TWI901193B - Polishing pad and method of forming the same and polishing method - Google Patents
Polishing pad and method of forming the same and polishing methodInfo
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- TWI901193B TWI901193B TW113122028A TW113122028A TWI901193B TW I901193 B TWI901193 B TW I901193B TW 113122028 A TW113122028 A TW 113122028A TW 113122028 A TW113122028 A TW 113122028A TW I901193 B TWI901193 B TW I901193B
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Abstract
Description
本發明是有關於一種研磨墊及其製造方法以及研磨方法,且特別是有關於一種具有偵測窗的研磨墊、所述研磨墊的製造方法及使用所述研磨墊的研磨方法。The present invention relates to a polishing pad, a manufacturing method thereof, and a polishing method, and in particular to a polishing pad having a detection window, a manufacturing method of the polishing pad, and a polishing method using the polishing pad.
在產業的元件製造過程中,研磨製程是現今較常使用來使待研磨的物件表面達到平坦化的一種技術。在研磨製程中,物件是藉由其本身與研磨墊彼此進行相對運動,以及選擇於物件表面及研磨墊之間提供一研磨液來進行研磨。In the industrial component manufacturing process, lapping is a technology commonly used to flatten the surface of the object being polished. During the lapping process, the object is polished by moving it relative to the polishing pad, and a polishing liquid is optionally provided between the object surface and the polishing pad.
對於具有光學偵測系統的研磨設備,研磨墊之研磨層的某部分區域通常設置有偵測窗,其功能是當使用此研磨墊對物件進行研磨時,使用者可藉由研磨設備的光學偵測系統,透過偵測窗來偵測物件的研磨情況,以作為研磨製程的終點偵測(End-Point Detection)並確保研磨品質。Polishing equipment with an optical detection system typically has a detection window located in a certain area of the polishing layer of the polishing pad. This window allows the user to monitor the polishing progress of the object through the optical detection system while the polishing pad is being polished. This serves as end-point detection and ensures polishing quality.
在一些實施方式中,具有偵測窗的研磨墊其結構為偵測窗材料直接與研磨層材料結合,如圖1所示,在研磨過程中承載物件S的研磨頭H將會以旋轉方式B或是以旋轉方式B加上左右來回擺動方式C在研磨墊P的研磨面上進行相對運動。前述過程中產生的剪切力(shear force)與正向力(normal force)將容易破壞研磨層與偵測窗之間的界面,因而造成研磨過程中研磨液滲漏研磨層與偵測窗之間界面的問題,進而影響研磨品質以及偵測窗的效能。In some embodiments, a polishing pad with a detection window has a structure in which the detection window material is directly bonded to the polishing layer material. As shown in Figure 1, during the polishing process, a polishing head H, carrying an object S, moves relative to the polishing surface of the polishing pad P in a rotational motion B or a combination of rotational motion B and left-right oscillation C. The shear and normal forces generated during this process can easily damage the interface between the polishing layer and the detection window, causing polishing fluid to leak through the interface between the polishing layer and the detection window during polishing, thereby affecting polishing quality and the performance of the detection window.
再者,偵測窗與研磨層之間的結合強度(bonding strength)也會因著材料而受到限制,並且隨著研磨墊研磨物件的次數越多,研磨墊的磨損量越來越多,偵測窗與研磨層間的結合面積(bonding area)越來越小,使得偵測窗與研磨層間的界面難以承受研磨製程的應力。因此,目前的研磨墊存在偵測窗與研磨層之間的界面結合強度不足而導致研磨液滲漏的問題,進而影響研磨墊的使用壽命。有鑒於此,如何提升偵測窗與研磨層間的結合強度,而使研磨墊具有良好的使用壽命,實為目前本領域技術人員積極研究的課題之一。Furthermore, the bonding strength between the detection window and the polishing layer is limited by the material used. As the polishing pad wears more and more times, the bonding area between the detection window and the polishing layer decreases, making it difficult for the interface between the detection window and the polishing layer to withstand the stress of the polishing process. Consequently, current polishing pads suffer from insufficient interfacial bonding strength between the detection window and the polishing layer, leading to polishing fluid leakage and thus affecting the lifespan of the polishing pad. Therefore, improving the bonding strength between the detection window and the polishing layer to extend the lifespan of the polishing pad is a topic of active research by technical personnel in this field.
本發明提供一種研磨墊,其中的偵測窗與研磨層之間具有改善的結合強度。The present invention provides a polishing pad having improved bonding strength between a detection window and a polishing layer.
本發明的研磨墊包括研磨層以及至少一偵測窗,至少一偵測窗位於研磨層中,其中所述至少一偵測窗包括中心部以及環繞所述中心部的包覆部,所述包覆部接合於所述研磨層,且所述中心部的面積與包覆部的面積的比值介於約0.03到約5.00。The polishing pad of the present invention includes a polishing layer and at least one detection window. The at least one detection window is located in the polishing layer, wherein the at least one detection window includes a central portion and a covering portion surrounding the central portion. The covering portion is bonded to the polishing layer, and the ratio of the area of the central portion to the area of the covering portion is between about 0.03 and about 5.00.
本發明的研磨墊的製造方法包括以下步驟。形成偵測窗,其包括:預置中心部於第一模具內;以及於第一模具中填入包覆材料並進行第一固化程序以形成包覆中心部的包覆部。將偵測窗預置於第二模具內。灌注研磨層材料於第二模具內並進行第二固化程序以形成接合於包覆部的研磨層。The polishing pad manufacturing method of the present invention includes the following steps: First, forming a detection window, which includes: pre-positioning a central portion within a first mold; then, filling the first mold with a coating material and performing a first curing process to form a coating portion that covers the central portion; then, pre-positioning the detection window within a second mold; then, pouring an abrasive layer material into the second mold and performing a second curing process to form an abrasive layer bonded to the coating portion.
本發明的研磨方法包括以下步驟。提供研磨墊,其中研磨墊如上所述的任一種研磨墊。對物件施加壓力以壓置於研磨墊上。對物件及研磨墊提供相對運動以進行研磨程序。The polishing method of the present invention comprises the following steps: providing a polishing pad, wherein the polishing pad is any of the polishing pads described above; applying pressure to an object to press it against the polishing pad; and providing relative motion between the object and the polishing pad to perform the polishing process.
基於上述,本發明的研磨墊透過偵測窗包括中心部以及環繞中心部的包覆部,包覆部接合於研磨層,且中心部的面積與包覆部的面積的比值介於約0.03到約5.00,藉此使得偵測窗與研磨層之間具有改善的結合強度。另外,本發明研磨墊之偵測窗的包覆部可藉由選擇與研磨層及偵測窗中心部結合度皆較高的材料以克服研磨過程中應力的問題,也可使得研磨層材料以及偵測窗中心部材料的選擇搭配自由度更大,更能達到符合物件所需的研磨品質。Based on the above, the polishing pad of the present invention comprises a detection window comprising a central portion and a surrounding portion. The surrounding portion is bonded to the polishing layer, and the ratio of the area of the central portion to the area of the surrounding portion is between approximately 0.03 and approximately 5.00. This improves the bonding strength between the detection window and the polishing layer. Furthermore, the detection window covering of the polishing pad of the present invention can be made of a material that exhibits a high bond strength with both the polishing layer and the detection window central portion, thereby overcoming stress issues during the polishing process. This also allows for greater flexibility in the selection and combination of materials for the polishing layer and the detection window central portion, thereby achieving the desired polishing quality for the object.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施方式,並配合所附圖式作詳細說明如下。To make the above features and advantages of the present invention more clearly understood, the following specifically provides an implementation method and provides a detailed description with reference to the accompanying drawings.
在本文中,由「一數值至另一數值」表示的範圍,是一種避免在說明書中一一列舉該範圍中的所有數值的概要性表示方式。因此,某一特定數值範圍的記載,涵蓋該數值範圍內的任意數值以及由該數值範圍內的任意數值界定出的較小數值範圍,如同在說明書中明文寫出該任意數值和該較小數值範圍一樣。In this document, a range expressed as "from a value to another value" is a summary expression method that avoids listing all the values within the range one by one in the specification. Therefore, the description of a specific numerical range covers any numerical value within the range and the smaller numerical range defined by any numerical value within the range, just as if the arbitrary numerical value and the smaller numerical range were explicitly written in the specification.
本文使用的「約」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或例如±30%、±20%、±15%、±10%、±5%內。再者,本文使用的「約」或「實質上」可依量測性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about" includes the stated value and the mean within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, as used herein, "about" or "substantially" can be used to select an acceptable range of deviation or standard deviation depending on the measured property or other property, and may not apply to all properties without using a single standard deviation.
應當理解,當諸如層、膜、區域或溝槽的元件被稱為在另一元件「上」、「連接到」或「接觸」另一元件時,其可以直接在另一元件上或與另一元件連接/接觸,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」、「直接連接到」或「直接接觸」另一元件時,不存在中間元件。It should be understood that when an element such as a layer, film, region, or trench is referred to as being "on," "connected to," or "contacting" another element, it can be directly on or connected/contacting the other element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on," "directly connected to," or "directly contacting" another element, there are no intervening elements present.
在圖式中,為了清楚起見,放大了各層、區域及部位的大小與厚度,亦即並未按實際比例繪製。In the drawings, the sizes and thicknesses of layers, regions, and parts are exaggerated for clarity and are not drawn to scale.
圖2A是依照本發明的一實施方式的研磨墊的俯視示意圖。圖2B是圖2A沿A-A’線的剖面示意圖。Figure 2A is a schematic top view of a polishing pad according to an embodiment of the present invention. Figure 2B is a schematic cross-sectional view taken along line A-A' of Figure 2A.
請同時參照圖2A及圖2B,研磨墊100包括研磨層102以及偵測窗104。而在另一實施方式中,研磨墊更包括基底層,該基底層配置於研磨層102下方,如圖3所示(以下將根據圖3進行詳細描述)。2A and 2B , the polishing pad 100 includes a polishing layer 102 and a detection window 104. In another embodiment, the polishing pad further includes a base layer disposed below the polishing layer 102, as shown in FIG3 (described in detail below with reference to FIG3 ).
在本實施方式中,研磨層102例如是由聚合物基材所構成,其中聚合物基材可以是聚酯(polyester)、聚醚(polyether)、聚氨酯(polyurethane)、聚碳酸酯(polycarbonate)、聚丙烯酸酯(polyacrylate)、聚丁二烯(polybutadiene)、或其餘經由合適之熱固性樹脂(thermosetting resin)或熱塑性樹脂(thermoplastic resin)所合成之聚合物基材,但本發明並不限於此。研磨層102除聚合物基材外,另可包含導電材料、研磨顆粒、微球體(micro-sphere)或可溶解添加物於此聚合物基材中。In this embodiment, the polishing layer 102 is formed from a polymer substrate, such as polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, or other polymer substrates synthesized from suitable thermosetting resins or thermoplastic resins, but the present invention is not limited thereto. In addition to the polymer substrate, the polishing layer 102 may also include conductive materials, abrasive particles, microspheres, or soluble additives within the polymer substrate.
在本實施方式中,研磨層102具有研磨面PS以及相對於研磨面PS的背面BS。在本文中,研磨層102的研磨面PS也稱為頂表面;研磨層102具的背面BS也稱為底表面。當使用研磨墊100對物件進行研磨程序時,物件會與研磨層102的研磨面PS接觸。值得一提的是,雖然圖2A及圖2B中未繪示,但任何所屬技術領域中具有通常知識者應周知研磨面PS上包括溝槽圖案,且溝槽圖案可具有多種不同態樣的圖案分布,例如是同心環狀、不同心環狀、橢圓環狀、波浪環狀、不規則環狀、多條直線狀、平行直線狀、放射直線狀、放射弧線狀、螺旋狀、多角格狀、或其組合,但本發明並不限於此。In this embodiment, the polishing layer 102 has a polishing surface PS and a back surface BS opposite the polishing surface PS. Herein, the polishing surface PS of the polishing layer 102 is also referred to as the top surface, and the back surface BS of the polishing layer 102 is also referred to as the bottom surface. When the polishing pad 100 is used to polish an object, the object comes into contact with the polishing surface PS of the polishing layer 102. It is worth mentioning that, although not shown in FIG. 2A and FIG. 2B , anyone skilled in the art will appreciate that the polishing surface PS includes a groove pattern, and the groove pattern may have a variety of different pattern distributions, such as concentric rings, non-concentric rings, elliptical rings, wavy rings, irregular rings, multiple straight lines, parallel straight lines, radial straight lines, radial arcs, spirals, polygonal grids, or combinations thereof, but the present invention is not limited thereto.
偵測窗104位於研磨層102中。如圖2A及圖2B所示,偵測窗104包括中心部104a以及環繞中心部104a的包覆部104b。也就是說,偵測窗104包括兩個部分。從另一觀點而言,如圖2A及圖2B所示,中心部104a與包覆部104b直接接觸。Detection window 104 is located within polishing layer 102. As shown in Figures 2A and 2B , detection window 104 includes a central portion 104a and a surrounding portion 104b surrounding central portion 104a. In other words, detection window 104 consists of two parts. From another perspective, as shown in Figures 2A and 2B , central portion 104a and surrounding portion 104b are in direct contact.
另外,如圖2A及圖2B所示,包覆部104b接合於研磨層102。也就是說,偵測窗104透過包覆部104b固定至研磨層102。換言之,包覆部104b接合在中心部104a與研磨層102之間。從另一觀點而言,如圖2B所示,中心部104a與包覆部104b的接合界面以及包覆部104b與研磨層102的接合界面都為平滑面。也就是說,在本實施方式中,中心部104a的側表面S1、包覆部104b的內側表面S2及外側表面S3以及研磨層102的內側表面S4都為平滑面。然而,本發明並不限於此。在其他實施方式中,中心部104a的側表面S1、包覆部104b的內側表面S2及外側表面S3以及研磨層102的內側表面S4中的每一者可以是粗糙面,所述粗糙面例如是螺旋面(如圖4A所示)、波紋面(如圖4B所示)或顆粒面(如圖4C所示)。也就是說,在前述實施方式中,中心部104a與包覆部104b的接合界面以及包覆部104b與研磨層102的接合界面可為粗糙面。值得一提的是,透過將中心部104a的側表面S1、包覆部104b的內側表面S2及外側表面S3以及研磨層102的內側表面S4中的每一者設計為粗糙面,可以增加中心部104a、包覆部104b與研磨層102彼此之間的接觸面積,進而增加三者之間的緊密度。而在另一實施方式中,也可將中心部104a的側表面S1與包覆部104b的內側表面S2設計為粗糙面,將包覆部104b的外側表面S3與研磨層102的內側表面S4中設計為光滑面,藉此來增加中心部104a與包覆部104b之間的接觸面積以進而增加偵測窗104之中心部104a與包覆部104b之間的結合強度。Furthermore, as shown in Figures 2A and 2B , the covering portion 104b is bonded to the polishing layer 102. In other words, the detection window 104 is secured to the polishing layer 102 via the covering portion 104b. In other words, the covering portion 104b is bonded between the central portion 104a and the polishing layer 102. From another perspective, as shown in Figure 2B , the bonding interface between the central portion 104a and the covering portion 104b, as well as the bonding interface between the covering portion 104b and the polishing layer 102, are all smooth surfaces. In other words, in this embodiment, the side surface S1 of the central portion 104a, the inner surface S2 and outer surface S3 of the covering portion 104b, and the inner surface S4 of the polishing layer 102 are all smooth surfaces. However, the present invention is not limited to this. In other embodiments, each of the side surface S1 of the central portion 104a, the inner surface S2 and outer surface S3 of the covering portion 104b, and the inner surface S4 of the polishing layer 102 may be a roughened surface, such as a spiral surface (as shown in FIG4A ), a corrugated surface (as shown in FIG4B ), or a granular surface (as shown in FIG4C ). In other words, in the aforementioned embodiment, the bonding interface between the central portion 104a and the covering portion 104b, as well as the bonding interface between the covering portion 104b and the polishing layer 102, may be a roughened surface. It is worth mentioning that by designing each of the side surface S1 of the central portion 104a, the inner surface S2 and outer surface S3 of the covering portion 104b, and the inner surface S4 of the polishing layer 102 as rough surfaces, the contact area between the central portion 104a, the covering portion 104b and the polishing layer 102 can be increased, thereby increasing the density among the three. In another embodiment, the side surface S1 of the central portion 104a and the inner surface S2 of the covering portion 104b may be designed as rough surfaces, and the outer surface S3 of the covering portion 104b and the inner surface S4 of the polishing layer 102 may be designed as smooth surfaces, thereby increasing the contact area between the central portion 104a and the covering portion 104b and further increasing the bonding strength between the central portion 104a and the covering portion 104b of the detection window 104.
在本實施方式中,中心部104a的面積與包覆部104b的面積的比值介於約0.03到約5.00。詳細而言,若中心部104a的面積與包覆部104b的面積的比值小於約0.03,則代表包覆部104b的面積遠大於中心部104a的面積,如此一來,由於包覆部104b的面積過大,將使得研磨面PS上的研磨區域因縮小而容易造成物件(被研磨物)於研磨過程中同時研磨到研磨面PS上的研磨區域與包覆部104b之頂表面TSb上的區域,抑或是更甚造成物件於研磨過程中主要是研磨到包覆部104之頂表面TSb上的區域而非研磨到主要應用來研磨物件的研磨面PS上的研磨區域,進而將會影響研磨表現,如物件的平坦度(planarity)不如預期、物件產生表面凹陷(dishing)或易使物件產生缺陷等問題。若中心部104a的面積與包覆部104b的面積的比值大於約5.00,則代表包覆部104b的面積小於中心部104a的面積的1/5,如此一來,因為包覆部104b的面積過小,也就是包覆部104b的寬度d很小,將導致中心部104a與包覆部104b以及包覆部104b與研磨層102間的界面結合力因為過小的寬度d,難以抵抗研磨過程中承載物件的研磨頭對研磨墊所施加的橫向剪切力與正向(重力方向)的施加壓力,進而造成界面的脫開或破裂。值得一提的是,透過將中心部104a的面積與包覆部104b的面積比值設計在介於約0.03至約5.00的範圍內,以使偵測窗104與研磨層102之間的界面結合力提升。In this embodiment, the ratio of the area of the central portion 104a to the area of the covering portion 104b is between about 0.03 and about 5.00. Specifically, if the ratio of the area of the central portion 104a to the area of the covering portion 104b is less than about 0.03, it means that the area of the covering portion 104b is much larger than the area of the central portion 104a. In this case, due to the excessive area of the covering portion 104b, the polishing area on the polishing surface PS will be reduced, which may easily cause the object (object to be polished) to be polished simultaneously on the polishing area on the polishing surface PS and the covering portion 104b during the polishing process. 4b, or even worse, the object is mainly ground on the top surface TSb of the cover portion 104 during the grinding process rather than on the grinding area on the grinding surface PS that is primarily used to grind the object. This will affect the grinding performance, such as the flatness of the object being worse than expected, the object generating surface dishing, or the object being more susceptible to defects. If the ratio of the area of the central portion 104a to the area of the covering portion 104b is greater than approximately 5.00, it means that the area of the covering portion 104b is less than 1/5 of the area of the central portion 104a. In this case, because the area of the covering portion 104b is too small, that is, the width d of the covering portion 104b is very small, the interfacial bonding force between the central portion 104a and the covering portion 104b, and between the covering portion 104b and the polishing layer 102, due to the excessively small width d, will be unable to withstand the lateral shear force and the positive pressure (in the direction of gravity) applied to the polishing pad by the polishing head carrying the object during the polishing process, thereby causing the interface to separate or break. It is worth mentioning that by designing the area ratio of the central portion 104a to the covering portion 104b to be within a range of about 0.03 to about 5.00, the interfacial bonding strength between the detection window 104 and the polishing layer 102 is enhanced.
在本實施方式中,如圖2B所示,中心部104a具有彼此相對的頂表面TSa及底表面USa,其中中心部104a的頂表面TSa與研磨層102的研磨面PS相鄰接,且中心部104a的底表面USa與研磨層102的背面BS也相鄰接。換言之,中心部104a的頂表面TSa及底表面USa分別與研磨層102的頂表面(即研磨面PS)及底表面(即背面BS)共平面。另一方面,如圖2B所示,包覆部104b具有彼此相對的頂表面TSb及底表面USb,其中包覆部104b的頂表面TSb與研磨層102的研磨面PS相鄰接,且包覆部104b的底表面USb與研磨層102的背面BS也相鄰接。換言之,包覆部104b的頂表面TSb及底表面USb分別與研磨層102的頂表面(即研磨面PS)及底表面(即背面BS)共平面。從另一觀點而言,在如圖2B所示之實施方式中,中心部104a的頂表面TSa、包覆部104b的頂表面TSb及研磨層102的頂表面(即研磨面PS)皆共平面;且中心部104a的底表面USa、包覆部104b的底表面USb及研磨層102的底表面(即背面BS)皆共平面。In this embodiment, as shown in FIG2B , the central portion 104 a has a top surface TSa and a bottom surface USa facing each other, wherein the top surface TSa of the central portion 104 a is adjacent to the polishing surface PS of the polishing layer 102, and the bottom surface USa of the central portion 104 a is also adjacent to the back surface BS of the polishing layer 102. In other words, the top surface TSa and the bottom surface USa of the central portion 104 a are coplanar with the top surface (i.e., the polishing surface PS) and the bottom surface (i.e., the back surface BS) of the polishing layer 102, respectively. On the other hand, as shown in FIG2B , the covering portion 104 b has a top surface TSb and a bottom surface USb facing each other, wherein the top surface TSb of the covering portion 104 b is adjacent to the polishing surface PS of the polishing layer 102, and the bottom surface USb of the covering portion 104 b is also adjacent to the back surface BS of the polishing layer 102. In other words, the top surface TSb and the bottom surface USb of the covering portion 104 b are coplanar with the top surface (i.e., the polishing surface PS) and the bottom surface (i.e., the back surface BS) of the polishing layer 102, respectively. From another perspective, in the embodiment shown in FIG2B , the top surface TSa of the central portion 104a, the top surface TSb of the cladding portion 104b, and the top surface of the polishing layer 102 (i.e., the polishing surface PS) are all coplanar; and the bottom surface USa of the central portion 104a, the bottom surface USb of the cladding portion 104b, and the bottom surface of the polishing layer 102 (i.e., the back surface BS) are all coplanar.
在本實施方式中,中心部104a可以由任何所屬技術領域中具有通常知識者所周知的可使用於研磨墊的偵測窗的材料所構成。舉例而言,偵測窗104的中心部104a的材料可以是透明的高分子聚合物,例如熱固性塑膠或熱塑性塑膠。從另一觀點而言,在本實施方式中,中心部104a的材料在可見光下具有透光性。詳言之,對於波長介於380 nm至780 nm之間的光,中心部104a的透光率至少為40% 。如此一來,當使用研磨墊100對物件進行研磨時,使用者可藉由光學偵測系統,透過偵測窗104的中心部104a來偵測物件的研磨情況,以作為研磨製程的終點偵測並確保研磨品質。In this embodiment, the central portion 104a can be made of any material known to those skilled in the art for use as a detection window for a polishing pad. For example, the material of the central portion 104a of the detection window 104 can be a transparent polymer, such as a thermosetting plastic or a thermoplastic plastic. From another perspective, in this embodiment, the material of the central portion 104a is translucent under visible light. Specifically, the transmittance of the central portion 104a is at least 40% for light with a wavelength between 380 nm and 780 nm. Thus, when the polishing pad 100 is used to polish an object, the user can use the optical detection system to detect the polishing condition of the object through the central portion 104a of the detection window 104, so as to detect the end point of the polishing process and ensure the polishing quality.
在本實施方式中,包覆部104b可包括聚酯(polyester)、聚醚(polyether)、聚氨酯(polyurethane)、聚碳酸酯(polycarbonate)、聚丙烯酸酯(polyacrylate)、聚丁二烯(polybutadiene)、或其餘經由合適之熱固性樹脂(thermosetting resin)或熱塑性樹脂(thermoplastic resin)所合成之聚合物基材。在本實施方式中,包覆部104b的材料不同於中心部104a的材料。詳言之,在一實施方式中,中心部104a的材料在可見光下具有透光性,而包覆部104b的材料在可見光下不具有透光性。在另一實施方式中,包覆部104b和中心部104a的硬度不相同,且中心部104a的硬度與包覆部104b的硬度的比值不大於約1.8。詳細而言,若中心部104a的硬度與包覆部104b的硬度的比值大於約1.8,會因為中心部104a與包覆部104b的硬度差過大,而導致包覆部104b於研磨過程中易於被中心部104a擠壓進而破壞中心部104a與包覆部104b之間的界面,使得影響研磨墊的使用壽命。值得一提的是,透過將中心部104a的硬度與包覆部104b的硬度的比值設計在不大於約1.8的範圍內,除了偵測窗104與研磨層102之間的界面結合力提升,也使得在研磨過程中中心部104a與包覆部104b的磨耗量在研磨過程中不會差異太大而導致影響物件的研磨品質、偵測窗104的偵測品質或是研磨墊的壽命。In this embodiment, the coating portion 104b may include polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, or other polymeric substrates synthesized from suitable thermosetting resins or thermoplastic resins. In this embodiment, the material of the coating portion 104b is different from the material of the core portion 104a. Specifically, in one embodiment, the material of the core portion 104a is translucent under visible light, while the material of the coating portion 104b is not translucent under visible light. In another embodiment, the coating portion 104b and the core portion 104a have different hardnesses, and the ratio of the hardness of the core portion 104a to the hardness of the coating portion 104b is no greater than approximately 1.8. Specifically, if the ratio of the hardness of the central portion 104a to the hardness of the covering portion 104b is greater than approximately 1.8, the difference in hardness between the central portion 104a and the covering portion 104b is too large, causing the covering portion 104b to be easily squeezed by the central portion 104a during the polishing process, thereby damaging the interface between the central portion 104a and the covering portion 104b, thereby affecting the service life of the polishing pad. It is worth noting that by designing the ratio of the hardness of the central portion 104a to the hardness of the covering portion 104b to be within a range of no greater than approximately 1.8, not only is the interfacial bonding strength between the detection window 104 and the polishing layer 102 enhanced, but the wear rate of the central portion 104a and the covering portion 104b during the polishing process is also prevented from being significantly different, thereby affecting the polishing quality of the object, the detection quality of the detection window 104, or the life of the polishing pad.
從另一觀點而言,在一實施方式中,包覆部104b的材料相同於研磨層102的材料,亦即包覆部104b與研磨層102包含相同的聚合物基材,前述聚合物基材可以包括聚酯(polyester)、聚醚(polyether)、聚氨酯(polyurethane)、聚碳酸酯(polycarbonate)、聚丙烯酸酯(polyacrylate)、聚丁二烯(polybutadiene)、或其餘經由合適之熱固性樹脂(thermosetting resin)或熱塑性樹脂(thermoplastic resin)所合成之聚合物基材。在此需特別說明的是,雖然包覆部104b與研磨層102是由相同的聚合物基材所製成,但是可以藉由調整製程條件(如灌注量、氣體壓力、反應溫度、模具的設計等製程條件但不限於此),選擇性地讓包覆部104b與研磨層102具有相同或是不同的物性(例如是硬度、密度或是壓縮率)。詳言之,在一實施方式中,選用聚氨酯(polyurethane)當作包覆部104b與研磨層102的聚合物基材,以灌注模具成型法來製造包覆部104b與研磨層102,其中藉由使包覆部104b與研磨層102具有不同的製程條件(如灌注量、氣體壓力、反應溫度、模具的設計等製程條件但不限於此),可以讓所製得的包覆部104b與研磨層102具有不同的硬度、密度或是壓縮率。換言之,可藉由調整包覆部104b與研磨層102的製程條件(如灌注量、氣體壓力、反應溫度、模具的設計等製程條件但不限於此),來達到使包覆部104b與研磨層102具有預定之物性(例如是硬度、密度或是壓縮率)。值得一提的是,透過包覆部104b和研磨層102具有相同的材料,使得包覆部104b的材料特性和研磨層102的材料特性具有較佳的材料相容性,進而有效提升包覆部104b與研磨層102之間的界面結合力。From another perspective, in one embodiment, the material of the coating portion 104b is the same as the material of the polishing layer 102, that is, the coating portion 104b and the polishing layer 102 include the same polymer substrate. The aforementioned polymer substrate may include polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, or other polymer substrates synthesized from suitable thermosetting resins or thermoplastic resins. It should be noted that although the coating portion 104b and the polishing layer 102 are made of the same polymer substrate, the coating portion 104b and the polishing layer 102 can selectively have the same or different physical properties (such as hardness, density, or compressibility) by adjusting process conditions (such as, but not limited to, injection volume, gas pressure, reaction temperature, and mold design). Specifically, in one embodiment, polyurethane is selected as the polymer base material of the coating portion 104b and the polishing layer 102, and the coating portion 104b and the polishing layer 102 are manufactured using an injection molding method. By making the coating portion 104b and the polishing layer 102 have different process conditions (such as, but not limited to, injection volume, gas pressure, reaction temperature, and mold design), the resulting coating portion 104b and the polishing layer 102 can have different hardness, density, or compressibility. In other words, by adjusting the process conditions of the coating 104b and the polishing layer 102 (such as, but not limited to, the injection volume, gas pressure, reaction temperature, and mold design), the coating 104b and the polishing layer 102 can achieve predetermined physical properties (such as hardness, density, or compressibility). It is worth noting that by using the same material for the coating 104b and the polishing layer 102, the material properties of the coating 104b and the polishing layer 102 have better material compatibility, thereby effectively improving the interfacial bonding strength between the coating 104b and the polishing layer 102.
在另一實施方式中,包覆部104b的材料不同於研磨層102的材料。在此需特別說明的是,雖然包覆部104b與研磨層102是由不同的聚合物基材所製成,但是除了可藉由不同聚合物基材的挑選以使包覆部104b與研磨層102具有較佳的材料相容性,也可以藉由調整製程條件(如灌注量、氣體壓力、反應溫度、模具的設計等製程條件但不限於此),選擇性地讓包覆部104b與研磨層102具有相近的物性(例如是硬度、密度或是壓縮率),使得包覆部104b和研磨層102之間具有較佳的材料相容性,進而有效提升包覆部104b與研磨層102之間的界面結合力。值得一提的是,可以藉由調整製程條件(如灌注量、氣體壓力、反應溫度、模具的設計等製程條件但不限於此),使得由不同材料所製得的包覆部104b和研磨層102具有相近的物性(例如是硬度、密度或是壓縮率),在包覆部104b和研磨層102的材料選擇上具有更大的自由度。In another embodiment, the material of the coating 104b is different from that of the polishing layer 102. It should be noted that although the coating 104b and the polishing layer 102 are made of different polymer substrates, in addition to ensuring better material compatibility between the coating 104b and the polishing layer 102 by selecting different polymer substrates, the coating 104b and the polishing layer 102 can also be selectively adjusted to have similar physical properties (such as hardness, density, or compressibility) between the coating 104b and the polishing layer 102 by adjusting process conditions (such as, but not limited to, injection volume, gas pressure, reaction temperature, and mold design). This allows for better material compatibility between the coating 104b and the polishing layer 102, thereby effectively enhancing the interfacial bonding strength between the coating 104b and the polishing layer 102. It is worth mentioning that by adjusting process conditions (such as, but not limited to, injection volume, gas pressure, reaction temperature, mold design, etc.), the coating 104b and the polishing layer 102 made of different materials can have similar physical properties (such as hardness, density, or compressibility), which provides greater freedom in the selection of materials for the coating 104b and the polishing layer 102.
在本實施方式中,中心部104a和包覆部104b的外輪廓可依照實際所需而設計成各種形狀,例如圓形、橢圓形、梭形或雨滴形。也就是說,中心部104a和包覆部104b的外輪廓的形狀可為不規則形狀或正幾何形狀(Regular Geometric Shape)。如圖2A所示,中心部104a和包覆部104b的外輪廓的形狀都為梭形。也就是說,在此實施方式中,中心部104a的外輪廓與包覆部104b的外輪廓的形狀相同且都為不規則形狀。然而,本發明並不限於此。在另一實施方式中,中心部104a的外輪廓與包覆部104b的外輪廓的形狀相同且都為正幾何形狀。舉例而言,如圖5A所示,中心部104a和包覆部104b的外輪廓的形狀都為圓形。在又一實施方式中,中心部104a的外輪廓與包覆部104b的外輪廓的形狀不相同。舉例而言,如圖5B所示,中心部104a的外輪廓的形狀為圓形,而包覆部104b的外輪廓的形狀為梭形;如圖5C所示,中心部104a的外輪廓的形狀為雨滴形,而包覆部104b的外輪廓的形狀為圓形;以及如圖5D所示,中心部104a的外輪廓的形狀為雨滴形,而包覆部104b的外輪廓的形狀為梭形,但不以此限定本發明。In this embodiment, the outer contours of the central portion 104a and the covering portion 104b can be designed into various shapes according to actual needs, such as a circle, an ellipse, a spindle, or a raindrop shape. In other words, the outer contours of the central portion 104a and the covering portion 104b can be irregular or regular geometric shapes. As shown in FIG2A , the outer contours of the central portion 104a and the covering portion 104b are both spindle-shaped. In other words, in this embodiment, the outer contours of the central portion 104a and the covering portion 104b are the same in shape and are both irregular. However, the present invention is not limited to this. In another embodiment, the outer contours of the central portion 104a and the covering portion 104b are the same in shape and are both regular geometric shapes. For example, as shown in FIG5A , the outer contours of the central portion 104a and the outer contours of the covering portion 104b are both circular. In another embodiment, the outer contours of the central portion 104a and the outer contours of the covering portion 104b are different. For example, as shown in FIG5B , the outer contour of the central portion 104a is circular, while the outer contour of the covering portion 104b is spindle-shaped; as shown in FIG5C , the outer contour of the central portion 104a is raindrop-shaped, while the outer contour of the covering portion 104b is circular; and as shown in FIG5D , the outer contour of the central portion 104a is raindrop-shaped, while the outer contour of the covering portion 104b is spindle-shaped, but the present invention is not limited thereto.
另外,雖然圖2A和圖2B中繪示偵測窗104的數量為一個,但本發明並不限於此。在其他實施方式中,依照實際所需,偵測窗104的數量也可以是兩個、三個或是更多個。也就是說,只要研磨層102中設置有至少一個偵測窗104即落入本發明的範疇。Furthermore, while Figures 2A and 2B illustrate a single detection window 104, the present invention is not limited thereto. In other embodiments, the number of detection windows 104 may be two, three, or more, depending on practical needs. In other words, as long as at least one detection window 104 is provided in the polishing layer 102, it falls within the scope of the present invention.
在另一實施方式中,研磨墊可更包括基底層,其係配置於研磨層下方。詳細而言,如圖3所示,研磨墊100’包括有研磨層102以及基底層106,其中基底層106位於研磨層102下方。詳言之,基底層106的主要作用在於襯墊研磨層102並固定於研磨平台(未繪示)上。如圖3所示,基底層106也位於偵測窗104的包覆部104b下方。詳細而言,如圖3所示,基底層106的內側表面S5與包覆部104b的內側表面S2實質上對齊。也就是說,包覆部104b完全與基底層106相重疊。然而,本發明並不限於此。在另一實施方式中,在包覆部104b與研磨層102的接合界面與基底層106重疊的情況下,基底層106的內側表面S5與包覆部104b的內側表面S2不對齊(例如:內側表面S2和內側表面S5之間可具有一間距)。另外,在本實施方式中,基底層106可藉由黏著層(未繪示)與包覆部104b和研磨層102黏接在一起。另外,在本實施方式中,基底層106的主要材料例如是聚氨酯、聚乙烯、聚丙烯、聚乙烯與乙烯醋酸乙烯酯的共聚合物、或聚丙烯與乙烯醋酸乙烯酯的共聚合物,或是任何目前已知可使用於研磨墊的基底層之材料。In another embodiment, the polishing pad may further include a base layer, which is disposed below the polishing layer. Specifically, as shown in FIG3 , the polishing pad 100′ includes a polishing layer 102 and a base layer 106, wherein the base layer 106 is located below the polishing layer 102. Specifically, the base layer 106 primarily functions to cushion the polishing layer 102 and is secured to a polishing platform (not shown). As shown in FIG3 , the base layer 106 is also located below the covering portion 104b of the detection window 104. Specifically, as shown in FIG3 , the inner surface S5 of the base layer 106 is substantially aligned with the inner surface S2 of the covering portion 104b. In other words, the covering portion 104b completely overlaps with the base layer 106. However, the present invention is not limited thereto. In another embodiment, when the interface between the coating 104b and the polishing layer 102 overlaps with the base layer 106, the inner surface S5 of the base layer 106 is not aligned with the inner surface S2 of the coating 104b (for example, there may be a distance between the inner surface S2 and the inner surface S5). Furthermore, in this embodiment, the base layer 106 may be bonded to the coating 104b and the polishing layer 102 via an adhesive layer (not shown). Furthermore, in this embodiment, the primary material of the base layer 106 may be, for example, polyurethane, polyethylene, polypropylene, a copolymer of polyethylene and ethylene vinyl acetate, or a copolymer of polypropylene and ethylene vinyl acetate, or any other currently known material that can be used for a base layer of a polishing pad.
值得一提的是,在本實施方式中,透過將中心部104a的面積與包覆部104b的面積的比值設計為介於約0.03到約5.00,並使包覆部104b與中心部104a的接合界面與基底層106重疊,能夠有效提升偵測窗104與研磨層102之間的界面結合力,使得當使用研磨墊100’對物件進行研磨時,包覆部104b與研磨層102之間的接合界面不會因承受所施加的下壓壓力而導致脫層(delamination)進而造成研磨滲漏至研磨墊脫層處並影響研磨墊的使用壽命。如此一來,在研磨墊100’中,偵測窗104與研磨層102之間的界面結合力提升。It is worth mentioning that in this embodiment, by designing the ratio of the area of the central portion 104a to the area of the covering portion 104b to be between approximately 0.03 and approximately 5.00, and by making the bonding interface between the covering portion 104b and the central portion 104a overlap with the base layer 106, the interfacial bonding force between the detection window 104 and the polishing layer 102 can be effectively enhanced. When the polishing pad 100' is used to polish an object, the bonding interface between the covering portion 104b and the polishing layer 102 will not delaminate due to the applied downward pressure, thereby preventing polishing leakage to the delaminated area of the polishing pad and affecting the service life of the polishing pad. As a result, the interfacial bonding force between the detection window 104 and the polishing layer 102 in the polishing pad 100' is enhanced.
為了證實本發明所提出之偵測窗104與研磨層102之間具有改善的界面結合力,實際做了界面結合力的測試。在實驗測試中,所使用的測試方法以及樣本設定如下,且測試結果列於表1-1與表1-2中。To verify the improved interfacial bonding strength between the detection window 104 and the polishing layer 102 proposed in the present invention, an interfacial bonding strength test was conducted. The test method and sample settings used in the experimental test are as follows, and the test results are listed in Tables 1-1 and 1-2.
結合力測試方法:採用ASTM D412標準測試方法,以測量偵測窗與研磨層之間的結合力。Bonding strength test method: ASTM D412 standard test method is used to measure the bonding strength between the detection window and the polishing layer.
樣本1至樣本4:樣本1至樣本4皆為具有偵測窗的單層研磨墊(即不包含有基底層的研磨墊),其中樣本1配置有習知的偵測窗,而樣本2至樣本4配置有本發明之包含有中心部及包覆部的偵測窗,且樣本2至樣本4所配置的偵測窗的差異在於:中心部的面積與包覆部的面積的比值。Samples 1 to 4: All of these samples are single-layer polishing pads with detection windows (i.e., polishing pads without a base layer). Sample 1 is equipped with a conventional detection window, while Samples 2 to 4 are equipped with the detection window of the present invention, comprising a central portion and an enveloping portion. The difference between the detection windows of Samples 2 to 4 lies in the ratio of the central portion area to the enveloping portion area.
樣本5至樣本8:樣本5至樣本8皆為具有偵測窗的雙層研磨墊(即包含有研磨層和基底層的研磨墊),其中樣本5配置有習知的偵測窗,而樣本6至樣本8配置有本發明之包含有中心部及包覆部的偵測窗,且樣本6至樣本8所配置的偵測窗的差異在於:中心部的面積與包覆部的面積的比值。Samples 5 to 8: All of these samples are double-layer polishing pads with detection windows (i.e., polishing pads comprising a polishing layer and a base layer). Sample 5 is equipped with a conventional detection window, while Samples 6 to 8 are equipped with the detection window of the present invention, comprising a central portion and an enveloping portion. The difference between the detection windows of Samples 6 to 8 lies in the ratio of the area of the central portion to the area of the enveloping portion.
表1-1
表1-2
由上述表1-1的內容可知,樣本1之習知的偵測窗與研磨層之間的結合力為93.6 kgf/mm 2,樣本2至樣本4之本發明的偵測窗與研磨層之間的結合力分別為130.6 kgf/mm 2、128.2 kgf/mm 2與101.5 kgf/mm 2,其中樣本2至樣本4具有不同結合力是因為具有不同的中心部與包覆部的面積比值。由此可知,與樣本1的研磨墊相比,樣本2至樣本4的研磨墊之偵測窗與研磨層之間具有較佳的結合力。同樣的實驗結果也可以由上述表1-2得知。詳細而言,樣本5之習知的偵測窗與研磨層之間的結合力為79.9 kgf/mm 2,樣本6至樣本8之本發明的偵測窗與研磨層之間的結合力分別為136.7 kgf/mm 2、118.0 kgf/mm 2與84.9 kgf/mm 2,其中樣本6至樣本8具有不同結合力是因為具有不同的中心部與包覆部的面積比值。由此可知,與樣本5的研磨墊相比,樣本6至樣本8的研磨墊之偵測窗與研磨層之間具有較佳的結合力。由上述表1-1和表1-2的結果顯示,不論研磨墊是單層研磨墊,或是由研磨層與基底層所組成的雙層研磨墊,皆可透過以本發明之偵測窗來取代習知的偵測窗,而使得偵測窗與研磨層之間的界面結合力提升。換言之,透過包括由中心部及包覆部所組成,且中心部的面積與包覆部的面積比值設計在介於約0.03至約5.00的範圍內的偵測窗結構,確實可以使研磨墊中的偵測窗與研磨層之間的界面結合力提升。 As shown in Table 1-1, the bonding strength between the conventional detection window and the polishing layer in Sample 1 is 93.6 kgf/ mm² , while the bonding strength between the detection window of the present invention and the polishing layer in Samples 2 through 4 is 130.6 kgf/ mm² , 128.2 kgf/ mm², and 101.5 kgf/ mm² , respectively. The different bonding strengths in Samples 2 through 4 are due to the different center-to-cover area ratios. This indicates that the bonding strength between the detection window and the polishing layer in Samples 2 through 4 is superior to that in Sample 1. Similar experimental results can also be seen in Table 1-2. Specifically, the bonding force between the conventional detection window and the polishing layer in Sample 5 was 79.9 kgf/ mm² , while the bonding forces between the detection window of the present invention and the polishing layer in Samples 6 through 8 were 136.7 kgf/ mm² , 118.0 kgf/ mm² , and 84.9 kgf/ mm² , respectively. The different bonding forces in Samples 6 through 8 are due to the different area ratios of the center portion to the cladding portion. This indicates that the bonding force between the detection window and the polishing layer in the polishing pads of Samples 6 through 8 is better than that in the polishing pad of Sample 5. The results in Tables 1-1 and 1-2 above demonstrate that, regardless of whether the polishing pad is a single-layer polishing pad or a double-layer polishing pad consisting of a polishing layer and a base layer, replacing a conventional detection window with the detection window of the present invention can enhance the interfacial bonding strength between the detection window and the polishing layer. In other words, a detection window structure comprising a central portion and a covering portion, with a central portion area to covering portion area ratio designed within a range of approximately 0.03 to approximately 5.00, can indeed enhance the interfacial bonding strength between the detection window and the polishing layer in a polishing pad.
下列表2記載使用具有不同的中心部的硬度與包覆部的硬度的比值之研磨墊樣本,依據ASTM D412標準測試方法所測量到的偵測窗之中心部與包覆部之間的結合力。Table 2 below lists the bonding strength between the center portion and the cover portion of the detection window measured according to the ASTM D412 standard test method using polishing pad samples with different ratios of the center portion hardness to the cover portion hardness.
表2中的樣本9至樣本13皆為具有本發明之偵測窗的單層研磨墊,且樣本9至樣本13分別形成有不同的中心部的硬度與包覆部的硬度的比值。Samples 9 to 13 in Table 2 are all single-layer polishing pads having the detection window of the present invention, and Samples 9 to 13 have different ratios of the hardness of the center portion to the hardness of the coating portion.
表2
由上述表2的內容可知,樣品9之偵測窗的中心部的硬度與包覆部的硬度的比值為0.85,所測得的偵測窗之中心部與包覆部之間的結合力可高達217.7 kgf/mm 2,而隨著將偵測窗的中心部的硬度與包覆部的硬度的比值變更為樣本10至樣本13的0.88、1.00、1.81與2.01,所測得的偵測窗之中心部與包覆部之間的結合力降低為207.3 kgf/mm 2、93.6 kgf/mm 2、87.6 kgf/mm 2與87.8 kgf/mm 2。由此可知,隨著偵測窗之中心部的硬度與包覆部的硬度的比值的增加,偵測窗之中心部與包覆部之間的結合力隨之下降。從另一觀點而言,當以橫軸為偵測窗之中心部的硬度與包覆部的硬度的比值,且縱軸為偵測窗之中心部與包覆部之間的結合力來繪製趨勢圖時,可以發現當中心部的硬度與包覆部的硬度的比值超過1.8之後,結合力的數值呈現收斂狀態,趨近於定值。此結果顯示,透過將中心部的硬度與包覆部的硬度的比值設計在不大於約1.8範圍內,可以有效地提升中心部與包覆部之間的結合力。進一步,在將中心部的硬度與包覆部的硬度的比值設計在不大於約1.8範圍內的情況下,當將中心部的面積與包覆部的面積比值設計在介於約0.03至約5.00的範圍內,可以一併提升偵測窗與研磨層之間的界面結合力(如前述表1-1和表1-2所示)。 As shown in Table 2, the ratio of the hardness of the detection window's center to the covering's hardness for Sample 9 is 0.85, resulting in a measured bonding force of 217.7 kgf/ mm² between the detection window's center and the covering. As the ratio of the hardness of the detection window's center to the covering's hardness increases to 0.88, 1.00, 1.81, and 2.01 for Samples 10, 13, and 14, the measured bonding forces between the detection window's center and the covering decrease to 207.3 kgf/ mm² , 93.6 kgf/ mm² , 87.6 kgf/ mm² , and 87.8 kgf/ mm² , respectively. As can be seen, as the ratio of the hardness of the detection window's center to the hardness of the covering increases, the bonding strength between the detection window's center and the covering decreases. From another perspective, when a trend graph is plotted with the ratio of the hardness of the detection window's center to the hardness of the covering on the horizontal axis and the bonding strength between the detection window's center and the covering on the vertical axis, it can be seen that when the ratio of the hardness of the center to the covering exceeds 1.8, the bonding strength converges and approaches a constant value. This result shows that by designing the ratio of the hardness of the center to the covering to be within a range of approximately 1.8 or less, the bonding strength between the center and the covering can be effectively improved. Furthermore, when the ratio of the hardness of the central portion to the hardness of the covering portion is designed to be within a range of no greater than about 1.8, and the ratio of the area of the central portion to the area of the covering portion is designed to be within a range of about 0.03 to about 5.00, the interfacial bonding strength between the detection window and the polishing layer can be improved (as shown in Tables 1-1 and 1-2 above).
另外,以下將參照圖6A至圖6F來說明研磨墊100的製造方法。應注意的是,上述各實施方式中的研磨墊100雖然是如以下所述的製造方法為例進行說明,但本發明的研磨墊100的製造方法並不以此為限,並且研磨墊100中相同或相似之構件的材料、厚度或功效以於上文中進行詳盡的描述,於此不再重複贅述。圖6A至圖6F是依照本發明的一實施方式的研磨墊的製造流程的剖面示意圖。6A to 6F are referenced below to illustrate the manufacturing method of the polishing pad 100. It should be noted that while the polishing pad 100 in the aforementioned embodiments is described using the manufacturing method described below as an example, the manufacturing method of the polishing pad 100 of the present invention is not limited thereto. The materials, thicknesses, and functions of the same or similar components of the polishing pad 100 have been described in detail above and will not be repeated here. Figures 6A to 6F are schematic cross-sectional views of the manufacturing process of a polishing pad according to one embodiment of the present invention.
首先,先形成偵測窗104的中心部104a,中心部104a具有預定之外輪廓形狀,所述外輪廓形狀可為不規則形狀或正幾何形狀(Regular Geometric Shape),所述外輪廓形狀可例如圖5A至5D所示。形成具有預定之外輪廓形狀的中心部104a的方法可以有兩種,第一種是事先將預定之外輪廓形狀(例如梭形)製作在模具上,經固化程序後,即可獲得具有預定之外輪廓形狀(例如梭形)的中心部104a。第二種是不將預定之外輪廓形狀(例如梭形)製作在模具上,先經固化程序後,獲得具有常規之外輪廓形狀(例如長方形)的透光材料層,再對所述透光材料層進行加工(例如機械加工)以形成具有預定之外輪廓形狀(例如梭形)的中心部104a。在本實施方式中,係以第一種製造方法來說明之。如圖6A所示,藉由使用模具10直接形成具有預定之外輪廓形狀的中心部104a。詳細步驟如下:提供模具10。模具10具有模腔12,其用以容納模製材料之用。在本實施方式中,模腔12的形狀以及大小是根據後續欲形成之中心部104a的外輪廓的形狀及大小有關。也就是說,如圖2A所示,模腔12的形狀為梭形。另外,為了使此領域技術人員能夠清楚的瞭解本發明,在以下之圖式中,僅繪示出局部之模具10,也就是省略繪製模具10之上蓋結構。接著,將透光材料填入模具10的模腔12中,並進行固化程序以於模具10中形成中心部104a。在本實施方式中,將透光材料填入模具10的模腔12中的方法包括灌注法。在本實施方式中,用以固化透光材料的固化程序包括照光程序、加熱程序、加壓程序或靜置程序。詳細而言,所述固化程序例如包括進行照光或加熱使透光材料產生聚合反應,而達到固化;或者例如包括進行透光材料內之反應物進行自然的聚合反應,而達到固化;或者例如包括對透光材料進行加壓以使透光材料產生聚合反應,而達到固化。最後,移除模具10,得到具有預定之外輪廓形狀的中心部104a。其中,在本實施方式中,用於形成中心部104a的透光材料在可見光下透光。First, the central portion 104a of the detection window 104 is formed. The central portion 104a has a predetermined outer contour. The outer contour can be an irregular shape or a regular geometric shape. For example, the outer contour can be as shown in Figures 5A to 5D. There are two methods for forming the central portion 104a having the predetermined outer contour. The first method is to pre-form the predetermined outer contour (e.g., a spindle shape) on a mold. After a curing process, the central portion 104a having the predetermined outer contour (e.g., a spindle shape) is obtained. The second method is to pre-form the predetermined outer contour (e.g., a spindle shape) on a mold. After a curing process, a light-transmitting material layer having a regular outer contour (e.g., a rectangle) is obtained. The light-transmitting material layer is then processed (e.g., machined) to form the central portion 104a having the predetermined outer contour (e.g., a spindle shape). In this embodiment, the first manufacturing method is used for explanation. As shown in FIG6A , a center portion 104a having a predetermined outer contour shape is directly formed by using a mold 10. The detailed steps are as follows: Provide a mold 10. The mold 10 has a mold cavity 12, which is used to accommodate molding material. In this embodiment, the shape and size of the mold cavity 12 are related to the shape and size of the outer contour of the center portion 104a to be formed subsequently. That is, as shown in FIG2A , the shape of the mold cavity 12 is spindle-shaped. In addition, in order to enable technical personnel in this field to clearly understand the present invention, in the following figures, only a part of the mold 10 is shown, that is, the upper cover structure of the mold 10 is omitted. Then, the light-transmitting material is filled into the mold cavity 12 of the mold 10, and a curing process is performed to form the center portion 104a in the mold 10. In the present embodiment, the method of filling the light-transmitting material into the mold cavity 12 of the mold 10 includes a pouring method. In the present embodiment, the curing process for curing the light-transmitting material includes an irradiation process, a heating process, a pressurization process, or a static process. In detail, the curing process includes, for example, irradiating or heating the light-transmitting material to cause a polymerization reaction to achieve curing; or, for example, causing the reactants in the light-transmitting material to undergo a natural polymerization reaction to achieve curing; or, for example, pressurizing the light-transmitting material to cause a polymerization reaction to achieve curing. Finally, the mold 10 is removed to obtain a center portion 104a having a predetermined outer contour shape. In this embodiment, the light-transmitting material used to form the center portion 104a is translucent under visible light.
接著,在形成具有預定之外輪廓形狀的中心部104a之後,形成具有預定之外輪廓形狀的包覆部104b以得到偵測窗104,包覆部104b的外輪廓形狀可如圖5A至5D所示。請同時參照圖6B及圖6C,說明藉由使用模具20直接形成具有預定之外輪廓形狀的包覆部104b的方式。詳細步驟如下:如圖6B所示,提供模具20。模具20具有模腔22,其用以容納模製材料之用。在本實施方式中,模腔22的形狀以及大小是根據後續欲形成之包覆部104b的外輪廓的形狀及大小有關。也就是說,如圖2A所示,模腔22的形狀為梭形。詳細而言,如圖2A所示,中心部104a的外輪廓與包覆部104b的外輪廓的形狀相同,因此模具20的外輪廓與模具10的外輪廓可相同。然而,如前文所述,中心部104a的外輪廓與包覆部104b的外輪廓的形狀可彼此不相同,因此在此情況下,模具20的外輪廓與模具10的外輪廓可不相同。另外,為了使此領域技術人員能夠清楚的瞭解本發明,在以下之圖式中,僅繪示出局部之模具20,也就是省略繪製模具20之上蓋結構。之後,請繼續參照圖6B,於模具20的模腔22內之特定位置配置中心部104a。詳細而言,如圖6B所示,中心部104a與模具20的內側緣間隔一距離。在本實施方式中,如圖6B所示,中心部104a的厚度與模腔22的深度相當。此外,可以藉由模具20與上蓋結構壓置方式,或以黏膠方式,將中心部104a固定於模具20之特定位置。Next, after forming the center portion 104a having a predetermined outer contour shape, a covering portion 104b having a predetermined outer contour shape is formed to obtain the detection window 104. The outer contour shape of the covering portion 104b can be as shown in Figures 5A to 5D. Please refer to Figures 6B and 6C at the same time to explain the method of directly forming the covering portion 104b having a predetermined outer contour shape by using a mold 20. The detailed steps are as follows: As shown in Figure 6B, a mold 20 is provided. The mold 20 has a mold cavity 22, which is used to accommodate molding material. In this embodiment, the shape and size of the mold cavity 22 are related to the shape and size of the outer contour of the covering portion 104b to be formed subsequently. That is, as shown in Figure 2A, the shape of the mold cavity 22 is spindle-shaped. Specifically, as shown in FIG2A , the outer contours of the central portion 104a and the outer contours of the covering portion 104b are identical, and thus the outer contours of the mold 20 can be identical to the outer contours of the mold 10. However, as previously described, the outer contours of the central portion 104a and the outer contours of the covering portion 104b can differ from each other. In this case, the outer contours of the mold 20 can also differ from the outer contours of the mold 10. Furthermore, to facilitate a clear understanding of the present invention by those skilled in the art, only a portion of the mold 20 is depicted in the following figures, i.e., the upper cover structure of the mold 20 is omitted. Subsequently, please continue to refer to FIG6B to arrange the central portion 104a at a specific position within the mold cavity 22 of the mold 20. Specifically, as shown in Figure 6B , the center portion 104a is spaced a distance from the inner edge of the mold 20. In this embodiment, as shown in Figure 6B , the thickness of the center portion 104a corresponds to the depth of the mold cavity 22. Furthermore, the center portion 104a can be secured to a specific position within the mold 20 by pressing the mold 20 against the upper cover structure or by adhesive.
然後,請同時參照圖6B及圖6C,將包覆材料填入模具20的模腔22中,以於模具20中環繞中心部104a。在本實施方式中,將包覆材料填入模具20的模腔22中的方法包括灌注法。接著,進行固化程序使包覆材料固化,以於模具20中形成包覆中心部104a的包覆部104b。在本實施方式中,中心部104a的側表面S1與包覆部104b的內側表面S2相連接。在本實施方式中,用以固化包覆材料的固化程序包括照光程序、加熱程序、加壓程序或靜置程序。詳細而言,所述固化程序例如包括進行照光或加熱使包覆材料產生聚合反應,而達到固化;或者例如包括進行包覆材料內之反應物進行自然的聚合反應,而達到固化;或者例如包括對包覆材料進行加壓以使透光材料產生聚合反應,而達到固化。最後,移除模具20,以得到具有預定之外輪廓形狀的中心部104a及包覆部104b。然而,本發明並不限於此。在另一實施方式中,形成具有預定之外輪廓形狀的包覆部104b的方式可以分成兩個步驟:第一步驟是先利用模具得到具有常規形狀(例如長方形)的包覆材料層,在此步驟中所使用的模具20之模腔22的形狀以及大小與後續欲形成之包覆部104b的外輪廓的預定形狀及大小無關。在此實施方式中,在進行固化包覆材料的固化程序以形成包覆材料層之後,接著進行第二步驟,對包覆材料層進行加工(例如藉由機械製程)來移除部分的包覆材料層以形成具預定形狀(例如梭形)的包覆部104b。在本實施方式中,用於形成包覆部104b的包覆材料與用於形成中心部104a的透光材料不相同。在本實施方式中,如前文所述,所述預定形狀為不規則形狀或正幾何形狀。Then, referring to both FIG. 6B and FIG. 6C , the coating material is filled into the mold cavity 22 of the mold 20 so as to surround the central portion 104a in the mold 20. In this embodiment, the method for filling the coating material into the mold cavity 22 of the mold 20 includes a pouring method. Next, a curing process is performed to cure the coating material to form a coating portion 104b that covers the central portion 104a in the mold 20. In this embodiment, the side surface S1 of the central portion 104a is connected to the inner surface S2 of the coating portion 104b. In this embodiment, the curing process for curing the coating material includes a light irradiation process, a heating process, a pressurization process, or a static process. In detail, the curing process includes, for example, irradiating the coating material with light or applying heat to cause a polymerization reaction to achieve curing; or, for example, causing the reactants in the coating material to undergo a natural polymerization reaction to achieve curing; or, for example, applying pressure to the coating material to cause the light-transmitting material to undergo a polymerization reaction to achieve curing. Finally, the mold 20 is removed to obtain the central portion 104a and the coating portion 104b having a predetermined outer contour shape. However, the present invention is not limited to this. In another embodiment, the method of forming the coating portion 104b having a predetermined outer contour shape can be divided into two steps: the first step is to use a mold to obtain a coating material layer having a conventional shape (e.g., a rectangle). The shape and size of the mold cavity 22 of the mold 20 used in this step are unrelated to the predetermined shape and size of the outer contour of the coating portion 104b to be formed subsequently. In this embodiment, after the coating material is cured to form a coating layer, a second step is performed in which the coating layer is processed (e.g., by mechanical processing) to remove a portion of the coating layer to form a coating portion 104b having a predetermined shape (e.g., a spindle shape). In this embodiment, the coating material used to form the coating portion 104b is different from the light-transmitting material used to form the central portion 104a. In this embodiment, as previously described, the predetermined shape is either an irregular shape or a regular geometric shape.
接著,在形成偵測窗104之後,形成與偵測窗104的包覆部104b接合的研磨層102。請同時參照圖6D及圖6E,藉由使用模具30形成研磨層102。詳細步驟如下:如圖6D所示,提供模具30。模具30具有模腔32,其用以容納模製材料之用。在本實施方式中,模腔32的形狀以及大小是根據後續欲形成之研磨層102的形狀及大小有關。也就是說,如圖2A所示,模腔32的形狀為圓形。另外,為了使此領域技術人員能夠清楚的瞭解本發明,在以下之圖式中,僅繪示出局部之模具30,也就是省略繪製模具30之上蓋結構。之後,請繼續參照圖6D,於模具30的模腔32內之特定位置配置偵測窗104,此特定位置對應至光學偵測系統的位置。在本實施方式中,如圖6D所示,偵測窗104的厚度與模腔32的深度相當。此外,可以藉由模具30與上蓋結構壓置方式,或以黏膠方式,將偵測窗104固定於模具30之特定位置。Next, after forming the detection window 104, a polishing layer 102 is formed to be bonded to the covering portion 104b of the detection window 104. Please refer to Figures 6D and 6E at the same time, and the polishing layer 102 is formed by using a mold 30. The detailed steps are as follows: As shown in Figure 6D, a mold 30 is provided. The mold 30 has a mold cavity 32, which is used to accommodate molding material. In this embodiment, the shape and size of the mold cavity 32 are related to the shape and size of the polishing layer 102 to be formed subsequently. That is, as shown in Figure 2A, the shape of the mold cavity 32 is circular. In addition, in order to enable technical personnel in this field to clearly understand the present invention, only a portion of the mold 30 is shown in the following figures, that is, the upper cover structure of the mold 30 is omitted. Next, referring to Figure 6D , a detection window 104 is placed at a specific location within the mold cavity 32 of the mold 30. This specific location corresponds to the position of the optical detection system. In this embodiment, as shown in Figure 6D , the thickness of the detection window 104 is equal to the depth of the mold cavity 32. Furthermore, the detection window 104 can be secured to the specific location of the mold 30 by pressing the mold 30 against the upper cover structure or by adhesive.
然後,請同時參照圖6D及圖6E,將研磨層材料填入模具30的模腔32中,以於模具30中環繞偵測窗104。在本實施方式中,將研磨層材料填入模具30的模腔32中的方法包括灌注法。接著,進行固化程序使研磨層材料固化,以於模具30中形成研磨層102。在本實施方式中,包覆部104b的外側表面S3與研磨層102的內側表面S4相連接。在本實施方式中,用以固化研磨層材料的固化程序包括照光程序、加熱程序、加壓程序或靜置程序。詳細而言,所述固化程序例如包括進行照光或加熱使研磨層材料產生聚合反應,而達到固化;或者例如包括進行研磨層材料內之反應物進行自然的聚合反應,而達到固化;或者例如包括對研磨層材料進行加壓以使透光材料產生聚合反應,而達到固化。在一實施方式中,用於形成包覆部104b的包覆材料與用於形成研磨層102的研磨層材料相同。在另一實施方式中,用於形成包覆部104b的包覆材料與用於形成研磨層102的研磨層材料不相同。Then, referring to both FIG. 6D and FIG. 6E , the polishing layer material is filled into the mold cavity 32 of the mold 30 to surround the detection window 104 in the mold 30. In this embodiment, the method for filling the polishing layer material into the mold cavity 32 of the mold 30 includes a pouring method. Next, a curing process is performed to solidify the polishing layer material to form the polishing layer 102 in the mold 30. In this embodiment, the outer surface S3 of the covering portion 104b is connected to the inner surface S4 of the polishing layer 102. In this embodiment, the curing process for curing the polishing layer material includes a light irradiation process, a heating process, a pressurization process, or a static process. Specifically, the curing process may include, for example, irradiating the polishing layer material with light or applying heat to induce polymerization, thereby achieving curing; or, for example, causing reactants within the polishing layer material to undergo a natural polymerization reaction, thereby achieving curing; or, for example, applying pressure to the polishing layer material to induce polymerization of the light-transmitting material, thereby achieving curing. In one embodiment, the coating material used to form the coating portion 104b is the same as the polishing layer material used to form the polishing layer 102. In another embodiment, the coating material used to form the coating portion 104b is different from the polishing layer material used to form the polishing layer 102.
最後,請同時參照圖6E及圖6F,移除模具30而得到具有偵測窗104的研磨墊100,其中偵測窗104包括中心部104a以及環繞中心部104a的包覆部104b,其中包覆部104b接合於研磨層102,且偵測窗104之中心部104a的面積與包覆部104b的面積的比值介於約0.03到約5.00,藉此使得偵測窗104與研磨層102之間具有改善的結合強度。Finally, referring to both FIG. 6E and FIG. 6F , the mold 30 is removed to obtain a polishing pad 100 having a detection window 104, wherein the detection window 104 includes a central portion 104a and a covering portion 104b surrounding the central portion 104a, wherein the covering portion 104b is bonded to the polishing layer 102, and the ratio of the area of the central portion 104a of the detection window 104 to the area of the covering portion 104b is between approximately 0.03 and approximately 5.00, thereby improving the bonding strength between the detection window 104 and the polishing layer 102.
圖7是依照本發明的其他實施方式的研磨墊的製造流程的剖面示意圖。請同時參照圖7和圖6F,圖7中示出的研磨墊100’相似於圖6F中示出的研磨墊100,因此相同或相似的元件以相同或相似的符號表示,且相關說明即不再贅述。詳細而言,製造研磨墊100’與製造研磨墊100的方法主要差異在於:在製造研磨墊100’的流程中,在形成研磨層102及偵測窗104之後,於研磨層102及偵測窗104的包覆部104b下方形成基底層106。在一實施方式中,例如是先形成一連續的基底層材料於研磨層102及偵測窗104下方,接著移除對應至偵測窗104的中心部104a的部分基底層材料而成為基底層106。另外,在一實施方式中,於研磨層102及偵測窗104的包覆部104b下方形成基底層106之前,可選擇性地於研磨層102及偵測窗104的包覆部104b下方形成黏著層(未繪示),用以黏接基底層106至研磨層102及偵測窗104的包覆部104b。黏著層例如是膠層,其包括(但不限於):無載體膠、雙面膠、UV硬化膠、熱熔膠、溼氣硬化膠或感壓膠(Pressure Sensitive Adhesive,PSA),上述膠層的材料例如是壓克力系膠、環氧樹脂系膠或聚氨酯系膠。然而,本發明並不限於此。在其他實施方式中,可透過塗佈、噴塗、堆疊或印刷方式以直接形成基底層106於研磨層102及偵測窗104的包覆部104b下方,而不需要使用黏著層,同時可以減少移除部分基底層材料的程序。FIG7 is a schematic cross-sectional view of a manufacturing process for a polishing pad according to another embodiment of the present invention. Referring to FIG7 and FIG6F , the polishing pad 100′ shown in FIG7 is similar to the polishing pad 100 shown in FIG6F . Therefore, identical or similar components are denoted by identical or similar reference numerals, and the related descriptions are omitted. Specifically, the method for manufacturing the polishing pad 100′ differs from the method for manufacturing the polishing pad 100 in that, in the manufacturing process for the polishing pad 100′, after forming the polishing layer 102 and the detection window 104, a base layer 106 is formed beneath the covering portion 104b of the polishing layer 102 and the detection window 104. In one embodiment, for example, a continuous base layer material is first formed below the polishing layer 102 and the detection window 104, and then a portion of the base layer material corresponding to the central portion 104a of the detection window 104 is removed to form the base layer 106. Furthermore, in one embodiment, before forming the base layer 106 below the polishing layer 102 and the covering portion 104b of the detection window 104, an adhesive layer (not shown) may be optionally formed below the polishing layer 102 and the covering portion 104b of the detection window 104 to bond the base layer 106 to the polishing layer 102 and the covering portion 104b of the detection window 104. The adhesive layer is, for example, an adhesive layer, including but not limited to: carrier-free adhesive, double-sided adhesive, UV-curable adhesive, hot melt adhesive, moisture-curable adhesive, or pressure-sensitive adhesive (PSA). The materials of the adhesive layer are, for example, acrylic, epoxy, or polyurethane adhesives. However, the present invention is not limited thereto. In other embodiments, the base layer 106 can be formed directly beneath the polishing layer 102 and the covering portion 104b of the detection window 104 by coating, spraying, stacking, or printing, without the need for an adhesive layer. This also reduces the need to remove some of the base layer material.
圖8是依照本發明的一實施方式的研磨方法的流程圖。此研磨方法適用於研磨物件。詳細而言,此研磨方法可應用於製造工業元件的研磨製程,例如是應用於電子產業的元件,其可包括半導體、積體電路、微機電、能源轉換、通訊、光學、儲存碟片、及顯示器等元件,而製作這些元件所使用的物件可包括半導體晶圓、ⅢⅤ族晶圓、儲存元件載體、陶瓷基底、高分子聚合物基底、及玻璃基底等,但並非用以限定本發明的範圍。FIG8 is a flow chart of a polishing method according to an embodiment of the present invention. This polishing method is suitable for polishing an object. Specifically, this polishing method can be applied to the polishing process for manufacturing industrial components, such as components used in the electronics industry, which may include semiconductors, integrated circuits, micro-electromechanical components, energy conversion, communications, optics, storage disks, and displays. The objects used to manufacture these components may include semiconductor wafers, IIIV wafers, storage device carriers, ceramic substrates, polymer substrates, and glass substrates, but the scope of the present invention is not limited thereto.
請參照圖8,首先,進行步驟S10,提供研磨墊。詳言之,在本實施方式中,研磨墊包括任一前述實施方式中的研磨層100或100’。而研磨墊100與研磨墊100’的相關描述已於前文進行詳盡地說明,故於此不再贅述。Referring to Figure 8 , first, step S10 is performed to provide a polishing pad. Specifically, in this embodiment, the polishing pad includes the polishing layer 100 or 100' described in any of the aforementioned embodiments. The polishing pad 100 and the polishing pad 100' have been described in detail above and will not be further elaborated here.
接著,進行步驟S12,對物件施加壓力,藉此物件會被壓置於研磨墊上,並與研磨墊接觸。詳細而言,如前文所述,物件是與研磨層102中的研磨面PS接觸。另外,對物件施加壓力的方式例如是使用能夠固持物件的載具來進行。Next, step S12 is performed to apply pressure to the object, thereby pressing the object onto the polishing pad and causing it to contact the polishing pad. Specifically, as described above, the object contacts the polishing surface PS of the polishing layer 102. Alternatively, applying pressure to the object can be accomplished using, for example, a carrier capable of holding the object.
之後,進行步驟S14,對物件及研磨墊提供相對運動,以利用研磨墊對物件進行研磨程序,而達到平坦化的目的。詳細而言,對物件及研磨墊提供相對運動的方法例如是:透過研磨平台進行旋轉來帶動固定於研磨平台上的研磨墊旋轉。Next, step S14 is performed to provide relative motion between the object and the polishing pad, thereby polishing the object with the polishing pad to achieve planarization. Specifically, the relative motion between the object and the polishing pad can be achieved by, for example, rotating the polishing platform to drive the polishing pad fixed to the polishing platform to rotate.
綜上所述,在本發明的研磨墊中,透過偵測窗包括中心部以及環繞中心部的包覆部,包覆部接合於研磨層,且中心部的面積與包覆部的面積的比值介於約0.03到約5.00,藉此使得偵測窗與研磨層之間具有改善的結合強度。In summary, in the polishing pad of the present invention, the detection window includes a central portion and a covering portion surrounding the central portion, the covering portion is bonded to the polishing layer, and the ratio of the area of the central portion to the area of the covering portion is between about 0.03 and about 5.00, thereby achieving improved bonding strength between the detection window and the polishing layer.
另外,在本發明的研磨墊中,在偵測窗之包覆部的材料選擇上即是藉由選擇與研磨層及偵測窗中心部結合度皆較高的材料以克服研磨過程中應力的問題,也可使得研磨層材料以及偵測窗中心部材料的選擇搭配自由度更大,更能達到符合物件所需的研磨品質。Furthermore, in the polishing pad of the present invention, the material selection for the cover portion of the detection window is chosen by selecting a material that has a high degree of adhesion to both the polishing layer and the center portion of the detection window to overcome stress issues during the polishing process. This also allows for greater freedom in the selection and matching of the polishing layer material and the detection window center material, thereby achieving the polishing quality required by the object.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above in the form of embodiments, it is not intended to limit the present invention. Anyone with ordinary skill in the art may make slight modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the attached patent application.
10、20、30:模具 12、22、32:模腔 100、100’、P:研磨墊 102:研磨層 104:偵測窗 104a:中心部 104b:包覆部 106:基底層 B:旋轉方式 BS:背面 C:左右來回擺動方式 d:寬度 H:研磨頭 S:物件 S1:側表面 S2、S4、S5:內側表面 S3:外側表面 PS:研磨面 S10、S12、S14:步驟 TSa、TSb:頂表面 USa、USb:底表面 10, 20, 30: Mold 12, 22, 32: Mold cavity 100, 100', P: Polishing pad 102: Polishing layer 104: Detection window 104a: Center 104b: Cover 106: Base layer B: Rotational BS: Back C: Left-right swing d: Width H: Polishing head S: Object S1: Side surface S2, S4, S5: Inner surface S3: Outer surface PS: Polishing surface S10, S12, S14: Steps TSa, TSb: Top surface USa, USb: Bottom surface
圖1是習知的研磨系統的剖面示意圖。 圖2A是依照本發明的一實施方式的研磨墊的俯視示意圖。 圖2B是圖2A沿A-A’線的剖面示意圖。 圖3是依照本發明的其他實施方式的研磨墊的剖面示意圖。 圖4A至圖4C是依照本發明的一些實施方式的中心部、包覆部或研磨層的側表面的剖面示意圖。 圖5A至圖5D是依照本發明的其他實施方式的偵測窗的俯視示意圖。 圖6A至圖6F是依照本發明的一實施方式的研磨墊的製造流程的剖面示意圖。 圖7是依照本發明的其他實施方式的研磨墊的製造流程的剖面示意圖。 圖8是依照本發明的一實施方式的研磨方法的流程圖。 Figure 1 is a schematic cross-sectional view of a conventional polishing system. Figure 2A is a schematic top view of a polishing pad according to one embodiment of the present invention. Figure 2B is a schematic cross-sectional view taken along line A-A' of Figure 2A. Figure 3 is a schematic cross-sectional view of a polishing pad according to another embodiment of the present invention. Figures 4A to 4C are schematic cross-sectional views of the central portion, the cover portion, or the side surface of the polishing layer according to some embodiments of the present invention. Figures 5A to 5D are schematic top views of a detection window according to another embodiment of the present invention. Figures 6A to 6F are schematic cross-sectional views of a manufacturing process for a polishing pad according to one embodiment of the present invention. Figure 7 is a schematic cross-sectional view of a manufacturing process for a polishing pad according to another embodiment of the present invention. Figure 8 is a flow chart of a grinding method according to one embodiment of the present invention.
100:研磨墊 100: Grinding pad
102:研磨層 102: Polishing layer
104:偵測窗 104: Detection Window
104a:中心部 104a: Center
104b:包覆部 104b: Covering
BS:背面 BS: Back
d:寬度 d: width
S1:側表面 S1: Side surface
S2、S4:內側表面 S2, S4: Inner surface
S3:外側表面 S3: External surface
PS:研磨面 PS: Grinding surface
TSa、TSb:頂表面 TSa, TSb: Top surface
USa、USb:底表面 USa, USb: bottom surface
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200408494A (en) * | 2002-11-19 | 2004-06-01 | Iv Technologies Co Ltd | Method of fabricating a polishing pad having a detection window thereon |
| US6824447B2 (en) * | 2001-07-03 | 2004-11-30 | Rodel Nitta Corporation | Perforated-transparent polishing pad |
| TW200628262A (en) * | 2004-12-10 | 2006-08-16 | Toyo Tire & Rubber Co | Polishing pad |
| TW200806426A (en) * | 2006-07-28 | 2008-02-01 | Powerchip Semiconductor Corp | Polishing pad and fabrication method thereof |
| TW200824841A (en) * | 2006-07-03 | 2008-06-16 | Applied Materials Inc | Polishing pad with window having multiple portions |
| TW201039981A (en) * | 2009-04-23 | 2010-11-16 | Applied Materials Inc | Treatment of polishing pad window |
| TW201121710A (en) * | 2009-12-31 | 2011-07-01 | Iv Technologies Co Ltd | Method of manufacturing polishing pad having detection window and polishing pad having detection window |
| US20170092551A1 (en) * | 2006-10-31 | 2017-03-30 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
| TW201729940A (en) * | 2016-02-26 | 2017-09-01 | 應用材料股份有限公司 | Window in thin polishing pad |
| TW201912300A (en) * | 2017-08-22 | 2019-04-01 | 智勝科技股份有限公司 | Polishing pad, manufacturing method of a polishing pad and polishing method |
| JP2021053765A (en) * | 2019-09-30 | 2021-04-08 | 富士紡ホールディングス株式会社 | Polishing pad |
| CN113478382A (en) * | 2021-07-20 | 2021-10-08 | 湖北鼎汇微电子材料有限公司 | Detection window, chemical mechanical polishing pad and polishing system |
-
2023
- 2023-05-19 TW TW113122028A patent/TWI901193B/en active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6824447B2 (en) * | 2001-07-03 | 2004-11-30 | Rodel Nitta Corporation | Perforated-transparent polishing pad |
| TW200408494A (en) * | 2002-11-19 | 2004-06-01 | Iv Technologies Co Ltd | Method of fabricating a polishing pad having a detection window thereon |
| TW200628262A (en) * | 2004-12-10 | 2006-08-16 | Toyo Tire & Rubber Co | Polishing pad |
| TW200824841A (en) * | 2006-07-03 | 2008-06-16 | Applied Materials Inc | Polishing pad with window having multiple portions |
| TW200806426A (en) * | 2006-07-28 | 2008-02-01 | Powerchip Semiconductor Corp | Polishing pad and fabrication method thereof |
| US20170092551A1 (en) * | 2006-10-31 | 2017-03-30 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
| TW201039981A (en) * | 2009-04-23 | 2010-11-16 | Applied Materials Inc | Treatment of polishing pad window |
| TW201121710A (en) * | 2009-12-31 | 2011-07-01 | Iv Technologies Co Ltd | Method of manufacturing polishing pad having detection window and polishing pad having detection window |
| TW201729940A (en) * | 2016-02-26 | 2017-09-01 | 應用材料股份有限公司 | Window in thin polishing pad |
| TW201912300A (en) * | 2017-08-22 | 2019-04-01 | 智勝科技股份有限公司 | Polishing pad, manufacturing method of a polishing pad and polishing method |
| JP2021053765A (en) * | 2019-09-30 | 2021-04-08 | 富士紡ホールディングス株式会社 | Polishing pad |
| CN113478382A (en) * | 2021-07-20 | 2021-10-08 | 湖北鼎汇微电子材料有限公司 | Detection window, chemical mechanical polishing pad and polishing system |
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