TWI816371B - Substrate and display device with partition wall - Google Patents
Substrate and display device with partition wall Download PDFInfo
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- TWI816371B TWI816371B TW111114933A TW111114933A TWI816371B TW I816371 B TWI816371 B TW I816371B TW 111114933 A TW111114933 A TW 111114933A TW 111114933 A TW111114933 A TW 111114933A TW I816371 B TWI816371 B TW I816371B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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Abstract
一種樹脂組成物,含有:樹脂;有機金屬化合物,含有選自由銀、金、鉑及鈀所組成的群組中的至少一種金屬;光聚合起始劑或醌二疊氮化合物;以及溶媒。本發明提供一種樹脂組成物,即便於250℃以下的加熱條件下,亦可形成兼具高反射率與高遮光性的隔離壁。A resin composition containing: a resin; an organic metal compound containing at least one metal selected from the group consisting of silver, gold, platinum and palladium; a photopolymerization initiator or a quinonediazide compound; and a solvent. The present invention provides a resin composition that can form a partition wall with both high reflectivity and high light-shielding properties even under heating conditions of 250° C. or below.
Description
本發明是有關於一種樹脂組成物、由樹脂組成物形成的遮光膜、遮光膜的製造方法及具有經圖案形成的隔離壁的帶隔離壁的基板。 The present invention relates to a resin composition, a light-shielding film formed from the resin composition, a method for manufacturing the light-shielding film, and a substrate with partition walls having patterned partition walls.
作為畫像顯示裝置的一種的液晶顯示裝置一般是使用發光二極體(light emitting diode,LED)等白色光源及選擇性透過紅色、綠色及藍色的彩色濾光片來進行彩色顯示。然而,此種使用彩色濾光片的彩色顯示存在光利用效率差且顏色再現性的課題。 Liquid crystal display devices, which are one type of image display devices, generally use white light sources such as light emitting diodes (LEDs) and color filters that selectively transmit red, green, and blue to perform color display. However, such color display using color filters has problems of poor light utilization efficiency and color reproducibility.
因此,作為提高了光利用效率的彩色顯示裝置,提出有包括包含波長變換用螢光體的波長變換部、偏光分離機構及偏光變換機構的彩色顯示裝置(例如參照專利文獻1)。例如提出有如下彩色顯示裝置,包括:藍色光源、液晶元件、以及波長變換部,所述波長變換部具有受藍色光激發而發出紅色的螢光的螢光體、受藍色光激發而發出綠色的螢光的螢光體、以及使藍色光散射的光散射層(例如參照專利文獻2)。 Therefore, as a color display device with improved light utilization efficiency, a color display device including a wavelength converting section including a wavelength converting phosphor, a polarization separation mechanism, and a polarization conversion mechanism has been proposed (for example, see Patent Document 1). For example, a color display device has been proposed that includes a blue light source, a liquid crystal element, and a wavelength converter including a phosphor that is excited by blue light and emits red phosphor, and a phosphor that is excited by blue light and emits green phosphor. A fluorescent phosphor and a light scattering layer that scatters blue light (for example, see Patent Document 2).
但是,包含如專利文獻1、專利文獻2所記載般的顏色變換螢光體的彩色濾光片由於在所有方向上產生螢光,因此光的取出效率低,亮度不充分。特別是被稱為4K、8K的高精細顯示裝置中,畫素尺寸變小,因而亮度的課題顯著,因此要求更高的亮度。
However, a color filter containing a color-converting phosphor as described in
[現有技術文獻] [Prior art documents]
[專利文獻] [Patent Document]
專利文獻1:日本專利特開2000-131683號公報 Patent Document 1: Japanese Patent Application Laid-Open No. 2000-131683
專利文獻2:日本專利特開2009-244383號公報 Patent Document 2: Japanese Patent Application Publication No. 2009-244383
專利文獻3:日本專利特開2000-347394號公報 Patent Document 3: Japanese Patent Application Laid-Open No. 2000-347394
專利文獻4:日本專利特開2006-259421號公報 Patent Document 4: Japanese Patent Application Publication No. 2006-259421
為了提高顯示裝置的亮度,有效的是提高隔開顏色變換螢光體的隔離壁的反射率。另外,為了於鄰接畫素間不發生光混色,需要提高隔離壁的遮光性。根據以上,要求兼具高反射率與遮光性的隔離壁材料。 In order to increase the brightness of the display device, it is effective to increase the reflectivity of the partition wall that separates the color-converting phosphors. In addition, in order to prevent light color mixing between adjacent pixels, the light-shielding property of the partition wall needs to be improved. Based on the above, there is a demand for partition wall materials that have both high reflectivity and light-shielding properties.
發明者等人為了形成兼具高反射率與遮光性的隔離壁,首先研究了使用在高反射率的白色隔離壁材料中添加了黑色顏料的材料的方法。但是,所述方法中,於曝光時光被白色顏料與黑色顏料吸收,光無法到達膜的底部,圖案加工性差的課題變得明確。 In order to form a partition wall with both high reflectivity and light-shielding properties, the inventors first studied a method of using a material in which a black pigment was added to a white partition wall material with high reflectivity. However, in this method, the light is absorbed by the white pigment and the black pigment during exposure, so that the light cannot reach the bottom of the film, and the problem of poor pattern processability becomes clear.
另一方面,如專利文獻3、專利文獻4所記載般,提出了藉由添加特定的金屬化合物而利用圖案形成後的煆燒進行黑色化的技術。然而,該些黑色化技術需要400℃以上的煆燒,存在藉由250℃以下的加熱而遮光性不提高的課題。
On the other hand, as described in
因此,本發明的目的在於提供一種樹脂組成物,即便於250℃以下的加熱條件下,亦可形成兼具高反射率與遮光性的隔離壁。 Therefore, an object of the present invention is to provide a resin composition that can form a partition wall having both high reflectivity and light-shielding properties even under heating conditions of 250° C. or lower.
本發明為一種樹脂組成物,含有:樹脂;有機金屬化合物,含有選自由銀、金、鉑及鈀所組成的群組中的至少一種金屬;光聚合起始劑或醌二疊氮化合物;以及溶媒。 The present invention is a resin composition containing: a resin; an organic metal compound containing at least one metal selected from the group consisting of silver, gold, platinum and palladium; a photopolymerization initiator or a quinonediazide compound; and solvent.
本發明的樹脂組成物於製膜後進行圖案曝光的步驟時使光透過,但由於在120℃以上且250℃以下的溫度下對曝光後的膜進行加熱後遮光性提高,因此即便於250℃以下的加熱條件下,亦可形成具有高反射率與高遮光性的微細厚膜隔離壁圖案。 The resin composition of the present invention transmits light during the step of pattern exposure after film formation. However, since the light-shielding property is improved by heating the exposed film at a temperature of 120°C or more and 250°C or less, even at 250°C Under the following heating conditions, a fine thick-film barrier pattern with high reflectivity and high light-shielding properties can also be formed.
1:基底基板 1: Base substrate
2:隔離壁 2:Separation wall
3:畫素 3: Pixel
3(CL-2):由顏色變換發光材料組成物(CL-2)形成的畫素 3(CL-2): Pixels formed from color-changing luminescent material composition (CL-2)
3(CL-3):由顏色變換發光材料組成物(CL-3)形成的畫素 3(CL-3): Pixel formed from color-changing luminescent material composition (CL-3)
4:低折射率層 4: Low refractive index layer
5:無機保護層I 5: Inorganic protective layer I
6:無機保護層II 6: Inorganic protective layer II
7:彩色濾光片 7: Color filter
8:無機保護層III及/或黃色有機保護層 8: Inorganic protective layer III and/or yellow organic protective layer
9:無機保護層IV及/或黃色有機保護層 9: Inorganic protective layer IV and/or yellow organic protective layer
10:遮光隔離壁 10:Light-shielding partition wall
11:藍色有機EL單元 11:Blue organic EL unit
H:隔離壁的厚度 H: Thickness of partition wall
L:隔離壁的寬度 L: width of partition wall
θ:錐角 θ: cone angle
圖1為表示具有經圖案形成的隔離壁的本發明的帶隔離壁的基板的一態樣的剖面圖。 FIG. 1 is a cross-sectional view showing an aspect of a substrate with partition walls according to the present invention having patterned partition walls.
圖2為表示具有經圖案形成的隔離壁與含有顏色變換發光材料的畫素的本發明的帶隔離壁的基板的一態樣的剖面圖。 2 is a cross-sectional view showing an aspect of a substrate with isolation walls of the present invention having patterned isolation walls and pixels containing a color-changing luminescent material.
圖3為表示具有低折射率層的本發明的帶隔離壁的基板的一態樣的剖面圖。 3 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a low refractive index layer.
圖4為表示具有低折射率層及無機保護層I的本發明的帶隔離壁的基板的一態樣的剖面圖。 4 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a low refractive index layer and an inorganic protective layer I.
圖5為表示具有低折射率層及無機保護層II的本發明的帶隔離壁的基板的一態樣的剖面圖。 5 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a low refractive index layer and an inorganic protective layer II.
圖6為表示具有彩色濾光片的本發明的帶隔離壁的基板的一 態樣的剖面圖。 FIG. 6 is a diagram showing a substrate with partition walls according to the present invention having a color filter; A cross-sectional view of the shape.
圖7為表示具有彩色濾光片、無機保護層III及/或黃色有機保護層的本發明的帶隔離壁的基板的一態樣的剖面圖。 7 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a color filter, an inorganic protective layer III and/or a yellow organic protective layer.
圖8為表示具有彩色濾光片、無機保護層IV及/或黃色有機保護層的本發明的帶隔離壁的基板的一態樣的剖面圖。 8 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a color filter, an inorganic protective layer IV and/or a yellow organic protective layer.
圖9為表示具有遮光隔離壁的本發明的帶隔離壁的基板的一態樣的剖面圖。 9 is a cross-sectional view showing an aspect of the partition-walled substrate of the present invention having a light-shielding partition wall.
圖10為表示實施例中用於混色評價的顯示裝置的構成的剖面圖。 10 is a cross-sectional view showing the structure of a display device used for color mixture evaluation in the embodiment.
以下,具體說明本發明的樹脂組成物、由樹脂組成物形成的遮光膜、遮光膜的製造方法及帶隔離壁的基板的較佳實施方式,但本發明不限定於以下的實施方式,可根據目的或用途進行各種變更來實施。 Hereinafter, preferred embodiments of the resin composition, the light-shielding film formed from the resin composition, the light-shielding film manufacturing method, and the substrate with partition walls of the present invention are specifically described. However, the present invention is not limited to the following embodiments. Various changes can be made to the purpose or use.
本發明的樹脂組成物可較佳地用作用於形成隔開顏色變換螢光體的隔離壁的材料。本發明的樹脂組成物較佳為含有:樹脂;有機金屬化合物,含有選自由銀、金、鉑及鈀所組成的群組中的至少一種金屬(以下,有時記載為「有機金屬化合物」);光聚合起始劑或醌二疊氮化合物;以及溶媒。 The resin composition of the present invention can be preferably used as a material for forming partition walls that separate color-changing phosphors. The resin composition of the present invention preferably contains: a resin; an organic metal compound containing at least one metal selected from the group consisting of silver, gold, platinum, and palladium (hereinafter, may be described as "organometallic compound") ; Photopolymerization initiator or quinonediazide compound; and solvent.
樹脂具有提高隔離壁的耐裂紋性及耐光性的功能。就提高熱處理中的隔離壁的耐裂紋性的觀點而言,樹脂於樹脂組成物的固體成分中所佔的含量較佳為10重量%以上,更佳為20重量%以 上。另一方面,就提高耐光性的觀點而言,樹脂於樹脂組成物的固體成分中所佔的含量較佳為60重量%以下,更佳為50重量%以下。此處,所謂固體成分,是指於樹脂組成物中含有的成分中,去除溶媒等揮發性成分後的全部成分。固體成分的量可藉由測定對樹脂組成物進行加熱而使揮發性成分蒸發後的剩餘成分來求出。 Resin has the function of improving the crack resistance and light resistance of the partition wall. From the viewpoint of improving the crack resistance of the partition wall during heat treatment, the content of the resin in the solid content of the resin composition is preferably 10% by weight or more, more preferably 20% by weight or more. superior. On the other hand, from the viewpoint of improving light resistance, the content of the resin in the solid content of the resin composition is preferably 60% by weight or less, more preferably 50% by weight or less. Here, the solid content refers to all the components contained in the resin composition excluding volatile components such as solvents. The amount of solid content can be determined by measuring the remaining components after heating the resin composition to evaporate the volatile components.
作為樹脂,例如可列舉聚矽氧烷、聚醯亞胺、聚醯亞胺前驅物、聚苯並噁唑、聚苯並噁唑前驅物、(甲基)丙烯酸聚合物等。此處,所謂(甲基)丙烯酸聚合物,是指甲基丙烯酸酯及/或丙烯酸酯的聚合物。亦可含有兩種以上該些化合物。該些中,就透明性、耐熱性及耐光性優異的方面而言,較佳為聚矽氧烷。 Examples of the resin include polysiloxane, polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, (meth)acrylic acid polymer, and the like. Here, the (meth)acrylic polymer refers to a polymer of methacrylate and/or acrylate. Two or more of these compounds may be contained. Among these, polysiloxane is preferred in terms of excellent transparency, heat resistance, and light resistance.
聚矽氧烷是有機矽烷的水解.脫水縮合物。於本發明的樹脂組成物具有負型感光性的情況下,聚矽氧烷較佳為至少含有下述通式(2)所表示的重覆單元。亦可進一步含有其他重覆單元。藉由含有通式(2)所表示的源自二官能烷氧基矽烷化合物的重覆單元,可抑制由加熱引起的聚矽氧烷的過度的熱聚合(縮合),可提高隔離壁的耐裂紋性。於聚矽氧烷中的全部重覆單元中,較佳為含有10莫耳%~80莫耳%的通式(2)所表示的重覆單元。藉由含有10莫耳%以上的通式(2)所表示的重覆單元,可進一步提高耐裂紋性。通式(2)所表示的重覆單元的含量更佳為15莫耳%以上,進而佳為20莫耳%以上。另一方面,藉由含有80莫耳%以下的通式(2)所表示的重覆單元,可於聚合時充分提高聚矽氧烷的分子量,提高塗佈性。通式(2)所表示的重覆單元的含量更佳為70莫 耳%以下。 Polysiloxane is the hydrolysis of organosilane. Dehydration condensate. When the resin composition of the present invention has negative photosensitivity, the polysiloxane preferably contains at least a repeating unit represented by the following general formula (2). Other repeating units may also be further included. By containing a repeating unit derived from a bifunctional alkoxysilane compound represented by general formula (2), excessive thermal polymerization (condensation) of polysiloxane caused by heating can be suppressed, and the resistance of the partition wall can be improved. Crackability. Among all the repeating units in the polysiloxane, it is preferable to contain 10 mol% to 80 mol% of the repeating units represented by the general formula (2). By containing 10 mol% or more of the repeating unit represented by the general formula (2), the crack resistance can be further improved. The content of the repeating unit represented by the general formula (2) is more preferably 15 mol% or more, further preferably 20 mol% or more. On the other hand, by containing 80 mol% or less of the repeating unit represented by the general formula (2), the molecular weight of the polysiloxane can be sufficiently increased during polymerization, thereby improving the coatability. The content of the repeating unit represented by the general formula (2) is preferably 70 mol Ear% or less.
所述通式(2)中,R1及R2分別可相同亦可不同,表示碳數1~20的一價有機基。就使聚合時的聚矽氧烷的分子量調整容易的觀點而言,R1及R2較佳為選自碳數1~6的烷基及碳數6~12的芳基中的基。其中,烷基及芳基的氫的至少一部分可被自由基聚合性基取代。該情況下,於負型感光性樹脂組成物的硬化物中,自由基聚合性基可進行自由基聚合。 In the general formula (2), R 1 and R 2 may be the same or different, respectively, and represent a monovalent organic group having 1 to 20 carbon atoms. From the viewpoint of making it easy to adjust the molecular weight of polysiloxane during polymerization, R 1 and R 2 are preferably groups selected from an alkyl group having 1 to 6 carbon atoms and an aryl group having 6 to 12 carbon atoms. Among them, at least part of the hydrogens of the alkyl group and the aryl group may be substituted with a radically polymerizable group. In this case, in the cured material of the negative photosensitive resin composition, radical polymerizable groups can undergo radical polymerization.
於本發明的樹脂組成物具有負型感光性的情況下,聚矽氧烷較佳為進一步含有選自下述通式(3)所表示的重覆單元及下述通式(4)所表示的重覆單元中的重覆單元。藉由含有通式(3)或通式(4)所表示的源自含氟烷氧基矽烷化合物的重覆單元,可減少聚矽氧烷的折射率,於含有後述的白色顏料的情況下,可擴大與白色顏料的折射率差,進一步提高界面反射,進一步提高反射率。更佳為於聚矽氧烷中含有合計20莫耳%~80莫耳%的選自通式(3)所表示的重覆單元及通式(4)所表示的重覆單元中的重覆單元。藉由含有合計20莫耳%以上的通式(3)所表示的重覆單元與通式(4)所表示的重覆單元,於含有後述的白色顏料的情況下,可進 一步提高聚矽氧烷與白色顏料的界面反射,進一步提高反射率。通式(3)所表示的重覆單元與通式(4)所表示的重覆單元的合計含量更佳為40莫耳%以上。另一方面,藉由含有合計80莫耳%以下的通式(3)所表示的重覆單元與通式(4)所表示的重覆單元,可抑制聚矽氧烷的過度疏水化,提高與組成物中的其他成分的相容性,提高解析度。通式(3)所表示的重覆單元與通式(4)所表示的重覆單元的合計含量更佳為70莫耳%以下。亦可進一步含有其他重覆單元。 When the resin composition of the present invention has negative photosensitivity, the polysiloxane preferably further contains a repeating unit selected from the group consisting of a repeating unit represented by the following general formula (3) and a unit represented by the following general formula (4) a repeating unit within a repeating unit. By containing a repeating unit derived from a fluorine-containing alkoxysilane compound represented by the general formula (3) or the general formula (4), the refractive index of the polysiloxane can be reduced. When a white pigment described below is contained , can expand the refractive index difference with white pigments, further improve interface reflection, and further increase reflectivity. More preferably, the polysiloxane contains a total of 20 mol% to 80 mol% of repeating units selected from the group consisting of repeating units represented by general formula (3) and repeating units represented by general formula (4). unit. By containing a repeating unit represented by the general formula (3) and a repeating unit represented by the general formula (4) at a total of 20 mol% or more, when the white pigment described below is contained, it can be carried out Step by step to improve the interface reflection between polysiloxane and white pigment, further increasing the reflectivity. The total content of the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) is more preferably 40 mol% or more. On the other hand, by containing a total of 80 mol% or less of the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4), excessive hydrophobization of the polysiloxane can be suppressed, thereby improving the Compatibility with other ingredients in the composition to improve resolution. The total content of the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) is more preferably 70 mol% or less. Other repeating units may also be further included.
所述通式(3)及(4)中,R3表示氫的全部或一部分經氟取代而成的碳數1~10的烷基、烯基、芳基或芳烷基。R4表示單鍵、-O-、-CH2-CO-、-CO-或-O-CO-。R5表示碳數1~20的一價有機基。就進一步減少聚矽氧烷的折射率的觀點而言,R3較佳為氫的全部或一部分經氟取代而成的碳數1~6的烷基。再者,於負型感光性樹脂組成物的光硬化物中,烯基亦可進行自由基聚合。 In the general formulas (3) and (4), R 3 represents an alkyl group, alkenyl group, aryl group or aralkyl group having 1 to 10 carbon atoms in which all or part of hydrogen is substituted with fluorine. R 4 represents a single bond, -O-, -CH 2 -CO-, -CO- or -O-CO-. R 5 represents a monovalent organic group having 1 to 20 carbon atoms. From the viewpoint of further reducing the refractive index of polysiloxane, R 3 is preferably an alkyl group having 1 to 6 carbon atoms in which all or part of hydrogen is substituted with fluorine. Furthermore, in the photocured product of the negative photosensitive resin composition, the alkenyl group may undergo radical polymerization.
所述通式(2)~(4)所表示的重覆單元分別源自下述通式(5)~(7)所表示的烷氧基矽烷化合物。即,包含所述通式(2)~(4)所表示的重覆單元的聚矽氧烷可藉由對包含下述通式(5) ~(7)所表示的烷氧基矽烷化合物的烷氧基矽烷化合物進行水解及縮聚而獲得。進而亦可使用其他烷氧基矽烷化合物。 The repeating units represented by the general formulas (2) to (4) are respectively derived from alkoxysilane compounds represented by the following general formulas (5) to (7). That is, the polysiloxane containing the repeating units represented by the general formulas (2) to (4) can be obtained by converting the polysiloxane containing the following general formula (5) The alkoxysilane compound represented by ~(7) is obtained by subjecting the alkoxysilane compound to hydrolysis and polycondensation. Furthermore, other alkoxysilane compounds can also be used.
所述通式(5)~(7)中,R1~R5分別表示與通式(2)~(4)中的R1~R5相同的基。R6可相同亦可不同,表示碳數1~20的一價有機基,較佳為碳數1~6的烷基。 In the general formulas (5) to (7), R 1 to R 5 respectively represent the same groups as R 1 to R 5 in the general formulas (2) to (4). R 6 may be the same or different, and represents a monovalent organic group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 6 carbon atoms.
作為通式(5)所表示的烷氧基矽烷化合物,例如可列舉:二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、乙基甲基二甲氧基矽烷、甲基丙基二甲氧基矽烷、甲基丙基二乙氧基矽烷、二苯基二甲氧基矽烷、二苯基二乙氧基矽烷、環己基甲基二甲氧基矽烷、環己基甲基二乙氧基矽烷、乙烯基甲基二甲氧基矽烷、乙烯基甲基二乙氧基矽烷、烯丙基甲基二甲氧基矽烷、烯丙基甲基二乙氧基矽烷、苯乙烯基甲基二甲氧基矽烷、苯乙烯基甲基二乙氧基矽烷、γ-甲基丙烯醯基丙基甲基二甲氧基矽烷、γ-甲基丙烯醯基丙基甲基二乙氧基矽烷、γ-丙烯醯基丙基甲基二甲氧基矽烷、γ-丙烯醯基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、3-縮水甘 油氧基丙基甲基二乙氧基矽烷、2-(3,4-環氧基環己基)乙基甲基二甲氧基矽烷、2-(3,4-環氧基環己基)乙基乙基二甲氧基矽烷、3-二甲基甲氧基矽烷基丙基丁二酸酐、3-二甲基乙氧基矽烷基丙基丁二酸酐、3-二甲基甲氧基矽烷基丙酸、3-二甲基乙氧基矽烷基丙酸、3-二甲基甲氧基矽烷基丙基環己基二羧酸酐、3-二甲基乙氧基矽烷基丙基環己基二羧酸酐、5-二甲基甲氧基矽烷基戊酸、5-二甲基乙氧基矽烷基戊酸、3-二甲基甲氧基矽烷基丙基鄰苯二甲酸酐、3-二甲基乙氧基矽烷基丙基鄰苯二甲酸酐、4-二甲基甲氧基矽烷基丁酸、4-二甲基乙氧基矽烷基丁酸等。亦可使用兩種以上該些化合物。 Examples of the alkoxysilane compound represented by the general formula (5) include dimethyldimethoxysilane, dimethyldiethoxysilane, ethylmethyldimethoxysilane, and methylpropane. Dimethoxysilane, methylpropyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, cyclohexylmethyldimethoxysilane, cyclohexylmethyldimethoxysilane Ethoxysilane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, allylmethyldimethoxysilane, allylmethyldiethoxysilane, styryl Methyl dimethoxysilane, styrylmethyl diethoxysilane, γ-methacrylylpropylmethyldimethoxysilane, γ-methacrylylpropylmethyldiethoxysilane silane, γ-acrylylpropylmethyldimethoxysilane, γ-acrylylpropylmethyldiethoxysilane, 3-glycidyloxypropylmethyldimethoxysilane, 3 - Glycidol Oloxypropylmethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethylmethyldimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyl Ethyldimethoxysilane, 3-dimethylmethoxysilylpropylsuccinic anhydride, 3-dimethylethoxysilylpropylsuccinic anhydride, 3-dimethylmethoxysilane propionic acid, 3-dimethylethoxysilylpropionic acid, 3-dimethylmethoxysilylpropylcyclohexyldicarboxylic anhydride, 3-dimethylethoxysilylpropylcyclohexyldi Carboxylic anhydride, 5-dimethylmethoxysilylvaleric acid, 5-dimethylethoxysilylvaleric acid, 3-dimethylmethoxysilylpropylphthalic anhydride, 3-dimethyl Methylethoxysilylpropylphthalic anhydride, 4-dimethylmethoxysilylbutyric acid, 4-dimethylethoxysilylbutyric acid, etc. Two or more of these compounds may also be used.
作為通式(6)所表示的烷氧基矽烷化合物,例如可列舉:三氟丙基三甲氧基矽烷、三氟丙基三乙氧基矽烷、全氟戊基三甲氧基矽烷、全氟戊基三乙氧基矽烷、十三氟辛基三甲氧基矽烷、十三氟辛基三乙氧基矽烷、十三氟辛基三丙氧基矽烷、十三氟辛基三異丙氧基矽烷、十七氟癸基三甲氧基矽烷、十七氟癸基三乙氧基矽烷等。亦可使用兩種以上該些化合物。 Examples of the alkoxysilane compound represented by the general formula (6) include: trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, perfluoropentyltrimethoxysilane, and perfluoropentyl triethoxysilane, tridecafluorooctyltrimethoxysilane, tridecafluorooctyltriethoxysilane, tridecafluorooctyltripropoxysilane, tridecafluorooctyltriisopropoxysilane , Heptadecafluorodecyltrimethoxysilane, heptadecafluorodecyltriethoxysilane, etc. Two or more of these compounds may also be used.
作為通式(7)所表示的烷氧基矽烷化合物,可列舉:雙(三氟甲基)二甲氧基矽烷、雙(三氟丙基)二甲氧基矽烷、雙(三氟丙基)二乙氧基矽烷、三氟丙基甲基二甲氧基矽烷、三氟丙基甲基二乙氧基矽烷、三氟丙基乙基二甲氧基矽烷、三氟丙基乙基二乙氧基矽烷、十七氟癸基甲基二甲氧基矽烷等。亦可使用兩種以上該些化合物。 Examples of the alkoxysilane compound represented by general formula (7) include bis(trifluoromethyl)dimethoxysilane, bis(trifluoropropyl)dimethoxysilane, and bis(trifluoropropyl)dimethoxysilane. )Diethoxysilane, trifluoropropylmethyldimethoxysilane, trifluoropropylmethyldiethoxysilane, trifluoropropylethyldimethoxysilane, trifluoropropylethyldimethoxysilane Ethoxysilane, heptadecafluorodecylmethyldimethoxysilane, etc. Two or more of these compounds may also be used.
作為其他烷氧基矽烷化合物,例如可列舉:甲基三甲氧基 矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、異丁基三甲氧基矽烷、異丁基三乙氧基矽烷、環己基三甲氧基矽烷、環己基三乙氧基矽烷、3-異氰酸酯丙基三甲氧基矽烷、3-異氰酸酯丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-脲基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷等三官能烷氧基矽烷化合物;四甲氧基矽烷、四乙氧基矽烷、矽酸酯51(四乙氧基矽烷寡聚物)等四官能烷氧基矽烷化合物;三甲基甲氧基矽烷、三苯基甲氧基矽烷等單官能烷氧基矽烷化合物;3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基三乙氧基矽烷、3-乙基-3-{[3-(三甲氧基矽烷基)丙氧基]甲基}氧雜環丁烷、3-乙基-3-{[3-(三乙氧基矽烷基)丙氧基]甲基}氧雜環丁烷等含有環氧基或氧雜環丁烷基的烷氧基矽烷化合物;苯基三甲氧基矽烷、苯基三乙氧基矽烷、1-萘基三甲氧基矽烷、2-萘基三甲氧基矽烷、甲苯基三甲氧基矽烷、甲苯基三乙氧基矽烷、1-苯基乙基三甲氧基矽烷、1-苯基乙基三乙氧基矽烷、2-苯基乙基三甲氧基矽烷、2-苯基乙基三乙氧基矽烷、3-三甲氧基矽烷基丙基鄰苯二甲酸酐、3-三乙氧基矽烷基丙基鄰苯二甲酸酐等含芳香環的烷氧基矽烷化合物;苯乙烯基三甲氧基矽烷、苯乙烯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、烯丙基三甲氧基矽烷、烯丙基三乙氧基矽烷、γ-丙烯醯基丙基三甲氧基矽烷、γ-丙烯醯基丙基三乙氧基矽烷、γ- 甲基丙烯醯基丙基三甲氧基矽烷、γ-甲基丙烯醯基丙基三乙氧基矽烷等含自由基聚合性基的烷氧基矽烷化合物;3-三甲氧基矽烷基丙酸、3-三乙氧基矽烷基丙酸、4-三甲氧基矽烷基丁酸、4-三乙氧基矽烷基丁酸、5-三甲氧基矽烷基戊酸、5-三乙氧基矽烷基戊酸、3-三甲氧基矽烷基丙基丁二酸酐、3-三乙氧基矽烷基丙基丁二酸酐、3-三甲氧基矽烷基丙基環己基二羧酸酐、3-三乙氧基矽烷基丙基環己基二羧酸酐、3-三甲氧基矽烷基丙基鄰苯二甲酸酐、3-三乙氧基矽烷基丙基鄰苯二甲酸酐等含羧基的烷氧基矽烷化合物等。 Examples of other alkoxysilane compounds include: methyltrimethoxy Silane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, propyltrimethoxysilane, propyltriethoxysilane, isobutyltrimethoxysilane, isobutyl Triethoxysilane, cyclohexyltrimethoxysilane, cyclohexyltriethoxysilane, 3-isocyanatopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-aminopropyltrimethyl Oxysilane, 3-aminopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane and other trifunctional alkoxysilane compounds; tetramethoxysilane Tetrafunctional alkoxysilane compounds such as silane, tetraethoxysilane, and silicate 51 (tetraethoxysilane oligomer); monofunctional silane compounds such as trimethylmethoxysilane and triphenylmethoxysilane Alkoxysilane compounds; 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxy silane, 2-(3,4-epoxycyclohexyl)ethyltriethoxysilane, 3-ethyl-3-{[3-(trimethoxysilyl)propoxy]methyl}oxy Hetetane, 3-ethyl-3-{[3-(triethoxysilyl)propoxy]methyl}oxetane and other alkanes containing epoxy or oxetanyl groups Oxysilane compounds; phenyltrimethoxysilane, phenyltriethoxysilane, 1-naphthyltrimethoxysilane, 2-naphthyltrimethoxysilane, tolyltrimethoxysilane, tolyltriethoxy Silane, 1-phenylethyltrimethoxysilane, 1-phenylethyltriethoxysilane, 2-phenylethyltrimethoxysilane, 2-phenylethyltriethoxysilane, 3 - Alkoxysilane compounds containing aromatic rings such as trimethoxysilylpropyl phthalic anhydride and 3-triethoxysilylpropyl phthalic anhydride; styryltrimethoxysilane, styrene Triethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, γ-acrylylpropyltrimethoxysilane , γ-acrylylpropyltriethoxysilane, γ- Methacrylylpropyltrimethoxysilane, γ-methacrylpropyltriethoxysilane and other alkoxysilane compounds containing free radical polymerizable groups; 3-trimethoxysilylpropionic acid, 3-triethoxysilylpropionic acid, 4-trimethoxysilylbutyric acid, 4-triethoxysilylbutyric acid, 5-trimethoxysilylvaleric acid, 5-triethoxysilylbutyric acid Valeric acid, 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylpropylsuccinic anhydride, 3-trimethoxysilylpropylcyclohexyldicarboxylic anhydride, 3-triethoxy Alkoxysilane compounds containing carboxyl groups such as silylpropylcyclohexyldicarboxylic anhydride, 3-trimethoxysilylpropylphthalic anhydride, and 3-triethoxysilylpropylphthalic anhydride. wait.
就使聚矽氧烷的所有重覆單元中的通式(2)所表示的重覆單元的含量為所述範圍內的觀點而言,作為聚矽氧烷的原料的烷氧基矽烷化合物中的、通式(5)所表示的烷氧基矽烷化合物的含量較佳為10莫耳%以上,更佳為15莫耳%以上,進而佳為20莫耳%以上。另一方面,就同樣的觀點而言,通式(5)所表示的烷氧基矽烷化合物的含量較佳為80莫耳%以下,更佳為70莫耳%以下。另外,關於通式(6)及通式(7)所表示的烷氧基矽烷化合物的合計含量,就使通式(3)及通式(4)所表示的重覆單元的合計含量為所述範圍內的觀點而言,較佳為20莫耳%以上,更佳為40莫耳%以上。另一方面,就同樣的觀點而言,通式(6)及通式(7)所表示的烷氧基矽烷化合物的合計含量較佳為80莫耳%以下,更佳為70莫耳%以下。 From the viewpoint of making the content of the repeating unit represented by the general formula (2) in all the repeating units of the polysiloxane fall within the above range, in the alkoxysilane compound that is the raw material of the polysiloxane, The content of the alkoxysilane compound represented by the general formula (5) is preferably 10 mol% or more, more preferably 15 mol% or more, and still more preferably 20 mol% or more. On the other hand, from the same viewpoint, the content of the alkoxysilane compound represented by the general formula (5) is preferably 80 mol% or less, more preferably 70 mol% or less. In addition, regarding the total content of the alkoxysilane compound represented by the general formula (6) and the general formula (7), the total content of the repeating units represented by the general formula (3) and the general formula (4) is From the viewpoint of being within the above range, it is preferably 20 mol% or more, and more preferably 40 mol% or more. On the other hand, from the same viewpoint, the total content of the alkoxysilane compound represented by the general formula (6) and the general formula (7) is preferably 80 mol% or less, more preferably 70 mol% or less. .
就塗佈性的觀點而言,聚矽氧烷的重量平均分子量(Mw)較佳為1,000以上,更佳為2,000以上。另一方面,就顯影性的觀 點而言,聚矽氧烷的Mw較佳為50,000以下,更佳為20,000以下。此處,所謂本發明中的聚矽氧烷的Mw是指利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)測定而得的聚苯乙烯換算值。 From the viewpoint of coatability, the weight average molecular weight (Mw) of polysiloxane is preferably 1,000 or more, more preferably 2,000 or more. On the other hand, from the perspective of developability Specifically speaking, the Mw of polysiloxane is preferably 50,000 or less, more preferably 20,000 or less. Here, the Mw of polysiloxane in the present invention refers to a polystyrene-converted value measured by gel permeation chromatography (GPC).
聚矽氧烷可藉由如下方式而獲得:於將所述有機矽烷化合物水解後,使該水解物於溶媒的存在下或無溶媒下進行脫水縮合反應。 Polysiloxane can be obtained by hydrolyzing the organosilane compound and subjecting the hydrolyzate to a dehydration condensation reaction in the presence of a solvent or in the absence of a solvent.
水解的各種條件可考慮反應規模、反應容器的大小、形狀等,根據適合於目標用途的物性設定。作為各種條件,例如可列舉氧濃度、反應溫度、反應時間等。 Various conditions for hydrolysis can be set based on physical properties suitable for the intended use, taking into account the reaction scale, the size and shape of the reaction vessel, etc. Examples of various conditions include oxygen concentration, reaction temperature, reaction time, and the like.
水解反應中可使用鹽酸、乙酸、甲酸、硝酸、草酸、硫酸、磷酸、聚磷酸、多元羧酸或其酐、離子交換樹脂等酸觸媒。該些中,較佳為包含選自甲酸、乙酸及磷酸中的酸的酸性水溶液。 Acid catalysts such as hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polycarboxylic acid or its anhydride, and ion exchange resin can be used in the hydrolysis reaction. Among these, an acidic aqueous solution containing an acid selected from formic acid, acetic acid and phosphoric acid is preferred.
於在水解反應中使用酸觸媒的情況下,就使水解更迅速地進行的觀點而言,相對於水解反應中使用的所有烷氧基矽烷化合物100重量份,酸觸媒的添加量較佳為0.05重量份以上,更佳為0.1重量份以上。另一方面,就適度地調整水解反應的進行的觀點而言,相對於所有烷氧基矽烷化合物100重量份,酸觸媒的添加量較佳為20重量份以下,更佳為10重量份以下。此處,所謂所有烷氧基矽烷化合物量,是指包含烷氧基矽烷化合物、其水解物及其縮合物全部的量。以下相同。 When an acid catalyst is used in the hydrolysis reaction, from the viewpoint of making the hydrolysis proceed more quickly, the amount of the acid catalyst added is preferably based on 100 parts by weight of all the alkoxysilane compounds used in the hydrolysis reaction. It is 0.05 part by weight or more, and more preferably it is 0.1 part by weight or more. On the other hand, from the viewpoint of appropriately adjusting the progress of the hydrolysis reaction, the amount of the acid catalyst added is preferably 20 parts by weight or less, more preferably 10 parts by weight or less based on 100 parts by weight of all the alkoxysilane compounds. . Here, the total amount of the alkoxysilane compound refers to the amount including all the alkoxysilane compounds, their hydrolysates and their condensates. Same as below.
水解反應可於溶媒中進行。可考慮樹脂組成物的穩定性、 潤濕性、揮發性等適宜選擇溶媒。 The hydrolysis reaction can be carried out in a solvent. Consider the stability of the resin composition, The solvent should be selected based on its wettability and volatility.
於藉由水解反應而生成溶媒的情況下,亦可在無溶媒下進行水解。於在樹脂組成物中使用的情況下,亦較佳為於水解反應結束後進一步添加溶媒,藉此將樹脂組成物調整為適當的濃度。另外,亦可於水解後藉由加熱及/或減壓下將生成醇等的總量或一部分餾出、去除,然後添加合適的溶媒。 When a solvent is generated by a hydrolysis reaction, hydrolysis may be performed without a solvent. When used in a resin composition, it is also preferable to further add a solvent after the hydrolysis reaction is completed, thereby adjusting the resin composition to an appropriate concentration. In addition, after hydrolysis, the total amount or a part of the alcohol etc. produced can also be distilled off and removed by heating and/or under reduced pressure, and then a suitable solvent can be added.
於在水解反應中使用溶媒的情況下,就抑制凝膠的生成的觀點而言,相對於所有烷氧基矽烷化合物100重量份,溶媒的添加量較佳為50重量份以上,更佳為80重量份以上。另一方面,就使水解更迅速地進行的觀點而言,相對於所有烷氧基矽烷化合物100重量份,溶媒的添加量較佳為500重量份以下,更佳為200重量份以下。 When a solvent is used in the hydrolysis reaction, from the viewpoint of suppressing the formation of gel, the amount of the solvent added is preferably 50 parts by weight or more, more preferably 80 parts by weight, based on 100 parts by weight of all the alkoxysilane compounds. parts by weight or more. On the other hand, from the viewpoint of making hydrolysis proceed more quickly, the added amount of the solvent is preferably 500 parts by weight or less, more preferably 200 parts by weight or less based on 100 parts by weight of all the alkoxysilane compounds.
另外,水解反應中使用的水較佳為離子交換水。水的量可任意設定,相對於所有烷氧基矽烷化合物1莫耳,較佳為1.0莫耳~4.0莫耳。 In addition, the water used in the hydrolysis reaction is preferably ion-exchange water. The amount of water can be set arbitrarily, but is preferably 1.0 mol to 4.0 mol relative to 1 mol of all alkoxysilane compounds.
作為脫水縮合反應的方法,例如可列舉對藉由有機矽烷化合物的水解反應而獲得的矽烷醇化合物溶液直接進行加熱的方法等。加熱溫度較佳為50℃以上且溶媒的沸點以下,加熱時間較佳為1小時~100小時。另外,為了提高聚矽氧烷的聚合度,亦可進行再加熱或鹼觸媒的添加。另外,亦可根據目的於脫水縮合反應後,於加熱及/或減壓下餾出、去除適量的生成醇等,其後添加合適的溶媒。 Examples of the dehydration condensation reaction method include a method of directly heating a silanol compound solution obtained by a hydrolysis reaction of an organosilane compound. The heating temperature is preferably above 50°C and below the boiling point of the solvent, and the heating time is preferably between 1 hour and 100 hours. In addition, in order to increase the degree of polymerization of polysiloxane, reheating or the addition of an alkali catalyst can also be performed. In addition, according to the purpose, after the dehydration and condensation reaction, an appropriate amount of the generated alcohol, etc. may be distilled off under heating and/or reduced pressure, and then a suitable solvent may be added.
就樹脂組成物的保存穩定性的觀點而言,較佳為水解、脫水縮合後的聚矽氧烷溶液中不含所述觸媒,可視需要而進行觸媒的去除。就操作的簡便性及去除性的觀點而言,作為觸媒去除方法,較佳為水清洗、利用離子交換樹脂的處理等。所謂水清洗是指以適當的疏水性溶媒將聚矽氧烷溶液稀釋,以水清洗數次後,利用蒸發器等將所獲得的有機層濃縮的方法。所謂利用離子交換樹脂的處理是指使聚矽氧烷溶液與適當的離子交換樹脂接觸的方法。 From the viewpoint of the storage stability of the resin composition, it is preferable that the polysiloxane solution after hydrolysis and dehydration condensation does not contain the catalyst, and the catalyst may be removed if necessary. From the viewpoint of ease of operation and removability, water washing, treatment with an ion exchange resin, etc. are preferred as the catalyst removal method. The so-called water washing refers to a method of diluting the polysiloxane solution with an appropriate hydrophobic solvent, washing it with water several times, and then concentrating the obtained organic layer using an evaporator or the like. Treatment with an ion exchange resin refers to a method of bringing a polysiloxane solution into contact with an appropriate ion exchange resin.
有機金屬化合物於後述的隔離壁(A-1)的圖案形成時,在曝光步驟及/或加熱步驟中藉由分解.凝聚而成為黑色粒子或黃色粒子,具有提高後述的隔離壁(A-1)的光學密度(optical density,OD)值的功能。由於曝光前OD值低,圖案形成後OD值上升,因此在曝光步驟中可使曝光後的光充分透過至底部,進行光硬化或光分解。例如於具有負型感光性的樹脂組成物的情況下,若為了形成OD值高的隔離壁(A-1)而預先使用含有大量黑色顏料的樹脂組成物進行圖案形成,則底部的光硬化容易變得不充分。其結果,存在所得的隔離壁(A-1)的形狀容易成為倒錐形的傾向。若使用含有所述有機金屬化合物的本發明的樹脂組成物進行圖案形成,則可充分地光硬化至底部,因此可容易地使錐角為後述的較佳的範圍內。 The organic metal compound is decomposed during the exposure step and/or the heating step when forming the pattern of the partition wall (A-1) described below. The particles aggregate to form black particles or yellow particles and have the function of increasing the optical density (OD) value of the partition wall (A-1) described below. Since the OD value is low before exposure and increases after pattern formation, the post-exposure light can be fully transmitted to the bottom during the exposure step for photohardening or photodecomposition. For example, in the case of a resin composition having negative photosensitivity, if a resin composition containing a large amount of black pigment is used for pattern formation in advance in order to form the partition wall (A-1) with a high OD value, the photocuring of the bottom will be easy become inadequate. As a result, the shape of the resulting partition wall (A-1) tends to become an inverse taper. If the resin composition of the present invention containing the organic metal compound is used for pattern formation, it can be sufficiently photocured to the bottom, so the taper angle can be easily set within a preferable range described below.
作為有機金屬化合物,例如可列舉:新癸酸銀、辛酸銀、水楊酸銀等含有銀的有機金屬化合物;氯(三苯基膦)金、四氯金酸四水合物等含有金的有機金屬化合物;雙(乙醯丙酮)鉑、二氯雙(三 苯基膦)鉑、二氯雙(苄腈)鉑等含有鉑的有機金屬化合物;雙(乙醯丙酮)鈀、二氯雙(三苯基膦)鈀、二氯雙(苄腈)鈀、四(三苯基膦)鈀、二亞苄基丙酮鈀等含有鈀的有機金屬化合物等。亦可含有兩種以上該些化合物。 Examples of the organic metal compounds include silver-containing organic metal compounds such as silver neodecanoate, silver octoate, and silver salicylate; gold-containing organic metal compounds such as chloro(triphenylphosphine)gold and tetrachloroauric acid tetrahydrate. Metal compounds; bis(acetylacetone)platinum, dichlorobis(trifluoroethylene) Phenylphosphine) platinum, dichlorobis(benzonitrile) platinum and other organic metal compounds containing platinum; bis(acetyl acetone) palladium, dichlorobis(triphenylphosphine) palladium, dichlorobis(benzonitrile) palladium, Organic metal compounds containing palladium such as tetrakis(triphenylphosphine)palladium, dibenzylideneacetone palladium, etc. Two or more of these compounds may be contained.
該些中,若含有新癸酸銀、辛酸銀、水楊酸銀等含有銀的有機金屬化合物,則於曝光步驟中藉由分解.凝聚而黑色化,於其後的加熱步驟中藉由進一步分解.凝聚而黃色化。 Among them, if they contain organic metal compounds containing silver such as silver neodecanoate, silver octoate, silver salicylate, etc., they will be decomposed during the exposure step. It condenses and turns black, and is further decomposed in the subsequent heating step. Condensed and yellowed.
另一方面,若含有雙(乙醯丙酮)鉑、二氯雙(三苯基膦)鉑、二氯雙(苄腈)鉑等含有鉑的有機金屬化合物;雙(乙醯丙酮)鈀、二氯雙(三苯基膦)鈀、二氯雙(苄腈)鈀、四(三苯基膦)鈀、二亞苄基丙酮鈀等選自鈀的有機金屬化合物,則於曝光步驟及/或加熱步驟中藉由分解.凝聚而黑色化。 On the other hand, if it contains platinum-containing organic metal compounds such as bis(acetylacetone)platinum, dichlorobis(triphenylphosphine)platinum, dichlorobis(benzonitrile)platinum; bis(acetylacetylacetone)palladium, dichlorobis(benzonitrile)platinum Organometallic compounds selected from palladium such as chlorobis(triphenylphosphine)palladium, dichlorobis(benzonitrile)palladium, tetrakis(triphenylphosphine)palladium, dibenzylideneacetonepalladium, etc., are used in the exposure step and/or By decomposition in the heating step. Condensed and blackened.
該些中,就進一步提高OD值的觀點而言,較佳為選自雙(乙醯丙酮)鈀、二氯雙(三苯基膦)鈀、二氯雙(苄腈)鈀及四(三苯基膦)鈀中的有機金屬化合物。 Among these, from the viewpoint of further increasing the OD value, it is preferable to be selected from the group consisting of bis(acetyl acetone) palladium, dichlorobis(triphenylphosphine) palladium, dichlorobis(benzonitrile) palladium and tetrakis(triphenyl phosphine) palladium. Organometallic compounds in phenylphosphine) palladium.
於本發明的樹脂組成物中,有機金屬化合物在固體成分中所佔的含量較佳為0.2重量%~5重量%。藉由將有機金屬化合物的含量設為0.2重量%以上,可進一步提高所得的隔離壁的OD值。有機金屬化合物的含量更佳為1.5重量%以上。另一方面,藉由將有機金屬化合物的含量設為5重量%以下,可進一步提高反射率。 In the resin composition of the present invention, the content of the organic metal compound in the solid content is preferably 0.2% to 5% by weight. By setting the content of the organic metal compound to 0.2% by weight or more, the OD value of the obtained partition wall can be further increased. The content of the organic metal compound is more preferably 1.5% by weight or more. On the other hand, by setting the content of the organic metal compound to 5% by weight or less, the reflectance can be further improved.
本發明的樹脂組成物於用於後述的隔離壁(A-1)的圖案形成的情況下,較佳為具有負型或正型的感光性。於賦予負型感光性 的情況下,較佳為含有光聚合起始劑,可形成高精細的圖案形狀的隔離壁。負型感光性樹脂組成物較佳為進一步含有光聚合性化合物。另一方面,於賦予正型感光性的情況下,較佳為含有醌二疊氮化合物。 When the resin composition of the present invention is used for pattern formation of partition walls (A-1) described below, it is preferred that the resin composition has negative or positive photosensitivity. To impart negative photosensitivity In the case of , it is preferable to contain a photopolymerization initiator so that a high-definition pattern-shaped partition wall can be formed. The negative photosensitive resin composition preferably further contains a photopolymerizable compound. On the other hand, when imparting positive photosensitivity, it is preferable to contain a quinonediazide compound.
光聚合起始劑只要藉由光(包括紫外線、電子束)的照射分解及/或反應而產生自由基,則可為任意的光自由基聚合起始劑。例如可列舉:2-甲基-[4-(甲硫基)苯基]-2-嗎啉代丙烷-1-酮、2-二甲基胺基-2-(4-甲基苄基)-1-(4-嗎啉-4-基-苯基)-丁烷-1-酮、2-苄基-2-二甲基胺基-1-(4-嗎啉代苯基)-丁酮-1等α-胺基苯烷基酮化合物;2,4,6-三甲基苯甲醯基苯基氧化膦、雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦、雙(2,6-二甲氧基苯甲醯基)-(2,4,4-三甲基戊基)-氧化膦等醯基氧化膦化合物;1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟、1,2-辛二酮-1-[4-(苯硫基)-2-(O-苯甲醯基肟)]、1-苯基-1,2-丁酮-2-(O-甲氧基羰基)肟、1,3-二苯基丙烷三酮-2-(O-乙氧基羰基)肟、乙酮-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-1-(O-乙醯基肟)等肟酯化合物;苄基二甲基縮酮等苄基縮酮化合物;2-羥基-2-甲基-1-苯基丙烷-1-酮、1-(4-異丙基苯基)-2-羥基-2-甲基丙烷-1-酮、4-(2-羥基乙氧基)苯基-(2-羥基-2-丙基)酮、1-羥基環己基-苯基酮等α-羥基酮化合物;二苯甲酮、4,4-雙(二甲基胺基)二苯甲酮、4,4-雙(二乙基胺基)二苯甲酮、鄰苯甲醯基苯甲酸甲酯、4-苯基二苯甲酮、4,4-二氯二苯甲酮、羥基二苯甲酮、4-苯甲醯基-4'-甲基-二苯基硫醚、烷基化二苯甲酮、3,3',4,4'-四(第三丁基過氧化羰基)二苯甲酮 等二苯甲酮化合物;2,2-二乙氧基苯乙酮、2,3-二乙氧基苯乙酮、4-第三丁基二氯苯乙酮、苯亞甲基苯乙酮、4-疊氮苯亞甲基苯乙酮等苯乙酮化合物;2-苯基-2-氧基乙酸甲酯等芳香族酮酯化合物;4-二甲基胺基苯甲酸乙酯、4-二甲基胺基苯甲酸(2-乙基)己酯、4-二乙基胺基苯甲酸乙酯、2-苯甲醯基苯甲酸甲酯等苯甲酸酯化合物等。亦可含有兩種以上該些化合物。 The photopolymerization initiator may be any photoradical polymerization initiator as long as it decomposes and/or reacts by irradiation with light (including ultraviolet rays and electron beams) to generate free radicals. Examples include: 2-methyl-[4-(methylthio)phenyl]-2-morpholinopropan-1-one, 2-dimethylamino-2-(4-methylbenzyl) -1-(4-morpholin-4-yl-phenyl)-butan-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan α-aminophenylalkyl ketone compounds such as ketone-1; 2,4,6-trimethylbenzylphenylphosphine oxide, bis(2,4,6-trimethylbenzylphenyl)-benzene 1-Phenyl-1, 2-propanedione-2-(O-ethoxycarbonyl)oxime, 1,2-octanedione-1-[4-(phenylthio)-2-(O-benzoyloxime)], 1-phenyl-1,2-butanone-2-(O-methoxycarbonyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, ethanone- 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-1-(O-acetyl oxime) and other oxime ester compounds; benzyl dimethyl benzyl ketal compounds such as methyl ketal; 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-(4-isopropylphenyl)-2-hydroxy-2-methylpropane -α-hydroxyketone compounds such as 1-one, 4-(2-hydroxyethoxy)phenyl-(2-hydroxy-2-propyl)one, 1-hydroxycyclohexyl-phenylketone; benzophenone , 4,4-bis(dimethylamino)benzophenone, 4,4-bis(diethylamino)benzophenone, methyl o-phenylbenzoate, 4-phenyldi Benzophenone, 4,4-dichlorobenzophenone, hydroxybenzophenone, 4-benzoyl-4'-methyl-diphenyl sulfide, alkylated benzophenone, 3, 3',4,4'-tetrakis(tert-butylperoxycarbonyl)benzophenone Other benzophenone compounds; 2,2-diethoxyacetophenone, 2,3-diethoxyacetophenone, 4-tert-butyldichloroacetophenone, benzylideneacetophenone , 4-azidobenzylideneacetophenone and other acetophenone compounds; 2-phenyl-2-oxyacetic acid methyl ester and other aromatic ketone ester compounds; 4-dimethylaminobenzoic acid ethyl ester, 4 - Benzoate compounds such as (2-ethyl)hexyl dimethylaminobenzoate, ethyl 4-diethylaminobenzoate, and methyl 2-benzoylbenzoate. Two or more of these compounds may be contained.
就有效果地進行自由基硬化的觀點而言,本發明的樹脂組成物中的光聚合起始劑的含量於固體成分中,較佳為0.01重量%以上,更佳為1重量%以上。另一方面,就抑制殘留的光聚合起始劑的溶出等,進一步提高黃變的觀點而言,光聚合起始劑的含量於固體成分中,較佳為20重量%以下,更佳為10重量%以下。 From the viewpoint of effectively performing radical curing, the content of the photopolymerization initiator in the resin composition of the present invention is preferably 0.01% by weight or more, and more preferably 1% by weight or more based on the solid content. On the other hand, from the viewpoint of suppressing elution of the remaining photopolymerization initiator and further increasing yellowing, the content of the photopolymerization initiator in the solid content is preferably 20% by weight or less, more preferably 10% by weight. weight% or less.
所謂本發明中的光聚合性化合物,是指於分子中具有兩個以上乙烯性不飽和雙鍵的化合物。若考慮自由基聚合性的容易性,則光聚合性化合物較佳為具有(甲基)丙烯酸基。 The photopolymerizable compound in the present invention refers to a compound having two or more ethylenically unsaturated double bonds in the molecule. In consideration of ease of radical polymerization, the photopolymerizable compound preferably has a (meth)acrylic acid group.
作為光聚合性化合物,例如可列舉:二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、四乙二醇二丙烯酸酯、二乙二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、四乙二醇二甲基丙烯酸酯、三羥甲基丙烷二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、三羥甲基丙烷二甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、1,3-丁二醇二丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、新戊二醇二丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,4-丁二醇二甲基丙烯酸酯、1,6-己二醇二丙烯酸酯、1,9-壬二醇二甲基丙烯酸酯、1,10-癸二醇二甲基丙烯酸酯、 二羥甲基-三環癸烷二丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、三季戊四醇七丙烯酸酯、三季戊四醇八丙烯酸酯、四季戊四醇九丙烯酸酯、四季戊四醇十丙烯酸酯、五季戊四醇十一丙烯酸酯、五季戊四醇十二丙烯酸酯、三季戊四醇七甲基丙烯酸酯、三季戊四醇八甲基丙烯酸酯、四季戊四醇九甲基丙烯酸酯、四季戊四醇十甲基丙烯酸酯、五季戊四醇十一甲基丙烯酸酯、五季戊四醇十二甲基丙烯酸酯、二羥甲基-三環癸烷二丙烯酸酯等。亦可含有兩種以上該些化合物。 Examples of the photopolymerizable compound include: diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, and triethylene glycol dimethyl acrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethylacrylate acrylate, 1,3-butanediol diacrylate, 1,3-butanediol dimethacrylate, neopentyl glycol diacrylate, 1,4-butanediol diacrylate, 1,4 -Butanediol dimethacrylate, 1,6-hexanediol diacrylate, 1,9-nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, Dimethylol-tricyclodecane diacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, trisacrylate Pentaerythritol heptaacrylate, tripentaerythritol octaacrylate, pentaerythritol nonacrylate, pentaerythritol tenacrylate, pentaerythritol undecyl acrylate, pentaerythritol dodecacrylate, tripentaerythritol heptamethacrylate, tripentaerythritol octaacrylate Acrylate, pentaerythritol nona methacrylate, pentaerythritol ten methacrylate, pentaerythritol undeca methacrylate, pentaerythritol dodeca methacrylate, dimethylol-tricyclodecane diacrylate, etc. . Two or more of these compounds may be contained.
就有效果地進行自由基硬化的觀點而言,本發明的樹脂組成物中的光聚合性化合物的含量於固體成分中,較佳為1重量%以上。另一方面,就抑制自由基的過剩反應且提高解析度的觀點而言,光聚合性化合物的含量於固體成分中,較佳為40重量%以下。 From the viewpoint of effectively performing radical curing, the content of the photopolymerizable compound in the resin composition of the present invention is preferably 1% by weight or more based on the solid content. On the other hand, from the viewpoint of suppressing excess reaction of radicals and improving resolution, the content of the photopolymerizable compound in the solid content is preferably 40% by weight or less.
作為醌二疊氮化合物,較佳為醌二疊氮的磺酸利用酯鍵結於具有酚性羥基的化合物上而成的化合物。作為此處使用的具有酚性羥基的化合物,例如可列舉BIs-Z、TekP-4HBPA(四P-DO-BPA)、TrIsP-HAP、TrIsP-PA、BIsRS-2P、BIsRS-3P(以上為商品名,本州化學工業(股)製造)、BIR-PC、BIR-PTBP、BIR-BIPC-F(以上為商品名,旭有機材工業(股)製造)、4,4'-磺醯基二苯酚、BPFL(商品名,JFE化學(股)製造)等。作為醌二疊氮化合物,較佳為於該些具有酚性羥基的化合物中利用酯鍵導入4-萘醌二疊氮磺酸或5-萘醌二疊氮磺酸的化合物,例如可列舉THP-17、TDF- 517(商品名,東洋合成工業(股)製造)、SBF-525(商品名,安智電子材料(AZ Electronic Materials)(股)製造)等。 As the quinonediazide compound, a compound in which a sulfonic acid of quinonediazide is bonded to a compound having a phenolic hydroxyl group via an ester is preferred. Examples of the compound having a phenolic hydroxyl group used here include BIs-Z, TekP-4HBPA (tetraP-DO-BPA), TrIsP-HAP, TrIsP-PA, BIsRS-2P, and BIsRS-3P (the above are commercial products). name, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-PC, BIR-PTBP, BIR-BIPC-F (the above are trade names, manufactured by Asahi Organic Materials Industry Co., Ltd.), 4,4'-sulfonyldiphenol , BPFL (trade name, manufactured by JFE Chemical Co., Ltd.), etc. The quinonediazide compound is preferably a compound in which 4-naphthoquinonediazide sulfonic acid or 5-naphthoquinonediazide sulfonic acid is introduced via an ester bond into a compound having a phenolic hydroxyl group. Examples thereof include THP. -17、TDF- 517 (trade name, manufactured by Toyo Gosei Industry Co., Ltd.), SBF-525 (trade name, manufactured by AZ Electronic Materials Co., Ltd.), etc.
就提高感度的觀點而言,本發明的樹脂組成物中的醌二疊氮化合物的含量於固體成分中較佳為0.5重量%以上,更佳為1重量%以上。另一方面,就提高解析度的觀點而言,醌二疊氮化合物的含量於固體成分中較佳為25重量%以下,更佳為20重量%以下。 From the viewpoint of improving sensitivity, the content of the quinonediazide compound in the resin composition of the present invention is preferably 0.5% by weight or more in solid content, more preferably 1% by weight or more. On the other hand, from the viewpoint of improving resolution, the content of the quinonediazide compound in the solid content is preferably 25% by weight or less, more preferably 20% by weight or less.
溶媒具有將樹脂組成物的黏度調整為適合塗佈的範圍且提高隔離壁的均勻性的功能。作為溶媒,較佳為組合大氣壓下的沸點超過150℃且250℃以下的溶媒與150℃以下的溶媒。 The solvent has the function of adjusting the viscosity of the resin composition to a range suitable for coating and improving the uniformity of the partition wall. As a solvent, it is preferable to combine the solvent whose boiling point under atmospheric pressure exceeds 150 degreeC and 250 degreeC or less, and the solvent which is 150 degreeC or less.
作為溶媒,例如可列舉:乙醇、丙醇、異丙醇、二丙酮醇等醇類;乙二醇、丙二醇等二醇類;乙二醇單甲醚、乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、丙二醇單丙醚、丙二醇單丁醚等醚類;甲基乙基酮、乙醯丙酮、甲基丙基酮、甲基丁基酮、甲基異丁基酮、二異丁基酮、環戊酮等酮類;二甲基甲醯胺、二甲基乙醯胺等醯胺類;乙酸乙酯、乙酸丙酯、乙酸丁酯、乙酸異丁酯、乙二醇單乙醚乙酸酯、丙二醇單甲醚乙酸酯、乙酸3-甲氧基丁酯、乙酸3-甲基-3-甲氧基丁酯、乳酸甲酯、乳酸乙酯、乳酸丁酯等乙酸酯類;甲苯、二甲苯、己烷、環己烷等芳香族或脂肪族烴、γ-丁內酯、N-甲基-2-吡咯啶酮、二甲基亞碸等。亦可含有兩種以上該些化合物。該些中,就塗佈性的觀點而言,較佳為組合作為大氣壓下的沸點超過150℃且250℃以下的溶媒的二丙酮醇與作為150℃以下的 溶媒的丙二醇單甲醚。 Examples of the solvent include: alcohols such as ethanol, propanol, isopropyl alcohol, and diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, and propylene glycol monomethyl ether. , propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether and other ethers; methyl ethyl ketone, acetylacetone, methyl propyl ketone, methyl butyl ketone, methyl isobutyl ketone, diisobutyl ketone Ketones such as base ketone and cyclopentanone; amides such as dimethylformamide and dimethylacetamide; ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate, and ethylene glycol monoethyl ether Acetate, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, butyl lactate and other acetate esters ; Toluene, xylene, hexane, cyclohexane and other aromatic or aliphatic hydrocarbons, γ-butyrolactone, N-methyl-2-pyrrolidone, dimethyl sulfoxide, etc. Two or more of these compounds may be contained. Among these, from the viewpoint of coatability, it is preferable to combine diacetone alcohol, which is a solvent having a boiling point under atmospheric pressure exceeding 150°C and 250°C or lower, and diacetone alcohol, which is a solvent having a boiling point of 150°C or lower. Propylene glycol monomethyl ether as solvent.
溶媒的含量可根據塗佈方法等任意設定。例如於藉由旋塗進行膜形成的情況下,溶媒的含量一般設為於樹脂組成物中為50重量%以上且95重量%以下。 The content of the solvent can be set arbitrarily according to the coating method, etc. For example, when forming a film by spin coating, the content of the solvent in the resin composition is generally set to 50% by weight or more and 95% by weight or less.
本發明的樹脂組成物較佳為進一步含有具有磷原子的配位性化合物(以下,有時記載為「配位性化合物」)。配位性化合物與樹脂組成物中的有機金屬化合物配位,提高有機金屬化合物於溶媒中的溶解性,促進有機金屬化合物的分解,可進一步提高所得的隔離壁的OD值。作為配位性化合物,例如可列舉:三苯基膦、三-第三丁基膦、三甲基膦、三環己基膦、四氟硼酸三-第三丁基膦、三(2-呋喃基)膦、三(1-金剛烷基)膦、三(二乙基胺基)膦、三(4-甲氧基苯基)膦、三(O-甲苯基)膦等。亦可含有兩種以上該些化合物。相對於有機金屬化合物,本發明的樹脂組成物中的配位性化合物的含量較佳為0.5莫耳當量~3.0莫耳當量。 The resin composition of the present invention preferably further contains a coordination compound having a phosphorus atom (hereinafter, may be described as a "coordination compound"). The coordination compound coordinates with the organic metal compound in the resin composition, improves the solubility of the organic metal compound in the solvent, promotes the decomposition of the organic metal compound, and can further increase the OD value of the obtained partition wall. Examples of the coordination compound include triphenylphosphine, tri-tert-butylphosphine, trimethylphosphine, tricyclohexylphosphine, tri-tert-butylphosphine tetrafluoroborate, tris(2-furyl ) phosphine, tris(1-adamantyl)phosphine, tris(diethylamino)phosphine, tris(4-methoxyphenyl)phosphine, tris(O-tolyl)phosphine, etc. Two or more of these compounds may be contained. Relative to the organometallic compound, the content of the coordination compound in the resin composition of the present invention is preferably 0.5 molar equivalent to 3.0 molar equivalent.
本發明的樹脂組成物較佳為進一步含有白色顏料及/或黑色顏料。白色顏料具有進一步提高隔離壁的反射率的功能。黑色顏料具有調整OD值的功能。 The resin composition of the present invention preferably further contains a white pigment and/or a black pigment. The white pigment has the function of further improving the reflectivity of the partition wall. Black pigment has the function of adjusting the OD value.
作為白色顏料,例如可列舉二氧化鈦、氧化鋯、氧化鋅、硫酸鋇、該些的複合化合物等。亦可含有兩種以上該些化合物。該些中,較佳為反射率高且容易在工業上利用的二氧化鈦。 Examples of white pigments include titanium dioxide, zirconium oxide, zinc oxide, barium sulfate, and composite compounds of these. Two or more of these compounds may be contained. Among these, titanium dioxide has high reflectivity and is easily industrially utilized.
二氧化鈦的結晶結構分為銳鈦礦型、金紅石型及板鈦礦型。該些中,就光觸媒活性低的方面而言,較佳為金紅石型氧化鈦。 The crystal structure of titanium dioxide is divided into anatase type, rutile type and brookite type. Among these, rutile titanium oxide is preferable in terms of low photocatalytic activity.
亦可對白色顏料實施表面處理。較佳為利用選自Al、Si及Zr中的金屬進行表面處理,可提高形成的隔離壁的耐光性及耐熱性。 Surface treatment of white pigments is also possible. It is preferable to use a metal selected from Al, Si and Zr for surface treatment, which can improve the light resistance and heat resistance of the formed partition wall.
就進一步提高隔離壁的反射率的觀點而言,白色顏料的中值粒徑較佳為100nm~500nm。此處,白色顏料的中值粒徑可由使用粒度分佈測定裝置(N4-PLUS;貝克曼-庫爾特(beckman-coulter)(股)製造)等藉由雷射繞射法測定的粒度分佈算出。 From the viewpoint of further improving the reflectance of the partition wall, the median particle diameter of the white pigment is preferably 100 nm to 500 nm. Here, the median particle diameter of the white pigment can be calculated from the particle size distribution measured by the laser diffraction method using a particle size distribution measuring device (N4-PLUS; manufactured by Beckman Coulter Co., Ltd.) or the like. .
作為可較佳地用作白色顏料的二氧化鈦顏料例如可列舉:R960;杜邦(股)製造(金紅石型、SiO2/Al2O3處理、平均一次粒徑210nm)、CR-97;石原產業(股)製造(金紅石型、Al2O3/ZrO2處理、平均一次粒徑250nm)、JR-301;帝化(Tayca)(股)製造(金紅石型、Al2O3處理、平均一次粒徑300nm)、JR-405;帝化(Tayca)(股)製造(金紅石型、Al2O3處理、平均一次粒徑210nm)、JR-600A;帝化(Tayca)(股)(金紅石型、Al2O3處理、平均一次粒徑250nm)、JR-603;帝化(Tayca)(股)(金紅石型、Al2O3/ZrO2處理、平均一次粒徑280nm)等。亦可含有兩種以上該些化合物。 Examples of titanium dioxide pigments that can be preferably used as white pigments include: R960; manufactured by DuPont Co., Ltd. (rutile type, SiO 2 /Al 2 O 3 treatment, average primary particle diameter 210 nm), CR-97; Ishihara Sangyo Co., Ltd. (rutile type, Al 2 O 3 /ZrO 2 treatment, average primary particle size 250 nm), JR-301; manufactured by Tayca Co., Ltd. (rutile type, Al 2 O 3 treatment, average Primary particle size 300 nm), JR-405; manufactured by Tayca Co., Ltd. (rutile type, Al 2 O 3 treatment, average primary particle size 210 nm), JR-600A; manufactured by Tayca Co., Ltd. ( Rutile type, Al 2 O 3 treatment, average primary particle size 250 nm), JR-603; Tayca (Rutile type, Al 2 O 3 /ZrO 2 treatment, average primary particle size 280 nm), etc. . Two or more of these compounds may be contained.
就進一步提高反射率的觀點而言,樹脂組成物中的白色顏料的含量較佳為固體成分中的20重量%以上,更佳為30重量%以上。另一方面,就提高隔離壁的表面平滑性的觀點而言,白色顏料的含量較佳為固體成分中的60重量%以下,更佳為55重量%以下。 From the viewpoint of further improving the reflectance, the content of the white pigment in the resin composition is preferably 20% by weight or more of the solid content, more preferably 30% by weight or more. On the other hand, from the viewpoint of improving the surface smoothness of the partition wall, the content of the white pigment is preferably 60% by weight or less of the solid content, more preferably 55% by weight or less.
作為黑色顏料,例如可列舉黑色有機顏料、混色有機顏料、黑色無機顏料等。 Examples of the black pigment include black organic pigments, mixed color organic pigments, black inorganic pigments, and the like.
作為黑色有機顏料,例如可列舉碳黑、苝黑、苯胺黑、苯並呋喃酮系顏料等。該些亦可被樹脂被覆。 Examples of black organic pigments include carbon black, perylene black, aniline black, and benzofuranone-based pigments. These can also be coated with resin.
作為混色有機顏料,例如可列舉將選自紅、藍、綠、紫、黃色、品紅及青等中的兩種以上的顏料混合而模擬黑色化的顏料。該些中,就兼具適度高的OD值與圖案加工性的觀點而言,較佳為紅色顏料與藍色顏料的混合顏料。混合顏料中的紅色顏料與藍色顏料的重量比較佳為20/80~80/20,更佳為30/70~70/30。若利用顏色指數(color index,CI)號表示代表性的顏料的具體例,則可列舉如下例子。作為紅色顏料,例如可列舉:顏料紅(pigment red)(以下簡稱為PR)9、PR48、PR97、PR122、PR123、PR144、PR149、PR166、PR168、PR177、PR179、PR180、PR192、PR209、PR215、PR216、PR217、PR220、PR223、PR224、PR226、PR227、PR228、PR240、PR254等。亦可含有兩種以上該些化合物。作為藍色顏料,例如可列舉:顏料藍(pigment blue)(以下簡稱為PB)15、PB15:3、PB15:4、PB15:6、PB22、PB60、PB64等。亦可含有兩種以上該些化合物。 Examples of mixed-color organic pigments include those in which two or more pigments selected from the group consisting of red, blue, green, violet, yellow, magenta, cyan, etc. are mixed to simulate blackening. Among these, a mixed pigment of a red pigment and a blue pigment is preferable from the viewpoint of having both a moderately high OD value and pattern processability. The weight ratio of the red pigment and the blue pigment in the mixed pigment is preferably 20/80~80/20, and more preferably 30/70~70/30. If specific examples of representative pigments are represented by color index (color index, CI) numbers, the following examples can be cited. Examples of red pigments include: Pigment Red (hereinafter referred to as PR) 9, PR48, PR97, PR122, PR123, PR144, PR149, PR166, PR168, PR177, PR179, PR180, PR192, PR209, PR215, PR216, PR217, PR220, PR223, PR224, PR226, PR227, PR228, PR240, PR254, etc. Two or more of these compounds may be contained. Examples of the blue pigment include pigment blue (hereinafter referred to as PB) 15, PB15:3, PB15:4, PB15:6, PB22, PB60, PB64, and the like. Two or more of these compounds may be contained.
作為黑色無機顏料,例如可列舉:石墨;鈦、銅、鐵、錳、鈷、鉻、鎳、鋅、鈣、銀、金、鉑、鈀等金屬的微粒子;金屬氧化物;金屬複合氧化物;金屬硫化物;金屬氮化物;金屬氧氮化物;金屬碳化物等。亦可含有兩種以上該些化合物。 Examples of black inorganic pigments include: graphite; fine particles of metals such as titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, silver, gold, platinum, and palladium; metal oxides; metal composite oxides; Metal sulfides; metal nitrides; metal oxynitrides; metal carbides, etc. Two or more of these compounds may be contained.
於以上的黑色顏料中,就具有高遮光性的方面而言,較佳為選自氮化鈦、氮化鋯、碳黑、以及紅色顏料與藍色顏料的重量比為20/80~80/20的混合顏料中的顏料。進而,就容易將隔離壁(A-1)的錐角調整為後述的較佳的範圍內的觀點而言,更佳為選自氮化鈦、氮化鋯、以及紅色顏料與藍色顏料的重量比為20/80~80/20的混合顏料中的顏料。 Among the above black pigments, in terms of having high light-shielding properties, it is preferable to be selected from titanium nitride, zirconium nitride, carbon black, and the weight ratio of red pigments to blue pigments is 20/80~80/ 20's of pigments in the mix. Furthermore, from the viewpoint of easily adjusting the taper angle of the partition wall (A-1) within a preferable range described below, it is more preferably selected from the group consisting of titanium nitride, zirconium nitride, and red and blue pigments. Pigments in mixed pigments with a weight ratio of 20/80~80/20.
就將反射率及OD調整為所述範圍來進一步抑制鄰接畫素中的光混色的觀點而言,樹脂組成物中的黑色顏料的含量較佳為固體成分中的0.01重量%以上,更佳為0.05重量%以上。另一方面,就將反射率及OD調整為所述範圍的觀點而言,黑色顏料的含量較佳為固體成分中的5重量%以下,更佳為3重量%以下。 From the viewpoint of adjusting the reflectance and OD to the above ranges to further suppress light color mixing in adjacent pixels, the content of the black pigment in the resin composition is preferably 0.01% by weight or more of the solid content, more preferably 0.05% by weight or more. On the other hand, from the viewpoint of adjusting the reflectance and OD to the above ranges, the content of the black pigment is preferably 5% by weight or less of the solid content, more preferably 3% by weight or less.
本發明的樹脂組成物較佳為進一步含有光鹼產生劑。藉由含有光鹼產生劑,於曝光步驟中產生鹼,促進樹脂組成物中的有機金屬化合物的分解.凝聚,因此可效率更良好地將有機金屬化合物變換為黑色粒子或黃色粒子,可進一步提高所得的隔離壁的OD值。 The resin composition of the present invention preferably further contains a photobase generator. By containing a photobase generator, a base is generated during the exposure step to promote the decomposition of the organic metal compounds in the resin composition. agglomeration, so the organic metal compound can be converted into black particles or yellow particles more efficiently, and the OD value of the obtained partition wall can be further increased.
光鹼產生劑只要是藉由光(包含紫外線、電子束)的照射分解及/或反應而產生鹼的物質,則可為任意的光鹼產生劑。例如可列舉:2-(9-氧呫噸-2-基)丙酸1,5,7-三氮雜環[4,4,0]癸-5-烯、N-環己基胺基甲酸1-(蒽醌-2-基)乙基、N,N-二乙基胺基甲酸9-蒽基甲基、N-環己基胺基甲酸9-蒽基甲基、1-羧酸9-蒽基甲基哌啶、N,N-二環己基胺基甲酸9-蒽基甲基、N,N-二環己基胺基甲酸1-(蒽醌-2-基)乙基、丙酸環己基銨-(3-苯甲醯基苯基)、丁基三苯基硼酸
1,2-二環己基-4,4,5,5-四甲基雙胍、2-(3-苯甲醯基苯基)丙酸1,2-二異丙基-3-[雙(二甲基胺基)亞甲基]胍、(2-硝基苯基)甲基4-羥基哌啶-1-羧酸、2-(3-苯甲醯基苯基)丙酸胍等。亦可使用兩種以上該些化合物。
The photobase generator may be any photobase generator as long as it is decomposed and/or reacted by irradiation with light (including ultraviolet rays and electron beams) to generate a base. Examples include: 2-(9-oxanthene-2-yl)
就進一步提高OD值的觀點而言,本發明的樹脂組成物中的光鹼產生劑的含量較佳為固體成分中的0.5重量%以上。另一方面,就提高解析度的觀點而言,光鹼產生劑的含量較佳為固體成分中的2.0重量%以下。 From the viewpoint of further improving the OD value, the content of the photobase generator in the resin composition of the present invention is preferably 0.5% by weight or more of the solid content. On the other hand, from the viewpoint of improving resolution, the content of the photobase generator is preferably 2.0% by weight or less of the solid content.
本發明的樹脂組成物亦可含有防液化合物。所謂防液化合物,是指賦予樹脂組成物排斥水或有機溶媒的性質(防液性能)的化合物。只要是具有所述性質的化合物即可,並無特別限定,具體而言,可較佳地使用具有氟烷基的化合物。藉由含有防液化合物,於隔離壁(A-1)形成後,可賦予隔離壁的頂部防液性能。藉此,例如於形成後述的(B)含有顏色變換發光材料的畫素時,可在各個畫素中容易分別塗敷組成不同的顏色變換發光材料。 The resin composition of the present invention may also contain a liquid-repellent compound. The liquid-repellent compound refers to a compound that imparts properties (liquid-repellent performance) to the resin composition to repel water or organic solvents. It is not particularly limited as long as it is a compound having the properties described above. Specifically, a compound having a fluoroalkyl group can be preferably used. By containing a liquid-proof compound, after the partition wall (A-1) is formed, the top of the partition wall can be given liquid-proof properties. Thereby, for example, when forming (B) pixels containing a color-converting luminescent material described later, color-converting luminescent materials with different compositions can be easily applied to each pixel.
作為防液化合物,例如可列舉:1,1,2,2-四氟辛基(1,1,2,2-四氟丙基)醚、1,1,2,2-四氟辛基己醚、八乙二醇二(1,1,2,2-四氟丁基)醚、六乙二醇(1,1,2,2,3,3-六氟戊基)醚、八丙二醇二(1,1,2,2-四氟丁基)醚、六丙二醇二(1,1,2,2,3,3-六氟戊基)醚、全氟十二烷基磺酸鈉、1,1,2,2,8,8,9,9,10,10-十氟十二烷、1,1,2,2,3,3-六氟癸烷、N-[3-(全氟辛磺醯胺)丙基]-N,N'-二甲基-N-羧基亞甲基銨甜菜鹼、全氟烷基磺醯胺丙基三甲基銨鹽、全氟烷基-N-乙基磺醯基甘胺酸鹽、 磷酸雙(N-全氟辛基磺醯基-N-乙基胺基乙基)、單全氟烷基乙基磷酸酯等在末端、主鏈及側鏈具有氟烷基或伸氟烷基的化合物等。另外,作為市售的防液化合物,可列舉:「美佳法(Megafac)」(註冊商標)F142D、F172、F173、F183、F444、F477(以上為大日本油墨化學工業(股)製造),艾福拓(Eftop)EF301、303、352(新秋田化成(股)製造),弗拉德(Fluorad)FC-430、FC-431(住友3M(股)製造)),「阿薩佳(Asahi Guard)」(註冊商標)AG710、「沙福隆(Surflon)」(註冊商標)S-382、SC-101、SC-102、SC-103、SC-104、SC-105、SC-106(旭硝子(股)製造),BM-1000、BM-1100(裕商(股)製造),NBX-15、FTX-218、DFX-18(尼歐斯(Neos)(股)製造)等。亦可含有兩種以上該些化合物。該些中,就反應性高、可與樹脂形成牢固的鍵的方面而言,更佳為具有光聚合性基的樹脂。作為具有氟原子及光聚合性基的防液化合物,例如可列舉「美佳法(Megafac)」(註冊商標)RS-76-E、RS-56、RS-72-k、RS-75、RS-76-E、RS-76-NS、RS-76、RS-90(以上為商品名,DIC(股)製造)等。再者,該情況下,於由負型感光性樹脂組成物的光硬化物構成的隔離壁(A-1)中,光聚合性基可進行光聚合。 Examples of liquid-proof compounds include 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl) ether and 1,1,2,2-tetrafluorooctylhexane Ether, octaethylene glycol di(1,1,2,2-tetrafluorobutyl) ether, hexaethylene glycol (1,1,2,2,3,3-hexafluoropentyl) ether, octapropylene glycol di(1,1,2,2,3-hexafluoropentyl) ether (1,1,2,2-tetrafluorobutyl) ether, hexapropylene glycol di(1,1,2,2,3,3-hexafluoropentyl) ether, sodium perfluorodecanesulfonate, 1 ,1,2,2,8,8,9,9,10,10-decafluorodecane, 1,1,2,2,3,3-hexafluorodecane, N-[3-(perfluorodecane Octanesulfonamide)propyl]-N,N'-dimethyl-N-carboxymethylene ammonium betaine, perfluoroalkylsulfonamide propyltrimethylammonium salt, perfluoroalkyl-N- Ethyl sulfonylglycinate, Bis(N-perfluorooctylsulfonyl-N-ethylaminoethyl) phosphate, monoperfluoroalkyl ethyl phosphate, etc. have fluoroalkyl or fluoroalkyl groups at the terminal, main chain and side chain compounds, etc. In addition, commercially available liquid-repellent compounds include: "Megafac" (registered trademark) F142D, F172, F173, F183, F444, and F477 (the above are manufactured by Dainippon Ink Chemical Industry Co., Ltd.), Ai Eftop EF301, 303, 352 (manufactured by Shin-Akita Chemical Co., Ltd.), Fluorad FC-430, FC-431 (manufactured by Sumitomo 3M Co., Ltd.), "Asahi Guard" )" (registered trademark) AG710, "Surflon" (registered trademark) S-382, SC-101, SC-102, SC-103, SC-104, SC-105, SC-106 (Asahi Glass ( Co., Ltd.), BM-1000, BM-1100 (manufactured by Yushang Co., Ltd.), NBX-15, FTX-218, DFX-18 (manufactured by Neos Co., Ltd.), etc. Two or more of these compounds may be contained. Among these, resins having a photopolymerizable group are more preferred in terms of high reactivity and the ability to form a strong bond with the resin. Examples of the liquid-repellent compound having a fluorine atom and a photopolymerizable group include "Megafac" (registered trademark) RS-76-E, RS-56, RS-72-k, RS-75, RS- 76-E, RS-76-NS, RS-76, RS-90 (the above are trade names, manufactured by DIC Corporation), etc. Furthermore, in this case, the photopolymerizable group can be photopolymerized in the partition wall (A-1) composed of the photocured material of the negative photosensitive resin composition.
就提高隔離壁的防液性能、提高噴墨塗佈性的觀點而言,樹脂組成物中的防液化合物的含量較佳為固體成分中的0.01重量%以上,更佳為0.1重量%以上。另一方面,就提高與樹脂或白色顏料的相容性的觀點而言,防液化合物的含量較佳為固體成分中的10重量%以下,更佳為5重量%以下。 From the viewpoint of improving the liquid-repellent performance of the partition wall and improving the inkjet coatability, the content of the liquid-repellent compound in the resin composition is preferably 0.01% by weight or more of the solid content, more preferably 0.1% by weight or more. On the other hand, from the viewpoint of improving compatibility with resin or white pigment, the content of the liquid-repellent compound is preferably 10% by weight or less of the solid content, more preferably 5% by weight or less.
另外,本發明的樹脂組成物視需要可含有紫外線吸收劑、聚合抑制劑、界面活性劑、密接性改良劑等。 In addition, the resin composition of the present invention may contain an ultraviolet absorber, a polymerization inhibitor, a surfactant, an adhesion improving agent, etc. as needed.
藉由於本發明的樹脂組成物中含有紫外線吸收劑,可提高耐光性,進一步提高解析度。作為紫外線吸收劑,就透明性及非著色性的觀點而言,可較佳地使用2-(2H苯並三唑-2-基)苯酚、2-(2H-苯並三唑-2-基)-4,6-第三戊基苯酚、2-(2H苯並三唑-2-基)-4-(1,1,3,3-四甲基丁基)苯酚、2(2H-苯並三唑-2-基)-6-十二烷基-4-甲基苯酚、2-(2'-羥基-5'-甲基丙烯醯氧基乙基苯基)-2H-苯並三唑等苯並三唑系化合物;2-羥基-4-甲氧基二苯甲酮等二苯甲酮系化合物;2-(4,6-二苯基-1,3,5三嗪-2-基)-5-[(己基)氧基]-苯酚等三嗪系化合物等。 By containing an ultraviolet absorber in the resin composition of the present invention, the light resistance can be improved and the resolution can be further improved. As the ultraviolet absorber, from the viewpoint of transparency and non-coloring properties, 2-(2H-benzotriazol-2-yl)phenol and 2-(2H-benzotriazol-2-yl) are preferably used. )-4,6-tertiary amylphenol, 2-(2H benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2(2H-benzene Triazol-2-yl)-6-dodecyl-4-methylphenol, 2-(2'-hydroxy-5'-methacryloyloxyethylphenyl)-2H-benzotriazole Benzotriazole compounds such as azole; benzophenone compounds such as 2-hydroxy-4-methoxybenzophenone; 2-(4,6-diphenyl-1,3,5triazine-2 Triazine compounds such as -yl)-5-[(hexyl)oxy]-phenol, etc.
藉由於本發明的樹脂組成物中含有聚合抑制劑,可進一步提高解析度。作為聚合抑制劑,例如可列舉:二-第三丁基羥基甲苯、丁基羥基苯甲醚、對苯二酚、4-甲氧基苯酚、1,4-苯醌、第三丁基兒茶酚。另外,作為市售的聚合抑制劑,可列舉:「易璐諾斯(IRGANOX)」(註冊商標)1010、1035、1076、1098、1135、1330、1726、1425、1520、245、259、3114、565、295(以上為商品名,日本巴斯夫(Japan BASF)(股)製造)等。亦可含有兩種以上該些化合物。 By containing a polymerization inhibitor in the resin composition of the present invention, the resolution can be further improved. Examples of the polymerization inhibitor include di-tert-butylhydroxytoluene, butylhydroxyanisole, hydroquinone, 4-methoxyphenol, 1,4-benzoquinone, and tert-butylcatechu. phenol. In addition, examples of commercially available polymerization inhibitors include "IRGANOX" (registered trademark) 1010, 1035, 1076, 1098, 1135, 1330, 1726, 1425, 1520, 245, 259, 3114, 565, 295 (the above are trade names, manufactured by Japan BASF Co., Ltd.), etc. Two or more of these compounds may be contained.
藉由於本發明的樹脂組成物中含有界面活性劑,可提高塗佈時的流動性。作為界面活性劑,例如可列舉:「美佳法(Megafac)」(註冊商標)F142D、F172、F173、F183、F445、F470、F475、F477 (以上為商品名,大日本油墨化學工業(股)製造),NBX-15、FTX-218(以上為商品名,尼歐斯(Neos)(股)製造)等氟系界面活性劑;「畢克(BYK)」(註冊商標)F-333、301、331、345、307(以上為商品名,日本畢克化學(BYK-Chemie Japan)(股)製造)等矽酮系界面活性劑;聚環氧烷系界面活性劑;聚(甲基)丙烯酸酯系界面活性劑等。亦可含有兩種以上該些化合物。 By containing a surfactant in the resin composition of the present invention, the fluidity during coating can be improved. Examples of surfactants include "Megafac" (registered trademark) F142D, F172, F173, F183, F445, F470, F475, and F477 (The above are trade names, manufactured by Dainippon Ink Chemical Industry Co., Ltd.), NBX-15, FTX-218 (the above are trade names, manufactured by Neos Co., Ltd.) and other fluorine-based surfactants; Silicone surfactants such as BYK (registered trademark) F-333, 301, 331, 345, 307 (the above are trade names, manufactured by BYK-Chemie Japan (Co., Ltd.)); poly Alkylene oxide surfactants; poly(meth)acrylate surfactants, etc. Two or more of these compounds may be contained.
藉由於本發明的樹脂組成物中含有密接性改良劑,與基底基板的密接性提高,可獲得可靠性高的隔離壁。作為密接性改良劑,例如可列舉脂環式環氧化合物、矽烷偶合劑等。該些中,脂環式環氧化合物的耐熱性高,因此可進一步抑制加熱後的顏色變化。 Since the resin composition of the present invention contains an adhesion improving agent, the adhesion to the base substrate is improved, and a highly reliable partition wall can be obtained. Examples of the adhesion improving agent include alicyclic epoxy compounds, silane coupling agents, and the like. Among these, alicyclic epoxy compounds have high heat resistance and can further suppress color change after heating.
作為脂環式環氧化合物,例如可列舉:3',4'-環氧基環己基甲基-3,4-環氧基環己烷羧酸酯、2,2-雙(羥基甲基)-1-丁醇的1,2-環氧基-4-(2-環氧乙烷基)環己烷加成物、ε-己內酯改質3',4'-環氧基環己基甲基3',4'-環氧基環己烷羧酸酯、1,2-環氧基-4-乙烯基環己烷、丁烷四羧酸四(3,4-環氧基環己基甲基)修飾ε-己內酯、甲基丙烯酸3,4-環氧基環己基甲酯、氫化雙酚A二縮水甘油醚、氫化雙酚F二縮水甘油醚、氫化雙酚E二縮水甘油醚、氫化雙酚A雙(丙二醇縮水甘油醚)醚、氫化雙酚A雙(乙二醇縮水甘油醚)醚、1,4-環己烷二羧酸二縮水甘油酯、1,4-環己烷二甲醇二縮水甘油醚等。亦可含有兩種以上該些化合物。 Examples of alicyclic epoxy compounds include: 3',4'-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 2,2-bis(hydroxymethyl) -1,2-epoxy-4-(2-oxiranyl)cyclohexane adduct of 1-butanol, ε-caprolactone modified 3',4'-epoxycyclohexyl Methyl 3',4'-epoxycyclohexanecarboxylate, 1,2-epoxy-4-vinylcyclohexane, butanetetracarboxylic acid tetrakis(3,4-epoxycyclohexyl Methyl) modified ε-caprolactone, 3,4-epoxycyclohexyl methyl methacrylate, hydrogenated bisphenol A diglycidyl ether, hydrogenated bisphenol F diglycidyl ether, hydrogenated bisphenol E diglycidyl ether Ether, hydrogenated bisphenol A bis(propylene glycol glycidyl ether) ether, hydrogenated bisphenol A bis(ethylene glycol glycidyl ether) ether, 1,4-cyclohexanedicarboxylic acid diglycidyl ester, 1,4-cyclohexanedicarboxylic acid diglycidyl ether Hexane dimethanol diglycidyl ether, etc. Two or more of these compounds may be contained.
就進一步提高與基底基板的密接性的觀點而言,本發明的樹脂組成物中的密接性改良劑的含量較佳為固體成分中的0.1重 量%以上,更佳為1重量%以上。另一方面,就進一步抑制由加熱引起的顏色變化的觀點而言,密接性改良劑的含量較佳為固體成分中的20重量%以下,更佳為10重量%以下。 From the viewpoint of further improving the adhesiveness with the base substrate, the content of the adhesiveness improving agent in the resin composition of the present invention is preferably 0.1% by weight in the solid content. % by weight or more, more preferably 1% by weight or more. On the other hand, from the viewpoint of further suppressing color change due to heating, the content of the adhesion improving agent is preferably 20% by weight or less in the solid content, more preferably 10% by weight or less.
本發明的樹脂組成物例如可藉由將所述樹脂、有機金屬化合物、光聚合起始劑或醌二疊氮化合物、溶媒及視需要的其他成分混合來製造。 The resin composition of the present invention can be produced, for example, by mixing the resin, an organic metal compound, a photopolymerization initiator or a quinonediazide compound, a solvent, and other optional components.
其次,對本發明的遮光膜進行說明。本發明的遮光膜是將所述本發明的樹脂組成物硬化而獲得。本發明的遮光膜除了後述的隔離壁(A-1)之外,可較佳地用作覆蓋基材用裝飾圖案等單片玻璃解決方案(One Glass Solution,OGS)型觸控面板中的遮光圖案。遮光膜的膜厚較佳為10μm以上。 Next, the light-shielding film of the present invention will be described. The light-shielding film of the present invention is obtained by curing the resin composition of the present invention. The light-shielding film of the present invention can be preferably used as a light-shielding film in a One Glass Solution (OGS) type touch panel, such as a decorative pattern covering a base material, in addition to the partition wall (A-1) described below. pattern. The film thickness of the light-shielding film is preferably 10 μm or more.
其次,舉例對本發明的遮光膜的製造方法進行說明。本發明的遮光膜的製造方法較佳為包括:製膜步驟,於基底基板上塗佈本發明的樹脂組成物並乾燥而獲得乾燥膜;曝光步驟,對獲得的乾燥膜進行圖案曝光;顯影步驟,溶解去除曝光後的乾燥膜中可溶於顯影液的部分;以及加熱步驟,藉由對顯影後的乾燥膜進行加熱而使其硬化。 Next, the manufacturing method of the light-shielding film of this invention is demonstrated using an example. The manufacturing method of the light-shielding film of the present invention preferably includes: a film forming step, coating the resin composition of the present invention on a base substrate and drying to obtain a dry film; an exposure step, subjecting the obtained dry film to pattern exposure; and a developing step. , dissolving and removing the portion of the exposed dry film that is soluble in the developer; and a heating step, hardening the developed dry film by heating it.
本發明的遮光膜的製造方法的特徵在於,於所述加熱步驟中,藉由於120℃以上且250℃以下的溫度下加熱顯影後的膜,使膜厚每10μm的OD值上升0.3以上。就進一步提高OD值的觀點而言,加熱步驟時的加熱溫度較佳為150℃以上,更佳為180℃以上。就抑制加熱的膜的裂紋發生的觀點而言,加熱步驟時的加熱溫 度較佳為250℃以下,更佳為240℃以下。加熱時間較佳為15分鐘~2小時。由本發明的樹脂組成物形成的膜於曝光時OD值低,並且在圖案形成後OD值上升,因此在曝光步驟中使其充分光硬化至底部,可獲得後述的具有較佳的錐角的隔離壁。此外,由於圖案形成後的OD值高,因此可獲得兼具高反射率與遮光性的隔離壁。 The method of manufacturing a light-shielding film of the present invention is characterized in that, in the heating step, the developed film is heated at a temperature of 120°C or more and 250°C or less, so that the OD value per 10 μm of film thickness is increased by 0.3 or more. From the viewpoint of further increasing the OD value, the heating temperature in the heating step is preferably 150°C or higher, more preferably 180°C or higher. From the viewpoint of suppressing the occurrence of cracks in the heated film, the heating temperature during the heating step The temperature is preferably 250°C or lower, more preferably 240°C or lower. The preferred heating time is 15 minutes to 2 hours. The film formed from the resin composition of the present invention has a low OD value during exposure, and the OD value increases after pattern formation. Therefore, by fully photohardening it to the bottom during the exposure step, isolation with a better taper angle described later can be obtained. wall. In addition, since the OD value after pattern formation is high, a partition wall having both high reflectivity and light-shielding properties can be obtained.
作為所述製膜步驟中的樹脂組成物的塗佈方法,例如可列舉狹縫塗佈法、旋塗法等。作為乾燥裝置,例如可列舉熱風烘箱或加熱板等。乾燥溫度較佳為80℃~120℃,乾燥時間較佳為1分鐘~15分鐘。 Examples of the coating method of the resin composition in the film forming step include slit coating, spin coating, and the like. Examples of the drying device include a hot air oven and a heating plate. The preferred drying temperature is 80°C to 120°C, and the preferred drying time is 1 minute to 15 minutes.
曝光步驟是藉由曝光使乾燥膜的必要部分光硬化,或者使乾燥膜的不需要的部分光分解,使乾燥膜的任意部分可溶於顯影液的步驟。於曝光步驟中,可經由具有規定的開口部的光罩進行曝光,亦可不使用光罩而使用雷射等直接描繪任意的圖案。 The exposure step is a step in which necessary parts of the dry film are photohardened by exposure, or unnecessary parts of the dry film are photodecomposed to make any part of the dry film soluble in the developer. In the exposure step, exposure can be performed through a mask having a predetermined opening, or an arbitrary pattern can be directly drawn using a laser or the like without using a mask.
作為曝光裝置,例如可列舉近接式曝光機(proximity exposure machine)。作為在曝光步驟中照射的活性光線,例如可列舉近紅外線、可見光線、紫外線,較佳為紫外線。另外,作為紫外線的光源,例如可列舉低壓水銀燈、高壓水銀燈、超高壓水銀燈、鹵素燈(halogen lamp)、殺菌燈等,但較佳為超高壓水銀燈。 Examples of the exposure device include a proximity exposure machine. Examples of active rays irradiated in the exposure step include near-infrared rays, visible rays, and ultraviolet rays, and ultraviolet rays are preferred. Examples of ultraviolet light sources include low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, halogen lamps, germicidal lamps, and the like. However, ultra-high-pressure mercury lamps are preferred.
曝光條件可根據曝光的乾燥膜的厚度適宜選擇。通常,較佳為使用輸出功率為1W/cm2~100mW/cm2的超高壓水銀燈,以1mJ/cm2~10,000mJ/cm2的曝光量進行曝光。 Exposure conditions can be appropriately selected according to the thickness of the exposed dry film. Generally, it is better to use an ultra-high-pressure mercury lamp with an output power of 1W/cm 2 ~100mW/cm 2 and perform exposure at an exposure dose of 1mJ/cm 2 ~10,000mJ/cm 2 .
顯影步驟是利用顯影液溶解去除曝光後的乾燥膜中的可溶於顯影液的部分,獲得僅殘存有不溶於顯影液的部分的、經圖案形成為任意的圖案形狀的乾燥膜(以下稱為加熱前圖案)的步驟。作為圖案形狀,例如可列舉格子狀、條紋狀等形狀。 The development step is to dissolve and remove the portion of the exposed dry film that is soluble in the developer by using the developer to obtain a dry film patterned into an arbitrary pattern shape in which only the portion insoluble in the developer remains (hereinafter referred to as pattern before heating). Examples of pattern shapes include grid-like shapes, striped shapes, and the like.
作為顯影方法,例如可列舉浸漬法、噴霧法、毛刷法等。 Examples of the development method include a dipping method, a spray method, a brush method, and the like.
作為顯影液,可適宜選擇可溶解曝光後的乾燥膜中不需要的部分的溶媒,較佳為以水為主成分的水溶液。例如於樹脂組成物含有具有羧基的聚合物的情況下,作為顯影液,較佳為鹼水溶液。作為鹼水溶液,例如可列舉:氫氧化鈉、氫氧化鉀、碳酸鈉、氫氧化鈣等無機鹼水溶液;四甲基氫氧化銨、三甲基苄基氫氧化銨、單乙醇胺、二乙醇胺等有機鹼水溶液等。該些中,就提高解析度的觀點而言,較佳為氫氧化鉀水溶液或氫氧化四甲銨水溶液。就提高顯影性的觀點而言,鹼水溶液的濃度較佳為0.05重量%以上,更佳為0.1重量%以上。另一方面,就抑制加熱前圖案的剝離或腐蝕的觀點而言,鹼水溶液的濃度較佳為5重量%以下,更佳為1重量%以下。為了容易進行步驟管理,顯影溫度較佳為20℃~50℃。 As the developer, a solvent that can dissolve unnecessary parts of the dried film after exposure can be appropriately selected, and an aqueous solution containing water as the main component is preferred. For example, when the resin composition contains a polymer having a carboxyl group, an alkali aqueous solution is preferred as the developer. Examples of alkali aqueous solutions include inorganic alkali aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium carbonate, and calcium hydroxide; organic alkali solutions such as tetramethylammonium hydroxide, trimethylbenzyl ammonium hydroxide, monoethanolamine, and diethanolamine; Alkaline aqueous solution, etc. Among these, from the viewpoint of improving resolution, a potassium hydroxide aqueous solution or a tetramethylammonium hydroxide aqueous solution is preferred. From the viewpoint of improving developability, the concentration of the alkali aqueous solution is preferably 0.05% by weight or more, more preferably 0.1% by weight or more. On the other hand, from the viewpoint of suppressing peeling or corrosion of the pattern before heating, the concentration of the alkali aqueous solution is preferably 5% by weight or less, more preferably 1% by weight or less. In order to facilitate step management, the development temperature is preferably 20°C to 50°C.
加熱步驟是對在顯影步驟中形成的加熱前圖案進行加熱硬化的步驟。作為加熱裝置,例如可列舉加熱板、烘箱等。較佳的加熱溫度及加熱時間如上所述。 The heating step is a step of heating and hardening the pre-heated pattern formed in the development step. Examples of the heating device include a hot plate, an oven, and the like. The preferred heating temperature and heating time are as described above.
其次,對本發明的帶隔離壁的基板進行說明。本發明的帶隔離壁的基板於基底基板上具有(A-1)經圖案形成的隔離壁(以下,有時記載為「隔離壁(A-1)」)。基底基板具有作為帶隔離壁的 基板中的支持體的功能。於隔離壁含有後述的顏色變換發光材料的畫素的情況下,具有抑制鄰接畫素間的光混色的功能。 Next, the substrate with partition walls of the present invention will be described. The substrate with partitions of the present invention has (A-1) patterned partitions (hereinafter, sometimes referred to as “partitions (A-1)”) on a base substrate. The base substrate has as a Function of the support in the substrate. When the partition wall contains a pixel of a color-converting luminescent material described below, it has the function of suppressing color mixing of light between adjacent pixels.
於本發明的帶隔離壁的基板中,隔離壁(A-1)的特徵在於:波長550nm下的厚度每10μm的反射率為20%~60%,厚度每10μm的OD值為1.0~3.0。藉由將反射率設為20%以上、OD值設為3.0以下,可利用(A-1)隔離壁側面的反射來提高顯示裝置的亮度。另一方面,藉由將反射率設為60%以下、OD值設為1.0以上,可抑制透過隔離壁(A-1)的光且抑制鄰接畫素間的光混色。 In the substrate with an isolation wall of the present invention, the isolation wall (A-1) is characterized by a reflectance of 20% to 60% per 10 μm of thickness at a wavelength of 550 nm, and an OD value of 1.0 to 3.0 per 10 μm of thickness. By setting the reflectivity to 20% or more and the OD value to 3.0 or less, the brightness of the display device can be improved by utilizing the reflection from the side of the (A-1) partition wall. On the other hand, by setting the reflectance to 60% or less and the OD value to 1.0 or more, it is possible to suppress the light transmitted through the partition wall (A-1) and suppress the color mixing of light between adjacent pixels.
圖1表示具有經圖案形成的隔離壁的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2。
FIG. 1 shows a cross-sectional view of an aspect of a substrate with isolation walls of the present invention having patterned isolation walls. There is a patterned
<基底基板> <Base substrate>
作為基底基板,例如可列舉:玻璃板、樹脂板、樹脂膜等。作為玻璃板的材質,較佳為無鹼玻璃。作為樹脂板及樹脂膜的材質,較佳為聚酯、(甲基)丙烯酸聚合物、透明聚醯亞胺、聚醚碸等。玻璃板及樹脂板的厚度較佳為1mm以下,更佳為0.8mm以下。樹脂膜的厚度較佳為100μm以下。 Examples of the base substrate include a glass plate, a resin plate, a resin film, and the like. As the material of the glass plate, alkali-free glass is preferred. As the material of the resin plate and the resin film, polyester, (meth)acrylic polymer, transparent polyimide, polyether styrene, etc. are preferred. The thickness of the glass plate and the resin plate is preferably 1 mm or less, more preferably 0.8 mm or less. The thickness of the resin film is preferably 100 μm or less.
<隔離壁(A-1)> <Partition Wall (A-1)>
隔離壁(A-1)的特徵在於:波長550nm下的厚度每10μm的反射率為20%~60%,OD值為1.0~3.0。此處,所謂隔離壁(A-1)的厚度,是指隔離壁(A-1)的與基底基板垂直的方向(高度方向)的長度。於圖1所示的帶隔離壁的基板的情況下,隔離壁2的
厚度用符號H表示。再者,將隔離壁(A-1)的與基底基板的水平方向的長度設為隔離壁(A-1)的寬度。於圖1所示的帶隔離壁的基板的情況下,隔離壁2的寬度用符號L表示。
The isolation wall (A-1) is characterized by a reflectance of 20% to 60% per 10 μm of thickness at a wavelength of 550 nm and an OD value of 1.0 to 3.0. Here, the thickness of the partition wall (A-1) refers to the length of the partition wall (A-1) in a direction perpendicular to the base substrate (height direction). In the case of the substrate with partition walls shown in FIG. 1 , the
本發明中,認為隔離壁側面的反射率分別有助於顯示裝置的亮度提高、隔離壁的遮光性的混色抑制。另一方面,認為每厚度單位的反射率及OD值不論厚度方向、寬度方向如何均相同,因此本發明中,著眼於隔離壁的每厚度單位的反射率及OD值。再者,如後所述,隔離壁(A-1)的厚度較佳為0.5μm~50μm,寬度較佳為5μm~40μm。因此,本發明中,選擇10μm作為隔離壁(A-1)的厚度的代表值,著眼於厚度每10μm的反射率及OD值。 In the present invention, it is considered that the reflectivity of the side surface of the partition wall contributes to the improvement of the brightness of the display device and the light-shielding property of the partition wall to suppress color mixing. On the other hand, the reflectance and OD value per thickness unit are considered to be the same regardless of the thickness direction and the width direction. Therefore, the present invention focuses on the reflectance and OD value per thickness unit of the partition wall. Furthermore, as will be described later, the thickness of the partition wall (A-1) is preferably 0.5 μm to 50 μm, and the width is preferably 5 μm to 40 μm. Therefore, in the present invention, 10 μm is selected as a representative value of the thickness of the partition wall (A-1), and attention is paid to the reflectance and OD value per 10 μm of thickness.
若厚度每10μm的反射率未滿20%,則隔離壁側面的反射變小,顯示裝置的亮度變得不充分。厚度每10μm的反射率較佳為30%以上,更佳為35%以上。反射率越高,隔離壁側面的反射越大,因此可提高顯示裝置的亮度,但若反射率超過60%,則於鄰接畫素間發生光混色。厚度每10μm的反射率更佳為44%以下。 If the reflectance per 10 μm of thickness is less than 20%, the reflection from the side surfaces of the partition walls becomes small, and the brightness of the display device becomes insufficient. The reflectance per 10 μm of thickness is preferably 30% or more, more preferably 35% or more. The higher the reflectivity, the greater the reflection from the side of the partition wall, thus improving the brightness of the display device. However, if the reflectivity exceeds 60%, light color mixing will occur between adjacent pixels. The reflectivity per 10 μm of thickness is preferably 44% or less.
另外,若厚度每10μm的OD值未滿1.0,則於鄰接畫素間發生光混色。厚度每10μm的OD值較佳為1.5以上,更佳為2.0以上。另一方面,若厚度每10μm的OD值超過3.0,則隔離壁側面的反射變小,顯示裝置的亮度變得不充分。厚度每10μm的OD值更佳為2.5以下。 In addition, if the OD value per 10 μm of thickness is less than 1.0, light color mixing will occur between adjacent pixels. The OD value per 10 μm of thickness is preferably 1.5 or more, more preferably 2.0 or more. On the other hand, if the OD value per 10 μm of thickness exceeds 3.0, reflection from the side surfaces of the partition walls becomes small, and the brightness of the display device becomes insufficient. The OD value per 10 μm of thickness is more preferably 2.5 or less.
關於隔離壁(A-1)的波長550nm下的厚度每10μm的反射率,針對厚度10μm的隔離壁(A-1),可自上表面使用分光測 色計(例如,柯尼卡美能達(Konica Minolta)(股)製造的CM-2600d),藉由包含鏡面反射(Specular Component Included,SCI)模式測定。其中,於無法確保對於測定而言充分的面積的情況下,或無法採取厚度10μm的測定樣品的情況下,於隔離壁(A-1)的組成已知的情況下,亦可製作與隔離壁(A-1)相同組成的厚度10μm的整體膜,代替隔離壁(A-1),對該整體膜同樣地測定反射率,藉此可求出厚度每10μm的反射率。例如,除了使用形成了隔離壁(A-1)的材料,並將厚度設為10μm且不進行圖案形成以外,藉由與隔離壁(A-1)的形成相同的加工條件製作整體膜,對於所獲得的整體膜,亦可自上表面同樣地測定反射率。 Regarding the reflectance per 10 μm of thickness of the partition wall (A-1) at a wavelength of 550 nm, spectrometry can be measured from the upper surface of the partition wall (A-1) with a thickness of 10 μm. A colorimeter (for example, CM-2600d manufactured by Konica Minolta Co., Ltd.) measures in the Specular Component Included (SCI) mode. However, when an area sufficient for measurement cannot be secured, or when a measurement sample with a thickness of 10 μm cannot be collected, the partition wall (A-1) can also be fabricated if the composition of the partition wall (A-1) is known. (A-1) A whole film with a thickness of 10 μm of the same composition is used instead of the partition wall (A-1). By measuring the reflectance in the same manner as the whole film, the reflectance per 10 μm in thickness can be determined. For example, except that the material on which the partition walls (A-1) are formed is used, the thickness is set to 10 μm, and no patterning is performed, the entire film is produced under the same processing conditions as those for forming the partition walls (A-1). The reflectance of the obtained whole film can also be measured similarly from the upper surface.
關於隔離壁(A-1)的每厚度10μm的OD值,針對厚度10μm的隔離壁(A-1),從上表面使用光學濃度計(例如愛色麗(X-rite)公司製造的361T(視覺(visual)))測定入射光及透過光的強度,可藉由下述式(1)算出。其中,於測定中無法確保充分的面積的情況下、或者於無法採取厚度10μm的測定樣品的情況下,於隔離壁(A-1)的組成已知的情況下,亦可與反射率的測定同樣地,製作與隔離壁(A-1)相同組成的厚度10μm的整體膜,代替隔離壁(A-1),對整體膜同樣地測定OD值,藉此求出厚度每10μm的OD值。 Regarding the OD value per 10 μm thickness of the partition wall (A-1), for the partition wall (A-1) with a thickness of 10 μm, use an optical densitometer (for example, 361T manufactured by X-rite Corporation) from the upper surface. The intensity of incident light and transmitted light is measured visually and can be calculated by the following formula (1). However, when a sufficient area cannot be secured for measurement, or when a measurement sample with a thickness of 10 μm cannot be collected, when the composition of the partition wall (A-1) is known, it can also be combined with the measurement of reflectance. Similarly, a whole film with a thickness of 10 μm having the same composition as the partition wall (A-1) was produced. Instead of the partition wall (A-1), the OD value of the whole film was measured in the same manner to determine the OD value per 10 μm thickness.
OD值=log10(I0/I)…(1) OD value=log10(I 0 /I)…(1)
I0:入射光強度 I 0 : incident light intensity
I:透過光強度。 I: transmitted light intensity.
再者,作為用於使反射率及OD值為所述範圍內的方法,例如可列舉使隔離壁(A-1)為後述的較佳組成等。 In addition, as a method for making the reflectance and the OD value fall within the above range, for example, the partition wall (A-1) has a preferable composition described below.
隔離壁(A-1)的錐角較佳為45°~110°。所謂隔離壁(A-1)的錐角,是指隔離壁剖面的側邊與底邊所成的角度。於圖1所示的帶隔離壁的基板的情況下,隔離壁2的錐角用符號θ表示。藉由使錐角為45°以上,隔離壁(A-1)的上部與底部的寬度之差變小,可容易地使隔離壁(A-1)的寬度形成在後述的較佳的範圍內。錐角更佳為70°以上。另一方面,藉由使錐角為110°以下,於藉由噴墨塗佈形成後述的(B)含有顏色變換發光材料的畫素時,可抑制墨水的潰決,提高噴墨塗佈性。此處,所謂墨水的潰決,是指墨水越過隔離壁而混入鄰接的畫素部分的現象。錐角更佳為95°以下。隔離壁(A-1)的錐角可藉由使用掃描式電子顯微鏡(FE-SEM(例如,日立製作所(股)製造的S-4800)),以加速電壓3.0kV、倍率2,500倍觀察隔離壁(A-1)的任意剖面,測定隔離壁(A-1)的剖面的側邊與底邊所成的角度來求出。
The cone angle of the partition wall (A-1) is preferably 45°~110°. The so-called taper angle of the partition wall (A-1) refers to the angle formed by the side edge and the bottom edge of the partition wall section. In the case of the substrate with partition walls shown in FIG. 1 , the taper angle of the
再者,作為用於使隔離壁(A-1)的錐角為所述範圍內的方法,例如可列舉將隔離壁(A-1)設為後述的較佳組成、使用所述本發明的樹脂組成物形成等。 In addition, as a method for making the taper angle of the partition wall (A-1) fall within the above range, for example, setting the partition wall (A-1) to a preferable composition described below and using the above-mentioned method of the present invention can be mentioned. Resin composition formation, etc.
關於隔離壁(A-1)的厚度,於帶隔離壁的基板具有後述的(B)含有顏色變換發光材料的畫素的情況下,較佳為大於所述畫 素的厚度。具體而言,隔離壁(A-1)的厚度較佳為0.5μm以上,更佳為10μm以上。另一方面,就效率更良好地取出畫素底部的發光的觀點而言,隔離壁(A-1)的厚度較佳為50μm以下,更佳為20μm以下。另外,隔離壁(A-1)的寬度較佳為為了利用隔離壁側面的光反射來進一步提高亮度且進一步抑制漏光所引起的鄰接畫素的光混色而言充分的寬度。具體而言,隔離壁的寬度較佳為5μm以上,更佳為15μm以上。另一方面,就更多地確保畫素的發光區域且進一步提高亮度的觀點而言,隔離壁(A-1)的寬度較佳為50μm以下,更佳為40μm以下。 The thickness of the partition wall (A-1) is preferably larger than the thickness of the partition wall (B) when the substrate with the partition wall has a pixel containing a color-converting luminescent material (B) described below. The thickness of the element. Specifically, the thickness of the partition wall (A-1) is preferably 0.5 μm or more, more preferably 10 μm or more. On the other hand, from the viewpoint of extracting the light emitted from the bottom of the pixel more efficiently, the thickness of the partition wall (A-1) is preferably 50 μm or less, and more preferably 20 μm or less. In addition, the width of the partition wall (A-1) is preferably a width sufficient to further increase the brightness by utilizing light reflection from the side surfaces of the partition wall and to further suppress color mixing of light in adjacent pixels due to light leakage. Specifically, the width of the partition wall is preferably 5 μm or more, more preferably 15 μm or more. On the other hand, from the viewpoint of ensuring more of the light-emitting area of the pixel and further improving the brightness, the width of the partition wall (A-1) is preferably 50 μm or less, and more preferably 40 μm or less.
隔離壁(A-1)具有與圖像顯示裝置的畫面尺寸相對應的規定畫素數的重覆圖案。作為圖像顯示裝置的畫素數,例如可列舉橫4000個、縱2000個。畫素數影響所顯示的圖像的解析度(精細度)。因此,需要形成與所要求的圖像的解析度及圖像顯示裝置的畫面尺寸相對應的數量的畫素,較佳為與其一併決定隔離壁的圖案形成尺寸。 The partition wall (A-1) has a repeating pattern of a predetermined number of pixels corresponding to the screen size of the image display device. The number of pixels of the image display device is, for example, 4000 horizontally and 2000 vertically. The number of pixels affects the resolution (fineness) of the displayed image. Therefore, it is necessary to form a number of pixels corresponding to the required image resolution and the screen size of the image display device, and it is preferable to determine the pattern formation size of the partition wall together with these.
隔離壁(A-1)較佳為含有樹脂、白色顏料、以及由選自由氧化鈀、氧化鉑、氧化金、氧化銀、鈀、鉑、金及銀所組成的群組中的至少一種金屬氧化物或金屬構成的粒子(以下,有時記載為「金屬氧化物粒子或金屬粒子」)。樹脂具有提高隔離壁的耐裂紋性及耐光性的功能。白色顏料具有進一步提高隔離壁的反射率的功能。金屬氧化物粒子或金屬粒子具有調整OD值、抑制鄰接畫素中的光混色的功能。 The partition wall (A-1) preferably contains resin, white pigment, and at least one metal oxide selected from the group consisting of palladium oxide, platinum oxide, gold oxide, silver oxide, palladium, platinum, gold and silver. Particles made of materials or metals (hereinafter, sometimes described as "metal oxide particles or metal particles"). Resin has the function of improving the crack resistance and light resistance of the partition wall. The white pigment has the function of further improving the reflectivity of the partition wall. Metal oxide particles or metal particles have the function of adjusting the OD value and suppressing light color mixing in adjacent pixels.
樹脂與白色顏料如作為構成樹脂組成物的材料於上文說明般。就提高熱處理中的隔離壁的耐裂紋性的觀點而言,隔離壁(A-1)中的樹脂的含量較佳為10重量%以上,更佳為20重量%以上。另一方面,就提高耐光性的觀點而言,隔離壁(A-1)中的樹脂的含量較佳為60重量%以下,更佳為50重量%以下。 The resin and white pigment are as described above as materials constituting the resin composition. From the viewpoint of improving the crack resistance of the partition wall during heat treatment, the content of the resin in the partition wall (A-1) is preferably 10% by weight or more, more preferably 20% by weight or more. On the other hand, from the viewpoint of improving light resistance, the content of the resin in the partition wall (A-1) is preferably 60% by weight or less, more preferably 50% by weight or less.
就進一步提高反射率的觀點而言,隔離壁(A-1)中的白色顏料的含量較佳為20重量%以上,更佳為30重量%以上。另一方面,就提高隔離壁的表面平滑性的觀點而言,隔離壁(A-1)中的白色顏料的含量較佳為60重量%以下,更佳為55重量%以下。 From the viewpoint of further improving the reflectance, the content of the white pigment in the partition wall (A-1) is preferably 20% by weight or more, more preferably 30% by weight or more. On the other hand, from the viewpoint of improving the surface smoothness of the partition wall, the content of the white pigment in the partition wall (A-1) is preferably 60% by weight or less, more preferably 55% by weight or less.
金屬氧化物粒子或金屬粒子是指藉由所述樹脂組成物中的有機金屬化合物於曝光步驟及/或加熱步驟中分解.凝聚而產生的黑色粒子或黃色粒子。就將反射率及OD調整為所述範圍來進一步抑制鄰接畫素中的光混色的觀點而言,隔離壁(A-1)中的金屬氧化物粒子或金屬粒子的含量較佳為0.2重量%以上,更佳為0.5重量%以上。另一方面,就將反射率及OD調整為所述範圍的觀點而言,隔離壁(A-1)中的金屬氧化物粒子或金屬粒子的含量較佳為5重量%以下,更佳為3重量%以下。 Metal oxide particles or metal particles are obtained by decomposing the organic metal compounds in the resin composition during the exposure step and/or heating step. Black particles or yellow particles produced by agglomeration. From the viewpoint of adjusting the reflectance and OD to the above ranges to further suppress light color mixing in adjacent pixels, the content of metal oxide particles or metal particles in the partition wall (A-1) is preferably 0.2% by weight. or more, more preferably 0.5% by weight or more. On the other hand, from the viewpoint of adjusting the reflectance and OD to the above ranges, the content of the metal oxide particles or metal particles in the partition wall (A-1) is preferably 5% by weight or less, more preferably 3% by weight. weight% or less.
隔離壁(A-1)較佳為進一步含有防液化合物。藉由含有防液化合物,可賦予隔離壁(A-1)防液性能,例如於形成後述的(B)含有顏色變換發光材料的畫素時,可容易地在各個畫素上分別塗佈組成不同的顏色變換發光材料。防液化合物如作為構成樹脂組成物的材料於上文所述般。 It is preferable that the partition wall (A-1) further contains a liquid-proof compound. By containing a liquid-repellent compound, the partition wall (A-1) can be provided with liquid-repellent properties. For example, when forming (B) pixels containing a color-converting luminescent material described later, the composition can be easily coated on each pixel. Different color changing luminous materials. The liquid-repellent compound is as described above as a material constituting the resin composition.
就提高隔離壁的防液性能、提高噴墨塗佈性的觀點而言,隔離壁(A-1)中的防液化合物的含量較佳為0.01重量%以上,更佳為0.1重量%以上。另一方面,就提高與樹脂或白色顏料的相容性的觀點而言,隔離壁(A-1)中的防液化合物的含量較佳為10重量%以下,更佳為5重量%以下。 From the viewpoint of improving the liquid-repellent performance of the partition wall and improving the inkjet coatability, the content of the liquid-repellent compound in the partition wall (A-1) is preferably 0.01% by weight or more, more preferably 0.1% by weight or more. On the other hand, from the viewpoint of improving compatibility with resin or white pigment, the content of the liquid-repellent compound in the partition wall (A-1) is preferably 10% by weight or less, more preferably 5% by weight or less.
就提高噴墨塗佈性且使顏色變換發光材料的分塗容易的觀點而言,隔離壁(A-1)的相對於丙二醇單甲醚乙酸酯的表面接觸角較佳為10°以上,更佳為20°以上,進而佳為40°以上。另一方面,就提高隔離壁與基底基板的密接性的觀點而言,隔離壁(A-1)的表面接觸角較佳為70°以下,更佳為60°以下。此處,隔離壁(A-1)的表面接觸角可依據JIS R3257(製定年月日=1999/04/20)中規定的基板玻璃表面的潤濕性試驗方法,對隔離壁上部進行測定。再者,作為使隔離壁(A-1)的表面接觸角為所述範圍內的方法,例如可列舉使用所述防液化合物的方法等。 From the viewpoint of improving inkjet coating properties and making it easier to separate the color-changing luminescent material, the surface contact angle of the partition (A-1) with respect to propylene glycol monomethyl ether acetate is preferably 10° or more, More preferably, it is 20° or more, and still more preferably, it is 40° or more. On the other hand, from the viewpoint of improving the adhesion between the partition wall and the base substrate, the surface contact angle of the partition wall (A-1) is preferably 70° or less, more preferably 60° or less. Here, the surface contact angle of the partition wall (A-1) can be measured on the upper part of the partition wall in accordance with the wettability test method of the substrate glass surface specified in JIS R3257 (enactment date = 1999/04/20). In addition, as a method of making the surface contact angle of the partition wall (A-1) fall within the said range, the method of using the said liquid repellent compound etc. are mentioned, for example.
作為於基底基板上圖案形成隔離壁(A-1)的方法,就圖案形狀的調整容易的方面而言,較佳為感光性糊劑法。作為利用感光性糊劑法圖案形成隔離壁的方法,例如較佳為如下方法,包括:塗佈步驟,於基底基板上塗佈所述樹脂組成物並乾燥而獲得乾燥膜;曝光步驟,根據所希望的圖案形狀對所得的乾燥膜進行圖案曝光;顯影步驟,溶解去除曝光後的乾燥膜中的可溶於顯影液的部分;以及加熱步驟,使顯影後的隔離壁硬化。樹脂組成物較佳為具有正型或負型的感光性。圖案曝光可經由具有規定的開口部的光罩進行 曝光,亦可不使用光罩,而使用雷射光等直接描繪任意的圖案。再者,於帶隔離壁的基板具有後述的遮光隔離壁(A-2)的情況下,可於遮光隔離壁(A-2)上同樣地圖案形成隔離壁(A-1)。關於各步驟,作為遮光膜的製造方法,如上文說明般。 As a method of patterning the partition walls (A-1) on the base substrate, the photosensitive paste method is preferable in terms of ease of adjustment of the pattern shape. As a method for pattern forming partition walls using a photosensitive paste method, for example, the following method is preferred, including: a coating step of coating the resin composition on a base substrate and drying to obtain a dry film; and an exposure step of The resulting dry film is pattern-exposed into a desired pattern shape; a development step is used to dissolve and remove the portion of the exposed dry film that is soluble in the developer; and a heating step is used to harden the developed partition wall. The resin composition preferably has positive or negative photosensitivity. Pattern exposure can be performed through a photomask having a prescribed opening. For exposure, you can also use laser light to directly draw any pattern without using a mask. Furthermore, when the substrate with the partition wall has a light-shielding partition wall (A-2) described below, the partition wall (A-1) can be formed in a similar pattern on the light-shielding partition wall (A-2). Regarding each step, the method for manufacturing the light-shielding film is as described above.
<遮光隔離壁(A-2)> <Light-shielding partition wall (A-2)>
本發明的帶隔離壁的基板較佳為於所述基底基板與(A-1)經圖案形成的隔離壁之間進一步具有(A-2)厚度每1.0μm的OD值為0.5以上的、經圖案形成的隔離壁(以下,有時記載為「遮光隔離壁(A-2)」)。藉由具有遮光隔離壁(A-2),可提高遮光性,抑制顯示裝置中的背光的漏光,獲得高對比度且鮮明的圖像。 The substrate with isolation walls of the present invention preferably further has (A-2) an OD value of 0.5 or more per 1.0 μm of thickness between the base substrate and (A-1) patterned isolation walls. Patterned partition wall (hereinafter, may be described as "light-shielding partition wall (A-2)"). By having the light-shielding partition wall (A-2), the light-shielding property can be improved, light leakage of the backlight in the display device can be suppressed, and a high-contrast and clear image can be obtained.
圖9示出表示具有遮光隔離壁的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2及遮光隔離壁10,於由隔離壁2及遮光隔離壁10隔開的區域排列畫素3。
FIG. 9 is a cross-sectional view showing an aspect of the partition-walled substrate of the present invention having a light-shielding partition wall. There are patterned
遮光隔離壁(A-2)的厚度每1.0μm的OD值為0.5以上。此處,遮光隔離壁(A-2)的厚度如後所述較佳為0.5μm~10μm。因此,本發明中,選擇1.0μm作為遮光隔離壁(A-2)的厚度的代表值,著眼於厚度每1.0μm的OD值。藉由將厚度每1.0μm的OD值設為0.5以上,可進一步提高遮光性,獲得更高對比度且鮮明的圖像。厚度每1.0μm的OD值更佳為1.0以上。另一方面,較佳為厚度每1.0μm的OD值為4.0以下,可提高圖案加工性。厚度每1.0μm的OD值更佳為3.0以下。遮光隔離壁(A-2)的OD 值可與所述隔離壁(A-1)的OD值同樣地測定。再者,作為用以使OD值為所述範圍內的方法,例如可列舉將遮光隔離壁(A-2)設為後述的較佳的組成等。 The OD value per 1.0 μm of thickness of the light-shielding partition wall (A-2) is 0.5 or more. Here, as described later, the thickness of the light-shielding partition wall (A-2) is preferably 0.5 μm to 10 μm. Therefore, in the present invention, 1.0 μm is selected as a representative value of the thickness of the light-shielding partition wall (A-2), and attention is paid to the OD value per 1.0 μm of thickness. By setting the OD value per 1.0 μm of thickness to 0.5 or more, the light-shielding property can be further improved and a higher-contrast, clear image can be obtained. The OD value per 1.0 μm of thickness is more preferably 1.0 or more. On the other hand, the OD value per 1.0 μm of thickness is preferably 4.0 or less, so that pattern processability can be improved. The OD value per 1.0 μm of thickness is more preferably 3.0 or less. OD of light-shielding partition wall (A-2) The value can be measured in the same manner as the OD value of the partition wall (A-1). Furthermore, as a method for making the OD value fall within the above range, for example, the light-shielding partition wall (A-2) has a preferable composition described below.
就提高遮光性的觀點而言,遮光隔離壁(A-2)的厚度較佳為0.5μm以上,更佳為1.0μm以上。另一方面,就提高平坦性的觀點而言,遮光隔離壁(A-2)的厚度較佳為10μm以下,更佳為5μm以下。另外,遮光隔離壁(A-2)的寬度較佳為與所述隔離壁(A-1)為相同程度。 From the viewpoint of improving light-shielding properties, the thickness of the light-shielding partition wall (A-2) is preferably 0.5 μm or more, more preferably 1.0 μm or more. On the other hand, from the viewpoint of improving flatness, the thickness of the light-shielding partition wall (A-2) is preferably 10 μm or less, more preferably 5 μm or less. In addition, the width of the light-shielding partition wall (A-2) is preferably the same as that of the partition wall (A-1).
遮光隔離壁(A-2)較佳為含有樹脂及黑色顏料。樹脂具有提高隔離壁的耐裂紋性及耐光性的功能。黑色顏料具有吸收入射的光且減少射出光的功能。 The light-shielding partition wall (A-2) preferably contains resin and black pigment. Resin has the function of improving the crack resistance and light resistance of the partition wall. Black pigment has the function of absorbing incident light and reducing emitted light.
作為樹脂,例如可列舉:環氧樹脂、(甲基)丙烯酸聚合物、聚胺基甲酸酯、聚酯、聚醯亞胺、聚烯烴、聚矽氧烷等。亦可含有兩種以上該些化合物。該些中,就耐熱性及耐溶媒性優異的方面而言,較佳為聚醯亞胺。 Examples of the resin include epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyimide, polyolefin, polysiloxane, and the like. Two or more of these compounds may be contained. Among these, polyimide is preferred in terms of excellent heat resistance and solvent resistance.
作為黑色顏料,可列舉作為所述樹脂組成物中的黑色顏料而例示的顏料、氧化鈀、氧化鉑、氧化金、氧化銀等。就具有高遮光性的方面而言,較佳為選自氮化鈦、氮化鋯、碳黑、氧化鈀、氧化鉑、氧化金及氧化銀中的黑色顏料。 Examples of the black pigment include the pigments exemplified as the black pigment in the resin composition, palladium oxide, platinum oxide, gold oxide, silver oxide, and the like. In terms of having high light-shielding properties, a black pigment selected from the group consisting of titanium nitride, zirconium nitride, carbon black, palladium oxide, platinum oxide, gold oxide and silver oxide is preferred.
作為於基底基板上對遮光隔離壁(A-2)進行圖案形成的方法,較佳為如下方法:例如使用日本專利特開2015-1654號公報中記載的感光性材料,與所述隔離壁(A-1)同樣地藉由感光性糊劑 法進行圖案形成。 As a method of patterning the light-shielding partitions (A-2) on the base substrate, a method is preferably as follows: for example, using the photosensitive material described in Japanese Patent Application Laid-Open No. 2015-1654, and combining the partitioning walls ( A-1) Similarly with photosensitive paste method for pattern formation.
本發明的帶隔離壁的基板較佳為進而具有由所述隔離壁(A-1)隔開排列的(B)含有顏色變換發光材料的畫素(以下,有時記載為「畫素(B)」)。畫素(B)具有藉由變換入射光的波長區域的至少一部分並放出與入射光不同的波長區域的出射光而可進行彩色顯示的功能。 The substrate with partitions of the present invention preferably further includes (B) pixels containing a color-converting luminescent material (hereinafter, sometimes described as "pixels (B)") arranged separated by the partitions (A-1). )"). The pixel (B) has a function of enabling color display by converting at least part of the wavelength range of incident light and emitting outgoing light in a wavelength range different from that of the incident light.
圖2表示具有經圖案形成的隔離壁(A-1)與含有顏色變換發光材料的畫素(B)的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2,於由隔離壁2隔開的區域排列畫素3。
2 shows a cross-sectional view of an aspect of a substrate with isolation walls of the present invention having patterned isolation walls (A-1) and pixels (B) containing a color-changing luminescent material. There is a patterned
顏色變換材料較佳為含有選自無機螢光體及有機螢光體中的螢光體。 The color conversion material preferably contains a phosphor selected from inorganic phosphors and organic phosphors.
本發明的帶隔離壁的基板例如可將發出藍色光的背光與形成於薄膜電晶體(Thin Film Transistor,TFT)上的液晶及畫素(B)組合,作為顯示裝置使用。該情況下,較佳為在與紅色畫素對應的區域中含有藉由藍色的激發光被激發而發出紅色的螢光的紅色用螢光體。同樣地,較佳為在與綠色畫素對應的區域中含有藉由藍色的激發光被激發而發出綠色的螢光的綠色用螢光體。較佳為在與藍色畫素對應的區域中不含有螢光體。 The substrate with partition walls of the present invention can be used as a display device by combining a backlight that emits blue light with a liquid crystal and a pixel (B) formed on a thin film transistor (TFT). In this case, it is preferable to include a red phosphor that is excited by blue excitation light and emits red fluorescence in a region corresponding to the red pixel. Similarly, it is preferable to include a green phosphor that is excited by blue excitation light and emits green fluorescence in a region corresponding to the green pixel. It is preferable that the area corresponding to the blue pixel does not contain phosphor.
亦可將本發明的帶隔離壁的基板用於如下方式的顯示裝置,所述方式的顯示裝置是將於基板上由白色的隔離壁分離的、與各畫素對應的藍色LED排列多個而成的藍色微LED作為背光使 用。各畫素的導通(ON)/斷開(OFF)可藉由藍色微LED的ON/OFF來實現,不需要液晶。本發明的帶隔離壁的基板亦可使用分離各畫素的隔離壁、以及於背光中分離藍色微LED的隔離壁中的任一者。 The substrate with partition walls of the present invention can also be used in a display device in which a plurality of blue LEDs corresponding to each pixel are arranged on the substrate separated by white partition walls. The blue micro-LED is used as a backlight use. The ON/OFF of each pixel can be realized by the ON/OFF of the blue micro-LED, and no liquid crystal is required. The substrate with isolation walls of the present invention may also use either isolation walls that separate pixels or isolation walls that separate blue micro-LEDs in the backlight.
作為無機螢光體,較佳為藉由藍色的激發光發出綠色或紅色等各種顏色的無機螢光體、即、藉由波長400nm~500nm的激發光被激發、發光光譜在500nm~700nm的區域具有峰值的無機螢光體。作為所述無機螢光體,例如可列舉:釔鋁石榴石(Yttrium Aluminum Garnet,YAG)系螢光體、鋱鋁石榴石(Terbium Aluminium Garnet,TAG)系螢光體、矽鋁氮氧化物(Sialon)系螢光體、Mn4+活性氟化物錯合物螢光體、被稱為量子點的無機螢光體等。亦可使用兩種以上該些化合物。該些中,較佳為量子點。與其他螢光體相比,量子點的平均粒徑小,因此可使(B)畫素的表面平滑化,抑制表面的光散射,因此可進一步提高光的取出效率,進一步提高亮度。 The inorganic phosphor is preferably one that emits various colors such as green or red by blue excitation light, that is, one that is excited by excitation light with a wavelength of 400 nm to 500 nm and has an emission spectrum of 500 nm to 700 nm. Inorganic phosphor with peak area. Examples of the inorganic phosphor include: yttrium aluminum garnet (YAG) based phosphor, terbium aluminum garnet (TAG) based phosphor, silicon aluminum oxynitride ( Sialon) based phosphor, Mn 4+ active fluoride complex phosphor, inorganic phosphor called quantum dots, etc. Two or more of these compounds may also be used. Among these, quantum dots are preferred. Compared with other phosphors, the average particle size of quantum dots is small, so the surface of the (B) pixel can be smoothed and light scattering on the surface can be suppressed, so the light extraction efficiency can be further improved and the brightness can be further improved.
作為量子點,例如可列舉包含II-IV族、III-V族、IV-VI族、IV族的半導體等的粒子。作為該些無機半導體,例如可列舉:Si、Ge、Sn、Se、Te、B、C(包含金剛石)、P、BN、BP、BAs、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、ZnO、ZnS、ZnSe、ZnTe、CdS、CdSe、CdSeZn、CdTe、HgS、HgSe、HgTe、BeS、BeSe、BeTe、MgS、MgSe、GeS、GeSe、GeTe、SnS、SnSe、SnTe、PbO、PbS、PbSe、PbTe、CuF、CuCl、CuBr、CuI、Si3N4、Ge3N4、Al2O3等。亦可使用兩種以上該些化合 物。 Examples of quantum dots include particles including Group II-IV, Group III-V, Group IV-VI, and Group IV semiconductors. Examples of these inorganic semiconductors include: Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si 3 N 4 , Ge 3 N 4 , Al 2 O 3 , etc. Two or more of these compounds may also be used.
量子點亦可包含p型摻雜劑或n型摻雜劑。另外,量子點亦可具有核殼結構。於核殼結構中,可於殼周圍根據目的形成任意的適當的功能層(單層或多層),亦可對殼表面進行表面處理及/或化學修飾。 Quantum dots may also contain p-type dopants or n-type dopants. In addition, quantum dots may also have a core-shell structure. In the core-shell structure, any appropriate functional layer (single layer or multiple layers) can be formed around the shell according to the purpose, and the surface of the shell can also be surface treated and/or chemically modified.
作為量子點的形狀,例如可列舉:球狀、柱狀、鱗片狀、板狀、不定形等。量子點的平均粒徑可根據所需的發光波長來任意選擇,較佳為1nm~30nm。若量子點的平均粒徑為1nm~10nm,則於藍色、綠色及紅色的各自中可使發光光譜中的峰值更尖銳。量子點的平均粒徑較佳為2nm以上,較佳為8nm以下。例如,於量子點的平均粒徑為約2nm的情況下發出藍色光,於約3nm的情況下發出綠色光,於約6nm的情況下發出紅色光。量子點的平均粒徑可藉由動態光散射法來測定。作為平均粒徑的測定裝置,可列舉動態光散射光度計DLS-8000(大塚電子(股)製造)等。 Examples of the shape of quantum dots include spherical, columnar, scaly, plate-shaped, amorphous, and the like. The average particle size of the quantum dots can be selected arbitrarily according to the required emission wavelength, preferably 1nm~30nm. If the average particle diameter of the quantum dots is 1nm~10nm, the peaks in the luminescence spectrum can be sharper in each of blue, green and red. The average particle diameter of the quantum dots is preferably 2 nm or more, and more preferably 8 nm or less. For example, when the average particle diameter of a quantum dot is about 2 nm, it emits blue light, when it emits green light, when it is about 3 nm, and when it emits red light, it emits red light. The average particle size of quantum dots can be measured by dynamic light scattering. Examples of a measuring device for the average particle diameter include dynamic light scattering photometer DLS-8000 (manufactured by Otsuka Electronics Co., Ltd.).
作為有機螢光體,較佳為藉由藍色的激發光而發出綠色或紅色等各種顏色的螢光體。作為發出紅色的螢光的螢光體,可列舉具有下述結構式(8)所表示的基本骨架的吡咯亞甲基衍生物,作為發出綠色的螢光的螢光體,可列舉具有下述結構式(9)所表示的基本骨架的吡咯亞甲基衍生物等。除此以外,可列舉藉由取代基的選擇而發出紅色或綠色的螢光的苝系衍生物、卟啉系衍生物、噁嗪系衍生物、吡嗪系衍生物等。亦可含有兩種以上該些化合物。該些中,由於量子產率高,因此亦較佳為吡咯亞甲基衍生物。吡咯亞 甲基衍生物例如可藉由日本專利特開2011-241160號公報中記載的方法而獲得。 As the organic phosphor, a phosphor that emits various colors such as green or red by blue excitation light is preferred. Examples of phosphors that emit red fluorescence include pyrromethene derivatives having a basic skeleton represented by the following structural formula (8), and examples of phosphors that emit green fluorescence include the following compounds: Pyrromethene derivatives with a basic skeleton represented by structural formula (9), etc. In addition, perylene-based derivatives, porphyrin-based derivatives, oxazine-based derivatives, pyrazine-based derivatives, etc. that emit red or green fluorescence depending on the selection of substituents can be cited. Two or more of these compounds may be contained. Among these, pyrromethene derivatives are also preferred because of their high quantum yield. Pyrroia The methyl derivative can be obtained, for example, by the method described in Japanese Patent Application Laid-Open No. 2011-241160.
有機螢光體可溶於溶媒中,因此可容易地形成所需厚度的畫素(B)。 The organic phosphor is soluble in the solvent, so the pixel (B) can be easily formed to a desired thickness.
就提高顏色特性的觀點而言,畫素(B)的厚度較佳為0.5μm以上,更佳為1μm以上。另一方面,就顯示裝置的薄型化或曲面加工性的觀點而言,畫素(B)的厚度較佳為30μm以下,更佳為20μm以下。 From the viewpoint of improving color characteristics, the thickness of the pixel (B) is preferably 0.5 μm or more, more preferably 1 μm or more. On the other hand, from the viewpoint of thinning the display device or curved surface workability, the thickness of the pixel (B) is preferably 30 μm or less, more preferably 20 μm or less.
各畫素(B)的大小通常為20μm~200μm左右。 The size of each pixel (B) is usually about 20 μm to 200 μm.
畫素(B)較佳為由隔離壁(A-1)隔開而排列。藉由於畫素與畫素之間設置隔離壁,可進一步抑制發出的光的擴散或混色。 The pixels (B) are preferably separated and arranged by the partition wall (A-1). By providing isolation walls between pixels, the diffusion or color mixing of the emitted light can be further suppressed.
作為畫素(B)的形成方法,例如可列舉將含有顏色變換發光材料的塗液(以下為顏色變換發光材料塗液)填充到由隔離壁(A-1)隔開的空間中的方法。顏色變換發光材料塗液亦可進一步含有樹脂或溶媒。 An example of a method of forming the pixel (B) is a method of filling a space separated by the partition wall (A-1) with a coating liquid containing a color-converting luminescent material (hereinafter referred to as a color-converting luminescent material coating liquid). The color-changing luminescent material coating liquid may further contain resin or solvent.
作為顏色變換發光材料塗液的填充方法,就容易地將種類不同的顏色變換發光材料分塗於各畫素的觀點而言,較佳為噴墨塗佈法等。 As a filling method of the color-converting luminescent material coating liquid, from the viewpoint of easily distributing different types of color-converting luminescent materials to each pixel, an inkjet coating method or the like is preferred.
亦可對所獲得的塗佈膜進行減壓乾燥及/或加熱乾燥。於進行減壓乾燥的情況下,為了防止乾燥溶媒再凝結於減壓室內壁,減壓乾燥溫度較佳為80℃以下。減壓乾燥的壓力較佳為塗佈膜中所含的溶媒的蒸氣壓以下,更佳為1Pa~1000Pa。減壓乾燥時間較佳為10秒~600秒。於進行加熱乾燥的情況下,作為加熱乾燥裝置,例如可列舉烘箱或加熱板等。加熱乾燥溫度較佳為60℃~200℃。加熱乾燥時間較佳為1分鐘~60分鐘。 The obtained coating film may also be dried under reduced pressure and/or heated. When performing vacuum drying, in order to prevent the drying solvent from condensing again on the wall of the vacuum chamber, the vacuum drying temperature is preferably 80°C or lower. The pressure of reduced pressure drying is preferably below the vapor pressure of the solvent contained in the coating film, more preferably 1 Pa to 1000 Pa. The preferred reduced pressure drying time is 10 seconds to 600 seconds. When heat drying is performed, examples of the heat drying device include an oven, a hot plate, and the like. The preferred heating and drying temperature is 60℃~200℃. The preferred heating and drying time is 1 minute to 60 minutes.
本發明的帶隔離壁的基板較佳為於畫素(B)上進一步具有(C)波長550nm下的折射率為1.20~1.35的低折射率層(以下,有時記載為「低折射率層(C)」)。藉由具有低折射率層(C),可進一步提高光的取出效率,進一步提高顯示裝置的亮度。 The substrate with partitions of the present invention preferably further has (C) a low refractive index layer (hereinafter, sometimes described as "low refractive index layer") with a refractive index of 1.20 to 1.35 at a wavelength of 550 nm on the pixel (B). (C)"). By having the low refractive index layer (C), the light extraction efficiency can be further improved and the brightness of the display device can be further improved.
圖3表示具有低折射率層的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2及畫素3,於該些上進一步具有低折射率層4。
3 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a low refractive index layer. There are patterned
於顯示裝置中,就適度地抑制背光的光反射且效率良好地使光入射至畫素(B)的觀點而言,低折射率層(C)的折射率較佳為1.20以上,更佳為1.23以上。另一方面,就提高亮度的觀點而言,低折射率層(C)的折射率較佳為1.35以下,更佳為1.30以下。此處,關於低折射率層(C)的折射率,可使用稜鏡偶合器, 於大氣壓下、20℃的條件下,自相對於硬化膜面垂直的方向照射波長550nm的光進行測定。 In the display device, from the viewpoint of appropriately suppressing light reflection of the backlight and efficiently allowing light to enter the pixel (B), the refractive index of the low refractive index layer (C) is preferably 1.20 or more, more preferably 1.23 and above. On the other hand, from the viewpoint of improving brightness, the refractive index of the low refractive index layer (C) is preferably 1.35 or less, more preferably 1.30 or less. Here, with respect to the refractive index of the low refractive index layer (C), a coupler can be used, Measurement was performed by irradiating light with a wavelength of 550 nm from the direction perpendicular to the cured film surface under atmospheric pressure and 20° C. conditions.
低折射率層(C)較佳為含有聚矽氧烷及不具有中空結構的二氧化矽粒子。聚矽氧烷與二氧化矽粒子等無機粒子的相容性高,作為可形成透明層的黏合劑發揮功能。另外,藉由含有二氧化矽粒子,可效率良好地於低折射率層(C)中形成微小的空隙並減少折射率,可容易地將折射率調整為所述範圍內。進而,藉由使用不具有中空結構的二氧化矽粒子,不具有容易產生硬化收縮時的裂紋的中空結構,因此可抑制裂紋。再者,於低折射率層(C)中,聚矽氧烷與不具有中空結構的二氧化矽粒子可分別獨立地含有,亦可於聚矽氧烷與不具有中空結構的二氧化矽粒子結合的狀態下含有。就低折射率層(C)的均勻性的觀點而言,較佳為於聚矽氧烷與不具有中空結構的二氧化矽粒子結合的狀態下含有。 The low refractive index layer (C) preferably contains polysiloxane and silicon dioxide particles without a hollow structure. Polysiloxane has high compatibility with inorganic particles such as silica particles and functions as a binder that can form a transparent layer. In addition, by containing silica particles, minute voids can be efficiently formed in the low refractive index layer (C) to reduce the refractive index, and the refractive index can be easily adjusted to fall within the above range. Furthermore, by using silica particles that do not have a hollow structure, they do not have a hollow structure that easily causes cracks during hardening shrinkage, so cracks can be suppressed. Furthermore, in the low refractive index layer (C), polysiloxane and silicon dioxide particles without a hollow structure may be contained independently, or polysiloxane and silicon dioxide particles without a hollow structure may be contained. Contained in a combined state. From the viewpoint of the uniformity of the low refractive index layer (C), it is preferable to contain polysiloxane in a state where it is bonded to silicon dioxide particles that do not have a hollow structure.
低折射率層(C)中所含的聚矽氧烷較佳為含有氟。藉由含有氟,可容易地將低折射率層(C)的折射率調整為1.20~1.35。含氟聚矽氧烷可藉由對至少包含下述通式(10)所表示的含氟烷氧基矽烷化合物的多個烷氧基矽烷化合物進行水解及縮聚而獲得。進而亦可使用其他烷氧基矽烷化合物。 The polysiloxane contained in the low refractive index layer (C) preferably contains fluorine. By containing fluorine, the refractive index of the low refractive index layer (C) can be easily adjusted to 1.20 to 1.35. Fluorine-containing polysiloxane can be obtained by hydrolyzing and condensing a plurality of alkoxysilane compounds including at least a fluorine-containing alkoxysilane compound represented by the following general formula (10). Furthermore, other alkoxysilane compounds can also be used.
[化5]R7 mSi(OR6)4-m (10) [Chemical 5]R 7 m Si(OR 6 ) 4-m (10)
所述通式(10)中,R7表示氟數3~17的氟烷基。R6表示 與通式(5)~(7)中的R6相同的基。m表示1或2。4-m個R6及m個R7分別可相同亦可不同。 In the general formula (10), R 7 represents a fluoroalkyl group with a fluorine number of 3 to 17. R 6 represents the same group as R 6 in general formulas (5) to (7). m represents 1 or 2. 4-m R 6s and m R 7s may be the same or different respectively.
作為通式(10)所表示的含氟烷氧基矽烷化合物,例如可列舉:三氟乙基三甲氧基矽烷、三氟乙基三乙氧基矽烷、三氟乙基三異丙氧基矽烷、三氟丙基三甲氧基矽烷、三氟丙基三乙氧基矽烷、三氟丙基三異丙氧基矽烷、十七氟癸基三甲氧基矽烷、十七氟癸基三乙氧基矽烷、十七氟癸基三異丙氧基矽烷、十三氟辛基三乙氧基矽烷、十三氟辛基三甲氧基矽烷、十三氟辛基三異丙氧基矽烷、三氟乙基甲基二甲氧基矽烷、三氟乙基甲基二乙氧基矽烷、三氟乙基甲基二異丙氧基矽烷、三氟丙基甲基二甲氧基矽烷、三氟丙基甲基二乙氧基矽烷、三氟丙基甲基二異丙氧基矽烷、十七氟癸基甲基二甲氧基矽烷、十七氟癸基甲基二乙氧基矽烷、十七氟癸基甲基二異丙氧基矽烷、十三氟辛基甲基二甲氧基矽烷、十三氟辛基甲基二乙氧基矽烷、十三氟辛基甲基二異丙氧基矽烷、三氟乙基乙基二甲氧基矽烷、三氟乙基乙基二乙氧基矽烷、三氟乙基乙基二異丙氧基矽烷、三氟丙基乙基二甲氧基矽烷、三氟丙基乙基二乙氧基矽烷、三氟丙基乙基二異丙氧基矽烷、十七氟癸基乙基二甲氧基矽烷、十七氟癸基乙基二乙氧基矽烷、十七氟癸基乙基二異丙氧基矽烷、十三氟辛基乙基二乙氧基矽烷、十三氟辛基乙基二甲氧基矽烷、十三氟辛基乙基二異丙氧基矽烷等。亦可使用兩種以上該些化合物。 Examples of the fluorine-containing alkoxysilane compound represented by the general formula (10) include trifluoroethyltrimethoxysilane, trifluoroethyltriethoxysilane, and trifluoroethyltriisopropoxysilane. , trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, trifluoropropyltriisopropoxysilane, heptadecafluorodecyltrimethoxysilane, heptadecafluorodecyltriethoxysilane Silane, heptadecafluorodecyltriisopropoxysilane, tridecafluorooctyltriethoxysilane, tridecafluorooctyltrimethoxysilane, tridecafluorooctyltriisopropoxysilane, trifluoroethyl Methyldimethoxysilane, trifluoroethylmethyldiethoxysilane, trifluoroethylmethyldiisopropoxysilane, trifluoropropylmethyldimethoxysilane, trifluoropropyl Methyldiethoxysilane, trifluoropropylmethyldiisopropoxysilane, heptadecafluorodecylmethyldimethoxysilane, heptadecafluorodecylmethyldiethoxysilane, heptadecafluoride Decylmethyldiisopropoxysilane, tridecafluorooctylmethyldimethoxysilane, tridecafluorooctylmethyldiethoxysilane, tridecafluorooctylmethyldiisopropoxysilane , trifluoroethylethyldimethoxysilane, trifluoroethylethyldiethoxysilane, trifluoroethylethyldiisopropoxysilane, trifluoropropylethyldimethoxysilane, Trifluoropropyl ethyl diethoxysilane, trifluoropropyl ethyl diisopropoxysilane, heptadecafluorodecyl ethyl dimethoxysilane, heptadecafluorodecyl ethyl diethoxysilane , Heptadecafluorodecyl ethyl diisopropoxysilane, tridecafluorooctylethyl diethoxysilane, tridecafluorooctylethyl dimethoxysilane, tridecafluorooctylethyl diisopropoxysilane Propoxysilane, etc. Two or more of these compounds may also be used.
就抑制裂紋的觀點而言,低折射率層(C)中的聚矽氧烷 的含量較佳為4重量%以上。另一方面,就確保二氧化矽粒子間的網絡的觸變性,於低折射率層(C)中適度地保持空氣層且進一步減少折射率的觀點而言,聚矽氧烷的含量較佳為32重量%以下。 From the viewpoint of suppressing cracks, the polysiloxane in the low refractive index layer (C) The content is preferably more than 4% by weight. On the other hand, from the viewpoint of ensuring thixotropy of the network between silica particles, appropriately maintaining an air layer in the low refractive index layer (C), and further reducing the refractive index, the content of polysiloxane is preferably 32% by weight or less.
作為低折射率層(C)中的不具有中空結構的二氧化矽粒子,例如有日產化學工業(股)製造的「斯諾特(SNOWTEX)」(註冊商標)或「有機二氧化矽凝膠」(註冊商標)系列(異丙醇分散液、乙二醇分散液、甲基乙基酮分散液、二甲基乙醯胺分散液、甲基異丁基酮分散液、丙二醇單甲基乙酸酯分散液、丙二醇單甲醚分散液、甲醇分散液、乙酸乙酯分散液、乙酸丁酯分散液、二甲苯-正丁醇分散液、甲苯分散液等。可列舉商品編號PGM-ST、PMA-ST、IPA-ST、IPA-ST-L、IPA-ST-ZL、IPA-ST-UP等。亦可含有兩種以上該些化合物。 Examples of silica particles that do not have a hollow structure in the low refractive index layer (C) include "SNOWTEX" (registered trademark) manufactured by Nissan Chemical Industry Co., Ltd. or "organic silica gel" "(registered trademark) series (isopropyl alcohol dispersion, ethylene glycol dispersion, methyl ethyl ketone dispersion, dimethyl acetamide dispersion, methyl isobutyl ketone dispersion, propylene glycol monomethyl ethyl Acid ester dispersion, propylene glycol monomethyl ether dispersion, methanol dispersion, ethyl acetate dispersion, butyl acetate dispersion, xylene-n-butanol dispersion, toluene dispersion, etc. Product numbers PGM-ST, PMA-ST, IPA-ST, IPA-ST-L, IPA-ST-ZL, IPA-ST-UP, etc. Two or more of these compounds may also be contained.
就確保二氧化矽粒子間的網絡的觸變性,於低折射率層(C)中適度地保持空氣層且進一步減少折射率的觀點而言,低折射率層(C)中的不具有中空結構的二氧化矽粒子的含量較佳為68重量%以上。另一方面,就抑制裂紋的觀點而言,不具有中空結構的二氧化矽粒子的含量較佳為96重量%以下。 From the viewpoint of ensuring thixotropy of the network between silica particles, appropriately maintaining an air layer in the low refractive index layer (C), and further reducing the refractive index, the low refractive index layer (C) does not have a hollow structure. The content of silica particles is preferably 68% by weight or more. On the other hand, from the viewpoint of suppressing cracks, the content of silica particles not having a hollow structure is preferably 96% by weight or less.
就覆蓋畫素(B)的階差並抑制缺陷的產生的觀點而言,低折射率層(C)的厚度較佳為0.1μm以上,更佳為0.5μm以上。另一方面,就減少作為低折射率層(C)的裂紋的原因的應力的觀點而言,低折射率層(C)的厚度較佳為20μm以下,更佳為10μm以下。 From the viewpoint of covering the step difference of the pixel (B) and suppressing the occurrence of defects, the thickness of the low refractive index layer (C) is preferably 0.1 μm or more, more preferably 0.5 μm or more. On the other hand, from the viewpoint of reducing stress that causes cracks in the low refractive index layer (C), the thickness of the low refractive index layer (C) is preferably 20 μm or less, more preferably 10 μm or less.
作為低折射率層(C)的形成方法,就形成方法容易的方面而言,較佳為塗佈法。例如,將含有聚矽氧烷與二氧化矽粒子的低折射率用樹脂組成物塗佈於畫素(B)上,於進行乾燥後,進行加熱,藉此可形成低折射率層(C)。 As a method for forming the low refractive index layer (C), a coating method is preferred in terms of ease of formation. For example, a low refractive index layer (C) can be formed by coating a low refractive index resin composition containing polysiloxane and silica particles on the pixel (B), drying it, and then heating it. .
另外,本發明的帶隔離壁的基板較佳為於所述低折射率層(C)上進一步具有厚度50nm~1,000nm的無機保護層I。藉由具有無機保護層I,大氣中的水分難以到達低折射率層(C),因此可抑制低折射率層(C)的折射率變動,抑制亮度劣化。 In addition, the substrate with isolation walls of the present invention preferably further has an inorganic protective layer I with a thickness of 50 nm to 1,000 nm on the low refractive index layer (C). By having the inorganic protective layer I, it is difficult for moisture in the atmosphere to reach the low refractive index layer (C). Therefore, the refractive index variation of the low refractive index layer (C) can be suppressed and brightness degradation can be suppressed.
圖4表示具有低折射率層及無機保護層I的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2及畫素3,於該些上進一步具有低折射率層4及無機保護層I5。
FIG. 4 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a low refractive index layer and an inorganic protective layer I. There are patterned
另外,本發明的帶隔離壁的基板較佳為於所述畫素(B)與所述低折射率層(C)之間進一步具有厚度50nm~1,000nm的無機保護層II。藉由具有無機保護層II,形成畫素(B)的原料難以自畫素(B)向低折射率層移動,因此可抑制低折射率層(C)的折射率變動,抑制亮度劣化。 In addition, the substrate with isolation walls of the present invention preferably further has an inorganic protective layer II with a thickness of 50 nm to 1,000 nm between the pixel (B) and the low refractive index layer (C). By having the inorganic protective layer II, the material forming the pixel (B) is difficult to move from the pixel (B) to the low refractive index layer, so the refractive index change of the low refractive index layer (C) can be suppressed and brightness degradation can be suppressed.
圖5表示具有低折射率層及無機保護層II的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2及畫素3,於該些上進一步具有無機保護層II6及低折射率層4。
FIG. 5 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a low refractive index layer and an inorganic protective layer II. There are patterned
另外,本發明的帶隔離壁的基板較佳為於基底基板與所述 畫素(B)之間進一步具有厚度1μm~5μm的彩色濾光片(以下,有時記載為「彩色濾光片」)。彩色濾光片具有使特定波長區域的可見光透過並將透過光設為所需的色相的功能。藉由具有彩色濾光片,可提高顯示裝置的色純度。藉由將彩色濾光片的厚度設為1μm以上,可進一步提高色純度。另一方面,藉由將彩色濾光片的厚度設為5μm以下,可進一步提高亮度。 In addition, the substrate with isolation walls of the present invention is preferably a base substrate and the above-mentioned A color filter (hereinafter, sometimes described as a "color filter") with a thickness of 1 μm to 5 μm is further provided between the pixels (B). Color filters have the function of transmitting visible light in a specific wavelength range and setting the transmitted light to a desired hue. By having a color filter, the color purity of the display device can be improved. By setting the thickness of the color filter to 1 μm or more, color purity can be further improved. On the other hand, by setting the thickness of the color filter to 5 μm or less, the brightness can be further improved.
圖6表示具有彩色濾光片的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2及彩色濾光片7,於彩色濾光片7上具有畫素3。
FIG. 6 is a cross-sectional view showing an aspect of the substrate with partition walls of the present invention having a color filter. The
作為彩色濾光片,例如可列舉如下彩色濾光片等:用於液晶顯示器等平板顯示器,使用在光致抗蝕劑中分散有顏料的顏料分散型材料。更具體而言,可列舉:選擇性地透過400nm~550nm的波長的藍色彩色濾光片、選擇性地透過500nm~600nm的波長的綠色彩色濾光片、選擇性地透過500nm以上的波長的黃色彩色濾光片、選擇性地透過600nm以上的波長的紅色彩色濾光片等。另外,彩色濾光片可與含有顏色變換發光材料的畫素(B)隔離地積層,亦可一體化積層。 Examples of the color filter include color filters that are used in flat-panel displays such as liquid crystal displays and use a pigment-dispersed material in which a pigment is dispersed in a photoresist. More specifically, examples include: a blue color filter that selectively transmits a wavelength of 400 nm to 550 nm, a green color filter that selectively transmits a wavelength of 500 nm to 600 nm, and a filter that selectively transmits a wavelength of 500 nm or more. Yellow color filter, red color filter that selectively transmits wavelengths above 600 nm, etc. In addition, the color filter may be laminated separately from the pixel (B) containing the color-changing luminescent material, or may be integrally laminated.
另外,本發明的帶隔離壁的基板較佳為於彩色濾光片與所述畫素(B)之間進一步具有厚度50nm~1,000nm的無機保護層III及/或黃色有機保護層。藉由具有無機保護層III,彩色濾光片的形成原料難以自彩色濾光片到達含有顏色變換發光材料的畫素(B),因此可抑制含有顏色變換發光材料的畫素(B)的亮度劣化。 另外,藉由具有黃色有機保護層,可截止因含有顏色變換發光材料的畫素(B)而未完全變換的藍色洩漏光,提高顏色再現性。 In addition, the substrate with isolation walls of the present invention preferably further has an inorganic protective layer III and/or a yellow organic protective layer with a thickness of 50 nm to 1,000 nm between the color filter and the pixel (B). By having the inorganic protective layer III, it is difficult for the color filter forming material to reach the pixel (B) containing the color-converting luminescent material from the color filter, so the brightness of the pixel (B) containing the color-converting luminescent material can be suppressed. Deterioration. In addition, by having a yellow organic protective layer, blue leakage light that is not completely converted by the pixel (B) containing the color-converting luminescent material can be cut off, thereby improving color reproducibility.
圖7表示具有彩色濾光片及無機保護層III及/或黃色有機保護層的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有經圖案形成的隔離壁2及彩色濾光片7,於該些上具有無機保護層III及/或黃色有機保護層8,具有利用由無機保護層III及/或黃色有機保護層8覆蓋的隔離壁2隔開排列的畫素3。
7 shows a cross-sectional view of one aspect of the substrate with partition walls of the present invention having a color filter, an inorganic protective layer III and/or a yellow organic protective layer. There are patterned
另外,本發明的帶隔離壁的基板較佳為於所述基底基板上進一步具有厚度50nm~1,000nm的無機保護層IV及/或黃色有機保護層。無機保護層IV及/或黃色有機保護層作為折射率調整層發揮作用,可更有效率地取出自畫素(B)出現的光,進一步提高顯示裝置的亮度。另外,黃色有機保護層截止因含有顏色變換發光材料的畫素(B)而未完全變換的藍色洩漏光,可提高顏色再現性。無機保護層IV及/或黃色有機保護層更佳為設置於基底基板與隔離壁(A)及畫素(B)之間。 In addition, the substrate with isolation walls of the present invention preferably further has an inorganic protective layer IV and/or a yellow organic protective layer with a thickness of 50 nm to 1,000 nm on the base substrate. The inorganic protective layer IV and/or the yellow organic protective layer functions as a refractive index adjustment layer, which can more efficiently extract the light emerging from the pixel (B), further improving the brightness of the display device. In addition, the yellow organic protective layer blocks blue leakage light that is not completely converted due to the pixel (B) containing the color-converting luminescent material, thereby improving color reproducibility. The inorganic protective layer IV and/or the yellow organic protective layer is preferably disposed between the base substrate, the isolation wall (A) and the pixel (B).
圖8表示具有無機保護層IV及/或黃色有機保護層的本發明的帶隔離壁的基板的一態樣的剖面圖。於基底基板1上具有無機保護層IV及/或黃色有機保護層9,於該些上具有經圖案形成的隔離壁2及彩色濾光片7,於該些上具有經圖案形成的隔離壁2及畫素3。
8 shows a cross-sectional view of one aspect of the substrate with partition walls of the present invention having an inorganic protective layer IV and/or a yellow organic protective layer. There is an inorganic protective layer IV and/or a yellow organic
作為構成無機保護層I~無機保護層IV的材料,例如可列舉:氧化矽、氧化銦錫、氧化鎵鋅等金屬氧化物;氮化矽等金屬氮 化物;氟化鎂等氟化物等。亦可含有兩種以上該些化合物。該些中,就水蒸氣透過性低、透過性高的方面而言,更佳為氮化矽或氧化矽。 Examples of materials constituting the inorganic protective layers I to IV include metal oxides such as silicon oxide, indium tin oxide, and gallium zinc oxide; and metal nitrogen such as silicon nitride. Chemicals; fluorides such as magnesium fluoride, etc. Two or more of these compounds may be contained. Among these, silicon nitride or silicon oxide is more preferred in terms of low water vapor permeability and high permeability.
就充分抑制水蒸氣等物質透過的觀點而言,無機保護層I~無機保護層IV的厚度較佳為50nm以上,更佳為100nm以上。另一方面,就抑制透過率的下降的觀點而言,無機保護層I~無機保護層IV的厚度較佳為800nm以下,更佳為500nm以下。 From the viewpoint of fully suppressing the penetration of substances such as water vapor, the thickness of the inorganic protective layer I to the inorganic protective layer IV is preferably 50 nm or more, more preferably 100 nm or more. On the other hand, from the viewpoint of suppressing a decrease in transmittance, the thickness of the inorganic protective layers I to IV is preferably 800 nm or less, more preferably 500 nm or less.
無機保護層I~無機保護層IV的厚度可藉由如下方式測定:使用截面拋光儀等研磨裝置,使與基底基板垂直的截面露出,使用掃描式電子顯微鏡或穿透式電子顯微鏡對截面進行放大觀察。 The thickness of the inorganic protective layer I to the inorganic protective layer IV can be measured by using a grinding device such as a cross-section polisher to expose the cross-section perpendicular to the base substrate, and using a scanning electron microscope or a transmission electron microscope to enlarge the cross-section. observe.
作為無機保護層I~無機保護層IV的形成方法,例如可列舉濺渡法等。無機保護層較佳為無色透明或黃色透明。 Examples of methods for forming the inorganic protective layers I to IV include a sputtering method and the like. The inorganic protective layer is preferably colorless and transparent or yellow and transparent.
黃色有機保護層例如可對本發明的樹脂組成物進行圖案加工而獲得,所述樹脂組成物包含含有銀的有機金屬化合物作為有機金屬化合物。如上所述,含有銀的有機金屬化合物於圖案形成時,藉由在加熱步驟中分解.凝聚而成為黃色粒子,具有使保護層黃色化的功能。作為含有銀的有機金屬化合物,例如可列舉新癸酸銀、辛酸銀、水楊酸銀等。該些中,就進一步黃色化的觀點而言,較佳為新癸酸銀。於黃色有機保護層用樹脂組成物中,含有銀的有機金屬化合物的含量較佳為固體成分中的0.2重量%~5重量%。藉由使含有銀的有機金屬化合物的含量為0.2重量%以上,可進一步黃色化。含有銀的有機金屬化合物的含量更佳為固體成分中的 1.5重量%以上。另一方面,藉由使含有銀的有機金屬化合物的含量為固體成分中的5重量%以下,可進一步提高透過率。 The yellow organic protective layer can be obtained, for example, by subjecting the resin composition of the present invention containing an organometallic compound containing silver as an organometallic compound to pattern processing. As mentioned above, the organometallic compound containing silver is decomposed in the heating step during pattern formation. Aggregates to form yellow particles and has the function of yellowing the protective layer. Examples of the organometallic compound containing silver include silver neodecanoate, silver octoate, silver salicylate, and the like. Among these, from the viewpoint of further yellowing, silver neodecanoate is preferred. In the resin composition for the yellow organic protective layer, the content of the organic metal compound containing silver is preferably 0.2% by weight to 5% by weight of the solid content. By setting the content of the silver-containing organometallic compound to 0.2% by weight or more, further yellowing can be achieved. The content of the silver-containing organometallic compound in the solid component is more preferably 1.5% by weight or more. On the other hand, by setting the content of the organometallic compound containing silver to 5% by weight or less of the solid content, the transmittance can be further improved.
形成黃色有機保護層的樹脂組成物可含有黃色顏料。作為黃色顏料,例如可列舉:顏料黃(pigment yellow)(以下簡稱為PY)PY12、PY13、PY17、PY20、PY24、PY83、PY86、PY93、PY95、PY109、PY110、PY117、PY125、PY129、PY137、PY138、PY139、PY147、PY148、PY150、PY153、PY154、PY166、PY168、PY185等。其中,就選擇性地遮擋藍色光的觀點而言,較佳選自PY139、PY147、PY148及PY150中的黃色顏料。 The resin composition forming the yellow organic protective layer may contain a yellow pigment. Examples of the yellow pigment include: Pigment yellow (hereinafter referred to as PY) PY12, PY13, PY17, PY20, PY24, PY83, PY86, PY93, PY95, PY109, PY110, PY117, PY125, PY129, PY137, PY138, PY139, PY147, PY148, PY150, PY153, PY154, PY166, PY168, PY185, etc. Among them, from the viewpoint of selectively blocking blue light, a yellow pigment selected from PY139, PY147, PY148 and PY150 is preferred.
作為圖案形成黃色有機保護層的方法,較佳為與所述隔離壁(A-1)同樣地藉由感光性糊劑法進行圖案形成的方法。 As a method of patterning the yellow organic protective layer, a method of patterning by a photosensitive paste method in the same manner as the partition wall (A-1) is preferred.
如圖7所示,於在彩色濾光片7上形成黃色有機保護層8的情況下,黃色有機保護層8亦可具有作為使彩色濾光片的各畫素平坦化的外塗層的作用。
As shown in FIG. 7 , when the yellow organic
就充分遮擋藍色洩漏光的觀點而言,黃色有機保護層的厚度較佳為100nm以上,更佳為500nm以上。另一方面,就抑制光取出效率的降低的觀點而言,黃色有機保護層的厚度較佳為3000nm以下,更佳為2000nm以下。 From the viewpoint of fully blocking blue leakage light, the thickness of the yellow organic protective layer is preferably 100 nm or more, and more preferably 500 nm or more. On the other hand, from the viewpoint of suppressing a decrease in light extraction efficiency, the thickness of the yellow organic protective layer is preferably 3000 nm or less, more preferably 2000 nm or less.
其次,對本發明的顯示裝置進行說明。本發明的顯示裝置具有所述帶隔離壁的基板、以及發光光源。作為發光光源,較佳為選自液晶單元、有機EL單元、微型LED單元及微LED單元中的發光光源。就發光特性優異的方面而言,作為發光光源,更佳為有 機EL單元。此處,所謂微型LED單元,是指排列有多個縱橫長度為100μm~10mm左右的LED的單元。所謂微LED單元,是指排列有多個縱橫長度未滿100μm的LED的單元。 Next, the display device of the present invention will be described. The display device of the present invention includes the substrate with the partition wall and a light emitting source. As the luminescent light source, a luminescent light source selected from a liquid crystal unit, an organic EL unit, a micro LED unit, and a micro LED unit is preferred. In terms of excellent luminescence characteristics, as a luminescent light source, it is more preferable to machine EL unit. Here, the so-called micro LED unit refers to a unit in which a plurality of LEDs with a vertical and horizontal length of about 100 μm to 10 mm are arranged. The so-called micro LED unit refers to a unit in which multiple LEDs with a vertical and horizontal length of less than 100 μm are arranged.
關於本發明的顯示裝置的製造方法,列舉具有本發明的帶隔離壁的基板與有機EL單元的顯示裝置的一例進行說明。於玻璃基板上塗佈感光性聚醯亞胺樹脂,使用光微影法形成具有開口部的絕緣膜。於其上濺渡鋁後,藉由光微影法進行鋁的圖案化,於無絕緣膜的開口部形成包含鋁的背面電極層。接著,於其上,作為電子輸送層,藉由真空蒸鍍法使三(8-羥基喹啉)鋁(以下,簡稱為Alq3)成膜,其後作為發光層,形成於Alq3中摻雜有二胺基亞甲基吡喃、喹吖啶酮及4,4'-雙(2,2-二苯基乙烯基)聯苯的白色發光層。其次,作為電洞輸送層,利用真空蒸鍍法使N,N'-二苯基-N,N'-雙(α-萘基)-1,1'-聯苯-4,4'-二胺成膜。最後,作為透明電極,利用濺渡使ITO成膜,製作具有白色發光層的有機EL單元。藉由使以所述方式獲得的有機EL單元與所述帶隔離壁的基板對向並利用密封劑貼合,可製作顯示裝置。 The manufacturing method of the display device of the present invention will be described with reference to an example of a display device including the substrate with partition walls of the present invention and an organic EL unit. Photosensitive polyimide resin is coated on the glass substrate, and an insulating film with openings is formed using photolithography. After aluminum is sputtered thereon, the aluminum is patterned by photolithography, and a back electrode layer containing aluminum is formed in the opening without the insulating film. Next, as an electron transport layer, a film of tris(8-hydroxyquinoline)aluminum (hereinafter referred to as Alq 3 ) was formed by a vacuum evaporation method, and then as a light-emitting layer, a film doped in Alq 3 was formed. A white luminescent layer mixed with diaminomethylenepyran, quinacridone and 4,4'-bis(2,2-diphenylvinyl)biphenyl. Secondly, as the hole transport layer, N,N'-diphenyl-N,N'-bis(α-naphthyl)-1,1'-biphenyl-4,4'-di Amine films. Finally, as a transparent electrode, ITO was formed into a film by sputtering, and an organic EL unit with a white light-emitting layer was produced. A display device can be produced by arranging the organic EL unit obtained in the above manner to face the substrate with the partition wall and bonding them together with a sealant.
[實施例] [Example]
以下,列舉實施例及比較例對本發明進行更具體的說明,但本發明不限定於該些的範圍。再者,關於所用的化合物中使用簡稱的化合物,將名稱示於以下。 Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples, but the present invention is not limited to these scopes. In addition, among the compounds used, the names of the compounds whose abbreviations are used are shown below.
PGMEA:丙二醇單甲醚乙酸酯 PGMEA: propylene glycol monomethyl ether acetate
DAA:二丙酮醇 DAA: diacetone alcohol
BHT:二丁基羥基甲苯。 BHT: Dibutylhydroxytoluene.
合成例1~合成例4中的聚矽氧烷溶液的固體成分濃度是藉由以下方法求出。秤取1.5g聚矽氧烷溶液至鋁杯中,使用加熱板於250℃下加熱30分鐘而使液體成分蒸發。對加熱後殘留於鋁杯中的固體成分的重量進行秤量,根據相對於加熱前的重量的比例求出聚矽氧烷溶液的固體成分濃度。 The solid content concentration of the polysiloxane solution in Synthesis Examples 1 to 4 was determined by the following method. Weigh 1.5g of the polysiloxane solution into an aluminum cup, and heat it at 250°C for 30 minutes using a heating plate to evaporate the liquid component. The weight of the solid content remaining in the aluminum cup after heating was weighed, and the solid content concentration of the polysiloxane solution was determined based on the ratio to the weight before heating.
合成例1~合成例4中的聚矽氧烷的重量平均分子量是藉由以下方法求出。使用GPC分析裝置(HLC-8220;東曹(股)製造),使用四氫呋喃作為移動相,基於「JIS K7252-3(製定年月日=2008/03/20)」進行GPC分析,測定聚苯乙烯換算的重量平均分子量。 The weight average molecular weight of the polysiloxane in Synthesis Examples 1 to 4 was determined by the following method. Using a GPC analysis device (HLC-8220; manufactured by Tosoh Co., Ltd.) and using tetrahydrofuran as the mobile phase, GPC analysis was performed based on "JIS K7252-3 (date of establishment = 2008/03/20)" to measure polystyrene. Converted weight average molecular weight.
合成例1~合成例4中的聚矽氧烷中的各重覆單元的含有比率是藉由以下方法求出。將聚矽氧烷溶液注入至直徑10mm的「鐵氟龍(Teflon)」(註冊商標)製造的核磁共振(nuclear magnetic resonance,NMR)樣品管中,進行29Si-NMR測定,根據源自特定的有機矽烷的Si的積分值相對於源自有機矽烷的Si整體的積分值的比例計算出各重覆單元的含有比率。以下示出29Si-NMR測定條件。 The content ratio of each repeating unit in the polysiloxane in Synthesis Examples 1 to 4 was determined by the following method. The polysiloxane solution was poured into a nuclear magnetic resonance (NMR) sample tube made of "Teflon" (registered trademark) with a diameter of 10 mm, and 29 Si-NMR measurement was performed. The content ratio of each repeating unit was calculated from the ratio of the integrated value of Si in the organosilane to the integrated value of the entire Si derived from the organosilane. 29 Si-NMR measurement conditions are shown below.
裝置:核磁共振裝置(JNM-GX270;日本電子(股)製造) Device: Nuclear magnetic resonance device (JNM-GX270; manufactured by JEOL Ltd.)
測定法:閘控去偶(gated decoupling)法 Determination method: gated decoupling method
測定核頻率:53.6693MHz(29Si核) Determined core frequency: 53.6693MHz ( 29 Si core)
光譜寬度:20000Hz Spectral width: 20000Hz
脈波寬度:12μs(45°脈波) Pulse width: 12μs (45° pulse)
脈波重覆時間:30.0秒 Pulse wave repetition time: 30.0 seconds
溶媒:丙酮-d6 Solvent: acetone-d6
標準物質:四甲基矽烷 Standard material: tetramethylsilane
測定溫度:23℃ Measuring temperature: 23℃
試樣轉速:0.0Hz。 Sample rotation speed: 0.0Hz.
合成例1聚矽氧烷(PSL-1)溶液 Synthesis Example 1 Polysiloxane (PSL-1) Solution
於1000ml的三口燒瓶中裝入三氟丙基三甲氧基矽烷147.32g(0.675mol)、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷40.66g(0.175mol)、3-三甲氧基矽烷基丙基丁二酸酐26.23g(0.10mol)、3-(3,4-環氧基環己基)丙基三甲氧基矽烷12.32g(0.05mol)、BHT 0.808g及PGMEA 171.62g,一面於室溫下攪拌一面用30分鐘添加在水52.65g中溶解有磷酸2.265g(相對於裝入單體而為1.0重量%)的磷酸水溶液。其後,將燒瓶浸漬於70℃的油浴中攪拌90分鐘後,花30分鐘將油浴升溫至115℃為止。於升溫開始1小時後,溶液溫度(內溫)達到100℃,然後進行2小時加熱攪拌(內溫為100℃~110℃),獲得聚矽氧烷溶液。再者,於升溫及加熱攪拌中,以0.05升/分鐘來流通氮氣95體積%、氧氣5體積%的混合氣體。反應中餾出作為副產物的甲醇及水合計131.35g。於所獲得的聚矽氧烷溶液中以固體成分濃度成為40重量%的方式追加PGMEA,而獲得聚矽氧烷(PSL-1)溶液。再者,所獲得的聚矽氧烷(PSL-1)的重量平均分子量為4,000。另外,聚矽氧烷(PSL-1) 中的、源自三氟丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-三甲氧基矽烷基丙基丁二酸酐及3-(3,4-環氧基環己基)丙基三甲氧基矽烷的各重覆單元的莫耳比分別為67.5mol%、17.5mol%、10mol%及5mol%。 Put 147.32g (0.675mol) of trifluoropropyltrimethoxysilane, 40.66g (0.175mol) of 3-methacryloxypropylmethyldimethoxysilane, and 3-trimethoxysilane into a 1000ml three-necked flask. Oxysilylpropylsuccinic anhydride 26.23g (0.10mol), 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane 12.32g (0.05mol), BHT 0.808g and PGMEA 171.62g, A phosphoric acid aqueous solution in which 2.265 g of phosphoric acid (1.0% by weight relative to the charged monomer) was dissolved in 52.65 g of water was added over 30 minutes while stirring at room temperature. Thereafter, the flask was immersed in an oil bath at 70°C and stirred for 90 minutes, and then the oil bath was heated up to 115°C over 30 minutes. One hour after the temperature rise started, the solution temperature (internal temperature) reached 100°C, and then heating and stirring were performed for 2 hours (internal temperature was 100°C ~ 110°C) to obtain a polysiloxane solution. Furthermore, during temperature rise and heating stirring, a mixed gas of 95 volume % nitrogen and 5 volume % oxygen was circulated at 0.05 liter/minute. During the reaction, a total of 131.35 g of methanol and water were distilled off as by-products. PGMEA was added to the obtained polysiloxane solution so that the solid content concentration became 40% by weight, and a polysiloxane (PSL-1) solution was obtained. Furthermore, the weight average molecular weight of the obtained polysiloxane (PSL-1) was 4,000. In addition, polysiloxane (PSL-1) in, derived from trifluoropropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-trimethoxysilylpropylsuccinic anhydride and 3-(3, The molar ratios of each repeating unit of 4-epoxycyclohexyl)propyltrimethoxysilane are 67.5 mol%, 17.5 mol%, 10 mol% and 5 mol% respectively.
合成例2聚矽氧烷(PSL-2)溶液 Synthesis Example 2 Polysiloxane (PSL-2) Solution
於1000ml的三口燒瓶中裝入二苯基二甲氧基矽烷116.07g(0.475mol)、二甲基二甲氧基矽烷(0.20mol)、3-甲基丙烯醯氧基丙基三甲氧基矽烷43.46g(0.175mol)、3-三甲氧基矽烷基丙基丁二酸酐26.23g(0.10mol)、3-(3,4-環氧基環己基)丙基三甲氧基矽烷12.32g(0.05mol)、BHT 0.843g及PGMEA 176.26g,一面於室溫下攪拌一面用30分鐘添加在水43.65g中溶解有磷酸2.221g(相對於裝入單體而為1.0重量%)的磷酸水溶液。其後,與合成例1同樣地獲得聚矽氧烷溶液。反應中餾出作為副產物的甲醇及水合計136.90g。於所獲得的聚矽氧烷溶液中以固體成分濃度成為40重量%的方式追加PGMEA,而獲得聚矽氧烷(PSL-2)溶液。再者,所獲得的聚矽氧烷(PSL-2)的重量平均分子量為2,800。另外,聚矽氧烷(PSL-2)中的、源自二苯基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-三甲氧基矽烷基丙基丁二酸酐及3-(3,4-環氧基環己基)丙基三甲氧基矽烷的各重覆單元的莫耳比分別為47.5mol%、20mol%、17.5mol%、10mol%及5mol%。 Put 116.07g of diphenyldimethoxysilane (0.475mol), dimethyldimethoxysilane (0.20mol), and 3-methacryloxypropyltrimethoxysilane into a 1000ml three-necked flask. 43.46g (0.175mol), 3-trimethoxysilylpropylsuccinic anhydride 26.23g (0.10mol), 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane 12.32g (0.05mol) ), 0.843g of BHT and 176.26g of PGMEA, and a phosphoric acid aqueous solution in which 2.221g of phosphoric acid (1.0% by weight relative to the charged monomer) was dissolved in 43.65g of water was added over 30 minutes while stirring at room temperature. Thereafter, a polysiloxane solution was obtained in the same manner as in Synthesis Example 1. During the reaction, a total of 136.90 g of methanol and water were distilled off as by-products. PGMEA was added to the obtained polysiloxane solution so that the solid content concentration became 40% by weight, and a polysiloxane (PSL-2) solution was obtained. Furthermore, the weight average molecular weight of the obtained polysiloxane (PSL-2) was 2,800. In addition, polysiloxane (PSL-2) is derived from diphenyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and 3-trimethoxysilylpropylbutanol. The molar ratios of each repeating unit of dianhydride and 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane are 47.5 mol%, 20 mol%, 17.5 mol%, 10 mol% and 5 mol% respectively.
合成例3聚矽氧烷(PSL-3)溶液 Synthesis Example 3 Polysiloxane (PSL-3) Solution
於1000ml的三口燒瓶中裝入三氟丙基三甲氧基矽烷147.32 g(0.675mol)、3-甲基丙烯醯氧基丙基三甲氧基矽烷43.46g(0.175mol)、3-三甲氧基矽烷基丙基丁二酸酐26.23g(0.10mol)、3-(3,4-環氧基環己基)丙基三甲氧基矽烷12.32g(0.05mol)、BHT 0.810g及PGMEA 172.59g,一面於室溫下攪拌一面用30分鐘添加在水54.45g中溶解有磷酸2.293g(相對於裝入單體而為1.0重量%)的磷酸水溶液。其後,與合成例1同樣地獲得聚矽氧烷溶液。反應中餾出作為副產物的甲醇及水合計140.05g。於所獲得的聚矽氧烷溶液中以固體成分濃度成為40重量%的方式追加PGMEA,而獲得聚矽氧烷(PSL-3)溶液。再者,所獲得的聚矽氧烷(PSL-3)的重量平均分子量為4,100。另外,聚矽氧烷(PSL-3)中的、源自三氟丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-三甲氧基矽烷基丙基丁二酸酐及3-(3,4-環氧基環己基)丙基三甲氧基矽烷的各重覆單元的莫耳比分別為67.5mol%、17.5mol%、10mol%及5mol%。 Put trifluoropropyltrimethoxysilane 147.32 into a 1000ml three-necked flask. g (0.675mol), 3-methacryloxypropyltrimethoxysilane 43.46g (0.175mol), 3-trimethoxysilylpropylsuccinic anhydride 26.23g (0.10mol), 3-(3 , 12.32g (0.05mol) of 4-epoxycyclohexyl)propyltrimethoxysilane, 0.810g of BHT and 172.59g of PGMEA were added over 30 minutes while stirring at room temperature. 2.293% of phosphoric acid was dissolved in 54.45g of water. g (1.0% by weight relative to the charged monomer) of phosphoric acid aqueous solution. Thereafter, a polysiloxane solution was obtained in the same manner as in Synthesis Example 1. During the reaction, a total of 140.05 g of methanol and water were distilled off as by-products. PGMEA was added to the obtained polysiloxane solution so that the solid content concentration became 40% by weight, and a polysiloxane (PSL-3) solution was obtained. Furthermore, the weight average molecular weight of the obtained polysiloxane (PSL-3) was 4,100. In addition, polysiloxane (PSL-3) is derived from trifluoropropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and 3-trimethoxysilylpropylbutanol. The molar ratios of each repeating unit of dianhydride and 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane are 67.5 mol%, 17.5 mol%, 10 mol% and 5 mol% respectively.
合成例4聚矽氧烷(PSL-4)溶液 Synthesis Example 4 Polysiloxane (PSL-4) Solution
於1000ml的三口燒瓶中裝入甲基三甲氧基矽烷34.05g(0.250mol)、苯基三甲氧基矽烷99.15g(0.500mol)、四乙氧基矽烷31.25g(0.150mol)、3-(3,4-環氧基環己基)丙基三甲氧基矽烷24.64g(0.100mol)及PGMEA 174.95g,一面於室溫下攪拌一面用30分鐘添加在水56.70g中溶解有磷酸0.945g(相對於裝入單體而為0.50重量%)的磷酸水溶液。其後,與合成例1同樣地獲得聚矽氧烷溶液。反應中餾出作為副產物的甲醇及水合計 129.15g。於所獲得的聚矽氧烷溶液中以固體成分濃度成為40重量%的方式追加PGMEA,而獲得聚矽氧烷(PSL-4)溶液。再者,所獲得的聚矽氧烷(PSL-4)的重量平均分子量為4,200。另外,聚矽氧烷(PSL-4)中的、源自甲基三甲氧基矽烷、苯基三甲氧基矽烷、四乙氧基矽烷及3-(3,4-環氧基環己基)丙基三甲氧基矽烷的各重覆單元的莫耳比分別為25mol%、50mol%、15mol%及10mol%。 Put 34.05g (0.250mol) of methyltrimethoxysilane, 99.15g (0.500mol) of phenyltrimethoxysilane, 31.25g (0.150mol) of tetraethoxysilane, and 3-(3 , 24.64g (0.100mol) of 4-epoxycyclohexyl)propyltrimethoxysilane and 174.95g of PGMEA were added over 30 minutes while stirring at room temperature. 0.945g of phosphoric acid was dissolved in 56.70g of water (relative to A phosphoric acid aqueous solution containing 0.50% by weight of monomer was added. Thereafter, a polysiloxane solution was obtained in the same manner as in Synthesis Example 1. The total amount of methanol and water distilled out as by-products during the reaction 129.15g. PGMEA was added to the obtained polysiloxane solution so that the solid content concentration became 40% by weight, and a polysiloxane (PSL-4) solution was obtained. Furthermore, the weight average molecular weight of the obtained polysiloxane (PSL-4) was 4,200. In addition, polysiloxane (PSL-4) is derived from methyltrimethoxysilane, phenyltrimethoxysilane, tetraethoxysilane and 3-(3,4-epoxycyclohexyl)propane. The molar ratios of each repeating unit of trimethoxysilane are 25 mol%, 50 mol%, 15 mol% and 10 mol% respectively.
將合成例1~合成例4的組成匯總示於表1中。 The compositions of Synthesis Examples 1 to 4 are summarized in Table 1.
合成例5綠色有機螢光體 Synthesis Example 5 Green Organic Phosphor
將3,5-二溴苯甲醛(3.0g)、4-第三丁基苯基硼酸(5.3g)、四(三苯基膦)鈀(0)(0.4g)及碳酸鉀(2.0g)放入燒瓶中,進行氮氣置換。於其中添加進行了脫氣的甲苯(30mL)及進行了脫氣的水(10mL),進行4小時回流。將反應溶液冷卻至室溫,於進行分液後,利用飽和食鹽水對有機層進行清洗。利用硫酸鎂對該有機層加以乾燥並進行過濾,然後將溶媒蒸餾去除。藉由矽膠管柱層析法對所獲得的反應產物進行精製,從而獲得3,5-雙(4-第三丁基苯基)苯甲醛(3.5g)的白色固體。其次,將3,5-雙(4-第三丁基苯基)苯甲醛(1.5g)與2,4-二甲基吡咯(0.7g)放入燒瓶中,加入脫水二氯甲烷(200mL)及三氟乙酸(1滴),於氮氣環境下攪拌4小時。於所述反應混合物中添加2,3-二氯-5,6-二氰基-1,4-苯醌(0.85g)的脫水二氯甲烷溶液,進而攪拌1小時。反應結束後,添加三氟化硼二乙醚錯合物(7.0mL)及二異丙基乙基胺(7.0mL),攪拌4小時後,進而添加水(100mL)加以攪拌,並對有機層進行分液。利用硫酸鎂對該有機層加以乾燥並進行過濾,然後將溶媒蒸餾去除。藉由矽膠管柱層析法對所獲得的反應產物進行精製,從而獲得綠色粉末0.4g(產率17%)。所獲得的綠色粉末的1H-NMR分析結果如以下所述,從而確認所述獲得的綠色粉末為下述結構式所表示的[G-1]。
1H-NMR(CDCl3(d=ppm)):7.95(s,1H)、7.63-7.48(m,10H)、6.00(s,2H)、2.58(s,6H)、1.50(s,6H)、1.37(s,18H)。 1 H-NMR (CDCl 3 (d=ppm)): 7.95 (s, 1H), 7.63-7.48 (m, 10H), 6.00 (s, 2H), 2.58 (s, 6H), 1.50 (s, 6H) ,1.37(s,18H).
合成例6紅色有機螢光體 Synthesis Example 6 Red Organic Phosphor
於氮氣流下,將4-(4-第三丁基苯基)-2-(4-甲氧基苯基)吡咯300mg、2-甲氧基苯甲醯氯201mg及甲苯10ml的混合溶液於120℃下加熱6小時。冷卻至室溫後,對溶媒進行蒸發(evaporate)。利用乙醇20ml對所得的殘留物進行清洗,並加以真空乾燥,藉此獲得2-(2-甲氧基苯甲醯基)-3-(4-第三丁基苯基)-5-(4-甲氧基苯基)吡咯260mg。其次,於氮氣流下,將2-(2-甲氧基苯甲醯基)-3-(4-第三丁基苯基)-5-(4-甲氧基苯基)吡咯260mg、4-(4-第三丁基苯基)-2-(4-甲氧基苯基)吡咯180mg、甲磺酸酐206mg及經脫氣的甲苯10ml的混合溶液於125℃下加熱7小時。於將所述反應混合物冷卻至室溫後,注入水20ml,並利用二氯甲烷30ml進行萃取。於利用水20ml將有機層清洗兩次後,進行蒸發,並進行真空乾燥,藉此獲得作為殘留物的吡咯亞甲基體。其次,於氮氣流下,對所獲得的吡咯亞甲基體與甲苯10ml的混合溶液添加二異丙基乙基胺305mg及三氟化硼二乙醚錯合物670mg,於室溫下攪拌3小時。於所述反應混合物中注入水20ml並利用二氯甲烷30ml進行萃取。利用水20ml將有機層清洗兩次,並利用硫酸鎂加以乾燥, 然後進行蒸發。藉由矽膠管柱層析法進行精製,並加以真空乾燥後,獲得紫紅色粉末0.27g(產率70%)。所獲得的紫紅色粉末的1H-NMR分析結果如下,從而確認到以上所獲得的紫紅色粉末為下述結構式所表示的[R-1]。 Under nitrogen flow, add a mixed solution of 300 mg of 4-(4-tert-butylphenyl)-2-(4-methoxyphenyl)pyrrole, 201 mg of 2-methoxybenzoyl chloride and 10 ml of toluene at 120 ℃ for 6 hours. After cooling to room temperature, the solvent is evaporated. The obtained residue was washed with 20 ml of ethanol and dried under vacuum to obtain 2-(2-methoxybenzoyl)-3-(4-tert-butylphenyl)-5-(4 -Methoxyphenyl)pyrrole 260 mg. Next, under nitrogen flow, 260 mg of 2-(2-methoxybenzyl)-3-(4-tert-butylphenyl)-5-(4-methoxyphenyl)pyrrole, 4- A mixed solution of 180 mg of (4-tert-butylphenyl)-2-(4-methoxyphenyl)pyrrole, 206 mg of methanesulfonic anhydride and 10 ml of degassed toluene was heated at 125°C for 7 hours. After the reaction mixture was cooled to room temperature, 20 ml of water was injected, and extraction was performed with 30 ml of methylene chloride. The organic layer was washed twice with 20 ml of water, evaporated, and dried under vacuum to obtain the pyrrromethylene form as a residue. Next, under nitrogen flow, 305 mg of diisopropylethylamine and 670 mg of boron trifluoride diethyl ether complex were added to the obtained mixed solution of 10 ml of pyrromethene and toluene, and the mixture was stirred at room temperature for 3 hours. 20 ml of water was added to the reaction mixture, and the mixture was extracted with 30 ml of methylene chloride. The organic layer was washed twice with 20 ml of water, dried over magnesium sulfate, and then evaporated. After purification by silica column chromatography and vacuum drying, 0.27g of purple-red powder was obtained (yield 70%). The results of 1 H-NMR analysis of the obtained purple-red powder are as follows, confirming that the above-obtained purple-red powder is [R-1] represented by the following structural formula.
1H-NMR(CDCl3(d=ppm)):1.19(s,18H),3.42(s,3H),3.85(s,6H),5.72(d,1H),6.20(t,1H),6.42-6.97(m,16H),7.89(d,4H)。 1 H-NMR (CDCl 3 (d=ppm)): 1.19 (s, 18H), 3.42 (s, 3H), 3.85 (s, 6H), 5.72 (d, 1H), 6.20 (t, 1H), 6.42 -6.97(m,16H),7.89(d,4H).
合成例7含二氧化矽粒子的聚矽氧烷溶液(LS-1) Synthesis Example 7 Polysiloxane solution containing silica particles (LS-1)
於500ml的三口燒瓶中加入甲基三甲氧基矽烷0.05g(0.4mmol)、三氟丙基三甲氧基矽烷0.66g(3.0mmol)、三甲氧基矽烷基丙基丁二酸酐0.10g(0.4mmol)、γ-丙烯醯氧基丙基三甲氧基矽烷7.97g(34mmol)及15.6重量%的二氧化矽粒子的異丙醇分散液(IPA-ST-UP:日產化學工業(股)製造)224.37g,加入乙二醇單-第三丁醚163.93g。一面於室溫下攪拌,一面用3分鐘添加在水4.09g中溶解有磷酸0.088g的磷酸水溶液。其後,將燒瓶浸漬於40℃的油浴中攪拌60分鐘後,用30分鐘將油浴升溫至115℃為止。升溫開始1小時後溶液的內溫達到100℃,然後進而加熱攪拌2小時(內溫為100℃~110℃),藉此獲得含二氧化矽粒子的 聚矽氧烷溶液(LS-1)。再者,於升溫及加熱攪拌中,以0.05 l(升)/分鐘來流通氮氣。反應中餾出作為副產物的甲醇及水合計194.01g。所獲得的含二氧化矽粒子的聚矽氧烷溶液(LS-1)的固體成分濃度為24.3重量%,固體成分中的聚矽氧烷與二氧化矽粒子的含量分別為15重量%及85重量%。所獲得的含二氧化矽粒子的聚矽氧烷溶液(LS-1)中的聚矽氧烷的、源自甲基三甲氧基矽烷、三氟丙基三甲氧基矽烷、3-三甲氧基矽烷基丙基丁二酸酐及γ-丙烯醯氧基丙基三甲氧基矽烷的各重覆單元的莫耳比分別為1.0mol%、8.0mol%、1.0mol%及90.0mol%。 In a 500ml three-necked flask, add 0.05g (0.4mmol) of methyltrimethoxysilane, 0.66g (3.0mmol) of trifluoropropyltrimethoxysilane, and 0.10g (0.4mmol) of trimethoxysilylpropylsuccinic anhydride. ), 7.97 g (34 mmol) of γ-acryloxypropyltrimethoxysilane and 15.6% by weight of silica particles in isopropyl alcohol dispersion (IPA-ST-UP: manufactured by Nissan Chemical Industry Co., Ltd.) 224.37 g, add 163.93g of ethylene glycol mono-tert-butyl ether. While stirring at room temperature, a phosphoric acid aqueous solution containing 0.088 g of phosphoric acid dissolved in 4.09 g of water was added over 3 minutes. Thereafter, the flask was immersed in a 40°C oil bath and stirred for 60 minutes, and then the oil bath was heated to 115°C over 30 minutes. One hour after the temperature rise starts, the internal temperature of the solution reaches 100°C, and then the solution is further heated and stirred for 2 hours (the internal temperature is 100°C ~ 110°C), thereby obtaining a solution containing silica particles. Polysiloxane solution (LS-1). Furthermore, during the temperature rise and heating stirring, nitrogen gas was circulated at 0.05 l (liter)/minute. During the reaction, a total of 194.01 g of methanol and water were distilled off as by-products. The obtained polysiloxane solution (LS-1) containing silicon dioxide particles had a solid content concentration of 24.3% by weight, and the contents of polysiloxane and silicon dioxide particles in the solid content were 15% by weight and 85% respectively. weight%. The polysiloxane in the obtained silicon dioxide particle-containing polysiloxane solution (LS-1) is derived from methyltrimethoxysilane, trifluoropropyltrimethoxysilane, and 3-trimethoxysilane. The molar ratios of each repeating unit of silylpropylsuccinic anhydride and γ-acryloxypropyltrimethoxysilane are 1.0 mol%, 8.0 mol%, 1.0 mol% and 90.0 mol% respectively.
實施例1隔離壁用樹脂組成物(P-1) Example 1 Resin composition for partition walls (P-1)
於作為白色顏料的二氧化鈦顏料(R-960;日本巴斯夫(Japan BASF)(股)製造(以下「R-960」))5.00g中混合作為樹脂的藉由合成例1而獲得的聚矽氧烷(PSL-1)溶液5.00g,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-1)。另外,將作為有機金屬化合物的雙(乙醯丙酮)鈀1.00g、作為具有磷原子的配位性化合物的三苯基膦0.861g(相對於有機金屬化合物為等莫耳量)溶解於DAA8.139g中,獲得有機金屬化合物溶液(OM-1)。 The polysiloxane obtained by Synthesis Example 1 as a resin was mixed with 5.00 g of titanium dioxide pigment (R-960; manufactured by Japan BASF Co., Ltd. (hereinafter "R-960")) as a white pigment. 5.00 g of the (PSL-1) solution was dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion liquid (MW-1). In addition, 1.00 g of bis(acetylacetone)palladium as an organometallic compound and 0.861g of triphenylphosphine as a coordination compound having a phosphorus atom (equimolar amounts relative to the organometallic compound) were dissolved in DAA8. In 139 g, an organic metal compound solution (OM-1) was obtained.
其次,使所述顏料分散液(MW-1)9.98g、所述有機金屬化合物溶液(OM-1)1.86g、聚矽氧烷(PSL-1)溶液0.98g、作為光聚合起始劑的乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯肟)(「豔佳固(Irgacure)」(註冊商標)OXE-02、日 本巴斯夫(Japan BASF)(股)製造(以下「OXE-2」))0.050g、雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦(「豔佳固(Irgacure)」819、日本巴斯夫(Japan BASF)(股)製造(以下「IC-819」))0.400g、作為光鹼產生劑的2-(3-苯甲醯基苯基)丙酸1,2-二異丙基-3-[雙(二甲基胺基)亞甲基]胍(WPBG-266(商品名)、富士膠片和光純藥(股)製造(以下「WPBG-266」))0.100g、作為光聚合性化合物的二季戊四醇六丙烯酸酯(「卡亞拉得(KAYARAD)」(註冊商標)DPHA、新日本藥業(股)製造(以下「DPHA」))1.20g、作為防液化合物的含光聚合性氟的化合物(「美佳法(Megafac)」(註冊商標)RS-76-E、DIC(股)製造(以下「RS-76-E」))的40重量%PGMEA稀釋溶液1.00g、3',4'-環氧基環己基甲基-3,4-環氧基環己烷羧酸酯(「賽羅西德(Celloxide)」(註冊商標)2021P、大賽璐(Daicel)(股)製造(以下「賽羅西德(Celloxide)(註冊商標)2021P」))0.100g、乙烯雙(氧乙烯)雙[3-(5-第三丁基-4-羥基-間甲苯)丙酸酯](「易璐諾斯(IRGANOX)」(註冊商標)1010、日本巴斯夫(Japan BASF)(股)製造(以下「易璐諾斯(IRGANOX)(註冊商標)1010」))0.030g及丙烯酸系界面活性劑(「畢克(BYK)」(註冊商標)352、日本畢克化學(BYK-Chemie Japan)(股)製造(以下「畢克(BYK)-352」))的PGMEA 10重量%稀釋溶液0.100g(相當於濃度500ppm)溶解於溶媒PGMEA 4.20g中,並進行攪拌。利用5.0μm的過濾器對所得的混合物進行過濾,獲得隔離壁用樹脂組成物(P-1)。 Next, 9.98g of the pigment dispersion liquid (MW-1), 1.86g of the organic metal compound solution (OM-1), 0.98g of polysiloxane (PSL-1) solution, and as a photopolymerization initiator were prepared. Ethyl ketone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-,1-(O-acetyl oxime) ("Yanjiagu( Irgacure" (registered trademark) OXE-02, Japan (hereinafter "OXE-2")) manufactured by Japan BASF Co., Ltd.) 0.050 g, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide ("Irgacure )" 819, manufactured by Japan BASF Co., Ltd. (hereinafter "IC-819")) 0.400g, 2-(3-benzylphenyl)propionic acid 1,2- as a photobase generator Diisopropyl-3-[bis(dimethylamino)methylene]guanidine (WPBG-266 (trade name), manufactured by Fujifilm and Wako Pure Chemical Industries, Ltd. (hereinafter "WPBG-266")) 0.100 g , 1.20 g of dipentaerythritol hexaacrylate ("KAYARAD" (registered trademark) DPHA, manufactured by Shin Nippon Pharmaceutical Co., Ltd. (hereinafter "DPHA")) as a photopolymerizable compound, as a liquid-proof compound 40% by weight PGMEA dilute solution 1.00 of a photopolymerizable fluorine-containing compound ("Megafac" (registered trademark) RS-76-E, manufactured by DIC Co., Ltd. (hereinafter "RS-76-E")) g, 3',4'-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate ("Celloxide" (registered trademark) 2021P, Daicel) Co., Ltd. (hereinafter "Celloxide (registered trademark) 2021P")) 0.100g, ethylene bis(oxyethylene)bis[3-(5-tert-butyl-4-hydroxy-m-toluene) Propionate] ("IRGANOX" (registered trademark) 1010, manufactured by Japan BASF Co., Ltd. (hereinafter "IRGANOX (registered trademark) 1010")) 0.030g and PGMEA 10 of acrylic surfactant ("BYK" (registered trademark) 352, manufactured by BYK-Chemie Japan Co., Ltd. (hereinafter "BYK-352")) Dissolve 0.100g of the weight% diluted solution (equivalent to a concentration of 500ppm) in 4.20g of the solvent PGMEA and stir. The obtained mixture was filtered with a 5.0 μm filter to obtain a resin composition (P-1) for partition walls.
實施例2~實施例3 隔離壁用樹脂組成物(P-2)~隔離 壁用樹脂組成物(P-3) Example 2~Example 3 Resin composition (P-2) for partition walls~Isolation Wall resin composition (P-3)
除了分別使用所述聚矽氧烷(PSL-2)或(PSL-3)溶液代替聚矽氧烷(PSL-1)溶液以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-2)及(P-3)。 A resin composition for partition walls (P- 2) and (P-3).
實施例4隔離壁用樹脂組成物(P-4) Example 4 Resin composition for partition walls (P-4)
除了使用「美佳法(Megafac)」(註冊商標)F477(大日本油墨化學工業(股)製造)40重量%PGMEA稀釋溶液代替RS-76-E的40重量%PGMEA稀釋溶液以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-4)。 The same procedure as Example 1 was used except that a 40% by weight PGMEA diluted solution of "Megafac" (registered trademark) F477 (manufactured by Dainippon Ink Chemical Industry Co., Ltd.) was used instead of the 40% by weight PGMEA diluted solution of RS-76-E. A resin composition (P-4) for partition walls was obtained in the same manner.
實施例5隔離壁用樹脂組成物(P-5) Example 5 Resin composition for partition walls (P-5)
將作為白色顏料的R-960 5.00g、作為樹脂的聚矽氧烷(PSL-4)溶液5.00g混合,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-4)。將所述顏料分散液(MW-4)9.98g、所述有機金屬化合物溶液(OM-1)1.86g、所述聚矽氧烷(PSL-4)溶液1.16g、作為光鹼產生劑的WPBG-266 0.10g、作為防液化合物的F477的40重量%PGMEA稀釋溶液1.00g、賽羅西德(Celloxide)(註冊商標)2021P 0.100g、作為醌二疊氮化合物的THP-17(商品名,東洋合成工業(股)製造)1.60g、界面活性劑畢克(BYK)-352的PGMEA 10重量%稀釋溶液0.100g及PGMEA 4.10g混合,並進行攪拌。利用5.0μm的過濾器對所得的混合物進行過濾,獲得隔離壁用樹脂組成物(P-5)。 5.00g of R-960 as a white pigment and 5.00g of a polysiloxane (PSL-4) solution as a resin were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW -4). 9.98g of the pigment dispersion (MW-4), 1.86g of the organometallic compound solution (OM-1), 1.16g of the polysiloxane (PSL-4) solution, and WPBG as a photobase generator -266 0.10g, 1.00g of 40% by weight PGMEA diluted solution of F477 as a liquid repellent compound, Celloxide (registered trademark) 2021P 0.100g, THP-17 (trade name, 1.60 g of Toyo Gosei Industry Co., Ltd.), 0.100 g of a 10% by weight PGMEA diluted solution of the surfactant BYK-352, and 4.10 g of PGMEA were mixed and stirred. The obtained mixture was filtered with a 5.0 μm filter to obtain a resin composition (P-5) for partition walls.
實施例6隔離壁用樹脂組成物(P-6) Example 6 Resin composition for partition walls (P-6)
除了使用新癸酸銀代替雙(乙醯丙酮)鈀作為有機金屬化合物以外,與所述有機金屬化合物溶液(OM-1)同樣地製備有機金屬化合物溶液(OM-2)。除了使用有機金屬化合物溶液(OM-2)代替有機金屬化合物溶液(OM-1)以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-6)。 An organometallic compound solution (OM-2) was prepared in the same manner as the organometallic compound solution (OM-1), except that silver neodecanoate was used instead of bis(acetylacetone)palladium as the organometallic compound. A resin composition (P-6) for partition walls was obtained in the same manner as in Example 1, except that an organic metal compound solution (OM-2) was used instead of an organic metal compound solution (OM-1).
實施例7隔離壁用樹脂組成物(P-7) Example 7 Resin composition for partition walls (P-7)
除了使用氯三苯基膦金代替雙(乙醯丙酮)鈀作為有機金屬化合物以外,與所述有機金屬化合物溶液(OM-1)同樣地製備有機金屬化合物溶液(OM-3)。除了使用有機金屬化合物溶液(OM-3)代替有機金屬化合物溶液(OM-1)以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-7)。 An organic metal compound solution (OM-3) was prepared in the same manner as the organic metal compound solution (OM-1), except that gold chlorotriphenylphosphine was used instead of bis(acetyl acetonate)palladium as the organic metal compound. A resin composition (P-7) for partition walls was obtained in the same manner as in Example 1, except that the organic metal compound solution (OM-3) was used instead of the organic metal compound solution (OM-1).
實施例8隔離壁用樹脂組成物(P-8) Example 8 Resin composition for partition walls (P-8)
除了使用雙(乙醯丙酮)鉑代替雙(乙醯丙酮)鈀作為有機金屬化合物以外,與所述有機金屬化合物溶液(OM-1)同樣地製備有機金屬化合物溶液(OM-4)。除了使用有機金屬化合物溶液(OM-4)代替有機金屬化合物溶液(OM-1)以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-8)。 An organic metal compound solution (OM-4) was prepared in the same manner as the organic metal compound solution (OM-1) except that bis(acetylacetone)platinum was used instead of bis(acetylacetone)palladium as the organic metal compound. A resin composition (P-8) for partition walls was obtained in the same manner as in Example 1, except that the organic metal compound solution (OM-4) was used instead of the organic metal compound solution (OM-1).
實施例9隔離壁用樹脂組成物(P-9) Example 9 Resin composition for partition walls (P-9)
除了將有機金屬化合物溶液(OM-1)的添加量變更為0.929g、聚矽氧烷(PSL-1)溶液的添加量變更為1.41g、作為溶媒的PGMEA 4.20g變更為PGMEA 4.70g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-9)。 In addition to changing the added amount of the organometallic compound solution (OM-1) to 0.929g, the added amount of the polysiloxane (PSL-1) solution to 1.41g, and the PGMEA 4.20g as the solvent to PGMEA 4.70g, A resin composition (P-9) for partition walls was obtained in the same manner as in Example 1.
實施例10 隔離壁用樹脂組成物(P-10) Example 10 Resin composition for partition walls (P-10)
除了將有機金屬化合物溶液(OM-1)的添加量變更為0.400g、聚矽氧烷(PSL-1)溶液的添加量變更為1.940g、作為溶媒的PGMEA 4.20g變更為PGMEA 6.27g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-10)。 In addition to changing the added amount of the organometallic compound solution (OM-1) to 0.400g, the added amount of the polysiloxane (PSL-1) solution to 1.940g, and the PGMEA 4.20g as the solvent to PGMEA 6.27g, A resin composition (P-10) for partition walls was obtained in the same manner as in Example 1.
實施例11 隔離壁用樹脂組成物(P-11) Example 11 Resin composition for partition walls (P-11)
除了將有機金屬化合物溶液(OM-1)的添加量變更為4.595g、聚矽氧烷(PSL-1)溶液的添加量變更為0.010g、作為溶媒的PGMEA 4.20g變更為PGMEA 2.92g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-11)。 In addition to changing the added amount of the organometallic compound solution (OM-1) to 4.595g, the added amount of the polysiloxane (PSL-1) solution to 0.010g, and the PGMEA 4.20g as the solvent to PGMEA 2.92g, A resin composition (P-11) for partition walls was obtained in the same manner as in Example 1.
實施例12 隔離壁用樹脂組成物(P-12) Example 12 Resin composition for partition walls (P-12)
將作為白色顏料的R-960 5.00g、作為樹脂的聚矽氧烷(PSL-1)溶液5.00g、作為黑色顏料的氮化鈦0.01g混合,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-2)。除了添加9.99g顏料分散液(MW-2)代替顏料分散液(MW-1),將聚矽氧烷(PSL-1)溶液的添加量變更為1.38g,使用作為溶媒的PGMEA 4.72g以外,與實施例9同樣地獲得隔離壁用樹脂組成物(P-12)。 Mix 5.00g of R-960 as a white pigment, 5.00g of polysiloxane (PSL-1) solution as a resin, and 0.01g of titanium nitride as a black pigment, and use a mill-type disperser filled with zirconia beads. Dispersion was performed to obtain a pigment dispersion liquid (MW-2). In addition to adding 9.99g of pigment dispersion (MW-2) instead of pigment dispersion (MW-1), changing the amount of polysiloxane (PSL-1) solution to 1.38g, and using 4.72g of PGMEA as a solvent, A resin composition (P-12) for partition walls was obtained in the same manner as in Example 9.
實施例13 隔離壁用樹脂組成物(P-13) Example 13 Resin composition for partition walls (P-13)
將作為樹脂的聚矽氧烷(PSL-1)溶液10.0g、作為黑色顏料的氮化鈦0.15g混合,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-3)。除了添加9.99g顏料分散液 (MW-3)代替顏料分散液(MW-1),將聚矽氧烷(PSL-1)溶液的添加量變更為15.16g、PGMEA的添加量自4.20g變更為0.11g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-13)。 10.0 g of a polysiloxane (PSL-1) solution as a resin and 0.15 g of titanium nitride as a black pigment were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW -3). In addition to adding 9.99g of pigment dispersion (MW-3) Instead of the pigment dispersion (MW-1), the addition amount of the polysiloxane (PSL-1) solution was changed to 15.16g, and the addition amount of PGMEA was changed from 4.20g to 0.11g. 1A resin composition for partition walls (P-13) was obtained in the same manner.
實施例14 隔離壁用樹脂組成物(P-14) Example 14 Resin composition for partition walls (P-14)
除了使用作為有機金屬化合物的雙(乙醯丙酮)鈀的10%DAA溶液1.85g代替有機金屬化合物溶液(OM-1),將聚矽氧烷(PSL-1)溶液的添加量變更為1.34g、作為溶媒的PGMEA 4.20g變更為PGMEA 3.85g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-14)。 In addition to using 1.85 g of a 10% DAA solution of bis(acetylacetone)palladium as an organometallic compound instead of the organometallic compound solution (OM-1), the added amount of the polysiloxane (PSL-1) solution was changed to 1.34g. , except that 4.20 g of PGMEA as the solvent was changed to 3.85 g of PGMEA, and a resin composition (P-14) for partition walls was obtained in the same manner as in Example 1.
實施例15 隔離壁用樹脂組成物(P-15) Example 15 Resin composition for partition walls (P-15)
除了不添加光鹼產生劑WPBG-266,將聚矽氧烷(PSL-1)溶液的添加量變更為1.21g、作為溶媒的PGMEA 4.20g變更為PGMEA 4.07g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-15)。 Obtained in the same manner as in Example 1 except that the photobase generator WPBG-266 was not added, the added amount of the polysiloxane (PSL-1) solution was changed to 1.21g, and the PGMEA 4.20g as the solvent was changed to PGMEA 4.07g. Resin composition for partition walls (P-15).
實施例16 隔離壁用樹脂組成物(P-16) Example 16 Resin composition for partition wall (P-16)
除了不添加防液化合物RS-76-E的40重量%PGMEA稀釋溶液,將聚矽氧烷(PSL-1)溶液的添加量變更為2.01g、作為溶媒的PGMEA 4.20g變更為PGMEA 4.17g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-16)。 In addition to not adding the 40% by weight PGMEA dilute solution of the liquid repellent compound RS-76-E, the addition amount of the polysiloxane (PSL-1) solution was changed to 2.01g, and the PGMEA 4.20g as the solvent was changed to PGMEA 4.17g. , a resin composition (P-16) for partition walls was obtained in the same manner as in Example 1.
比較例1隔離壁用樹脂組成物(P-17) Comparative Example 1 Resin composition for partition wall (P-17)
除了添加有機金屬化合物溶液(OM-5)0.867g代替有機金屬化合物溶液(OM-1),所述有機金屬化合物溶液(OM-5)是使用 作為具有磷原子的配位性化合物的三苯基膦1.861g、DAA 8.139g而獲得,將聚矽氧烷(PSL-1)溶液的添加量變更為1.41g、PGMEA的添加量自4.20g變更為4.76g以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-17)。 In addition to adding 0.867g of the organometallic compound solution (OM-5) instead of the organometallic compound solution (OM-1), the organometallic compound solution (OM-5) was used 1.861 g of triphenylphosphine and 8.139 g of DAA were obtained as a coordination compound having a phosphorus atom, and the added amount of the polysiloxane (PSL-1) solution was changed to 1.41 g, and the added amount of PGMEA was changed from 4.20 g. A resin composition (P-17) for partition walls was obtained in the same manner as in Example 1 except that the weight was 4.76 g.
比較例2隔離壁用樹脂組成物(P-18) Comparative Example 2 Resin composition for partition wall (P-18)
將作為白色顏料的R-960 5.00g、作為樹脂的聚矽氧烷(PSL-1)溶液5.00g及作為黑色顏料的氮化鈦0.10g混合,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-4)。其次,將所述顏料分散液(MW-4)10.02g、所述聚矽氧烷(PSL-1)溶液1.73g、作為光聚合起始劑的OXE-02 0.050g、IC-819 0.400g、作為光鹼產生劑的WPBG-266 0.10g、作為光聚合性化合物的DPHA 1.20g、作為防液化合物的RS-76-E的40重量%PGMEA稀釋溶液1.00g、賽羅西德(Celloxide)(註冊商標)2021P 0.100g、易璐諾斯(IRGANOX)(註冊商標)1010 0.030g、作為界面活性劑的畢克(BYK)-352的PGMEA 10重量%稀釋溶液0.100g及作為溶媒的PGMEA 5.31g混合,並進行攪拌。利用5.0μm的過濾器對所得的混合物進行過濾,獲得隔離壁用樹脂組成物(P-18)。
Mix 5.00g of R-960 as a white pigment, 5.00g of polysiloxane (PSL-1) solution as a resin, and 0.10g of titanium nitride as a black pigment, and use a mill-type disperser filled with zirconia beads. Dispersion was performed to obtain a pigment dispersion liquid (MW-4). Next, 10.02g of the pigment dispersion (MW-4), 1.73g of the polysiloxane (PSL-1) solution, 0.050g of OXE-02 as a photopolymerization initiator, 0.400g of IC-819, 0.10g of WPBG-266 as a photobase generator, 1.20g of DPHA as a photopolymerizable compound, 1.00g of a 40% by weight PGMEA diluted solution of RS-76-E as a liquid-proof compound, Celloxide ( Registered trademark) 2021P 0.100g, IRGANOX (registered trademark) 1010 0.030g, BYK-352 as
比較例3隔離壁用樹脂組成物(P-19) Comparative Example 3 Resin composition for partition walls (P-19)
將作為白色顏料的R-960 5.00g、作為樹脂的聚矽氧烷(PSL-1)溶液5.00g及作為黑色顏料的氮化鋯0.10g混合,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-5)。除了使用顏料分散液(MW-5)代替顏料分散液(MW-4)以外,與 比較例2同樣地獲得隔離壁用樹脂組成物(P-19)。 Mix 5.00g of R-960 as a white pigment, 5.00g of polysiloxane (PSL-1) solution as a resin, and 0.10g of zirconium nitride as a black pigment, and use a mill-type disperser filled with zirconia beads. Dispersion was carried out to obtain a pigment dispersion liquid (MW-5). In addition to using pigment dispersion (MW-5) instead of pigment dispersion (MW-4), it is the same as In Comparative Example 2, a resin composition (P-19) for partition walls was obtained in the same manner.
比較例4隔離壁用樹脂組成物(P-20) Comparative Example 4 Resin composition for partition walls (P-20)
將作為白色顏料的R-960 5.00g、作為樹脂的聚矽氧烷(PSL-1)溶液5.00g及作為黑色顏料的、紅色顏料PR254與藍色顏料PB64的重量比60/40的混合顏料0.05g混合,使用填充有氧化鋯珠的磨機型分散機進行分散,而獲得顏料分散液(MW-6)。除了使用顏料分散液(MW-6)代替顏料分散液(MW-4)以外,與比較例2同樣地獲得隔離壁用樹脂組成物(P-20)。 5.00g of R-960 as the white pigment, 5.00g of the polysiloxane (PSL-1) solution as the resin, and 0.05 of the mixed pigment as the black pigment, with a weight ratio of 60/40 of the red pigment PR254 and the blue pigment PB64. g, and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion liquid (MW-6). A resin composition (P-20) for partition walls was obtained in the same manner as in Comparative Example 2, except that the pigment dispersion liquid (MW-6) was used instead of the pigment dispersion liquid (MW-4).
比較例5隔離壁用樹脂組成物(P-21) Comparative Example 5 Resin composition for partition walls (P-21)
除了使用三(乙醯丙酮)鐵代替雙(乙醯丙酮)鉑作為有機金屬化合物以外,與所述有機金屬化合物溶液(OM-1)同樣地製備有機金屬化合物溶液(OM-5)。除了使用有機金屬化合物溶液(OM-5)代替有機金屬化合物溶液(OM-1)以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-21)。 An organic metal compound solution (OM-5) was prepared in the same manner as the organic metal compound solution (OM-1) except that tris(acetylacetonate)iron was used instead of bis(acetylacetylacetonate)platinum as the organic metal compound. A resin composition (P-21) for partition walls was obtained in the same manner as in Example 1, except that the organic metal compound solution (OM-5) was used instead of the organic metal compound solution (OM-1).
比較例6隔離壁用樹脂組成物(P-22) Comparative Example 6 Resin composition for partition walls (P-22)
除了使用雙(乙醯丙酮)鎳代替雙(乙醯丙酮)鉑作為有機金屬化合物以外,與所述有機金屬化合物溶液(OM-1)同樣地製備有機金屬化合物溶液(OM-6)。除了使用有機金屬化合物溶液(OM-6)代替有機金屬化合物溶液(OM-1)以外,與實施例1同樣地獲得隔離壁用樹脂組成物(P-22)。 An organic metal compound solution (OM-6) was prepared in the same manner as the organic metal compound solution (OM-1), except that bis(acetylacetone)nickel was used instead of bis(acetylacetone)platinum as the organic metal compound. A resin composition (P-22) for partition walls was obtained in the same manner as in Example 1, except that the organic metal compound solution (OM-6) was used instead of the organic metal compound solution (OM-1).
將實施例1~實施例16及比較例1~比較例6的組成匯總示於表2~表3中。 The compositions of Examples 1 to 16 and Comparative Examples 1 to 6 are collectively shown in Tables 2 to 3.
製備例1 顏色變換發光材料組成物(CL-1) Preparation Example 1 Color-changing luminescent material composition (CL-1)
將綠色量子點材料(路米特(Lumidot)640 CdSe/ZnS、平均粒徑6.3nm:奧德里奇(Aldrich)公司製造)的0.5重量%甲苯溶液20重量份、DPHA 45重量份、「豔佳固(Irgacure)」(註冊商標)907(日本巴斯夫(Japan BASF)(股)製造)5重量份、丙烯酸樹脂(SPCR-18(商品名)、昭和電工(股)製造)的30重量%PGMEA溶液166重量份及甲苯97重量份混合並進行攪拌而均勻地溶解。利用0.45μm的注射器過濾器對所得的混合物進行過濾,製備顏色變換發光材料組成物(CL-1)。 20 parts by weight of a 0.5% by weight toluene solution of a green quantum dot material (Lumidot 640 CdSe/ZnS, average particle diameter 6.3nm: manufactured by Aldrich), 45 parts by weight of DPHA, and "Yanjia" A 30% by weight PGMEA solution of 5 parts by weight of "Irgacure" (registered trademark) 907 (manufactured by Japan BASF Co., Ltd.) and acrylic resin (SPCR-18 (trade name), manufactured by Showa Denko Co., Ltd.) 166 parts by weight and 97 parts by weight of toluene were mixed and stirred to dissolve uniformly. The obtained mixture was filtered using a 0.45 μm syringe filter to prepare a color-changing luminescent material composition (CL-1).
製備例2 顏色變換發光材料組成物(CL-2) Preparation Example 2 Color-changing luminescent material composition (CL-2)
除了使用藉由合成例5而獲得的綠色螢光體G-1 0.4重量份來代替綠色量子點材料,將甲苯的添加量變更為117重量份以外,與製備例1同樣地製備顏色變換發光材料組成物(CL-2)。 A color conversion luminescent material was prepared in the same manner as in Preparation Example 1, except that 0.4 parts by weight of the green phosphor G-1 obtained in Synthesis Example 5 was used instead of the green quantum dot material and the amount of toluene added was changed to 117 parts by weight. Composition (CL-2).
製備例3 顏色變換發光材料組成物(CL-3) Preparation Example 3 Color-changing luminescent material composition (CL-3)
除了使用藉由合成例6而獲得的紅色螢光體R-1 0.4重量份來代替綠色量子點材料,將甲苯的添加量變更為117重量份以外,與製備例1同樣地製備顏色變換發光材料組成物(CL-3)。 A color conversion luminescent material was prepared in the same manner as in Preparation Example 1, except that 0.4 parts by weight of the red phosphor R-1 obtained in Synthesis Example 6 was used instead of the green quantum dot material and the amount of toluene added was changed to 117 parts by weight. Composition (CL-3).
製備例4 彩色濾光片形成材料(CF-1) Preparation Example 4 Color filter forming material (CF-1)
將C.I.顏料綠(Pigment Green)5990g、C.I.顏料黃(Pigment Yellow)150 60g、高分子分散劑(「畢克(BYK)」(註冊商標)-6919(商品名)畢克化學(BYK-Chemie)公司製造(以下「畢克(BYK)-6919」))75g、黏合劑樹脂(「艾迪科阿克爾斯(ADEKA ARKLS)」(註冊商標)WR301(商品名)艾迪科(ADEKA)(股)製造)100g及PGMEA 675g混合而製作漿料。用管(tube)將放入有漿料的燒杯與戴諾磨機(Dyno-Mill)相連,使用直徑0.5mm的氧化鋯珠作為介質,以周速14m/s進行8小時分散處理,製作顏料綠59分散液(GD-1)。 Mix C.I. Pigment Green (Pigment Green) 5990g, C.I. Pigment Yellow (Pigment Yellow) 150-60g, polymer dispersant ("BYK" (registered trademark)-6919 (trade name) BYK-Chemie) Made by the company (hereinafter "BYK-6919")) 75g, adhesive resin ("ADEKA ARKLS" (registered trademark) WR301 (trade name) manufactured by ADEKA Co., Ltd.) 100g and PGMEA 675g were mixed to prepare a slurry. Connect the beaker containing the slurry to the Dyno-Mill with a tube, use zirconia beads with a diameter of 0.5mm as the medium, and conduct dispersion processing at a peripheral speed of 14m/s for 8 hours to produce pigments. Green 59 dispersion (GD-1).
將顏料綠59分散液(GD-1)56.54g、丙烯酸樹脂(「沙克馬(Cyclomer)」(註冊商標)P(ACA)Z250(商品名)大賽璐湛新(daicel-allnex)(股)製造(以下「P(ACA)Z250」))3.14g、DPHA 2.64g、光聚合起始劑(「奧普陶瑪(Optomer)」(註冊商標)NCI-831(商品名)艾迪科(ADEKA)(股)製造(以下「NCI-831」))0.330g、界面活性劑(「畢克(BYK)」(註冊商標)-333(商品名)畢克化學(BYK-Chemie)公司製造(以下「畢克(BYK)-333」))0.04g、作為聚合抑制劑的BHT 0.01g及作為溶媒的PGMEA 37.30g混合,製作彩色濾光片形成材料(CF-1)。 56.54g of Pigment Green 59 dispersion (GD-1), acrylic resin ("Cyclomer" (registered trademark) P (ACA) Z250 (trade name) manufactured by Daicel-allnex Co., Ltd. (hereinafter "P(ACA)Z250")) 3.14g, DPHA 2.64g, photopolymerization initiator ("Optomer" (registered trademark) NCI-831 (trade name) ADEKA Co., Ltd. (hereinafter "NCI-831")) 0.330g, surfactant ("BYK" (registered trademark)-333 (trade name) manufactured by BYK-Chemie Co., Ltd. (hereinafter " 0.04g of BYK-333), 0.01g of BHT as a polymerization inhibitor, and 37.30g of PGMEA as a solvent were mixed to prepare a color filter forming material (CF-1).
製備例5遮光隔離壁用樹脂組成物 Preparation Example 5 Resin composition for light-shielding partition walls
將碳黑(MA100(商品名)三菱化學(股)製造)150g、高分子分散劑畢克(BYK)-6919 75g、P(ACA)Z250 100g及PGMEA 675g混合,製作漿料。用管(tube)將放入有漿料的燒杯與戴諾磨機相連,使用直徑0.5mm的氧化鋯珠作為介質,以周速14m/s進行8小時分散處理,製作顏料分散液(MB-1)。 150g of carbon black (MA100 (trade name) manufactured by Mitsubishi Chemical Co., Ltd.), 75g of polymer dispersant BYK-6919, 100g of P(ACA)Z250, and 675g of PGMEA were mixed to prepare a slurry. Connect the beaker containing the slurry to the Dyno mill with a tube, use zirconia beads with a diameter of 0.5mm as the medium, and conduct dispersion processing at a peripheral speed of 14m/s for 8 hours to prepare a pigment dispersion (MB- 1).
將顏料分散液(MB-1)56.54g、P(ACA)Z250 3.14g、DPHA 2.64g、NCI-831 0.330g、畢克(BYK)-333 0.04g、作為聚 合抑制劑的第三丁基兒茶酚0.01g及PGMEA 37.30g混合,製作遮光隔離壁用樹脂組成物。 Pigment dispersion (MB-1) 56.54g, P(ACA)Z250 3.14g, DPHA 2.64g, NCI-831 0.330g, BYK-333 0.04g, as poly 0.01g of tert-butylcatechol, which is a compound inhibitor, and 37.30g of PGMEA were mixed to prepare a resin composition for light-shielding partition walls.
製備例6低折射率層形成材料 Preparation Example 6 Low refractive index layer forming material
將藉由合成例6而獲得的含二氧化矽粒子的聚矽氧烷溶液(LS-1)5.350g、乙二醇單-第三丁醚1.170g及DAA 3.48g混合後,利用0.45μm的注射器過濾器進行過濾,製備低折射率層形成材料。 After mixing 5.350 g of the silica particle-containing polysiloxane solution (LS-1) obtained in Synthesis Example 6, 1.170 g of ethylene glycol mono-tert-butyl ether, and 3.48 g of DAA, use a 0.45 μm Filtration was performed with a syringe filter to prepare a low refractive index layer forming material.
製備例7 黃色有機保護層形成材料(YL-1) Preparation Example 7 Yellow organic protective layer forming material (YL-1)
將C.I.顏料黃150 150g、高分子分散劑(「畢克(BYK)」(註冊商標)-6919(商品名)畢克化學(BYK-Chemie)公司製造(以下「畢克(BYK)-6919」))75g、黏合劑樹脂(「艾迪科阿克爾斯(ADEKA ARKLS)」(註冊商標)WR301(商品名)艾迪科(ADEKA)(股)製造)100g及PGMEA 675g混合而製作漿料。用管將放入有漿料的燒杯與戴諾磨機相連,使用直徑0.5mm的氧化鋯珠作為介質,以周速14m/s進行8小時分散處理,製作顏料黃150分散液(YD-1)。 Mix C.I. Pigment Yellow 150 150g, polymer dispersant ("BYK" (registered trademark)-6919 (trade name) manufactured by BYK-Chemie Co., Ltd. (hereinafter "BYK-6919") )) 75g, 100g of binder resin ("ADEKA ARKLS" (registered trademark) WR301 (trade name) manufactured by ADEKA Co., Ltd.) and 675g of PGMEA were mixed to prepare a slurry. Connect the beaker containing the slurry to the Dyno mill with a tube, use zirconia beads with a diameter of 0.5mm as the medium, and conduct dispersion processing at a peripheral speed of 14m/s for 8 hours to prepare Pigment Yellow 150 dispersion (YD-1 ).
使顏料黃150分散液(YD-1)3.09g、作為樹脂的聚矽氧烷(PSL-1)溶液23.54g、作為光聚合性化合物的DPHA 6.02g、作為有機金屬化合物的使用新癸酸銀製備的有機金屬化合物溶液(OM-2)6.02g、作為光聚合起始劑的OXE-02 0.20g、IC-819 0.40g、易璐諾斯(IRGANOX)(註冊商標)1010 0.060g及畢克(BYK)352的PGMEA 10重量%稀釋溶液0.050g(相當於濃度500ppm) 溶解於溶媒PGMEA 61.15g中,並進行攪拌。利用5.0μm的過濾器對所得的混合物進行過濾,獲得黃色有機保護層形成材料(YL-1)。 3.09g of Pigment Yellow 150 dispersion (YD-1), 23.54g of polysiloxane (PSL-1) solution as resin, 6.02g of DPHA as photopolymerizable compound, and silver neodecanoate as organic metal compound were used. The prepared organometallic compound solution (OM-2) 6.02g, OXE-02 0.20g as photopolymerization initiator, IC-819 0.40g, IRGANOX (registered trademark) 1010 0.060g and BYK (BYK)352 PGMEA 10% by weight dilute solution 0.050g (equivalent to a concentration of 500ppm) Dissolve in 61.15g of solvent PGMEA and stir. The obtained mixture was filtered with a 5.0 μm filter to obtain a yellow organic protective layer forming material (YL-1).
(實施例17~實施例20、實施例22~實施例28、實施例38~實施例45、比較例7~比較例9) (Examples 17 to 20, Examples 22 to 28, Examples 38 to 45, Comparative Examples 7 to 9)
使用10cm見方的無鹼玻璃基板(AGC科技玻璃(AGC Techno Glass)(股)製造、厚度0.7mm)作為基底基板。於其上旋塗表4~表5所示的隔離壁用樹脂組成物,使用加熱板(商品名SCW-636、大日本網屏製造(股)製造),於溫度90℃下乾燥2分鐘,製作乾燥膜。針對所製作的乾燥膜,使用平行光遮罩對準曝光機(商品名PLA-501F、佳能(Cannon)(股)製造),將超高壓水銀燈作為光源,介隔光罩,以曝光量200mJ/cm2(i射線)進行曝光。其後,使用自動顯影裝置(瀧澤產業(股)製造的「AD-2000(商品名)」),使用0.045重量%氫氧化鉀水溶液進行100秒噴淋顯影,繼而使用水進行30秒淋洗。進而,使用烘箱(商品名IHPS-222、愛斯佩克(Espec)(股)製造),於空氣中於溫度230℃下加熱30分鐘,於玻璃基板上形成使高度10μm、寬度20μm的隔離壁形成為短邊30μm、長邊150μm的間距間隔的格子狀圖案的隔離壁。 A 10 cm square alkali-free glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The resin composition for partition walls shown in Table 4 to Table 5 was spin-coated thereon, and dried at a temperature of 90° C. for 2 minutes using a hot plate (trade name SCW-636, manufactured by Dainippon Screen Manufacturing Co., Ltd.). Make a dry film. For the produced dry film, a parallel light mask was used to align the exposure machine (trade name PLA-501F, manufactured by Cannon Co., Ltd.), an ultra-high-pressure mercury lamp was used as the light source, and the mask was used to expose the film at an exposure dose of 200 mJ/ cm 2 (i-ray) for exposure. Thereafter, an automatic developing device ("AD-2000 (trade name)" manufactured by Takizawa Sangyo Co., Ltd.) was used to perform spray development using a 0.045% by weight potassium hydroxide aqueous solution for 100 seconds, followed by rinsing with water for 30 seconds. Furthermore, using an oven (trade name: IHPS-222, manufactured by Espec Co., Ltd.), it was heated in the air at a temperature of 230° C. for 30 minutes to form a partition wall having a height of 10 μm and a width of 20 μm on the glass substrate. The partition walls were formed in a grid-like pattern with a pitch interval of 30 μm on the short side and 150 μm on the long side.
於由所得的帶隔離壁的基板的隔離壁隔開的區域,於氮氣環境下使用噴墨法,塗佈表4~表5所示的顏色變換發光材料組成物,於100℃下乾燥30分鐘,形成厚度5.0μm的畫素,獲得圖2所示的構成的帶隔離壁的基板。 The color-changing luminescent material composition shown in Table 4 to Table 5 was applied to the area separated by the partition walls of the obtained substrate with partition walls using the inkjet method in a nitrogen atmosphere, and dried at 100° C. for 30 minutes. , forming a pixel with a thickness of 5.0 μm, and obtaining a substrate with partition walls having the structure shown in Figure 2 .
(實施例21) (Example 21)
使用10cm見方的無鹼玻璃基板(AGC科技玻璃(AGC Techno Glass)(股)製造、厚度0.7mm)作為基底基板。於其上旋塗表4所示的隔離壁用樹脂組成物,使用加熱板(商品名SCW-636、大日本網屏製造(股)製造),於溫度90℃下乾燥2分鐘,製作乾燥膜。針對所製作的乾燥膜,使用平行光遮罩對準曝光機(商品名PLA-501F、佳能(Cannon)(股)製造),將超高壓水銀燈作為光源,介隔光罩,以曝光量200mJ/cm2(i射線)進行曝光。其後,使用自動顯影裝置(瀧澤產業(股)製造的「AD-2000(商品名)」),利用2.38重量%氫氧化四甲基銨水溶液進行90秒噴淋顯影,繼而利用水進行30秒淋洗。其後,與之前同樣地,不介隔光罩,以曝光量500mJ/cm2(i射線)進行曝光,進行漂洗。進而,使用烘箱(商品名IHPS-222、愛斯佩克(Espec)(股)製造),於空氣中於溫度230℃下加熱30分鐘,於玻璃基板上形成使高度10μm、寬度20μm的隔離壁形成為短邊30μm、長邊150μm的間距間隔的格子狀圖案的隔離壁。 A 10 cm square alkali-free glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The resin composition for partition walls shown in Table 4 was spin-coated thereon, and dried at a temperature of 90° C. for 2 minutes using a hot plate (trade name SCW-636, manufactured by Dainippon Screen Manufacturing Co., Ltd.) to prepare a dry film. . For the produced dry film, a parallel light mask was used to align the exposure machine (trade name PLA-501F, manufactured by Cannon Co., Ltd.), an ultra-high-pressure mercury lamp was used as the light source, and the mask was used to expose the film at an exposure dose of 200 mJ/ cm 2 (i-ray) for exposure. Thereafter, an automatic developing device ("AD-2000 (trade name)" manufactured by Takizawa Sangyo Co., Ltd.) was used to perform spray development using a 2.38% by weight tetramethylammonium hydroxide aqueous solution for 90 seconds, and then using water for 30 seconds. Rinse. Thereafter, in the same manner as before, exposure was performed with an exposure dose of 500 mJ/cm 2 (i-ray) without interposing a light shield, and rinsing was performed. Furthermore, using an oven (trade name: IHPS-222, manufactured by Espec Co., Ltd.), it was heated in the air at a temperature of 230° C. for 30 minutes to form a partition wall having a height of 10 μm and a width of 20 μm on the glass substrate. The partition walls were formed in a grid-like pattern with a pitch interval of 30 μm on the short side and 150 μm on the long side.
於由所得的帶隔離壁的基板的隔離壁隔開的區域,於氮氣環境下使用噴墨法,塗佈表4~表5所示的顏色變換發光材料組成物,於100℃下乾燥30分鐘,形成厚度5.0μm的畫素,獲得圖2所示的構成的帶隔離壁的基板。 The color-changing luminescent material composition shown in Table 4 to Table 5 was applied to the area separated by the partition walls of the obtained substrate with partition walls using the inkjet method in a nitrogen atmosphere, and dried at 100° C. for 30 minutes. , forming a pixel with a thickness of 5.0 μm, and obtaining a substrate with partition walls having the structure shown in Figure 2 .
(實施例29) (Example 29)
於藉由與實施例18同樣的方法形成畫素後的帶隔離壁的基 板旋塗低折射率層形成材料,使用加熱板(商品名SCW-636、大日本網屏製造(股)製造),於溫度90℃下乾燥2分鐘,製作乾燥膜。進而,使用烘箱(商品名IHPS-222、愛斯佩克(Espec)(股)製造),於空氣中於溫度90℃下加熱30分鐘,形成低折射率層,獲得圖3所示的構成的帶隔離壁的基板。 After the pixels were formed by the same method as in Example 18, the base with the isolation walls was The low refractive index layer forming material was spin-coated on a plate, using a hot plate (trade name SCW-636, manufactured by Dainippon Screen Manufacturing Co., Ltd.), and dried at a temperature of 90° C. for 2 minutes to prepare a dry film. Furthermore, using an oven (trade name IHPS-222, manufactured by Espec Co., Ltd.), it was heated in the air at a temperature of 90° C. for 30 minutes to form a low refractive index layer, and the structure shown in FIG. 3 was obtained. Baseboard with dividing walls.
(實施例30) (Example 30)
於藉由實施例29而獲得的具有低折射率層的帶隔離壁的基板的低折射率層上,使用電漿CVD裝置(PD-220NL、莎姆克(samco)公司製造),形成相當於厚度50nm~1,000nm的無機保護層I的膜厚300nm的氮化矽膜,獲得圖4所示的構成的帶隔離壁的基板。 On the low refractive index layer of the partitioned substrate having the low refractive index layer obtained in Example 29, a plasma CVD device (PD-220NL, manufactured by Samco) was used to form a layer equivalent to The inorganic protective layer I having a thickness of 50 nm to 1,000 nm and the silicon nitride film having a thickness of 300 nm were used to obtain a substrate with partition walls having the structure shown in FIG. 4 .
(實施例31) (Example 31)
於藉由實施例18而獲得的帶隔離壁的基板上,使用電漿CVD裝置(PD-220NL、莎姆克(samco)公司製造),將相當於厚度50nm~1,000nm的無機保護層II的膜厚300nm的氮化矽膜形成於畫素上層。其後,於無機保護層II上,使用藉由製備例6獲得的低折射率層形成材料,藉由與實施例29相同的方法形成厚度1.0μm的低折射率層,獲得圖5所示的構成的帶隔離壁的基板。 On the substrate with partitions obtained in Example 18, a plasma CVD device (PD-220NL, manufactured by Samco) was used to deposit an inorganic protective layer II with a thickness of 50 nm to 1,000 nm. A silicon nitride film with a thickness of 300 nm is formed on the upper layer of the pixel. Thereafter, on the inorganic protective layer II, using the low refractive index layer forming material obtained in Preparation Example 6, a low refractive index layer with a thickness of 1.0 μm was formed by the same method as in Example 29, to obtain the layer shown in Figure 5 A base plate with partition walls.
(實施例32) (Example 32)
於藉由與實施例17同樣的方法獲得的由畫素形成前的帶隔離壁的基板的隔離壁隔開的區域,以硬化後的膜厚成為2.5μm的方式塗佈藉由製備例4而獲得的彩色濾光片形成材料(CF-1),進 行真空乾燥。介隔以帶隔離壁的基板的開口部的區域被曝光的方式設計的光罩,以曝光量40mJ/cm2(i射線)進行曝光。於藉由0.3重量%四甲基銨水溶液進行50秒顯影後,於230℃下進行30分鐘加熱硬化,於由隔離壁隔開的區域形成厚度2.5μm、50μm寬度的彩色濾光片。其後,於彩色濾光片上,於氮氣環境下,使用噴墨法,塗佈藉由製備例2獲得的顏色變換發光材料組成物(CL-2),於100℃下乾燥30分鐘,形成厚度5.0μm的畫素,獲得圖6所示的構成的帶隔離壁的基板。 In the area separated by the partition walls of the substrate with partition walls before pixel formation, which was obtained by the same method as Example 17, the coating prepared in Preparation Example 4 was applied so that the film thickness after curing became 2.5 μm. The obtained color filter forming material (CF-1) was vacuum dried. Exposure was performed at an exposure dose of 40 mJ/cm 2 (i-ray) through a photomask designed so that the opening area of the substrate with partition walls was exposed. After developing with a 0.3% by weight tetramethylammonium aqueous solution for 50 seconds, it was heated and hardened at 230° C. for 30 minutes to form a color filter with a thickness of 2.5 μm and a width of 50 μm in the area separated by the partition wall. Thereafter, the color-changing luminescent material composition (CL-2) obtained in Preparation Example 2 was coated on the color filter using an inkjet method under a nitrogen atmosphere, and dried at 100° C. for 30 minutes to form A pixel with a thickness of 5.0 μm was used to obtain a substrate with partition walls having the structure shown in FIG. 6 .
(實施例33) (Example 33)
於藉由與實施例32同樣的方法獲得的形成有厚度2.5μm、50μm寬度的彩色濾光片的、畫素形成前的帶隔離壁的基板的彩色濾光片上,使用電漿CVD裝置(PD-220NL、莎姆克(samco)公司製造),形成相當於厚度50nm~1,000nm的無機保護層III的膜厚300nm的氮化矽膜。進而,於無機保護層III上,於氮氣環境下,使用噴墨法,塗佈藉由製備例2獲得的顏色變換發光材料組成物(CL-2),於100℃下乾燥30分鐘,形成厚度5.0μm的畫素,獲得圖7所示的構成的帶隔離壁的基板。 On the color filter of the substrate with the partition wall before pixel formation, a color filter with a thickness of 2.5 μm and a width of 50 μm was formed by the same method as in Example 32, using a plasma CVD apparatus ( PD-220NL, manufactured by Samco Corporation), forms a silicon nitride film with a thickness of 300 nm equivalent to an inorganic protective layer III with a thickness of 50 nm to 1,000 nm. Furthermore, the color-converting luminescent material composition (CL-2) obtained in Preparation Example 2 was coated on the inorganic protective layer III using an inkjet method under a nitrogen atmosphere, and dried at 100° C. for 30 minutes to form a thickness of With a pixel of 5.0 μm, a substrate with isolation walls having the structure shown in Figure 7 was obtained.
(實施例34) (Example 34)
使用10cm見方的無鹼玻璃基板(AGC科技玻璃(AGC Techno Glass)(股)製造、厚度0.7mm)作為基底基板。於其上,使用電漿CVD裝置(PD-220NL、莎姆克(samco)公司製造),形成相當於厚度50nm~1,000nm的無機保護層IV的膜厚300nm的氮化 矽膜。除了使用所述基板代替10cm見方的無鹼玻璃基板以外,藉由與實施例31同樣的方法,獲得圖8所示的構成的帶隔離壁的基板。 A 10 cm square alkali-free glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used as the base substrate. On top of it, a plasma CVD device (PD-220NL, manufactured by Samco) is used to form a 300 nm thick nitride film corresponding to an inorganic protective layer IV with a thickness of 50 nm to 1,000 nm. Silicon film. A substrate with partition walls having the structure shown in FIG. 8 was obtained in the same manner as in Example 31, except that the above substrate was used instead of the 10 cm square alkali-free glass substrate.
(實施例35) (Example 35)
於藉由與實施例32同樣的方法獲得的形成有厚度2.5μm、50μm寬度的彩色濾光片的、畫素形成前的帶隔離壁的基板的彩色濾光片上,塗佈藉由製備例7而獲得的黃色有機保護層形成材料(YL-1),進行真空乾燥。介隔以帶隔離壁的基板的開口部的區域被曝光的方式設計的光罩,以曝光量40mJ/cm2(i射線)進行曝光。於藉由0.3重量%四甲基銨水溶液進行50秒顯影後,於230℃下進行30分鐘加熱硬化,形成厚度1.0μm、50μm寬度的黃色有機保護層。進而,於黃色有機保護層上,於氮氣環境下,使用噴墨法,塗佈藉由製備例2獲得的顏色變換發光材料組成物(CL-2),於100℃下乾燥30分鐘,形成厚度5.0μm的畫素,獲得圖7所示的構成的帶隔離壁的基板。 On the color filter of the substrate with partition walls before pixel formation, in which a color filter with a thickness of 2.5 μm and a width of 50 μm was formed in the same manner as in Example 32, coating was made by Preparation Example The yellow organic protective layer forming material (YL-1) obtained in 7. was vacuum dried. Exposure was performed at an exposure dose of 40 mJ/cm 2 (i-ray) through a photomask designed so that the opening area of the substrate with partition walls was exposed. After developing with a 0.3% by weight tetramethylammonium aqueous solution for 50 seconds, it was heated and hardened at 230° C. for 30 minutes to form a yellow organic protective layer with a thickness of 1.0 μm and a width of 50 μm. Furthermore, the color-changing luminescent material composition (CL-2) obtained in Preparation Example 2 was coated on the yellow organic protective layer using an inkjet method under a nitrogen atmosphere, and dried at 100° C. for 30 minutes to form a thickness of With a pixel of 5.0 μm, a substrate with isolation walls having the structure shown in Figure 7 was obtained.
(實施例36) (Example 36)
使用10cm見方的無鹼玻璃基板(AGC科技玻璃(AGC Techno Glass)(股)製造、厚度0.7mm)作為基底基板。於其上塗佈藉由製備例7而獲得的黃色有機保護層形成材料(YL-1),進行真空乾燥。不介隔光罩,於以曝光量40mJ/cm2(i射線)對乾燥膜進行曝光後,於藉由0.3重量%四甲基銨水溶液進行50秒顯影,於230℃下進行30分鐘加熱硬化,形成厚度1.0μm的黃色有機保護層。 除了使用所述基板代替10cm見方的無鹼玻璃基板以外,藉由與實施例31同樣的方法,獲得圖8所示的構成的帶隔離壁的基板。 A 10 cm square alkali-free glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The yellow organic protective layer-forming material (YL-1) obtained in Preparation Example 7 was applied thereon and dried in vacuum. After exposing the dry film to an exposure dose of 40mJ/cm 2 (i-ray) without a light shield, it was developed with a 0.3% by weight tetramethylammonium aqueous solution for 50 seconds, and then heated and hardened at 230°C for 30 minutes. , forming a yellow organic protective layer with a thickness of 1.0 μm. A substrate with partition walls having the structure shown in FIG. 8 was obtained in the same manner as in Example 31, except that the above substrate was used instead of the 10 cm square alkali-free glass substrate.
(實施例37) (Example 37)
使用10cm見方的無鹼玻璃基板(AGC科技玻璃(AGC Techno Glass)(股)製造、厚度0.7mm)作為基底基板。於其上旋塗藉由製備例5獲得的遮光隔離壁形成材料,使用加熱板(商品名SCW-636、大日本網屏製造(股)製造),於溫度90℃下乾燥2分鐘,製作乾燥膜。針對所製作的乾燥膜,使用平行光遮罩對準曝光機(商品名PLA-501F、佳能(Cannon)(股)製造),將超高壓水銀燈作為光源,介隔光罩,以曝光量40mJ/cm2(i射線)進行曝光。其後,使用自動顯影裝置(瀧澤產業(股)製造的「AD-2000(商品名)」),利用0.3重量%四甲基銨水溶液進行50秒顯影,繼而利用水進行30秒淋洗。進而,使用烘箱(商品名IHPS-222、愛斯佩克(Espec)(股)製造),於空氣中於溫度230℃下加熱30分鐘,獲得如下帶遮光隔離壁的基板:於玻璃基板上使高度2.0μm、寬度20μm、厚度每1.0μm的OD值為2.0的隔離壁形成為短邊30μm、長邊150μm的間距間隔的格子狀圖案。其後,藉由與實施例17同樣的方法,獲得如下帶隔離壁的基板:於遮光隔離壁上使高度10μm、寬度20μm的隔離壁形成為與短邊30μm、長邊150μm的間距間隔的遮光隔離壁同樣的格子狀圖案。於由所獲得的帶隔離壁的基板的隔離壁隔開的區域,於氮氣環境下,使用噴墨法,塗佈藉由製備例22獲得的顏色變換發光材料組成物(CL-2),於100 ℃下乾燥30分鐘,形成厚度5.0μm的畫素,獲得圖9所示的構成的帶隔離壁的基板。 A 10 cm square alkali-free glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The light-shielding partition wall-forming material obtained in Preparation Example 5 was spin-coated thereon, and dried using a hot plate (trade name SCW-636, manufactured by Dainippon Screen Manufacturing Co., Ltd.) at a temperature of 90° C. for 2 minutes to produce a dry membrane. For the produced dry film, a parallel light mask was used to align the exposure machine (trade name PLA-501F, manufactured by Cannon Co., Ltd.), an ultra-high-pressure mercury lamp was used as the light source, and the mask was used to expose the film at an exposure dose of 40 mJ/ cm 2 (i-ray) for exposure. Thereafter, an automatic developing device ("AD-2000 (trade name)" manufactured by Takizawa Sangyo Co., Ltd.) was used to perform development with a 0.3% by weight tetramethylammonium aqueous solution for 50 seconds, and then rinsed with water for 30 seconds. Furthermore, using an oven (trade name IHPS-222, manufactured by Espec Co., Ltd.), it was heated in the air at a temperature of 230° C. for 30 minutes to obtain a substrate with light-shielding partition walls as follows: The isolation walls have a height of 2.0 μm, a width of 20 μm, and an OD value of 2.0 per 1.0 μm of thickness. They are formed into a grid-like pattern with pitch intervals of 30 μm on the short side and 150 μm on the long side. Thereafter, in the same manner as in Example 17, a substrate with partition walls was obtained in which partition walls with a height of 10 μm and a width of 20 μm were formed on the light-shielding partition walls at intervals of 30 μm on the short side and 150 μm on the long side. The same lattice pattern as the dividing wall. The color-converting luminescent material composition (CL-2) obtained in Preparation Example 22 was applied to the area separated by the partition walls of the obtained substrate with partition walls using an inkjet method in a nitrogen atmosphere. It was dried at 100° C. for 30 minutes to form pixels with a thickness of 5.0 μm, and a substrate with partition walls having the structure shown in Figure 9 was obtained.
將各實施例及比較例的構成示於表4~表5中。 The structures of each Example and Comparative Example are shown in Tables 4 to 5.
以下示出各實施例及比較例中的評價方法。 The evaluation methods in each Example and Comparative Example are shown below.
<白色顏料的折射率> <Refractive index of white pigment>
關於各實施例及比較例中使用的白色顏料,JIS K7142-2014(製定年月日=2014/04/20)中規定的塑膠的折射率測定方法中,藉由B法(使用顯微鏡的液浸法(貝克線法(Becke's line method))測定折射率。將測定波長設為550nm。其中,使用島津裝置(股)製造製造的「接觸液」來代替JIS K7142-2014中使用的浸液,於浸液溫度:20℃的條件下進行測定。作為顯微鏡,使用偏光顯微鏡「歐佛普(OPTIPHOTO)」(尼康(股)製造)。各準備30個白色顏料的樣品,測定各折射率,將其平均值作為折射率。 Regarding the white pigment used in each example and comparative example, among the refractive index measurement methods for plastics specified in JIS K7142-2014 (enactment date = 2014/04/20), method B (liquid immersion using a microscope) The refractive index was measured using the Becke's line method. The measurement wavelength was set to 550 nm. A "contact liquid" manufactured by Shimadzu Instruments Co., Ltd. was used instead of the immersion liquid used in JIS K7142-2014. Immersion temperature: Measured at 20°C. As a microscope, a polarizing microscope "OPTIPHOTO" (manufactured by Nikon Co., Ltd.) was used. 30 white pigment samples were prepared each, and each refractive index was measured. The average value is used as the refractive index.
<聚矽氧烷及低折射率層的折射率> <Refractive index of polysiloxane and low refractive index layer>
藉由旋轉器將作為各實施例及比較例中使用的隔離壁形成樹脂組成物的原料的聚矽氧烷及利用製備例26獲得的低折射率層形成材料分別塗佈於矽晶圓上,使用加熱板(商品名SCW-636、大日本網屏製造(股)製造),於溫度90℃下乾燥2分鐘。其後,使用烘箱(IHPS-222;愛斯佩克(Espec)(股)製造),於空氣中於230℃下加熱30分鐘,製作硬化膜。使用稜鏡偶合器(PC-2000(麥克恩(Metricon)(股)製造)),於大氣壓下、20℃的條件下,自相對於硬化膜面垂直的方向照射波長550nm的光,測定折射率,四捨五入至小數點以下第三位。 Polysiloxane, which is the raw material of the partition-forming resin composition used in each Example and Comparative Example, and the low-refractive index layer-forming material obtained in Preparation Example 26 were applied to the silicon wafer using a spinner, respectively. Using a hot plate (trade name SCW-636, manufactured by Dainippon Screen Manufacturing Co., Ltd.), it was dried at a temperature of 90° C. for 2 minutes. Thereafter, an oven (IHPS-222; manufactured by Espec Co., Ltd.) was used to heat the film at 230° C. for 30 minutes in the air to produce a cured film. Using a chromium coupler (PC-2000 (manufactured by Metricon Co., Ltd.)), under atmospheric pressure and 20°C, light with a wavelength of 550 nm is irradiated from a direction perpendicular to the cured film surface, and the refractive index is measured. , rounded to the third decimal place.
<解析度> <resolution>
使用旋塗機(商品名1H-360S、米卡薩(Mikasa)(股)製造), 將各實施例及比較例中使用的隔離壁用樹脂組成物以加熱後的膜厚成為10μm的方式旋塗於10cm見方的無鹼玻璃基板上,使用加熱板(商品名SCW-636、大日本網屏製造(股)製造),於溫度90℃下乾燥2分鐘,製作膜厚10μm的乾燥膜。 Use a spin coater (trade name 1H-360S, manufactured by Mikasa Co., Ltd.), The resin composition for partition walls used in each Example and Comparative Example was spin-coated on a 10 cm square alkali-free glass substrate so that the film thickness after heating became 10 μm, using a hot plate (trade name: SCW-636, Dainippon Screen Manufacturing Co., Ltd.), dried at a temperature of 90°C for 2 minutes to produce a dry film with a film thickness of 10 μm.
針對所製作的乾燥膜,使用平行光遮罩對準曝光機(商品名PLA-501F、佳能(Cannon)(股)製造),將超高壓水銀燈作為光源,介隔具有100μm、80μm、60μm、50μm、40μm、30μm及20μm的各寬度的線&空間圖案的遮罩,以曝光量200mJ/cm2(i射線)、100μm的間隙進行曝光。其後,使用自動顯影裝置(瀧澤產業(股)製造的「AD-2000(商品名)」),使用0.045重量%氫氧化鉀水溶液進行100秒噴淋顯影,繼而使用水進行30秒淋洗。 For the produced dry film, a parallel light mask alignment exposure machine (trade name PLA-501F, manufactured by Cannon Co., Ltd.) was used, and an ultrahigh-pressure mercury lamp was used as a light source, with intervals of 100 μm, 80 μm, 60 μm, and 50 μm. , 40 μm, 30 μm, and 20 μm width line & space pattern masks were exposed with an exposure dose of 200 mJ/cm 2 (i-ray) and a gap of 100 μm. Thereafter, an automatic developing device ("AD-2000 (trade name)" manufactured by Takizawa Sangyo Co., Ltd.) was used to perform spray development using a 0.045% by weight potassium hydroxide aqueous solution for 100 seconds, followed by rinsing with water for 30 seconds.
使用調整為倍率100倍的顯微鏡,對顯影後的圖案進行放大觀察,將於未曝光部中未確認到殘渣的圖案中最窄線寬設為解析度。其中,將於100μm寬的圖案附近的未曝光部亦有殘渣的情況設為「>100μm」。 Using a microscope adjusted to a magnification of 100 times, the developed pattern was magnified and observed, and the resolution was defined as the narrowest line width in the pattern where no residue was found in the unexposed portion. Among them, the case where there are residues even in the unexposed parts near the pattern with a width of 100 μm is set as ">100 μm".
<反射率> <Reflectivity>
針對各實施例及比較例中使用的隔離壁形成樹脂組成物,於曝光時不介隔光罩對整體進行曝光,除此以外,於與各實施例及比較例相同的條件下進行加工,於玻璃基板上製作整體膜。將所得的整體膜作為藉由各實施例及比較例獲得的帶隔離壁的基板的隔離壁的模型,關於具有整體膜的玻璃基板,使用分光測色計(商品名CM-2600d、柯尼卡美能達(Konica Minolta)(股)製造),自整體 膜側利用SCI模式測定波長550nm下的反射率。其中,於整體膜中產生裂紋的情況下,因龜裂等原因而無法獲得正確的值,因此未實施反射率的測定。 The partition wall-forming resin composition used in each of the Examples and Comparative Examples was processed under the same conditions as in each of the Examples and Comparative Examples, except that the whole was exposed without a light shield during exposure. A monolithic film is produced on a glass substrate. The obtained monolithic film was used as a model of the partition wall of the substrate with partition walls obtained in each of the Examples and Comparative Examples. Regarding the glass substrate with the monolithic film, a spectrophotometer (trade name: CM-2600d, Konica) was used. Manufactured by Konica Minolta (Co., Ltd.), since the whole On the film side, the reflectance at a wavelength of 550 nm was measured using SCI mode. However, when cracks occur in the entire film, accurate values cannot be obtained due to cracks or the like, and therefore the reflectance is not measured.
<耐裂紋性> <Crack resistance>
將各實施例及比較例中使用的隔離壁形成樹脂組成物以加熱後的膜厚分別成為5μm、10μm、15μm及20μm的方式進行旋塗。關於其後的步驟,除了於曝光時不介隔光罩而對整體進行曝光以外,於與各實施例及比較例相同的條件下進行加工,於玻璃基板上製作整體膜。將所得的整體膜作為藉由各實施例及比較例獲得的帶隔離壁的基板的隔離壁的模型,目視觀察具有整體膜的玻璃基板,評價整體膜有無裂紋的產生。於確認到即便一個裂紋的情況下,亦判斷為無所述膜厚的耐裂紋性。例如,於膜厚15μm中不存在裂紋、膜厚20μm中有裂紋的情況下,將耐裂紋膜厚判定為「≧15μm」。另外,將即便於20μm中亦無裂紋時的耐裂紋膜厚判定為「≧20μm」、即便於5μm中亦有裂紋時的耐裂紋膜厚判定為「<5μm」,並設為耐裂紋性。 The partition wall-forming resin composition used in each Example and Comparative Example was spin-coated so that the film thickness after heating became 5 μm, 10 μm, 15 μm, and 20 μm, respectively. Regarding the subsequent steps, except that the entire film was exposed without a light shield during exposure, processing was performed under the same conditions as in each of the examples and comparative examples to produce an integral film on the glass substrate. The obtained integral film was used as a model of the partition wall of the substrate with partition walls obtained in each of the Examples and Comparative Examples, and the glass substrate with the integral film was visually observed to evaluate the occurrence of cracks in the integral film. When even one crack is confirmed, it is judged that the film thickness does not have crack resistance. For example, when there are no cracks in the film thickness of 15 μm and cracks in the film thickness of 20 μm, the crack-resistant film thickness is determined to be “≧15 μm”. In addition, the crack-resistant film thickness when there are no cracks even at 20 μm is judged as "≧20 μm", and the crack-resistant film thickness when there are cracks even at 5 μm is judged as "<5 μm", and these are regarded as crack resistance.
<OD值> <OD value>
作為藉由各實施例及比較例而獲得的帶隔離壁的基板的隔離壁的模型,與反射率的評價同樣地於玻璃基板上製作整體膜。關於所獲得的具有整體膜的玻璃基板,使用光學濃度計(361T(視覺(visual));愛色麗(X-rite)公司製造)測定入射光及透過光的強度,根據上文所述的式(1)算出OD值。再者,關於OD值,分 別測定加熱步驟前的整體膜與加熱步驟後的OD值,包含其差在內,記載於表6~表7中。 As a model of the partition wall of the partition wall-equipped substrate obtained in each of the Examples and Comparative Examples, a monolithic film was produced on a glass substrate in the same manner as in the evaluation of reflectance. Regarding the obtained glass substrate with the integral film, the intensity of incident light and transmitted light was measured using an optical densitometer (361T (Visual); manufactured by X-rite Corporation). According to the above Equation (1) calculates the OD value. Furthermore, regarding the OD value, points The OD values of the entire film before the heating step and after the heating step were separately measured, including the difference, and are listed in Tables 6 to 7.
另外,關於實施例37,作為遮光隔離壁(A-2)的模型,同樣地於玻璃基板上製作整體膜。關於所獲得的具有整體膜的玻璃基板,使用光學濃度計(361T(視覺(visual));愛色麗(X-rite)公司製造)測定入射光及透過光的強度,根據上文所述的式(1)算出。 In addition, regarding Example 37, as a model of the light-shielding partition wall (A-2), a monolithic film was produced on a glass substrate in the same manner. Regarding the obtained glass substrate with the integral film, the intensity of incident light and transmitted light was measured using an optical densitometer (361T (Visual); manufactured by X-rite Corporation). According to the above Calculated by formula (1).
<錐角> <Taper angle>
於各實施例及比較例中,使用光學顯微鏡(FE-SEM(S-4800);日立製作所(股)製造),以加速電壓3.0kV觀測畫素形成前的帶隔離壁的基板的任意的剖面,測定錐角。 In each of the Examples and Comparative Examples, an optical microscope (FE-SEM (S-4800); manufactured by Hitachi, Ltd.) was used to observe any cross-section of the substrate with the partition wall before pixel formation at an acceleration voltage of 3.0 kV. , determine the cone angle.
<表面接觸角> <Surface contact angle>
作為藉由各實施例及比較例而獲得的帶隔離壁的基板中的隔離壁的模型,與反射率的評價同樣地於玻璃基板上製作整體膜。關於所獲得的整體膜的表面,使用協和界面科學(股)製造的DM-700、微量注射器:協和界面科學(股)製造的接觸角計用鐵氟龍(Teflon)(註冊商標)塗佈針22G,於25℃下、大氣中,依據JIS R3257(製定年月日=1999/04/20)規定的基板玻璃表面的潤濕性試驗方法,測定表面接觸角。其中,使用丙二醇單甲醚乙酸酯代替水,測定整體膜的表面與丙二醇單甲醚乙酸酯的接觸角。 As a model of the partition wall in the substrate with partition walls obtained in each of the Examples and Comparative Examples, a monolithic film was produced on a glass substrate in the same manner as in the evaluation of reflectance. Regarding the surface of the obtained monolithic film, DM-700 manufactured by Kyowa Interface Science Co., Ltd. and a microsyringe were used: Teflon (registered trademark) coating needle for contact angle meter manufactured by Kyowa Interface Science Co., Ltd. 22G, at 25℃ in the atmosphere, measure the surface contact angle according to the wettability test method of the substrate glass surface specified in JIS R3257 (date of establishment = 1999/04/20). Among them, propylene glycol monomethyl ether acetate was used instead of water, and the contact angle between the surface of the entire film and propylene glycol monomethyl ether acetate was measured.
<噴墨塗佈性> <Inkjet coating properties>
於藉由各實施例及比較例所獲得的、形成畫素之前的帶隔離 壁的基板中,針對由格子狀的隔離壁包圍的畫素部分,將PGMEA作為油墨,使用噴墨塗佈裝置(英捷特蘭博(InkjetLabo)、群集科技(Cluster Technology)(股)製造),進行噴墨塗佈。每一個格子狀圖案塗佈160pL的PGMEA,觀察有無潰決(油墨越過隔離壁而混入鄰接的畫素部分中的現象),藉由下述基準評價噴墨塗佈性。潰決越少,表示防液性能越高,噴墨塗佈性越優異。 Band isolation before forming pixels obtained by each of the Examples and Comparative Examples In the wall substrate, an inkjet coating device (manufactured by InkjetLabo and Cluster Technology Co., Ltd.) was used using PGMEA as the ink for the pixel portion surrounded by the lattice-shaped partition walls. , for inkjet coating. 160 pL of PGMEA was applied to each grid pattern, and the presence or absence of collapse (a phenomenon in which ink crosses the partition walls and mixes into adjacent pixel portions) was observed, and the inkjet coating properties were evaluated according to the following criteria. The fewer breakouts, the higher the liquid-repellent performance and the better the inkjet coating properties.
A:油墨未自畫素中溢出。 A: Ink does not overflow from the pixel.
B:於一部分中油墨自畫素中溢出至隔離壁的上表面。 B: The ink overflows from the pixel to the upper surface of the partition wall in part.
C:於整個面上油墨自畫素中溢出至隔離壁的上表面。 C: The ink overflows from the pixels to the upper surface of the partition wall on the entire surface.
<厚度> <Thickness>
關於藉由各實施例及比較例所獲得的帶隔離壁的基板,使用薩氟慕(SURFCOM)觸針式膜厚測定裝置,測定畫素(B)形成前後的結構體的高度,算出其差分,藉此測定畫素(B)的厚度。對實施例29~實施例31進而同樣地測定低折射率層(C)的膜厚,對實施例32~實施例36進而同樣地測定彩色濾光片的膜厚,對實施例37進而同樣地測定遮光隔離壁的厚度(高度)。 Regarding the substrates with partitions obtained in each of the Examples and Comparative Examples, a SURFCOM stylus type film thickness measuring device was used to measure the height of the structure before and after the pixel (B) was formed, and the difference was calculated. , thereby measuring the thickness of pixel (B). For Examples 29 to 31, the film thickness of the low refractive index layer (C) was further measured in the same manner. For Examples 32 to 36, the film thickness of the color filter was further measured in the same manner. For Example 37, the film thickness was further measured in the same manner. Measure the thickness (height) of the light-shielding partition wall.
另外,關於實施例30~實施例31及實施例33~實施例34,使用截面拋光儀等研磨裝置,使與基底基板垂直的截面露出,使用掃描式電子顯微鏡或穿透式電子顯微鏡對截面進行放大觀察,藉此分別測定無機保護層I~無機保護層IV的厚度。 In addition, regarding Examples 30 to 31 and Examples 33 to 34, a polishing device such as a cross-section polisher was used to expose a cross section perpendicular to the base substrate, and the cross section was analyzed using a scanning electron microscope or a transmission electron microscope. Magnify and observe to measure the thickness of the inorganic protective layer I to the inorganic protective layer IV respectively.
<亮度> <Brightness>
將搭載有市售的LED背光(峰值波長465nm)的面狀發光 裝置作為光源,以畫素部成為光源側的方式,設置藉由各實施例及比較例所獲得的帶隔離壁的基板。於所述面狀發光裝置中流通30mA的電流而點亮LED元件,使用分光放射亮度計(CS-1000、柯尼卡美能達(Konica Minolta)公司製造),測定基於CIE1931標準的亮度(單位:cd/cm2),並設為初始亮度。其中,亮度的評價是藉由將實施例45的初始亮度設為標準的100的相對值進行。 A planar light-emitting device equipped with a commercially available LED backlight (peak wavelength 465 nm) was used as a light source, and the substrate with partition walls obtained in each of the Examples and Comparative Examples was installed so that the pixel portion became the light source side. A current of 30 mA was passed through the planar light-emitting device to light up the LED element, and a spectroradiometer (CS-1000, manufactured by Konica Minolta) was used to measure the luminance (unit: cd/cm 2 ) and set as the initial brightness. The evaluation of brightness was performed by setting the initial brightness of Example 45 as a relative value of a standard 100.
另外,於室溫(23℃)下,於將LED元件點亮48小時後,同樣地測定亮度,評價亮度的經時變化。其中,亮度的評價是藉由將實施例45的初始亮度設為作為標準的100的相對值進行。 In addition, 48 hours after the LED element was lit at room temperature (23° C.), the brightness was measured in the same manner to evaluate changes in brightness over time. The evaluation of brightness was performed by setting the initial brightness of Example 45 to a relative value of 100 as a standard.
<顏色特性> <Color characteristics>
於市售的白色反射板上,以將畫素配置於白色反射板側的方式設置藉由各實施例及比較例所獲得的帶隔離壁的基板。使用分光測色計(CM-2600d、柯尼卡美能達(Konica Minolta)公司製造、測定徑Φ8mm),自帶隔離壁的基板的基底基板側照射光,測定包含正反射光的光譜。 The substrate with partition walls obtained in each of the Examples and Comparative Examples was placed on a commercially available white reflective plate such that the pixels were arranged on the side of the white reflective plate. Using a spectrophotometer (CM-2600d, manufactured by Konica Minolta, measuring diameter Φ8 mm), light was irradiated from the base substrate side of the substrate with the partition wall, and a spectrum including regular reflected light was measured.
幾乎可再現自然界的顏色的顏色標準BT.2020所定義的色域規定為將色度圖中所示的光譜軌跡上的紅、綠及藍作為三原色,紅、綠及藍的波長分別相當於630nm、532nm及467nm。根據所獲得的反射光譜的470nm、530nm及630nm的三種波長的反射率(R),藉由以下基準評價畫素的發光色。 The color gamut defined by the color standard BT.2020, which can almost reproduce the colors of nature, stipulates that red, green and blue on the spectral locus shown in the chromaticity diagram are the three primary colors. The wavelengths of red, green and blue are respectively equivalent to 630nm. , 532nm and 467nm. Based on the reflectance (R) of the three wavelengths of 470 nm, 530 nm, and 630 nm of the obtained reflection spectrum, the luminescent color of the pixel was evaluated according to the following criteria.
A:R530/(R630+R530+R470)≧0.55 A:R 530 /(R 630 +R 530 +R 470 )≧0.55
B:R530/(R630+R530+R470)<0.55。 B: R 530 /(R 630 +R 530 +R 470 )<0.55.
<顯示特性> <Display characteristics>
基於以下基準評價將藉由各實施例及比較例所獲得的帶隔離壁的基板與有機EL元件組合而製作的顯示裝置的顯示特性。 The display characteristics of the display device produced by combining the substrate with partitions obtained in each Example and Comparative Example and the organic EL element were evaluated based on the following standards.
A:綠色顯示非常鮮豔,為鮮明、對比度優異的顯示裝置。 A: The green display is very bright, and it is a display device with sharp and excellent contrast.
B:雖然觀察到色彩稍微不自然,但為無問題的顯示裝置。 B: Although the color is slightly unnatural, it is a display device with no problems.
<混色> <Color Mix>
於藉由各實施例及比較例所獲得的形成畫素前的帶隔離壁的基板中,於由格子狀的隔離壁包圍的畫素部分的一部分中使用噴墨法塗佈顏色變換發光材料組成物(CL-2),於100℃下乾燥30分鐘,形成厚度5.0μm的畫素。其後,於由格子狀的隔離壁包圍的畫素部分中,於塗佈顏色變換發光材料組成物(CL-2)的區域的鄰接區域中使用噴墨法塗佈顏色變換發光材料組成物(CL-3),於100℃下乾燥30分鐘,形成厚度5.0μm的畫素。 In the substrate with partition walls before forming the pixels obtained in each of the Examples and Comparative Examples, a color-changing luminescent material is applied to a part of the pixel portion surrounded by the grid-shaped partition walls using an inkjet method. Material (CL-2) was dried at 100°C for 30 minutes to form a pixel with a thickness of 5.0 μm. Thereafter, in the pixel portion surrounded by the grid-like partition walls, the color-converting luminescent material composition (CL-2) was applied using an inkjet method in an area adjacent to the area where the color-converting luminescent material composition (CL-2) was applied. CL-3), dried at 100°C for 30 minutes to form a pixel with a thickness of 5.0 μm.
另一方面,製作具有與由格子狀的隔離壁包圍的畫素部分相同寬度的藍色有機EL單元,使所述帶隔離壁的基板與藍色有機EL單元對向,藉由密封劑進行貼合,獲得圖10所示的構成的顯示裝置。 On the other hand, a blue organic EL unit having the same width as the pixel portion surrounded by lattice-shaped partition walls is produced, and the substrate with the partition walls faces the blue organic EL unit, and is attached with a sealant. Combined, a display device having the structure shown in Fig. 10 is obtained.
於圖10中的藍色有機EL單元11中,於僅使在由顏色變換發光材料組成物(CL-2)形成的畫素3(CL-2)的正下方貼合的藍色有機EL單元點亮的狀態下,針對由顏色變換發光材料組成物(CL-3)形成的畫素3(CL-3)部分,使用顯微分光光度計LVmicro-V(蘭達維肖恩(Lambda Vision)(股)製造),測定波長630nm
下的吸光強度A(630nm)。吸光強度A(630nm)的值越小,表示越難引起混色。藉由下述判定基準判定混色。
In the blue
A:A(630nm)<0.01 A:A(630nm)<0.01
B:0.01≦A(630nm)≦0.5 B: 0.01≦A(630nm)≦0.5
C:0.5<A(630nm)。 C: 0.5<A(630nm).
將各實施例及比較例評價結果示於表6~表7中。 The evaluation results of each Example and Comparative Example are shown in Tables 6 to 7.
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Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11294284B2 (en) * | 2018-07-17 | 2022-04-05 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin composition and pattern forming process |
| KR102285669B1 (en) * | 2018-08-27 | 2021-08-04 | 동우 화인켐 주식회사 | A color filter, a method of making thereof, and an image display device comprising thereof |
| CN110034166B (en) * | 2019-03-26 | 2022-09-09 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display device and method of manufacturing the same |
| JP2021110896A (en) * | 2020-01-15 | 2021-08-02 | 太陽インキ製造株式会社 | Display partition |
| CN114981690A (en) * | 2020-02-13 | 2022-08-30 | 东丽株式会社 | Method for manufacturing wavelength conversion substrate, and display |
| KR102809481B1 (en) * | 2020-02-28 | 2025-05-19 | 후지필름 가부시키가이샤 | Method for manufacturing a conductive pattern, touch sensor, electromagnetic shield, antenna, wiring board, conductive heating element, and structure |
| CN115151865A (en) * | 2020-03-04 | 2022-10-04 | Agc株式会社 | Positive photosensitive resin composition |
| KR102696631B1 (en) * | 2020-03-16 | 2024-08-21 | 동우 화인켐 주식회사 | A photosensitive resin composition for forming partition wall, a partition wall structure prepared using the composition, and a display device comprising the partition wall structure |
| CN111205646B (en) * | 2020-03-20 | 2022-09-09 | 株洲时代华鑫新材料技术有限公司 | A kind of black matte polyimide film and preparation method thereof |
| EP4130009B1 (en) * | 2020-03-23 | 2025-08-27 | Toray Industries, Inc. | Color conversion composition, color conversion film, light source unit, display, and lighting including same, and compound |
| CN111403335A (en) * | 2020-03-26 | 2020-07-10 | 武汉华星光电半导体显示技术有限公司 | Display device and method of making the same |
| KR102819502B1 (en) | 2020-03-30 | 2025-06-12 | 도레이 카부시키가이샤 | Resin composition, light-shielding film, and substrate having a partition formed thereon |
| JP7732206B2 (en) * | 2020-03-30 | 2025-09-02 | 東レ株式会社 | Negative photosensitive coloring composition, cured film, method for producing cured film, partition-equipped substrate, and image display device |
| JP2021161401A (en) * | 2020-03-30 | 2021-10-11 | 東レ株式会社 | Resin composition, light blocking film, method for producing light blocking film, and substrate with partition |
| JP2023520928A (en) * | 2020-04-08 | 2023-05-22 | イー インク カリフォルニア, エルエルシー | quantum dot film |
| JP7532957B2 (en) * | 2020-07-01 | 2024-08-14 | Toppanホールディングス株式会社 | Display device |
| TW202244161A (en) * | 2021-02-18 | 2022-11-16 | 日商三菱化學股份有限公司 | Photosensitive colored composition, cured object, banks, organic electroluminescent element, and image display device |
| CN116802221A (en) * | 2021-02-24 | 2023-09-22 | 东丽株式会社 | Photosensitive resin composition, cured product, laminated body, display device, and method for manufacturing display device |
| JP2022150305A (en) * | 2021-03-26 | 2022-10-07 | 東レ株式会社 | Resin composition, ultraviolet absorption layer, and substrate with ultraviolet absorption layer |
| TWI779832B (en) * | 2021-09-14 | 2022-10-01 | 立勇發科技股份有限公司 | Backlight module and display device used in quantum dot display field |
| CN117957494A (en) | 2021-09-24 | 2024-04-30 | 东丽株式会社 | Resin composition, light-shielding film, and substrate with partition walls |
| WO2023054046A1 (en) * | 2021-09-29 | 2023-04-06 | 東レ株式会社 | Method for manufacturing cured-film-coated substrate, cured-film-coated substrate, and element comprising cured-film-coated substrate |
| CN114296317B (en) * | 2021-11-05 | 2025-06-27 | 深圳市华星光电半导体显示技术有限公司 | Photoresist, display panel and method for manufacturing display panel |
| CN114038984B (en) * | 2021-12-02 | 2023-03-31 | 业成科技(成都)有限公司 | Micro light emitting diode display and forming method thereof |
| JPWO2023157713A1 (en) | 2022-02-16 | 2023-08-24 | ||
| JP7513054B2 (en) * | 2022-05-17 | 2024-07-09 | Toppanホールディングス株式会社 | Black matrix substrate and display device |
| EP4577874A1 (en) | 2022-08-26 | 2025-07-02 | Merck Patent GmbH | Composition |
| WO2024042107A1 (en) | 2022-08-26 | 2024-02-29 | Merck Patent Gmbh | Composition |
| CN115513359B (en) * | 2022-09-15 | 2025-08-19 | 惠柏新材料科技(上海)股份有限公司 | Quantum dot inorganic packaging color conversion sheet and manufacturing method thereof |
| CN115666161A (en) * | 2022-10-31 | 2023-01-31 | 维信诺科技股份有限公司 | Display panel and display device |
| KR20240063546A (en) | 2022-11-03 | 2024-05-10 | 동우 화인켐 주식회사 | A black photosensitive resin composition, a partition wall structure prepared using the composition, and a display device comprising the partition wall structure |
| JP2024129723A (en) * | 2023-03-13 | 2024-09-27 | 住友化学株式会社 | Colored curable resin composition, color filter, and solid-state image pickup device |
| TW202509386A (en) * | 2023-03-20 | 2025-03-01 | 日商太陽控股股份有限公司 | Structure for light-emitting panel and method for manufacturing the same |
| JP7670241B1 (en) * | 2023-07-27 | 2025-04-30 | 東レ株式会社 | Photosensitive resin composition and cured film, and color filter, solid-state imaging device, and fingerprint authentication device using the cured film |
| WO2026004678A1 (en) * | 2024-06-28 | 2026-01-02 | 日産化学株式会社 | Method for forming pattern on laminate and composition used therefor |
| WO2026019177A1 (en) * | 2024-07-15 | 2026-01-22 | 삼성에스디아이 주식회사 | Curable resin composition, thin layer manufactured using same, and color conversion panel and display device including thin layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101868761A (en) * | 2007-11-20 | 2010-10-20 | 伊斯曼柯达公司 | Methods using shading masks combined with selected area deposition |
| TW201106027A (en) * | 2009-05-20 | 2011-02-16 | Asahi Glass Co Ltd | Method for manufacturing optical elements |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11174671A (en) * | 1997-12-09 | 1999-07-02 | Mitsubishi Chemical Corp | Light-shielding photosensitive composition and color filter |
| JP2000131683A (en) | 1998-10-29 | 2000-05-12 | Hitachi Ltd | Color display |
| JP2001051266A (en) * | 1999-06-01 | 2001-02-23 | Toray Ind Inc | Color filter and liquid crystal display device |
| JP4352509B2 (en) | 1999-06-07 | 2009-10-28 | 東レ株式会社 | Photosensitive paste and display member manufacturing method |
| DE10015502A1 (en) * | 2000-03-14 | 2001-09-27 | Bosch Gmbh Robert | Photostructurizable paste, for producing structurized resistance film or wiring trace on green ceramic substrate, contains platinum (compound) powder and optionally ceramic (precursor) as filler in light-sensitive organic binder |
| JP4639530B2 (en) | 2000-06-01 | 2011-02-23 | パナソニック株式会社 | Photosensitive paste and plasma display |
| JP2002250803A (en) * | 2001-02-23 | 2002-09-06 | Sumitomo Chem Co Ltd | Light scattering resin and liquid crystal display device using the same |
| JP2003177229A (en) * | 2001-12-11 | 2003-06-27 | Fuji Photo Film Co Ltd | Method for forming circuit board attached with color filter and circuit board attached with color filter |
| JP2004059683A (en) * | 2002-07-26 | 2004-02-26 | Fuji Photo Film Co Ltd | Colored composition, inkjet recording ink, inkjet recording method, thermal recording material, color toner, color filter |
| JP4401196B2 (en) * | 2003-03-10 | 2010-01-20 | 富士フイルム株式会社 | Dye-containing curable composition, color filter and method for producing the same |
| JP4694157B2 (en) * | 2004-06-28 | 2011-06-08 | 富士フイルム株式会社 | Substrate with light-shielding image, method for producing light-shielding image, transfer material, color filter, and display device |
| JP4197177B2 (en) | 2005-03-18 | 2008-12-17 | 東京応化工業株式会社 | Photo-curable resin composition for forming black matrix, photosensitive film using the same, method for forming black matrix, black matrix and plasma display panel having the black matrix |
| JP2007206345A (en) * | 2006-02-01 | 2007-08-16 | Fujifilm Corp | COLOR FILTER, COLOR FILTER MANUFACTURING METHOD, AND DISPLAY DEVICE |
| TWI396593B (en) * | 2006-03-31 | 2013-05-21 | Toray Industries | Coating method, coating device and manufacturing method and manufacturing device for components of a display |
| JP4963951B2 (en) * | 2006-05-24 | 2012-06-27 | 富士フイルム株式会社 | Green photosensitive resin composition, photosensitive resin transfer material, color filter, and display device |
| KR20070115803A (en) * | 2006-06-02 | 2007-12-06 | 후지필름 가부시키가이샤 | Organic pigment nanoparticle dispersion and its manufacturing method, inkjet ink containing the same, coloring photosensitive resin composition and photosensitive resin transfer material, and color filter, liquid crystal display device and CD device using the same |
| JP5046731B2 (en) * | 2007-04-26 | 2012-10-10 | 富士フイルム株式会社 | Color filter, manufacturing method thereof, and display device |
| CN101349865B (en) * | 2007-07-17 | 2012-10-03 | 富士胶片株式会社 | Photosensitive composition, curable composition, color filter and method for producing color filter |
| JP2009079121A (en) * | 2007-09-26 | 2009-04-16 | Fujifilm Corp | Pigment dispersion composition, photocurable composition, color filter, and method for producing color filter |
| CN101440236A (en) * | 2007-11-22 | 2009-05-27 | 富士胶片株式会社 | Print ink for ink jet, color filter, manufacturing method thereof, liquid display device using the color filter and image display element |
| JP2009204816A (en) * | 2008-02-27 | 2009-09-10 | Fujifilm Corp | Colored curable composition, color filter and liquid crystal display |
| JP2009244383A (en) | 2008-03-28 | 2009-10-22 | Fujifilm Corp | Liquid crystal display device |
| JP2010092785A (en) * | 2008-10-10 | 2010-04-22 | Toray Ind Inc | Photosensitive paste, manufacturing method of plasma display member using the same, and plasma display |
| JP2010134550A (en) * | 2008-12-02 | 2010-06-17 | Kenwood Corp | Base station, mobile station, wireless communication system, method and program |
| CN101852989A (en) * | 2009-03-31 | 2010-10-06 | 富士胶片株式会社 | Photosensitive coloring composition, color filter and autofrettage thereof and liquid crystal indicator |
| JP5498051B2 (en) * | 2009-04-24 | 2014-05-21 | 新日鉄住金化学株式会社 | Bulkhead and color filter |
| JP5593662B2 (en) * | 2009-09-29 | 2014-09-24 | 東レ株式会社 | Photosensitive paste, insulating pattern forming method, and flat panel display manufacturing method |
| KR101486641B1 (en) * | 2010-06-07 | 2015-01-26 | 히타치가세이가부시끼가이샤 | Photosensitive resin composition, photosensitive element comprising the composition, method for formation of septum for image display device, process for production of image display device, and image display device |
| JP5796432B2 (en) * | 2010-09-22 | 2015-10-21 | 東レ株式会社 | Molded body and electronic equipment |
| JP5316575B2 (en) * | 2011-03-01 | 2013-10-16 | 住友金属鉱山株式会社 | Shielding film, manufacturing method thereof, and use |
| JP5472241B2 (en) * | 2011-09-16 | 2014-04-16 | 信越化学工業株式会社 | Method for producing cured thin film using photocurable silicone resin composition |
| JP5938895B2 (en) * | 2011-12-26 | 2016-06-22 | 住友化学株式会社 | Colored curable resin composition |
| WO2013129425A1 (en) * | 2012-02-27 | 2013-09-06 | 東レ株式会社 | Transfer donor substrate and device manufacturing method |
| JP2013196919A (en) * | 2012-03-21 | 2013-09-30 | Sony Corp | Organic el display device, organic el display device manufacturing method, and color filter substrate |
| CN102707484B (en) * | 2012-04-24 | 2014-07-09 | 京东方科技集团股份有限公司 | Semi-transmission and semi-reflection color-film substrate and manufacturing method thereof as well as liquid crystal display device |
| JP2014052606A (en) * | 2012-09-10 | 2014-03-20 | Sharp Corp | Phosphor substrate, light-emitting device, display device and luminaire |
| WO2014091811A1 (en) * | 2012-12-11 | 2014-06-19 | 東レ株式会社 | Heat-curable coloring composition, cured film, touch panel provided with said cured film, and method for producing touch panel using said heat-curable coloring composition |
| WO2014136738A1 (en) * | 2013-03-07 | 2014-09-12 | 東レ株式会社 | Black matrix substrate |
| KR102020812B1 (en) * | 2013-06-17 | 2019-09-11 | 도레이 카부시키가이샤 | Method for manufacturing laminated resin black-matrix substrate |
| JP2015001654A (en) | 2013-06-17 | 2015-01-05 | 東レ株式会社 | Method for manufacturing laminate resin black matrix substrate |
| CN105378615B (en) * | 2013-07-25 | 2019-05-31 | 东丽株式会社 | Negative photosensitive white composition for touch panel, touch panel, and manufacturing method of touch panel |
| US9698204B2 (en) * | 2013-12-06 | 2017-07-04 | Sharp Kabushiki Kaisha | Light-emitting substrate, photovoltaic cell, display device, lighting device, electronic device, organic light-emitting diode, and method of manufacturing light-emitting substrate |
| CN105807351B (en) * | 2014-12-31 | 2019-03-19 | 上海仪电显示材料有限公司 | Production method, colour filter and the liquid crystal display device of colour filter |
| JP6544634B2 (en) | 2015-07-27 | 2019-07-17 | 大日本印刷株式会社 | Color filter and display device |
| CN108027561B (en) * | 2015-09-30 | 2021-10-08 | 东丽株式会社 | Negative photosensitive resin composition, cured film, element and display device provided with cured film, and method for producing the same |
| JP6713746B2 (en) * | 2015-10-08 | 2020-06-24 | 日鉄ケミカル&マテリアル株式会社 | Photosensitive resin composition for light-shielding film having spacer function, light-shielding film, liquid crystal display device, method for producing photosensitive resin composition for light-shielding film having spacer function, method for producing light-shielding film, and production of liquid crystal display device Method |
| JP6700710B2 (en) * | 2015-10-16 | 2020-05-27 | 日鉄ケミカル&マテリアル株式会社 | Photosensitive resin composition for black column spacer, black column spacer, liquid crystal display device, method for producing photosensitive resin composition for black column spacer, method for producing black column spacer, and method for producing liquid crystal display device |
| KR102247840B1 (en) * | 2016-03-18 | 2021-05-03 | 제이에스알 가부시끼가이샤 | Substrate for display device, manufacturing method of the substrate for display device, and display device |
| US10889755B2 (en) * | 2016-11-22 | 2021-01-12 | Samsung Electronics Co., Ltd. | Photosensitive resin composition, complex, laminated structure and display device, and electronic device including the same |
| CN106793732A (en) * | 2017-01-03 | 2017-05-31 | 哈尔滨工业大学 | Geometric center type infrared band dual band pass optical window electromagnetic armouring structure |
| JP7047642B2 (en) | 2017-09-05 | 2022-04-05 | Jsr株式会社 | Photosensitive composition for partition wall formation, partition wall and display element |
-
2019
- 2019-06-26 WO PCT/JP2019/025291 patent/WO2020008969A1/en not_active Ceased
- 2019-06-26 KR KR1020227011384A patent/KR102624898B1/en active Active
- 2019-06-26 CN CN201980041920.9A patent/CN112368611B/en active Active
- 2019-06-26 CN CN202210992042.2A patent/CN115356873B/en active Active
- 2019-06-26 KR KR1020217000149A patent/KR102432033B1/en active Active
- 2019-06-26 JP JP2019536119A patent/JP6908116B2/en active Active
- 2019-07-01 TW TW108123131A patent/TWI783160B/en active
- 2019-07-01 TW TW111114933A patent/TWI816371B/en active
-
2021
- 2021-03-29 JP JP2021054556A patent/JP7044187B2/en active Active
- 2021-12-08 JP JP2021199030A patent/JP7201062B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101868761A (en) * | 2007-11-20 | 2010-10-20 | 伊斯曼柯达公司 | Methods using shading masks combined with selected area deposition |
| TW201106027A (en) * | 2009-05-20 | 2011-02-16 | Asahi Glass Co Ltd | Method for manufacturing optical elements |
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| CN115356873A (en) | 2022-11-18 |
| CN112368611B (en) | 2022-11-22 |
| KR102624898B1 (en) | 2024-01-16 |
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| JP7044187B2 (en) | 2022-03-30 |
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| KR20220049046A (en) | 2022-04-20 |
| CN115356873B (en) | 2025-04-25 |
| CN112368611A (en) | 2021-02-12 |
| JP2022033154A (en) | 2022-02-28 |
| JP6908116B2 (en) | 2021-07-21 |
| JPWO2020008969A1 (en) | 2021-05-13 |
| TW202229443A (en) | 2022-08-01 |
| TW202006045A (en) | 2020-02-01 |
| KR20210029764A (en) | 2021-03-16 |
| KR102432033B1 (en) | 2022-08-12 |
| JP7201062B2 (en) | 2023-01-10 |
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