TWI881261B - Substrate processing apparatus, substrate bonding system including the same and substrate processing method using the same - Google Patents

Abstract

A substrate processing apparatus, a substrate bonding system including the same and a substrate processing method using the same are provided. The technique is disclosed as follows: ions and free radicals are supplied to the surface of the substrate to create an environment for forming hydroxyl groups (-OH). Ions are filtered out by an ion blocking device, and simultaneously only free radicals are supplied, so that the hydroxyl groups (-OH) can be uniformly formed on the entire surface of the substrate to ensure the uniformity.

Description

Substrate processing device, substrate bonding system including the same, and substrate processing method

The present invention, as a substrate processing device and a substrate bonding system and a substrate processing method including the same, more specifically relates to the following technology: ions and free radicals are supplied to the surface of a substrate to create an environment for forming hydroxyl groups (-OH), and ions are filtered by an ion blocker while only free radicals are supplied, so that hydroxyl groups (-OH) are uniformly formed on the entire surface of the substrate to ensure uniformity.

Three-dimensional stacking technology is used to achieve high-density integration of semiconductor components. Compared with two-dimensional integration technology, three-dimensional stacking technology can dramatically increase the integration density per unit area or shorten the length of wiring, which can improve the performance of the chip. In addition, new characteristics can be brought into play through the combination of different components.

Three-dimensional stacking technologies generally include C2C (Chip to Chip), C2W (Chip to Wafer), and W2W (Wafer to Wafer).

The W2W stacking method is a method of manufacturing chips by stacking wafers and dicing them. Compared with the C2C method or C2W method, the number of bonding processes is greatly reduced, which has the advantage of being conducive to mass production.

In the past, due to various technical limitations, the C2C stacking method was used to manufacture three-dimensional stacked semiconductors in the semiconductor manufacturing process. However, considering mass production and input-output ratio, the trend has gradually changed to the W2W stacking method.

In particular, when it comes to improving chip performance through three-dimensional stacking, the W2W stacking method is a more effective choice than simply considering increasing integration through stacking, such as in semiconductor memory.

When hybrid bonding is performed by plasma substrate treatment, during the plasma treatment process on the substrate surface, hydroxyl groups (-OH) are repeatedly generated and destroyed on the substrate surface due to the influence of ions (Ions).

Finally, the following phenomenon occurs: hydroxyl groups (-OH) are not uniformly formed on the entire surface of the substrate after the plasma treatment, or the amount of hydroxyl groups (-OH) generated on the substrate surface decreases.

There is a problem that the distribution of hydroxyl groups (-OH) on the entire substrate surface is not uniform, and covalent bonds cannot be formed uniformly when the substrates are subsequently bonded. In addition, there is a problem that the amount of hydroxyl groups (-OH) generated on the substrate surface is not sufficient to form sufficient covalent bonds, so the bonding strength of the substrate bonding becomes weak as a whole.

The present invention is proposed to solve the above-mentioned problems of the prior art, and its purpose is to propose the following scheme: after creating an environment on the substrate surface, ions are filtered and only free radicals are supplied, so that hydroxyl groups (-OH) are uniformly formed on the entire substrate surface and uniformity can be ensured.

In particular, the purpose is to solve the following problem: in the prior art, during the plasma treatment process on the substrate surface, due to the influence of ions (Ion), the generation and destruction of hydroxyl groups (-OH) on the substrate are repeated, and thus the hydroxyl groups (-OH) on the surface of the substrate after the plasma treatment are not uniform.

In addition, the purpose is to solve the following problem: due to the uneven distribution of hydroxyl groups (-OH) on the entire substrate surface, covalent bonds cannot be formed uniformly on the entire substrate when the substrates are subsequently bonded.

Furthermore, the following problem is solved: since the amount of hydroxyl groups (-OH) generated on the substrate surface is insufficient to form sufficient covalent bonds, the bonding strength of the substrate bonding is weakened as a whole.

The purpose of the present invention is not limited to the foregoing, and other purposes and advantages of the present invention not mentioned can be understood through the following description.

An embodiment of the substrate processing method according to the present invention for solving the above-mentioned problem includes: an environment creation step, activating the plasma space and supplying the process gas to create an environment for generating hydroxyl (-OH) on the substrate surface; a selective free radical supply step, activating the upper plasma space and supplying the process gas, filtering ions (Ion) through the ion blocker and diffusing free radicals (Radical); and a hydroxyl uniformity adjustment step, uniformly generating hydroxyl (-OH) in the entire area of the substrate surface to adjust the hydroxyl uniformity.

Preferably, the environment creating step may activate the lower plasma space without activating the upper plasma space.

As an example, the environment creation step may include: a lower plasma space activation step, activating the lower plasma space through the lower plasma activation part while supplying process gas through the gas supply component; a free radical and ion generation step, generating free radicals and ions in the lower plasma space; and a substrate surface roughness adjustment step, generating hydroxyl groups (-OH) in a part of the substrate surface area while adjusting the substrate surface roughness through ions.

Furthermore, it may be that the lower plasma space activation step does not activate the upper plasma space through the upper plasma activation part.

Here, the substrate surface roughness adjustment step may be to adjust the substrate surface roughness by ions to create an environment for forming hydroxyl groups (-OH) on the substrate surface.

Furthermore, the environment creation step may further include: a diffusion support step of supplying a carrier gas to support the generated free radicals and ions to diffuse toward the substrate surface.

As an example, the selective free radical providing step may include: an upper plasma space activation step, activating the upper plasma space through the upper plasma activation part while supplying the process gas through the gas supply component; a free radical and ion generation step, generating free radicals and ions in the upper plasma space; and a free radical diffusion step, filtering ions through an ion blocker and diffusing free radicals.

Preferably, the free radical diffusion step includes: a free radical and ion inflow step, so that the free radicals and ions in the upper plasma space flow into the diffusion space of the ion blocker; and an ion filtering step, filtering ions through the ion blocker and allowing the free radicals to diffuse toward the substrate surface.

Here, in the ion filtering step, the ion blocker may filter the ions using the moving direction characteristics due to the polarity of the ions.

Furthermore, the selective free radical providing step may further include: a step of activating the lower plasma space through the lower plasma activating portion together with the activation of the upper plasma space.

Furthermore, the selective free radical providing step may further include: a diffusion support step, in which the support free radicals generated by supplying a carrier gas diffuse toward the substrate surface.

As an example, in the hydroxyl uniformity adjusting step, hydroxyl groups (-OH) may be generated in the remaining region except for a portion of the substrate surface where hydroxyl groups (-OH) are generated in the environment creating step, so that hydroxyl groups (-OH) are uniformly generated over the entire region of the substrate surface.

In addition, an embodiment of the substrate processing device according to the present invention includes: a process chamber, which provides a processing space for plasma processing for generating hydroxyl groups (-OH) on the surface of the substrate; a plasma activation component, which selectively activates the upper plasma space and the lower plasma space in the processing space; a substrate support component, which is arranged in the processing space to support the substrate; and a gas supply component, which supplies gas including the processing gas to the processing space. The invention relates to a process chamber comprising: an ion blocker, which is arranged above the processing space of the process chamber to divide the upper plasma space, filter ions and diffuse free radicals; and a control component, which controls the upper plasma space and the lower plasma space to selectively activate the plasma activation component to create an environment for generating hydroxyl (-OH) on the surface of the substrate, and controls the uniformity of generating hydroxyl (-OH) on the surface of the substrate.

As an example, the ion blocker may include: an upper plate having a gas inlet hole for gas flowing into an upper plasma space; a diffusion space formed below the upper plate; and a lower plate having a gas discharge hole for diffusing the gas in the diffusion space toward the processing space, wherein the gas inlet hole of the upper plate and the gas discharge hole of the lower plate are configured as virtual extension holes staggered with each other.

Here, the ion blocker may filter ions in the diffusion space using the lower plate by utilizing the moving direction characteristics caused by the polarity of the ions.

Furthermore, the gas supply component may supply the carrier gas to the processing space.

Furthermore, the plasma activation component may include: an upper plasma activation portion for activating the upper plasma space; and a lower plasma activation portion for activating the lower plasma space.

As an example, the control component may activate the lower plasma space and supply process gas to generate hydroxyl groups (-OH) in a part of the substrate surface while adjusting the roughness of the substrate surface through ions, and then activate the upper plasma space and filter the ions through an ion blocker while allowing free radicals to diffuse toward the substrate surface to control the generation of hydroxyl groups (-OH) in the entire area of the substrate surface.

In addition, an embodiment of the substrate bonding system according to the present invention may include: the above-mentioned substrate processing device, which generates hydroxyl groups (-OH) on the surface of the substrate through plasma treatment; a cleaning device, which cleans the surface of the substrate after the plasma treatment; a substrate bonding device, which bonds the substrates with hydroxyl groups (-OH) formed on the surface; and an alignment device, which transfers the substrate to the substrate processing device, the cleaning device and the substrate bonding device.

Furthermore, it can be that a preferred embodiment of the substrate processing method according to the present invention includes: a lower plasma space activation step, in which the upper plasma activation part does not activate the upper plasma space but activates the lower plasma space through the lower plasma activation part, and at the same time, the process gas is supplied through the gas supply component; a lower space free radical and ion generation step, in which free radicals and ions are generated in the lower plasma space; a substrate surface roughness adjustment step, in which hydroxyl groups (-OH) are generated in a part of the substrate surface area, and at the same time, the roughness of the substrate surface is adjusted by ions to create an environment for generating hydroxyl groups (-OH); the upper plasma space activation step; An activation step is performed to activate the upper plasma space through the upper plasma activation part and supply process gas through the gas supply component; an upper space free radical and ion generation step is performed to generate free radicals and ions in the upper plasma space; a diffusion step is performed to diffuse the generated free radicals and ions into the diffusion space of the ion blocker; an ion filtering step is performed to filter the ions through the ion blocker and diffuse the free radicals toward the substrate surface; and a hydroxyl uniformity adjustment step is performed to generate hydroxyl (-OH) in the remaining area of the substrate surface and to uniformly generate hydroxyl (-OH) in the entire area of the substrate surface to adjust the uniformity.

According to the present invention as described above, a sufficient amount of hydroxyl groups (-OH) can be uniformly formed on the entire surface of the substrate.

In particular, the present invention solves the following problem: during a plasma treatment process on a substrate surface, hydroxyl groups (-OH) are repeatedly generated and destroyed on the substrate due to the influence of ions (Ion), so that hydroxyl groups (-OH) are not evenly distributed on the surface of the substrate after the plasma treatment and a sufficient amount of hydroxyl groups (-OH) cannot be generated, thereby enabling overall uniform covalent bonds to be formed when the substrates are bonded.

Furthermore, the roughness of the substrate surface is adjusted through the pre-treatment process to create an environment for the stable generation of hydroxyl groups (-OH). Then, the ions are filtered through an ion blocker and only free radicals (Radical) are diffused toward the substrate surface, thereby adjusting the uniformity of hydroxyl groups so that hydroxyl groups (-OH) are evenly distributed in the empty areas on the substrate surface where hydroxyl groups (-OH) are not formed.

The effects of the present invention are not limited to the effects mentioned above, and a person having ordinary knowledge in the technical field to which the present invention belongs can clearly understand other effects not mentioned from the following description.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or restricted by the embodiments.

In order to illustrate the present invention and the advantages of the present invention in operation and the objectives achieved by the implementation of the present invention, preferred embodiments of the present invention are illustrated below and described with reference to them.

First, the terms used in this application are only used to illustrate specific embodiments and are not intended to limit the present invention. As long as the context does not clearly indicate different meanings, singular expressions may include plural expressions. In addition, in this application, the terms "including" or "having" are used to refer to the existence of features, numbers, steps, actions, constituent elements, parts or combinations thereof recorded in the specification, which should be understood as not excluding the existence or additional possibility of one or more other features or numbers, steps, actions, constituent elements, parts or combinations thereof in advance.

In the description of the present invention, when it is determined that a specific description of a related well-known configuration or function may obscure the gist of the present invention, the detailed description will be omitted.

The present invention proposes the following substrate processing technology: in a substrate bonding process performed by hybrid bonding, when a hydroxyl group (-OH) is formed on a substrate surface by plasma treatment, the hydroxyl group (-OH) is uniformly formed on the entire substrate surface to ensure the uniformity of the hydroxyl group.

FIG. 1 shows the concept of hybrid bonding to which the present invention is applicable.

When plasma treatment is performed, the surface energy of the bonding surface of the silicon substrate can be increased to induce covalent bonds between interfaces. If the hydrophobic properties of the silicon substrate surface are converted to hydrophilic properties through plasma treatment, hydroxyl groups (-OH) can be induced to form on the substrate surface.

After plasma treatment, the substrate surface can be rinsed to activate the generation of hydroxyl groups (-OH) and clean impurities.

The surfaces of the two substrates that have undergone such a process are made to face each other and bonded, and the two substrate surfaces can be bonded through the dehydration reaction brought about by the covalent bond of oxygen (O). The bonding through such a covalent bond has a weak bonding strength, so the metal bond formed by the thermal expansion of the metal wiring, such as eutectic/TLP/diffusion/fusion bonding, induced by a high-temperature heating process, has a stronger bonding strength.

When hydroxyl groups (-OH) are generated on the substrate surface by such plasma treatment, uniform distribution of hydroxyl groups (-OH) on the entire substrate surface and sufficient generation of hydroxyl groups (-OH) become very important factors in ensuring bonding strength through covalent bonds.

Therefore, the present invention proposes a solution that can generate hydroxyl groups (-OH) uniformly on the entire substrate surface and generate hydroxyl groups (-OH) sufficiently on the substrate surface.

The present invention is described in more detail below through embodiments of the present invention.

FIG. 2 shows an embodiment of a substrate bonding system according to the present invention.

The substrate bonding system 1 may include a substrate processing device 10, a cleaning device 50, an alignment device 60, and a substrate bonding device 70 arranged in the clean room 20. In addition, the substrate bonding system 1 may further include a wafer cassette stage 30 arranged at one side of the clean room 20.

In an exemplary embodiment, the clean room 20 can be formed into a rectangular parallelepiped room with an internal space, and form a space to cut off dust and impurities and maintain a cleanliness within a preset range.

The wafer cassette stage 30 can provide a space for storing wafers. A carrier (FOUP) C capable of storing multiple wafers can be supported on a support plate 32 of the wafer cassette stage 30. The wafers stored in the carrier C can be transferred to the inside of the clean room 20 by the transfer robot 22.

The alignment device 60 can sense the positioning edge (or positioning groove) of the wafer W to align the wafer W. The wafer aligned by the alignment device 60 can be transferred to the substrate processing device 10, the cleaning device 50, and the substrate bonding device 70 by the transfer robot 22.

The cleaning device 50 can clean the surface of the wafer substrate that has been plasma treated by the substrate processing device 10. The cleaning device 50 can use a spin coater to apply deionized (DI) water on the surface of the wafer substrate. DI water not only cleans the surface of the wafer substrate but also allows the hydroxyl group (-OH) to be well bonded to the surface of the wafer substrate, thereby making it easier to form a hybrid bonding.

The substrate bonding device 70 may include a lower chuck structure and an upper chuck structure. The upper chuck structure may fix the first wafer, and the lower chuck structure may fix the second wafer.

Either or both of the upper chuck structure and the lower chuck structure can be raised and lowered to pressurize and simultaneously join the first wafer and the second wafer. For example, a push rod may be arranged in the upper chuck structure and the lower chuck structure, and a joint may be formed between the first wafer and the second wafer from the center of the wafer substrate to the periphery by raising and lowering the push rod. Alternatively, a pressurizing member that expands by air or gas injection may be arranged in the upper chuck structure and the lower chuck structure, and a joint may be formed between the first wafer and the second wafer from the center of the wafer substrate to the periphery by the expansion of the pressurizing member.

Furthermore, the substrate bonding system 1 may also include an annealing device (not shown) for thermally treating the bonded wafer substrates. In addition, the substrate bonding system 1 may also include a grinding device (not shown) for grinding the surface of any one of the bonded wafer substrates.

Observe the substrate processing device 10 according to an embodiment of the substrate processing device of the present invention with reference to FIG. 3.

The substrate processing device 10 may include a process chamber 100, a substrate support 110, an ion blocker 200, a gas supply component 300, a plasma activation component, etc.

The substrate support part 110 may support the wafer W in the process chamber 100. The substrate support part 110 may include a substrate stage for placing the wafer.

In an exemplary embodiment, the substrate processing device 10 may be a device for irradiating plasma to the surface of a substrate such as a semiconductor wafer W disposed in an inductively coupled plasma (ICP) process chamber 100 to form a hydroxyl group (-OH) on the surface of the substrate. Here, the plasma generated by the substrate processing device 10 is not limited to inductively coupled plasma, and may be, for example, capacitively coupled plasma or microwave plasma.

The process chamber 100 may provide a closed processing space 120 for performing a plasma treatment process on a wafer W. The process chamber 100 may be a cylindrical vacuum chamber. The process chamber 100 may include a metal such as aluminum or stainless steel. The process chamber 100 may include a cover 102 covering the upper portion of the process chamber 100. The cover 102 may seal the upper portion of the process chamber 100.

A gate (not shown) for the entry and exit of the wafer W may be provided on the side wall of the process chamber 100. The wafer W may be loaded and unloaded on the substrate table of the substrate support part 110 through the gate.

It can be that an exhaust port 104 is provided at the lower part of the process chamber 100, and the exhaust port 104 is connected to the exhaust part 106 through an exhaust pipe. The exhaust part 106 can include a vacuum pump such as a turbomolecular pump to adjust the processing space inside the process chamber 100 to a desired vacuum pressure. In addition, the process byproducts and residual process gases generated in the process chamber 100 can be discharged through the exhaust port 104.

The plasma activation member may include an upper plasma activation portion 130 for activating the upper plasma space 150 and a lower plasma activation portion 140 for activating the lower plasma space 160.

The upper plasma activation part 130 may include an upper electrode 131, a source RF power supply 133, a source RF matcher 135, etc.

The upper electrode 131 may be disposed above the outer side of the process chamber 100 in a manner opposite to the lower electrode. As an example, the upper electrode 131 may be disposed on the cover 102. Alternatively, the upper electrode 131 may also be formed on the upper portion of the process chamber 100.

The upper electrode 131 may include a radio frequency (RF) antenna. The antenna may have a planar coil shape. The cover 102 may include a disc-shaped dielectric window. The dielectric window may include a dielectric. For example, the dielectric window may include aluminum oxide (Al ₂ O ₃ ). The dielectric window may have a function of transmitting power from the antenna to the inside of the process chamber 100 .

For example, the upper electrode 131 may include a spiral or concentric coil. The coil may generate inductively coupled plasma in the plasma space of the process chamber 100. Here, the number and configuration of the coil may be appropriately changed as needed.

The upper plasma activation part 130 may apply plasma source power to the upper electrode 131. For example, the upper plasma activation part 130 may include a source RF power supply 133 and a source RF matcher 135 as plasma source elements. The source RF power supply 133 may generate a radio frequency (RF) signal. The source RF matcher 135 may control the plasma to be generated by the antenna coil of the upper electrode 131 by matching the impedance of the RF signal generated from the source RF power supply 133.

The lower plasma activation section 140 may include a lower electrode 141, a bias RF power supply 143, a bias RF matcher 145, etc.

The lower electrode 141 can be disposed inside the substrate support portion 110.

The lower plasma activation section 140 may apply bias source power to the lower electrode 141. For example, the lower plasma activation section 140 may include a bias RF power supply 143 and a bias RF matcher 145 as bias elements. The lower electrode 141 may pull plasma atoms or ions generated in the process chamber 100. The bias RF power supply 143 may generate a radio frequency (RF) signal. The bias RF matcher 145 may adjust the bias voltage and bias current of the lower electrode 141 to match the impedance of the bias RF. The bias RF power supply 143 and the source RF power supply 133 may be synchronized or asynchronous with each other through a tuner of a control member (not shown).

The aforementioned control component can control the aforementioned plasma activation component to selectively activate the upper plasma space 150 and the lower plasma space 160.

The aforementioned control component can be connected to the upper plasma activation part 130 and the lower plasma activation part 140 to control their operation. The aforementioned control component can include a microcomputer and various interfaces, and control the operation of the plasma processing device 10 according to the program and method information stored in the external memory or the internal memory.

In particular, the control component can activate the lower plasma space and supply process gas to generate hydroxyl groups (-OH) in a part of the substrate surface while adjusting the roughness of the substrate surface through ions, and then activate the upper plasma space and filter ions through the ion blocker while allowing free radicals to diffuse toward the substrate surface to control the generation of hydroxyl groups (-OH) in the entire area of the substrate surface.

The operation of such a control component will be observed later through a specific implementation example.

The ion blocker 200 can be disposed in the upper space inside the process chamber 100 to divide the upper plasma space 150. As an example, the upper plasma space 150 can be formed above the ion blocker 200, and the lower plasma space 160 can be formed above the substrate.

FIG. 4 and FIG. 5 show an embodiment of an ion blocker of a substrate processing device according to the present invention. The ion blocker 200 is described with reference to the aforementioned FIG. 4 and FIG. 5.

The ion blocker 200 may include an upper plate 210 and a lower plate 250, and include a diffusion space 230 disposed between the upper plate 210 and the lower plate 250.

It can be that a plurality of gas inflow holes 211 are arranged in the upper plate 210 as through holes for the gas in the upper plasma space to flow into the diffusion space 230, and a plurality of gas discharge holes 251 are arranged in the lower plate 250 as through holes for the gas in the diffusion space 230 to diffuse into the lower plasma space.

The multiple gas inflow holes 211 arranged in the upper plate 210 and the multiple gas exhaust holes 251 arranged in the lower plate 250 can be configured so that the virtual extension lines are staggered with each other. That is, the virtual extended holes of the gas inflow holes 211 of the upper plate 210 meet the upper surface of the lower plate 250 and are blocked, and the virtual extended holes of the gas exhaust holes 251 of the lower plate 250 meet the lower surface of the upper plate 210 and are blocked.

The structure of the ion blocker 200 can filter ions and diffuse free radicals to the substrate surface. The operation of the ion blocker 200 will be described in more detail later through an embodiment.

The gas inflow holes 211 of the upper plate 210 and the gas exhaust holes 251 of the lower plate 250 can be varied in number, configuration, etc. as needed.

The substrate processing device 10 may include a gas supply component 300 for supplying plasma gas to the interior of the process chamber 100.

The gas supply component 300 can supply process gas, and in addition to the process gas, can supply carrier gas. As the process gas, _N2 , _O2 and other gases can be selected according to the characteristics of the target substrate for plasma treatment. The carrier gas can include inert gas such as Ar as a gas that does not react with the process gas and the substrate.

The gas supply component 300 may include a flow rate controller (FRC) to adjust the supply amount of the process gas and the carrier gas. As an example, the flow rate controller (FRC) may include a mass flow controller (MFC).

In addition, the present invention proposes a substrate processing method for ensuring uniformity by uniformly generating hydroxyl groups (-OH) over the entire area of the substrate surface using the substrate processing apparatus according to the present invention as previously observed.

FIG6 shows a flow chart of an embodiment of a substrate processing method according to the present invention.

The plasma space can be activated and process gas can be supplied to create an environment for generating hydroxyl groups (-OH) on the substrate surface. Preferably, the upper plasma space can be kept in an inactive state while only the lower plasma space is activated to supply process gas (Process Gas) (S100).

Through the process gas supply, free radicals (Radical) and ions (Ion) can be generated in the lower plasma space. The free radicals generate hydroxyl groups (-OH) in a part of the substrate surface, and the ions are used to adjust the roughness of the substrate surface, thereby creating an environment for the formation of hydroxyl groups (S200).

Then, the upper plasma space can be activated while supplying process gas (S300) and the ions can be filtered through the ion blocker while only free radicals are provided to the substrate surface (S400).

Through the ion blocker, only free radicals reach the substrate surface but ions do not, so that hydroxyl groups (-OH) can be generated in the remaining areas on the substrate surface where hydroxyl groups are not formed.

In this way, hydroxyl groups (-OH) can be uniformly formed over the entire area of the substrate surface, thereby ensuring a sufficient amount of hydroxyl groups (-OH) and adjusting the uniformity of the overall hydroxyl groups (-OH) on the substrate surface (S500).

The substrate processing method according to the present invention is observed in more detail through more specific embodiments.

First, regarding the process of creating an environment for forming hydroxyl groups on the substrate surface, FIG. 7 shows a flow chart of an embodiment of the process of creating an environment for forming hydroxyl groups according to the substrate processing method of the present invention, and FIG. 8 and FIG. 9 show an example of the process of creating an environment for forming hydroxyl groups according to the substrate processing method.

The control component can control the lower plasma activation part 140 to supply power, and supply process gas (Process Gas) PG through the gas supply component 300 (S110). The lower plasma space 160 can be activated through the lower plasma activation part 140 (S120). Then, free radicals and ions can be generated in the lower plasma space 160 through the supplied process gas PG.

Referring to FIG. 8 , the control component can control the upper plasma activation part 130 to cut off the power supply while the upper plasma space 150 remains in an inactive state, while the lower plasma activation part 140 supplies power to activate the lower plasma space 160.

The process gas PG supplied by the gas supply component 300 diffuses toward the substrate surface and reaches the lower plasma space 160, and free radicals R and ions I can be generated in the lower plasma space 160 (S130).

Furthermore, the control component can also supply carrier gas in addition to the process gas through the gas supply component 300, so that the process gas PG can be supplied more smoothly toward the substrate surface. Moreover, the diffusion rate of the process gas can also be controlled by the carrier gas.

The generated free radicals R and ions I can be used to form a substrate W surface treatment (S210). For example, as shown in FIG9 , hydroxyl groups (-OH) can be generated on the substrate W surface by the generated free radicals R. Since ions I also reach the substrate W surface, part of the hydroxyl groups (-OH) generated by ions I can be destroyed. Therefore, the hydroxyl groups (-OH) can be maintained only in a local area A1 on the substrate W surface.

In addition, the ions I reach a portion of the area A2 on the surface of the substrate W, thereby adjusting the roughness of the surface of the substrate W. Here, the portion of the area A2 on the surface of the substrate W where the roughness is adjusted can provide an environment in which a hydroxyl group (-OH) can be formed more stably later.

In this way, the lower plasma space 160 is activated and the process gas PG is supplied, thereby forming a hydroxyl group (-OH) in a part of the surface of the substrate W and adjusting the roughness of the surface of the substrate W (S220), thereby creating an environment for smoother and more stable formation of hydroxyl groups (-OH).

Next, regarding the process of uniformly forming hydroxyl groups on the entire area of the substrate surface, FIG. 10 shows a flow chart of an embodiment of the process of uniformly forming hydroxyl groups on the entire substrate surface according to the substrate processing method of the present invention, and FIG. 11 to FIG. 15 show an example of the process of uniformly forming hydroxyl groups on the entire substrate surface according to the substrate processing method of the present invention.

The control component can control the upper plasma activation part 130 to supply power, and supply process gas (Process Gas) through the gas supply component 300 (S310). The upper plasma space 150 can be activated through the upper plasma activation part 130 (S320). Then, free radicals and ions can be generated in the upper plasma space 150 through the supplied process gas.

Referring to FIG. 11 , the control component can supply power and activate the upper plasma space 150 by controlling the upper plasma activation part 130. In addition, the control component can control the gas supply component 300 to supply process gas and generate free radicals R and ions I in the upper plasma space (S330).

The free radicals R and ions I generated in the upper plasma space 150 may flow into the ion blocker 200 and filter the ions I through the ion blocker 200 (S410) and allow only the free radicals R to diffuse toward the surface of the substrate W (S420).

Referring to FIG. 12 and FIG. 13 , the free radicals R and ions I generated in the upper plasma space 150 can flow into the diffusion space 230 through the gas inflow hole 211 disposed in the upper plate 210 of the ion blocker 200. At this time, the ions I move in a straight line due to the moving direction characteristics brought by the polarity, so the ions I in the upper plasma space 150 whose moving direction is different from that of the gas inflow hole 211 can be filtered once through the upper plate 210.

Ions I in the upper plasma space 150 whose moving direction is the same as the gas inflow hole 211 of the ion blocker 200 can flow into the diffusion space 230 together with the free radicals R.

The free radicals R existing in the diffusion space 230 of the ion blocker 200 can diffuse toward the surface of the substrate W through the gas discharge holes 251 arranged in the lower plate 250. At this time, the ions I flowing into the diffusion space 230 of the ion blocker 200 are staggered with the gas discharge holes 251 arranged in the lower plate 250 because the moving direction is the same as the gas inflow holes 211 of the upper plate 210. Therefore, the ions I flowing into the diffusion space 230 can be filtered twice through the gas discharge holes 251 arranged in the lower plate 250.

Furthermore, the control component also supplies carrier gas in addition to the process gas through the gas supply component 300, so that the free radicals R are supplied more smoothly toward the substrate surface, and the movement speed of the ions I is adjusted to be faster, so as to prevent the movement direction of the ions I from changing due to various factors.

Furthermore, the control component can also activate the lower plasma space 160 through the lower plasma activation part 140.

The free radicals R diffuse toward the surface of the substrate W, so that the free radicals R can reach the substrate W and form hydroxyl radicals (S510).

Referring to Figures 14 and 15, ions I can be filtered by the ion blocker 200 and only free radicals R can be diffused toward the surface of the substrate W to generate hydroxyl groups (-OH) on the surface of the substrate W. At this time, since hydroxyl groups (-OH) are formed in advance in a part of the area A1 on the surface of the substrate W, hydroxyl groups (-OH) can be generated in the remaining part of the area A2. Moreover, by creating an environment under the roughness adjustment of the surface of the substrate W, hydroxyl groups (-OH) can be stably and effectively generated in the remaining part of the area A2.

Through such a process, sufficient amount of hydroxyl groups (-OH) are formed while being evenly distributed over the entire surface of the substrate W, thereby being able to adjust the hydroxyl uniformity (S520).

Through the above observations, the present invention can uniformly form a sufficient amount of hydroxyl groups (-OH) on the entire surface of the substrate.

In particular, the following problem is solved: during the plasma treatment process on the substrate surface, the generation and destruction of hydroxyl groups (-OH) on the substrate are repeated due to the influence of ions (Ion), so that the hydroxyl groups (-OH) cannot be evenly distributed on the surface of the substrate after the plasma treatment and a sufficient amount of hydroxyl groups (-OH) cannot be generated, so that covalent bonds can be formed uniformly on the whole when the substrates are bonded.

Furthermore, the roughness of the substrate surface is adjusted through the pre-treatment process to create an environment for the stable generation of hydroxyl groups (-OH). Then, the ions are filtered through the ion blocker and only the free radicals (Radical) are diffused toward the substrate surface, so that the uniformity of the hydroxyl groups can be adjusted so that the hydroxyl groups (-OH) are evenly distributed in the empty areas on the substrate surface where no hydroxyl groups (-OH) are formed.

The above description is only an illustrative description of the technical concept of the present invention. Personnel with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and changes within the scope of the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are used to illustrate the technical concept of the present invention and are not limited to it. The technical concept of the present invention is not limited by such embodiments. The scope of protection of the present invention should be interpreted according to the scope of the attached patent application, and should be interpreted as all technical concepts within the equivalent scope are included in the scope of rights of the present invention.

1: Substrate bonding system

10: Substrate processing device

20: Clean room

22:Robot

30: Wafer cassette table

32: Support plate

50: Cleaning device

60: Alignment device

70: Substrate bonding device

100: Processing chamber

102: Cover

104: Exhaust port

106: Exhaust section

110: Substrate support part

120: Processing space

130: Upper plasma activation unit

131: Upper electrode

133: Source RF power

135: Source RF Matcher

140: Lower plasma activation unit

141: Lower electrode

143: Bias RF power supply

145: Bias RF matcher

150: Upper plasma space

160: Lower plasma space

200:Ion blocker

210: Go up board

211: Gas inflow hole

230: Diffusion space

250: Lower board

251: Gas discharge hole

300: Gas supply components

A1: Some areas

A2: Some areas

C: Vehicles

I: ions

PG: Process gas

R: Free radicals

S100, S110, S120, S130: Steps

S200, S210, S220: Steps

S300, S310, S320, S330: Steps

S400, S410, S420: Steps

S500, S510, S520: Steps

W: Wafer

FIG. 1 shows the concept of hybrid bonding to which the present invention is applicable.

FIG. 2 shows an embodiment of a substrate bonding system according to the present invention.

FIG. 3 shows an embodiment of a substrate processing apparatus according to the present invention.

FIG. 4 and FIG. 5 show an embodiment of an ion blocker of a substrate processing apparatus according to the present invention.

FIG6 is a flow chart showing an embodiment of a substrate processing method according to the present invention.

FIG. 7 is a flow chart showing an embodiment of a process for creating an environment for forming a hydroxyl radical according to a substrate processing method of the present invention.

FIG. 8 and FIG. 9 show an example of an environment creation process for forming a hydroxyl group in a substrate processing method.

FIG. 10 is a flow chart showing an embodiment of a process for uniformly forming hydroxyl groups on the entire surface of a substrate according to a substrate processing method of the present invention.

11 to 15 show an example of a process of uniformly forming hydroxyl groups on the entire surface of a substrate according to the substrate processing method of the present invention.

S110: Step

S120: Step

S130: Step

S210: Step

S220: Step

Claims (20)

A substrate processing method includes: an environment creation step, in which a plasma space is activated in a part of the substrate surface while the roughness of the substrate surface is controlled and a process gas is supplied to generate hydroxyl groups; a selective free radical supply step, in which an upper plasma space is activated and the process gas is supplied, ions are filtered through an ion blocker and free radicals are diffused; and a hydroxyl uniformity adjustment step, in which the hydroxyl groups are generated on the substrate surface except for the part of the substrate surface where the hydroxyl groups are generated and the hydroxyl uniformity is adjusted. A substrate processing method as described in claim 1, wherein, the environment creation step activates the lower plasma space but does not activate the upper plasma space. The substrate processing method as described in claim 1, wherein, the environment creation step includes: a lower plasma space activation step, activating the lower plasma space by the lower plasma activation part and supplying the process gas by the gas supply component; a free radical and ion generation step, generating the free radical and the ion in the lower plasma space; and a substrate surface roughness adjustment step, generating the hydroxyl radical in a part of the substrate surface and adjusting the roughness of the substrate surface by the ion. The substrate processing method as described in claim 3, wherein, the lower plasma space activation step does not activate the upper plasma space through the upper plasma activation part. The substrate processing method as described in claim 3, wherein, the substrate surface roughness adjustment step adjusts the roughness of the substrate surface by using the ions to create an environment for the formation of the hydroxyl group on the substrate surface. The substrate processing method as described in claim 3, wherein, the environment creation step further includes: a diffusion support step, supplying a carrier gas to support the generated free radicals and ions to diffuse toward the surface of the substrate. The substrate processing method as described in claim 1, wherein, the selective free radical providing step comprises: an upper plasma space activation step, activating the upper plasma space by the upper plasma activation part and supplying the process gas by the gas supply component; a free radical and ion generation step, generating the free radical and the ion in the upper plasma space; and a free radical diffusion step, filtering the ion by the ion blocker and diffusing the free radical. The substrate processing method as described in claim 7, wherein, the free radical diffusion step includes: a free radical and ion inflow step, so that the free radical and the ion in the upper plasma space flow into the diffusion space of the ion blocker; and an ion filtering step, filtering the ions through the ion blocker and allowing the free radical to diffuse toward the substrate surface. The substrate processing method as described in claim 8, wherein, in the ion filtering step, the ion blocker filters the ions using the moving direction characteristics brought about by the polarity of the ions. The substrate processing method as described in claim 7, wherein, the selective free radical providing step further includes: a step of activating the lower plasma space through the lower plasma activation part together with the activation of the upper plasma space. The substrate processing method as described in claim 7, wherein, the selective free radical providing step further includes: a diffusion supporting step, supplying a carrier gas to support the generated free radicals to diffuse toward the surface of the substrate. The substrate processing method as described in claim 1, wherein, in the hydroxyl uniformity adjustment step, the hydroxyl group is generated in the remaining area except for a part of the substrate surface where the hydroxyl group is generated by the environment creation step, and the hydroxyl group is uniformly generated in the entire area of the substrate surface. A substrate processing device comprises: A process chamber, providing a processing space for plasma processing for generating hydroxyl radicals on the surface of a substrate; A plasma activation component, selectively activating an upper plasma space and a lower plasma space in the processing space, wherein the plasma activation component comprises an upper electrode and a lower electrode; A substrate support component, disposed in the processing space to support the substrate; A gas supply component, supplying one or more gases including process gas to the processing space; An ion blocker, disposed above the processing space of the process chamber to divide the upper plasma space, and located between the upper electrode and the lower electrode, and filtering ions and diffusing free radicals; and A control component controls the creation of an environment for generating hydroxyl groups on the substrate surface by selectively activating the upper plasma space and the lower plasma space through the plasma activation component, and controls the uniformity of generating the hydroxyl groups on the substrate surface. The substrate processing device as described in claim 13, wherein, the ion blocker comprises: an upper plate provided with a gas inflow hole for the gas flowing into the upper plasma space; a diffusion space formed below the upper plate; and a lower plate provided with a gas discharge hole for diffusing the gas in the diffusion space into the processing space, wherein the gas inflow hole of the upper plate and the gas discharge hole of the lower plate are configured as virtual extension holes staggered with each other. The substrate processing device as described in claim 14, wherein, the ion blocker utilizes the lower plate to filter the ions in the diffusion space by using the moving direction characteristics brought about by the polarity of the ions. A substrate processing device as described in claim 13, wherein the gas supply component supplies carrier gas to the processing space. The substrate processing device as described in claim 13, wherein, the plasma activation component includes: an upper plasma activation portion, which activates the upper plasma space, and the upper plasma activation portion includes the upper electrode; and a lower plasma activation portion, which activates the lower plasma space, and the lower plasma activation portion includes the lower electrode. The substrate processing device as described in claim 13, wherein, the control component activates the lower plasma space and supplies the process gas to generate the hydroxyl radical in a part of the substrate surface while adjusting the roughness of the substrate surface through the ions, and then activates the upper plasma space and filters the ions through the ion blocker while allowing the free radical to diffuse toward the substrate surface to control the generation of the hydroxyl radical in the entire area of the substrate surface. A substrate bonding system, comprising: The substrate processing device described in claim 13, which generates the hydroxyl group on the surface of the substrate by plasma treatment; A cleaning device, which cleans the surface of the substrate after the plasma treatment; A substrate bonding device, which bonds the substrate with the hydroxyl group formed on the surface; and An alignment device, which transfers the substrate to the substrate processing device, the cleaning device, and the substrate bonding device. A substrate processing method includes: A lower plasma space activation step, in which the upper plasma activation part does not activate the upper plasma space but activates the lower plasma space through the lower plasma activation part, and at the same time, a process gas is supplied through a gas supply component; A lower space free radical and ion generation step, in which free radicals and ions are generated in the lower plasma space; A substrate surface roughness adjustment step, in which hydroxyl groups are generated in a part of the substrate surface area and the roughness of the substrate surface is adjusted by the ions to generate the hydroxyl groups; An upper plasma space activation step, in which the upper plasma activation part activates the upper plasma space and at the same time, the gas supply component supplies the process gas; The step of generating free radicals and ions in the upper plasma space is to generate the free radicals and ions in the upper plasma space; The step of diffusion is to diffuse the generated free radicals and ions into the diffusion space of the ion blocker; The step of ion filtering is to filter the ions through the ion blocker and diffuse the free radicals toward the substrate surface; and The step of adjusting the uniformity of hydroxyl groups is to generate the hydroxyl groups on the substrate surface except for the partial area of the substrate surface where the hydroxyl groups are generated and adjust the uniformity of the hydroxyl groups.