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TWI897032B - Variable resistor and method for manufacturing the same - Google Patents

Variable resistor and method for manufacturing the same

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Publication number
TWI897032B
TWI897032B TW112134835A TW112134835A TWI897032B TW I897032 B TWI897032 B TW I897032B TW 112134835 A TW112134835 A TW 112134835A TW 112134835 A TW112134835 A TW 112134835A TW I897032 B TWI897032 B TW I897032B
Authority
TW
Taiwan
Prior art keywords
comb
substrate
pattern
tooth
patterns
Prior art date
Application number
TW112134835A
Other languages
Chinese (zh)
Other versions
TW202431287A (en
Inventor
渡辺政巳
Original Assignee
日商藤倉股份有限公司
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Application filed by 日商藤倉股份有限公司 filed Critical 日商藤倉股份有限公司
Publication of TW202431287A publication Critical patent/TW202431287A/en
Application granted granted Critical
Publication of TWI897032B publication Critical patent/TWI897032B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • H01C10/23Adjustable resistors resistive element dimensions changing in a series of discrete, progressive steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • H01C10/30Adjustable resistors the contact sliding along resistive element
    • H01C10/38Adjustable resistors the contact sliding along resistive element the contact moving along a straight path
    • H01C10/44Adjustable resistors the contact sliding along resistive element the contact moving along a straight path the contact bridging and sliding along resistive element and parallel conducting bar or collector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • H01C10/16Adjustable resistors including plural resistive elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • H01C10/30Adjustable resistors the contact sliding along resistive element
    • H01C10/38Adjustable resistors the contact sliding along resistive element the contact moving along a straight path

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

議題:意圖提供一種能抑制梳齒圖案的劣化的可變電阻器。解決方式:使可變電阻器1A,具備:基材11;複數個梳齒圖案45a~45j,其在支持基材11的同時,互相空出間隔而延伸;以及第一阻劑層20,其為了埋入梳齒圖案45a~45j彼此之間的空間,配置在基材11上;其中,梳齒圖案45a~45j具有與基材11相反側的上面46;上面46從第一阻劑層20露出。Issue: A variable resistor is provided that can suppress degradation of a comb-tooth pattern. Solution: A variable resistor 1A comprises: a substrate 11; a plurality of comb-tooth patterns 45a-45j extending with spaces between them while supporting the substrate 11; and a first resist layer 20 disposed on the substrate 11 to fill the spaces between the comb-tooth patterns 45a-45j. The comb-tooth patterns 45a-45j have an upper surface 46 on the opposite side of the substrate 11; the upper surface 46 is exposed from the first resist layer 20.

Description

可變電阻器以及可變電阻器之製造方法Variable resistor and method for manufacturing the same

本發明是關於可變電阻器以及可變電阻器之製造方法。 The present invention relates to a variable resistor and a method for manufacturing the variable resistor.

專利文獻1所揭露之可變電阻器,具備:配置在下側膜基板的上面的阻抗體、連接阻抗體的同時互相空出間隔而排列的複數個梳齒圖案(comb teeth pattern)、及配置在上側膜基板的下面的連接體,並透過按壓滑件(slider)使上側膜基板及連接體撓曲至下方而使連接體與梳齒圖案接觸(例如,參照專利文獻1(段落〔0090〕、第8圖~第12圖))。接著,透過以滑件按壓上側膜基板的同時滑動,使電性連結連接體的梳齒圖案依序變化,從而改變阻抗體的電阻長(電阻值)(例如,參照專利文獻1(段落〔0092〕、第9圖))。 The variable resistor disclosed in Patent Document 1 comprises: an impedance element disposed on the upper surface of a lower film substrate; a plurality of comb-teeth patterns interconnecting the impedance element and spaced apart from each other; and a connector element disposed on the lower surface of an upper film substrate. By pressing a slider, the upper film substrate and the connector element are bent downward, bringing the connector element into contact with the comb-teeth pattern (see, for example, Patent Document 1 (paragraph [0090], Figures 8-12)). Subsequently, by pressing and sliding the upper film substrate with the slider, the comb-teeth pattern electrically connected to the connector element sequentially changes, thereby varying the resistance length (resistance value) of the impedance element (see, for example, Patent Document 1 (paragraph [0092], Figure 9)).

[先行技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]國際公開第2021/205899公報 [Patent Document 1] International Publication No. 2021/205899

在上述先前技術中,由於梳齒圖案彼此之間存在空間,故若以滑件按壓上側膜基板的同時滑動的話,進入這個空間的連接體會從梳齒圖案的側邊接觸這個梳齒圖案。因此,若反覆進行上述滑動的話,由於連接體會反覆從 橫向接觸梳齒圖案,而有梳齒圖案被削減、因源自橫向的力使梳齒圖案倒下並從下側膜基板剝離等情形。在這樣的情形下,有因反覆滑動而導致梳齒圖案劣化的問題。 In the aforementioned prior art, due to the space between the tooth patterns, if the slider is pressed against the upper film substrate while sliding, the connector that enters this space may contact the tooth pattern from the sides. Consequently, repeated sliding can cause the connector to repeatedly contact the tooth pattern laterally, potentially chipping the tooth pattern or causing it to fall and peel from the lower film substrate due to lateral forces. This situation poses a problem of deteriorating the tooth pattern due to repeated sliding.

本發明所欲解決的問題,係提供能抑制梳齒圖案的劣化的可變電阻器、以及可變電阻器的製造方法。 The problem to be solved by the present invention is to provide a variable resistor that can suppress the degradation of the comb pattern and a method for manufacturing the variable resistor.

〔1〕本發明的態様1,係提供一種可變電阻器,其具備:第一基材;複數個梳齒圖案,支持前述第一基材的同時,互相空出間隔而延伸;以及絕緣體,其為了埋入前述梳齒圖案彼此之間的空間,配置在前述第一基材上;其中,前述梳齒圖案具有與前述第一基材相反側的前端面;前述前端面從前述絕緣體露出。 [1] Aspect 1 of the present invention provides a variable resistor comprising: a first substrate; a plurality of comb-tooth patterns supporting the first substrate and extending with spaces therebetween; and an insulator disposed on the first substrate so as to fill the spaces between the comb-tooth patterns; wherein the comb-tooth pattern has a front end face on the opposite side of the first substrate; and the front end face is exposed from the insulator.

〔2〕本發明的態様2,可為下述可變電阻器:在態様1的可變電阻器中,前述絕緣體具有與前述第一基材相反側的第一主面;源自前述第一基材的前述前端面的高度,與源自前述第一基材的前述第一主面的高度實質上相同。 [2] Aspect 2 of the present invention may be the following variable resistor: in the variable resistor of aspect 1, the insulator has a first main surface on the opposite side of the first substrate; and the height of the front end surface from the first substrate is substantially the same as the height of the first main surface from the first substrate.

〔3〕本發明的態様3,可為下述可變電阻器:在態様1或態様2的可變電阻器中,前述絕緣體具有與前述第一基材相反側的第一主面;前述第一主面,相對於前述第一基材實質上平行地延伸。 [3] Aspect 3 of the present invention may be the following variable resistor: in the variable resistor of aspect 1 or aspect 2, the insulator has a first main surface opposite to the first substrate; the first main surface extends substantially parallel to the first substrate.

〔4〕本發明的態様4,可為下述可變電阻器:在態様1至態様3中的任一可變電阻器中,前述絕緣體,包括:第一夾雜部,位於前述梳齒圖案彼此之間;以及第二夾雜部,位於前述第一基材與前述梳齒圖案之間。 [4] Aspect 4 of the present invention may be the following variable resistor: In any of the variable resistors in aspects 1 to 3, the insulator includes: a first intervening portion located between the comb-tooth patterns; and a second intervening portion located between the first substrate and the comb-tooth pattern.

〔5〕本發明的態様5,可為下述可變電阻器:在態様1至態様4中的任一可變電阻器中,前述絕緣體具有與前述第一基材相反側的第一主面;前述可變電阻器包含阻抗體;前述複數個梳齒圖案包含與前述阻抗體連接的複 數個第一梳齒圖案;前述第一梳齒圖案,包含:前述前端面從前述絕緣體露出的第一部分;以及與前述第一部分一體化形成的同時,與前述阻抗體連接的第二部分;在相對於前述第一主面垂直的第一方向中,前述第二部分的厚度較前述第一部分的厚度更薄。 [5] Aspect 5 of the present invention may be the following variable resistor: in any of aspects 1 to 4, the insulator has a first principal surface opposite to the first substrate; the variable resistor includes a resistor; the plurality of comb-tooth patterns include a plurality of first comb-tooth patterns connected to the resistor; the first comb-tooth pattern includes: a first portion whose front end face is exposed from the insulator; and a second portion integrally formed with the first portion and connected to the resistor; the second portion is thinner than the first portion in a first direction perpendicular to the first principal surface.

〔6〕本發明的態様6,可為下述可變電阻器:在態様1至態様5中的任一可變電阻器中,前述可變電阻器,具備:阻抗體,配置在前述第一基材上;第一配線圖案,配置在前述第一基材上的同時,與前述阻抗體連接;間隔物(spacer),具有開口;第二基材,藉由前述間隔物積層於前述第一基材;連接體,位於前述開口內地配置在前述第二基材上,其透過從前述第二基材外側按壓滑件(slider)而與前述阻抗體電性連接;第二配線圖案,配置在前述第二基材上,連接前述連接體,或者配置在前述第一基材上,透過按壓前述滑件而與前述連接體電性連接;其中,在俯視中,前述連接體具有與前述阻抗體非重疊的非重疊領域;在俯視中,前述非重疊領域包含能滑動前述滑件的滑動領域;前述前端面,係前述梳齒圖案之與前述連接體對向的面;因應前述滑件的位置,能改變前述第一配線圖案與前述第二配線圖案之間的電阻值。 [6] Aspect 6 of the present invention may be the following variable resistor: In any of the variable resistors in aspects 1 to 5, the variable resistor comprises: an impedance body disposed on the first substrate; a first wiring pattern disposed on the first substrate and connected to the impedance body; a spacer having an opening; a second substrate laminated on the first substrate via the spacer; a connector disposed on the second substrate within the opening and connected to the second substrate by pressing a slider from the outside of the second substrate; The first and second wiring patterns are electrically connected to the impedance body; the second wiring pattern is disposed on the second substrate and connected to the connector, or is disposed on the first substrate and electrically connected to the connector by pressing the slider; wherein, in a top view, the connector has a non-overlapping region that does not overlap with the impedance body; in a top view, the non-overlapping region includes a sliding region in which the slider can slide; the front end surface is the surface of the comb pattern facing the connector; and the resistance value between the first and second wiring patterns can be changed in response to the position of the slider.

〔7〕本發明的態様7,可為下述可變電阻器:在態様6的可變電阻器中,前述第二配線圖案,配置在前述第二基材上的同時,與前述連接體連接;前述複數個梳齒圖案,包含連接前述阻抗體的複數個第一梳齒圖案;在俯視中,前述第一梳齒圖案與前述滑動領域重疊;前述連接體,透過從前述第二基材的外側按壓前述滑件而與前述第一梳齒圖案接觸。 [7] Aspect 7 of the present invention may be the following variable resistor: in the variable resistor of aspect 6, the second wiring pattern is disposed on the second substrate and connected to the connector; the plurality of comb-tooth patterns include a plurality of first comb-tooth patterns connected to the resistor; in a plan view, the first comb-tooth pattern overlaps the sliding region; and the connector contacts the first comb-tooth pattern by pressing the slider from the outer side of the second substrate.

〔8〕本發明的態様8,可為下述可變電阻器:在態様6的可變電阻器中,前述第二配線圖案配置在前述第一基材上;前述複數個梳齒圖案,包含與前述阻抗體連接的複數個第一梳齒圖案;在俯視中,前述第一梳齒圖案及前述第二配線圖案與前述滑動領域重疊;前述連接體,透過從前述第二基材的 外側按壓前述滑件而與前述第一梳齒圖案及前述第二配線圖案接觸。 [8] Aspect 8 of the present invention may be the following variable resistor: in the variable resistor of aspect 6, the second wiring pattern is disposed on the first substrate; the plurality of comb-tooth patterns include a plurality of first comb-tooth patterns connected to the resistor; in a plan view, the first comb-tooth pattern and the second wiring pattern overlap with the sliding area; and the connector contacts the first comb-tooth pattern and the second wiring pattern by pressing the slider from the outer side of the second substrate.

〔9〕本發明的態様9,可為下述可變電阻器:在態様6的可變電阻器中,前述第二配線圖案配置在前述第一基材上;前述複數個梳齒圖案,包含:複數個第一梳齒圖案,與前述阻抗體連接;以及複數個第二梳齒圖案,與前述第二配線圖案連接;在俯視中,前述第一及第二梳齒圖案與前述滑動領域重疊;前述第一梳齒圖案與前述第二梳齒圖案,在前述滑動領域,沿著前述連接體的延伸方向相互排列;前述連接體,透過從前述第一基材按壓前述滑件而與前述第一及前述第二梳齒圖案接觸。 [9] Aspect 9 of the present invention may be the following variable resistor: in the variable resistor of aspect 6, the second wiring pattern is disposed on the first substrate; the plurality of comb-tooth patterns include: a plurality of first comb-tooth patterns connected to the resistor; and a plurality of second comb-tooth patterns connected to the second wiring pattern; in a plan view, the first and second comb-tooth patterns overlap with the sliding region; the first comb-tooth pattern and the second comb-tooth pattern are arranged in the sliding region along the extending direction of the connector; and the connector is brought into contact with the first and second comb-tooth patterns by pressing the slider from the first substrate.

〔10〕本發明的態様10,可為下述可變電阻器:在態様6至態様9中任一可變電阻器中,前述可變電阻器,配置在前述第一基材上的同時,更具備連接前述阻抗體的第三配線圖案;前述複數個梳齒圖案,包含:第三梳齒圖案,與前述第一配線圖案連接;以及第四梳齒圖案,與前述第三配線圖案連接;在俯視中,前述第三及第四梳齒圖案與前述滑動領域重疊。 [10] Aspect 10 of the present invention may be the following variable resistor: in any of aspects 6 to 9, the variable resistor is disposed on the first substrate and further comprises a third wiring pattern connected to the resistor; the plurality of comb-tooth patterns include a third comb-tooth pattern connected to the first wiring pattern; and a fourth comb-tooth pattern connected to the third wiring pattern; and in a plan view, the third and fourth comb-tooth patterns overlap with the sliding region.

〔11〕本發明的態様11,係一種可變電阻器的製造方法,其係態様1至態様10中任一可變電阻器的製造方法,並具備:第一步驟:準備具有離型處理面的支持體;第二步驟:在前述支持體的前述離型處理面上形成前述梳齒圖案;第三步驟:為了埋入前述梳齒圖案彼此之間,在前述離型處理面上形成前述絕緣體;以及第四步驟:從前述支持體將前述梳齒圖案與前述絕緣體轉印至前述第一基材。 [11] Aspect 11 of the present invention is a method for manufacturing a variable resistor, which is the method for manufacturing a variable resistor according to any one of aspects 1 to 10, and comprises: a first step of preparing a support having a release-treated surface; a second step of forming the comb-tooth pattern on the release-treated surface of the support; a third step of forming the insulator on the release-treated surface to embed the comb-tooth pattern; and a fourth step of transferring the comb-tooth pattern and the insulator from the support to the first substrate.

在本發明中,透過將絕緣體埋入梳齒圖案彼此之間的空間,並使與梳齒圖案的第一基材相反側的前端面從絕緣體露出,能抑制梳齒圖案的劣化。 In the present invention, by embedding an insulator in the spaces between the comb-tooth patterns and leaving the front end of the comb-tooth pattern opposite to the first substrate exposed from the insulator, deterioration of the comb-tooth pattern can be suppressed.

1A~1C:可變電阻器 1A~1C: Variable resistor

10A~10C:下側膜基板 10A~10C: Bottom film substrate

11:基材 11: Base Material

11a:上面 11a: Above

12:上面 12: Above

20:第一阻劑層 20: First resist layer

21:薄化部 21: Thinning area

21a:上面 21a: Above

22:突出部 22: Protrusion

22a:上面 22a: Above

23:第一夾雜部 23: First clip miscellaneous part

23a:第一露出部 23a: First exposed portion

23b,23c:第一及第二非露出部 23b, 23c: First and second non-exposed portions

24:第二夾雜部 24: Second fold

25:第三夾雜部 25: Third fold

31:配線圖案 31: Wiring diagram

35:配線圖案 35: Wiring diagram

40:阻抗體 40: Impedance

45,45a~45j:梳齒圖案 45,45a~45j: Comb pattern

46:上面 46: Above

47:下面 47: Below

48a:第二露出部 48a: Second exposed portion

48b,48c:第三及第四非露出部 48b, 48c: Third and fourth non-exposed areas

50:第二阻劑層 50: Second resist layer

50a:上面 50a: Above

51:開口 51: Opening

60A,60B:上側膜基板 60A, 60B: Upper side membrane substrate

61:基材 61: Base material

62:下面 62: Below

63:上面 63: Above

70:配線圖案 70: Wiring diagram

71:第二本體部 71: Second body part

711:平行部 711: Parallel Department

72:第二保護層 72: Second protective layer

75,75a~75i:梳齒圖案 75,75a~75i: Comb pattern

76:第二前端面 76: Second front end face

80:連接體 80: Connector

80a,80b:緣部 80a,80b: Margin

81:第一本體部 81: First Body Section

82:第一保護層 82: First protective layer

90:間隔物 90: spacer

91:開口 91: Opening

100:滑件 100: Slide

110:按壓部 110: Pressing part

200:離型膜 200: Release film

201:膜 201: Membrane

202:離型層 202: Exfoliation layer

NA:非重疊領域 NA: Non-overlapping fields

SA:滑動領域 SA: Sliding Area

H1,H2,H3:高度 H 1 ,H 2 ,H 3 : Height

T1,T2,T3,T4,T5,T6:厚度 T 1 , T 2 , T 3 , T 4 , T 5 , T 6 : Thickness

圖1為顯示本發明第一實施形態之可變電阻器的俯視圖。 Figure 1 is a top view of a variable resistor according to the first embodiment of the present invention.

圖2為沿著圖1之II-II線的剖面圖。 Figure 2 is a cross-sectional view taken along line II-II in Figure 1.

圖3為沿著圖1之III-III線的剖面圖。 Figure 3 is a cross-sectional view taken along line III-III in Figure 1.

圖4為沿著圖1之IV-IV線的剖面圖。 Figure 4 is a cross-sectional view taken along line IV-IV in Figure 1.

圖5為沿著圖1之V-V線的剖面圖。 Figure 5 is a cross-sectional view along line V-V in Figure 1.

圖6為顯示本發明第一實施形態之可變電阻器的下側膜基板的俯視圖。 Figure 6 is a top view of the lower film substrate of the variable resistor according to the first embodiment of the present invention.

圖7為顯示本發明第一實施形態之可變電阻器的間隔物及上側膜基板的底面圖。 Figure 7 is a bottom view showing the spacer and upper film substrate of the variable resistor according to the first embodiment of the present invention.

圖8(A)~圖8(D)為顯示本發明第一實施形態之可變電阻器的製造方法的一例的剖面圖。 Figures 8(A) to 8(D) are cross-sectional views illustrating an example of a method for manufacturing a variable resistor according to the first embodiment of the present invention.

圖9(A)~圖9(D)為顯示本發明第一實施形態之可變電阻器的製造方法的一例的剖面圖。 Figures 9(A) to 9(D) are cross-sectional views illustrating an example of a method for manufacturing a variable resistor according to the first embodiment of the present invention.

圖10為顯示本發明第二實施形態之可變電阻器的俯視圖。 Figure 10 is a top view of a variable resistor according to a second embodiment of the present invention.

圖11為沿著圖10之XI-XI線的剖面圖。 Figure 11 is a cross-sectional view taken along line XI-XI in Figure 10.

圖12為顯示本發明第二實施形態之可變電阻器的下側膜基板的俯視圖。 Figure 12 is a top view of the lower film substrate of the variable resistor according to the second embodiment of the present invention.

圖13為顯示本發明第二實施形態之可變電阻器的間隔物及上側膜基板的底面圖。 Figure 13 is a bottom view showing the spacer and upper film substrate of the variable resistor according to the second embodiment of the present invention.

圖14為顯示本發明第三實施形態之可變電阻器的俯視圖。 Figure 14 is a top view of a variable resistor according to a third embodiment of the present invention.

圖15為沿著圖14之XV-XV線的剖面圖。 Figure 15 is a cross-sectional view taken along line XV-XV in Figure 14.

圖16為顯示本發明第三實施形態之可變電阻器的下側膜基板的俯視圖。 Figure 16 is a top view of the lower film substrate of the variable resistor according to the third embodiment of the present invention.

[用以實施發明的形態] [Form used to implement the invention]

以下將基於圖面說明本發明的實施形態。 The following describes the implementation of the present invention based on the drawings.

<<第一實施形態>> <<First Implementation Form>>

圖1為顯示第一實施形態之可變電阻器1A的俯視圖、圖2為沿著圖1之II-II線的剖面圖、圖3為沿著圖1之III-III線的剖面圖、圖4為沿著圖1之IV-IV線的剖面圖、圖5為沿著圖1之V-V線的剖面圖。此外,圖6為顯示第一實施形態之可變電阻器1A的下側膜基板10A的俯視圖、圖7為顯示第一實施形態之可變電阻器1A的間隔物90及上側膜基板60A的底面圖。 Figure 1 is a top view of a variable resistor 1A according to the first embodiment; Figure 2 is a cross-sectional view taken along line II-II in Figure 1; Figure 3 is a cross-sectional view taken along line III-III in Figure 1; Figure 4 is a cross-sectional view taken along line IV-IV in Figure 1; and Figure 5 is a cross-sectional view taken along line V-V in Figure 1. Furthermore, Figure 6 is a top view of the lower film substrate 10A of the variable resistor 1A according to the first embodiment; and Figure 7 is a bottom view of the spacer 90 and upper film substrate 60A of the variable resistor 1A according to the first embodiment.

本實施形態之可變電阻器1A,如圖1~圖7所示,具備:下側膜基板10A(參照圖2~圖6)、上側膜基板60A(參照圖2~圖5、圖7)、間隔物90、以及滑件100。 As shown in Figures 1 to 7 , the variable resistor 1A of this embodiment comprises a lower film substrate 10A (see Figures 2 to 6 ), an upper film substrate 60A (see Figures 2 to 5 and 7 ), a spacer 90 , and a slider 100 .

下側膜基板10A,具有:阻抗體40、複數根(本例為10根)梳齒圖案45a~45j、配線圖案31、35。再者,在本實施形態中,有將複數個梳齒圖案45a~45j統稱為「梳齒圖案45」的情形。 The lower film substrate 10A includes an impedance element 40, a plurality of (10 in this example) comb-tooth patterns 45a through 45j, and wiring patterns 31 and 35. In this embodiment, the plurality of comb-tooth patterns 45a through 45j may be collectively referred to as "comb-tooth pattern 45."

另一方面,上側膜基板60A具有與阻抗體40及配線圖案70電性連接的連接體80。這些膜基板10A、60A,隔著間隔物90而積層,並透過此間隔物90,確保了膜基板10A、60A之間的間隔。滑件100在滑動領域SA(參照圖1)中,並構成為按壓上側膜基板60A上的同時滑動。透過此滑件100的按壓,可藉由連接體80及梳齒圖案45而將阻抗體40及配線圖案70電性連接。 Meanwhile, the upper film substrate 60A includes a connector 80 electrically connected to the resistor 40 and the wiring pattern 70. These film substrates 10A and 60A are stacked with spacers 90 interposed therebetween, ensuring a gap between them. The slider 100 is configured to slide while pressing against the upper film substrate 60A within the sliding area SA (see Figure 1). The pressing action of the slider 100 electrically connects the resistor 40 and the wiring pattern 70 via the connector 80 and the comb pattern 45.

在此可變電阻器1A中,透過滑件100按壓上側膜基板60A的同時滑動,可使接觸連接體80的梳齒圖案45依序變化。因此,使連接體80與阻抗體40的電性連接位置變化,而能改變阻抗體40的電阻長(電阻值)。作為這種可變電阻器1A的用途,例如能例示出:可變電阻元件、位置感測器、開關、編碼器等。再者,本實施形態之可變電阻器1A的用途並不特別限定於上述。 In this variable resistor 1A, the comb pattern 45 of the contact connector 80 is sequentially changed by sliding the slider 100 while pressing the upper film substrate 60A. This changes the electrical connection position between the connector 80 and the resistor 40, thereby varying the resistance length (resistance value) of the resistor 40. Examples of applications for this variable resistor 1A include variable resistance elements, position sensors, switches, and encoders. The applications of the variable resistor 1A of this embodiment are not limited to those described above.

以下將就本實施形態之可變電阻器1A的構成詳細說明。 The following is a detailed description of the structure of the variable resistor 1A of this embodiment.

下側膜基板10A,如圖6所示,係具備下列元件的配線板:基材 11、第一阻劑層20、配線圖案31、35、阻抗體40、梳齒圖案45、及第二阻劑層50。再者,本實施形態之基材11相當於本發明之「第一基材」的一例、本實施形態之第一阻劑層20相當於本發明之「絕緣體」的一例、本實施形態之梳齒圖案45a~45j相當於「梳齒圖案」的一例、本實施形態之梳齒圖案45a相當於本發明之「第三梳齒圖案」的一例、本實施形態之梳齒圖案45b~45i相當於「第一梳齒圖案」的一例、以及本實施形態之梳齒圖案45j相當於本發明之「第四梳齒圖案」的一例。此外,本實施形態之配線圖案31相當於本發明之「第一配線圖案」的一例,而本實施形態之配線圖案35相當於本發明之「第三配線圖案」的一例。 As shown in Figure 6, lower film substrate 10A is a wiring board comprising the following components: base material 11, first resist layer 20, wiring patterns 31 and 35, resistor 40, comb pattern 45, and second resist layer 50. Furthermore, the substrate 11 of the present embodiment is equivalent to an example of the "first substrate" of the present invention, the first resist layer 20 of the present embodiment is equivalent to an example of the "insulator" of the present invention, the comb patterns 45a~45j of the present embodiment are equivalent to an example of the "comb pattern", the comb pattern 45a of the present embodiment is equivalent to an example of the "third comb pattern" of the present invention, the comb patterns 45b~45i of the present embodiment are equivalent to an example of the "first comb pattern", and the comb pattern 45j of the present embodiment is equivalent to an example of the "fourth comb pattern" of the present invention. Furthermore, the wiring pattern 31 of this embodiment corresponds to an example of the "first wiring pattern" of the present invention, and the wiring pattern 35 of this embodiment corresponds to an example of the "third wiring pattern" of the present invention.

基材11,係由具有可撓性及電絶緣性的材料所構成的膜狀部件。構成此基材11的材料,例如能例示出樹脂材料等,更具體而言,能例示出:聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二酯(polyethylene naphthalate,PEN)等。更具體而言,能將具有黏著層的黏著膠帶等作為基材11而使用在PET膜的一側的主面。或者,亦可取代黏著層而使用熱熔膠。再者,此基材11亦可不具有可撓性。 Substrate 11 is a film-like member made of a flexible and electrically insulating material. Examples of materials constituting substrate 11 include resin materials, more specifically polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). More specifically, an adhesive tape having an adhesive layer can be used as substrate 11, applied to one main surface of the PET film. Alternatively, hot melt adhesive can be used in place of the adhesive layer. Furthermore, substrate 11 does not necessarily have to be flexible.

第一阻劑層20設於基材11的上面12。此第一阻劑層20,係透過使具有電絕緣性的阻劑材料固化(硬化)而形成。作為此阻劑材料的具體範例,例如能例示出:環氧樹脂、胺甲酸乙酯樹脂、聚酯樹脂、丙烯酸樹脂等樹脂材料。 The first resist layer 20 is provided on the upper surface 12 of the substrate 11. This first resist layer 20 is formed by curing (hardening) an electrically insulating resist material. Specific examples of this resist material include resin materials such as epoxy resin, urethane resin, polyester resin, and acrylic resin.

如圖2及圖6所示,此第一阻劑層20具有薄化部21及突出部22。如圖6所示,此薄化部21圍繞突出部22,且相對於突出部22較薄。 As shown in Figures 2 and 6, the first resist layer 20 has a thinned portion 21 and a protruding portion 22. As shown in Figure 6, the thinned portion 21 surrounds the protruding portion 22 and is thinner than the protruding portion 22.

薄化部21,在俯視(從上方或下方觀看可變電阻器1A(相對於可變電阻器1A的主面的法線方向(圖中的Z方向))之情形下的俯視)中,與第二阻劑層50重疊且未從第二阻劑層50露出。此外,如圖3所示,薄化部21未被第二阻劑層50直接地覆蓋,而具有藉由配線圖案31、35、阻抗體40及梳齒圖案45 而被第二阻劑層50間接地覆蓋的部分。 In a top view (a top view when viewing the variable resistor 1A from above or below (in the direction normal to the main surface of the variable resistor 1A (the Z direction in the figure))), the thinned portion 21 overlaps with the second resistor layer 50 and does not protrude from the second resistor layer 50. Furthermore, as shown in Figure 3, the thinned portion 21 is not directly covered by the second resistor layer 50 but has portions indirectly covered by the second resistor layer 50 via the wiring patterns 31 and 35, the resistor 40, and the comb pattern 45.

另一方面,如圖2及圖6所示,本實施形態之突出部22被薄化部21包圍。此突出部22在俯視中未與第二阻劑層50重疊,並從第二阻劑層50露出。如圖2所示,突出部22的厚度較薄化部21的厚度更厚,且突出部22的上面22a,相對於薄化部21的上面21a,往上方(圖中的+Z方向)突出。因此,突出部22埋入第二阻劑層50的開口51。此外,本實施形態之突出部22的上面22a,相當於本發明之「第一主面」的一例。 On the other hand, as shown in Figures 2 and 6 , the protrusion 22 of this embodiment is surrounded by the thinned portion 21. This protrusion 22 does not overlap with the second resist layer 50 in a top view and is exposed from the second resist layer 50. As shown in Figure 2 , the protrusion 22 is thicker than the thinned portion 21, and the upper surface 22a of the protrusion 22 protrudes upward (in the +Z direction in the figure) relative to the upper surface 21a of the thinned portion 21. Therefore, the protrusion 22 is embedded in the opening 51 of the second resist layer 50. Furthermore, the upper surface 22a of the protrusion 22 of this embodiment corresponds to an example of the "first principal surface" of the present invention.

突出部22的上面22a,相對於基材11的上面12為實質地平行。此外,自基材11至上面22a的高度H1,與自基材11至第二阻劑層50的上面50a的高度H2實質上相同(H1=H2),使上面22a、50a成為實質的一面。 The top surface 22a of the protrusion 22 is substantially parallel to the top surface 12 of the substrate 11. Furthermore, the height H1 from the substrate 11 to the top surface 22a is substantially the same as the height H2 from the substrate 11 to the top surface 50a of the second resist layer 50 ( H1 = H2 ), making the top surfaces 22a and 50a substantially parallel.

此外,如圖2、圖3及圖6所示,梳齒圖案45從此第一阻劑層20的薄化部21橫跨突出部22而埋設。第一阻劑層20,在梳齒圖案45的周圍,進一步具有:複數個(本例為9個)第一夾雜部23、複數個(本例為10個)第二夾雜部24、以及複數個(本例為2個)第三夾雜部25。如圖2所示,在本實施形態之第一阻劑層20中,在第三夾雜部25、25之間,複數個第一夾雜部23與複數個第二夾雜部24沿著X方向交互排列。再者,第一及第二夾雜部23、24的個數並無特別限定,而可因應梳齒圖案45的個數而變化。 Furthermore, as shown in Figures 2, 3, and 6, a comb-tooth pattern 45 is embedded from the thinned portion 21 of the first resist layer 20 across the protruding portion 22. Surrounding the comb-tooth pattern 45, the first resist layer 20 further includes a plurality of (nine in this example) first intercalating portions 23, a plurality of (ten in this example) second intercalating portions 24, and a plurality of (two in this example) third intercalating portions 25. As shown in Figure 2, in the first resist layer 20 of this embodiment, the plurality of first intercalating portions 23 and the plurality of second intercalating portions 24 are alternately arranged along the X-direction between the third intercalating portions 25. Furthermore, the number of the first and second clamping portions 23 and 24 is not particularly limited and can vary depending on the number of the comb tooth patterns 45.

如圖6所示,第一夾雜部23為了埋入梳齒圖案45彼此之間的空間,位於梳齒圖案45彼此之間。第一夾雜部23,從第一阻劑層20的薄化部21橫跨突出部22而沿著梳齒圖案45的延伸方向(圖中的Y方向)延伸。 As shown in Figure 6, the first interposing portion 23 is located between the tooth patterns 45 to fill the spaces between them. The first interposing portion 23 extends from the thinned portion 21 of the first resist layer 20 across the protruding portion 22 and along the extension direction of the tooth pattern 45 (the Y direction in the figure).

如圖5所示,第一夾雜部23包含:第一露出部23a、第一非露出部23b、及第二非露出部23c。第一露出部23a、第一及第二非露出部23b、23c,係互相為一體地形成。 As shown in Figure 5, the first intervening portion 23 includes a first exposed portion 23a, a first non-exposed portion 23b, and a second non-exposed portion 23c. The first exposed portion 23a, the first non-exposed portion 23b, and the second non-exposed portion 23c are integrally formed.

第一露出部23a,構成突出部22的一部,並從第二阻劑層50露出。 此第一露出部23a之突出部22的上面22a,與第二阻劑層50的上面50a成為實質的一面。此外,第一露出部23a之突出部22的上面22a的表面粗糙度Ra,例如能為0.01μm~0.1μm。 The first exposed portion 23a constitutes a portion of the protrusion 22 and is exposed from the second resist layer 50. The upper surface 22a of the protrusion 22 of the first exposed portion 23a substantially forms a surface with the upper surface 50a of the second resist layer 50. Furthermore, the surface roughness Ra of the upper surface 22a of the protrusion 22 of the first exposed portion 23a can be, for example, 0.01 μm to 0.1 μm.

第一及第二非露出部23b、23c,構成薄化部21的一部。第一非露出部23b位於第一露出部23a與阻抗體40之間。第一非露出部23b之薄化部21的上面21a被第二阻劑層50覆蓋。因此,第一非露出部23b夾雜在第二阻劑層50與基材11之間。 The first and second non-exposed portions 23b and 23c constitute a portion of the thinned portion 21. The first non-exposed portion 23b is located between the first exposed portion 23a and the resistor 40. The upper surface 21a of the thinned portion 21 of the first non-exposed portion 23b is covered by the second resist layer 50. Therefore, the first non-exposed portion 23b is sandwiched between the second resist layer 50 and the substrate 11.

第二非露出部23c連接至此第一非露出部23b。第二非露出部23c之薄化部21的上面21a被阻抗體40覆蓋。因此,第二非露出部23c夾雜在阻抗體40與基材11之間。 The second non-exposed portion 23c is connected to the first non-exposed portion 23b. The upper surface 21a of the thinned portion 21 of the second non-exposed portion 23c is covered by the resistor 40. Therefore, the second non-exposed portion 23c is sandwiched between the resistor 40 and the substrate 11.

此外,在本實施形態中,第一露出部23a的厚度T1較第一非露出部23b的厚度T2更厚的同時,第一非露出部23b的厚度T2亦較第二非露出部23c的厚度T3更厚(T1>T2>T3)。因此,在本實施形態之第一夾雜部23中,第一露出部23a與第一非露出部23b之間形成有段差的同時,第一非露出部23b與第二非露出部23c之間亦形成有段差。因此,第一夾雜部23的厚度,隨著接近梳齒圖案45的阻抗體40側的端部(隨著往圖中的-Y方向)而階段性地變薄。再者,本實施形態之厚度,係相對於基材11的上面12之垂直方向(圖中的Z方向)中的厚度,本實施形態之Z方向相當於本發明之「第一方向」的一例。 Furthermore, in this embodiment, the thickness T1 of the first exposed portion 23a is greater than the thickness T2 of the first non-exposed portion 23b. Meanwhile, the thickness T2 of the first non-exposed portion 23b is greater than the thickness T3 of the second non-exposed portion 23c ( T1 > T2 > T3 ). Therefore, in the first interposed portion 23 of this embodiment, a step is formed between the first exposed portion 23a and the first non-exposed portion 23b, as well as between the first non-exposed portion 23b and the second non-exposed portion 23c. Consequently, the thickness of the first interposed portion 23 gradually decreases as it approaches the end of the comb-tooth pattern 45 on the resistor 40 side (in the -Y direction in the figure). Furthermore, the thickness of this embodiment is the thickness in the vertical direction (Z direction in the figure) relative to the upper surface 12 of the substrate 11. The Z direction of this embodiment is an example of the "first direction" of the present invention.

如圖2及圖3所示,第二夾雜部24位於梳齒圖案45的下面47與基材11的上面12之間。本實施形態之第二夾雜部24位於二個第一夾雜部23、23之間,並與梳齒圖案45具有同一寬度的直方體形狀。 As shown in Figures 2 and 3, the second interposing portion 24 is located between the lower surface 47 of the tooth pattern 45 and the upper surface 12 of the substrate 11. In this embodiment, the second interposing portion 24 is located between the two first interposing portions 23, 23 and has a rectangular shape with the same width as the tooth pattern 45.

像這樣,透過使第二夾雜部24位於梳齒圖案45與基材11之間,能提升相對於基材11之梳齒圖案45的接著力,故能抑制梳齒圖案45的劣化。此外,透過第二夾雜部24,亦能抑制從基材11側的水蒸氣等侵入,故能抑制梳齒圖案 45的劣化。 Positioning the second intervening portion 24 between the tooth pattern 45 and the substrate 11 in this manner enhances the bonding strength of the tooth pattern 45 to the substrate 11, thereby suppressing degradation of the tooth pattern 45. Furthermore, the second intervening portion 24 prevents the intrusion of water vapor and other substances from the substrate 11 side, thereby suppressing degradation of the tooth pattern 45.

如圖2所示,第三夾雜部25位於第二阻劑層50與梳齒圖案45a、45j之間。第三夾雜部25亦構成突出部22的一部並從第二阻劑層50露出。此第三夾雜部25的上面,包含於突出部22的上面22a,故其與第二阻劑層50的上面50a成為實質的一面。此外,第三夾雜部25之突出部22的上面22a的表面粗糙度Ra,例如能為0.01μm~0.1μm。 As shown in Figure 2, the third interposing portion 25 is located between the second resist layer 50 and the comb patterns 45a and 45j. The third interposing portion 25 also constitutes a portion of the protrusion 22 and is exposed from the second resist layer 50. The top surface of the third interposing portion 25 is included in the top surface 22a of the protrusion 22, and thus forms a substantial surface with the top surface 50a of the second resist layer 50. Furthermore, the surface roughness Ra of the top surface 22a of the protrusion 22 of the third interposing portion 25 can be, for example, 0.01 μm to 0.1 μm.

如圖3所示,配線圖案31、35設於第一阻劑層20的薄化部21上。配線圖案31、35,係透過使導電膠固化(硬化)而形成。導電膠,係透過將導電性粒子與黏合劑樹脂與水或溶劑、及各種添加劑混合而構成。構成此配線圖案31、35的導電膠,係具有較小之電阻值的低電阻導電膠。再者,配線圖案31、35的形成方法,並不特別限定於上述。 As shown in Figure 3, wiring patterns 31 and 35 are provided on thinned portion 21 of first resist layer 20. Wiring patterns 31 and 35 are formed by curing (hardening) a conductive adhesive. The conductive adhesive is formed by mixing conductive particles, a binder resin, water or a solvent, and various additives. The conductive adhesive forming these wiring patterns 31 and 35 is a low-resistance conductive adhesive with a relatively low resistance value. The method for forming wiring patterns 31 and 35 is not particularly limited to the method described above.

作為導電性粒子的具體範例,能例示出:銀、銅、鎳、錫、鉍、鋅、銦、鈀、及這些的合金等。此外,作為黏合劑樹脂的具體範例,能例示出:丙烯酸樹脂、聚酯樹脂、環氧樹脂、乙烯樹脂、胺甲酸乙酯樹脂、酚醛樹脂、聚醯亞胺樹脂、矽酮樹脂、氟樹脂等。進一步,作為包含於導電膠的溶劑,能例示出:α-松油醇、丁基卡必醇乙酸酯(butyl carbitol acetate)、丁基卡必醇、1-癸醇、丁基賽路蘇(butyl cellosolve)、二乙二醇單乙醚醋酸酯、十四烷等。 Specific examples of conductive particles include silver, copper, nickel, tin, bismuth, zinc, indium, palladium, and alloys thereof. Specific examples of binder resins include acrylic resins, polyester resins, epoxy resins, vinyl resins, urethane resins, phenolic resins, polyimide resins, silicone resins, and fluororesins. Furthermore, examples of solvents included in the conductive adhesive include α-terpineol, butyl carbitol acetate, butyl carbitol, 1-decanol, butyl cellosolve, diethylene glycol monoethyl ether acetate, and tetradecane.

雖無特別限定,但在本實施形態中,作為低電阻的導電膠,使用以銀作為導電性粒子的主成分的銀膠,或者以銅作為導電性粒子的主成分的銅膠。再者,作為導電膠所含有的導電性粒子,可使用金屬鹽。作為金屬鹽,能舉出上述金屬的鹽。此外,亦可從上述導電膠省略黏合劑樹脂。此外,亦可替代上述導電膠而使用導電油墨。 Although not particularly limited, in this embodiment, a silver paste containing silver as the main component of the conductive particles, or a copper paste containing copper as the main component of the conductive particles, is used as the low-resistance conductive paste. Furthermore, the conductive particles contained in the conductive paste may be metal salts. Examples of the metal salts include salts of the aforementioned metals. Furthermore, the binder resin may be omitted from the conductive paste. Furthermore, conductive ink may be used in place of the conductive paste.

如圖6所示,本實施形態之配線圖案31、35,連接至阻抗體40的兩端。本實施形態之配線圖案31、35,雖然在與阻抗體40大略平行的圖中的X方 向延伸,但並不限於此,故亦可往Y方向等X方向以外的方向延伸。 As shown in Figure 6, the wiring patterns 31 and 35 of this embodiment are connected to both ends of the resistor 40. Although the wiring patterns 31 and 35 of this embodiment extend in the X direction of the figure, which is roughly parallel to the resistor 40, this is not limited to this and may also extend in directions other than the X direction, such as the Y direction.

如圖3及圖6所示,阻抗體40設於配線圖案31、35之間,且沿著圖中X方向延伸。此阻抗體40亦與上述配線圖案31、35相同,係透過使導電膠硬化而形成。 As shown in Figures 3 and 6, the resistor 40 is located between the wiring patterns 31 and 35 and extends along the X direction in the figures. Like the wiring patterns 31 and 35, the resistor 40 is formed by curing a conductive adhesive.

構成此阻抗體40的導電膠,係較上述低電阻的導電膠具有較高電阻值的高電阻導電膠。構成此阻抗體40的導電膠,含有較構成上述配線圖案31、35的導電膠的導電性粒子的電阻率具有更高電阻率的導電性粒子。亦即,阻抗體40係由具有較構成配線圖案31、35的材料的電阻率更高電阻率的材料所構成,阻抗體40的電阻值,係以能無視配線圖案31、35的電阻值的程度而較配線圖案31、35的電阻值充分地更高。具體而言,阻抗體40的電阻值係配線圖案31、35的電阻值的10倍以上,較佳為配線圖案31、35的電阻值的100倍以上。此外,構成阻抗體40的材料的電阻率,係構成配線圖案31、35的材料的電阻率的10倍以上,較佳為100倍以上。 The conductive paste comprising this resistor 40 is a high-resistance conductive paste having a higher resistance than the aforementioned low-resistance conductive paste. The conductive paste comprising this resistor 40 contains conductive particles having a higher resistivity than the conductive particles comprising the conductive paste comprising the wiring patterns 31 and 35. In other words, resistor 40 is made of a material having a higher resistivity than the material comprising the wiring patterns 31 and 35, and the resistance of resistor 40 is sufficiently higher than the resistance of the wiring patterns 31 and 35 to the extent that the resistance of the wiring patterns 31 and 35 is negligible. Specifically, the resistance of resistor 40 is at least 10 times the resistance of wiring patterns 31 and 35, and preferably at least 100 times the resistance of wiring patterns 31 and 35. Furthermore, the resistivity of the material constituting resistor 40 is at least 10 times the resistivity of the material constituting wiring patterns 31 and 35, and preferably at least 100 times the resistivity of the material constituting wiring patterns 31 and 35.

作為這樣高電阻的導電膠的具體範例,能例示出碳糊(carbon paste)。作為構成阻抗體40的導電膠所含有的導電性粒子的具體範例,能例示出石墨、碳黑(爐黑、乙炔黑、科琴黑(Ketjen black))、奈米碳管、奈米碳纖維等碳系材料。 A specific example of such a high-resistance conductive paste is carbon paste. Specific examples of the conductive particles contained in the conductive paste constituting resistor 40 include carbon-based materials such as graphite, carbon black (furnace black, acetylene black, Ketjen black), carbon nanotubes, and carbon nanofibers.

如上所述,覆蓋此阻抗體40一側的配線圖案31的端部的同時,亦覆蓋他側的配線圖案35的端部。透過此阻抗體40,可連接配線圖案31、35彼此。雖無特別圖示,但相對於一側的配線圖案31連接至電源,他側的配線圖案35則接地。 As mentioned above, while covering the end of wiring pattern 31 on one side of the resistor 40, it also covers the end of wiring pattern 35 on the other side. Through this resistor 40, wiring patterns 31 and 35 are connected to each other. Although not specifically shown, while wiring pattern 31 on one side is connected to the power supply, wiring pattern 35 on the other side is connected to ground.

梳齒圖案45a~45j與配線圖案31、35相同,係由使低電阻的導電膠硬化而形成。亦即,各自的梳齒圖案45a~45j,係由具有較構成阻抗體40的材料的電阻率更低之電阻率的材料所構成,阻抗體40的電阻值,係各自以能無視 梳齒圖案45a~45j的電阻值的程度而較梳齒圖案45a~45j的電阻值充分地更高。具體而言,阻抗體40的電阻值係梳齒圖案45a~45j的電阻值的10倍以上,較佳為梳齒圖案45a~45j的電阻值的100倍以上。此外,構成阻抗體40的材料的電阻率,係構成梳齒圖案45a~45j的材料的電阻率的10倍以上,較佳為100倍以上。 Like wiring patterns 31 and 35, comb patterns 45a-45j are formed by curing a low-resistance conductive adhesive. Specifically, each comb pattern 45a-45j is made of a material with a lower resistivity than the material forming resistor 40. The resistance of resistor 40 is sufficiently higher than that of each comb pattern 45a-45j to the extent that the resistance of each comb pattern 45a-45j is negligible. Specifically, the resistance of resistor 40 is at least 10 times, and preferably at least 100 times, the resistance of comb patterns 45a-45j. Furthermore, the resistivity of the material constituting the resistor 40 is at least 10 times, and preferably at least 100 times, the resistivity of the material constituting the comb patterns 45a to 45j.

如圖6所示,圖中左端的梳齒圖案45a從配線圖案31分岐,並沿著圖中Y方向突出突出。亦即,此梳齒圖案45a連接至配線圖案31的同時,延伸至滑動領域SA(參照圖1)的下方。相同地,圖中右端的梳齒圖案45j從配線圖案35分岐,並沿著圖中Y方向突出。亦即,此梳齒圖案45j連接至配線圖案35的同時,延伸至滑動領域SA(參照圖1)的下方。 As shown in Figure 6, the comb pattern 45a on the left side of the figure branches off from the wiring pattern 31 and protrudes in the Y direction in the figure. In other words, this comb pattern 45a is connected to the wiring pattern 31 and extends below the sliding area SA (see Figure 1). Similarly, the comb pattern 45j on the right side of the figure branches off from the wiring pattern 35 and protrudes in the Y direction in the figure. In other words, this comb pattern 45j is connected to the wiring pattern 35 and extends below the sliding area SA (see Figure 1).

與此相對,如圖3所示,位於兩端的梳齒圖案45a、45j之間的8根梳齒圖案45b~45i,透過使這個梳齒圖案45b~45i的端部被埋設於阻抗體40,而與這個阻抗體40電性連接。接著,如圖6所示,這些梳齒圖案45b~45i從阻抗體40往+Y方向延伸並突出。亦即,此梳齒圖案45b~45i連接至阻抗體40的同時,延伸至滑動領域SA(參照圖1)的下方。再者,兩端的梳齒圖案45a、45j亦可不從配線圖案31、35分岐,而與梳齒圖案45b~45i相同地埋設於阻抗體40。 In contrast, as shown in Figure 3 , the eight tooth patterns 45b through 45i located between the two end tooth patterns 45a and 45j are electrically connected to the resistor 40 by having their ends embedded in the resistor 40. Furthermore, as shown in Figure 6 , these tooth patterns 45b through 45i extend and protrude from the resistor 40 in the +Y direction. In other words, these tooth patterns 45b through 45i are connected to the resistor 40 and extend below the sliding area SA (see Figure 1 ). Furthermore, the tooth patterns 45a and 45j at the two ends can be embedded in the resistor 40 similarly to the tooth patterns 45b through 45i, rather than branching from the wiring patterns 31 and 35.

任一梳齒圖案45a~45j,皆沿著圖中Y方向延伸,使梳齒圖案45a~45j的平面形狀成為線狀。此複數個梳齒圖案45a~45j係實質地平行排列。此外,此複數個梳齒圖案45a~45j,係實質地等間隔配置。再者,梳齒圖案45的根數並不特別限定於上述。順帶一提,如後述般,梳齒圖案45的根數越多,能使可變電阻器1A的輸出的解析能力(解析度)越高。此外,若可確保梳齒圖案45a~45j之間的間隔,則梳齒圖案45a~45j彼此的間隔並不限定於等間隔。 Each of the comb patterns 45a-45j extends along the Y direction in the figure, forming a linear planar shape. These multiple comb patterns 45a-45j are arranged substantially in parallel. Furthermore, these multiple comb patterns 45a-45j are arranged at substantially equal intervals. Furthermore, the number of comb patterns 45 is not particularly limited to the number described above. Incidentally, as will be described later, a greater number of comb patterns 45 increases the resolution of the output of the variable resistor 1A. Furthermore, as long as the spacing between the comb patterns 45a-45j can be ensured, the spacing between the comb patterns 45a-45j is not limited to equal intervals.

如圖4所示,梳齒圖案45b~45i包含:第二露出部48a、第三非露出部48b、及第四非露出部48c。第二露出部48a與第三及第四非露出部48b、48c互相為一體地形成。本實施形態之第二露出部48a相當於本發明之「第一部分」 的一例、本實施形態之第四非露出部48c相當於本發明之「第二部分」的一例。 As shown in Figure 4, the comb patterns 45b-45i include a second exposed portion 48a, a third non-exposed portion 48b, and a fourth non-exposed portion 48c. The second exposed portion 48a is integrally formed with the third and fourth non-exposed portions 48b and 48c. The second exposed portion 48a of this embodiment corresponds to an example of the "first portion" of the present invention, while the fourth non-exposed portion 48c of this embodiment corresponds to an example of the "second portion" of the present invention.

第二露出部48a位於第一夾雜部23彼此之間。在此第二露出部48a中,梳齒圖案45b~45i的上面46從第一阻劑層20的第一夾雜部23露出。此外,此上面46亦未被第二阻劑層50覆蓋。再者,本實施形態之上面46相當於本發明之「前端面」的一例。 The second exposed portion 48a is located between the first intervening portions 23. In this second exposed portion 48a, the upper surface 46 of the comb-tooth patterns 45b-45i is exposed from the first intervening portion 23 of the first resist layer 20. Furthermore, this upper surface 46 is not covered by the second resist layer 50. Furthermore, the upper surface 46 in this embodiment is an example of a "front end surface" in the present invention.

此外,在本實施形態中,從基材11至上面46的高度H3,與上述的上面22a、50a的高度H1、H2為實質上相同(H1=H2=H3)。亦即,上面46、22a、50a為實質的一面。此外,第二露出部48a之梳齒圖案45b~45i的上面46的表面粗糙度Ra,例如能為0.01μm~0.1μm。 Furthermore, in this embodiment, the height H 3 from the substrate 11 to the upper surface 46 is substantially the same as the heights H 1 and H 2 of the upper surfaces 22 a and 50 a described above ( H 1 = H 2 = H 3 ). In other words, the upper surfaces 46 , 22 a , and 50 a are substantially one surface. Furthermore, the surface roughness Ra of the upper surface 46 of the comb-tooth patterns 45 b - 45 i of the second exposed portion 48 a can be, for example, 0.01 μm to 0.1 μm.

此外,在本實施形態中,上面46相對於基材11的上面12為實質地平行。因此,上面46相對於上面22a及上面50a亦實質地平行。 Furthermore, in this embodiment, the upper surface 46 is substantially parallel to the upper surface 12 of the substrate 11. Therefore, the upper surface 46 is also substantially parallel to the upper surface 22a and the upper surface 50a.

第三非露出部48b位於第二露出部48a與阻抗體40之間。第三非露出部48b之上面46被第二阻劑層50覆蓋。因此,第三非露出部48b夾雜在第二阻劑層50與第一阻劑層20的第二夾雜部24之間。 The third non-exposed portion 48b is located between the second exposed portion 48a and the resistor 40. The upper surface 46 of the third non-exposed portion 48b is covered by the second resist layer 50. Therefore, the third non-exposed portion 48b is sandwiched between the second resist layer 50 and the second intervening portion 24 of the first resist layer 20.

第四非露出部48c位於第三非露出部48b與阻抗體40之間。第四非露出部48c之上面46被阻抗體40覆蓋。因此,第四非露出部48c夾雜於阻抗體40與第一阻劑層20的第二夾雜部24之間。 The fourth non-exposed portion 48c is located between the third non-exposed portion 48b and the resistor 40. The upper surface 46 of the fourth non-exposed portion 48c is covered by the resistor 40. Therefore, the fourth non-exposed portion 48c is sandwiched between the resistor 40 and the second sandwiching portion 24 of the first resist layer 20.

此外,在本實施形態中,第二露出部48a的厚度T4較第三非露出部48b的厚度T5更厚的同時,第三非露出部48b的厚度T5較第四非露出部48c的厚度T6亦更厚(T4>T5>T6)。因此,在本實施形態之梳齒圖案45b~45i中,第二露出部48a與第三非露出部48b之間形成有段差的同時,第三非露出部48b與第四非露出部48c之間亦形成有段差。因此,梳齒圖案45b~45i的厚度,隨著往圖中-Y方向而階段性地變薄。 Furthermore, in this embodiment, the thickness T4 of the second exposed portion 48a is greater than the thickness T5 of the third non-exposed portion 48b, while the thickness T5 of the third non-exposed portion 48b is also greater than the thickness T6 of the fourth non-exposed portion 48c ( T4 > T5 > T6 ). Therefore, in the comb-tooth patterns 45b-45i of this embodiment, a step is formed between the second exposed portion 48a and the third non-exposed portion 48b, as well as between the third non-exposed portion 48b and the fourth non-exposed portion 48c. Consequently, the thickness of the comb-tooth patterns 45b-45i gradually decreases in thickness as viewed in the -Y direction in the figure.

另一方面,位於梳齒圖案45的左右端的梳齒圖案45a、45j的剖面 形狀,與梳齒圖案45b~45i的剖面形狀有若干差異。雖無特別圖示,由於阻抗體40為夾雜於梳齒圖案45a、45j與第二阻劑層50之間,故梳齒圖案45a、45j並不存在第四非露出部48c,且第三非露出部48b從第二露出部48a延伸至配線圖案31、35。 Meanwhile, the cross-sectional shapes of tooth patterns 45a and 45j, located at the left and right ends of tooth pattern 45, differ slightly from those of tooth patterns 45b through 45i. Although not specifically illustrated, because the resistor 40 is sandwiched between tooth patterns 45a and 45j and the second resist layer 50, the tooth patterns 45a and 45j lack fourth non-exposed portions 48c. Instead, third non-exposed portions 48b extend from the second exposed portions 48a to the wiring patterns 31 and 35.

第二阻劑層50,與第一阻劑層20相同,係透過使阻劑材料固化(硬化)而形成。作為此阻劑材料,例如能例示出:環氧樹脂、胺甲酸乙酯樹脂、聚酯樹脂、丙烯酸樹脂等樹脂材料。 The second resist layer 50, like the first resist layer 20, is formed by curing (hardening) a resist material. Examples of this resist material include epoxy resins, urethane resins, polyester resins, and acrylic resins.

此第二阻劑層50,如圖2~圖4所示,覆蓋第一阻劑層20的薄化部21、配線圖案31、35、阻抗體40、及梳齒圖案45的第三非露出部48b。第二阻劑層50具有開口51,且包圍第一阻劑層20的突出部22的周圍。 As shown in Figures 2-4 , the second resist layer 50 covers the thinned portion 21 of the first resist layer 20, the wiring patterns 31 and 35, the resistor 40, and the third non-exposed portion 48b of the comb pattern 45. The second resist layer 50 has an opening 51 and surrounds the protruding portion 22 of the first resist layer 20.

如圖7所示,上側膜基板60A,係具備基材61、配線圖案70、及連接體80的配線板。本實施形態之基材61相當於本發明之「第二基材」的一例,本實施形態之配線圖案70相當於本發明之「第二配線圖案」的一例。 As shown in Figure 7, the upper film substrate 60A is a wiring board comprising a base material 61, a wiring pattern 70, and a connector 80. The base material 61 of this embodiment corresponds to an example of the "second base material" of the present invention, and the wiring pattern 70 of this embodiment corresponds to an example of the "second wiring pattern" of the present invention.

基材61,與上述基材11相同,係由具有可撓性及電絶緣性的材料所構成的膜狀部件。構成此基材11的材料,例如能例示出樹脂材料等,更具體而言,能例示出:聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)等。再者,構成基材61的材料,並不限於上述。基材61亦可由金屬材料等具有導電性的材料所形成的板材所構成。在此情形下,這個基材61可兼具連接體80的機能。此外,基材61亦可兼具配線圖案70的機能。再者,即使在基材61係由具有導電性的板材所構成的情形,亦可在這個基材61上形成與此基材不同的連接體80與配線圖案70。 Substrate 61, like substrate 11, is a film-like member made of a flexible and electrically insulating material. Examples of materials constituting substrate 11 include resins, and more specifically, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Furthermore, the materials constituting substrate 61 are not limited to those listed above. Substrate 61 may also be made of a plate material made of a conductive material such as metal. In this case, substrate 61 can also function as connector 80. Furthermore, substrate 61 can also function as wiring pattern 70. Furthermore, even when substrate 61 is made of a conductive plate material, connector 80 and wiring pattern 70 may be formed on substrate 61 separately from the substrate.

配線圖案70,係由將低電阻的導電膠印刷至基材61的下面62並使其硬化而形成。亦即,配線圖案70,係由具有較構成阻抗體40的材料的電阻率更低之電阻率的材料所構成,阻抗體40的電阻值,係以能無視配線圖案70的電 阻值的程度而較配線圖案70的電阻值充分地更高。具體而言,阻抗體40的電阻值係配線圖案70的電阻值的10倍以上,較佳為配線圖案70的電阻值的100倍以上。此外,構成阻抗體40的材料的電阻率,係構成配線圖案70的材料的電阻率的10倍以上,較佳為100倍以上。再者,配線圖案的形成方法,並不限於上述。 Wiring pattern 70 is formed by printing a low-resistance conductive paste onto lower surface 62 of substrate 61 and curing it. Specifically, wiring pattern 70 is made of a material having a lower resistivity than the material constituting resistor 40. The resistance of resistor 40 is sufficiently higher than that of wiring pattern 70 to the extent that the resistance of wiring pattern 70 is negligible. Specifically, the resistance of resistor 40 is at least 10 times, and preferably at least 100 times, the resistance of wiring pattern 70. Furthermore, the resistivity of the material constituting resistor 40 is at least 10 times, and preferably at least 100 times, the resistivity of the material constituting wiring pattern 70. Furthermore, the method for forming the wiring pattern is not limited to the above.

連接體80直接連接至配線圖案70。連接體80具備:第一本體部81及第一保護層82。再者,連接體80亦可不具備第一保護層82。 The connector 80 is directly connected to the wiring pattern 70. The connector 80 includes a first body portion 81 and a first protective layer 82. Furthermore, the connector 80 may not include the first protective layer 82.

第一本體部81設於基材61的下面62。此第一本體部81與上述配線圖案31、35相同,係由印刷低電阻的導電膠並使其硬化而形成。亦即,第一本體部81,係由具有較構成阻抗體40的材料的電阻率更低之電阻率的材料所構成,阻抗體40的電阻值,係以能無視此第一本體部81的電阻值的程度而較這個第一本體部81的電阻值充分地更高。具體而言,阻抗體40的電阻值係第一本體部81的電阻值的10倍以上,較佳為第一本體部81的電阻值的100倍以上。此外,構成阻抗體40的材料的電阻率,係構成第一本體部81的材料的電阻率的10倍以上,較佳為100倍以上。 The first body 81 is provided on the lower surface 62 of the substrate 61. Similar to the wiring patterns 31 and 35 described above, this first body 81 is formed by printing and curing a low-resistance conductive paste. Specifically, the first body 81 is made of a material having a lower resistivity than the material constituting the resistor 40. The resistance of the resistor 40 is sufficiently higher than that of the first body 81 to the extent that the resistance of the first body 81 is negligible. Specifically, the resistance of the resistor 40 is at least 10 times, and preferably at least 100 times, the resistance of the first body 81. Furthermore, the resistivity of the material constituting the resistor 40 is at least 10 times, and preferably at least 100 times, the resistivity of the material constituting the first body 81.

另一方面,第一保護層82係保護第一本體部81的層,並係透過印刷高電阻的導電膠並使其硬化而形成。此第一保護層82為了覆蓋第一本體部81的整體,設在基材61的下面62上。 On the other hand, the first protective layer 82 protects the first main body 81 and is formed by printing and curing a high-resistance conductive adhesive. This first protective layer 82 is provided on the lower surface 62 of the substrate 61 to cover the entire first main body 81.

此連接體80,如圖1所示,在俯視中,為了與下側膜基板10A的梳齒圖案45部分地重疊,設於基材61的下面62。 As shown in FIG1 , this connector 80 is provided on the lower surface 62 of the substrate 61 so as to partially overlap with the comb pattern 45 of the lower film substrate 10A in a plan view.

間隔物90,與上述基材11、61相同,係由具有可撓性及電絶緣性的材料所構成的膜狀部件。作為構成此間隔物90的材料,例如能例示出樹脂材料等,更具體而言,能例示出:聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)等。 Like the aforementioned substrates 11 and 61, spacer 90 is a film-like member made of a flexible and electrically insulating material. Examples of materials for spacer 90 include resins, and more specifically, polyethylene terephthalate (PET) and polyethylene naphthalate (PEN).

如圖1~圖5及圖7所示,此間隔物90具有矩形的平面形狀的開口 91。此開口91較連接體80大,且具有能包含這個連接體80的大小。在本實施形態中,開口91具有不僅限於能包含連接體80、亦能包含梳齒圖案45的大小。隔著間隔物90而積層膜基板10A、60A時,為了包含連接體80及梳齒圖案45,形成此開口91於間隔物90。再者,只要連接體80至少一部位於間隔物90的開口91內就可,連接體80的一部亦可擴展至開口91外,並夾雜於間隔物90與基材61之間。 As shown in Figures 1 to 5 and 7, the spacer 90 has a rectangular opening 91. This opening 91 is larger than the connector 80 and is large enough to contain it. In this embodiment, the opening 91 is not limited to a size sufficient to contain not only the connector 80 but also the tooth pattern 45. When the film substrates 10A and 60A are laminated with the spacer 90 interposed therebetween, the opening 91 is formed in the spacer 90 to contain both the connector 80 and the tooth pattern 45. Furthermore, at least a portion of the connector 80 is sufficient within the opening 91 of the spacer 90; a portion of the connector 80 may extend outside the opening 91 and become sandwiched between the spacer 90 and the substrate 61.

如上所述,膜基板10A、60A隔著間隔物90積層。此時,如圖2~圖5所示,膜基板10A、60A係使上側膜基板60A的基材61的下面62與下側膜基板10A的基材11的上面12對向而積層。此外,下側膜基板10A的基材11與間隔物90藉由接著層(未圖示)而相互貼附的同時,間隔物90與上側膜基板60A的基材61亦藉由接著層(未圖示)而相互貼附。 As described above, the film substrates 10A and 60A are laminated with spacers 90 interposed therebetween. As shown in Figures 2 to 5 , the film substrates 10A and 60A are laminated so that the lower surface 62 of the base 61 of the upper film substrate 60A faces the upper surface 12 of the base 11 of the lower film substrate 10A. Furthermore, while the base 11 of the lower film substrate 10A and the spacers 90 are bonded together via a bonding layer (not shown), the spacers 90 and the base 61 of the upper film substrate 60A are also bonded together via a bonding layer (not shown).

接著,如圖1所示,在俯視中,連接體80及梳齒圖案45包含於開口91內。此外,如圖4所示,在剖視中,連接體80與梳齒圖案45為對向。本實施形態,如圖1所示,在俯視中,連接體80具有不與阻抗體40重疊的非重疊領域NA。 Next, as shown in Figure 1, in a top view, the connector 80 and the comb pattern 45 are contained within the opening 91. Furthermore, as shown in Figure 4, in a cross-sectional view, the connector 80 and the comb pattern 45 face each other. In this embodiment, as shown in Figure 1, in a top view, the connector 80 has a non-overlapping area NA that does not overlap with the resistor 40.

如圖2、圖4、及圖5所示,透過間隔物90,可確保連接體80與梳齒圖案45之間的間隔。如後述,透過按壓滑件100而使上側膜基板60A的基材11變形,並透過此變形,使連接體80與梳齒圖案45接觸而電性連接。 As shown in Figures 2, 4, and 5, spacers 90 ensure a gap between connector 80 and comb-tooth pattern 45. As will be described later, pressing slider 100 deforms base 11 of upper film substrate 60A, and this deformation brings connector 80 into contact with comb-tooth pattern 45, creating an electrical connection.

再者,在本實施形態中,間隔物90的厚度係設定成在非按壓時連接體80與梳齒圖案45不接觸,但並不特別限定於此。間隔物90的厚度,亦可設定為連接體80與梳齒圖案45常態接觸。 Furthermore, in this embodiment, the thickness of the spacer 90 is set so that the connector 80 and the comb pattern 45 do not contact each other when not pressed, but this is not particularly limited to this. The thickness of the spacer 90 can also be set so that the connector 80 and the comb pattern 45 are in normal contact.

再者,本發明之連接體與阻抗體的「電性連接」,係使這個連接體與梳齒圖案之間的電阻值在所定的閾值以下的狀態,故不包含如上述般在非按壓時僅使連接體與梳齒圖案單純接觸的狀態。 Furthermore, the "electrical connection" between the connector and the resistor in the present invention refers to a state in which the resistance between the connector and the comb pattern is below a predetermined threshold. Therefore, it does not include the state described above where the connector and the comb pattern are simply in contact when not pressed.

滑件100,係前端具有半筒形狀的按壓部110的部件,例如係由金屬材料所構成。再者,滑件100的構成,只要是按壓上側膜基板60A的基材61的 上面63的同時能滑動的構成的話,則不特別限定於上述。此外,在本實施形態中,由於滑件100的按壓對象為上側膜基板60A的基材61的上面63,故滑件100亦可由樹脂材料等具有電性絕緣性的材料所構成。此外,如後述般,亦可取代滑件100而使用操作者的手指。 The slider 100 has a semi-cylindrical pressing portion 110 at its tip and is made of, for example, a metal material. The structure of the slider 100 is not limited to the above, as long as it can slide while pressing the upper surface 63 of the base 61 of the upper film substrate 60A. Furthermore, in this embodiment, since the slider 100 presses the upper surface 63 of the base 61 of the upper film substrate 60A, the slider 100 may be made of an electrically insulating material such as a resin. Furthermore, as described later, the operator's finger may be used in place of the slider 100.

此滑件100在收容可變電阻器1A的框體(未圖示)等保持能移動。接著,透過所定的按壓力按壓部110而使上側膜基板60A的基材61的上面63為按壓狀態,滑件100能在一定地維持這個按壓力的同時沿著圖中X方向(連接體80的延伸方向(長邊方向))來回運動。在本實施形態中,如圖1所示,此滑件100能滑動的滑動領域SA,在俯視中,包含於上述連接體80的非重疊領域NA,並不與阻抗體40重疊。接著,連接體80的全域成為非重疊領域NA。滑件100能在此滑動領域SA中沿著圖中X方向來回移動。本實施形態之滑動領域SA,相當於本發明之「滑動領域」的一例。 This slider 100 is kept movable in a frame (not shown) that houses the variable resistor 1A. Then, by applying a predetermined pressure to the pressing portion 110, the upper surface 63 of the base material 61 of the upper film substrate 60A is pressed, and the slider 100 can move back and forth along the X direction in the figure (the extension direction (long side direction) of the connector 80) while maintaining this pressure to a certain extent. In this embodiment, as shown in FIG1 , the sliding area SA in which this slider 100 can slide is included in the non-overlapping area NA of the connector 80 in a top view and does not overlap with the resistor 40. Then, the entire area of the connector 80 becomes the non-overlapping area NA. The slider 100 can move back and forth along the X direction in the figure in this sliding area SA. The sliding area SA of this embodiment is equivalent to an example of the "sliding area" of the present invention.

如圖2所示,透過按壓滑件100,上側膜基板60A的基材61會撓曲至下方,並使梳齒圖案45接觸連接體80。因此,可藉由連接體80使阻抗體40與配線圖案70電性連接。具體而言,在圖2所示的狀態下,梳齒圖案45a~45j中的梳齒圖案45f與連接體80電性連接。 As shown in Figure 2, pressing slider 100 causes base 61 of upper film substrate 60A to bend downward, bringing comb-tooth pattern 45 into contact with connector 80. Consequently, connector 80 electrically connects resistor 40 to wiring pattern 70. Specifically, in the state shown in Figure 2, comb-tooth pattern 45f among comb-tooth patterns 45a-45j is electrically connected to connector 80.

再者,透過按壓滑件100,與連接體80同時連接的梳齒圖案45a~45j的數量亦可為複數。 Furthermore, by pressing the slider 100, the number of comb patterns 45a-45j connected to the connecting body 80 at the same time can also be multiple.

接著,在本實施形態中,透過使滑件100在按壓上側膜基板60A的同時滑動,透過連接體80連接的梳齒圖案45會依序變化,從而使阻抗體40的電阻長(電阻值)為可變。 Next, in this embodiment, by sliding the slider 100 while pressing the upper film substrate 60A, the comb pattern 45 connected by the connector 80 changes sequentially, thereby making the resistance length (resistance value) of the resistor 40 variable.

例如,在如圖2所示的狀態下,如上所述,梳齒圖案45f藉由連接體80連接。自此狀態,隨著滑件100在圖中+X方向滑動,藉由連接體80連接的梳齒圖案45,會變化為:梳齒圖案45f→梳齒圖案45g→梳齒圖案45h→梳齒圖案45i →梳齒圖案45j。 For example, in the state shown in Figure 2 , as described above, tooth pattern 45f is connected via connector 80 . From this state, as slider 100 slides in the +X direction in the figure, the tooth pattern 45 connected via connector 80 changes: tooth pattern 45f → tooth pattern 45g → tooth pattern 45h → tooth pattern 45i → tooth pattern 45j.

伴隨於此,連接連接體80的配線圖案70,會檢出因應藉由連接體80而連接之梳齒圖案45的電壓(檢出電壓)。亦即,因應滑件100的按壓位置,配線圖案31、70之間的電阻值會變化。滑件100在圖中+X方向滑動時,配線圖案31、70間的電阻值會伴隨著滑件100的滑動而漸漸地上升。將此可變電阻器1A的配線圖案31、70連接至萬用電表等,這個萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差。 In response to this, the wiring pattern 70 connected to the connector 80 detects the voltage (detection voltage) corresponding to the comb pattern 45 connected via the connector 80. In other words, the resistance between the wiring patterns 31 and 70 changes depending on the pressed position of the slider 100. As the slider 100 slides in the +X direction in the figure, the resistance between the wiring patterns 31 and 70 gradually increases as the slider 100 slides. Connecting the wiring patterns 31 and 70 of this variable resistor 1A to a multimeter or other device will output the potential difference between the power supply voltage and the detection voltage of the wiring pattern 70.

另一方面,如圖2所示之狀態中,滑件100在圖中-X方向滑動時,依循這個滑件100的滑動,藉由連接體80連接的梳齒圖案的組合,會變化為:梳齒圖案45f→梳齒圖案45e→梳齒圖案45d→梳齒圖案45c→梳齒圖案45b→梳齒圖案45a。在此情形下,配線圖案31、70之間的電阻值,會伴隨著滑件100的滑動而漸漸地下降。 On the other hand, as shown in Figure 2, when slider 100 slides in the -X direction, the combination of comb patterns connected by connector 80 changes as slider 100 slides: comb pattern 45f → comb pattern 45e → comb pattern 45d → comb pattern 45c → comb pattern 45b → comb pattern 45a. In this case, the resistance between wiring patterns 31 and 70 gradually decreases as slider 100 slides.

例如,在圖2中的左端的梳齒圖案45a藉由連接體80電性連接至配線圖案70的情形下,配線圖案70會檢出與電源電壓幾乎同電位的電壓,萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差(例如為0〔V〕)。 For example, when the comb pattern 45a on the left end of Figure 2 is electrically connected to the wiring pattern 70 via the connector 80, the wiring pattern 70 will detect a voltage that is substantially equal to the power supply voltage. A multimeter or the like will output the potential difference between the power supply voltage and the voltage detected by the wiring pattern 70 (e.g., 0 [V]).

與此相對,在略中間的梳齒圖案45f藉由連接體80電性連接至配線圖案70的情形下,配線圖案70會檢出電源電壓的約略一半電位的電壓,萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差(例如為2.5〔V〕)。 In contrast, when the comb pattern 45f in the middle is electrically connected to the wiring pattern 70 via the connector 80, the wiring pattern 70 will detect a voltage approximately half the power supply voltage, and a multimeter or the like will output the potential difference between the power supply voltage and the voltage detected by the wiring pattern 70 (e.g., 2.5V).

此外,在圖2中的右端的梳齒圖案45j藉由連接體80電性連接至配線圖案70的情形下,配線圖案70會檢出與地面幾乎同電位的電壓,萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差(例如為5〔V〕)。 Furthermore, when the comb pattern 45j on the right end of Figure 2 is electrically connected to the wiring pattern 70 via connector 80, the wiring pattern 70 will detect a voltage that is approximately the same as the ground potential. A multimeter or the like will output the potential difference between the power supply voltage and the voltage detected by the wiring pattern 70 (e.g., 5 [V]).

如此,在本實施形態中,由於配線圖案31、70之間的電阻值會因應藉由連接體80連接之梳齒圖案45而變化,故可變電阻器1A的輸出成為階段狀。因此,梳齒圖案45的根數越多,這個梳齒圖案45的節距(pitch)就越窄, 故能提升可變電阻器1A輸出的解析能力(解析度)。 In this manner, in this embodiment, the resistance between wiring patterns 31 and 70 changes according to the comb pattern 45 connected by connector 80, resulting in a step-like output from variable resistor 1A. Consequently, increasing the number of comb patterns 45 results in a narrower pitch, thereby improving the resolution of the output from variable resistor 1A.

如上所述,在本實施形態中,由於第一阻劑層20的第一夾雜部23埋入梳齒圖案45a~45j彼此之間的空間,故能減少連接體80的梳齒圖案45a~45j的側面的接觸。因此,能抑制梳齒圖案45a~45j的磨削、因源自橫向的力使梳齒圖案45a~45j倒下並使其從下側膜基板剥離,從而能抑制梳齒圖案45a~45j的劣化。 As described above, in this embodiment, the first intervening portion 23 of the first resist layer 20 is embedded in the spaces between the tooth patterns 45a-45j, thereby reducing contact with the side surfaces of the tooth patterns 45a-45j of the connector 80. This prevents the tooth patterns 45a-45j from being worn away, or from being toppled and separated from the underlying film substrate by lateral forces, thereby suppressing degradation of the tooth patterns 45a-45j.

此外,由於位於梳齒圖案45中左右端的梳齒圖案45a、45j能透過第一夾雜部23加上第三夾雜部25而受到保護,故能抑制梳齒圖案45a,45j的劣化。 Furthermore, since the comb patterns 45a and 45j located at the left and right ends of the comb pattern 45 are protected by the first and third clamping portions 23 and 25, degradation of the comb patterns 45a and 45j can be suppressed.

此外,在上述先前技術中,連接體與梳齒圖案的上面接觸時的上側膜基板及連接體的撓曲量,以及連接體進入梳齒圖案彼此之間空間時的上側膜基板及連接體的撓曲量,會產生差異。因此,滑件會不管滑動方向而亦可於上下方向移動,而有連接體與梳齒圖案之間的導通接觸不安定的情形。這樣的情形,會產生可變電阻器的檢出精確度(例如,相對於滑件的位置之可變電阻器的輸出值的線性精確度)惡化的問題。 Furthermore, in the aforementioned prior art, there are differences in the amount of deflection of the upper film substrate and connector when the connector contacts the top surface of the comb pattern, and when the connector enters the space between the comb patterns. Consequently, the slider can move vertically regardless of the sliding direction, potentially causing unstable electrical contact between the connector and the comb pattern. This degrades the detection accuracy of the variable resistor (for example, the linear accuracy of the variable resistor's output value relative to the slider's position).

與此相對,在本實施形態中,滑件100在對應梳齒圖案45彼此之間的空間的位置移動時,往梳齒圖案45彼此之間的空間之連接體80的下方向(圖中的-Z方向)的移動,能透過第一夾雜部23及第三夾雜部25而減少,故能抑制滑件100往下方向的移動,從而能抑制可變電阻器的檢出精確度的惡化。 In contrast, in this embodiment, when the slider 100 moves to a position corresponding to the space between the tooth patterns 45, movement of the connector 80 downward (in the -Z direction in the figure) within the space between the tooth patterns 45 is reduced by the first and third clamping portions 23 and 25. This suppresses downward movement of the slider 100, thereby minimizing degradation in the detection accuracy of the variable resistor.

此外,在本實施形態中,由於梳齒圖案45的上面46的高度H3與第一及第三夾雜部23、25之上面22a的高度H2為實質地相同,能使滑件100幾乎無法在上下方向移動而滑動,從而能抑制可變電阻器的檢出精確度的惡化。 Furthermore, in this embodiment, since the height H3 of the upper surface 46 of the comb pattern 45 is substantially the same as the height H2 of the upper surfaces 22a of the first and third sandwiching portions 23 and 25, the slider 100 can be made almost unable to slide in the vertical direction, thereby suppressing the deterioration of the detection accuracy of the variable resistor.

進一步,在本實施形態中,由於梳齒圖案45的上面46與第一及第三夾雜部23、25之上面22a為實質地平行,能使滑件100幾乎無法在上下方向移動而滑動,從而能抑制可變電阻器的檢出精確度的惡化。 Furthermore, in this embodiment, because the upper surface 46 of the comb pattern 45 is substantially parallel to the upper surfaces 22a of the first and third sandwiching portions 23 and 25, the slider 100 is virtually unable to move vertically and slide, thereby suppressing degradation of the variable resistor's detection accuracy.

接著,將針對上述第一實施形態之可變電阻器1A的製造方法, 邊參照圖邊說明。圖8(A)~圖9(D)為顯示第一實施形態之可變電阻器1A的製造方法的一例的剖面圖。圖8(A)~圖8(D)的上圖為對應沿著圖1之II-II線的剖面的剖面圖、圖8(A)~圖8(D)的下圖為對應沿著圖1之III-III線的剖面的剖面圖。相同地,圖9(A)~圖9(D)的上圖為對應沿著圖1之II-II線的剖面的剖面圖、圖9(A)~圖9(D)的下圖為對應沿著圖1之III-III線的剖面的剖面圖。 Next, the manufacturing method of the variable resistor 1A according to the first embodiment will be described with reference to the figures. Figures 8(A) to 9(D) are cross-sectional views illustrating an example of the manufacturing method of the variable resistor 1A according to the first embodiment. The upper figures of Figures 8(A) to 8(D) correspond to the cross-sectional views taken along line II-II in Figure 1, and the lower figures of Figures 8(A) to 8(D) correspond to the cross-sectional views taken along line III-III in Figure 1. Similarly, the upper figures of Figures 9(A) to 9(D) correspond to the cross-sectional views taken along line II-II in Figure 1, and the lower figures of Figures 9(A) to 9(D) correspond to the cross-sectional views taken along line III-III in Figure 1.

首先,如圖8(A)所示,準備離型膜200。本實施形態之離型膜200,具備:膜201以及設於膜201一側的主面的離型層202。膜201係由樹脂材料所構成。作為此樹脂材料,例如能例示出PET等。離型層202係透過將離型劑塗佈至膜201而形成。作為此離型劑,例如能例示出矽酮系離型劑、氟系離型劑等。本實施形態之離型膜200相當於本發明之「支持體」的一例,本實施形態之離型層202相當於本發明之「離型處理面」的一例。 First, as shown in Figure 8(A), a release film 200 is prepared. The release film 200 of this embodiment comprises a film 201 and a release layer 202 disposed on one main surface of the film 201. The film 201 is made of a resin material. Examples of this resin material include PET. The release layer 202 is formed by applying a release agent to the film 201. Examples of this release agent include silicone-based release agents and fluorine-based release agents. The release film 200 of this embodiment serves as an example of the "support" of the present invention, and the release layer 202 of this embodiment serves as an example of the "release treatment surface" of the present invention.

透過將阻劑材料印刷至此離型膜200的離型層202並使其固化(硬化),可形成第二阻劑層50。此時,如圖8(A)的上圖所示,形成開口51的領域未塗佈阻劑材料。因此,能形成具有開口51的第二阻劑層50。 By printing a resist material onto the release layer 202 of the release film 200 and curing (hardening) the material, a second resist layer 50 is formed. At this point, as shown in the upper image of FIG8(A), the area where the opening 51 is to be formed is not coated with the resist material. Thus, a second resist layer 50 having the opening 51 is formed.

再者,作為阻劑材料的印刷方法,可使用接觸塗佈法或非接觸塗佈法中的任一者。作為接觸塗佈法的具體範例,能例示出:網版印刷、凹版印刷、平版印刷、凹版轉印印刷(gravure offset printing)、彈性印刷等。另一方面,作為非接觸塗佈法的具體範例,能例示出:噴墨印刷、噴霧塗佈法(spray coating)、分配塗佈法(dispense coating)、噴射分配塗佈法(jet dispense coating)等。此外,作為使阻劑材料硬化的熱源並無特別限定,但能例示出:電熱爐、紅外線爐、遠紅外線(IR)爐、近紅外線(NIR)爐、雷射照射裝置等,亦可組合上述而進行熱處理。 Furthermore, the resist material can be printed using either contact coating or non-contact coating. Specific examples of contact coating include screen printing, gravure printing, lithographic printing, gravure offset printing, and elastic printing. On the other hand, specific examples of non-contact coating include inkjet printing, spray coating, dispense coating, and jet dispense coating. The heat source for curing the resist material is not particularly limited, but examples thereof include electric furnaces, infrared furnaces, far infrared (IR) furnaces, near infrared (NIR) furnaces, and laser irradiation devices. Heat treatment may also be performed using a combination of these.

接著,如圖8(B)的下圖所示,透過在第二阻劑層50上印刷高電阻的導電膠並使其固化(硬化),形成阻抗體40。作為高電阻的導電膠,能 使用上述導電膠。作為高電阻的導電膠的印刷方法及固化方法雖無特別限定,但能例示出與上述第二阻劑層50的印刷方法及固化方法相同者。 Next, as shown in the lower diagram of Figure 8(B), a high-resistance conductive paste is printed on the second resist layer 50 and cured (hardened) to form the resistor 40. The high-resistance conductive paste described above can be used. While not particularly limited, the printing and curing methods for the high-resistance conductive paste are similar to those used for the second resist layer 50 described above.

接著,如圖8(C)所示,透過從開口51的內部橫跨阻抗體40印刷低電阻的導電膠並使其固化(硬化),形成梳齒圖案45。作為低電阻的導電膠,能使用上述導電膠。作為低電阻的導電膠的印刷方法及固化方法雖無特別限定,但能例示出與上述第二阻劑層50的印刷方法及固化方法相同者。 Next, as shown in Figure 8(C), a low-resistance conductive paste is printed from inside opening 51 across resistor 40 and cured (hardened) to form a comb pattern 45. The low-resistance conductive paste described above can be used. While not particularly limited, the printing and curing methods for the low-resistance conductive paste are similar to those used for the second resist layer 50 described above.

接著,如圖8(D)所示,透過在阻抗體40的兩端印刷低電阻的導電膠,以形成配線圖案31、35。作為低電阻的導電膠,能使用上述導電膠。作為低電阻的導電膠的印刷方法及固化方法雖無特別限定,但能例示出與上述第二阻劑層50的印刷方法及固化方法相同者。 Next, as shown in Figure 8(D), a low-resistance conductive paste is printed on both ends of resistor 40 to form wiring patterns 31 and 35. The low-resistance conductive paste described above can be used. While not particularly limited, the printing and curing methods for the low-resistance conductive paste are similar to those used for the second resist layer 50 described above.

再者,圖8(C)的梳齒圖案45的形成步驟與圖8(D)的配線圖案31、35的形成步驟的順序亦可相反。或者,兩步驟亦可在同一步驟中進行。 Furthermore, the order of forming the comb pattern 45 in FIG8(C) and the order of forming the wiring patterns 31 and 35 in FIG8(D) may be reversed. Alternatively, both steps may be performed in the same step.

接著,如圖9(A)所示,為了覆蓋配線圖案31、35、阻抗體40、梳齒圖案45、及第二阻劑層50,透過在離型膜200上印刷阻劑材料並使其固化(硬化),以形成第一阻劑層20。作為阻劑材料,能例示出使用與構成上述第二阻劑層50的阻劑材料相同者。作為阻劑材料的印刷方法及固化方法雖無特別限定,但能例示出與上述第二阻劑層50的印刷方法及固化方法相同者。 Next, as shown in Figure 9(A), a resist material is printed on release film 200 and cured (hardened) to form first resist layer 20, covering wiring patterns 31 and 35, resistor 40, comb pattern 45, and second resist layer 50. The resist material can be the same as that used to form second resist layer 50. The printing and curing methods for the resist material are not particularly limited, but can be the same as those used to form second resist layer 50.

此時,透過將阻劑材料填充至梳齒圖案45彼此之間的空間以及第二阻劑層50與梳齒圖案45之間的空間的狀態下使其固化,以形成埋入梳齒圖案45彼此之間的空間的第一夾雜部23以及埋入第二阻劑層50與梳齒圖案45之間的空間的第三夾雜部25。此外,透過使阻劑材料為了覆蓋梳齒圖案45而印刷並使其固化,會形成上述第二夾雜部24。 At this point, the resist material is filled into the spaces between the tooth patterns 45 and between the second resist layer 50 and the tooth pattern 45 and then cured. This forms the first intervening portion 23 embedded in the spaces between the tooth patterns 45 and the third intervening portion 25 embedded in the spaces between the second resist layer 50 and the tooth pattern 45. Furthermore, the resist material is printed to cover the tooth pattern 45 and cured, forming the second intervening portion 24.

接著,如圖9(B)所示,將基材11貼附至第一阻劑層20。如上所述,作為基材11,例如能使用具有黏著層(未圖示)的黏著膠帶,基材11並 藉由這個黏著層而貼附第一阻劑層20。 Next, as shown in Figure 9(B), substrate 11 is attached to first resist layer 20. As described above, substrate 11 can be made of, for example, an adhesive tape having an adhesive layer (not shown), and substrate 11 is attached to first resist layer 20 via this adhesive layer.

接著,如圖9(C)所示,將離型膜200剝離。如此,可完成上述的下側膜基板10A。也就是說,本實施形態之可變電阻器1A的製造方法,係透過在離型膜200上製造第一及第二阻劑層20、50、配線圖案31、35、阻抗體40、及梳齒圖案45後轉印至基材11,以製作下側膜基板10A。 Next, as shown in Figure 9(C), the release film 200 is peeled off. This completes the lower film substrate 10A described above. Specifically, the method for manufacturing the variable resistor 1A of this embodiment forms the first and second resistor layers 20, 50, wiring patterns 31, 35, resistor 40, and comb pattern 45 on the release film 200, then transfers them to the substrate 11 to produce the lower film substrate 10A.

只要這樣製作下側膜基板10A的話,由於係在離型膜200直接地形成梳齒圖案45與第一阻劑層20再轉印,而能使梳齒圖案45的上面46,容易地從埋設此梳齒圖案45的第一阻劑層20的突出部22露出。例如,若在基材上形成梳齒圖案後形成第一阻劑層的話,阻劑材料不慎附著至梳齒圖案的上面的可能性高,故難以使梳齒圖案的上面露出。 When the lower film substrate 10A is manufactured in this manner, the comb pattern 45 and the first resist layer 20 are directly formed on the release film 200 and then transferred. This allows the upper surface 46 of the comb pattern 45 to be easily exposed through the protrusion 22 of the first resist layer 20, which embeds the comb pattern 45. For example, if the first resist layer is formed after forming the comb pattern on the substrate, there is a high probability that the resist material will inadvertently adhere to the upper surface of the comb pattern, making it difficult to expose the upper surface of the comb pattern.

此外,梳齒圖案45的上面46、埋設此梳齒圖案45的第一阻劑層20的突出部22的上面22a、以及第二阻劑層50的上面50a,係形成在離型膜200的同一主面上,故能將上面46、22a、50a容易地形成一面。 Furthermore, the upper surface 46 of the tooth pattern 45, the upper surface 22a of the protrusion 22 of the first resist layer 20 in which the tooth pattern 45 is embedded, and the upper surface 50a of the second resist layer 50 are formed on the same main surface of the release film 200. This allows the upper surfaces 46, 22a, and 50a to be easily formed on the same surface.

此外,由於能將平滑性高的離型膜200的表面形狀轉印至上面46、22a、50a,故能平滑地形成上面46、22a、50a。例如,能使上面46、22a、50a的表面粗糙度Ra為0.01μm~0.1μm。 Furthermore, since the surface shape of the highly smooth release film 200 can be transferred to the upper surfaces 46, 22a, and 50a, the upper surfaces 46, 22a, and 50a can be formed smoothly. For example, the surface roughness Ra of the upper surfaces 46, 22a, and 50a can be made between 0.01 μm and 0.1 μm.

接著,如圖9(D)所示,藉由間隔物90將上側膜基板60A貼附至下側膜基板10A。再者,下側膜基板10A的配線圖案70及連接體80如上所述係透過在基材61的下面62印刷而形成。如上所述,可製造可變電阻器1A。 Next, as shown in FIG9(D), the upper film substrate 60A is attached to the lower film substrate 10A via spacers 90. Furthermore, the wiring pattern 70 and connectors 80 of the lower film substrate 10A are formed by printing on the lower surface 62 of the substrate 61 as described above. As described above, the variable resistor 1A is manufactured.

再者,本實施形態雖然在離型膜200上形成下側膜基板10A的第一阻劑層20、配線圖案31,35、阻抗體40、梳齒圖案45、及第二阻劑層50再轉印,但並不限定於此。至少,亦可在離型膜200上形成第一阻劑層20與梳齒圖案45並轉印至基材11上之後,在基材11上形成配線圖案31、35、阻抗體40、及第二阻劑層50。 Furthermore, although this embodiment forms the first resist layer 20, wiring patterns 31, 35, resistor 40, comb pattern 45, and second resist layer 50 of the lower film substrate 10A on the release film 200 and then transfers them, this is not limiting. Alternatively, the first resist layer 20 and comb pattern 45 may be formed on the release film 200 and then transferred to the substrate 11, followed by forming the wiring patterns 31, 35, resistor 40, and second resist layer 50 on the substrate 11.

<<第二實施形態>> <<Second Implementation Form>>

圖10為顯示第二實施形態之可變電阻器1B的俯視圖,圖11為沿著圖10之XI-XI線的剖面圖。圖12為顯示第二實施形態之可變電阻器1B的下側膜基板10B的俯視圖。圖13為顯示第二實施形態之可變電阻器1B的間隔物90及上側膜基板60B的底面圖。 Figure 10 is a top view of a variable resistor 1B according to the second embodiment, and Figure 11 is a cross-sectional view taken along line XI-XI in Figure 10 . Figure 12 is a top view of the lower film substrate 10B of the variable resistor 1B according to the second embodiment. Figure 13 is a bottom view of the spacer 90 and upper film substrate 60B of the variable resistor 1B according to the second embodiment.

本實施形態之可變電阻器1B,如圖10~圖13所示,相較於第一實施形態之可變電阻器1A,在配線圖案70形成在下側膜基板10B而非上側膜基板60B這點,與第一實施形態的可變電阻器1A相異。但是,除此之外的構成與第一實施形態相同。以下將僅就第二實施形態之可變電阻器1B與第一實施形態的相異點進行說明,與第一實施形態相同的構成將附加同一符號並省略其說明。 As shown in Figures 10 to 13 , the variable resistor 1B of this embodiment differs from the variable resistor 1A of the first embodiment in that the wiring pattern 70 is formed on the lower film substrate 10B rather than the upper film substrate 60B. However, the remaining configuration is the same as that of the first embodiment. The following description will focus solely on the differences between the variable resistor 1B of the second embodiment and the first embodiment. Components identical to those of the first embodiment are designated by the same reference numerals, and their description will be omitted.

如圖11所示,本實施形態的配線圖案70,藉由第一阻劑層20形成在基材11上。此配線圖案70具備第二本體部71以及第二保護層72。 As shown in FIG11 , the wiring pattern 70 of this embodiment is formed on the substrate 11 via the first resist layer 20 . This wiring pattern 70 includes a second main portion 71 and a second protective layer 72 .

第二本體部71,與上述配線圖案31、35相同,係透過印刷低電阻的導電膠並使其固化(硬化)而形成。更具體而言,在圖8(C)所示之步驟中,第二本體部71,能透過在第二阻劑層50的開口51的內側形成的第二保護層72上印刷低電阻的導電膠並使其硬化而形成。 The second main portion 71, similar to the wiring patterns 31 and 35 described above, is formed by printing and curing a low-resistance conductive adhesive. More specifically, in the step shown in Figure 8(C), the second main portion 71 can be formed by printing and curing a low-resistance conductive adhesive on the second protective layer 72 formed inside the opening 51 of the second resist layer 50.

第二本體部71,係由具有構成阻抗體40的材料的電阻率更低之電阻率的材料所構成,阻抗體40的電阻值,係以能無視此第二本體部71的電阻值的程度而較第二本體部71的電阻值充分地更高。具體而言,阻抗體40的電阻值係第二本體部71的電阻值的10倍以上,較佳為第二本體部71的電阻值的100倍以上。此外,構成阻抗體40的材料的電阻率,係構成第二本體部71的材料的電阻率的10倍以上,較佳為100倍以上。 The second body 71 is made of a material having a lower resistivity than the material forming the resistor 40. The resistance of the resistor 40 is sufficiently higher than that of the second body 71 to the extent that the resistance of the second body 71 is negligible. Specifically, the resistance of the resistor 40 is at least 10 times, and preferably at least 100 times, the resistance of the second body 71. Furthermore, the resistivity of the material forming the resistor 40 is at least 10 times, and preferably at least 100 times, the resistivity of the material forming the second body 71.

如圖12所示,此第二本體部71沿著圖中X方向延伸。第二本體部71的端部,具有與阻抗體40實質上平行地延伸的平行部711。再者、此第二本體 部71的平面形狀,並無特別限定於上述。 As shown in Figure 12, the second body portion 71 extends along the X direction in the figure. The end of the second body portion 71 has a parallel portion 711 extending substantially parallel to the resistor 40. The planar shape of the second body portion 71 is not particularly limited to that described above.

配線圖案70的第二保護層72,覆蓋第二本體部71的平行部711。此第二保護層72係保護第二本體部71的平行部711的層,其係透過印刷具有較上述低電阻的導電膠更高電阻值的高電阻導電膠並使其硬化而形成。例如,此第二保護層72,在圖8(B)所示之步驟中,能透過在第二阻劑層50的開口51的內側印刷高電阻的導電膠並使其硬化而形成。 The second protective layer 72 of the wiring pattern 70 covers the parallel portion 711 of the second main body 71. This second protective layer 72 protects the parallel portion 711 of the second main body 71 and is formed by printing and curing a high-resistance conductive glue having a higher resistance than the low-resistance conductive glue described above. For example, this second protective layer 72 can be formed by printing and curing a high-resistance conductive glue inside the opening 51 of the second resist layer 50 in the step shown in FIG8(B).

作為這樣高電阻的導電膠的具體範例,雖無特別限定,但例如能例示出碳膠。此第二保護層72,具有阻抗體40沿著圖中X方向的長度相同程度的長度,阻抗體40及梳齒圖案45空著所定的間隔而配置。亦即,此配線圖案70的第二保護層72與阻抗體40實質上平行地配置的同時,亦與梳齒圖案45的排列方向實質上平行地配置。再者,配線圖案70亦可不具備第二保護層72。 As a specific example of such a high-resistance conductive paste, carbon glue can be exemplified, though not particularly limited. The second protective layer 72 has a length approximately equal to the length of the resistor 40 along the X direction in the figure, and the resistor 40 and the comb pattern 45 are arranged with a predetermined spacing. In other words, the second protective layer 72 of the wiring pattern 70 is arranged substantially parallel to the resistor 40 and also substantially parallel to the arrangement direction of the comb pattern 45. Furthermore, the wiring pattern 70 does not necessarily need to have the second protective layer 72.

另一方面,如圖10、圖11、及圖13所示,本實施形態的連接體80,並未如第一實施形態般連接配線圖案70。在本實施形態中,連接體80較第一實施形態的連接體80具有更寬廣的矩形狀的平面形狀。接著,在俯視中,此連接體80,在這個連接體80的一側的緣部(沿著圖中X方向的-Y側的緣部)80a與梳齒圖案45重疊的同時,亦使這個連接體80的另一側的緣部(沿著圖中X方向+Y側的緣部)80b與配線圖案70重疊般,設於基材61的下面62。 On the other hand, as shown in Figures 10, 11, and 13, the connector 80 of this embodiment is not connected to the wiring pattern 70 as in the first embodiment. In this embodiment, the connector 80 has a wider rectangular planar shape than the connector 80 of the first embodiment. Furthermore, in a top view, the connector 80 is positioned on the lower surface 62 of the substrate 61 so that the edge 80a on one side of the connector 80 (the edge on the -Y side along the X direction in the figure) overlaps with the comb pattern 45, while the edge 80b on the other side of the connector 80 (the edge on the +Y side along the X direction in the figure) overlaps with the wiring pattern 70.

如圖11所示,本實施形態之可變電阻器1B,透過按壓滑件100,而在上側膜基板60B的基材61下方撓曲,且透過使連接體80與梳齒圖案45各自接觸配線圖案70,而藉由連接體80與阻抗體40及配線圖案70電性連接。接著,透過使滑件100在按壓上側膜基板60B的同時沿著X方向滑動,而變化連接體80與阻抗體40的連接位置,從而使阻抗體40的電阻長(電阻值)為可變。 As shown in Figure 11, the variable resistor 1B of this embodiment is bent beneath the base 61 of the upper film substrate 60B by pressing the slider 100. The connector 80 and the comb pattern 45 each contact the wiring pattern 70, electrically connecting the connector 80 to the resistor 40 and the wiring pattern 70. Subsequently, by sliding the slider 100 in the X direction while pressing the upper film substrate 60B, the connection position between the connector 80 and the resistor 40 is changed, thereby making the resistor 40's resistance length (resistance value) variable.

具體而言,如上所述,相對於與阻抗體40連接的一側的配線圖案31施加電源電壓(例如為5〔V〕),連接這個阻抗體40另一側的配線圖案35為 接地。此外,透過滑件100的按壓而藉由連接體80使配線圖案70與阻抗體40常態地電性連接,這個配線圖案70與阻抗體40在圖中X方向的任意位置電性連接。因此,此配線圖案70會因應滑件100的按壓位置而檢出電壓(檢出電壓)。亦即,在本實施形態中,因應滑件100的按壓位置,配線圖案31、70之間的電阻值會變化。接著,萬用電表(未圖示)等連接至此可變電阻器1B的配線圖案31、70,而輸出電源電壓與配線圖案70的檢出電壓的電位差。 Specifically, as described above, a power supply voltage (e.g., 5V) is applied to the wiring pattern 31 on one side connected to the resistor 40, while the wiring pattern 35 on the other side connected to the resistor 40 is grounded. Furthermore, when the slider 100 is pressed, the wiring pattern 70 is electrically connected to the resistor 40 via the connector 80. This wiring pattern 70 is electrically connected to the resistor 40 at any position in the X direction in the figure. Therefore, the wiring pattern 70 detects a voltage (detection voltage) depending on the position of the slider 100. In other words, in this embodiment, the resistance between the wiring patterns 31 and 70 varies depending on the position of the slider 100. Next, a multimeter (not shown) or the like is connected to the wiring patterns 31 and 70 of the variable resistor 1B, and outputs the potential difference between the power supply voltage and the detection voltage of the wiring pattern 70.

例如,在滑動領域SA內之滑件100位於圖10中的左端的情形下,由於阻抗體40之連接體80的連接位置亦位於左端,故配線圖案70會檢出與電源電壓幾乎同電位的電壓,而透過萬用電表會輸出電源電壓與配線圖案70的檢出電壓的電位差(例如為0〔V〕)。 For example, when the slider 100 within the sliding area SA is located at the left end in Figure 10 , since the connection position of the connector 80 of the resistor 40 is also at the left end, the wiring pattern 70 will detect a voltage that is almost the same as the power supply voltage. The multimeter will output the potential difference between the power supply voltage and the voltage detected by the wiring pattern 70 (e.g., 0 [V]).

與此相對,如圖10所示,在滑動領域SA內之滑件100位於略中央的情形下,由於阻抗體40之連接體80的連接位置亦位於略中央,故配線圖案70會檢出電源電壓的約略一半的電位的電壓,而透過萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差(例如為2.5〔V〕)。 In contrast, as shown in Figure 10 , when the slider 100 is located approximately in the center of the sliding area SA, the connection position of the connector 80 of the resistor 40 is also approximately in the center. Therefore, the wiring pattern 70 detects a voltage approximately half the power supply voltage. A multimeter or the like outputs the potential difference between the power supply voltage and the voltage detected by the wiring pattern 70 (e.g., 2.5 V).

此外,在滑動領域SA內之滑件100位於圖中右端的情形下,由於阻抗體40之連接體80的連接位置亦位於右端,故配線圖案70會檢出與地面幾乎同電位的電壓,而透過萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差(例如為5〔V〕)。 Furthermore, when the slider 100 is located at the right end of the diagram within the sliding area SA, since the connection position of the connector 80 of the resistor 40 is also at the right end, the wiring pattern 70 will detect a voltage that is almost the same as the ground. A multimeter or the like will output the potential difference between the power supply voltage and the voltage detected by the wiring pattern 70 (e.g., 5 V).

在此第二實施形態中,亦由於第一夾雜部23埋入梳齒圖案45彼此之間的空間,故與上述第一實施形態相同而能在抑制梳齒圖案45的劣化的同時,能抑制可變電阻器1B的檢出精確度的惡化。 In this second embodiment, the first intervening portion 23 is embedded in the space between the comb-tooth patterns 45. Similar to the first embodiment, this can suppress degradation of the comb-tooth pattern 45 while also reducing the deterioration of the detection accuracy of the variable resistor 1B.

<<第三實施形態>> <<Third Implementation Form>>

圖14為顯示第三實施形態之可變電阻器1C的俯視圖,圖15為沿著圖14之XV-XV線的剖面圖。圖16為顯示第三實施形態之可變電阻器1C的下側膜基板 10C的俯視圖。 Figure 14 is a top view of a variable resistor 1C according to the third embodiment, and Figure 15 is a cross-sectional view taken along line XV-XV in Figure 14 . Figure 16 is a top view of the lower film substrate 10C of the variable resistor 1C according to the third embodiment.

本實施形態之可變電阻器1C,如圖14~圖16所示,相較於第二實施形態的可變電阻器1B,具備下列相異點:(1)下側膜基板10C具備梳齒圖案75a~75i及(2)連接體80未與配線圖案70重疊,除此之外的構成皆與第二實施形態相同。以下將僅就第三實施形態之可變電阻器1C說明與第二實施形態的相異點,而與第二實施形態相同之構成則附加同一符號而省略。再者,在本實施形態中,有將複數個梳齒圖案75a~75i統稱為梳齒圖案75的情形。 The variable resistor 1C of this embodiment, as shown in Figures 14 to 16, has the following differences compared to the variable resistor 1B of the second embodiment: (1) the lower film substrate 10C has comb patterns 75a to 75i and (2) the connector 80 does not overlap with the wiring pattern 70. Other than this, the structure is the same as the second embodiment. The following will only describe the differences between the variable resistor 1C of the third embodiment and the second embodiment, and the same symbols are added to the same structure as the second embodiment and omitted. Furthermore, in this embodiment, a plurality of comb patterns 75a to 75i are sometimes collectively referred to as the comb pattern 75.

梳齒圖案75與梳齒圖案45相同,係由印刷低電阻的導電膠並使其硬化而形成。如圖14所示,本實施形態之梳齒圖案75設於阻抗體40與配線圖案70之間。再者,本實施形態之梳齒圖案75相當於本發明之「第二梳齒圖案」的一例。 Comb pattern 75, like comb pattern 45, is formed by printing and curing a low-resistance conductive paste. As shown in Figure 14, comb pattern 75 of this embodiment is positioned between resistor 40 and wiring pattern 70. Furthermore, comb pattern 75 of this embodiment is an example of the "second comb pattern" of the present invention.

此外,如圖16所示,各自的梳齒圖案75a~75i具有線狀的平面形狀,且從配線圖案70的第二本體部71分岐並沿著圖中Y方向延伸。此外,梳齒圖案75a~75i從配線圖案70往阻抗體40突出。亦即,此梳齒圖案75a~75i在連接至配線圖案70的同時,延伸至滑動領域SA的下方。接著,此複數個梳齒圖案75a~75i實質上等間隔地平行排列。 As shown in Figure 16 , each of the comb-tooth patterns 75a-75i has a linear planar shape, diverging from the second main portion 71 of the wiring pattern 70 and extending in the Y direction in the figure. Furthermore, the comb-tooth patterns 75a-75i protrude from the wiring pattern 70 toward the resistor 40. In other words, the comb-tooth patterns 75a-75i, while connected to the wiring pattern 70, extend below the sliding area SA. Furthermore, these multiple comb-tooth patterns 75a-75i are arranged in parallel at substantially equal intervals.

如圖14所示,全部的梳齒圖案45a~45j、75a~75i皆藉由間隔物90的開口91而與連接體80對向,並在俯視中與滑件100的滑動領域SA重疊。此外,如圖14~圖16所示,梳齒圖案45a~45j與梳齒圖案75a~75i在俯視中,沿著圖中X方向相互排列的同時實質上等間隔地配置。 As shown in Figure 14 , all tooth patterns 45a-45j and 75a-75i face the connector 80 via the opening 91 of the spacer 90 and overlap with the sliding area SA of the slider 100 in a plan view. Furthermore, as shown in Figures 14-16 , the tooth patterns 45a-45j and the tooth patterns 75a-75i are arranged along the X direction in the figures in a plan view and are substantially evenly spaced.

再者,梳齒圖案45、75的根數並無特別限定於上述。此外,梳齒圖案45、75的配置亦無特別限定於上述。順帶一提,如後述般,梳齒圖案45、75的根數越多,能使可變電阻器1C的輸出的解析能力(解析度)越高。此外,若可確保梳齒圖案45、75之間的間隔,則梳齒圖案45、75彼此的間隔並不限定 於等間隔。 Furthermore, the number of comb patterns 45 and 75 is not particularly limited to that described above. Furthermore, the arrangement of the comb patterns 45 and 75 is also not particularly limited to that described above. Incidentally, as will be described later, a greater number of comb patterns 45 and 75 can improve the resolution of the output of the variable resistor 1C. Furthermore, as long as the spacing between the comb patterns 45 and 75 can be ensured, the spacing between the comb patterns 45 and 75 is not limited to equal spacing.

本實施形態之第一阻劑層20的第一夾雜部23,具備:埋入梳齒圖案45彼此之間的空間的部分、埋入梳齒圖案75彼此之間的空間的部分、以及埋入梳齒圖案45與梳齒圖案75之間的空間的部分,且這些部分相互連接。因此,第一夾雜部23的平面形狀為在X方向延伸的蛇行形狀。 The first intervening portion 23 of the first resist layer 20 of this embodiment includes a portion embedded in the spaces between the tooth patterns 45, a portion embedded in the spaces between the tooth patterns 75, and a portion embedded in the spaces between the tooth patterns 45 and 75. These portions are interconnected. Therefore, the planar shape of the first intervening portion 23 is a serpentine shape extending in the X-direction.

此外,第三夾雜部25埋入第二阻劑層50與梳齒圖案45a、45j之間的空間的部分,更具備埋入第二阻劑層50與梳齒圖案75a、75i之間的空間的部分。因此,第三夾雜部25的平面形狀為L字形狀。 Furthermore, the third interposing portion 25 is embedded in the space between the second resist layer 50 and the tooth patterns 45a and 45j, and further embedded in the space between the second resist layer 50 and the tooth patterns 75a and 75i. Therefore, the planar shape of the third interposing portion 25 is L-shaped.

如圖14及圖15所示,透過滑件100的按壓,上側膜基板60B的基材61撓曲至下方,連接體80各自接觸至相互相鄰的梳齒圖案45、75。因此,藉由連接體80使阻抗體40與配線圖案70電性連接。具體而言,在如圖15所示的狀態下,梳齒圖案45a~45j中的梳齒圖案45f與梳齒圖案75a~75i中的梳齒圖案75e,藉由連接體80而電性連接。 As shown in Figures 14 and 15 , the pressing action of slider 100 causes base 61 of upper film substrate 60B to bend downward, allowing connectors 80 to contact adjacent tooth patterns 45 and 75. Consequently, connectors 80 electrically connect resistor 40 and wiring pattern 70. Specifically, in the state shown in Figure 15 , tooth pattern 45f among tooth patterns 45a-45j and tooth pattern 75e among tooth patterns 75a-75i are electrically connected via connector 80.

再者,亦可透過滑件100的按壓而使連接體80同時連接之梳齒圖案45a~45j的數量為複數。相同地,亦可透過滑件100的按壓而使連接體80同時連接之梳齒圖案75a~75i的數量為複數。 Furthermore, by pressing the slider 100, the connector 80 can simultaneously connect to multiple comb patterns 45a-45j. Similarly, by pressing the slider 100, the connector 80 can simultaneously connect to multiple comb patterns 75a-75i.

接著,在本實施形態中,透過滑件100而按壓上側膜基板60B的同時滑動,使透過連接體80連接之梳齒圖案45、75的組合依序變化,從而使阻抗體40的電阻長(電阻值)為可變。 Next, in this embodiment, by pressing and sliding the upper film substrate 60B with the slider 100, the combination of the comb patterns 45 and 75 connected by the connector 80 is sequentially changed, thereby making the resistance length (resistance value) of the resistor 40 variable.

例如,在如圖15所示的狀態下,如上述般,梳齒圖案75e,45f藉由連接體80連接。從此狀態而隨著滑件100沿著圖中+X方向滑動,藉由連接體80連接之梳齒圖案的組合,會變化為:梳齒圖案75e、45f→梳齒圖案45f、75f→梳齒圖案75f、45g→梳齒圖案45g、75g→梳齒圖案75g,45h→‧‧‧→梳齒圖案45i、75i→梳齒圖案75i、45j。 For example, in the state shown in Figure 15 , as described above, comb patterns 75e and 45f are connected by connector 80. From this state, as slider 100 slides in the +X direction in the figure, the combination of comb patterns connected by connector 80 changes to: comb patterns 75e, 45f → comb patterns 45f, 75f → comb patterns 75f, 45g → comb patterns 45g, 75g → comb patterns 75g, 45h → ‧‧‧ → comb patterns 45i, 75i → comb patterns 75i, 45j.

伴隨於此,連接梳齒圖案75a~75i之配線圖案70,會檢出因應藉由連接體80連接之梳齒圖案45、75的組合而檢出之電壓(檢出電壓)。亦即,本實施形態亦因應滑件100的按壓位置,而變化配線圖案31、70之間的電阻值。滑件100在圖中+X方向滑動的情形下,配線圖案31、70之間的電阻值,會伴隨滑件100的滑動而漸漸地上升。若將此可變電阻器1C的配線圖案31、70連接至萬用電表等,這個萬用電表等會輸出電源電壓與配線圖案70的檢出電壓的電位差。 In conjunction with this, wiring pattern 70, which connects comb patterns 75a-75i, detects a voltage (detection voltage) corresponding to the combination of comb patterns 45 and 75 connected via connector 80. In other words, this embodiment also changes the resistance between wiring patterns 31 and 70 in response to the pressed position of slider 100. When slider 100 slides in the +X direction in the figure, the resistance between wiring patterns 31 and 70 gradually increases as slider 100 slides. If wiring patterns 31 and 70 of this variable resistor 1C are connected to a multimeter, the multimeter outputs the potential difference between the power supply voltage and the detection voltage of wiring pattern 70.

另一方面,從如圖15所示狀態使滑件100在圖中-X方向滑動的情形下,隨著這個滑件100的滑動,藉由連接體80連接之梳齒圖案的組合,會變化為:梳齒圖案45f、75e→梳齒圖案75e、45e→梳齒圖案45e、75d→梳齒圖案75d、45d→梳齒圖案45d、75c→‧‧‧→梳齒圖案45b、75a,→梳齒圖案75a、45a。在此情形下,配線圖案31、70之間的電阻值,會伴隨滑件100的滑動而漸漸地下降。 On the other hand, when slider 100 is slid in the -X direction in the figure from the state shown in Figure 15, as slider 100 slides, the combination of comb patterns connected by connector 80 changes as slider 100 slides: comb pattern 45f, 75e → comb pattern 75e, 45e → comb pattern 45e, 75d → comb pattern 75d, 45d → comb pattern 45d, 75c → ‧‧‧ → comb pattern 45b, 75a → comb pattern 75a, 45a. In this case, the resistance between wiring patterns 31 and 70 gradually decreases as slider 100 slides.

在此第三實施形態中,由於第一夾雜部23亦埋入梳齒圖案45、75彼此之間的空間,故與上述第一實施形態相同,能在抑制梳齒圖案45、75的劣化的同時,亦能抑制可變電阻器1C的檢出精確度的惡化。 In this third embodiment, since the first intervening portion 23 is also embedded in the space between the comb-tooth patterns 45 and 75, similar to the first embodiment, degradation of the comb-tooth patterns 45 and 75 can be suppressed while also reducing the deterioration of the detection accuracy of the variable resistor 1C.

再者,以上說明之實施形態,係為了容易地理解本發明而記載,而非為了將本發明限於所記載者。因此,上述實施形態所揭示之各要素,其旨趣亦包含本發明所屬技術領域的範圍內全部的設計變更、均等物等。 Furthermore, the embodiments described above are provided to facilitate understanding of the present invention and are not intended to limit the present invention to the embodiments described above. Therefore, the elements disclosed in the embodiments described above are intended to encompass all design modifications, equivalents, and the like within the technical field to which the present invention pertains.

例如,在第一~第三實施形態中,梳齒圖案45雖形成在下側膜基板10A,但亦可形成在透過滑件100按壓的上側膜基板60A。 For example, in the first to third embodiments, the comb pattern 45 is formed on the lower film substrate 10A, but it can also be formed on the upper film substrate 60A pressed by the slider 100.

此外,在第一~第三實施形態中,可變電阻器1A~1C的操作雖然係透過這個可變電阻器1A~1C本身所具備的滑件100而進行,但並不特別限定於此。例如,亦可取代滑件100而透過操作者的手指操作可變電阻器。 Furthermore, in the first through third embodiments, the variable resistors 1A-1C are operated using the slider 100 provided within the variable resistors 1A-1C. However, this is not a limitation. For example, the variable resistors may be operated using the operator's finger in place of the slider 100.

此外,在上述實施形態中,雖然在配線圖案31連接電源的同時配 線圖案35亦接地,並透過配線圖案70的取得檢出電壓而檢出可變電阻器1A~1C的電阻值,但為了撿出可變電阻器的電阻值得迴路構成,並不特別限定於此。 Furthermore, in the above embodiment, while wiring pattern 31 is connected to the power supply and wiring pattern 35 is also grounded, and the resistance values of variable resistors 1A-1C are detected by obtaining a detection voltage from wiring pattern 70, the circuit configuration for detecting the resistance values of the variable resistors is not particularly limited to this.

例如,亦可不設置配線圖案35,而使電源連接至配線圖案31、70。在此情形下,亦可因應滑件100的按壓位置而改變配線圖案31、70之間的電阻值。 For example, wiring pattern 35 may not be provided, and the power supply may be connected to wiring patterns 31 and 70. In this case, the resistance value between wiring patterns 31 and 70 can also be changed according to the pressed position of slider 100.

1A:可變電阻器 10A:下側膜基板 11:基材 12:上面 20:第一阻劑層 21:薄化部 21a:上面 22:突出部 22a:上面 23:第一夾雜部 24:第二夾雜部 25:第三夾雜部 45a~45j:梳齒圖案 46:上面 47:下面 50:第二阻劑層 50a:上面 51:開口 60A:上側膜基板 61:基材 62:下面 63:上面 80:連接體 81:第一本體部 82:第一保護層 90:間隔物 91:開口 100:滑件 110:按壓部 SA:滑動領域 H 1,H 2,H 3:高度 1A: Variable resistor 10A: Lower film substrate 11: Substrate 12: Top surface 20: First resist layer 21: Thinned portion 21a: Top surface 22: Protrusion 22a: Top surface 23: First interlayer 24: Second interlayer 25: Third interlayer 45a-45j: Comb pattern 46: Top surface 47: Bottom surface 50: Second resist layer 50a: Top surface 51: Opening 60A: Upper film substrate 61: Substrate 62: Bottom surface 63: Top surface 80: Connector 81: First body 82: First protective layer 90: Spacer 91: Opening 100: Slider 110: Pressing portion SA: Sliding area H1 , H2 , H3 : Height

Claims (10)

一種可變電阻器,具備: 第一基材; 複數個梳齒圖案(comb teeth pattern),支持前述第一基材的同時,互相空出間隔而延伸;以及 絕緣體,其為了埋入前述梳齒圖案彼此之間的空間,配置在前述第一基材上; 其中, 前述梳齒圖案具有與前述第一基材相反側的前端面; 前述前端面從前述絕緣體露出,其中, 前述絕緣體,包括: 第一夾雜部,位於前述梳齒圖案彼此之間;以及 第二夾雜部,位於前述第一基材與前述梳齒圖案之間。 A variable resistor comprises: a first substrate; a plurality of comb teeth patterns supporting the first substrate and extending with spaces therebetween; and an insulator disposed on the first substrate to fill the spaces between the comb teeth patterns; the comb teeth patterns having front faces on the side opposite to the first substrate; the front faces being exposed from the insulator; the insulator comprising: a first intervening portion positioned between the comb teeth patterns; and a second intervening portion positioned between the first substrate and the comb teeth pattern. 如請求項1記載之可變電阻器,其中, 前述絕緣體具有與前述第一基材相反側的第一主面; 源自前述第一基材的前述前端面的高度,與源自前述第一基材的前述第一主面的高度實質上相同。 The variable resistor of claim 1, wherein: the insulator has a first main surface on the opposite side of the first substrate; the height of the front end surface relative to the first substrate is substantially the same as the height of the first main surface relative to the first substrate. 如請求項1記載之可變電阻器,其中, 前述絕緣體具有與前述第一基材相反側的第一主面; 前述第一主面,相對於前述第一基材實質上平行地延伸。 The variable resistor of claim 1, wherein: the insulator has a first principal surface opposite to the first substrate; the first principal surface extends substantially parallel to the first substrate. 如請求項1記載之可變電阻器,其中, 前述絕緣體具有與前述第一基材相反側的第一主面; 前述可變電阻器包含阻抗體; 前述複數個梳齒圖案包含與前述阻抗體連接的複數個第一梳齒圖案; 前述第一梳齒圖案,包含: 前述前端面從前述絕緣體露出的第一部分;以及 與前述第一部分一體化形成的同時,與前述阻抗體連接的第二部分; 在相對於前述第一主面垂直的第一方向中,前述第二部分的厚度較前述第一部分的厚度更薄。 The variable resistor as claimed in claim 1, wherein: the insulator has a first principal surface opposite to the first substrate; the variable resistor includes an impedance element; the plurality of comb-tooth patterns include a plurality of first comb-tooth patterns connected to the impedance element; the first comb-tooth pattern includes: a first portion whose front end face is exposed from the insulator; and a second portion integrally formed with the first portion and connected to the impedance element; the second portion is thinner than the first portion in a first direction perpendicular to the first principal surface. 如請求項1記載之可變電阻器, 前述可變電阻器,具備: 阻抗體,配置在前述第一基材上; 第一配線圖案,配置在前述第一基材上的同時,與前述阻抗體連接; 間隔物(spacer),具有開口; 第二基材,藉由前述間隔物積層於前述第一基材; 連接體,位於前述開口内地配置在前述第二基材上,其透過從前述第二基材外側按壓滑件(slider)而與前述阻抗體電性連接; 第二配線圖案,配置在前述第二基材上,連接前述連接體,或者配置在前述第一基材上,透過按壓前述滑件而與前述連接體電性連接; 其中, 在俯視中,前述連接體具有與前述阻抗體非重疊的非重疊領域; 在俯視中,前述非重疊領域包含能滑動前述滑件的滑動領域; 前述前端面,係前述梳齒圖案之與前述連接體對向的面; 因應前述滑件的位置,能改變前述第一配線圖案與前述第二配線圖案之間的電阻值。 The variable resistor as recited in claim 1, comprising: an impedance element disposed on the first substrate; a first wiring pattern disposed on the first substrate and connected to the impedance element; a spacer having an opening; a second substrate laminated on the first substrate via the spacer; a connector disposed on the second substrate within the opening and electrically connected to the impedance element by pressing a slider from the outside of the second substrate; the second wiring pattern disposed on the second substrate and connected to the connector, or disposed on the first substrate and electrically connected to the connector by pressing the slider; wherein, in a top view, the connector has a non-overlapping region that does not overlap with the impedance element; In a top view, the non-overlapping area includes a sliding area in which the slider can slide. The front end surface is the surface of the comb pattern facing the connector. The resistance between the first wiring pattern and the second wiring pattern can be varied in response to the position of the slider. 如請求項5記載之可變電阻器,其中, 前述第二配線圖案,配置在前述第二基材上的同時,與前述連接體連接; 前述複數個梳齒圖案,包含連接前述阻抗體的複數個第一梳齒圖案; 在俯視中,前述第一梳齒圖案與前述滑動領域重疊; 前述連接體,透過從前述第二基材的外側按壓前述滑件而與前述第一梳齒圖案接觸。 The variable resistor as recited in claim 5, wherein: the second wiring pattern is disposed on the second substrate and connected to the connector; the plurality of comb-tooth patterns include a plurality of first comb-tooth patterns connected to the resistor; the first comb-tooth pattern overlaps the sliding region in a top view; the connector contacts the first comb-tooth pattern by pressing the slider from an outer side of the second substrate. 如請求項5記載之可變電阻器,其中 前述第二配線圖案配置在前述第一基材上; 前述複數個梳齒圖案,包含與前述阻抗體連接的複數個第一梳齒圖案; 在俯視中,前述第一梳齒圖案及前述第二配線圖案與前述滑動領域重疊; 前述連接體,透過從前述第二基材的外側按壓前述滑件而與前述第一梳齒圖案及前述第二配線圖案接觸。 The variable resistor as recited in claim 5, wherein: the second wiring pattern is disposed on the first substrate; the plurality of comb-tooth patterns include a plurality of first comb-tooth patterns connected to the resistor; in a top view, the first comb-tooth pattern and the second wiring pattern overlap the sliding region; the connector contacts the first comb-tooth pattern and the second wiring pattern by pressing the slider from an outer side of the second substrate. 如請求項5記載之可變電阻器,其中, 前述第二配線圖案配置在前述第一基材上; 前述複數個梳齒圖案,包含: 複數個第一梳齒圖案,與前述阻抗體連接;以及 複數個第二梳齒圖案,與前述第二配線圖案連接; 在俯視中,前述第一及第二梳齒圖案與前述滑動領域重疊; 前述第一梳齒圖案與前述第二梳齒圖案,在前述滑動領域,沿著前述連接體的延伸方向相互排列; 前述連接體,透過從前述第一基材按壓前述滑件而與前述第一及前述第二梳齒圖案接觸。 The variable resistor as recited in claim 5, wherein: the second wiring pattern is disposed on the first substrate; the plurality of comb-tooth patterns include: a plurality of first comb-tooth patterns connected to the resistor; and a plurality of second comb-tooth patterns connected to the second wiring pattern; in a top view, the first and second comb-tooth patterns overlap with the sliding region; the first comb-tooth pattern and the second comb-tooth pattern are arranged relative to each other in the sliding region along an extending direction of the connector; the connector contacts the first and second comb-tooth patterns by pressing the slider from the first substrate. 如請求項5記載之可變電阻器,其中, 前述可變電阻器,配置在前述第一基材上的同時,更具備連接前述阻抗體的第三配線圖案; 前述複數個梳齒圖案,包含: 第三梳齒圖案,與前述第一配線圖案連接;以及 第四梳齒圖案,與前述第三配線圖案連接; 在俯視中,前述第三及第四梳齒圖案與前述滑動領域重疊。 The variable resistor as recited in claim 5, wherein: the variable resistor is disposed on the first substrate and further comprises a third wiring pattern connected to the resistor; the plurality of comb-tooth patterns include: a third comb-tooth pattern connected to the first wiring pattern; and a fourth comb-tooth pattern connected to the third wiring pattern; in a top view, the third and fourth comb-tooth patterns overlap with the sliding region. 一種可變電阻器的製造方法,其係如請求項1~9中任一項記載之可變電阻器的製造方法,具備: 第一步驟:準備具有離型處理面的支持體; 第二步驟:在前述支持體的前述離型處理面上形成前述梳齒圖案; 第三步驟:為了埋入前述梳齒圖案彼此之間,在前述離型處理面上形成前述絕緣體;以及 第四步驟:從前述支持體將前述梳齒圖案與前述絕緣體轉印至前述第一基材。 A method for manufacturing a variable resistor according to any one of claims 1 to 9 comprises: Step 1: Preparing a support having a release-treated surface; Step 2: Forming the comb-tooth pattern on the release-treated surface of the support; Step 3: Forming the insulator on the release-treated surface to fill the gaps between the comb-tooth pattern; and Step 4: Transferring the comb-tooth pattern and the insulator from the support to the first substrate.
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TW201801100A (en) * 2016-05-26 2018-01-01 摩達伊諾琴股份有限公司 Protection contactor
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