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TWI801301B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI801301B
TWI801301B TW111129931A TW111129931A TWI801301B TW I801301 B TWI801301 B TW I801301B TW 111129931 A TW111129931 A TW 111129931A TW 111129931 A TW111129931 A TW 111129931A TW I801301 B TWI801301 B TW I801301B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW111129931A
Other languages
English (en)
Other versions
TW202247160A (zh
Inventor
清水麻衣
加藤光司
鎌田義彥
酒向万里生
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202247160A publication Critical patent/TW202247160A/zh
Application granted granted Critical
Publication of TWI801301B publication Critical patent/TWI801301B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
TW111129931A 2017-03-22 2017-07-05 半導體記憶裝置 TWI801301B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017056335A JP2018160295A (ja) 2017-03-22 2017-03-22 半導体記憶装置
JP??2017-056335 2017-03-22

Publications (2)

Publication Number Publication Date
TW202247160A TW202247160A (zh) 2022-12-01
TWI801301B true TWI801301B (zh) 2023-05-01

Family

ID=63581070

Family Applications (8)

Application Number Title Priority Date Filing Date
TW112112933A TWI843511B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW107125312A TWI726226B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW106122480A TWI634563B (zh) 2017-03-22 2017-07-05 Semiconductor memory device
TW111110673A TWI777906B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW111129931A TWI801301B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW110111612A TWI763406B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW113116081A TWI857929B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW113133296A TWI877072B (zh) 2017-03-22 2017-07-05 半導體記憶裝置

Family Applications Before (4)

Application Number Title Priority Date Filing Date
TW112112933A TWI843511B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW107125312A TWI726226B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW106122480A TWI634563B (zh) 2017-03-22 2017-07-05 Semiconductor memory device
TW111110673A TWI777906B (zh) 2017-03-22 2017-07-05 半導體記憶裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW110111612A TWI763406B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW113116081A TWI857929B (zh) 2017-03-22 2017-07-05 半導體記憶裝置
TW113133296A TWI877072B (zh) 2017-03-22 2017-07-05 半導體記憶裝置

Country Status (4)

Country Link
US (7) US10255977B2 (zh)
JP (1) JP2018160295A (zh)
CN (2) CN108630279B (zh)
TW (8) TWI843511B (zh)

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JP2018160295A (ja) * 2017-03-22 2018-10-11 東芝メモリ株式会社 半導体記憶装置
US10497447B2 (en) * 2017-06-29 2019-12-03 SK Hynix Inc. Memory device capable of supporting multiple read operations
KR102671844B1 (ko) * 2018-07-23 2024-06-04 에스케이하이닉스 주식회사 저장장치 및 그 동작 방법
JP2020027674A (ja) 2018-08-10 2020-02-20 キオクシア株式会社 半導体メモリ
US11367488B2 (en) * 2018-12-11 2022-06-21 SK Hynix Inc. Memory system and method for read operation based on grouping of word lines
JP7159036B2 (ja) * 2018-12-25 2022-10-24 キオクシア株式会社 メモリデバイス
JP7332343B2 (ja) 2019-05-28 2023-08-23 キオクシア株式会社 半導体記憶装置
JP2021012752A (ja) * 2019-07-08 2021-02-04 キオクシア株式会社 半導体記憶装置
US11232835B2 (en) * 2019-07-14 2022-01-25 NEO Semiconductor, Inc. Methods and apparatus for reading NAND flash memory
US11562799B2 (en) 2020-12-23 2023-01-24 Micron Technology, Inc. Memory devices for program verify operations
JP2022113999A (ja) 2021-01-26 2022-08-05 キオクシア株式会社 半導体記憶装置
US11289132B1 (en) * 2021-02-05 2022-03-29 Macronix International Co., Ltd. Operation method of memory device
US11568921B2 (en) * 2021-05-12 2023-01-31 Micron Technology, Inc. Read-time overhead and power optimizations with command queues in memory device
JP2023163451A (ja) * 2022-04-28 2023-11-10 キオクシア株式会社 半導体記憶装置
US12431203B2 (en) 2022-12-09 2025-09-30 SanDisk Technologies, Inc. Memory program-verify with adaptive sense time based on row location
US20240194278A1 (en) * 2022-12-09 2024-06-13 Sandisk Technologies Llc Memory program-verify with adaptive sense time based on distance from a word line driver

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US20090122606A1 (en) * 2003-07-11 2009-05-14 Samsung Electronics Co., Ltd. Flash memory device having multi-level cell and reading and programming method thereof
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Also Published As

Publication number Publication date
TWI634563B (zh) 2018-09-01
TWI857929B (zh) 2024-10-01
TWI777906B (zh) 2022-09-11
TW201835908A (zh) 2018-10-01
US20210074361A1 (en) 2021-03-11
TW201837906A (zh) 2018-10-16
JP2018160295A (ja) 2018-10-11
TW202329118A (zh) 2023-07-16
TW202247160A (zh) 2022-12-01
US20190189213A1 (en) 2019-06-20
TWI763406B (zh) 2022-05-01
TW202433478A (zh) 2024-08-16
US20180277218A1 (en) 2018-09-27
US10255977B2 (en) 2019-04-09
US12106808B2 (en) 2024-10-01
US11862248B2 (en) 2024-01-02
US10872668B2 (en) 2020-12-22
US20230178152A1 (en) 2023-06-08
CN114898793A (zh) 2022-08-12
US11600328B2 (en) 2023-03-07
TW202226240A (zh) 2022-07-01
CN108630279A (zh) 2018-10-09
TWI877072B (zh) 2025-03-11
TW202131323A (zh) 2021-08-16
TW202449791A (zh) 2024-12-16
US20240038305A1 (en) 2024-02-01
TWI843511B (zh) 2024-05-21
CN108630279B (zh) 2022-06-21
US20220157380A1 (en) 2022-05-19
US11276466B2 (en) 2022-03-15
TWI726226B (zh) 2021-05-01
US20240420765A1 (en) 2024-12-19

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