TWI818029B - Polishing pad, manufacturing method of polishing pad and polishing method - Google Patents

Abstract

A manufacturing method of a polishing pad is provided. A base layer is provided, wherein the surface of the base layer has a top portion and a recessed portion. A surface treatment is performed on the base layer to form a functional group having strong electronegativity at the top portion and the recessed portion. A first adhesive layer is used to adhere a polishing layer onto the top portion of the base layer, and form a hydrogen bonding at the interface between the first adhesive layer and the top portion, so as to form a semi-finished polishing pad. An anchoring process is performed on the semi-finished polishing pad to form an anchoring binding between the first adhesive layer and the recessed portion of the base layer and form a hydrogen bonding at the interface between the first adhesive layer and the recessed portion.

Description

Polishing pad, polishing pad manufacturing method, and polishing method

The present invention relates to a polishing pad, a polishing pad manufacturing method and a polishing method, and in particular, to a polishing pad having a base layer, a polishing pad manufacturing method and a polishing method.

In the industrial component manufacturing process, the grinding process is a technology commonly used today to flatten the surface of the object being ground. During the polishing process, a polishing fluid can optionally be provided between the surface of the object and the polishing pad, and planarization can be performed by mechanical friction generated by the relative movement of the object and the polishing pad. The interfaces between the layers of the polishing pad are usually tightly adhered using an adhesive layer. However, during the polishing process, the abrasive fluid, waste fluid, or heat generated by friction may cause the adhesive layer to deteriorate, deform, or reduce its viscosity, resulting in Separation problems will occur between the layers of the polishing pad, which affects the stability of the polishing pad.

Therefore, there is still a need to provide means to improve the stability of polishing pads for the industry to choose from.

The present invention provides a polishing pad, a polishing pad manufacturing method and a polishing method, so that the polishing pad can have improved stability.

The manufacturing method of the polishing pad of the present invention includes the following steps. Provide a base layer with a top and a recessed portion on the surface. The base layer is surface treated to form a highly electronegative functional base on the top and in the depressions. The first adhesive layer is used to attach the polishing layer to the top of the base layer, and hydrogen bonds are formed at the interface between the first adhesive layer and the top to form a polishing pad semi-finished product. An anchoring treatment step is performed on the semi-finished polishing pad to form an anchoring bond between the first adhesive layer and the recessed portion of the base layer, and to form a hydrogen bond at the interface between the first adhesive layer and the recessed portion.

The polishing pad of the present invention includes a polishing layer, a base layer and a first adhesive layer. The first adhesive layer is disposed between the polishing layer and the base layer. The surface of the base layer has a top and a recessed portion, an interface between the first adhesive layer and the top has hydrogen bonds, and an interface between the first adhesive layer and the recessed portion has hydrogen bonds.

The grinding method of the present invention includes the following steps. A polishing pad is provided, wherein the polishing pad is a polishing pad as described above. Apply pressure to the object to rest on the polishing pad. Provides relative movement between the object and the polishing pad to perform the polishing process.

Another polishing pad of the present invention is a structure formed after a damage mode test, and includes a base layer, a polishing layer and a first adhesion pattern. The base layer has a first surface and a second surface opposite to each other. The polishing layer is located above the first surface of the base layer and has a third surface and a fourth surface opposite each other, wherein the third surface is close to First surface. The first adhesive pattern is disposed on the first surface of the base layer, wherein the area of the first adhesive pattern accounts for between 10% and 90% of the area of the first surface.

Based on the above, the manufacturing method of the polishing pad of the present invention includes the following steps: surface treatment of the base layer to form the top and recessed portions of the base layer with strong electronegativity functionality; using the first adhesive layer to make the polishing layer adhere to the base The top of the layer, and form a hydrogen bond at the interface between the first adhesive layer and the top to form a polishing pad semi-finished product; and perform an anchoring treatment step on the polishing pad semi-finished product, so that the first adhesive layer and the recessed portion of the base layer can form a hydrogen bond. An anchor adhesion is formed, and a hydrogen bond is formed at the interface between the first adhesive layer and the recessed portion, thereby improving the adhesion force between the first adhesive layer and the base layer. In this way, the polishing pad of the present invention can have improved stability.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

10: Semi-finished polishing pad

20, 30: Polishing pad

100: Basal layer

102: First adhesive layer

104:Second adhesive layer

106:Grinding layer

AP: Anchor handling steps

R1, R2: depression

S1, S2, S3, S4: Surface

S10, S12, S14: steps

ST: Surface treatment

T1, T2: top

1A to 1D are schematic cross-sectional views of a method for manufacturing a polishing pad according to an embodiment of the present invention.

Figure 2 is a schematic cross-sectional view of a polishing pad according to another embodiment of the present invention.

Figure 3 is a flow chart of a grinding method according to an embodiment of the present invention.

In this article, a range expressed by "one value to another value" is a A schematic representation that avoids enumerating all values within the range in the specification. Therefore, the description of a specific numerical range covers any numerical value within the numerical range and the smaller numerical range defined by any numerical value within the numerical range, as if the arbitrary numerical value and the smaller numerical value were expressly written in the description. The range is the same.

As used herein, "about," "approximately," "substantially," or "substantially" includes the stated value and an average within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account that Discuss the specific quantities of measurements and errors associated with the measurements (i.e., limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±15%, ±10%, ±5%, for example. Furthermore, the terms "approximately", "approximately", "substantially" or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on the measurement properties, cutting properties or other properties, and can Not one standard deviation applies to all properties.

In the drawings, the size and thickness of layers, regions and features are exaggerated for clarity and are not drawn to actual scale. To facilitate understanding, the same components in the following description will be labeled with the same symbols.

1A to 1D are schematic cross-sectional views of a method for manufacturing a polishing pad according to an embodiment of the present invention.

Referring to FIG. 1A , a base layer 100 is provided, wherein the base layer 100 has a surface S1 and a surface S2 arranged opposite to each other. In this embodiment, surface S1 has a top T1 and a recessed portion R1, and surface S2 has a top T2 and a recessed portion R2. As shown in FIG. 1A , there is a height difference between the top T1 and the recessed portion R1 , and there is a height difference between the top T2 and the recessed portion R2 . That is to say, the base layer 100 has an uneven surface. film layer. In this embodiment, the average depths of the recessed portions R1 and R2 of the base layer 100 may range from about 0.1 nm to about 600 nm, respectively. In addition, although FIG. 1A reveals that the tops T1 and T2 of the base layer 100 are flat, the present invention is not limited thereto. In other embodiments, the average surface roughness (Sa) of the tops T1 and T2 of the base layer 100 may range from about 100 nm to about 300 nm, respectively.

In this embodiment, the material of the base layer 100 may include (but is not limited to): organic materials without strong electronegative functional groups, such as polyethylene, polypropylene or polybutadiene; or materials with strong electronegative functional groups. Organic materials such as ethylene and vinyl acetate copolymers, propylene and vinyl acetate copolymers or polyurethanes.

Next, please refer to FIG. 1B , surface treatment ST is performed on the base layer 100 to form highly electronegative functional groups on the top T1 , the top T2 , the recessed portion R1 and the recessed portion R2 . That is to say, the surface treatment ST is used to chemically modify the surface of the base layer 100 . When the material of the base layer 100 is an organic material that does not have a strong electronegativity functional group, the surface treatment ST can provide strong electronegativity functional groups on the surface of the base layer 100; When the material is an organic material with functional groups, the amount of highly electronegative functional groups originally possessed by the surface of the base layer 100 can be increased through surface treatment ST.

In this embodiment, the surface treatment ST may include corona treatment (Corona), plasma treatment (Plasma), radiation treatment (Photon Irradiation), coating treatment (Priming), flame treatment, ozone gas treatment or halogen-containing gas treatment . In this embodiment, the highly electronegative functional groups may include (but are not limited to): functional groups containing oxygen, fluorine, chlorine or nitrogen, such as hydroxyl, carboxyl, aldehyde, ketone, epoxy, Fluoro, chlorine, cyano, imino or amino.

Please refer to FIGS. 1A and 1B simultaneously. Surface treatment ST increases the height difference between the top T1 and the recessed portion R1 and the height difference between the top T2 and the recessed portion R2. That is to say, the surface treatment ST is used to physically modify the surface of the base layer 100, such as etching. However, the present invention is not limited to this. In other embodiments, the surface treatment ST does not change the height difference between the top T1 and the recessed portion R1 and the height difference between the top T2 and the recessed portion R2. In this embodiment, the average depths of the recessed portions R1 and R2 of the base layer 100 after surface treatment ST can range from about 0.2 nm to about 800 nm, respectively. In addition, although FIG. 1B reveals that the tops T1 and T2 of the base layer 100 after surface treatment ST are flat, the present invention is not limited thereto. In other embodiments, the average surface roughness (Sa) of the tops T1 and T2 of the base layer 100 after the surface treatment ST can be between about 200 nm and about 400 nm respectively.

Next, please refer to FIG. 1C . After the surface treatment ST is performed, the polishing layer 106 is bonded to the top T1 of the base layer 100 through the first adhesive layer 102 . That is to say, in this embodiment, the polishing layer 106 is located above the surface S1 of the base layer 100, the first adhesive layer 102 is disposed between the polishing layer 106 and the base layer 100, and the first adhesive layer 102, the polishing layer 106 and The base layers 100 are in contact with each other. In this embodiment, the polishing layer 106 has surfaces S3 and S4 arranged opposite to each other, wherein the surface S3 of the polishing layer 106 is close to the surface S1 of the base layer 100 . In other words, the surface S3 of the polishing layer 106 is in contact with the first adhesive layer 102 .

In addition, in the process of using the first adhesive layer 102 to bond the polishing layer 106 to the top T1 of the base layer 100, the boundary between the first adhesive layer 102 and the top T1 Hydrogen bonds will be formed on the surface, and hydrogen bonds will be formed on the interface between the first adhesive layer 102 and the polishing layer 106 . That is to say, at this point, the first adhesive layer 102 can be bonded to the polishing layer 106 through the hydrogen bond at the interface between the first adhesive layer 102 and the polishing layer 106 , and the first adhesive layer 102 can be bonded to the polishing layer 106 through the hydrogen bond at the interface between the first adhesive layer 102 and the polishing layer 106 . The adhesive layer 102 is bonded to the base layer 100 due to hydrogen bonding at the interface between the adhesive layer 102 and the top T1. From another point of view, in this embodiment, the base layer 100, the first adhesive layer 102 and the polishing layer 106 after surface treatment ST each have a hydrogen bond donor (hydrogen bond donor) and/or a hydrogen bond acceptor. (hydrogen bond acceptor). For example, in the base layer 100, the first adhesive layer 102 or the polishing layer 106 after surface treatment ST, the hydrogen bond donor can be a hydrogen atom in a hydroxyl group, an amino group or an imino group, and the hydrogen bond acceptor can be Oxygen atoms in hydroxyl, carboxyl, aldehyde, ketone and epoxy groups, fluorine atoms in fluorine groups, chlorine atoms in chlorine groups, or nitrogen atoms in amino and imino groups.

In this embodiment, the material of the first adhesive layer 102 may include (but is not limited to): acrylic glue, silicone glue, rubber glue, ethylene-vinyl acetate copolymer glue, epoxy resin glue. Glue or polyurethane based glue. In this embodiment, the material of the polishing layer 106 may include (but is not limited to): polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, epoxy resin or unsaturated polyester. In addition, in this embodiment, the first adhesive layer 102 is carrier-free glue, but the invention is not limited thereto. In other embodiments, the first adhesive layer 102 may be double-sided tape.

In this embodiment, the method for bonding the polishing layer 106 to the base layer 100 through the first adhesive layer 102 may include: forming the first adhesive layer 102 on the base layer 100 and then bonding it to the polishing layer 106 together, Or the first adhesive layer 102 is formed on the ground After the polishing layer 106 is applied, it is bonded to the base layer 100 together. The first adhesive layer 102 is formed by, for example, bonding or coating.

Please refer to FIG. 1C again, a second adhesive layer 104 is formed below the base layer 100 . In detail, the second adhesive layer 104 is formed on the surface S2 of the base layer 100 . In other words, the base layer 100 is disposed between the first adhesive layer 102 and the second adhesive layer 104 . On the other hand, during the process of forming the second adhesive layer 104 under the base layer 100, hydrogen bonds will be formed at the interface between the second adhesive layer 104 and the top T2. That is to say, at this point, the second adhesive layer 104 can be bonded to the base layer 100 after surface treatment ST through the hydrogen bonding at the interface between the second adhesive layer 104 and the top T2. From another point of view, in this embodiment, the base layer 100 and the second adhesive layer 104 after surface treatment ST respectively have a hydrogen bond donor (hydrogen bond donor) and/or a hydrogen bond acceptor (hydrogen bond acceptor). ). For example, in the base layer 100 or the second adhesive layer 104 after surface treatment ST, the hydrogen bond donor can be a hydrogen atom in a hydroxyl group, an amino group or an imino group, and the hydrogen bond acceptor can be a hydroxyl group, a carboxyl group, The oxygen atom in the aldehyde group, ketone group, and epoxy group, the fluorine atom in the fluorine group, the chlorine atom in the chlorine group, or the nitrogen atom in the amino group and imino group.

In this embodiment, the material of the second adhesive layer 104 may include (but is not limited to): acrylic glue, silicone glue, rubber glue, ethylene-vinyl acetate copolymer glue, epoxy resin Glue or polyurethane glue. In addition, in this embodiment, the second adhesive layer 104 is a carrier-free glue, but the invention is not limited thereto. In other embodiments, the second adhesive layer 104 may be double-sided tape.

In some embodiments, the first adhesive layer 102 and the second adhesive layer 104 can be formed in the same manufacturing process. In other embodiments, the first adhesive layer 102 and the second adhesive layer 104 may be formed in different processes and sequentially. In some embodiments, bonding the polishing layer 106 to the base layer 100 may be performed after forming the second adhesive layer 104 . In other embodiments, fitting the polishing layer 106 to the base layer 100 may be performed before forming the second adhesive layer 104 .

At this point, the polishing pad semi-finished product 10 is formed, as shown in FIG. 1C. Although the polishing pad semi-finished product 10 of FIG. 1C includes the second adhesive layer 104, the present invention is not limited thereto. In other embodiments, the polishing pad semi-finished product 10 may not have an adhesive layer formed on the surface S2 of the base layer 100 .

Next, please refer to FIG. 1C and FIG. 1D at the same time to perform the anchoring processing step AP on the polishing pad semi-finished product 10 so that the anchoring bonding is formed between the first adhesive layer 102 and the recessed portion R1 of the base layer 100, and the first adhesive layer 102 A hydrogen bond is formed at the interface with the recessed portion R1. That is to say, up to this point, in addition to the hydrogen bonding through the interface between the first adhesive layer 102 and the top T1 , the first adhesive layer 102 also passes through the anchoring bonding formed between the first adhesive layer 102 and the recessed portion R1 and The first adhesive layer 102 is bonded to the base layer 100 by hydrogen bonding at the interface between the first adhesive layer 102 and the recessed portion R1. In this way, by performing the anchoring process step AP, the adhesion force between the first adhesive layer 102 and the base layer 100 is improved.

As shown in FIG. 1D , during the anchoring processing step AP, the first adhesive layer 102 will extend into the recessed portion R1 to form anchoring adhesion. In this embodiment, the anchoring treatment step AP may include a heating treatment step, a high frequency treatment step or a microwave treatment step. In this embodiment, the anchoring processing step AP can make the first adhesive layer 102 The temperature is above its softening temperature and below its degradation temperature. In other words, during the execution of the anchoring process step AP, the first adhesive layer 102 will soften and improve its fluidity, whereby the first adhesive layer 102 will easily flow into the recessed portion R1. In this embodiment, the anchoring process step AP causes the temperature of the first adhesive layer 102 to be between about 50°C and about 70°C. When the temperature of the first adhesive layer 102 is within the aforementioned range, there is excellent adhesion between the first adhesive layer 102 and the base layer 100 .

On the other hand, during the execution of the anchoring process step AP, the distance between the first adhesive layer 102 and the surface of the recessed portion R1 is closer due to the formation of anchoring adhesion, thus promoting the formation of hydrogen at the interface between the first adhesive layer 102 and the recessed portion R1 key.

Similarly, according to the foregoing description of the first adhesive layer 102 and the recessed portion R1 during the anchoring process step AP, those with ordinary skill in the art should understand that when the polishing pad semi-finished product 10 is subjected to the anchoring process step AP, the third Anchor bonding can also be formed between the second adhesive layer 104 and the recessed portion R2 of the base layer 100, and a hydrogen bond can also be formed at the interface between the second adhesive layer 104 and the recessed portion R2. In this way, by performing the anchoring processing step AP, the adhesion force between the second adhesive layer 104 and the base layer 100 is improved. For the rest, please refer to the foregoing description of the first adhesive layer 102 and the recessed portion R1 during the execution of the anchoring process step AP, which will not be described again here.

In addition, in this embodiment, the anchoring treatment step AP needs to be performed on the polishing pad semi-finished product 10 within 150 hours after the surface treatment ST is performed on the base layer 100 . When the anchoring process step AP is performed on the polishing pad semi-finished product 10 within the aforementioned time range, the first adhesive layer 102 and the base layer 100 have relatively stable adhesive properties.

Table 1 below records: the base layer 100 is adhered to the first surface after surface treatment ST The layer 102 is adhered, and then the results of the adhesion between the base layer 100 and the first adhesive layer 102 are tested at different temperatures, with whether the anchoring step AP is performed as a variable. The material of the base layer 100 of the polishing pad is polyethylene and the material of the first adhesive layer 102 is acrylic glue. The surface treatment ST is a corona treatment, and the anchoring treatment step AP is a heating treatment step with a temperature condition of 60°C.

It can be seen from the contents of the above Table 1 that compared to the condition that the base layer 100 is subjected to the surface treatment ST and then the anchoring treatment step AP is not performed, the base layer 100 is measured under the condition that the base layer 100 is subjected to the surface treatment ST and the anchoring treatment step AP is performed. The adhesion between 100 and the first adhesive layer 102 is better. Furthermore, within 150 hours after the surface treatment ST of the base layer 100, the adhesion force measured by performing the anchoring treatment step AP on the base layer 100 increased by more than 50% compared to the adhesion force measured without performing the anchoring treatment step AP. Above, therefore, performing the anchoring treatment step AP on the base layer 100 within 150 hours after the surface treatment ST of the base layer 100 can make the base layer 100 and the first adhesive layer The adhesive layers 102 have relatively stable adhesion properties. However, when the base layer 100 is subjected to the surface treatment ST for more than 150 hours before the anchoring process step AP is performed on the base layer 100, the measured adhesion force increases to a smaller extent than the measured adhesion force without the anchoring process step AP.

At this point, the polishing pad 20 is formed, as shown in FIG. 1D. In this embodiment, the polishing pad 20 includes a polishing layer 106, a base layer 100 and a first adhesive layer 102. The first adhesive layer 102 is disposed between the polishing layer 106 and the base layer 100. The first adhesive layer 102 and the base layer The interface between the top T1 of the base layer 100 has a hydrogen bond, and the interface between the first adhesive layer 102 and the recessed portion R1 of the base layer 100 has a hydrogen bond. In other words, compared with the polishing pad semi-finished product 10 in which the first adhesive layer 102 only has hydrogen bonds at the interface between the top T1 of the base layer 100, the adhesion between the first adhesive layer 102 of the polishing pad 20 and the base layer 100 is Greater force.

In addition, in this embodiment, the polishing pad 20 may further include a second adhesive layer 104 disposed under the base layer, whereby the polishing pad 20 and the carrying platform (not shown) can be bonded. As described above for the polishing pad semi-finished product 10, those of ordinary skill in the art will understand that in other embodiments, the polishing pad 20 may not have the second adhesive layer 104 formed on the surface S2 of the base layer 100. For example, when the polishing pad is fixed on the carrying platform of the polishing equipment through adsorption (vacuum adsorption or electrostatic adsorption), the polishing pad may not have a second adhesive layer.

It is worth noting that in the manufacturing method of the polishing pad 20, the polishing layer 106 is adhered to the top T1 of the base layer 100 that has undergone surface treatment ST by using the first adhesive layer 102, and the first adhesive layer 102 and the top T1 are The interface between them forms hydrogen bonds, After the polishing pad semi-finished product 10 is formed, the polishing pad semi-finished product 10 is subjected to the anchoring processing step AP to form an anchoring bond between the first adhesive layer 102 and the recessed portion R1 of the base layer 100, and to make the first adhesive layer 102 and the recessed portion The interface between R1 forms hydrogen bonds, thereby improving the adhesion between the first adhesive layer 102 and the base layer 100 . In this way, the polishing pad 20 can have improved stability.

Similarly, in the manufacturing method of the polishing pad 20, the anchoring process step AP is performed on the polishing pad semi-finished product 10 having the second adhesive layer 104 on the surface S2 of the base layer 100 that has undergone the surface treatment ST, so that the second adhesive layer 104 forms an anchor bond with the recessed portion R2 of the base layer 100, and forms a hydrogen bond at the interface between the second adhesive layer 104 and the recessed portion R2, thereby improving the bonding strength between the second adhesive layer 104 and the base layer 100. Adhesion. In this way, the polishing pad 20 can have better stability. In addition, the same technology can also be applied to the adhesion between the adhesive layer and other layer surfaces to obtain better adhesion stability. The other layer surfaces are, for example, the back side of the polishing layer, additionally configured between the polishing layer and the base layer. The upper surface and/or lower surface of the support layer between them, or the upper surface of another base layer additionally disposed below the base layer.

In order to confirm that the manufacturing method of the polishing pad proposed by the present invention can improve the adhesion between the adhesive layer (such as the first adhesive layer 102) and the base layer 100, an actual adhesion test was conducted.

The following Table 2 records: After the base layer 100 and the first adhesive layer 102 after surface treatment ST are adhered, the operating conditions of the anchoring treatment step AP are used as a variable, and the base layer 100 and the first adhesive layer 102 are tested at different temperatures. The result of adhesion between. The base layer 100 of the polishing pad is made of polyethylene and the first adhesive layer 102 is The material is acrylic glue, the surface treatment ST is corona treatment, and the anchoring treatment step AP is heat treatment step.

It can be seen from the content of the above Table 2 that compared with the polishing pad that does not undergo the anchoring treatment step AP during the manufacturing process, the base layer 100 of the polishing pad that undergoes the anchoring treatment step AP at a temperature of 40°C or above or 50°C or above during the manufacturing process is different from the first The adhesive layers 102 all have better adhesion. On the other hand, it can be seen from the content of the above Table 2 that when the temperature condition of the anchoring process step AP is between 50°C and 70°C, the base layer 100 of the polishing pad and the first adhesive layer 102 have the highest adhesion. ; When the temperature condition of the anchoring process step AP is 80°C, although some adhesion forces are higher than those when the temperature condition of the anchoring process step AP is 50°C or 60°C, they all show a downward trend. This result shows that the adhesive layer It has deteriorated itself and is not suitable for long term use. Generally speaking, when using a polishing pad for polishing, heat will be generated due to friction, which will increase the temperature of the polishing pad and accelerate the deterioration of the adhesive layer, thus affecting the polishing quality under long-term use. In view of this, when the temperature condition of the anchoring process step AP is between 50°C and 70°C, the adhesive force between the base layer 100 and the first adhesive layer 102 of the polishing pad is relatively stable.

The following Table 3 records: After the base layer 100 and the first adhesive layer 102 after surface treatment ST are adhered, the operating conditions of the anchoring treatment step AP are used as a variable, and the base layer 100 and the first adhesive layer 102 are tested at different temperatures. The result of adhesion between. The material of the base layer 100 of the polishing pad is polyurethane and the material of the first adhesive layer 102 is an acrylic adhesive. The surface treatment ST is a corona treatment, and the anchoring treatment step AP is a heating treatment step with a temperature condition of 60°C. .

It can be seen from the contents of Table 3 above that when the material of the base layer 100 is polyurethane itself with strong electronegative functional groups, the surface treatment ST is used to increase the amount of strong electronegative functional groups on the surface of the base layer 100, and then the anchoring treatment is performed. Step AP can increase the adhesion between the base layer 100 and the first adhesive layer 102 regardless of whether the adhesion test is performed at normal temperature or at 70°C. Since the base layer 100 made of polyurethane itself has strong electronegative functional groups, that is to say, the interface between the first adhesive layer 102 and the top T1 of the base layer 100 already has a certain number of hydrogen bonds. When the base layer 100 is surfaced, When ST is processed, although the strong electronegativity functional groups on the surface of the base layer 100 will still increase, the increase is smaller than if the base layer 100 is made of a material that does not have strong electronegativity functional groups (as shown in Table 2). Therefore, the base layer The adhesive force between the layer 100 and the adhesive layer 102 increases to a smaller extent.

In addition, in order to more clearly describe the manufacturing method of the polishing pad proposed by the present invention, This method can improve the adhesion between the adhesive layer (such as the first adhesive layer 102 and the second adhesive layer 104) and the base layer 100. Hereinafter, the present invention will be further described with reference to the polishing pad 30 shown in FIG. 2 . Figure 2 is a schematic cross-sectional view of a polishing pad according to another embodiment of the present invention. It must be noted that the following embodiments use the element symbols and part of the content of the previous embodiments, where the same or similar symbols are used to represent the same or similar elements, and the description of the same technical content is omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be repeated in the following embodiments.

Please refer to FIG. 1D and FIG. 2 simultaneously. The polishing pad 30 is a structure formed after performing a damage mode test on the polishing pad 20 . The failure mode test is a test in which an external force is applied to a polishing pad (for example, the polishing pad 20) as a test product to destroy its bonding interface, and the failure mode of the interface is observed using a microscope. In view of this, please refer to FIG. 1D and FIG. 2 again. The polishing pad 30 is a structure in which the bonding interface between the polishing layer 106 and the base layer 100 of the polishing pad 20 is destroyed.

In this embodiment, the polishing pad 30 includes an adhesive pattern 108 a disposed on the surface S1 of the base layer 100 . Specifically, in this embodiment, the area of the adhesive pattern 108a accounts for between about 10% and about 90% of the area of the surface S1 (for example, between 20% and 80%, between 30% and 70%). , or between 40% and 60%, but this does not limit the invention). That is to say, the adhesive pattern 108a does not completely cover the surface S1 of the base layer 100. In addition, in this embodiment, the polishing pad 30 further includes an adhesive pattern 108 b disposed on the surface S3 of the polishing layer 106 . Specifically, in this embodiment, the area of the adhesive pattern 108b accounts for about 10% to about 90% of the area of the surface S3. (for example, between 20% and 80%, between 30% and 70%, or between 40% and 60%, but this does not limit the invention). That is to say, the adhesive pattern 108b does not completely cover the surface S3 of the polishing layer 106.

As mentioned above, the polishing pad 30 has a structure after the adhesive interface between the polishing layer 106 and the base layer 100 is destroyed. Therefore, the adhesion pattern 108a and the adhesion pattern 108b are the structures formed after the first adhesion layer 102 is destroyed. . That is to say, after performing the damage mode test on the adhesive interface between the polishing layer 106 and the base layer 100 , a part of the first adhesive layer 102 remains on the surface S1 of the base layer 100 , and the other part remains on the polishing layer 106 on the Surface S3. In other words, the failure mode of the polishing pad 30 is a mixed failure rather than an interface failure. This means that there is excellent adhesion between the first adhesive layer 102 and the base layer 100 and between the first adhesive layer 102 and the polishing layer 106 to withstand the external force on the interface between the first adhesive layer 102 and the base layer 100 and damage caused by the interface between the first adhesive layer 102 and the polishing layer 106 .

In addition, in this embodiment, the interface between the surface S1 of the base layer 100 and the adhesive pattern 108a has hydrogen bonds. As mentioned above, in the polishing pad 20 , the interface between the first adhesive layer 102 and the top T1 of the surface S1 has a hydrogen bond, and the interface between the first adhesive layer 102 and the recessed portion R1 of the surface S1 has a hydrogen bond. Therefore, in the polishing pad 30, the interface between the adhesion pattern 108a and the top T1 of the surface S1 also has hydrogen bonds, and the interface between the adhesion pattern 108a and the recessed portion R1 of the surface S1 also has hydrogen bonds.

In this embodiment, the adhesive patterns 108a and 108b have The same material as the first adhesive layer 102 includes, for example (but is not limited to): acrylic adhesive, silicone adhesive, rubber adhesive, ethylene-vinyl acetate copolymer adhesive, epoxy resin adhesive or polyurethane. Tie glue.

On the other hand, since the first adhesive layer 102 as a carrier-free glue will be in direct contact with the polishing layer 106, the polishing pad 30 includes an adhesive pattern 108b disposed on the surface S3 of the polishing layer 106. However, the present invention is not limited to this. In other embodiments, the structure formed after performing the damage mode test on the polishing pad 20 does not have an adhesion pattern on the surface S3 of the polishing layer 106 . For example, when the first adhesive layer 102 is double-sided tape, after a failure mode test is performed on the adhesive interface between the polishing layer 106 and the base layer 100, a part of the first adhesive layer 102 remains on the base layer 100. On the surface S1, another part of the first adhesive layer 102 will remain on the carrier of the double-sided tape.

Figure 3 is a flow chart of a grinding method according to an embodiment of the present invention. This grinding method is suitable for grinding objects. Specifically, this grinding method can be applied to the grinding process of manufacturing industrial components, such as components used in the electronics industry, which can include semiconductors, integrated circuits, microelectromechanical, energy conversion, communications, optics, storage disks, and Displays and other components, and the objects used to make these components may include semiconductor wafers, IIIV wafers, storage element carriers, ceramic substrates, polymer substrates, glass substrates, etc., but are not intended to limit the invention. Scope.

Please refer to Figure 3. First, step S10 is performed to provide a polishing pad. Specifically, in this embodiment, the polishing pad may be any polishing pad described in the previous embodiments, such as the polishing pad 20 . The relevant description of the polishing pad 20 has been mentioned above. This is explained in detail, so I won’t go into details here.

Next, step S12 is performed to apply pressure to the object, whereby the object is pressed onto the polishing pad and comes into contact with the polishing pad. In detail, as mentioned above, the object will be in contact with the polishing layer 106 . In addition, the method of applying pressure to the object is, for example, using a carrier capable of holding the object.

After that, step S14 is performed to provide relative movement between the object and the polishing pad, so as to use the polishing pad to perform a polishing process on the object to achieve the purpose of planarization. Specifically, a method of providing relative movement between the object and the polishing pad is, for example, by rotating the bearing platform to drive the polishing pad fixed on the bearing platform to rotate in the rotation direction.

To sum up, the manufacturing method of the polishing pad of the present invention includes the following steps: performing surface treatment on the base layer to form the top and recessed portions of the base layer with strong electronegativity functionality; using the first adhesive layer to adhere the polishing layer on the top of the base layer, and form a hydrogen bond at the interface between the first adhesive layer and the top to form a polishing pad semi-finished product; and perform an anchoring process on the polishing pad semi-finished product to make the first adhesive layer and the recessed portion of the base layer An anchor adhesion is formed between them, and a hydrogen bond is formed at the interface between the first adhesive layer and the recessed portion, thereby improving the adhesion between the first adhesive layer and the base layer. In this way, the polishing pad of the present invention can have better stability.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

20: Polishing pad

100: Basal layer

102: First adhesive layer

104:Second adhesive layer

106:Grinding layer

AP: Anchor handling steps

R1, R2: depression

S1, S2, S3, S4: Surface

T1, T2: top

Claims (19)

A method of manufacturing a polishing pad, including: providing a base layer, the surface of the base layer having a top and a recessed portion; performing surface treatment on the base layer to form a strong electronegativity function based on the top and the recessed portion; Utilizing the first adhesive layer to adhere the polishing layer to the top of the base layer, and forming a hydrogen bond at the interface between the first adhesive layer and the top to form a polishing pad semi-finished product; and to the The semi-finished polishing pad undergoes an anchoring treatment step to form an anchoring bond between the first adhesive layer and the recessed portion of the base layer, and to form an interface between the first adhesive layer and the recessed portion. hydrogen bonding. The method for manufacturing a polishing pad as described in item 1 of the patent application, wherein the surface treatment includes corona treatment, plasma treatment, radiation treatment, coating treatment, flame treatment, ozone gas treatment or halogen-containing gas treatment. The method for manufacturing a polishing pad as described in item 1 of the patent application, wherein the highly electronegative functional groups include functional groups containing fluorine, chlorine, oxygen or nitrogen. The method for manufacturing a polishing pad as described in item 1 of the patent application, wherein the surface treatment increases the height difference between the top and the recessed portion. The method for manufacturing a polishing pad as described in item 1 of the patent application, wherein before the surface treatment is performed, the base layer does not have strong electronegative functional groups. The method for manufacturing a polishing pad as described in item 1 of the patent application, wherein the base layer before the surface treatment has less strongly electronegative functionality than the base layer after the surface treatment. base. The method for manufacturing a polishing pad as described in item 1 of the patent application, wherein the anchoring treatment step includes a heating treatment step, a high frequency treatment step or a microwave treatment step. In the method for manufacturing a polishing pad as described in item 1 of the patent application, the anchoring treatment step causes the temperature of the first adhesive layer to be higher than its softening temperature and lower than its deterioration temperature. In the method for manufacturing a polishing pad as described in item 1 of the patent application, the anchoring treatment step causes the temperature of the first adhesive layer to be between 50°C and 70°C. The manufacturing method of a polishing pad as described in item 1 of the patent application, wherein the anchoring treatment step is performed on the polishing pad semi-finished product within 150 hours after the surface treatment is performed on the base layer. The manufacturing method of the polishing pad described in item 1 of the patent application further includes forming a second adhesive layer under the base layer before forming the polishing pad semi-finished product. A polishing pad, which is a structure formed after a damage mode test, including: a base layer having a first surface and a second surface opposite to each other; a polishing layer located above the first surface of the base layer, and have each other Opposing third and fourth surfaces, wherein the third surface is close to the first surface; and a first adhesive pattern disposed on the first surface of the base layer, wherein the first adhesive pattern The area accounts for between 10% and 90% of the area of the first surface. The polishing pad as described in item 12 of the patent application, wherein the material of the polishing layer includes polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, epoxy resin or unsaturated polyester . The polishing pad as described in item 12 of the patent application, wherein the material of the base layer includes polyethylene, polypropylene, a copolymer of ethylene and ethylene vinyl acetate, a copolymer of propylene and ethylene vinyl acetate, polyethylene Butadiene or polyurethane. As for the polishing pad described in item 12 of the patent application, the material of the first adhesive pattern includes acrylic adhesive, silicone adhesive, rubber adhesive, ethylene-vinyl acetate copolymer adhesive, epoxy adhesive, etc. Resin-based glue or polyurethane-based glue. The polishing pad as described in claim 12 of the patent application further includes a second adhesion pattern disposed on the third surface of the polishing layer, wherein the area of the second adhesion pattern occupies an area of the third surface. Between 10% and 90% of the area. As for the polishing pad described in claim 16 of the patent application, the material of the second adhesive pattern includes acrylic adhesive, silicone adhesive, rubber adhesive, ethylene-vinyl acetate copolymer adhesive, epoxy adhesive, etc. Resin-based glue or polyurethane-based glue. The polishing pad described in claim 12 of the patent application further includes an adhesive layer disposed on the second surface of the base layer. The polishing pad according to claim 12, wherein the interface between the first surface and the first adhesion pattern has hydrogen bonds.

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