TW202322301A - Protective sheet, electronic device package, and manufacturing method for electronic device package - Google Patents
Protective sheet, electronic device package, and manufacturing method for electronic device package Download PDFInfo
- Publication number
- TW202322301A TW202322301A TW111143663A TW111143663A TW202322301A TW 202322301 A TW202322301 A TW 202322301A TW 111143663 A TW111143663 A TW 111143663A TW 111143663 A TW111143663 A TW 111143663A TW 202322301 A TW202322301 A TW 202322301A
- Authority
- TW
- Taiwan
- Prior art keywords
- protective layer
- electronic device
- protective
- layer
- sheet
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/281—Applying non-metallic protective coatings by means of a preformed insulating foil
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
-
- H10W74/10—
-
- H10W74/114—
-
- H10W74/40—
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
本發明是有關於一種保護片、電子器件封裝及電子器件封裝的製造方法。The invention relates to a protective sheet, an electronic device package and a manufacturing method for the electronic device package.
已知有於搭載有積體電路(integrated circuit,IC)晶片的基板上形成絕緣層,保護晶片免受電磁波的影響的方法(例如,專利文獻1)。 [專利文獻1]美國專利7,445,968公報 There is known a method of forming an insulating layer on a substrate on which an integrated circuit (integrated circuit, IC) chip is mounted to protect the chip from electromagnetic waves (for example, Patent Document 1). [Patent Document 1] US Patent No. 7,445,968
於本發明的第一形態中,提供一種保護片,用於電路基板,所述保護片具有第一面及與第一面為相反面的第二面,所述保護片中,第一面的利用探針黏性試驗所得的黏著力為0.15 N/cm 2以下,且由下述式1求出的指數X為0.5~2.0。 [式1] X=F total/T total(F total;於將製成0.5 cm×1.0 cm的長方形的保護片於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T total;保護片的總厚度(μm)) In a first aspect of the present invention, a protective sheet is provided for a circuit board, the protective sheet has a first surface and a second surface opposite to the first surface, and in the protective sheet, the first surface The adhesive force obtained by the probe adhesion test is 0.15 N/cm 2 or less, and the index X calculated from the following formula 1 is 0.5 to 2.0. [Formula 1] X=F total /T total (F total ; when a rectangular protective sheet made of 0.5 cm×1.0 cm is heated and pressed at 180°C and 1 MPa for 5 minutes, the most fluid part of each side The average value of the long four sides of the flow (μm), T total ; the total thickness of the protective sheet (μm))
所述保護片的拉伸斷裂強度可為10 N/mm 2~70 N/mm 2。 The tensile breaking strength of the protection sheet may be 10 N/mm 2 to 70 N/mm 2 .
所述保護片可包括第一保護層及第二保護層。第一保護層可為所述保護片的所述第一面側的最表層。進而,第二保護層於所述保護片中可為所述第二面側的最表層。The protection sheet may include a first protection layer and a second protection layer. The first protective layer may be the outermost layer on the first surface side of the protective sheet. Furthermore, the second protective layer may be the outermost layer on the side of the second surface in the protective sheet.
於所述任一保護片中,所述第二保護層的由下述式2求出的指數Y可為0.5~1.5。 [式2] Y=F 2/T 2(F 2;於將製成0.5 cm×1.0 cm的長方形的第二保護層於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T 2;第二保護層的厚度(μm)) In any one of the protective sheets, an index Y of the second protective layer obtained from the following formula 2 may be 0.5 to 1.5. [Formula 2] Y=F 2 /T 2 (F 2 ; when the second protective layer made into a rectangle of 0.5 cm×1.0 cm is heated and pressed at 180°C and 1 MPa for 5 minutes, the most fluid on each side The average value of the long four sides of the part of the flow (μm), T 2 ; the thickness of the second protective layer (μm))
於所述任一保護片中,第一保護層的由下述式3求出的指數Z可為2.0~15.0。 [式3] Z=F 1/T 1(F 1;於將製成0.5 cm×1.0 cm的長方形的第一保護層於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T 1;第一保護層的厚度(μm)) In any one of the above protective sheets, the index Z of the first protective layer obtained by the following formula 3 may be 2.0 to 15.0. [Formula 3] Z=F 1 /T 1 (F 1 ; when the first protective layer made into a rectangle of 0.5 cm×1.0 cm is heated and pressed at 180°C and 1 MPa for 5 minutes, the most fluid on each side The average value of the long four sides of the part of the flow (μm), T 1 ; the thickness of the first protective layer (μm))
於所述任一保護片中,第二保護層的玻璃轉移溫度可為60℃以下。In any one of the protective sheets, the glass transition temperature of the second protective layer may be lower than 60°C.
於所述任一保護片中,第一保護層的膜厚可為5 μm~150 μm,第二保護層的膜厚可為10 μm~200 μm。In any one of the protective sheets, the film thickness of the first protective layer may be 5 μm to 150 μm, and the film thickness of the second protective layer may be 10 μm to 200 μm.
於所述任一保護片中,可於第一保護層與所述第二保護層之間包括第三保護層。進而,第三保護層的由下述式4求出的指數W可為1.0~3.0。 [式4] W=F 3/T 3(F 3;於將製成0.5 cm×1.0 cm的長方形的第三保護層於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm),T 3;第三保護層的厚度(μm)) In any one of the protective sheets, a third protective layer may be included between the first protective layer and the second protective layer. Furthermore, the index W of the third protective layer obtained by the following formula 4 may be 1.0 to 3.0. [Formula 4] W=F 3 /T 3 (F 3 ; when the third protective layer made into a rectangle of 0.5 cm×1.0 cm is heated and pressed at 180°C and 1 MPa for 5 minutes, the most fluid on each side The average value of the long four sides of the part of the flow (μm), T 3 ; the thickness of the third protective layer (μm))
於所述任一保護片中,第三保護層的膜厚可為20 μm~200 μm。In any one of the protective sheets, the film thickness of the third protective layer may be 20 μm˜200 μm.
於所述任一保護片中,第一保護層、第二保護層及第三保護層可包含聚胺基甲酸酯系樹脂、硬化劑。In any one of the protective sheets, the first protective layer, the second protective layer, and the third protective layer may contain polyurethane resin and a curing agent.
於所述任一保護片中,保護片可包含填料,保護片的所述第二面側的填料的質量濃度可較所述第一面側大。In any one of the protective sheets, the protective sheet may contain a filler, and the filler may have a higher mass concentration on the second side of the protective sheet than on the first side.
另外,於第二形態中,提供一種電子器件封裝,包括:電路基板,於表面設置有導電電路;電子器件,配置於電路基板上;以及保護層,設置於電路基板及電子器件上,電子器件於電路基板的主表面的觀察或自主表面的側面的觀察中具有五邊形以上的多邊形。In addition, in the second form, an electronic device package is provided, including: a circuit substrate, with a conductive circuit disposed on the surface; an electronic device configured on the circuit substrate; and a protective layer, disposed on the circuit substrate and the electronic device, and the electronic device When viewed from the main surface of the circuit board or viewed from the side of the main surface, it has a polygonal shape of pentagon or more.
於所述電子器件封裝中,電子器件可於側面具有凹部。In the electronic device package, the electronic device may have a concave portion on a side surface.
於所述電子器件封裝的任一者中,電子器件於主表面的觀察中可具有五邊形以上的多邊形形狀。In any one of the electronic device packages, the electronic device may have a polygonal shape of not less than a pentagon as viewed from the main surface.
另外,於第三形態中,提供一種電子器件封裝,包括:電路基板,於表面設置有導電電路;電子器件,配置於電路基板上;以及保護層,設置於電路基板及電子器件上,保護層至少部分地包覆將電子器件與電路基板電性連接的連接構件。In addition, in the third form, an electronic device package is provided, including: a circuit substrate, with a conductive circuit disposed on the surface; an electronic device configured on the circuit substrate; and a protective layer, disposed on the circuit substrate and the electronic device, the protective layer At least partially covering the connecting member electrically connecting the electronic device with the circuit substrate.
於所述電子器件封裝中,連接構件可為配置於電子器件的下表面的凸塊。In the electronic device package, the connecting member may be a bump disposed on the lower surface of the electronic device.
於所述電子器件封裝的任一者中,連接構件可為搭載所述電子器件的引線框架。In any one of the electronic device packages, the connecting member may be a lead frame on which the electronic device is mounted.
另外,於第四形態中,提供一種電子器件封裝,包括:電路基板,於表面設置有導電電路;電子器件,配置於電路基板上;以及保護層,設置於電路基板及電子器件上,電子器件具有積層陶瓷電容器(Multi-layer Ceramic Capacitors,MLCC)。In addition, in the fourth form, an electronic device package is provided, including: a circuit substrate, with a conductive circuit disposed on the surface; an electronic device, configured on the circuit substrate; and a protective layer, disposed on the circuit substrate and the electronic device, and the electronic device With multi-layer ceramic capacitors (Multi-layer Ceramic Capacitors, MLCC).
於所述電子器件封裝中,保護層可包含至少兩層。In the electronic device package, the protective layer may include at least two layers.
於所述電子器件封裝的任一者中,保護層可為熱硬化性樹脂的硬化物。In any one of the electronic device packages, the protective layer may be a cured product of a thermosetting resin.
於所述電子器件封裝的任一者中,可於保護層上形成導電層。In any of the electronic device packages, a conductive layer may be formed on the protective layer.
於第五形態中,提供一種電子器件封裝的製造方法,包括如下步驟:於在表面設置有導電電路的基板上安裝有電子器件的安裝基板,以第一面朝向電子器件側的方式配置所述任一保護片,於安裝基板上形成由保護片形成的保護層。In a fifth aspect, there is provided a method of manufacturing an electronic device package, including the following steps: a mounting substrate on which an electronic device is mounted on a substrate provided with a conductive circuit on the surface, and the first surface is arranged to face the electronic device side. In any one of the protective sheets, a protective layer formed of the protective sheet is formed on the mounting substrate.
於所述製造方法中,形成保護層的步驟可包括在配置所述保護片後將其熱壓於所述安裝基板。In the manufacturing method, the step of forming the protective layer may include hot pressing the protective sheet on the mounting substrate after disposing the protective sheet.
於所述製造方法中,可更包括在保護層上形成導電層的步驟。In the manufacturing method, a step of forming a conductive layer on the protective layer may be further included.
再者,所述發明的概要並未列舉本發明的必要特徵的全部。另外,該些特徵群的次組合(subcombination)亦可成為發明。Furthermore, the summary of the invention does not list all the essential features of the invention. In addition, a subcombination of these feature groups can also be an invention.
以下,通過發明的實施方式對本發明進行說明,但以下的實施方式並不限定申請專利範圍所涉及的發明。另外,實施方式中所說明的特徵的組合未必全部為發明的解決手段所必需的。Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the inventions according to the claims. In addition, all combinations of the features described in the embodiments are not necessarily essential to the solution means of the invention.
圖1表示本實施方式的電子器件封裝100的一例。電子器件封裝100是安裝有IC晶片等電子器件的封裝,具有良好的電磁波屏蔽性與散熱性。電子器件封裝100包括電路基板10、電子器件20及電子器件22(以下,亦簡稱為「電子器件20等」)、連接構件24、保護層30、以及導電層40。FIG. 1 shows an example of an
電路基板10於表面設置有導電電路(未圖示),搭載電子器件20等。電路基板10可為印刷配線基板或安裝模組基板等。導電電路可為由銅等導電金屬或包含導電金屬的材料形成的電路。電路基板10可為剛性基板或可撓性基板。The
視需要可對電路基板10進行加工。例如,可於電路基板10上設置印字、標記、及切割槽等。The
電子器件20等配置於電路基板10上,發揮各種功能。電子器件20等例如可為記憶體晶片、電源晶片、音源晶片或中央處理單元(central processing unit,CPU)晶片等積體電路、電晶體或二極體等主動元件、或積層陶瓷電容器(MLCC)等電容器、熱阻器、電感器或電阻等被動元件。特別是MLCC於側面具有外部電極,就防止與其他導電體的接觸或漏電的觀點而言,絕緣保護的必要性特別高。藉由後述的本實施方式的保護片,可利用保護層30充分地對MLCC的零件整體進行絕緣保護。
電子器件20等可為立方體或長方體形狀。電子器件20等可為更複雜的形狀,於電路基板的主表面(圖1中的XY平面)的觀察中可具有五邊形以上的多邊形。The
例如,電子器件20等中,自主表面觀察到的平面形狀可為六邊形、八邊形或其他多邊形。作為一例,電子器件22可為平面形狀為八邊形的電感器。另外,電子器件20等在自主表面的側面(圖1中的XZ平面或YZ平面等)的觀察中可具有五邊形以上的多邊形。例如,電子器件20等可為於側面具有凹部或凸部的立方體或長方體形狀,電子器件22可為於側面設置有用於形成線圈的凹部的電感器。For example, in the
電子器件20等可於電路基板10上配置單個或多個。例如,電子器件20等可於電路基板10上形成在n×m個陣列上(n及m是2以上的整數)。A single or multiple
電子器件20等的厚度理想的是2000 μm以下。這是因為,若超過2000 μm,則於形成保護層30及導電層40時,有可能會因與電路基板10的階差而發生斷掉。另外,電子器件20彼此的間隔理想的是50 μm以上。這是因為,若間隔未滿50 μm,則有可能無法充分形成保護層30及導電層40。The thickness of the
連接構件24將電子器件20等與電路基板10電性連接。連接構件24可包含配置於電子器件20等的下表面的焊料球等凸塊、搭載電子器件20等的引線框架、及接合線中的一個以上。於圖1的例子中,作為將電子器件20與電路基板10連接的連接構件24,可使用凸塊。The
保護層30設置於電路基板10及電子器件20等上,保護電路基板10及電子器件20等免受電磁波、衝擊等的影響。另外,保護層30亦具有自導電層40對電路基板10及電子器件20等進行絕緣保護的作用。保護層30可覆蓋電子器件20等與電路基板10中未設置電子器件20等的區域的整體或一部分上。保護層30可僅覆蓋電路基板10中設置有導電電路的區域,亦可不覆蓋無導電電路的部分。The
即使於如所述般電子器件20等具有多邊形等複雜的形狀的情況下,保護層30亦充分地包覆電子器件20等。例如,即使如圖1所示般電子器件22於側面具有凹部的情況下,保護層30亦進入凹部的一部分或整體而保護電子器件22。另外,即使電子器件20等為多邊形般保護層30的膜厚容易變薄的角的數量多的形狀,本實施方式的保護層30亦可以充分的膜厚覆蓋角部分。Even when the
保護層30可至少部分地包覆連接構件24。例如,於圖1中,保護層30包覆作為凸塊的連接構件24的側面。即使於連接構件24包含引線框架或接合線的情況下,保護層30亦可包覆該些的至少一部分。The
保護層30可為熱硬化性樹脂的硬化物等。保護層30可包含至少兩層。例如,保護層30可為兩層、三層或四層以上。為了將保護層30的膜厚保持於適當的範圍,保護層30較佳為三層。此種層可為源自後述的保護片的層結構而形成者。保護層30的層結構及材料等將於後面敘述。The
保護層30的膜厚可根據場所而不同。例如,於電子器件20等的角部中,保護層30的膜厚可較電子器件20等的頂表面而言膜厚更薄。另外,例如於電子器件20等與電路基板10相接的角凹部中,保護層30的膜厚可較電子器件20等的頂表面而言更厚。The film thickness of the
導電層40設置於保護層30上,保護電子器件20等免受外部電磁波的影響、及/或將自電子器件20等產生的熱釋放到外部。導電層40可為包含金屬的層。例如,導電層40可為由金屬本身形成的金屬薄膜、或者分散有導電填料的樹脂層。導電層40的材料等的詳細情況將於後面敘述。The
於包含導電填料的熱硬化性樹脂的情況下,導電層40的厚度可為2 μm~500 μm,較佳為可為5 μm~100 μm。另一方面,於鍍敷或蒸鍍、濺鍍的情況下,可為0.01 μm~10 μm,較佳為可為0.1 μm~5 μm。若厚度過薄,則電磁波阻擋效果或散熱效果及機械強度有可能變得不充分,若過厚,則產生電子器件封裝100過於大型化而體積增大的問題。In the case of a thermosetting resin containing conductive fillers, the thickness of the
導電層40中所使用的金屬薄膜及導電填料較佳為導電性及/或導熱性良好者,例如,可為體積電阻率為10
-3Ω·cm以下及/或導熱率為10 W/m·K以上者。
The metal thin film and conductive filler used in the
導電層40可與露出於電路基板10的側面或上表面的接地圖案及/或電子器件20的接地圖案連接。再者,電子器件封裝100亦可不具有導電層40。The
如此,藉由本實施方式的電子器件封裝100,保護層30對具有複雜的形狀的電子器件20等、及連接構件24進行絕緣保護。另外,藉由電子器件封裝100,導電層40可保護電子器件20等免受電磁波的影響,同時可實現電子器件20等產生的熱的散熱。Thus, according to the
再者,如以下所說明般,保護層30可由保護片38形成。藉由保護片38,不會於保護層30與電路基板10之間產生夾著空氣的空氣夾雜,可充分地包覆複雜的形狀的電子器件20等的周圍而進行絕緣保護。Furthermore, the
圖2表示本實施方式的保護片38的一例。保護片38是電路基板用的片,用於形成圖1所示的保護層30。如圖示般,保護片38具有第一保護層32、第二保護層34及第三保護層36。FIG. 2 shows an example of the
保護片38具有第一面(圖1的下側)及與第一面為相反面的第二面(圖1的上側)。第一面側為與電路基板10及電子器件20等相接之側,第二面側為與導電層40相接之側。第一保護層32是保護片38的第一面側的最表層。第二保護層34是第二面側的最表層。第三保護層36設置於第一保護層32與第二保護層34之間。The
保護片38的第一面的利用探針黏性試驗所得的黏著力為0.15 N/cm
2以下,較佳為0.12 N/cm
2以下,更佳為0.10 N/cm
2以下。探針黏性試驗可藉由與第十八修正日本藥典 一般試驗法 6.製劑試驗法 6.12黏著力試驗法 3.4探針黏性試驗法相同的試驗法或依據此的試驗法進行。
The adhesive strength of the first surface of the
藉由黏著力滿足所述範圍,於將保護片38配置於電路基板10時,可抑制保護片38的黏著性,防止保護片38的不希望的部分黏貼於電路基板10或潤濕擴展(所謂的覆液(puddling))。另外,若保護片38的黏性高,則於壓製時有時黏貼於電路基板10而阻礙空氣排出(所謂的空氣夾雜)。但是,藉由黏著力滿足所述範圍的保護片38,可順利地進行空氣排出。When the adhesive force satisfies the above-mentioned range, when the
保護片38的第二面的利用探針黏性試驗所得的黏著力可為0.01 N/cm
2以上,較佳為可為0.05 N/cm
2以上,更佳為可為0.10 N/cm
2以上。另外,第一面與第二面的黏著力之差可為0.05 N/cm
2~0.40 N/cm
2,較佳為可為0.05 N/cm
2~0.30 N/cm
2,更佳為可為0.10 N/cm
2~0.20 N/cm
2。藉由黏著力滿足所述範圍,充分地確保與第二面接觸並積層於保護片上的緩衝材與第二面的密接性,從而可有效率地進行壓製。緩衝材可以於加熱壓製時對保護片施加適當的壓力為目的而積層於保護片上。
The adhesive strength of the second surface of the
另外,保護片38的由下述式1求出的指數X可為0.5~2.0,較佳為0.6~1.7,更佳為0.7~1.5。
[式1]
X=F
total/T
total此處,F
total為於將製成0.5 cm×1.0 cm的長方形的保護片38於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T
total為保護片38的總厚度(μm),於圖2的保護片38的情況下,T
total與第一保護層32的厚度、第二保護層34及第三保護層36的厚度之和相等。於保護片38包含剝離層的情況下,總厚度不包含剝離層的厚度。
In addition, the index X of the
圖3表示本實施方式的流動長的一例。以兩張聚醯亞胺膜夾住保護片38,切取成0.5 cm×1.0 cm的長方形的基準形。於將其維持於180℃的狀態下以1 MPa按壓5分鐘。此時,保護片38的一部分軟化而自聚醯亞胺膜之間流動,因此針對各邊測定最流動的部分距聚醯亞胺膜的長度。FIG. 3 shows an example of the flow length in this embodiment. The
例如,如圖3所示,以自與壓製前的保護片38為相同形狀(基準形)的聚醯亞胺膜35的四邊伸出的方式產生流動。此處,於四邊的每一邊,沿著自聚醯亞胺膜35的各邊延伸成90度的直線測定距最流動的部分的邊的長度L1~長度L4。將以μm為單位表示四邊的流動長度L1~流動長度L4的平均值者作為流動長F
total(μm)。
For example, as shown in FIG. 3 , the flow is generated so as to protrude from the four sides of the
於指數X包含於所述範圍內的情況下,於電路基板10及電子器件20等的周圍形成充分量的保護層30,從而可更可靠地對電子器件封裝100進行絕緣保護。另一方面,若指數X較所述範圍而言過大,則保護片38的熱壓接時的流動性過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。When the index X is included in the above range, a sufficient amount of the
若指數X較所述範圍而言更小,則保護片38的熱壓接時的流動性不足,電子器件20等無法被保護層30充分地絕緣保護,產生耐電壓性不足的風險。例如,有可能於電路基板10與電子器件20等相接的凹角部、連接構件24周邊、及/或具有複雜的形狀的電子器件20等的周圍(特別是凹部)無法充分地形成保護層30。When the index X is smaller than the above-mentioned range, the fluidity of the
另外,保護片38的拉伸斷裂強度可為10 N/mm
2~70 N/mm
2,較佳為可為15 N/mm
2~50 N/mm
2,更佳為可為20 N/mm
2~40 N/mm
2。拉伸斷裂強度可依據日本工業標準(Japanese Industrial Standards,JIS)-C-2151:2019進行測定。例如,拉伸斷裂強度可藉由如下方式算出:使用拉伸試驗機於23℃且60%RH的環境下以一分鐘50 mm/分鐘的速度拉伸保護片38,並計算保護片38斷裂時的強度(拉伸載荷值/保護片38的剖面積)。
In addition, the tensile breaking strength of the
若拉伸斷裂強度過大,則保護片38的熱壓接時的流動性不足,產生電子器件20等無法被保護層30充分地絕緣保護的風險。若拉伸斷裂強度過小,則保護片38的熱壓接時的流動性過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。另一方面,於拉伸斷裂強度包含於所述範圍內的情況下,於電路基板10及電子器件20等的周圍形成充分量的保護層30,從而可更可靠地對電子器件封裝100進行絕緣保護。If the tensile breaking strength is too high, the fluidity of the
保護片38的膜厚可為50 μm~500 μm,較佳為100 μm~250 μm。The film thickness of the
第一保護層32主要具有向保護片38賦予流動性的作用。第一保護層32的由下述式2求出的指數Z可為2.0~15.0,較佳為可為4.0~12.0,更佳為可為5.0~10.0。
[式2]
Z=F
1/T
1此處,F
1為於將製成0.5 cm×1.0 cm的長方形的第一保護層32於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T
1為第一保護層32的厚度(μm)。F
1可藉由與F
total相同的方法進行測定。
The first
如上所述,指數Z取較指數X而言更大的數值範圍。藉此,第一保護層32於保護片38的熱壓接時流動良好而可進入至具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等中。As mentioned above, the index Z takes a larger range of values than the index X. Thereby, the first
若指數Z較所述範圍而言過大,則流動性變得過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。另一方面,若指數Z較所述範圍而言更小,則保護片38的熱壓接時的流動性不足,產生電子器件20等無法被保護層30充分地絕緣保護的風險。另一方面,於指數Z包含於所述範圍內的情況下,於電路基板10及電子器件20等的周圍形成充分量的保護層30,從而可更可靠地對電子器件封裝100進行絕緣保護。When the index Z is too large compared to the above-mentioned range, the fluidity becomes too high, and a problem arises that the thickness of a part of the protective layer 30 (for example, the corner of the
第一保護層32的膜厚可為5 μm~150 μm,更佳為可為5 μm~50 μm,更佳為可為10 μm~30 μm。藉由第一保護層32的膜厚滿足所述範圍,可於抑制保護片38的黏著性的同時賦予適當的流動性。The film thickness of the first
第一保護層32的玻璃轉移溫度可為80℃以下,較佳為可為60℃以下,進而佳為可為50℃以下。第一保護層32的玻璃轉移溫度可為20℃以上,較佳為可為30℃以上,進而佳為可為35℃以上。The glass transition temperature of the first
第二保護層34主要具有於確保保護層30的厚度的同時防止由來自所接觸的導電層40的金屬離子引起的離子遷移的作用。第二保護層34的由下述式3求出的指數Y可為0.5~1.5,較佳為0.6~1.4,更佳為0.7~1.2。
[式3]
Y=F
2/T
2此處,F
2為於將製成0.5 cm×1.0 cm的長方形的第二保護層34於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T
2為第二保護層34的厚度(μm)。F
2可藉由與F
total相同的方法進行測定。
The second
如上所述,指數Y會達到所述範圍,於保護片38的熱壓接時,第二保護層34不會過於流動,牢固地殘存於電子器件20等的角部等保護層30的膜厚容易變薄的部分。藉此,可更可靠地對電子器件封裝100進行絕緣保護。另外,於導電層40形成於保護層30上的情況下,可充分地防止自導電層40的離子遷移。As mentioned above, when the index Y falls within the above-mentioned range, the second
若指數Y較所述範圍而言過大,則保護片38的熱壓接時的流動性過高,產生於保護層30的一部分(例如,電子器件20等的角部)厚度不足的問題。另一方面,若指數Y較所述範圍而言更小,則保護片38的熱壓接時的流動性不足,電子器件20等無法被保護層30充分地絕緣保護,或產生離子遷移的風險。If the index Y is too large than the above range, the fluidity of the
第二保護層34的膜厚可為10 μm~200 μm,更佳為可為30 μm~150 μm,更佳為可為50 μm~100 μm。藉由第二保護層34的膜厚滿足所述條件,可於維持電子器件20等的散熱性的同時確保保護層30整體的膜厚。The film thickness of the second
第二保護層34的膜厚可較第一保護層32而言更厚。於此情況下,可更可靠地消除於保護層30的一部分(例如,電子器件20等的角部)厚度不足的情況。另外,第一保護層32的膜厚可較第二保護層34而言更厚。於此情況下,可藉由保護層30更可靠地保護具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等。The film thickness of the second
第二保護層34的玻璃轉移溫度可為60℃以下,較佳為可為50℃以下,進而佳為可為40℃以下。第二保護層34的玻璃轉移溫度可為0℃以上,較佳為可為10℃以上,進而佳為可為20℃以上。另外,第二保護層34的玻璃轉移溫度可較第一保護層32的玻璃轉移溫度而言更低。藉此,充分地確保於加熱壓製時和第二保護層34接觸的緩衝材與第二保護層34的密接性,從而可有效率地進行壓製。The glass transition temperature of the second
第二保護層34主要具有於具有一定的流動性的同時確保保護層30的厚度的作用。第三保護層36的由下述式4求出的指數W可為1.0~3.0,較佳為可為1.2~2.7,更佳為可為1.5~2.5。
[式4]
W=F
3/T
3此處,F
3為於將製成0.5 cm×1.0 cm的長方形的第三保護層36於180℃、1 MPa下加熱按壓5分鐘時,於各邊最流動的部分的流動長的四邊的平均值(μm)。T
3為第三保護層36的厚度(μm)。F
3可藉由與F
total相同的方法進行測定。
The second
如上所述,指數W取指數Y與指數Z之間的數值範圍。藉此,於保護片38的熱壓接時,第三保護層36具有第一保護層32與第二保護層34之間的流動性,具有補充第一保護層32與第二保護層34所進行的包覆的效果。As mentioned above, the index W takes a value range between the index Y and the index Z. Thereby, when the
第三保護層36的膜厚可為20 μm~200 μm,更佳為可為30 μm~150 μm,更佳為可為40 μm~80 μm。藉由第三保護層36的膜厚滿足所述條件,可起到如下效果:藉由保護層30保護具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等的效果、以及牢固地殘存於保護層30的膜厚容易變薄的部分的效果。The film thickness of the third
再者,第三保護層36可包含多個層。例如,第三保護層36可藉由將兩張相同的樹脂膜層壓而構成。Furthermore, the third
第三保護層36的膜厚可較第一保護層32而言更厚。於此情況下,可更可靠地消除於保護層30的一部分(例如,電子器件20等的角部)厚度不足的情況。另外,第一保護層32的膜厚可較第三保護層36而言更厚。於此情況下,可藉由保護層30更可靠地保護具有複雜的形狀的電子器件20等的周圍(特別是凹部)、連接構件24、及/或電路基板10與電子器件20等的間隙等。The film thickness of the third
第三保護層36的玻璃轉移溫度可為60℃以下,較佳為可為50℃以下,進而佳為可為40℃以下。第三保護層36的玻璃轉移溫度可為0℃以上,較佳為可為10℃以上,進而佳為可為20℃以上。另外,第三保護層36的玻璃轉移溫度可較第一保護層32的玻璃轉移溫度而言更低。藉此,第三保護層36的衝擊吸收性提高,從而可提高保護層30整體的衝擊吸收力。The glass transition temperature of the third
於高溫下,第二保護層34可具有較第一保護層32而言更硬的性質。例如,於120℃下,第二保護層34的楊氏模量可較第一保護層32的楊氏模量而言更高。例如,120℃下的第一保護層32的楊氏模量可為0.5~3,第二保護層34的楊氏模量可為3~7。第三保護層36的楊氏模量可處於第一保護層32與第二保護層34之間,例如於120℃下可為1.5~3.5。藉由第一保護層32~第三保護層36具有此種楊氏模量,於進行熱壓的高溫下,保護片38可發揮適當的流動性。At high temperature, the second
第一保護層32、第二保護層34及第三保護層36可為熱硬化性樹脂。例如,第一保護層32、第二保護層34及第三保護層36可包含熱硬化性樹脂及硬化劑。The first
作為熱硬化性樹脂,可使用於一分子中具有一個以上的藉由加熱產生交聯反應的官能基的聚合物。作為官能基,例如可使用羥基、酚性羥基、甲氧基甲基、羧基、胺基、環氧基、氧雜環丁基、噁唑啉基、噁嗪基、氮丙啶基、硫醇基、異氰酸酯基、嵌段化異氰酸酯基、嵌段化羧基、及矽醇基等中的一種或多種。As the thermosetting resin, a polymer having one or more functional groups that undergo a crosslinking reaction by heating can be used in one molecule. As functional groups, for example, hydroxyl group, phenolic hydroxyl group, methoxymethyl group, carboxyl group, amine group, epoxy group, oxetanyl group, oxazoline group, oxazinyl group, aziridinyl group, thiol group, etc. One or more of groups, isocyanate groups, blocked isocyanate groups, blocked carboxyl groups, and silanol groups.
作為熱硬化性樹脂的一例,可使用聚胺基甲酸酯系樹脂、丙烯酸系樹脂、馬來酸系樹脂、聚丁二烯系樹脂、聚酯系樹脂、脲系樹脂、環氧系樹脂、氧雜環丁烷系樹脂、苯氧基系樹脂、聚醯亞胺系樹脂、聚醯胺系樹脂、聚醯胺醯亞胺系樹脂、酚系樹脂、甲酚系樹脂、三聚氰胺系樹脂、醇酸系樹脂、胺基系樹脂、聚乳酸系樹脂、噁唑啉系樹脂、苯並噁嗪系樹脂、矽酮系樹脂、及氟系樹脂等中的一種或多種。第一保護層32、第二保護層34及第三保護層36中的兩個或三個可使用相同的或同系的樹脂作為熱硬化性樹脂。Examples of thermosetting resins include polyurethane resins, acrylic resins, maleic resins, polybutadiene resins, polyester resins, urea resins, epoxy resins, Oxetane-based resin, phenoxy-based resin, polyimide-based resin, polyamide-based resin, polyamide-imide-based resin, phenol-based resin, cresol-based resin, melamine-based resin, alcohol One or more of acid-based resins, amino-based resins, polylactic acid-based resins, oxazoline-based resins, benzoxazine-based resins, silicone-based resins, and fluorine-based resins. Two or three of the first
作為硬化劑,可使用環氧系硬化劑、氮丙啶系硬化劑、酚系硬化劑、胺系硬化劑、異氰酸酯系硬化劑及金屬螯合物系硬化劑等中的一種或多種。再者,氮丙啶系硬化劑可為包含具有氮丙啶基的化合物的硬化劑,酚系硬化劑可為包含具有羥基直接鍵結於芳香族基(芳香環)的結構的化合物的硬化劑,胺系硬化劑可為包含具有胺基的化合物的硬化劑,異氰酸酯系硬化劑可為包含含有異氰酸酯基的化合物的硬化劑。金屬螯合物系硬化劑可為包含多牙配位體(螯合物配位體)與金屬離子配位而產生的錯合物的硬化劑。第一保護層32、第二保護層34及第三保護層36中的兩個或三個可使用相同的或同系的硬化劑。As the curing agent, one or more of epoxy-based curing agents, aziridine-based curing agents, phenol-based curing agents, amine-based curing agents, isocyanate-based curing agents, and metal chelate-based curing agents can be used. Furthermore, the aziridine-based curing agent may be a curing agent containing a compound having an aziridine group, and the phenol-based curing agent may be a curing agent containing a compound having a structure in which a hydroxyl group is directly bonded to an aromatic group (aromatic ring). The amine-based curing agent may be a curing agent containing a compound having an amine group, and the isocyanate-based curing agent may be a curing agent containing a compound containing an isocyanate group. The metal chelate-based curing agent may include a complex formed by coordinating a multidentate ligand (chelate ligand) with a metal ion. Two or three of the first
環氧系硬化劑可為環氧化合物。環氧化合物是於一分子中具有兩個以上的環氧基的化合物。作為環氧化合物的性狀,液狀及固形形狀均可。作為環氧化合物,例如可為縮水甘油醚型環氧化合物、縮水甘油胺型環氧化合物、縮水甘油酯型環氧化合物、環狀脂肪族(脂環型)環氧化合物等。The epoxy-based hardener may be an epoxy compound. An epoxy compound is a compound which has two or more epoxy groups in one molecule. As properties of the epoxy compound, both liquid and solid forms are acceptable. As an epoxy compound, a glycidyl ether type epoxy compound, a glycidylamine type epoxy compound, a glycidyl ester type epoxy compound, a cycloaliphatic (alicyclic type) epoxy compound etc. are mentioned, for example.
作為縮水甘油醚型環氧化合物,例如可為選自雙酚A型環氧化合物、雙酚F型環氧化合物、雙酚S型環氧化合物、雙酚AD型環氧化合物、甲酚酚醛清漆型環氧化合物、苯酚酚醛清漆型環氧化合物、α-萘酚酚醛清漆型環氧化合物、雙酚A型酚醛清漆型環氧化合物、二環戊二烯型環氧化合物、四溴雙酚A型環氧化合物、溴化苯酚酚醛清漆型環氧化合物、三(縮水甘油氧基苯基)甲烷、四(縮水甘油氧基苯基)乙烷等中的一個或多個者。As the glycidyl ether type epoxy compound, for example, it can be selected from bisphenol A type epoxy compound, bisphenol F type epoxy compound, bisphenol S type epoxy compound, bisphenol AD type epoxy compound, cresol novolak type epoxy compound, phenol novolak type epoxy compound, α-naphthol novolac type epoxy compound, bisphenol A novolac type epoxy compound, dicyclopentadiene type epoxy compound, tetrabromobisphenol A One or more of epoxy compounds, brominated phenol novolak type epoxy compounds, tris(glycidyloxyphenyl)methane, tetrakis(glycidyloxyphenyl)ethane, and the like.
作為縮水甘油胺型環氧化合物,例如可列舉:四縮水甘油基二胺基二苯基甲烷、三縮水甘油基對胺基苯酚、三縮水甘油基間胺基苯酚、四縮水甘油基間二甲苯二胺等。Examples of glycidylamine-type epoxy compounds include: tetraglycidyldiaminodiphenylmethane, triglycidyl p-aminophenol, triglycidyl m-aminophenol, tetraglycidyl m-xylene Diamine etc.
作為縮水甘油酯型環氧化合物,例如可列舉:鄰苯二甲酸二縮水甘油酯、六氫鄰苯二甲酸二縮水甘油酯、四氫鄰苯二甲酸二縮水甘油酯等。As a glycidyl ester type epoxy compound, diglycidyl phthalate, diglycidyl hexahydrophthalate, diglycidyl tetrahydrophthalate, etc. are mentioned, for example.
作為環狀脂肪族(脂環型)環氧化合物,例如可列舉環氧環己基甲基-環氧環己烷羧酸酯、雙(環氧環己基)己二酸酯等。另外,亦可使用液狀的環氧化合物。Examples of cycloaliphatic (alicyclic) epoxy compounds include epoxycyclohexylmethyl-epoxycyclohexanecarboxylate, bis(epoxycyclohexyl)adipate, and the like. In addition, a liquid epoxy compound can also be used.
氮丙啶系硬化劑可為氮丙啶化合物。作為氮丙啶化合物,例如可為選自N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶羰基化物)、N,N'-甲苯-2,4-雙(1-氮丙啶羰基化物)、雙異鄰苯二甲醯基-1-(2-甲基氮丙啶)、三-1-氮丙啶基氧化膦、N,N'-六亞甲基-1,6-雙(1-氮丙啶羰基化物)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、三-2,4,6-(1-氮丙啶基)-1,3,5-三嗪、三羥甲基丙烷三[3-(1-氮丙啶基)丙酸酯]、三羥甲基丙烷三[3-(1-氮丙啶基)丁酸酯]、三羥甲基丙烷三[3-(1-(2-甲基)氮丙啶基)丙酸酯]、三羥甲基丙烷三[3-(1-氮丙啶基)-2-甲基丙酸酯]、2,2'-雙羥基甲基丁醇三[3-(1-氮丙啶基)丙酸酯]、季戊四醇四[3-(1-氮丙啶基)丙酸酯]、二苯基甲烷-4,4-雙-N,N'-伸乙基脲、1,6-六亞甲基雙-N,N'-伸乙基脲、2,4,6-(三伸乙基亞胺基)-Syn-三嗪、雙[1-(2-乙基)氮丙啶基]苯-1,3-羧酸醯胺等中的一個或多個者。The aziridine-based hardener may be an aziridine compound. As the aziridine compound, for example, it can be selected from N,N'-diphenylmethane-4,4'-bis(1-aziridine carbonyl), N,N'-toluene-2,4-bis( 1-Aziridine Carbonyl), Diisophthaloyl-1-(2-Methylaziridine), Tris-1-Aziridinylphosphine Oxide, N,N'-Hexamethylene -1,6-bis(1-aziridine carbonyl), trimethylolpropane-tri-β-aziridinyl propionate, tetramethylolmethane-tri-beta-aziridinyl propionate ester, tris-2,4,6-(1-aziridinyl)-1,3,5-triazine, trimethylolpropane tris[3-(1-aziridinyl)propionate], Trimethylolpropane tris[3-(1-aziridinyl)butyrate], Trimethylolpropane tris[3-(1-(2-methyl)aziridinyl)propionate], Trimethylolpropane Tris[3-(1-Aziridinyl)-2-Methylpropionate], 2,2'-Bishydroxymethylbutanol Tris[3-(1-Aziridinyl) propionate], pentaerythritol tetrakis [3-(1-aziridinyl) propionate], diphenylmethane-4,4-bis-N,N'-ethylidene urea, 1,6-hexaethylene Methylbis-N,N'-ethylideneurea, 2,4,6-(triethyleneimino)-Syn-triazine, bis[1-(2-ethyl)aziridinyl] One or more of benzene-1,3-carboxyamide and the like.
酚系硬化劑可為酚化合物。例如,酚化合物可為於一分子中具有兩個以上的酚性羥基的酚樹脂,例如可選自雙酚A型酚樹脂、雙酚F型酚樹脂、苯酚芳烷基型酚樹脂、二環戊二烯型酚樹脂、三苯基甲烷型酚樹脂、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、二甲苯型酚樹脂、聯苯型酚樹脂中的一個或多個。The phenolic hardener may be a phenolic compound. For example, the phenolic compound may be a phenol resin having two or more phenolic hydroxyl groups in one molecule, for example, may be selected from bisphenol A type phenol resin, bisphenol F type phenol resin, phenol aralkyl type phenol resin, bicyclic One or more of pentadiene-type phenol resins, triphenylmethane-type phenol resins, novolac-type phenol resins, dicyclopentadiene-type phenol resins, xylene-type phenol resins, and biphenyl-type phenol resins.
胺系硬化劑可為胺化合物。胺化合物可為具有兩個以上的胺基的化合物,可為二聚二胺或其他多胺。The amine hardener may be an amine compound. The amine compound may be a compound having two or more amine groups, and may be dimerized diamine or other polyamines.
異氰酸酯系硬化劑可為異氰酸酯化合物。異氰酸酯化合物可為選自芳香族聚異氰酸酯、脂肪族聚異氰酸酯、脂環式聚異氰酸酯中的一個或多個者。The isocyanate-based hardener may be an isocyanate compound. The isocyanate compound may be one or more selected from aromatic polyisocyanate, aliphatic polyisocyanate, and alicyclic polyisocyanate.
作為芳香族聚異氰酸酯,例如可列舉:1,3-苯二異氰酸酯、1,4-苯二異氰酸酯、2,4-甲苯二異氰酸酯(甲苯二異氰酸酯(toluene diisocyanate,TDI))、2,6-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯(二苯基甲烷二異氰酸酯(methylene diphenyl diisocyanate,MDI))、2,4-二苯基甲烷二異氰酸酯、4,4'-二異氰酸基聯苯、3,3'-二甲基-4,4'-二異氰酸基聯苯、3,3'-二甲基-4,4'-二異氰酸基二苯基甲烷、1,5-萘二異氰酸酯、4,4',4''-三苯基甲烷三異氰酸酯、間異氰酸基苯基磺醯基異氰酸酯、對異氰酸基苯基磺醯基異氰酸酯等。Examples of the aromatic polyisocyanate include 1,3-phenylene diisocyanate, 1,4-benzene diisocyanate, 2,4-toluene diisocyanate (toluene diisocyanate (TDI)), 2,6-toluene diisocyanate Diisocyanate, 4,4'-diphenylmethane diisocyanate (methylene diphenyl diisocyanate (MDI)), 2,4-diphenylmethane diisocyanate, 4,4'-diisocyanate 3,3'-dimethyl-4,4'-diisocyanatobiphenyl, 3,3'-dimethyl-4,4'-diisocyanatodiphenylmethane, 1,5-naphthalene diisocyanate, 4,4',4''-triphenylmethane triisocyanate, m-isocyanatophenylsulfonyl isocyanate, p-isocyanatophenylsulfonyl isocyanate, etc.
作為脂肪族聚異氰酸酯,例如可列舉:伸乙基二異氰酸酯、四亞甲基二異氰酸酯、六亞甲基二異氰酸酯(hexamethylene diisocyanate,HDI)、十二亞甲基二異氰酸酯、1,6,11-十一烷三異氰酸酯、2,2,4-三甲基六亞甲基二異氰酸酯、離胺酸二異氰酸酯、2,6-二異氰酸基己酸甲酯、雙(2-異氰酸基乙基)富馬酸酯、雙(2-異氰酸基乙基)碳酸酯、2-異氰酸基乙基-2,6-二異氰酸基己酸酯等。Examples of the aliphatic polyisocyanate include ethylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate (HDI), dodecamethylene diisocyanate, 1,6,11- Undecane triisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, lysine diisocyanate, methyl 2,6-diisocyanatocaproate, bis(2-isocyanato Ethyl)fumarate, bis(2-isocyanatoethyl)carbonate, 2-isocyanatoethyl-2,6-diisocyanatohexanoate, and the like.
作為脂環式聚異氰酸酯,例如可列舉:異佛爾酮二異氰酸酯(isophorone diisocyanate,IPDI)、4,4'-二環己基甲烷二異氰酸酯(H12-MDI)、伸環己基二異氰酸酯、甲基伸環己基二異氰酸酯(氫化TDI)、雙(2-異氰酸基乙基)-4-環己烯-1,2-二羧酸酯、2,5-降冰片烷二異氰酸酯、2,6-降冰片烷二異氰酸酯等。Examples of the alicyclic polyisocyanate include: isophorone diisocyanate (IPDI), 4,4'-dicyclohexylmethane diisocyanate (H12-MDI), cyclohexylene diisocyanate, methylene diisocyanate, Cyclohexyl diisocyanate (hydrogenated TDI), bis(2-isocyanatoethyl)-4-cyclohexene-1,2-dicarboxylate, 2,5-norbornane diisocyanate, 2,6- Norbornane diisocyanate, etc.
另外,可列舉二異氰酸酯的三羥甲基丙烷加成體、與水反應的縮二脲體、具有異氰脲酸酯環的三聚體。In addition, a trimethylolpropane adduct of diisocyanate, a biuret reacted with water, and a trimer having an isocyanurate ring are exemplified.
作為嵌段化異氰酸酯化合物,只要為含所述異氰酸酯基的化合物中的異氰酸酯基被ε-己內醯胺或甲基乙基酮(methyl ethyl ketone,MEK)肟等保護的含嵌段化異氰酸酯基的化合物即可,並無特別限定。具體而言,可列舉藉由ε-己內醯胺、MEK肟、環己酮肟、吡唑、苯酚等對含所述異氰酸酯基的化合物的異氰酸酯基進行嵌段而成者等。特別是具有異氰脲酸酯環、經MEK肟或吡唑嵌段的六亞甲基二異氰酸酯三聚體於用於本實施方式的情況下,保存穩定性自不必說,對聚醯亞胺或銅等接合材的接著強度或焊料耐熱性優異,因此非常較佳。As the blocked isocyanate compound, as long as the isocyanate group in the isocyanate group-containing compound is protected by ε-caprolactam or methyl ethyl ketone (methyl ethyl ketone, MEK) oxime, etc. It is not particularly limited as long as it is a compound. Specifically, those obtained by blocking the isocyanate group of the isocyanate group-containing compound with ε-caprolactam, MEK oxime, cyclohexanone oxime, pyrazole, phenol, etc. are mentioned. In particular, when a hexamethylene diisocyanate trimer having an isocyanurate ring and blocked by MEK oxime or pyrazole is used in the present embodiment, storage stability goes without saying. A bonding material such as copper or copper is very preferable because of its excellent bonding strength and solder heat resistance.
金屬螯合物系硬化劑可選自鋁螯合物化合物、鈦螯合物化合物、鋯螯合物化合物中的一個或多個。中心金屬可選自鐵、鈷、銦等。The metal chelate hardener can be selected from one or more of aluminum chelate compounds, titanium chelate compounds, and zirconium chelate compounds. The central metal can be selected from iron, cobalt, indium and the like.
硬化劑相對於熱硬化性樹脂100重量份而可使用1重量份~50重量份、較佳為10重量份~40重量份、更佳為20重量份~30重量份。The curing agent can be used in an amount of 1 to 50 parts by weight, preferably 10 to 40 parts by weight, more preferably 20 to 30 parts by weight, based on 100 parts by weight of the thermosetting resin.
藉由調整硬化劑的量,可調整第一保護層32、第二保護層34及第三保護層36的流動性及黏性。例如,可為第二保護層34的硬化劑的含量最多,第三保護層36的硬化劑的含量次多,第一保護層32完全不包含硬化劑或以第三保護層36以下的量含有硬化劑。By adjusting the amount of the curing agent, the fluidity and viscosity of the first
第一保護層32、第二保護層34及第三保護層36可更包含填料。填料較佳為絕緣性,例如,可選自無機填料、磷系填料、氮系填料、氟系填料及高分子填料。作為填料,可使用一種或多種。The
作為無機填料,可列舉:二氧化矽、中空二氧化矽、多孔質二氧化矽、雲母、滑石、高嶺土、黏土、水滑石、矽灰石、硬矽鈣石、氮化矽、氮化硼、氮化鋁、磷酸氫鈣、磷酸鈣、玻璃片、水合玻璃、鈦酸鈣、海泡石、硫酸鎂、氫氧化鋁、氫氧化鎂、氫氧化鋯、氫氧化鋇、氫氧化鈣、氧化鈦、氧化錫、氧化鋁、氧化鎂、氧化鋯、氧化鋅、氧化鉬、氧化銻、氧化鎳、碳酸鋅、碳酸鎂、碳酸鈣、碳酸鋇、硼酸鋅、硼酸鋁、無機離子補充劑(作為例子,東亞合成公司製造的IXE(註冊商標))。Examples of inorganic fillers include silica, hollow silica, porous silica, mica, talc, kaolin, clay, hydrotalcite, wollastonite, xonotlite, silicon nitride, boron nitride, Aluminum nitride, calcium hydrogen phosphate, calcium phosphate, glass flakes, hydrated glass, calcium titanate, sepiolite, magnesium sulfate, aluminum hydroxide, magnesium hydroxide, zirconium hydroxide, barium hydroxide, calcium hydroxide, titanium oxide , tin oxide, aluminum oxide, magnesium oxide, zirconium oxide, zinc oxide, molybdenum oxide, antimony oxide, nickel oxide, zinc carbonate, magnesium carbonate, calcium carbonate, barium carbonate, zinc borate, aluminum borate, inorganic ion extenders (as examples , IXE (registered trademark) manufactured by Toagosei Co., Ltd.).
作為磷系填料,可列舉:磷酸三聚氰胺、聚磷酸三聚氰胺、磷酸胍、聚磷酸胍、磷酸銨、聚磷酸銨、磷酸醯胺銨、聚磷酸醯胺銨、磷酸胺甲酸酯、聚磷酸胺甲酸酯等(聚)磷酸鹽系化合物、有機磷酸酯化合物、磷腈化合物、膦酸化合物、二乙基次膦酸鋁、甲基乙基次膦酸鋁、二苯基次膦酸鋁、乙基丁基次膦酸鋁、甲基丁基次膦酸鋁、聚乙烯次膦酸鋁等次膦酸化合物、氧化膦化合物、磷烷化合物、磷醯胺化合物等。Examples of phosphorus-based fillers include: melamine phosphate, melamine polyphosphate, guanidine phosphate, guanidine polyphosphate, ammonium phosphate, ammonium polyphosphate, ammonium amide phosphate, ammonium amide polyphosphate, amine formate phosphate, amine formamide polyphosphate (poly) phosphate compounds such as esters, organic phosphate compounds, phosphazene compounds, phosphonic acid compounds, aluminum diethylphosphinate, aluminum methylethylphosphinate, aluminum diphenylphosphinate, ethyl Phosphinic acid compounds such as aluminum butyl phosphinate, aluminum methyl butyl phosphinate, aluminum polyvinyl phosphinate, phosphine oxide compounds, phosphine compounds, phosphoramide compounds, and the like.
作為氮系填料,可列舉:苯並胍胺、三聚氰胺、蜜白胺、蜜勒胺、三聚二氰乙腈、三聚氰胺氰脲酸酯、氰脲酸化合物、異氰脲酸化合物、三唑系化合物、四唑化合物、重氮化合物、脲等氮系填料。Examples of nitrogen-based fillers include benzoguanamine, melamine, melam, melem, melamine acetonitrile, melamine cyanurate, cyanuric acid compounds, isocyanuric acid compounds, and triazole-based compounds. , tetrazole compounds, diazo compounds, urea and other nitrogen-based fillers.
作為氟系填料,可列舉:聚四氟乙烯粉末或其改質物、四氟乙烯-全氟烷基乙烯基醚粉末、四氟乙烯-乙烯粉末、四氟乙烯-六氟丙烯粉末、四氟乙烯-偏二氟乙烯粉末、四氟乙烯-六氟丙烯-全氟烷基乙烯基醚粉末、聚氯三氟乙烯粉末、氯三氟乙烯-乙烯粉末、氯三氟乙烯-偏二氟乙烯粉末、聚偏二氟乙烯粉末、聚氟乙烯粉末等。Examples of fluorine-based fillers include: polytetrafluoroethylene powder or its modified product, tetrafluoroethylene-perfluoroalkyl vinyl ether powder, tetrafluoroethylene-ethylene powder, tetrafluoroethylene-hexafluoropropylene powder, tetrafluoroethylene -Vinylidene fluoride powder, tetrafluoroethylene-hexafluoropropylene-perfluoroalkyl vinyl ether powder, polychlorotrifluoroethylene powder, chlorotrifluoroethylene-ethylene powder, chlorotrifluoroethylene-vinylidene fluoride powder, Polyvinylidene fluoride powder, polyvinyl fluoride powder, etc.
作為高分子填料,除了可列舉聚乙烯粉末、聚丙烯酸酯粉末、環氧樹脂粉末、聚醯胺粉末、聚醯亞胺粉末、聚胺基甲酸酯粉末、液晶聚合物珠、聚矽氧烷粉末等以外,亦可列舉使用矽酮、丙烯酸、苯乙烯丁二烯橡膠、丁二烯橡膠等的多層結構的核殼等。Examples of polymer fillers include polyethylene powder, polyacrylate powder, epoxy resin powder, polyamide powder, polyimide powder, polyurethane powder, liquid crystal polymer beads, polysiloxane In addition to the powder etc., the core-shell etc. of the multilayer structure using silicone, acrylic, styrene-butadiene rubber, butadiene rubber, etc. are mentioned.
填料的平均粒徑D 50可為0.01 μm~100 μm,較佳為可為0.02 μm~40 μm,更佳為可為0.05 μm~20 μm。 The average particle diameter D 50 of the filler may be 0.01 μm-100 μm, preferably 0.02 μm-40 μm, more preferably 0.05 μm-20 μm.
第二保護層34及第三保護層36可包含0.1重量%~30重量%、較佳為1重量%~25重量%、更佳為5重量%~20重量%的填料。藉由使填料為所述範圍,可將指數X、指數Y及/或指數Z(流動性)調整為接近適當的範圍。The second
第一保護層32可不包含填料、或者即使包含填料,亦可以較第二保護層34及第三保護層36而言更少的質量濃度包含填料。例如,於第一保護層32包含填料的情況下,相對於熱硬化性樹脂100重量份,可包含0.01重量份~1重量份,較佳為可包含0.01重量份~0.5重量份,更佳為可包含0.01重量份~0.1重量份。The first
作為一例,可為第二保護層34的填料的含量最多,第三保護層36的填料的含量次多,第一保護層32完全不包含填料或以第三保護層36以下的質量濃度包含填料。As an example, the content of the filler in the second
其結果,雖然保護片38包含填料,但是保護片38的第二面側的填料的質量濃度較第一面側而言更大。藉此,可抑制第一保護層32(即第一面側)的黏性(黏著性),亦增大流動性。另外,藉由調整第一保護層32的填料量及/或硬化劑量,可將保護片38的第一面的利用探針黏性試驗所得的黏著力調整為規定值以下。另外,藉由調整填料量及/或硬化劑量,容易將流動性調整為第一保護層32、第三保護層36及第二保護層34的順序。As a result, although the
另外,作為另一例,可為第二保護層34及第三保護層36以同量包含填料,第一保護層32完全不包含填料或以第二保護層34及第三保護層36以下的質量濃度包含填料。代替該些,可為第三保護層36的填料的含量最多,第二保護層34的填料的含量次多,第一保護層32完全不包含填料或以第三保護層36以下的質量濃度包含填料。In addition, as another example, the second
於將保護片38整體設為100重量%的情況下,填料的含量可為0.1重量%~30.0重量%,較佳為可為1.0重量%~9.8重量%,更佳為可為3.5重量%~8.5重量%。若保護片38整體的填料量較該範圍而言更低,則流動性變得過高,若保護片38整體的填料量較該範圍而言更高,則於冷熱循環執行時保護層上產生裂紋,可能成為外觀不良的原因。於保護片38整體中,填料的含量只不過是追加的改良事項,而非必需事項。When the
第一保護層32、第二保護層34及第三保護層36亦可更包含熱塑性樹脂。作為熱塑性樹脂,較佳為例如自聚酯、丙烯酸系樹脂、聚醚、胺基甲酸酯系樹脂、苯乙烯彈性體、聚碳酸酯、丁二烯橡膠、聚醯胺、酯醯胺系樹脂、聚異戊二烯、及纖維素中選擇一種以上。於包含熱塑性樹脂的情況下,較佳為於第一保護層32、第二保護層34及/或第三保護層36的各層中設為5重量%~40重量%的含量。The first
第一保護層32、第二保護層34及第三保護層36中可更包含添加劑。例如,作為添加劑,可使用著色劑(例如顏料、染料、或碳黑、碳奈米管、石墨烯、富勒烯等碳粉末)、阻燃劑、抗黏連劑、金屬鈍化劑、增稠劑、分散劑、矽烷偶合劑、防鏽劑、銅毒抑制劑(copper inhibitor)、還原劑、抗氧化劑、黏著賦予樹脂、塑化劑、紫外線吸收劑、消泡劑、及調平調整劑等中的一種或多種。The first
圖4表示本實施方式的保護片38的另一例。如圖4所示,保護片38可僅包含第一保護層32及第二保護層34,可不包含第三保護層36。於此情況下,第一保護層32及第二保護層34的結構及材料等可如所述中說明般。FIG. 4 shows another example of the
作為另一例,第一保護層32、第二保護層34及第三保護層36中的一個或多個亦可設置多層。例如,保護片38亦可具有一個第一保護層32、一個第二保護層34、以及被該些夾持的多個第三保護層36。As another example, one or more of the
保護片38亦可視需要包含其他層。例如,保護片38亦可更具有於貼附於電路基板10後剝離的剝離層等。於設置剝離層的情況下,可設置於第二保護層34的更靠上側(第一保護層32的相反側)處。The
圖5表示本實施方式的電子器件封裝100的製造方法的流程的一例。電子器件封裝100可藉由執行S100~S300中的至少一部分來製造。為了便於說明,依序說明S100~S300,但該些處理亦可按照其他順序執行、及/或至少一部分亦可並行執行。FIG. 5 shows an example of the flow of the manufacturing method of the
於S100中,製造用於形成保護層30的保護片38。保護片38可為於圖2~圖4中說明的保護片。In S100 , the
保護片38的製造方法並無特別限定,例如可列舉如下方法等:對將形成保護片38的各層(第一保護層32、第二保護層34、第三保護層36)的所述熱硬化樹脂等材料溶解於溶媒等中而得的組成物依次進行塗佈、乾燥,形成積層結構、或將預先硬化或半硬化的該組成物層壓。作為塗佈方法,例如可列舉:凹版塗佈方式、吻合式塗佈方式、模塗方式、唇塗方式、缺角輪塗佈方式、刮板方式、輥塗方式、刮刀塗佈方式、噴霧塗佈方式、棒塗方式、旋轉塗佈方式、浸塗方式、或各種印刷方式等。The method for producing the
接下來,於S200中,於安裝基板12上形成由保護片38形成的保護層30。例如,首先準備安裝基板12。安裝基板12可為於表面設置有導電電路的電路基板10上安裝電子器件20等者。於安裝基板12,以第一保護層32(第一面側)朝向電子器件20等側的方式配置S100中製造的保護片38。Next, in S200 , the
圖6表示圖5的流程中的S200的一例。如圖示般,可於以第一保護層32側與電子器件20等面對面的方式配置保護片38的基礎上,將保護片38黏貼於安裝基板12。FIG. 6 shows an example of S200 in the flow of FIG. 5 . As shown in the figure, after arranging the
亦可於配置保護片38後將其熱壓於安裝基板12。藉由熱壓,可將保護片38的各保護層的未硬化或半硬化的熱硬化性樹脂硬化。此處,於熱硬化性樹脂完全硬化的情況下,保護片38成為保護層30。於保護片38具有剝離片的情況下,可於熱壓之後將剝離片自保護片38去除。The
熱壓可於減壓下或真空下進行。藉此,可提高第一保護層32對安裝基板12的密接度。熱壓可於100℃~220℃、較佳為120℃~200℃、更佳為140℃~180℃下,以1分鐘~120分鐘、較佳為1分鐘~40分鐘、更佳為1分鐘~10分鐘且0.1 MPa~10 MPa、較佳為0.5 MPa~3 MPa、更佳為1 MPa~2 MPa的條件進行。於進行追加的加熱的情況下,可於與所述熱壓相同的溫度條件等下進行。Hot pressing can be performed under reduced pressure or vacuum. Thereby, the adhesion of the first
若進行熱壓,則構成保護片38的各層於完全硬化之前軟化,而流動至電路基板10與電子器件20等的角的凹部或凸塊等連接構件24的側面。特別是,流動性較其他層而言更高的第一保護層32充分地保護流動至該些部位而不易形成保護層30的部分。藉此,可防止連接構件24與其他導電體的接觸或漏電。When heat pressing is performed, each layer constituting the
另一方面,流動性比較低的第二保護層34及第三保護層36即使藉由熱壓亦不會大幅移動,因此於電子器件20等整體上殘存一定量。藉此,可更可靠地消除於保護層30的一部分(例如,電子器件20等的角部)厚度不足的情況。On the other hand, since the second
圖7表示形成有保護層30的安裝基板12的一例。如所說明般,藉由將保護片38硬化,形成保護層30,對安裝基板12的整個表面進行絕緣保護。FIG. 7 shows an example of the mounting
再者,於所述說明中,列舉使用不包含剝離片的保護片38的例子,但並不限於此。例如,可使用於第二保護層34側具有剝離片的保護片38進行熱壓,於熱壓後將剝離片剝離。In addition, in the said description, the example which used the
接下來,於S300中,於保護層30上形成導電層40。導電層40可形成於形成有保護層30的區域的一部分或整體。導電層40可藉由將金屬自含金屬片46轉印至安裝基板12來形成。Next, in S300 , a
圖8表示含金屬片46的一例。含金屬片46於剝離片42上形成有金屬材料層44。FIG. 8 shows an example of the metal-containing
剝離片42可使用之後能夠剝離的膜狀的剝離基材或具有緩衝性的剝離樹脂。剝離片42可包括剝離基材及/或剝離樹脂的單層或多層。For the
剝離基材是對單面或兩面賦予了脫模性的膜狀的基材。剝離基材理想的是150℃下的拉伸斷裂應變未滿50%的片。作為剝離基材,例如可列舉選擇聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚氟乙烯、聚偏二氟乙烯、硬質聚氯乙烯、聚偏二氯乙烯、尼龍、聚醯亞胺、聚苯乙烯、聚乙烯基醇、乙烯-乙烯基醇共聚物、聚碳酸酯、聚丙烯腈、聚丁烯、軟質聚氯乙烯、聚偏二氟乙烯、聚乙烯、聚丙烯、聚胺基甲酸酯樹脂、乙烯乙酸乙烯基酯共聚物、聚乙酸乙烯基酯等塑膠片等、玻璃紙、道林紙、牛皮紙、塗料紙等紙類、各種不織布、合成紙、金屬箔、或者該些組合而成的複合膜中的一種或多種者。The peeling base material is a film-like base material provided with release properties on one side or both sides. The peeling base material is preferably a sheet having a tensile breaking strain at 150° C. of less than 50%. As the release base material, for example, polyethylene terephthalate, polyethylene naphthalate, polyvinyl fluoride, polyvinylidene fluoride, rigid polyvinyl chloride, polyvinylidene chloride, nylon, polyvinylidene Amide, polystyrene, polyvinyl alcohol, ethylene-vinyl alcohol copolymer, polycarbonate, polyacrylonitrile, polybutene, soft polyvinyl chloride, polyvinylidene fluoride, polyethylene, polypropylene, Polyurethane resin, ethylene vinyl acetate copolymer, polyvinyl acetate and other plastic sheets, cellophane, Dowling paper, kraft paper, coated paper and other paper, various non-woven fabrics, synthetic paper, metal foil, or One or more of these combined composite films.
剝離樹脂是具有對電子器件20等的形狀的追隨性、亦具有脫模性的樹脂。即,剝離樹脂是脫模性緩衝構件於熱壓等之後能夠剝離的樹脂。剝離樹脂理想的是150℃下的拉伸斷裂應變為50%以上。另外,剝離樹脂較佳為於熱壓時進行熔融。The release resin is a resin that has conformability to the shape of the
作為剝離樹脂,例如可列舉選擇聚乙烯、聚丙烯、聚醚碸、聚苯硫醚、聚苯乙烯、聚甲基戊烯、聚對苯二甲酸丁二酯、環狀烯烴聚合物、及矽酮中的一種或多種者。就兼顧埋入性與剝離性的觀點而言,特佳為聚丙烯、聚甲基戊烯、聚對苯二甲酸丁二酯、矽酮。Examples of release resins include polyethylene, polypropylene, polyethersulfide, polyphenylene sulfide, polystyrene, polymethylpentene, polybutylene terephthalate, cyclic olefin polymers, and silicone resins. One or more of ketones. From the viewpoint of both embedding property and detachability, polypropylene, polymethylpentene, polybutylene terephthalate, and silicone are particularly preferable.
金屬材料層44可由包含熱硬化性樹脂及導電填料的導電膏形成。例如,可藉由在剝離片42上塗佈導電膏及將溶劑加以乾燥來形成金屬材料層44。導電膏中的熱硬化性樹脂較佳為未硬化或半硬化狀態。作為塗佈方法,可列舉所述各保護層的組成物的塗佈方法或網版印刷等方法。The
作為熱硬化性樹脂,可使用與第一保護層~第三保護層的形成中使用的樹脂相同的樹脂。As the thermosetting resin, the same resin as that used for the formation of the first to third protective layers can be used.
作為導電填料,可列舉:金屬粒子、碳粒子、導電性樹脂粒子等。導電填料可包含金屬粒子作為必需成分,除此以外亦可選擇一種或多種碳粒子等其他成分而包含。Examples of the conductive filler include metal particles, carbon particles, conductive resin particles, and the like. The conductive filler may contain metal particles as an essential component, and other components such as one or more carbon particles may also be selected and included.
作為金屬粒子,例如可列舉:金、鉑、銀、銅、鎳、鋁、鐵或該些的合金等,但就價格與導電性的方面而言,較佳為銅。另外,作為金屬粒子,可為包括包含金屬的核體、與包覆該核體且包含與核體不同的金屬的包覆層的粒子。作為核體及包覆層,可使用所述列舉的金屬。作為一例,可列舉具有包含銅的核體與包含銀的包覆層的銀塗佈銅粒子等。Examples of metal particles include gold, platinum, silver, copper, nickel, aluminum, iron, or alloys thereof, but copper is preferred in terms of price and conductivity. In addition, the metal particles may include a core containing a metal, and a coating layer covering the core and containing a metal different from the core. As the core body and the cladding layer, the metals listed above can be used. As an example, the silver-coated copper particle etc. which have the nucleus body which consists of copper, and the coating layer which consists of silver are mentioned.
作為碳粒子,例如可列舉選擇乙炔黑、科琴黑、爐黑、碳奈米管、碳奈米纖維、石墨、富勒烯、碳奈米壁、及石墨烯等中的一種或多種者。作為導電性樹脂粒子,例如可列舉選擇聚(3,4-乙烯二氧噻吩)、聚乙炔、及聚噻吩等中的一種或多種者。Examples of carbon particles include one or more selected from acetylene black, Ketjen black, furnace black, carbon nanotubes, carbon nanofibers, graphite, fullerenes, carbon nanowalls, and graphene. As the conductive resin particles, one or more selected from poly(3,4-ethylenedioxythiophene), polyacetylene, polythiophene, and the like can be cited, for example.
導電填料的平均粒徑D
50較佳為1 μm~100 μm左右,更佳為3 μm~75 μm左右,進而佳為5 μm~50 μm左右。導電填料的平均粒徑可藉由雷射繞射法或散射法等來測定,例如假定與該填料粒子集合體的投影面積相等的圓時的直徑的平均值可作為平均粒徑來獲得。藉由將導電填料的平均粒徑設為所述範圍,可進一步提高之後形成的導電層40的電磁波屏蔽效果。另外,例如由於與熱硬化性樹脂混合時的流動性良好,因此導電層40的成形性提高。
The average particle diameter D 50 of the conductive filler is preferably about 1 μm˜100 μm, more preferably about 3 μm˜75 μm, and still more preferably about 5 μm˜50 μm. The average particle size of the conductive filler can be measured by a laser diffraction method or a scattering method, for example, the average value of the diameters of a circle equal to the projected area of the aggregate of filler particles can be obtained as the average particle size. By setting the average particle size of the conductive filler within the above-mentioned range, the electromagnetic wave shielding effect of the
導電填料的形狀可為球狀、針狀、鱗片狀、片狀、樹枝狀、葡萄粒狀、纖維狀、或板狀等任意形狀。金屬材料層44中的導電填料的含量並無特別限定,相對於熱硬化性樹脂100重量份,較佳為100重量份~1500重量份,更佳為100重量份~1000重量份。藉此,與導電性粒子的種類無關,可對導電層40賦予必要且充分的導電性,且可充分提高電磁波屏蔽效果。另外,就提高包含熱硬化性樹脂與導電填料的組成物的流動性、更容易形成金屬材料層44而言亦較佳。The shape of the conductive filler can be any shape such as spherical shape, needle shape, scale shape, flake shape, dendritic shape, grape shape, fiber shape, or plate shape. The content of the conductive filler in the
金屬材料層44可更包含熱塑性樹脂。作為熱塑性樹脂,可使用與能夠於第一保護層~第三保護層中使用的樹脂相同的樹脂。The
金屬材料層44可包含其他添加劑。例如,作為添加劑,可使用交聯劑、著色劑、阻燃劑、填充劑、潤滑劑、抗黏連劑、金屬鈍化劑、增稠劑、分散劑、矽烷偶合劑、防鏽劑、銅毒抑制劑、還原劑、抗氧化劑、黏著賦予樹脂、塑化劑、紫外線吸收劑、消泡劑、及調平調整劑等中的一種或多種。The
作為交聯劑,可列舉與熱硬化性樹脂的官能基發生交聯反應的化合物。例如,作為交聯劑,可使用酚系硬化劑、胺系硬化劑、異氰酸酯系硬化劑、環氧系硬化劑、氮丙啶系硬化劑、及金屬螯合物系硬化劑等中的一種或多種。As a crosslinking agent, the compound which crosslinks with the functional group of a thermosetting resin is mentioned. For example, as the crosslinking agent, one of phenol-based curing agents, amine-based curing agents, isocyanate-based curing agents, epoxy-based curing agents, aziridine-based curing agents, and metal chelate-based curing agents can be used or Various.
作為著色劑,例如可使用有機顏料、碳黑、群青、紅鐵氧化物、氧化鋅、氧化鈦、石墨、及染料等中的一種或多種。作為阻燃劑,例如可使用含鹵素阻燃劑、含磷阻燃劑、含氮阻燃劑、及無機阻燃劑等中的一種或多種。作為填充劑,例如可使用玻璃纖維、二氧化矽、滑石、及陶瓷等中的一種或多種。As the colorant, for example, one or more of organic pigments, carbon black, ultramarine blue, red iron oxide, zinc oxide, titanium oxide, graphite, and dyes can be used. As the flame retardant, for example, one or more of halogen-containing flame retardants, phosphorus-containing flame retardants, nitrogen-containing flame retardants, and inorganic flame retardants can be used. As the filler, for example, one or more of glass fiber, silica, talc, and ceramics can be used.
作為潤滑劑,例如可使用脂肪酸酯、烴樹脂、石蠟、高級脂肪酸、脂肪酸醯胺、脂肪族醇、金屬皂、及改質矽酮等中的一種或多種。作為抗黏連劑,例如可使用碳酸鈣、二氧化矽、聚甲基矽倍半氧烷、及矽酸鋁鹽等中的一種或多種。As the lubricant, for example, one or more of fatty acid ester, hydrocarbon resin, paraffin, higher fatty acid, fatty acid amide, aliphatic alcohol, metal soap, and modified silicone can be used. As the anti-blocking agent, for example, one or more of calcium carbonate, silicon dioxide, polymethylsilsesquioxane, and aluminum silicate can be used.
再者,金屬材料層44可為金屬箔。於此情況下,金屬箔可為藉由鍍敷等將與導電填料中例示的金屬相同的金屬形成在剝離片42上而成者。Furthermore, the
圖9表示使用了含金屬片46的S300的一例。如圖示般,將含金屬片46的金屬材料層44側配置並貼附於保護層30。接下來,藉由對含金屬片46進行熱壓,使金屬材料層44的熱硬化性樹脂硬化,藉此形成導電層40。之後,去除剝離片42。藉此,製造如圖1所示的電子器件封裝100。FIG. 9 shows an example of S300 using the metal-containing
熱壓可於減壓下或真空下進行。藉此,可提高金屬材料層44對安裝基板12的密接度。熱壓可於100℃~220℃(較佳為120℃~180℃)下,以1分鐘~120分鐘(較佳為1分鐘~60分鐘)、0.1 MPa~10 MPa(較佳為0.5 MPa~3 MPa)的條件進行。Hot pressing can be performed under reduced pressure or vacuum. Thereby, the adhesion of the
再者,於S300中,可不使用含金屬片46而藉由其他方法形成導電層40。例如,導電層40可藉由利用鍍敷、蒸鍍、或濺鍍(以下,亦稱為「鍍敷等」)堆積金屬來形成。作為用於鍍敷等的金屬,例如可列舉金、鉑、銀、銅、鎳、鋁、鐵或該些的合金。作為另一例,導電層40可將導電膏(例如,能夠於金屬材料層44中使用者)塗敷或噴霧塗佈於保護層30或(熱壓前的)第二保護層34上,將其硬化而形成。Furthermore, in S300 , the
於S300之後,視需要可進行將電子器件封裝100單片化的步驟。例如,可於與產品區域對應的位置將電子器件封裝100於X方向及Y方向上進行切割,獲得單獨的產品。另外,不執行S300,可使用不具有導電層40者作為電子器件封裝100。After S300 , a step of singulating the
如所述般,藉由本實施方式,利用S100~S300的製程,使用具有規定的結構、物性的保護片38,於安裝基板12上形成保護層30。藉此,於電子器件20等的角部等保護層30過度流動而膜厚容易變薄的部分或保護層30無法充分地流動的部分均可以充分的膜厚形成保護層30。另外,藉由本實施方式,亦可防止當貼合保護片38時第一面側接著於電路基板10等而覆液。As described above, according to the present embodiment, the
保護層30中可包含源自保護片38的層結構。例如,於保護片38為三層結構的情況下,保護層30的至少一部分可具有源自第一保護層32~第三保護層36各者的三層結構。特別是,於電路基板10與電子器件20等相接的角凹部中,保護層30的膜厚變厚,保護片38的層結構容易殘存。另一方面,於保護層30的膜厚變薄的電子器件20等的角部,亦可不殘存保護片38的層結構。The
以下,藉由實施例對本實施方式的例子進行說明。Hereinafter, examples of this embodiment will be described with reference to examples.
[實施例]
[第一保護層用組成物A1]
製備具有以下的組成的第一保護層32用的組成物A1。
聚胺基甲酸酯樹脂(酸價:5 mgKOH/g,重量平均分子量:54,000,Tg:-7℃,東洋化工(TOYO CHEM)製造) 100重量份
環氧化合物(日鐵化學&材料(NIPPON STEEL Chemical & Material)公司製造 YDF-2005RD) 20重量份
溶媒(甲基乙基酮) 20重量份
[Example]
[Composition A1 for the first protective layer]
Composition A1 for the first
[第一保護層用組成物A2]
除了追加6重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)以外,調整具有與組成物A1相同的組成的第一保護層32用的組成物A2。
[Composition A2 for the first protective layer] Adjusted to have the same composition as Composition A1 except that 6 parts by weight of silicon dioxide (SO-C6, D 50 manufactured by Admatechs; 2.0 μm) was added Composition A2 for the first
[第一保護層用組成物A3]
除了追加12重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)以外,調整具有與組成物A1相同的組成的第一保護層32用的組成物A3。
[Composition A3 for the first protective layer] Adjusted to have the same composition as the composition A1 except that 12 parts by weight of silicon dioxide (SO-C6, D 50 manufactured by Admatechs; 2.0 μm) was added Composition A3 for the first
[第一保護層用組成物A4]
除了追加15重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)以外,調整具有與組成物A1相同的組成的第一保護層32用的組成物A4。
[Composition A4 for the first protective layer] Adjusted to have the same composition as Composition A1 except for adding 15 parts by weight of silicon dioxide (SO-C6, D 50 manufactured by Admatechs; 2.0 μm) Composition A4 for the first
[第一保護層用組成物A5]
除了追加55重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)以外,調整具有與組成物A1相同的組成的第一保護層32用的組成物A5。
[Composition A5 for the first protective layer] Adjusted to have the same composition as that of Composition A1 except that 55 parts by weight of silicon dioxide (SO-C6, D 50 manufactured by Admatechs; 2.0 μm) was added Composition A5 for the first
[第一保護層用組成物A6]
除了追加1.5重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)以外,調整具有與組成物A1相同的組成的第一保護層32用的組成物A6。
[Composition A6 for the first protective layer] Adjusted to have the same composition as the composition A1 except that 1.5 parts by weight of silicon dioxide (SO-C6, D 50 manufactured by Admatechs; 2.0 μm) was added Composition A6 for the first
[第一保護層用組成物A7]
除了追加20重量份的二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)以外,調整具有與組成物A1相同的組成的第一保護層32用的組成物A7。
[Composition A7 for the first protective layer] Adjusted to have the same composition as the composition A1 except for adding 20 parts by weight of silicon dioxide (SO-C6, D 50 manufactured by Admatechs; 2.0 μm) Composition A7 for the first
[第二保護層用組成物B1]
製備具有以下組成的第二保護層34用的組成物B1。
聚胺基甲酸酯樹脂(酸價:5 mgKOH/g,重量平均分子量:54,000,Tg:-7℃,東洋化工(TOYO CHEM)製造) 100重量份
環氧化合物(日鐵化學&材料(NIPPON STEEL Chemical & Material)公司製造 YDF-2001) 20重量份
二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm) 13.6重量份(以除去溶媒後的固體成分計為10重量%)
溶媒(甲基乙基酮) 20重量份
[Composition B1 for Second Protective Layer] Composition B1 for the second
[第二保護層用組成物B2]
除了將二氧化矽變更為滑石(富士滑石公司製造 FH104 D
50;4.0 μm)24.4重量份以外,製備具有與組成物C1相同的組成的第二保護層34用的組成物B2。
[Composition B2 for Second Protective Layer] A second
[第二保護層用組成物B3]
除了將二氧化矽的含量變更為35.0重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B3。
[Composition B3 for the second protective layer]
Composition B3 for the second
[第二保護層用組成物B4]
除了完全不追加二氧化矽以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B4。
[Composition B4 for the second protective layer]
Composition B4 for the second
[第二保護層用組成物B5]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為0.10重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B5。
[Composition B5 for the second protective layer] A composition B1 having Composition B5 for the second
[第二保護層用組成物B6]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為0.15重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B6。
[Composition B6 for the second protective layer] Except that the content of silicon dioxide (SO-C6 manufactured by Admatechs, D 50 ; 2.0 μm) was changed to 0.15 parts by weight, a composition B1 having Composition B6 for the second
[第二保護層用組成物B7]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為55重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B7。
[Composition B7 for the second protective layer] A composition B1 having Composition B7 for the second
[第二保護層用組成物B8]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為20重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B8。
[Composition B8 for the second protective layer] A composition B1 having Composition B8 for the second
[第二保護層用組成物B9]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為15重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B9。
[Composition B9 for the second protective layer] Except that the content of silicon dioxide (SO-C6 manufactured by Admatechs, D 50 ; 2.0 μm) was changed to 15 parts by weight, a composition B1 having Composition B9 for the second
[第二保護層用組成物B10]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為1.5重量份以外,製備具有與組成物B1相同的組成的第二保護層34用的組成物B10。
[Composition B10 for the second protective layer] Except that the content of silicon dioxide (SO-C6 manufactured by Admatechs, D 50 ; 2.0 μm) was changed to 1.5 parts by weight, a composition having Composition B10 for the second
[第三保護層用組成物C1]
製備具有以下組成的第三保護層36用的組成物C1。
聚胺基甲酸酯樹脂(酸價:5 mgKOH/g,重量平均分子量:54,000,Tg:-7℃,東洋化工(TOYO CHEM)製造) 100重量份
環氧化合物(日鐵化學&材料(NIPPON STEEL Chemical & Material)公司製造 YDF-170) 20重量份
二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm) 13.6重量份
溶媒(甲基乙基酮) 20重量份
[第三保護層用組成物C2]
除了完全不追加二氧化矽以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C2。
[第三保護層用組成物C3]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為1.5重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C3。
[第三保護層用組成物C4]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為20重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C4。
[第三保護層用組成物C5]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為15重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C5。
[第三保護層用組成物C6]
除了將二氧化矽(阿德瑪科技(Admatechs)公司製造 SO-C6,D
50;2.0 μm)的含量變更為55重量份以外,製備具有與組成物C1相同的組成的第三保護層36用的組成物C6。
[Composition C1 for Third Protective Layer] Composition C1 for the third
[單層A1的製造]
將組成物A1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚15 μm的與第一保護層32對應的單層A1。
[Manufacturing of single layer A1]
Composition A1 was coated on a release sheet. Thereafter, it was heated at 120° C. for 5 minutes to perform drying and semi-curing to form a single layer A1 corresponding to the first
[單層B1的製造]
將組成物B1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚45 μm的與第二保護層34對應的單層B1。
[Manufacture of single layer B1]
Composition B1 was coated on a release sheet. Thereafter, it was heated at 120° C. for 5 minutes to perform drying and semi-curing to form a single layer B1 corresponding to the second
[單層C1的製造]
將組成物C1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚60 μm的與第三保護層36對應的單層C1。
[Manufacture of single layer C1]
Composition C1 was coated on a release sheet. Thereafter, it was heated at 120° C. for 5 minutes to perform drying and semi-curing to form a single layer C1 corresponding to the third
[保護片H1的製造]
將組成物A1塗佈於剝離片上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚15 μm的第一保護層32。於第一保護層32上塗佈組成物1C。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚60 μm的第三保護層36。其後,將組成物B1塗佈於第三保護層36上。其後,於120℃下加熱5分鐘,進行乾燥及半硬化,形成膜厚45 μm的第二保護層34。如此,形成包含第一保護層32、第三保護層36及第二保護層的保護片H1。
[Manufacture of protective sheet H1]
Composition A1 was coated on a release sheet. Thereafter, it was heated at 120° C. for 5 minutes to perform drying and semi-curing to form the first
[保護片H2的製造] 除了使用組成物B2代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H2。 [Manufacture of protective sheet H2] Protective sheet H2 was produced by the same method as protective sheet H1 except that composition B2 was used instead of composition B1.
[保護片H3的製造] 除了使用組成物B3代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H3。 [Manufacture of protective sheet H3] Protective sheet H3 was produced by the same method as protective sheet H1 except that composition B3 was used instead of composition B1.
[保護片H4的製造] 除了使用組成物B4代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H4。 [Manufacture of protective sheet H4] Protective sheet H4 was produced by the same method as protective sheet H1 except that composition B4 was used instead of composition B1.
[保護片H5的製造] 除了使用組成物B5代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H5。 [Manufacture of protective sheet H5] Protective sheet H5 was produced by the same method as protective sheet H1 except that composition B5 was used instead of composition B1.
[保護片H6的製造] 除了使用組成物B6代替組成物B1以外,藉由與保護片H1相同的方法製造保護片H6。 [Manufacture of protective sheet H6] Protective sheet H6 was produced by the same method as protective sheet H1 except that composition B6 was used instead of composition B1.
[保護片H7的製造] 除了使用組成物A5代替組成物A1、使用組成物B7代替組成物B1、使用組成物C6代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H7。 [Manufacture of protective sheet H7] Protective sheet H7 was produced by the same method as protective sheet H1, except that composition A5 was used instead of composition A1, composition B7 was used instead of composition B1, and composition C6 was used instead of composition C1.
[保護片H8的製造] 除了使用組成物A2代替組成物A1以外,藉由與保護片H1相同的方法製造保護片H8。 [Manufacture of protective sheet H8] Protective sheet H8 was produced by the same method as protective sheet H1 except that composition A2 was used instead of composition A1.
[保護片H9的製造] 除了使用組成物A3代替組成物A1以外,藉由與保護片H1相同的方法製造保護片H9。 [Manufacture of protective sheet H9] Protective sheet H9 was produced by the same method as protective sheet H1 except that composition A3 was used instead of composition A1.
[保護片H10的製造] 除了使用組成物A4代替組成物A1以外,藉由與保護片H1相同的方法製造保護片H10。 [Manufacture of protective sheet H10] Protective sheet H10 was produced by the same method as protective sheet H1 except that composition A4 was used instead of composition A1.
[保護片H11的製造] 除了使用組成物B4代替組成物B1、使用組成物C2代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H11。 [Manufacture of protective sheet H11] Protective sheet H11 was produced by the same method as protective sheet H1, except that composition B4 was used instead of composition B1, and composition C2 was used instead of composition C1.
[保護片H12的製造] 除了使用組成物A6代替組成物A1、使用組成物B10代替組成物B1、使用組成物C3代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H12。 [Manufacture of protective sheet H12] Protective sheet H12 was produced by the same method as protective sheet H1, except that composition A6 was used instead of composition A1, composition B10 was used instead of composition B1, and composition C3 was used instead of composition C1.
[保護片H13的製造] 除了使用組成物A7代替組成物A1、使用組成物B8代替組成物B1、使用組成物C4代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H13。 [Manufacture of protective sheet H13] Protective sheet H13 was produced by the same method as protective sheet H1, except that composition A7 was used instead of composition A1, composition B8 was used instead of composition B1, and composition C4 was used instead of composition C1.
[保護片H14的製造] 除了使用組成物A4代替組成物A1、使用組成物B9代替組成物B1、使用組成物C5代替組成物C1以外,藉由與保護片H1相同的方法製造保護片H14。 [Manufacture of protective sheet H14] Protective sheet H14 was produced by the same method as protective sheet H1, except that composition A4 was used instead of composition A1, composition B9 was used instead of composition B1, and composition C5 was used instead of composition C1.
對單層A1~單層A7、單層B1~單層B10、單層C1~單層C6及保護片H1~保護片H14進行以下的試驗/評價。The following test/evaluation was performed about single layer A1 - single layer A7, single layer B1 - single layer B10, single layer C1 - single layer C6, and protective sheet H1 - protective sheet H14.
[玻璃轉移溫度] 對各層的玻璃轉移溫度進行測定,結果為 單層A1:42℃ 單層B1:22℃ 單層C1:27℃。 [Glass transition temperature] The glass transition temperature of each layer was measured, and the result was Single layer A1: 42°C Single layer B1: 22°C Monolayer C1: 27°C.
[流動長度] 於單層A1~單層C1及保護片H1~保護片H14各自的單面,在90℃的加熱條件下以2 m/分鐘的速度層壓聚醯亞胺膜(卡普頓(Capton)500H),衝壓成0.5 cm×1 cm的長方形。於層壓後將剝離片剝下,載置於聚醯亞胺膜(卡普頓(Capton)500H)。藉此,單層A1~單層C1及保護片H1~保護片H14分別成為被兩張聚醯亞胺膜夾入的形狀。 [flow length] Laminate a polyimide film (Capton 500H) on one side of the single layer A1 to single layer C1 and the protective sheet H1 to the protective sheet H14 at a speed of 2 m/min under heating conditions of 90°C. ), punched into a rectangle of 0.5 cm × 1 cm. After lamination, the release sheet was peeled off and placed on a polyimide film (Capton 500H). Thereby, the single layer A1 - the single layer C1 and the protective sheet H1 - the protective sheet H14 each have a shape sandwiched between two polyimide films.
於由聚醯亞胺膜夾持的單層A1~單層C1及保護片H1~保護片H14,分別放置一張耐熱脫模膜(歐普蘭(opulent)CR1012MT4 150 μm,三井化學東賽璐(Mitsui Chemicals Tohcello)製造),利用橡膠硬度70度(以JIS K 6253 A,得樂(TECLOCK)橡膠/塑膠硬度計(硬度計(durometer))GS-719N進行測定)的矽酮橡膠將該些夾持,於180℃的加熱條件下,以1 MPa按壓5分鐘。算出熔融後自聚醯亞胺膜的各邊流動的部分中最流動的部分的長度,將四邊的平均值作為流動長(μm)進行測定。對單層A1~單層C1及保護片H1~保護片H14分別製成四張樣品,測定流動長(μm)的平均值。另外,基於測定的流動長度(μm)的平均值及膜厚(μm),算出指數X、指數Z、指數Y、指數W。Place a piece of heat-resistant release film (Opulent CR1012MT4 150 μm, Mitsui Chemicals Tocel ( Made by Mitsui Chemicals Tohcello), silicone rubber with a rubber hardness of 70 degrees (measured with JIS K 6253 A, TECLOCK rubber/plastic hardness tester (durometer) GS-719N) is used to attach these clips Hold, under the heating condition of 180 ℃, press at 1 MPa for 5 minutes. The length of the most flowing part among the parts flowing from each side of the polyimide film after melting was calculated, and the average value of the four sides was measured as the flow length (μm). Four samples were prepared for each of the single layer A1 to single layer C1 and the protective sheet H1 to H14, and the average value of the flow length (μm) was measured. In addition, the index X, the index Z, the index Y, and the index W were calculated based on the average value of the measured flow length (μm) and the film thickness (μm).
[冷熱循環]
(試驗單片的製作)
準備於包含玻璃環氧的基板上呈陣列狀搭載有5個×5個經模塑密封的電子零件(1000 μm×1000 μm)的基板。基板的厚度為0.3 mm,模塑密封厚、即自基板上表面至模塑密封材的頂面的高度(零件高度)H為0.7 mm。其後,沿著作為零件彼此的間隙的槽進行半切割,獲得試驗基板。半切割槽深度設為0.8 mm(基板20的切割槽深度為0.1 mm),半切割槽寬度設為200 μm。於8 MPa、170℃的條件下,將保護片H1~保護片H14熱壓接於所述試驗基板上5分鐘,用手將緩衝材剝離。其後,將所獲得的電子零件搭載基板沿著半切割槽進行全切割,藉此對各保護片獲得25個試驗單片。
將所獲得的試驗單片投入至冷熱衝擊裝置(「TSE-11-A」,愛斯佩克(Espec)公司製造),於高溫曝露:125℃且15分鐘、低溫曝露:-50℃且15分鐘的曝露條件下實施1000次交替曝露。其後,取出試驗單片,觀察電子零件保護層的外觀,對破損的試驗單片數進行計數,按照以下的基準進行評價。對於各例,試驗個數分別設為10個。
+++:破損的試驗單片數為0個。
++:破損的試驗單片數為1個以上且2個以下。
+:破損的試驗單片數為3個以上且5個以下。(實用水準)
NG:破損的試驗單片數為6個以上。
[表1A]
[探針黏性試驗]
使用保護片H1~保護片H10進行探針黏性試驗。按照第十七修正日本藥典 一般試驗法 6.製劑試驗法 6.12黏著力試驗法 3.4探針黏性試驗法將保護片H1~保護片H10切成2 cm見方以上進行試驗。另外,試驗是於配重環貼上片,於其上放置合計200 g的重物,藉此施加載荷來進行。試驗於N=4時進行,將其平均值作為結果。以下示出結果。
[表3A]
如圖示般,示出了於第一保護層32側(第一面側)幾乎無黏性。另一方面,示出了於第二保護層34側(第二面側),根據填料(二氧化矽)的量而黏性提高。As shown in the figure, there is almost no stickiness on the first
[電子器件封裝的製造] 準備搭載有藉由凸塊而與電路基板連接的IC晶片及八邊形的電感器的安裝基板,使第一保護層側與電路基板側相向,於180℃、1 MPa的條件下對保護片H1進行5分鐘熱壓接,製造具有保護層的電子器件封裝P1。藉由相同的方法由保護片H2~保護片H14製造電子器件封裝P2~電子器件封裝P14。關於電子器件封裝P1~電子器件封裝P14中的電子器件封裝P7、電子器件封裝P11及電子器件封裝P13以外的電子器件封裝(滿足指數X=0.5~2.0),確認到任一保護層均以15 μm以上的膜厚形成於凸塊的側面、電感器的側面、IC晶片的上角部的任一者,起到充分的絕緣保護功能。但是,於P11(指數X>2.0)中,保護層的流動性過高而產生膜厚變薄的部分。另外,於P7及P13(指數X<0.5)中,保護層的流動性過低而產生保護層無法遍佈的部分。另外,關於填料量為10重量份以上的H3、H7、H10、H13及H14的保護片,冷熱循環試驗的結果較其他保護片而言更差。 [Manufacturing of electronic device packages] Prepare a mounting board on which an IC chip and an octagonal inductor connected to the circuit board by bumps are mounted, and make the side of the first protective layer face the side of the circuit board, and test the protective sheet under the conditions of 180°C and 1 MPa H1 was subjected to thermocompression bonding for 5 minutes to manufacture electronic device package P1 with a protective layer. The electronic device package P2 - the electronic device package P14 are manufactured from the protection sheet H2 - the protection sheet H14 by the same method. For electronic device packages other than electronic device package P7, electronic device package P11, and electronic device package P13 among electronic device packages P1 to electronic device package P14 (satisfying index X=0.5 to 2.0), it is confirmed that any protective layer is rated at 15 The film thickness of μm or more is formed on any one of the side surfaces of the bump, the side surface of the inductor, and the upper corner of the IC chip, and has a sufficient insulating protection function. However, in P11 (index X > 2.0), the fluidity of the protective layer was too high, and a portion where the film thickness became thinner occurred. In addition, in P7 and P13 (index X<0.5), the fluidity of the protective layer was too low, and a portion where the protective layer could not spread occurred. In addition, for the protective sheets of H3, H7, H10, H13, and H14 with filler amounts of 10 parts by weight or more, the results of the thermal cycle test were worse than those of other protective sheets.
以上,使用實施方式對本發明進行了說明,但本發明的技術範圍並不限定於所述實施方式中記載的範圍。對於本領域技術人員而言明確能夠對所述實施方式施加各種變更或改良。根據申請專利範圍的記載明確,此種施加了變更或改良的實施方式亦可包含於本發明的技術範圍內。As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range described in the said embodiment. It is clear for those skilled in the art that various changes and improvements can be added to the above-described embodiments. It is clear from the description in the claims that such changes or improvements are included in the technical scope of the present invention.
申請專利範圍、說明書、及圖式中示出的方法中的動作、程序、步驟、及階段等各處理的執行順序並未特別明示為「於…以前」、「於…之前」等,另外,應留意只要不於之後的處理中使用之前的處理的結果所產生者,則可按照任意的順序來實現。關於申請專利範圍、說明書、及圖式中的動作流程,即便為了方便而使用「首先」、「接下來」等進行了說明,亦並不意味著必須依序來實施。The execution order of each process such as actions, procedures, steps, and stages in the methods shown in the scope of claims, the specification, and the drawings is not specifically stated as "before", "before", etc. In addition, It should be noted that as long as the result generator of the previous processing is not used in the subsequent processing, it can be implemented in any order. Regarding the flow of operations in the scope of claims, specification, and drawings, even if descriptions are made using "first" and "next" for convenience, it does not mean that they must be implemented sequentially.
10:電路基板 12:安裝基板 20:電子器件(基板) 22:電子器件 24:連接構件 30:保護層 32:第一保護層 34:第二保護層 35:聚醯亞胺膜 36:第三保護層 38:保護片 40:導電層 42:剝離片 44:金屬材料層 46:含金屬片 100:電子器件封裝 L1~L4:長度(流動長度) S100、S200、S300:步驟 10: Circuit board 12: Install the substrate 20: Electronic devices (substrates) 22: Electronic devices 24: Connecting components 30: protective layer 32: The first protective layer 34: Second protective layer 35: Polyimide film 36: The third protective layer 38: Protective sheet 40: Conductive layer 42: Stripping sheet 44: metal material layer 46: With metal sheet 100: Electronic device packaging L1~L4: length (flow length) S100, S200, S300: steps
圖1表示本實施方式的電子器件封裝100的一例。
圖2表示本實施方式的保護片38的一例。
圖3表示本實施方式的流動長的一例。
圖4表示本實施方式的保護片38的另一例。
圖5表示本實施方式的電子器件封裝100的製造方法的流程的一例。
圖6表示圖5的流程中的S200的一例。
圖7表示形成有保護層30的安裝基板12的一例。
圖8表示含金屬片46的一例。
圖9表示使用含金屬片46的S300的一例。
FIG. 1 shows an example of an
10:電路基板 10: Circuit board
20:電子器件 20: Electronic devices
22:電子器件 22: Electronic devices
24:連接構件 24: Connecting components
30:保護層 30: protective layer
40:導電層 40: Conductive layer
100:電子器件封裝 100: Electronic device packaging
Claims (25)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-193194 | 2021-11-29 | ||
| JP2021193194 | 2021-11-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202322301A true TW202322301A (en) | 2023-06-01 |
| TWI903125B TWI903125B (en) | 2025-11-01 |
Family
ID=86539662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111143663A TWI903125B (en) | 2021-11-29 | 2022-11-16 | Manufacturing method of protective film and electronic device packaging |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP7609301B2 (en) |
| KR (1) | KR20240113761A (en) |
| CN (1) | CN118266274A (en) |
| TW (1) | TWI903125B (en) |
| WO (1) | WO2023095697A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025062977A1 (en) * | 2023-09-21 | 2025-03-27 | 日本発條株式会社 | Laminate manufacturing apparatus and laminate manufacturing method |
| JP7460013B1 (en) * | 2023-11-30 | 2024-04-02 | artience株式会社 | Electronic component mounting boards and electronic devices |
| JP7783968B1 (en) * | 2024-12-18 | 2025-12-10 | artience株式会社 | Adhesive sheet for fixing a polishing pad, adhesive sheet for fixing a polishing pad with release sheet, polishing pad with adhesive layer A, polishing pad with release sheet and adhesive layer A, and method for fixing a polishing pad to a surface plate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7445968B2 (en) | 2005-12-16 | 2008-11-04 | Sige Semiconductor (U.S.), Corp. | Methods for integrated circuit module packaging and integrated circuit module packages |
| JP5349432B2 (en) * | 2010-09-06 | 2013-11-20 | 日東電工株式会社 | Manufacturing method of electronic component device and resin composition sheet for sealing electronic component used therefor |
| JP5893917B2 (en) * | 2011-12-28 | 2016-03-23 | 日東電工株式会社 | Resin sheet for electronic parts, method for producing resin sheet for electronic parts, and method for producing semiconductor device |
| WO2015083491A1 (en) * | 2013-12-03 | 2015-06-11 | 東洋インキScホールディングス株式会社 | Electronic element and sheet material |
| US9683138B2 (en) * | 2015-06-26 | 2017-06-20 | Nitto Denko Corporation | Pressure-sensitive adhesive sheet and magnetic disk drive |
| CN207638990U (en) * | 2015-07-13 | 2018-07-20 | 株式会社村田制作所 | Resin substrate and resin substrate equipped with component |
| JP2020069720A (en) * | 2018-10-31 | 2020-05-07 | 京セラ株式会社 | Sheet for encapsulation and manufacturing method of electronic component using the same |
| JP7510405B2 (en) * | 2019-03-11 | 2024-07-03 | 積水化学工業株式会社 | Coating agent and method for manufacturing module using said coating agent |
-
2022
- 2022-11-16 TW TW111143663A patent/TWI903125B/en active
- 2022-11-16 CN CN202280076985.9A patent/CN118266274A/en active Pending
- 2022-11-16 KR KR1020247015303A patent/KR20240113761A/en active Pending
- 2022-11-16 WO PCT/JP2022/042570 patent/WO2023095697A1/en not_active Ceased
- 2022-11-16 JP JP2023563644A patent/JP7609301B2/en active Active
-
2024
- 2024-12-17 JP JP2024220911A patent/JP2025041717A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023095697A1 (en) | 2023-06-01 |
| TWI903125B (en) | 2025-11-01 |
| JP7609301B2 (en) | 2025-01-07 |
| JP2025041717A (en) | 2025-03-26 |
| WO2023095697A1 (en) | 2023-06-01 |
| CN118266274A (en) | 2024-06-28 |
| KR20240113761A (en) | 2024-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI903125B (en) | Manufacturing method of protective film and electronic device packaging | |
| US11139261B2 (en) | Film-like adhesive and method for producing semiconductor package using film-like adhesive | |
| KR101920083B1 (en) | Adhesive film for semiconductor device, film for back surface of flip-chip semiconductor and dicing-tape-integrated film for back surface of flip-chip semiconductor | |
| JP6171280B2 (en) | Manufacturing method of semiconductor device | |
| TWI512850B (en) | Semiconductor device manufacturing method | |
| TWI465542B (en) | Flip-chip semiconductor back film | |
| KR20130056863A (en) | Film for back surface of flip-chip semiconductor, dicing-tape-integrated film for back surface of semiconductor, process for producing semiconductor device, and flip-chip semiconductor device | |
| KR20120010124A (en) | Flip chip type semiconductor back film and dicing tape integrated semiconductor back film | |
| JP6089567B2 (en) | Thermosetting adhesive sheet for covering electronic parts, method for producing the same, and method for producing an electronic member using the same | |
| JP2009091389A (en) | Hollow device sealing resin composition sheet and hollow device sealed using the same | |
| JP2015106698A (en) | Method for manufacturing semiconductor device | |
| KR20130056861A (en) | Film for back surface of flip-chip semiconductor | |
| JP2014056924A (en) | Semiconductor device manufacturing method and thermosetting resin composition used therefor, and semiconductor device obtained by those | |
| KR20140142676A (en) | Thermosetting die-bonding film, die-bonding film with dicing sheet, and process for producing semiconductor device | |
| US10600707B2 (en) | Fiber-containing resin substrate, encapsulated semiconductor devices mounting substrate, encapsulated semiconductor devices forming wafer, encapsulated semiconductor devices mounting sheet, semiconductor equipment, and method for manufacturing semiconductor equipment | |
| JP7115469B2 (en) | Sealing film, method for manufacturing electronic component device, and electronic component device | |
| KR100596186B1 (en) | Adhesive sheet for manufacturing semiconductor device, semiconductor device using the same and method of manufaturing thereof | |
| CN108178990A (en) | Adhering film, dicing/die bonding film, the manufacturing method of semiconductor device and semiconductor device | |
| JP2016037546A (en) | Insulating resin sheet, and circuit board and semiconductor package that use the insulating resin sheet | |
| JP2014192446A (en) | Manufacturing method of electronic member | |
| JP2023021385A (en) | Manufacturing method for semiconductor device, and resin sheet | |
| KR20230165396A (en) | Sealing structure, method for manufacturing same, and sealing material | |
| JP2010258086A (en) | Adhesive sheet for semiconductor, and dicing tape integrated type adhesive sheet for semiconductor | |
| JP2008222815A (en) | Adhesive composition and adhesive sheet using the same | |
| JP5233066B2 (en) | Adhesive sheet for electronic materials |