TWI886791B - Plasma equipment for semiconductor and negative pressure exhaust device thereof - Google Patents

Abstract

The present invention relates to a plasma equipment for semiconductor and negative pressure exhaust device thereof. The negative pressure exhaust device joints an exhaust gas outlet of a plasma reaction chamber of the plasma equipment and has a tee pipe, an air pump and a plasma generator. The plasma generator joints between one opening of a main tube of the tee pipe and the exhaust gas outlet. The air pump joints another opening of the main tube of the tee pipe. When the air extraction pump is started, the plasma reaction chamber is evacuated and a negative pressure air flow is generated. The negative pressure airflow passes through a plasma chamber of the plasma generator, and then the negative pressure airflow brings the plasma generated by the plasma chamber to the main tube of the tee pipe to clean an inner wall of the main tube. Therefore, a frequency of manual cleaning or maintenance of the tee pipe.

Description

Semiconductor plasma equipment and negative pressure exhaust device thereof

The present invention relates to a negative pressure exhaust device for semiconductor plasma equipment, and in particular to a negative pressure exhaust device with plasma cleaning function.

In the semiconductor manufacturing process, plasma technology is used to implement different semiconductor manufacturing process steps, such as: sputtering (Sputtering), plasma chemical vapor deposition (PECVD) in the thin film deposition process step; dry etching (Dry etching) in the etching process step; and in implantation technology, the ion source (ion Source) of the ion implanter and plasma immersion ion implantation (plasma immersion ion implantation), etc.

Please refer to FIG. 4 , a plasma-assisted chemical vapor deposition (PECVD) device includes a plasma reaction chamber 50, a vacuum exhaust device 60 and a remote plasma source device 64; wherein the vacuum exhaust device 60 is disposed on the bottom surface 52 of the plasma reaction chamber 50 and is responsible for evacuating the plasma reaction chamber 50 before the deposition process, and the remote plasma source device 64 is disposed on the top surface 51 of the plasma reaction chamber 50.

The vacuum exhaust device 60 includes an exhaust pipe 61 and two exhaust pumps 62 and 63. One exhaust pump 62 is responsible for exhausting the plasma reaction chamber 50 to a vacuum state through the exhaust pipe 61, and then activating the other exhaust pump 63 to exhaust gas to maintain the high vacuum state of the plasma reaction chamber 50. Therefore, the gas extracted from the plasma reaction chamber 50 is exhausted to the outside through the exhaust pipe 61. When the plasma reaction chamber 50 is in a vacuum state, the deposition process is carried out. After the deposition process is completed, the two exhaust pumps 62 and 63 are still kept activated, and the remote plasma source device 64 is activated to generate cleaning plasma in the plasma reaction chamber 50 to clean the deposited particles attached to the inner wall surface due to the deposition process. At this time, the cleaned particles in the plasma reaction chamber 50 are continuously discharged to the outside through the exhaust pipe 61.

As can be seen from the above description, during the deposition process, since the vacuum pump of the vacuum exhaust device is continuously activated, the particles generated by the deposition process not only adhere to the inner wall surface of the plasma reaction chamber, but also are discharged into the exhaust pipe, and are attached to the pipe wall of the exhaust pipe, and even to the exhaust pump; therefore, currently the personnel in the semiconductor factory need to manually stop the machine for cleaning and maintenance after a period of time, that is, the exhaust pipe needs to be disassembled for cleaning and then reinstalled to ensure the vacuum pumping capacity of the exhaust pipe to stabilize the deposition quality of the plasma reaction chamber.

However, shutting down the PACVD equipment to clean the exhaust pipes will cause huge losses. Manual cleaning of the exhaust pipes is complicated and generates additional industrial waste liquid. It also causes uncontrollable particle dusting, especially for advanced process (below 10nm) semiconductor equipment. Therefore, it is necessary to further seek more effective technology for cleaning the exhaust pipes of the above-mentioned semiconductor plasma equipment.

In view of the above-mentioned problems of the difficult cleaning of the exhaust pipe of the semiconductor plasma equipment and the generation of dust particles, the main purpose of the present invention is to provide a semiconductor plasma equipment and a negative pressure exhaust device thereof, which can eliminate the need for manual cleaning and maintenance operations.

The main technical means used to achieve the above purpose is to make the semiconductor plasma equipment include: a plasma reaction chamber, which is respectively provided with a plasma inlet, a first exhaust gas outlet and a second exhaust gas outlet; a first plasma generator, which is provided at the plasma inlet of the plasma reaction chamber to provide a sufficient amount of plasma for cleaning the plasma reaction chamber; and a negative pressure exhaust device, which is provided The first exhaust gas outlet and the second exhaust gas outlet of the plasma reaction chamber include: a three-way pipe including a main pipe and a side pipe connected to each other, the main pipe has a first pipe opening and a second pipe opening, and the side pipe includes a third pipe opening; a first exhaust pump is connected to the second pipe opening of the main pipe of the three-way pipe to extract the air in the plasma reaction chamber and generate a negative pressure. The gas flows through the main pipe of the three-way pipe, so that the plasma reaction chamber is in a negative pressure state; a second exhaust pump is connected to the second exhaust gas outlet of the plasma reaction chamber and the third pipe port of the side pipe of the three-way pipe to extract the air in the plasma reaction chamber so that the plasma reaction chamber is maintained in a negative pressure state; and a second plasma generator has a plasma chamber, and the plasma chamber has There is a first opening and a second opening; wherein the first opening is connected to the first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure airflow passes through the plasma chamber and enters the main pipe of the three-way pipe, and the second plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure airflow exists.

From the above description, it can be seen that the semiconductor plasma equipment of the present invention is mainly equipped with two plasma generators to respectively provide sufficient cleaning plasma to the plasma reaction chamber and the main pipe of the three-way pipe to clean the inner wall surface; wherein the second plasma generator is arranged at the first pipe opening of the main pipe of the three-way pipe, and when the first exhaust pump exhausts the plasma reaction chamber, the negative pressure gas flow will pass through the plasma. The negative pressure airflow passes through the plasma chamber, and the particles therein are eliminated by the plasma, and the plasma is carried to the main pipe of the three-way pipe, so that the inner wall surface of the main pipe is cleaned more efficiently, and the inner wall of the main pipe is continuously maintained free of particle deposition, so as to effectively reduce the frequency of manual cleaning or replacement of the three-way pipe, which is particularly suitable for semiconductor plasma equipment with advanced processes (below 10nm) that are susceptible to particle dusting.

The main technical means used to achieve the above-mentioned purpose is to make the negative pressure exhaust device of the semiconductor plasma equipment include: a three-way pipe, which includes a main pipe and a side pipe connected to each other, the main pipe has a first pipe opening and a second pipe opening, and the side pipe includes a third pipe opening; a first exhaust pump is connected to the second pipe opening of the main pipe of the three-way pipe, and generates a negative pressure air flow through the main pipe of the three-way pipe; a second exhaust pump is connected to a second exhaust gas outlet of a plasma reaction chamber, and connected to the third exhaust gas outlet of the plasma reaction chamber. The third pipe opening of the side pipe of the three-way pipe is connected; and a second plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is for connecting to a first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure air flows through the plasma chamber and then enters the main pipe of the three-way pipe, and the plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure air flows.

As can be seen from the above description, the negative pressure exhaust device of the semiconductor plasma equipment of the present invention is used to connect with the first and second exhaust gas exhaust ports of the plasma reaction chamber, and mainly the plasma generator is arranged at the first pipe opening of the main pipe of the three-way pipe; in this way, the negative pressure airflow generated by the exhaust of the plasma reaction chamber will first pass through the plasma chamber of the plasma generator, and then pass through the plasma chamber of the plasma generator. When the negative pressure airflow passes through the plasma chamber, the particles in it will be eliminated, and the plasma will be brought to the main pipe of the three-way pipe, thereby cleaning the inner wall of the main pipe and continuously maintaining the inner wall of the main pipe free of particle deposition, so as to effectively reduce the frequency of manual cleaning or replacement of the three-way pipe, which is particularly suitable for semiconductor plasma equipment with advanced processes (below 10nm) that are susceptible to particle dusting.

10: Plasma reaction chamber

100: Top

101: Bottom

11: Plasma inlet

12: First exhaust gas outlet

13: Second exhaust gas outlet

20: First plasma generator

21: Plasma chamber

22: Matching circuit

23: Power supply

30: Negative pressure exhaust device

31: Tee pipe

32: Supervisor

321: First pipe opening

322: Second pipe opening

33: Lateral tube

331: The third pipe opening

34: First air pump

35: Second vacuum pump

351: Fourth air valve

36: First air valve

37: Second air valve

38: Third air valve

39: Control unit

40: Second plasma generator

41: Plasma chamber

411: First opening

412: Second opening

42: Shell

43: First flange joint

44: Second flange joint

45: Gas channel

46: Third flange joint

461: Fifth air valve

462:External gas pipe

47: Coil

48: Matching circuit

49: Power supply

50: Plasma reaction chamber

51: Top

52: Bottom

60: Vacuum exhaust device

61: Exhaust pipeline

62: Vacuum pump

63: Vacuum pump

64: Remote plasma source device

Figure 1: A cross-sectional schematic diagram of the first embodiment of the semiconductor plasma equipment of the present invention.

Figure 2: A three-dimensional external view of the second plasma generator of the present invention connected to a three-way pipe.

Figure 3: A cross-sectional schematic diagram of the second embodiment of the semiconductor plasma equipment of the present invention.

Figure 4: A schematic cross-sectional view of an existing plasma-assisted chemical vapor deposition device.

The present invention proposes a semiconductor plasma device with a negative pressure exhaust device. The technical content is described in detail below with multiple embodiments and drawings.

First, please refer to FIG. 1 , which is a first embodiment of the semiconductor plasma equipment of the present invention, which includes a plasma reaction chamber 10, a first plasma generator 20 and a negative pressure exhaust device 30.

The plasma reaction chamber 10 is used for placing semiconductor wafers therein to perform semiconductor processes, such as a plasma-assisted chemical vapor deposition chamber, but not limited thereto. The plasma reaction chamber 10 includes a top surface 100, a bottom surface 101, a first exhaust gas outlet 12, and a second exhaust gas outlet 13; in this embodiment, the plasma inlet 11 is located on the top surface 100 of the plasma reaction chamber 10, and the first and second exhaust gas outlets 12 and 13 are located on the bottom surface 101 of the plasma reaction chamber 10.

The first plasma generator 20 is disposed at the plasma inlet 11 of the top surface 100 of the plasma reaction chamber 10, and comprises a plasma generating chamber 21, a matching circuit 22 (or coil) and a power supply device 23. The first plasma generator 20 is used to generate a cleaning plasma for the plasma reaction chamber 10; wherein the first plasma generator 20 uses an external gas for plasma ignition, and the external gas can be CF4 or NF3.

The negative pressure exhaust device 30 is disposed at the first exhaust gas outlet 12 and the second exhaust gas outlet 13 of the plasma reaction chamber 10, and includes a three-way pipe 31, a first exhaust pump 34, a second exhaust pump 35 and a second plasma generator 40. The three-way pipe 31 includes a main pipe 32 and a side pipe 33 that are interconnected. The main pipe 32 has a first pipe opening 321 and a second pipe opening 322. The side pipe 33 includes a third pipe opening 331. The first exhaust pump 34 is connected to the second pipe port 322 of the main pipe 32 of the three-way pipe 31, extracts the air in the plasma reaction chamber 10, and generates a negative pressure airflow F through the main pipe 32 of the three-way pipe 31, so that the plasma reaction chamber 10 is in a negative pressure state, so the negative pressure airflow F can include the remaining part of the external gas used by the first plasma generator 20 after the plasma is ignited. The second exhaust pump 35 is connected to the second exhaust gas outlet 13 of the plasma reaction chamber 10 and the third pipe port 331 of the side pipe 33 of the three-way pipe 31, extracts the air in the plasma reaction chamber 10, so that the plasma reaction chamber 10 is maintained in a negative pressure state. In this embodiment, the second vacuum pump 35 is a turbomolecular pump and has a fourth gas valve 351. The second vacuum pump 35 is connected to the second exhaust gas outlet 13 of the plasma reaction chamber 10 through the fourth gas valve 351.

The second plasma generator 40 of the negative pressure exhaust device 30 has a plasma chamber 41. The plasma chamber 41 is connected to a power supply device 49 through a matching circuit 48 to generate a sufficient amount of cleaning plasma. The plasma chamber 41 has a first opening 411 and a second opening 412. Please refer to FIG. 2 , a first flange joint 43 is provided on a housing 42 of the second plasma generator 40 to communicate with the first opening 411 for connection to the first exhaust gas outlet 12 of the plasma reaction chamber 10, so that the first opening 411 is connected with the first exhaust gas outlet 12; and a second flange joint 44 is provided on the housing 42 to communicate with the second opening 412 and to connect to the first pipe opening 321 of the main pipe 32 of the three-way pipe 31, so that the second opening 412 can be connected with the first pipe opening 321. In addition, a gas channel 45 connected to the plasma chamber 41 is added to the shell 42, and the shell 42 can be further provided with a third flange joint 46, which is connected to the gas channel 45 and is provided for connecting an external gas tube 462 to allow the external gas to enter the plasma chamber 41. The external gas can be CF4 or NF3. In another embodiment, since the second plasma generator 40 only needs to generate enough cleaning plasma for the main pipe 32 of the three-way pipe 31, the gas for ionization can be ignited by using the remaining external gas in the negative pressure air flow, that is, the gas that is input into the first plasma generator 20 during the vacuum period but not ionized enters the second plasma generator 40 along with the negative pressure air flow F, and the power of the second plasma generator 40 is less than that of the first plasma generator 20, which can be between 100W and 300W, and the frequency is between 4MHz and 13MHz, and the cleaning efficiency is 150-280Å/min. In one embodiment, the second plasma generator 40 may be an inductively coupled plasma generator, whose ignition coil 47 is connected to the power supply device 49 through the matching circuit 48 or coil.

The first pump 34 is first activated to pump the plasma reaction chamber 10 to a negative pressure until it reaches a vacuum state (about several hundred mTorr level), and then the second pump 35 is simultaneously activated to perform negative pressure pumping to maintain a high vacuum state of the plasma reaction chamber 10 so that the plasma reaction chamber 10 can perform semiconductor processes. When the semiconductor process is finished, the first plasma generator 20 and the second plasma generator 40 are started. The first plasma generator 20 sends the generated cleaning plasma into the plasma inlet 11 of the top surface 100 of the plasma reaction chamber 10 to clean the inner wall surface of the plasma reaction chamber 10 due to the particles generated during the semiconductor process. The cleaned waste gas is subjected to the negative pressure air flow generated by the air extraction of the first exhaust pump 34 and is discharged to the outside through the second plasma generator 40, the main pipe 32 of the three-way pipe 31 and the first exhaust pump 34. At this time, since the second plasma generator 40 is also activated and located between the plasma reaction chamber 10 and the tee pipe 31, the cleaning plasma generated by it will be sent into the main pipe 32 of the tee pipe 31 along with the negative pressure air flow to more efficiently clean the main pipe 32 of the tee pipe 31; thus, during the cleaning of the plasma reaction chamber 10, the main pipe 32 of the tee pipe 31 can be cleaned at the same time.

In addition, the semiconductor plasma equipment of the present invention may further include a first gas valve 36, a second gas valve 37, a third gas valve 38 and a control unit 39. The first gas valve 36 is disposed in the main pipe 32 of the three-way pipe 31; the second gas valve 37 is disposed in the side pipe 33 of the three-way pipe 31; the third gas valve 38 is disposed between the first exhaust gas outlet 12 and the first opening 411 of the second plasma generator 40. As for the control unit 39, it is electrically connected to the first and second plasma generators 20, 40, the first to third gas valves 36, 37, 38 and the fourth gas valve 351 of the second exhaust pump 35, and has a built-in process program and a cleaning program.

The above-mentioned manufacturing process is that the control unit 39 starts the first exhaust pump 34 and opens the first and third gas valves 36 and 38, so that the first exhaust pump 34 exhausts the plasma reaction chamber 10 through the main pipe 32 of the three-way pipe 31. When the negative pressure state of the plasma reaction chamber 10 reaches the vacuum level (about several hundred mTorr level), the first gas valve 36 and the first exhaust pump 34 are maintained open, the third gas valve 38 is closed, the second gas valve 37 and the fourth gas valve 351 are opened, and the second exhaust pump 35 is started to maintain the vacuum state in the plasma reaction chamber 10 to carry out the semiconductor manufacturing process.

The above cleaning procedure is executed after the semiconductor process in the process sequence is completed. The control unit 39 maintains the first gas valve 36 and the first vacuum pump 34 open, closes the fourth gas valve 351 of the second vacuum pump 35 and the second gas valve 37, opens the third gas valve 38, and starts the first and second plasma generators 20 and 40; wherein the first and second plasma generators 20 and 40 provide sufficient cleaning plasma to the plasma reaction chamber 10 and the main pipe 32 of the three-way pipe 31, respectively. As shown in FIG. 3 , the second embodiment of the semiconductor plasma device of the present invention further provides a fifth gas valve 461 on the external gas pipe 462. The control unit 39 is electrically connected to the fifth gas valve 461 and controls the valve opening of the fifth gas valve 461 to determine the amount of external gas flowing into the gas channel 45.

In summary, the semiconductor plasma equipment of the present invention is mainly provided with two plasma generators to respectively provide sufficient cleaning plasma to the plasma reaction chamber and the main pipe of the three-way pipe for cleaning the inner wall surface; wherein the second plasma generator 40 is arranged at the first pipe opening of the main pipe of the three-way pipe, and when the first pumping pump evacuates the plasma reaction chamber, the negative pressure gas flow will pass through the plasma generator 40 to evacuate the plasma reaction chamber. The plasma chamber is used for the negative pressure airflow. When the negative pressure airflow passes through the plasma chamber, the particles therein will be eliminated by the plasma, and the plasma will be carried to the main pipe of the three-way pipe to clean the inner wall of the main pipe, and continuously maintain the inner wall of the main pipe without the deposition of particles, effectively reducing the frequency of manual cleaning or replacement of the three-way pipe, which is particularly suitable for semiconductor plasma equipment with advanced processes (below 10nm) that are susceptible to particle dusting.

The above is only an embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as above by the embodiment, it is not used to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes or modifications to the technical contents disclosed above as equivalent embodiments within the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of the technical solution of the present invention.

10: Plasma reaction chamber

100: Top

101: Bottom

11: Plasma inlet

12: First exhaust gas outlet

13: Second exhaust gas outlet

20: First plasma generator

21: Plasma chamber

22: Matching circuit

23: Power supply

30: Negative pressure exhaust device

31: Tee pipe

32: Supervisor

321: First pipe opening

322: Second pipe opening

33: Lateral tube

331: The third pipe opening

34: First air pump

35: Second vacuum pump

351: Fourth air valve

36: First air valve

37: Second air valve

38: Third air valve

39: Control unit

40: Second plasma generator

41: Plasma chamber

411: First opening

412: Second opening

42: Shell

43: First flange joint

44: Second flange joint

45: Gas channel

46: Third flange joint

47: Coil

48: Matching circuit

49: Power supply

Claims (19)

A semiconductor plasma device comprises: A plasma reaction chamber, which is respectively provided with a plasma inlet, a first exhaust gas outlet and a second exhaust gas outlet; A first plasma generator, which is arranged at the plasma inlet of the plasma reaction chamber, and provides a sufficient amount of plasma for cleaning the plasma reaction chamber; and A negative pressure exhaust device, which is arranged at the first exhaust gas outlet and the second exhaust gas outlet of the plasma reaction chamber, and comprises: A three-way pipe, which comprises a main pipe and a side pipe which are interconnected, the main pipe has a first pipe opening and a second pipe opening, and the side pipe comprises a third pipe opening; A first vacuum pump is connected to the second pipe port of the main pipe of the three-way pipe to extract the air in the plasma reaction chamber and generate a negative pressure gas flow through the main pipe of the three-way pipe, so that the plasma reaction chamber is in a negative pressure state; A second vacuum pump is connected to the second exhaust gas outlet of the plasma reaction chamber and the third pipe port of the side pipe of the three-way pipe to extract the air in the plasma reaction chamber so that the plasma reaction chamber is maintained in a negative pressure state; and A second plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is connected to the first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure air flows through the plasma chamber and then enters the main pipe of the three-way pipe, and the second plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure air flows. The semiconductor plasma equipment as described in claim 1 further comprises: a first gas valve disposed in the main pipe of the three-way pipe; a second gas valve disposed in the side pipe of the three-way pipe; a third gas valve disposed between the first exhaust gas outlet and the first opening of the second plasma generator; a fourth gas valve disposed at the junction of the second exhaust pump and the second exhaust gas outlet; and a control unit electrically connected to the first plasma generator and the second plasma generator, the first exhaust pump and the second exhaust pump, and the first to fourth gas valves, and having built-in: A process sequence, wherein the control unit activates the first exhaust pump and opens the first and third gas valves, so that the first exhaust pump exhausts the plasma reaction chamber through the main pipe of the three-way pipe. When the negative pressure state of the plasma reaction chamber reaches a vacuum state, the first gas valve is kept open and the first exhaust pump is opened, the third gas valve is closed, the second gas valve and the fourth gas valve are opened, and the second exhaust pump is activated to maintain the vacuum state in the plasma reaction chamber to perform a semiconductor process; and A cleaning procedure is executed after the semiconductor process in the process sequence is completed. The control unit maintains the first gas valve and the first vacuum pump open, closes the second gas valve and the fourth gas valve, opens the third gas valve, and starts the first plasma generator and the second plasma generator; wherein the first plasma generator and the second plasma generator provide sufficient cleaning plasma to the plasma reaction chamber and the main pipe of the three-way pipe respectively. The semiconductor plasma device as described in claim 2, wherein: The first plasma generator obtains an external gas and ignites to generate a cleaning plasma; and The second plasma generator obtains another external gas and ignites to generate a cleaning plasma. A semiconductor plasma device as described in claim 1 or 2, wherein: The first plasma generator obtains an external gas and ignites it to generate a cleaning plasma, wherein the remaining external gas flows into the negative pressure air flow; and The second plasma generator uses the remaining external gas in the negative pressure air flow to ignite it to generate a cleaning plasma. The semiconductor plasma apparatus as described in claim 3, wherein the second plasma generator is an inductively coupled plasma generator, wherein an inductive element is disposed outside the plasma chamber, and the inductive element is electrically connected to a power supply via an impedance matcher. The semiconductor plasma device as described in claim 5, wherein the plasma chamber of the second plasma generator is disposed in an outer shell, and the outer shell is provided with: A first flange joint, which is connected to the first opening of the plasma chamber and matched with the first exhaust gas outlet of the plasma reaction chamber; and A second flange joint, which is matched with the first pipe opening of the main pipe of the three-way pipe. The semiconductor plasma equipment as described in claim 6, wherein a third flange joint is further provided on the outer casing to match a pipe opening of an external gas tube. The semiconductor plasma equipment as described in claim 7, wherein the power of the power source used by the second plasma generator is between 100W and 300W, and the frequency is between 4MHz and 13MHz. The semiconductor plasma equipment as described in claim 8, wherein the external gas used in the first plasma generator and the second plasma generator is CF4 or NF3. The semiconductor plasma equipment as described in claim 7, wherein a fifth gas valve is provided in the external gas tube, and the control unit is electrically connected to the fifth gas valve and controls the valve opening of the fifth gas valve. A negative pressure exhaust device for semiconductor plasma equipment is provided for a first exhaust gas outlet and a second exhaust gas outlet provided in a plasma reaction chamber, and includes: A three-way pipe, which includes a main pipe and a side pipe connected to each other, the main pipe has a first pipe opening and a second pipe opening, and the side pipe includes a third pipe opening; A first exhaust pump, which is connected to the second pipe opening of the main pipe of the three-way pipe and generates a negative pressure gas flow through the main pipe of the three-way pipe; A second exhaust pump, which is connected to the second exhaust gas outlet of the plasma reaction chamber and connected to the third pipe opening of the side pipe of the three-way pipe; and A plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is for connecting to the first exhaust gas outlet of the plasma reaction chamber, and the second opening is for connecting to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure air flows through the plasma chamber and then enters the main pipe of the three-way pipe, and the plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure air flows. The negative pressure exhaust device of the semiconductor plasma equipment as described in claim 11 further comprises: a first air valve disposed in the main pipe of the three-way pipe; a second air valve disposed in the side pipe of the three-way pipe; a third air valve disposed in the first opening of the plasma generator; a fourth air valve disposed at the junction of the second vacuum pump and the second exhaust gas outlet; and A control unit is electrically connected to the plasma generator, the first and second vacuum pumps, and the first to fourth air valves. When the plasma generator is started, the first and third air valves are opened, the second and fourth air valves are closed, and the first and second vacuum pumps are started to generate sufficient cleaning plasma for the main pipe of the three-way pipe. A negative pressure exhaust device for semiconductor plasma equipment as described in claim 12, wherein the plasma generator obtains an external gas and ignites it to generate cleaning plasma. A negative pressure exhaust device for a semiconductor plasma apparatus as described in claim 13, wherein the plasma generator is an inductively coupled plasma generator, wherein an inductive element is disposed outside the plasma chamber, and the inductive element is electrically connected to a power supply via an impedance matcher. A negative pressure exhaust device for semiconductor plasma equipment as described in claim 14, wherein the plasma chamber of the plasma generator is disposed in an outer shell, and the outer shell is provided with: a first flange joint, which is connected to the first opening of the plasma chamber and is matched with the first exhaust gas outlet of the plasma reaction chamber; and a second flange joint, which is matched with the first pipe opening of the main pipe of the three-way pipe. A negative pressure exhaust device for semiconductor plasma equipment as described in claim 15, wherein: a third flange joint is further provided on the outer casing to match a pipe opening of an external gas tube. A negative pressure exhaust device for a semiconductor plasma device as described in claim 16, wherein the power of the power source used in the plasma generator is between 100 W and 300 W, and the frequency is between 4 MHz and 13 MHz. A negative pressure exhaust device for a semiconductor plasma apparatus as described in claim 17, wherein the external gas used in the plasma generator is CF4 or NF3. A negative pressure exhaust device for semiconductor plasma equipment as described in claim 16, wherein the external gas pipe is provided with a fifth gas valve, the control unit is electrically connected to the fifth gas valve, and controls the valve opening of the fifth gas valve.

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