TWI895865B - Method for packaging chip, chip packaging structure, and terminal device - Google Patents
Method for packaging chip, chip packaging structure, and terminal deviceInfo
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Abstract
Description
本申請涉及晶片封裝領域,尤其涉及晶片封裝方法、晶片封裝結構以及終端裝置。 This application relates to the field of chip packaging, and more particularly to a chip packaging method, a chip packaging structure, and a terminal device.
晶片通常內埋於電路板中,以減小晶片封裝結構的體積。晶片的厚度方向通常與電路板層疊的方向相同,在晶片封裝過程中,需要在電路板上鑽孔後形成導通孔,以電連接電路板和晶片,若晶片上的焊腳密集,對於鑽孔以及電鍍形成導通孔的精度要求均較高,否則容易焊接不良。 Chips are often embedded within circuit boards to minimize the size of the chip package. The thickness of the chip typically aligns with the stacking direction of the circuit board. During the chip packaging process, vias are drilled into the circuit board to electrically connect the board and chip. If the chip has dense solder pins, high precision is required for both drilling and plating the vias, otherwise soldering problems can easily occur.
因此,有必要提供一種焊接良好的晶片封裝方法,以解決上述問題。 Therefore, it is necessary to provide a chip packaging method with good soldering to solve the above problems.
一種晶片封裝方法,包括步驟:在電路板上形成凹槽,凹槽包括相對設置的第一側壁以及第二側壁,電路板包括線路層,線路層暴露於第一側壁;提供晶片組件,晶片組件包括晶片、導電膏和變形片,變形片和導電膏位於晶片相對兩表面,將晶片組件置於第一溫度中以使變形片收縮;將變形片收縮後的晶片組件置於凹槽中,變形片與第二側壁間隔設置;在第二溫度時,導電膏與線路層接觸,變形片與第二側壁接觸;將電路板以及晶片組件置於第三 溫度中進行回流焊,以使導電膏和線路層電連接,其中,第三溫度大於第二溫度,第二溫度大於第一溫度。 A chip packaging method comprises the following steps: forming a recess in a circuit board, the recess comprising a first sidewall and a second sidewall disposed opposite each other; the circuit board comprising a circuit layer, the circuit layer exposed to the first sidewall; providing a chip assembly, the chip assembly comprising a chip, a conductive paste, and a deformable sheet, the deformable sheet and the conductive paste being located on opposite surfaces of the chip; exposing the chip assembly to a first temperature to shrink the deformable sheet; placing the chip assembly with the shrunk deformable sheet in the recess, with the deformable sheet spaced apart from the second sidewall; at a second temperature, the conductive paste contacts the circuit layer, and the deformable sheet contacts the second sidewall; and exposing the circuit board and chip assembly to a third temperature for reflow soldering to electrically connect the conductive paste and the circuit layer, wherein the third temperature is greater than the second temperature, and the second temperature is greater than the first temperature.
在本申請一些實施方式中,晶片封裝方法還包括:在凹槽中填充封裝層;在電路板上形成通孔,並去除變形片,晶片背離導電膏的表面暴露於通孔;在通孔中形成導通層。 In some embodiments of the present application, the chip packaging method further includes: filling the groove with a packaging layer; forming a through hole in the circuit board and removing the deforming sheet, exposing the surface of the chip facing away from the conductive paste to the through hole; and forming a conductive layer in the through hole.
在本申請一些實施方式中,變形片的熱膨脹係數大於電路板的熱膨脹係數。 In some embodiments of the present application, the thermal expansion coefficient of the deformable sheet is greater than the thermal expansion coefficient of the circuit board.
在本申請一些實施方式中,變形片的材質選自鋅、銅、鉛和鋁中的一種。 In some embodiments of the present application, the material of the deformable sheet is selected from one of zinc, copper, lead and aluminum.
在本申請一些實施方式中,凹槽沿第一方向凹陷,導電膏、晶片以及變形片沿第二方向層疊設置,第一方向與第二方向相互垂直。 In some embodiments of the present application, the groove is recessed along a first direction, and the conductive paste, chip, and deformable sheet are stacked along a second direction, with the first direction and the second direction being perpendicular to each other.
在本申請一些實施方式中,將變形片收縮後的晶片組件置於凹槽後,變形片與第二側壁之間的距離大於或等於0.56μm。 In some embodiments of this application, after the chip assembly with the deformable plate contracted is placed in the groove, the distance between the deformable plate and the second sidewall is greater than or equal to 0.56 μm.
在本申請一些實施方式中,第一溫度小於或等於0℃,和/或第三溫度大於或等於220℃。 In some embodiments of the present application, the first temperature is less than or equal to 0°C, and/or the third temperature is greater than or equal to 220°C.
一種晶片封裝結構,包括、電路板、晶片、導電膏和導通層。電路板包括沿第一方向層疊設置的線路層以及介質層;晶片包括本體以及焊腳,焊腳沿第二方向設置於本體的表面;導電膏沿第二方向設置於線路層以及焊腳之間以電連接焊腳以及線路層;導通層沿第一方向貫穿電路板並與本體背離焊腳的表面連接。 A chip package structure includes a circuit board, a chip, a conductive paste, and a conductive layer. The circuit board includes a circuit layer and a dielectric layer stacked along a first direction; the chip includes a body and solder pins, which are arranged on the surface of the body along a second direction; the conductive paste is arranged between the circuit layer and the solder pins along the second direction to electrically connect the solder pins and the circuit layer; and the conductive layer penetrates the circuit board along the first direction and connects to the surface of the body facing away from the solder pins.
在本申請一些實施方式中,第一方向與第二方向相互垂直。 In some embodiments of the present application, the first direction and the second direction are perpendicular to each other.
一種終端裝置,終端裝置包括晶片封裝結構。 A terminal device includes a chip package structure.
一種晶片封裝方法,採用熱脹冷縮的原理,先將晶片組件置於低溫環境(即第一溫度)中,以使晶片組件中的變形片收縮;再將晶片組件置於 開設有凹槽的電路板中,在常溫環境(即第二溫度)中調整晶片組件在凹槽中的位置,使得晶片的焊腳與電路板的線路層相對應,並以使晶片組件在凹槽中的位置相對固定;在高溫環境(即第三溫度)中進行回流焊,以使導電膏連接電路板以及晶片,變形片在高溫環境中膨脹擠壓晶片,以增加晶片與電路板的連接可靠性。 A chip packaging method employs the principle of thermal expansion and contraction. The chip assembly is first placed in a low-temperature environment (i.e., a first temperature) to contract the deformable tabs within the chip assembly. The chip assembly is then placed in a circuit board with a recess. At room temperature (i.e., a second temperature), the position of the chip assembly within the recess is adjusted so that the chip's solder pins align with the circuit board's wiring layer, securing the chip assembly relative to the recess. Reflow soldering is then performed at a high-temperature environment (i.e., a third temperature) to connect the conductive paste to the circuit board and chip. The deformable tabs expand in the high-temperature environment, compressing the chip to enhance the reliability of the connection between the chip and the circuit board.
200:終端裝置 200: Terminal device
100:晶片封裝結構 100: Chip packaging structure
10:電路板 10: Circuit board
11:介質層 11: Dielectric layer
13:線路層 13: Line layer
15:凹槽 15: Groove
152:第一側壁 152: First side wall
154:第二側壁 154: Second side wall
156:底壁 156:Bottom wall
20:晶片組件 20: Chipset
21:晶片 21: Chip
212:本體 212: Body
214:焊腳 214: Soldering pins
23:變形片 23: Transformer
25:導電膏 25: Conductive paste
252:第一間隙 252: The First Gap
254:第二間隙 254: The Second Gap
30:封裝層 30: Packaging layer
40:覆銅板 40: Copper clad plate
41:線路基板 41:Circuit substrate
50:通孔 50: Through hole
51:導通層 51: conductive layer
T1:第一溫度 T1: First temperature
T2:第二溫度 T2: Second temperature
T3:第三溫度 T3: The third temperature
L1:第一方向 L1: First Direction
L2:第二方向 L2: Second Direction
圖1為本申請實施提供的在電路板上形成凹槽後的截面示意圖。 Figure 1 is a schematic cross-sectional view of a circuit board after a groove is formed according to an embodiment of this application.
圖2為本申請實施例中將晶片組件置於第一溫度中以使變形片收縮的流程示意圖。 Figure 2 is a schematic diagram of the process of placing the chip assembly at a first temperature to shrink the deformable sheet in this embodiment of the application.
圖3為將圖2所示的收縮後的晶片組件置於圖1的凹槽後的截面示意圖。 Figure 3 is a schematic cross-sectional view of the shrunken chip assembly shown in Figure 2 after it is placed in the groove of Figure 1.
圖4為將圖3所示的電路板以及晶片組件置於第二溫度中以使變形片恢復尺寸後的截面示意圖。 Figure 4 is a schematic cross-sectional view of the circuit board and chip assembly shown in Figure 3 after being placed at a second temperature to allow the deformable piece to recover its size.
圖5為將圖4所示的電路板以及晶片組件置於第三溫度中進行回流焊後的截面示意圖。 Figure 5 is a schematic cross-sectional view of the circuit board and chip assembly shown in Figure 4 after being subjected to reflow soldering at a third temperature.
圖6為將圖5所示的經過回流焊的電路板以及晶片組件置於第二溫度後的截面示意圖。 FIG6 is a schematic cross-sectional view of the reflow-processed circuit board and chip assembly shown in FIG5 after being exposed to a second temperature.
圖7為在圖6所示的凹槽以及電路板的表面形成封裝層後的截面示意圖。 Figure 7 is a schematic cross-sectional view of the groove shown in Figure 6 and the surface of the circuit board after a packaging layer is formed.
圖8為在圖7所示的封裝層以及電路板的表面設置覆銅板後的截面示意圖。 Figure 8 is a schematic cross-sectional view of the package layer and circuit board shown in Figure 7 after a copper clad plate is provided on their surfaces.
圖9為在圖8所示的電路板上形成通孔後的截面示意圖。 Figure 9 is a schematic cross-sectional view of the circuit board shown in Figure 8 after a through hole is formed.
圖10為在圖9的通孔中形成導通層並對覆銅板進行線路製作後得到的晶片封裝結構的截面示意圖。 Figure 10 is a schematic cross-sectional view of the chip package structure obtained after forming a conductive layer in the through-hole of Figure 9 and fabricating circuits on the copper-clad substrate.
圖11為圖10的晶片封裝結構部分區域的結構示意圖。 Figure 11 is a schematic diagram of a portion of the chip package structure shown in Figure 10.
圖12為本申請實施例提供的終端裝置的結構示意圖。 Figure 12 is a schematic diagram of the structure of the terminal device provided in an embodiment of this application.
為了能夠更清楚地理解本申請的上述目的、特徵和優點,下面結合附圖和具體實施方式對本申請進行詳細描述。需要說明的是,在不衝突的情況下,本申請的實施方式及實施方式中的特徵可以相互組合。在下面的描述中闡述了很多具體細節以便於充分理解本申請,所描述的實施方式僅僅是本申請一部分實施方式,而不是全部的實施方式。基於本申請中的實施方式,本領域普通技術人員在沒有做出創造性勞動前提下所獲得的所有其他實施方式,都屬於本申請保護的範圍。 To facilitate a clearer understanding of the aforementioned objectives, features, and advantages of this application, the following detailed description is provided with reference to the accompanying drawings and specific embodiments. It should be noted that, where non-conflicting, the embodiments of this application and the features therein may be combined. The following description provides numerous specific details to facilitate a full understanding of this application. The embodiments described represent only a portion of the embodiments of this application, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of this application without inventive effort are also protected by this application.
除非另有定義,本文所使用的所有的技術和科學術語與屬於本申請的技術領域的技術人員通常理解的含義相同。本文中在本申請的說明書中所使用的術語只是為了描述具體的實施方式的目的,不是旨在於限制本申請。本文所使用的術語“和/或”包括一個或多個相關的所列項目的所有的和任意的組合。 Unless otherwise defined, all technical and scientific terms used herein have the same meanings as commonly understood by those skilled in the art to which this application relates. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and/or" used herein includes all and any combinations of one or more of the related listed items.
在本申請的各實施例中,為了便於描述而非限制本申請,本申請專利申請說明書以及申請專利範圍中使用的術語“連接”並非限定於物理的或者機械的連接,不管是直接的還是間接的。“上”、“下”、“上方”、下方”、“左”、“右”等僅用於表示相對位置關係,當被描述物件的絕對位置改變後,則該相對位置關係也相應地改變。 In the various embodiments of this application, for the purpose of description and not limitation, the term "connected" used in this patent specification and scope is not limited to physical or mechanical connections, whether direct or indirect. Terms such as "upper," "lower," "above," "below," "left," and "right" are used solely to indicate relative positional relationships. When the absolute position of the described objects changes, the relative positional relationship also changes accordingly.
請參閱圖1至圖11,本申請實施例提供一種晶片封裝方法,可以包括以下步驟: Referring to Figures 1 to 11, this embodiment of the present application provides a chip packaging method, which may include the following steps:
步驟S1:請參閱圖1,在電路板10上形成凹槽15,凹槽15包括相對設置的第一側壁152以及第二側壁154,電路板10包括線路層13,線路層13暴露於第一側壁152。 Step S1: Referring to Figure 1 , a groove 15 is formed on the circuit board 10. The groove 15 includes a first sidewall 152 and a second sidewall 154 disposed opposite each other. The circuit board 10 includes a circuit layer 13, which is exposed at the first sidewall 152.
電路板10可以是軟板、硬板或者軟硬結合板。電路板10還可以包括介質層11,線路層13與介質層11沿第一方向L1層疊設置,線路層13與介質層11的層數可以為一層或者多層。在本實施例中,線路層13的層數為多層。 The circuit board 10 can be a flexible board, a rigid board, or a rigid-flexible board. The circuit board 10 can also include a dielectric layer 11. A circuit layer 13 and the dielectric layer 11 are stacked along a first direction L1. The circuit layer 13 and the dielectric layer 11 can have one or more layers. In this embodiment, the circuit layer 13 has multiple layers.
凹槽15沿第一方向L1凹陷,凹槽15還包括底壁156,底壁156連接第一側壁152和第二側壁154,第一側壁152、第二側壁154以及底壁156圍設形成凹槽15。在本實施例中,第一側壁152和第二方向L2均與第一方向L1平行,底壁156與第二方向L2平行,第二方向L2可與第一方向L1相互垂直。 The groove 15 is recessed along the first direction L1 and includes a bottom wall 156. The bottom wall 156 connects the first sidewall 152 and the second sidewall 154. The first sidewall 152, the second sidewall 154, and the bottom wall 156 enclose the groove 15. In this embodiment, the first sidewall 152 and the second direction L2 are both parallel to the first direction L1, and the bottom wall 156 is parallel to the second direction L2. The second direction L2 may be perpendicular to the first direction L1.
可以採用鐳射切割或者機械鑽孔的方式形成凹槽15。 The groove 15 can be formed by laser cutting or mechanical drilling.
步驟S2:請參閱圖2,提供晶片組件20,晶片組件20包括晶片21、導電膏25和變形片23,變形片23和導電膏25位於晶片21相對兩表面,將晶片組件20置於第一溫度T1中以使變形片23收縮。 Step S2: Referring to Figure 2, a chip assembly 20 is provided. The chip assembly 20 includes a chip 21, a conductive paste 25, and a deformable sheet 23. The deformable sheet 23 and the conductive paste 25 are located on opposite surfaces of the chip 21. The chip assembly 20 is placed at a first temperature T1 to cause the deformable sheet 23 to contract.
晶片21包括本體212和多個焊腳214,焊腳214位於本體212的表面,變形片23位於本體212背離焊腳214的表面,導電膏25位於每一焊腳214的表面。暴露於凹槽15的線路層13的位置與多個導電膏25的位置相對應。即相當於凹槽15沿第一方向L1凹陷,導電膏25、晶片21以及變形片23沿第二方向L2層疊設置,第一方向L1與第二方向L2相互垂直。 Chip 21 includes a body 212 and multiple solder pins 214. Solder pins 214 are located on the surface of body 212. Deformable tabs 23 are located on the surface of body 212 facing away from solder pins 214. Conductive paste 25 is located on the surface of each solder pin 214. The position of the circuit layer 13 exposed in recess 15 corresponds to the position of the multiple conductive pastes 25. This is equivalent to recess 15 being recessed along a first direction L1. The conductive paste 25, chip 21, and deformable tabs 23 are stacked along a second direction L2, with the first and second directions L1 and L2 being perpendicular to each other.
導電膏25的材質可以是錫膏、銀膏等。 The material of the conductive paste 25 can be solder paste, silver paste, etc.
變形片23的熱膨脹係數大於電路板10的熱膨脹係數,以保證在後續高溫環境中,變形片23的膨脹幅度大於電路板10的膨脹係數。變形片23的材質可以選擇鋅、銅、鉛、鋁等材質,在本實施例中,變形片23的材質為鋅,鋅的熱膨脹係數為3.6×10-5K-1。 The thermal expansion coefficient of deformable plate 23 is greater than that of circuit board 10 to ensure that the plate expands more than the circuit board 10 in subsequent high-temperature environments. Deformable plate 23 can be made of materials such as zinc, copper, lead, and aluminum. In this embodiment, deformable plate 23 is made of zinc, which has a thermal expansion coefficient of 3.6× 10-5K -1 .
在本實施例中,將晶片組件20從第二溫度T2降溫至第一溫度T1,第二溫度T2大於第一溫度T1。第二溫度T2可以為常溫,例如15℃-35℃等,即不借助於外界作用而改變的溫度。當晶片組件20處於第一溫度T1時,變形片23相對於第二溫度T2時的狀態收縮,變形片23的體積減小。第一溫度T1可以小於或等於0℃,例如-25℃、-40℃、-50℃等,在本實施例中,將晶片組件20置於-50℃的低溫環境中,以使變形片23收縮。其中,晶片21的材質通常為矽,矽的熱膨脹係數為2.4×10-6K-1,相對於變形片23的熱膨脹係數較小,晶片21在第一溫度T1時的收縮量可以忽略不計。 In this embodiment, the chip assembly 20 is cooled from a second temperature T2 to a first temperature T1, where the second temperature T2 is greater than the first temperature T1. The second temperature T2 can be room temperature, such as 15°C-35°C, i.e., a temperature that does not change due to external influences. When the chip assembly 20 is at the first temperature T1, the deformable piece 23 contracts relative to the state at the second temperature T2, and the volume of the deformable piece 23 decreases. The first temperature T1 can be less than or equal to 0°C, such as -25°C, -40°C, or -50°C. In this embodiment, the chip assembly 20 is placed in a low temperature environment of -50°C to cause the deformable piece 23 to contract. The chip 21 is typically made of silicon, which has a thermal expansion coefficient of 2.4×10 -6 K -1 , which is smaller than the thermal expansion coefficient of the deformable plate 23 . Therefore, the shrinkage of the chip 21 at the first temperature T1 can be ignored.
步驟S3:請參閱圖3,將變形片23收縮後的晶片組件20置於凹槽15中,變形片23可與第二側壁154間隔設置,即變形片23與第二側壁154之間具有第一間隙252。 Step S3: Referring to Figure 3 , the chip assembly 20 with the deformable sheet 23 retracted is placed in the recess 15 . The deformable sheet 23 can be spaced apart from the second sidewall 154 , i.e., a first gap 252 is defined between the deformable sheet 23 and the second sidewall 154 .
當晶片組件20處於第一溫度T1中一段時間後,將晶片組件20置於凹槽15中,導電膏25朝向第一側壁152,變形片23朝向第二側壁154。沿第二方向L2,晶片組件20的寬度小於凹槽15的寬度,則將變形片23收縮後的晶片組件20置於凹槽15中後,變形片23與第二側壁154之間可具有一定的距離,晶片組件20可在凹槽15中調整位置,以使導電膏25與線路層13的位置對應。 After the chip assembly 20 has been at the first temperature T1 for a period of time, it is placed in the groove 15, with the conductive paste 25 facing the first sidewall 152 and the deformable sheet 23 facing the second sidewall 154. Along the second direction L2, the width of the chip assembly 20 is smaller than the width of the groove 15. After the deformable sheet 23 is retracted and placed in the groove 15, a certain distance can be maintained between the deformable sheet 23 and the second sidewall 154. The chip assembly 20 can be adjusted in the groove 15 so that the conductive paste 25 aligns with the circuit layer 13.
在一些實施例中,變形片23與第二側壁154之間的距離大於或等於0.56μm,以便於能夠調整晶片組件20在凹槽15中的位置。 In some embodiments, the distance between the deformable piece 23 and the second sidewall 154 is greater than or equal to 0.56 μm, so as to facilitate adjustment of the position of the chip assembly 20 in the groove 15.
步驟S4:請參閱圖4,在第二溫度T2時,導電膏25與線路層13接觸,變形片23與第二側壁154接觸。 Step S4: Referring to Figure 4, at the second temperature T2, the conductive paste 25 contacts the circuit layer 13, and the deformable sheet 23 contacts the second sidewall 154.
在本實施例中,將晶片組件20置於凹槽15後,將晶片組件20以及電路板10置於第二溫度T2為24℃的環境中,變形片23恢復至初始的尺寸,此時,晶片組件20的兩側均與電路板10連接,即導電膏25與線路層13接觸,變形片23 與第二側壁154接觸,有利於導電膏25與線路層13的位置對應後,減小或避免晶片組件20在凹槽15中的產生位移。 In this embodiment, after chip assembly 20 is placed in recess 15, chip assembly 20 and circuit board 10 are placed in a second temperature environment (T2) of 24°C. The deformable tabs 23 return to their original dimensions. At this point, both sides of chip assembly 20 are connected to circuit board 10. Specifically, the conductive paste 25 contacts the circuit layer 13, and the deformable tabs 23 contact the second sidewall 154. This facilitates alignment of the conductive paste 25 with the circuit layer 13, minimizing or preventing displacement of chip assembly 20 within recess 15.
若晶片組件20未置於第一溫度T1中而直接將晶片組件20置於凹槽15中,則難以調整晶片組件20在凹槽15中的位置,難以保證導電膏25與線路層13的位置對應,在後續焊接過程中容易出現橋接、裂紋等焊接不良現象;若增加凹槽15沿第二方向L2的寬度,則晶片組件20容易在凹槽15中產生位移,即使預先將導電膏25與線路層13的位置對應,但在後續步驟中,晶片組件20在凹槽15中容易產生位移,導電膏25與線路層13的位置會出現偏差,導致焊接不良。 If the chip assembly 20 is placed directly into the groove 15 without being exposed to the first temperature T1, it will be difficult to adjust the position of the chip assembly 20 within the groove 15, making it difficult to ensure that the conductive paste 25 aligns with the circuit layer 13. This can easily lead to poor soldering, such as bridging and cracking, during the subsequent soldering process. If the width of the groove 15 along the second direction L2 is increased, the chip assembly 20 will easily shift within the groove 15. Even if the conductive paste 25 is pre-aligned with the circuit layer 13, the chip assembly 20 will easily shift within the groove 15 during subsequent steps, causing the positions of the conductive paste 25 and the circuit layer 13 to deviate, resulting in poor soldering.
步驟S5:請參閱圖5,將電路板10以及晶片組件20置於第三溫度T3中進行回流焊,以使導電膏25和線路層13電連接,第三溫度T3大於第二溫度T2。 Step S5: Referring to Figure 5, the circuit board 10 and chip assembly 20 are placed in a third temperature T3 for reflow soldering to electrically connect the conductive paste 25 and the circuit layer 13. The third temperature T3 is greater than the second temperature T2.
第三溫度T3的大小可以根據導電膏25的種類進行調整,例如,在一些實施例中,第三溫度T3可以大於220℃,例如,在本實施例中,第三溫度T3為250℃。 The third temperature T3 can be adjusted according to the type of conductive paste 25. For example, in some embodiments, the third temperature T3 can be greater than 220°C. For example, in this embodiment, the third temperature T3 is 250°C.
在第三溫度T3時,變形片23和電路板10受熱膨脹,由於變形片23的熱膨脹係數大於電路板10的熱膨脹係數,變形片23的膨脹幅度大於電路板10的膨脹幅度,即沿第二方向L2,凹槽15的寬度小於晶片組件20的寬度,變形片23膨脹後具有擠壓位於變形片23兩側的元件的作用力,亦即變形片23具有擠壓晶片21的作用力,以使晶片21朝向第一側壁152的方向移動;同時,導電膏25在第三溫度T3下呈熔融狀態並與線路層13連接,變形片23具有擠壓晶片21的作用力,使得導電膏25與線路層13連接更緊密。採用導電膏25直接連接焊腳214與線路層13,省略了相關技術中鑽孔、電鍍以實現導通。 At the third temperature T3, the deformable sheet 23 and the circuit board 10 expand due to heat. Since the thermal expansion coefficient of the deformable sheet 23 is greater than that of the circuit board 10, the expansion amplitude of the deformable sheet 23 is greater than that of the circuit board 10. That is, along the second direction L2, the width of the groove 15 is smaller than the width of the chip assembly 20. After the deformable sheet 23 expands, it squeezes the deformable sheet 23. The forces acting on both sides of the chip 23, namely the deformable plate 23, compress the chip 21, causing it to move toward the first sidewall 152. Simultaneously, the conductive paste 25 melts at the third temperature T3 and connects to the circuit layer 13. The deformable plate 23 compresses the chip 21, creating a tighter connection between the conductive paste 25 and the circuit layer 13. Using conductive paste 25 to directly connect the solder pins 214 and the circuit layer 13 eliminates the drilling and plating required to achieve conductivity in related technologies.
請再次參閱圖4和圖5,當晶片組件20在第二溫度T2的環境中時,沿第一方向L1,變形片23的寬度小於本體212的寬度,且變形片23的投影位於本體212的投影內,以便於當晶片組件20在第三溫度T3的環境中後,變形片23膨 脹,可以避免變形片23沿第一方向L1的變形程度過大而引起晶片組件20沿第一方向L1移動,進而導致導電膏25與線路層13之間產生錯位。 Referring again to Figures 4 and 5 , when the chip assembly 20 is exposed to a second temperature T2, the width of the deformable sheet 23 along the first direction L1 is smaller than the width of the body 212, and the projection of the deformable sheet 23 lies within the projection of the body 212. This allows the deformable sheet 23 to expand when the chip assembly 20 is exposed to a third temperature T3. This prevents the deformable sheet 23 from excessively deforming along the first direction L1, potentially causing the chip assembly 20 to move along the first direction L1 and misalignment between the conductive paste 25 and the circuit layer 13.
請參閱圖6,當溫度降低,例如回到第二溫度T2後,導電膏25呈固態並電連接晶片21以及電路板10,晶片組件20的位置相對於回流焊之前的位置朝向第一側壁152移動一定的距離,變形片23收縮後與第二側壁154間隔設置,即變形片23與第二側壁154之間具有第二間隙254。其中,由於經過回流焊處理後,晶片組件20朝向第一側壁152移動一定的距離,則沿第二方向L2,第二間隙254的寬度大於第一間隙253的寬度。 Referring to Figure 6 , when the temperature drops, for example, to the second temperature T2, the conductive paste 25 solidifies and electrically connects the chip 21 and the circuit board 10. The chip assembly 20 moves a certain distance toward the first sidewall 152 relative to its pre-reflow position. The deformable tab 23 contracts and is spaced from the second sidewall 154, creating a second gap 254 between the deformable tab 23 and the second sidewall 154. Because the chip assembly 20 moves a certain distance toward the first sidewall 152 after the reflow process, the width of the second gap 254 along the second direction L2 is greater than the width of the first gap 253.
步驟S6:請參閱圖7,在凹槽15中填充封裝層30。 Step S6: Please refer to Figure 7 and fill the encapsulation layer 30 in the groove 15.
封裝層30可以填充於導電膏25與第一側壁152之間、變形片23與第二側壁154之間。封裝層30還可以位於電路板10開設有凹槽15的表面。 The packaging layer 30 can be filled between the conductive paste 25 and the first sidewall 152, and between the deformable sheet 23 and the second sidewall 154. The packaging layer 30 can also be located on the surface of the circuit board 10 where the groove 15 is formed.
步驟S7:請參閱圖8,在封裝層30背離電路板10的表面設置覆銅板40。 Step S7: Referring to Figure 8, a copper clad plate 40 is provided on the surface of the packaging layer 30 facing away from the circuit board 10.
在一些實施例中,可以根據線路層13層數的需求,增加增層步驟。覆銅板40後續用於製作成線路基板41,以實現線路層13的增層。在一些實施中,步驟S7也可以省略。 In some embodiments, additional layers can be added based on the number of circuit layers 13 required. The copper-clad substrate 40 is subsequently used to fabricate the circuit substrate 41 to achieve the addition of circuit layers 13. In some embodiments, step S7 can also be omitted.
步驟S8:請參閱圖9、圖10和圖11,形成貫穿覆銅板40以及電路板10的通孔50,並去除變形片23,晶片21背離導電膏25的表面暴露於通孔50,在通孔50中形成導通層51。 Step S8: Referring to Figures 9, 10, and 11, a through hole 50 is formed through the copper clad plate 40 and the circuit board 10. The deformed sheet 23 is removed, and the surface of the chip 21 facing away from the conductive paste 25 is exposed to the through hole 50. A conductive layer 51 is formed in the through hole 50.
可以通過電鍍的方式在通孔50中形成導通層51,得到晶片封裝結構100。導通層51與晶片21的表面連接,以實現散熱作用。導通層51還可以與電路板10以及線路基板41中的線路層13連接,以實現電導通的作用。 A conductive layer 51 can be formed in the through-hole 50 by electroplating to obtain the chip package structure 100. The conductive layer 51 is connected to the surface of the chip 21 to achieve heat dissipation. The conductive layer 51 can also be connected to the circuit board 10 and the circuit layer 13 in the circuit substrate 41 to achieve electrical conductivity.
本體212背離焊腳214的整個表面均可以與導通層51連接,增加散熱面積,從而增加散熱效果。 The entire surface of the body 212 facing away from the solder pins 214 can be connected to the conductive layer 51, increasing the heat dissipation area and thus improving the heat dissipation effect.
將晶片21以焊腳214朝向第二方向L2封裝於電路板10中,可以減小晶片封裝結構100沿第二方向L2的寬度,以使晶片封裝結構100適用於沿第二方向L2具有較小的安裝空間的環境中。 By packaging the chip 21 in the circuit board 10 with the solder pins 214 facing the second direction L2, the width of the chip package structure 100 along the second direction L2 can be reduced, making the chip package structure 100 suitable for environments with a smaller installation space along the second direction L2.
在形成導通層51的過程中,還一併對覆銅板40進行線路製作,以形成線路基板41。 During the process of forming the conductive layer 51, circuits are also fabricated on the copper-clad substrate 40 to form the circuit substrate 41.
請參閱圖10,本申請實施例還提供一種晶片封裝結構100,晶片封裝結構100可以包括電路板10、晶片21、導電膏25以及封裝層30。導電膏25連接晶片21以及電路板10,封裝層30將晶片21封裝於電路板10中。 Referring to FIG. 10 , this embodiment of the present application further provides a chip package structure 100 . The chip package structure 100 may include a circuit board 10 , a chip 21 , a conductive paste 25 , and a packaging layer 30 . The conductive paste 25 connects the chip 21 and the circuit board 10 , and the packaging layer 30 packages the chip 21 within the circuit board 10 .
電路板10包括介質層11以及線路層13,介質層11以及線路層13沿第一方向L1層疊設置。晶片21包括本體212以及焊腳214,焊腳214與本體212沿第二方向L2排列並設置於本體212的表面,導電膏25設置於線路層13以及焊腳214之間以電連接焊腳214以及線路層13,線路層13、導電膏25以及晶片21沿第二方向L2排列。第一方向L1與第二方向L2可以相互垂直。封裝層30填充於晶片21與電路板10之間。 The circuit board 10 includes a dielectric layer 11 and a circuit layer 13, which are stacked along a first direction L1. A chip 21 includes a body 212 and solder pins 214. The solder pins 214 and body 212 are arranged along a second direction L2 and disposed on the surface of the body 212. Conductive paste 25 is disposed between the circuit layer 13 and the solder pins 214 to electrically connect the solder pins 214 to the circuit layer 13. The circuit layer 13, conductive paste 25, and chip 21 are arranged along the second direction L2. The first direction L1 and the second direction L2 may be perpendicular to each other. A packaging layer 30 is placed between the chip 21 and the circuit board 10.
電路板10還包括導通層51,通孔50沿第一方向L1貫穿電路板10,導通層51與本體212背離焊腳214的表面連接,導通層51可用於將晶片21在工作中產生的熱量快速傳遞出去。 The circuit board 10 also includes a conductive layer 51. A through hole 50 extends through the circuit board 10 along a first direction L1. The conductive layer 51 is connected to the surface of the body 212 facing away from the solder pins 214. The conductive layer 51 can be used to quickly transfer heat generated by the chip 21 during operation.
請參閱圖12,本申請實施例還提供一種終端裝置200,終端裝置200包括晶片封裝結構100,終端裝置200可以是手機、相機、無人機、電腦、攝像頭等。在本實施例中,終端裝置200為手機。 Referring to FIG. 12 , this embodiment of the present application further provides a terminal device 200 , which includes a chip package structure 100 . The terminal device 200 may be a mobile phone, a camera, a drone, a computer, a video camera, or the like. In this embodiment, the terminal device 200 is a mobile phone.
本申請實施例提供的晶片封裝方法,採用熱脹冷縮的原理,先將晶片組件20置於低溫環境(即第一溫度T1)中,以使晶片組件20中的變形片23收縮;再將晶片組件20置於開設有凹槽15的電路板10中,在常溫環境(即第二溫度T2)中調整晶片組件20在凹槽15中的位置,使得晶片21的焊腳214與電路板 10的線路層13相對應,並以使晶片組件20在凹槽15中的位置相對固定;在高溫環境(即第三溫度T3)中進行回流焊,以使導電膏25連接電路板10以及晶片21,變形片23在高溫環境中膨脹擠壓晶片21,以增加晶片21與電路板10的連接可靠性。 The chip packaging method provided by the embodiment of the present application adopts the principle of thermal expansion and contraction. First, the chip assembly 20 is placed in a low temperature environment (i.e., a first temperature T1) to shrink the deformable piece 23 in the chip assembly 20. Then, the chip assembly 20 is placed in a circuit board 10 with a groove 15, and the position of the chip assembly 20 in the groove 15 is adjusted in a normal temperature environment (i.e., a second temperature T2) so that the chip assembly 20 shrinks. The solder pins 214 of the sheet 21 correspond to the wiring layer 13 of the circuit board 10, thereby fixing the chip assembly 20 in the groove 15. Reflow soldering is performed in a high-temperature environment (i.e., the third temperature T3) to connect the conductive paste 25 to the circuit board 10 and the chip 21. The deformable sheet 23 expands in the high-temperature environment, squeezing the chip 21 and increasing the reliability of the connection between the chip 21 and the circuit board 10.
以上實施方式僅用以說明本申請的技術方案而非限制,儘管參照以上較佳實施方式對本申請進行了詳細說明,本領域的普通技術人員應當理解,可以對本申請的技術方案進行修改或等同替換都不應脫離本申請技術方案的精神和範圍。 The above embodiments are intended only to illustrate the technical solutions of this application and are not intended to be limiting. Although this application is described in detail with reference to the above preferred embodiments, persons skilled in the art should understand that modifications or equivalent substitutions to the technical solutions of this application may be made without departing from the spirit and scope of the technical solutions of this application.
10:電路板 11:介質層 13:線路層 15:凹槽 152:第一側壁 154:第二側壁 156:底壁 20:晶片組件 21:晶片 212:本體 214:焊腳 23:變形片 25:導電膏 T3:第三溫度 L1:第一方向 L2:第二方向 10: Circuit board 11: Dielectric layer 13: Circuit layer 15: Groove 152: First sidewall 154: Second sidewall 156: Bottom wall 20: Chip assembly 21: Chip 212: Body 214: Solder pins 23: Deformable sheet 25: Conductive paste T3: Third temperature L1: First direction L2: Second direction
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|---|---|---|---|---|
| TWI234851B (en) * | 2000-10-02 | 2005-06-21 | Samsung Electronics Co Ltd | Chip scale package, printed circuit board, and method of designing a printed circuit board |
| US9806058B2 (en) * | 2015-07-02 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chip package having die structures of different heights and method of forming same |
| US10083939B2 (en) * | 2016-05-17 | 2018-09-25 | Samsung Electronics Co., Ltd. | Semiconductor package |
| TWI823461B (en) * | 2022-06-20 | 2023-11-21 | 大陸商宏啟勝精密電子(秦皇島)有限公司 | Package structure and manufacturing method thereof, and display assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI234851B (en) * | 2000-10-02 | 2005-06-21 | Samsung Electronics Co Ltd | Chip scale package, printed circuit board, and method of designing a printed circuit board |
| US9806058B2 (en) * | 2015-07-02 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chip package having die structures of different heights and method of forming same |
| US10083939B2 (en) * | 2016-05-17 | 2018-09-25 | Samsung Electronics Co., Ltd. | Semiconductor package |
| TWI823461B (en) * | 2022-06-20 | 2023-11-21 | 大陸商宏啟勝精密電子(秦皇島)有限公司 | Package structure and manufacturing method thereof, and display assembly |
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