TW201638264A - Cutting sheet and method for manufacturing semiconductor wafer - Google Patents
Cutting sheet and method for manufacturing semiconductor wafer Download PDFInfo
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- TW201638264A TW201638264A TW105105220A TW105105220A TW201638264A TW 201638264 A TW201638264 A TW 201638264A TW 105105220 A TW105105220 A TW 105105220A TW 105105220 A TW105105220 A TW 105105220A TW 201638264 A TW201638264 A TW 201638264A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
- C09J175/04—Polyurethanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
- C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- H10P54/00—
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- H10P72/7402—
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
本發明係關於一種切割片與半導體晶片之製造方法。其中,本發明之切割片係具有基材3與其單面上所形成的中間層2,以及中間層2之上所形成的黏接劑層1的切割片10,黏接劑層1含有分子內具有能量線硬化性雙鍵的化合物,黏接劑層1硬化前於23℃時的儲存模數G’比中間層2於23℃時的儲存模數G’大,對於黏接劑層1硬化前的切割片10,以JISZ0237:2000為基準對矽晶圓實行180°撕除的黏接力測試時,所測得的黏接力係2000mN/25mm以上,黏接劑層1硬化前於23℃時的損失因數tanδ係0.23以上。透過這種切割片10,將切割片10黏貼於半導體晶圓30上所獲得的積層體,即使在所設定的時間內靜置,也很難發生部分剝離。 The present invention relates to a method of manufacturing a dicing sheet and a semiconductor wafer. Wherein, the dicing sheet of the present invention has the substrate 3 and the intermediate layer 2 formed on one side thereof, and the dicing sheet 10 of the adhesive layer 1 formed on the intermediate layer 2, and the adhesive layer 1 contains the intramolecular layer A compound having an energy ray-curable double bond, the storage modulus G' at 23 ° C before curing of the adhesive layer 1 is larger than the storage modulus G' of the intermediate layer 2 at 23 ° C, and hardening for the adhesive layer 1 When the front dicing sheet 10 is subjected to a 180° peeling adhesion test based on JISZ0237:2000, the measured adhesive force is 2000 mN/25 mm or more, and the adhesive layer 1 is hardened before 23 ° C. The loss factor tan δ is 0.23 or more. By the dicing sheet 10, the laminated body obtained by adhering the dicing sheet 10 to the semiconductor wafer 30 is hard to be partially peeled off even if it is left to stand for a set time.
Description
本發明係關於一種切割片,尤其是將半導體晶圓按每個電路切割成多個,製成半導體晶片時,用於固定半導體晶圓的切割片;此外,本發明係關於一種使用該切割片的半導體晶片之製造方法。特別是,本發明的切割片適合用於固定、切斷表面具有突起狀電極的半導體晶圓,例如具有矽穿孔電極(TSV)的半導體晶圓。 The present invention relates to a dicing sheet, in particular, a dicing sheet for fixing a semiconductor wafer when a semiconductor wafer is cut into a plurality of circuits for each semiconductor wafer; and the present invention relates to the use of the dicing sheet A method of manufacturing a semiconductor wafer. In particular, the dicing sheet of the present invention is suitable for use in fixing and cutting a semiconductor wafer having a projecting electrode on its surface, such as a semiconductor wafer having a ruthenium perforated electrode (TSV).
半導體晶圓的表面形成電路後,實行對於晶圓的背面研磨加工,實行調整晶圓厚度的背面研磨製程,以及將晶圓切割成多個所設定的晶片大小的切割製程。此外,進行背面研磨製程時,有時需實行如於背面蝕刻處理等伴隨發熱的加工處理,以及如於背面沈積金屬膜等需在高溫下實行之處理。將以晶片大小切割成多個的半導體晶圓(半導體晶片)頂取後移送至下一個製程。 After the surface of the semiconductor wafer is formed into a circuit, a back surface polishing process for the wafer is performed, and a back surface polishing process for adjusting the thickness of the wafer and a cutting process for cutting the wafer into a plurality of set wafer sizes are performed. Further, in the case of performing the back surface polishing process, it is sometimes necessary to carry out a processing such as a back surface etching treatment with heat generation, and a process such as depositing a metal film on the back surface at a high temperature. The semiconductor wafer (semiconductor wafer) cut into a plurality of wafer sizes is taken up and transferred to the next process.
近來隨著IC卡的普及,其構成部材半導體晶圓越來越薄型化,因此,原有厚度約350μm左右的晶圓,被要求需薄化至50~100μm甚至以下。 Recently, with the spread of IC cards, the constituent semiconductor wafers have become thinner and thinner. Therefore, wafers having a thickness of about 350 μm are required to be thinned to 50 to 100 μm or less.
此外,為了因應電子電路的大容量化、高機能化,正進行將半導體晶片立體積層的積層電路開發中。雖然這種積 層電路中,一般會將原有的半導體晶片的導電連接透過線結合(Wire bonding)來實行,最近由於小型化.高機能化的必要性,並不進行線結合,而是開發有效率的方法,如於半導體晶片形成電路的面上,設置貫穿至背面的電極(貫穿電極),直接於上下晶片之間導電連接的方法。 In addition, in order to cope with the increase in capacity and high performance of electronic circuits, a laminated circuit for forming a volume layer of a semiconductor wafer is being developed. Although this product In the layer circuit, the conductive connection of the original semiconductor wafer is generally carried out by wire bonding, and recently due to miniaturization. The necessity of high performance does not involve wire bonding, but develops an efficient method, such as providing an electrode (through electrode) penetrating to the back surface on the surface of the semiconductor wafer forming circuit, and electrically connecting directly between the upper and lower wafers. Methods.
就這種穿孔電極晶片的製造方法而言,舉例來說,可於半導體晶圓所設的位置,藉由電漿(Plasma)準備貫穿孔,對此貫穿孔注入銅導電體後進行蝕刻,在半導體晶圓表面形成電路與穿孔電極。形成電路與穿孔電極的半導體晶圓,利用在基材薄膜上形成黏接劑層的切割片切割,藉此獲得個別的穿孔電極晶片。 In the method for manufacturing the perforated electrode wafer, for example, a through hole may be prepared by a plasma at a position where the semiconductor wafer is provided, and a copper conductor may be injected into the through hole to be etched. The surface of the semiconductor wafer forms a circuit and a via electrode. The semiconductor wafer forming the circuit and the via electrode is cut by a dicing sheet forming an adhesive layer on the substrate film, thereby obtaining an individual perforated electrode wafer.
如上上述,專利文獻中揭示了於為了獲得穿孔電極晶片的切割製程中,藉由在基材薄膜上形成的黏接劑層擠壓於黏貼面上突出的穿孔電極使其變形,於與電極突出部類似形狀的黏接劑層之凹陷處置入電極,將形成穿孔電極的半導體晶圓黏貼.固定於切割片,接著進行切割,藉此獲得個別的穿孔電極晶片的方法(專利文獻1,2)。但,專利文獻1、2裡所記載的切割片中,若在黏接劑層置入穿孔電極,穿孔電極之間的狹窄範圍內有可能會產生黏接劑的殘渣,該殘渣會污染晶片表面,導致半導體晶片的信賴性低下。專利文獻1、2的方法中,雖然有提出減少這種殘渣殘餘的方法,但仍無法完全消除殘渣殘留的可能性,此外,專利文獻1、2中所記載的切割片中,為了置入穿孔電極,須於切割時將彈性調低,因此,切割時容易因為震動而導致晶片崩裂(Chipping)。 As described above, the patent document discloses that in the cutting process for obtaining a perforated electrode wafer, the adhesive layer formed on the base film is pressed against the protruding perforated electrode to be deformed, and protruded from the electrode. A recess of a similarly shaped adhesive layer is disposed in the electrode, and the semiconductor wafer forming the perforated electrode is pasted. A method of fixing to a dicing sheet, followed by dicing, thereby obtaining an individual perforated electrode wafer (Patent Documents 1, 2). However, in the dicing sheet described in Patent Documents 1 and 2, if a perforated electrode is placed in the adhesive layer, a residue of the adhesive may be generated in a narrow range between the perforated electrodes, and the residue may contaminate the surface of the wafer. This leads to low reliability of semiconductor wafers. In the methods of Patent Documents 1 and 2, there is a method of reducing the residue of the residue. However, in the dicing sheets described in Patent Documents 1 and 2, in order to insert the perforation, it is not possible to completely eliminate the residue. The electrode must be lowered in elasticity when cutting, so that the chip is easily chipped due to vibration during cutting.
為了解決上述問題,專利文獻3中記載了作為可在突起狀電極(穿孔電極)之間不殘留黏接劑層的殘渣、晶片不損壞的情況下,進行切割與頂取的切割片,其特徵係,由基材與其單面上形成的中間層,與中間層上形成的厚度為8~30μm的黏接劑層組成,黏接劑層含有分子內含有能量線硬化性雙鍵的化合物,黏接劑層硬化前在23℃時的儲存模數G’,超過中間層在23℃時的儲存模數G’的4倍。於以40μm節距(Pitch)等間距的方式形成3行3列高度15μm、直徑15μm的圓柱形電極的晶圓上,透過黏接劑層黏貼的情況下,在以3行3列形成的圓柱形電極之中心電極中,該電極的高7.5μm以下的部分不接觸黏接劑層。 In order to solve the above problem, Patent Document 3 describes a dicing sheet which is cut and topped as a residue which does not leave a residue of the adhesive layer between the protruding electrodes (perforated electrodes), and which is not damaged. The adhesive layer consists of an adhesive layer having a thickness of 8 to 30 μm formed on the intermediate layer and a thickness of 8 to 30 μm formed on the intermediate layer, and the adhesive layer contains a compound containing an energy ray hardening double bond in the molecule, and is adhered. The storage modulus G' at 23 ° C before the adhesion layer hardens exceeds 4 times the storage modulus G' of the intermediate layer at 23 ° C. A wafer formed of three rows and three columns in a row of three rows and three columns of a columnar electrode having a height of 15 μm and a diameter of 15 μm is formed at a pitch of 40 μm pitch (Pitch). In the center electrode of the shaped electrode, the portion of the electrode having a height of 7.5 μm or less does not contact the adhesive layer.
此外,與專利文獻3裡所記載的發明相關聯的,含有由含胺甲酸乙酯硬化物形成之中間層之切割片亦記載於專利文獻4中。 Further, a dicing sheet containing an intermediate layer formed of a cured product containing urethane is also described in Patent Document 4, in association with the invention described in Patent Document 3.
[專利文獻1]日本專利特開第2006-202926號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2006-202926
[專利文獻2]日本專利特開第2010-135494號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-135494
[專利文獻3]日本專利特開第2013-098408號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2013-098408
[專利文獻4]日本專利特開第2013-197390號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2013-197390
如圖2所示專利文獻3與4中記載了黏貼於半導體晶圓30時,黏接劑層21不追蹤突起狀電極31之間,在突 起狀電極31形成的區域(電極形成區域)的周緣30A上追蹤的切割片20,透過這種切割片20,黏接劑層21的殘渣便不會殘留於突起狀電極31之間,並可抑制因聚合不全而於電極形成區域的周緣30A上殘留殘渣。此外,在電極形成區域的周緣30A上,將黏接劑層21黏合於半導體晶圓30上,由於黏接劑層不會變得過度柔軟,可於切割時防止水的侵入,切割性十分優秀,亦可防止晶片崩裂的發生。此外,藉由將黏接劑層21以能量線硬化,便可控制其黏接力,除了容易頂取晶片,亦可防止晶片的損壞。 As shown in Patent Documents 3 and 4 shown in FIG. 2, when the semiconductor wafer 30 is pasted, the adhesive layer 21 does not follow the projection between the protruding electrodes 31. The dicing sheet 20 traced on the peripheral edge 30A of the region (electrode forming region) where the emergent electrode 31 is formed, through the dicing sheet 20, the residue of the adhesive layer 21 does not remain between the protruding electrodes 31, and It is suppressed that residue remains on the peripheral edge 30A of the electrode formation region due to polymerization incompleteness. Further, the adhesive layer 21 is adhered to the semiconductor wafer 30 on the peripheral edge 30A of the electrode formation region, since the adhesive layer does not become excessively soft, and water can be prevented from intruding during cutting, and the cutting property is excellent. It also prevents the occurrence of chip cracking. In addition, by adhering the adhesive layer 21 to the energy line, the adhesion can be controlled, and in addition to easy picking up of the wafer, damage to the wafer can be prevented.
與此相同,專利文獻3與4裡記載的切割片20雖然具有優秀的特性,近來將切割片20黏貼於半導體晶圓30所獲得的積層體黏貼後,至切割製程開始為止,在所設定的期間靜止的情況下,對電極形成區域的周緣30A進行追蹤,判明了原本完好地黏貼於半導體晶圓30的黏接劑層21,有可能會在半導體晶圓30上,發生部分的剝離現象(本發明專利說明書中,亦稱這種現象為「部分剝離」)。具體而言,圖3中顯示為電極形成區域的周緣30A的部分,為黏接劑層21部分自半導體晶圓30剝離而成的部分,即產生部分剝離的部分,根據這部分剝離為基礎的黏接劑層21的剝離程度很大時,即產生部分剝離的面積很寬的情況下,藉由上述積層體進行切割製程,對切割作業的穩定性造成影響。 Similarly, in the dicing sheet 20 described in Patent Documents 3 and 4, although the dicing sheet 20 has excellent characteristics, the dicing sheet 20 is recently adhered to the layered body obtained by the semiconductor wafer 30, and is set until the cutting process starts. When the period is stationary, the peripheral edge 30A of the electrode formation region is traced, and it is found that the adhesive layer 21 which is originally adhered to the semiconductor wafer 30 is completely adhered to the semiconductor wafer 30, and partial peeling may occur on the semiconductor wafer 30 ( In the patent specification of the present invention, this phenomenon is also referred to as "partial peeling". Specifically, the portion shown as the peripheral edge 30A of the electrode formation region in FIG. 3 is a portion where the adhesive layer 21 is partially peeled off from the semiconductor wafer 30, that is, a portion where partial peeling occurs, based on the partial peeling. When the degree of peeling of the adhesive layer 21 is large, that is, when the area where partial peeling occurs is wide, the cutting process by the above laminated body affects the stability of the cutting operation.
本發明係有鑒於上述問題而完成,目的在於提供將切割片黏貼於半導體晶圓所獲得的基層體,於所設定的期間 內,具體來說,靜置24小時左右也不容易發生如上述相同的部分剝離之切割片,以及利用此切割片進行的半導體晶片之製造方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a substrate obtained by adhering a dicing sheet to a semiconductor wafer for a set period of time. Specifically, it is not easy to cause the same partially peeled dicing sheet as described above, and a method of manufacturing a semiconductor wafer by using the dicing sheet.
為了達到上述目的,本發明所提供的內容如下。 In order to achieve the above object, the present invention provides the following contents.
(1)本發明所有關的切割片係具備基材與其單面上形成的中間層,以及上述中間層上所形成的黏接劑層之切割片,其特徵在於:上述黏接劑層含有分子內含有能量線硬化性雙鍵之化合物,上述黏接劑層硬化前在23℃時的儲存模數G’,比上述中間層的在23℃時的儲存模數G’大,對上述黏接劑層硬化前之切割片根據JIS Z0237:2000為基準,對矽鏡面晶圓進行180°撕除黏接力測試時,所測得的黏接力係2000mN/25mm以上,上述黏接劑層硬化前在23℃時的損失因數tanδ係0.23以上。 (1) A dicing sheet according to the present invention comprises a substrate and an intermediate layer formed on one surface thereof, and a dicing sheet of an adhesive layer formed on the intermediate layer, wherein the adhesive layer contains a molecule a compound containing an energy ray-curable double bond, wherein the storage modulus G' at 23 ° C before curing of the adhesive layer is larger than the storage modulus G' at 23 ° C of the intermediate layer, and the bonding is performed The dicing sheet before hardening of the agent layer is based on JIS Z0237:2000. When the 180° peeling adhesion test is performed on the 矽 mirror wafer, the measured adhesion force is 2000 mN/25 mm or more, and the above adhesive layer is hardened before The loss factor tan δ at 23 ° C is 0.23 or more.
(2)上述(1)中所記載的切割片,上述分子內具有能量線硬化性雙鍵的化合物,由聚合物的主鏈或側鏈上,含有結合能量線可聚合性基而成的能量線硬化型黏接性聚合物。 (2) The dicing sheet according to the above (1), wherein the compound having an energy ray-curable double bond in the molecule contains energy capable of binding an energy ray polymerizable group on a main chain or a side chain of the polymer. Wire hardening type adhesive polymer.
(3)上述(1)或(2)中所記載的切割片,上述中間層於23℃時的儲存模數G’係1×104Pa以上,未滿1×105Pa。 (3) The dicing sheet according to the above (1) or (2), wherein the intermediate layer has a storage modulus G' at 23 ° C of 1 × 10 4 Pa or more and less than 1 × 10 5 Pa.
(4)上述(1)至(3)任一項中所記載的切割片,其特徵為:上述黏接劑層硬化前於23℃時的儲存模數G’係3×105Pa以上。 (4) The dicing sheet according to any one of the above (1) to (3), wherein the storage modulus G' at 23 ° C before the curing of the adhesive layer is 3 × 10 5 Pa or more.
(5)上述(1)至(4)任一項中所記載的切割片,其特徵為:上述黏接劑層具有含反應性官能基的丙烯酸聚合物與交聯劑,對於丙烯酸聚合物100質量份,含有交聯劑5質量份以上。 (5) The dicing sheet according to any one of (1) to (4), wherein the adhesive layer has a reactive functional group-containing acrylic polymer and a crosslinking agent, and the acrylic polymer 100 The mass part contains 5 parts by mass or more of a crosslinking agent.
(6)上述(5)中所記載的切割片,其特徵為:上述交 聯劑係異氰酸酯類交聯劑。 (6) The dicing sheet according to (5) above, characterized in that: The crosslinking agent is an isocyanate crosslinking agent.
(7)上述(1)至(6)中任一項所記載的切割片,其特徵為:係用於黏貼於設有突起狀電極的晶圓。 (7) The dicing sheet according to any one of (1) to (6), wherein the dicing sheet is used for adhering to a wafer provided with a protruding electrode.
(8)上述(7)中所記載的切割片,其中上述突起狀電極為穿孔電極。 (8) The dicing sheet according to the above (7), wherein the protruding electrode is a perforated electrode.
(9)上述(7)或(8)中所記載的切割片,其特徵為:上述中間層的厚度係上述突起狀電極高度的0.5倍以上,1.5倍以下。 (9) The dicing sheet according to the above (7) or (8), wherein the thickness of the intermediate layer is 0.5 times or more and 1.5 times or less the height of the protruding electrode.
(10)上述(1)至(9)中任一項所記載的切割片,其中上述黏接劑層硬化前於23℃時的儲存模數G’,比上述中間層於23℃時的儲存模數G’的4倍還大。 (10) The dicing sheet according to any one of (1) to (9), wherein the storage modulus G' at 23 ° C before the curing of the adhesive layer is higher than the storage of the intermediate layer at 23 ° C The modulus G' is 4 times larger.
(11)上述(1)至(10)中任一項所記載的切割片,其中上述黏接劑層的厚度為5μm以上,50μm以下。 The dicing sheet according to any one of the above aspects, wherein the thickness of the adhesive layer is 5 μm or more and 50 μm or less.
(12)上述(1)至(11)中任一項所記載的切割片,其中上述中間層的厚度為5μm以上,50μm以下。 The dicing sheet according to any one of the above aspects, wherein the intermediate layer has a thickness of 5 μm or more and 50 μm or less.
(13)本發明所有關的半導體晶片的製造方法,包含在具有突起狀電極的半導體晶圓的電極形成面上,黏貼上述(1)至(12)中任一項所記載的切割片之製程、將上述半導體晶圓按每個電路切割成的多個半導體晶片的製造製程,與上述半導體晶片頂取的製程。 (13) A method of producing a semiconductor wafer according to the present invention, comprising the process of adhering the dicing sheet according to any one of (1) to (12) above, on an electrode forming surface of a semiconductor wafer having a protruding electrode And a manufacturing process of the plurality of semiconductor wafers in which the semiconductor wafers are cut for each circuit, and a process of drawing the semiconductor wafers.
本發明提供一種切割片與利用該切割片所進行的半導體晶片製造方法,其中該切割片黏貼於半導體晶圓後所獲得的積層體,即使於所設定的期間靜置,亦不容易發生如上述 之部分剝離。 The present invention provides a dicing sheet and a semiconductor wafer manufacturing method using the dicing sheet, wherein the laminated body obtained after the dicing sheet is adhered to the semiconductor wafer is less likely to occur even if it is allowed to stand for a set period of time Part of the stripping.
10、20‧‧‧切割片 10, 20‧‧‧ cutting pieces
1、21‧‧‧黏接劑層 1, 21‧‧‧ adhesive layer
2‧‧‧中間層 2‧‧‧Intermediate
3‧‧‧基材 3‧‧‧Substrate
30‧‧‧半導體晶圓 30‧‧‧Semiconductor Wafer
30A‧‧‧電極形成區域周緣 30A‧‧‧The periphery of the electrode formation area
30A’‧‧‧局部剝離產生的部分 30A’‧‧‧ Part of the partial peeling
31‧‧‧突起狀電極 31‧‧‧ protruding electrode
[圖1]本發明之其一實施形態所有關的切割片之簡略剖面圖。 Fig. 1 is a schematic cross-sectional view showing a dicing sheet according to an embodiment of the present invention.
[圖2]將專利3與4中所記載的切割片黏貼於半導體晶圓的狀態,以概念的形式呈現的剖面圖。 Fig. 2 is a cross-sectional view showing the state in which the dicing sheets described in Patent Nos. 3 and 4 are adhered to a semiconductor wafer in a conceptual form.
[圖3]將產生部分剝離的切割片以概念的形式呈現的剖面圖。 [Fig. 3] A cross-sectional view showing a partially peeled cut piece in a conceptual form.
以下說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described.
圖1係本發明之其一實施形態所有關的黏接片之簡略剖面圖,本發明之其一實施形態所有關的切割片10,具有基材3與其單面上形成的中間層2,以及中間層2上所形成的黏接劑層1。 1 is a schematic cross-sectional view of an adhesive sheet according to an embodiment of the present invention, and a dicing sheet 10 according to an embodiment of the present invention has a substrate 3 and an intermediate layer 2 formed on one surface thereof, and The adhesive layer 1 formed on the intermediate layer 2.
(黏接劑層1) (adhesive layer 1)
黏接劑層1硬化前(照射能量線前),在23℃時的儲存模數G’比中間層2在23℃時的儲存模數G’大,與此相同,由於具有以覆蓋低彈性模數的中間層2形式存在之彈性較高的黏接劑層1,便可適當地抑制黏接劑層1在突起狀電極之間追蹤,同時可防止於突起狀電極之間產生黏接劑層1的殘渣與頂取時晶片的受損。此外,黏接劑層1與中間層2的積層體中,由於黏接劑層1會增強中間層2的低彈性,比起只存在1層低彈性模數層的情況,可抑制切割時晶圓的震動,較不容易發生晶片崩裂。從能夠較穩定地得到上述效果之觀點來看,黏接劑層1硬 化前,在23℃時的儲存模數G’比中間層2在23℃時的儲存模數G’大4倍為佳,較佳係比中間層2在23℃時的儲存模數G’大5倍,更佳係比中間層2在23℃時的儲存模數G’大10倍,特佳係比中間層2在23℃時的儲存模數G’大20倍。 Before the adhesive layer 1 is hardened (before the irradiation energy line), the storage modulus G' at 23 ° C is larger than the storage modulus G' of the intermediate layer 2 at 23 ° C, and the same, due to the low elasticity of coverage The adhesive layer 1 having a higher elasticity in the form of the intermediate layer 2 of the modulus can appropriately suppress the tracking of the adhesive layer 1 between the protruding electrodes, and at the same time prevent the formation of an adhesive between the protruding electrodes. The residue of layer 1 and the damage of the wafer during the take-up. Further, in the laminated body of the adhesive layer 1 and the intermediate layer 2, since the adhesive layer 1 enhances the low elasticity of the intermediate layer 2, the cutting time can be suppressed compared to the case where only one low elastic modulus layer exists. The vibration of the circle is less prone to chip cracking. From the viewpoint of being able to obtain the above effects more stably, the adhesive layer 1 is hard Before storage, the storage modulus G' at 23 ° C is preferably 4 times larger than the storage modulus G' of the intermediate layer 2 at 23 ° C, preferably the storage modulus G' of the intermediate layer 2 at 23 ° C. It is 5 times larger, more preferably 10 times larger than the storage modulus G' of the intermediate layer 2 at 23 ° C, and the special layer is 20 times larger than the storage modulus G' of the intermediate layer 2 at 23 ° C.
黏接劑層1硬化前,於23℃時的儲存模數G’具體而言,較佳係3×105Pa以上,更佳係3.5×105Pa以上,1×107Pa以下。黏接劑層1硬化前,於23℃時的儲存模數G’若介於上述範圍內,便可使抑制黏接劑的突起狀電極之間的追蹤效果更為確實。 Before the curing of the adhesive layer 1, the storage modulus G' at 23 ° C is preferably 3 × 10 5 Pa or more, more preferably 3.5 × 10 5 Pa or more and 1 × 10 7 Pa or less. Before the adhesive layer 1 is cured, if the storage modulus G' at 23 ° C is within the above range, the tracking effect between the protruding electrodes for suppressing the adhesive can be made more reliable.
對於照射能量線前狀態的切割片,以JIS Z0237:2000為基準,對矽晶片進行180°撕除黏接力測試時所測得的黏接力(本發明專利說明書中亦稱為「照射前黏接力」)係2000mN/25mm以上。本發明專利說明書中,照射前測量黏接力為止的條件如下:切割片的黏接劑層1的面利用橡膠滾筒(Rubber roller)以荷重2kgf黏貼於矽鏡面晶圓上,在切割片黏貼於矽鏡面晶圓上的狀態下,於23℃、相對濕度50%的環境維持20分鐘,經過20分鐘後,以JIS Z0237:2000為基準,進行180°撕除黏接力測試。 For the dicing sheet in the state before the irradiation of the energy ray, the adhesion measured at the 180° tear-off adhesion test of the ruthenium wafer is based on JIS Z0237:2000 (also referred to as "pre-irradiation adhesion" in the patent specification of the present invention. ") is 2000mN / 25mm or more. In the patent specification of the present invention, the conditions for measuring the adhesive force before irradiation are as follows: the surface of the adhesive layer 1 of the dicing sheet is adhered to the enamel mirror wafer by a rubber roller with a load of 2 kgf, and the dicing sheet is adhered to the enamel. On the mirror wafer, the environment was maintained at 23 ° C and 50% relative humidity for 20 minutes. After 20 minutes, the 180 ° peel adhesion test was performed based on JIS Z0237:2000.
照射前黏接力係2000mN/25mm以上,可使部分剝離難以產生,從穩定地降低部分剝離產生的可能性之觀點來看,照射前黏接力係2200mN/25mm以上為佳,較佳係2300mN/25mm以上,更佳係2500mN/25mm以上。由減少部分剝離產生的可能性之觀點來看,不設定照射前黏接力的上限。從提高處理性與製造穩定性的觀點來看,照射前黏接力係 10000mN/25mm以下為佳,較佳係8000mN/25mm以下。 The adhesion force before irradiation is 2000 mN/25 mm or more, which makes partial peeling difficult to occur. From the viewpoint of stably reducing the possibility of partial peeling, the adhesive force before irradiation is preferably 2200 mN/25 mm or more, preferably 2300 mN/25 mm. More preferably, it is 2500 mN / 25 mm or more. From the viewpoint of reducing the possibility of partial peeling, the upper limit of the adhesive force before irradiation is not set. From the viewpoint of improving handling and manufacturing stability, the adhesion force before irradiation It is preferably 10000 mN/25 mm or less, preferably 8000 mN/25 mm or less.
黏接劑層1硬化前,於23℃中的損失因數tanδ係0.23以上,由於這種損失因數tanδ為0.23以上,使黏接劑層1的變形變得容易。因此更易於抑制序時性的黏接劑1之變形,部分剝離也變得困難。從更為穩定地減少部分剝離發生的可能性之觀點來看,上述損失因數tanδ係0.25以上為佳,較佳係0.3以上,更佳係0.38以上。從抑制部分剝離的發生之觀點來看,不設定上述損失因數tanδ的上限,從處理性與生產性的觀點來看,上述損失因數tanδ係0.7以下為佳,更佳係0.65以下。 Before the adhesive layer 1 is cured, the loss factor tan δ at 23 ° C is 0.23 or more, and since the loss factor tan δ is 0.23 or more, the deformation of the adhesive layer 1 is facilitated. Therefore, it is easier to suppress the deformation of the orthodontic adhesive 1, and partial peeling becomes difficult. From the viewpoint of more stably reducing the possibility of occurrence of partial peeling, the loss factor tan δ is preferably 0.25 or more, more preferably 0.3 or more, and still more preferably 0.38 or more. From the viewpoint of suppressing the occurrence of partial peeling, the upper limit of the above-described loss factor tan δ is not set, and from the viewpoint of handleability and productivity, the loss factor tan δ is preferably 0.7 or less, more preferably 0.65 or less.
黏接劑層1的厚度係5μm以上、50μm以下為佳。若黏接劑層1的厚度介於上述範圍內,切割性提高並抑制晶片崩裂的發生,此外,還可適當地抑制黏接劑層1於突起狀電極之間的追蹤,防止突起狀電極之間的黏接劑層1之殘渣發生,或頂取時晶片的損壞。另外,還可維持後面將敘述的突起狀電極形成的區域(電極形成區域)周緣的切割片追蹤性。黏接劑層1的厚度係5μm以上、40μm以下較佳,5μm以上、30μm以下則更佳。 The thickness of the adhesive layer 1 is preferably 5 μm or more and 50 μm or less. If the thickness of the adhesive layer 1 is within the above range, the cutting property is improved and the occurrence of chip cracking is suppressed. Further, the tracking of the adhesive layer 1 between the protruding electrodes can be appropriately suppressed, and the protruding electrode can be prevented. The residue of the adhesive layer 1 occurs, or the wafer is damaged during the ejection. Further, it is also possible to maintain the dicing traceability of the periphery of the region (electrode formation region) where the protruding electrodes described later will be formed. The thickness of the adhesive layer 1 is preferably 5 μm or more and 40 μm or less, and more preferably 5 μm or more and 30 μm or less.
黏接劑層1含有分子內具有能量線硬化性雙鍵的化合物,以及以用於發揮黏接性的物質形成之成分(以下亦稱為「能量線硬化型黏接成分」)。 The adhesive layer 1 contains a compound having an energy ray-curable double bond in the molecule and a component formed of a substance for exhibiting adhesion (hereinafter also referred to as "energy ray-curable bonding component").
黏接劑層1係利用能量線硬化型黏接成分,以及根據所需配合光聚合起始劑的黏接劑組成物所形成。此外,上述黏接劑組成物中,為了改良各種性質,亦可視所需包含除上述以外的其他成分,就其他成分而言,交聯劑為佳。 The adhesive layer 1 is formed by an energy ray-curable bonding component and an adhesive composition which is blended with a photopolymerization initiator as required. Further, in the above-mentioned adhesive composition, in order to improve various properties, other components than the above may be contained as needed, and a crosslinking agent is preferable for other components.
以下對於能量線硬化型黏接成分,舉丙烯酸類黏接劑為例具體說明。 Hereinafter, the energy ray-curable adhesive component will be specifically described by taking an acrylic adhesive as an example.
丙烯酸類黏接劑為了賦予黏接劑組成物充分的黏接性與造膜性(片形成性),含有丙烯酸聚合物(A)與能量線硬化性化合物(B),能量線硬化性化合物(B)包含能量線可聚合性基,若接受紫外線、電子束等能量線的照射便會聚合硬化,具有使黏接劑組成物的黏接力低下的功能。此外,利用兼具上述成分(A)與(B)的性質,於主鏈或側鏈上結合能量線可聚合性基結合而形成的能量線硬化型黏接性聚合物(以下亦稱為成分「(AB)」)為佳。這種能量線硬化型黏接性聚合物(AB)兼具黏接性與能量線硬化性的性質。 The acrylic adhesive contains an acrylic polymer (A), an energy ray-curable compound (B), and an energy ray-curable compound in order to impart sufficient adhesiveness and film forming property (sheet formation property) to the adhesive composition. B) The energy ray polymerizable group is contained, and when it is irradiated with an energy ray such as an ultraviolet ray or an electron beam, it is polymerized and hardened, and has a function of lowering the adhesion of the adhesive composition. Further, an energy ray-curable adhesive polymer (hereinafter also referred to as a component) formed by combining energy-polymerizable groups in a main chain or a side chain by utilizing the properties of the above components (A) and (B) "(AB)") is better. The energy ray-curable adhesive polymer (AB) has both adhesive properties and energy ray hardenability.
就丙烯酸聚合物(A)而言,可利用固有眾所皆知的丙烯酸聚合物。丙烯酸聚合物(A)的聚苯乙烯換算重量平均分子量(Mw)係1萬~200萬較佳,10萬~150萬則更佳。此外,丙烯酸聚合物(A)的玻璃轉換溫度(Tg)較佳係介於-70~30℃,更佳係介於-60~20℃範圍之內。 As the acrylic polymer (A), a well-known acrylic polymer can be utilized. The polystyrene-equivalent weight average molecular weight (Mw) of the acrylic polymer (A) is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. Further, the glass transition temperature (Tg) of the acrylic polymer (A) is preferably from -70 to 30 ° C, more preferably from -60 to 20 ° C.
就構成丙烯酸聚合物(A)的單體而言,可舉例(甲基)丙烯酸酯單體或其衍生物,具體的例子有(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、2-乙基己基(甲基)丙烯酸酯等烷基碳數介於1~18內的烷基(甲基)丙烯酸酯;三環烷基(甲基)丙烯酸、二苯乙二酮(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯、二環戊基(甲基)丙烯酸酯、二環戊烯基(甲基)丙烯酸、二環戊烯氧基(甲基)丙烯酸、醯亞胺(甲基)丙烯酸酯等具有環狀結構的(甲基)丙烯酸酯;羥甲基(甲基)丙烯酸甲 酯、(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯等含有羥基的(甲基)丙烯酸酯;丙烯酸、甲基丙烯酸、亞甲基丁二酸、縮水甘油丙烯酸酯、甲基丙烯酸環氧丙酯等。此外,亦可共聚乙酸乙烯酯、丙烯腈、苯乙烯等。上述成分可單獨使用1種,亦可2種以上並用,此外,本發明專利說明書中的「(甲基)丙烯酸」意指丙烯酸與甲基丙烯酸全部,對於其他類似用語亦同。 As the monomer constituting the acrylic polymer (A), a (meth) acrylate monomer or a derivative thereof can be exemplified, and specific examples thereof are methyl (meth) acrylate and ethyl (meth) acrylate, ( An alkyl (meth) acrylate having an alkyl carbon number of from 1 to 18, such as propyl methacrylate, butyl (meth) acrylate or 2-ethylhexyl (meth) acrylate; tricycloalkane (meth)acrylic acid, diphenylethylenedione (meth) acrylate, isodecyl (meth) acrylate, dicyclopentyl (meth) acrylate, dicyclopentenyl (meth) acrylate (meth) acrylate having a cyclic structure such as dicyclopentenyloxy (meth)acrylic acid or quinone imine (meth) acrylate; hydroxymethyl (meth) acrylate a hydroxyl group-containing (meth) acrylate such as ester, 2-hydroxyethyl (meth)acrylate or 2-hydroxypropyl (meth)acrylate; acrylic acid, methacrylic acid, methylene succinic acid, glycidol acrylic acid Ester, glycidyl methacrylate, and the like. Further, vinyl acetate, acrylonitrile, styrene or the like may be copolymerized. The above-mentioned components may be used singly or in combination of two or more. In addition, "(meth)acrylic acid" in the specification of the present invention means all of acrylic acid and methacrylic acid, and the same applies to other similar terms.
另外,本發明的丙烯酸聚合物(A)具有反應性官能基為佳,反應性官能基與構成本發明的黏接劑層1的黏接劑組成物中,添加的交聯劑反應性官能基反應後,形成立體網狀結構,使黏接劑層1在23℃環境之下,更易於將儲存模數G’調整為所設定的範圍。就丙烯酸聚合物(A)的反應性官能基而言,雖可列舉羧基、胺基、環氧基、羥基等,但就較容易與交聯劑反應的觀點來看,選擇羥基為佳。反應性官能基利用上述含羥基(甲基)丙烯酸酯或丙烯酸等具有反應性官能基的單體構成丙烯酸聚合物(A),便可導入丙烯酸聚合物(A)中。 Further, the acrylic polymer (A) of the present invention preferably has a reactive functional group, and the reactive functional group and the binder composition constituting the adhesive layer 1 of the present invention are added with a crosslinking functional group reactive functional group. After the reaction, a three-dimensional network structure is formed, and the adhesive layer 1 is more easily adjusted to a set range under the environment of 23 ° C. The reactive functional group of the acrylic polymer (A) may, for example, be a carboxyl group, an amine group, an epoxy group or a hydroxyl group. However, from the viewpoint of easily reacting with the crosslinking agent, it is preferred to select a hydroxyl group. The reactive functional group can be incorporated into the acrylic polymer (A) by constituting the acrylic polymer (A) with a monomer having a reactive functional group such as a hydroxyl group-containing (meth) acrylate or acrylic acid.
構成丙烯酸聚合物(A)的全部單體中,包含具有反應性官能基的單體5~30質量%較佳,包含10~30質量%則更佳。具有反應性官能基的單體的組合比例若介於此範圍,透過交聯劑,丙烯酸聚合物(A)便可有效率地交聯,黏接劑層1於23℃時,更容易將儲存模數G’調整為所設定的範圍。此外,丙烯酸聚合物(A)的反應性官能基(例如:羥基)當量,係交聯劑的反應性官能基(例如:異氰酸酯基)當量的0.17~2.0倍為佳,丙烯酸聚合物(A)的反應性官能基當量與交聯劑的反應性官能基當量的關係,按上述範圍實行,黏接劑層1於23℃時,便更 容易將儲存模數G’調整為所設定的範圍。 The monomer constituting the acrylic polymer (A) preferably contains 5 to 30% by mass of the monomer having a reactive functional group, and more preferably 10 to 30% by mass. If the combination ratio of the monomer having a reactive functional group is in this range, the acrylic polymer (A) can be efficiently crosslinked by the crosslinking agent, and the adhesive layer 1 can be more easily stored at 23 ° C. The modulus G' is adjusted to the set range. Further, the reactive functional group (for example, hydroxyl group) equivalent of the acrylic polymer (A) is preferably 0.17 to 2.0 times the equivalent of the reactive functional group (for example, isocyanate group) of the crosslinking agent, and the acrylic polymer (A) The relationship between the reactive functional group equivalent and the reactive functional group equivalent of the crosslinking agent is carried out in the above range, and the adhesive layer 1 is further improved at 23 ° C. It is easy to adjust the storage modulus G' to the set range.
能量線硬化性化合物(B)係接受紫外線、電子束等能量線照射之下硬化而成的化合物,此能量線硬化性化合物可舉例具有能量線聚合性基的低分子量化合物(單官能、多官能的單體與寡聚合物),具體例子有三羥甲基丙烷三丙烯酸酯、四丙烯酸四、季戊四醇三丙烯酸酯、二季戊四醇單羥基五、二季戊四醇六丙烯酸、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯等的丙烯酸酯;二環戊二烯二丙烯酸酯二甲、丙烯酸異冰片酯等含有環狀脂肪胺結構的的丙烯酸酯;聚乙二醇二丙烯酸酯、低聚酯丙烯酸酯、聚氨酯丙烯酸酯低聚物、環氧改質的丙烯酸酯、聚醚丙烯酸酯、衣康酸低聚物等的丙烯酸酯類化合物。此種化合物分子內具有能量線硬化性雙鍵,通常分子量係100~30000、較佳係300~10000左右。 The energy ray-curable compound (B) is a compound which is cured by irradiation with an energy ray such as an ultraviolet ray or an electron beam. The energy ray-curable compound can be exemplified by a low molecular weight compound having an energy ray polymerizable group (monofunctional, polyfunctional). Monomers and oligopolymers, specific examples are trimethylolpropane triacrylate, tetrakis tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxy penta, dipentaerythritol hexaacrylic acid, 1,4-butanediol diacrylate Acrylate such as 1,6-hexanediol diacrylate; acrylate containing a cyclic fatty amine structure such as dicyclopentadiene diacrylate dimethyl or isobornyl acrylate; polyethylene glycol diacrylate An acrylate compound such as a low-polyester acrylate, a urethane acrylate oligomer, an epoxy-modified acrylate, a polyether acrylate, or an itaconic acid oligomer. Such a compound has an energy ray-curable double bond in the molecule, and usually has a molecular weight of 100 to 30,000, preferably about 300 to 10,000.
一般而言,在成分(A)(包含後面將敘述的能量線硬化型黏接性聚合物(AB))係100質量份的情況下,具有能量線可聚合性基的低分子量化合物的比例係0~200質量份較佳,更佳係1~100質量份,特佳係1~30質量份左右。具有能量線可聚合性基的低分子量化合物,藉由其低分子量,添加后可軟化能量線硬化前的黏接劑層1。如此一來,黏接劑層1於突起狀電極之間追蹤變得容易,會導致突起狀電極之間容易產生黏接劑殘渣的問題,因此,具有能量線可聚合性基的低分子量化合物之使用量,最好限制於少量為佳。 In general, when the component (A) (including the energy ray-curable adhesive polymer (AB) described later) is 100 parts by mass, the ratio of the low molecular weight compound having an energy ray polymerizable group is 0 to 200 parts by mass is more preferable, more preferably 1 to 100 parts by mass, and particularly preferably 1 to 30 parts by mass. The low molecular weight compound having an energy ray polymerizable group, by which it has a low molecular weight, softens the adhesive layer 1 before the energy ray hardening. As a result, the adhesive layer 1 is easily traced between the protruding electrodes, which causes a problem that the adhesive residue is likely to be generated between the protruding electrodes, and therefore, a low molecular weight compound having an energy ray polymerizable group is used. The amount of use is preferably limited to a small amount.
能量線硬化型黏接性聚合物(AB)兼具上述成分(A)與(B)的性質,係於聚合物的主鏈或側鏈上結合能量線可聚合 性基而形成,如上所述,雖然將具有能量線可聚合性基的低分子量化合物的使用量限制為少量較佳,這種情況下,藉由能量線的照射之黏接劑層1的硬化有可能會變得不充分,抑制於黏附體上殘留黏接劑層1的效果變得不彰,因此,透過將能量線硬化型黏接性聚合物(AB)用於黏接劑層1中,使能量線照射前的黏接劑層1不會軟化,且可由能量線的照射充分地硬化黏接劑層1。此外,能量線硬化型黏接性聚合物(AB)由於分子內具有能量線可聚合性基,亦可具有反應性官能基,因此其中的某一分子與另一分子結合的機率很高,因此,照射能量線使黏接劑層1硬化後,低分子成分不放入立體網狀結構而殘存的可能性很低。因此,可抑制因為沒有放入立體網狀結構而殘存的低分子成分所造成的殘渣產生。 The energy ray-curable adhesive polymer (AB) has the properties of the above components (A) and (B), and is bonded to the energy-chain polymerizable on the main chain or the side chain of the polymer. Formed as a base, as described above, it is preferable to limit the amount of use of the low molecular weight compound having an energy ray polymerizable group to a small amount, in which case the hardening of the adhesive layer 1 by irradiation of the energy ray is performed. There is a possibility that the effect of the residual adhesive layer 1 on the adhesive body is not sufficient, and therefore, the energy ray-curable adhesive polymer (AB) is used for the adhesive layer 1 The adhesive layer 1 before the irradiation of the energy ray is not softened, and the adhesive layer 1 can be sufficiently hardened by the irradiation of the energy ray. In addition, since the energy ray-curable adhesive polymer (AB) has an energy ray polymerizable group in the molecule and may have a reactive functional group, the probability that one of the molecules binds to another molecule is high. After the energy beam is irradiated to cure the adhesive layer 1, the possibility that the low molecular component does not remain in the three-dimensional network structure remains low. Therefore, it is possible to suppress the generation of residue due to the low molecular component remaining without the three-dimensional network structure.
能量線硬化型黏接性聚合物的主結構並無特別限制,係作為黏接劑廣泛使用的丙烯酸共聚物亦佳。 The main structure of the energy ray-curable adhesive polymer is not particularly limited, and is preferably an acrylic copolymer which is widely used as an adhesive.
於能量線硬化黏接性聚合物的主鏈或側鏈上結合的能量線可聚合性基,例如包含能量線硬化性的碳-碳雙鍵的基,具體可舉例(甲基)丙烯醯基等。能量線可聚合性基亦可透過亞烷基、氧化烯基、聚氧化烯基結合能量線硬化型黏接性聚合物。 An energy ray polymerizable group bonded to a main chain or a side chain of an energy ray-curable adhesive polymer, for example, a group containing an energy ray-curable carbon-carbon double bond, and specifically (meth) acrylonitrile group Wait. The energy ray polymerizable group may also be bonded to the energy ray-curable adhesive polymer through an alkylene group, an oxyalkylene group or a polyoxyalkylene group.
能量線可聚合性基結合的能量線硬化型黏接性聚合物(AB)的重量平均分子量(Mw)係1萬~200萬較佳,10萬~150萬則更佳。此外,能量線硬化型黏接性聚合物(AB)的玻璃轉換溫度(Tg)較佳係介於-70~30℃,更佳係介於-60~20℃之範圍。 The energy ray-curable adhesive polymer (AB) to which the energy ray polymerizable group is bonded has a weight average molecular weight (Mw) of preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. Further, the glass transition temperature (Tg) of the energy ray-curable adhesive polymer (AB) is preferably from -70 to 30 ° C, more preferably from -60 to 20 ° C.
能量線硬化型黏接性聚合物(AB),例如含有羥基、 羧基、胺基、取代胺基、環氧基等官能基的丙烯酸黏接性聚合物,以及和該官能基反應的取代基,與每1分子具有1~5能量線聚合性碳-碳雙鍵之含可聚合性基化合物反應之後而獲得。丙烯酸黏接性聚合物係由羥基、羧基、胺基、取代胺基、環氧基等具有官能基的(甲基)丙烯酸酯單體,或以其衍生物與構成前面敘述的成分(A)的單體形成的共聚物為佳。就該含可聚合性基化合物而言,可舉例(甲基)丙烯酰氧乙基異氰酸酯、甲基-異丙基-α,α-二甲基芐基異氰酸酯、(甲基)丙烯酰異氰酸酯、烯丙基異氰酸酯、縮水甘油基(甲基)丙烯酸酯;(甲基)丙烯酸等。 An energy ray-curable adhesive polymer (AB), for example, containing a hydroxyl group, An acrylic acid-bonding polymer having a functional group such as a carboxyl group, an amine group, a substituted amino group or an epoxy group, and a substituent reactive with the functional group, and having 1 to 5 energy-line polymerizable carbon-carbon double bonds per molecule It is obtained after the reaction of the polymerizable group-containing compound. The acrylic adhesive polymer is a (meth) acrylate monomer having a functional group such as a hydroxyl group, a carboxyl group, an amine group, a substituted amine group or an epoxy group, or a derivative thereof and a component (A) constituting the aforementioned. The copolymer formed by the monomer is preferred. The polymerizable group-containing compound may, for example, be (meth)acryloyloxyethyl isocyanate, methyl-isopropyl-α,α-dimethylbenzyl isocyanate or (meth)acryloyl isocyanate. Allyl isocyanate, glycidyl (meth) acrylate, (meth) acrylic acid, and the like.
如上所述,包含丙烯酸聚合物(A)與能量線硬化性化合物(B),或能量線硬化型黏接性聚合物(AB)的丙烯酸類黏接劑,透過能量線照射而硬化。就能量線而言,具體可舉例紫外線、電子束等。 As described above, the acrylic adhesive containing the acrylic polymer (A), the energy ray-curable compound (B), or the energy ray-curable adhesive polymer (AB) is cured by energy ray irradiation. As the energy line, specifically, an ultraviolet ray, an electron beam, or the like can be exemplified.
就光聚合起始劑而言,可列舉安息香化合物、甲基苯丙酮化合物、酰基膦氧化合物、二氯二茂鈦化合物、噻吨酮化合物、過氧化合物等的光起始劑、胺與醌等的光敏感劑等,具體可舉例1-羥基環己基苯基甲酮、安息香、安息香二甲醚、安息香乙醚、安息香異丙醚、二苯乙二酮基硫醚、四甲胺硫甲醯、偶氮雙異丁腈、聯苄、聯乙醯、β-蒽醌、2,4,6-三甲基苯甲酰二苯基氧化膦等。就能量線而言,使用紫外線的情況下,藉由搭配光起始劑,可減少照射時間與照射量。 Examples of the photopolymerization initiator include a photoinitiator such as a benzoin compound, a methylphenylketone compound, an acylphosphine oxide compound, a dichlorotitanocene compound, a thioxanthone compound, a peroxy compound, and the like, and an amine and an anthracene. Such as photo-sensitive agents, etc., specifically 1-hydroxycyclohexyl phenyl ketone, benzoin, benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, diphenylethylenedione thioether, tetramethylamine thioformamidine , azobisisobutyronitrile, bibenzyl, hydrazine, β-fluorene, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and the like. In the case of the energy ray, when the ultraviolet ray is used, the irradiation time and the irradiation amount can be reduced by using the photoinitiator.
光聚合起始劑的含量雖然理論上係由存在於黏接劑層1的不飽和鍵量(能量線硬化性雙鍵量),或其反應性與使用的光聚合起始劑之反應來決定,但在複雜的混和物類中是非 常難由此做決定的,就一般的標準而言,光聚合起始劑的含量在能量線硬化性化合物(B)係100質量份時,較佳係0.1~10質量份,更佳係1~5質量份。若光聚合起始劑的含量未達上述範圍,則會因光聚合之不足,導致無法獲得滿意的頂取性;若超過上述範圍,則會產生無法對光聚合貢獻的殘留物,使黏接劑層1的硬化性變得不夠充分。 The content of the photopolymerization initiator is theoretically determined by the amount of unsaturated bonds present in the binder layer 1 (the amount of energy-line-hardening double bonds), or the reactivity thereof and the photopolymerization initiator used. But in the complex mixture class It is often difficult to determine this. In general, the content of the photopolymerization initiator is preferably 0.1 to 10 parts by mass, more preferably 1 to 10 parts by mass, based on 100 parts by mass of the energy ray-curable compound (B). ~5 parts by mass. When the content of the photopolymerization initiator is less than the above range, satisfactory elution cannot be obtained due to insufficient photopolymerization; if it exceeds the above range, residues which cannot contribute to photopolymerization are generated, and adhesion is caused. The hardenability of the agent layer 1 becomes insufficient.
就交聯劑而言,可舉例有機多元異氰酸酯化合物、有機多元環氧化合物、有機多元胺化合物等,其中以有機多元異氰酸酯化合物(異氰酸酯類交聯劑)為佳。 The crosslinking agent may, for example, be an organic polyvalent isocyanate compound, an organic polyvalent epoxy compound, an organic polyamine compound or the like, and among them, an organic polyvalent isocyanate compound (isocyanate crosslinking agent) is preferred.
就有機多元異氰酸酯化合物而言,可舉例芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物、脂環族多元異氰酸酯化合物,和這些有機聚異氰酸酯化合物三聚體,以及所述有機多元異氰酸酯化合物與多元醇化合物反應得到的末端異氰酸酯聚氨酯預聚物等。 In the case of the organic polyvalent isocyanate compound, an aromatic polyisocyanate compound, an aliphatic polyisocyanate compound, an alicyclic polyisocyanate compound, and a trimer of these organic polyisocyanate compounds, and the organic polyisocyanate compound and the polyol compound can be exemplified. The terminal isocyanate polyurethane prepolymer obtained by the reaction, and the like.
有機多元異氰酸酯化合物的具體例子有:2,4-甲苯異氰酸酯、2,6-甲苯異氰酸酯、1,3-苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4、4’-二異氰酸酯、二苯基甲烷-2、4'-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二環己基甲烷-4、4'-二異氰酸酯、二環己基-2、4'-二異氰酸酯、甲苯二異氰酸酯三羥甲基丙烷加合物與賴氨酸二異氰酸酯等。 Specific examples of the organic polyisocyanate compound are: 2,4-toluene isocyanate, 2,6-toluene isocyanate, 1,3-benzenediisocyanate, 1,4-dimethylbenzene diisocyanate, diphenylmethane-4, 4'- Diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4, 4' - Diisocyanate, dicyclohexyl-2, 4'-diisocyanate, toluene diisocyanate trimethylolpropane adduct and lysine diisocyanate.
有機多元環氧化合物的具體例子有:1,3-二(N,N'-二縮水甘油基氨基甲基)環己烷、N,N,N',N'-四縮水甘油基-間苯二甲胺、乙二醇二縮水甘油醚、1,6-己二醇二縮水甘油醚、 三羥甲基丙烷二縮水甘油醚、二縮水甘油基苯胺、二縮水甘油基胺等。 Specific examples of the organic polyvalent epoxy compound are: 1,3-bis(N,N'-diglycidylaminomethyl)cyclohexane, N,N,N',N'-tetraglycidyl-m-phenylene Dimethylamine, ethylene glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, Trimethylolpropane diglycidyl ether, diglycidyl aniline, diglycidylamine, and the like.
有機多元胺化合物的具體例子有:N,N'-二苯基甲烷-4、4'-雙(1-氮丙啶甲酰胺)、羥甲丙烷-三-β-氮雜環丙基丙酸、四羥甲基甲烷-三-β-氮雜環丙基丙酸,與N,N'-甲苯-2、4-雙(1-氮丙啶酰胺基)三乙撑三聚氰酰胺等。 Specific examples of the organic polyamine compound are: N,N'-diphenylmethane-4, 4'-bis(1-aziridinecarboxamide), hydroxymethylpropane-tri-beta-azacyclopropylpropionic acid And tetramethylolethane-tris-β-azacyclopropylpropionic acid, and N,N'-toluene-2,4-bis(1-aziridineacyl)triethylene melamine.
交聯劑在丙烯酸聚合物(A)(包含能量線硬化型黏接性聚合物(AB))係100質量份時,含有比例係5質量份以上較佳,更佳係8~35質量份,特佳係12~30質量份。交聯劑的混和量照上述範圍搭配,黏接劑層1於23℃時的儲存模數G’將更容易調整至理想的範圍。 When the crosslinking agent is 100 parts by mass of the acrylic polymer (A) (including the energy ray-curable adhesive polymer (AB)), the ratio is preferably 5 parts by mass or more, more preferably 8 to 35 parts by mass. Specially good 12 to 30 parts by mass. The mixing amount of the crosslinking agent is matched in the above range, and the storage modulus G' of the adhesive layer 1 at 23 ° C is more easily adjusted to a desired range.
此外,就其他成分而言,除了交聯劑以外,亦可添加染料、顏料、劣化防止劑、靜電防止劑、阻燃劑、聚矽氧化合物、鏈轉移劑等。 Further, as the other components, in addition to the crosslinking agent, a dye, a pigment, a deterioration preventing agent, an antistatic agent, a flame retardant, a polyoxymethylene compound, a chain transfer agent, or the like may be added.
黏接劑層1具有內含分支結構的聚合物即聚合性分支聚合物亦佳,聚合性分支聚合物具有提升切割片的剝離性(頂取性)之功能,對於聚合性分支聚合物的聚體構造(具體可舉例分子量、分支結構的程度、單個分子中所含有的能量線硬化性雙鍵數等。)並無限制,就獲得這種聚合性分支聚合物的方法而言,例如分子內具有2個以上能量線硬化性雙鍵的單體與分子內具有活性氫基以及1個能量線硬化性雙鍵的單體,與分子內具有1個能量線硬化性雙鍵的單體聚合,所得到的具分支結構的聚合物和活性氫基反應後,將可形成結合的官能基,以及分子內至少具有1個能量線硬化性雙鍵的化合物反應而得到。 It is also preferable that the adhesive layer 1 has a polymer having a branched structure, that is, a polymerizable branched polymer, and the polymerizable branched polymer has a function of improving the peeling property (capability) of the dicing sheet, and is agglomerated for the polymerized branched polymer. The bulk structure (specifically, the molecular weight, the degree of branching structure, the number of energy-line hardening double bonds contained in a single molecule, etc.) is not limited, and a method for obtaining such a polymerizable branched polymer, for example, intramolecular A monomer having two or more energy ray-curable double bonds and a monomer having an active hydrogen group and one energy ray-curable double bond in the molecule are polymerized with a monomer having one energy ray-curable double bond in the molecule. The obtained branched polymer and the active hydrogen group are reacted, and a functional group capable of forming a bond and a compound having at least one energy ray-curable double bond in the molecule are reacted.
從可適當地抑制和丙烯酸聚合物(A)(包含能量線硬化型黏接性聚合物(AB))的交互作用的觀點來看,聚合性分支聚合物的聚苯乙烯換算重量平均分子量(Mw)係1,000以上、100,000以下較佳,3,000以上、30,000以下更佳。聚合性分支聚合物中,單個分子中所具有的能量線可聚合性基數並無限制。 The polystyrene-equivalent weight average molecular weight (Mw) of the polymerizable branched polymer from the viewpoint of appropriately suppressing the interaction with the acrylic polymer (A) (including the energy ray-curable adhesive polymer (AB)) It is preferably 1,000 or more and 100,000 or less, more preferably 3,000 or more and 30,000 or less. In the polymerizable branched polymer, the number of energy ray polymerizable groups in a single molecule is not limited.
此外,本發明專利說明書中,所謂的聚苯乙烯換算重量平均分子量(Mw)數值,係指將四氫呋喃(THF)作為溶劑,透過凝膠滲透層析術(GPC),以聚苯乙烯換算值測量的數值。具體而言,使用GPC測量儀器(TOSOH CORPORATION製,「HLC-8220GPC」),根據下列條件實施。 Further, in the patent specification of the present invention, the so-called polystyrene-equivalent weight average molecular weight (Mw) value means that tetrahydrofuran (THF) is used as a solvent, and is subjected to gel permeation chromatography (GPC) and measured in terms of polystyrene. The value. Specifically, a GPC measuring instrument ("HLC-8220GPC" manufactured by TOSOH CORPORATION) was used, and it was carried out according to the following conditions.
分析柱(Column):TSKgelGMHXL→TSKgelGMHXL→TSKgel2000HXL Column: TSKgelGMHXL→TSKgelGMHXL→TSKgel2000HXL
測量溫度:40℃ Measuring temperature: 40 ° C
流速:1ml/分 Flow rate: 1ml/min
偵檢器:微差折射器 Detector: differential refractor
(中間層2) (middle layer 2)
中間層2,例如可透過以往所揭示的各種黏接劑等的樹脂組成物。就這種黏接劑來說,雖然沒有任何限制,例如可利用橡膠類、丙烯酸類、胺甲酸乙酯類、聚矽氧類、聚乙烯醚等黏接劑。此外,亦可利用能量線硬化型或加熱發泡型、水膨脹型的黏接劑。就能量線硬化(紫外線硬化、電子束硬化等)型黏接劑而言,利用紫外線硬化型黏接劑尤佳。 The intermediate layer 2 can be, for example, a resin composition such as various adhesives disclosed in the related art. In the case of such an adhesive, although there is no limitation, for example, an adhesive such as rubber, acrylic, urethane, polyfluorene or polyvinyl ether can be used. Further, an energy ray hardening type or a heat foaming type or water expansion type adhesive may be used. For the energy line hardening (ultraviolet curing, electron beam hardening, etc.) type of adhesive, it is particularly preferable to use an ultraviolet curing type adhesive.
構成中間層2的材料係丙烯酸類材料的情況下,亦可利用與舉例為用於構成黏接劑層1的材料之丙烯酸類黏接劑相同的材料,若構成黏接劑層1的丙烯酸類黏接劑含有的成 分中含有丙烯酸聚合物(A),則能量線中亦可不含硬化性質。 In the case where the material constituting the intermediate layer 2 is an acrylic material, the same material as the acrylic adhesive exemplified as the material for constituting the adhesive layer 1 may be used, and the acrylic constituting the adhesive layer 1 may be used. Adhesive containing If the acrylic polymer (A) is contained in the fraction, the energy ray may not contain hardening properties.
若構成中間層2的材料係胺甲酸乙酯類材料,該材料係由專利文獻4中所記載的含胺甲酸乙酯硬化物所組成者亦佳。含胺甲酸乙酯硬化物係將胺甲酸乙酯寡聚合物與/或胺甲酸乙酯(甲基)丙烯酸酯寡聚合物,和包含根據所需而添加的能量線硬化型單體化合物行能量線硬化之硬化物亦佳。 When the material constituting the intermediate layer 2 is a urethane-based material, the material is preferably composed of the urethane-containing cured product described in Patent Document 4. The urethane-containing hardening system is an urethane oligo polymer and/or an urethane (meth) acrylate oligo polymer, and an energy ray-hardening monomer compound added as needed. Hardening of the wire hardening is also good.
中間層2在23℃時的儲存模數G’之具體數值,只要能夠滿足前述黏接劑層1在23℃時與儲存模數G’的關係,並無特別限制。中間層2在23℃時的儲存模數G’較佳係1×104Pa以上、未滿1×105Pa,更佳係1×104Pa以上、9×104Pa以下,特佳係1×104Pa以上、8×104Pa以下。藉由調整中間層2在23℃時的儲存模數G’介於此範圍,可更為確實地獲得提升電極形成區域周緣上切割片的追蹤性效果。若中間層2在23℃時的儲存模數G’過低,則黏接劑層1將於突起狀電極之間追蹤,突起狀電極之間產生黏接劑層1的殘渣之可能性便會提高。此外,中間層2具有藉由能量線照射而硬化的性質之情況下,中間層2在23℃時的儲存模數G’係能量線照射前的儲存模數。 The specific value of the storage modulus G' of the intermediate layer 2 at 23 ° C is not particularly limited as long as it satisfies the relationship between the adhesive layer 1 and the storage modulus G' at 23 ° C. The storage modulus G' of the intermediate layer 2 at 23 ° C is preferably 1 × 10 4 Pa or more, less than 1 × 10 5 Pa, more preferably 1 × 10 4 Pa or more, and 9 × 10 4 Pa or less. Department least 1 × 10 4 Pa, 8 × 10 4 Pa or less. By adjusting the storage modulus G' of the intermediate layer 2 at 23 ° C to be within this range, the traceability effect of the dicing sheet on the periphery of the lift electrode forming region can be more surely obtained. If the storage modulus G' of the intermediate layer 2 at 23 ° C is too low, the adhesive layer 1 will be traced between the protruding electrodes, and the possibility of causing the residue of the adhesive layer 1 between the protruding electrodes will be improve. Further, in the case where the intermediate layer 2 has a property of being hardened by irradiation with an energy ray, the storage modulus G' of the intermediate layer 2 at 23 ° C is the storage modulus before the irradiation of the energy ray.
此外,中間層2的厚度係5μm以上、50μm以下為佳,中間層2的厚度介於上述範圍的情況下,可使中間層2更容易依照著黏接劑層1變型而變型。中間層2較佳係10μm以上、40μm以下,更佳係15μm以上、35μm以下,特佳係20μm以上、30μm以下。 Further, the thickness of the intermediate layer 2 is preferably 5 μm or more and 50 μm or less, and when the thickness of the intermediate layer 2 is in the above range, the intermediate layer 2 can be more easily modified in accordance with the modification of the adhesive layer 1. The intermediate layer 2 is preferably 10 μm or more and 40 μm or less, more preferably 15 μm or more and 35 μm or less, and particularly preferably 20 μm or more and 30 μm or less.
中間層2的厚度係突起狀電極高度的0.5倍以上、1.5倍以下為佳,較佳係1.0倍以上、1.5倍以下。中間層2的 具體厚度於上述理想範圍選擇,自套用的晶圓之突起狀電極高度計算後決定為佳。藉由中間層2的厚度介於上述範圍內,突起狀電極之間的切割片非追蹤性,以及電極形成區域周緣中的切割片追蹤性十分優秀,可提升切割性,並抑制晶片崩裂的發生。 The thickness of the intermediate layer 2 is preferably 0.5 times or more and 1.5 times or less the height of the protruding electrodes, and is preferably 1.0 times or more and 1.5 times or less. Intermediate layer 2 The specific thickness is selected in the above-described ideal range, and it is preferably determined from the height of the protruding electrode of the wafer to be applied. By the thickness of the intermediate layer 2 being within the above range, the dicing sheet between the protruding electrodes is non-tracking, and the dicing sheet traceability in the periphery of the electrode forming region is excellent, the cutting property can be improved, and the occurrence of chip cracking can be suppressed. .
(基材3) (Substrate 3)
就基材3而言,雖然沒有特別限制,例如可利用低密度聚乙烯(LDPE)薄膜、線性低密度聚乙烯(LLDPE)薄膜、高密度聚乙烯(HDPE)薄膜等的聚乙烯薄膜;聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚(對酞酸乙二酯)薄膜、聚對苯二甲酸丁二醇酯薄膜、聚氨酯薄膜、聚醯亞胺薄膜、乙烯-醋酸乙烯酯共聚物組合物薄膜、離子鍵樹脂薄膜、乙烯.(甲基)丙烯酸共聚物薄膜、乙烯.(甲基)丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、氟樹脂薄膜與其氫化物或改質物等所組成的薄膜。此外,亦可利用上述的交聯薄膜、共聚物薄膜。上述的基材3可係1種單獨薄膜,亦可為2種以上組合的複合薄膜。 The substrate 3 is not particularly limited, and for example, a polyethylene film such as a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, a high density polyethylene (HDPE) film, or the like can be used; Film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, poly(ethylene terephthalate) film, polybutylene terephthalate Ester film, polyurethane film, polyimide film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene. (Meth)acrylic copolymer film, ethylene. A film composed of a (meth) acrylate copolymer film, a polystyrene film, a polycarbonate film, a fluororesin film, a hydride or a modified product thereof. Further, the above-mentioned crosslinked film or copolymer film can also be used. The base material 3 described above may be a single film or a composite film of two or more types.
此外,就用於硬化黏接劑層1與/或中間層2所照射的能量線而言,在利用紫外線的情況下,基材3係由對於紫外線具有穿透性的材料構成為佳。此外,就能量線而言,在利用電子束的情況下,對基材3不需具有光穿透性。在要求黏附體面具有可見性的情況下,基材3係透明狀態為佳,另外,基材3亦可染色。 Further, in the case of the energy rays used for curing the adhesive layer 1 and/or the intermediate layer 2, in the case of using ultraviolet rays, the substrate 3 is preferably made of a material having transparency to ultraviolet rays. Further, in the case of the energy ray, in the case of using an electron beam, it is not necessary to have light permeability to the substrate 3. In the case where the adhesion surface is required to have visibility, the substrate 3 is preferably in a transparent state, and the substrate 3 may be dyed.
此外,基材3的上面,即中間層2形成側的基材3 之表面上,為了提高與中間層2的黏合性,可實施電暈處理或形成底漆層。另外,中間層2的反面亦可進行各種塗膜工藝,本發明之其一實施形態所有關的切割片,透過如上所述於基材3的單面上形成中間層2,該中間層2上形成黏接劑層1製造而成。基材3的厚度介於20~200μm為佳,較佳係25~110μm,更佳係50~90μm之範圍。若基材3的厚度大,基材3的抗彎強度會變大,頂取時的晶片與切割片之剝離角度將難以變大,因此,可能會導致頂取時所需力量增加,頂取性下降的情況。基材3的厚度小的情況下,可能會因為材料的緣故而導致製膜變得困難。 Further, the upper surface of the substrate 3, that is, the intermediate layer 2 is formed on the side of the substrate 3 On the surface, in order to improve the adhesion to the intermediate layer 2, corona treatment or formation of a primer layer may be performed. Further, the reverse side of the intermediate layer 2 may be subjected to various coating processes, and the dicing sheet according to an embodiment of the present invention is formed by forming the intermediate layer 2 on one side of the substrate 3 as described above, on the intermediate layer 2 The adhesive layer 1 is formed. The thickness of the substrate 3 is preferably from 20 to 200 μm, more preferably from 25 to 110 μm, still more preferably from 50 to 90 μm. If the thickness of the substrate 3 is large, the bending strength of the substrate 3 will become large, and the peeling angle between the wafer and the dicing sheet at the time of the topping will be difficult to be increased, and thus the force required for the plucking may be increased, and the drawing may be performed. Sexual decline. When the thickness of the substrate 3 is small, film formation may become difficult due to the material.
上述於基材3的表面形成中間層2的方法,塗佈構成中間層2的中間層用組成物,使其於剝離片上達成所設定的膜厚以形成中間層2,可於上述基材3的表面上轉寫亦無妨,在上述基材3的表面上,直接塗佈中間層用組成物以形成中間層2亦可。於中間層2上形成黏接劑層1的方法,可利用在黏接劑組成物基材3上形成中間層2的方法一樣的方法進行,如上所述實施後,便可獲得本發明之其一實施形態所有關的切割片。 The method of forming the intermediate layer 2 on the surface of the substrate 3, applying the composition for the intermediate layer constituting the intermediate layer 2, and forming the intermediate layer 2 on the release sheet to form the intermediate layer 2, which is applicable to the substrate 3 It is also possible to transfer the surface on the surface of the substrate 3 by directly coating the composition for the intermediate layer to form the intermediate layer 2. The method of forming the adhesive layer 1 on the intermediate layer 2 can be carried out in the same manner as the method of forming the intermediate layer 2 on the adhesive composition substrate 3, and as described above, the present invention can be obtained. A dicing sheet according to an embodiment.
此外,本發明之其一實施形態所有關的切割片,其使用前為了保護黏接劑層1,亦可積層剝離片。剝離片並無特別限制,例如可使用聚(對酞酸乙二酯)、聚丙烯、聚乙烯等以樹脂所形成的薄膜,或上述成分的發泡薄膜,或是玻璃紙、塗被紙、層壓紙等於紙中含聚矽氧類、氟類、長鏈烷基類胺甲酸酯等以剝離劑進型剝離處理過者。 Further, in the dicing sheet according to the embodiment of the present invention, in order to protect the adhesive layer 1 before use, a release sheet may be laminated. The release sheet is not particularly limited, and for example, a film formed of a resin such as poly(ethylene terephthalate), polypropylene, or polyethylene, or a foamed film of the above components, or a cellophane, coated paper, or layer may be used. The pressure paper is equal to the polyether oxide, fluorine, long-chain alkyl urethane or the like in the paper, and is peeled off by a release agent.
本發明之其一實施形態所有關的切割片,於具有 突起狀電極的半導體晶圓的電極形成面上黏貼時使用為佳。就突起狀電極而言,可舉例圓柱形電極、球狀電極等。本發明之其一實施形態所有關的切割片,特別適用於近來越來越常用的具穿孔電極晶圓,對於半導體晶圓的切割片黏貼方法並無特別限制。 A dicing sheet according to an embodiment of the present invention has It is preferable to use it when the electrode formation surface of the semiconductor wafer of the protruding electrode is pasted. As the protruding electrode, a cylindrical electrode, a spherical electrode, or the like can be exemplified. The dicing sheet according to an embodiment of the present invention is particularly suitable for a perforated electrode wafer which is more and more commonly used recently, and the dicing sheet bonding method for the semiconductor wafer is not particularly limited.
接著利用切割刀等切斷方法,將半導體晶圓按每個電路切割成多個以製造半導體晶片,此時的切斷深度,係半導體晶圓的厚度、黏接劑層1以及中間層2的厚度之總和,加上切割刀的磨損度而成的深度。 Next, a semiconductor wafer is cut into a plurality of semiconductor wafers by a cutting method such as a dicing blade to manufacture a semiconductor wafer. The cutting depth at this time is the thickness of the semiconductor wafer, the adhesive layer 1 and the intermediate layer 2. The sum of the thicknesses, plus the depth of the cutter's wear.
切割後根據所需將本發明之其一實施形態所有關的切割片擴展後,疏離各半導體晶片的間距,透過吸附筒夾等常用的方法實施各半導體晶片的頂取,製成半導體晶片。此外,對黏接劑層1照射後,使黏接力低落後實行擴展、頂取為佳。 After the dicing, the dicing sheet according to an embodiment of the present invention is expanded as necessary, and the pitch of each semiconductor wafer is separated, and the semiconductor wafer is lifted by a usual method such as a suction collet to form a semiconductor wafer. In addition, after the adhesive layer 1 is irradiated, it is preferable to perform expansion and topping with a low adhesive force.
與此相同,本發明之其一實施形態所有關的切割片,包含將其黏貼於具突起狀電極的半導體晶圓之電極形成面的製程、將半導體晶圓按每個電路切割成多個以製成半導體晶片的製程,以及頂取半導體晶片的製程,即可製造半導體晶片。這種製造方法中,不容易發生切割片的部分剝離等問題,故可穩定地(引起晶片崩裂等的缺陷少)實行半導體晶圓切割。因此,藉由上述的製造方法,便可穩定地製造品質優良的半導體晶片。 Similarly, the dicing sheet according to the embodiment of the present invention includes a process of adhering the electrode to the electrode forming surface of the semiconductor wafer having the protruding electrode, and cutting the semiconductor wafer into a plurality of circuits. A semiconductor wafer can be fabricated by a process for fabricating a semiconductor wafer and a process for ejecting a semiconductor wafer. In such a manufacturing method, problems such as partial peeling of the dicing sheet are less likely to occur, so that semiconductor wafer dicing can be performed stably (with few defects such as chip cracking). Therefore, by the above-described manufacturing method, it is possible to stably manufacture a semiconductor wafer of excellent quality.
以上說明的實施形態,是為了易於對本發明的理解而記述,並非對本發明進行限定而記述。因此,上述實施形態中所公開的各要素,屬於本發明的技術範圍的所有設計變更 或其均等物亦包含其中。 The embodiments described above are described in order to facilitate understanding of the present invention, and are not intended to limit the present invention. Therefore, each element disclosed in the above embodiment belongs to all design changes of the technical scope of the present invention. Or equivalents thereof are also included.
例如,黏接劑層1與中間層2之間,亦可存在其他層,作為該層的彈性體之性質,係黏接劑層1和中間層2的中間性質的情況下,更能穩定地減少產生部分剝離的可能性。 For example, between the adhesive layer 1 and the intermediate layer 2, other layers may exist, and as the properties of the elastomer of the layer, in the case of the intermediate properties of the adhesive layer 1 and the intermediate layer 2, it is more stable. Reduce the possibility of partial peeling.
此外,黏接劑層1和中間層2不具有明確的界線,黏接劑層1的組成中,與中間層2的組成連續地變化亦佳,在具有這種構造的情況下,便可更為穩定地減少部分剝離產生的可能性。這種情況下,具體可舉例提供黏接劑層1與中間層2的層全部含有丙烯酸類黏接劑,切割片10的基材3之反面上照射電子束。這種情況下,照射面鄰近的聚合將優先進行,便可形成相當於黏接劑層1的區域。 Further, the adhesive layer 1 and the intermediate layer 2 do not have a clear boundary, and the composition of the adhesive layer 1 is preferably continuously changed from the composition of the intermediate layer 2, and in the case of having such a configuration, it is possible to To steadily reduce the possibility of partial peeling. In this case, specifically, the layers of the adhesive layer 1 and the intermediate layer 2 are all provided with an acrylic adhesive, and the opposite surface of the substrate 3 of the dicing sheet 10 is irradiated with an electron beam. In this case, the polymerization adjacent to the irradiation surface is preferentially performed, and a region corresponding to the adhesive layer 1 can be formed.
以下,透過實施例等進一步對本發明進行具體說明,但本發明的範圍並不受這些實施例等限定。 Hereinafter, the present invention will be specifically described by way of Examples and the like, but the scope of the present invention is not limited by these Examples and the like.
(實施例1) (Example 1)
〔黏接劑組成物A之製造〕 [Manufacture of Adhesive Composition A]
將丙烯酸丁酯/甲基丙烯酸甲酯/丙烯酸2-羥乙基酯=62/10/28(質量比)反應後所得到的丙烯酸黏接性聚合物,與該丙烯酸黏接性聚合物之丙烯酸2-羥乙酯單位每100莫耳與80莫耳的丙烯酰氧乙基異氰酸酯(MOI)反應,所得到的能量線硬化型黏接性聚合物(聚苯乙烯換算重量平均分子量(Mw):40萬,以下亦稱「丙烯酸聚合物A」)100質量份、光聚合起始劑(α-羥基環己基苯基甲酮(BASF公司製,「IRUGACURE 184」))3質量份、交聯劑(異氰酸烷基矽化合物(TOYOCHEM CO.,LTD. 製,「BHS-8515」))8質量份(固體含量換算),以及聚合性分支聚合物(NISSAN CHEMICAL INDUSTRIES LTD.製,「OD-007」、聚苯乙烯換算重量平均分子量(Mw):14,000)0.15質量份,於溶劑中混和後便可得到黏接劑組成物A。 Acrylic adhesive polymer obtained by reacting butyl acrylate/methyl methacrylate/2-hydroxyethyl acrylate=62/10/28 (mass ratio), and acrylic acid of the acrylic adhesive polymer The 2-hydroxyethyl ester unit is reacted with 80 mol of acryloyloxyethyl isocyanate (MOI) per 100 mol of the obtained energy ray-curable adhesive polymer (polystyrene-equivalent weight average molecular weight (Mw): 100,000 parts by mass of a photopolymerization initiator (α-hydroxycyclohexyl phenyl ketone ("IRUGACURE 184", manufactured by BASF Corporation)), 3 parts by mass, and a crosslinking agent (Alkyl isocyanate compound (TOYOCHEM CO., LTD. "BHS-8515")) 8 parts by mass (in terms of solid content), and a polymerized branched polymer ("OD-007", manufactured by NISSAN CHEMICAL INDUSTRIES LTD., polystyrene-equivalent weight average molecular weight (Mw): 14,000) 0.15 parts by mass, after being mixed in a solvent, the adhesive composition A was obtained.
〔中間層用組成物之製造〕 [Manufacture of composition for intermediate layer]
將丙烯酸2-乙基己酯/丙烯酸2-羥乙酯=95/5(質量比)反應後得到丙烯酸聚合物(聚苯乙烯換算重量平均分子量(Mw):90萬)。上述丙烯酸聚合物100質量份、以及交聯劑(異氰酸烷基矽化合物(TOYOCHEM CO.,LTD.製,「BHS-8515」))0.5質量份(固體含量換算)於溶劑中混合後,便可獲得中間層用組成物。 The reaction was carried out by reacting 2-ethylhexyl acrylate/2-hydroxyethyl acrylate = 95/5 (mass ratio) to obtain an acrylic polymer (polystyrene-equivalent weight average molecular weight (Mw): 900,000). 100 parts by mass of the above acrylic polymer and 0.5 parts by mass (in terms of solid content) of a crosslinking agent (alkyl sulfonium isocyanate compound ("BHS-8515")) are mixed in a solvent, The composition for the intermediate layer can be obtained.
〔切割片之製造〕 [Manufacture of dicing sheet]
於剝離薄膜(Lintec Corporation製,「SP-PET381031(PF)」)塗佈.乾燥(乾燥條件:100℃、1分鐘)上述中間層用組成物,獲得在剝離薄膜上形成的中間層(厚度:20μm)。接著將中間層和基材(乙烯甲基丙烯酸共聚薄膜,厚度:80μm)對貼,在中間層上剝離剝離薄膜,於基材上轉寫中間層。 Coating on a release film ("SP-PET381031 (PF)", manufactured by Lintec Corporation). The above intermediate layer composition was dried (drying conditions: 100 ° C, 1 minute) to obtain an intermediate layer (thickness: 20 μm) formed on the release film. Next, the intermediate layer and the substrate (ethylene methacrylic copolymer film, thickness: 80 μm) were pasted, and the release film was peeled off on the intermediate layer, and the intermediate layer was transferred onto the substrate.
此外,於剝離薄膜(Lintec Corporation製,「SP-PET381031(PF)」)上塗佈.乾燥(乾燥條件:100℃、1分鐘)上述黏接劑組成物,獲得於剝離薄膜上形成的黏接劑層(厚度:10μm)。 In addition, it was coated on a release film ("SP-PET381031 (PF)", manufactured by Lintec Corporation). The above adhesive composition was dried (drying conditions: 100 ° C, 1 minute) to obtain an adhesive layer (thickness: 10 μm) formed on the release film.
之後,將基材附著中間層與剝離薄膜附著黏接劑層對貼,獲得切割片。 Thereafter, the substrate-attached intermediate layer and the release film-attached adhesive layer were applied to each other to obtain a dicing sheet.
(實施例2) (Example 2)
將烯丙酸丁酯/甲基丙烯酸甲酯/丙烯酸2-羥乙酯 =62/10/28(質量比)反應所得到的丙烯酸黏接性聚合物,與該丙烯酸黏接性聚合物的丙烯酸2-羥乙酯單位每100莫耳與80莫耳的丙烯酰氧乙基異氰酸酯(MOI)反應,得到能量線硬化型黏接性聚合物(聚苯乙烯換算重量平均分子量(Mw):60萬)100質量份、光聚合起始劑(α-羥基環己基苯基甲酮(BASF公司製,「IRUGACURE 184」))3質量份、交聯劑(異氰酸烷基矽化合物(TOYOCHEM CO.,LTD.製「BHS-8515」))8質量份(固體含量換算),以及聚合性分支聚合物(NISSAN CHEMICAL INDUSTRIES LTD.製,「OD-007」,聚苯乙烯換算重量平均分子量(Mw):14,000))0.15質量份於溶劑中混合後,便可獲得黏接劑組成物B。 Butyl allylate / methyl methacrylate / 2-hydroxyethyl acrylate = 62/10/28 (mass ratio) reaction obtained acrylic adhesive polymer, 2-hydroxyethyl acrylate unit with the acrylic adhesive polymer per 100 moles and 80 moles of acryloyloxy The isocyanate (MOI) is reacted to obtain an energy ray-curable adhesive polymer (polystyrene-equivalent weight average molecular weight (Mw): 600,000), 100 parts by mass, and a photopolymerization initiator (α-hydroxycyclohexylphenyl) Ketone ("IRUGACURE 184", manufactured by BASF Corporation)) 8 parts by mass of a crosslinking agent (alkyl sulfonium isocyanate compound ("BHS-8515" manufactured by TOYOCHEM CO., LTD.)) 8 parts by mass (converted in solid content) And a polymerizable branched polymer ("OD-007", manufactured by NISSAN CHEMICAL INDUSTRIES LTD., polystyrene-equivalent weight average molecular weight (Mw): 14,000)) 0.15 parts by mass in a solvent, and an adhesive can be obtained. Composition B.
除了利用所得到的黏接劑組成物B以外,如實施例1進行相同作業後得到切割片。 A dicing sheet was obtained by performing the same operation as in Example 1 except that the obtained adhesive composition B was used.
(實施例3) (Example 3)
將丙烯酸聚合物A100質量份、光聚合起始劑(α-羥基環己基苯基甲酮(BASF公司製,「IRUGACURE 184」))3質量份、交聯劑(異氰酸烷基矽化合物(TOYOCHEM CO.,LTD.製,「BHS-8515」))10質量份(固體含量換算),以及聚合性分支聚合物(NISSAN CHEMICAL INDUSTRIES LTD.製,「OD-007」、聚苯乙烯換算重量平均分子量(Mw):14,000)0.15質量份於溶劑中混合後,便可獲得黏接劑組成物C。 100 parts by mass of an acrylic polymer A and a photopolymerization initiator (α-hydroxycyclohexyl phenyl ketone ("IRUGACURE 184", manufactured by BASF Corporation)), 3 parts by mass, a crosslinking agent (alkyl sulfonium isocyanate compound ( 10 parts by mass (converted to solid content), and a polymerized branched polymer ("OD-007", manufactured by NISSAN CHEMICAL INDUSTRIES LTD., polystyrene-converted weight average), manufactured by TOYOCHEM CO., LTD., "BHS-8515") Molecular weight (Mw): 14,000) 0.15 parts by mass is mixed in a solvent to obtain an adhesive composition C.
除了利用所得到的黏接劑組成物C以外,如實施例1進行相同作業後得到切割片。 A dicing sheet was obtained by performing the same operation as in Example 1 except that the obtained adhesive composition C was used.
(實施例4) (Example 4)
將丙烯酸聚合物A100質量份、光聚合起始劑(α-羥基環己 基苯基甲酮(BASF公司製,「IRUGACURE 184」))3質量份,以及交聯劑(異氰酸烷基矽化合物(TOYOCHEM CO.,LTD.製,「BHS-8515」))8質量份(固體含量換算)於溶劑中混合後,便可獲得黏接劑組成物D。 100 parts by mass of acrylic polymer A, photopolymerization initiator (α-hydroxycyclohexane) Phenyl phenyl ketone ("IRUGACURE 184", manufactured by BASF Corporation)) 3 parts by mass, and a crosslinking agent (alkyl sulfonium isocyanate compound ("BHS-8515", manufactured by TOYOCHEM CO., Ltd.)) The binder composition D can be obtained by mixing the parts (solid content conversion) in a solvent.
除了利用所得到的黏接劑組成物D以外,如實施例1進行相同作業後得到切割片。 A dicing sheet was obtained by performing the same operation as in Example 1 except that the obtained adhesive composition D was used.
(實施例5) (Example 5)
除了中間層的厚度以30μm進行以外,如實施例1進行相同作業後得到切割片。 A dicing sheet was obtained by performing the same operation as in Example 1 except that the thickness of the intermediate layer was carried out at 30 μm.
(實施例6) (Example 6)
除了黏接劑層的厚度以30μm進行以外,如實施例1進行相同作業後得到切割片。 A dicing sheet was obtained by performing the same operation as in Example 1 except that the thickness of the adhesive layer was carried out at 30 μm.
(實施例7) (Example 7)
將丙烯酸2-乙基己酯/丙烯酸2-羥乙酯=80/20(質量比)反應後所得到的丙烯酸黏接性聚合物,和該丙烯酸黏接性聚合物的丙烯酸2-羥乙酯單位每100莫耳與80莫耳的丙烯酰氧乙基異氰酸酯(MOI)反應後所得到的能量線硬化型黏接性聚合物(聚苯乙烯換算重量平均分子量(Mw):100萬)100質量份、光聚合起始劑(α-羥基環己基苯基甲酮(BASF公司製,「IRUGACURE 184」))3質量份,與交聯劑(異氰酸烷基矽化合物(TOYOCHEM CO.,LTD.製,「BHS-8515」))10質量份(固體含量換算)於溶劑中混合後,便可獲得黏接劑組成物E。 Acrylic adhesive polymer obtained by reacting 2-ethylhexyl acrylate/2-hydroxyethyl acrylate=80/20 (mass ratio), and 2-hydroxyethyl acrylate of the acrylic adhesive polymer An energy ray-curable adhesive polymer obtained by reacting 100 mils per 100 moles with 80 moles of acryloyloxyethyl isocyanate (MOI) (polystyrene-equivalent weight average molecular weight (Mw): 1 million) 100 mass a photopolymerization initiator (α-hydroxycyclohexyl phenyl ketone ("IRUGACURE 184", manufactured by BASF Corporation)), 3 parts by mass, and a crosslinking agent (alkyl sulfonium isocyanate compound (TOYOCHEM CO., LTD) . "BHS-8515")) 10 parts by mass (converted in solid content) is mixed in a solvent to obtain an adhesive composition E.
除了利用所得到的黏接劑組成物E以外,如實施例1進行相同作業後得到切割片。 A dicing sheet was obtained in the same manner as in Example 1 except that the obtained adhesive composition E was used.
(測試例1) (Test example 1)
儲存模數G’與損失因數tanδ的測量實施例中調製的黏接劑組成物A裡,將各個D塗佈.乾燥(乾燥條件:100℃、1分鐘)於剝離薄膜(Lintec Corporation製,「SP-PET381031(PF)」)上,獲得於剝離薄膜上形成的黏接劑層(厚度:25μm)。將黏接劑層於剝離薄膜上剝離,重疊使其總厚度達厚度約1mm,製作黏接劑層所有關的測試樣本。對於實施例中所調製的中間層用組成物亦施以相同作業,製造中間層所有關之總厚度約1mm的測試樣本。 In the adhesive composition A prepared in the measurement example of the storage modulus G' and the loss factor tan δ, each D was coated. Drying (drying conditions: 100 ° C, 1 minute) was carried out on a release film ("SP-PET 381031 (PF)" manufactured by Lintec Corporation) to obtain an adhesive layer (thickness: 25 μm) formed on the release film. The adhesive layer was peeled off on the release film and overlapped to have a total thickness of about 1 mm to prepare a test sample relating to the adhesive layer. The same operation was also applied to the composition for the intermediate layer prepared in the examples, and a test sample having a total thickness of about 1 mm in relation to the intermediate layer was produced.
將所得到的測試樣本以直徑8mm的圓盤狀穿孔,嵌入平行片後利用黏接性測量儀器(RHEOMETRIC公司製,「ARES))按下列條件測量。由取得的數據中求出黏接劑層與中間層23℃時的儲存模數G’數值,以及黏接劑層於23℃時的損失因數tanδ數值,其結果,黏接劑層23℃時的儲存模數G’對於中間層23℃時的儲存模數G’的比例如表1所示。 The obtained test sample was perforated with a disk having a diameter of 8 mm, and embedded in a parallel piece, and then measured by the following conditions using an adhesive measuring instrument ("ARES" manufactured by RHEOMETRIC Co., Ltd.). The adhesive layer was determined from the obtained data. The storage modulus G' value at 23 ° C with the intermediate layer, and the loss factor tan δ value at 23 ° C of the adhesive layer, as a result, the storage modulus G' of the adhesive layer at 23 ° C for the intermediate layer 23 ° C The ratio of the storage modulus G' at the time is shown in Table 1, for example.
測量溫度:-30~120℃ Measuring temperature: -30~120°C
升溫速度:3℃/分 Heating rate: 3 ° C / min
測量頻率:1Hz Measuring frequency: 1Hz
(測試例2)照射前黏接力之測量 (Test Example 2) Measurement of adhesion before irradiation
對於實施例中製造的切割片上剝離剝離片後所顯現出的黏接劑層面,利用橡膠滾筒以荷重2kgf黏貼於矽晶片上,切割片黏貼於矽晶片的狀態下,於23℃、相對濕度50%的環境下維持20分鐘後,以JIS Z0237:2000為基準實施180°撕除的黏接力測 試,其結果如表1所示。 The adhesive layer which was formed after peeling off the release sheet on the dicing sheet manufactured in the example was adhered to the enamel wafer by a rubber roller with a load of 2 kgf, and the dicing sheet was adhered to the enamel wafer at 23 ° C and a relative humidity of 50. After 20 minutes in % environment, the 180° peeling adhesion test was performed based on JIS Z0237:2000. The results are shown in Table 1.
(測試例3)確認部分剝離發生之有無 (Test Example 3) Confirming the presence or absence of partial peeling
於實施例中製造的切割上剝離剝離片後所顯現出的黏接劑層面,對於直徑28μm、節距(Pitch)35μm、高度12μm的凹凸以2行5列形成的晶圓利用黏貼設備(Lintec Corporation製,「RAD-3510F/12」)黏貼,黏貼設備的條件如下: The adhesive layer which was formed after peeling off the peeling sheet manufactured in the example was used for a wafer having a diameter of 28 μm, a pitch of 35 μm, and a height of 12 μm in two rows and five columns using a pasting device (Lintec). Made by Corporation, "RAD-3510F/12") The conditions for pasting and pasting equipment are as follows:
壓距:15μm Pressure range: 15μm
突出量:150μm Protruding amount: 150μm
黏貼應力:0.35MPa Adhesion stress: 0.35MPa
黏貼速度:5mm/sec Adhesive speed: 5mm/sec
黏貼溫度:23℃ Adhesion temperature: 23 ° C
於切割片基材側面上觀察凹凸周圍黏接劑層的黏貼狀態,具體而言係要觀察切割片與晶圓之間所產生的氣泡。在23℃、相對50%的環境下靜置24小時之後,再度觀察切割片的基材側面上凹凸周圍黏接劑層的黏貼狀態,根據氣泡現象的變化評價部分剝離發生的有無。無變化時評價為良好(表1中以「A」表示),氣泡變大或起泡之間連結時評價為不良(表1中以「B」表示)。 The adhesion state of the adhesive layer around the unevenness is observed on the side surface of the dicing sheet substrate, specifically, the air bubbles generated between the dicing sheet and the wafer are observed. After standing at 23 ° C for 24 hours in an environment of 50%, the adhesion state of the adhesive layer around the unevenness on the side surface of the substrate of the dicing sheet was observed again, and the presence or absence of partial peeling was evaluated based on the change of the bubble phenomenon. When there was no change, the evaluation was good (indicated by "A" in Table 1), and when the bubbles became large or the bubbles were connected, the evaluation was poor (indicated by "B" in Table 1).
本發明例之實施例1與4至6中所製造的切割片,在23℃中硬化前的黏接劑層儲存模數G’比在23℃中的中間層儲存模數G’大,損失因數tanδ係0.23以上,照射前黏接力係2000mN/25mm以上。利用這種切割片的情況下,無法確認部分剝離,對此,利用作為比較例的實施例2、3與7中所製造的切割片的情況下,便可確認部分剝離。 In the dicing sheets manufactured in Examples 1 and 4 to 6 of the present invention, the storage layer G' of the adhesive layer before hardening at 23 ° C is larger than the storage modulus G' of the intermediate layer at 23 ° C, and the loss is large. The coefficient tan δ is 0.23 or more, and the bonding force before irradiation is 2000 mN/25 mm or more. In the case of using such a dicing sheet, partial peeling could not be confirmed, and in the case of using the dicing sheets produced in Examples 2, 3 and 7 as comparative examples, partial peeling was confirmed.
本發明所有關的切割片適合作為穿孔電極(TSV)等具有凹凸的半導體晶圓之切割片使用。 The dicing sheet according to the present invention is suitably used as a dicing sheet of a semiconductor wafer having irregularities such as a via electrode (TSV).
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| TW105105220A TWI683881B (en) | 2015-03-02 | 2016-02-23 | Method for manufacturing dicing sheet and semiconductor wafer |
Country Status (5)
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| JP (1) | JP6623210B2 (en) |
| KR (1) | KR102451856B1 (en) |
| CN (1) | CN107078037B (en) |
| TW (1) | TWI683881B (en) |
| WO (1) | WO2016139840A1 (en) |
Cited By (1)
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| TWI803605B (en) * | 2018-03-29 | 2023-06-01 | 日商琳得科股份有限公司 | Adhesive composition and adhesive tape |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6906402B2 (en) * | 2017-09-07 | 2021-07-21 | 日東電工株式会社 | Adhesive tape for semiconductor wafer protection |
| JP7125259B2 (en) * | 2017-11-30 | 2022-08-24 | 日東電工株式会社 | Adhesive sheet |
| JP6350845B1 (en) * | 2018-01-29 | 2018-07-04 | サイデン化学株式会社 | Pressure-sensitive adhesive composition, pressure-sensitive adhesive sheet, and method for producing pressure-sensitive adhesive |
| WO2019155970A1 (en) * | 2018-02-07 | 2019-08-15 | リンテック株式会社 | Adhesive tape for semiconductor fabrication |
| JP7155245B2 (en) * | 2018-03-23 | 2022-10-18 | リンテック株式会社 | Die bonding film, dicing die bonding sheet, and method for manufacturing semiconductor chip |
| US10464716B1 (en) * | 2018-05-22 | 2019-11-05 | The Procter & Gamble Company | Container having an adhesively attached fitment |
| JP7285068B2 (en) * | 2018-12-20 | 2023-06-01 | 三井化学東セロ株式会社 | Electronic device manufacturing method |
| JP7541020B2 (en) * | 2019-10-04 | 2024-08-27 | リンテック株式会社 | Expanded Sheet |
Family Cites Families (11)
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|---|---|---|---|---|
| JP2006165004A (en) * | 2004-12-02 | 2006-06-22 | Sumitomo Bakelite Co Ltd | Adhesive tape for processing semiconductor wafer |
| JP2006202926A (en) | 2005-01-19 | 2006-08-03 | Sekisui Chem Co Ltd | Dicing tape |
| JP4643360B2 (en) * | 2005-05-24 | 2011-03-02 | 株式会社イーテック | Adhesive resin composition, and adhesive sheet and method for producing the same |
| JP5379459B2 (en) | 2008-12-03 | 2013-12-25 | 古河電気工業株式会社 | Dicing tape |
| JP2012015340A (en) * | 2010-06-30 | 2012-01-19 | Dainippon Printing Co Ltd | Separator-less dicing tape |
| JP5929004B2 (en) * | 2011-03-30 | 2016-06-01 | 住友ベークライト株式会社 | Adhesive sheet for semiconductor processing |
| JP5975621B2 (en) * | 2011-11-02 | 2016-08-23 | リンテック株式会社 | Dicing sheet and semiconductor chip manufacturing method |
| JP2013197390A (en) * | 2012-03-21 | 2013-09-30 | Lintec Corp | Dicing sheet and method of manufacturing semiconductor chip |
| JP6006953B2 (en) * | 2012-03-23 | 2016-10-12 | リンテック株式会社 | Adhesive sheet for processing electronic parts and method for manufacturing semiconductor device |
| JP5294365B1 (en) * | 2012-09-27 | 2013-09-18 | 古河電気工業株式会社 | Radiation curable adhesive tape for dicing |
| MY178423A (en) * | 2013-03-11 | 2020-10-13 | Lintec Corp | Pressure sensitive adhesive sheet and method of manufacturing processed device-related member |
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2015
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- 2015-10-20 WO PCT/JP2015/079513 patent/WO2016139840A1/en not_active Ceased
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- 2015-10-20 KR KR1020177008353A patent/KR102451856B1/en active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI803605B (en) * | 2018-03-29 | 2023-06-01 | 日商琳得科股份有限公司 | Adhesive composition and adhesive tape |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107078037A (en) | 2017-08-18 |
| KR102451856B1 (en) | 2022-10-06 |
| JPWO2016139840A1 (en) | 2017-12-14 |
| TWI683881B (en) | 2020-02-01 |
| JP6623210B2 (en) | 2019-12-18 |
| CN107078037B (en) | 2020-08-14 |
| KR20170121146A (en) | 2017-11-01 |
| WO2016139840A1 (en) | 2016-09-09 |
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