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TWI801019B - 薄膜電晶體的製造方法 - Google Patents

薄膜電晶體的製造方法 Download PDF

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Publication number
TWI801019B
TWI801019B TW110145562A TW110145562A TWI801019B TW I801019 B TWI801019 B TW I801019B TW 110145562 A TW110145562 A TW 110145562A TW 110145562 A TW110145562 A TW 110145562A TW I801019 B TWI801019 B TW I801019B
Authority
TW
Taiwan
Prior art keywords
manufacturing
thin film
film transistor
transistor
thin
Prior art date
Application number
TW110145562A
Other languages
English (en)
Other versions
TW202225441A (zh
Inventor
酒井敏彦
Original Assignee
日商日新電機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日新電機股份有限公司 filed Critical 日商日新電機股份有限公司
Publication of TW202225441A publication Critical patent/TW202225441A/zh
Application granted granted Critical
Publication of TWI801019B publication Critical patent/TWI801019B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10P14/60—
    • H10P14/6336—
    • H10P14/6514—
    • H10P14/6927—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW110145562A 2020-12-18 2021-12-07 薄膜電晶體的製造方法 TWI801019B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020210352A JP7696076B2 (ja) 2020-12-18 2020-12-18 薄膜トランジスタの製造方法
JP2020-210352 2020-12-18

Publications (2)

Publication Number Publication Date
TW202225441A TW202225441A (zh) 2022-07-01
TWI801019B true TWI801019B (zh) 2023-05-01

Family

ID=82058783

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110145562A TWI801019B (zh) 2020-12-18 2021-12-07 薄膜電晶體的製造方法

Country Status (5)

Country Link
JP (1) JP7696076B2 (zh)
KR (1) KR102835739B1 (zh)
CN (1) CN116324019B (zh)
TW (1) TWI801019B (zh)
WO (1) WO2022130912A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056542A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2013051644A1 (ja) * 2011-10-07 2013-04-11 住友電気工業株式会社 絶縁膜およびその製造方法
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW201812419A (zh) * 2016-07-25 2018-04-01 半導體能源研究所股份有限公司 電晶體的製造方法及顯示裝置
TWI645471B (zh) * 2012-04-06 2018-12-21 半導體能源研究所股份有限公司 絕緣膜，用於製造半導體的方法，及半導體裝置
TWI666707B (zh) * 2014-10-01 2019-07-21 日商東京威力科創股份有限公司 電子元件、其製造方法及其製造裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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JP2008028252A (ja) * 2006-07-24 2008-02-07 Toshiba Matsushita Display Technology Co Ltd 半導体層の処理方法、半導体層の処理装置、薄膜トランジスタの製造方法及び薄膜トランジスタの製造装置
JP5124189B2 (ja) 2007-07-11 2013-01-23 シャープ株式会社 光電変換素子の製造方法
JP2009260044A (ja) * 2008-04-17 2009-11-05 Hitachi Displays Ltd 表示装置
WO2011118510A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120122518A (ko) * 2011-04-29 2012-11-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5984354B2 (ja) * 2011-10-07 2016-09-06 住友電気工業株式会社 半導体素子
KR102147849B1 (ko) * 2013-08-05 2020-08-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP5790893B1 (ja) * 2015-02-13 2015-10-07 日新電機株式会社 膜形成方法および薄膜トランジスタの作製方法
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2016199680A1 (ja) * 2015-06-08 2016-12-15 シャープ株式会社 半導体装置およびその製造方法
JP6924943B2 (ja) 2017-05-12 2021-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
CN111615744B (zh) * 2018-01-19 2024-06-21 株式会社半导体能源研究所 半导体装置的制造方法
US20200166791A1 (en) * 2018-11-23 2020-05-28 Innolux Corporation Panel and method for manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056542A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2013051644A1 (ja) * 2011-10-07 2013-04-11 住友電気工業株式会社 絶縁膜およびその製造方法
TWI645471B (zh) * 2012-04-06 2018-12-21 半導體能源研究所股份有限公司 絕緣膜，用於製造半導體的方法，及半導體裝置
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI666707B (zh) * 2014-10-01 2019-07-21 日商東京威力科創股份有限公司 電子元件、其製造方法及其製造裝置
TW201812419A (zh) * 2016-07-25 2018-04-01 半導體能源研究所股份有限公司 電晶體的製造方法及顯示裝置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
期刊 Jae-Sung Kim, Min-Kyu Joo, Ming Xing Piao, Seung-Eon Ahn, Yong-Hee Choi, Ho-Kyun Jang, and Gyu-Tae Kim Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors Journal of Applied Physics 115(11) AIP 19 March 2014 114503;期刊 Xiaoming Huang ,Dong Zhou andWeizong Xu Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs Appl. Sci. 9(9) MDPI 8 May 2019 1880 *
期刊 Xiaoming Huang ,Dong Zhou andWeizong Xu Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs Appl. Sci. 9(9) MDPI 8 May 2019 1880

Also Published As

Publication number Publication date
KR102835739B1 (ko) 2025-07-18
TW202225441A (zh) 2022-07-01
JP7696076B2 (ja) 2025-06-20
WO2022130912A1 (ja) 2022-06-23
KR20230051692A (ko) 2023-04-18
JP2022097012A (ja) 2022-06-30
CN116324019A (zh) 2023-06-23
CN116324019B (zh) 2025-06-03

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