[go: up one dir, main page]

TWI877375B - Substrate processing device and flushing method of gas supply pipe - Google Patents

Substrate processing device and flushing method of gas supply pipe Download PDF

Info

Publication number
TWI877375B
TWI877375B TW110120392A TW110120392A TWI877375B TW I877375 B TWI877375 B TW I877375B TW 110120392 A TW110120392 A TW 110120392A TW 110120392 A TW110120392 A TW 110120392A TW I877375 B TWI877375 B TW I877375B
Authority
TW
Taiwan
Prior art keywords
gas
valve
flushing
gas supply
processing chamber
Prior art date
Application number
TW110120392A
Other languages
Chinese (zh)
Other versions
TW202213500A (en
Inventor
阿部純一
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202213500A publication Critical patent/TW202213500A/en
Application granted granted Critical
Publication of TWI877375B publication Critical patent/TWI877375B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H10P72/0402—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L58/00—Protection of pipes or pipe fittings against corrosion or incrustation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/02—Pipe-line systems for gases or vapours
    • F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D3/00—Arrangements for supervising or controlling working operations
    • F17D3/01—Arrangements for supervising or controlling working operations for controlling, signalling, or supervising the conveyance of a product
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

[課題] 提供一種「可一面抑制供給配管內之腐蝕，一面更安全地將處理腔室開放於大氣」的基板處理裝置及氣體供給配管之沖洗方法。 [解決手段] 基板處理裝置，係具有：處理腔室；氣體供給配管；處理氣體配管；沖洗氣體配管；及連動開放部。處理腔室，係在內部藉由腐蝕性之處理氣體來對基板施予處理的處理腔室。氣體供給配管，係被連接於處理腔室並連通至處理腔室之內部的配管。處理氣體配管，係經由第1閥被連接於氣體供給配管，將處理氣體導入至氣體供給配管。沖洗氣體配管，係在第1閥之處理腔室側，經由第2閥被連接於氣體供給配管，將沖洗氣體導入至氣體供給配管。連動開放部，係在第1閥關閉的狀態下，與對處理腔室之內部的大氣導入連動地打開第2閥。 [Topic] Provide a substrate processing device and a method for flushing a gas supply pipe that can "open a processing chamber to the atmosphere more safely while suppressing corrosion in the supply pipe." [Solution] The substrate processing device comprises: a processing chamber; a gas supply pipe; a processing gas pipe; a flushing gas pipe; and a linked opening portion. The processing chamber is a processing chamber in which a corrosive processing gas is used to process a substrate. The gas supply pipe is a pipe connected to the processing chamber and connected to the inside of the processing chamber. The processing gas pipe is connected to the gas supply pipe via a first valve to introduce the processing gas into the gas supply pipe. The flushing gas piping is connected to the gas supply piping via the second valve on the processing chamber side of the first valve, and the flushing gas is introduced into the gas supply piping. The linkage opening part opens the second valve in linkage with the introduction of the atmosphere into the processing chamber when the first valve is closed.

Description

基板處理裝置及氣體供給配管之沖洗方法Substrate processing device and flushing method of gas supply pipe

本揭示，係關於基板處理裝置及氣體供給配管之沖洗方法。 This disclosure relates to a method for flushing a substrate processing device and a gas supply pipe.

在基板處理裝置中，係為了執行關於元件形成之處理，通常通過供給配管對處理腔室供給腐蝕性的處理氣體。基板處理裝置，係在定期進行之維護時，處理腔室的蓋子被開啟而處理腔室內部曝露於大氣。此時，大氣亦進入連通於處理腔室之供給配管內，供給配管內所殘留的處理氣體會與大氣中之水分反應而生成例如HCl等的腐蝕性之物質。因該腐蝕性之物質腐蝕供給配管內而成為微粒的原因。為了抑制供給配管內之腐蝕，提案一種「從開啟處理腔室的蓋子而大氣開放之前，使沖洗氣體流動」的技術。 In a substrate processing device, in order to perform processing related to device formation, a corrosive processing gas is usually supplied to the processing chamber through a supply pipe. During regular maintenance of the substrate processing device, the lid of the processing chamber is opened and the inside of the processing chamber is exposed to the atmosphere. At this time, the atmosphere also enters the supply pipe connected to the processing chamber, and the processing gas remaining in the supply pipe reacts with the moisture in the atmosphere to generate corrosive substances such as HCl. This is because the corrosive substances corrode the supply pipe and become particles. In order to suppress corrosion in the supply pipe, a technology of "flowing flushing gas from opening the lid of the processing chamber to the atmosphere" is proposed.

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2017-092310號公報 [Patent Document 1] Japanese Patent Publication No. 2017-092310

本揭示，係提供一種「可一面抑制供給配管內之腐蝕，一面更安全地將處理腔室開放於大氣」的基板處理裝置及氣體供給配管之沖洗方法。 This disclosure provides a substrate processing device and a method for flushing a gas supply pipe that can "suppress corrosion in the supply pipe while opening the processing chamber to the atmosphere more safely."

本揭示之一態樣的基板處理裝置，係具有：處理腔室；氣體供給配管；處理氣體配管；沖洗氣體配管；及連動開放部。處理腔室，係在內部藉由腐蝕性之處理氣體來對基板施予處理的處理腔室。氣體供給配管，係被連接於處理腔室並連通至處理腔室之內部的配管。處理氣體配管，係經由第1閥被連接於氣體供給配管，將處理氣體導入至氣體供給配管。沖洗氣體配管，係在第1閥之處理腔室側，經由第2閥被連接於氣體供給配管，將沖洗氣體導入至氣體供給配管。連動開放部，係在第1閥關閉的狀態下，與對處理腔室之內部的大氣導入連動地打開第2閥。 One aspect of the present disclosure is a substrate processing device having: a processing chamber; a gas supply pipe; a processing gas pipe; a flushing gas pipe; and a linked opening. The processing chamber is a processing chamber in which a substrate is processed by a corrosive processing gas. The gas supply pipe is a pipe connected to the processing chamber and connected to the interior of the processing chamber. The processing gas pipe is connected to the gas supply pipe via a first valve to introduce the processing gas into the gas supply pipe. The flushing gas pipe is connected to the gas supply pipe via a second valve on the processing chamber side of the first valve to introduce the flushing gas into the gas supply pipe. The linked opening part opens the second valve in conjunction with the introduction of atmospheric air into the processing chamber when the first valve is closed.

根據本揭示，可一面抑制供給配管內之腐蝕，一面更安全地將處理腔室開放於大氣。 According to the present disclosure, corrosion in the supply piping can be suppressed while the processing chamber can be opened to the atmosphere more safely.

1:基板處理裝置 1: Substrate processing equipment

10:本體部 10: Main body

20:控制裝置 20: Control device

30:處理腔室 30: Processing chamber

31:蓋子 31: Lid

31a:分隔壁 31a: Partition wall

32:本體 32: Body

32a:處理室 32a: Processing room

33:噴淋板 33:Spray board

34:氣體供給配管 34: Gas supply piping

35:第1閥 35: Valve No. 1

36:處理氣體配管 36: Processing gas piping

40:處理氣體供給部 40: Processing gas supply unit

41:第2閥 41: Valve No. 2

42:沖洗氣體配管 42: Flushing gas piping

43:凸緣 43: flange

44:沖洗治具 44: Rinse fixture

45:機械閥 45: Mechanical valve

49:驅動用配管 49: Driving piping

50:沖洗氣體供給配管 50: Flushing gas supply piping

51:沖洗氣體供給部 51: Flushing gas supply unit

60:天線 60: Antenna

61,71:匹配器 61,71:Matcher

62,72:高頻電源 62,72: High frequency power supply

70:載置台 70: Loading platform

G:基板 G: Substrate

[圖1]圖1，係表示本揭示的一實施形態中之基板處理裝置之一例的概略剖面圖。 [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing device in an embodiment of the present disclosure.

[圖2]圖2，係表示本實施形態之沖洗治具的構成之一例的圖。 [Figure 2] Figure 2 is a diagram showing an example of the structure of the flushing jig of this embodiment.

[圖3]圖3，係表示相對於各噴淋板的沖洗流量之一例的圖。 [Figure 3] Figure 3 is a diagram showing an example of the flushing flow rate relative to each spray plate.

[圖4]圖4，係表示沖洗處理之一例的流程圖。 [Figure 4] Figure 4 is a flow chart showing an example of flushing processing.

以下，基於圖面，詳細地說明關於所揭示的基板處理裝置及氣體供給配管之沖洗方法的實施形態。另外，揭示之技術並不受以下的實施形態所限定。 Below, based on the drawings, the implementation form of the disclosed substrate processing device and the flushing method of the gas supply pipe is described in detail. In addition, the disclosed technology is not limited to the following implementation form.

在基板處理裝置之維護中，當「為了抑制供給配管內之腐蝕，從開啟處理腔室的蓋子而大氣開放之前，將沖洗氣體供給至供給配管內」時，則存在有處理腔室內成為正壓且與處理腔室的蓋子打開同時，內部之沖洗氣體一口氣噴出而在安全上並不佳的情形。另一方面，當「在打開處理腔室的蓋子後，將沖洗氣體供給至供給配管內」時，則存在有大氣進入供給配管內而導致供給配管腐蝕的情形。因此，期望可一面抑制供給配管內之腐蝕，一面更安全地將處理腔室開放於大氣。 In the maintenance of substrate processing equipment, when "in order to suppress corrosion in the supply piping, the flushing gas is supplied to the supply piping before the lid of the processing chamber is opened and the atmosphere is released", there is a situation where the processing chamber becomes positively pressurized and the flushing gas inside is ejected at once when the lid of the processing chamber is opened, which is not good in terms of safety. On the other hand, when "the flushing gas is supplied to the supply piping after the lid of the processing chamber is opened", there is a situation where the atmosphere enters the supply piping and causes corrosion of the supply piping. Therefore, it is expected that the corrosion in the supply piping can be suppressed while the processing chamber can be opened to the atmosphere more safely.

[基板處理裝置1之構成] [Structure of substrate processing device 1]

圖1，係表示本揭示的一實施形態中之基板處理裝置之一例的概略剖面圖。本實施形態中之電漿處理裝置1，係例如電漿處理裝置，其生成感應耦合電漿(ICP)並使用所生成的電漿，對矩形狀之基板G施予蝕刻或灰化、成膜等的電漿處理。在本實施形態中，基板G，係例如FPD(Flat Panel Display)用之玻璃基板。 FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing device in an embodiment of the present disclosure. The plasma processing device 1 in this embodiment is, for example, a plasma processing device that generates inductively coupled plasma (ICP) and uses the generated plasma to perform plasma processing such as etching, ashing, and film formation on a rectangular substrate G. In this embodiment, the substrate G is, for example, a glass substrate for FPD (Flat Panel Display).

基板處理裝置1，係具有本體部10及控制裝置20。本體部10，係例如具有：角筒形狀之氣密的處理腔室30，藉由內壁面經陽極氧化處理之鋁等的導電性材料所形成。處理腔室30，係接地。處理腔室30，係藉由具有複數個噴淋板33之分隔壁31a，劃分上部的蓋子31與下部的本體32。分隔壁31a，係具有介電質窗或金屬窗。由分隔壁31a與本體32所包圍的空間成為處理室32a。蓋子31與本體32，係通常時雖為密閉，但可在A-A面分割，在維護時，係蓋子31側例如往上方向移動而脫離，藉此，本體32內(處理室32a)向大氣開放。 The substrate processing device 1 has a main body 10 and a control device 20. The main body 10 has, for example, a square tube-shaped airtight processing chamber 30 formed of a conductive material such as aluminum with an inner wall surface subjected to anodizing treatment. The processing chamber 30 is grounded. The processing chamber 30 is divided into an upper cover 31 and a lower main body 32 by a partition wall 31a having a plurality of spray plates 33. The partition wall 31a has a dielectric window or a metal window. The space surrounded by the partition wall 31a and the main body 32 becomes a processing chamber 32a. The cover 31 and the body 32 are normally sealed, but can be separated at the A-A plane. During maintenance, the cover 31 is detached by moving the side, for example, upward, thereby opening the inside of the body 32 (processing chamber 32a) to the atmosphere.

在各噴淋板33，係分別連接有氣體供給配管34。各氣體供給配管34，係用以將從處理腔室30的外部所供給之氣體導入至各噴淋板33的配管。從氣體供給配管34被供給至噴淋板33之氣體，係在噴淋板33內之未圖示的擴散室擴散，並從氣體吐出孔33a被供給至處理室32a。 Each spray plate 33 is connected to a gas supply pipe 34. Each gas supply pipe 34 is used to introduce the gas supplied from the outside of the processing chamber 30 to each spray plate 33. The gas supplied from the gas supply pipe 34 to the spray plate 33 is diffused in a diffusion chamber (not shown) in the spray plate 33, and is supplied to the processing chamber 32a from the gas discharge hole 33a.

氣體供給配管34，係經由第1閥35被連接於處理氣體配管36。亦即，氣體供給配管34，係從處理腔室 30的外部連通至處理腔室30之內部的噴淋板33。處理氣體配管36，係經由FRC(Flow Ratio Controller)37、蓋側閥38及本體側閥39被連接於處理氣體供給部40。FRC37，係將由處理氣體供給部40內之MFC(Mass Flow Controller)等的流量控制器所決定之流量依預定的比率進行分配。亦即，雖未圖示，但處理氣體配管36，係直至蓋側閥38為止，例如為1根，在從蓋側閥38至FRC37之間分歧成複數根處理氣體配管36。在經分歧之各處理氣體配管36，係分別設置有FRC37及第1閥35，各個氣體供給配管34被連接於各第1閥35。各氣體供給配管34，係分別被連接於位在分隔壁31a之不同區域的噴淋板33，可藉由調節各FRC37之氣體分配的方式，控制處理氣體的供給分佈。蓋側閥38及本體側閥39，係用以「藉由在打開蓋子31時進行關閉而可將處理氣體配管36分割成蓋子31側與本體32側」的閥。 The gas supply pipe 34 is connected to the process gas pipe 36 via the first valve 35. That is, the gas supply pipe 34 is connected from the outside of the process chamber 30 to the spray plate 33 inside the process chamber 30. The process gas pipe 36 is connected to the process gas supply unit 40 via the FRC (Flow Ratio Controller) 37, the cover side valve 38 and the body side valve 39. The FRC 37 distributes the flow rate determined by the flow controller such as the MFC (Mass Flow Controller) in the process gas supply unit 40 according to a predetermined ratio. That is, although not shown, the process gas pipe 36 is, for example, one pipe until the cover side valve 38, and branches into a plurality of process gas pipes 36 between the cover side valve 38 and the FRC 37. Each of the branched process gas pipes 36 is provided with an FRC 37 and a first valve 35, and each gas supply pipe 34 is connected to each first valve 35. Each gas supply pipe 34 is connected to the spray plate 33 located in a different area of the partition wall 31a, and the supply distribution of the process gas can be controlled by adjusting the gas distribution of each FRC 37. The cover side valve 38 and the body side valve 39 are valves used to "separate the process gas piping 36 into the cover 31 side and the body 32 side by closing when the cover 31 is opened."

處理氣體供給部40，係具有氣體供給源、MFC等的流量控制器及閥。流量控制器，係在閥被開啟的狀態下，控制從氣體供給源所供給之處理氣體的流量，並將流量經控制的處理氣體供給至處理氣體配管36。處理氣體，係例如O2氣體或Cl2氣體、BCl3氣體這樣的氯系氣體(腐蝕性氣體)抑或該些混合氣體等。又，處理氣體供給部40，係相同地，將N2氣體等的惰性氣體供給至處理氣體配管36。 The processing gas supply unit 40 includes a gas supply source, a flow controller such as MFC, and a valve. The flow controller controls the flow rate of the processing gas supplied from the gas supply source when the valve is opened, and supplies the processing gas with the controlled flow rate to the processing gas piping 36. The processing gas is, for example, a chlorine-based gas (corrosive gas) such as O2 gas, Cl2 gas, or BCl3 gas, or a mixed gas thereof. In addition, the processing gas supply unit 40 similarly supplies an inert gas such as N2 gas to the processing gas piping 36.

在各第1閥35之噴淋板33側的各氣體供給配管34，係分別經由第2閥41連接有各沖洗氣體配管42。各 沖洗氣體配管42，係經由凸緣43被連接於沖洗治具44。第2閥41，係切換從沖洗氣體配管42所供給之沖洗氣體對氣體供給配管34的供給/停止。又，第2閥41，係空氣驅動方式的閥，經由機械閥45連接有驅動用配管49。驅動用配管49，係被連接於沖洗治具44。凸緣43，係用以可分割地連接各沖洗氣體配管42者。各沖洗氣體配管42，係可在凸緣43中，分割成處理腔室30側與沖洗治具44側。亦即，凸緣43，係在維護時連接沖洗治具44並供給沖洗氣體的維護氣體埠。 Each gas supply pipe 34 on the spray plate 33 side of each first valve 35 is connected to each flushing gas pipe 42 via a second valve 41. Each flushing gas pipe 42 is connected to a flushing jig 44 via a flange 43. The second valve 41 switches the supply/stop of the flushing gas supplied from the flushing gas pipe 42 to the gas supply pipe 34. In addition, the second valve 41 is an air-driven valve, and is connected to a driving pipe 49 via a mechanical valve 45. The driving pipe 49 is connected to the flushing jig 44. The flange 43 is used to connect each flushing gas pipe 42 in a separable manner. Each flushing gas pipe 42 can be divided into the processing chamber 30 side and the flushing fixture 44 side in the flange 43. That is, the flange 43 is a maintenance gas port that connects to the flushing fixture 44 and supplies flushing gas during maintenance.

機械閥45，係能以機械動作控制開關的閥。機械閥45，係具有閥部46與檢測部47。閥部46，係藉由切換從驅動用配管49所導入的沖洗氣體之供給/停止的方式，控制第2閥41之開關。檢測部47，係控制閥部46之開關的切換器，被設置於蓋子31側。在與檢測部47對向之本體32側的位置，係設置有用以按壓檢測部47的塊體48。在蓋子31關閉的情況下，檢測部47，係與塊體48接觸而被按壓的狀態，閥部46為關閉。另一方面，在蓋子31開啟(蓋子31從本體32脫離)的情況下，檢測部47，係成為離開塊體48而未被按壓的狀態，閥部46為開啟。另外，在圖1中，係雖被圖示為閥部46與檢測部47位於分開的位置，但閥部46與檢測部47被一體化，且閥部46與檢測部47機械地連接。另外，驅動用配管49，係與機械閥45可分離地連接。 The mechanical valve 45 is a valve that can control the switch by mechanical action. The mechanical valve 45 has a valve part 46 and a detection part 47. The valve part 46 controls the switch of the second valve 41 by switching the supply/stop mode of the flushing gas introduced from the driving pipe 49. The detection part 47 is a switch that controls the switch of the valve part 46, and is arranged on the cover 31 side. A block 48 for pressing the detection part 47 is arranged at a position on the body 32 side opposite to the detection part 47. When the cover 31 is closed, the detection part 47 is in a state of being pressed by being in contact with the block 48, and the valve part 46 is closed. On the other hand, when the cover 31 is opened (the cover 31 is separated from the body 32), the detection part 47 is separated from the block 48 and is not pressed, and the valve part 46 is open. In addition, in FIG. 1, although the valve part 46 and the detection part 47 are shown to be in separate positions, the valve part 46 and the detection part 47 are integrated and mechanically connected. In addition, the driving pipe 49 is detachably connected to the mechanical valve 45.

沖洗治具44，係經由沖洗氣體供給配管50被 連接於沖洗氣體供給部51。沖洗氣體供給部51，係具有氣體供給源、MFC等的流量控制器及閥。流量控制器，係在閥被開啟的狀態下，控制從氣體供給源所供給之沖洗氣體的流量，並將流量經控制的沖洗氣體供給至沖洗氣體供給配管50。沖洗氣體，係例如可使用乾空氣等。另外，沖洗治具44，係為了清洗處理腔室30內，亦可供給水蒸氣。 The flushing jig 44 is connected to the flushing gas supply unit 51 via the flushing gas supply pipe 50. The flushing gas supply unit 51 has a gas supply source, a flow controller and a valve such as MFC. The flow controller controls the flow of the flushing gas supplied from the gas supply source when the valve is opened, and supplies the flushing gas with a controlled flow to the flushing gas supply pipe 50. The flushing gas may be, for example, dry air. In addition, the flushing jig 44 may also be supplied with water vapor in order to clean the processing chamber 30.

在此，使用圖2，說明關於沖洗治具44。圖2，係表示本實施形態之沖洗治具的構成之一例的圖。如圖2所示般，沖洗治具44，係從沖洗氣體供給配管50側依序具有手動閥52、調整器53、複數個流量計55、複數個針閥56及複數個過濾器57，並經由沖洗治具44外的凸緣43被連接於各沖洗氣體配管42。又，配管49a從連接手動閥52與調整器53之間的配管分歧，並被連接於沖洗治具44外的驅動用配管49。又，沖洗治具44，係在開啟蓋子31之維護時設置，並經由凸緣43連接有處理腔室30側的各沖洗氣體配管42與沖洗治具44側的各沖洗氣體配管42。而且，在維護時，係驅動用配管49亦被連接於機械閥45。另外，沖洗治具44，係在通常時，亦可被設置為基板處理裝置1的一部分。 Here, the flushing jig 44 is described using FIG. 2. FIG. 2 is a diagram showing an example of the structure of the flushing jig of the present embodiment. As shown in FIG. 2, the flushing jig 44 has a manual valve 52, a regulator 53, a plurality of flow meters 55, a plurality of needle valves 56, and a plurality of filters 57 in order from the flushing gas supply piping 50 side, and is connected to each flushing gas piping 42 via a flange 43 outside the flushing jig 44. In addition, the piping 49a is branched from the piping connecting the manual valve 52 and the regulator 53, and is connected to the driving piping 49 outside the flushing jig 44. Furthermore, the flushing jig 44 is provided during maintenance when the lid 31 is opened, and the flushing gas pipes 42 on the processing chamber 30 side and the flushing gas pipes 42 on the flushing jig 44 side are connected via the flange 43. Moreover, during maintenance, the driving pipe 49 is also connected to the mechanical valve 45. In addition, the flushing jig 44 can also be provided as a part of the substrate processing device 1 under normal circumstances.

手動閥52，係手動地對經由沖洗氣體供給配管50而從沖洗氣體供給部51所供給之沖洗氣體進行開關的閥。當在沖洗治具44之設置後，確認到各沖洗氣體配管42及驅動用配管49的連接時，由操作員打開手動閥52。調整器53，係調整供給至各沖洗氣體配管42之沖洗氣體的壓 力。壓力計54，係計測調整器53中之壓力。調整器53之輸出側的配管42a分歧，分別連接於複數個流量計55。各流量計55，係計測輸出至各沖洗氣體配管42之沖洗氣體的流量。針閥56，係調整各沖洗氣體配管42的流量。過濾器57，係用以去除沖洗氣體中之微粒子等的過濾器。 The manual valve 52 is a valve for manually opening and closing the flushing gas supplied from the flushing gas supply unit 51 via the flushing gas supply pipe 50. After the flushing jig 44 is installed, the operator opens the manual valve 52 after confirming the connection between each flushing gas pipe 42 and the drive pipe 49. The regulator 53 adjusts the pressure of the flushing gas supplied to each flushing gas pipe 42. The pressure gauge 54 measures the pressure in the regulator 53. The pipe 42a on the output side of the regulator 53 is branched and connected to a plurality of flow meters 55 respectively. Each flow meter 55 measures the flow rate of the flushing gas output to each flushing gas pipe 42. The needle valve 56 adjusts the flow rate of each flushing gas pipe 42. The filter 57 is a filter for removing microparticles in the flushing gas.

在此，使用圖3，說明相對於各噴淋板33的沖洗氣體之流量的一例。圖3，係表示相對於各噴淋板33的沖洗流量之一例的圖。圖3所示之氣體供給配管34a，係將複數個氣體供給配管34中之一個抽出者。氣體供給配管34a，係進一步分歧成被連接於各噴淋板33的複數個氣體供給配管34b。在圖3之例子中，當例如52L/min的沖洗氣體被供給至氣體供給配管34a時，沖洗氣體，係均等地被分配至氣體供給配管34b之各者。各氣體供給配管34b，係將6.5L/min的沖洗氣體供給至各噴淋板33。在使用乾空氣作為沖洗氣體的情況下，只要可對各噴淋板33進行5L/min以上的乾空氣沖洗，則可抑制大氣侵入至氣體供給配管34。因此，在圖3之例子中，係可抑制氣體供給配管34、34a、34b內及噴淋板33內的腐蝕。 Here, an example of the flow rate of flushing gas relative to each spray plate 33 is explained using FIG. 3 . FIG. 3 is a diagram showing an example of the flushing flow rate relative to each spray plate 33 . The gas supply pipe 34a shown in FIG. 3 extracts one of the plurality of gas supply pipes 34 . The gas supply pipe 34a is further divided into a plurality of gas supply pipes 34b connected to each spray plate 33 . In the example of FIG. 3 , when, for example, 52 L/min of flushing gas is supplied to the gas supply pipe 34a , the flushing gas is evenly distributed to each of the gas supply pipes 34b . Each gas supply pipe 34b supplies 6.5 L/min of flushing gas to each spray plate 33 . When dry air is used as the flushing gas, as long as each spray plate 33 can be flushed with dry air at a rate of 5 L/min or more, the intrusion of atmospheric air into the gas supply pipe 34 can be suppressed. Therefore, in the example of FIG. 3 , corrosion in the gas supply pipes 34, 34a, 34b and the spray plate 33 can be suppressed.

返回到圖1之說明。在蓋子31內，係設置有天線60。天線60，係藉由銅等導電性高的金屬，被形成為環狀或螺旋狀等的任意形狀。天線60，係藉由未圖示的間隔件與分隔壁31a分離。 Return to the description of Figure 1. An antenna 60 is provided inside the cover 31. The antenna 60 is formed into any shape such as a ring or a spiral by a highly conductive metal such as copper. The antenna 60 is separated from the partition wall 31a by a spacer not shown.

高頻電源62經由匹配器61被連接於天線60。高頻電源62，係經由匹配器61，將例如13.56MHz之頻率 的高頻電力供給至天線60。藉此，在位於天線60之下方的處理室32a內形成有感應電場。藉由被形成於處理室32a內之感應電場，從噴淋板33所供給的處理氣體被電漿化，在處理室32a內生成感應耦合電漿。高頻電源62及天線60，係電漿生成機構的一例。 The high-frequency power source 62 is connected to the antenna 60 via the matching device 61. The high-frequency power source 62 supplies high-frequency power of, for example, 13.56 MHz to the antenna 60 via the matching device 61. As a result, an induced electric field is formed in the processing chamber 32a located below the antenna 60. The processing gas supplied from the shower plate 33 is plasmatized by the induced electric field formed in the processing chamber 32a, and inductively coupled plasma is generated in the processing chamber 32a. The high-frequency power source 62 and the antenna 60 are an example of a plasma generating mechanism.

在本體32之底部，係配置有載置基板G的載置台70。載置台70，係被形成為與基板G之形狀對應的四角板狀或四角柱狀。於載置台70之上面，在載置基板G的載置面，係形成有用以保持基板G的靜電卡盤(未圖示)，在進行電漿處理的期間，基板G被固定於載置台70。 At the bottom of the body 32, a stage 70 for placing the substrate G is arranged. The stage 70 is formed into a square plate or square column shape corresponding to the shape of the substrate G. On the stage 70, on the placing surface for placing the substrate G, an electrostatic chuck (not shown) for holding the substrate G is formed. During the plasma treatment, the substrate G is fixed to the stage 70.

在載置台70，係連接有匹配器71及高頻電源72。高頻電源72，係經由匹配器71，將偏壓用之高頻電力供給至載置台70。高頻電源72，係偏壓電力供給機構的一例。偏壓用之高頻電力經由匹配器71被供給至載置台70，藉此，離子會被引入至載置台70所載置的基板G。藉由高頻電源72被供給至載置台70之高頻電力的頻率，係例如50kHz~10MHz之範圍的頻率，例如6MHz。又，在載置台70，係雖未圖示，但設置有用以供給傳熱氣體的配管、溫度調節機構及升降銷等。 The mounting table 70 is connected to a matching device 71 and a high-frequency power supply 72. The high-frequency power supply 72 supplies high-frequency power for bias to the mounting table 70 via the matching device 71. The high-frequency power supply 72 is an example of a bias power supply mechanism. The high-frequency power for bias is supplied to the mounting table 70 via the matching device 71, whereby ions are introduced into the substrate G mounted on the mounting table 70. The frequency of the high-frequency power supplied to the mounting table 70 by the high-frequency power supply 72 is, for example, a frequency in the range of 50kHz to 10MHz, for example, 6MHz. In addition, although not shown in the figure, the mounting table 70 is provided with a pipe for supplying heat transfer gas, a temperature adjustment mechanism, and a lifting pin, etc.

在本體32之側面，係設置有用以搬入搬出基板G之未圖示的開口及閘閥。又，在本體32之底部的外周側，係形成有複數個排氣口73。在各排氣口73，係分別經由排氣管74及APC(Auto Pressure Controller)閥75連接有真空泵76。藉由真空泵76對處理室32a內進行排氣，並調整 APC閥75之開合度，藉此，處理室32a內的壓力被維持在預定壓力。 On the side of the body 32, there are openings and gates (not shown) for carrying in and out the substrate G. In addition, on the outer peripheral side of the bottom of the body 32, a plurality of exhaust ports 73 are formed. Each exhaust port 73 is connected to a vacuum pump 76 via an exhaust pipe 74 and an APC (Auto Pressure Controller) valve 75. The vacuum pump 76 exhausts the processing chamber 32a and adjusts the opening and closing degree of the APC valve 75, thereby maintaining the pressure in the processing chamber 32a at a predetermined pressure.

控制裝置20，係具有記憶體、處理器及輸出入介面。控制裝置20內之處理器，係讀出並執行被儲存於控制裝置20內之記憶體的程式，藉此，經由控制裝置20之輸出入介面，控制本體部10的各部。 The control device 20 has a memory, a processor, and an input/output interface. The processor in the control device 20 reads and executes the program stored in the memory in the control device 20, thereby controlling the various parts of the main body 10 through the input/output interface of the control device 20.

[氣體供給配管之沖洗方法] [Method for flushing gas supply pipes]

其次，說明關於本實施形態中的氣體供給配管之沖洗方法。圖4，係表示沖洗處理之一例的流程圖。在圖4中，係從「在蓋子31之上部設置沖洗治具44，將各沖洗氣體配管42及驅動用配管49連接至處理腔室30側，並將沖洗氣體供給配管50連接至沖洗氣體供給部51」的狀態，開始說明。 Next, the flushing method of the gas supply piping in this embodiment is described. FIG. 4 is a flow chart showing an example of flushing treatment. In FIG. 4, the description starts from the state of "setting a flushing jig 44 on the upper part of the cover 31, connecting each flushing gas piping 42 and the driving piping 49 to the side of the processing chamber 30, and connecting the flushing gas supply piping 50 to the flushing gas supply part 51".

控制裝置20，係使N2氣體從處理氣體供給部40供給至氣體供給配管34(步驟S1)。N2氣體，係經由處理氣體配管36及第1閥35被導入至氣體供給配管34。其次，控制裝置20，係將第1閥35關閉(步驟S2)，使N2氣體的供給停止。亦即，成為N2氣體被封入至處理氣體配管36的狀態。又，控制裝置20，係將蓋側閥38及本體側閥39關閉。其後，由操作員關閉基板處理裝置1之電源。此時，沖洗治具44，係將沖洗氣體供給至各沖洗氣體配管42及驅動用配管49的狀態。 The control device 20 supplies N2 gas from the processing gas supply unit 40 to the gas supply pipe 34 (step S1). The N2 gas is introduced into the gas supply pipe 34 via the processing gas pipe 36 and the first valve 35. Next, the control device 20 closes the first valve 35 (step S2) to stop the supply of the N2 gas. That is, the N2 gas is sealed in the processing gas pipe 36. Furthermore, the control device 20 closes the cover side valve 38 and the body side valve 39. Thereafter, the operator turns off the power of the substrate processing device 1. At this time, the flushing jig 44 is in a state where the flushing gas is supplied to each of the flushing gas pipes 42 and the driving pipe 49.

在基板處理裝置1之電源被關閉的狀態下， 由操作員將蓋子31從本體32脫離，大氣被導入至處理腔室30的內部。亦即，處理室32a向大氣開放。機械閥45，係以檢測部47檢測蓋子31從本體32的脫離，並打開閥部46。藉由閥部46被打開而供給的沖洗氣體，打開第2閥41。當第2閥41被打開時，則各沖洗氣體配管42的沖洗氣體被供給至氣體供給配管34。亦即，與處理腔室30之大氣開放連動地，沖洗氣體被供給至氣體供給配管34(步驟S3)。 When the power of the substrate processing device 1 is turned off, the operator detaches the cover 31 from the body 32, and the atmosphere is introduced into the interior of the processing chamber 30. That is, the processing chamber 32a is opened to the atmosphere. The mechanical valve 45 detects the detachment of the cover 31 from the body 32 with the detection part 47, and opens the valve part 46. The flushing gas supplied by the opening of the valve part 46 opens the second valve 41. When the second valve 41 is opened, the flushing gas of each flushing gas pipe 42 is supplied to the gas supply pipe 34. That is, in conjunction with the opening of the processing chamber 30 to the atmosphere, the flushing gas is supplied to the gas supply pipe 34 (step S3).

由於被供給至氣體供給配管34之沖洗氣體，係持續從噴淋板33的氣體吐出孔33a吐出，因此，可阻止大氣侵入至氣體供給配管34內，並抑制氣體供給配管34內的腐蝕。又，由於是不借助人手而與處理腔室30之大氣開放連動地開始沖洗氣體對氣體供給配管34之供給，因此，在大氣開放時，處理腔室30內不會成為正壓且可更安全地將處理腔室開放於大氣。 Since the flushing gas supplied to the gas supply pipe 34 is continuously discharged from the gas discharge hole 33a of the spray plate 33, it is possible to prevent the atmosphere from invading the gas supply pipe 34 and suppress corrosion in the gas supply pipe 34. In addition, since the flushing gas is supplied to the gas supply pipe 34 in conjunction with the opening of the atmosphere of the processing chamber 30 without manual intervention, the processing chamber 30 will not be positively pressurized when the atmosphere is opened, and the processing chamber can be opened to the atmosphere more safely.

以上，根據各實施形態，基板處理裝置1，係具有：處理腔室30；氣體供給配管34；處理氣體配管36；沖洗氣體配管42；及連動開放部(機械閥45)。處理腔室30，係在內部藉由腐蝕性之處理氣體來對基板G施予處理的處理腔室。氣體供給配管34，係被連接於處理腔室30並連通至處理腔室30之內部的配管。處理氣體配管36，係經由第1閥35被連接於氣體供給配管34，將處理氣體導入至氣體供給配管34。沖洗氣體配管42，係在第1閥35之處理腔室30側，經由第2閥41被連接於氣體供給配管34，將沖洗氣體導入至氣體供給配管34。連動開放部，係在第1 閥35關閉的狀態下，與對處理腔室30之內部的大氣導入連動地打開第2閥41。其結果，可一面抑制氣體供給配管34內之腐蝕，一面更安全地將處理腔室30開放於大氣。 As described above, according to each embodiment, the substrate processing device 1 has: a processing chamber 30; a gas supply pipe 34; a processing gas pipe 36; a flushing gas pipe 42; and a linked opening portion (mechanical valve 45). The processing chamber 30 is a processing chamber in which a corrosive processing gas is used to process the substrate G. The gas supply pipe 34 is a pipe connected to the processing chamber 30 and connected to the inside of the processing chamber 30. The processing gas pipe 36 is connected to the gas supply pipe 34 via the first valve 35, and the processing gas is introduced into the gas supply pipe 34. The flushing gas pipe 42 is connected to the gas supply pipe 34 via the second valve 41 on the processing chamber 30 side of the first valve 35, and the flushing gas is introduced into the gas supply pipe 34. The linkage opening part opens the second valve 41 in linkage with the introduction of the atmosphere into the processing chamber 30 when the first valve 35 is closed. As a result, the processing chamber 30 can be opened to the atmosphere more safely while suppressing corrosion in the gas supply pipe 34.

又，根據本實施形態，處理腔室30，係被構成為藉由本體32與蓋子31而密閉。又，大氣導入，係藉由使蓋子31從本體32脫離的方式，將大氣導入至處理腔室30的內部。其結果，在使蓋子31從本體32脫離的時間點下，可將處理腔室30開放於大氣。 Furthermore, according to the present embodiment, the processing chamber 30 is configured to be sealed by the body 32 and the lid 31. Furthermore, the atmospheric air is introduced into the interior of the processing chamber 30 by separating the lid 31 from the body 32. As a result, the processing chamber 30 can be opened to the atmosphere at the time when the lid 31 is separated from the body 32.

又，根據本實施形態，連動開放部，係基於蓋子31從本體32脫離的方式，打開第2閥41。其結果，在使蓋子31從本體32脫離的時間點下，可將沖洗氣體供給至氣體供給配管34。 Furthermore, according to this embodiment, the linkage opening portion opens the second valve 41 based on the way the cover 31 is separated from the body 32. As a result, at the time when the cover 31 is separated from the body 32, the flushing gas can be supplied to the gas supply pipe 34.

又，根據本實施形態，連動開放部，係藉由機械閥45檢測蓋子31從本體32的脫離，並藉由從沖洗氣體配管42分歧而被供給至與機械閥45連接之驅動用配管49的沖洗氣體，打開第2閥41。其結果，即便在基板處理裝置1之電源被關閉的狀態下，亦可將沖洗氣體供給至氣體供給配管34。 Furthermore, according to this embodiment, the linked opening portion detects the separation of the cover 31 from the body 32 by the mechanical valve 45, and opens the second valve 41 by the flushing gas branched from the flushing gas piping 42 and supplied to the drive piping 49 connected to the mechanical valve 45. As a result, the flushing gas can be supplied to the gas supply piping 34 even when the power of the substrate processing device 1 is turned off.

又，根據本實施形態，沖洗氣體，係乾空氣。其結果，可抑制氣體供給配管34內之腐蝕。又，即便在大氣開放時持續供給沖洗氣體，亦不會對操作員造成影響。 Furthermore, according to this embodiment, the flushing gas is dry air. As a result, corrosion in the gas supply pipe 34 can be suppressed. Furthermore, even if the flushing gas is continuously supplied when the atmosphere is open, it will not affect the operator.

又，根據本實施形態，基板處理裝置1中的氣體供給配管之沖洗方法，係具有：「關閉經由第1閥35 被連接於氣體供給配管34而將處理氣體導入至氣體供給配管34的處理氣體配管36之第1閥35」的工程，該氣體供給配管34，係被連接於處理腔室30，該處理腔室30，係在內部藉由腐蝕性之處理氣體來對基板G施予處理；及「與對處理腔室30之內部的大氣導入連動地打開沖洗氣體配管42之第2閥41，並將沖洗氣體導入至氣體供給配管34」的工程，該沖洗氣體配管42，係在第1閥35之處理腔室30側，經由第2閥41被連接於氣體供給配管34。其結果，可一面抑制氣體供給配管34內之腐蝕，一面更安全地將處理腔室30開放於大氣。 Furthermore, according to the present embodiment, the flushing method of the gas supply piping in the substrate processing device 1 comprises the steps of: "closing the first valve 35 of the processing gas piping 36 connected to the gas supply piping 34 via the first valve 35 and introducing the processing gas into the gas supply piping 34", wherein the gas supply piping 34 is connected to the processing chamber 30, and the processing chamber 30 is The substrate G is treated with corrosive processing gas inside; and the second valve 41 of the flushing gas pipe 42 is opened in conjunction with the introduction of the atmosphere inside the processing chamber 30, and the flushing gas is introduced into the gas supply pipe 34. The flushing gas pipe 42 is connected to the gas supply pipe 34 via the second valve 41 on the processing chamber 30 side of the first valve 35. As a result, the processing chamber 30 can be opened to the atmosphere more safely while suppressing corrosion in the gas supply pipe 34.

另外，在上述實施形態中，係雖說明了感應耦合型之基板處理裝置作為電漿源的一例，但亦可為具備有其他電漿源的基板處理裝置。作為感應耦合電漿以外之電漿源，係例如可列舉出電容耦合型電漿(CCP)、微波激發表面波電漿(SWP)、電子迴旋共振電漿(ECP)及螺旋波激發電漿(HWP)等。 In addition, in the above-mentioned embodiment, although an inductively coupled substrate processing device is described as an example of a plasma source, a substrate processing device having other plasma sources may also be used. Plasma sources other than inductively coupled plasma include, for example, capacitively coupled plasma (CCP), microwave-induced surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave excited plasma (HWP).

本次所揭示之實施形態，係在所有方面皆為例示，吾人應瞭解該等例示並非用以限制本發明。上述之實施形態，係亦可不脫離添附之申請專利範圍及其主旨，以各種形態進行省略、置換、變更。 The embodiments disclosed this time are illustrative in all aspects, and we should understand that these illustrative embodiments are not intended to limit the present invention. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope and subject matter of the attached patent application.

1:基板處理裝置 1: Substrate processing equipment

10:本體部 10: Main body

20:控制裝置 20: Control device

30:處理腔室 30: Processing chamber

31:蓋子 31: Lid

31a:分隔壁 31a: Partition wall

32:本體 32: Body

32a:處理室 32a: Processing room

33:噴淋板 33:Spray board

33a:氣體吐出孔 33a: Gas outlet hole

34:氣體供給配管 34: Gas supply piping

35:第1閥 35: Valve No. 1

36:處理氣體配管 36: Processing gas piping

37:FRC 37:FRC

38:蓋側閥 38: Cover side valve

39:本體側閥 39: Body side valve

40:處理氣體供給部 40: Processing gas supply unit

41:第2閥 41: Valve No. 2

42:沖洗氣體配管 42: Flushing gas piping

43:凸緣 43: flange

44:沖洗治具 44: Rinse fixture

45:機械閥 45: Mechanical valve

46:閥部 46: Valve

47:檢測部 47: Testing Department

48:塊體 48: Block

49:驅動用配管 49: Driving piping

50:沖洗氣體供給配管 50: Flushing gas supply piping

51:沖洗氣體供給部 51: Flushing gas supply unit

60:天線 60: Antenna

61:匹配器 61:Matcher

62:高頻電源 62: High frequency power supply

70:載置台 70: Loading platform

71:匹配器 71:Matcher

72:高頻電源 72: High frequency power supply

73:排氣口 73: Exhaust port

74:排氣管 74: Exhaust pipe

75:APC閥 75:APC valve

76:真空泵 76: Vacuum pump

G:基板 G: Substrate

Claims (6)

一種基板處理裝置，其特徵係，具有： 處理腔室，在內部藉由腐蝕性之處理氣體來對基板施予處理； 氣體供給配管，被連接於前述處理腔室並連通至前述處理腔室之內部； 處理氣體配管，經由第1閥被連接於前述氣體供給配管，將前述處理氣體導入至前述氣體供給配管； 沖洗氣體配管，在前述第1閥之前述處理腔室側，經由第2閥被連接於前述氣體供給配管，將沖洗氣體導入至前述氣體供給配管；及 連動開放部，在前述第1閥關閉的狀態下，與對前述處理腔室之內部的大氣導入連動地打開前述第2閥。 A substrate processing device is characterized by comprising: a processing chamber, in which a corrosive processing gas is used to process a substrate; a gas supply pipe connected to the processing chamber and connected to the interior of the processing chamber; a processing gas pipe connected to the gas supply pipe via a first valve, and the processing gas is introduced into the gas supply pipe; a flushing gas pipe connected to the gas supply pipe via a second valve on the processing chamber side before the first valve, and the flushing gas is introduced into the gas supply pipe; and a linkage opening portion, which opens the second valve in linkage with the introduction of atmospheric gas into the interior of the processing chamber when the first valve is closed. 如請求項1之基板處理裝置，其中， 前述處理腔室，係被構成為藉由本體與蓋子而密閉， 前述大氣導入，係藉由使前述蓋子從前述本體脫離的方式，將大氣導入至前述處理腔室的內部。 A substrate processing device as claimed in claim 1, wherein the processing chamber is configured to be sealed by a body and a lid, and the atmosphere is introduced into the interior of the processing chamber by separating the lid from the body. 如請求項2之基板處理裝置，其中， 前述連動開放部，係基於前述蓋子從前述本體脫離的方式，打開前述第2閥。 A substrate processing device as claimed in claim 2, wherein the linked opening portion opens the second valve based on the separation of the cover from the body. 如請求項3之基板處理裝置，其中， 前述連動開放部，係藉由機械閥檢測前述蓋子從前述本體的脫離，並藉由從前述沖洗氣體配管分歧而被供給至與前述機械閥連接之驅動用配管的沖洗氣體，打開前述第2閥。 The substrate processing device as claimed in claim 3, wherein the linked opening portion detects the separation of the cover from the body by a mechanical valve, and opens the second valve by the flushing gas branched from the flushing gas pipe and supplied to the drive pipe connected to the mechanical valve. 如請求項1～4中任一項之基板處理裝置，其中， 前述沖洗氣體，係乾空氣。 A substrate processing device as claimed in any one of claims 1 to 4, wherein the flushing gas is dry air. 一種氣體供給配管之沖洗方法，係基板處理裝置中的氣體供給配管之沖洗方法，其特徵係，具有： 關閉「經由第1閥被連接於與在內部藉由腐蝕性之處理氣體來對基板施予處理的處理腔室連接之氣體供給配管，將前述處理氣體導入至前述氣體供給配管」的處理氣體配管之前述第1閥的工程；及 與對前述處理腔室之內部的大氣導入連動地打開「在前述第1閥之前述處理腔室側，經由第2閥被連接於前述氣體供給配管」的沖洗氣體配管之前述第2閥，並將沖洗氣體導入至前述氣體供給配管的工程。 A method for flushing a gas supply pipe is a method for flushing a gas supply pipe in a substrate processing device, and is characterized by: A process of closing the first valve of the processing gas pipe "connected to a processing chamber in which a substrate is processed by a corrosive processing gas through the first valve, and introducing the processing gas into the gas supply pipe"; and A process of opening the second valve of the flushing gas pipe "connected to the gas supply pipe through the second valve on the processing chamber side before the first valve" in conjunction with the introduction of the atmosphere into the processing chamber, and introducing the flushing gas into the gas supply pipe.
TW110120392A 2020-06-17 2021-06-04 Substrate processing device and flushing method of gas supply pipe TWI877375B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-104219 2020-06-17
JP2020104219A JP7378357B2 (en) 2020-06-17 2020-06-17 Purging method for substrate processing equipment and gas supply piping

Publications (2)

Publication Number Publication Date
TW202213500A TW202213500A (en) 2022-04-01
TWI877375B true TWI877375B (en) 2025-03-21

Family

ID=78942473

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110120392A TWI877375B (en) 2020-06-17 2021-06-04 Substrate processing device and flushing method of gas supply pipe

Country Status (4)

Country Link
JP (1) JP7378357B2 (en)
KR (1) KR102616693B1 (en)
CN (1) CN113808971B (en)
TW (1) TWI877375B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114574837B (en) * 2022-03-07 2023-03-21 苏州迈为科技股份有限公司 Structure and method for solving parasitic plasma in plasma processing equipment
CN115789520B (en) * 2022-11-20 2025-10-28 上海良薇机电工程有限公司 Liquid source supply device, method and semiconductor process system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073541A (en) * 2005-09-02 2007-03-22 Tokyo Electron Ltd Vacuum processing equipment
JP2007123645A (en) * 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd Decompression processing equipment
JP2017092310A (en) * 2015-11-12 2017-05-25 東京エレクトロン株式会社 Processing method in processing device using halogen-based gas
JP2019054234A (en) * 2017-09-14 2019-04-04 株式会社日立ハイテクノロジーズ Plasma processing device and method for exposure to atmosphere
US20190333742A1 (en) * 2018-04-25 2019-10-31 Tokyo Electron Limited Method for cleaning gas supply line and processing system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2849255B2 (en) * 1991-11-29 1999-01-20 東洋エンジニアリング株式会社 Exhaust system for manufacturing high performance semiconductor and control method thereof
JP2922440B2 (en) * 1994-02-21 1999-07-26 松下電器産業株式会社 How to open pneumatic equipment to atmosphere
KR200168402Y1 (en) * 1994-09-28 2000-02-01 김영환 Automatic purging apparatus for pipe line
JPH09246257A (en) * 1996-03-08 1997-09-19 Hitachi Ltd Semiconductor manufacturing apparatus and gas discharge method
KR19990004094A (en) * 1997-06-27 1999-01-15 윤종용 Piping purge device of semiconductor device manufacturing equipment and its purging method and cleaning method of manufacturing equipment using these purge device and purging method
JP4798981B2 (en) 2004-10-28 2011-10-19 東京エレクトロン株式会社 Substrate processing apparatus control method, substrate processing apparatus, and program for controlling substrate processing apparatus
JP4985183B2 (en) * 2007-07-26 2012-07-25 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
JP5065115B2 (en) * 2008-03-25 2012-10-31 日本エア・リキード株式会社 Gas supply system
US20150307989A1 (en) * 2012-03-23 2015-10-29 Picosun Oy Atomic layer deposition method and apparatuses
US11118262B2 (en) * 2018-10-11 2021-09-14 Asm Ip Holding B.V. Substrate processing apparatus having a gas-mixing manifold

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073541A (en) * 2005-09-02 2007-03-22 Tokyo Electron Ltd Vacuum processing equipment
JP2007123645A (en) * 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd Decompression processing equipment
JP2017092310A (en) * 2015-11-12 2017-05-25 東京エレクトロン株式会社 Processing method in processing device using halogen-based gas
JP2019054234A (en) * 2017-09-14 2019-04-04 株式会社日立ハイテクノロジーズ Plasma processing device and method for exposure to atmosphere
US20190333742A1 (en) * 2018-04-25 2019-10-31 Tokyo Electron Limited Method for cleaning gas supply line and processing system

Also Published As

Publication number Publication date
CN113808971A (en) 2021-12-17
JP2021197489A (en) 2021-12-27
TW202213500A (en) 2022-04-01
JP7378357B2 (en) 2023-11-13
CN113808971B (en) 2024-01-26
KR102616693B1 (en) 2023-12-20
KR20210156216A (en) 2021-12-24

Similar Documents

Publication Publication Date Title
JP5373501B2 (en) Plasma processing system
TWI685033B (en) Cleaning method of plasma processing device
TWI877375B (en) Substrate processing device and flushing method of gas supply pipe
JP2000106358A (en) Semiconductor manufacturing apparatus and semiconductor substrate processing method
WO2009084823A1 (en) Apparatus and method for processing substrate
US10553409B2 (en) Method of cleaning plasma processing apparatus
TWI725034B (en) Plasma processing method
WO2019053836A1 (en) Plasma processing device and wet cleaning method
KR20180008310A (en) Plasma etching method, plasma etching apparatus and substrate mounting table
KR102538188B1 (en) Plasma processing apparatus cleaning method
US6547934B2 (en) Reduction of metal oxide in a dual frequency etch chamber
KR20150091769A (en) Device for treating substrate
TWI445076B (en) Vacuum processing device
TWI831956B (en) Cleaning method and plasma processing apparatus
US20230130652A1 (en) Substrate treating method and chamber cleaning method
JP2010192513A (en) Plasma processing apparatus and method of operating the same
JP2009182300A (en) Vacuum processing apparatus
US20050115676A1 (en) Plasma processing method, plasma processing apparatus and computer storage medium
TW202141620A (en) Cleaning method and manufacturing method of semiconductor device
JP6839705B2 (en) Substrate processing equipment and method
KR101873804B1 (en) Apparatus and method for treating substrate
JP2001244239A (en) Semiconductor manufacturing equipment and deposit eliminating method
KR20230071622A (en) Substrate treating apparatus
JP2022012610A (en) Substrate processing method, storage medium, and substrate processing device
JPS63233533A (en) Plasma treatment apparatus