TWI889721B - Laminated body for semiconductor processing, adhesive tape for semiconductor processing, and method for manufacturing semiconductor device - Google Patents

Abstract

The present invention aims to provide a semiconductor processing laminate and an adhesive tape for semiconductor processing that can be easily peeled off when picking up a semiconductor package without damaging the adhesion during cutting. Furthermore, the present invention aims to provide a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing. The present invention is a semiconductor processing laminate, which comprises a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape, wherein the temporary fixing tape comprises at least an adhesive layer, the adhesive tape for semiconductor processing comprises a base material and an adhesive layer laminated on one surface of the base material, and the base material of the adhesive tape for semiconductor processing is laminated on the temporary fixing tape in such a manner that the adhesive layer of the temporary fixing tape and the base material of the adhesive tape for semiconductor processing are in contact with each other, and the adhesive tape for semiconductor processing and the temporary fixing tape satisfy the following formula (1): 2.0×10 ^-3 ≦ (Fa/Fb) ≦ 6.0×10 ^-2 (1) In formula (1), Fa represents the peeling force in the 180° direction after the semiconductor processing adhesive tape is attached to the copper plate and heated at 150°C for 1 hour, and Fb represents the peeling force in the 180° direction after the temporary fixing tape is attached to the substrate surface of the semiconductor processing adhesive tape and heated at 150°C for 1 hour.

Description

Semiconductor processing laminate, semiconductor processing adhesive tape, and semiconductor device manufacturing method

The present invention relates to a multilayer body for semiconductor processing and an adhesive tape for semiconductor processing that can be easily peeled off when picking up a semiconductor package without damaging the adhesion during cutting. Furthermore, the present invention relates to a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

When processing electronic components such as semiconductors, measures are taken to ensure ease of handling and prevent damage by securing them to a support plate with an adhesive composition or by attaching adhesive tape to the component to protect it. For example, when a thick film wafer cut from a high-purity silicon single crystal is polished to a specified thickness to produce a thin film wafer, the thick film wafer is bonded to the support plate with an adhesive composition.

When singulating a larger semiconductor package into multiple individual semiconductor packages, adhesive tape is also applied to the semiconductor package. During this process, the semiconductor package with the adhesive tape attached is temporarily secured to a dicing tape, and the semiconductor package and the adhesive tape are cut together on the dicing tape. After dicing, the singulated semiconductor packages are removed from the dicing tape and/or adhesive tape using a needle pick-up technique, for example.

Thus, adhesive compositions or adhesive tapes used for electronic components must not only exhibit high adhesion, securely securing the components during processing, but also be able to be removed without damage after the processing is complete (hereinafter referred to as "high adhesion and easy peelability"). For example, Patent Document 1 discloses an adhesive sheet that utilizes an adhesive having "a multifunctional monomer or oligomer having radiation-polymerizable functional groups" bonded to the side chains or main chain of the polymer. Because it contains radiation-polymerizable functional groups, UV exposure causes the polymer to harden. By utilizing this, UV exposure during peeling reduces adhesion, allowing for peeling without leaving any residual paste. Prior Art Patent

Patent document 1: Japanese Patent Application Laid-Open No. 5-32946

[The problem that the invention aims to solve]

Meanwhile, the advancement of higher frequencies in communication devices such as mobile phones has created a problem: noise generated by these frequencies can cause malfunctions in semiconductor packages. In particular, the recent trend toward miniaturization of communication devices, resulting in increased device density and lower voltages, has made semiconductor packages susceptible to the noise generated by high frequencies. To address this issue, shielding treatments, such as sputter plating, are applied to the back and sides of singulated semiconductor packages after dicing to block high frequencies. During this shielding process, adhesive tape is applied to the front surface of the semiconductor package to protect the conductor path (front surface) and prevent contamination. That is, a semiconductor package with adhesive tape attached to the conductive surface (front surface) is temporarily fixed on a temporary fixing tape, and a metal film is formed on the back and side surfaces of the semiconductor package on the temporary fixing tape.

Currently, there has been insufficient research into the following steps: performing a semiconductor package cut with adhesive tape attached to the conductive surface (front surface) of the semiconductor package, and then performing a shielding process on the resulting singulated semiconductor packages. The present invention aims to provide a semiconductor processing laminate and an adhesive tape for semiconductor processing that can be easily peeled off during semiconductor package pickup without damaging the adhesion during cutting. Furthermore, the present invention aims to provide a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing. [Technical Means for Solving the Problem]

The present invention is a semiconductor processing laminate, which comprises a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape, wherein the temporary fixing tape comprises at least an adhesive layer, the adhesive tape for semiconductor processing comprises a base material and an adhesive layer laminated on one surface of the base material, and the base material of the adhesive tape for semiconductor processing is laminated on the temporary fixing tape in such a manner that the adhesive layer of the temporary fixing tape and the base material of the adhesive tape for semiconductor processing are in contact with each other, and the adhesive tape for semiconductor processing and the temporary fixing tape satisfy the following formula (1): 2.0×10 ^-3 ≦ (Fa/Fb) ≦ 6.0×10 ^-2 (1) In formula (1), Fa represents the peeling force in the 180° direction after the semiconductor processing adhesive tape is attached to the copper plate and heated at 150°C for 1 hour, and Fb represents the peeling force in the 180° direction after the temporary fixing tape is attached to the substrate surface of the semiconductor processing adhesive tape and heated at 150°C for 1 hour.

Furthermore, the present invention is an adhesive tape for semiconductor processing, comprising a substrate and an adhesive layer deposited on one surface of the substrate, and satisfying the following formula (2): 2.0× ^10-3 ≦ (Fa/Fb') ≦ 6.0× ^10-2 (2) In formula (2), Fa represents the peeling force in a 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb' represents the peeling force in a 180° direction after a temporary fixing tape having a bonding force of 7.5 N/25 mm to a SUS plate is attached to the substrate surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour. The present invention is described in detail below.

The inventors of the present invention have conducted research on a series of steps involving cutting a semiconductor package with adhesive tape attached to its conductive surface (front surface) and then performing a masking process on the resulting singulated semiconductor packages. This adhesive tape is required to maintain high adhesion to the semiconductor package during the cutting and masking processes, while also being easily peeled off the semiconductor package during pickup. In particular, if the adhesion during cutting is insufficient, the cleaning water used during cutting can penetrate the interface between the semiconductor package and the adhesive tape, causing the tape to peel. On the other hand, if the releasability during pickup is insufficient, peeling may occur at the interface between the temporary fixing tape and the adhesive tape, rather than at the interface between the semiconductor package and the adhesive tape, resulting in poor pickup. The inventors have studied a laminate comprising a temporary fixing tape and an adhesive tape laminated on the temporary fixing tape. The temporary fixing tape comprises at least an adhesive layer, and the adhesive tape comprises a base material and an adhesive layer, and is laminated on the temporary fixing tape such that the base material of the adhesive tape and the adhesive layer of the temporary fixing tape are in contact. The inventors discovered that by focusing on the adhesion of the adhesive tape to the adherend (made into a standard copper plate) and the adhesion of the temporary fixing tape to the adhesive tape substrate in such a laminate, and adjusting the ratio of these ratios within a specific range, they could achieve an adhesive tape with improved adhesion during cutting and releasability during pickup. This led to the completion of the present invention.

First, the semiconductor processing laminate of the present invention will be described. The semiconductor processing laminate of the present invention comprises a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape.

The temporary fixing tape is not particularly limited; any adhesive tape commonly used for temporary fixing in semiconductor device manufacturing, particularly during dicing or masking, can be used. The preferred lower limit of the temporary fixing tape's adhesion to the SUS plate is 6.0 N/25 mm, and the preferred upper limit is 9.0 N/25 mm. Maintaining the temporary fixing tape's adhesion to the SUS plate within this range facilitates adjusting the Fa/Fb ratio (described below) to a specific range, thereby improving both adhesion during dicing and peelability during pickup. The more preferred lower limit of the temporary fixing tape's adhesion to the SUS plate is 7.0 N/25 mm, and the more preferred upper limit is 8.0 N/25 mm. For example, the following method can be used to measure the adhesion of the temporary fixing tape to the SUS plate. First, place the temporary fixing tape on a SUS plate. A 2 kg rubber roller is moved back and forth across the tape at a speed of 300 mm/min to bond the tape to the SUS plate. The tape is then allowed to stand at 23°C for one hour to produce a test sample. The test sample is then peeled off in a 180° direction using an automatic stereoscope (manufactured by Shimadzu Corporation) at a temperature of 23°C and a relative humidity of 50% in accordance with JIS Z0237:2009. The peeling force is measured at a pulling speed of 300 mm/min at 23°C and a relative humidity of 50%.

The temporary fixing tape comprises at least an adhesive layer. Preferably, the temporary fixing tape comprises a base material and a silicone adhesive layer laminated on one surface of the base material. The silicone adhesive layer improves the heat resistance of the temporary fixing tape. The silicone compound comprising the silicone adhesive layer is not particularly limited; examples thereof include addition-curing silicones and peroxide-curing silicones.

The thickness of the adhesive layer of the temporary fixing tape is not particularly limited, but a preferred lower limit is 5 μm and a preferred upper limit is 500 μm. When the adhesive layer has a thickness within this range, it can adhere to the adherend with sufficient adhesion, thereby effectively securing the adherend. From the perspective of improving adhesion, the adhesive layer thickness has a more preferred lower limit of 10 μm, a more preferred upper limit of 300 μm, a further preferred lower limit of 15 μm, a further preferred upper limit of 250 μm, and a further preferred upper limit of 200 μm.

The material of the base material of the temporary fixing tape is not particularly limited, but is preferably a heat-resistant material. Examples of materials for the base material of the temporary fixing tape include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, and liquid crystal polymer. Among these, polyimide, polyamide, polyethylene terephthalate, and polyethylene naphthalate are preferred for their excellent heat resistance.

The thickness of the substrate of the temporary fixing tape is not particularly limited, but the preferred lower limit is 5 μm and the preferred upper limit is 200 μm. By keeping the thickness of the substrate within this range, a temporary fixing tape having moderate elasticity and excellent workability can be produced. The preferred lower limit of the thickness of the substrate of the temporary fixing tape is 10 μm, and the preferred upper limit is 150 μm.

There is no particular limitation on commercially available products of the temporary fixing tape. Examples include Kapton (registered trademark) adhesive tape 650R#50 and 650S#50 (both manufactured by Teraoka Corporation).

The adhesive tape for semiconductor processing comprises a substrate and an adhesive layer deposited on one surface of the substrate. The adhesive layer is deposited on the temporary fixing tape such that the substrate of the adhesive tape for semiconductor processing and the adhesive layer of the temporary fixing tape are in contact. Furthermore, the contact between the substrate of the adhesive tape for semiconductor processing and the adhesive layer of the temporary fixing tape means that the surface of the substrate of the adhesive tape for semiconductor processing opposite to the adhesive layer (the surface on which the adhesive layer is not deposited) is in contact with the adhesive layer of the temporary fixing tape.

The material of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but is preferably a heat-resistant material. Examples of materials for the substrate of the adhesive tape for semiconductor processing include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene oxide, polybutylene terephthalate, ultra-high molecular weight polyethylene, para-polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, and liquid crystal polymer. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred for their excellent heat resistance.

The substrate of the semiconductor processing adhesive tape preferably has an easy-adhesion layer on the surface opposite the adhesive layer. The easy-adhesion layer is formed on the surface of the substrate opposite the adhesive layer, i.e., the back surface. Having the easy-adhesion layer on the substrate of the semiconductor processing adhesive tape facilitates adjusting the Fa/Fb ratio (described below) within a specific range, thereby improving both adhesion during dicing and peelability during pickup.

Examples of the easily adhesive layer include SiOx layers, metal oxide layers, organometallic compound layers, polysilicon oxide layers, polymerizable polymer layers, corona treatment layers, and plasma treatment layers. Of these, SiOx layers, metal oxide layers, organometallic compound layers, polysilicon oxide layers, and polymerizable polymer layers are preferred for achieving excellent adhesion of the temporary fixing tape to the adhesive layer, particularly the polysilicone adhesive layer.

The method for forming the SiOx layer is not particularly limited. Examples thereof include: evaporating silicon dioxide on the back surface of the substrate, sputtering silicon dioxide on the back surface of the substrate, and coating silicon dioxide on the back surface of the substrate.

The metal oxide contained in the metal oxide layer is not particularly limited. Examples include aluminum oxide, antimony-doped tin oxide (ATO), copper oxide, and tin-doped indium oxide (ITO). Aluminum oxide and antimony-doped tin oxide (ATO) are preferred. The method for forming the metal oxide layer is not particularly limited. Examples include evaporating the metal oxide onto the back surface of the substrate, sputtering the metal oxide onto the back surface of the substrate, and coating the back surface of the substrate with a coating agent containing the metal oxide.

The organometallic compound contained in the organometallic compound layer is not particularly limited. Examples thereof include organic titanium compounds, organic zirconium compounds, and organic aluminum compounds. Among these, organic titanium compounds are preferred. The method for forming the organometallic compound layer is not particularly limited. Examples thereof include coating a coating agent such as a titanium oligomer-based coating agent on the back surface of the substrate.

The polysilicone compound contained in the polysilicone layer is not particularly limited, and examples thereof include polysiloxane. The method for forming the polysilicone layer is not particularly limited, and examples thereof include coating a coating agent such as a polysiloxane-based coating agent on the back surface of the substrate.

The polymerizable polymer contained in the polymerizable polymer layer is not particularly limited, and examples thereof include acrylic polymers, polyester polymers, and urethane polymers. Of these, acrylic polymers are preferred. The method for forming the polymerizable polymer layer is not particularly limited, and examples thereof include coating a coating agent such as an acrylic polymer coating agent on the back surface of the substrate.

As a method for forming the above-mentioned corona treatment layer, for example, the following method can be cited: using a high-frequency power supply device (AGI-020 manufactured by Kasuga Electric Co., Ltd.), the film is moved back and forth once under the conditions of output 0.24 kW, speed 40 mm/min, and electrode distance 1 mm, thereby applying corona treatment to the back side of the substrate.

The thickness of the easy-adhesion layer is not particularly limited, but the preferred lower limit is 1 nm and the preferred upper limit is 10 μm. By keeping the thickness of the easy-adhesion layer within this range, it is easier to adjust the Fa/Fb ratio, as described below, to a specific range. The preferred lower limit of the thickness of the easy-adhesion layer is 5 nm, and the preferred upper limit is 5 μm.

The thickness of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but the preferred lower limit is 5 μm and the preferred upper limit is 200 μm. By keeping the thickness of the substrate within this range, a semiconductor processing adhesive tape having moderate elasticity and excellent handleability can be produced. The preferred lower limit of the thickness of the substrate of the adhesive tape for semiconductor processing is 10 μm, and the preferred upper limit is 150 μm.

The adhesive constituting the adhesive layer of the adhesive tape for semiconductor processing is not particularly limited and may be either a non-curing adhesive or a curing adhesive. Specifically, examples include rubber adhesives, acrylic adhesives, vinyl alkyl ether adhesives, silicone adhesives, polyester adhesives, polyamide adhesives, urethane adhesives, and styrene-diene block copolymer adhesives. Of these, acrylic adhesives are preferred for excellent heat resistance and ease of adjusting adhesive strength, with curing acrylic adhesives being particularly preferred.

Examples of the aforementioned curable adhesive include photocurable adhesives that crosslink and cure by light irradiation, and thermosetting adhesives that crosslink and cure by heat. Of these, photocurable adhesives are preferred because they are less susceptible to damage to the adherend and can be easily cured. Specifically, the adhesive layer of the adhesive tape for semiconductor processing is preferably a photocurable adhesive layer. Examples of photocurable adhesives include those primarily composed of a polymerizable polymer and containing a photopolymerization initiator. Examples of thermosetting adhesives include those primarily composed of a polymerizable polymer and containing a thermal polymerization initiator.

The polymerizable polymer can be obtained, for example, by pre-synthesizing a (meth)acrylic polymer having a functional group in its molecule (hereinafter referred to as a functional group-containing (meth)acrylic polymer) and reacting it with a compound having a functional group reactive with the functional group and a free radical polymerizable unsaturated bond in its molecule (hereinafter referred to as a functional group-containing unsaturated compound).

The functional group-containing (meth)acrylic polymer can be obtained, for example, by copolymerizing an alkyl acrylate and/or alkyl methacrylate having an alkyl group with 2 to 18 carbon atoms, a functional group-containing monomer, and optionally other modifying monomers copolymerizable with the functional group-containing monomer.

The weight-average molecular weight of the functional group-containing (meth)acrylic polymer is not particularly limited, but is generally between 200,000 and 2,000,000. The weight-average molecular weight can be determined using gel permeation chromatography. More specifically, a dilution of the obtained polymer adjusted to 0.2 wt% with tetrahydrofuran (THF) is filtered through a filter (material: polytetrafluoroethylene; pore size: 0.2 μm). The resulting filtrate is fed to a gel permeation chromatography instrument (Waters 2690 Separations Model or equivalent) and subjected to GPC measurement at a sample flow rate of 1 mL/min and a column temperature of 40°C. The polystyrene-equivalent molecular weight is measured to determine the weight-average molecular weight (Mw). GPC KF-806L (manufactured by Showa Denko K.K., or an equivalent) was used as the column, and a differential refractometer was used as the detector.

Examples of the functional group-containing monomers include carboxyl group-containing monomers such as acrylic acid and methacrylic acid; hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate; and epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate. Examples of the functional group-containing monomers include isocyanate group-containing monomers such as isocyanateethyl acrylate and isocyanateethyl methacrylate; and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.

Examples of the other copolymerizable modifying monomers include various monomers commonly used in (meth)acrylic polymers, such as vinyl acetate, acrylonitrile, and styrene.

To obtain the functional group-containing (meth)acrylic polymer, the starting monomers can be subjected to a free radical reaction in the presence of a polymerization initiator. Conventional methods for subjecting the starting monomers to a free radical reaction, i.e., polymerization methods, can be employed, such as solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, and bulk polymerization. The polymerization initiator used in the free radical reaction to obtain the functional group-containing (meth)acrylic polymer is not particularly limited; examples include organic peroxides and azo compounds. Examples of the organic peroxides include 1,1-bis(tert-hexylperoxy)-3,3,5-trimethylcyclohexane, tert-hexyl peroxytrimethylacetate, tert-butyl peroxytrimethylacetate, 2,5-dimethyl-2,5-bis(2-ethylhexylperoxy)hexane, tert-hexyl peroxy-2-ethylhexanoate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxyisobutyrate, tert-butyl peroxy-3,5,5-trimethylhexanoate, and tert-butyl peroxylaurate. Examples of the azo compounds include azobisisobutyronitrile and azobis(cyclohexanecarbonitrile). These polymerization initiators may be used alone or in combination of two or more.

As the functional group-containing unsaturated compound that reacts with the functional group-containing (meth)acrylic polymer, the same as the functional group-containing monomer described above can be used depending on the functional group of the functional group-containing (meth)acrylic polymer. For example, when the functional group of the functional group-containing (meth)acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used. When the functional group of the functional group-containing (meth)acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group of the functional group-containing (meth)acrylic polymer is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used. When the functional group of the functional group-containing (meth)acrylic polymer is an amino group, an epoxy group-containing monomer is used.

The above-mentioned photocurable adhesive preferably contains a photopolymerization initiator. The above-mentioned photopolymerization initiator can be, for example, activated by irradiation with light of a wavelength of 250 to 800 nm. As such a photopolymerization initiator, for example, acetophenone derivative compounds such as methoxyacetophenone; or benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether; or ketone derivative compounds such as benzil dimethyl ketal and acetophenone diethyl ketal; or phosphine oxide derivative compounds. In addition, bis(η5-cyclopentadienyl)titaniumocene derivative compounds, benzophenone, michler's ketone, chloro-9-oxysulfonium can also be listed. (chlorothioxanthone), dodecyl 9-oxysulfonium , dimethyl 9-oxosulfonium , diethyl 9-oxosulfonium , α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane, etc. These photopolymerization initiators may be used alone or in combination of two or more.

The thermosetting adhesive preferably contains a thermal polymerization initiator. Examples of such thermal polymerization initiators include those that decompose upon heat to generate active free radicals that initiate polymerization and curing. Specific examples include diisophenylpropyl peroxide, di(tertiary butyl) peroxide, tertiary butyl peroxybenzoate, tertiary butyl hydroperoxide, benzoyl peroxide, isopropyl hydroperoxide, diisopropylphenyl hydroperoxide, p-menthane hydroperoxide, and di(tertiary butyl) peroxide. Commercially available thermal polymerization initiators are not particularly limited. Examples include Perbutyl D, Perbutyl H, Perbutyl P, and Perpenta H (all manufactured by NOF Corporation). These thermal polymerization initiators may be used alone or in combination.

The adhesive layer of the adhesive tape for semiconductor processing may further contain a radically polymerizable multifunctional oligomer or monomer. The inclusion of a radically polymerizable multifunctional oligomer or monomer enhances the photocurability and thermocurability of the adhesive layer. The polyfunctional oligomer or monomer is not particularly limited, but preferably has a weight-average molecular weight of 10,000 or less. To achieve efficient three-dimensional reticulation of the adhesive layer by light irradiation or heating, the polyfunctional oligomer or monomer preferably has a weight-average molecular weight of 5,000 or less and contains 2 to 20 radically polymerizable unsaturated bonds within the molecule.

Examples of the polyfunctional oligomers or monomers include trihydroxymethylpropane triacrylate, tetrahydroxymethylmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and their methacrylates. Examples of the polyfunctional oligomers or monomers include 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoacrylates, and their methacrylates. These polyfunctional oligomers or monomers may be used alone or in combination.

The adhesive layer of the semiconductor processing adhesive tape may further contain an inorganic filler such as fumed silica. The inclusion of an inorganic filler enhances the cohesive strength of the adhesive layer, improving both adhesion during dicing and releasability during pickup.

The adhesive layer of the adhesive tape for semiconductor processing preferably contains a crosslinking agent. The inclusion of a crosslinking agent enhances the cohesive strength of the adhesive layer, improving both adhesion during dicing and releasability during pickup. The crosslinking agent is not particularly limited; examples include isocyanate-based crosslinkers, epoxy-based crosslinkers, aziridine-based crosslinkers, and metal chelate-based crosslinkers. Among these, isocyanate-based crosslinkers are preferred for further enhancing adhesion.

The crosslinking agent content is preferably from 0.01 to 20 parts by weight relative to 100 parts by weight of the adhesive constituting the adhesive layer. A crosslinking agent content within this range allows for moderate crosslinking of the adhesive, thereby enhancing adhesion. To further enhance adhesion, the crosslinking agent content preferably has a lower limit of 0.05 parts by weight, an upper limit of 15 parts by weight, a further preferred lower limit of 0.1 parts by weight, and a further preferred upper limit of 10 parts by weight.

The adhesive layer of the adhesive tape for semiconductor processing may also contain known additives such as plasticizers, resins, surfactants, waxes, and microparticle fillers. These additives may be used alone or in combination of two or more.

The gel fraction of the adhesive layer of the adhesive tape for semiconductor processing is preferably at least 20% by weight and no more than 80% by weight. With the gel fraction within this range, the adhesive tape can adhere to the adherend with sufficient adhesion, thereby effectively securing the adherend. To improve adhesion, the gel fraction of the adhesive layer is more preferably at least 30% by weight, and even more preferably no more than 70% by weight. When the adhesive is a curing adhesive, the gel fraction refers to the gel fraction before curing.

The thickness of the adhesive layer of the adhesive tape for semiconductor processing is not particularly limited, but a preferred lower limit is 5 μm and a preferred upper limit is 500 μm. When the thickness of the adhesive layer is within this range, the adhesive layer can be adhered to an adherend with sufficient adhesion, thereby effectively securing the adherend. From the perspective of improving adhesion, the preferred lower limit of the thickness of the adhesive layer is 10 μm, a preferred upper limit is 300 μm, a further preferred lower limit is 15 μm, a further preferred upper limit is 250 μm, and a further preferred upper limit is 200 μm.

Regarding the semiconductor processing laminate of the present invention, the above-mentioned adhesive tape for semiconductor processing and the above-mentioned temporary fixing tape satisfy the following formula (1): 2.0× ^10-3 ≦ (Fa/Fb) ≦ 6.0× ^10-2 (1) In formula (1), Fa represents the peeling force in the 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb represents the peeling force in the 180° direction after the temporary fixing tape is attached to the base surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour.

The above-mentioned Fa represents the adhesion strength of the semiconductor processing adhesive tape to the adherend (made into a standard copper plate), while the above-mentioned Fb represents the adhesion strength of the temporary fixing tape to the substrate surface of the semiconductor processing adhesive tape. When the Fa/Fb ratio is within the above range, the semiconductor processing laminate of the present invention can be easily peeled off when picking up the semiconductor package without compromising the adhesion during cutting. Here, the substrate surface of the semiconductor processing adhesive tape refers to the side of the substrate surface of the semiconductor processing adhesive tape that is not coated with the adhesive layer. Furthermore, the copper plate used as the adherend for the semiconductor processing adhesive tape refers to a copper plate that complies with JIS H3100:2018 (e.g., C1100P manufactured by Engineering Test Service Co., Ltd.) and is selected based on the assumption that it will be used as a conductive surface for a semiconductor package. Furthermore, the "heating at 150°C for one hour" setting is based on the temperature and time applied to the semiconductor processing laminate of the present invention during shielding treatment of a semiconductor package.

If the Fa/Fb ratio is less than 2.0× ^10-3 , it means that the Fa is too small or the Fb is too large. Consequently, for example, the adhesion of the semiconductor processing tape during dicing is insufficient, and the dicing cleaning water penetrates into the interface between the semiconductor package and the semiconductor processing tape, causing the semiconductor processing tape to peel off. If the Fa/Fb ratio exceeds 6.0× ^10-2 , it means that the Fa is too large or the Fb is too small. Consequently, for example, when picking up a semiconductor package, the releasability of the semiconductor processing tape is insufficient, and peeling occurs at the interface between the temporary fixing tape and the semiconductor processing tape, rather than at the interface between the semiconductor package and the semiconductor processing tape, resulting in poor pickup. The preferred upper limit of the above Fa/Fb is 2.0×10 ^-2 .

There are no specific restrictions on the value of Fa. The preferred lower limit is 0.03 N/25 mm, the preferred upper limit is 0.3 N/25 mm, the more preferred lower limit is 0.05 N/25 mm, the more preferred upper limit is 0.2 N/25 mm, and the further preferred lower limit is 0.15 N/25 mm. There are no specific restrictions on the value of Fb. The preferred lower limit is 5 N/25 mm, and the preferred upper limit is 20 N/25 mm.

As a method for measuring the above-mentioned Fa, for example, the following method can be cited. First, the above-mentioned adhesive tape for semiconductor processing is placed on a copper plate (a copper plate that meets JIS H3100:2018, such as C1100P manufactured by Engineering Test Service) in a manner such that its adhesive layer faces a copper plate. A 2 kg rubber roller is moved back and forth once at a speed of 300 mm/minute to adhere the above-mentioned adhesive tape for semiconductor processing to the above-mentioned copper plate. Thereafter, the adhesive tape is allowed to stand at 23°C for 1 hour to prepare a test sample. The test sample after standing is heated in an oven preheated to 150°C for 1 hour. After heating, the test sample is taken out and placed in an environment with a temperature of 23°C and a relative humidity of 50% to be fully cooled. In accordance with JIS Z0237:2009, the peel force of the semiconductor processing adhesive tape was measured at a pulling speed of 300 mm/min in a 180° direction at a temperature of 23°C and a relative humidity of 50% using an automatic stereoscope (Shimadzu Corporation).

As a method for measuring the Fb, for example, the following method can be cited. First, use double-sided adhesive tape (double-sided adhesive tape #3815 manufactured by Sekisui Chemical Industry Co., Ltd. or its equivalent) to fix the surface of the adhesive tape for semiconductor processing having the above-mentioned adhesive layer and the measurement base (SUS plate). Then, place the above-mentioned temporary fixing tape on the adhesive tape for semiconductor processing in such a manner that the base surface of the adhesive tape for semiconductor processing and the adhesive layer of the temporary fixing tape face each other. A 2 kg rubber roller is moved back and forth once at a speed of 300 mm/minute to adhere the above-mentioned adhesive tape for semiconductor processing and the above-mentioned temporary fixing tape. Thereafter, the test sample is prepared by leaving it at 23°C for 1 hour. After standing still, the test specimens were heated in an oven preheated to 150°C for one hour. After heating, the specimens were removed and allowed to cool thoroughly in an environment at 23°C and 50% relative humidity. The peeling force was measured using an automatic stereoscope (Shimadzu Corporation) at 23°C and 50% relative humidity in accordance with JIS Z0237:2009. The temporary fixing tape was peeled off at a pulling speed of 300 mm/min in a 180° direction.

When the adhesive layer of the semiconductor processing adhesive tape is a light-curing adhesive layer, Fa is measured by irradiating the adhesive layer of the semiconductor processing adhesive tape with light to cure the adhesive layer after the tape is attached to a copper plate and before heating at 150°C for 1 hour. An example of a method for irradiating the adhesive layer of the semiconductor processing adhesive tape with light is to irradiate the adhesive layer with 365 nm ultraviolet light from the substrate side using an ultrahigh-pressure mercury ultraviolet irradiator at a cumulative irradiation dose of 3000 mJ/ ^cm² . The irradiation intensity at this time is not particularly limited, but is preferably 50-100 mW/cm ² .

To adjust Fa/Fb within the above range, the specific values of Fa and Fb can be adjusted. To increase Fa/Fb, the value of Fa can be increased or the value of Fb can be decreased. To decrease Fa/Fb, the value of Fa can be decreased or the value of Fb can be increased. Methods for adjusting Fa within the above range include, for example, adjusting the type, composition, and physical properties of the adhesive layer of the adhesive tape for semiconductor processing, as described above. Methods for adjusting the Fb to the above range include, for example, forming the easy-adhesion layer on the back surface of the substrate of the adhesive tape for semiconductor processing, which is the opposite side to the adhesive layer; and adjusting the type, composition, physical properties, etc. of the adhesive layer of the temporary fixing tape as described above.

Next, the adhesive tape for semiconductor processing of the present invention will be described. The adhesive tape for semiconductor processing of the present invention comprises a base material and an adhesive layer laminated on one surface of the base material. The base material and adhesive layer are identical to those of the adhesive tape for semiconductor processing in the laminate for semiconductor processing of the present invention.

The adhesive tape for semiconductor processing of the present invention satisfies the following formula (2): 2.0×10 ^-3 ≦ (Fa/Fb') ≦ 6.0×10 ^-2 (2) In formula (2), Fa represents the peeling force in the 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb' represents the peeling force in the 180° direction after a temporary fixing tape with a bonding force of 7.5 N/25 mm to a SUS plate is attached to the base surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour.

The above Fa/Fb' ratio is the same as the above Fa/Fb ratio. However, the above Fb ratio relates to the temporary fixing tape that constitutes the semiconductor processing laminate of the present invention. In contrast, since the adhesive tape for semiconductor processing of the present invention does not have a temporary fixing tape, the above Fb' ratio relates to a more specific temporary fixing tape with a bonding force of 7.5 N/25 mm to a SUS board and the adhesive tape for semiconductor processing of the present invention. By keeping the above Fa/Fb' ratio within the above range, the adhesive tape for semiconductor processing of the present invention can be easily peeled off when picking up the semiconductor package without compromising the adhesion during cutting.

If the Fa/Fb' ratio is less than 2.0× ^10-3 , it means that the Fa is too small or the Fb' is too large. As a result, for example, the adhesion of the semiconductor processing adhesive tape during dicing is insufficient, and the dicing cleaning water penetrates into the interface between the semiconductor package and the semiconductor processing adhesive tape, causing the semiconductor processing adhesive tape to peel off. If the Fa/Fb' ratio exceeds 6.0× ^10-2 , it means that the Fa is too large or the Fb' is too small. As a result, for example, when picking up the semiconductor package, the releasability of the semiconductor processing adhesive tape is insufficient, and peeling occurs at the interface between the temporary fixing tape and the semiconductor processing adhesive tape, rather than at the interface between the semiconductor package and the semiconductor processing adhesive tape, resulting in poor pickup.

The specific value of the above-mentioned Fb' is not particularly limited, but the preferred lower limit is 5 N/25 mm, and the preferred upper limit is 20 N/25 mm.

The temporary fixing tape with a 7.5 N/25 mm adhesion to the SUS plate is not particularly limited; any tape with a 7.5 N/25 mm adhesion to the SUS plate will suffice. Suitable temporary fixing tapes are those with a silicone adhesive layer. Suitable commercially available products include Kapton (registered trademark) Adhesive Tape 650R#50 (manufactured by Teraoka Corporation). The following method can be used to measure the adhesion of a temporary fixing tape to a SUS plate. First, place the temporary fixing tape on the SUS plate. A 2 kg rubber roller is moved back and forth once on the temporary fixing tape at a speed of 300 mm/minute to bond the temporary fixing tape to the SUS plate. Afterwards, the specimens were left at 23°C for 1 hour to prepare test specimens. The specimens were then peeled off from the temporary fixing tape in a 180° direction using an automatic stereoscope (manufactured by Shimadzu Corporation) in accordance with JIS Z0237:2009. The peeling force was measured at a pulling speed of 300 mm/min at 23°C and a relative humidity of 50%.

The method for producing the adhesive tape for semiconductor processing of the present invention is not particularly limited. For example, the following method can be used: After preparing an adhesive solution constituting the adhesive layer, the solution is applied to the surface of a substrate, which has previously been subjected to backside treatment to form an adhesive layer, on the side opposite the adhesive layer, to form the adhesive layer. The adhesive tape for semiconductor processing of the present invention obtained in this manner is then attached to the conductive surface of a semiconductor package, as needed, or the semiconductor package is cut together with the adhesive tape for semiconductor processing of the present invention and then laminated onto a temporary fixing tape, thereby obtaining the laminate for semiconductor processing of the present invention.

Figure 1 schematically illustrates a cross-sectional view of an example of a semiconductor processing laminate and an adhesive tape for semiconductor processing according to the present invention. The semiconductor processing laminate 1 shown in Figure 1 comprises a temporary fixing tape 3 and an adhesive tape 2 for semiconductor processing laminated on the temporary fixing tape 3. The adhesive tape 2 for semiconductor processing comprises a base material 2b and an adhesive layer 2a laminated on one surface of the base material 2b. The adhesive tape 2 is laminated on the temporary fixing tape 3 such that the base material 2b of the adhesive tape 2 and the adhesive layer (not shown) of the temporary fixing tape 3 are in contact.

In the semiconductor processing laminate and the adhesive tape for semiconductor processing of the present invention, a semiconductor package may be further laminated on the adhesive layer of the adhesive tape. Figure 2 schematically illustrates a cross-sectional view of another example of the semiconductor processing laminate and the adhesive tape for semiconductor processing of the present invention. The semiconductor processing laminate 1 shown in Figure 2 comprises a temporary fixing tape 3 and a semiconductor processing adhesive tape 2 laminated on the temporary fixing tape 3. Furthermore, the semiconductor package 4 is laminated on the adhesive layer 2a of the semiconductor processing adhesive tape 2. The adhesive tape 2 for semiconductor processing is laminated so that the adhesive layer 2a contacts the conductive surface of the semiconductor package 4.

1 and 2 , the semiconductor processing laminate 1 is an example of the semiconductor processing laminate of the present invention, and the semiconductor processing adhesive tape 2 is an adhesive tape constituting an example of the semiconductor processing laminate of the present invention, and is also an example of the semiconductor processing adhesive tape of the present invention.

The semiconductor processing laminate and the semiconductor processing adhesive tape of the present invention are not particularly limited in their applications. Because they can be easily peeled off when picking up semiconductor packages without compromising adhesion during dicing, they are preferably used in semiconductor device manufacturing methods. The semiconductor processing laminate and the semiconductor processing adhesive tape of the present invention are particularly preferably used in shielding treatment of semiconductor packages, and more particularly, in the series of steps from dicing the semiconductor package to shielding treatment of the resulting singulated semiconductor packages. Examples of such shielding treatment steps include IR shielding and electromagnetic shielding, with electromagnetic shielding being particularly preferred.

Furthermore, a method for manufacturing a semiconductor device is also one of the present inventions. The method for manufacturing a semiconductor device cuts a semiconductor package using the adhesive tape for semiconductor processing of the present invention, and forms a metal film on the back and side surfaces of the semiconductor package obtained by cutting, and has the following steps: step (1), attaching the adhesive tape for semiconductor processing to the conductive surface of the semiconductor package; step (2), cutting the semiconductor package to which the adhesive tape for semiconductor processing is attached, and obtaining a semiconductor package having been singulated and a semiconductor device having been singulated. a laminate of a semiconductor processing adhesive tape; a step (3) temporarily fixing the laminate having the singulated semiconductor package and the singulated semiconductor processing adhesive tape on the above-mentioned temporary fixing tape in such a manner that the side of the above-mentioned semiconductor processing adhesive tape is in contact with the temporary fixing tape; a step (4) forming a metal film on the back and side surfaces of the above-mentioned singulated semiconductor package on the above-mentioned temporary fixing tape; and a step (5) peeling off the singulated semiconductor package with the metal film formed on the back and side surfaces from the above-mentioned singulated semiconductor processing adhesive tape and picking it up.

The semiconductor device manufacturing method of the present invention dices a semiconductor package using the semiconductor processing adhesive tape of the present invention and forms a metal film on the back and side surfaces of the individual semiconductor packages obtained by dicing. Figure 3 schematically illustrates an example of the semiconductor device manufacturing method of the present invention. The semiconductor device manufacturing method of the present invention will be described below with reference to Figure 3.

In the method for manufacturing a semiconductor device of the present invention, first, as shown in FIG3(a), step (1) is performed to attach the semiconductor processing adhesive tape 2 to the conductive surface of the semiconductor package 4. The method for attaching the semiconductor processing adhesive tape is not particularly limited, and for example, a method using a bonding machine can be used.

When the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, it is preferred that after the step (1), a step (6) (not shown) of irradiating the adhesive layer of the adhesive tape for semiconductor processing with light is performed. As a method of irradiating the adhesive layer of the adhesive tape for semiconductor processing with light, for example, the following method can be cited: using an ultra-high pressure mercury ultraviolet irradiator, irradiating the adhesive layer with ultraviolet light of 350 to 410 nm from the substrate side. The irradiation intensity at this time is not particularly limited, but is preferably 20 to 100 mW/ ^cm2 . The cumulative irradiation dose is also not particularly limited, but is preferably 300 to 3000 mJ/ ^cm2 .

In the method for manufacturing a semiconductor device of the present invention, as shown in FIG3(b), step (2) is then performed. This step (2) is to cut the semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached, thereby obtaining a laminate having singulated semiconductor packages and singulated semiconductor processing adhesive tape 2. The above-mentioned cutting method is not particularly limited. For example, the following method can be cited: the semiconductor package to which the semiconductor processing adhesive tape is attached is temporarily fixed on a cutting protective tape, the cutting protective tape is mounted on a cutting frame, and singulated using a cutting device. Thereafter, the cutting protective tape is peeled off. The cutting device is not particularly limited. For example, DFD6361 manufactured by DISCO Corporation can be used.

In the method for manufacturing a semiconductor device of the present invention, step (3) is then performed as shown in FIG3 (c). In this step (3), the laminate having the singulated semiconductor package 4 and the singulated semiconductor processing adhesive tape 2 is temporarily fixed on the above-mentioned temporary fixing tape 3 in such a manner that the side of the semiconductor processing adhesive tape 2 is connected to the temporary fixing tape 3.

In the method for manufacturing a semiconductor device of the present invention, step (4) is then performed as shown in FIG3(d). In this step (4), a metal film 5 is formed on the back and side surfaces of the singulated semiconductor package 4 on the temporary fixing tape 3. The method for forming the above-mentioned metal film is not particularly limited. For example, the following method can be cited: forming a film composed of stainless steel, copper, aluminum, gold, silver, zinc, nickel, platinum, chromium, titanium, or alloys or oxides of these metals by sputtering, etc.

In the method for manufacturing a semiconductor device of the present invention, as shown in FIG3(e), step (5) is then performed. This step (5) is to peel off and pick up the singulated semiconductor package 4 having the metal film 5 formed on the back and side surfaces from the singulated semiconductor processing adhesive tape 2. In this way, a singulated semiconductor package having the metal film formed on the back and side surfaces can be obtained. [Effects of the Invention]

The present invention provides a semiconductor processing laminate and an adhesive tape for semiconductor processing that can be easily peeled off when picking up a semiconductor package without damaging the adhesion during cutting. Furthermore, the present invention provides a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

The following examples are given to further illustrate the present invention in detail, but the present invention is not limited to these examples.

(Synthesis of Adhesive Polymer) (1) Synthesis of Adhesive Polymer A A reactor equipped with a thermometer, a stirrer, and a cooling tube was prepared. 93 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth)acrylate, 1 part by weight of acrylic acid as a functional group-containing monomer, 6 parts by weight of hydroxyethyl methacrylate, 0.01 parts by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate were added to the reactor, and the reactor was heated to initiate reflux. Subsequently, 0.01 parts by weight of 1,1-bis(tert-hexylperoxy)-3,3,5-trimethylcyclohexane was added to the reactor as a polymerization initiator, and polymerization was initiated under reflux. Subsequently, 0.01 parts by weight of 1,1-bis(tert-hexylperoxy)-3,3,5-trimethylcyclohexane was added one and two hours after the start of polymerization. Furthermore, 0.05 parts by weight of tert-hexyl peroxytrimethylacetate was added four hours after the start of polymerization, and the polymerization reaction continued. Eight hours after the start of polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer with a solids content of 55% by weight and a weight-average molecular weight of 600,000 was obtained. 3.5 parts by weight of 2-isocyanatoethyl methacrylate was added to 100 parts by weight of the resin solids content of the obtained ethyl acetate solution containing the functional group-containing (meth)acrylic polymer, and the reaction continued to obtain Adhesive Polymer A.

(2) Synthesis of Adhesive Polymer B A reactor equipped with a thermometer, a stirrer, and a cooling tube was prepared. 98 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth)acrylate, 2 parts by weight of hydroxyethyl methacrylate as a functional group-containing monomer, 0.01 parts by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate were added to the reactor, and the reactor was heated to initiate reflux. Subsequently, 0.01 parts by weight of 1,1-bis(tert-hexylperoxy)-3,3,5-trimethylcyclohexane was added to the reactor as a polymerization initiator, and polymerization was initiated under reflux. Subsequently, 0.01 parts by weight of 1,1-bis(tert-hexylperoxy)-3,3,5-trimethylcyclohexane was added one and two hours after the start of polymerization. Furthermore, 0.05 parts by weight of tert-hexyl peroxytrimethylacetate was added four hours after the start of polymerization, and the polymerization reaction continued. Eight hours after the start of polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer with a solids content of 55% by weight and a weight-average molecular weight of 600,000 was obtained. 1 part by weight of 2-isocyanatoethyl methacrylate was added to 100 parts by weight of the resin solids content of the obtained ethyl acetate solution containing the functional group-containing (meth)acrylic polymer, and the reaction was continued to obtain Adhesive Polymer B.

(3) Adhesive polymer C Adhesive polymer C (SK Dyne 1495, manufactured by Soken Chemical Co., Ltd.) was used.

(Back surface treatment of substrate) (1) Treatment A (Silicon dioxide evaporation) A polyethylene terephthalate film with a thickness of 100 μm and silicon dioxide evaporated to a thickness of 50 nm was used as treatment film A.

(2) Treatment B (corona treatment) A 100 μm thick polyethylene terephthalate film (Lumirror S10 manufactured by Toray Industries, Inc.) was subjected to a corona treatment using a high-frequency power supply device (AGI-020 manufactured by Kasuga Electric Co., Ltd.) with a single reciprocating motion at an output of 0.24 kW, a speed of 40 mm/min, and an electrode distance of 1 mm. Treated film B was obtained.

(3) Treatment C (Orgatix PC620) A titanium oligomer coating agent (Orgatix PC620 manufactured by Matsumoto Fine Chemical Co., Ltd.) was applied to a 100 μm thick polyethylene terephthalate film (Lumirror S10 manufactured by Toray Industries, Ltd.) to a thickness of 300 nm to produce treatment film C.

(4) Treatment D (ATO) A polyethylene terephthalate film with a thickness of 100 μm and a surface coating of 300 nm thick antimony tin oxide was used as treatment film D.

(5) Treatment E (Colcoat N103X) A polysiloxane coating agent (Colcoat N103X manufactured by Colcoat) was applied to a 100 μm thick polyethylene terephthalate film (Lumirror S10 manufactured by Toray Industries, Inc.) to a thickness of 300 nm to produce treatment film E.

(6) Treatment F (Polyment NK380) An acrylic polymer coating agent (Polyment NK380 manufactured by Nippon Catalyst Co., Ltd.) was applied to a 100 μm thick polyethylene terephthalate film (Lumirror S10 manufactured by Toray Industries, Ltd.) to a thickness of 300 nm to produce treatment film F.

(7) Treatment G (Aluminum Oxide Evaporation) A polyethylene terephthalate film with a thickness of 100 μm and a surface layer of aluminum oxide evaporated to a thickness of 10 nm was used as treatment film G.

(Examples 1 to 10 and Comparative Examples 1 to 3) (1) Preparation of Adhesive An adhesive modifier, a crosslinking agent, and a photopolymerization initiator were mixed with 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive polymer obtained above according to Table 1 to obtain an ethyl acetate solution of the adhesive constituting the adhesive layer. Furthermore, the following compounds were used for blending. Adhesion modifier: EBECRYL 350, manufactured by Daicel-Allnex Co., Ltd. Crosslinking agent A: Coronate L, manufactured by Nippon Polyurethane Industries, Ltd. Crosslinking agent B: Tetrad X, manufactured by Mitsubishi Gas Chemical Co., Ltd. Photopolymerization initiator: Esacure One, manufactured by Nihon Siber Hegner Co., Ltd.

(2) Production of Adhesive Tape for Semiconductor Processing The obtained adhesive in ethyl acetate solution was applied to the substrate subjected to backside treatment using a scraper to a dry film thickness of 100 μm. The film was then left at room temperature for 10 minutes. The applied solution was then dried by heating at 110°C for 5 minutes in an oven preheated to 110°C to obtain an adhesive tape for semiconductor processing. A 50 μm thick polyethylene terephthalate film was attached to the adhesive layer side of the obtained adhesive tape for semiconductor processing as a spacer to protect the adhesive layer until use.

(3) Determination of Fa The surface of a 1 mm thick copper plate (C1100P, JIS H3100) was cleaned with ethanol and thoroughly dried. A 2 kg roller was used to apply a semiconductor processing adhesive tape, which had been previously cut into pieces with a width of 25 mm and a length of 10 cm, to the copper plate to obtain a laminate. In Examples 1 to 10 and Comparative Examples 1 and 3 in which the semiconductor processing adhesive tape was a light-curing type, an ultrahigh-pressure mercury ultraviolet irradiator was used to irradiate the adhesive layer with 365 nm ultraviolet light from the substrate side for 30 seconds to cure the adhesive layer. The irradiation intensity was adjusted so that the irradiation intensity became 100 mW/ ^cm2 . The laminate was then heated for one hour in an oven preheated to 150°C. In Comparative Example 2, which used a non-photocurable semiconductor processing adhesive tape, the laminate was heated for one hour in an oven heated to 150°C without UV irradiation. After the prescribed time, the laminate was removed and allowed to cool thoroughly in an environment at 23°C and 50% relative humidity. Using an automatic stereogrammer (Shimadzu Corporation), the semiconductor processing adhesive tape was peeled off in a 180° direction at a pulling speed of 300 mm/min at 23°C and 50% relative humidity, and the peeling force, Fa, was measured.

(4) Measurement of Fb Kapton (registered trademark) adhesive tape 650R#50 manufactured by Teraoka Corporation was used as a temporary fixing tape. The adhesion force of the temporary fixing tape to the SUS plate (surface polished BA treatment) was measured to be 7.5 N/25 mm. The adhesion force of the temporary fixing tape to the SUS plate (surface polished BA treatment) was measured as follows. The temporary fixing tape was attached to the SUS plate by reciprocating a 2 kg roller in an environment at a temperature of 23°C and a relative humidity of 50%, and a laminate was obtained. After curing for 60 minutes at the same temperature and humidity, the temporary fixing tape was peeled off in a 180° direction using an automatic stereogrammer (Shimadzu Corporation) at a tensile speed of 300 mm/min at the same temperature and humidity, and the peeling force was measured.

Using double-sided tape (Sekisui Chemical Co., Ltd., double-sided tape 560), the side of the substrate opposite the back-treated surface before the adhesive layer was applied was attached to a copper plate (C1100P). A 2 kg roller was used to reciprocate once, and a temporary fixing tape, pre-cut to a width of 25 mm and a length of 10 cm, was attached to the back-treated surface of the substrate to form a laminate. The laminate was heated in an oven preheated to 150°C for one hour. After the specified time, the laminate was removed and allowed to cool thoroughly in an environment at 23°C and a relative humidity of 50%. Using an automatic stereoscope (Shimadzu Corporation), the temporary fixing tape was peeled off at a pulling speed of 300 mm/min in a 180° direction at a temperature of 23°C and a relative humidity of 50%. The peeling force Fb was measured.

<Evaluation> The adhesive tapes for semiconductor processing obtained in the Examples and Comparative Examples were evaluated using the following method. The results are shown in Table 1.

(1) Evaluation of the Cutting Process The steps shown in (a1) to (a3) of FIG4 were performed as follows. The semiconductor processing adhesive tape 2 was attached to the surface of the copper-clad multilayer substrate 7 (CCL-EL190T/GEPL-190T manufactured by Mitsubishi Gas Chemical Co., Ltd.) having the copper foil 7a (FIG. 4 (a1)). In Examples 1 to 10 and Comparative Examples 1 and 3 in which the semiconductor processing adhesive tape 2 was a light-curing type, an ultrahigh-pressure mercury ultraviolet irradiator was used to irradiate the adhesive layer 2a with 365 nm ultraviolet light from the substrate 2b side for 30 seconds to cure the adhesive layer 2a. The irradiation intensity was adjusted so that the irradiation intensity became 100 mW/ ^cm2 . The copper-clad multilayer substrate 7, with the semiconductor processing adhesive tape 2 attached, was temporarily fixed to the dicing protective tape 8 (Elegrip UPH-1510M4, manufactured by Denka) with its side in contact. The substrate was then mounted on a dicing frame 9 (Figure 4(a2)). Using a dicing device (DFD6361, manufactured by DISCO), the copper-clad multilayer substrate 7, with the semiconductor processing adhesive tape 2 attached, was singulated (chipped) into 10 mm square pieces (Figure 4(a3)).

The interface between the singulated copper-clad multilayer substrate 7 and the semiconductor processing adhesive tape 2 was observed under a microscope. A score of ◎ indicated that the dicing water did not penetrate the interface or that the penetration distance of the dicing water was less than 0.5 mm. A score of ○ indicated that the penetration distance of the dicing water was between 0.5 mm and less than 1 mm. A score of × indicated that the penetration distance of the dicing water was greater than 1 mm.

(2) Pickup process evaluation is as follows, and the step shown in (a4) of Figure 4 is performed. After singulation as shown in Figure 4 (a3), a 365 nm ultraviolet irradiator is used to irradiate the dicing protective tape 8 from the side of the uncoated copper-clad multilayer substrate 7 for 10 seconds to harden the dicing protective tape 8. The irradiation intensity is adjusted so that the irradiation intensity becomes 50 mW/ ^cm2 . Thereafter, the dicing protective tape 8 is peeled off. The resulting singulated copper-clad laminate substrate 7 is temporarily fixed to the temporary fixing tape 3 (Kapton (registered trademark) adhesive tape 650R#50 manufactured by Teraoka Corporation) by connecting the semiconductor processing adhesive tape 2 side to the temporary fixing tape 3, and then re-mounted on the cutting frame 9 (Figure 4 (a4)). The singulated copper-clad laminate substrate 7 and the cutting frame 9 are heated together in an oven preheated to 150°C for 1 hour. After the specified time, the singulated copper-clad laminate substrate 7 and the cutting frame 9 are removed and placed in an environment with a temperature of 23°C and a relative humidity of 50% to fully cool.

Using a die bonder (Bestem D02, manufactured by Canon Machinery), the singulated copper-clad multilayer substrates 7 were picked up. The case where the singulated copper-clad multilayer substrates 7 were peeled off at the interface with the semiconductor processing adhesive tape 2, allowing for pickup with a yield of 99% or higher, was marked as ◎; the case where the yield was 90% or higher but less than 99% was marked as ○; and the case where the yield was less than 90% was marked as ×.

(3) Comprehensive evaluation A case where both the cutting process evaluation and the picking process evaluation were rated as ○ or higher was marked as ○, and a case where either the cutting process evaluation or the picking process evaluation was rated as × was marked as ×.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Comparative example 1 Comparative example 2 Comparative example 3 Adhesive tape for semiconductor processing Adhesive layer Adhesive polymer A 100 - 100 100 - - 100 100 - - 100 - - Adhesive polymer B - 100 - - 100 100 - - 100 100 - - 100 Adhesive polymer C - - - - - - - - - - - 100 - Adhesion modifier 30 - 10 10 10 10 10 30 - - 50 - - Crosslinker A 0.7 0.3 0.7 0.7 0.3 0.3 0.7 0.7 0.3 0.3 0.7 - 0.3 Crosslinker B - - - - - - - - - - - 3 - Photopolymerization initiator 1 1 1 1 1 1 1 1 1 1 1 - 1 substrate Backside processing Process A Process B Process C Processing D Processing E Processing F Processing G Process C Process B Process C Process A Process B Unprocessed Fa(N/25 mm) 0.03 0.3 0.1 0.1 0.15 0.15 0.1 0.03 0.3 0.3 0.02 0.5 0.3 Fb(N/25 mm) 15 5 11 8 8 7 8 11 5 11 15 5 4 Fa/Fb 2.0× ^10-3 6.0× ^10-2 9.1×10 ^-3 1.3× ^10-2 1.9× ^10-2 2.1×10 ^-2 1.3× ^10-2 2.7× ^10-3 6.0× ^10-2 2.7× ^10-2 1.3× ^10-3 1.0× ^10-1 7.5× ^10-2 Reviews Picking process evaluation ◎ ○ ◎ ○ ○ ○ ○ ◎ ○ ○ ◎ × × Fb interface peeling Fb interface peeling Cutting process evaluation ○ ◎ ○ ○ ◎ ◎ ○ ○ ◎ ◎ × ◎ ◎ Comprehensive judgment ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ × × × [Industrial Availability]

The present invention provides a semiconductor processing laminate and an adhesive tape for semiconductor processing that can be easily peeled off when picking up a semiconductor package without damaging the adhesion during cutting. Furthermore, the present invention provides a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

1: Semiconductor processing laminate 2: Semiconductor processing adhesive tape 2a: Adhesive layer 2b: Substrate 3: Temporary fixing tape 4: Semiconductor package 5: Metal film 6: Pickup needle 7: Copper-clad laminate substrate 7a: Copper foil 8: Cutting protective tape 9: Cutting frame

[Figure 1] is a schematic cross-sectional view of one example of the multilayer body for semiconductor processing and the adhesive tape for semiconductor processing of the present invention. [Figure 2] is a schematic cross-sectional view of another example of the multilayer body for semiconductor processing and the adhesive tape for semiconductor processing of the present invention. [Figure 3] (a) to (e) are schematic views of one example of a method for manufacturing a semiconductor device of the present invention. [Figure 4] (a1) to (a4) are schematic views of the steps in the evaluation of the dicing process and the pick-up process of the adhesive tape for semiconductor processing obtained in the Examples and Comparative Examples.

Claims (9)

A semiconductor processing laminate comprises a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape, wherein the temporary fixing tape comprises at least an adhesive layer, the adhesive tape for semiconductor processing comprises a base material and an adhesive layer laminated on one surface of the base material, the base material of the adhesive tape for semiconductor processing and the adhesive layer of the temporary fixing tape being in contact with each other, and the adhesive tape for semiconductor processing and the temporary fixing tape satisfy the following formula (1): 2.0× ^10-3 ≤(Fa/Fb) ≤6.0× ^10-2 (1) In formula (1), Fa represents the peeling force in the 180° direction after the semiconductor processing adhesive tape is attached to the copper plate and heated at 150°C for 1 hour, and Fb represents the peeling force in the 180° direction after the temporary fixing tape is attached to the substrate surface of the semiconductor processing adhesive tape and heated at 150°C for 1 hour. The semiconductor processing laminate of claim 1, wherein the adhesive layer of the adhesive tape for semiconductor processing is a light-curing adhesive layer. The semiconductor processing laminate according to claim 1 or 2, wherein the temporary fixing tape comprises a substrate and a polysilicone adhesive layer laminated on one surface of the substrate, the substrate of the adhesive tape for semiconductor processing having an easy-to-adhesive layer on a surface opposite to the adhesive layer, and the easy-to-adhesive layer is a SiOx layer, a metal oxide layer, an organometallic compound layer, a polysilicone compound layer, a polymerizable polymer layer, a corona treatment layer, or a plasma treatment layer. An adhesive tape for semiconductor processing comprises a substrate and an adhesive layer laminated on one surface of the substrate, wherein the adhesive tape satisfies the following formula (2): 2.0× ^10-3 ≦(Fa/Fb') ≦6.0× ^10-2 (2) In formula (2), Fa represents the peeling force in a 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb' represents the peeling force in a 180° direction after a temporary fixing tape having a bonding force of 7.5N/25mm to a SUS plate is attached to the substrate surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour. The adhesive tape for semiconductor processing according to claim 4, wherein the substrate has an easy-adhesion layer on the surface opposite to the adhesive layer. In the adhesive tape for semiconductor processing according to claim 5, the easy-adhesion layer is a SiOx layer, a metal oxide layer, an organometallic compound layer, a polysilicon oxide layer, a polymerizable polymer layer, a corona treatment layer, or a plasma treatment layer. For example, the adhesive tape for semiconductor processing as claimed in claim 4, 5, or 6 is used for shielding treatment of semiconductor packaging. A method for manufacturing a semiconductor device, wherein a semiconductor package using the adhesive tape for semiconductor processing according to claim 4, 5, 6 or 7 is cut, and a metal film is formed on the back and side surfaces of the semiconductor package obtained by cutting, and the method comprises the following steps: step (1), attaching the adhesive tape for semiconductor processing to the conductive surface of the semiconductor package; step (2), cutting the semiconductor package to which the adhesive tape for semiconductor processing is attached, and obtaining a semiconductor package having the semiconductor package and the adhesive tape for semiconductor processing having been cut. a laminate; step (3) temporarily fixing the laminate having the singulated semiconductor package and the singulated semiconductor processing adhesive tape on the temporary fixing tape by contacting the side of the singulated semiconductor processing adhesive tape with the temporary fixing tape; step (4) forming a metal film on the back and side of the singulated semiconductor package on the temporary fixing tape; and step (5) peeling off the singulated semiconductor package with the metal film formed on the back and side from the singulated semiconductor processing adhesive tape and picking it up. The method for manufacturing a semiconductor device according to claim 8 includes, after the above-mentioned step (1), a step (6) of irradiating the above-mentioned adhesive layer of the above-mentioned adhesive tape for semiconductor processing with light.