TWI900880B - Method for manufacturing a die-cut-die-bond integrated tape, and method for manufacturing a semiconductor device - Google Patents
Method for manufacturing a die-cut-die-bond integrated tape, and method for manufacturing a semiconductor deviceInfo
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- TWI900880B TWI900880B TW112130989A TW112130989A TWI900880B TW I900880 B TWI900880 B TW I900880B TW 112130989 A TW112130989 A TW 112130989A TW 112130989 A TW112130989 A TW 112130989A TW I900880 B TWI900880 B TW I900880B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- H10P54/00—
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- H10P72/7402—
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- H10W72/071—
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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- H10P72/7416—
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- H10W72/013—
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- H10W72/073—
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- H10W72/075—
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- H10W72/884—
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- H10W74/00—
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- H10W90/734—
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- H10W90/754—
Landscapes
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Adhesive Tapes (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Medicinal Preparation (AREA)
- Laminated Bodies (AREA)
Abstract
本發明揭示一種黏著片的製造方法,包括:準備黏著片前驅物的步驟,所述黏著片前驅物具有基材及設置於基材上的黏著劑層;以及對黏著片前驅物中的黏著劑層的與基材相反一側的面實施電漿處理的步驟。The present invention discloses a method for manufacturing an adhesive sheet, comprising: preparing an adhesive sheet pre-coat having a substrate and an adhesive layer disposed on the substrate; and performing a plasma treatment on a side of the adhesive layer in the adhesive sheet pre-coat opposite to the substrate.
Description
本發明是有關於一種黏著片的製造方法、切晶-黏晶一體型帶的製造方法、半導體裝置的製造方法、黏著劑的處理方法、被黏著體的固定方法及被黏著體的剝離方法。The present invention relates to a method for manufacturing an adhesive sheet, a method for manufacturing a die-cut-and-bond integrated tape, a method for manufacturing a semiconductor device, a method for processing an adhesive, a method for fixing an adherend, and a method for peeling an adherend.
黏著劑用於工業領域的各種用途中。於工業上,通常藉由調整交聯密度來控制黏著力(由交聯密度等引起的黏著劑自身的體(bulk)特性)。Adhesives are used in a variety of industrial applications. In industry, the adhesion force is often controlled by adjusting the crosslink density (bulk properties of the adhesive itself, such as crosslink density).
另一方面,已知有藉由對被黏著體實施表面處理來提高被黏著體與黏著劑的黏著性的方法。例如,於專利文獻1中記載有藉由對合成樹脂製品(被黏著體)實施電漿處理,從而合成樹脂製品與塗膜的黏著性提高。另外,於專利文獻2中記載有:於黏著片中,藉由對塑膠膜基材(被黏著體)實施電漿處理等而可提高塑膠膜基材表面對黏著劑層的錨固性。該些專利文獻中,就提高黏著性的觀點而言,均揭示有對被黏著體實施表面處理。 [現有技術文獻] [專利文獻] Meanwhile, methods are known for improving the adhesion between an adherend and an adhesive by performing surface treatment on the adherend. For example, Patent Document 1 describes improving the adhesion between a synthetic resin product (adherend) and a coating film by performing plasma treatment on the adherend. Furthermore, Patent Document 2 describes improving the anchoring properties of the plastic film substrate (adherend) surface to the adhesive layer in an adhesive sheet by performing plasma treatment on the plastic film substrate. These patent documents all disclose surface treatment of the adherend from the perspective of improving adhesion. [Prior Art Documents] [Patent Documents]
專利文獻1:日本專利特開昭59-100143號公報 專利文獻2:日本專利特開2011-068718號公報 Patent Document 1: Japanese Patent Publication No. 59-100143 Patent Document 2: Japanese Patent Publication No. 2011-068718
[發明所欲解決之課題] 但是,現有的黏著劑於黏著力的方面尚有改善的餘地。因此,本發明的主要目的在於提供一種黏著片的製造方法,其能夠製造具有黏著力優異的黏著劑層的黏著片。 [解決課題之手段] [Problem to be Solved by the Invention] However, existing adhesives still have room for improvement in terms of adhesion. Therefore, the main object of the present invention is to provide a method for producing an adhesive sheet that can produce an adhesive layer having excellent adhesion. [Means for Solving the Problem]
作為被黏著體與黏著劑的黏著性的影響因素,除了黏著劑的黏著力(黏著劑自身的體特性)以外,亦有黏著劑相對於被黏著體的親和容易度(潤濕性)。但是,根據本發明者等人的研究而判明:於調整黏著劑的交聯密度來控制黏著劑的黏著力的方法中,黏著力與潤濕性存在所謂的權衡(trade off)的關係。例如,若以黏著力提高的方式調整交聯密度,則顯示出黏著劑對被黏著體的潤濕性下降的傾向。並且,基於該見解進一步研究的結果發現,藉由對黏著劑層實施電漿處理而非對被黏著體實施電漿處理,可降低被處理面的接觸角,提高黏著力,從而完成本發明。Factors influencing the adhesion between an adherend and an adhesive include not only the adhesive's tack (the adhesive's inherent physical properties) but also its affinity for the adherend (its wettability). However, research by the present inventors has revealed that when controlling the adhesive's tack by adjusting its crosslink density, there is a so-called trade-off between tack and wettability. For example, adjusting the crosslink density to increase tack tends to decrease the adhesive's wettability for the adherend. Furthermore, further research based on this insight revealed that by plasma treating the adhesive layer rather than the adherend, the contact angle of the treated surface can be reduced and the adhesion can be improved, thus completing the present invention.
本發明的一方面提供一種黏著片的製造方法,包括:準備黏著片前驅物的步驟,所述黏著片前驅物具有基材及設置於基材上的黏著劑層;以及對黏著片前驅物中的黏著劑層的與基材相反一側的面實施電漿處理的步驟。One aspect of the present invention provides a method for manufacturing an adhesive sheet, comprising: preparing an adhesive sheet precursor having a substrate and an adhesive layer disposed on the substrate; and performing a plasma treatment on a side of the adhesive layer in the adhesive sheet precursor opposite to the substrate.
電漿處理可為使用大氣壓電漿的電漿處理。電漿處理的處理溫度可低於基材的熔點或黏著劑層的熔點中任一較低者的溫度。The plasma treatment may be performed using atmospheric pressure plasma. The treatment temperature of the plasma treatment may be lower than the lower melting point of the substrate or the melting point of the adhesive layer.
黏著片的製造方法可進而包括於已實施電漿處理的黏著劑層的與基材相反一側的面上貼附保護材的步驟。保護材可為貼附於已實施電漿處理的黏著劑層一側的面藉由電漿處理進行了處理者。The method for manufacturing an adhesive sheet may further include the step of attaching a protective material to the surface of the plasma-treated adhesive layer opposite to the substrate. The protective material may be a material that has been treated by plasma treatment and is attached to the surface of the plasma-treated adhesive layer.
於另一方面,本發明提供一種藉由所述製造方法而獲得的黏著片。In another aspect, the present invention provides an adhesive sheet obtained by the manufacturing method.
於又一方面,本發明提供一種切晶-黏晶一體型帶的製造方法,包括:對於藉由所述製造方法而獲得的黏著片,於已實施電漿處理的黏著劑層的與基材相反一側的面上形成接著劑層的步驟。In another aspect, the present invention provides a method for manufacturing a die-cut and die-bond tape, comprising: forming an adhesive layer on the surface of the plasma-treated adhesive layer on the side opposite to the substrate of the adhesive sheet obtained by the manufacturing method.
於又一方面,本發明提供一種藉由所述製造方法而獲得的切晶-黏晶一體型帶。In another aspect, the present invention provides a die-cut and die-bonded ribbon obtained by the manufacturing method.
於又一方面,本發明提供一種半導體裝置的製造方法,包括:將藉由所述製造方法而獲得的切晶-黏晶一體型帶的接著劑層貼附於半導體晶圓的步驟;將半導體晶圓、接著劑層及已實施電漿處理的黏著劑層單片化的步驟;自已實施電漿處理的所述黏著劑層拾取附著有接著劑層的半導體元件的步驟;以及經由接著劑層,將半導體元件接著於半導體元件搭載用支撐基板的步驟。On the other hand, the present invention provides a method for manufacturing a semiconductor device, comprising: attaching an adhesive layer of a die-cut and die-bonded tape obtained by the manufacturing method to a semiconductor wafer; singulating the semiconductor wafer, the adhesive layer, and the plasma-treated adhesive layer; picking up a semiconductor element to which the adhesive layer is attached from the plasma-treated adhesive layer; and bonding the semiconductor element to a supporting substrate for mounting the semiconductor element via the adhesive layer.
於又一方面,本發明提供一種黏著劑的處理方法,包括:對黏著劑實施電漿處理的步驟。電漿處理可為使用大氣壓電漿的電漿處理。電漿處理的處理溫度可低於黏著劑的熔點。In another aspect, the present invention provides a method for treating an adhesive, comprising: performing a plasma treatment on the adhesive. The plasma treatment may be performed using atmospheric pressure plasma. The treatment temperature of the plasma treatment may be lower than the melting point of the adhesive.
於又一方面,本發明提供一種被黏著體的固定方法,包括:經由藉由所述方法進行了處理的黏著劑,將第二被黏著體貼附於第一被黏著體的步驟。另外,於又一方面,本發明提供一種被黏著體的剝離方法,包括:利用水來對藉由所述方法進行了固定的被黏著體的第一被黏著體與黏著劑的界面或第二被黏著體與黏著劑的界面的至少一者進行處理,將第一被黏著體及第二被黏著體剝離的步驟。 [發明的效果] In another aspect, the present invention provides a method for securing an adherend, comprising: attaching a second adherend to a first adherend via an adhesive treated by the method. Furthermore, in another aspect, the present invention provides a method for peeling an adherend, comprising: treating at least one of the interface between the first adherend and the adhesive or the interface between the second adherend and the adhesive, with water, to peel the first and second adherends. [Effects of the Invention]
根據本發明,可提供一種黏著片的製造方法,其能夠製造具有黏著力優異的黏著劑層的黏著片。另外,根據本發明,可提供一種使用藉由此種製造方法而獲得的黏著片的切晶-黏晶一體型帶的製造方法。另外,根據本發明,可提供一種使用藉由此種製造方法而獲得的切晶-黏晶一體型帶的半導體裝置製造方法。進而,根據本發明,可提供一種黏著劑的處理方法、被黏著體的固定方法及被黏著體的剝離方法。The present invention provides a method for manufacturing an adhesive sheet capable of producing an adhesive layer having excellent adhesive strength. Furthermore, the present invention provides a method for manufacturing a cut-and-bond tape using the adhesive sheet obtained by this manufacturing method. Furthermore, the present invention provides a method for manufacturing a semiconductor device using the cut-and-bond tape obtained by this manufacturing method. Furthermore, the present invention provides an adhesive processing method, an adherend fixing method, and an adherend removal method.
以下,適宜參照圖式來對本發明的實施形態進行說明。但本發明並不限定於以下實施形態。以下實施形態中,除特別明示的情況以外,其構成要素(亦包含步驟等)並非必需。各圖中的構成要素的大小為概念性的大小,構成要素間的大小的相對關係並不限定於各圖所示的關係。The following description will describe embodiments of the present invention with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. Except where otherwise indicated, the components (including steps, etc.) in the following embodiments are not required. The sizes of the components in the drawings are conceptual, and the relative sizes of the components are not limited to those shown in the drawings.
本說明書中的數值及其範圍亦同樣如此,並非限制本發明者。本說明書中,使用「~」來表示的數值範圍表示包含「~」的前後所記載的數值分別作為最小值及最大值的範圍。於本說明書中階段性地記載的數值範圍內,一數值範圍所記載的上限值或下限值亦可替換成另一階段記載的數值範圍的上限值或下限值。另外,於本說明書中所記載的數值範圍內,該數值範圍的上限值或下限值可替換成實施例中所示的值。The same applies to the numerical values and their ranges in this specification, which do not limit the present invention. In this specification, numerical ranges indicated by "~" indicate a range that includes the numerical values listed before and after the "~" as the minimum and maximum values, respectively. Within numerical ranges listed at different stages in this specification, the upper or lower limit of one numerical range may be replaced by the upper or lower limit of another numerical range listed at a different stage. Additionally, within numerical ranges listed in this specification, the upper or lower limit of the numerical range may be replaced by the values shown in the examples.
於本說明書中,(甲基)丙烯酸酯是指丙烯酸酯或與其對應的甲基丙烯酸酯。In this specification, (meth)acrylate refers to acrylate or its corresponding methacrylate.
[黏著片的製造方法] 圖1(a)~圖1(d)是示意性表示黏著片的製造方法的一實施形態的剖面圖。本實施形態的黏著片的製造方法包括:準備具有基材及設置於基材上的黏著劑層的黏著片前驅物的步驟(黏著片前驅物的準備步驟);以及對黏著片前驅物中的黏著劑層的與基材相反一側的面實施電漿處理的步驟(電漿處理的實施步驟)。本實施形態的黏著片的製造方法可進而包括於已實施電漿處理的黏著劑層的與基材相反一側的面上貼附保護材的步驟(保護材的配置步驟)。 [Adhesive Sheet Manufacturing Method] Figures 1(a) to 1(d) are cross-sectional views schematically illustrating one embodiment of a method for manufacturing an adhesive sheet. This method includes: preparing an adhesive sheet precursor comprising a substrate and an adhesive layer disposed on the substrate (adhesive sheet precursor preparation step); and plasma-treating the surface of the adhesive layer in the adhesive sheet precursor opposite to the substrate (plasma treatment step). This method may further include attaching a protective material to the plasma-treated surface of the adhesive layer opposite to the substrate (protective material placement step).
<黏著片前驅物的準備步驟> 於本步驟中,準備作為電漿處理的對象的黏著片前驅物100(參照圖1(a))。黏著片前驅物100具有基材10、及設置於基材10上的黏著劑層20。 <Adhesive Sheet Precursor Preparation Step> In this step, an adhesive sheet precursor 100 (see Figure 1(a) ) is prepared as the target for plasma treatment. The adhesive sheet precursor 100 includes a substrate 10 and an adhesive layer 20 disposed on the substrate 10.
基材10只要為具有較藉由電漿處理而產生的熱更高的熔點(或者分解點或軟化點)者,則並無特別限制,可使用在黏著劑的領域中所使用的基材膜。基材膜較佳為於黏晶步驟中能夠擴張(expand)。作為此種基材膜,例如可列舉:聚對苯二甲酸乙二酯膜等聚酯系膜;聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚乙酸乙烯酯膜等聚烯烴系膜;聚氯乙烯膜、聚醯亞胺膜等塑膠膜等。基材10可對供形成黏著劑層20的面實施電暈處理等表面處理。The substrate 10 is not particularly limited, as long as it has a melting point (or decomposition point or softening point) higher than the heat generated by the plasma treatment. Any substrate film used in the adhesive field can be used. Preferably, the substrate film is capable of expanding during the die bonding step. Examples of such substrate films include polyester films such as polyethylene terephthalate films; polyolefin films such as polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, and polyvinyl acetate films; and plastic films such as polyvinyl chloride films and polyimide films. The surface of the substrate 10 on which the adhesive layer 20 is to be formed may be subjected to surface treatment such as a corona treatment.
黏著劑層20是包含黏著劑成分的層。構成黏著劑層20的黏著劑成分只要為具有較藉由電漿處理而產生的熱更高的熔點(或者分解點或軟化點)者,則並無特別限制,較佳為於室溫(25℃)下具有黏著力,且對積層於黏著劑層20上的層(例如後述的接著劑層)具有密接力者。構成黏著劑層20的黏著劑成分亦可含有基體樹脂(base resin)。作為基體樹脂,例如可列舉丙烯酸系樹脂、合成橡膠、天然橡膠、聚醯亞胺樹脂等。就減少黏著劑成分的殘膠的觀點而言,基體樹脂較佳為具有可與後述的交聯劑等反應的羥基、羧基等官能基。基體樹脂可為藉由紫外線、放射線等高能量射線而硬化的樹脂或者藉由熱而硬化的樹脂。基體樹脂較佳為藉由高能量射線而硬化者,更佳為藉由紫外線而硬化者(紫外線硬化型基體樹脂)。The adhesive layer 20 is a layer containing an adhesive component. The adhesive component constituting the adhesive layer 20 is not particularly limited, as long as it has a melting point (or decomposition point or softening point) higher than the heat generated by the plasma treatment. Preferably, it exhibits adhesion at room temperature (25°C) and provides strong adhesion to layers deposited on the adhesive layer 20 (e.g., the adhesive layer described below). The adhesive component constituting the adhesive layer 20 may also contain a base resin. Examples of base resins include acrylic resins, synthetic rubbers, natural rubbers, and polyimide resins. From the perspective of reducing adhesive residue, the base resin preferably has functional groups such as hydroxyl and carboxyl groups that react with the crosslinking agent described below. The base resin can be cured by high-energy radiation such as ultraviolet rays or radioactive radiation, or by heat. The base resin is preferably cured by high-energy radiation, and more preferably by ultraviolet rays (UV-curing base resin).
於使用藉由高能量射線而硬化的樹脂作為基體樹脂的情況下,亦可視需要而併用光聚合起始劑。光聚合起始劑例如可列舉:芳香族酮化合物、安息香醚化合物、苯偶醯化合物、酯化合物、吖啶化合物、2,4,5-三芳基咪唑二聚物等。When using a resin that cures with high-energy radiation as the base resin, a photopolymerization initiator may be used as needed. Examples of photopolymerization initiators include aromatic ketone compounds, benzoin ether compounds, benzyl compounds, ester compounds, acridine compounds, and 2,4,5-triarylimidazole dimers.
為了調整黏著力,黏著劑成分亦可含有能夠與基體樹脂的官能基形成交聯結構的交聯劑。交聯劑較佳為具有選自由環氧基、異氰酸酯基、氮丙啶基及三嗪基所組成的群組中的至少一種官能基。交聯劑可單獨使用一種,亦可組合使用兩種以上。To adjust adhesion, the adhesive component may also contain a crosslinking agent capable of forming a crosslinked structure with the functional groups of the base resin. The crosslinking agent preferably has at least one functional group selected from the group consisting of an epoxy group, an isocyanate group, an aziridine group, and a triazine group. A single crosslinking agent may be used alone, or a combination of two or more may be used.
為了維持由電漿處理所帶來的效果,有效的是調整交聯劑的含量。相對於基體樹脂100質量份,交聯劑的含量較佳為5質量份以上,更佳為7質量份以上,進而佳為10質量份以上。若相對於基體樹脂100質量份而交聯劑的含量為5質量份以上,則有可抑制由電漿處理所帶來的效果衰減的傾向。相對於基體樹脂100質量份,交聯劑的含量可為30質量份以下。若相對於基體樹脂100質量份而交聯劑的含量為30質量份以下,則有容易維持由電漿處理所帶來的效果的傾向,且有可抑制黏著劑層與保護材的密接性下降的傾向。To maintain the effects of plasma treatment, it is effective to adjust the crosslinking agent content. The crosslinking agent content is preferably 5 parts by mass or greater, more preferably 7 parts by mass or greater, and even more preferably 10 parts by mass or greater, per 100 parts by mass of the base resin. A crosslinking agent content of 5 parts by mass or greater per 100 parts by mass of the base resin tends to suppress the effects of plasma treatment. The crosslinking agent content can be 30 parts by mass or less per 100 parts by mass of the base resin. If the crosslinking agent content is 30 parts by mass or less relative to 100 parts by mass of the base resin, the effects of the plasma treatment tend to be more easily maintained, and a decrease in the adhesion between the adhesive layer and the protective material tends to be suppressed.
黏著劑成分亦可含有其他成分。作為其他成分,例如可列舉:以促進基體樹脂與光聚合起始劑的交聯反應為目的而添加的胺、錫等觸媒;以適當地調整黏著特性為目的而添加的松香系、萜烯樹脂系等增黏劑(tackifier);各種界面活性劑等。Adhesives may also contain other ingredients. Examples of these include catalysts such as amines and tin, which are added to promote the crosslinking reaction between the base resin and the photopolymerization initiator; tackifiers such as rosin and terpene resins, which are added to appropriately adjust the adhesive properties; and various surfactants.
於一實施形態中,黏著劑層20可為包含如下黏著劑成分的層,所述黏著劑成分含有具有羥基的丙烯酸系樹脂及具有異氰酸酯基的交聯劑。In one embodiment, the adhesive layer 20 may be a layer comprising an adhesive component including an acrylic resin having a hydroxyl group and a crosslinking agent having an isocyanate group.
作為基體樹脂的具有羥基的丙烯酸系樹脂,可藉由使包含具有羥基的(甲基)丙烯酸酯的單體成分聚合而獲得。聚合方法可自各種自由基聚合等公知的聚合方法中適宜選擇,例如可為懸浮聚合法、溶液聚合法、塊狀聚合法等。The acrylic resin having a hydroxyl group as the base resin can be obtained by polymerizing a monomer component containing a (meth)acrylate having a hydroxyl group. The polymerization method can be appropriately selected from various known polymerization methods such as free radical polymerization, and examples thereof include suspension polymerization, solution polymerization, and bulk polymerization.
於所述聚合方法中使單體成分聚合的情況下,亦可視需要而使用聚合起始劑。作為此種聚合起始劑,例如可列舉:過氧化酮、過氧化縮酮、過氧化氫、二烷基過氧化物、二醯基過氧化物、過氧化碳酸酯、過氧化酯、2,2'-偶氮雙異丁腈、2,2'-偶氮雙(2,4-二甲基戊腈)、2,2'-偶氮雙(4-甲氧基-2'-二甲基戊腈)等。When polymerizing the monomer components in the polymerization method, a polymerization initiator may be used as needed. Examples of such polymerization initiators include ketone peroxides, peroxyketal, hydrogen peroxide, dialkyl peroxides, diacyl peroxides, peroxycarbonates, peroxyesters, 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).
具有黏著劑層20的黏著片前驅物100可使用公知的方法進行製造。黏著片前驅物100例如可藉由以下製造方法而獲得,所述製造方法包括:利用分散介質來稀釋黏著劑層用的材料,製備清漆的步驟;將所得的清漆塗敷於所述基材10上的步驟;以及自所塗敷的清漆中去除分散介質的步驟。The adhesive sheet precursor 100 having the adhesive layer 20 can be manufactured using known methods. For example, the adhesive sheet precursor 100 can be obtained by the following manufacturing method, which includes: preparing a varnish by diluting the adhesive layer material with a dispersion medium; applying the resulting varnish to the substrate 10; and removing the dispersion medium from the applied varnish.
黏著片前驅物100中的黏著劑層20的厚度可為0.1 μm~30 μm。若黏著劑層20的厚度為0.1 μm以上,則有可確保充分的黏著力的傾向。若黏著劑層20的厚度為30 μm以下,則有經濟上有利的傾向。The thickness of the adhesive layer 20 in the adhesive sheet precursor 100 can be 0.1 μm to 30 μm. A thickness of 0.1 μm or greater tends to ensure sufficient adhesion. A thickness of 30 μm or less tends to be economically advantageous.
黏著片前驅物100整體的厚度(基材10及黏著劑層20的合計厚度)可為5 μm~150 μm、50 μm~150 μm或100 μm~150 μm。The thickness of the adhesive sheet front drive 100 (the total thickness of the substrate 10 and the adhesive layer 20) can be 5 μm to 150 μm, 50 μm to 150 μm, or 100 μm to 150 μm.
黏著片前驅物100可於實施電漿處理之前,於黏著劑層20的與基材10相反一側的面上貼附有保護材。保護材可使用與後述的保護材30中所例示者相同的保護材。Before the plasma treatment, the adhesive sheet precursor 100 may have a protective material attached to the surface of the adhesive layer 20 opposite to the substrate 10. The protective material may be the same as that exemplified in the protective material 30 described below.
<電漿處理的實施步驟> 於本步驟中,對黏著片前驅物100中的黏著劑層20的與基材10相反一側的面實施電漿處理(圖1(b)的A)(參照圖1(b))。藉此,可製造具有已實施電漿處理A的黏著劑層(電漿處理後的黏著劑層20A)的黏著片110(參照圖1(c))。 <Plasma Treatment Step> In this step, a plasma treatment (A in Figure 1(b)) is performed on the surface of the adhesive layer 20 of the adhesive sheet precursor 100 opposite the substrate 10 (see Figure 1(b)). This produces an adhesive sheet 110 having an adhesive layer subjected to plasma treatment A (plasma-treated adhesive layer 20A) (see Figure 1(c)).
電漿為構成氣體的分子部分地或完全地電離,分成陽離子及電子而自由地運動的狀態。藉由使用電漿狀態的氣體來對黏著劑層的與基材相反一側的面進行處理,而於黏著劑層的表面進行化學反應,賦予含氧的親水性基,被處理面的接觸角降低,可提高潤濕性。利用該反應,能夠提高黏著片前驅物的黏著劑層20的黏著力。Plasma is a state in which the molecules that make up the gas are partially or completely ionized, separating into cations and electrons that move freely. By using plasma-state gas to treat the adhesive layer's surface opposite the substrate, a chemical reaction occurs on the adhesive layer's surface, imparting oxygen-containing hydrophilic groups. This reduces the contact angle of the treated surface and improves wettability. This reaction enhances the adhesion of the adhesive layer 20 to the adhesive sheet front drive.
電漿處理並無特別限制,就成本、處理能力、及減少損傷的觀點而言,可為使用大氣壓電漿的電漿處理。使用大氣壓電漿的電漿處理例如可使用超高密度大氣壓電漿單元(富士機械製造股份有限公司製造,商品名:FPB-20 型號II(TYPE II))來實施。The plasma treatment is not particularly limited. From the perspectives of cost, processing capacity, and damage reduction, atmospheric pressure plasma treatment is preferred. Plasma treatment using atmospheric pressure plasma can be performed using, for example, an ultra-high-density atmospheric pressure plasma unit (Fuji Kikai Co., Ltd., trade name: FPB-20 Type II).
關於電漿處理的處理溫度,就避免因電漿處理而對基材10及黏著劑層20造成損傷的觀點而言,較佳為以低於基材10的熔點或黏著劑層20的熔點中任一較低者的溫度來進行。電漿處理較佳為以在進行處理的時間內黏著片前驅物100(基材10及黏著劑層20)不產生褶皺、撓曲等的方式,即,黏著片不顯著地發生熱變形的方式,一邊調整處理溫度、處理速度等條件一邊進行。若產生褶皺、撓曲等,則有妨礙電漿處理時的裝置運轉之虞。電漿處理的溫度條件例如可為300℃以下、250℃以下、或200℃以下。To avoid damaging the substrate 10 and adhesive layer 20 during the plasma treatment, the plasma treatment temperature is preferably set below the lower of the melting points of the substrate 10 or the adhesive layer 20. Plasma treatment is preferably performed while adjusting the treatment temperature and speed to prevent wrinkles or warping of the adhesive sheet precursor 100 (substrate 10 and adhesive layer 20) during the treatment. In other words, the adhesive sheet does not significantly deform due to heat. Wrinkles or warping can interfere with the operation of the device during the plasma treatment. The temperature condition of the plasma treatment may be, for example, 300° C. or less, 250° C. or less, or 200° C. or less.
電漿處理可調整處理面積。因此,可對黏著片前驅物100中的黏著劑層20的與基材10相反一側的面的一部分或全部實施電漿處理。若對黏著劑層20的面的一部分實施電漿處理,則由於可調整被處理面的接觸角,而可於同一面,容易地分開形成接觸角低的部分(即,黏著劑層的黏著力高的部分)及接觸角高的部分(即,黏著劑層的黏著力低的部分)。Plasma treatment allows for adjustment of the treatment area. Therefore, plasma treatment can be performed on a portion or the entire surface of the adhesive layer 20 in the adhesive sheet precursor 100, which faces away from the substrate 10. Plasma treatment of a portion of the adhesive layer 20 allows for adjustment of the contact angle of the treated surface, making it easy to separate portions with a low contact angle (i.e., portions of the adhesive layer with high adhesion) from portions with a high contact angle (i.e., portions of the adhesive layer with low adhesion) on the same surface.
<保護材的配置步驟> 本步驟中,於已實施電漿處理的黏著劑層(電漿處理後的黏著劑層20A)的與基材10相反一側的面上貼附保護材30(參照圖1(d))。藉此,可獲得帶保護材的黏著片120。貼附保護材30的方法可使用公知的方法來進行貼附。 <Protective Material Application Step> In this step, a protective material 30 is attached to the surface of the plasma-treated adhesive layer (plasma-treated adhesive layer 20A) opposite the substrate 10 (see Figure 1(d)). This produces an adhesive sheet 120 with a protective material. The protective material 30 can be attached using known methods.
保護材30並無特別限制,可使用在黏著劑的領域中所使用的保護膜。作為保護膜,例如可列舉:聚對苯二甲酸乙二酯膜等聚酯系膜;聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚乙酸乙烯酯膜等聚烯烴系膜;聚氯乙烯膜、聚醯亞胺膜等塑膠膜等。另外,保護膜可使用紙、不織布、金屬箔等。保護材30的電漿處理後的黏著劑層20A側的面,亦可藉由矽酮系剝離劑、氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等脫模劑來進行處理。There are no particular limitations on the protective material 30, and protective films used in the adhesive field can be used. Examples of protective films include polyester films such as polyethylene terephthalate films; polyolefin films such as polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, and polyvinyl acetate films; and plastic films such as polyvinyl chloride films and polyimide films. Furthermore, protective films can be made of paper, nonwoven fabrics, or metal foil. The adhesive layer 20A side of the protective material 30, after plasma treatment, can also be treated with a release agent such as a silicone-based stripping agent, a fluorine-based stripping agent, or a long-chain alkyl acrylate-based stripping agent.
保護材30可為保護材30的貼附於電漿處理後的黏著劑層20A一側的面藉由電漿處理進行了處理者。藉由使用利用電漿處理進行了處理者作為保護材30,而有可長期維持電漿處理後的黏著劑層20A的潤濕性提高的狀態的傾向。The protective material 30 may be a material that has been treated by plasma treatment on the side of the protective material 30 that is attached to the plasma-treated adhesive layer 20A. Using a material that has been treated by plasma treatment as the protective material 30 tends to maintain the improved wettability of the plasma-treated adhesive layer 20A for a long period of time.
保護材30的厚度並無特別限制,可為5 μm~500 μm、10 μm~200 μm或15 μm~100 μm。The thickness of the protective material 30 is not particularly limited and may be 5 μm to 500 μm, 10 μm to 200 μm, or 15 μm to 100 μm.
[切晶-黏晶一體型帶的製造方法] 圖2(a)~圖2(c)是示意性地表示切晶-黏晶一體型帶的製造方法的一實施形態的剖面圖。本實施形態的切晶-黏晶一體型帶130的製造方法包括:對於藉由所述製造方法而獲得的黏著片110,於電漿處理後的黏著劑層20A的與基材10相反一側的面(已實施電漿處理的面)上形成接著劑層40的步驟(參照圖2(a)、圖2(b))。 [Method for Manufacturing a Die-Cut and Die-Bond Integrated Tape] Figures 2(a) to 2(c) are cross-sectional views schematically illustrating one embodiment of a method for manufacturing a die-cut and die-bond integrated tape. The method for manufacturing a die-cut and die-bond integrated tape 130 of this embodiment includes forming an adhesive layer 40 on the surface of the plasma-treated adhesive layer 20A opposite to the substrate 10 (the plasma-treated surface) of the adhesive sheet 110 obtained by the aforementioned manufacturing method (see Figures 2(a) and 2(b)).
接著劑層40是包含接著劑成分的層。作為構成接著劑層40的接著劑成分,例如可列舉:熱硬化性接著劑成分、光硬化性接著劑成分、熱塑性接著劑成分、氧反應性接著劑成分等。就接著性的觀點而言,接著劑層較佳為包含熱硬化性接著劑成分。Adhesive layer 40 is a layer containing an adhesive component. Examples of adhesive components constituting adhesive layer 40 include thermosetting adhesive components, light-curing adhesive components, thermoplastic adhesive components, and oxygen-reactive adhesive components. From the perspective of adhesion, the adhesive layer preferably contains a thermosetting adhesive component.
就接著性的觀點而言,熱硬化性接著劑成分較佳為包含環氧樹脂及可成為環氧樹脂的硬化劑的酚樹脂。From the perspective of adhesion, the thermosetting adhesive composition preferably includes an epoxy resin and a phenolic resin that can serve as a hardener for the epoxy resin.
環氧樹脂只要為分子內具有環氧基者,則可並無特別限制地使用。作為環氧樹脂,例如可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、含二環戊二烯骨架的環氧樹脂、二苯乙烯型環氧樹脂、含三嗪骨架的環氧樹脂、含茀骨架的環氧樹脂、三苯酚甲烷型環氧樹脂、聯苯型環氧樹脂、伸二甲苯基型環氧樹脂、聯苯芳烷基型環氧樹脂、萘型環氧樹脂、多官能酚類、蒽等多環芳香族類的二縮水甘油醚化合物等。該些可單獨使用一種或將兩種以上組合使用。以接著劑層總量為基準,環氧樹脂的含量可為2質量%~50質量%。Epoxy resins can be used without particular limitation as long as they have an epoxy group in the molecule. Examples of epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins, bisphenol F novolac type epoxy resins, epoxy resins containing dicyclopentadiene skeletons, Examples include styrene-based epoxy resins, triazine-based epoxy resins, fluorene-based epoxy resins, trisphenolmethane-based epoxy resins, biphenyl-based epoxy resins, xylylene-based epoxy resins, biphenylaralkyl-based epoxy resins, naphthalene-based epoxy resins, and diglycidyl ether compounds of polycyclic aromatic compounds such as polyfunctional phenols and anthracene. These can be used alone or in combination. The epoxy resin content can be 2% to 50% by mass based on the total weight of the adhesive layer.
酚樹脂只要為分子內具有酚性羥基者,則可並無特別限制地使用。作為酚樹脂,例如可列舉:苯酚、甲酚、間苯二酚、鄰苯二酚、雙酚A、雙酚F、苯基苯酚、胺基苯酚等酚類及/或α-萘酚、β-萘酚、二羥基萘等萘酚類與甲醛等具有醛基的化合物,於酸性觸媒下縮合或共縮合而獲得的酚醛清漆型酚樹脂;由烯丙基化雙酚A、烯丙基化雙酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等酚類及/或萘酚類與二甲氧基對二甲苯或雙(甲氧基甲基)聯苯所合成的苯酚芳烷基樹脂、萘酚芳烷基樹脂等。該些可單獨使用一種或將兩種以上組合使用。以接著劑層總量為基準,酚樹脂的含量可為2質量%~50質量%。Phenolic resins can be used without particular limitation as long as they have a phenolic hydroxyl group in the molecule. Examples of phenolic resins include novolac-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, o-catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde under an acidic catalyst; and phenol aralkyl resins and naphthol aralkyl resins synthesized from phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenol, and/or naphthols with dimethoxy-p-xylene or bis(methoxymethyl)biphenyl. These can be used alone or in combination. The content of the phenolic resin can be 2% to 50% by mass based on the total weight of the adhesive layer.
作為其他成分,接著劑層40亦可包含:三級胺、咪唑類、四級銨鹽類等硬化促進劑;氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧化矽、非晶質二氧化矽等無機填料等。以接著劑層總量為基準,其他成分的含量可為0質量%~20質量%。As other ingredients, the adhesive layer 40 may also include: curing accelerators such as tertiary amines, imidazoles, and quaternary ammonium salts; and inorganic fillers such as aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, and amorphous silica. The content of these other ingredients may be 0% to 20% by mass based on the total weight of the adhesive layer.
於黏著片110中,對黏著劑層20的與基材10相反一側的面的一部分或全部實施電漿處理。於對黏著劑層20的與基材10相反一側的面的一部分實施電漿處理的情況下,接著劑層40可以覆蓋黏著劑層20的已實施電漿處理的面的一部分或全部的方式形成,亦可以覆蓋黏著劑層20的未實施電漿處理的面的一部分或全部的方式形成。另外,接著劑層40亦可以覆蓋黏著劑層20的已實施電漿處理的面及黏著劑層20的未實施電漿處理的面兩方的面的一部分或全部的方式形成。於對黏著劑層20的全部實施電漿處理的情況下,接著劑層40可以覆蓋黏著劑層20的已實施電漿處理的面的一部分或全部的方式形成。In the adhesive sheet 110, a portion or all of the surface of the adhesive layer 20 opposite the substrate 10 is plasma-treated. When a portion of the surface of the adhesive layer 20 opposite the substrate 10 is plasma-treated, the adhesive layer 40 can be formed to cover a portion or all of the plasma-treated surface of the adhesive layer 20, or a portion or all of the non-plasma-treated surface of the adhesive layer 20. Alternatively, the adhesive layer 40 can be formed to cover a portion or all of both the plasma-treated surface and the non-plasma-treated surface of the adhesive layer 20. When the entire adhesive layer 20 is subjected to plasma treatment, the adhesive layer 40 may be formed so as to cover a portion or the entire surface of the adhesive layer 20 on which the plasma treatment has been performed.
作為於電漿處理後的黏著劑層20A的與基材10相反一側的面上形成接著劑層40的方法,例如可列舉:使用公知的方法,將接著劑成分成形為膜狀,將所得的膜狀接著劑貼合於電漿處理後的黏著劑層20A的與基材10相反一側的面的方法。如上所述,可獲得切晶-黏晶一體型帶130(參照圖2(b))。An example of a method for forming the adhesive layer 40 on the side of the plasma-treated adhesive layer 20A opposite to the substrate 10 is to form an adhesive component into a film using a known method and then adhere the resulting film-shaped adhesive to the side of the plasma-treated adhesive layer 20A opposite to the substrate 10. This produces a die-cut and die-bond integrated tape 130 (see FIG. 2( b )).
切晶-黏晶一體型帶130可於接著劑層40的與黏著劑層20A相反一側的面上具備保護材50。保護材50並無特別限制,可使用切晶-黏晶一體型帶中所使用的保護膜。作為保護膜,例如可列舉:聚對苯二甲酸乙二酯膜等聚酯系膜;聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚乙酸乙烯酯膜等聚烯烴系膜;聚氯乙烯膜、聚醯亞胺膜等塑膠膜等。如上所述,可獲得帶保護材的切晶-黏晶一體型帶140(參照圖2(c))。The die-cutting and die-bonding tape 130 can be provided with a protective material 50 on the surface of the adhesive layer 40 opposite the adhesive layer 20A. The protective material 50 is not particularly limited, and protective films used in die-cutting and die-bonding tapes can be used. Examples of protective films include polyester films such as polyethylene terephthalate films; polyolefin films such as polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, and polyvinyl acetate films; and plastic films such as polyvinyl chloride films and polyimide films. As described above, a die-cutting and die-bonding tape 140 with a protective material is obtained (see FIG. 2( c )).
[半導體裝置(半導體封裝體)的製造方法] 圖3(a)~圖3(f)是示意性表示半導體裝置的製造方法的一實施形態的剖面圖。本實施形態的半導體裝置的製造方法包括:將藉由所述製造方法而獲得的切晶-黏晶一體型帶130的接著劑層40貼附於半導體晶圓W的步驟(晶圓層壓步驟,參照圖3(a)、圖3(b));將半導體晶圓W、接著劑層40及已實施電漿處理的黏著劑層(電漿處理後的黏著劑層20A)單片化的步驟(切晶步驟,參照圖3(c));視需要對已實施電漿處理的黏著劑層(電漿處理後的黏著劑層20A)(經由基材10)照射紫外線的步驟(紫外線照射步驟,參照圖3(d));自已實施電漿處理的黏著劑層(黏著劑層20Aa)拾取附著有接著劑層40a的半導體元件Wa(帶接著劑層的半導體元件60)的步驟(拾取步驟,參照圖3(e));以及經由接著劑層40a,將帶接著劑層的半導體元件60接著於半導體元件搭載用支撐基板80的步驟(半導體元件接著步驟,參照圖3(f))。 [Method for Manufacturing a Semiconductor Device (Semiconductor Package)] Figures 3(a) to 3(f) are cross-sectional views schematically illustrating one embodiment of a method for manufacturing a semiconductor device. The manufacturing method of the semiconductor device of this embodiment includes: a step of attaching the adhesive layer 40 of the die-cut and die-bonded integrated tape 130 obtained by the above-mentioned manufacturing method to the semiconductor wafer W (wafer layer pressing step, see FIG3 (a), FIG3 (b)); a step of singulating the semiconductor wafer W, the adhesive layer 40 and the adhesive layer that has been subjected to plasma treatment (the adhesive layer 20A after plasma treatment) (die-cutting step, see FIG3 (c)); and optionally, performing a die-cutting on the adhesive layer that has been subjected to plasma treatment (the adhesive layer 20A after plasma treatment). A) irradiating ultraviolet rays (UV irradiation step, see FIG3(d)) through the substrate 10; picking up the semiconductor device Wa (semiconductor device 60 with a bonding agent layer) with the bonding agent layer 40a attached from the adhesive layer (adhesive layer 20Aa) subjected to plasma treatment (picking up step, see FIG3(e)); and bonding the semiconductor device 60 with the bonding agent layer to the semiconductor device supporting substrate 80 via the bonding agent layer 40a (semiconductor device bonding step, see FIG3(f)).
<晶圓層壓步驟> 首先,將切晶-黏晶一體型帶130配置於規定的裝置。繼而,於半導體晶圓W的主面Ws,經由接著劑層40而貼附切晶-黏晶一體型帶130(參照圖3(a)、圖3(b))。半導體晶圓W的電路面較佳為設置於與主面Ws為相反側的面。 <Wafer Lamination Step> First, the cut-and-bond integrated tape 130 is placed in a predetermined device. Next, the cut-and-bond integrated tape 130 is attached to the main surface Ws of the semiconductor wafer W via an adhesive layer 40 (see Figures 3(a) and 3(b)). The conductive surface of the semiconductor wafer W is preferably located on the side opposite the main surface Ws.
<切晶步驟> 其次,對半導體晶圓W、接著劑層40及電漿處理後的黏著劑層20A進行切晶(參照圖3(c))。此時,亦可將基材10的一部分切晶。如此,切晶-黏晶一體型帶130亦作為切晶片發揮功能。 <Dicing Step> Next, the semiconductor wafer W, the adhesive layer 40, and the plasma-treated adhesive layer 20A are sliced (see Figure 3(c)). At this point, a portion of the substrate 10 may also be sliced. In this way, the integrated dicing and bonding tape 130 also functions as a dicing wafer.
<紫外線照射步驟> 對於電漿處理後的黏著劑層20A,可視需要(經由基材10)照射紫外線(參照圖3(d))。於黏著劑成分中的基體樹脂為藉由紫外線而硬化者(紫外線硬化型基體樹脂)的情況下,該黏著劑層20A硬化,可降低黏著劑層20A與接著劑層40之間的接著力。於紫外線照射中,較佳為使用波長200 nm~400 nm的紫外線。紫外線照射條件較佳為將照度及照射量分別調整為30 mW/cm 2~240 mW/cm 2的範圍及200 mJ/cm 2~500 mJ/cm 2的範圍。 <UV Irradiation Step> The plasma-treated adhesive layer 20A may be irradiated with UV light (via the substrate 10) as needed (see Figure 3(d)). If the base resin in the adhesive composition is UV-curable (UV-curable base resin), the hardening of the adhesive layer 20A may reduce the bonding strength between the adhesive layer 20A and the adhesive layer 40. For UV irradiation, a wavelength of 200 nm to 400 nm is preferably used. The optimal UV irradiation conditions are to adjust the illumination and irradiation dose to the range of 30 mW/ cm2 to 240 mW/ cm2 and 200 mJ/ cm2 to 500 mJ/ cm2 , respectively.
<拾取步驟> 其次,藉由將基材10擴張而使經切晶的帶接著劑層的半導體元件60彼此分開,並且利用抽吸夾頭74抽吸自基材10側由頂針72頂起的帶接著層的半導體元件60,且自黏著劑層20Aa進行拾取(參照圖3(e))。於對黏著劑層20的與基材10相反一側的面的一部分實施電漿處理的情況下,黏著劑層20Aa的接著劑層40a側的面可為經實施電漿處理的面,亦可為未實施電漿處理的面,亦可為包括經實施電漿處理的面及未實施電漿處理的面兩方的面。再者,帶接著劑層的半導體元件60具有半導體元件Wa及接著劑層40a。半導體元件Wa為半導體晶圓W藉由切晶而分割出者,接著劑層40a為接著劑層40藉由切晶而分割出者。黏著劑層20Aa為電漿處理後的黏著劑層20A藉由切晶而分割出者。當拾取帶接著劑層的半導體元件60時,黏著劑層20Aa可殘留在基材10上。於拾取步驟中,未必需要將基材10擴張,但藉由將基材10擴張,可進一步提高拾取性。 <Pick-up Step> Next, the substrate 10 is expanded to separate the cut semiconductor devices 60 with adhesive layers. The semiconductor devices 60 with adhesive layers, lifted from the substrate 10 by the ejector pins 72, are then suctioned by the suction chuck 74 and picked up from the adhesive layer 20Aa (see Figure 3(e)). When plasma treatment is performed on a portion of the surface of the adhesive layer 20 opposite the substrate 10, the surface of the adhesive layer 20Aa on the adhesive layer 40a side may be the plasma-treated surface, the non-plasma-treated surface, or a combination of both the plasma-treated and non-plasma-treated surfaces. Furthermore, the semiconductor device 60 with an adhesive layer includes a semiconductor device Wa and an adhesive layer 40a. The semiconductor device Wa is obtained by dicing the semiconductor wafer W, and the adhesive layer 40a is obtained by dicing the adhesive layer 40. Adhesive layer 20Aa is formed by separating the plasma-treated adhesive layer 20A through wafer dicing. When picking up the semiconductor device 60 with the adhesive layer, adhesive layer 20Aa may remain on substrate 10. While expanding substrate 10 during the pickup step is not necessary, doing so can further improve pickup performance.
由頂針72產生的頂起量可適當設定。進而,就確保對極薄晶圓亦充分的拾取性的觀點而言,例如亦可進行兩段或三段的頂起。另外,亦可藉由使用抽吸夾頭74的方法以外的方法來拾取帶接著劑層的半導體元件60。The amount of lift generated by the ejector pins 72 can be appropriately set. Furthermore, to ensure sufficient pickup performance even for extremely thin wafers, a two-stage or three-stage lift can be used. Furthermore, the semiconductor device 60 with the adhesive layer can be picked up using methods other than the suction chuck 74.
<半導體元件接著步驟> 於拾取帶接著劑層的半導體元件60後,藉由熱壓接並經由接著劑層40a將帶接著劑層的半導體元件60接著於半導體元件搭載用支撐基板80(參照圖3(f))。半導體元件搭載用支撐基板80上可接著多個帶接著劑層的半導體元件60。 <Semiconductor Component Bonding Step> After picking up the semiconductor component 60 with the adhesive layer, it is bonded to the semiconductor component mounting support substrate 80 via the adhesive layer 40a by heat pressing (see Figure 3(f)). Multiple semiconductor components 60 with the adhesive layer can be bonded to the semiconductor component mounting support substrate 80.
本實施形態的半導體裝置的製造方法視需要可進而包括:藉由打線接合線70而將半導體元件Wa與半導體元件搭載用支撐基板80電性連接的步驟;以及於半導體元件搭載用支撐基板80的表面80a上,使用樹脂密封材92對半導體元件Wa進行樹脂密封的步驟。The manufacturing method of the semiconductor device of this embodiment may further include, as needed: a step of electrically connecting the semiconductor element Wa to the semiconductor element supporting substrate 80 by wire bonding wires 70; and a step of resin sealing the semiconductor element Wa on the surface 80a of the semiconductor element supporting substrate 80 using a resin sealing material 92.
圖4是示意性表示半導體裝置的一實施形態的剖面圖。圖4所示的半導體裝置200可藉由經過所述步驟而製造。半導體裝置200亦可於半導體元件搭載用支撐基板80的與表面80a相反一側的面形成有焊球94,用於與外部基板(母板(mother board))的電性連接。Figure 4 is a cross-sectional view schematically illustrating one embodiment of a semiconductor device. Semiconductor device 200 shown in Figure 4 can be manufactured through the aforementioned steps. Semiconductor device 200 may also have solder balls 94 formed on the surface of semiconductor element mounting support substrate 80 opposite to surface 80a for electrical connection to an external substrate (motherboard).
[黏著劑的處理方法] 一實施形態的黏著劑的處理方法包括:對黏著劑實施電漿處理的步驟。黏著劑可與所述黏著片的製造方法中所例示的黏著劑相同。電漿處理可與所述黏著片的製造方法中所例示的電漿處理相同。電漿處理可為使用大氣壓電漿的電漿處理。電漿處理的處理溫度可低於黏著劑的熔點。 [Adhesive Treatment Method] One embodiment of the adhesive treatment method includes the step of plasma treating the adhesive. The adhesive may be the same as the adhesive described above in the adhesive sheet manufacturing method. The plasma treatment may be the same as the plasma treatment described above in the adhesive sheet manufacturing method. The plasma treatment may be performed using atmospheric pressure plasma. The treatment temperature of the plasma treatment may be below the melting point of the adhesive.
[被黏著體的固定方法] 一實施形態的被黏著體的固定方法包括:經由藉由所述方法進行了處理的黏著劑,將第二被黏著體貼附於第一被黏著體的步驟。作為第一被黏著體及第二被黏著體,並無特別限制,可列舉金屬被黏著體(不鏽鋼(SUS)、鋁等)、非金屬被黏著體(聚碳酸酯、玻璃等)等。被黏著體的固定條件可根據黏著劑的種類、以及第一被黏著體及第二被黏著體的種類而適當設定。 [Adherend Securing Method] One embodiment of the adherend securing method includes attaching a second adherend to a first adherend via an adhesive treated by the method. The first and second adherends are not particularly limited, and examples thereof include metal adherends (such as stainless steel (SUS) and aluminum) and non-metallic adherends (such as polycarbonate and glass). The adherend securing conditions can be appropriately determined based on the type of adhesive and the types of the first and second adherends.
[被黏著體的剝離方法] 一實施形態的被黏著體的剝離方法包括:利用水來對藉由所述方法進行了固定的被黏著體的第一被黏著體與黏著劑的界面或第二被黏著體與黏著劑的界面的至少一者進行處理(與水接觸),將第一被黏著體及第二被黏著體剝離的步驟。相較於未實施電漿處理的黏著劑,已實施電漿處理的黏著劑的親水性基多,藉由利用水來進行處理(與水接觸),而有容易剝離的傾向。再者,當剝離第一被黏著體及第二被黏著體時,黏著劑可附著於第一被黏著體或第二被黏著體的任一者上,亦可自第一被黏著體及第二被黏著體脫離。 [實施例] [Adherend Removal Method] One embodiment of the adherend removal method includes treating (exposing to water) at least one of the interface between a first adherend and an adhesive or an interface between a second adherend and an adhesive, which adherends have been fixed by the method, with water to remove the first and second adherends. Plasma-treated adhesives have a higher hydrophilicity than untreated adhesives, and treatment with water (exposing to water) tends to facilitate removal. Furthermore, when peeling the first adherend and the second adherend, the adhesive can adhere to either the first adherend or the second adherend, and can also be detached from both the first adherend and the second adherend. [Example]
以下,基於實施例對本發明進行具體說明,但本發明並不限定於該些實施例。Hereinafter, the present invention will be described in detail based on embodiments, but the present invention is not limited to these embodiments.
(實施例1) [黏著片的製作] <黏著片前驅物的準備> 依據溶液聚合法,使作為單體的丙烯酸2-乙基己酯及甲基丙烯酸甲酯、以及作為含官能基的單體的丙烯酸羥基乙酯及丙烯酸聚合,藉此獲得具有羥基的丙烯酸系樹脂。具有羥基的丙烯酸系樹脂的重量平均分子量為40萬,玻璃轉移點為-38℃。 (Example 1) [Adhesive Sheet Preparation] <Preparation of Adhesive Sheet Precursor> 2-ethylhexyl acrylate and methyl methacrylate as monomers, and hydroxyethyl acrylate and acrylic acid as functional group-containing monomers, were polymerized by solution polymerization to obtain an acrylic resin having a hydroxyl group. The acrylic resin having a hydroxyl group had a weight-average molecular weight of 400,000 and a glass transition temperature of -38°C.
重量平均分子量是使用東曹(Tosoh)股份有限公司製造的SD-8022/DP-8020/RI-8020作為凝膠滲透層析(gel permeation chromatography,GPC)裝置,使用日立化成股份有限公司製造的凝膠組件(Gel pack)GL-A150-S/GL-A160-S作為管柱,以及使用四氫呋喃作為溶離液來測定聚苯乙烯換算的重量平均分子量(Mw)。The weight-average molecular weight (Mw) was determined using a Tosoh SD-8022/DP-8020/RI-8020 gel permeation chromatography (GPC) apparatus, a Hitachi Chemical Gel Pack GL-A150-S/GL-A160-S column, and tetrahydrofuran as the eluent.
玻璃轉移點是藉由以下的關係式(FOX式)而算出。 1/Tg=Σ(X i/Tg i) [所述式中,Tg表示共聚物的玻璃轉移點(K)。X i表示各單體的質量分率,X 1+X 2+…+X i+…+X n=1。Tg i表示各單體的均聚物的玻璃轉移點(K)] The glass transition point is calculated using the following relationship (FOX equation): 1/Tg = Σ( Xi / Tgi ) [In this equation, Tg represents the glass transition point (K) of the copolymer. Xi represents the mass fraction of each monomer, where X1 + X2 +…+ Xi +…+ Xn = 1. Tgi represents the glass transition point (K) of the homopolymer of each monomer.]
使用三合一馬達(three-one motor)及攪拌翼,相對於具有羥基的丙烯酸系樹脂100質量份而調配12質量份的多官能異氰酸酯交聯劑(三菱化學股份有限公司製造,商品名「麥太科(MITEC)NY730A-T」),並進行攪拌,藉此獲得黏著劑層形成用清漆。Using a three-in-one motor and a stirring blade, 12 parts by mass of a multifunctional isocyanate crosslinker (Mitsubishi Chemical Co., Ltd., trade name "MITEC NY730A-T") was mixed with 100 parts by mass of a hydroxyl-containing acrylic resin and stirred to obtain a varnish for forming an adhesive layer.
使用敷料器,將所得的黏著劑層形成用清漆,以黏著劑層的厚度成為10 μm的方式,一邊調整間隙一邊塗敷於基材膜A(厚度38 μm的聚對苯二甲酸乙二酯膜)上。於使所塗敷的黏著劑層形成用清漆於80℃下乾燥5分鐘後,將表面已實施電暈處理的基材膜B(厚度80 μm的聚烯烴系膜)層壓於黏著劑層上,並於室溫(25℃)下放置2週,充分地進行老化,藉此獲得具有基材膜A/黏著劑層/基材膜B的構成的黏著片前驅物。Using an applicator, the resulting adhesive layer-forming varnish was applied to Base Film A (38 μm thick polyethylene terephthalate film) while adjusting the gap to achieve a 10 μm thickness. After drying the applied adhesive layer varnish at 80°C for 5 minutes, Base Film B (80 μm thick polyolefin film) with a corona-treated surface was pressed onto the adhesive layer and allowed to stand at room temperature (25°C) for two weeks for sufficient aging. This yielded an adhesive sheet precursor having a structure of Base Film A/Adhesive Layer/Base Film B.
<電漿處理的實施> 剝去黏著片前驅物的基材膜A,使用超高密度大氣壓電漿單元(富士機械製造股份有限公司製造,商品名:FPB-20 TYPE II),對黏著片前驅物中的黏著劑層的與基材膜B相反一側的面實施電漿處理,製作黏著片。其後,於已實施電漿處理的黏著劑層的面上,配置保護材(聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)膜),獲得實施例1的帶保護材的黏著片。 <Plasma Treatment> The base film A of the adhesive sheet precursor was removed, and the adhesive layer of the adhesive sheet precursor, on the side opposite to the base film B, was plasma treated using an ultra-high-density atmospheric pressure plasma unit (Fuji Machinery Co., Ltd., trade name: FPB-20 TYPE II) to produce an adhesive sheet. A protective material (polyethylene terephthalate (PET) film) was then placed on the plasma-treated surface of the adhesive layer, yielding the protective material-attached adhesive sheet of Example 1.
(電漿處理的條件) 加熱器的使用:不使用 照射速度:500 mm/秒 照射距離:5 mm 狹縫噴嘴:20 mm寬 使用氣體:氮氣及空氣 氣體流量:氮氣60 L/分鐘、空氣21 L/分鐘 重覆數:1次(照射方法:20 mm寬×8線) 樣品尺寸:150 mm×150 mm 再者,調整照射距離、照射速度、加熱器設定等,且以處理溫度為100℃以下的方式進行設定,以使在進行處理的時間內黏著片前驅物100(基材10及黏著劑層20)不產生褶皺、撓曲等。 (Plasma Treatment Conditions) Heater Used: Not Used Irradiation Speed: 500 mm/s Irradiation Distance: 5 mm Slit Nozzle: 20 mm Width Gases Used: Nitrogen and Air Gas Flow Rate: Nitrogen 60 L/min, Air 21 L/min Number of Repeats: 1 (Irradiation Pattern: 20 mm Width × 8 Lines) Sample Size: 150 mm × 150 mm In addition, adjust the irradiation distance, irradiation speed, and heater settings, and set the treatment temperature to 100°C or below, so that the adhesive sheet substrate 100 (substrate 10 and adhesive layer 20) does not wrinkle or warp during the treatment.
(實施例2) 對保護材的黏著劑層側的面,實施與對黏著劑層所實施的電漿處理相同的電漿處理(重覆數:1次),除此以外,以與實施例1相同的方式進行,獲得實施例2的帶保護材的黏著片。 (Example 2) Example 2 produced an adhesive sheet with a protective material in the same manner as in Example 1, except that the adhesive layer side of the protective material was subjected to the same plasma treatment as that applied to the adhesive layer (number of repetitions: 1).
(實施例3) 將保護材的電漿處理的重覆數自1次變更為4次,除此以外,以與實施例2相同的方式進行,獲得實施例3的帶保護材的黏著片。 (Example 3) Example 3 produced an adhesive sheet with a protective material in the same manner as Example 2, except that the number of repetitions of the plasma treatment of the protective material was changed from 1 to 4.
(實施例4) 將黏著劑層的電漿處理的重覆數自1次變更為4次,除此以外,以與實施例1相同的方式進行,獲得實施例2的帶保護材的黏著片。 (Example 4) Example 4 was performed in the same manner as Example 1, except that the number of repetitions of the plasma treatment of the adhesive layer was changed from 1 to 4. The adhesive sheet with protective material of Example 2 was obtained.
(實施例5) 對保護材的黏著劑層側的面,實施與對黏著劑層所實施的電漿處理相同的電漿處理(重覆數:1次),除此以外,以與實施例4相同的方式進行,獲得實施例5的帶保護材的黏著片。 (Example 5) Example 5 produced an adhesive sheet with a protective material in the same manner as in Example 4, except that the surface of the protective material facing the adhesive layer was subjected to the same plasma treatment as that applied to the adhesive layer (number of repetitions: 1).
(實施例6) 將保護材的電漿處理的重覆數自1次變更為4次,除此以外,以與實施例5相同的方式進行,獲得實施例6的帶保護材的黏著片。 (Example 6) Example 6 was performed in the same manner as Example 5, except that the number of repetitions of the plasma treatment of the protective material was changed from 1 to 4. A protective material-attached adhesive sheet of Example 6 was obtained.
(比較例1) 未對黏著劑層實施電漿處理,除此以外,以與實施例1相同的方式進行,獲得比較例1的帶保護材的黏著片。 (Comparative Example 1) Except for not performing plasma treatment on the adhesive layer, the same procedures as in Example 1 were followed to obtain an adhesive sheet with a protective material according to Comparative Example 1.
[評價] <水對黏著劑層的已實施電漿處理的面的接觸角的測定> 對於實施例1~實施例6及比較例1的帶保護材的黏著片,測定水對已實施電漿處理的面的接觸角。測定中,使用接觸角計(協和界面化學股份有限公司製造,商品名:卓普馬斯特(Drop Master)300)。藉由以下方式進行測定:將帶保護材的黏著片的保護材剝離,於黏著劑層的已實施電漿處理的面滴加水作為探針液體。測定條件是將溫度設為23℃~28℃,將探針液體的液滴量設為1.5 μL,將測定時機設為探針的液滴下後5秒。將測定的試行數設為10次,求出所得的數值的中位數作為接觸角θ。將結果示於表1中。 [Evaluation] <Measurement of the contact angle of water on the plasma-treated surface of the adhesive layer> The contact angle of water on the plasma-treated surface of the adhesive sheets with protective material used in Examples 1 to 6 and Comparative Example 1 was measured. A contact angle meter (Drop Master 300, manufactured by Kyowa Interface Chemicals Co., Ltd.) was used for the measurement. The protective material of the adhesive sheet with protective material was removed, and water was dripped onto the plasma-treated surface of the adhesive layer as a probe liquid. The measurement conditions were a temperature of 23°C to 28°C, a probe liquid drop volume of 1.5 μL, and a measurement time of 5 seconds after the probe liquid was dropped. The number of measurement trials was set to 10, and the median of the obtained values was calculated as the contact angle θ. The results are shown in Table 1.
[表1]
<黏著劑層對SUS基板的剝離強度的測定> 將實施例1、實施例2及比較例1的帶保護材的黏著片切成寬度10 mm、長度70 mm以上,且將保護材自帶保護材的黏著片剝離後貼附於SUS板(SUS430BA),將其作為初期的測定樣品。貼附於SUS板時,利用3 kg的錘輥在樣品上往返3次。將剝離引導帶(王子塔克(OJITAC)公司製造,EC帶)切成寬度10 mm,於樣品的前端黏貼10 mm左右,固定於荷重元(load cell)的前端。以剝離的進展與帶寬度平行的方式對荷重元的位置進行微調。另外,將初期的測定樣品冷藏(5℃)保管3個月,將其作為經過3個月的測定樣品。對於該些測定樣品,以剝離角度30度、剝離速度50 mm/分鐘進行SUS基板與黏著劑層的剝離,求出剝離強度。另外,SUS基板是在使用前利用丙酮清洗後使用。將結果示於表2中。另外,表2中的數值是將比較例1的剝離強度的數值作為基準的相對值。 <Measurement of the Peel Strength of the Adhesive Layer from the SUS Substrate> The adhesive sheets with protective material used in Examples 1, 2, and Comparative Example 1 were cut into pieces with a width of 10 mm and a length of at least 70 mm. The protective material was peeled off the adhesive sheets and attached to a SUS plate (SUS430BA) to serve as initial measurement samples. While attached to the SUS plate, a 3 kg hammer roller was moved back and forth three times over the sample. A peeling guide tape (EC tape, manufactured by Ojitac) was cut into a width of 10 mm and attached approximately 10 mm from the tip of the sample. The tape was then fixed to the tip of a load cell. The load cell position was finely adjusted so that the progress of the peeling was parallel to the tape width. Initial test samples were stored refrigerated (5°C) for three months, creating three-month test samples. For these test samples, the SUS substrate and adhesive layer were peeled at a peeling angle of 30 degrees and a peeling speed of 50 mm/min to determine the peel strength. The SUS substrates were cleaned with acetone before use. The results are shown in Table 2. The values in Table 2 are relative to the peel strength values of Comparative Example 1.
[表2]
可推測,於使用例如以其他丙烯酸系樹脂、合成橡膠、天然橡膠、聚醯亞胺樹脂等為基體樹脂者來代替實施例1~實施例6的帶保護材的黏著片中的黏著劑層的情況下,亦可獲得同樣的效果。It can be inferred that the same effect can be obtained when using other acrylic resins, synthetic rubbers, natural rubbers, polyimide resins, etc. as base resins instead of the adhesive layer in the adhesive sheets with protective materials of Examples 1 to 6.
與比較例1的帶保護材的黏著片相比,實施例1~實施例6的帶保護材的黏著片中,黏著劑層的已實施電漿處理的面的接觸角降低,黏著劑層的潤濕性提高。另外,與比較例1的帶保護材的黏著片相比,實施例1、實施例2的帶保護材的黏著片的剝離強度提高,黏著力提高。另外,由實施例1與實施例2的對比而判明,藉由亦對保護材實施電漿處理,可長期維持實施了電漿處理的效果。由該些結果可確認到,本發明的製造方法能夠製造黏著力優異的黏著片。Compared to the protective adhesive sheet of Comparative Example 1, the contact angle of the plasma-treated surface of the adhesive layer in Examples 1 through 6 was reduced, improving the wettability of the adhesive layer. Furthermore, compared to the protective adhesive sheet of Comparative Example 1, the protective adhesive sheets of Examples 1 and 2 exhibited improved peel strength and adhesion. Furthermore, a comparison between Examples 1 and 2 demonstrates that plasma treatment of the protective material maintains the effects of the plasma treatment over a long period of time. These results confirm that the manufacturing method of the present invention is capable of producing adhesive sheets with excellent adhesion.
10:基材 20、20Aa:黏著劑層 20A:電漿處理後的黏著劑層 30、50:保護材 40、40a:接著劑層 60:帶接著劑層的半導體元件 70:打線接合線 72:頂針 74:抽吸夾頭 80:半導體元件搭載用支撐基板 80a:表面 92:樹脂密封材 94:焊球 100:黏著片前驅物 110:黏著片 120:帶保護材的黏著片 130:切晶-黏晶一體型帶 140:帶保護材的切晶-黏晶一體型帶 200:半導體裝置 A:電漿處理 W:半導體晶圓 Wa:半導體元件 Ws:主面 10: Substrate 20, 20Aa: Adhesive layer 20A: Adhesive layer after plasma treatment 30, 50: Protective material 40, 40a: Adhesive layer 60: Semiconductor component with adhesive layer 70: Wire bonding wire 72: Ejector pin 74: Suction chuck 80: Support substrate for semiconductor component mounting 80a: Surface 92: Resin sealant 94: Solder balls 100: Adhesive sheet front driver 110: Adhesive sheet 120: Adhesive sheet with protective material 130: Die-bond integrated tape 140: Die-bond integrated tape with protective material 200: Semiconductor device A: Plasma treatment W: Semiconductor wafer Wa: Semiconductor element Ws: Main surface
圖1(a)~圖1(d)是示意性表示黏著片的製造方法的一實施形態的剖面圖。圖1(a)、圖1(b)、圖1(c)及圖1(d)是示意性表示各步驟的剖面圖。 圖2(a)~圖2(c)是示意性地表示切晶-黏晶一體型帶的製造方法的一實施形態的剖面圖。圖2(a)、圖2(b)及圖2(c)是示意性表示各步驟的剖面圖。 圖3(a)~圖3(f)是示意性表示半導體裝置的製造方法的一實施形態的剖面圖。圖3(a)、圖3(b)、圖3(c)、圖3(d)、圖3(e)及圖3(f)是示意性表示各步驟的剖面圖。 圖4是示意性表示半導體裝置的一實施形態的剖面圖。 Figures 1(a) to 1(d) are cross-sectional views schematically illustrating an embodiment of a method for manufacturing an adhesive sheet. Figures 1(a), 1(b), 1(c), and 1(d) are cross-sectional views schematically illustrating each step. Figures 2(a) to 2(c) are cross-sectional views schematically illustrating an embodiment of a method for manufacturing a die-cut and die-bonded integrated tape. Figures 2(a), 2(b), and 2(c) are cross-sectional views schematically illustrating each step. Figures 3(a) to 3(f) are cross-sectional views schematically illustrating an embodiment of a method for manufacturing a semiconductor device. Figures 3(a), 3(b), 3(c), 3(d), 3(e), and 3(f) are cross-sectional views schematically illustrating each step. FIG4 is a cross-sectional view schematically showing one embodiment of a semiconductor device.
10:基材 10: Base material
20:黏著劑層 20: Adhesive layer
20A:電漿處理後的黏著劑層 20A: Adhesive layer after plasma treatment
30:保護材 30:Protective material
100:黏著片前驅物 100: Adhesive film front drive
110:黏著片 110: Adhesive sheet
120:帶保護材的黏著片 120: Adhesive sheet with protective material
A:電漿處理 A: Plasma treatment
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| JP7675533B2 (en) * | 2021-03-02 | 2025-05-13 | リンテック株式会社 | Workpiece processing sheet |
| JP2025146453A (en) * | 2024-03-22 | 2025-10-03 | 株式会社レゾナック | Semiconductor device manufacturing method and fillet formation suppression method |
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- 2019-06-06 CN CN202310234425.8A patent/CN116218389B/en active Active
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- 2019-06-06 TW TW112130989A patent/TWI900880B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202000827A (en) | 2020-01-01 |
| CN112272691A (en) | 2021-01-26 |
| CN116218389A (en) | 2023-06-06 |
| KR102602484B1 (en) | 2023-11-16 |
| JP7283472B2 (en) | 2023-05-30 |
| JPWO2019235562A1 (en) | 2021-06-24 |
| SG11202011944WA (en) | 2021-01-28 |
| CN112272691B (en) | 2023-03-28 |
| TW202405118A (en) | 2024-02-01 |
| TWI815903B (en) | 2023-09-21 |
| KR20210020042A (en) | 2021-02-23 |
| WO2019235562A1 (en) | 2019-12-12 |
| CN116218389B (en) | 2025-12-12 |
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