk drive |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20160376473A1 (en) | 2015-06-26 | 2016-12-29 | Nitto Denko Corporation | Pressure-sensitive adhesive sheet and magnetic disk drive |
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