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TWI838141B - Boost converter with high power factor - Google Patents

Boost converter with high power factor Download PDF

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TWI838141B
TWI838141B TW112106893A TW112106893A TWI838141B TW I838141 B TWI838141 B TW I838141B TW 112106893 A TW112106893 A TW 112106893A TW 112106893 A TW112106893 A TW 112106893A TW I838141 B TWI838141 B TW I838141B
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TW202435547A (en
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詹子增
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宏碁股份有限公司
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Abstract

A boost converter with a high power factor includes a bridge rectifier, a boost inductor, a power switch element, an output stage circuit, a feedback compensation circuit, a multiplier, and a detection and control circuit. The bridge rectifier generates a rectified voltage according to a first input voltage and a second input voltage. The boost inductor receives the rectified voltage. The output stage circuit is coupled to the boost inductor, and is configured to generate an output voltage. The feedback compensation circuit generates a feedback voltage according to the output voltage. The multiplier generates a product voltage difference according to the rectified voltage and the feedback voltage. The product voltage difference is applied to the boost inductor. The detection and control circuit controls the multiplier according to the rectified voltage, the product voltage difference, and a communication voltage, so as to selectively update and increase the aforementioned product voltage difference.

Description

高功率因數之升壓轉換器High Power Factor Boost Converter

本發明係關於一種升壓轉換器,特別係關於一種高功率因數之升壓轉換器。The present invention relates to a boost converter, and in particular to a high power factor boost converter.

升壓轉換器為筆記型電腦領域中不可或缺之元件。然而,若升壓轉換器之功率因數(Power Factor)不足,則很容易造成相關筆記型電腦之整體操作性能下滑。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。The boost converter is an indispensable component in the field of laptop computers. However, if the power factor of the boost converter is insufficient, it is easy to cause the overall operating performance of the related laptop to decline. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by the previous technology.

在較佳實施例中,本發明提出一種高功率因數之升壓轉換器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一升壓電感器,接收該整流電位;一功率切換器,根據一脈波寬度調變電位來選擇性地將該升壓電感器耦接至一接地電位;一輸出級電路,耦接至該升壓電感器,並產生一輸出電位;一回授補償電路,根據該輸出電位來產生一回授電位;一乘法器,根據該整流電位和該回授電位來產生一乘積電位差,其中該乘積電位差係施加於該升壓電感器,使得一電感電流將流過該升壓電感器;以及一偵測及控制電路,根據該回授電位來產生該脈波寬度調變電位;其中該偵測及控制電路更根據該整流電位、該乘積電位差,以及一溝通電位來控制該乘法器,以選擇性地更新及提升該乘積電位差。In a preferred embodiment, the present invention provides a high power factor boost converter, comprising: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a boost inductor, receiving the rectified potential; a power switch, selectively coupling the boost inductor to a ground potential according to a pulse width modulation potential; an output stage circuit, coupled to the boost inductor, and generating an output potential; a feedback compensation circuit, generating a power factor according to the output potential; A multiplier is provided for generating a feedback potential according to the rectified potential and the feedback potential, wherein the product potential difference is applied to the boost inductor so that an inductor current flows through the boost inductor; and a detection and control circuit is provided for generating the pulse width modulation potential according to the feedback potential; wherein the detection and control circuit is further provided for controlling the multiplier according to the rectified potential, the product potential difference, and a communication potential to selectively update and enhance the product potential difference.

在一些實施例中,若該乘積電位差之一最大值低於該整流電位之一平均值所對應之一臨界值,則該偵測及控制電路將會控制該乘法器,以藉由將該乘積電位差放大一增益倍率來更新該乘積電位差。In some embodiments, if a maximum value of the product potential difference is lower than a critical value corresponding to an average value of the rectified potential, the detection and control circuit will control the multiplier to update the product potential difference by amplifying the product potential difference by a gain factor.

在一些實施例中,該橋式整流器包括:一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至一第一輸入節點以接收該第一輸入電位,而該第一二極體之該陰極係耦接至一第一節點以輸出該整流電位;一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至一第二輸入節點以接收該第二輸入電位,而該第二二極體之該陰極係耦接至該第一節點;一第三二極體,具有一陽極和一陰極,其中該第三二極體之該陽極係耦接至該接地電位,而該第三二極體之該陰極係耦接至該第一輸入節點;以及一第四二極體,具有一陽極和一陰極,其中該第四二極體之該陽極係耦接至該接地電位,而該第四二極體之該陰極係耦接至該第二輸入節點;其中該升壓電感器具有一第一端和一第二端,該升壓電感器之該第一端係耦接至該第一節點,而該升壓電感器之該第二端係耦接至一第二節點。In some embodiments, the bridge rectifier includes: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to a first input node to receive the first input potential, and the cathode of the first diode is coupled to a first node to output the rectified potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to a second input node to receive the second input potential, and the cathode of the second diode is coupled to the first node; a third diode having a an anode and a cathode, wherein the anode of the third diode is coupled to the ground potential, and the cathode of the third diode is coupled to the first input node; and a fourth diode having an anode and a cathode, wherein the anode of the fourth diode is coupled to the ground potential, and the cathode of the fourth diode is coupled to the second input node; wherein the boost inductor has a first end and a second end, the first end of the boost inductor is coupled to the first node, and the second end of the boost inductor is coupled to a second node.

在一些實施例中,該功率切換器包括:一切換電晶體,具有一控制端、一第一端,以及一第二端,其中該切換電晶體之該控制端係用於接收該脈波寬度調變電位,該切換電晶體之該第一端係耦接至該接地電位,而該切換電晶體之該第二端係耦接至該第二節點。In some embodiments, the power switch includes: a switching transistor having a control end, a first end, and a second end, wherein the control end of the switching transistor is used to receive the pulse width modulation potential, the first end of the switching transistor is coupled to the ground potential, and the second end of the switching transistor is coupled to the second node.

在一些實施例中,該輸出級電路包括:一第五二極體,具有一陽極和一陰極,其中該第五二極體之該陽極係耦接至該第二節點,而該第五二極體之該陰極係耦接至一輸出節點以輸出該輸出電位;以及一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至該輸出節點,而該第一電容器之該第二端係耦接至該接地電位。In some embodiments, the output stage circuit includes: a fifth diode having an anode and a cathode, wherein the anode of the fifth diode is coupled to the second node, and the cathode of the fifth diode is coupled to an output node to output the output potential; and a first capacitor having a first end and a second end, wherein the first end of the first capacitor is coupled to the output node, and the second end of the first capacitor is coupled to the ground potential.

在一些實施例中,該回授補償電路包括:一第一電阻器,具有一第一端和一第二端,其中該第一電阻器之該第一端係耦接至該輸出節點以接收該輸出電位,而該第一電阻器之該第二端係耦接至一第三節點;一第二電阻器,具有一第一端和一第二端,其中該第二電阻器之該第一端係耦接至該第三節點,而該第二電阻器之該第二端係耦接至一共同節點;一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至一第四節點,而該第二電容器之該第二端係耦接至該第三節點;以及一穩壓器,具有一陽極、一陰極,以及一參考端,其中該穩壓器之該陽極係耦接至該共同節點,該穩壓器之該陰極係耦接至該第四節點,而該穩壓器之該參考端係耦接至該第三節點。In some embodiments, the feedback compensation circuit includes: a first resistor having a first end and a second end, wherein the first end of the first resistor is coupled to the output node to receive the output potential, and the second end of the first resistor is coupled to a third node; a second resistor having a first end and a second end, wherein the first end of the second resistor is coupled to the third node, and the second end of the second resistor is coupled to a common node. a common node; a second capacitor having a first end and a second end, wherein the first end of the second capacitor is coupled to a fourth node, and the second end of the second capacitor is coupled to the third node; and a voltage regulator having an anode, a cathode, and a reference end, wherein the anode of the voltage regulator is coupled to the common node, the cathode of the voltage regulator is coupled to the fourth node, and the reference end of the voltage regulator is coupled to the third node.

在一些實施例中,該回授補償電路更包括:一線性光耦合器,包括一發光二極體和一雙載子接面電晶體,其中該發光二極體具有一陽極和一陰極,該發光二極體之該陽極係耦接至該輸出節點,該發光二極體之該陰極係耦接至該第四節點,該雙載子接面電晶體具有一集極和一射極,該雙載子接面電晶體之該集極係用於輸出該回授電位,而該雙載子接面電晶體之該射極係耦接至一第五節點;以及一第三電容器,具有一第一端和一第二端,其中該第三電容器之該第一端係耦接至該第五節點,而該第三電容器之該第二端係耦接至該接地電位。In some embodiments, the feedback compensation circuit further includes: a linear optical coupler, including a light emitting diode and a bipolar junction transistor, wherein the light emitting diode has an anode and a cathode, the anode of the light emitting diode is coupled to the output node, the cathode of the light emitting diode is coupled to the fourth node, and the bipolar junction transistor has a collector. and an emitter, the collector of the bipolar junction transistor is used to output the feedback potential, and the emitter of the bipolar junction transistor is coupled to a fifth node; and a third capacitor having a first end and a second end, wherein the first end of the third capacitor is coupled to the fifth node, and the second end of the third capacitor is coupled to the ground potential.

在一些實施例中,該偵測及控制電路包括:一平均電路,計算出該整流電位之一平均值,以產生一平均電位。In some embodiments, the detection and control circuit includes: an averaging circuit that calculates an average value of the rectified potential to generate an average potential.

在一些實施例中,該偵測及控制電路更包括:一微控制器,接收該平均電位,並根據該回授電位來產生該脈波寬度調變電位,其中該微控制器更監控該乘積電位差,以取得該乘積電位差之一最大值。In some embodiments, the detection and control circuit further includes: a microcontroller that receives the average potential and generates the pulse width modulation potential according to the feedback potential, wherein the microcontroller further monitors the product potential difference to obtain a maximum value of the product potential difference.

在一些實施例中,該微控制器係根據該整流電位之平均值和該乘積電位差之該最大值來決定是否要更新及提升該乘法器之該乘積電位差。In some embodiments, the microcontroller determines whether to update and increase the product potential difference of the multiplier based on the average value of the rectified potential and the maximum value of the product potential difference.

為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.

在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.

第1圖係顯示根據本發明一實施例所述之升壓轉換器100之示意圖。例如,升壓轉換器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,升壓轉換器100包括:一橋式整流器110、一升壓電感器LU、一功率切換器120、一輸出級電路130、一回授補償電路140、一乘法器150,以及一偵測及控制電路160。必須注意的是,雖然未顯示於第1圖中,但升壓轉換器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram of a boost converter 100 according to an embodiment of the present invention. For example, the boost converter 100 may be applied to a desktop computer, a laptop computer, or an all-in-one computer. As shown in FIG. 1 , the boost converter 100 includes: a bridge rectifier 110, a boost inductor LU, a power switch 120, an output stage circuit 130, a feedback compensation circuit 140, a multiplier 150, and a detection and control circuit 160. It should be noted that, although not shown in FIG. 1 , the boost converter 100 may further include other components, such as: a voltage regulator or (and) a negative feedback circuit.

橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值(Root Mean Square,RMS)可約介於90V至264V之間,但亦不僅限於此。升壓電感器LU可接收整流電位VR。功率切換器120可根據一脈波寬度調變(Pulse Width Modulation,PWM)電位VM來選擇性地將升壓電感器LU耦接至一接地電位VSS(例如:0V)。例如,若脈波寬度調變電位VM為一高邏輯位準(亦即,邏輯「1」),則功率切換器120可將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一短路路徑);反之,若脈波寬度調變電位VM為一低邏輯位準(亦即,邏輯「0」),則功率切換器120不會將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一開路路徑)。輸出級電路130係耦接至升壓電感器LU,並可用於產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可介於360V至440V之間,但亦不僅限於此。回授補償電路140可根據輸出電位VOUT來產生一回授電位VF。乘法器150可根據整流電位VR和回授電位VF來產生一乘積電位差ΔV,其中此乘積電位差ΔV可施加於升壓電感器LU,使得一電感電流IL將可流過升壓電感器LU。偵測及控制電路160可根據回授電位VF來產生脈波寬度調變電位VM。另外,偵測及控制電路160還可根據整流電位VR、乘積電位差ΔV,以及一溝通電位VC來控制乘法器150,以選擇性地更新及提升前述之乘積電位差ΔV。例如,溝通電位VC可來自一系統端(未顯示),其可視為一外部控制電位。在一些實施例中,若乘積電位差ΔV之一最大值低於整流電位VR之一平均值所對應之一臨界值,則偵測及控制電路160將會控制乘法器150,以藉由將乘積電位差ΔV放大一增益倍率K來更新此乘積電位差ΔV;否則,偵測及控制電路160將不會改變乘法器150之乘積電位差ΔV。然而,本發明亦不僅限於此。根據實際量測結果,本發明所提之升壓轉換器100將可自動追蹤及最佳化其自身之功率因數(Power Factor),從而可維持良好之整體轉換效率。The bridge rectifier 110 can generate a rectified potential VR according to a first input potential VIN1 and a second input potential VIN2, wherein an AC voltage with any frequency and any amplitude can be formed between the first input potential VIN1 and the second input potential VIN2. For example, the frequency of the AC voltage can be approximately 50 Hz or 60 Hz, and the root mean square (RMS) value of the AC voltage can be approximately between 90 V and 264 V, but is not limited thereto. The boost inductor LU can receive the rectified potential VR. The power switch 120 can selectively couple the boost inductor LU to a ground potential VSS (e.g., 0 V) according to a pulse width modulation (PWM) potential VM. For example, if the pulse width modulation potential VM is a high logic level (i.e., logic "1"), the power switch 120 can couple the boost inductor LU to the ground potential VSS (i.e., the power switch 120 can be similar to a short circuit path); conversely, if the pulse width modulation potential VM is a low logic level (i.e., logic "0"), the power switch 120 will not couple the boost inductor LU to the ground potential VSS (i.e., the power switch 120 can be similar to an open circuit path). The output stage circuit 130 is coupled to the boost inductor LU and can be used to generate an output potential VOUT. For example, the output potential VOUT may be a DC potential, and its potential level may be between 360V and 440V, but is not limited thereto. The feedback compensation circuit 140 may generate a feedback potential VF according to the output potential VOUT. The multiplier 150 may generate a product potential difference ΔV according to the rectified potential VR and the feedback potential VF, wherein the product potential difference ΔV may be applied to the boost inductor LU, so that an inductor current IL may flow through the boost inductor LU. The detection and control circuit 160 may generate a pulse width modulation potential VM according to the feedback potential VF. In addition, the detection and control circuit 160 can also control the multiplier 150 according to the rectified potential VR, the product potential difference ΔV, and a communication potential VC to selectively update and enhance the aforementioned product potential difference ΔV. For example, the communication potential VC can come from a system end (not shown), which can be regarded as an external control potential. In some embodiments, if a maximum value of the product potential difference ΔV is lower than a critical value corresponding to an average value of the rectified potential VR, the detection and control circuit 160 will control the multiplier 150 to update the product potential difference ΔV by amplifying the product potential difference ΔV by a gain factor K; otherwise, the detection and control circuit 160 will not change the product potential difference ΔV of the multiplier 150. However, the present invention is not limited thereto. According to actual measurement results, the boost converter 100 of the present invention can automatically track and optimize its own power factor, thereby maintaining good overall conversion efficiency.

以下實施例將介紹升壓轉換器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the boost converter 100. It must be understood that these drawings and descriptions are only examples and are not intended to limit the scope of the present invention.

第2圖係顯示根據本發明一實施例所述之升壓轉換器200之電路圖。在第2圖之實施例中,升壓轉換器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括一橋式整流器210、一升壓電感器LU、一功率切換器220、一輸出級電路230、一回授補償電路240、一乘法器250,以及一偵測及控制電路260。升壓轉換器200之第一輸入節點NIN1和第二輸入節點NIN2可用於由一外部輸入電源(未顯示)處分別接收一第一輸入電位VIN1和一第二輸入電位VIN2。升壓轉換器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一系統端(未顯示)。FIG. 2 is a circuit diagram of a boost converter 200 according to an embodiment of the present invention. In the embodiment of FIG. 2, the boost converter 200 has a first input node NIN1, a second input node NIN2, and an output node NOUT, and includes a bridge rectifier 210, a boost inductor LU, a power switch 220, an output stage circuit 230, a feedback compensation circuit 240, a multiplier 250, and a detection and control circuit 260. The first input node NIN1 and the second input node NIN2 of the boost converter 200 can be used to receive a first input potential VIN1 and a second input potential VIN2 respectively from an external input power source (not shown). The output node NOUT of the boost converter 200 can be used to output an output potential VOUT to a system end (not shown).

橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一接地電位VSS,而第三二極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至接地電位VSS,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。The bridge rectifier 210 includes a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4. The first diode D1 has an anode and a cathode, wherein the anode of the first diode D1 is coupled to the first input node NIN1, and the cathode of the first diode D1 is coupled to a first node N1 to output a rectified potential VR. The second diode D2 has an anode and a cathode, wherein the anode of the second diode D2 is coupled to the second input node NIN2, and the cathode of the second diode D2 is coupled to the first node N1. The third diode D3 has an anode and a cathode, wherein the anode of the third diode D3 is coupled to a ground potential VSS, and the cathode of the third diode D3 is coupled to the first input node NIN1. The fourth diode D4 has an anode and a cathode, wherein the anode of the fourth diode D4 is coupled to the ground potential VSS, and the cathode of the fourth diode D4 is coupled to the second input node NIN2.

升壓電感器LU具有一第一端和一第二端,其中升壓電感器LU之第一端係耦接至第一節點N1以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第二節點N2。The boost inductor LU has a first terminal and a second terminal, wherein the first terminal of the boost inductor LU is coupled to the first node N1 to receive the rectified potential VR, and the second terminal of the boost inductor LU is coupled to a second node N2.

功率切換器220包括一切換電晶體MS。例如,切換電晶體MS可為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。切換電晶體MS具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中切換電晶體MS之控制端係用於接收一脈波寬度調變電位VM,切換電晶體MS之第一端係耦接至接地電位VSS,而切換電晶體MS之第二端係耦接至第二節點N2。The power switch 220 includes a switching transistor MS. For example, the switching transistor MS may be an N-type metal-oxide-semiconductor field-effect transistor (NMOSFET). The switching transistor MS has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the switching transistor MS is used to receive a pulse width modulation potential VM, the first terminal of the switching transistor MS is coupled to the ground potential VSS, and the second terminal of the switching transistor MS is coupled to the second node N2.

輸出級電路230包括一第五二極體D5和一第一電容器C1。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第二節點N2,而第五二極體D5之陰極係耦接至輸出節點NOUT。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至輸出節點NOUT,而第一電容器C1之第二端係耦接至接地電位VSS。The output stage circuit 230 includes a fifth diode D5 and a first capacitor C1. The fifth diode D5 has an anode and a cathode, wherein the anode of the fifth diode D5 is coupled to the second node N2, and the cathode of the fifth diode D5 is coupled to the output node NOUT. The first capacitor C1 has a first terminal and a second terminal, wherein the first terminal of the first capacitor C1 is coupled to the output node NOUT, and the second terminal of the first capacitor C1 is coupled to the ground potential VSS.

在一些實施例中,回授補償電路240包括一穩壓器(Voltage Regulator)242、一線性光耦合器(Linear Optical Coupler)244、一第二電容器C2、一第三電容器C3、一第一電阻器R1,以及一第二電阻器R2。In some embodiments, the feedback compensation circuit 240 includes a voltage regulator 242, a linear optical coupler 244, a second capacitor C2, a third capacitor C3, a first resistor R1, and a second resistor R2.

第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係耦接至輸出節點NOUT以接收輸出電位VOUT,而第一電阻器R1之第二端係耦接至一第三節點N3。第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至第三節點N3,而第二電阻器R2之第二端係耦接至一共同節點NCM。必須理解的是,共同節點NCM可視為另一接地電位,其可與前述之接地電位VSS相同或相異。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至一第四節點N4,而第二電容器C2之第二端係耦接至第三節點N3。The first resistor R1 has a first end and a second end, wherein the first end of the first resistor R1 is coupled to the output node NOUT to receive the output potential VOUT, and the second end of the first resistor R1 is coupled to a third node N3. The second resistor R2 has a first end and a second end, wherein the first end of the second resistor R2 is coupled to the third node N3, and the second end of the second resistor R2 is coupled to a common node NCM. It must be understood that the common node NCM can be regarded as another ground potential, which can be the same as or different from the aforementioned ground potential VSS. The second capacitor C2 has a first end and a second end, wherein the first end of the second capacitor C2 is coupled to a fourth node N4, and the second end of the second capacitor C2 is coupled to the third node N3.

在一些實施例中,穩壓器242係由一TL431電子元件來實施。穩壓器242具有一陽極、一陰極,以及一參考端,其中穩壓器242之陽極係耦接至共同節點NCM,穩壓器242之陰極係耦接至第四節點N4,而穩壓器242之參考端係耦接至第三節點N3。In some embodiments, the voltage regulator 242 is implemented by a TL431 electronic component. The voltage regulator 242 has an anode, a cathode, and a reference terminal, wherein the anode of the voltage regulator 242 is coupled to the common node NCM, the cathode of the voltage regulator 242 is coupled to the fourth node N4, and the reference terminal of the voltage regulator 242 is coupled to the third node N3.

在一些實施例中,線性光耦合器244係由一PC817電子元件來實施。線性光耦合器244包括一發光二極體DL和一雙載子接面電晶體Q1(例如:NPN型)。發光二極體DL具有一陽極和一陰極,其中發光二極體DL之陽極係耦接至輸出節點NOUT以接收輸出電位VOUT,而發光二極體DL之陰極係耦接至第四節點N4。雙載子接面電晶體Q1具有一集極和一射極,其中雙載子接面電晶體Q1之集極係用於輸出一回授電位VF,而雙載子接面電晶體Q1之射極係耦接至一第五節點N5。In some embodiments, the linear optical coupler 244 is implemented by a PC817 electronic component. The linear optical coupler 244 includes a light emitting diode DL and a bipolar junction transistor Q1 (e.g., NPN type). The light emitting diode DL has an anode and a cathode, wherein the anode of the light emitting diode DL is coupled to the output node NOUT to receive the output potential VOUT, and the cathode of the light emitting diode DL is coupled to the fourth node N4. The bipolar junction transistor Q1 has a collector and an emitter, wherein the collector of the bipolar junction transistor Q1 is used to output a feedback potential VF, and the emitter of the bipolar junction transistor Q1 is coupled to a fifth node N5.

另外,第三電容器C3具有一第一端和一第二端,其中第三電容器C3之第一端係耦接至第五節點N5,而第三電容器C3之第二端係耦接至接地電位VSS。In addition, the third capacitor C3 has a first terminal and a second terminal, wherein the first terminal of the third capacitor C3 is coupled to the fifth node N5, and the second terminal of the third capacitor C3 is coupled to the ground potential VSS.

乘法器250可根據整流電位VR和回授電位VF來產生一乘積電位差ΔV,其中此乘積電位差ΔV可施加於升壓電感器LU,使得一電感電流IL將可流過升壓電感器LU。亦即,第一節點N1和第二節點N2兩者之間之一電位差即等同於前述之乘積電位差ΔV。在一些實施例中,乘法器250之乘積電位差ΔV可根據下列方程式(1)而決定:The multiplier 250 can generate a product potential difference ΔV according to the rectified potential VR and the feedback potential VF, wherein the product potential difference ΔV can be applied to the boost inductor LU, so that an inductor current IL can flow through the boost inductor LU. That is, a potential difference between the first node N1 and the second node N2 is equal to the aforementioned product potential difference ΔV. In some embodiments, the product potential difference ΔV of the multiplier 250 can be determined according to the following equation (1):

………………………………………(1) 其中「ΔV」代表乘積電位差ΔV之大小,「VR」代表整流電位VR之位準,而「VF」代表回授電位VF之位準。 ……………………………………(1) “ΔV” represents the size of the product potential difference ΔV, “VR” represents the level of the rectified potential VR, and “VF” represents the level of the feedback potential VF.

偵測及控制電路260包括一平均電路(Average Circuit)262和一微控制器(Microcontroller Unit,MCU)264。微控制器264係耦接至平均電路262,其中微控制器264可根據回授電位VF來產生脈波寬度調變電位VM。The detection and control circuit 260 includes an average circuit 262 and a microcontroller unit (MCU) 264. The microcontroller 264 is coupled to the average circuit 262, wherein the microcontroller 264 can generate a pulse width modulation potential VM according to the feedback potential VF.

平均電路262可計算出整流電位VR於一段既定時間內之一平均值,以產生一平均電位VA。微控制器264可接收平均電位VA,以取得整流電位VR之平均值。另外,微控制器264更可持續地監控乘積電位差ΔV,以取得乘積電位差ΔV於另一段既定時間內之一最大值。大致而言,微控制器264可根據整流電位VR之平均值和乘積電位差ΔV之最大值來控制乘法器250,以決定是否要更新及提升乘法器250之乘積電位差ΔV。必須理解的是,若乘法器250之乘積電位差ΔV已由微控制器264所更新及提升,其將不會滿足前述之方程式(1)。The averaging circuit 262 can calculate an average value of the rectified potential VR within a given period of time to generate an average potential VA. The microcontroller 264 can receive the average potential VA to obtain the average value of the rectified potential VR. In addition, the microcontroller 264 can continuously monitor the product potential difference ΔV to obtain a maximum value of the product potential difference ΔV within another given period of time. Generally speaking, the microcontroller 264 can control the multiplier 250 based on the average value of the rectified potential VR and the maximum value of the product potential difference ΔV to determine whether to update and increase the product potential difference ΔV of the multiplier 250. It must be understood that if the product potential difference ΔV of the multiplier 250 has been updated and increased by the microcontroller 264, it will not satisfy the aforementioned equation (1).

第3圖係顯示根據本發明一實施例所述之系統端300之示意圖。系統端300可間接地由升壓轉換器200來進行供電。在第3圖之實施例中,系統端300包括一主電路板(Mother Board,MB)310和一嵌入式控制器(Embedded Controller,EC)320,其中嵌入式控制器320可設置於主電路板310之上。系統端300之嵌入式控制器320可與升壓轉換器200之微控制器264進行溝通,其中一溝通電位VC可於微控制器264和嵌入式控制器320之間互相傳遞。藉由分析溝通電位VC,嵌入式控制器320將可取得整流電位VR之平均值和乘積電位差ΔV之最大值。在一些實施例中,嵌入式控制器320可儲存有一對照表330,其可如下列所述:FIG. 3 is a schematic diagram showing a system end 300 according to an embodiment of the present invention. The system end 300 may be indirectly powered by the boost converter 200. In the embodiment of FIG. 3 , the system end 300 includes a mother board (MB) 310 and an embedded controller (EC) 320, wherein the embedded controller 320 may be disposed on the mother board 310. The embedded controller 320 of the system end 300 may communicate with the microcontroller 264 of the boost converter 200, wherein a communication potential VC may be transmitted between the microcontroller 264 and the embedded controller 320. By analyzing the communication potential VC, the embedded controller 320 may obtain the average value of the rectified potential VR and the maximum value of the product potential difference ΔV. In some embodiments, the embedded controller 320 may store a lookup table 330, which may be as follows:

所需功率因數 整流電位VR之平均值 對應之臨界值 0.95 90V 50V 0.95 110V 61V 0.95 130V 72V 0.95 150V 83V 0.95 170V 94V 0.95 190V 105V 0.95 210V 116V 0.95 230V 127V 0.95 250V 138V 表一:嵌入式控制器之對照表 Required power factor Average value of rectified potential VR The corresponding critical value 0.95 90V 50V 0.95 110V 61V 0.95 130V 72V 0.95 150V 83V 0.95 170V 94V 0.95 190V 105V 0.95 210V 116V 0.95 230V 127V 0.95 250V 138V Table 1: Comparison table of embedded controllers

嵌入式控制器320可根據溝通電位VC之資訊來查詢其對照表330。必須理解的是,此對照表330之內容僅為舉例,其亦可根據不同需求進行調整。若乘積電位差ΔV之最大值低於整流電位VR之平均值所對應之臨界值,則代表所需之功率因數無法維持,此時嵌入式控制器320將可指示微控制器264來控制乘法器250並更新其乘積電位差ΔV。例如,微控制器264可藉由將原始之乘積電位差ΔV放大一增益倍率K來更新乘法器250之乘積電位差ΔV。例如,增益倍率K可為大於1之任一正數。在一些實施例中,乘積電位差ΔV可根據下列方程式(2)來進行更新:The embedded controller 320 can query its comparison table 330 based on the information of the communication potential VC. It must be understood that the content of this comparison table 330 is only an example, and it can also be adjusted according to different needs. If the maximum value of the product potential difference ΔV is lower than the critical value corresponding to the average value of the rectified potential VR, it means that the required power factor cannot be maintained. At this time, the embedded controller 320 will instruct the microcontroller 264 to control the multiplier 250 and update its product potential difference ΔV. For example, the microcontroller 264 can update the product potential difference ΔV of the multiplier 250 by amplifying the original product potential difference ΔV by a gain factor K. For example, the gain factor K can be any positive number greater than 1. In some embodiments, the product potential difference ΔV can be updated according to the following equation (2):

………………………………………(2) 其中「ΔV」代表更新前之原始乘積電位差ΔV之大小,「ΔV’」代表更新後之乘積電位差ΔV之大小,而「K」代表微控制器264之增益倍率K。 ………………………………………(2) Wherein “ΔV” represents the size of the original product potential difference ΔV before updating, “ΔV′” represents the size of the product potential difference ΔV after updating, and “K” represents the gain multiplier K of the microcontroller 264.

反之,若乘積電位差ΔV之最大值高於或等於整流電位VR之平均值所對應之臨界值,則代表所需之功率因數已能維持,此時微控制器264可不必改變乘法器250之乘積電位差ΔV。然而,本發明並不僅限於此。在另一些實施例中,微控制器264內亦能儲存前述之對照表330,其可於不與系統端300溝通之前提下,自行判斷是否要更新乘法器250之乘積電位差ΔV。On the contrary, if the maximum value of the product potential difference ΔV is higher than or equal to the critical value corresponding to the average value of the rectified potential VR, it means that the required power factor can be maintained, and the microcontroller 264 does not need to change the product potential difference ΔV of the multiplier 250. However, the present invention is not limited to this. In other embodiments, the microcontroller 264 can also store the aforementioned comparison table 330, which can determine whether to update the product potential difference ΔV of the multiplier 250 without communicating with the system end 300.

第4圖係顯示根據本發明一實施例所述之升壓轉換器200之電位波形圖,其中橫軸代表時間,而縱軸代表電位位準。如第4圖所示,一第一曲線CC1可代表整流電位VR之電位波形,一第二曲線CC2可代表更新前之乘積電位差ΔV之電位波形,一第三曲線CC3則可代表更新後之乘積電位差ΔV之電位波形。承前所述,若嵌入式控制器320或微控制器264判斷乘積電位差ΔV之最大值低於整流電位VR之平均值所對應之臨界值,則代表所需之功率因數無法維持。此時,微控制器264可藉由將原始之乘積電位差ΔV放大增益倍率K來更新乘法器250之乘積電位差ΔV。換言之,乘積電位差ΔV之電位波形將由第二曲線CC2轉變為第三曲線CC3,使得升壓轉換器200可維持相對較高之功率因數。因此,即使升壓轉換器200遭受到非理想因素所影響(例如:製程誤差過大或操作溫度過高),其仍可進行自動調整,從而能改善其功率因數及提升整體之轉換效率。FIG. 4 is a potential waveform diagram of the boost converter 200 according to an embodiment of the present invention, wherein the horizontal axis represents time and the vertical axis represents potential level. As shown in FIG. 4, a first curve CC1 can represent the potential waveform of the rectified potential VR, a second curve CC2 can represent the potential waveform of the product potential difference ΔV before updating, and a third curve CC3 can represent the potential waveform of the product potential difference ΔV after updating. As mentioned above, if the embedded controller 320 or the microcontroller 264 determines that the maximum value of the product potential difference ΔV is lower than the critical value corresponding to the average value of the rectified potential VR, it means that the required power factor cannot be maintained. At this time, the microcontroller 264 can update the product potential difference ΔV of the multiplier 250 by amplifying the original product potential difference ΔV by the gain factor K. In other words, the potential waveform of the product potential difference ΔV will be transformed from the second curve CC2 to the third curve CC3, so that the boost converter 200 can maintain a relatively high power factor. Therefore, even if the boost converter 200 is affected by non-ideal factors (for example, too large process error or too high operating temperature), it can still be automatically adjusted to improve its power factor and enhance the overall conversion efficiency.

本發明提出一種新穎之升壓轉換器。根據實際量測結果,使用前述設計之升壓轉換器將可維持相對較高之功率因數,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel boost converter. According to actual measurement results, the boost converter using the above design can maintain a relatively high power factor, so it is very suitable for application in various devices.

值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之升壓轉換器並不僅限於第1-4圖所圖示之狀態。本發明可以僅包括第1-4圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之升壓轉換器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters described above are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The boost converter of the present invention is not limited to the states shown in Figures 1-4. The present invention may include only one or more features of any one or more embodiments of Figures 1-4. In other words, not all of the features shown in the diagrams need to be implemented in the boost converter of the present invention at the same time. Although the embodiments of the present invention use metal oxide semi-conductor field effect transistors as an example, the present invention is not limited to this. People skilled in the art can use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.

在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.

本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.

100,200:升壓轉換器 110,210:橋式整流器 120,220:功率切換器 130,230:輸出級電路 140,240:回授補償電路 150,250:乘法器 160,260:偵測及控制電路 242:穩壓器 244:線性光耦合器 262:平均電路 264:微控制器 300:系統端 310:主電路板 320:嵌入式控制器 330:對照表 C1:第一電容器 C2:第二電容器 C3:第三電容器 CC1:第一曲線 CC2:第二曲線 CC3:第三曲線 D1:第一二極體 D2:第二二極體 D3:第三二極體 D4:第四二極體 D5:第五二極體 DL:發光二極體 IL:電感電流 K:增益倍率 LU:升壓電感器 MS:切換電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 NCM:共同節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NOUT:輸出節點 Q1:雙載子接面電晶體 R1:第一電阻器 R2:第二電阻器 VA:平均電位 VC:溝通電位 VF:回授電位 VIN1:第一輸入電位 VIN2:第二輸入電位 VM:脈波寬度調變電位 VOUT:輸出電位 VR:整流電位 VSS:接地電位 ΔV:乘積電位差100,200: Boost converter 110,210: Bridge rectifier 120,220: Power switch 130,230: Output stage circuit 140,240: Feedback compensation circuit 150,250: Multiplier 160,260: Detection and control circuit 242: Voltage regulator 244: Linear optocoupler 262: Averaging circuit 264: Microcontroller 300: System side 310: Main circuit board 320: Embedded controller 330: Comparison table C1: First capacitor C2: Second capacitor C3: Third capacitor CC1: First curve CC2: Second curve CC3: Third curve D1: First diode D2: second diode D3: third diode D4: fourth diode D5: fifth diode DL: light-emitting diode IL: inductor current K: gain ratio LU: boost inductor MS: switching transistor N1: first node N2: second node N3: third node N4: fourth node N5: fifth node NCM: common node NIN1: first input node NIN2: second input node NOUT: output node Q1: bipolar junction transistor R1: first resistor R2: second resistor VA: average potential VC: communication potential VF: feedback potential VIN1: first input potential VIN2: second input potential VM: pulse width modulation potential VOUT: output potential VR: rectified potential VSS: ground potential ΔV: product potential difference

第1圖係顯示根據本發明一實施例所述之升壓轉換器之示意圖。 第2圖係顯示根據本發明一實施例所述之升壓轉換器之電路圖。 第3圖係顯示根據本發明一實施例所述之系統端之示意圖。 第4圖係顯示根據本發明一實施例所述之升壓轉換器之電位波形圖。 FIG. 1 is a schematic diagram showing a boost converter according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a boost converter according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing a system end according to an embodiment of the present invention. FIG. 4 is a potential waveform diagram showing a boost converter according to an embodiment of the present invention.

100:升壓轉換器 100:Boost converter

110:橋式整流器 110: Bridge rectifier

120:功率切換器 120: Power switch

130:輸出級電路 130: Output stage circuit

140:回授補償電路 140: Feedback compensation circuit

150:乘法器 150:Multiplier

160:偵測及控制電路 160: Detection and control circuit

IL:電感電流 IL: Inductor current

K:增益倍率 K: gain multiplier

LU:升壓電感器 LU: Boost Inductor

VC:溝通電位 VC: Communication potential

VF:回授電位 VF: Feedback potential

VIN1:第一輸入電位 VIN1: first input potential

VIN2:第二輸入電位 VIN2: Second input potential

VM:脈波寬度調變電位 VM: Pulse Width Modulation Potential

VOUT:輸出電位 VOUT: output voltage

VR:整流電位 VR: Rectification potential

VSS:接地電位 VSS: ground potential

△V:乘積電位差 △V: product potential difference

Claims (10)

一種高功率因數之升壓轉換器,包括: 一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位; 一升壓電感器,接收該整流電位; 一功率切換器,根據一脈波寬度調變電位來選擇性地將該升壓電感器耦接至一接地電位; 一輸出級電路,耦接至該升壓電感器,並產生一輸出電位; 一回授補償電路,根據該輸出電位來產生一回授電位; 一乘法器,根據該整流電位和該回授電位來產生一乘積電位差,其中該乘積電位差係施加於該升壓電感器,使得一電感電流將流過該升壓電感器;以及 一偵測及控制電路,根據該回授電位來產生該脈波寬度調變電位; 其中該偵測及控制電路更根據該整流電位、該乘積電位差,以及一溝通電位來控制該乘法器,以選擇性地更新及提升該乘積電位差。 A high power factor boost converter includes: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a boost inductor, receiving the rectified potential; a power switch, selectively coupling the boost inductor to a ground potential according to a pulse width modulation potential; an output stage circuit, coupled to the boost inductor, and generating an output potential; a feedback compensation circuit, generating a feedback potential according to the output potential; a multiplier, generating a product potential difference according to the rectified potential and the feedback potential, wherein the product potential difference is applied to the boost inductor, so that an inductor current will flow through the boost inductor; and A detection and control circuit generates the pulse width modulation potential according to the feedback potential; wherein the detection and control circuit further controls the multiplier according to the rectified potential, the product potential difference, and a communication potential to selectively update and enhance the product potential difference. 如請求項1之升壓轉換器,其中若該乘積電位差之一最大值低於該整流電位之一平均值所對應之一臨界值,則該偵測及控制電路將會控制該乘法器,以藉由將該乘積電位差放大一增益倍率來更新該乘積電位差。In the boost converter of claim 1, if a maximum value of the product potential difference is lower than a critical value corresponding to an average value of the rectified potential, the detection and control circuit will control the multiplier to update the product potential difference by amplifying the product potential difference by a gain factor. 如請求項1之升壓轉換器,其中該橋式整流器包括: 一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至一第一輸入節點以接收該第一輸入電位,而該第一二極體之該陰極係耦接至一第一節點以輸出該整流電位; 一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至一第二輸入節點以接收該第二輸入電位,而該第二二極體之該陰極係耦接至該第一節點; 一第三二極體,具有一陽極和一陰極,其中該第三二極體之該陽極係耦接至該接地電位,而該第三二極體之該陰極係耦接至該第一輸入節點;以及 一第四二極體,具有一陽極和一陰極,其中該第四二極體之該陽極係耦接至該接地電位,而該第四二極體之該陰極係耦接至該第二輸入節點; 其中該升壓電感器具有一第一端和一第二端,該升壓電感器之該第一端係耦接至該第一節點,而該升壓電感器之該第二端係耦接至一第二節點。 A boost converter as claimed in claim 1, wherein the bridge rectifier comprises: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to a first input node to receive the first input potential, and the cathode of the first diode is coupled to a first node to output the rectified potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to a second input node to receive the second input potential, and the cathode of the second diode is coupled to the first node; A third diode having an anode and a cathode, wherein the anode of the third diode is coupled to the ground potential, and the cathode of the third diode is coupled to the first input node; and A fourth diode having an anode and a cathode, wherein the anode of the fourth diode is coupled to the ground potential, and the cathode of the fourth diode is coupled to the second input node; wherein the boost inductor has a first end and a second end, the first end of the boost inductor is coupled to the first node, and the second end of the boost inductor is coupled to a second node. 如請求項3之升壓轉換器,其中該功率切換器包括: 一切換電晶體,具有一控制端、一第一端,以及一第二端,其中該切換電晶體之該控制端係用於接收該脈波寬度調變電位,該切換電晶體之該第一端係耦接至該接地電位,而該切換電晶體之該第二端係耦接至該第二節點。 A boost converter as claimed in claim 3, wherein the power switch comprises: A switching transistor having a control end, a first end, and a second end, wherein the control end of the switching transistor is used to receive the pulse width modulation potential, the first end of the switching transistor is coupled to the ground potential, and the second end of the switching transistor is coupled to the second node. 如請求項3之升壓轉換器,其中該輸出級電路包括: 一第五二極體,具有一陽極和一陰極,其中該第五二極體之該陽極係耦接至該第二節點,而該第五二極體之該陰極係耦接至一輸出節點以輸出該輸出電位;以及 一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至該輸出節點,而該第一電容器之該第二端係耦接至該接地電位。 A boost converter as claimed in claim 3, wherein the output stage circuit comprises: a fifth diode having an anode and a cathode, wherein the anode of the fifth diode is coupled to the second node, and the cathode of the fifth diode is coupled to an output node to output the output potential; and a first capacitor having a first end and a second end, wherein the first end of the first capacitor is coupled to the output node, and the second end of the first capacitor is coupled to the ground potential. 如請求項5之升壓轉換器,其中該回授補償電路包括: 一第一電阻器,具有一第一端和一第二端,其中該第一電阻器之該第一端係耦接至該輸出節點以接收該輸出電位,而該第一電阻器之該第二端係耦接至一第三節點; 一第二電阻器,具有一第一端和一第二端,其中該第二電阻器之該第一端係耦接至該第三節點,而該第二電阻器之該第二端係耦接至一共同節點; 一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至一第四節點,而該第二電容器之該第二端係耦接至該第三節點;以及 一穩壓器,具有一陽極、一陰極,以及一參考端,其中該穩壓器之該陽極係耦接至該共同節點,該穩壓器之該陰極係耦接至該第四節點,而該穩壓器之該參考端係耦接至該第三節點。 A boost converter as claimed in claim 5, wherein the feedback compensation circuit comprises: a first resistor having a first end and a second end, wherein the first end of the first resistor is coupled to the output node to receive the output potential, and the second end of the first resistor is coupled to a third node; a second resistor having a first end and a second end, wherein the first end of the second resistor is coupled to the third node, and the second end of the second resistor is coupled to a common node; a second capacitor having a first end and a second end, wherein the first end of the second capacitor is coupled to a fourth node, and the second end of the second capacitor is coupled to the third node; and A voltage regulator has an anode, a cathode, and a reference terminal, wherein the anode of the voltage regulator is coupled to the common node, the cathode of the voltage regulator is coupled to the fourth node, and the reference terminal of the voltage regulator is coupled to the third node. 如請求項6之升壓轉換器,其中該回授補償電路更包括: 一線性光耦合器,包括一發光二極體和一雙載子接面電晶體,其中該發光二極體具有一陽極和一陰極,該發光二極體之該陽極係耦接至該輸出節點,該發光二極體之該陰極係耦接至該第四節點,該雙載子接面電晶體具有一集極和一射極,該雙載子接面電晶體之該集極係用於輸出該回授電位,而該雙載子接面電晶體之該射極係耦接至一第五節點;以及 一第三電容器,具有一第一端和一第二端,其中該第三電容器之該第一端係耦接至該第五節點,而該第三電容器之該第二端係耦接至該接地電位。 The boost converter of claim 6, wherein the feedback compensation circuit further comprises: A linear optical coupler, comprising a light-emitting diode and a bipolar junction transistor, wherein the light-emitting diode has an anode and a cathode, the anode of the light-emitting diode is coupled to the output node, the cathode of the light-emitting diode is coupled to the fourth node, the bipolar junction transistor has a collector and an emitter, the collector of the bipolar junction transistor is used to output the feedback potential, and the emitter of the bipolar junction transistor is coupled to a fifth node; and A third capacitor having a first end and a second end, wherein the first end of the third capacitor is coupled to the fifth node, and the second end of the third capacitor is coupled to the ground potential. 如請求項1之升壓轉換器,其中該偵測及控制電路包括: 一平均電路,計算出該整流電位之一平均值,以產生一平均電位。 A boost converter as claimed in claim 1, wherein the detection and control circuit comprises: An averaging circuit that calculates an average value of the rectified potential to generate an average potential. 如請求項8之升壓轉換器,其中該偵測及控制電路更包括: 一微控制器,接收該平均電位,並根據該回授電位來產生該脈波寬度調變電位,其中該微控制器更監控該乘積電位差,以取得該乘積電位差之一最大值。 The boost converter of claim 8, wherein the detection and control circuit further comprises: A microcontroller, receiving the average potential and generating the pulse width modulation potential according to the feedback potential, wherein the microcontroller further monitors the product potential difference to obtain a maximum value of the product potential difference. 如請求項9之升壓轉換器,其中該微控制器係根據該整流電位之平均值和該乘積電位差之該最大值來決定是否要更新及提升該乘法器之該乘積電位差。A boost converter as claimed in claim 9, wherein the microcontroller determines whether to update and boost the product potential difference of the multiplier based on the average value of the rectified potential and the maximum value of the product potential difference.
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TW201240301A (en) * 2011-03-28 2012-10-01 Silitek Electronic Guangzhou Power factor correction boost converter and frequency switching modulation method thereof
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