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TWI800803B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI800803B
TWI800803B TW110108892A TW110108892A TWI800803B TW I800803 B TWI800803 B TW I800803B TW 110108892 A TW110108892 A TW 110108892A TW 110108892 A TW110108892 A TW 110108892A TW I800803 B TWI800803 B TW I800803B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW110108892A
Other languages
English (en)
Other versions
TW202226552A (zh
Inventor
吉川波希
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202226552A publication Critical patent/TW202226552A/zh
Application granted granted Critical
Publication of TWI800803B publication Critical patent/TWI800803B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H10W20/42—
TW110108892A 2020-09-04 2021-03-12 半導體記憶裝置 TWI800803B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-149394 2020-09-04
JP2020149394A JP2022043893A (ja) 2020-09-04 2020-09-04 半導体記憶装置

Publications (2)

Publication Number Publication Date
TW202226552A TW202226552A (zh) 2022-07-01
TWI800803B true TWI800803B (zh) 2023-05-01

Family

ID=80438596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108892A TWI800803B (zh) 2020-09-04 2021-03-12 半導體記憶裝置

Country Status (4)

Country Link
US (2) US12342546B2 (zh)
JP (1) JP2022043893A (zh)
CN (1) CN114141783A (zh)
TW (1) TWI800803B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022050148A (ja) * 2020-09-17 2022-03-30 キオクシア株式会社 半導体記憶装置
JP2023141977A (ja) * 2022-03-24 2023-10-05 キオクシア株式会社 半導体装置、半導体記憶装置、及び半導体装置の製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180158834A1 (en) * 2015-10-30 2018-06-07 Sandisk Technologies Llc 3d nand device with five-folded memory stack structure configuration
US20190081059A1 (en) * 2017-03-07 2019-03-14 Yangtze Memory Technologies Co., Ltd. Trench structures for three-dimensional memory devices
TW202010105A (zh) * 2018-08-14 2020-03-01 大陸商長江存儲科技有限責任公司 記憶裝置
TW202010053A (zh) * 2018-08-14 2020-03-01 大陸商長江存儲科技有限責任公司 擦除記憶裝置的儲存單元的方法
TW202011579A (zh) * 2018-09-10 2020-03-16 大陸商長江存儲科技有限責任公司 使用梳狀繞線結構減少金屬線裝載的記憶元件
US20200161322A1 (en) * 2018-08-21 2020-05-21 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices having through array contacts and methods for forming the same
TW202023038A (zh) * 2018-12-12 2020-06-16 大陸商長江存儲科技有限責任公司 用於立體記憶體件的接觸結構
US20200251487A1 (en) * 2019-01-31 2020-08-06 Yangtze Memory Technologies Co., Ltd. Methods for forming three-dimensional memory device without conductor residual caused by dishing
TW202032762A (zh) * 2019-02-21 2020-09-01 大陸商長江存儲科技有限責任公司 用於立體記憶體的具有多重劃分的階梯結構
TW202032768A (zh) * 2019-02-26 2020-09-01 大陸商長江存儲科技有限責任公司 三維記憶體裝置及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170243817A1 (en) 2016-02-19 2017-08-24 Kabushiki Kaisha Toshiba Semiconductor memory device
USRE50657E1 (en) 2016-09-21 2025-11-04 Kioxia Corporation Semiconductor device for preventing an increase in resistance difference of an electrode layer
KR102679021B1 (ko) 2016-11-29 2024-07-01 삼성전자주식회사 3차원 반도체 메모리 장치
JP2019212689A (ja) 2018-05-31 2019-12-12 東芝メモリ株式会社 半導体メモリ
KR102620598B1 (ko) * 2018-06-05 2024-01-04 삼성전자주식회사 3차원 반도체 소자
JP2020031149A (ja) * 2018-08-23 2020-02-27 キオクシア株式会社 半導体メモリ及び半導体メモリの製造方法
US10943917B2 (en) * 2019-02-05 2021-03-09 Sandisk Technologies Llc Three-dimensional memory device with drain-select-level isolation structures and method of making the same
US10748927B1 (en) 2019-02-05 2020-08-18 Sandisk Technologies Llc Three-dimensional memory device with drain-select-level isolation structures and method of making the same
JP2020136535A (ja) * 2019-02-21 2020-08-31 キオクシア株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US10777575B1 (en) * 2019-03-22 2020-09-15 Sandisk Technologies Llc Three-dimensional memory device with self-aligned vertical conductive strips having a gate-all-around configuration and method of making the same
US10879262B2 (en) * 2019-03-27 2020-12-29 Sandisk Technologies Llc Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same
US11222954B2 (en) * 2020-03-24 2022-01-11 Sandisk Technologies Llc Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same
US11342286B2 (en) * 2020-04-02 2022-05-24 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180158834A1 (en) * 2015-10-30 2018-06-07 Sandisk Technologies Llc 3d nand device with five-folded memory stack structure configuration
US20190081059A1 (en) * 2017-03-07 2019-03-14 Yangtze Memory Technologies Co., Ltd. Trench structures for three-dimensional memory devices
TW202010105A (zh) * 2018-08-14 2020-03-01 大陸商長江存儲科技有限責任公司 記憶裝置
TW202010053A (zh) * 2018-08-14 2020-03-01 大陸商長江存儲科技有限責任公司 擦除記憶裝置的儲存單元的方法
US20200161322A1 (en) * 2018-08-21 2020-05-21 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices having through array contacts and methods for forming the same
TW202011579A (zh) * 2018-09-10 2020-03-16 大陸商長江存儲科技有限責任公司 使用梳狀繞線結構減少金屬線裝載的記憶元件
TW202023038A (zh) * 2018-12-12 2020-06-16 大陸商長江存儲科技有限責任公司 用於立體記憶體件的接觸結構
US20200251487A1 (en) * 2019-01-31 2020-08-06 Yangtze Memory Technologies Co., Ltd. Methods for forming three-dimensional memory device without conductor residual caused by dishing
TW202032762A (zh) * 2019-02-21 2020-09-01 大陸商長江存儲科技有限責任公司 用於立體記憶體的具有多重劃分的階梯結構
TW202032768A (zh) * 2019-02-26 2020-09-01 大陸商長江存儲科技有限責任公司 三維記憶體裝置及其形成方法

Also Published As

Publication number Publication date
US20250280543A1 (en) 2025-09-04
CN114141783A (zh) 2022-03-04
JP2022043893A (ja) 2022-03-16
US12342546B2 (en) 2025-06-24
US20220077173A1 (en) 2022-03-10
TW202226552A (zh) 2022-07-01

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