TWI833743B - 雷射加工裝置、雷射加工系統及雷射加工方法 - Google Patents
雷射加工裝置、雷射加工系統及雷射加工方法 Download PDFInfo
- Publication number
- TWI833743B TWI833743B TW108111797A TW108111797A TWI833743B TW I833743 B TWI833743 B TW I833743B TW 108111797 A TW108111797 A TW 108111797A TW 108111797 A TW108111797 A TW 108111797A TW I833743 B TWI833743 B TW I833743B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing
- laser
- laser light
- light
- Prior art date
Links
- 238000003754 machining Methods 0.000 title abstract description 13
- 238000000034 method Methods 0.000 title description 20
- 239000000758 substrate Substances 0.000 claims abstract description 372
- 238000005259 measurement Methods 0.000 claims abstract description 152
- 230000008859 change Effects 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims description 379
- 230000010355 oscillation Effects 0.000 claims description 52
- 238000007689 inspection Methods 0.000 claims description 27
- 238000002310 reflectometry Methods 0.000 claims description 22
- 238000003672 processing method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 239000012141 concentrate Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 abstract description 17
- 230000037361 pathway Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 65
- 230000007246 mechanism Effects 0.000 description 23
- 238000003384 imaging method Methods 0.000 description 22
- 238000001816 cooling Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000032258 transport Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002366 time-of-flight method Methods 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-074995 | 2018-04-09 | ||
| JP2018074995 | 2018-04-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202012912A TW202012912A (zh) | 2020-04-01 |
| TWI833743B true TWI833743B (zh) | 2024-03-01 |
Family
ID=68163583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108111797A TWI833743B (zh) | 2018-04-09 | 2019-04-03 | 雷射加工裝置、雷射加工系統及雷射加工方法 |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TWI833743B (fr) |
| WO (1) | WO2019198513A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7105639B2 (ja) * | 2018-07-05 | 2022-07-25 | 浜松ホトニクス株式会社 | レーザ加工装置 |
| JP7368246B2 (ja) * | 2020-01-22 | 2023-10-24 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
| US12529556B2 (en) | 2020-09-10 | 2026-01-20 | Tokyo Electron Limited | Thickness measuring device and thickness measuring method to measure thickness of substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200530577A (en) * | 2004-01-28 | 2005-09-16 | Univ Kyoto | Laser analysis apparatus and method |
| TW200730286A (en) * | 2005-10-11 | 2007-08-16 | Gsi Group Corp | Optical metrological scale and laser-based manufacturing method therefor |
| TW201109655A (en) * | 2009-05-28 | 2011-03-16 | L3 Technology Ltd | Assay device and methods |
| JP2016139726A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社東京精密 | レーザーダイシング装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4640174B2 (ja) * | 2003-05-22 | 2011-03-02 | 株式会社東京精密 | レーザーダイシング装置 |
| JP4251146B2 (ja) * | 2005-03-29 | 2009-04-08 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2008119715A (ja) * | 2006-11-10 | 2008-05-29 | Marubun Corp | レーザ加工装置 |
| JP2008119716A (ja) * | 2006-11-10 | 2008-05-29 | Marubun Corp | レーザ加工装置およびレーザ加工装置における焦点維持方法 |
| JP5213112B2 (ja) * | 2008-06-17 | 2013-06-19 | 株式会社ディスコ | レーザ加工方法及びレーザ加工装置 |
| JP5894384B2 (ja) * | 2011-07-08 | 2016-03-30 | 株式会社ディスコ | 加工装置 |
-
2019
- 2019-03-27 WO PCT/JP2019/013293 patent/WO2019198513A1/fr not_active Ceased
- 2019-04-03 TW TW108111797A patent/TWI833743B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200530577A (en) * | 2004-01-28 | 2005-09-16 | Univ Kyoto | Laser analysis apparatus and method |
| TW200730286A (en) * | 2005-10-11 | 2007-08-16 | Gsi Group Corp | Optical metrological scale and laser-based manufacturing method therefor |
| TW201109655A (en) * | 2009-05-28 | 2011-03-16 | L3 Technology Ltd | Assay device and methods |
| JP2016139726A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社東京精密 | レーザーダイシング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019198513A1 (fr) | 2019-10-17 |
| TW202012912A (zh) | 2020-04-01 |
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