TWI882751B - Manufacturing method of surface treated copper foil, copper clad laminate and printed wiring board - Google Patents
Manufacturing method of surface treated copper foil, copper clad laminate and printed wiring board Download PDFInfo
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- TWI882751B TWI882751B TW113112315A TW113112315A TWI882751B TW I882751 B TWI882751 B TW I882751B TW 113112315 A TW113112315 A TW 113112315A TW 113112315 A TW113112315 A TW 113112315A TW I882751 B TWI882751 B TW I882751B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/16—Electroplating with layers of varying thickness
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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Abstract
本發明之表面處理銅箔1具有銅箔2及形成於銅箔2之至少一面之表面處理層3。表面處理層3含有Ni、Zn及Cr。於表面處理層3中,Zn附著量為100~500 μg/dm 2,Cr附著量為70~150 μg/dm 2,且Cr附著量相對於Ni附著量、Zn附著量及Cr附著量之合計之比率為18.0~50.0%。 The surface treated copper foil 1 of the present invention comprises a copper foil 2 and a surface treated layer 3 formed on at least one side of the copper foil 2. The surface treated layer 3 contains Ni, Zn and Cr. In the surface treated layer 3, the Zn adhesion amount is 100-500 μg/dm 2 , the Cr adhesion amount is 70-150 μg/dm 2 , and the ratio of the Cr adhesion amount to the total of the Ni adhesion amount, the Zn adhesion amount and the Cr adhesion amount is 18.0-50.0%.
Description
本發明係關於一種表面處理銅箔、覆銅積層板及印刷配線板之製造方法。The present invention relates to a method for manufacturing a surface treated copper foil, a copper clad laminate and a printed wiring board.
覆銅積層板係藉由將銅箔與由樹脂等所構成之基材貼合而製造。覆銅積層板於撓性印刷配線板等各種用途中被廣泛使用。撓性印刷配線板係對覆銅積層板之銅箔進行蝕刻而形成電路圖案(亦稱為「導體圖案」),利用焊料將電子零件連接構裝於電路圖案上,藉此進行製造。關於電路圖案,在構裝電子零件前,先自銅箔表面去除不需要之物質,或者先進行軟蝕刻以使銅箔表面粗化。Copper clad laminates are manufactured by laminating copper foil to a base material made of resin or the like. Copper clad laminates are widely used in various applications such as flexible printed wiring boards. Flexible printed wiring boards are manufactured by etching the copper foil of copper clad laminates to form a circuit pattern (also called a "conductor pattern"), and connecting and mounting electronic components on the circuit pattern using solder. Regarding the circuit pattern, before mounting electronic components, unnecessary substances are removed from the surface of the copper foil, or soft etching is performed to roughen the surface of the copper foil.
被用於覆銅積層板之銅箔之表面,所含有之元素及/或形狀受到控制,以滿足所要求之特性。 例如,專利文獻1揭示了一種表面處理銅箔作為與樹脂之密接性、耐化學品性及耐熱性優異,且不易殘留蝕刻殘渣之表面處理銅箔,上述表面處理銅箔具備銅箔及表面處理層(Zn-Ni-Mo層),該表面處理層被設置於銅箔之至少一面,且Zn附著量、Ni附著量及Mo附著量受到控制。 [先前技術文獻] [專利文獻] The surface of the copper foil used for the copper-clad laminate is controlled in elements and/or shape to meet the required characteristics. For example, Patent Document 1 discloses a surface-treated copper foil having excellent adhesion to resin, chemical resistance and heat resistance, and being less likely to leave etching residues. The surface-treated copper foil comprises a copper foil and a surface-treated layer (Zn-Ni-Mo layer), which is disposed on at least one side of the copper foil, and the amount of Zn, Ni and Mo attached is controlled. [Prior Art Document] [Patent Document]
[專利文獻1]國際公開第2019/188837號[Patent Document 1] International Publication No. 2019/188837
[發明所欲解決之課題][The problem that the invention wants to solve]
專利文獻1所記載之表面處理銅箔,有時於軟蝕刻時產生底切,電路圖案之可靠性降低(例如,基材與電路圖案之密接強度降低等)。 本發明之實施形態,係為了解決如上述之問題而完成者,其目的在於,在一態樣中提供一種能夠抑制軟蝕刻時產生底切之表面處理銅箔及覆銅積層板。 又,本發明之實施形態之目的在於,在另一態樣中,提供一種具備底切受到抑制之電路圖案的印刷配線板之製造方法。 [解決課題之技術手段] The surface treated copper foil described in Patent Document 1 sometimes produces undercuts during soft etching, which reduces the reliability of the circuit pattern (for example, the adhesion strength between the substrate and the circuit pattern is reduced). The embodiment of the present invention is completed to solve the above-mentioned problems, and its purpose is to provide a surface treated copper foil and copper clad laminate that can suppress undercuts during soft etching in one embodiment. In addition, the purpose of the embodiment of the present invention is to provide a method for manufacturing a printed wiring board having a circuit pattern with suppressed undercuts in another embodiment. [Technical means for solving the problem]
本發明人經對表面處理銅箔進行潛心研究後,結果發現藉由在銅箔之至少一面形成含有Ni、Zn及Cr之表面處理層,且將Zn附著量及Cr附著量連同Cr附著量相對於Ni附著量、Zn附著量及Cr附著量之合計之比率控制於規定範圍內,可解決上述問題,而完成了本發明之實施形態。After intensive research on surface-treated copper foil, the inventors of the present invention found that the above-mentioned problem can be solved by forming a surface-treated layer containing Ni, Zn and Cr on at least one side of the copper foil, and controlling the ratio of the Zn attachment amount and the Cr attachment amount together with the total of the Cr attachment amount to the Ni attachment amount, the Zn attachment amount and the Cr attachment amount within a specified range, thereby completing the implementation form of the present invention.
即,本發明之實施形態於一態樣中,係關於一種表面處理銅箔,其具有銅箔及形成於上述銅箔之至少一面之表面處理層, 上述表面處理層含有Ni、Zn及Cr, 於上述表面處理層中,Zn附著量為100~500 μg/dm 2,Cr附著量為70~150 μg/dm 2,且上述Cr附著量相對於Ni附著量、上述Zn附著量及上述Cr附著量之合計之比率為18.0~50.0%。 That is, an embodiment of the present invention, in one aspect, relates to a surface-treated copper foil, comprising a copper foil and a surface-treated layer formed on at least one side of the copper foil, wherein the surface-treated layer contains Ni, Zn and Cr, wherein the amount of Zn deposited in the surface-treated layer is 100 to 500 μg/dm 2 , the amount of Cr deposited is 70 to 150 μg/dm 2 , and the ratio of the amount of Cr deposited to the total amount of Ni deposited, the amount of Zn deposited and the amount of Cr deposited is 18.0 to 50.0%.
又,本發明之實施形態於另一態樣中,係關於一種覆銅積層板,其具備上述表面處理銅箔,及設置於上述表面處理銅箔之上述表面處理層上之基材。In another embodiment of the present invention, there is provided a copper-clad laminate having the surface-treated copper foil and a substrate disposed on the surface-treated layer of the surface-treated copper foil.
進而,本發明之實施形態於另一態樣中,係關於一種印刷配線板之製造方法,其係對上述覆銅積層板之上述表面處理銅箔進行蝕刻而形成電路圖案後,進行軟蝕刻。 [發明之效果] Furthermore, the present invention is implemented in another aspect in a method for manufacturing a printed wiring board, which comprises etching the surface-treated copper foil of the copper-clad laminate to form a circuit pattern and then performing soft etching. [Effect of the invention]
若根據本發明之實施形態,可於一態樣中,提供一種能夠抑制軟蝕刻時產生底切之表面處理銅箔及覆銅積層板。 又,若根據本發明之實施形態,可於另一態樣中,提供一種具備底切受到抑制之電路圖案的印刷配線板之製造方法。 According to an embodiment of the present invention, a surface treated copper foil and a copper clad laminate capable of suppressing undercutting during soft etching can be provided in one embodiment. In addition, according to an embodiment of the present invention, a method for manufacturing a printed wiring board having a circuit pattern with suppressed undercutting can be provided in another embodiment.
以下,具體地說明本發明之適宜之實施形態,但本發明不應限定於此等來進行解釋,只要不脫離本發明之主旨,可基於該行業者之知識,進行各種變更、改良等。以下實施形態所揭示之複數個構成要素,可藉由適當之組合而形成各種發明。例如,可自以下實施形態所示之全部構成要素中刪除若干構成要素,亦可適當地組合不同之實施形態之構成要素。The following specifically describes the appropriate implementation forms of the present invention, but the present invention should not be limited to these. As long as it does not deviate from the main purpose of the present invention, various changes and improvements can be made based on the knowledge of the industry. The multiple components disclosed in the following implementation forms can form various inventions through appropriate combinations. For example, some components can be deleted from all the components shown in the following implementation forms, and the components of different implementation forms can also be appropriately combined.
本發明之實施形態之表面處理銅箔具有銅箔及形成於銅箔之至少一面之表面處理層,表面處理層含有Ni、Zn及Cr,於表面處理層中,Zn附著量為100~500 μg/dm 2,Cr附著量為70~150 μg/dm 2,且Cr附著量相對於Ni附著量、Zn附著量及Cr附著量之合計之比率為18.0~50.0%。本發明之實施形態之表面處理銅箔藉由設為此種構成,可抑制軟蝕刻時產生底切。 The surface treated copper foil of the embodiment of the present invention comprises a copper foil and a surface treated layer formed on at least one side of the copper foil, wherein the surface treated layer contains Ni, Zn and Cr, wherein the amount of Zn deposited in the surface treated layer is 100 to 500 μg/dm 2 , the amount of Cr deposited is 70 to 150 μg/dm 2 , and the ratio of the amount of Cr deposited to the total amount of Ni deposited, the amount of Zn deposited and the amount of Cr deposited is 18.0 to 50.0%. The surface treated copper foil of the embodiment of the present invention can suppress undercutting during soft etching by being configured in this way.
又,本發明之實施形態之覆銅積層板具備上述表面處理銅箔,及設置於上述表面處理銅箔之表面處理層上之基材。本發明之實施形態之覆銅積層板藉由設為此種構成,可於對表面處理銅箔進行蝕刻而形成電路圖案後,在進行軟蝕刻時,抑制產生底切。Furthermore, the copper-clad laminate of the embodiment of the present invention comprises the surface-treated copper foil and a substrate disposed on the surface-treated layer of the surface-treated copper foil. The copper-clad laminate of the embodiment of the present invention is configured in this way to suppress undercutting during soft etching after etching the surface-treated copper foil to form a circuit pattern.
圖1係表示具備本發明之實施形態之表面處理銅箔的覆銅積層板之一例的剖面圖。 如圖1所示,表面處理銅箔1具有銅箔2及形成於銅箔2之至少一面之表面處理層3。又,覆銅積層板10具備表面處理銅箔1,及設置於表面處理銅箔1之表面處理層3上之基材11。 FIG1 is a cross-sectional view showing an example of a copper-clad laminate having a surface-treated copper foil in an embodiment of the present invention. As shown in FIG1 , the surface-treated copper foil 1 has a copper foil 2 and a surface-treated layer 3 formed on at least one side of the copper foil 2. In addition, the copper-clad laminate 10 has a surface-treated copper foil 1 and a substrate 11 disposed on the surface-treated layer 3 of the surface-treated copper foil 1.
圖2係表示對具備本發明之實施形態之表面處理銅箔的覆銅積層板之表面處理銅箔進行蝕刻而形成電路圖案後,經進行軟蝕刻之狀態之一例的剖面圖。 如圖2所示,使用具備本發明之實施形態之表面處理銅箔的覆銅積層板所形成之電路圖案20中,與基材11相接之表面處理層3相較於銅箔2,並未被過度侵蝕去除,而可抑制產生底切。 FIG. 2 is a cross-sectional view showing an example of a state in which a circuit pattern is formed by etching the surface-treated copper foil of a copper-clad laminate having a surface-treated copper foil in an embodiment of the present invention and then soft-etching. As shown in FIG. 2, in the circuit pattern 20 formed using the copper-clad laminate having a surface-treated copper foil in an embodiment of the present invention, the surface-treated layer 3 in contact with the substrate 11 is not excessively etched and removed compared to the copper foil 2, and the generation of undercut can be suppressed.
圖3係表示對具備以往之表面處理銅箔之覆銅積層板的表面處理銅箔進行蝕刻而形成電路圖案後,經進行軟蝕刻之狀態之一例的剖面圖。 如圖3所示,使用具備以往之表面處理銅箔之覆銅積層板所形成之電路圖案30中,與基材11相接之表面處理層4相較於銅箔2,被過度侵蝕去除,而容易產生底切40。 FIG3 is a cross-sectional view showing an example of a state in which a circuit pattern is formed by etching the surface treated copper foil of a copper-clad laminate having a conventional surface treated copper foil and then soft etching is performed. As shown in FIG3, in the circuit pattern 30 formed using the copper-clad laminate having a conventional surface treated copper foil, the surface treated layer 4 in contact with the substrate 11 is excessively etched and removed compared to the copper foil 2, and undercut 40 is easily generated.
被用於表面處理銅箔1之表面處理層3可僅形成於銅箔2之一面,亦可形成於銅箔2之兩面。當於銅箔2之兩面形成表面處理層3之情形時,表面處理層3之種類可相同亦可不同。The surface treatment layer 3 used for surface treatment of the copper foil 1 may be formed on only one side of the copper foil 2 or on both sides of the copper foil 2. When the surface treatment layer 3 is formed on both sides of the copper foil 2, the types of the surface treatment layer 3 may be the same or different.
表面處理層3含有Ni、Zn及Cr。又,表面處理層3可進而含有Co,亦可不含Co。 表面處理層3所含之各種元素中,為了抑制軟蝕刻時產生底切,重要的是將Zn附著量控制為100~500 μg/dm 2,將Cr附著量控制為70~150 μg/dm 2,且將Cr附著量相對於Ni附著量、Zn附著量及Cr附著量之合計之比率(以下,略稱為「Cr率」)控制為18.0~50.0%。又,藉由將Zn附著量控制於此範圍,可對表面處理層3賦予耐熱性、耐化學品性等特性;又,藉由將Cr附著量控制於此範圍,亦可賦予防銹效果。就穩定地確保抑制軟蝕刻時產生底切之效果等之觀點,Zn附著量較佳為151~394 μg/dm 2,更佳為151~331 μg/dm 2。又,就同樣觀點,Cr附著量較佳為98~120 μg/dm 2,更佳為98~107 μg/dm 2。進而,就同樣觀點,Cr率較佳為20.0~40.0%,更佳為20.5~35.5%。 The surface treatment layer 3 contains Ni, Zn and Cr. In addition, the surface treatment layer 3 may further contain Co or may not contain Co. Among the various elements contained in the surface treatment layer 3, in order to suppress undercutting during soft etching, it is important to control the Zn attachment amount to 100-500 μg/dm 2 , the Cr attachment amount to 70-150 μg/dm 2 , and the ratio of the Cr attachment amount to the total of the Ni attachment amount, the Zn attachment amount and the Cr attachment amount (hereinafter referred to as "Cr ratio") to 18.0-50.0%. In addition, by controlling the Zn attachment amount within this range, the surface treatment layer 3 can be given characteristics such as heat resistance and chemical resistance; and by controlling the Cr attachment amount within this range, a rust-proof effect can also be given. From the viewpoint of stably ensuring the effect of suppressing undercut during soft etching, the Zn deposition amount is preferably 151 to 394 μg/dm 2 , more preferably 151 to 331 μg/dm 2 . From the same viewpoint, the Cr deposition amount is preferably 98 to 120 μg/dm 2 , more preferably 98 to 107 μg/dm 2 . From the same viewpoint, the Cr ratio is preferably 20.0 to 40.0%, more preferably 20.5 to 35.5%.
表面處理層3中之Ni附著量並無特別限定,較佳為10~100 μm/dm 2,更佳為27~72 μm/dm 2。藉由將Ni附著量控制於此種範圍,可提高抑制軟蝕刻時產生底切之效果。 The Ni deposition amount in the surface treatment layer 3 is not particularly limited, but is preferably 10 to 100 μm/dm 2 , and more preferably 27 to 72 μm/dm 2 . By controlling the Ni deposition amount within such a range, the effect of suppressing undercut during soft etching can be enhanced.
Ni係難以溶解於被用於軟蝕刻之軟蝕刻液之成分,相對於此,Zn則是容易溶解之成分。因此,藉由將表面處理層3中之Ni及Zn之附著量的平衡控制於適當範圍,可提高抑制軟蝕刻時產生底切之效果。就獲得此效果之觀點,於表面處理層3中,Ni附著量相對於Ni附著量及Zn附著量之合計之比率較佳為10.0~20.0%,更佳為15.2~18.2%。又,就同樣觀點,於表面處理層3中,Ni附著量及Zn附著量之合計較佳為100 μg/dm 2以上且未達500 μg/dm 2,更佳為178~466 μg/dm 2。 此處,作為被用於軟蝕刻之軟蝕刻液,並無特別限定,可使用該技術領域中公知者。典型之軟蝕刻液係以過氧化氫及硫酸作為主成分。 Ni is a component that is difficult to dissolve in the soft etching solution used for soft etching, while Zn is a component that is easily soluble. Therefore, by controlling the balance of the Ni and Zn attachment amounts in the surface treatment layer 3 within an appropriate range, the effect of suppressing undercutting during soft etching can be improved. From the viewpoint of obtaining this effect, in the surface treatment layer 3, the ratio of the Ni attachment amount to the total of the Ni attachment amount and the Zn attachment amount is preferably 10.0 to 20.0%, and more preferably 15.2 to 18.2%. In addition, from the same viewpoint, in the surface treatment layer 3, the total of the Ni attachment amount and the Zn attachment amount is preferably 100 μg/dm 2 or more and less than 500 μg/dm 2 , and more preferably 178 to 466 μg/dm 2 . Here, the soft etching solution used for soft etching is not particularly limited, and any known soft etching solution in the technical field can be used. A typical soft etching solution contains hydrogen peroxide and sulfuric acid as main components.
於表面處理層3含有Co之情形時,表面處理層3中之Co附著量較佳為100 μg/dm 2以下,更佳為80 μg/dm 2以下。藉由將Co附著量控制於該範圍,可確保抑制軟蝕刻時產生底切之效果。又,由於Co為磁性金屬,故藉由將Co附著量控制於該範圍,可獲得能夠製作高頻特性優異之印刷配線板之表面處理銅箔1。再者,Co附著量之下限並無特別限定,典型而言為0.1 μg/dm 2,較佳為0.5 μg/dm 2。 When the surface treatment layer 3 contains Co, the amount of Co deposited in the surface treatment layer 3 is preferably 100 μg/dm 2 or less, and more preferably 80 μg/dm 2 or less. By controlling the amount of Co deposited within this range, the effect of suppressing undercutting during soft etching can be ensured. In addition, since Co is a magnetic metal, by controlling the amount of Co deposited within this range, a surface-treated copper foil 1 capable of manufacturing a printed wiring board with excellent high-frequency characteristics can be obtained. In addition, the lower limit of the amount of Co deposited is not particularly limited, and is typically 0.1 μg/dm 2 , and preferably 0.5 μg/dm 2 .
表面處理層3中之Zn附著量、Ni附著量及Co附著量(當存在時)可用按照硝酸:水=1:2之體積比混合而成之硝酸水溶液使所獲得之表面處理銅箔1溶解,藉由ICP分析進行測定。測定可使用感應耦合電漿發射光譜分析裝置(日立高新技術科學股份有限公司製造,SPS3520UV)或與其同等之裝置。 表面處理層3中之Cr附著量可藉由以下方式進行測定,亦即用按照鹽酸:水=1:4之體積比混合而成之鹽酸水溶液將所獲得之表面處理銅箔1煮沸溶解,利用原子吸光法進行定量分析。測定可使用原子吸光分光光度計(Agilent製造,200 Series AA)或與其同等之裝置。 The amount of Zn, Ni and Co (when present) in the surface treatment layer 3 can be measured by dissolving the surface treated copper foil 1 in a nitric acid aqueous solution mixed in a volume ratio of nitric acid: water = 1:2, and then measuring it by ICP analysis. The measurement can be performed using an inductively coupled plasma emission spectrometer (SPS3520UV manufactured by Hitachi High-Tech Sciences, Inc.) or an equivalent device. The amount of Cr in the surface treatment layer 3 can be measured by boiling and dissolving the surface treated copper foil 1 in a hydrochloric acid aqueous solution mixed in a volume ratio of hydrochloric acid: water = 1:4, and then quantitatively analyzing it using an atomic absorption method. The measurement can be performed using an atomic absorption spectrophotometer (200 Series AA manufactured by Agilent) or an equivalent device.
關於表面處理層3之種類,若表面處理層3中之規定元素之附著量如上述地受到控制,則並無特別限定,可使用該技術領域中藉由公知之各種表面處理所形成之層。 作為表面處理層3之例,可舉粗化處理層、耐化學品處理層、耐熱處理層、鉻酸鹽處理層、矽烷偶合處理層等。此等層可單獨使用,或組合兩種以上而使用。於該等層中,為了提升與基材11(尤其是樹脂基材)之接著性,表面處理層3較佳含有粗化處理層。 此處,於本說明書中,所謂「粗化處理層」係指藉由粗化處理所形成之層,係含有粗化粒子之層。又,於粗化處理,有時會進行通常之鍍銅作為預處理等,或者為了防止粗化粒子之脫落而會進行通常之鍍銅等作為精加工處理,但本說明書中之「粗化處理層」包括藉由此等預處理及精加工處理所形成之層。 Regarding the type of surface treatment layer 3, if the amount of the specified element in the surface treatment layer 3 is controlled as described above, there is no particular limitation, and a layer formed by various surface treatments known in the art can be used. Examples of the surface treatment layer 3 include a roughening treatment layer, a chemical resistance treatment layer, a heat resistance treatment layer, a chromate treatment layer, a silane coupling treatment layer, etc. These layers can be used alone or in combination of two or more. Among these layers, in order to improve the adhesion with the substrate 11 (especially the resin substrate), the surface treatment layer 3 preferably contains a roughening treatment layer. Here, in this manual, the so-called "roughening treatment layer" refers to a layer formed by roughening treatment, which is a layer containing roughening particles. In addition, in the roughening treatment, conventional copper plating is sometimes performed as a pre-treatment, or conventional copper plating is performed as a finishing treatment to prevent the roughening particles from falling off, but the "roughening treatment layer" in this manual includes the layer formed by such pre-treatment and finishing treatment.
當表面處理層3含有選自由耐化學品處理層、耐熱處理層、鉻酸鹽處理層及矽烷偶合處理層所組成之群中一種以上之層的情形時,此等層較佳設置於粗化處理層上。When the surface treatment layer 3 includes one or more layers selected from the group consisting of a chemical resistance treatment layer, a heat resistance treatment layer, a chromate treatment layer, and a silane coupling treatment layer, these layers are preferably provided on the roughening treatment layer.
作為粗化粒子,並無特別限定,可由選自由銅、鎳、鈷、磷、鎢、砷、鉬、鉻及鋅所組成之群中之任一種單質或包含任一種以上之合金形成。 粗化粒子可含有1次粗化粒子及2次粗化粒子。2次粗化粒子較佳具有與1次粗化粒子不同之化學組成。 1次粗化粒子例如可由銅或銅合金所形成,尤其是銅。 2次粗化粒子例如可由含有銅、鈷及鎳之合金所形成。 可於1次粗化粒子之表面之至少一部分形成覆蓋鍍層。作為覆蓋鍍層,並無特別限定,可由銅、銀、金、鎳、鈷、鋅等所形成。此等之中,覆蓋鍍層較佳由銅所形成。 The roughening particles are not particularly limited and may be formed of any single substance selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium and zinc, or an alloy containing any one or more of them. The roughening particles may contain primary roughening particles and secondary roughening particles. The secondary roughening particles preferably have a chemical composition different from that of the primary roughening particles. The primary roughening particles may be formed of copper or a copper alloy, especially copper. The secondary roughening particles may be formed of an alloy containing copper, cobalt and nickel, for example. A coating layer may be formed on at least a portion of the surface of the primary roughening particles. The coating layer is not particularly limited and may be formed of copper, silver, gold, nickel, cobalt, zinc, etc. Among these, the covering layer is preferably formed of copper.
粗化處理層例如可藉由以下方式形成,亦即,於進行用以形成1次粗化粒子之1次粗化處理後,進行用以形成覆蓋鍍層之覆蓋鍍覆,繼而進行用以形成2次粗化粒子之2次粗化處理。藉由用此種方法進行粗化處理,而易於形成具有如上述之特徵之表面處理層3。The roughening treatment layer can be formed, for example, by performing a primary roughening treatment to form primary roughening particles, performing a cover plating to form a cover plating layer, and then performing a secondary roughening treatment to form secondary roughening particles. By performing the roughening treatment in this way, it is easy to form a surface treatment layer 3 having the above-mentioned characteristics.
粗化粒子層可藉由電鍍而形成。粗化處理等條件並無特別限定,典型之條件如下。又,電鍍可為1次,亦可分複數次進行。 (粗化處理之條件) 鍍覆液組成:5~15 g/L之Cu、40~100 g/L之硫酸、1~6 ppm之鎢(源自鎢酸鈉二水合物) 鍍覆液溫度:20~50℃ 電鍍條件:電流密度30~90 A/dm 2,時間0.1~8秒 (覆蓋鍍覆之條件) 鍍覆液組成:10~30 g/L之Cu、70~130 g/L之硫酸 鍍覆液溫度:30~60℃ 電鍍條件:電流密度4.8~15 A/dm 2,時間0.1~8秒 The roughened particle layer can be formed by electroplating. The conditions of the roughening treatment are not particularly limited, but typical conditions are as follows. Electroplating can be performed once or multiple times. (Conditions for roughening treatment) Plating solution composition: 5-15 g/L Cu, 40-100 g/L sulfuric acid, 1-6 ppm tungsten (from sodium tungstate dihydrate) Plating solution temperature: 20-50°C Electroplating conditions: current density 30-90 A/dm 2 , time 0.1-8 seconds (Conditions for covering coating) Plating solution composition: 10-30 g/L Cu, 70-130 g/L sulfuric acid Plating solution temperature: 30-60°C Electroplating conditions: current density 4.8-15 A/dm 2 , time 0.1-8 seconds
作為耐化學品處理層及耐熱處理層,並無特別限定,可由該技術領域中公知之材料所形成。耐化學品處理層有時亦會作為耐熱處理層發揮作用,因此可形成具有耐化學品處理層及耐熱處理層兩者之功能之一個層作為耐化學品處理層及耐熱處理層。 作為耐化學品處理層及/或耐熱處理層,可形成為含有選自由鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵及鉭所組成之群中一種以上之元素(可為金屬、合金、氧化物、氮化物、硫化物等中之任一形態)之層。此等之中,耐化學品處理層及耐熱處理層較佳為Ni-Zn層。 There is no particular limitation on the chemical-resistant layer and the heat-resistant layer, and the layer can be formed of materials known in the art. The chemical-resistant layer sometimes also functions as a heat-resistant layer, so a layer having the functions of both the chemical-resistant layer and the heat-resistant layer can be formed as the chemical-resistant layer and the heat-resistant layer. As a chemical treatment resistant layer and/or heat treatment resistant layer, a layer containing one or more elements selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron and tantalum (can be any form of metal, alloy, oxide, nitride, sulfide, etc.) can be formed. Among these, the chemical treatment resistant layer and the heat treatment resistant layer are preferably Ni-Zn layers.
耐化學品處理層及耐熱處理層可藉由電鍍而形成。電鍍之條件並無特別限定。使用一般之電鍍裝置進行之耐化學品處理及耐熱處理之典型條件如下。再者,各電鍍可為1次,亦可分複數次進行。 (耐化學品處理及耐熱處理:Ni-Zn層之形成條件) 鍍覆液組成:1~30 g/L之Ni、1~30 g/L之Zn 鍍覆液pH:2~5 鍍覆液溫度:30~50℃ 電鍍條件:電流密度0.1~10 A/dm 2,時間0.1~5秒 The chemical-resistant layer and the heat-resistant layer can be formed by electroplating. The conditions of electroplating are not particularly limited. The typical conditions of chemical-resistant and heat-resistant treatments using general electroplating equipment are as follows. Furthermore, each electroplating can be performed once or in multiple times. (Chemical-resistant and heat-resistant treatments: conditions for forming Ni-Zn layer) Coating liquid composition: 1-30 g/L Ni, 1-30 g/L Zn Coating liquid pH: 2-5 Coating liquid temperature: 30-50°C Electroplating conditions: current density 0.1-10 A/dm 2 , time 0.1-5 seconds
作為鉻酸鹽處理層,並無特別限定,可由該技術領域中公知之材料所形成。 於本說明書中,所謂「鉻酸鹽處理層」意指由含有鉻酸酐、鉻酸、重鉻酸、鉻酸鹽或重鉻酸鹽之液體所形成之層。鉻酸鹽處理層可形成為含有選自由鈷、鐵、鎳、鉬、鋅、鉭、銅、鋁、磷、鎢、錫、砷及鈦所組成之群中一種以上之元素(可為金屬、合金、氧化物、氮化物、硫化物等中之任一形態)之層。作為鉻酸鹽處理層之例,可舉經鉻酸酐或重鉻酸鉀水溶液處理之鉻酸鹽處理層、經含有鉻酸酐或重鉻酸鉀及鋅之處理液處理之鉻酸鹽處理層等。 The chromate treatment layer is not particularly limited and can be formed by materials known in the art. In this specification, the so-called "chromate treatment layer" means a layer formed by a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate or dichromate. The chromate treatment layer can be formed as a layer containing one or more elements selected from the group consisting of cobalt, iron, nickel, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic and titanium (can be any form of metal, alloy, oxide, nitride, sulfide, etc.). Examples of the chromate-treated layer include a chromate-treated layer treated with an aqueous solution of chromic anhydride or potassium dichromate, a chromate-treated layer treated with a treatment solution containing chromic anhydride or potassium dichromate and zinc, etc.
鉻酸鹽處理層可藉由浸漬鉻酸鹽處理、電解鉻酸鹽處理等公知方法而形成。鉻酸鹽處理之條件並無特別限定。一般之鉻酸鹽處理之典型條件如下。再者,鉻酸鹽處理可為1次,亦可分複數次進行。 鉻酸鹽液組成:1~10 g/L之K 2Cr 2O 7、0.01~10 g/L之Zn 鉻酸鹽液pH:2~5 鉻酸鹽液溫度:30~55℃ 電解條件:電流密度0.1~10 A/dm 2,時間0.1~5秒(於電解鉻酸鹽處理之情形時) The chromate treatment layer can be formed by known methods such as immersion chromate treatment and electrolytic chromate treatment. The conditions of the chromate treatment are not particularly limited. The typical conditions of general chromate treatment are as follows. Furthermore, the chromate treatment can be performed once or multiple times. Composition of chromate solution: 1-10 g/L K 2 Cr 2 O 7 , 0.01-10 g/L Zn Chromate solution pH: 2-5 Chromate solution temperature: 30-55°C Electrolysis conditions: current density 0.1-10 A/dm 2 , time 0.1-5 seconds (in the case of electrolytic chromate treatment)
作為矽烷偶合處理層,並無特別限定,可由該技術領域中公知之材料所形成。 於本說明書中,所謂「矽烷偶合處理層」意指由矽烷偶合劑所形成之層。 作為矽烷偶合劑,並無特別限定,可使用該技術領域中公知者。作為矽烷偶合劑之例,可舉胺基系矽烷偶合劑、環氧系矽烷偶合劑、巰基系矽烷偶合劑、甲基丙烯醯氧基系矽烷偶合劑、乙烯基系矽烷偶合劑、咪唑系矽烷偶合劑、三系矽烷偶合劑等。其中,較佳為胺基系矽烷偶合劑、環氧系矽烷偶合劑。矽烷偶合劑可單獨使用,亦可組合兩種以上而使用。 作為典型之矽烷偶合處理層之形成方法,可舉以下方法,亦即藉由塗佈上述矽烷偶合劑之1~3體積%水溶液,並使之乾燥,而形成矽烷偶合處理層。 The silane coupling treatment layer is not particularly limited, and can be formed of materials known in the art. In this specification, the so-called "silane coupling treatment layer" means a layer formed by a silane coupling agent. The silane coupling agent is not particularly limited, and those known in the art can be used. Examples of silane coupling agents include amino silane coupling agents, epoxy silane coupling agents, butyl silane coupling agents, methacryloyl silane coupling agents, vinyl silane coupling agents, imidazole silane coupling agents, tris silane coupling agents, and the like. Silane coupling agents, etc. Among them, amino-based silane coupling agents and epoxy-based silane coupling agents are preferred. Silane coupling agents can be used alone or in combination of two or more. As a typical method for forming a silane coupling treatment layer, the following method can be cited, that is, by applying a 1-3 volume % aqueous solution of the above-mentioned silane coupling agent and drying it to form a silane coupling treatment layer.
作為被用於表面處理銅箔1之銅箔2,並無特別限定,可為電解銅箔或壓延銅箔之任一種。 電解銅箔,例如可藉由自硫酸銅鍍浴將銅電解沉積至由鈦或不鏽鋼所形成之滾筒上而製造。電解銅箔具有形成於滾筒側之平坦之S面(光澤面)及形成於S面之相反側之M面(無光面)。 The copper foil 2 used for the surface-treated copper foil 1 is not particularly limited and may be either an electrolytic copper foil or a rolled copper foil. The electrolytic copper foil can be produced, for example, by electrolytically depositing copper from a copper sulfate bath onto a drum formed of titanium or stainless steel. The electrolytic copper foil has a flat S surface (glossy surface) formed on the drum side and an M surface (matte surface) formed on the opposite side of the S surface.
作為銅箔2之材料,並無特別限定。於銅箔2為壓延銅箔之情形時,可使用通常被用作印刷配線板之電路圖案的精銅(JIS H3100 合金號碼C1100)、無氧銅(JIS H3100 合金號碼C1020或JIS H3510 合金號碼C1011)等高純度銅。又,亦可使用銅合金,例如摻錫銅、摻銀銅、添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜系銅合金。於本說明書中,所謂「銅箔2」係指亦包括銅合金箔在內之概念。The material of the copper foil 2 is not particularly limited. When the copper foil 2 is a rolled copper foil, high-purity copper such as refined copper (JIS H3100 alloy number C1100) or oxygen-free copper (JIS H3100 alloy number C1020 or JIS H3510 alloy number C1011) which is generally used as a circuit pattern of a printed wiring board can be used. In addition, copper alloys such as tin-doped copper, silver-doped copper, copper alloys added with Cr, Zr or Mg, and Carsonite copper alloys added with Ni and Si can also be used. In this specification, the so-called "copper foil 2" refers to a concept that also includes copper alloy foil.
銅箔2之厚度並無特別限定,例如可設為1~1000 μm、1~500 μm、1~300 μm、3~100 μm、5~70 μm、6~35 μm或9~18 μm。The thickness of the copper foil 2 is not particularly limited, and may be, for example, 1 to 1000 μm, 1 to 500 μm, 1 to 300 μm, 3 to 100 μm, 5 to 70 μm, 6 to 35 μm, or 9 to 18 μm.
由如上述之銅箔2及表面處理層3所構成之表面處理銅箔1,可依該技術領域中公知之方法而製造。此處,表面處理層3中之Ni附著量、Zn附著量、Cr附著量及Co附著量(當存在時)可藉由調整表面處理層3之形成條件來控制。該形成條件,例如可舉電流值之大小、表面處理時間、浴中之各金屬離子濃度、浴之溫度或pH等。The surface treated copper foil 1 composed of the copper foil 2 and the surface treated layer 3 as described above can be manufactured according to a method known in the art. Here, the amount of Ni, Zn, Cr and Co (when present) in the surface treated layer 3 can be controlled by adjusting the formation conditions of the surface treated layer 3. The formation conditions include, for example, the current value, the surface treatment time, the concentration of each metal ion in the bath, the temperature or pH of the bath, etc.
本發明之實施形態之覆銅積層板10,如上述,具備表面處理銅箔1,及設置於表面處理銅箔1之表面處理層3上之基材11。 此覆銅積層板10可藉由將基材11接著於表面處理銅箔1之表面處理層3而製造。 作為基材11,並無特別限定,可使用該技術領域中公知者,較佳為樹脂基材。作為樹脂基材之例,可舉由如下樹脂所構成之基材,亦即紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂、玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺樹脂、液晶聚合物、氟樹脂等。此等之中,樹脂基材較佳為由聚醯亞胺樹脂所構成之基材。 The copper-clad laminate 10 of the embodiment of the present invention, as described above, has a surface-treated copper foil 1 and a substrate 11 disposed on the surface-treated layer 3 of the surface-treated copper foil 1. This copper-clad laminate 10 can be manufactured by connecting the substrate 11 to the surface-treated layer 3 of the surface-treated copper foil 1. The substrate 11 is not particularly limited, and those known in the art can be used, preferably a resin substrate. Examples of resin substrates include substrates composed of the following resins, namely, paper-based phenolic resins, paper-based epoxy resins, synthetic fiber cloth-based epoxy resins, glass cloth-paper composite-based epoxy resins, glass cloth-glass non-woven cloth composite-based epoxy resins, glass cloth-based epoxy resins, polyester films, polyimide resins, liquid crystal polymers, fluororesins, etc. Among these, the resin substrate is preferably a substrate composed of polyimide resins.
作為表面處理銅箔1與基材11之接著方法,並無特別限定,可依該技術領域中公知之方法進行。例如,可將表面處理銅箔1與基材11積層並進行熱壓接。 以此方式製造之覆銅積層板10能用於製造印刷配線板。 The method for bonding the surface-treated copper foil 1 and the substrate 11 is not particularly limited and can be performed according to a method known in the art. For example, the surface-treated copper foil 1 and the substrate 11 can be laminated and heat-pressed. The copper-clad laminate 10 manufactured in this way can be used to manufacture a printed wiring board.
本發明之實施形態之覆銅積層板10使用了上述表面處理銅箔1,因此可於對表面處理銅箔1進行蝕刻而形成電路圖案20後,於進行軟蝕刻時抑制產生底切。The copper-clad laminate 10 of the embodiment of the present invention uses the surface-treated copper foil 1, so after the surface-treated copper foil 1 is etched to form the circuit pattern 20, undercutting can be suppressed during soft etching.
本發明實施形態之印刷配線板之製造方法,係藉由如下方式而進行,亦即對上述覆銅積層板10之表面處理銅箔1進行蝕刻而形成電路圖案20後,進行軟蝕刻。作為電路圖案20之形成方法,並無特別限定,可使用減成法、半加成法等公知方法。其中,電路圖案20之形成方法較佳為減成法。The manufacturing method of the printed wiring board of the embodiment of the present invention is carried out in the following manner, that is, after etching the surface treated copper foil 1 of the copper clad laminate 10 to form the circuit pattern 20, soft etching is performed. The method for forming the circuit pattern 20 is not particularly limited, and known methods such as subtractive method and semi-additive method can be used. Among them, the method for forming the circuit pattern 20 is preferably the subtractive method.
於藉由減成法來製造印刷配線板之情形時,較佳以下述方式進行。首先,藉由將阻劑塗佈於覆銅積層板10之表面處理銅箔1之表面,並進行曝光及顯影,而形成規定之阻劑圖案。繼而,藉由蝕刻將未形成阻劑圖案之部分(即無用部)之表面處理銅箔1去除,而形成電路圖案20。最後,將表面處理銅箔1上之阻劑圖案去除,進行軟蝕刻。 再者,該減成法中之各種條件並無特別限定,可根據該技術領域中公知之條件而進行。 When a printed wiring board is manufactured by a subtractive method, it is preferably carried out in the following manner. First, a resist is applied to the surface of the surface-treated copper foil 1 of the copper-clad laminate 10, and then exposed and developed to form a prescribed resist pattern. Then, the surface-treated copper foil 1 where the resist pattern is not formed (i.e., the useless part) is removed by etching to form a circuit pattern 20. Finally, the resist pattern on the surface-treated copper foil 1 is removed and soft etching is performed. Furthermore, the various conditions in the subtractive method are not particularly limited and can be performed according to the conditions known in the technical field.
本發明實施形態之印刷配線板之製造方法使用了上述覆銅積層板10,因此可形成底切受到抑制之電路圖案20,電路圖案20之可靠性(例如,基材11與電路圖案20之密接強度)尤其良好。 [實施例] The manufacturing method of the printed wiring board of the embodiment of the present invention uses the above-mentioned copper-clad multilayer board 10, so that the circuit pattern 20 with suppressed undercut can be formed, and the reliability of the circuit pattern 20 (for example, the close contact strength between the substrate 11 and the circuit pattern 20) is particularly good. [Example]
以下,藉由實施例來更具體地說明本發明之實施形態,但本發明不受此等實施例任何限定。Hereinafter, the embodiments of the present invention will be described in more detail, but the present invention is not limited to these embodiments.
(實施例1) 準備厚度12 μm之壓延銅箔(JX金屬股份有限公司製造之HG箔)。對該銅箔之表面進行脫脂及酸洗後,於一面依序形成粗化處理層、耐熱及耐化學品處理層(Ni-Zn層)、鉻酸鹽處理層及矽烷偶合處理層作為表面處理層,藉此獲得表面處理銅箔。各處理層之形成條件設定如下。 (Example 1) Prepare a rolled copper foil (HG foil manufactured by JX Metal Co., Ltd.) with a thickness of 12 μm. After degreasing and pickling the surface of the copper foil, a roughening treatment layer, a heat-resistant and chemical-resistant treatment layer (Ni-Zn layer), a chromate treatment layer and a silane coupling treatment layer are sequentially formed on one side as surface treatment layers to obtain a surface-treated copper foil. The formation conditions of each treatment layer are set as follows.
(1)粗化處理層 <粗化粒子之形成條件> 鍍覆液組成:12 g/L之Cu、50 g/L之硫酸、5 ppm之鎢(源自鎢酸鈉二水合物) 鍍覆液溫度:27℃ 鍍覆處理次數:2次 電鍍條件:電流密度49.8 A/dm 2,時間0.81秒 <覆蓋鍍層之形成條件> 鍍覆液組成:20 g/L之Cu、100 g/L之硫酸 鍍覆液溫度:50℃ 鍍覆處理次數:2次 電鍍條件:電流密度11.9 A/dm 2,時間1.15秒 (1) Roughening treatment layer <Conditions for forming roughening particles> Coating solution composition: 12 g/L Cu, 50 g/L sulfuric acid, 5 ppm tungsten (from sodium tungstate dihydrate) Coating solution temperature: 27°C Number of coating treatments: 2 times Electroplating conditions: current density 49.8 A/dm 2 , time 0.81 seconds <Conditions for forming covering coating> Coating solution composition: 20 g/L Cu, 100 g/L sulfuric acid Coating solution temperature: 50°C Number of coating treatments: 2 times Electroplating conditions: current density 11.9 A/dm 2 , time 1.15 seconds
(2)耐熱及耐化學品處理層 <Ni-Zn層之形成條件> 鍍覆液組成:23.5 g/L之Ni、4.5 g/L之Zn 鍍覆液pH:3.6 鍍覆液溫度:40℃ 電鍍條件:電流密度0.70 A/dm 2,時間0.59秒 鍍覆處理次數:1次 (2) Heat-resistant and chemical-resistant layer <Conditions for forming the Ni-Zn layer> Coating solution composition: 23.5 g/L Ni, 4.5 g/L Zn Coating solution pH: 3.6 Coating solution temperature: 40°C Electroplating conditions: Current density 0.70 A/dm 2 , time 0.59 seconds Number of plating treatments: 1
(3)鉻酸鹽處理層 <電解鉻酸鹽處理層之形成條件> 鉻酸鹽液組成:3 g/L之K 2Cr 2O 7、0.33 g/L之Zn 鉻酸鹽液pH:3.65 鉻酸鹽液溫度:55℃ 電解條件:電流密度1.9 A/dm 2,時間0.59秒 鉻酸鹽處理次數:2次 (3) Chromate treatment layer <Conditions for forming the electrolytic chromate treatment layer> Chromate solution composition: 3 g/L K 2 Cr 2 O 7 , 0.33 g/L Zn Chromate solution pH: 3.65 Chromate solution temperature: 55°C Electrolysis conditions: Current density 1.9 A/dm 2 , time 0.59 seconds Chromate treatment times: 2 times
(4)矽烷偶合處理層 藉由塗佈N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷之1.2體積%水溶液,並使之乾燥,而形成矽烷偶合處理層。 (4) Silane coupling treatment layer The silane coupling treatment layer is formed by applying a 1.2 volume % aqueous solution of N-2-(aminoethyl)-3-aminopropyltrimethoxysilane and drying it.
(實施例2) 於耐熱及耐化學品處理層(Ni-Zn層)之形成條件中,將電鍍條件變更為電流密度1.5 A/dm 2,時間0.59秒,除此以外,在與實施例1同樣之條件下獲得表面處理銅箔。 (Example 2) A surface-treated copper foil was obtained under the same conditions as in Example 1 except that the electroplating conditions were changed to a current density of 1.5 A/dm 2 and a time of 0.59 seconds in forming the heat-resistant and chemical-resistant layer (Ni—Zn layer).
(實施例3) 於耐熱及耐化學品處理層(Ni-Zn層)之形成條件中,將電鍍條件變更為電流密度1.9 A/dm 2,時間0.59秒,除此以外,在與實施例1同樣之條件下獲得表面處理銅箔。 (Example 3) A surface-treated copper foil was obtained under the same conditions as in Example 1 except that the electroplating conditions were changed to a current density of 1.9 A/dm 2 and a time of 0.59 seconds in forming the heat-resistant and chemical-resistant layer (Ni—Zn layer).
(實施例4) 於耐熱及耐化學品處理層(Ni-Zn層)之形成條件中,將電鍍條件變更為電流密度2.2 A/dm 2,時間0.59秒,除此以外,在與實施例1同樣之條件下獲得表面處理銅箔。 (Example 4) A surface-treated copper foil was obtained under the same conditions as in Example 1 except that the electroplating conditions were changed to a current density of 2.2 A/dm 2 and a time of 0.59 seconds in forming the heat-resistant and chemical-resistant layer (Ni—Zn layer).
(比較例1) (1)粗化處理層 <粗化粒子之形成條件> 鍍覆液組成:11 g/L之Cu、50 g/L之硫酸 鍍覆液溫度:27℃ 鍍覆處理次數:2次 電鍍條件:電流密度41.3 A/dm 2,時間0.68秒 <覆蓋鍍層之形成條件> 鍍覆液組成:20 g/L之Cu、100 g/L之硫酸 鍍覆液溫度:50℃ 鍍覆處理次數:2次 電鍍條件:電流密度8.2 A/dm 2,時間0.77秒 (Comparative Example 1) (1) Roughening layer <Conditions for forming roughening particles> Coating solution composition: 11 g/L Cu, 50 g/L sulfuric acid Coating solution temperature: 27°C Number of coating passes: 2 times Electroplating conditions: Current density 41.3 A/dm 2 , time 0.68 seconds <Conditions for forming a covering layer> Coating solution composition: 20 g/L Cu, 100 g/L sulfuric acid Coating solution temperature: 50°C Number of coating passes: 2 times Electroplating conditions: Current density 8.2 A/dm 2 , time 0.77 seconds
(2)耐熱及耐化學品處理層 <Ni-Zn層之形成條件> 鍍覆液組成:23.5 g/L之Ni、4.5 g/L之Zn 鍍覆液pH:3.6 鍍覆液溫度:40℃ 電鍍條件:電流密度3.42 A/dm 2,時間0.39秒 鍍覆處理次數:1次 (2) Heat-resistant and chemical-resistant layer <Conditions for forming the Ni-Zn layer> Coating solution composition: 23.5 g/L Ni, 4.5 g/L Zn Coating solution pH: 3.6 Coating solution temperature: 40°C Electroplating conditions: Current density 3.42 A/dm 2 , time 0.39 seconds Number of plating treatments: 1
(3)鉻酸鹽處理層 <電解鉻酸鹽處理層之形成條件> 鉻酸鹽液組成:3 g/L之K 2Cr 2O 7、0.33 g/L之Zn 鉻酸鹽液pH:3.65 鉻酸鹽液溫度:55℃ 電解條件:電流密度2.7 A/dm 2,時間0.39秒 鉻酸鹽處理次數:2次 (3) Chromate treatment layer <Conditions for forming the electrolytic chromate treatment layer> Chromate solution composition: 3 g/L K 2 Cr 2 O 7 , 0.33 g/L Zn Chromate solution pH: 3.65 Chromate solution temperature: 55°C Electrolysis conditions: Current density 2.7 A/dm 2 , time 0.39 seconds Chromate treatment times: 2 times
(4)矽烷偶合處理層 藉由塗佈N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷之1.2體積%水溶液,並使之乾燥,而形成矽烷偶合處理層。 (4) Silane coupling treatment layer The silane coupling treatment layer is formed by applying a 1.2 volume % aqueous solution of N-2-(aminoethyl)-3-aminopropyltrimethoxysilane and drying it.
對上述實施例1~4及比較例1中所獲得之表面處理銅箔進行下述評價。 <表面處理層中之各元素之附著量> 關於表面處理層中之Zn附著量及Ni附著量,用按照硝酸:水=1:2之體積比混合而成之硝酸水溶液使所獲得之表面處理銅箔溶解,藉由ICP分析進行測定。測定時使用感應耦合電漿發射光譜分析裝置(日立高新技術科學股份有限公司製造,SPS3520UV)。 表面處理層中之Cr附著量係藉由以下方式進行測定,亦即,用按照鹽酸:水=1:4之體積比混合而成之鹽酸水溶液將所獲得之表面處理銅箔煮沸溶解,利用原子吸光法進行定量分析。測定係使用原子吸光分光光度計(Agilent製造,200 Series AA)。 再者,Zn、Ni及Cr之附著量係以各個表面處理銅箔之每單元面積(dm 2)之Zn、Ni及Cr的附著質量(μg)來表示。 又,基於所獲得之元素之附著量,計算出Ni附著量相對於Ni附著量及Zn附著量之合計之比率(表示為「Ni率」),以及Cr附著量相對於Ni附著量、Zn附著量及Cr附著量之合計之比率(表示為「Cr率」)。 The following evaluations were performed on the surface-treated copper foils obtained in the above-mentioned Examples 1 to 4 and Comparative Example 1. <The amount of each element attached in the surface-treated layer> Regarding the amount of Zn and Ni attached in the surface-treated layer, the surface-treated copper foil obtained was dissolved in an aqueous nitric acid solution prepared by mixing nitric acid: water in a volume ratio of 1:2, and the amount was measured by ICP analysis. An inductively coupled plasma emission spectrometer (SPS3520UV, manufactured by Hitachi High-Tech Sciences, Inc.) was used for the measurement. The amount of Cr attached in the surface-treated layer was measured in the following manner, that is, the surface-treated copper foil obtained was boiled and dissolved in an aqueous hydrochloric acid solution prepared by mixing hydrochloric acid: water in a volume ratio of 1:4, and quantitative analysis was performed using atomic absorption spectrometry. The measurement was performed using an atomic absorption spectrophotometer (Agilent, 200 Series AA). The amounts of Zn, Ni, and Cr deposited were expressed as the mass (μg) of Zn, Ni, and Cr deposited per unit area (dm 2 ) of each surface-treated copper foil. Based on the amounts of the elements deposited, the ratio of the Ni deposited amount to the total of the Ni deposited amount and the Zn deposited amount (expressed as "Ni ratio") and the ratio of the Cr deposited amount to the total of the Ni deposited amount, the Zn deposited amount, and the Cr deposited amount (expressed as "Cr ratio") were calculated.
<底切寬度> 將表面處理銅箔與厚度25 μm之聚醯亞胺膜(鐘化股份有限公司製造之PIXEO(註冊商標))貼合後,於360℃保持30分鐘而加熱壓接。此加熱壓接完全於2.5 kPa實施。繼而,使用蝕刻液,以寬度成為200 μm之方式形成電路圖案。繼而,針對此電路圖案,使用以過氧化氫及硫酸作為主成分之軟蝕刻液(三菱瓦斯化學股份有限公司製造,Clean Etch CPE-750)實施1分鐘之軟蝕刻。然後,使用光學顯微鏡自聚醯亞胺膜之背面側觀察軟蝕刻後之底切。此處,將產生了底切之電路圖案的觀察圖像之例顯示於圖4。由於聚醯亞胺膜薄,具有穿透性,故可隔著聚醯亞胺膜來觀察底切且測定底切寬度W1、W2。底切寬度W1、W2係於任意選擇之3處進行測定,將其等之平均值作為底切寬度之結果。 將上述各特性評價之結果示於表1。 <Undercut width> After the surface-treated copper foil and the 25 μm-thick polyimide film (PIXEO (registered trademark) manufactured by Kaneka Co., Ltd.) were laminated, they were heat-pressed at 360°C for 30 minutes. This heat-pressing was performed entirely at 2.5 kPa. Then, using an etching solution, a circuit pattern was formed in such a way that the width became 200 μm. Next, the circuit pattern was soft-etched for 1 minute using a soft etching solution containing hydrogen peroxide and sulfuric acid as the main components (Clean Etch CPE-750 manufactured by Mitsubishi Gas Chemical Co., Ltd.). Then, the undercut after soft etching was observed from the back side of the polyimide film using an optical microscope. Here, an example of an observed image of a circuit pattern with undercut is shown in FIG4. Since the polyimide film is thin and has transmissive properties, the undercut can be observed through the polyimide film and the undercut widths W1 and W2 can be measured. The undercut widths W1 and W2 are measured at three randomly selected locations, and the average value thereof is taken as the result of the undercut width. The results of the above-mentioned characteristic evaluations are shown in Table 1.
[表1]
如表1所示,實施例1~4之表面處理銅箔之表面處理層含有Ni、Zn及Cr,且於該表面處理層中,Zn附著量為100~500 μg/dm 2,Cr附著量為70~150 μg/dm 2,Cr率為18.0~50.0%,而比較例1之表面處理層之Cr附著量及Cr率處於上述範圍外,實施例1~4之表面處理銅箔相較於比較例1,底切寬度較小。 As shown in Table 1, the surface treated layers of the surface treated copper foils of Examples 1 to 4 contain Ni, Zn and Cr, and in the surface treated layers, the Zn attachment amount is 100 to 500 μg/dm 2 , the Cr attachment amount is 70 to 150 μg/dm 2 , and the Cr ratio is 18.0 to 50.0%. The Cr attachment amount and Cr ratio of the surface treated layer of Comparative Example 1 are outside the above ranges. Compared with Comparative Example 1, the undercut width of the surface treated copper foils of Examples 1 to 4 is smaller.
從以上結果可知,若根據本發明之實施形態,可提供一種於進行軟蝕刻而形成電路圖案時能抑制產生底切之表面處理銅箔及覆銅積層板。又,若根據本發明之實施形態,可提供一種具備底切受到抑制之電路圖案之印刷配線板的製造方法。From the above results, it can be seen that according to the embodiment of the present invention, a surface treated copper foil and copper clad laminate can be provided that can suppress undercut when forming a circuit pattern by soft etching. In addition, according to the embodiment of the present invention, a method for manufacturing a printed wiring board having a circuit pattern with suppressed undercut can be provided.
因此,本發明之實施形態可採用以下態樣。 [1]一種表面處理銅箔,其具有銅箔及形成於該銅箔之至少一面之表面處理層, 該表面處理層含有Ni、Zn及Cr, 於該表面處理層中,Zn附著量為100~500 μg/dm 2,Cr附著量為70~150 μg/dm 2,且該Cr附著量相對於Ni附著量、該Zn附著量及該Cr附著量之合計之比率為18.0~50.0%。 [2]如[1]所記載之表面處理銅箔,其中,該表面處理層進而含有Co, 於該表面處理層中,Co附著量為100 μg/dm 2以下。 [3]如[1]所記載之表面處理銅箔,其中,該表面處理層不含Co。 [4]如[1]至[3]中任一項所記載之表面處理銅箔,其中,該Zn附著量為151~394 μg/dm 2。 [5]如[4]所記載之表面處理銅箔,其中,該Zn附著量為151~331 μg/dm 2。 [6]如[1]至[5]中任一項所記載之表面處理銅箔,其中,該Cr附著量為98~120 μg/dm 2。 [7]如[6]所記載之表面處理銅箔,其中,該Cr附著量為98~107 μg/dm 2。 [8]如[1]至[7]中任一項所記載之表面處理銅箔,其中,該Ni附著量為10~100 μg/dm 2。 [9]如[8]所記載之表面處理銅箔,其中,該Ni附著量為27~72 μg/dm 2。 [10]如[1]至[9]中任一項所記載之表面處理銅箔,其中,該Cr附著量相對於該Ni附著量、該Zn附著量及該Cr附著量之合計之比率為20.0~40.0%。 [11]如[10]所記載之表面處理銅箔,其中,該Cr附著量相對於該Ni附著量、該Zn附著量及該Cr附著量之合計之比率為20.5~35.5%。 [12]如[1]至[11]中任一項所記載之表面處理銅箔,其中,該Ni附著量相對於該Ni附著量及該Zn附著量之合計之比率為10.0~20.0%。 [13]如[12]所記載之表面處理銅箔,其中,該Ni附著量相對於該Ni附著量及該Zn附著量之合計之比率為15.2~18.2%。 [14]如[1]至[13]中任一項所記載之表面處理銅箔,其中,該Ni附著量及該Zn附著量之合計為100 μg/dm 2以上且未達500 μg/dm 2。 [15]如[14]所記載之表面處理銅箔,其中,該Ni附著量及該Zn附著量之合計為178~466 μg/dm 2。 [16]如[1]至[15]中任一項所記載之表面處理銅箔,其中,該表面處理層含有粗化處理層。 [17]一種覆銅積層板,其具備[1]至[16]中任一項所記載之表面處理銅箔,及設置於該表面處理銅箔之該表面處理層上之基材。 [18]一種印刷配線板之製造方法,其係對[17]所記載之覆銅積層板之該表面處理銅箔進行蝕刻而形成電路圖案後,進行軟蝕刻。 Therefore, the embodiments of the present invention may be as follows. [1] A surface-treated copper foil having a copper foil and a surface-treated layer formed on at least one side of the copper foil, wherein the surface-treated layer contains Ni, Zn and Cr, wherein the amount of Zn deposited in the surface-treated layer is 100 to 500 μg/dm 2 , the amount of Cr deposited in the surface-treated layer is 70 to 150 μg/dm 2 , and the ratio of the amount of Cr deposited to the total amount of Ni deposited, the amount of Zn deposited and the amount of Cr deposited is 18.0 to 50.0%. [2] A surface-treated copper foil as described in [1], wherein the surface-treated layer further contains Co, wherein the amount of Co deposited in the surface-treated layer is less than 100 μg/dm 2 . [3] The surface-treated copper foil as described in [1], wherein the surface treatment layer does not contain Co. [4] The surface-treated copper foil as described in any one of [1] to [3], wherein the Zn attachment amount is 151 to 394 μg/dm 2 . [5] The surface-treated copper foil as described in [4], wherein the Zn attachment amount is 151 to 331 μg/dm 2 . [6] The surface-treated copper foil as described in any one of [1] to [5], wherein the Cr attachment amount is 98 to 120 μg/dm 2 . [7] The surface-treated copper foil as described in [6], wherein the Cr attachment amount is 98 to 107 μg/dm 2 . [8] The surface-treated copper foil as described in any one of [1] to [7], wherein the Ni attachment amount is 10 to 100 μg/dm 2 . [9] The surface-treated copper foil as described in [8], wherein the Ni attachment amount is 27 to 72 μg/dm 2 . [10] The surface-treated copper foil as described in any one of [1] to [9], wherein the ratio of the Cr attachment amount to the total of the Ni attachment amount, the Zn attachment amount and the Cr attachment amount is 20.0 to 40.0%. [11] The surface-treated copper foil as described in [10], wherein the ratio of the Cr attachment amount to the total of the Ni attachment amount, the Zn attachment amount and the Cr attachment amount is 20.5 to 35.5%. [12] The surface-treated copper foil as described in any one of [1] to [11], wherein the ratio of the Ni attachment amount to the total of the Ni attachment amount and the Zn attachment amount is 10.0 to 20.0%. [13] The surface-treated copper foil as described in [12], wherein the ratio of the Ni attachment amount to the total of the Ni attachment amount and the Zn attachment amount is 15.2 to 18.2%. [14] The surface-treated copper foil as described in any one of [1] to [13], wherein the total of the Ni attachment amount and the Zn attachment amount is 100 μg/dm 2 or more and less than 500 μg/dm 2 . [15] A surface treated copper foil as described in [14], wherein the total amount of Ni and Zn deposited is 178 to 466 μg/dm 2 . [16] A surface treated copper foil as described in any one of [1] to [15], wherein the surface treatment layer includes a roughening treatment layer. [17] A copper clad laminate comprising a surface treated copper foil as described in any one of [1] to [16], and a substrate disposed on the surface treatment layer of the surface treated copper foil. [18] A method for manufacturing a printed wiring board, comprising etching the surface treated copper foil of the copper clad laminate as described in [17] to form a circuit pattern, and then performing soft etching.
(對SDGs之可貢獻性) 若根據本發明之實施形態,可提供一種能夠於軟蝕刻時抑制產生底切之表面處理銅箔及覆銅積層板,以及具備底切受到抑制之電路圖案之印刷配線板的製造方法,因此有可能可提升製造電子機器等之製品良率。製品良率之提升關乎製品之穩定供給或為有限資源之金屬原材料之損耗縮減。因此,上述實施形態有可能為聯合國主導之永續發展目標(SDGs)之目標9「謀求強韌(resilient)之基礎建設、包容且永續之產業化的促進及革新之推動」或目標12「確保永續之生產消費形態」做出貢獻。 (Contribution to SDGs) According to the implementation form of the present invention, a surface-treated copper foil and a copper-clad laminate that can suppress undercutting during soft etching, as well as a method for manufacturing a printed wiring board having a circuit pattern with suppressed undercutting can be provided, thereby potentially improving the product yield of electronic equipment and the like. Improving the product yield is related to the stable supply of products or the reduction of the loss of metal raw materials, which are limited resources. Therefore, the above implementation form may contribute to Goal 9 of the Sustainable Development Goals (SDGs) led by the United Nations, "Strive for resilient infrastructure, promote inclusive and sustainable industrialization, and promote innovation" or Goal 12, "Ensure sustainable production and consumption patterns."
1:表面處理銅箔 2:銅箔 3,4:表面處理層 10:覆銅積層板 11:基材 20,30:電路圖案 40:底切 1: Surface treated copper foil 2: Copper foil 3,4: Surface treatment layer 10: Copper clad laminate 11: Substrate 20,30: Circuit pattern 40: Undercut
[圖1]係表示具備本發明之實施形態之表面處理銅箔的覆銅積層板之一例的剖面圖。 [圖2]係表示對具備本發明之實施形態之表面處理銅箔的覆銅積層板之表面處理銅箔進行蝕刻而形成電路圖案後,進行軟蝕刻之狀態之一例的剖面圖。 [圖3]係表示對具備以往之表面處理銅箔之覆銅積層板的表面處理銅箔進行蝕刻而形成電路圖案後,經進行軟蝕刻之狀態之一例的剖面圖。 [圖4]係產生底切之電路圖案的觀察圖像之例。 [FIG. 1] is a cross-sectional view showing an example of a copper-clad laminate having a surface-treated copper foil of an embodiment of the present invention. [FIG. 2] is a cross-sectional view showing an example of a state where a circuit pattern is formed by etching the surface-treated copper foil of a copper-clad laminate having an embodiment of the present invention, and then soft etching is performed. [FIG. 3] is a cross-sectional view showing an example of a state where a circuit pattern is formed by etching the surface-treated copper foil of a copper-clad laminate having a conventional surface-treated copper foil, and then soft etching is performed. [FIG. 4] is an example of an observed image of a circuit pattern with undercut.
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| JP2023141527A JP7434656B1 (en) | 2023-08-31 | 2023-08-31 | Method for manufacturing surface-treated copper foil, copper-clad laminate, and printed wiring board |
| JP2023-141527 | 2023-08-31 |
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| US20140057123A1 (en) | 2011-03-30 | 2014-02-27 | Jx Nippon Mining & Metals Corporation | Copper foil for printed circuit |
| JP6462961B2 (en) | 2016-12-14 | 2019-01-30 | 古河電気工業株式会社 | Surface treated copper foil and copper clad laminate |
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| LU101698B1 (en) | 2020-03-18 | 2021-09-20 | Circuit Foil Luxembourg | Surface-treated copper foil for high-frequency circuit and method for producing same |
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